Semiconductor thermal processing equipment and temperature control method thereof

Abstract

This application provides a semiconductor heat treatment apparatus and a temperature control method thereof. The apparatus includes: a coil, a chamber, a first temperature sensor, a second temperature sensor, and a temperature controller. The coil is arranged around the chamber and provides a thermal field for the chamber. The chamber has a first temperature measuring hole and a second temperature measuring hole distributed in the central region of the chamber. The first temperature sensor is used to detect the temperature of the chamber through the first temperature measuring hole and is denoted as the first temperature. The second temperature sensor is used to detect the temperature of the chamber through the second temperature measuring hole and is denoted as the second temperature. The temperature controller is used to acquire the first temperature and the second temperature. When the temperature of the chamber reaches a steady state, it determines whether the center position of the coil deviates from the center point of the chamber based on the first temperature and / or the second temperature.

Description

A semiconductor heat treatment device and its temperature control method This application relates to the field of semiconductor technology, and in particular, to a semiconductor heat treatment device and its temperature control method. Epitaxial growth refers to growing a specific epitaxial thin film on the basis of a wafer through an epitaxial process. The wafer and the epitaxial thin film are collectively called an epitaxial wafer. Currently, the chemical vapor deposition (CVD) method is mainly used for the epitaxial layer growth of silicon carbide. The specific chemical reaction is SiH 4 With C 3 H 8 (C 2 H 4 ) undergoes a cracking reaction at high temperature (above 1600 degrees Celsius) and reduced pressure (about 100 mbar) to generate Si atoms and C atoms, and then recombines on the wafer surface to form SiC. The thermal chemical distillation method is widely used in the growth of epitaxial layers. Temperature is an important influencing factor, which has an important impact on its doping uniformity and film thickness uniformity. If the temperature deviates from the set process temperature, it will have a great negative impact on the process parameters. However, in the related semiconductor devices, it is impossible to ensure that the wafer is at the highest temperature in the chamber during the process, and thus it is impossible to ensure the temperature uniformity of the wafer. In view of this, the purpose of this application is to provide a semiconductor heat treatment device and its temperature control method, which can ensure that the center of the wafer coincides with the center of the coil during the process, so that the wafer is always at the highest temperature point, ensuring the temperature uniformity of the wafer area. In order to achieve the above purpose, the technical solutions adopted in the embodiments of this application are as follows: In a first aspect, an embodiment of the present application provides a semiconductor heat treatment apparatus, including: a coil, a chamber, a first temperature sensor, a second temperature sensor, and a temperature controller; the chamber is used to place a wafer to be processed, the coil is arranged around the chamber and provides a heat field for the chamber, a first temperature measurement hole and a second temperature measurement hole are arranged on the chamber, and the first temperature measurement hole and the second temperature measurement hole are distributed in the central area of the chamber; the first temperature sensor is used to detect the temperature of the chamber through the first temperature measurement hole, denoted as the first temperature; the second temperature sensor is used to detect the temperature of the chamber through the second temperature measurement hole, denoted as the second temperature; the temperature controller is used to obtain the first temperature and the second temperature, and when the temperature of the chamber reaches a steady state, based on the first temperature and / or the second temperature, determine whether the central position of the coil deviates from the center point of the chamber. If so, control the coil to translate along the central axis based on the first temperature and / or the second temperature until the central position of the coil reaches the center point of the chamber. Further, the temperature controller is further used to determine whether the first temperature is equal to the second temperature. If the first temperature is not equal to the second temperature, determine that the central position of the coil deviates from the center point of the chamber; control the coil to translate along the central axis based on the first temperature and the second temperature until the first temperature is equal to the second temperature, and determine that the central position of the coil reaches the center point of the chamber. Further, the chamber includes multiple regions, and the number of coil turns in each region is the same. A temperature gradient distribution curve when the temperature of the chamber reaches a steady state is stored in the temperature controller, and the temperature gradient distribution curve is the chamber temperature corresponding to each region; the temperature controller is further used to obtain the region where the first temperature measurement hole on the chamber is located, denoted as the first setting region; determine the chamber temperature corresponding to the first setting region in the temperature gradient distribution curve, denoted as the first target temperature; determine whether the first temperature is equal to the first target temperature. If the first temperature is not equal to the first target temperature, determine that the central position of the coil deviates from the center point of the chamber; and / or, the temperature controller is further used to obtain the region where the second temperature measurement hole on the chamber is located, denoted as the second setting region; determine the chamber temperature corresponding to the second setting region in the temperature gradient distribution curve, denoted as the second target temperature; determine whether the second temperature is equal to the second target temperature. If the second temperature is not equal to the second target temperature, determine that the central position of the coil deviates from the center point of the chamber. Further, the semiconductor heat treatment equipment further includes: a driving member, the driving member is connected to the coil, and the driving member is used to drive the coil to translate; the temperature controller is further used to calculate the translation amount and translation direction of the coil based on the first target temperature and the first temperature; control the driving member to drive the coil to translate based on the translation amount and translation direction until the center point of the coil coincides with the center point of the chamber; and / or, the temperature controller is further used to calculate the translation amount and translation direction of the coil based on the second target temperature and the second temperature; control the driving member to drive the coil to translate based on the translation amount and translation direction until the center point of the coil coincides with the center point of the chamber. Further, the temperature controller is a programmable logic controller, and the programmable logic controller is respectively in communication connection with the first temperature sensor, the second temperature sensor and the induction power supply of the coil. In a second aspect, an embodiment of the present application provides a temperature control method for a semiconductor heat treatment equipment, which is applied to the semiconductor heat treatment equipment described in the first aspect. The temperature control method includes: obtaining the first temperature detected by the first temperature sensor, and obtaining the second temperature detected by the second temperature sensor; when the temperature of the chamber reaches a steady state, judging whether the center position of the coil deviates from the center point of the chamber based on the first temperature and / or the second temperature; if so, controlling the coil to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber. Further, judging whether the center position of the coil deviates from the center point of the chamber based on the first temperature and / or the second temperature includes: judging whether the first temperature is equal to the second temperature. If the first temperature is not equal to the second temperature, it is determined that the center position of the coil deviates from the center point of the chamber; and / or, controlling the coil to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber includes: when the first temperature is greater than the second temperature, controlling the coil to translate in a first direction until the first temperature is equal to the second temperature; wherein, the first direction is the direction where the second temperature measuring hole is located; when the first temperature is less than the second temperature, controlling the coil to translate in a second direction until the first temperature is equal to the second temperature; wherein, the second direction is the direction where the first temperature measuring hole is located. Further, the temperature control method further includes: calculating the skin depth of the chamber at a preset process temperature, obtaining the alternating current value of the coil, dividing the chamber into multiple regions based on the number of turns of the coil, and calculating the heat source intensity of each region in the chamber based on the skin depth and the alternating current value; wherein, the number of turns of the coil in each region is the same; obtaining the ambient temperature at both ends of the chamber when the temperature of the chamber reaches a steady state, and calculating the chamber temperature of each region based on the ambient temperature and the heat source intensity of each region to obtain the temperature gradient distribution curve of the chamber. Further, the calculating the chamber temperature of each region based on the ambient temperature and the heat source intensity of each region includes: starting from the first region at any end of the chamber, calculating the chamber temperature of the first region at the steady state of the process based on the heat source intensity of the first region and the ambient temperature; taking the chamber temperature of the first region as the ambient temperature of the next adjacent region, and calculating the chamber temperature of the next region at the steady state of the process based on the ambient temperature of the next region and the heat source intensity of the next region until the chamber temperature of the region where the center point of the chamber is located is calculated; and obtaining the chamber temperature of each region from the region where the center point of the chamber is located to the other end of the