RF power output circuit and semiconductor process equipment

Abstract

A radio frequency (RF) power output circuit and semiconductor manufacturing equipment, relating to the field of semiconductor technology, can improve the problem of low cavity matching caused by differences in RF systems, thereby improving thin film performance. The RF power output circuit includes: an RF power supply module, including a first RF power supply and a second RF power supply; a power distribution module, including a first input terminal, a second input terminal, and multiple output terminals corresponding one-to-one with multiple process cavities; the first input terminal is electrically connected to the first RF power supply, the second input terminal is electrically connected to the second RF power supply, and each output terminal is used to be electrically connected to its corresponding process cavity; the power distribution module is used to evenly distribute the energy of a first RF signal received at the first input terminal and / or the energy of a second RF signal received at the second input terminal to each process cavity.

Description

[Technical Field]

[0001] This application relates to the field of semiconductor technology, and in particular to a radio frequency power output circuit and semiconductor manufacturing equipment. [Previous Technology]

[0002] As the critical dimension (CD) of components continues to decrease, PEALD (Plasma Enhanced Atomic Layer Deposition) technology, as a process method for depositing semiconductor thin films with good uniformity, is very important in processes below 28nm. Compared with Physical Vapor Deposition (PVD) and Plasma Enhanced Chemical Vapor Deposition (PECVD), PEALD-deposited films have good conformal properties, precise thickness control, and excellent filling ability for high aspect ratio pattern structures. In addition, the lower process temperature of PEALD is also beneficial to process integration. However, the slow reaction speed of various ALD (atomic layer deposition) methods, such as thermal ALD and PEALD, results in low throughput, which limits their application in mass production in the integrated circuit industry.

[0003] To improve production capacity, PEALD multi-wafer chambers in batch-type, twin-chamber, and quadruple-chamber configurations are widely used in the preparation of oxides (e.g., SiO2). During the fabrication process, multiple wafers can be placed simultaneously within the chamber, and the deposition process can be completed in one go; compared to single-wafer processes, wafer transfer time is saved, significantly increasing production capacity.

[0004] With the continuous advancement of semiconductor technology, multi-wafer processing systems (MWMS) are placing increasingly stringent requirements on the performance of thin films (e.g., thickness uniformity, density, stress) while meeting production capacity requirements. Due to process limitations, the radio frequency systems in different chambers differ, which affects the matching degree of the thin films deposited in each chamber, and consequently affects the performance of the thin films deposited in each chamber. [Summary of the Invention]

[0005] Embodiments of this application provide a radio frequency power output circuit and a semiconductor manufacturing apparatus, which can improve the problem of low chamber matching caused by differences in radio frequency systems, thereby improving thin film performance.

[0006] To achieve the above objectives, the embodiments of this application adopt the following technical solutions:

[0007] On one hand, embodiments of this application provide a radio frequency power output circuit applied to a semiconductor manufacturing equipment, the semiconductor manufacturing equipment including: multiple independent process chambers;

[0008] The radio frequency power output circuit includes:

[0009] An RF power supply module includes a first RF power supply and a second RF power supply. The first RF power supply is used to output a first RF signal, and the second RF power supply is used to output a second RF signal. The frequency value of the first RF signal is greater than the frequency value of the second RF signal.

[0010] A power distribution module includes a first input terminal, a second input terminal, and a plurality of output terminals corresponding one-to-one with the plurality of process chambers; the first input terminal is electrically connected to the first radio frequency power supply and is used to receive the first radio frequency signal output by the first radio frequency power supply; the second input terminal is electrically connected to the second radio frequency power supply and is used to receive the second radio frequency signal output by the second radio frequency power supply; each output terminal is used to be electrically connected to the corresponding process chamber; the power distribution module is used to evenly distribute the energy of the first radio frequency signal received by the first input terminal and / or the energy of the second radio frequency signal received by the second input terminal to each process chamber.

[0011] In some embodiments, the power distribution module includes a plurality of power distribution units, and the plurality of power distribution units correspond one-to-one with the plurality of process chambers;

[0012] The power distribution unit includes a first filter circuit and a second filter circuit;

[0013] The input terminal of the first filter circuit is electrically connected to the first radio frequency power supply, and the output terminal is electrically connected to the corresponding process chamber; the first filter circuit is used to isolate signals other than the first radio frequency signal;

[0014] The input terminal of the second filter circuit is electrically connected to the second radio frequency power supply, and the output terminal is electrically connected to the output terminal of the first filter circuit; the second filter circuit is used to isolate signals other than the second radio frequency signal.

[0015] In some embodiments, the power distribution unit further includes a balancing circuit, which is disposed between the output of the first filter circuit and the process chamber, for changing the resonant point of the circuit and avoiding series resonance.

[0016] In some embodiments, the first filter circuit includes a fifth capacitor, the second filter circuit includes a sixth capacitor and a third inductor connected in parallel, and the balancing circuit includes a fourth inductor;

[0017] Wherein, the first end of the fifth capacitor is electrically connected to the first radio frequency power supply, the first end of the sixth capacitor and the first end of the third inductor are both electrically connected to the second radio frequency power supply, the second end of the fifth capacitor, the second end of the sixth capacitor and the second end of the third inductor are all electrically connected to the first end of the fourth inductor, and the second end of the fourth inductor is electrically connected to the corresponding process chamber.

[0018] In some embodiments, the inductance value of the fourth inductor is less than the inductance value of the third inductor.

[0019] In some embodiments, the second power distribution subunit further includes an isolation circuit;

[0020] The input terminal of the isolation circuit is electrically connected to the input terminal of the second filter circuit, and the output terminal of the isolation circuit is grounded; the isolation circuit is used to isolate the first radio frequency signal flowing from the first filter circuit to the second filter circuit.

[0021] In some embodiments, the isolation circuit includes a seventh capacitor;

[0022] The first terminal of the seventh capacitor is electrically connected to the first terminal of the sixth capacitor, and the second terminal of the seventh capacitor is grounded.

