Display device and light-emitting device
Patent Information
- Authority / Receiving Office
- TW · TW
- Patent Type
- Patents
- Current Assignee / Owner
- ENNOSTAR CORP
- Filing Date
- 2018-06-08
- Publication Date
- 2026-08-01
Smart Images
Figure TWG2TB001903582_001 
Figure TWG2TB001903582_002 
Figure TWG2TB001903582_003
Abstract
Description
Display Device and Light-Emitting Device The present disclosure relates to a light-emitting device and a method for manufacturing the same, and more particularly to a light-emitting device including a connection structure with a specific structure and a method for manufacturing the same. Light-Emitting Diodes (LEDs) have characteristics such as low power consumption, low heat generation, long operating life, impact resistance, small size, and fast response speed. Therefore, they are widely used in various fields that require light-emitting components, such as vehicles, household appliances, display screens, and lighting fixtures. Light-emitting diodes belong to a type of monochromatic light and are therefore very suitable as pixels in a display. For example, they can be used as pixels for outdoor or indoor display screens. Among them, improving the resolution of the display is one of the current technological development trends. To improve the resolution, it is necessary to transfer more LEDs serving as pixels to the target substrate. This will give rise to many technical problems. For example, improving the yield of the electrical connection between the LED and the substrate is a major challenge. A display device includes a light-emitting device, a carrier substrate, a light-emitting element, and a connection structure. The light-emitting device serves as a pixel of the display device and includes: a carrier substrate including a conductive region; a light-emitting element including a first light-emitting layer capable of emitting a first light ray and a first contact electrode formed under the first light-emitting layer, wherein the first contact electrode corresponds to the conductive region; and a connection structure including a first electrical connection portion and a protection portion. The protection portion surrounds the first contact electrode and the first electrical connection portion, and the first electrical connection portion electrically connects the conductive region and the first contact electrode. Among them, the first electrical connection portion includes an upper portion and a lower portion, both the upper portion and the lower portion contain gold element, and the atomic percentage of the gold element in the upper portion is greater than the atomic percentage of the gold element in the lower portion. FIG. 1A is a cross-sectional view of a light-emitting element 100A disclosed according to an embodiment of the present disclosure, FIG. 1B shows a cross-sectional view of a light-emitting element 100B disclosed according to another embodiment of the present disclosure, and FIG. 1C shows a cross-sectional view of a light-emitting element 100C disclosed according to another embodiment of the present disclosure. Referring to FIG. 1A, the light-emitting element 100A includes a light-emitting unit 120 and bumps 142a, 144a. In one embodiment, the light-emitting unit 120 includes a light-emitting stack 122 and a contact electrode 124. The contact electrode 124 has a pair 1241, 1242, and the bumps 142a, 144a are electrically connected to the contact electrodes 1241, 1242 respectively. The light-emitting stack 122 can emit a light ray after providing an external power (not shown in the figure). The bumps 142a and 144a can serve as a bridge between the light-emitting stack 122 and the external power and can be part of the connection structure after the light-emitting device is formed. In one embodiment, the bump 142a is directly formed under the contact electrode 1241, and the width of the bump 142a near the upper surface of the contact electrode 1241 is greater than the width of the lower surface away from the contact electrode 1241. In one embodiment, the shape of the bump 142a tapers in width from the upper surface to the lower surface, for example, conical or pyramidal. In one embodiment, the shape of the bump 142a has a needle-like or tubular structure near the lower surface. In one embodiment, the material of the bump 142a is a conductive material, such as: metal or conductive polymer. In one embodiment, the metal includes gold, copper, gold alloy or copper alloy. The shape or material of the bump 144a can be the same as or similar to that of the bump 142a. Referring to FIG. 1B, the light-emitting element 100B includes a light-emitting unit 120 and bumps 142b and 144b. The difference from the light-emitting element 100A lies in the shape of the bumps 142b and 144b. The shape of the bumps 142b and 144b can have a flat area on the lower surface, for example, a truncated cone shape or a truncated pyramid shape. Referring to FIG. 1C, the light-emitting element 100C includes a light-emitting unit 120 and bumps 142c and 144c. The difference from the light-emitting element 100A lies in the bumps 142c and 144c. In one embodiment, the bumps 142c and 144c are thin films respectively formed under the lower surfaces of the contact electrodes 1241 and 1242. In one embodiment, the thickness T1 of the bumps 142c and 144c is about 1 to 12 micrometers. In another embodiment, the thickness T1 of the bumps 142c and 144c is about 2 to 10 micrometers. The material of the bumps 142c and 144c can be a low-melting-point metal or an alloy with a low liquidus melting point. In addition, the above-mentioned metal is, for example, tin or indium, and the above-mentioned alloy is, for example, a gold-tin alloy. In one embodiment, the bumps 142c and 144c each have a flat bottom surface, so that they can be placed on the carrier plate very stably in the subsequent process of bonding with the carrier plate. FIG. 2A is a cross-sectional view showing a light-emitting unit 120A disclosed according to an embodiment of the present disclosure, FIG. 2B is a cross-sectional view showing a light-emitting unit 120B disclosed according to another embodiment of the present disclosure, and FIG. 2C is a cross-sectional view showing a light-emitting unit 120C disclosed according to another embodiment of the present disclosure. The above light-emitting unit 120 may be one of the light-emitting units 120A, 120B, or 120C. Referring to FIG. 2A, the light-emitting unit 120A includes conductive pads 1211A, 1212A, a light-emitting stack 122, an insulating layer 123A (also referred to as a first insulating layer), contact electrodes 1241A, 1242A, and a carrier substrate 126A. Specifically, the light-emitting stack 122 includes a first semiconductor 1221, a light-emitting layer 1222, and a second semiconductor 1223 in sequence from bottom to top and is located under the carrier substrate 126A. The conductive pads 1211A, 1212A are electrically connected to the first semiconductor 1221 and the second semiconductor 1223 respectively. The insulating layer 123A is located under the light-emitting stack 122 and between the two conductive pads 1211A, 1212A. The contact electrodes 1241A, 1242A are electrically connected to the conductive pads 1211A, 1212A respectively. The contact electrodes 1241A, 1242A have a larger bottom surface area or width relative to the conductive pads 1211A, 1212A, so that they can be more easily connected to external electrodes (not shown). The light-emitting unit 120A may be a light-emitting diode die. In one embodiment, the light-emitting unit 120A is a red light-emitting diode die, which can emit light (or the first light) by providing an electric power through a power source, and the dominant wavelength or peak wavelength of the light is between 600 nm and 660 nm. In another embodiment, the light-emitting unit 120A is a green light-emitting diode die and the dominant wavelength or peak wavelength of the emitted light (or the first light) is between 510 nm and 560 nm. In another embodiment, the light-emitting unit 120A is a blue light-emitting diode die and the dominant wavelength or peak wavelength of the emitted light (or the first light) is between 430 nm and 480 nm. In one embodiment, the carrier substrate 126A of the light-emitting unit 120A is a growth substrate, which serves as the substrate for the epitaxial growth of the light-emitting stack 122. Examples of the material for the growth substrate include sapphire. In another embodiment, the carrier substrate 126A is a transparent ceramic substrate, which is connected to the light-emitting stack 122 through a bonding layer (not shown). Examples of the material for the transparent ceramic include alumina. The materials for the conductive pads 1211A and 1212A may include highly conductive metals, such as aluminum. The materials for the contact electrodes 124a and 124b may include highly conductive metals or alloys, such as aluminum, copper, gold, or a gold-tin alloy. Referring to FIG. 2B, the light-emitting unit 120B includes conductive pads 1211B and 1212B, a light-emitting stack 122, contact electrodes 1241B and 1242B, a carrier substrate 126B, and a wavelength