chamber based on the symmetry of the chamber temperatures of each region from the first region to the region where the center point of the chamber is located. Further, the calculation formula for the chamber temperature is: Wherein, is the chamber temperature of the i-th region, is the heat source intensity of the i-th region, is the Stokes constant, is the surface heat emissivity of the chamber, is the inner surface area of the chamber, is the ambient temperature corresponding to the i-th region, is the volume of the i-th region. Further, determining whether the center position of the coil deviates from the center point of the chamber based on the first temperature and / or the second temperature includes: obtaining the area where the first temperature measurement hole is located on the chamber, denoted as the first setting area; determining the chamber temperature corresponding to the first setting area in the temperature gradient distribution curve, denoted as the first target temperature; determining whether the first temperature is equal to the first target temperature, and if the first temperature is not equal to the first target temperature, determining that the center position of the coil deviates from the center point of the chamber; and / or, obtaining the area where the second temperature measurement hole is located on the chamber, denoted as the second setting area; determining the chamber temperature corresponding to the second setting area in the temperature gradient distribution curve, denoted as the second target temperature; determining whether the second temperature is equal to the second target temperature, and if the second temperature is not equal to the second target temperature, determining that the center position of the coil deviates from the center point of the chamber. Further, the semiconductor heat treatment equipment further includes a driving member, the driving member is connected to the coil, and the driving member is used to drive the coil to translate; controlling the coil to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber includes: calculating the translation amount and translation direction of the coil based on the first target temperature and the first temperature; controlling the driving member to rotate based on the translation amount and translation direction to drive the coil to translate until the center position of the coil coincides with the center point of the chamber; and / or, calculating the translation amount and translation direction of the coil based on the second target temperature and the second temperature; controlling the driving member to rotate based on the translation amount and translation direction to drive the coil to translate until the center position of the coil coincides with the center point of the chamber. Embodiments of the present application provide a semiconductor heat treatment apparatus and its temperature control method. The semiconductor heat treatment apparatus includes: a coil, a chamber, a first temperature sensor, a second temperature sensor, and a temperature controller; the chamber is used to place the wafer to be processed, the coil is arranged around the chamber and provides a heat field for the chamber, the chamber is provided with a first temperature measurement hole and a second temperature measurement hole, and the first temperature measurement hole and the second temperature measurement hole are distributed in the central area of the chamber; the first temperature sensor is used to detect the temperature of the chamber through the first temperature measurement hole, denoted as the first temperature; the second temperature sensor is used to detect the temperature of the chamber through the second temperature measurement hole, denoted as the second temperature; the temperature controller is used to obtain the first temperature and the second temperature. When the temperature of the chamber reaches a steady state, it determines whether the central position of the coil deviates from the center point of the chamber based on the first temperature and / or the second temperature. If so, it controls the coil to translate along the central axis based on the first temperature and / or the second temperature until the central position of the coil reaches the center point of the chamber. By providing two temperature sensors on the chamber in the present application and determining whether the central position of the coil deviates from the center point of the chamber based on the first temperature detected by the first temperature sensor and / or the second temperature detected by the second temperature sensor when the temperature of the chamber reaches a steady state, it can be determined whether the center point of the wafer is located at the highest temperature point. By moving the coil when the wafer deviates from the central position of the coil to make the central position of the coil reach the center point of the chamber, it is ensured that the center of the wafer coincides with the center of the coil during the process, so that the wafer is always at the highest temperature point, ensuring the uniformity of the wafer temperature. Other features and advantages of the embodiments of the present application will be described in the subsequent description. Alternatively, some features and advantages can be inferred from the description or determined without doubt, or can be known by implementing the above technologies of the embodiments of the present application. To make the above objects, features, and advantages of the present application more obvious and understandable, the following preferred embodiments are specifically described below in conjunction with the accompanying drawings. To make the objects, technical solutions, and advantages of the embodiments of the present application clearer, the technical solutions of the present application will be described below in conjunction with the drawings. Obviously, the described embodiments are some embodiments of the present application, rather than all embodiments. In related wafer heating technologies, induction heating is usually used as the main heating method for silicon carbide epitaxy. This method has various advantages such as fast heating speed, high heating efficiency, fast startup, and energy saving, and is widely used in the semiconductor industry. During the silicon carbide epitaxy process, strict requirements are imposed on the uniformity and accuracy of the temperature near the substrate. The coil, as the medium for generating the magnetic field, directly affects the distribution of the heat field during the heating process. An alternating current is passed through the coil to generate a corresponding magnetic field and magnetic flux. A chamber placed inside the coil (such as a graphite piece which can be a hollow barrel-shaped structure) generates an induced electromotive force, causing eddy currents to flow through the chamber. A wafer position is reserved at the center of the chamber. The reaction gas flows horizontally through the chamber from one end of the coil and is pumped away from the other end, resulting in a lower ambient temperature in the horizontal direction near the edge region of the chamber. When the chamber is in a low-pressure vacuum state, according to the principle of thermal radiation, the temperatures on both sides of the coil are relatively low. When the wafer is at the center position of the coil, the highest point in the temperature field coincides with the center of the wafer. However, since the chamber inside the coil is installed in an incompletely fixed form inside the coil, in the case of manual installation and lack of reliable fixation, the wafer will deviate from the center of the coil. Therefore, in related semiconductor equipment, it is impossible to ensure that the wafer is at the highest temperature in the chamber during the manufacturing process, and thus it is impossible to ensure the uniformity of the wafer temperature. Refer to the schematic diagram of the chamber structure of a related semiconductor heat treatment equipment shown in Figure 1. The chamber is a graphite piece, and the graphite piece chamber is a hollow cylindrical structure, which is spliced by two semi-circular parts to form a complete cylindrical shape. A wafer placement position is reserved in the middle of the center line of the graphite piece. Since the current parallel gas inlet silicon carbide epitaxial equipment cannot directly measure the wafer temperature, an infrared thermometer indirectly measures the chamber temperature through the temperature measurement hole in Figure 1. The temperature measurement hole is usually directly above the wafer placement position, at the position of the temperature measurement point shown in Figure 1. The outside of the graphite piece is a coil. The number of turns and the spacing of the coil are fixed. An alternating current is passed through the coil to generate a corresponding magnetic field and magnetic flux. The graphite piece placed inside the coil generates an induced electromotive force, causing eddy currents to flow through the graphite piece. When the current flows through the graphite piece, an opposite force will be generated due to the resistance, causing energy to pass through the graphite piece in the form of heat, thereby realizing the heating of the graphite piece and the wafer inside it. The related semiconductor heat treatment equipment technology also has the following disadvantages: Disadvantage 1: Since the reaction gas flows horizontally through the graphite piece from the right side of the coil in Figure 1 and is pumped away from the left side of the coil, the ambient temperatures on the left and right sides of the graphite piece are relatively low. When the chamber is in a low-pressure vacuum state, according to the principle of thermal radiation, the temperatures on both sides of the coil are relatively low. The flow rate of the reaction gas, the pressure of the chamber, and the pumping force of the pump will all affect the temperature uniformity at the center position of the graphite piece. Since the position of the coil cannot be adjusted, the inter-turn spacing and the number of turns of the coil are fixed, and only the magnitude of the alternating current passing through the coil can be adjusted to adjust the temperature at the center position of the graphite piece, which not only consumes electricity but also increases the temperature adjustment time. Disadvantage 2: Since the graphite piece inside the coil is installed in an incompletely fixed form inside the coil, in the case of lack of reliable fixation, the center point of the graphite piece will deviate from the center position of the coil. In the case where the position of the coil cannot be adjusted, it affects the temperature uniformity at the center position of the graphite piece. Disadvantage 3: The parallel-inlet silicon carbide epitaxial equipment cannot directly measure the wafer temperature. Instead, it measures the temperature of the graphite component directly above the wafer to indirectly detect the wafer temperature. The measured temperature of the graphite component changes with the variation of the temperature field, and using a single temperature measurement hole to measure the temperature of the graphite component cannot guarantee the reliability of