High pressure gaseous hydrogen oxide providing device, and high pressure substrate processing apparatus and method using the same

Abstract

This invention discloses a high-pressure gaseous hydrogen peroxide supply device, and a high-pressure substrate processing device and method using the same. The high-pressure substrate processing method includes: a step of reacting hydrogen and oxygen; a step of obtaining generated hydrogen peroxide having a first pressure; a step of converting the generated hydrogen peroxide into processed gaseous hydrogen peroxide having a second pressure higher than the first pressure and atmospheric pressure; and a step of applying the processed gaseous hydrogen peroxide to the substrate to be processed in a processing chamber.

Description

High-pressure gaseous hydrogen oxide supply device, and high-pressure substrate processing device and method using the same The present invention relates to a high-pressure substrate processing device and method, and a high-pressure gaseous hydrogen oxide supply device used therein. During the manufacturing process of semiconductor devices, various processes are typically performed on the semiconductor substrate. Examples of these processes include oxidation, nitridation, ion implantation, and deposition. Hydrogen or deuterium heat treatments are also used to improve the interface properties of semiconductor devices. The manufacturing process can be roughly divided into vacuum process and high pressure process according to the gas pressure acting on the substrate. If the pressure of the former is lower than atmospheric pressure, the pressure of the latter is higher than atmospheric pressure. The two processes have different properties and characteristics, so what may not be a problem in one process may cause a significant problem in the other. For example, when using water vapor in wet oxidation, unlike in vacuum processes, impurities may become a significant problem in high-pressure processes. The aforementioned background technology is technical information that the inventor possesses or learns in the process of developing the embodiments of the present invention, and is not necessarily known technology disclosed to the general public before the present application. An object of the present invention is to provide a high-pressure gaseous hydrogen oxide supply device, a high-pressure substrate processing device and a method using the same, which can effectively remove impurities in a process using high-pressure gaseous hydrogen oxide, thereby preventing quality defects in substrates processed by the above process. Another object of the present invention is to provide a high-pressure gaseous hydrogen oxide supply device, a high-pressure substrate processing device and a method using the same, which can prevent the generation of unreacted gas or remove the unreacted gas during the generation of high-pressure gaseous hydrogen oxide, thereby preventing the explosion hazard caused by the same. To achieve the above-mentioned purpose, a high-pressure substrate processing method according to one aspect of the present invention may include: a step of reacting hydrogen and oxygen; a step of obtaining generated hydrogen oxide having a first pressure; a step of converting the generated hydrogen oxide into processed gaseous hydrogen oxide having a second pressure higher than the first pressure and atmospheric pressure; and a step of allowing the processed gaseous hydrogen oxide to act on a substrate to be processed in a processing chamber. Here, the step of converting the generated hydrogen oxide into treated gaseous hydrogen oxide having a second pressure higher than the first pressure and atmospheric pressure may include: injecting an auxiliary gas into the process chamber in addition to the gaseous hydrogen oxide obtained from the generated hydrogen oxide, so that the gaseous hydrogen oxide obtained from the generated hydrogen oxide in the process chamber reaches the second pressure. Here, the step of converting the generated hydrogen oxide into treated gaseous hydrogen oxide having a second pressure higher than the first pressure and atmospheric pressure may include: a step of obtaining liquid hydrogen oxide from the generated hydrogen oxide; a step of pressurizing the liquid hydrogen oxide; and a step of vaporizing the pressurized liquid hydrogen oxide to obtain the treated gaseous hydrogen oxide. According to another aspect of the present invention, a high-pressure substrate processing apparatus may include: an internal chamber configured to accommodate a processing gas containing processed gaseous hydrogen oxide and having a processing pressure higher than atmospheric pressure, and a substrate to be processed by the processing gas; an external chamber configured to accommodate the internal chamber and to accommodate a protective gas having a protective pressure set relative to the processing pressure; a generation module configured to react hydrogen with oxygen to produce generated hydrogen oxide, wherein the generation pressure of the generated hydrogen oxide is lower than the processing pressure; and a conversion module configured to pressurize the generated hydrogen oxide and convert it into the processed gaseous hydrogen oxide having the processing pressure. Here, the conversion module may include an auxiliary gas line, which injects auxiliary gas into the internal chamber in addition to the gaseous hydrogen oxide obtained from the generated hydrogen oxide, so that the gaseous hydrogen oxide obtained from the generated hydrogen oxide in the internal chamber reaches the processing pressure. Here, the conversion module may include a vaporization heater configured to vaporize liquid hydrogen oxide obtained from the generated hydrogen oxide to generate the treated gaseous hydrogen oxide. Here, either the generation module or the conversion module may further include a