Crystal pulling methods and systems for manufacturing large-diameter silicon single crystals, silicon single crystals, and computer storage media.
Patent Information
- Authority / Receiving Office
- TW · TW
- Patent Type
- Patents
- Current Assignee / Owner
- XIAN ESWIN MATERIAL TECHNOLOGY CO LTD
- Filing Date
- 2024-12-18
- Publication Date
- 2026-08-01
Smart Images
Figure TWG2TB001903715_001 
Figure TWG2TB001903715_002 
Figure TWG2TB001903715_003
Abstract
Description
Technical Field
[0001] The present invention claims priority to Chinese Patent Application No. 202410827909.8 filed in China on June 25, 2024, the entire contents of which are incorporated herein by reference.
[0002] The embodiments of the present invention relate to the field of semiconductor manufacturing technology, and more particularly to a crystal pulling method, system, silicon single crystal and medium for manufacturing large-diameter silicon single crystals. Prior Art
[0003] In recent years, with the development of semiconductor chips, high-end process chips have higher and higher requirements for silicon wafer native defects, including void defects (Crystal Originated Particle, COP) formed by vacancy aggregation and large lattice interstitial dislocation cluster defects (LDP) formed by interstitial atomic clusters. These defects may cause gate insulation deterioration and leakage current in the back-end manufacturing process (Fabrication Process, Fab).
[0004] The current mainstream method of controlling native crystal defects is based on the V / G theory of the Voronkov model. This model explains that when V / G is greater than the critical value ξ, COP defects will occur, and when V / G is less than the critical value ξ, LDP defects will occur. Only when V / G is near a certain critical value ξ can defect-free crystals (Defect free) be obtained. However, the critical value ξ is not a fixed value. Therefore, in related technologies, in order to obtain defect-free crystals (Defect free), a large number of experiments are usually required to determine the distribution of defects under different thermal fields and different process conditions, resulting in a high cost for producing defect-free crystals. Summary of the invention
[0005] In view of this, the embodiments of the present invention hope to provide a crystal pulling method, system, silicon single crystal and medium for manufacturing large-diameter silicon single crystals, which can quickly determine the crystal pulling parameters through numerical simulation calculations, and use them to effectively control the flow of silicon melt to stably form large-diameter silicon single crystals, and can solve the technical problem of high cost of producing defect-free crystals in related technologies.
[0006] The technical solution of the embodiment of the present invention is achieved as follows:
[0007] In a first aspect, an embodiment of the present invention provides a crystal pulling method for manufacturing a large-diameter silicon single crystal, comprising:
[0008] Perform a full-domain two-dimensional simulation of the crystal pulling process to obtain the full-domain temperature distribution, velocity field distribution, and initial solid-liquid interface value during the crystal pulling process under a preset crystal pulling device model and preset crystal pulling parameters;
[0009] Determining boundary conditions according to the global temperature distribution and the velocity field distribution, and performing a local three-dimensional simulation of the crystal pulling process based on the boundary conditions to determine a target solid-liquid interface value;
[0010] In the full-domain two-dimensional simulation, adjusting the preset crystal pulling parameters until the initial solid-liquid interface value and the target solid-liquid interface value are equal within a threshold value range, and using the adjusted preset crystal pulling parameters as reference crystal pulling parameters;
[0011] Simulating and calculating the simulated defects in the crystal pulling process according to the reference crystal pulling parameters;
[0012] Iteratively optimizing the reference crystal pulling parameters according to the simulated defects until the simulated defects meet preset conditions, and using the optimized reference crystal pulling parameters as target crystal pulling parameters;
[0013] Defect-free silicon single crystals are manufactured using the target crystal pulling parameters, wherein the target crystal pulling parameters include thermal field parameters and crystal pulling process parameters.
[0014] In some examples, performing a local three-dimensional simulation on the crystal pulling process based on the boundary condition to determine a target solid-liquid interface value includes:
[0015] Determining a simulation scene according to the boundary, and adding a simulated magnetic field to the simulation scene to perform a three-dimensional simulation of the crystal pulling process;
[0016] The target solid-liquid interface value is determined based on the thermal field parameters in the three-dimensional simulation process, the physical property parameters of the single crystal silicon, the turbulence model of the silicon melt and the flow boundary layer.
[0017] In some examples, the step of adjusting the preset crystal pulling parameters until the initial solid-liquid interface value is equal to the target solid-liquid interface value within a threshold value range includes the threshold value range being within 10%.
[0018] In some examples, the step of simulating and calculating the simulated defects in the crystal pulling process according to the reference crystal pulling parameters includes:
[0019] Determine the distribution of crystal pulling parameters in the initial state of crystal pulling;
[0020] Simulating defect distribution in an initial state of crystal pulling based on the crystal pulling parameter distribution;
[0021] The defect distribution is corrected according to the correction coefficient, and the defect clusters in the initial state of crystal pulling are determined based on the corrected defect distribution.
[0022] In some examples, the defect distribution includes interstitial point defect concentration and vacancy point defect concentration;
[0023] The correcting the defect distribution according to the correction coefficient comprises:
[0024] A correction coefficient is determined according to historical data, and at least one of the interstitial atom point defect concentration and the vacancy point defect concentration is corrected based on the correction coefficient.
[0025] In some examples, when correcting the point defect concentration of the interstitial atoms, the correction coefficient is greater than or equal to 1.0 and less than or equal to 1.3.
[0026] In some examples, the preset crystal pulling parameters include material viscosity and thermal conductivity of the melt;
[0027] The adjusting the preset crystal pulling parameters until the initial solid-liquid interface value and the target solid-liquid interface value are equal within a threshold value range includes:
[0028] The material viscosity value and / or the thermal conductivity are adjusted until the initial solid-liquid interface value and the target solid-liquid interface value are equal within a threshold value range.
[0029] In some examples, the reference crystal pulling parameters are iteratively optimized according to the simulated defects until the simulated defects meet preset conditions, including when the simulated defects meet COP and P-band (V-Cluster>25 nm), Pv (V-Cluster=12-25 nm), Pi (V-Cluster<12 nm and I-Cluster<0.5 nm), and LDP (I-Cluster<0.5 nm), and the optimized reference crystal pulling parameters are used as target crystal pulling parameters.