temperature measurement. To solve one of the above problems, this embodiment provides a semiconductor heat treatment equipment, including: a coil, a chamber, a first temperature sensor, a second temperature sensor, and a temperature controller. The above chamber is used to place the wafer to be processed. The coil is arranged around the chamber and provides a heat field for the chamber. Refer to the front view of the chamber structure shown in FIG. 2a and the side view of the chamber structure shown in FIG. 2b. The chamber is provided with a first temperature measurement hole 21 and a second temperature measurement hole 22, and the first temperature measurement hole 21 and the second temperature measurement hole 22 are distributed in the central area of the chamber; the position of the wafer 20 to be processed is set such that the center point of the wafer 20 to be processed coincides with the center point of the chamber, that is, the center point of the chamber and the center point of the wafer are the same point. The first temperature sensor is used to detect the temperature of the chamber through the first temperature measurement hole 21, denoted as the first temperature; the second temperature sensor is used to detect the temperature of the chamber through the second temperature measurement hole 22, denoted as the second temperature; the temperature controller is used to obtain the first temperature and the second temperature. When the temperature of the chamber reaches a steady state, it determines whether the central position of the coil deviates from the center point of the chamber based on the first temperature and / or the second temperature. If so, it controls the coil to translate along the central axis based on the first temperature and / or the second temperature until the central position of the coil reaches the center point of the chamber. It is easy to understand that the central axis of the coil coincides with the central axis of the chamber. After the process starts, a current is passed through the coil to heat the chamber with a constant power. After heating for a certain period of time (such as after heating for 30 minutes), the temperature of the chamber reaches the required process temperature. It is determined whether the fluctuation amplitude of the temperature of the chamber within a preset period of time is less than the set amplitude. If so, it is determined that the temperature of the chamber reaches a steady state. In a specific implementation manner, the temperature of the chamber can be detected in real time based on the first temperature sensor and / or the second temperature sensor. When the temperature of the chamber reaches the set process temperature and the fluctuation amplitude within 1 minute is less than 0.2 °C, it is determined that the temperature of the chamber reaches a steady state. The temperature of the chamber (i.e., the inner wall temperature of the chamber) is monitored based on the first temperature sensor and the second temperature sensor. The inventor's research found that when the temperature of the chamber reaches a steady state, the highest temperature point is at the center point of the coil or distributed within the central area of the chamber. This central area is centered on the center point of the chamber and has an edge at a certain distance (e.g., 5 mm) from the center. The temperature within this central area can all be regarded as the highest temperature point, that is, the difference between the temperature within this central area and the true highest temperature point is within the allowable deviation range. When the first temperature sensor and the second temperature sensor are distributed within the central area of the chamber, if the center point of the chamber coincides with the center point of the coil, that is, when the center point of the wafer coincides with the center point of the coil, the temperature values detected by the first temperature sensor and the second temperature sensor are equal, or the difference between the two is within the allowable deviation range. In one implementation, by determining whether the first temperature and the second temperature detected by the first temperature sensor and the second temperature sensor are equal or the difference between the two is within the allowable deviation range, it can be determined whether the central position of the coil deviates from the center point of the chamber or the distance from the center point exceeds the allowable deviation range, and further, it can be determined whether the center point of the wafer deviates from the central position of the coil. In some embodiments, the first temperature measurement hole 21 and the second temperature measurement hole 22 are distributed on both sides of the center of the chamber. In a preferred embodiment, the first temperature measurement hole 21 and the second temperature measurement hole 22 are symmetrically distributed with respect to the center of the chamber. This can make the first temperature sensor and the second temperature sensor equidistantly distributed within the central area of the wafer and be centrosymmetric. If the center point of the chamber coincides with the center point of the coil, that is, when the center point of the wafer coincides with the center point of the coil, the temperature values detected by the first temperature sensor and the second temperature sensor are equal. By determining whether the first temperature and the second temperature detected by the first temperature sensor and the second temperature sensor are equal, it can be determined whether the central position of the coil deviates from the center point of the chamber, and further, it can be determined whether the center point of the wafer deviates from the central position of the coil. It should be noted that in this embodiment, both the first temperature measurement hole 21 and the second temperature measurement hole 22 are one. However, the embodiments of the present application are not limited to this. In practical applications, both the first temperature measurement hole 21 and the second temperature measurement hole 22 can also be multiple and are arranged in pairs. Each pair of the first temperature measurement hole 21 and the second temperature measurement hole 22 is distributed within the central area of the chamber. On this basis, the first temperature sensor and the second temperature sensor are arranged in pairs, and each pair of the first temperature sensor and the second temperature sensor respectively corresponds to each pair of the first temperature measurement hole 21 and the second temperature measurement hole 22. In another embodiment, a chamber temperature distribution curve can be obtained when the temperature of the chamber reaches a steady state. By determining whether the first temperature detected by the first temperature sensor or the second temperature detected by the second temperature sensor is reasonable based on the chamber temperature distribution curve (for example, whether the first temperature or the second temperature is equal to the corresponding temperature in the chamber temperature distribution curve), it can be determined whether the center position of the coil deviates from the center point of the chamber or the distance from the center point exceeds the allowable deviation range. Furthermore, it can be determined whether the center point of the wafer deviates from the center position of the coil. In the semiconductor heat treatment equipment provided in this embodiment, by providing two temperature measurement holes on the chamber and, when the temperature of the chamber reaches a steady state, determining whether the center position of the coil deviates from the center point of the chamber or the distance from the center point exceeds the allowable deviation range based on the first temperature detected by the first temperature sensor and / or the second temperature detected by the second temperature sensor, it can be determined whether the center point of the wafer is located at the highest temperature point. When the wafer deviates from the center position of the coil, the coil is moved so that the center position of the coil reaches the center point of the chamber, ensuring that the center of the wafer coincides with the center of the coil during the process, so that the wafer is always at the highest temperature point, ensuring the uniformity of the wafer temperature. In one embodiment, the temperature controller provided in this embodiment is further configured to determine whether the first temperature is equal to the second temperature, or the difference between the two is within the allowable deviation range. If the first temperature is not equal to the second temperature, or the difference between the two exceeds the allowable deviation range, it is determined that the center position of the coil deviates from the center point of the chamber; the coil is controlled to translate along the central axis until the first temperature is equal to the second temperature, or the difference between the two is within the allowable deviation range, and it is determined that the center position of the coil reaches the center point of the chamber. When the temperature values detected by the first temperature sensor and the second temperature sensor are not equal, or the difference between the two exceeds the allowable deviation range, it indicates that the center point of the chamber does not coincide with the center point of the coil, that is, the center point of the wafer deviates from the center position of the coil or the distance from the center position exceeds the allowable deviation range. The coil is controlled to translate along the central axis (that is, the coil sleeved outside the chamber is translated along the central axis of the chamber, and the distance between the coil and the outer wall of the chamber remains unchanged during the translation, for example, keeping the central axis of the coil coincident with the central axis of the chamber), so as to translate the center position of the coil until the temperature values detected by the first temperature sensor and the second temperature sensor are equal, or the difference between the two is within the allowable deviation range, and it is determined that the center position of the coil reaches the center point of the chamber, that is, the center position of the coil reaches the center point of the wafer, and the wafer reaches the highest temperature point. In another embodiment, the chamber provided in this embodiment includes multiple regions, and the number of turns of the coil in each region is the same. The temperature gradient distribution curve when the temperature of the chamber reaches a steady state is stored in the temperature controller, and the temperature gradient distribution curve is the chamber temperature corresponding to each region. Based on the number of turns of the outer coil of the chamber, the coil is evenly divided into multiple regions. For example, the chamber inside a coil with a total of 10 turns can be divided into 10 regions, and the number of turns of the coil in each region is 1. Refer to the chamber temperature distribution curve diagram of each region of the chamber shown in Figure 3. In the curve diagram of Figure 3, the horizontal axis is the region