conversion layer 128B. In one embodiment, the light-emitting stack 122 is electrically connected to the contact electrodes 1241B and 1242B. The carrier substrate 126B is located under the light-emitting stack 122 and surrounds the contact electrodes 1241B and 1242B. In one embodiment, the growth substrate for the epitaxial growth of the light-emitting stack 122 is partially or completely removed, so the carrier substrate 126B is not the growth substrate. In addition, the wavelength conversion layer 128B is located above the light-emitting stack 122. In one embodiment, the wavelength conversion layer 128B also covers a part of the surface of the carrier substrate 126B. In one embodiment, in the light-emitting unit 120B, the contact electrodes 1241B and 1242B are columnar in shape. The material of the carrier substrate 126B can be a resin, such as epoxy resin. In one embodiment, the wavelength conversion layer 128B includes an adhesive (not shown in the figure, the first adhesive) and a plurality of wavelength conversion particles dispersed in the adhesive (not shown in the figure), wherein the wavelength conversion particles can absorb the first light emitted by the light-emitting stack 122 and convert part or all of it into a second light with a wavelength or spectrum different from that of the first light. In one embodiment, the wavelength conversion particles absorb the first light, such as blue light or UV light, and then completely convert it into a second light, green light, whose main wavelength or peak wavelength is between 510 nm and 560 nm. In another embodiment, the wavelength conversion particles absorb the first light, such as blue light or UV light, and then completely convert it into a second light, red light, whose main wavelength or peak wavelength is between 600 nm and 660 nm. The material of the wavelength conversion particles can include inorganic phosphor, organic fluorescent colorant, semiconductor material, or a combination of the above materials. The semiconductor material includes a semiconductor material of nano-sized crystals, such as quantum-dot light-emitting materials. Referring to FIG. 2C, the light-emitting unit 120C includes a light-emitting stack 122, contact electrodes 1241C and 1242C, a light-blocking fence 125C, a carrier substrate 126C, and a wavelength conversion layer 128C. In one embodiment, the light-emitting stack 122 is electrically connected to the contact electrodes 1241C and 1242C, the carrier substrate 126C is located above the light-emitting stack 122, the wavelength conversion layer 128C is located above the carrier substrate 126C, and the light-blocking fence 125C surrounds the sidewalls of the light-emitting stack 122, the carrier substrate 126C, and the wavelength conversion layer 128C. The light-blocking fence 125C can prevent the first light emitted by the light-emitting stack 122 and / or the second light emitted by the wavelength conversion layer 128C from being emitted from the side of the light-emitting unit 120C, causing crosstalk problems between multiple light-emitting units. The light-blocking fence 125C can include an adhesive (not shown in the figure, the second adhesive) and a plurality of light-absorbing particles or light-reflecting particles dispersed in the adhesive. The material of the light-absorbing particles can be carbon black. The material of the light-reflecting particles can be titanium oxide, zinc oxide, aluminum oxide, barium sulfate, or calcium carbonate. FIGS. 3A to 3E show a flowchart of the manufacturing process of a light-emitting device 300A according to an embodiment of the present disclosure. Referring to FIG. 3A, a carrier substrate is provided. The carrier substrate includes an insulating layer 322 (also referred to as the second insulating layer) and a plurality of conductive regions 323, 324. In one embodiment, the conductive regions 323, 324 are formed on the insulating layer 322. In one embodiment, each of the conductive regions 323, 324 has a pair, respectively corresponding to the contact electrodes 1241, 1242 of the light-emitting unit 120. In addition, the conductive regions 323, 324 may be electrically separated or electrically connected to each other. The material of the insulating layer 322 may be epoxy resin, BT (Bismaleimide Triazine) resin, polyimide resin, a composite material of epoxy resin and glass fiber, or a composite material of BT resin and glass fiber. The material of the conductive regions 323, 324 may be a metal, such as copper, tin, aluminum, silver, or gold. In one embodiment, when the light-emitting device 300A is used as a pixel in a display device, a light-absorbing layer (not shown), such as a black coating, may be formed on the surface of the insulating layer 322 to increase the contrast. Referring to FIG. 3B, pastes 340’a, 340’b containing resins 341a, 341b and conductive particles 342a, 342b are respectively formed on and around the conductive regions 323, 324. In one embodiment, the pastes 340’a, 340’b are formed by a patterning tool, where the patterning tool is, for example, a stencil or a screen. In one embodiment, a plurality of conductive particles 342a are dispersed in the resin 341a. Understandably, a plurality of conductive particles 342b are dispersed in the resin 341b. The materials of the resins 341a, 341b include a thermosetting polymer and a soldering aid. The thermosetting polymer may be epoxy resin. The materials of the conductive particles 342a, 342b may be gold, silver, copper, or a tin alloy. In one embodiment, the material of the conductive particles is a low-melting-point metal or an alloy with a low liquidus melting point. In one embodiment, the melting point or liquidus temperature of the low-melting-point metal or the alloy with a low liquidus melting point is lower than 210°C. In another embodiment, the melting point or liquidus temperature of the low-melting-point metal or the alloy with a low liquidus melting point is lower than 170°C. The material of the alloy with a low liquidus melting point may be a tin-indium alloy or a tin-bismuth alloy. Referring to FIG. 3C, the resins 341a, 341b in the solidifying adhesives 340’a, 340’b are solidified to form the protection parts 343a, 343b in the connection structures 340a, 340b. In this step, the conductive particles 342a, 342b are melted to form the lower parts 3442a, 3442b of the electrical connection parts in the connection structures 340a, 340b. The solidifying method can be heating. In an embodiment, during the solidifying stage, the viscosities of the resins 341a, 341b first decrease and then increase, and the conductive particles 342a, 342b aggregate around the conductive regions 323, 324. The conductive particles 342a, 342b are in a molten state during aggregation. In an embodiment, the solidifying temperature is above 140°C. Referring to FIG. 3D, a light-emitting element 100A-1 is provided. In an embodiment, one light-emitting element 100A-1 corresponds to one conductive region 323 and one connection structure 340a. In another embodiment, multiple light-emitting elements 100A-1, 100A-2 can correspond to multiple conductive regions 323, 324 and connection structures 340a, 340b simultaneously. Referring to FIG. 3E, the bumps 142a, 144a of the light-emitting element 100A-1 are electrically connected to the conductive region 323 through the lower parts 3442a of the electrical connection parts to form a light-emitting device 300A. In an embodiment, an external force provides a downward force to the bumps 142a, 144a of the light-emitting element 100A-1, and they penetrate into the protection part 343a until they contact the lower parts 3442a of the electrical connection parts. At this time, the bumps 142a, 144a serve as the upper parts 3441a of the electrical connection parts in the connection structure 340a. In addition, a neck structure 3443a is formed between the upper part 3441a and the lower part 3442a of the electrical connection part. In an embodiment, the material compositions of the upper part 3441a and the lower part 3442a of the electrical connection part are different. For example, the upper part 3441a of the electrical connection part contains copper element and the lower part 3442a of the electrical connection part contains tin element. Similarly, the bumps 142a, 144a of the light-emitting element 100A-2 are electrically connected to the conductive region 324 through the lower parts 3442b of the electrical connection parts to form another light-emitting device. In an embodiment, the light-emitting element 100A-1 and the light-emitting element 100A-2 are respectively formed into a single light-emitting device. In another embodiment, the light-emitting element 100A-1 and the light-emitting element 100A-2 can be simultaneously formed into multiple light-emitting devices. In an embodiment, the insulating layer 322 can be cut in subsequent steps, so that the light-emitting device 300A and another light-emitting device are physically separated from each other. In another embodiment, the insulating layer 322 does not need to be cut, so that the light-emitting device 300A and another light-emitting device share the insulating layer 322. FIGS. 