[0030] In a second aspect, an embodiment of the present invention provides a system for pulling a large-diameter silicon single crystal, comprising:
[0031] A parameter acquisition module is used to perform a global two-dimensional simulation of the crystal pulling process, and obtain the global temperature distribution, velocity field distribution, and initial solid-liquid interface value during the crystal pulling process under a preset crystal pulling device model and preset crystal pulling parameters;
[0032] A first determination module is used to determine boundary conditions according to the global temperature distribution and the velocity field distribution, and to perform a local three-dimensional simulation of the crystal pulling process based on the boundary conditions to determine a target solid-liquid interface value;
[0033] a first adjustment module, in the global two-dimensional simulation, adjusting the preset crystal pulling parameters until the initial solid-liquid interface value and the target solid-liquid interface value are equal within a threshold value range, and using the adjusted preset crystal pulling parameters as reference crystal pulling parameters;
[0034] A second determination module is configured to simulate and calculate the simulated defects in the crystal pulling process according to the reference crystal pulling parameters;
[0035] a second adjustment module, for iteratively optimizing the reference crystal pulling parameters according to the simulated defects until the simulated defects meet preset conditions, and using the optimized reference crystal pulling parameters as target crystal pulling parameters;
[0036] A crystal manufacturing module is used to manufacture defect-free silicon single crystals using the target crystal pulling parameters, wherein the target crystal pulling parameters include thermal field parameters and crystal pulling process parameters.
[0037] In a third aspect, a silicon single crystal comprises:
[0038] The silicon single crystal is manufactured based on the crystal pulling method for manufacturing a large-diameter silicon single crystal according to any one of the first aspects;
[0039] The number of defects with a vacancy defect size of 19 nm in any wafer obtained from the silicon single crystal is less than or equal to 25.
[0040] In a fourth aspect, an embodiment of the present invention provides an electronic device, comprising: a processor and a storage device; the processor is used to execute instructions stored in the storage device to implement the crystal pulling method for manufacturing a large-diameter silicon single crystal described in the first aspect.
[0041] In a fifth aspect, an embodiment of the present invention provides a computer storage medium, wherein the storage medium stores at least one instruction, and the at least one instruction is used to be executed by a processor to implement the crystal pulling method for manufacturing a large-diameter silicon single crystal as described in the first aspect.
[0042] The embodiment of the present invention provides a crystal pulling method, system, silicon single crystal and medium for manufacturing large-diameter silicon single crystals; on the one hand, based on the two-dimensional simulation, the three-dimensional simulation is used to determine the target solid-liquid interface value, and then the preset crystal pulling parameters are adjusted so that the solid-liquid interface value in the two-dimensional simulation process is the same as the solid-liquid interface value in the three-dimensional simulation, which can improve the simulation accuracy in the crystal pulling process. On the other hand, the boundary conditions of the three-dimensional simulation are determined according to the global temperature distribution and velocity field distribution obtained by the two-dimensional simulation, which can reduce the model size of the three-dimensional simulation, reduce the simulation parameters, and improve the simulation efficiency. On the other hand, the crystal pulling parameters are optimized according to the simulated defects during the simulation process, so that the target crystal pulling parameters obtained by the simulation can be directly used to produce defect-free wafers. Through the simulation, a large number of trial and error experiments can be avoided, which significantly reduces the experimental material and time costs. Further, the adjustment time in the production process can be reduced, and the production efficiency can be improved. Simple diagram description
[0043] FIG1 is a flow chart of a crystal pulling method for manufacturing a large-diameter silicon single crystal provided in an embodiment of the present invention.
[0044] FIG. 2 is a schematic diagram of temperature distribution of a two-dimensional simulation provided by an embodiment of the present invention.
[0045] FIG3 is a schematic diagram of a three-dimensional simulated temperature distribution provided by an embodiment of the present invention.
[0046] FIG. 4 is a flow chart of determining a simulated defect provided by an embodiment of the present invention.
[0047] FIG. 5 is a schematic diagram showing a defect comparison related to thermal stress and a correction coefficient provided by an embodiment of the present invention.
[0048] FIG. 6 is a flow chart of another crystal pulling method for manufacturing a large-diameter silicon single crystal provided in an embodiment of the present invention.
[0049] FIG. 7 is a comparison diagram of defect simulation results and experimental results of a crystal growth variable pulling speed test provided by an embodiment of the present invention.
[0050] FIG8 is a comparison diagram of defect simulation results and experimental results of a crystal growth constant pulling rate test provided by an embodiment of the present invention.
[0051] FIG. 9 is a schematic structural diagram of a crystal pulling device for manufacturing large-diameter silicon single crystals provided in an embodiment of the present invention.
[0052] FIG. 10 is a schematic diagram of the structure of an electronic device provided by an embodiment of the present invention.
[0053] The above drawings have illustrated clear embodiments of the present invention, which will be described in more detail later. These drawings and textual descriptions are not intended to limit the scope of the present invention in any way, but to illustrate the concept of the present invention to those with ordinary knowledge in the technical field of the present invention by referring to specific embodiments. Implementation
[0054] Exemplary embodiments are described in detail herein, examples of which are shown in the drawings. When the following description is about the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Instead, they are merely examples of devices and methods consistent with some aspects of the present invention as detailed in the attached claims.
[0055] In the field of semiconductor material preparation, especially in the growth process of single crystal silicon, crystal pulling simulation technology plays a vital role. Crystal pulling simulation technology predicts and optimizes physical phenomena in the crystal growth process, such as temperature distribution, solid-liquid interface shape, crystal stress and defect formation, through numerical simulation methods.
[0056] The simulation technology in the related art can predict the defect distribution in crystal growth, reduce defects and improve crystal quality by adjusting the crystal pulling parameters. Although the conventional crystal pulling simulation technology has made significant progress, it still faces some challenges, as follows:
[0057] Although the two-dimensional simulation techniques in related technologies can quickly calculate the basic parameters of crystal growth, such as temperature distribution and velocity field, they usually assume that crystal growth is axisymmetric and ignore the three-dimensional effects that may occur in the actual crystal growth process, such as complex phenomena caused by thermal stress, crystal stress and asymmetric flow. These factors may lead to the formation of internal defects in the crystal, such as void defects (COPs) and large lattice interstitial dislocation clusters (LDPs), which have a significant impact on the performance of semiconductor devices.
[0058] The three-dimensional simulation technology in related technologies can more accurately capture the complexity of crystal growth, including asymmetric flow and heat transfer, but compared with two-dimensional simulation, three-dimensional simulation needs to process more data and more complex boundary conditions, resulting in a significant increase in calculation time. In the actual production environment, quickly obtaining simulation results is crucial for the immediate adjustment and optimization of process parameters.
[0059] Secondly, the crystal pulling process involves multiple interdependent process parameters, such as pulling speed, temperature control, rotation speed, etc. The simulation technology in the relevant technology has limitations in dealing with the optimization of these parameters, and it is difficult to consider multiple related factors at the same time to find the best process conditions to produce high-quality single crystal silicon.
[0060] Based on this, the present invention first provides a crystal pulling method for manufacturing a large-diameter silicon single crystal. Referring to FIG. 1 , the crystal pulling method for manufacturing a large-diameter silicon single crystal may include steps S110 to S160.