number, and the vertical axis is the chamber temperature (unit: K). It can be seen from Figure 3 that the chamber temperature after the chamber reaches a steady state is axisymmetric and non-linearly distributed, and the highest point of the temperature is at the center point of the coil, that is, the center point of the chamber and the wafer. Therefore, when two temperature measurement points are distributed in the central region of the chamber, preferably evenly distributed and centrosymmetric in the central region of the chamber, if the center point of the coil coincides with the center point of the chamber, the temperatures measured by the two temperature measurement points are equal, or the difference between the two is within the allowable deviation range. The position of the coil can be adjusted by the temperature difference between the two temperature measurement points, and the highest point of the temperature field can be made to coincide with the center of the wafer. In some embodiments, the temperature controller is further configured to obtain the region where the first temperature measurement hole on the chamber is located, denoted as the first setting region; determine the chamber temperature corresponding to the first setting region in the temperature gradient distribution curve, denoted as the first target temperature; determine whether the first temperature is equal to the first target temperature, or whether the difference between the two is within the allowable deviation range. If the first temperature is not equal to the first target temperature or exceeds the allowable deviation range, it is determined that the center position of the coil deviates from the center point of the chamber. The above-mentioned first target temperature is the temperature that the first temperature sensor should detect when the center point of the chamber coincides with the center point of the coil. In some embodiments, the temperature controller is further configured to obtain the region where the second temperature measurement hole on the chamber is located, denoted as the second setting region; determine the chamber temperature corresponding to the second setting region in the temperature gradient distribution curve, denoted as the second target temperature; determine whether the second temperature is equal to the second target temperature, or whether the difference between the two is within the allowable deviation range. If the second temperature is not equal to the second target temperature or exceeds the allowable deviation range, it is determined that the center position of the coil deviates from the center point of the chamber. The above-mentioned second target temperature is the temperature that the second temperature sensor should detect when the center point of the chamber coincides with the center point of the coil. It should be noted that the temperature controller can either obtain the first setting area and determine the chamber temperature corresponding to the first setting area in the temperature gradient distribution curve. If the first temperature is not equal to the first target temperature or exceeds the allowable deviation range, it is determined that the center position of the coil deviates from the center point of the chamber. Or it can obtain the second setting area and determine the chamber temperature corresponding to the second setting area in the temperature gradient distribution curve. If the second temperature is not equal to the second target temperature or exceeds the allowable deviation range, it is determined that the center position of the coil deviates from the center point of the chamber. It can also obtain the first setting area and the second setting area, and determine the chamber temperatures corresponding to both in the temperature gradient distribution curve. If the first temperature is not equal to the first target temperature or exceeds the allowable deviation range, and / or the second temperature is not equal to the second target temperature or exceeds the allowable deviation range, it is determined that the center position of the coil deviates from the center point of the chamber. If the first temperature is equal to the first target temperature or the difference between the two is within the allowable deviation range, and the second temperature is equal to the second target temperature or the difference between the two is within the allowable deviation range, it indicates that the center point of the chamber coincides with the center point of the coil and the position of the coil has not shifted. Taking the chamber temperature distribution curve shown in Figure 3 as an example, assume that the first setting area of the first temperature measurement hole is area 8, and the second setting area of the second temperature measurement hole is area 2. According to the chamber temperature distribution curve, when the center point of the chamber coincides with the center point of the coil, the first target temperature corresponding to the first setting area 8 of the first temperature measurement hole in the temperature gradient distribution curve is 1550 °C, and the second target temperature corresponding to the second setting area 2 of the second temperature measurement hole in the temperature gradient distribution curve is 1550 °C. Therefore, when the temperature of the chamber reaches a steady state, it is judged whether the first temperature detected by the first temperature sensor is equal to the first target temperature. If the first temperature is not equal to the first target temperature, it indicates that the position of the coil has deviated and the center point of the chamber does not coincide with the center point of the coil; it is judged whether the second temperature detected by the second temperature sensor is equal to the second target temperature. If the second temperature is not equal to the second target temperature, it indicates that the position of the coil has deviated and the center point of the chamber does not coincide with the center point of the coil. If the first temperature detected by the first temperature sensor is equal to the second temperature detected by the second temperature sensor and both are equal to 1550 °C, it indicates that the center point of the chamber coincides with the center point of the coil and the position of the coil has not shifted. In one embodiment, the semiconductor heat treatment equipment provided in this embodiment further includes: a driving member, the driving member is connected to the coil, and the driving member is used to drive the coil to translate; the driving member includes, for example, a motor, etc. In one implementation manner, the temperature controller is further used to calculate the translation amount and translation direction of the coil based on the first target temperature and the first temperature; control the driving member to drive the coil to translate based on the translation amount and translation direction until the center point of the coil coincides with the center point of the chamber. When the first temperature detected by the first temperature sensor is greater than the first target temperature currently, it indicates that the center point of the coil is closer to the first temperature measurement hole, resulting in the temperature detected by the first temperature sensor being higher than the first target temperature that should be detected when the center of the coil has not deviated. Control the coil to translate in the direction of the second temperature measurement hole (i.e., the direction from the center point of the chamber to the second temperature measurement hole), and the translation amount is related to the difference between the first temperature and the first target temperature. The larger this difference is, the larger the translation amount; conversely, if the first temperature is less than the first chamber temperature, it indicates that the center point of the coil is closer to the second temperature measurement hole, resulting in the temperature detected by the first temperature sensor being lower than the first target temperature that should be detected when the center of the coil has not deviated. Control the coil to translate in the direction of the first temperature measurement hole (i.e., the direction from the center point of the chamber to the first temperature measurement hole), and the translation amount is related to (the difference between the first chamber temperature and the first temperature). The larger the difference between the first chamber temperature and the first temperature is, the larger the translation amount. Exemplarily, taking the chamber temperature distribution curve shown in FIG. 3 as an example, assuming that the first temperature measurement hole is set in region 8. When the center point of the chamber coincides with the center point of the coil, as shown in FIG. 3, the first target temperature that the first temperature sensor should detect is 1550 °C. If, when the chamber temperature reaches a steady state, the first temperature detected by the first temperature sensor is 1600 °C, it indicates that the curve in FIG. 3 has translated one region in the direction of the first temperature measurement hole (the direction from region 2 to region 8), that is, the chamber has translated one region towards the second temperature measurement hole, and the distance between the center of the coil and the first temperature measurement hole is relatively close. Control the coil to translate one region length (such as 30 mm) in the direction of the second temperature measurement hole (the direction from region 8 to region 2) so that both the first temperature and the second temperature are restored to 1550 °C. In some embodiments, taking the driving member including a rotary motor and a transmission structure as an example, by controlling the forward and reverse rotation of the rotary motor, and converting the power provided by the rotary motor into linear power through the transmission structure and transmitting it to the coil to control the translation direction of the coil. Of course, in practical applications, the driving member may also include a linear motor, etc. In another implementation manner, the temperature controller is further configured to calculate the translation amount and translation direction of the coil based on the second target temperature and the second temperature; control the rotation of the motor based on the translation amount and translation direction to drive the coil to translate until the center point of the coil coincides with the center point of the chamber. When the second temperature currently detected by the second temperature sensor is greater than the second target temperature, it indicates that the center point of the coil is closer to the second temperature measurement hole and farther from the first temperature measurement hole. As a result, the second temperature detected by the second temperature sensor is higher than the second target temperature that should be detected when the center of the coil is not deviated. Control the coil to translate in the direction of the first temperature measurement hole, and the translation amount is related to the difference between the second temperature and the second chamber temperature. The greater the