3A to 3C and FIGS. 3F to 3J show a manufacturing flowchart of a light-emitting device 300B according to another embodiment of the present disclosure. In FIG. 3C, after the steps of forming the protection portions 343a, 343b in the connection structures 340a, 340b and the lower portions 3442a, 3442b of the electrical connection portions, then in FIGS. 3F to 3H, a plurality of recessed portions 347a, 347b are formed in the connection structures 340a, 340b through a jig. In one embodiment, referring to FIG. 3F, a jig 360 having a plurality of convex portions is provided, and the shape of the convex portions is, for example, pointed. Each of the convex portions of the jig 360 is respectively aligned with the lower portions 3442a, 3442b of the electrical connection portions of the connection structures 340a, 340b. Referring to FIG. 3G, the plurality of convex portions in the jig 360 are inserted into the protection portion 343a until they contact the lower portions 3442a, 3442b of the electrical connection portions. Referring to FIG. 3H, the jig 360 is separated from the connection structures 340a, 340b upward to form a plurality of recessed portions 347a, 347b. The plurality of recessed portions 347a, 347b respectively correspond to the conductive regions 323, 324 and the lower portions 3442a, 3442b of the electrical connection portions. Referring to FIG. 3I, the bumps 142b, 144b of the light-emitting elements 100B-1, 100B-2 are respectively aligned with the lower portion 3442a of the electrical connection portion and the conductive region 323. Referring to FIG. 3J, the bumps 142b, 144b of the light-emitting element 100B-1 are electrically connected through the lower portion 3442a of the electrical connection portion and the conductive region 323 to form the light-emitting device 300B. Similarly, the bumps 142a, 144a of the light-emitting element 100B-2 are electrically connected through the lower portion 3442b of the electrical connection portion and the conductive region 324 to form another light-emitting device. In one embodiment, the light-emitting element 100B-1 and the light-emitting element 100B-2 are simultaneously formed into a plurality of light-emitting devices. In another embodiment, the light-emitting element 100B-1 and the light-emitting element 100B-2 can be respectively formed into a single light-emitting device. FIGS. 4A to 4E show a manufacturing flowchart of a light-emitting device 400A according to another embodiment of the present disclosure. Referring to FIG. 4A, a carrier plate is provided. The carrier plate includes an insulating layer 322 and a plurality of conductive regions 323, 324. The structure, function and material of the insulating layer 322 and the plurality of conductive regions 323, 324 can refer to the corresponding paragraphs in FIG. 3A. Referring to FIG. 4B, adhesives 440’a and 440’b are respectively formed on and around the conductive regions 323 and 324. In one embodiment, the adhesives 440’a and 440’b are formed by a patterning tool, where the patterning tool is, for example, a stencil or a screen. In one embodiment, the adhesives 440’a and 440’b contain resin. The material of the resin includes a thermosetting polymer and a solder flux. The thermosetting polymer can be an epoxy resin. In another embodiment, the adhesives 440’a and 440’b contain resin and light-reflecting particles dispersed in the resin. The material of the light-reflecting particles can be titanium oxide, zinc oxide, aluminum oxide, barium sulfate, or calcium carbonate. Referring to FIG. 4C, light-emitting elements 100C-1 and 100C-2 are provided. The bumps 142c-1 and 144c-1 of the light-emitting element 100C-1 are aligned with the conductive region 323, and the bumps 142c-2 and 144c-2 of the light-emitting element 100C-2 are aligned with the conductive region 324. Referring to FIG. 4D, the bumps 142c-1 and 144c-1 of the light-emitting element 100C-1 are inserted through the adhesive 440’a and contact the conductive region 323. Similarly, the bumps 142c-2 and 144c-2 of the light-emitting element 100C-2 are inserted through the adhesive 440’b and contact the conductive region 324. Referring to FIG. 4E, the bumps 142c-1, 144c-1, 142c-2, and 144c-2 are melted. Thus, the bumps 142c-1 and 144c-1 are joined to the conductive region 323 to form electrical connection portions 441 and 442 in the connection structures 440a and 440b. Similarly, the bumps 142c-2 and 144c-2 are joined to the conductive region 324 to form electrical connection portions 444 and 445. In this step, in addition to melting the bumps 142c-1, 144c-1, 142c-2, and 144c-2, the adhesives 440’a and 440’b are cured to form protective portions 443a and 443b in the connection structures 440a and 440b. After melting the bumps 142c-1 and 144c-1 of the light-emitting element 100C-1 and curing the adhesive 440’a, a light-emitting device 400A is formed. Similarly, after melting the bumps 142c-2 and 144c-2 of the light-emitting element 100C-2 and curing the adhesive 440’b, another light-emitting device 400B is formed. In one embodiment, the connection structures 440a and 440b further include light-reflecting particles (not shown in the figure), and the light-reflecting particles are respectively dispersed in the protective portions 443a and 443b. Thus, the reflectivity of the connection structures 440a and 440b to the light emitted by the light-emitting elements 100C-1 and 100C-2 can be increased. Referring to FIG. 5A, in one embodiment, a partial structural diagram of the connection structure 440b in the light-emitting device 400B. There is an electrical connection portion 444A between the contact electrode 1241C-2 of the light-emitting element 100C-2 and the conductive region 324 above the insulating layer 322. In one embodiment, the electrical connection portion 444A includes an upper portion 4441A, a neck portion 4443A, and a lower portion 4442A. The neck portion 4443A is located between the upper portion 4441A and the lower portion 4442A. In one embodiment, the material compositions of the upper portion 4441A and the lower portion 4442A of the electrical connection portion are the same. For example, both contain tin element. In one embodiment, the width of the neck portion 4443A is smaller than the width of the upper portion 4441A. In one embodiment, the width of the upper portion 4441A is smaller than the width of the lower portion 4442A. In one embodiment, the thickness T2 of the electrical connection portion 444 is less than 5 microns. In another embodiment, the thickness T2 of the electrical connection portion 444 is greater than 3 microns. In another embodiment, the thickness T2 of the electrical connection portion 444 is between 1 micron and 4 microns. In one embodiment, at least a part of the bottom surface of the upper portion 4441A is substantially planar. In one embodiment, the distance between the bottom surface of the contact electrode 1241C-2 and the plane of the bottom surface of the upper portion 4441A is less than 1 micron. In another embodiment, the distance between the bottom surface of the contact electrode 1241C-2 and the plane of the bottom surface of the upper portion 4441A is less than 0.5 micron. In one embodiment, the protection portion 443a surrounds the electrical connection portion 444A. In one embodiment, the protection portion 443a covers the contact electrode 1241C-2, the electrical connection portion 444A, and the conductive region 324. The protection portion 443a can protect the contact electrode 1241C-2, the electrical connection portion 444A and / or the conductive region 324, so as to block the contact between moisture or oxygen in the environment and the contact electrode 1241C-2, the electrical connection portion 444A and / or the conductive region 324. In addition, the protection portion 443a can avoid the problem of short circuit caused by softening or melting of the electrical connection portion 444A in a high-temperature environment. Referring to FIG. 5A, in one embodiment, the upper portion 4441A, the neck portion 4443A, and the lower portion 4442A all contain gold element. In one embodiment, the upper portion 4441A, the neck portion 4443A, and the lower portion 4442A all contain gold element and tin element. In one embodiment, the intensity of the gold element in the area A1 of the contact electrode 1241C-2 and the upper portion 4441A is greater than the intensity of the gold element in the area A2 of the conductive region 324 and the lower portion 4442A. This indicates that the atomic percentage of the gold element in the area A1 of the contact electrode 1241C-2 and the upper portion 4441A is greater than the atomic percentage of the gold element in the area A2 of the lower portion 4442A. The above elemental analysis can be performed through Energy-dispersive X-ray spectroscopy (EDX). Referring to FIG. 5B, in another embodiment, a partial structural diagram of the connection structure 440b in the light-emitting device 400B. Different from FIG. 5A, the electrical connection portion 444B of the connection structure 440b does not have a neck structure. In one embodiment, the width of the electrical connection portion 444B gradually