[0061] In step S110, a global two-dimensional simulation is performed on the crystal pulling process to obtain the global temperature distribution, velocity field distribution and initial solid-liquid interface value in the crystal pulling process under a preset crystal pulling device model and preset crystal pulling parameters.
[0062] In some example implementations of the present invention, the above-mentioned crystal pulling process can first be subjected to a global two-dimensional simulation. Specifically, based on preset crystal pulling parameters, a two-dimensional simulation of the crystal pulling process can be performed on a preset crystal pulling device model to obtain the global temperature distribution, velocity field distribution and initial solid-liquid interface value in the above-mentioned crystal pulling process.
[0063] The global temperature distribution may include the temperature distribution of the crystal when it grows to each size during the crystal pulling process. For example, it includes the temperature distribution when the crystal grows to 100 mm, the temperature distribution when the crystal grows to 200 mm, etc.
[0064] When performing a two-dimensional simulation of the above-mentioned crystal pulling process, referring to Figure 2, the process of the crystal 21 in the crystal growth furnace can be simulated, wherein the crystal growth furnace may include a heat shield 22, a reflector, a crucible 24, a heater 25, a thermal insulation material 26, etc., and the raw material melt 23 of the crystal is contained in the crucible 24.
[0065] The crucible is a double-layer structure consisting of an inner quartz crucible and an outer graphite crucible, and is a container for accommodating melt, usually made of high-temperature resistant materials; a heater 25 is arranged around the outer side of the crucible to provide heat for crystal growth; a thermal insulation material is arranged around the outer side of the heater to reduce heat loss and keep the temperature in the furnace stable; a reflector is arranged above the crucible, and the reflector is used to block the high-temperature radiant heat from the silicon melt in the crucible or the heater or the side wall of the crucible during the crystal growth process, and to inhibit heat diffusion to the low-temperature water-cooled body near the solid-liquid interface serving as the crystal growth interface, and to control the axial temperature gradient of the center and the periphery of the crystal together with the water-cooled body. The element used to disperse heat and protect the crystal from direct radiation in the crystal growth furnace, and the temperature value superscripted thereon indicates the temperature range of different regions.
[0066] In the two-dimensional simulation process, the temperature distribution of each of the above components can be obtained as the global temperature distribution in the two-dimensional simulation process. When calculating the initial solid-liquid interface value based on the preset crystal pulling parameters, the position of the solid-liquid interface can be determined first. The solid-liquid interface is a key area for crystal growth, and its shape and stability directly affect the crystal quality and the formation of defects. Then, at the solid-liquid interface, the initial solid-liquid interface value is calculated based on the physical model and the numerical simulation results. The specific calculation process of the initial solid-liquid interface value can refer to the relevant technology and will not be repeated in this example implementation.
[0067] In step S120, boundary conditions are determined according to the global temperature distribution and velocity field distribution, and a local three-dimensional simulation of the crystal pulling process is performed based on the boundary conditions to determine the target solid-liquid interface value.
[0068] In some example implementations of the present invention, the boundary conditions of the three-dimensional simulation can be determined based on the global temperature distribution and velocity field distribution in the simulation results of the two-dimensional simulation process. Specifically, the boundary conditions may include temperature field and velocity field, etc. The boundary conditions can be specifically determined from the output of the two-dimensional simulation and are used to determine the boundary of the three-dimensional simulation, that is, to constrain the model size in the three-dimensional simulation process to reduce the overall computational complexity of the simulation process.
[0069] For example, as shown in Figure 3, for the growth of 300 mm large-size single crystal silicon crystals, since it uses a horizontal magnetic field to pull the crystal, the flow inside the melt is three-dimensional asymmetric. Therefore, in order to more accurately simulate the actual situation of 300 mm semiconductor single crystal silicon growth, three-dimensional simulation must be used. When obtaining the above-mentioned three-dimensional simulation model, a partial area can be obtained in the two-dimensional simulation model according to the boundary conditions as a three-dimensional simulation model.
[0070] In some examples of the present invention, after determining the boundary conditions of the three-dimensional simulation, the required horizontal magnetic field, CUSP magnetic field, etc. can be added, and the target solid-liquid interface value in the three-dimensional simulation process can be calculated based on the thermal field parameters, physical properties of single crystal silicon, turbulence model of silicon melt, flow boundary layer, etc. in the simulation process. Specifically, the thermal field parameters, physical properties of single crystal silicon, turbulence model of silicon melt, flow boundary layer and other parameter input values are used in the calculation software for calculating the target solid-liquid interface value to obtain the above-mentioned target solid-liquid interface value, wherein the specific type of the calculation software refers to the relevant technology and is not specifically limited in the implementation of this example.
[0071] Among them, thermal field parameters refer to a series of parameters that affect heat distribution and transfer during crystal growth. These parameters may include heater temperature, heat flux density, cooling rate, thermal conductivity of insulation materials, and the geometric structure of the crystal growth furnace. The physical properties of single crystal silicon refer to parameters that describe the physical and chemical properties of single crystal silicon, such as thermal conductivity, specific heat capacity, density, melting point, crystal structure, and doping concentration. Turbulence model is a mathematical model used to describe and predict turbulent flow, which takes into account factors such as fluid viscosity, velocity distribution, and temperature gradient. The flow boundary layer refers to the fluid layer near the solid surface, in which the velocity of the fluid gradually transitions from zero (on the solid surface) to the free flow velocity. In crystal growth, the behavior of the flow boundary layer affects heat transfer, quality transfer, and defect transport. Optimizing the characteristics of the flow boundary layer, such as thickness and velocity distribution, can help control the quality and rate of crystal growth.
[0072] In step S130, in the global two-dimensional simulation, the preset crystal pulling parameters are adjusted until the initial solid-liquid interface value and the target solid-liquid interface value are equal within a threshold value range, and the adjusted preset crystal pulling parameters are used as reference crystal pulling parameters.
[0073] In some exemplary implementations of the present invention, after determining the target solid-liquid interface value, the preset crystal pulling parameters can be adjusted based on the target solid-liquid interface value to perform parameter fitting on the three-dimensional simulation process, so that the initial solid-liquid interface value is equal to the target solid-liquid interface value within the threshold value range, and the adjusted preset crystal pulling parameters are used as reference crystal pulling parameters. Specifically, the material viscosity value and / or thermal conductivity of the melt in the crystal pulling parameters can be adjusted to perform parameter fitting on the three-dimensional simulation process.
[0074] Among them, the above threshold value range is used to characterize the allowable error range, which can be within the error range of 10%, or it can be a specific value, such as 1~2 mm. Of course, the specific value can be customized according to user needs and will not be repeated in this example implementation.