difference between the second temperature and the second chamber temperature, the greater the translation amount. Conversely, if the second temperature is less than the second target temperature, it indicates that the center point of the coil is closer to the first temperature measurement hole and farther from the second temperature measurement hole. As a result, the second temperature detected by the second temperature sensor is lower than the second target temperature that should be detected when the center of the coil is not deviated. Control the coil to translate in the direction of the second temperature measurement hole, and the translation amount is related to the difference between the second chamber temperature and the second temperature. The greater the difference between the second chamber temperature and the second temperature, the greater the translation amount. Exemplarily, taking the chamber temperature distribution curve shown in FIG. 3 as an example, assume that the second temperature measurement hole is set in region 2. When the center of the chamber coincides with the center of the coil, as shown in FIG. 3, the second target temperature that the second temperature sensor should detect is 1550 °C. If when the chamber temperature reaches a steady state, the second temperature detected by the second temperature sensor is 1500 °C, it indicates that the curve in FIG. 3 has translated one region in the direction of the first temperature measurement hole (i.e., the direction from region 2 to region 8), that is, the chamber has translated one region in the direction of the second temperature measurement hole. The center of the coil is closer to the first temperature measurement hole and farther from the second temperature measurement hole. Control the coil to translate one region length (such as 30 mm) in the direction of the second temperature measurement hole (i.e., the direction from region 8 to region 2) so that both the first temperature and the second temperature are restored to 1550 °C. In one embodiment, the temperature controller provided in this embodiment is a programmable logic controller. The programmable logic controller is respectively communicatively connected to the first temperature sensor, the second temperature sensor, and the induction power supply of the coil, so as to obtain the first temperature detected by the first temperature sensor, the second temperature detected by the second temperature sensor, as well as the alternating current I and the current frequency f passing through the coil. The above semiconductor heat treatment equipment provided in this embodiment can adjust and translate the coil according to the temperature distribution curve in the chamber and the temperatures detected by the two temperature sensors, ensuring that the highest temperature point of the center point of the coil coincides with the center point of the wafer and ensuring the temperature uniformity during wafer growth; the chamber temperature control is simple and the calculation speed is fast, improving the temperature adjustment efficiency; and by using two temperature sensors to detect the temperature in the chamber, the temperature measurement can be more effectively and reliably performed. The positions of the two temperature measurement holes can be used as judgment conditions for coil position adjustment, which can ensure the temperature uniformity of the wafer area. Corresponding to the semiconductor heat treatment equipment provided in the above embodiments, this embodiment provides a temperature control method for a semiconductor heat treatment equipment, which is applied to the semiconductor heat treatment equipment provided in the above embodiments. Referring to the flowchart of the temperature control method for the semiconductor heat treatment equipment shown in FIG. 4, this method mainly includes the following steps: Step S402, obtain the first temperature detected by the first temperature sensor and obtain the second temperature detected by the second temperature sensor; The temperature controller is communicatively connected to the first temperature sensor and the second temperature sensor respectively, and obtains in real time the first temperature detected by the first temperature sensor and the second temperature detected by the second temperature sensor. Step S404, when the temperature of the chamber reaches a steady state, determine whether the central position of the coil deviates from the center point of the chamber based on the first temperature and / or the second temperature; After the process starts, a current is passed through the coil to heat the chamber with a constant power. After heating for a certain period of time (such as after heating for 30 minutes), the temperature of the chamber reaches the required process temperature. Determine whether the fluctuation amplitude of the chamber temperature within a preset period of time is less than the set amplitude. If so, it is determined that the temperature of the chamber reaches a steady state. When the temperature of the chamber reaches a steady state, when the center point of the chamber coincides with the center point of the coil, the temperature values detected by the first temperature sensor and the second temperature sensor are equal. In one implementation, by determining whether the first temperature and the second temperature detected by the first temperature sensor and the second temperature sensor are equal or the difference between the two is within the allowable deviation range, it can be determined whether the central position of the coil deviates from the center point of the chamber, and further it can be determined whether the center point of the wafer deviates from the central position of the coil. In another implementation, by judging whether the first temperature detected by the first temperature sensor or the second temperature detected by the second temperature sensor is reasonable based on the chamber temperature distribution curve (for example, whether the first temperature or the second temperature corresponds equally to the temperature in the chamber temperature distribution curve), it can be determined whether the central position of the coil deviates from the center point of the chamber, and further it can be determined whether the center point of the wafer deviates from the central position of the coil. Step S406, if so, control the coil to translate along the central axis based on the first temperature and / or the second temperature until the central position of the coil reaches the center point of the chamber. In one embodiment, the coil is translated along the central axis based on the first temperature and the second temperature until the first temperature is equal to the second temperature or the difference between the two is within the allowable deviation range, and the central position of the coil is determined to reach the center point of the chamber; in another embodiment, a temperature distribution curve of the chamber when the temperature of the chamber reaches a steady state can be obtained, and the coil is translated along the central axis based on the first temperature or the second temperature. When the first temperature or the second temperature is correspondingly equal to the temperature in the temperature distribution curve of the chamber, the central position of the coil is determined to reach the center point of the chamber. For the temperature control method of the semiconductor heat treatment equipment provided in this embodiment, by providing two temperature measurement holes on the chamber and, when the temperature of the chamber reaches a steady state, determining whether the central position of the coil deviates from the center point of the chamber based on the first temperature detected by the first temperature sensor and / or the second temperature detected by the second temperature sensor, it can be determined whether the center point of the wafer is located at the highest temperature point. When the wafer deviates from the central position of the coil, the coil is moved so that the central position of the coil reaches the center point of the chamber, ensuring that the center of the wafer coincides with the center of the coil during the process, so that the wafer is always at the highest temperature point, ensuring the uniformity of the wafer temperature. In one embodiment, this embodiment provides a specific implementation manner for determining whether the central position of the wafer coil deviates from the center point of the chamber based on the first temperature and the second temperature: determine whether the first temperature is equal to the second temperature or the difference between the two is within the allowable deviation range. If the first temperature is not equal to the second temperature or the difference between the two exceeds the allowable deviation range, it is determined that the central position of the coil deviates from the center point of the chamber. In one embodiment, this embodiment provides an implementation manner for controlling the coil to translate along the central axis based on the first temperature and the second temperature until the central position of the coil reaches the center point of the chamber. The specific steps can be executed as follows: Step (1): When the first temperature is greater than the second temperature, control the coil to translate in the first direction until the first temperature is equal to the second temperature; wherein, the first direction is the direction where the second temperature measurement hole is located. If the first temperature is greater than the second temperature, it indicates that the temperature detected by the first temperature sensor is higher, and the center point of the coil is biased towards the direction where the first temperature measurement hole is located. Control the coil to translate in the direction where the second temperature measurement hole is located (i.e., the direction from the area where the first temperature measurement hole is located to the area where the second temperature measurement hole is located) so that the first temperature is equal to the second temperature. Taking the chamber shown in Figure 2b as an example, when the first temperature is greater than the second temperature, it indicates that the center point of the coil is closer to the first temperature measurement hole 21, and the center point of the coil is on the right side of the center point of the chamber. Control the coil to translate in the direction where the second temperature measurement hole is located, that is, control the coil to translate to the left until the first temperature is equal to the second temperature, and the center point of the wafer coincides with the center point of the coil. Step (2): When the first temperature is less than the second temperature, control the coil to translate in the second direction until the first temperature is equal to the second temperature; wherein, the second direction is the direction where the first temperature measurement hole is located. If the first temperature is less than the second temperature, it indicates that the temperature detected by the second temperature sensor is relatively high, and the center point of the coil is closer to the second temperature measurement hole. Control