widens from the contact electrode 1241C-2 towards the conductive region 324. In one embodiment, the thickness T2 of the electrical connection portion 444 is less than 3 microns. The thickness T3 of the electrical connection portion 444 is between 1 micron and 3 microns. Referring to FIG. 5C, in another embodiment, a partial structural diagram of the connection structure 440b in the light-emitting device 400B. Different from FIG. 5A, the thicknesses of the two edges of the electrical connection portion 444C are different, having thicknesses T4 and T5. In addition, the thickness T4 is less than the thickness T5. The structure corresponding to the thickness T5 is similar to that in FIG. 5A and has a neck structure. The structure corresponding to the thickness T4 is similar to that in FIG. 5B and does not have a neck structure. Referring to FIG. 5D, in another embodiment, a partial structural diagram of the connection structure 440b in the light-emitting device 400B. The interior of the electrical connection portion 444D has holes 444d. The electrical connection portion 444D can include a single or multiple holes 444d. The shape of the holes 444d can be regular or irregular. The regular shape can be circular, elliptical, or polygonal. FIG. 6 shows a top view of a light emitting module 600 disclosed according to an embodiment of the present disclosure. In one embodiment, the light emitting module 600 includes a first pixel 610 and a second pixel 620. It is understood that the number of pixels depends on the requirements of the light emitting module 600. Here, only two pixels in the light emitting module 600 are shown. The first pixel 610 includes six sub-pixel blocks 611a, 611b, 612a, 612b, 613a, 613b. The sub-pixel blocks 611a, 611b, 612a, 612b, 613a, 613b can respectively provide light emitting elements 614a, 614b, 615a, 615b, 616a, 616b formed therein. The structures of the light emitting elements 614a, 614b, 615a, 615b, 616a, 616b can be the above-mentioned light emitting element 100A, light emitting element 100B, light emitting element 100C or a combination thereof, or any suitable light emitting element. The sub-pixel block 611a and the sub-pixel block 611b form a group. The sub-pixel block 612a and the sub-pixel block 612b form a group. And the sub-pixel block 612a and the sub-pixel block 612b form a group. Two sub-pixel blocks forming a group can provide a backup function. When one sub-pixel block cannot operate or its performance cannot meet the requirements during testing, for example: insufficient brightness or color point shift, another sub-pixel block can be provided for another light emitting element during subsequent repair. Therefore, not all of the sub-pixel blocks 611a, 611b, 612a, 612b, 613a, 613b have the light emitting elements 614a, 614b, 615a, 615b, 616a, 616b. In one embodiment, initially, only the light emitting elements 614a, 615a, 616a are respectively in the sub-pixel blocks 611a, 612a, 613a. When the test results show that the light emitting elements 614a, 615a, 616a are all normal, the light emitting elements 614b, 615b, 616b will not be placed in the sub-pixel blocks 611b, 612b, 613b. If the light emitting element 614a is abnormal, the light emitting element 614a will not conduct, and the light emitting element 614b will be used to replace it. The light emitting elements 615a, 616a are similar to the situation of the light emitting element 614a. Similarly, the second pixel 620 includes six sub-pixel blocks 621a, 621b, 622a, 622b, 623a, 623b. The sub-pixel blocks 621a, 621b, 622a, 622b, 623a, 623b can respectively provide light emitting elements 624a, 624b, 625a, 625b, 626a, 626b formed therein. The sub-pixel blocks and the light emitting elements in the second pixel 620 have substantially the same functions as those in the first pixel 610. FIGS. 7A to 7D show a manufacturing flowchart of a repaired light-emitting module disclosed according to an embodiment of the present disclosure. Referring to FIG. 7A, a carrier board is provided. The carrier board includes an insulating layer 722 (second insulating layer) and a plurality of conductive regions 723, 724. The structure, function, and materials of the insulating layer 722 and the plurality of conductive regions 723, 724 can be referred to the corresponding paragraphs of FIG. 3A. A light-emitting element 614a is formed on the conductive region 724 of the carrier board. In one embodiment, the light-emitting element 614a is electrically connected to the conductive region 724, and the electrical connection is through general soldering 742. In other embodiments, the electrical connection is through the manner of any one of the embodiments in the above paragraphs of FIGS. 3A to 4E. At this time, the conductive region 723 is exposed. After testing the light-emitting element 614a, the light-emitting element 614a is considered abnormal. Referring to FIG. 7B, a paste 340' containing a resin 341 and conductive particles 342 is formed on and around the conductive region 323. The structure, function, and materials of the resin 341, the conductive particles 342, and the paste 340' can be referred to the corresponding paragraphs of FIG. 3B. Referring to FIG. 7C, a light-emitting element 614b is provided, and the electrodes 614b-1, 614b-2 of the light-emitting element 614b are aligned with the conductive region 723. The electrodes 614b-1, 614b-2 of the light-emitting element 614b can be general metal pads, general bumps, or any one of the bumps in FIGS. 1A to 1C. Referring to FIG. 7D, the light-emitting element 614b is placed on the conductive region 723 and the conductive particles 342 are melted to form a connection structure 340. In this step, the resin 341 in the paste 340' is cured to form a protection part 343 in the connection structure 340. The change descriptions of the resin 341, the conductive particles 342, and the paste 340' in this step can be referred to the corresponding paragraphs of FIG. 3C. FIGS. 7A, 7E to 7G show a manufacturing flowchart of a repaired light-emitting module disclosed according to another embodiment of the present disclosure. After FIG. 7A, then FIG. 7E, a paste 440' is respectively formed on and around the conductive region 723. The forming manner, function, and materials of the paste 440' can be referred to the corresponding paragraphs of FIG. 4B. Referring to FIG. 7F, a light-emitting element 100C is provided, and the bumps 142c, 144c of the light-emitting element 100C are aligned with the conductive region 723. The bumps 142c, 144c of the light-emitting element 100C can be referred to the corresponding paragraphs of FIG. 1C. Referring to FIG. 7G, the bumps 142c, 144c are melted. Therefore, the bumps 142c, 144c are joined to the conductive region 723 to form electrical connection parts 441, 442 in the connection structure 440. In this step, in addition to melting the bumps 142c, 144c, the paste 440' is also cured to form a protection part 443 in the connection structure 440. Figures 8A to 8G show the manufacturing flowcharts of transferring a plurality of light-emitting elements to a target substrate according to an embodiment of the present disclosure. Referring to Figure 8A, a transfer device is provided. In one embodiment, the transfer device has an imprint head 820, and the imprint head 820 includes a plurality of cylinders 822. In one embodiment, the plurality of cylinders 822 are spaced at the same distance from each other. In another embodiment, the distances between the plurality of cylinders 822 may be different from each other. In addition, there is glue 810' at the bottom of each of the plurality of cylinders 822. In one embodiment, the material of the glue 810' is a thermal release material. The characteristic of the thermal release material is that its viscosity changes after heating. In one embodiment, the thermal release material is a thermal release tape whose viscosity decreases after heating. The decrease in viscosity may mean that the adhesive strength after heating is less than one-twentieth of that before heating. Referring to Figure 8B, a raw substrate 830 is provided, and the raw substrate 830 includes a plurality of light-emitting elements 860. The raw substrate 830 can be used as a carrier for the light-emitting elements 860. In one embodiment, the material of the raw substrate 830 can be plastic, glass, or sapphire. In one embodiment, the light-emitting elements 860 include semiconductor materials. The structures of the plurality of light-emitting elements 860 can be the above-mentioned light-emitting element 100A, light-emitting element 100B, light-emitting element 100C, or a combination thereof, or any suitable light-emitting element. The plurality of light-emitting elements 860 include two groups, one group is the selected light-emitting elements 862, and the other group is the unselected light-emitting elements 864. In one embodiment, the unselected light-emitting elements 864 are interspersed among the selected light-emitting elements 862. The number of interspersed elements can be adjusted as needed, for example: 1, 2, or 3. The number of interspersed elements can be fixed or variable. The plurality of cylinders 