[0023] In some embodiments, the radio frequency power output circuit further includes a plurality of power compensation units; the plurality of power compensation units and the plurality of power distribution units correspond one-to-one;

[0024] The input terminal of the power compensation unit is electrically connected to the output terminal of the corresponding power distribution unit, and the output terminal of the power compensation unit is used to be electrically connected to the corresponding process chamber; each power compensation unit is used to adjust the impedance value so that the power of the radio frequency signal output by each power compensation unit to the corresponding process chamber is the same.

[0025] In some embodiments, the power compensation unit includes a first variable capacitor and a second variable capacitor connected in parallel;

[0026] The first terminal of the first variable capacitor and the first terminal of the second variable capacitor are both electrically connected to the output terminal of the corresponding power distribution unit. The second terminal of the first variable capacitor and the second terminal of the second variable capacitor are both grounded and used to be electrically connected to the corresponding process chamber.

[0027] The signal output by the power distribution unit includes a first signal and a second signal, wherein the frequency of the first signal is greater than the frequency of the second signal;

[0028] The first variable capacitor is used to adjust the energy value of the first signal, and the second variable capacitor is used to adjust the energy value of the second signal.

[0029] In some embodiments, the frequency value of the first radio frequency signal ranges from 10MHz to 100MHz, and the frequency value of the second radio frequency signal ranges from 300KHz to 500KHz.

[0030] In some embodiments, the radio frequency power output circuit further includes: a first radio frequency matching circuit and a second radio frequency matching circuit;

[0031] The input terminal of the first radio frequency matching circuit is electrically connected to the output terminal of the first radio frequency power supply, and the output terminal of the first radio frequency matching circuit is electrically connected to the first input terminal of the power distribution module;

[0032] The input terminal of the second radio frequency matching circuit is electrically connected to the output terminal of the second radio frequency power supply, and the output terminal of the second radio frequency matching circuit is electrically connected to the second input terminal of the power distribution module.

[0033] In some embodiments, the first radio frequency matching circuit includes a first capacitor, a second capacitor, and a first inductor;

[0034] Wherein, the first end of the first capacitor and the first end of the second capacitor are both electrically connected to the output end of the first RF power supply, the second end of the first capacitor is grounded, the second end of the second capacitor is electrically connected to the first end of the first inductor, and the second end of the first inductor is electrically connected to the first input end of the power distribution module;

[0035] The second radio frequency matching circuit includes a third capacitor, a fourth capacitor, and a second inductor;

[0036] Wherein, the first end of the third capacitor and the first end of the second inductor are both electrically connected to the output end of the second RF power supply, the second end of the third capacitor is grounded, the second end of the second inductor and the first end of the fourth capacitor are both electrically connected to the second input end of the power distribution module, and the second end of the fourth capacitor is grounded.

[0037] On the other hand, embodiments of this application provide a semiconductor manufacturing apparatus including multiple independent process chambers and the above-mentioned radio frequency power output circuit;

[0038] The process chamber includes a chamber body and an upper electrode assembly and a lower electrode assembly located within the chamber body and disposed opposite to each other;

[0039] Each output terminal of the power distribution module of the radio frequency power output circuit is electrically connected to the upper electrode assembly or the lower electrode assembly of the corresponding process chamber.

[0040] In some embodiments, the upper electrode assembly includes a cavity cover and a flow equalization structure, the flow equalization structure being fixed to one side of the cavity cover, the cavity cover including an air inlet block;

[0041] The process chamber also includes an annular insulation layer, an annular heating band, and a plurality of heating rods disposed on the side of the chamber cover away from the uniform flow structure; the inner ring of the annular insulation layer is used to expose the air inlet block of the chamber cover; the plurality of heating rods are arranged around the annular insulation layer, a portion of the heating rods are disposed inside the chamber cover, and the remaining portion protrudes from the upper surface of the chamber cover; the annular heating band is arranged around the plurality of heating rods.

[0042] This application provides an RF power output circuit and a semiconductor process equipment. When the RF power output circuit is applied in the semiconductor process equipment, the first RF signal output by the first RF power supply and / or the second RF signal output by the second RF power supply can be evenly distributed to each process cavity after passing through the power distribution module. This improves the problem of low cavity matching caused by the difference of the RF system, thereby improving the thin film performance.

[0043] The above description is only an overview of the technical solution of this application. In order to better understand the technical means of this application and to implement it in accordance with the contents of the specification, and in order to make the above and other objects, features and advantages of this application more obvious and understandable, the following are specific embodiments of this application.

Implementation Method

[0045] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions of this application will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0046] In the embodiments of this application, the terms "first" and "second" are used to distinguish the same or similar items with basically the same function and effect, only for the purpose of clearly describing the technical solution of the embodiments of this application, and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated.

[0047] In the embodiments of this application, "a plurality of" means two or more, unless otherwise explicitly specified. In the description of this application, it should be understood that the terms "upper," "lower," "front," "back," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0048] In related technologies, the PEALD dual-cavity structure can be referenced in Figure 1, where RC1 and RC2 are two physically isolated independent chambers. The process gas gas flowing from the Gas Panel (gas holder, not shown in Figure 1) above chambers RC1 and RC2 is separated by pipelines and flows into chambers RC1 and RC2 through their respective gas distribution devices (labeled 1 and 2, respectively). This PEALD dual-cavity structure also includes two independent RF power supplies S1 and S2, and two independent RF matching controllers Match1 and Match2. The RF energy provided by the RF power supplies S1 and S2, after being matched by Match1 and Match2, enters chambers RC1 and RC2 respectively for process initiation. Chambers RC1 and RC2 can generate RF plasma simultaneously or sequentially. The heating bases of chambers RC1 and RC2 are labeled 3 and 4, respectively, and the wafers on the heating bases of chambers RC1 and RC2 are labeled 5 and 6, respectively. Isolation valves IV1 and IV2 are installed on the fore line 1 (not labeled in Figure 1) and fore line 2 (not labeled in Figure 1) of chambers RC1 and RC2, respectively, as well as butterfly valves TV1 and TV2 that control the chamber pressure by different opening and closing angles. This structure can achieve physical isolation between chambers RC1 and RC2, and can independently control the exhaust speed of chambers RC1 and RC2, and adjust the process pressure of chambers RC1 and RC2 individually. The inlet blocks (i.e., inlet blocks) at the intersection of the process gas and the purge gas (generally NF3) of the RPS (Remote Plasma System) of chambers RC1 and RC2 are marked as 7 and 8, respectively. Isolation valves IV3 and IV4 with independent switches are installed between the RPS and the inlet blocks, respectively. When the membrane in chambers RC1 and RC2 accumulates to a certain thickness and requires cleaning, the cleaning gas NF3 flows out from the RPS and then through two pipelines directly to chambers RC1 and RC2 respectively, achieving independent cleaning of chambers RC1 and RC2. In Figure 1, the air inlet structure also includes source bottle 9, and MFC represents the mass flow controller.