water tank, the water tank being formed to contain liquid hydrogen oxide obtained from the generation of hydrogen oxide and being in communication with the vaporization heater. Here, the conversion module may further include a pump, which is disposed between the water tank and the vaporization heater and is configured to pressurize the liquid hydrogen oxide obtained from the generated hydrogen oxide and pump the pressurized liquid hydrogen oxide to the internal chamber. Here, the conversion module may further include: a discharge line formed to discharge unreacted gas that has not participated in the reaction between the hydrogen and the oxygen from the water tank; and an injection line formed to inject a purge gas for purging the unreacted gas into the water tank. Here, it may be possible to further include a heating module disposed in the external chamber, for heating the processing gas to a processing temperature, and the vaporization heater is disposed in the external chamber. According to another aspect of the present invention, a high-pressure gaseous hydrogen oxide supply device for a high-pressure substrate processing apparatus may include: a generation module that reacts hydrogen with oxygen to produce generated hydrogen oxide, wherein the generation pressure of the generated hydrogen oxide is lower than the processing pressure of the substrate to be processed in the high-pressure substrate processing apparatus; and a conversion module that is configured to pressurize the generated hydrogen oxide and convert it into processed gaseous hydrogen oxide having the processing pressure, wherein the processing pressure is a pressure higher than atmospheric pressure. Here, the conversion module may include an auxiliary gas pipeline, which, in the high-pressure substrate processing apparatus, injects auxiliary gas into a processing chamber in which the substrate to be processed is arranged, in addition to the gaseous hydrogen oxide obtained from the generated hydrogen oxide, so that the gaseous hydrogen oxide obtained from the generated hydrogen oxide in the processing chamber reaches the processing pressure. Here, the conversion module may include a vaporization heater configured to vaporize the liquid hydrogen oxide obtained from the generated hydrogen oxide to generate the treated gaseous hydrogen oxide. Here, one of the generation module and the conversion module may further include a water tank, the water tank being formed to accommodate liquid hydrogen oxide obtained from the generation of hydrogen oxide and being in communication with the vaporization heater. Here, the conversion module may further include a pump, which is disposed between the water tank and the vaporization heater and is configured to pressurize the liquid hydrogen oxide obtained from the generated hydrogen oxide and pump the pressurized liquid hydrogen oxide to the internal chamber. Effects of the Invention According to the high-pressure gaseous hydrogen oxide supply apparatus of the present invention, as constructed as described above, and the high-pressure substrate processing apparatus and method using the same, after generating hydrogen oxide having a first pressure is obtained by reacting hydrogen and oxygen, the generated hydrogen oxide is converted into processing gaseous hydrogen oxide having a second pressure higher than the first pressure and atmospheric pressure, and then acts on the substrate to be processed in the processing chamber. Thus, the concern about impurities such as silicon dioxide contaminating the substrate during the high-pressure process can be eliminated. In addition, in the process of ensuring the treatment of gaseous hydrogen oxide, the generation of unreacted gas that does not participate in the reaction of hydrogen and oxygen can be prevented. Even if unreacted gas is generated, the risk of explosion caused by unreacted gas during the process can be prevented by removing the unreacted gas. Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention is not limited to the embodiments disclosed below and may be modified in various ways and implemented in various different forms. This embodiment is provided solely to complete the disclosure of the present invention and to fully inform a person of ordinary knowledge of the scope of the invention. Therefore, it should be understood that the present invention is not limited to the embodiments disclosed below and includes not only replacing or adding the structure of one embodiment with the structure of another embodiment, but also all modifications, equivalents, and even substitutes within the technical spirit and scope of the present invention. It should be understood that the drawings are intended only to facilitate understanding of the embodiments disclosed in this specification and are not intended to limit the technical spirit disclosed in this specification. All variations, equivalents, and even substitutes within the concept and technical scope of the present invention are encompassed by the drawings. The dimensions or thicknesses of components may be exaggerated or reduced in the drawings for ease of understanding, but this does not limit the scope of protection of the present invention. The terms used in this specification are used only to illustrate specific implementation examples or embodiments and are not intended to limit the present invention. In addition, unless otherwise specified in the context, singular expressions include plural expressions. The terms "including" and "consisting of" in the specification are used to specify the presence of features, digits, steps, operations, constituent elements, devices or combinations thereof recorded in the specification. That is, it should be understood that the terms "including" and "consisting of" in the specification do not exclude the presence or additional possibility of one or more other features or