822 correspond to the selected light-emitting elements 862. In one embodiment, the glue 810' contacts the selected light-emitting elements 862. Referring to Figure 8C, the selected light-emitting elements 862 are separated from the raw substrate 830. In one embodiment, the bonding force of the glue 810' of the plurality of cylinders 822 is greater than the bonding force between the selected light-emitting elements 862 and the raw substrate 830, so that the plurality of cylinders 822 grab the selected light-emitting elements 862. Referring to Figure 8D, a target substrate 850 is provided. The upper surface of the target substrate 850 has a plurality of conductive pads 852. A glue (or self-assembling glue) 840' is formed above and around the conductive pads 852, and the selected light-emitting elements 862 on the imprint head 820 are aligned with the conductive pads 852. The target substrate 850 can be a circuit board substrate. The structure, function, and material of the glue (or self-assembling glue) 840' can refer to the corresponding paragraphs in Figures 3B and 7B. Referring to FIG. 8E, the selected light-emitting element 862 is brought into contact with the adhesive 840' on the conductive pad 852. In one embodiment, a pressing force is applied to the light-emitting element 862 such that a contact electrode (not shown) on the light-emitting element 862 is in contact with or very close to the conductive pad 852. At this time, at least a part of the bottom of the light-emitting element 862 is covered by the adhesive 840'. Referring to FIG. 8F, the selected light-emitting element 862 is placed on the conductive pad 852 and energy E1 is provided to melt the conductive particles (not shown) in the adhesive 840' and cure the resin (not shown) in the adhesive 840' to form a cured adhesive layer (or connection structure) 840. For the description of the changes in the resin, conductive particles, and adhesive 840' in this step, reference can be made to the corresponding paragraph in FIG. 3C. In one embodiment, the energy E1 is heat, which melts the conductive particles, cures the resin, and reduces the viscosity of the adhesive 810' to form the adhesive 810. In this way, the bonding force of the cured adhesive layer (or connection structure) 840 to the light-emitting element 862 is greater than that of the adhesive 810. Referring to FIG. 8G, the selected light-emitting element 862 is formed on the target substrate 850 and separated from the transfer device. Since in the previous step, the bonding force of the cured adhesive layer 840 to the light-emitting element 862 is greater than the bonding force of the adhesive 810 to the light-emitting element 862, when the stamper 820 of the transfer device moves upward, the selected light-emitting element 862 will be fixed on the target substrate 850 and separated from the stamper 820 of the transfer device. In this step, the light-emitting element 862 is also electrically connected to the conductive pad 852 of the target substrate 850. FIGS. 9A to 9B show a manufacturing flowchart of transferring a plurality of light-emitting elements to a target substrate according to another embodiment of the present disclosure. The steps before FIG. 9A can be referred to the corresponding paragraphs in FIGS. 8A to 8E. In this embodiment, the adhesive 810' is a photo-dissociable material. The characteristics of the photo-dissociable material or photo-curable material are that the viscosity of the material changes after being irradiated with light. In one embodiment, the photo-dissociable material is an ultraviolet photo-dissociable adhesive (UV release tape) whose viscosity decreases after being irradiated with ultraviolet light. Referring to FIG. 9A, the selected light-emitting element 862 is placed on the conductive pad 852 and energy E1 is provided to melt the conductive particles (not shown) in the adhesive 840' and cure the resin (not shown) in the adhesive 840' to form a cured adhesive layer (or connection structure) 840. In addition, energy E2 is provided to the adhesive 810' to transform the adhesive 810' into the adhesive 810 with a lower viscosity. In one embodiment, the energy E1 is thermal energy, the energy E2 is ultraviolet light, and the adhesive 810' is an ultraviolet photo-dissociable adhesive. For the description of the changes in the adhesive 840' in this step, reference can be made to the corresponding paragraph in FIG. 3C. Referring to FIG. 9B, the selected light-emitting element 862 is formed on the target substrate 850 and separated from the transfer device. This step can be referred to the corresponding paragraph in FIG. 8G. FIGs. 10A to 10B show manufacturing flowcharts of transferring a plurality of light-emitting elements to a target substrate according to another embodiment of the present disclosure. The steps before FIG. 10A can refer to the corresponding paragraphs of FIGS. 8A to 8E. In this embodiment, the adhesive 810' is a thermally decomposable material, and solder is formed on the conductive pad 852. In one embodiment, the solder formed on the conductive pad 852 has eutectic characteristics. Referring to FIG. 10A, the selected light-emitting element 862 is placed on the conductive pad 852 and energy E1 is provided to melt the solder to form a connection structure 1040. In addition, an energy E3 is provided simultaneously so that the light-emitting element 862 and the conductive pad 852 can be in close contact. In one embodiment, the energy E1 is thermal energy and the energy E3 is pressure. Referring to FIG. 10B, after the connection structure 1040 is formed under the selected light-emitting element 862, the selected light-emitting element 862 is formed on the target substrate 850 and separated from the transfer device. This step can refer to the corresponding paragraph of FIG. 8G. FIGs. 11A to 11B show manufacturing flowcharts of transferring a plurality of light-emitting elements to a target substrate according to another embodiment of the present disclosure. The steps before FIG. 11A can refer to the corresponding paragraphs of FIGS. 8A to 8E. In this embodiment, the adhesive 810' is a thermally decomposable material, and the paste 1140' formed on the conductive pad 852 is anisotropic conductive paste (ACP). Referring to FIG. 11A, the selected light-emitting element 862 is placed on the conductive pad 852 and energy E1 is provided to cure the resin (not shown) in the paste 1140' to form a cured paste layer (or connection structure) 1140. In addition, an energy E3 is provided simultaneously so that the light-emitting element 862 and the conductive pad 852 can be closely adjacent, and the light-emitting element 862 and the conductive pad 852 are electrically connected through the conductive particles in the paste 1140'. In one embodiment, the energy E1 is thermal energy and the energy E3 is pressure. Referring to FIG. 11B, after the connection structure 1140 is formed under the selected light-emitting element 862, the selected light-emitting element 862 is formed on the target substrate 850 and separated from the transfer device. This step can refer to the corresponding paragraph of FIG. 8G. FIG. 12 shows the imprint head 1220 of the transfer device 1200 disclosed according to another embodiment of the present disclosure. The imprint head 1220 in the transfer device 1200 has a plurality of columns 1222. From the cross-sectional view of the structure of the columns 1222, the width of the bottom of the column 1222 is greater than the width of the upper part of the column 1222. Grooves are formed between the columns 1222, and the width of the grooves gradually narrows from the inside to the outside. In this way, when a part of the adhesive 1210' is filled into the grooves, the grasping force of the transfer device 1200 on the adhesive 1210' can be increased to prevent the adhesive 1210' from falling off the transfer device 1200. The transfer device 1200 can be used in any of the embodiments in FIGS. 8A to 11B above or any embodiment suitable for transferring light-emitting elements. FIGS. 13A and 13B show schematic diagrams of the connection structure before and after curing in a light-emitting device disclosed according to an embodiment of the present disclosure. Referring to FIG. 13A, the upper surface of the target substrate 850 has a plurality of conductive pads 852. Before curing, a glue (or self-assembling glue) 340' is formed above and around the conductive pads 852, and the light-emitting element 862 is formed on the conductive pads 852 and partially buried in the glue 340'. Specifically, the glue 340' includes a resin 341 and conductive particles 342 dispersed in the resin 341. There is a bonding region 1301 above the conductive pad 852 and below the light-emitting element 862, and non-bonding regions 1302 are between the conductive pads 852 and between the light-emitting elements 862. The structures, functions, and materials of the glue 340', the resin 341, and the conductive particles 342 can be referred to the corresponding paragraphs in FIG. 3B. Referring to FIG. 13B, after curing, the connection structure 340 is formed, and the conductive particles 342 are melted and