[0049] The RF feed structure of one chamber in the PEALD dual-cavity system can be referenced in Figure 2. In Figure 2, the process gas enters the chamber from the inlet block 7 through the chamber lid 16 and the showerhead 17. The RF generator operates at a high frequency (e.g., 13.56MHz). Its output RF power is first transmitted to the RF match via a cable, and then fed into the upper electrode (RF Electrode) of the chamber via the RF copper strip 12, i.e., the chamber lid 16 shown in Figure 2. The heating base 11 serves as the lower electrode and is grounded. After the RF signal is fed in from the RF copper strip 12, plasma 10 is generated between the upper and lower electrodes. In this RF system, the chamber lid 16 serves as the upper electrode connected to the RF circuit, and the heating base serves as the lower electrode and is grounded. In Figure 2, the upper heating block is marked as 13, the ceramic insulating isolation block is marked as 14, and the chamber wall is marked as 15.

[0050] In the dual-cavity PEALD of the related technology, as shown in Figure 1, the RC1 and RC2 cavities are equipped with two radio frequency power supplies S1 and S2. During the manufacturing process, the radio frequency energy is controlled by controlling the radio frequency setting power of the respective radio frequency power supplies of the RC1 and RC2 cavities. That is, the input power of RF (i.e., forward power, Psetting) is set in the process operation menu (recipe). This power is the initial output power of the radio frequency power supply (RF Generator). This output power is adjusted by the respective radio frequency matching units (i.e., Match1 and Match2 shown in Figure 1) of the RC1 and RC2 cavities. The adjustment goal is to make the reflected power (Preflected) lower than the set specification, for example: Preflected < 1% × Psetting, so as to achieve the same feed power of the RC1 and RC2 cavities.

[0051] Compared to single-chamber PEALD processes, multi-chamber (e.g., dual-chamber or quad-chamber) PEALD processes suffer from mismatches between multiple chambers. This mismatch manifests in inconsistent film performance between samples deposited in each chamber. For example, the wet etching rate (WER), thickness, and stress of the films deposited in each chamber may differ, exceeding the specified range and directly impacting the film's application. This is particularly true for applications such as 28nm spacers, double-pattern (below 28nm), and liner applications, where the matching between chambers is extremely stringent. Taking a dual-chamber PEALD device as an example, to form a SiO2 film (TSV liner) for advanced packaging layers with a target thickness of 6000 Å, the average deposition thickness per ALD cycle is approximately 0.7 Å. The difference in SiO2 thickness between two wafers deposited simultaneously in two chambers must be less than 120 Å, averaging less than 0.01 Å per cycle of the ALD reaction. While the thickness difference can be reduced to a certain extent by adjusting the number of cycles in the two chambers, this undoubtedly places high demands on the matching between the chambers. Differences in the gas delivery system, temperature control system, and RF generation and transmission system of the two chambers can all affect the matching degree. Furthermore, the stress requirement for the aforementioned TSV liner films is generally -250 ± 50 MPa. In addition to strictly meeting film performance requirements, the manufacturing costs of each piece of equipment also need to be reduced, including the cost of ownership (CoO) and the cost of consumables (CoC).

[0052] Furthermore, with increasing demands on equipment manufacturing costs, the PEALD dual-cavity design, employing two RF power supplies and two matching control systems, faces significant cost pressures. Simultaneously, current equipment lacks effective methods for adjusting thin film performance (especially thin film stress). For example, the stress required for a 6000 Å TSV liner (three-dimensional silicon through-hole deposition of silicon dioxide protective layer) is typically -250±50 MPa. Adjusting gas flow rate and process pressure has limited effectiveness. While increasing the RF power supplied by the RF power supply can alter thin film stress, the improvement is limited and can lead to deterioration in properties such as thickness uniformity and in-film particle characteristics.

[0053] Based on the above, embodiments of this application provide a radio frequency power output circuit applied to a semiconductor manufacturing equipment, the semiconductor manufacturing equipment including: multiple independent process chambers.

[0054] Referring to Figure 3, the RF power output circuit includes: an RF power supply module 20 and a power distribution module 22. Wherein:

[0055] The radio frequency power module 20 includes a first radio frequency power supply 201 and a second radio frequency power supply 202. The first radio frequency power supply 201 is used to output a first radio frequency signal, and the second radio frequency power supply 202 is used to output a second radio frequency signal. The frequency value of the first radio frequency signal is greater than the frequency value of the second radio frequency signal.

[0056] The power distribution module 22 includes a first input terminal, a second input terminal, and multiple output terminals corresponding to multiple process chambers; the first input terminal is electrically connected to the first RF power supply 201 and is used to receive the first RF signal output by the first RF power supply 201; the second input terminal is electrically connected to the second RF power supply 202 and is used to receive the second RF signal output by the second RF power supply 202; each output terminal is used to be electrically connected to the corresponding process chamber; the power distribution module 22 is used to evenly distribute the energy of the first RF signal received by the first input terminal and / or the energy of the second RF signal received by the second input terminal to each process chamber.

