Semiconductor structure and manufacturing method thereof
The semiconductor structure with a conductive plug connecting electrode layers addresses capacitance challenges by increasing the effective electrode area, enhancing capacitor performance.
TWI934283BActive Publication Date: 2026-08-01POWERCHIP SEMICON MFG CORP
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Patent Information
- Application Number
- TW113134938
- Authority / Receiving Office
- TW · TW
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2024-09-13
- Publication Date
- 2026-08-01
- Estimated Expiration
- 2044-09-12
AI Technical Summary
Technical Problem
Existing capacitors face challenges in achieving further capacitance enhancement due to miniaturization, necessitating innovative designs to increase effective electrode area.
Method used
A semiconductor structure is developed with a capacitor configuration that includes a first electrode layer, first and second dielectric layers, and a conductive plug connecting the electrode layers, allowing for increased effective electrode area through direct electrical connections.
Benefits of technology
The structure effectively enhances capacitance by increasing the effective area of capacitor electrodes, thereby improving performance.
✦ Generated by Eureka AI based on patent content.
Abstract
A semiconductor structure includes a substrate and a capacitor structure. The capacitor structure includes a first electrode layer, a first dielectric layer, a second electrode layer, a second dielectric layer, a third electrode layer, and a first conductive plug. The first electrode layer is located on the substrate. The first dielectric layer is located on the first electrode layer. The second electrode layer is located on the first dielectric layer. The second dielectric layer is located on the second electrode layer. The third electrode layer is located on the second dielectric layer. The first conductive plug is located between the first electrode layer and the third electrode layer. The first conductive plug is electrically connected to the first electrode layer and the third electrode layer. The bottom surface of the first conductive plug is directly connected to the upper surface of the first electrode layer. The top surface of the first conductive plug is directly connected to the lower surface of the third electrode layer.
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