aggregated inside and around the bonding region 1301 to become the electrical connection part 344. In addition, the resin 341 becomes the protection part 343 after curing. In one embodiment, a small part of the conductive particles 342 are dispersed in the non-bonding region 1302. The conductive particles 342 in the non-bonding region 1302 are at least partially separated from each other, so there will be no short-circuit problem. FIGS. 14A and 14B show schematic diagrams of the connection structure before and after curing in a light-emitting device disclosed according to another embodiment of the present disclosure. Before curing, referring to FIG. 14A, different from FIG. 13A, the resin 341 is formed separately under and around the two light-emitting elements 862, but they are separated from each other. Similarly, the non-bonding region 1402 has two regions, each corresponding to one light-emitting element 862, and these two regions of the non-bonding region 1402 are separated from each other. The part of the bonding region 1401 is the same as that in FIG. 13A. After curing, referring to FIG. 14B, the structures, functions, and materials of the connection structure 340, the protection part 343, and the electrical connection part 344 can be referred to the corresponding paragraphs in FIG. 13B. FIGS. 15A to 15D show a manufacturing flowchart of transferring a plurality of light-emitting elements to a target substrate according to another embodiment of the present disclosure. Referring to FIG. 15A, a raw substrate 1530 is provided, and a plurality of light-emitting elements 860 are included on the raw substrate 1530. In addition, a target substrate 850 is provided, and a plurality of conductive pads 852 are provided on the upper surface of the target substrate 850. In one embodiment, the raw substrate 1530 includes a carrier substrate 1532 and a release adhesive 1534. The release adhesive 1534 temporarily fixes the plurality of light-emitting elements 860 on the carrier substrate 1532. The plurality of light-emitting elements 860 includes two groups, one group is the selected light-emitting elements 862, and the other group is the unselected light-emitting elements 864. In one embodiment, each of the selected light-emitting elements 862 includes two contact electrodes 862a. The structures, functions, and materials of the raw substrate 1530, the light-emitting elements 860, the selected light-emitting elements 862, the unselected light-emitting elements 864, the target substrate 850, and the conductive pads 852 can refer to the corresponding paragraphs in FIGS. 8B and 8D. Referring to FIG. 15B, a glue 340' is respectively formed on and around the conductive pads 852, and the selected light-emitting elements 862 are aligned with the conductive pads 852 having the glue 340'. The structure, function, and materials of the glue 340' can refer to the corresponding paragraph in FIG. 3B. Referring to FIG. 15C, the selected light-emitting elements 862 are placed on the conductive pads 852 and energy E1 is provided to melt the conductive particles (not shown) in the glue 340' and cure the resin (not shown) in the glue 340'. The related descriptions of the energy E1, the resin, the conductive particles, and the glue 340' in this step can refer to the corresponding paragraphs in FIGS. 3C, 8F, and 13A to 14B. Referring to FIG. 15D, the selected light-emitting elements 862 are formed on the target substrate 850 and separated from the transfer device. After the energy E1, the viscosity of the release adhesive 1534 is reduced, and the glue 340' is transformed into a connection structure 340, and a protection part 343 and an electrical connection part 344 are formed. The bonding force of the connection structure 340 to the selected light-emitting elements 862 is greater than the bonding force of the release adhesive 1534 to the selected light-emitting elements 862. FIGS. 15A, 15B, 15E to 15D show a manufacturing flowchart of transferring a plurality of light-emitting elements to a target substrate according to another embodiment of the present disclosure. After FIG. 15B, FIG. 15E follows. The difference between FIG. 15E and FIG. 15C is that the position where the energy E1 is provided can also be provided from the place of the raw substrate 1530. Then, FIG. 15D follows. FIGS. 15A, 15B, 15F to 15D show manufacturing flowcharts of transferring a plurality of light-emitting elements to a target substrate according to another embodiment of the present disclosure. After FIG. 15B, FIG. 15F follows. FIG. 15F is different from FIG. 15C in that energy E4 is provided in a local area. In one embodiment, the energy E4 is a laser, so heat can be provided in a local area, such as the bonding area. Then, FIG. 15D follows. FIGS. 16A to 16C show manufacturing flowcharts of transferring a plurality of light-emitting elements to a target substrate according to another embodiment of the present disclosure. Referring to FIG. 16A, a raw substrate 1530 is provided, and a plurality of light-emitting elements 860 are included on the raw substrate 1530. In addition, the lower surfaces of the plurality of light-emitting elements 860 are covered with an adhesive 340'. Furthermore, a target substrate 850 is provided, and the upper surface of the target substrate 850 has a plurality of conductive pads 852. The structures, functions, and materials of the raw substrate 1530, the light-emitting elements 860, the target substrate 850, and the conductive pads 852 can refer to the corresponding paragraphs of FIGS. 8B, 8D, and 15A. Referring to FIG. 16B, a selected light-emitting element 862 is placed on the conductive pad 852, and energy E1 is provided to melt the conductive particles (not shown) in the adhesive 340' and cure the resin (not shown) in the adhesive 340'. The relevant descriptions of the energy E1, the resin, the conductive particles, and the adhesive 340' in this step can refer to the corresponding paragraphs of FIGS. 3C, 8F, and 13A to 14B. Referring to FIG. 16C, the selected light-emitting element 862 is formed on the target substrate 850 and separated from the transfer device. The relevant description of this step can refer to the corresponding paragraph of FIG. 15D. FIGS. 16D, 16E to 16C show manufacturing flowcharts of transferring a plurality of light-emitting elements to a target substrate according to another embodiment of the present disclosure. Referring to FIG. 16D, a raw substrate 1530 is provided, and a plurality of light-emitting elements 860 are included on the raw substrate 1530. In addition, the lower surfaces of the plurality of light-emitting elements 860 are covered with an adhesive 340'. Furthermore, a target substrate 850 is provided, and the upper surface of the target substrate 850 has a plurality of conductive pads 852. The structures, functions, and materials of the raw substrate 1530, the light-emitting elements 860, the target substrate 850, and the conductive pads 852 can refer to the corresponding paragraphs of FIGS. 8B, 8D, and 15A. Referring to FIG. 16E, energy E4 is provided in a local area to melt conductive particles (not shown) in the adhesive 340' and cure the resin (not shown) in the adhesive 340'. In one embodiment, the energy E4 is a laser. For the relevant descriptions of the energy E4, resin, conductive particles, and the adhesive 340' in this step, reference can be made to the corresponding paragraphs in FIGS. 3C, 8F, 13A to 14B, and 15F. FIG. 16E is followed by FIG. 16C. FIG. 17A shows a bottom view of a light-emitting element disclosed according to an embodiment of the present disclosure. FIG. 17B shows a bottom view of a light-emitting element with a covering connection structure disclosed according to an embodiment of the present disclosure. FIG. 17C shows a bottom view of a target substrate with a covering connection structure disclosed according to an embodiment of the present disclosure. FIGS. 17A to 17C can be referred to together, and they can represent the relationship between the light-emitting element, the connection structure, and the target substrate in any embodiment disclosed in the present disclosure. Referring to FIG. 17A, in the bottom view of the selected light-emitting element 862, it includes two contact electrodes 862a and a boundary 862b. The area enclosed by the boundary 862b is A3. Referring to FIG. 17B, the connection structure 340 covers a part of the bottom surface of the selected light-emitting element 862. In addition, the area of the connection structure 340 covering the selected light-emitting element 862 is A4. In one embodiment, the ratio of the area A4 to the area A3 is about between 60% and 80%. If the ratio of the area A4 to the area A3 is greater than 80%, the adhesive 340' of the connection structure 340 in the uncured stage may adhere to the adjacent unselected light-emitting element 864, causing the unselected light-emitting element 864 to be accidentally transferred to the target substrate as well. Referring to FIG. 17C, the connection structure 340 covers a part of the bottom surface of the conductive pad 852. The area of the connection structure 340 covering the selected conductive pad 852 is