[0057] In specific implementations, in the above-mentioned RF power supply module 20, the first RF power supply 201 is a high-frequency RF power supply, and the second RF power supply 202 is a low-frequency RF power supply. This application does not limit the frequency values ​​of the first RF signal and the second RF signal. For example, the frequency value of the first RF signal can be 13.56MHz, and the frequency value of the second RF signal can be 400KHz. Similarly, this application does not limit the specific structure and power value of the first RF power supply 201 and the second RF power supply 202. Since the output frequency of the first RF power supply 201 is higher, the power is correspondingly larger. For example, the power value range of the first RF power supply 201 is set between 1500W and 5000W, preferably between 3000W and 5000W; the power value range of the second RF power supply 202 is set between 100W and 1000W, preferably between 500W and 1000W.

[0058] This application does not limit the specific structure of the power distribution module 22 described above, and the number of its output terminals is the same as the number of process chambers. If the number of process chambers is two, the above-mentioned RF power output circuit is applied in a dual-cavity semiconductor process equipment. In this case, the power distribution module 22 includes two output terminals and can be called a Twin-Chamber Power Distribution System (TCPD). It is used to evenly distribute the energy of the first RF signal received at the first input terminal and / or the energy of the second RF signal received at the second input terminal to the two process chambers, while ensuring that the two different frequencies of energy do not interfere with each other. Of course, the number of process chambers can also be three, four, or more, and the output terminals of the power distribution module 22 in the RF power output circuit can be three, four, or more. It should be noted that the power distribution module 22 mainly realizes the even distribution of the energy of the RF signal received at the first input terminal and / or the energy of the RF signal received at the second input terminal to each process chamber. When only the first input terminal receives the RF signal, the power distribution module 22 evenly distributes the energy of the RF signal received at the first input terminal to each process chamber. When only the second input terminal receives an RF signal, the power distribution module 22 distributes the energy of the RF signal received at the second input terminal evenly to each process chamber. When both the first and second input terminals receive RF signals, the power distribution module 22 distributes the energy of the RF signal received at the first input terminal and the energy of the RF signal received at the second input terminal evenly to each process chamber.

[0059] Therefore, the power distribution module 22 is used to evenly distribute the energy of the first radio frequency signal received at the first input terminal and / or the energy of the second radio frequency signal received at the second input terminal to each process chamber, including the following cases:

[0060] In the first case, when only the first RF power supply 201 outputs the first RF signal in the RF power supply module 20 and the second RF power supply 202 does not output the second RF signal, the power distribution module 22 is used to distribute the energy of the first RF signal received at the first input terminal to each process chamber.

[0061] In the second case, where only the second RF power supply 202 outputs the second RF signal in the RF power supply module 20 and the first RF power supply 201 does not output the first RF signal, the power distribution module 22 is used to distribute the energy of the second RF signal received at the second input terminal to each process chamber.

[0062] In the third case, where the first RF power supply 201 outputs a first RF signal and the second RF power supply 202 outputs a second RF signal in the RF power supply module 20, the power distribution module 22 is used to distribute the energy of the first RF signal received at the first input terminal and the energy of the second RF signal received at the second input terminal equally to each process chamber.

[0063] This application provides an RF power output circuit and a semiconductor process equipment. When the RF power output circuit is applied in the semiconductor process equipment, the first RF signal output by the first RF power supply 201 and / or the second RF signal output by the second RF power supply 202 can be evenly distributed to each process cavity after passing through the power distribution module 22, thereby improving the problem of low cavity matching caused by the difference of the RF system and thus improving the thin film performance.

[0064] In addition, the RF power output circuit provided in this application uses two RF power supplies with different frequency values, namely the first RF power supply 201 and the second RF power supply 202. This not only enables the use of one of the RF power supplies individually, but also allows the two RF power supplies to be combined to achieve a better debugging method.

[0065] For example, regarding the aforementioned related technologies, there is a lack of means to adjust thin film performance (especially thin film stress). The effects of related technologies by adjusting gas flow rate, process pressure, etc. are limited. Although increasing the RF power supply can change the thin film stress, the degree of improvement is limited, and it will lead to a deterioration in properties such as thickness uniformity and in-film particles.

[0066] In this application, when it is necessary to optimize and adjust the thin film stress, the first RF power supply 201 in the RF power supply module 20 outputs a first RF signal, and the second RF power supply 202 outputs a second RF signal. The power distribution module 22 then evenly distributes the energy of the first RF signal received at the first input terminal and the energy of the second RF signal received at the second input terminal to each process chamber, that is, evenly distributes the energy of the two different frequencies to each process chamber. By adjusting the power of the second RF power supply 202 (i.e., adjusting the low-frequency energy fed into the process chamber), the thin film stress can be adjusted without adjusting the power of the first RF power supply 201, thereby ensuring that the thin film stress performance is improved without reducing the thickness uniformity and thin film particle performance, and thus improving the thin film quality.

[0067] Therefore, the RF power output circuit provided in this application embodiment can adjust thin film properties such as thin film stress, wet etching rate, thickness uniformity, and thin film particles by adjusting the power of the first RF power supply 201 and / or the power of the second RF power supply 202. Compared with the related technologies that adjust the power of the high-frequency RF power supply to adjust the thin film performance, the RF power output circuit provided in this application embodiment adds process debugging means, which can significantly improve the thin film quality. In addition, in the RF power output circuit provided in this application embodiment, only one high-frequency first RF power supply 201 and one low-frequency second RF power supply 202 are set, and all chambers share the first RF power supply 201 and the second RF power supply 202. Compared with the related technologies that use one high-frequency power supply for each chamber, the RF power output circuit provided in this application embodiment saves the number of high-frequency power supplies, thereby reducing equipment costs.