[0075] In step S140, simulated defects in the crystal pulling process are simulated and calculated based on reference crystal pulling parameters.
[0076] In some example implementations of the present invention, after the above-mentioned reference crystal pulling parameters are calculated, the simulated defects in the crystal pulling process can be simulated according to the above-mentioned reference crystal pulling parameters. Specifically, initial steady-state calculation, defect cluster calculation, etc. can be performed based on two-dimensional simulation according to the above-mentioned reference crystal pulling parameters to simulate the simulated defects in the above-mentioned crystal pulling process.
[0077] In step S150, the reference crystal pulling parameters are iteratively optimized according to the simulated defects until the simulated defects meet the preset conditions, and the optimized reference crystal pulling parameters are used as the target crystal pulling parameters.
[0078] In an example implementation disclosed, after obtaining simulated defects, the reference crystal pulling parameters can be adjusted based on the simulated defects, and the simulated defects can be calculated again, and the process of adjusting the reference crystal pulling parameters can be executed cyclically, for example, until the simulated defects meet preset conditions, wherein the preset conditions can be that the obtained simulated defects are minimal, that is, the optimal reference crystal pulling parameters are obtained, or the number of the simulated defects can meet the process requirements. The process requirements can be set according to user requirements and are not elaborated in this example implementation.
[0079] It should be noted that in adjusting the reference crystal pulling parameters, part or all of the reference crystal pulling parameters can be adjusted based on crystal pulling experience and V / G theory. The specific adjusted parameters can also be set according to user needs, which will not be elaborated in this example implementation.
[0080] In step S160, a defect-free silicon single crystal is manufactured using target crystal pulling parameters, where the target crystal pulling parameters include thermal field parameters and crystal pulling process parameters.
[0081] After obtaining the above target crystal pulling parameters, a crystal pulling process can be performed based on the above target crystal pulling parameters to obtain a defect-free single crystal, wherein the above target crystal pulling parameters include thermal field parameters and crystal pulling process parameters, wherein the crystal pulling process parameters may include pulling speed, temperature control, rotation speed, gas environment, crucible position, dopant type, concentration and addition time, crystal diameter, cooling rate, etc. during the crystal pulling process. The specific contents of the crystal pulling process parameters may also be added or deleted according to the process requirements, and will not be described in detail in this exemplary implementation.
[0082] The crystal pulling method for manufacturing a large-diameter silicon single crystal provided by an embodiment of the present invention, on the one hand, uses three-dimensional simulation to determine the target solid-liquid interface value on the basis of two-dimensional simulation, and then adjusts the preset crystal pulling parameters so that the solid-liquid interface value in the two-dimensional simulation process is the same as the solid-liquid interface value in the three-dimensional simulation, which can improve the simulation accuracy in the crystal pulling process. On the other hand, the boundary conditions of the three-dimensional simulation are determined according to the global temperature distribution obtained by the two-dimensional simulation, which can reduce the model size of the three-dimensional simulation, reduce the simulation parameters, and improve the simulation efficiency. On the other hand, the crystal pulling parameters are optimized according to the simulated defects during the simulation process, so that the target crystal pulling parameters obtained by simulation can be directly used to produce defect-free wafers. Through simulation, a large number of trial and error experiments can be avoided, which significantly reduces the experimental material and time costs. Further, the adjustment time in the production process can be reduced, and the production efficiency can be improved.
[0083] In some exemplary embodiments of the present invention, the preset crystal pulling parameters may include the material viscosity and thermal conductivity of the melt, the thermal field conditions during the simulation, and the crystal pulling process parameters.
[0084] In the process of adjusting the preset crystal pulling parameters until the initial solid-liquid interface value and the target solid-liquid interface value are equal within the threshold value range, and using the adjusted preset crystal pulling parameters as reference crystal pulling parameters, the parameters that affect the solid-liquid interface value can be adjusted, and the parameters that affect the solid-liquid interface value can be obtained based on experience or experiments, and the specific acquisition process is not described in detail here. For example, one or more of the viscosity value and thermal conductivity of the above-mentioned material can be adjusted so that the above-mentioned initial solid-liquid interface value and the above-mentioned target solid-liquid interface value are equal within the threshold value range.
[0085] For example, the material viscosity values of the above-mentioned crystal at different lengths during the growth process can be adjusted so that the above-mentioned initial solid-liquid interface value and the above-mentioned target solid-liquid interface value are equal within the threshold value range. For example, Table 1 is the material viscosity values of the melt set at different crystal lengths for fitting the initial solid-liquid interface value and the above-mentioned target solid-liquid interface value within the threshold value range.
[0086] Table 1 Crystal length (mm) 100 150 200 350 500 700 900 1100 1300 1500 1700 1800 1900 Material viscosity value (Pa-s) 0.04 0.07 0.1 0.12 0.12 0.12 0.12 0.12 0.1 0.04 0.04 0.04 0.0004
[0087] According to Table 1, at different crystal lengths, in order to make the above initial solid-liquid interface value equal to the above target solid-liquid interface value, it is necessary to set different or the same melt material viscosity values, that is, it is necessary to configure different melt viscosity values according to the current length of the crystal generated.
[0088] In some example implementations of the present invention, referring to FIG. 4 , when determining simulated defects in the crystal pulling process according to the adjusted preset crystal pulling parameters, steps S410 to S440 may be included.
[0089] In step S410, the distribution of crystal pulling parameters in the initial state of crystal pulling is determined.
[0090] In some exemplary embodiments of the present invention, the initial state of crystal pulling may be when the crystal length is 100 mm, or when the crystal is 200 mm. The specific length of the crystal in the initial state of crystal pulling may be customized according to user needs and will not be elaborated in this exemplary embodiment.
[0091] Among them, the crystal pulling parameter distribution may include the temperature distribution, speed distribution in the crystal pulling furnace at the initial state of crystal pulling, and stress distribution in the crystal.
[0092] Specifically, crystal simulation software can be used to perform initial steady-state calculations on the initial state of the above-mentioned crystal pulling. It should be noted that the thermal stress distribution can be calculated simultaneously during the calculation to eliminate the influence of thermal stress on defects and further improve the accuracy of the target crystal pulling parameters.
[0093] For example, referring to FIG. 5 , “Without Stress” means that the effect of thermal stress on the point defect concentration is not considered during the simulation process, and “With Stress” means that the effect of thermal stress is considered during the simulation, and it is considered that thermal stress can change the distribution and concentration of point defects.
[0094] Among them, the top and the tail represent two different regions in the crystal growth process, which can be the two ends of the crystal. The lattice gap radius Rv [nm] represents the volume or size of the gap site in the lattice, which is measured in nanometers (nm). As shown in Figure 5, thermal stress will change the distribution and concentration of point defects. Therefore, when determining the parameter distribution, this example implementation calculates the thermal stress distribution, which can make the target crystal pulling parameters more accurate and more in line with the actual experimental data.