A5. In one embodiment, the ratio of the area A5 to the area A3 is about between 60% and 80%. If the ratio of the area A5 to the area A3 is greater than 80%, the adhesive 340' of the connection structure 340 in the uncured stage may adhere to the adjacent unselected light-emitting element 864, causing the unselected light-emitting element 864 to be transferred to the target substrate as well by accident. FIGS. 18A to 18D show a manufacturing flowchart of transferring a plurality of light-emitting elements to a target substrate according to another embodiment of the present disclosure. Referring to FIG. 18A, the difference from FIG. 15A is that there are spacers 1811 and 1812 between the original substrate 1530 and the target substrate 850. In one embodiment, the spacers 1811 and 1812 are respectively on the target substrate 850 and at the edges of the target substrate 850, for example: four corners. In another embodiment, the spacers 1811 and 1812 can be in other areas on the target substrate 850, for example: the middle area. In one embodiment, the shape of the spacers 1811 and 1812 is spherical. In other embodiments, the shape of the spacers 1811 and 1812 can be columnar, cuboid or conical. The number of the spacers 1811 and 1812 can be adjusted according to requirements. The relevant descriptions of other features in FIG. 18A can refer to the corresponding paragraphs in FIG. 15A. Referring to FIG. 18B, the adhesive 1840'-1 is respectively formed on and around the conductive pad 852, and the selected light-emitting element 862 is aligned with the conductive pad 852 having the adhesive 1840'-1. The structure, function and material of the adhesive 1840'-1 can refer to the corresponding paragraphs in FIG. 3B. Referring to FIG. 18C, the selected light-emitting element 862 is placed on the conductive pad 852 and energy E1 is provided to melt the conductive particles (not shown) in the adhesive 1840'-1 and cure the resin (not shown) in the adhesive 1840'-1. The distance between the original substrate 1530 and the target substrate 850 is limited by the diameter R of the spacers 1811 and 1812. Therefore, the introduction of the spacers 1811 and 1812 can provide a more uniform distance between the original substrate 1530 and the target substrate 850. In other words, the thickness Y of the selected light-emitting element 862 is fixed. Therefore, the distance h from the light-emitting element 862 to the target substrate 850 can be fixed because R = Y + h. The relevant descriptions of the energy E1, resin, conductive particles and the adhesive 1840'-1 in this step can refer to the corresponding paragraphs in FIGS. 3C, 8F and 13A to 14B. Referring to FIG. 18D, the selected light-emitting element 862 is formed on the target substrate 850 and separated from the transfer device. The relevant descriptions of this step can refer to the corresponding paragraphs in FIG. 15D. FIG. 18A, FIG. 18B, FIGS. 18E to 18F show manufacturing flowcharts of transferring a plurality of light-emitting elements to a target substrate according to another embodiment of the present disclosure. FIG. 18E follows FIG. 18B, FIG. 18E is similar to FIG. 18C, and FIG. 18F is similar to FIG. 18D. Referring to FIG. 18E, in one embodiment, an adhesive 1840'-2 is formed on and around the conductive pad 852, and the width of the adhesive 1840'-2 is greater than the width W of the light-emitting element 860 and less than the width W of the light-emitting element 860 plus the pitch d between the light-emitting elements 860. Referring to FIG. 18F, after the conductive particles (not shown) in the molten adhesive 1840'-2 and the resin (not shown) in the cured adhesive 1840'-2, the width of the connection structure 1840-2 is less than the width W of the light-emitting element 860 plus the pitch d between the light-emitting elements 860. Thus, it is possible to avoid the situation that the adhesive 1840'-2 in the uncured stage may adhere to the adjacent unselected light-emitting elements 864, resulting in the accidental transfer of the unselected light-emitting elements 864 to the target substrate. FIGS. 18A, 18G to 18I show manufacturing flowcharts of transferring a plurality of light-emitting elements to a target substrate according to another embodiment of the present disclosure. FIG. 18G follows FIG. 18A. Referring to FIG. 18G, the difference between FIG. 18G and FIG. 18B is that the adhesive 1840'-3 is first formed on the selected light-emitting element 862. Then, FIG. 18H is similar to FIG. 18C, and FIG. 18F is similar to FIG. 18D. FIGS. 19A and 19B show schematic diagrams of the connection structure before and after curing in the light-emitting device disclosed in FIGS. 18A to 18D. FIG. 19A shows before curing (at a low temperature), an adhesive (or self-assembled adhesive) 1840'-1 is formed on and around the conductive pad 852, and a lower surface portion of the light-emitting element 862 is buried in the adhesive 1840'-1. Since no pressing force is provided, the adhesive 1840'-1 only covers the lower surface of the light-emitting element 862 and does not cover the side surface of the light-emitting element 862. In addition, the conductive particles 1842-1 are substantially uniformly dispersed in the resin 1841-1. There is a bonding region 1901 between the conductive pad 852 and below the light-emitting element 862, and non-bonding regions 1902 between the conductive pads 852 and between the light-emitting elements 862. The density of the conductive particles 1842-1 in the bonding region 1901 and the non-bonding region 1902 is substantially the same. FIG. 19B shows after curing (at a high temperature), the adhesive 1840'-1 forms a connection structure 1840-1. Similarly, the connection structure 1840-1 only covers the lower surface of the light-emitting element 862 and does not cover the side surface of the light-emitting element 862. However, the density of the conductive particles 1842-1 in the bonding region 1901 is greater than that in the non-bonding region 1902. FIG. 19C shows a top view of a light-emitting device disclosed according to the example of FIG. 18D. In one embodiment, on the target substrate 850, the area A(P) of the connection structure 1840-1 is smaller than the area A(C) of the light-emitting element 862. In one embodiment, the area A(S) of the electrical connection portion 1844-1 is larger than the area A(E) of the contact electrode 862a. FIG. 19D shows a top view of a light-emitting device disclosed according to the example of FIG. 18F. In one embodiment, on the target substrate 850, the area A(P) of the connection structure 1840-2 is larger than the area A(C) of the light-emitting element 862. The above-described embodiments are only for illustrating the technical idea and features of the present invention, and the purpose is to enable those skilled in the art to understand the content of the present invention and implement it accordingly. It should not be used to limit the patent scope of the present invention. That is, all equivalent changes or modifications made according to the spirit disclosed in the present invention should still be covered within the patent scope of the present invention. 100a-1, 100a-2, 300A, 300B, 400A, 400B: Light-emitting device 100A, 100A-1, 100A-2, 100B, 100B-1, 100B-2, 100C, 100C-1, 100C-2, 614a, 614b, 615a, 615b, 616a, 616b, 860: Light-emitting element 120, 120A, 120B, 120C: Light-emitting unit 1211A, 1211B, 1212A, 1212B, 852: Conductive pad 122: Light-emitting stack 1221: First semiconductor 1222: Light-emitting layer 1223: Second semiconductor 123A, 322, 722: Insulating layer 124, 1241, 1241A, 1241B, 1241C, 1241C-1, 1241C-2, 1242, 1242A, 1242B, 1242C, 1242C-1, 1242C-2, 862a: Contact electrode 125C: Light-blocking fence 126A, 126B, 126C, 1532: Carrier substrate 128B, 128C: Wavelength conversion layer 142a, 142b, 142c, 142c-1, 142c-2, 144a, 144b, 144c, 144c-1, 144c-2: Bump 323, 324, 723, 724: Conductive region 340, 340a, 340b, 440, 440a, 440b, 840, 1040, 1140, 1840-1, 1840-2: Linking structure 340’, 340’a, 340’b, 440’, 440’a, 440’b, 840’, 1140’, 1840’-1, 1840’-2: Adhesive 341a, 341b, 1841-1: Resin 342a, 342b, 1842-1: Conductive particle 343, 343a, 343b, 443, 443a, 443b: Protection part 344, 344a, 344b, 441, 442, 444, 444A, 444B, 444C, 444D, 445, 1844-1: Electrical connection part 3441a, 3441b, 4441A: Upper part of the electrical connection part 3442a, 3442b, 4442A: Lower part of the electrical connection part 3443a, 3443b, 4442A: Neck of the electrical connection part 444d: Hole 600: Light-emitting module 610: First pixel 611a, 611b, 612a, 612b, 613a, 613b, 621a, 621b, 622a, 622b, 623a, 623b: Sub-pixel block 620: Second pixel 614b-1, 614b-2: Electrode 810’, 1210’: Adhesive 820, 1220: Imprint head 822, 1222: Cylinder 830, 1530: Original substrate850: Target substrate 862: Selected light-emitting element 862b: Boundary 864: Unselected light-emitting element 1200: Transfer device A1, A2, A3, A4, A5, A(C), A(E), A(P), A(S): Areas E1, E2, E3, E4: Energies R: Diameter T1, T2, T3, T4, T5, Y: Thicknesses W: Width h: Distance FIG. 1A shows a cross-sectional view of a light-emitting element disclosed according to an embodiment of the present