[0068] The following uses a dual-cavity PEALD device as an example to compare the application of related technologies with that of this application. In the process of depositing SiO2 for TSV liner using a PEALD device, related technologies use two identical high-frequency RF power supplies (the output RF signal frequency is generally 13.56MHz) to feed RF signals to the dual cavities respectively. In the adjustment of thin film stress, the flow rates of precursor gas (e.g., source SAM24) and reactive gas (e.g., O2) have almost no effect on the adjustment of thin film stress. Increasing the high-frequency RF power, for example from 500W to 1000W, can partially adjust the thin film stress, for example, from 200MPa to 0MPa. However, the thin film stress requirement of a typical TSV liner process is -280±50MPa, and the adjustable range differs significantly from the requirement. If the thin film stress requirement is to be met, the high-frequency RF power needs to be increased again. However, this will lead to a deterioration in properties such as thickness uniformity and thin film particle size. In this application, two radio frequency (RF) power supplies with different output frequencies (e.g., 13.56MHz and 400kHz) are used. The RF energy fed into each chamber includes high-frequency (HF) RF energy and low-frequency (LF) RF energy. The high-frequency energy is used to adjust properties such as thickness uniformity and film particle size, while the low-frequency energy is used to adjust film stress. By adjusting the output power of the second RF power supply, the stress requirements of the TSV liner can be met without adjusting the output power of the first RF power supply 201. By adjusting the RF energy, especially the low-frequency energy, the adjustment window for film stress can be significantly expanded, thereby enabling better process integration of the TSV liner film with the preceding and following layers.

[0069] When using PEALD equipment to deposit SiO2 for spacer (sidewall) processes, there are relatively strict requirements for the WER (Wet Etch Rate) range of the thin film. In related technologies, the WER requirement can be met by adjusting the high-frequency RF power supply power and other process parameters, but the thickness uniformity and film particle properties will deteriorate. In this application, the WER requirement can be met by adjusting the low-frequency energy, i.e., the power of the first RF power supply 201, within a small range. Since the first RF power supply 201 and other process parameters remain unchanged or change only slightly, the thickness uniformity and film particle properties will remain basically constant.

[0070] In some embodiments, referring to FIG3, the radio frequency power output circuit further includes: a first radio frequency matching circuit 211 and a second radio frequency matching circuit 212.

[0071] The input terminal of the first radio frequency matching circuit 211 is electrically connected to the output terminal of the first radio frequency power supply 201, and the output terminal of the first radio frequency matching circuit 211 is electrically connected to the first input terminal of the power distribution module 22;

[0072] The input terminal of the second RF matching circuit 212 is electrically connected to the output terminal of the second RF power supply 202, and the output terminal of the second RF matching circuit 212 is electrically connected to the second input terminal of the power distribution module 22.

[0073] This application does not limit the specific structure of the first RF matching circuit 211 and the second RF matching circuit 212 described above. The first RF matching circuit 211 and the second RF matching circuit 212 generally include an L-type matching network, a Π-type (P-type) matching network, or a T-type matching network, etc., which can be selected according to actual requirements. For relevant descriptions of L-type matching networks, Π-type matching networks, or T-type matching networks, please refer to the prior art; they will not be described in detail here. The first RF matching circuit 211 maximizes the output power of the first RF power supply 201 while minimizing reflection loss. The second RF matching circuit 212 maximizes the output power of the second RF power supply 202 while minimizing reflection loss.

[0074] For example, referring to FIG4, the first radio frequency matching circuit 211 includes a first capacitor C1, a second capacitor C2 and a first inductor L1; wherein, the first end of the first capacitor C1 and the first end of the second capacitor C2 are both electrically connected to the output end of the first radio frequency power supply 201, and the second end of the first capacitor C1 is grounded; the second end of the second capacitor C2 is electrically connected to the first end of the first inductor L1; the second end of the first inductor L1 is electrically connected to the first input end of the power distribution module 22 (i.e., the first node N1 in FIG4).

[0075] The second RF matching circuit 212 includes a third capacitor C3, a fourth capacitor C4, and a second inductor L2; wherein, the first end of the third capacitor C3 and the first end of the second inductor L2 are both electrically connected to the output end of the second RF power supply 202, and the second end of the third capacitor C3 is grounded; the second end of the second inductor L2 and the first end of the fourth capacitor C4 are both electrically connected to the second input end of the power distribution module 22 (i.e., the second node N2 in Figure 4); the second end of the fourth capacitor C4 is grounded.

[0076] In the first RF matching circuit 211, the branch containing the second capacitor C2 and the first inductor L1 forms an L-shaped structure with the branch containing the first capacitor C1. The first RF matching circuit 211 is an L-shaped matching network circuit, which can provide wide-band impedance matching between the first RF power supply 201 and the load, and its structure is simple and easy to implement. In the second RF matching circuit 212, the branch containing the third capacitor C3, the branch containing the second inductor L2, and the branch containing the fourth capacitor C4 form a Π-shaped structure. The second RF matching circuit 212 is a Π-shaped matching network circuit, which can achieve more accurate matching and a smaller error rate.

[0077] It should be noted that the "first end" mentioned above refers to the following in the circuit diagram structure: when the components (inductors or capacitors) are arranged vertically, the upper end is the first end and the lower end is the second end; when the components (inductors or capacitors) are arranged horizontally, the left end is the first end and the right end is the second end. For example, in Figure 3, the first capacitor C1 is arranged vertically, with the upper end being the first end and the lower end being the second end; in Figure 3, the second capacitor C2 is arranged horizontally, with the left end being the first end and the right end being the second end; in Figure 3, the first inductor L1 is arranged horizontally, with the left end being the first end and the right end being the second end. The meanings of the first and second ends of other inductors or capacitors are similar and will not be explained further below.

[0078] In one or more embodiments, referring to FIG3, the power distribution module 22 includes a plurality of power distribution units, and the plurality of power distribution units correspond one-to-one with a plurality of process chambers 24.

[0079] Referring to Figure 4, the power distribution unit includes a first filter circuit 221 and a second filter circuit 222. The input terminal of the first filter circuit 221 is electrically connected to the first RF power supply 201, and the output terminal is electrically connected to the corresponding process chamber. The first filter circuit 221 is used to isolate signals other than the first RF signal. The input terminal of the second filter circuit 222 is electrically connected to the second RF power supply 202, and the output terminal is electrically connected to the output terminal of the first filter circuit 221. The second filter circuit 221 is used to isolate signals other than the second RF signal. Figure 4 illustrates an example where the power distribution module 22 includes two power distribution units, each electrically connected to the base 242 of one of the two process chambers.