digits, steps, operations, constituent elements, devices or combinations thereof in advance. Terms including ordinal numbers such as "first" and "second" may be used to describe various components, but the components are not limited by these terms. These terms are used only to distinguish one component from other components. When a component is referred to as being “connected / in communication” or “in communication” with another component, it should be understood that it can be directly connected / in communication or in communication with the other component, or with other components intervening. Conversely, when a component is referred to as being “directly connected / in communication” or “directly in communication” with another component, it should be understood that no other components intervening are present. When it is mentioned that a certain component is “located above” or “below” another component, it should be understood that the component is not only directly above the other component but also that there may be other components in between. Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by persons of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with the context of the relevant art, and should not be construed as ideal or formal unless explicitly defined in this application. FIG. 1 is a conceptual diagram of a high-voltage substrate processing apparatus according to an embodiment of the present invention. 1 , a high-voltage substrate processing apparatus 100 may include an inner chamber 110 , an outer chamber 120 , an air intake module 130 , and an exhaust module 140 . The internal chamber 110 forms a processing chamber that accommodates substrates for processing. The internal chamber 110 can be made of non-metallic materials, such as quartz, to reduce contamination in the high-temperature and high-pressure operating environment. Although simplified in the figures, the lower end of the internal chamber 110 is equipped with an inner door (not shown) for opening the processing chamber. When the inner door is lowered, the processing chamber is opened, and the substrate can be placed into the processing chamber. By operating a heater (not shown) located outside the internal chamber 110, the temperature of the internal chamber 110 can reach hundreds to thousands of degrees Celsius. The substrate can be, for example, a wafer used in semiconductor manufacturing. The wafer can be made of materials such as Si, SiC, GaN, etc. The substrate is not limited to wafers; any infrastructure used in circuit manufacturing can be used. For example, the substrate can also include glass used in display manufacturing. The holder can be a boat that can stack multiple layers of substrates to be processed. The external chamber 120 is arranged to house the internal chamber 110. Unlike the internal chamber 110, the external chamber 120 is not susceptible to contamination of the substrate and can therefore be made of metal. The external chamber 120 is hollow and has a storage space for the internal chamber 110. The external chamber 120 also has an outer door (not shown) at its lower portion, which can be lowered along with the inner door to open the storage space. The internal chamber 110 can be placed in the external chamber 120. The gas supply module 130 is a structure for supplying gas to the inner chamber 110 and the outer chamber 120. The gas supply module 130 may include a gas supplier 131 connected to the public facilities (gas supply facilities) of the substrate processing factory. The gas supplier 131 may selectively supply hydrogen gas (H2) to the inner chamber 110. 2) Deuterium (D 2) Gaseous hydrogen oxide, fluorine (F 2) Ammonia (NH 3) Chlorine (Cl 2) Nitrogen (N 2) as a processing gas. The gaseous hydrogen oxide can be used for wet oxidation (Wet Oxidation), ALD (Atomic Layer Deposition), CVD (Chemical Vapor Deposition), and heat treatment (Annealing). The gas supplier 131 can provide nitrogen or argon (Ar), for example, as an inert gas, as a shielding gas to the external chamber 120. The processing gas and the shielding gas can be simply referred to as process gas. The process gas is supplied to the internal chamber 110 or the external chamber 120 via the processing gas pipeline 133 or the shielding gas pipeline 135, respectively. The shielding gas supplied to the external chamber 120 is specifically supplied to the space (shielded space) in the external chamber 120 other than the space occupied by the internal chamber 110. The process gas, at a pressure higher than atmospheric pressure (high pressure), can be supplied to chambers 110 and 120 to form a pressure of, for example, several to several tens of atmospheres. The pressure of the process gas, i.e., the process pressure, and the pressure of the shielding gas, i.e., the shielding pressure, can maintain a predetermined relationship. For example, the shielding pressure can be set to be approximately the same as or slightly higher than the process pressure. This pressure relationship provides the advantage of preventing the process gas from leaking from the internal chamber 110 and preventing the internal chamber 110 from breaking. The shielding pressure can also be set slightly lower than the process pressure, in which case similar effects as described above can be achieved. The exhaust module 140 is used to exhaust the process gas. To exhaust the process gas from the internal chamber 110, an exhaust pipe 141 is connected to the upper portion of the internal chamber 110. Similarly, to exhaust the shielding gas from the external chamber 120, an exhaust pipe 145 is connected to the external chamber 120. These exhaust pipes 141 and 145 are combined into one, so the process gas is diluted by the shielding gas during exhaust, resulting in a lower concentration. The control structure of the high-voltage substrate processing apparatus 100 will be described with reference to Fig. 2. Fig. 2 is a block diagram for describing the control structure of the high-voltage substrate processing apparatus of Fig. 1 . 