the coil to translate in the direction where the first temperature measurement hole is located so that the first temperature is equal to the second temperature. Taking the chamber shown in Figure 2b as an example, when the first temperature is less than the second temperature, it indicates that the center point of the coil is closer to the second temperature measurement hole 22, and the center point of the coil is on the left side of the center point of the chamber. Control the coil to translate in the direction where the first temperature measurement hole 21 is located, that is, control the coil to translate to the right until the first temperature is equal to the second temperature, and the center point of the wafer coincides with the center point of the coil. In one embodiment, in order to prove that the highest temperature point is at the center position of the coil, the method provided in this embodiment further includes the following steps: Step 1): Calculate the skin depth of the chamber at the preset process temperature, obtain the alternating current value of the coil, divide the chamber into multiple regions based on the number of turns of the coil, and calculate the heat source intensity of each region in the chamber based on the skin depth and the alternating current value; wherein, the number of turns of the coil in each region is the same; Analyze the temperature field of the coil to determine the position of the highest temperature in the chamber. First, analyze the magnetic field intensity of the chamber. The calculation formula for the magnetic field intensity acting on the chamber is: (Formula 1) Wherein, is the number of turns of the coil, is the winding length of the coil. The eddy current density acting on the inner surface of the chamber is: (Formula 2) Wherein, is the eddy current density on the surface of the chamber, is the skin depth, is the magnetic field intensity, is the radius of the measured point, is the cylinder radius of the chamber. The calculation formula for the skin depth is: (Formula 3) Wherein, is the angular frequency ( = 2πf (rad / s), frequency f = 4900 Hz), is the magnetic permeability ( = 4π * 10 7 ) is the conductivity (such as it can be 83333 S / m). As the radius changes, the calculation formula for the eddy current density at the measured point is: (Formula Four) When considering the infinitesimal area ds on the radius r, the calculation formula for the eddy current passing through the infinitesimal area is: (Formula Five) Then the calculation formula for the power generated by the eddy current is: (Formula Six) Among them, is the effective resistance value of the material of the eddy current passing through the infinitesimal area, is the conversion parameter ( = 4.18 cal / w). Based on the above Formulas Five and Six, the heat source intensity can be calculated. Based on the number of turns of the coil, the chamber is evenly divided into multiple regions, and the number of turns of the coil included in each region is the same. For example, when the number of turns of the coil is 30, if the chamber is divided into 10 regions, then the number of turns of the coil in each region is 3; when the number of turns of the coil is 10, if the chamber is divided into 10 regions, the number of turns of the coil in each region = 1, and the winding length of the coil in each region = 30 mm, then the calculation formula for the heat source intensity of the i-th region of the chamber is: (Formula Seven) Among them, is the resistivity of the chamber material, is the alternating current passing through the coil, is the heat source intensity of the i-th region. Since the number of turns of the coil in each region is the same and the length of the coil is constant, through simulation calculation, it can be obtained that the heat source intensity in each region is equal. Assuming that the thickness of the chamber is 15 mm and the measured point r = 0.085 m, referring to the schematic diagram of the heat source intensity distribution in each region of the chamber shown in Figure 5, it can be calculated that F1 = F2 = F3 =…= F10 = 3.9511*10 4 W / m 3 , that is, the heat source intensity in each region of the chamber is the same. Step 3): Obtain the ambient temperature at both ends of the chamber when the temperature of the chamber reaches a steady state, and calculate the temperature of each region of the chamber based on the ambient temperature and the heat source intensity of each region to obtain the temperature gradient distribution curve of the chamber. Calculate the heat of each region based on the heat source intensity of each region: (Formula Eight) Among them, is the heat of the i-th region, is the volume of the i-th region, and t is the heating time. In the case of no external force interference and a stable heat source intensity inside the chamber, when the energy inside the chamber is uniform, it is necessary to consider the influence of the ambient temperature on the temperature field inside the chamber. The influence of the chamber environment on the chamber can be calculated and simulated for heat loss using the following formula (9). When considering the equilibrium state between the ambient temperature and the temperature inside the chamber, the temperature at the front and back of the chamber is stable, and the heat generated by the chamber is equal to the heat absorbed at the front and back of the chamber. (Formula 9) Where, is the change in the heat of the chamber environment caused by thermal radiation, is the Stokes constant, is the surface emissivity of the chamber, A is the inner surface area of the chamber, is the ambient temperature, is the chamber temperature after reaching the steady state (i.e., the inner surface temperature of the chamber). Assuming the heating time t = 1s, the calculation formula for the chamber temperature is: (Formula 10) In a specific implementation manner, this embodiment provides an implementation manner for calculating the chamber temperature of each region based on the ambient temperature and the heat source intensity of each region. Specifically, it can be executed according to the following steps: Step 1: Starting from the first region at any end of the chamber, calculate the chamber temperature of the first region at the steady state during the manufacturing process based on the heat source intensity and ambient temperature of the first region; Starting from the first region at one end of the chamber, taking the chamber in Fig. 2b as an example, for example, when the number of turns of the coil is 10, the chamber is divided into 10 regions. Starting from the first region at the leftmost end of the chamber in Fig. 2b, the calculation formula for the chamber temperature of the first region is: Where, is the chamber temperature of the 1st region, is the heat source intensity of the 1st region, is the Stokes constant, is the surface emissivity of the chamber, A is the inner surface area of the chamber, is the ambient temperature corresponding to the 1st region (i.e., the ambient temperature at both ends of the chamber, which can be actually detected based on a thermometer), is the volume of the 1st region. Step 2: Take the chamber temperature of the first region as the ambient temperature of the adjacent next region, and calculate the chamber temperature of the next region at the steady state during the manufacturing process based on the ambient temperature of the next region and the heat source intensity of the next region, until the chamber temperature of the region where the center point of the chamber is located is calculated; Take the chamber temperature of the first region as the ambient temperature of the next adjacent region, that is , the calculation formula for the chamber temperature of the next region (i.e., the second region) is: Where, is the chamber temperature of the 2nd region, is the heat source intensity of the 1st region, is the ambient temperature corresponding to the 2nd region (that is, take the chamber temperature of the first region as the ambient temperature of the adjacent second region), is the volume of the 2nd region. Take the chamber temperature of the second region as the ambient temperature of the adjacent third region, and so on, and calculate the chamber temperatures of each region from the first region to the region where the center point of the chamber is located in turn. Where, is the chamber temperature of the i-th region, is the heat source intensity of the i-th region, is the Stokes constant, is the surface heat emissivity of the chamber, A is the inner surface area of the chamber, is the ambient temperature corresponding to the i-th region, is the volume of the i-th region. Step 3, based on the symmetry of the chamber temperatures of each region from the first region at one end of the chamber to the region where the center point is located, obtain the chamber temperatures of each region from the region where the center point of the chamber is located to the other end of the chamber. Due to the symmetry of the chamber temperature, the chamber temperature curve of the relatively symmetric other half region can be obtained from the curve of the chamber temperature from the first region to the region where the center point of the chamber is located. When the chamber reaches a steady state, refer to the chamber temperature distribution curve of each region of the chamber shown in Figure 3. In the curve of Figure 3, the horizontal axis is the region number, and the vertical axis is the chamber temperature (unit: K). It can be seen from Figure 3 that the temperature model after the chamber reaches a steady state is an axisymmetric non-linear distribution, and the highest point of the temperature is at the center point position of the coil, that is, the center point of the chamber and the wafer. Therefore, when the two temperature measurement holes are evenly distributed in the chamber center point region and are centrosymmetric, when the center point of the coil coincides with the center point of the chamber, the temperatures measured by the two temperature sensors are equal. In one embodiment, this embodiment provides two implementation manners for judging whether the center position of the coil deviates from the center point of the chamber based on the first temperature and / or the second temperature: In one implementation, obtain the area where the first temperature measurement hole is located on the chamber, denoted as the first setting area; determine the chamber temperature corresponding to the first setting area in the temperature gradient distribution curve, denoted as the first target temperature; determine whether the first temperature is equal to the first target temperature. If the first temperature is not equal to the first target temperature, determine that the center position of the coil deviates from the center point of the chamber. The setting position of the above temperature measurement hole on the chamber is usually unchanged. Obtain the area where the first temperature measurement hole is located, denoted as the first setting area, and determine the chamber temperature corresponding to the first setting area in the temperature gradient distribution curve, that is, the temperature that the first temperature sensor should theoretically detect when the chamber temperature reaches a steady state and the center point of the