[0080] Each of the above power distribution units is provided with a corresponding process chamber, and high-frequency energy and / or low-frequency energy are fed into the corresponding process chamber at the same time.

[0081] The first radio frequency energy (i.e., high-frequency energy) generated by the first radio frequency power supply 201 and / or the second radio frequency energy (i.e., low-frequency energy) generated by the second radio frequency power supply 202 can be evenly distributed to each process chamber after passing through multiple power distribution units. At the same time, multiple power distribution units can also avoid crosstalk between two different frequencies of energy.

[0082] The first filter circuit 221 described above can isolate and prevent low-frequency energy (e.g., 400KHz) from flowing through, while ensuring that high-frequency energy (e.g., 13.56MHz) flows through. At the same time, it prevents low-frequency energy from flowing to the first radio frequency power supply 201. The second filter circuit 222 described above can filter out high-frequency energy (e.g., 13.56MHz), that is, prevent high-frequency energy from flowing through, while ensuring that low-frequency energy (e.g., 400KHz) flows through. At the same time, it prevents high-frequency energy from flowing to the second radio frequency power supply 202.

[0083] In specific implementations, series resonance can easily form between the power distribution unit and the chamber. If series resonance occurs during the ignition process, the excessive current in the circuit can easily burn out the devices, thereby significantly reducing safety performance and equipment quality. In some embodiments, referring to FIG4, the power distribution unit further includes a balancing circuit 223. The balancing circuit 223 is disposed between the output terminal of the first filter circuit 221 and the process chamber 24 to change the resonant point of the circuit and avoid series resonance. That is, by setting the balancing circuit 223, the resonant point of the circuit can be changed, thereby avoiding the occurrence of series resonance and improving safety performance and equipment quality.

[0084] In order to simplify the structure, facilitate implementation, and further reduce costs, in some embodiments, referring to FIG4, the first filter circuit 221 includes a fifth capacitor C5, the second filter circuit 222 includes a sixth capacitor C6 and a third inductor L3 connected in parallel, and the balancing circuit 223 includes a fourth inductor L4; wherein, the first end of the fifth capacitor C5 is electrically connected to the first RF power supply 201, the first end of the sixth capacitor C6 and the first end of the third inductor L3 are both electrically connected to the second RF power supply 202, the second end of the fifth capacitor C5, the second end of the sixth capacitor C6 and the second end of the third inductor L3 are all electrically connected to the first end of the fourth inductor L4, and the second end of the fourth inductor L4 is electrically connected to the corresponding process chamber 24.

[0085] The larger the inductance value of the inductor, the greater the loss of high-frequency energy. In order to minimize the loss of the first radio frequency energy (i.e., high-frequency energy), in some embodiments, the inductance value of the fourth inductor L4 is smaller than the inductance value of the third inductor L3.

[0086] To prevent the first radio frequency energy (i.e., high-frequency energy) flowing out of the first filter circuit 221 from flowing to the second radio frequency power supply 201 and thus affecting the second radio frequency power supply 202, in some embodiments, referring to FIG4, the power distribution unit further includes an isolation circuit 224. The input terminal of the isolation circuit 224 is electrically connected to the input terminal of the second filter circuit 222, and the output terminal of the second filter circuit 222 is grounded. The isolation circuit 224 is used to isolate the first radio frequency signal flowing from the first filter circuit 221 to the second filter circuit 222. In this way, the first radio frequency energy (i.e., high-frequency energy) flowing out of the first filter circuit 221 is grounded after passing through the second filter circuit 222 and the isolation circuit 224, so that it will not flow to the second radio frequency power supply 202 and thus avoid affecting the second radio frequency power supply 202.

[0087] In order to effectively isolate high-frequency energy, in some embodiments, referring to FIG4, the isolation circuit 224 includes a seventh capacitor C7; the first end of the seventh capacitor C7 is electrically connected to the first end of the sixth capacitor C6, and the second end of the seventh capacitor C7 is grounded.

[0088] In order to further ensure that the power of the radio frequency signal output by the radio frequency power output circuit to each process chamber is the same, thereby further improving the process matching degree of each chamber, in one or more embodiments, referring to FIG3, the radio frequency power output circuit further includes: multiple power compensation units 23; the multiple power compensation units 23 and multiple power distribution units correspond one to one.

[0089] The input terminal of the power compensation unit 23 is electrically connected to the output terminal of the corresponding power distribution unit, and the output terminal of the power compensation unit 23 is used to be electrically connected to the corresponding process chamber 24; each power compensation unit 23 is used to adjust the impedance value so that the power of the radio frequency signal output by each power compensation unit 23 to the corresponding process chamber 24 is the same.

[0090] This application does not limit the specific structure of the power compensation unit described above, and can select according to actual needs. Each power compensation unit 23 outputs an RF signal to a corresponding process chamber 24. Each power compensation unit 23 can adjust the impedance value according to the process results, thereby changing the first RF energy value and / or the second RF energy value flowing into each process chamber 24, thereby ensuring that the power of the RF signal output to each process chamber 24 is the same, thereby realizing RF power compensation for each process chamber 24.

[0091] In some embodiments, in order to further simplify the structure and facilitate implementation, the power compensation unit 23 may include a first variable capacitor and a second variable capacitor connected in parallel; the first end of the first variable capacitor and the first end of the second variable capacitor are both electrically connected to the output end of the corresponding power distribution unit, and the second end of the first variable capacitor and the second end of the second variable capacitor are both grounded and used to be electrically connected to the corresponding process chamber 24.

[0092] The power distribution unit outputs a first signal and a second signal, the frequency of the first signal being greater than the frequency of the second signal; the first variable capacitor is used to adjust the energy value of the first signal, and the second variable capacitor is used to adjust the energy value of the second signal.

[0093] By adjusting the impedance values ​​of the first variable capacitor and the second variable capacitor (i.e., the effective capacitance values ​​in the circuit), the current values ​​of the two branches where the first variable capacitor and the second variable capacitor are located can be adjusted respectively, thereby changing the energy value of the first signal (i.e., the high-frequency energy value) and the energy value of the second signal (i.e., the low-frequency energy value), thereby changing the total energy value of the radio frequency signal flowing to the process chamber 24, and finally achieving the purpose of power compensation and realizing chamber matching.