2 (and FIG. 1 ), in addition to the aforementioned intake module 130 and exhaust module 140 , the high-voltage substrate processing apparatus 100 may further include a heating module 150 , a generating module 160 , a converting module 170 , a sensing module 180 , a control module 190 , and a storage module 195 . The heating module 150 includes the aforementioned heater, which may be disposed in the outer chamber 120 facing the inner chamber 110 . The generation module 160 is a structure for generating hydrogen oxide. Hydrogen oxide is a molecule composed of oxygen and hydrogen, which may include H 2O, H 2O 2. H 2O 3, etc. Since the hydrogen oxide is generated by generation module 160, it can be referred to as generated hydrogen oxide. The generated hydrogen oxide can be gaseous hydrogen oxide or liquid hydrogen oxide. The former can be referred to as generated gaseous hydrogen oxide, and the latter can be referred to as generated liquid hydrogen oxide. The generated hydrogen oxide has a generation pressure. The generation pressure can be greater than or equal to atmospheric pressure, specifically, several to several tens of atmospheric pressures. The generation pressure can be lower than the processing pressure. The conversion module 170 is a structure for converting the generated hydrogen oxide into gaseous hydrogen oxide (processed gaseous hydrogen oxide) that acts on the substrate in the process chamber. To this end, the conversion module 170 can pressurize the generated hydrogen oxide to increase the generated pressure to the processing pressure. The conversion module 170 and the generation module 160 may also be referred to as a high-pressure gaseous hydrogen oxide supplier because they operate in conjunction to supply high-pressure gaseous hydrogen oxide (the process gaseous hydrogen oxide) to the process chamber. The high-pressure gaseous hydrogen oxide supplier may operate in conjunction with the gas inlet module 130. Specifically, the high-pressure gaseous hydrogen oxide supplier may be installed in or in communication with the process gas pipeline 133. The sensing module 180 is configured to sense the environment of the chambers 110 and 120. The sensing module 180 may include a pressure gauge 181 and a thermometer 185. The pressure gauge 181 and the thermometer 185 may be installed in each chamber 110 and 120. The sensing module 180 may also include a gas detector (not shown) to sense specific gases. The control module 190 is a structure for controlling the intake module 130 and the exhaust module 140 . The control module 190 can control the operation of the intake module 130 and the like based on the sensing result of the sensing module 180 . The storage module 195 is a structure for storing data, programs, etc. that the control module 190 can refer to for control. According to the above structure, the control module 190 can control the operation of the air intake module 130 and the high-pressure gaseous hydrogen oxide supply device based on the pressure of the chambers 110 and 120 obtained by the pressure gauge 181. According to the operation of the air intake module 130 and the high-pressure gaseous hydrogen oxide supply device, the process gas can fill the process chamber at the process pressure. The protective space can be filled with the protective gas at the protective pressure. The control module 190 may also control the operation of the exhaust module 140 based on the pressure in the chambers 110 and 120 obtained by the pressure gauge 181. According to the operation of the exhaust module 140, the process gas may be exhausted from the process chamber and the protective gas may be exhausted from the protective space. The control module 190 may control the operation of the heating module 150 based on the temperature of the chambers 110 and 120 obtained by the thermometer 185. According to the operation of the heating module 150, the process gas may reach a process temperature for processing the substrate. 3 to 6, the specific structures of the generating module 160 and the converting module 170 are described. 2O is used as an example to illustrate the hydrogen oxidation, but this description is also applicable to H 2O 2 etc. The gaseous state of 2O is water vapor, and the liquid state is water. Therefore, the generated gaseous hydrogen oxide can be referred to as generated water vapor, and the generated liquid hydrogen oxide can be referred to as generated water. First, FIG3 is a conceptual diagram showing the generation module of FIG2 . 3, the generation module 160 is configured to use gas as a starting material to generate gaseous hydrogen oxide (water vapor). The method of using gas is different from the method of using liquid hydrogen oxide (water) as a starting material to obtain water vapor. By adopting the method of using gas, the inventors confirmed that the generation of H 2O does not contain impurities (silicon dioxide). The generating module 160 may specifically include a housing 161 , input units 162 and 163 , a reaction unit 165 , a sensing unit 166 , an ejection unit 167 , and a guide line 169 . The housing 161 has an internal space that accommodates the reaction unit 165, described later, and other components. The housing 161 can be sealed to prevent gas leakage. Gas leaking from the reaction unit 165, etc. within the housing 161 can be detected by a sensor (not shown) and pumped to the exterior of the housing 161 before being exhausted. The internal space of the housing 161 can be filled with an inert gas, such as nitrogen, or purged with nitrogen. The input parts 162 and 163 are structures for receiving gas from the gas supplier 131 (see FIG1 ). One of the input parts 162 and 163 inputs oxygen (O 2) Input hydrogen H at another input portion 163. 