[0095] In step S420, the defect distribution in the initial state of crystal pulling is simulated based on the parameter distribution.
[0096] In some example implementations of the present invention, the defect distribution includes the point defect concentration of interstitial atoms and the vacancy point defect concentration. After obtaining the above parameter distribution, the steady-state initial point defect distribution in the crystal can be calculated based on the above parameter distribution. The specific calculation method can refer to the relevant technology and will not be described in detail in this example implementation.
[0097] In step S430, the defect distribution is corrected according to the correction coefficient, and the defect clusters in the initial state of crystal pulling are determined based on the corrected defect distribution.
[0098] In some examples of the present invention, a correction coefficient can be obtained based on historical data. Specifically, the correction coefficient can be determined based on a specific historical defect distribution and an actual defect distribution in historical experiments, and the defect distribution can be corrected using the correction coefficient.
[0099] Among them, the above correction coefficients may include a correction coefficient for the point defect concentration of interstitial atoms and a correction coefficient for the point defect concentration of vacancy points. The specific values of the correction coefficients can be obtained based on a large amount of historical data, and the specific data will not be repeated.
[0100] In some examples, assuming that the correction coefficient includes a correction coefficient of the point defect concentration Ci of interstitial atoms, the correction coefficient is approximately greater than or equal to 1.0 and less than or equal to 1.3. Preferably, the correction coefficient can be increased to 1.1, and the point defect concentration Ci multiplied by a coefficient of 1.1 can achieve a defect distribution result consistent with the experiment. The point defect concentration of the interstitial atoms can be corrected according to the correction coefficient to obtain a more accurate defect distribution, thereby obtaining a target crystal pulling parameter with higher accuracy.
[0101] 5 , the adjusted point defect concentration of interstitial atoms (Ci adjusted) indicates that the point defect concentration of interstitial atoms has been adjusted based on comparative analysis of simulation results and experimental data, which can more accurately reflect the physical phenomena in the actual crystal growth process.
[0102] After correcting the above-mentioned defect distribution, defect cluster calculation can be performed on the above-mentioned initial state of crystal pulling based on the corrected defect distribution. Specifically, the defect cluster calculation function in the crystal simulation software can be used to simulate how point defects aggregate to form larger defect clusters. The specific calculation process can refer to relevant technologies and will not be described in detail here.
[0103] In step S440, simulated defects in the crystal pulling process are determined based on defect clusters in the initial state of crystal pulling and reference crystal pulling parameters.
[0104] In some exemplary embodiments of the present invention, after determining the defect clusters in the initial state of the crystal pulling, simulated defects in the crystal pulling process can be determined based on the defect clusters in the initial state of the crystal pulling and reference crystal pulling parameters.
[0105] Specifically, the defect clusters in the initial state of the crystal pulling and the reference crystal pulling parameters can be used as input parameters, and the crystal simulation software CGSim can be used to obtain the simulated defects in the crystal pulling process.
[0106] After obtaining the above-mentioned crystal pulling defects, the above-mentioned reference crystal pulling parameters can be adjusted according to the above-mentioned simulated defects until the above-mentioned simulated defects meet the preset conditions.
[0107] In some examples, the preset conditions may be COP (V-Cluster>25 nm), Pv (V-Cluster=12-25 nm), Pi (V-Cluster<12 nm and I-Cluster<0.5 nm), and LDP (I-Cluster<0.5 nm).
[0108] Among them, COP (Crystal Originated Particle) defect represents vacancy clusters, Pv defect refers to defect-free regions dominated by vacancies, Pi defect refers to defect-free regions dominated by interstitial atoms, LDP defect refers to large dislocation pits caused by interstitial atoms, I-Cluster (Interstitial Cluster) represents the size of interstitial clusters, and V-Cluster (Vacancy Cluster) represents the size of vacancy defects.
[0109] It should be noted that the above-mentioned preset conditions are exemplary descriptions, and the specific form of the preset conditions can be set according to the process requirements and will not be elaborated in this example implementation.
[0110] The thermal field parameters and / or crystal pulling process parameters in the above-mentioned reference crystal pulling parameters are adjusted. When the above-mentioned simulated defects meet the preset conditions, the adjusted reference crystal pulling parameters are output as target crystal pulling parameters and used as crystal pulling parameters for producing crystal rods. For example, the target crystal pulling parameters may include a maximum Gaussian plane position (MGP) greater than or equal to -200 mm and less than or equal to 150 mm; a magnetic field intensity (MI) greater than or equal to 2500 G and less than or equal to 3800 G; a crystal rotation speed (S / R) greater than or equal to 8 rpm and less than or equal to 12 rpm; a crucible rotation speed greater than or equal to -0.2 rpm and less than or equal to 2.5 rpm; an argon gas flow rate (ArGFR) greater than or equal to 60 slm and less than or equal to 220 slm; and a furnace pressure (FP) greater than or equal to 20 Tor and less than or equal to 100 Tor.
[0111] It should be noted that the types and specific values of the above-mentioned target crystal pulling parameters are only exemplary descriptions, and the types and specific values of the target crystal pulling parameters can also be customized according to user needs, which will not be elaborated here.
[0112] The following is an explanation of the crystal pulling method for manufacturing a large-diameter silicon single crystal provided by an embodiment of the present invention with reference to FIG. 6 . Specifically, the method may include the following steps:
[0113] Step S610, performing a global two-dimensional simulation of the crystal pulling process to obtain the global temperature distribution, velocity field distribution and initial solid-liquid interface value during the crystal pulling process under a preset crystal pulling device model and preset crystal pulling parameters.
[0114] Step S620, determining boundary conditions according to the global temperature distribution and velocity field distribution, and performing a local three-dimensional simulation of the crystal pulling process based on the boundary conditions to determine the target solid-liquid interface value.
[0115] Step S630, adjusting the melt viscosity and / or thermal conductivity.
[0116] Step S640, determining whether the initial solid-liquid interface value is equal to the target solid-liquid interface value.
[0117] If not, execute step S630; if so, execute step S650 to determine the parameter distribution in the initial state of crystal pulling.
[0118] Step S660, determining the defect distribution in the initial state of crystal pulling based on the parameter distribution.
[0119] Step S670, correcting the defect distribution according to the correction coefficient, and determining the defect clusters in the initial state of crystal pulling based on the corrected defect distribution.
[0120] Step S680, determining simulated defects during the crystal pulling process based on defect clusters in the initial state of crystal pulling and reference crystal pulling parameters.
[0121] Step S690, adjusting thermal field parameters and crystal pulling process parameters according to simulated defects.