[0094] In some embodiments, the frequency value of the first radio frequency signal ranges from 10MHz to 100MHz. For example, the frequency value of the first radio frequency signal can be 10MHz, 13.56MHz, 15MHz, 30MHz or 50MHz, etc., and 13.56MHz is generally used. The frequency value of the second radio frequency signal ranges from 300KHz to 500KHz. For example, the frequency value of the second radio frequency signal can be 300KHz, 400KHz or 500KHz, etc., and 400KHz is generally used.

[0095] Embodiments of this application also provide a semiconductor manufacturing apparatus, including multiple independent process chambers and the above-described radio frequency power output circuit.

[0096] Referring to Figure 5, the process chamber includes a chamber body 249 and an upper electrode assembly and a lower electrode assembly located inside the chamber body 249 and disposed opposite to each other; each output terminal of the power distribution module of the radio frequency power output circuit is electrically connected to the upper electrode assembly or the lower electrode assembly of the corresponding process chamber.

[0097] The upper electrode assembly may include a cavity cover 243 and a flow equalization structure 241 as shown in FIG5, wherein the flow equalization structure 241 is fixed on one side of the cavity cover 243; the lower electrode assembly may include a base 242 as shown in FIG5.

[0098] The radio frequency power output circuit is used to feed radio frequency signals to the upper electrode assembly or lower electrode assembly of each process chamber. Each output terminal of the power distribution module of the radio frequency power output circuit can be electrically connected to the upper electrode assembly of the corresponding process chamber, in which case the lower electrode assembly of each process chamber is grounded; or, each output terminal of the power distribution module of the radio frequency power output circuit can be electrically connected to the lower electrode assembly of the corresponding process chamber, in which case the upper electrode assembly of each process chamber is grounded; or, some output terminals of the power distribution module of the radio frequency power output circuit are electrically connected to the upper electrode assembly of the corresponding process chamber (in which case the lower electrode assembly of that part of the process chamber is grounded), and the remaining output terminals are electrically connected to the lower electrode assembly of the corresponding process chamber (in which case the upper electrode assembly of that part of the process chamber is grounded), without specific limitations.

[0099] In order to improve the matching degree of the chamber, each output terminal of the power distribution module of the RF power output circuit can be electrically connected to the base 242 of the corresponding process chamber, and the cavity cover 243 and the uniform current structure 241 of each process chamber are grounded; the first RF energy and / or the second RF energy are fed into the base 242, thereby forming a negative bias voltage on the wafer surface. Under the action of the negative bias voltage, the deposited reactants are more dense, which is more conducive to improving the film quality (e.g. WER and stress film performance).

[0100] When the output terminal of the power distribution module of the RF power output circuit is electrically connected to the upper electrode assembly, the output terminal may be electrically connected to the current equalization structure 241, or it may be electrically connected to the cavity cover 243, which is not limited here. When the output terminal of the power distribution module of the RF power output circuit is electrically connected to the lower electrode assembly, the output terminal may be electrically connected to the base 242. The specific location of the electrical connection to the base 242 is not limited. For example, for ease of implementation and to avoid occupying additional space, it may be electrically connected to the heater shaft.

[0101] For a detailed description of the above-mentioned radio frequency power output circuit, please refer to the foregoing embodiments, which will not be repeated here.

[0102] The semiconductor process equipment provided in this application belongs to atomic layer deposition equipment, which may also include an air intake structure, an online cleaning structure and an exhaust structure. The air intake structure, online cleaning structure and exhaust structure can refer to the prior art, and will not be described here.

[0103] Thin film deposition is performed using the semiconductor process equipment provided in this application embodiment, which improves the problem of low chamber matching caused by differences in the radio frequency system, thereby improving thin film performance. Furthermore, when the power distribution module of the radio frequency power output circuit is used to evenly distribute the energy of the first radio frequency signal output from the first radio frequency power supply and the energy of the second radio frequency signal output from the second radio frequency power supply to each process chamber, the stress performance of the thin film can be improved without reducing thickness uniformity and thin film particle performance, significantly improving the thin film quality; at the same time, the number of high-frequency power supplies is reduced, thereby reducing equipment costs.

[0104] In related technologies, the chamber cover is the first place that the source, process gas, and radio frequency energy pass through before entering the chamber. Therefore, the temperature control of the chamber cover is very important. Referring to Figure 6, four independent heating blocks 13 are provided on the upper surface of the chamber cover. The four heating blocks are connected in series to heat the chamber cover. The heating blocks can be made of heating plates. In Figure 6, the air intake component is marked as 7, and the exposed area on the chamber cover not covered by the heating blocks 13 is marked as 130.

[0105] Taking the heating process of the chamber cover plate in the PEALD SiN thin film formation process as an example, the temperature of the heating base in this process is 450℃, and the set temperature of the chamber cover plate is 200℃. Referring to Figure 7, four heating plates heat the chamber cover plate from room temperature (25℃) to the set temperature (200℃) in the first stage (step 1), i.e., the time period from 0 min to t1 min. Then, from the heating stage, the temperature enters the holding stage. Due to inertia, the highest temperature can reach about 215℃ in the second stage (step 2). After adjustment by PID (proportional integral derivative) control, the temperature gradually drops back to the set temperature of 200℃, taking (t2-t1) min. Since the heating plate power is fixed, the heating rate of the chamber cover plate is fast in the first stage, which can easily affect fragile parts in the chamber. At the same time, the maximum heating temperature exceeds the set temperature by a large margin, resulting in a long recovery time and a long overall heating time, thereby reducing production capacity.