2. As needed, other substances besides the oxygen and hydrogen may be fed into the input sections 162 and 163. The pipeline supplying the hydrogen to the other input section 163 may be formed as a double pipe. The hydrogen flows through the inner tube of the double pipe, and a sensor (not shown) for detecting hydrogen leaks may be installed externally. When a hydrogen leak occurs, the hydrogen may be discharged from the internal space of the exterior. The device for discharging the hydrogen may be filled with an inert gas, for example, for explosion protection. The hydrogen leak may be linked to an interlock of the high-voltage substrate processing apparatus 100. The reaction unit 165 is used to react the oxygen and the hydrogen to generate the H The reaction section 165 can maintain a temperature and pressure suitable for the reaction. The sensing unit 166 is used to obtain the generated H 2O-related information. For example, sensing unit 166 can be used to sense the temperature and pressure of the generated hydrogen oxide. Sensing unit 166 can also sense unreacted gas (NG, see Figure 5). Unreacted gas (NG) refers to gas that does not participate in the reaction between the oxygen and hydrogen. Hydrogen, as unreacted gas (NG), is explosive and may require management. The discharge portion 167 is a structure for discharging the discharge material. The present inventors have confirmed that under a pressure lower than the reference pressure, the discharge material is mainly the generated H 2O. The present inventors have also confirmed that when the reference pressure is above the reference pressure, unreacted gas (NG) may be slightly mixed into the ejected product. The reference pressure may be several atmospheres. The ejected product may be the generated H 2O and unreacted gas (NG) are mixed. H 2O phase, the spitted matter may be gas or a mixture of gas and liquid. The guide line 169 is to generate H 2O is directed to the structure of the internal chamber 110. The guide line 169 may be the aforementioned process gas line 133 (see FIG. 1 ) or form a portion thereof. When only gas (exhaled gas) is exhaled as the exhaled substance, the conversion module 170 (see FIG. 2 ) may have an auxiliary gas pipeline (not shown) for injecting auxiliary gas into the internal chamber 110 . The auxiliary gas is injected into the internal chamber 110 to increase the generated H 20, specifically the pressure of the generated water vapor, and can form a part of the processing gas. The auxiliary gas can be an inert gas, such as nitrogen. The auxiliary gas line can receive the auxiliary gas from the gas supplier 131 (see FIG1 ). The auxiliary gas line is connected to the guide line 169 at the rear end of the housing 161 and can supply the auxiliary gas to the internal chamber 110 through the guide line 169. In an alternative embodiment, the auxiliary gas line can be configured to mix the auxiliary gas into the oxygen, hydrogen, or H generated gas within the housing 161. 2O. According to this configuration, when the generation module 160 operates below the reference pressure, the output consists essentially solely of the generated water vapor, with virtually no unreacted gas (NG) present. Because the presence of NG in this output is not a concern, the generated water vapor can be directly supplied to the internal chamber 110 without requiring any additional processing. However, because the generation pressure is lower than the process pressure, the auxiliary gas can pressurize the generated water vapor and convert it into process water vapor. In an alternative embodiment, the generated water vapor (which contains little unreacted gas (NG)) can be compressed by a compressor (not shown) before being injected into the internal chamber 110. In this case, the generated water vapor can be pressurized to the processing pressure to become the process water vapor. The process water vapor can act on the substrate at the processing pressure without the assistance of the assist gas. Different from the above, when the generating module 160 operates above the reference pressure, the output may include the generated H 2O and unreacted gas (NG). In this case, it is necessary to remove the unreacted gas (NG), and for this purpose, a new conversion module 170A can be used. Next, Figure 4 is a block diagram showing a generation module and a conversion module according to another embodiment of the present invention. In Figure 4, the generation module 160 is the same as that in the previous embodiment and is therefore simply represented as a box in the figure. 4, the conversion module 170A is a structure that converts the generated H2O into the treated water vapor and can also remove the unreacted gas (NG) during the conversion process. To this end, the conversion module 170A can use the generated H 2O (specifically, the generated water vapor) undergoes phase inversion. The conversion module 170A may include a water tank 171 , a pump 175 , and a vaporization heater 179 . The water tank 171 is a structure for containing the resultant product produced after the spitting material is liquefied. When the water tank 171 is placed in a room temperature environment, the spitting material can be liquefied in the water tank 171 without the need for additional cooling equipment. The resultant product includes condensed water (CW, see Figure 5) produced by the liquefaction of the generated water vapor. The condensed water (condensed liquid hydrogen oxide) and the generated water (generated liquid hydrogen oxide) can be collectively referred to as the product from the generated H 2O (generated hydrogen oxide) to obtain water (liquid hydrogen oxide). The resultant may also include unreacted gas (NG). The specific structure of the water tank 171 will be described with reference to FIG5 . Referring again to the drawings, pump 175 is a structure for pumping condensed water (CW). Condensed water (CW) can be pumped into the