[0122] Step S611, determine whether the simulated defect meets the preset conditions.
[0123] If not, execute step S690; if so, execute step S612 to output the target crystal pulling parameters.
[0124] It should be noted that the specific details of the above steps S610 to S612 have been described in detail above, so they will not be repeated here.
[0125] In some examples, FIG7 is a comparison diagram of defect simulation results and experimental results of a crystal growth variable pulling speed test provided by an embodiment of the present invention. Referring to FIG7 , from the comparison results, the distribution of crystal axial defect simulation results is consistent with the experimental results, and the pulling speed in the defect-free area of the simulation result has an error of less than 1% compared with the actual pulling speed.
[0126] FIG8 is a comparison diagram of defect simulation results and experimental results of a crystal growth constant pulling speed test provided by an embodiment of the present invention. Referring to FIG8 , from the comparison results, it can be seen that the radial defect simulation results of the crystal are consistent with the experimental results, and the consistency between the radial defect simulation results and the experimental results is more than 90%. It can be seen from FIG8 that the simulation results of the 19 nm local laser scattering (LLS) defect are also highly consistent with the experimental results.
[0127] 7 and 8 , it can be seen that the simulation results obtained by the crystal pulling method for manufacturing a large-diameter silicon single crystal provided in an embodiment of the present invention are highly consistent with the experimental results, and thus the accuracy of the obtained target crystal pulling parameters is also high.
[0128] In summary, the crystal pulling method for manufacturing a large-diameter silicon single crystal provided by the embodiment of the present invention, on the one hand, uses three-dimensional simulation to determine the target solid-liquid interface value on the basis of two-dimensional simulation, and then adjusts the preset crystal pulling parameters so that the solid-liquid interface value in the two-dimensional simulation process is the same as the solid-liquid interface value in the three-dimensional simulation, which can improve the simulation accuracy in the crystal pulling process. On the other hand, the boundary conditions of the three-dimensional simulation are determined according to the global temperature distribution obtained by the two-dimensional simulation, which can reduce the model size of the three-dimensional simulation, reduce the simulation parameters, and improve the simulation efficiency. On the other hand, the crystal pulling parameters are optimized according to the simulated defects during the simulation process, so that the target crystal pulling parameters obtained by simulation can be directly used to produce defect-free wafers. Through simulation, a large number of trial and error experiments can be avoided, which significantly reduces the experimental material and time costs. Further, the adjustment time in the production process can be reduced, and the production efficiency can be improved. Furthermore, by using the correction coefficient to adjust the above-mentioned defect distribution, the accuracy of the target crystal pulling parameters obtained according to the simulated defects can be higher, so that the quality of the crystal rod generated according to the target crystal pulling parameters is higher.
[0129] Furthermore, the present invention also provides a crystal rod, which is obtained by pulling crystal according to the target crystal pulling parameters obtained by the above-mentioned crystal pulling method for manufacturing large-diameter silicon single crystals, and the number of defects with a vacancy defect size of 19 nm in any wafer obtained in the crystal rod is less than or equal to 25. The specific process of the above-mentioned crystal pulling method for manufacturing large-diameter silicon single crystals has been described in detail above, so it will not be repeated here.
[0130] It should be noted that the specific value of the vacancy defect size and the number of defects of any wafer obtained in the crystal rod can also be set according to user needs. For example, the number of defects in the wafer with a vacancy defect size of 20 nm can be less than or equal to 24, the number of defects in the wafer with a vacancy defect size of 35 nm can be less than or equal to 12, etc., which will not be repeated in this example.
[0131] Furthermore, the present invention also provides a crystal pulling device for manufacturing a large-diameter silicon single crystal. As shown in FIG. 9 , the crystal pulling device 900 for manufacturing a large-diameter silicon single crystal may include a parameter acquisition module 910, a first determination module 920, a first adjustment module 930, a second determination module 940, and a second adjustment module 950. Wherein:
[0132] The parameter acquisition module 910 can perform a global two-dimensional simulation of the crystal pulling process to obtain the global temperature distribution, velocity field distribution and initial solid-liquid interface value in the crystal pulling process under a preset crystal pulling device model and preset crystal pulling parameters.
[0133] The first determination module 920 can be used to determine boundary conditions according to the global temperature distribution and the velocity field distribution, and perform a local three-dimensional simulation of the crystal pulling process based on the boundary conditions to determine a target solid-liquid interface value.
[0134] The first adjustment module 930 can be used to adjust the preset crystal pulling parameters in the global two-dimensional simulation until the initial solid-liquid interface value and the target solid-liquid interface value are equal within a threshold value range, and use the adjusted preset crystal pulling parameters as reference crystal pulling parameters.
[0135] The second determination module 940 is used to iteratively optimize the reference crystal pulling parameters according to the simulated defects until the simulated defects meet preset conditions, and use the optimized reference crystal pulling parameters as target crystal pulling parameters.
[0136] The second adjustment module 950 can be used to adjust the reference crystal pulling parameters according to the simulated defects until the simulated defects meet the preset conditions, and use the adjusted reference crystal pulling parameters as the target crystal pulling parameters.
[0137] The crystal manufacturing module 960 can be used to manufacture defect-free silicon single crystals using the target crystal pulling parameters, and the target crystal pulling parameters include thermal field parameters and crystal pulling process parameters.
[0138] In some examples, the first determination module 920 can also be used to determine a simulation scene based on the boundary, and add a simulated magnetic field to the simulation scene to perform a three-dimensional simulation of the crystal pulling process; based on the thermal field parameters in the three-dimensional simulation process, the physical properties of single crystal silicon, the turbulence model of the silicon melt, and the flow boundary layer, the target solid-liquid interface value is determined.
[0139] In some examples, the threshold value range is within 10%.
[0140] In some examples, the first adjustment module 930 can also be used to determine the parameter distribution in the initial state of crystal pulling; determine the defect distribution in the initial state of crystal pulling based on the parameter distribution; correct the defect distribution according to the correction coefficient, and determine the defect cluster in the initial state of crystal pulling based on the corrected defect distribution; determine the simulated defects in the crystal pulling process according to the defect cluster in the initial state of crystal pulling and the reference crystal pulling parameters. The parameter distribution includes the temperature distribution in the crystal pulling furnace and the speed distribution and the stress distribution in the crystal in the initial state of crystal pulling.
[0141] In some examples, the first adjustment module 930 can also be used to determine a correction coefficient based on historical data, and correct at least one of the interstitial atom point defect concentration and the vacancy point defect concentration based on the correction coefficient.
[0142] In some examples, when the point defect concentration of the interstitial atoms is corrected, the correction coefficient is greater than or equal to 1.0 and less than or equal to 1.3.