coil coincides with the center point of the chamber, denoted as the first target temperature. If the first temperature is equal to the first target temperature, determine that the center position of the coil does not deviate from the center point of the chamber, and the wafer is located at the highest temperature point. In another implementation, obtain the area where the second temperature measurement hole is located on the chamber, denoted as the second setting area; determine the chamber temperature corresponding to the second setting area in the temperature gradient distribution curve, denoted as the second target temperature; determine whether the second temperature is equal to the second target temperature. If the second temperature is not equal to the second target temperature, determine that the center position of the coil deviates from the center point of the chamber. Obtain the area where the second temperature measurement hole is located, denoted as the second setting area, and determine the chamber temperature corresponding to the second setting area in the temperature gradient distribution curve, that is, the temperature that the second temperature sensor should theoretically detect when the chamber temperature reaches a steady state and the center point of the coil coincides with the center point of the chamber, denoted as the second target temperature. If the second temperature is equal to the second target temperature, determine that the center position of the coil does not deviate from the center point of the chamber, and the wafer is located at the highest temperature point. In one embodiment, the semiconductor heat treatment equipment provided in this embodiment further includes a driving member. The driving member is connected to the coil, and the driving member is used to drive the coil to translate. This embodiment provides two implementation manners for controlling the coil to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber. Specifically, it can be executed with reference to the following Embodiment 1 and Embodiment 2: Embodiment 1: Calculate the translation amount and translation direction of the coil based on the first target temperature and the first temperature; control the driving member to rotate based on the translation amount and translation direction to drive the coil to translate until the center position of the coil coincides with the center point of the chamber. When the first temperature detected by the first temperature sensor currently is greater than the first target temperature, it indicates that the center point of the coil is closer to the first temperature measurement hole, resulting in the temperature detected by the first temperature sensor being higher than the first target temperature that should be detected when the center of the coil has not deviated. Control the coil to translate in the direction of the second temperature measurement hole (i.e., the direction from the center point of the chamber to the second temperature measurement hole), and the translation amount is related to the difference between the first temperature and the first target temperature. The larger this difference is, the larger the translation amount; conversely, if the first temperature is less than the first chamber temperature, it indicates that the center point of the coil is closer to the second temperature measurement hole, resulting in the temperature detected by the first temperature sensor being lower than the first target temperature that should be detected when the center of the coil has not deviated. Control the coil to translate in the direction of the first temperature measurement hole (i.e., the direction from the center point of the chamber to the first temperature measurement hole), and the translation amount is related to (the difference between the first chamber temperature and the first temperature). The larger this difference is, the larger the translation amount. Embodiment 2: Calculate the translation amount and translation direction of the coil based on the second target temperature and the second temperature; control the driving member to rotate based on the translation amount and translation direction to drive the coil to translate until the center position of the coil coincides with the center point of the chamber. When the second temperature detected by the second temperature sensor currently is greater than the second target temperature, it indicates that the center point of the coil is closer to the second temperature measurement hole and farther from the first temperature measurement hole, resulting in the second temperature detected by the second temperature sensor being higher than the second target temperature that should be detected when the center of the coil has not deviated. Control the coil to translate in the direction of the first temperature measurement hole, and the translation amount is related to (the difference between the second temperature and the second chamber temperature). The larger this difference is, the larger the translation amount; conversely, if the second temperature is less than the second target temperature, it indicates that the center point of the coil is closer to the first temperature measurement hole and farther from the second temperature measurement hole, resulting in the second temperature detected by the second temperature sensor being lower than the second target temperature that should be detected when the center of the coil has not deviated. Control the coil to translate in the direction of the second temperature measurement hole, and the translation amount is related to (the difference between the second chamber temperature and the second temperature). The larger this difference is, the larger the translation amount. The temperature control method of the semiconductor heat treatment equipment provided in this embodiment can adjust the translation of the coil according to the temperature distribution curve in the chamber and the temperatures detected by the two temperature sensors, ensuring that the highest temperature point of the center point of the coil coincides with the center point of the wafer and ensuring the temperature uniformity during wafer growth; the chamber temperature control is simple and the calculation speed is fast, improving the temperature adjustment efficiency; and using two temperature sensors to detect the temperature in the chamber can measure the temperature more effectively and reliably. The positions of the two temperature measurement holes can be used as the judgment conditions for coil position adjustment, which can ensure the temperature uniformity of the wafer. For the method provided in this embodiment, its implementation principle and the technical effects generated are the same as those of the previous embodiment. For the sake of brief description, for the parts not mentioned in the method embodiment, reference can be made to the corresponding content in the previous equipment embodiment. An embodiment of the present application provides a computer-readable medium, wherein the computer-readable medium stores computer-executable instructions, and when the computer-executable instructions are called and executed by a processor, the computer-executable instructions cause the processor to implement the method described in the above embodiment. Those skilled in the art can clearly understand that for the convenience and brevity of description, the specific working process of the above-described system can refer to the corresponding process in the foregoing embodiment, and will not be repeated here. The computer program product of the temperature control method of the semiconductor heat treatment equipment provided by the embodiment of the present application includes a computer-readable storage medium storing program codes, and the instructions included in the program codes are used to execute the method described in the foregoing method embodiment. For the specific implementation, reference can be made to the method embodiment, and will not be repeated here. In addition, in the description of the embodiments of the present application, unless otherwise clearly specified and limited, the terms "installation", "connection", and "connection" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific situations. If the above functions are implemented in the form of software function units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present application, in essence, or the part that contributes to the prior art, or a part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions to cause a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods described in the embodiments of the present application. The foregoing storage medium includes: various media such as USB flash drives, mobile hard disks, read-only memories (ROMs), random access memories (RAMs), magnetic disks, or optical disks that can store program codes. In the description of the present application, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to the present application. In addition, the terms "first", "second", and "third" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance. Finally, it should be noted that the above-described embodiments are only specific implementation manners of the present application, used to illustrate the technical solutions of the present application, rather than limiting it. The protection scope of the present application is not limited thereto. Although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that any person skilled in the art within the technical scope disclosed in the present application can still modify the technical solutions described in the foregoing embodiments, or can easily think of changes, or perform equivalent replacements on some of the technical features; and these modifications, changes or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application, and should all be covered within the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims. 20: Wafer to be processed 21: First temperature measurement hole 22: Second temperature measurement hole In order to more clearly illustrate the technical solutions in the embodiments of the present application or the background art, the following will briefly introduce the drawings required for the description of the embodiments or the background art. Obviously, the following drawings are only the embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained according to the provided drawings. In the drawings: Figure 1 shows a schematic diagram of the chamber structure of a related semiconductor heat treatment device; Figure 2a shows a front view of a chamber structure provided by an embodiment of the present application; Figure 2b shows a side view of a chamber structure provided by an embodiment of the present application; Figure 3 shows a chamber temperature distribution curve diagram of each region of a chamber provided by an embodiment of the present application; Figure 4 shows a flowchart of a temperature control method for a semiconductor heat treatment device provided by an embodiment of the present application; Figure 5 shows a schematic diagram of the heat source intensity distribution of each region in a chamber provided by an embodiment of the present application. 21: First temperature measurement hole 22: Second temperature measurement hole