processing chamber. Condensed water (CW) can also be pumped after being pressurized to several or several tens of atmospheres. Pump 175 can be positioned between water tank 171 and vaporization heater 179. The vaporization heater 179 is a structure that vaporizes the condensed water (CW) to generate water vapor (harvested water vapor). To this end, the vaporization heater 179 heats the condensed water (CW). The harvested water vapor can be supplied to the processing chamber along the guide line 169 to become the processed water vapor. The harvested water vapor can be further pressurized or mixed with the auxiliary gas to become the processed water vapor. The harvested water vapor and the generated water vapor can be referred to as the generated H 2O (generating hydrogen oxide) to obtain water vapor (gaseous hydrogen oxide). The vaporization heater 179 can be disposed outside the external chamber 120 (see FIG. 1 ). In an alternative embodiment, the vaporization heater 179 can be located inside the external chamber 120, i.e., within the protective space. In this case, the vaporization heater 179 is placed in an environment with a higher temperature than that outside the external chamber 120, and therefore can operate while consuming less energy. In another alternative embodiment, the vaporization heater 179 is mounted on the main body of the internal chamber 110 (e.g., the inner door), and the condensed water (CW) can also be vaporized by the vaporization heater 179 as it flows through the main body into the processing chamber. FIG. 5 is a cross-sectional view illustrating the water tank of FIG. 4 . Referring to Figure 5 , the water tank 171 may include a housing 172 defining an interior space. The discharged material is liquefied and separated into condensed water (CW) and unreacted gas (NG), which are then contained within the interior space. Specifically, the condensed water (CW) may be located in the lower portion of the interior space, while the unreacted gas (NG) may be located in the upper portion. Since the unreacted gas (NG) and condensed water (CW) are separated from each other, they occupy different spaces. The discharged material can be discharged to the housing 172 through the discharge line 173a. The condensed water (CW) can be sucked into the pump 175 through the suction line 173b. One end of the suction line 173b is connected to the pump 175, and the other end is the suction port 173b. Since the suction port 173 b ′ is disposed in the condensed water (CW), the unreacted gas (NG) is not sucked into the pump 175 through the suction line 173 b . Condensed water (CW) is supplied to the internal chamber 110 through the pump 175 and the vaporization heater 179, but unreacted gas (NG) is separated from the condensed water (CW) and is not supplied to the internal chamber 110. The unreacted gas (NG) can be discharged to the outside of the internal space through the exhaust line 174a. To more actively separate and remove unreacted gas (NG) from condensed water (CW), a purge gas may be injected into the interior space via injection line 174b. Since the purge gas purges the unreacted gas (NG) from the interior space, the unreacted gas (NG) can be more smoothly discharged via exhaust line 174a. The purge gas may be, for example, nitrogen, i.e., an inert gas. FIG. 6 is a conceptual diagram illustrating a generation module and a conversion module according to another embodiment of the present invention. 6, the generating module 160' is substantially the same as the generating module 160 (see FIG4), but differs in that it has a water tank 168'. When 2O is the produced water, the water tank 168' can contain the produced water (and the unreacted gas). The water tank 168' can have a structure substantially the same as that of the aforementioned water tank 171 (see FIG5 ). The conversion module 170B is substantially the same as the aforementioned conversion module 170A, but differs in that it does not have the water tank 171 . Depending on the configuration, the discharged product may contain only the generated water, or may contain the generated water and the unreacted gas. As described above, the generated water and the unreacted gas can be separated in the water tank 168'. Pump 175 can pressurize the generated water from the water tank 168' and pump it to the vaporization heater 179. The unreacted gas can also be purged from the water tank 168'. Next, a high voltage substrate processing method will be described with reference to FIG. 7 to FIG. 9 (as well as FIG. 1 to FIG. 6 ). FIG. 7 is a flow chart illustrating a high voltage substrate processing method according to another embodiment of the present invention. 7 , the control module 190 controls the generation module 160 to react hydrogen and oxygen ( S1 ). The generation module 160 discharges a discharge generated by the reaction between the hydrogen gas and the oxygen gas. The discharge includes H having a first pressure (generation pressure). 2O (S3). The control module 190 controls the conversion module 170 to generate H 2O is converted into processing water vapor with a second pressure (processing pressure) (S5). Specifically, the control module 190 can control the conversion module 170 to inject the generated H 2O (specifically, the generated water vapor), the auxiliary gas may also be injected. The auxiliary gas and the generated water vapor together bring the processing chamber to the second pressure (first conversion mode). The second pressure is a pressure higher than the first pressure and atmospheric pressure, for example, from several atmospheres to tens of atmospheres. The treatment water vapor acts on the substrate in the treatment chamber (S7), and the substrate is subjected to wet oxidation, heat treatment, etc. by the action of the treatment water vapor. FIG. 8 is a flowchart showing a specific example of processing associated with one step in FIG. 6 . With