[0143] In some examples, the preset crystal pulling parameters include the material viscosity value and thermal conductivity of the melt, and the first adjustment module 930 can also adjust the material viscosity value and / or thermal conductivity until the initial solid-liquid interface value is equal to the target solid-liquid interface value within a threshold value range.
[0144] In some examples, the second determination module 940 can also be used to adjust thermal field parameters and / or crystal pulling process parameters until the simulated defects meet preset conditions.
[0145] In some examples, the reference crystal pulling parameters are iteratively optimized according to the simulated defects until the simulated defects meet preset conditions, including when the simulated defects meet COP and P-band (V-Cluster>25 nm), Pv (V-Cluster=12-25 nm), Pi (V-Cluster<12 nm and I-Cluster<0.5 nm), and LDP (I-Cluster<0.5 nm), and the optimized reference crystal pulling parameters are used as target crystal pulling parameters.
[0146] Please refer to FIG. 10 , which illustrates a block diagram of an electronic device provided by an exemplary embodiment of the present invention. In some examples, the electronic device may be at least one of a smart phone, a smart watch, a desktop computer, a laptop computer, a virtual reality terminal, an augmented reality terminal, a wireless terminal, and a laptop computer. The electronic device has a communication function and can be connected to a wired network or a wireless network. The electronic device may generally refer to one of a plurality of terminals. A person with ordinary knowledge in the technical field to which the present invention belongs may know that the number of the above terminals may be more or less. It is understandable that the electronic device undertakes the calculation and processing work of the technical solution of the present invention, and the embodiments of the present invention do not limit this.
[0147] It should be understood that the above device embodiments are only illustrative, and the device of the present invention can also be implemented in other ways. For example, the division of units / modules in the above embodiments is only a logical function division, and there may be other division methods in actual implementation. For example, multiple units, modules or components can be combined, or can be integrated into another system, or some features can be ignored or not executed.
[0148] In addition, unless otherwise specified, each functional unit / module in each embodiment of the present invention may be integrated into one unit / module, each unit / module may exist physically separately, or two or more units / modules may be integrated together. The above-mentioned integrated unit / module may be implemented in the form of hardware or in the form of a software program module.
[0149] If the integrated unit / module is implemented in the form of hardware, the hardware may be a digital circuit, an analog circuit, etc. The physical implementation of the hardware structure includes but is not limited to transistors, memristors, etc. Unless otherwise specified, the processor may be any appropriate hardware processor, such as a central processing unit (CPU), a graphics processing unit (GPU), a field programmable gate array (FPGA), a digital signal processing technology (DSP), and an application specific integrated circuit (ASIC), etc. Unless otherwise specified, the storage unit may be any appropriate magnetic storage medium or magneto-optical storage medium, such as Resistive Random Access Memory (RRAM), Dynamic Random Access Memory (DRAM), Static Random-Access Memory (SRAM), Enhanced Dynamic Random Access Memory (EDRAM), High-Bandwidth Memory (HBM), Hybrid Memory Cube (HMC), etc.
[0150] If the integrated unit / module is implemented in the form of a software program module and sold or used as an independent product, it can be stored in a computer-readable storage device. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the relevant technology, or all or part of the technical solution can be embodied in the form of a software product. The computer software product is stored in a storage device, including multiple instructions for enabling a computer device (which can be a personal computer, server or network device, etc.) to execute all or part of the steps of the methods of various embodiments of the present invention. The aforementioned storage device includes: USB flash drives, read-only memory (ROM), random access memory (RAM), mobile hard drives, magnetic disks or optical disks, and other media that can store program codes.
[0151] As shown in FIG. 10 , the electronic device 1000 may include: at least one processor 1010 , a storage 1020 , and a communication interface 1030 .
[0152] The storage device 1020 is used to store programs. Specifically, the programs may include program codes, and the program codes include computer operation instructions.
[0153] The storage 1020 may include a high-speed RAM storage, and may also include a non-volatile memory, such as at least one disk memory.
[0154] The processor 1010 is used to execute the computer execution instructions stored in the storage 1020 to implement the method for pulling a large-diameter silicon single crystal described in the above method embodiment. The processor 1010 may be a central processing unit (CPU), or an application specific integrated circuit (ASIC), or one or more integrated circuits configured to implement the embodiments of the present invention.
[0155] The electronic device 1000 may also include a communication interface 1030, so that it can communicate and interact with external devices through the communication interface 1030. In specific implementation, if the communication interface 1030, the storage 1020 and the processor 1010 are implemented independently, the communication interface 1030, the storage 1020 and the processor 1010 can be connected to each other through a bus and complete the communication between each other. The bus can be an Industry Standard Architecture (ISA) bus, a Peripheral Component (PCI) bus or an Extended Industry Standard Architecture (EISA) bus, etc. The bus can be divided into an address bus, a data bus, a control bus, etc., but it does not mean that there is only one bus or one type of bus.
[0156] Preferably, in a specific implementation, if the communication interface 1030, the storage 1020 and the processor 1010 are integrated on a chip, the communication interface 1030, the storage 1020 and the processor 1010 can communicate through an internal interface.
[0157] The present invention also provides a computer-readable storage medium, which may include: a USB flash drive, a mobile hard drive, a read-only memory random access storage, a magnetic disk or an optical disk, and other media that can store program codes. Specifically, the computer-readable storage medium stores program instructions, and the program instructions are used in the crystal pulling method for manufacturing large-diameter silicon single crystals in the above-mentioned embodiment.
[0158] An embodiment of the present invention also provides a computer program product, which includes computer instructions, and the computer instructions are stored in a computer-readable storage medium; a processor of an electronic device reads the computer instructions from the computer-readable storage medium, and the processor executes the computer instructions, so that the electronic device executes to implement the crystal pulling method for manufacturing large-diameter silicon single crystals of each of the above-mentioned embodiments.
[0159] A person with ordinary knowledge in the technical field to which the present invention belongs should be aware that in one or more of the above examples, the functions described in the embodiments of the present invention can be implemented by hardware, software, solid or any combination thereof. When implemented by software, these functions can be stored in a computer-readable medium or transmitted as one or more instructions or codes on a computer-readable medium. Computer-readable media include computer storage media and communication media, wherein communication media include any media that facilitates the transmission of computer programs from one place to another. Storage media can be any available media that can be accessed by general or special computers.
[0160] In the above embodiments, the description of each embodiment has its own emphasis. For the part not described in detail in a certain embodiment, please refer to the relevant description of other embodiments. The technical features of the above embodiments can be combined arbitrarily. In order to make the description concise, all possible combinations of the technical features in the above embodiments are not described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0161] A person having ordinary knowledge in the art to which the present invention belongs will readily conceive of other embodiments of the present invention after considering the specification and practicing the invention claimed herein. The present invention is intended to cover any variation, use or adaptation of the present invention which follows the general principles of the present invention and includes common knowledge or commonly used technical means in the art to which the present invention belongs which are not claimed by the present invention.