Claims

1. A semiconductor heat treatment apparatus, wherein, include: The system comprises a coil, a chamber, a first temperature sensor, a second temperature sensor, and a temperature controller. The chamber is used to hold a wafer to be processed. The coil surrounds the chamber and provides a thermal field. The chamber has a first temperature sensing aperture and a second temperature sensing aperture, which are distributed in the central region of the chamber. The first temperature sensor detects the temperature of the chamber through the first temperature sensing aperture, denoted as a first temperature. The second temperature sensor detects the temperature of the chamber through the second temperature sensing aperture, denoted as a second temperature. The temperature controller acquires the first temperature and the second temperature. When the temperature of the chamber reaches a steady state, it determines whether the center position of the coil deviates from the center point of the chamber based on the first temperature and / or the second temperature. If so, it controls the coil to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber.

2. The semiconductor heat treatment apparatus as claimed in claim 1, wherein, The temperature controller is also used to determine whether the first temperature and the second temperature are equal. If the first temperature and the second temperature are not equal, it determines that the center position of the coil is deviated from the center point of the chamber. Based on the first temperature and the second temperature, it controls the coil to translate along the central axis until the first temperature equals the second temperature, and determines that the center position of the coil reaches the center point of the chamber.

3. The semiconductor heat treatment apparatus as claimed in claim 1, wherein, The chamber comprises multiple regions, and the number of coil turns in each region is the same. The temperature controller stores a temperature gradient distribution curve when the temperature of the chamber reaches a steady state, and the temperature gradient distribution curve represents the chamber temperature corresponding to each region. The temperature controller is also used to acquire the region where the first temperature measuring hole is located on the chamber, denoted as a first setting region; determine the chamber temperature corresponding to the first setting region in the temperature gradient distribution curve, denoted as a first target temperature; determine whether the first temperature is equal to the first target temperature; if the first temperature is not equal to the first target temperature, determine that the center position of the coil deviates from the center point of the chamber; and / or, the temperature controller is also used to acquire the region where the second temperature measuring hole is located on the chamber, denoted as a second setting region; determine the chamber temperature corresponding to the second setting region in the temperature gradient distribution curve, denoted as a second target temperature; determine whether the second temperature is equal to the second target temperature; if the second temperature is not equal to the second target temperature, determine that the center position of the coil deviates from the center point of the chamber.

4. The semiconductor heat treatment apparatus as described in claim 3, wherein, It also includes: a driving member connected to the coil, the driving member being used to drive the coil to translate; the temperature controller is further used to calculate the translation amount and direction of the coil based on the first target temperature and the first temperature; and to control the driving member to drive the coil to translate based on the translation amount and direction until the center point of the coil coincides with the center point of the chamber; and / or, the temperature controller is further used to calculate the translation amount and direction of the coil based on the second target temperature and the second temperature; and to control the driving member to drive the coil to translate based on the translation amount and direction until the center point of the coil coincides with the center point of the chamber.

5. The semiconductor heat treatment apparatus as claimed in claim 1, wherein, The temperature controller is a programmable logic controller, which is communicatively connected to the first temperature sensor, the second temperature sensor, and an inductive power supply of the coil.

6. A temperature control method for a semiconductor heat treatment apparatus, wherein, The temperature control method, applicable to any one of claims 1-5, comprises: acquiring a first temperature detected by a first temperature sensor, and acquiring a second temperature detected by a second temperature sensor; when the temperature of the chamber reaches a steady state, determining, based on the first temperature and / or the second temperature, whether the center position of the coil deviates from the center point of the chamber; if so, controlling the coil to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber.

7. The method as described in claim 6, wherein, The method of determining whether the center position of the coil deviates from the center point of the chamber based on the first temperature and / or the second temperature includes: determining whether the first temperature and the second temperature are equal; if the first temperature and the second temperature are not equal, determining that the center position of the coil deviates from the center point of the chamber; and / or, the method of controlling the coil to translate along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber includes: when the first temperature is greater than the second temperature, controlling the coil to translate in a first direction until the first temperature is equal to the second temperature; wherein the first direction is the direction in which the second temperature measuring hole is located; when the first temperature is less than the second temperature, controlling the coil to translate in a second direction until the first temperature is equal to the second temperature; wherein the second direction is the direction in which the first temperature measuring hole is located.

8. The method as described in request item 6, wherein, It also includes: calculating a skin depth of the chamber at a preset process temperature, obtaining an alternating current value of the coil, dividing the chamber into multiple regions based on the number of turns of the coil, and calculating the heat source intensity of each region in the chamber based on the skin depth and the alternating current value; wherein the number of coil turns in each region is the same; obtaining the ambient temperature at both ends of the chamber when the temperature of the chamber reaches a steady state, calculating the chamber temperature of each region based on the ambient temperature and the heat source intensity of each region, and obtaining the temperature gradient distribution curve of the chamber.

9. The method as described in claim 8, wherein, The calculation of the chamber temperature of each region based on the ambient temperature and the heat source intensity of each region includes: starting from the first region at any end of the chamber, calculating the chamber temperature of the first region when the process reaches a steady state based on the heat source intensity of the first region and the ambient temperature; using the chamber temperature of the first region as the ambient temperature of the next adjacent region, calculating the chamber temperature of the next region when the process reaches a steady state based on the ambient temperature of the next region and the heat source intensity of the next region, until the chamber temperature of the region where the center point of the chamber is located is calculated; and obtaining the chamber temperatures of each region from the region where the center point of the chamber is located to the other end of the chamber based on the symmetry of the chamber temperatures from the first region to the region where the center point is located.

10. The method as described in claim 9, wherein, The formula for calculating the temperature of the chamber is: where is the temperature of the chamber in the i-th region, is the heat source intensity in the i-th region, is the Stokes constant, is the thermal emissivity of the chamber surface, is the inner surface area of ​​the chamber, is the ambient temperature corresponding to the i-th region, and is the volume of the i-th region.

11. The method as described in claim 8, wherein, The method of determining whether the center position of the coil deviates from the center point of the chamber based on the first temperature and / or the second temperature includes: obtaining the area where the first temperature measuring hole is located on the chamber, denoted as a first setting area; determining the chamber temperature corresponding to the first setting area in the temperature gradient distribution curve, denoted as a first target temperature; determining whether the first temperature and the first target temperature are equal; if the first temperature and the first target temperature are not equal, determining that the center position of the coil deviates from the center point of the chamber; and / or, obtaining the area where the second temperature measuring hole is located on the chamber, denoted as a second setting area; determining the chamber temperature corresponding to the second setting area in the temperature gradient distribution curve, denoted as a second target temperature; determining whether the second temperature and the second target temperature are equal; if the second temperature and the second target temperature are not equal, determining that the center position of the coil deviates from the center point of the chamber.

12. The method as described in claim 11, wherein, The semiconductor heat treatment apparatus further includes a drive unit connected to the coil, the drive unit being used to drive the coil to translate; controlling the translation of the coil along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber includes: calculating the translation amount and translation direction of the coil based on the first target temperature and the first temperature; controlling the drive unit to drive the coil to translate based on the translation amount and translation direction until the center position of the coil coincides with the center point of the chamber; and / or, calculating the translation amount and translation direction of the coil based on the second target temperature and the second temperature; controlling the drive unit to drive the coil to translate based on the translation amount and translation direction until the center position of the coil coincides with the center point of the chamber.

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