further reference to FIG. 8 , unlike the above, the step of converting into the treated water vapor ( S5 ) may be performed using phase change. Specifically, when the discharged gas is liquefied, condensed water (CW) is obtained in the water tank 171 ( S11 ). The control module 190 determines whether the condensed water (CW) needs to be pressurized ( S13 ). This determination may vary depending on the pressure of the condensed water (CW). When pressurization is required, the control module 190 controls the pump 175 to pressurize the condensed water (CW) ( S15 ). The pressurization of the condensed water (CW) may be performed before the condensed water (CW) is vaporized. The control module 190 further controls the vaporization heater 179 to heat the condensed water (CW) ( S17 ). The heated condensed water (CW) may be converted into the process steam having the second pressure (second reforming mode). In an alternative embodiment, if the generated H 2O is the generated water, the generated water may be pressurized instead of being condensed ( S13 and S15 ) and vaporized ( S17 ). FIG. 9 is a flowchart showing another specific processing example associated with a step in FIG. 6 . 9 , in the step ( S5 ) of converting the gas into the treated water vapor, unreacted gas (NG) is also removed. Specifically, when the mixture is accommodated in the water tanks 168 ′, 171 , unreacted gas (NG) may be separated from the produced water or condensed water (CW) ( S21 ). The control module 190 determines whether the unreacted gas (NG) needs to be removed based on the amount of the unreacted gas (NG) ( S23 ). When the unreacted gas (NG) is greater than the reference amount, the control module 190 determines that the unreacted gas needs to be removed. To actively remove unreacted gas (NG), control module 190 can control air intake module 130 to inject the purge gas into water tanks 168' and 171 (S25). This allows unreacted gas (NG) to be exhausted from water tanks 168' and 171 to the outside. This ensures that unreacted gas (NG) is not injected into the processing chamber. In this specification, a high-pressure substrate processing apparatus 100 is described using a dual-chamber processing apparatus. However, the present invention is not limited thereto. The high-pressure gaseous hydrogen oxide supply apparatus can also be applied to a processing apparatus having a single chamber. The single chamber consists of a housing and a door. A wafer substrate is placed within the chamber, and gas for processing the wafer substrate is supplied. The structure of the high-voltage substrate processing apparatus 100 can also be applied to a semi-dual chamber, which is an intermediate form between the dual chamber and the single chamber. The semi-dual chamber can have two shells (an inner shell and an outer shell) and a door. The two shells can be combined according to their own shapes or with other intervening components to form a closed space (corresponding to the protective space). Similar to the aforementioned embodiment, the substrate can be placed in the processing chamber of the inner shell and the processing gas can be injected, and the protective gas can be injected into the closed space. Unlike the aforementioned embodiment, the door is not completely protected by the protective gas and leaks to the outside. The door can correspond to the aforementioned external door. The door can be used to open and close the inner shell (and the outer shell). In this specification, a batch type processing apparatus is used as an example, but the present invention is not limited thereto and can also be applied to a single wafer type processing apparatus. The above description is for illustrative purposes only and is not intended to be limiting. Any equivalent modifications or variations that do not depart from the spirit and scope of the present invention should be included in the scope of the appended patent applications. 100: High-voltage substrate processing apparatus 110: Internal chamber 120: External chamber 130: Intake module 131: Gas supply 133: Processing gas pipeline 135: Shielding gas pipeline 140: Exhaust modules 141, 145: Exhaust pipe 150: Heating module 160, 160': Generating module 161, 172: Housing 162, 163: Input unit 165: Reactor 166: Sensor 167: Discharge unit 168', 171: Water tank 169: Guide pipeline 17 0, 170A, 170B: conversion module 173a: discharge line 173b: suction line 173b': suction port 174a: discharge line 174b: injection line 175: pump 179: vaporization heater 180: sensing module 181: pressure gauge 185: thermometer 190: control module 195: storage module CW: condensed water NG: unreacted gas S1, S11, S13, S15, S17, S21, S23, S25, S3, S5, S7: steps FIG1 is a conceptual diagram of a high-voltage substrate processing apparatus according to an embodiment of the present invention. FIG2 is a block diagram for illustrating a control structure of the high-voltage substrate processing apparatus of FIG1 . FIG3 is a conceptual diagram of a generation module of FIG2 . FIG4 is a conceptual diagram showing a generation module and a conversion module according to another embodiment of the present invention. FIG5 is a cross-sectional view of a water tank of FIG4 . FIG6 is a conceptual diagram showing a generation module and a conversion module according to another embodiment of the present invention. FIG7 is a flowchart showing a high-voltage substrate processing method according to yet another embodiment of the present invention. FIG8 is a flowchart showing a specific processing example associated with a step in FIG6 . FIG9 is a flowchart showing another specific processing example associated with a step in FIG6 . 100: High-voltage substrate processing equipment 130:Intake module 140: Exhaust module 150: Heating module 160:Generate module 170:Conversion Module 180:Sensor module 181: Pressure gauge 185:Thermometer 190: Control Module 195: Storage Module