disclosure. FIG. 1B shows a cross-sectional view of a light-emitting element disclosed according to another embodiment of the present disclosure. FIG. 1C shows a cross-sectional view of a light-emitting element disclosed according to another embodiment of the present disclosure. FIG. 2A shows a cross-sectional view of a light-emitting unit disclosed according to an embodiment of the present disclosure. FIG. 2B shows a cross-sectional view of a light-emitting unit disclosed according to another embodiment of the present disclosure. FIG. 2C shows a cross-sectional view of a light-emitting unit disclosed according to another embodiment of the present disclosure. FIGS. 3A to 3E show a manufacturing flowchart of a light-emitting device according to an embodiment of the present disclosure. FIGS. 3A to 3D and FIGS. 3F to 3J show a manufacturing flowchart of a light-emitting device according to another embodiment of the present disclosure. FIGS. 4A to 4E show a manufacturing flowchart of a light-emitting device according to another embodiment of the present disclosure. FIGS. 5A to 5D show a partial structural view of a light-emitting device according to an embodiment of the present disclosure. FIG. 6 shows a top view of a light-emitting module disclosed according to an embodiment of the present disclosure. FIGS. 7A to 7D show a manufacturing flowchart of a repaired light-emitting module disclosed according to an embodiment of the present disclosure. FIG. 7A, FIGS. 7E to 7G show a manufacturing flowchart of a repaired light-emitting module disclosed according to another embodiment of the present disclosure. FIGS. 8A to 8G show a manufacturing flowchart of transferring a plurality of light-emitting elements to a target substrate disclosed according to an embodiment of the present disclosure. FIGS. 9A to 9B show a manufacturing flowchart of transferring a plurality of light-emitting elements to a target substrate disclosed according to another embodiment of the present disclosure. FIGS. 10A to 10B show a manufacturing flowchart of transferring a plurality of light-emitting elements to a target substrate disclosed according to another embodiment of the present disclosure. FIGS. 11A to 11B show a manufacturing flowchart of transferring a plurality of light-emitting elements to a target substrate disclosed according to another embodiment of the present disclosure. FIG. 12 shows a stamper of a transfer device disclosed according to another embodiment of the present disclosure. FIGS. 13A and 13B show schematic views of a connection structure before and after curing in a light-emitting device disclosed according to an embodiment of the present disclosure. FIGS. 14A and 14B show schematic views of a connection structure before and after curing in a light-emitting device disclosed according to another embodiment of the present disclosure. FIGS. 15A to 15D show a manufacturing flowchart of transferring a plurality of light-emitting elements to a target substrate disclosed according to another embodiment of the present disclosure. FIGS. 15A, 15B, 15E to 15D show a manufacturing flowchart of transferring a plurality of light-emitting elements to a target substrate disclosed according to another embodiment of the present disclosure. FIGS. 15A, 15B, 15F to 15D show a manufacturing flowchart of transferring a plurality of light-emitting elements to a target substrate disclosed according to another embodiment of the present disclosure. FIGS. 16A to 16C show a manufacturing flowchart of transferring a plurality of light-emitting elements to a target substrate disclosed according to another embodiment of the present disclosure. FIGS. 16D, 16E to 16C show a manufacturing flowchart of transferring a plurality of light-emitting elements to a target substrate disclosed according to another embodiment of the present disclosure. FIG. 17A shows a bottom view of a light-emitting element disclosed according to an embodiment of the present disclosure. FIG. 17B shows a bottom view of a light-emitting element with a covering connection structure disclosed according to an embodiment of the present disclosure. FIG. 17C shows a bottom view of a target substrate with a covering connection structure disclosed according to an embodiment of the present disclosure. FIGS. 18A to 18D show a manufacturing flowchart of transferring a plurality of light-emitting elements to a target substrate disclosed according to another embodiment of the present disclosure. FIGS. 18A, 18B, 18E to 18F show a manufacturing flowchart of transferring a plurality of light-emitting elements to a target substrate disclosed according to another embodiment of the present disclosure. FIGS. 18A, 18G to 18I show a manufacturing flowchart of transferring a plurality of light-emitting elements to a target substrate disclosed according to another embodiment of the present disclosure. FIGS. 19A and 19B show schematic views of a connection structure before and after curing in a light-emitting device disclosed according to FIGS. 18A to 18D. FIG. 19C shows a top view of a light-emitting device disclosed according to FIG. 18D. FIG. 19D shows a top view of a light-emitting device disclosed according to FIG. 18F. 100C-2: Light-emitting element 1241C-2: Contact electrode 322: Insulating layer 324: Conductive region 444A: Electrical connection part 4441A: Upper part 4442A: Lower part 4443A: Neck 443b: Protection part A1, A2: Area T2: Thickness
Claims
1. A display device, comprising: a light-emitting device, serving as a pixel of the display device, the light-emitting device comprising: a carrier plate including a conductive region having an outer surface; a light-emitting element including a first light-emitting layer capable of emitting a first light and a first contact electrode formed beneath the first light-emitting layer, wherein the first contact electrode corresponds to the conductive region; and a connection structure including a first electrical connection portion and a protective portion, the protective portion surrounding the first contact electrode and the first electrical connection portion, and the first electrical connection portion electrically connecting the conductive region and the first contact electrode and directly contacting the outer surface; wherein... The first electrical connection includes an upper portion and a lower portion, both of which contain gold, and the atomic percentage of gold in the upper portion is greater than that in the lower portion.
2. The display device as claimed in claim 1, wherein, The lower portion protrudes beyond the upper portion, and the lower portion covers the outer surface.
3. The display device as claimed in claim 1, wherein, The first electrical connection portion has a first edge with a first thickness and a second edge with a second thickness, wherein the first thickness is greater than the second thickness.
4. The display device as claimed in claim 1, wherein, The first electrical connection portion has a first edge and a second edge opposite to the first edge, the first edge having a neck located between the upper portion and the lower portion, and the second edge not having a neck.
5. The display device as claimed in claim 1, wherein, The carrier plate includes an insulating layer and a light-absorbing layer, and the light-absorbing layer and the conductive area are located on the insulating layer.
6. A light-emitting device, comprising: a carrier plate including a conductive region having an outer surface; a light-emitting element including a lower surface, and a first contact electrode and a second contact electrode located on the lower surface; and a connecting structure including a first electrical connection portion, a second electrical connection portion, and a protective portion; wherein, The first electrical connection portion connects the first contact electrode and the conductive area and directly contacts the outer surface; the second electrical connection portion connects the second contact electrode and the conductive area; the protective portion surrounds the first contact electrode, the second contact electrode, the first electrical connection portion, and the second electrical connection portion; the protective portion and the lower surface have a contact surface, the maximum width of which is less than the maximum width of the light-emitting element.
7. The light-emitting device as claimed in claim 6, wherein, The light-emitting element includes an outermost surface, which is not covered by the protective portion.
8. The light-emitting device as claimed in claim 6, wherein, In a top view, the contact area between the connecting structure and the light-emitting element is smaller than the area of the light-emitting element.
9. The light-emitting device as claimed in claim 6, wherein, In a top view, the area of the first electrical connection portion is larger than the area of the first contact electrode.
10. The light-emitting device as claimed in claim 6, wherein, The protective section includes a portion of the space located between the light-emitting element, the first electrical connection, the second electrical connection, and the carrier plate.