[0162] It should be understood that the present invention is not limited to the precise structure described above and illustrated in the drawings, and various modifications and changes can be made without departing from the scope thereof. The scope of the present invention is limited only by the scope of the attached claims.
[0163] 21:Simulation crystal 22: Heat shield 23: Raw material melt 24: Crucible 25: Heater 26: Thermal insulation material 900: Crystal pulling device for manufacturing large diameter silicon single crystals 910: Parameter acquisition module 920: First confirmation module 930: First adjustment module 940: Second confirmation module 950: Second adjustment module 960: Crystal Manufacturing Module 1000: Electronic equipment 1010: Processor 1020: Storage 1030: Communication interface
Claims
1. A method for manufacturing large-diameter silicon single crystals, comprising: A global two-dimensional simulation of the crystal pulling process is performed to obtain the global temperature distribution, velocity field distribution, and initial solid-liquid interface value under a preset crystal pulling device model and preset crystal pulling parameters. Boundary conditions are determined based on the global temperature distribution and velocity field distribution, and a local three-dimensional simulation of the crystal pulling process is performed based on these boundary conditions to determine the target solid-liquid interface value. In the global two-dimensional simulation, the preset crystal pulling parameters are adjusted until the initial solid-liquid interface value and the target solid-liquid interface value are equal within a threshold value range, and the adjusted preset crystal pulling parameters are used as reference crystal pulling parameters. Simulated defects in the crystal pulling process are calculated based on the reference crystal pulling parameters. The reference crystal pulling parameters are iteratively optimized based on the simulated defects until the simulated defects meet preset conditions, and the optimized reference crystal pulling parameters are used as target crystal pulling parameters. Defect-free silicon single crystals are manufactured using the target crystal pulling parameters, which include thermal field parameters and crystal pulling process parameters.
2. The crystal pulling method as described in claim 1, wherein, The step of performing a local three-dimensional simulation of the crystal pulling process based on the boundary conditions to determine the target solid-liquid interface value includes: determining a simulation scene based on the boundary, and adding a simulated magnetic field to the simulation scene to perform a three-dimensional simulation of the crystal pulling process; and determining the target solid-liquid interface value based on the thermal field parameters, physical property parameters of single-crystal silicon, turbulence model of silicon melt, and flow boundary layer during the three-dimensional simulation process.
3. The crystal pulling method as described in claim 1, wherein, The step of adjusting the preset crystal pulling parameters until the initial solid-liquid interface value and the target solid-liquid interface value are equal within a threshold value range includes a threshold value range of less than 10%.
4. The crystal pulling method as described in claim 1, wherein, The step of simulating and calculating the simulated defects in the crystal pulling process based on the reference crystal pulling parameters includes: determining the crystal pulling parameter distribution at the initial crystal pulling state; simulating the defect distribution at the initial crystal pulling state based on the crystal pulling parameter distribution; correcting the defect distribution according to a correction coefficient, and determining the defect clusters at the initial crystal pulling state based on the corrected defect distribution; and determining the simulated defects in the crystal pulling process based on the defect clusters at the initial crystal pulling state and the reference crystal pulling parameters.
5. The crystal pulling method as described in claim 4, wherein, The defect distribution includes the point defect concentration and vacancy defect concentration of interstitial atoms; the step of correcting the defect distribution according to the correction coefficient includes: determining the correction coefficient based on historical data, and correcting at least one of the point defect concentration and vacancy defect concentration of interstitial atoms based on the correction coefficient.
6. The crystal pulling method as described in claim 5, wherein, When correcting for the point defect concentration of the interstitial atoms, the correction factor is greater than or equal to 1.0 and less than or equal to 1.
3.
7. The crystal pulling method as described in claim 1, wherein, The preset crystal pulling parameters include the material viscosity and thermal conductivity of the melt; adjusting the preset crystal pulling parameters until the initial solid-liquid interface value and the target solid-liquid interface value are equal within a threshold value range includes: adjusting the material viscosity and / or the thermal conductivity until the initial solid-liquid interface value and the target solid-liquid interface value are equal within a threshold value range.
8. The crystal pulling method as described in claim 1, wherein, The step of iteratively optimizing the reference crystal pulling parameters based on the simulated defects until the simulated defects meet preset conditions includes the simulated defects meeting COP and P-band (V-Cluster > 25 nm), Pv (V-Cluster = 12-25 nm), Pi (V-Cluster < 12 nm and I-Cluster < 0.5 nm), LDP (I-Cluster < 0.5 nm), and then using the optimized reference crystal pulling parameters as the target crystal pulling parameters.
9. A crystal pulling system for manufacturing large-diameter silicon single crystals, comprising: A parameter acquisition module is used to perform a full-domain two-dimensional simulation of the crystal pulling process, acquiring the full-domain temperature distribution, velocity field distribution, and initial solid-liquid interface value during the crystal pulling process under a preset crystal pulling device model and preset crystal pulling parameters; a first determination module is used to determine boundary conditions based on the full-domain temperature distribution and the velocity field distribution, and to perform a local three-dimensional simulation of the crystal pulling process based on the boundary conditions to determine the target solid-liquid interface value; a first adjustment module is used to adjust the preset crystal pulling parameters in the full-domain two-dimensional simulation until the initial solid-liquid interface value and the target solid-liquid interface value are equal within a threshold value range, and to use the adjusted preset crystal pulling parameters as reference crystal pulling parameters; a second determination module is used to simulate and calculate simulated defects in the crystal pulling process based on the reference crystal pulling parameters; a second adjustment module is used to iteratively optimize the reference crystal pulling parameters based on the simulated defects until the simulated defects meet preset conditions, and to use the optimized reference crystal pulling parameters as the target crystal pulling parameters; A crystal manufacturing module for manufacturing defect-free silicon single crystals using the target crystal pulling parameters, which include thermal field parameters and crystal pulling process parameters.
10. A silicon single crystal, comprising: The silicon single crystal is manufactured based on the crystal pulling method for manufacturing large-diameter silicon single crystals as described in any one of claims 1 to 8; The number of defects with a vacancy size of 19 nm in any wafer obtained from the silicon single crystal is less than or equal to 25.
11. An electronic device, the electronic device comprising: Processor and storage; The processor is used to execute instructions stored in the memory to implement the crystal pulling method for manufacturing large-diameter silicon single crystals as described in any one of claims 1 to 8.
12. A computer storage medium storing at least one instruction for execution by a processor to implement a crystal pulling method for manufacturing large-diameter silicon single crystals as described in any one of claims 1 to 8.