Claims

1. A method for processing a high-voltage substrate, wherein, include: The steps that allow hydrogen and oxygen to react; The step of generating hydrogen oxide under a first pressure; The steps of converting the generated hydrogen peroxide into a processed gaseous hydrogen peroxide having a second pressure higher than the first pressure and atmospheric pressure; and the steps of applying the processed gaseous hydrogen peroxide to the substrate to be processed in the processing chamber.

2. The high-voltage substrate processing method as described in claim 1, wherein, The step of converting the generated hydrogen peroxide into processed gaseous hydrogen peroxide having a second pressure higher than the first pressure and atmospheric pressure includes: injecting an auxiliary gas into the processing chamber in addition to the gaseous hydrogen peroxide obtained from the generated hydrogen peroxide, such that the gaseous hydrogen peroxide obtained from the generated hydrogen peroxide in the processing chamber reaches the second pressure.

3. The high-voltage substrate processing method as described in claim 1, wherein, The step of converting the generated hydrogen peroxide into processed gaseous hydrogen peroxide having a second pressure higher than the first pressure and atmospheric pressure includes: obtaining liquid hydrogen peroxide from the generated hydrogen peroxide; pressurizing the liquid hydrogen peroxide; and vaporizing the pressurized liquid hydrogen peroxide to obtain the processed gaseous hydrogen peroxide.

4. A high-voltage substrate processing apparatus, wherein, include: An internal chamber is formed to contain a substrate containing a processing gas of gaseous hydrogen peroxide at a processing pressure higher than atmospheric pressure, and a processing object containing the processing gas; an external chamber is formed to contain the internal chamber and to contain a protective gas having a protective pressure set relative to the processing pressure; a generation module is formed to react hydrogen with oxygen to generate hydrogen peroxide at a generation pressure lower than the processing pressure; and a conversion module is formed to pressurize the generated hydrogen peroxide and convert it into the gaseous hydrogen peroxide having the processing pressure.

5. The high-voltage substrate processing apparatus as described in claim 4, wherein, The conversion module includes an auxiliary gas pipeline that injects auxiliary gas into the internal chamber in addition to the gaseous hydrogen oxide obtained from the generated hydrogen oxide, thereby causing the gaseous hydrogen oxide obtained from the generated hydrogen oxide in the internal chamber to reach the processing pressure.

6. The high-voltage substrate processing apparatus as described in claim 4, wherein, The conversion module includes a vaporization heater configured to vaporize the liquid hydrogen oxide obtained from the generated hydrogen oxide to produce the processed gaseous hydrogen oxide.

7. The high-voltage substrate processing apparatus as described in claim 6, wherein, Either the generating module or the conversion module further includes a water tank configured to contain liquid hydrogen oxide obtained from the generated hydrogen oxide and connected to the vaporization heater.

8. The high-voltage substrate processing apparatus as described in claim 7, wherein, The conversion module also includes a pump disposed between the water tank and the vaporization heater, configured to pressurize and pump the liquid hydrogen oxide obtained from the generated hydrogen oxide into the internal chamber.

9. The high-voltage substrate processing apparatus as described in claim 7, wherein, The conversion module further includes: a discharge line configured to discharge unreacted gas that did not participate in the reaction between the hydrogen and the oxygen from the water tank; and an injection line configured to inject purge gas for purging the unreacted gas into the water tank.

10. The high-voltage substrate processing apparatus as claimed in claim 6, wherein, It also includes a heating module disposed in the outer chamber for heating the processing gas to the processing temperature, the vaporization heater being disposed in the outer chamber.

11. A high-pressure gaseous hydrogen peroxide supply device for a high-pressure substrate processing apparatus, wherein, include: A generation module reacts hydrogen with oxygen to produce hydrogen oxide, wherein the generation pressure of the hydrogen oxide is lower than the processing pressure of the substrate to be processed in the high-voltage substrate processing apparatus; and a conversion module is configured to pressurize the generated hydrogen oxide and convert it into gaseous hydrogen oxide having the processing pressure; wherein the processing pressure is a pressure higher than atmospheric pressure.

12. The high-pressure gaseous hydrogen peroxide supply apparatus for a high-voltage substrate processing apparatus as described in claim 11, wherein, The conversion module includes an auxiliary gas pipeline that, in the high-voltage substrate processing apparatus, injects auxiliary gas into the processing chamber where the substrate to be processed is disposed, in addition to the gaseous hydrogen oxide obtained from the generated hydrogen oxide, thereby causing the gaseous hydrogen oxide obtained from the generated hydrogen oxide in the processing chamber to reach the processing pressure.

13. The high-pressure gaseous hydrogen peroxide supply apparatus for a high-voltage substrate processing apparatus as described in claim 11, wherein, The conversion module includes a vaporization heater configured to vaporize the liquid hydrogen oxide obtained from the generated hydrogen oxide to produce the processed gaseous hydrogen oxide.

14. The high-pressure gaseous hydrogen peroxide supply apparatus for a high-pressure substrate processing apparatus as described in claim 13, wherein, One of the generating module and the conversion module further includes a water tank configured to contain liquid hydrogen oxide obtained from the generated hydrogen oxide and connected to the vaporization heater.

15. The high-pressure gaseous hydrogen peroxide supply apparatus for a high-voltage substrate processing apparatus as described in claim 14, wherein, The conversion module also includes a pump disposed between the water tank and the vaporization heater, configured to pressurize and pump the liquid hydrogen oxide obtained from the generated hydrogen oxide to the processing area in the high-pressure substrate processing device where the substrate to be processed is placed.

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