[0106] The structure of setting heating blocks on the chamber cover plate in the related technology has disadvantages such as a single heating method and poor temperature control accuracy due to poor repeatability of the heating block manufacturing process. At the same time, this heating method also has a certain impact on the RF output. Both the heating element and the temperature control element can cause interference to the RF. In actual processes, there have been many problems with thin film performance fluctuations caused by the heating band. In actual processes, it was found that when the RF set power of the two chambers is the same, there are certain differences in the thin film performance (thickness, thickness uniformity, WER, stress, etc.) of the two chambers. There are many reasons for this difference, which may be related to the hardware differences between the two chambers themselves, the difference in the actual RF feed energy, insufficient heating and temperature control accuracy, and untimely temperature feedback.

[0107] In order to improve temperature control accuracy and reduce heating time, in some embodiments, referring to Figures 5, 8 and 9, the cavity cover 243 includes an air inlet block 248; the process chamber also includes an annular insulation layer 240, an annular heating band 245 and a plurality of heating rods 244 disposed on the side of the cavity cover 243 away from the uniform flow structure 241; the inner ring of the annular insulation layer 240 is used to expose the air inlet block 248 of the cavity cover 243; the plurality of heating rods 244 are arranged around the annular insulation layer 240, a part of the heating rods 244 is disposed inside the cavity cover 243 and the rest protrudes from the upper surface of the cavity cover 243; the annular heating band 245 is arranged around the plurality of heating rods 244.

[0108] To improve the uniformity of heating, multiple heating rods 244 can be evenly arranged around the annular insulation layer 240. The angle between the heating rods 244 and the upper surface of the cavity cover 243 is not limited. For example, the heating rods 244 can be set perpendicular to the upper surface of the cavity cover 243, in which case the heating rods 244 are inserted vertically into the cavity cover 243; or, the heating rods 244 can be set at an acute angle to the upper surface of the cavity cover 243, in which case the heating rods 244 are inserted obliquely into the cavity cover 243. Here, the direction of oblique insertion is not limited. It can be as shown in Figure 10, inserted obliquely into the cavity cover 243 in a direction away from the center of the cavity cover 243, or, as shown in Figure 11, inserted obliquely into the cavity cover 243 in a direction close to the center of the cavity cover 243. To save space, the heating rod 244 shown in Figure 5 can be arranged perpendicularly to the upper surface of the cavity cover 243; to improve the temperature uniformity of the cavity cover 243, the structure shown in Figure 11, in which the heating rod 244 is inserted obliquely into the cavity cover 243 along the direction close to the center of the cavity cover 243, can be selected.

[0109] The number, heating power, and specific placement of the heating rods 244 can be adjusted according to the process temperature requirements. For example, the number of heating rods 244 can be 5 to 10, with 6 to 8 being more common. The power of the heating rods 244 can be 300W to 1000W, with 400W to 600W being more common. In addition, the insertion angle and depth of the heating rods 244 can be determined according to the shape and thickness of the cavity cover 243 and the uniform flow structure 241.

[0110] To protect the heating rod and extend its service life, as shown in Figure 5, the process chamber may also include a ceramic cylinder 247. The ceramic cylinder 247 is arranged around the heating rod 244, which serves both a protective function and facilitates insertion and removal. As shown in Figure 5, the chamber cover 243 may also include an annular insulating layer 246. The annular insulating layer 246 can isolate the annular heating band 245 from the chamber wall of the chamber body 249, thereby protecting the annular heating band 245.

[0111] This application embodiment provides a heating structure integrating a heating rod 244 and an annular heating band 245. First, the annular heating band 245 is used to heat the cavity cover 243, causing the temperature to rise from room temperature to a first preset temperature value. The heating rate in this stage is relatively low. Then, the heating rod 244 is used to heat the cavity cover 243, causing the temperature to rise from the first preset temperature value to a second preset temperature value. The heating rate in this stage is higher than the previous stage. Next, the annular heating band 245 is used to heat the cavity cover 243, causing the temperature to rise from the second preset temperature value to a target temperature value. Due to inertia, the temperature of the cavity cover 243 will continue to rise from the target temperature value to its maximum value. Then, a PID control method is used to adjust the temperature, causing it to fall back to near the target temperature value. Since the heating rate of the heating rod 244 is greater than that of the annular heating band 245, using the annular heating band 245 to heat the cavity cover 243 during the stage where the temperature rises from the second preset temperature value to the target temperature value can reduce the subsequent maximum temperature reached due to inertia, thereby reducing the temperature recovery time, saving the overall heating time, shortening the recovery time after the cavity is in PM (maintenance) or down (shutdown), and improving the machine utilization rate. Furthermore, during the stage where the temperature of the cavity cover 243 rises from room temperature to the first preset temperature value, using the annular heating band 245, due to its lower heating rate and lower temperature rise rate, can protect fragile components inside the cavity as much as possible, extending their service life.

[0112] Taking the heating process of the cavity cover 243 during the PEALD SiN thin film formation process as an example, the temperature of the base 242 in this process is 450°C, and the set temperature of the cavity cover 243 is 200°C. In the heating process used in this embodiment, the first preset temperature value can be set to 100°C, the second preset temperature value can be set to 180°C, the target temperature value is 200°C, and the maximum temperature during the heating process is 205°C. Compared with the maximum temperature of 215°C in the aforementioned related technologies, the maximum temperature reached during the heating process is significantly reduced, thereby reducing the time for the temperature to fall back from the maximum value to the target temperature value and saving the overall heating time.

[0113] Embodiments of this application further provide a temperature control method for semiconductor process equipment, including:

[0114] S1. Referring to the Step1 stage shown in Figure 12, during the time period from 0 min to t3 min, the annular heating belt 245 is controlled to heat up, so that the temperature of the cavity cover 243 rises from room temperature to the first preset temperature value.

[0115] The room temperature is generally 25℃. The range of the first preset temperature value can include 90℃~110℃. For example, the first preset temperature value can be 90℃, 100℃ or 110℃, etc., which can be determined according to the actual situation.

[0116] S2. Referring to the Step2 stage shown in Figure 12, during the time period t3 min-t4 min, the annular heating belt 245 is controlled to stop heating, and the heating rod 244 is controlled to heat, so that the temperature of the cavity cover 243 rises from the first preset temperature value to the second preset temperature value; the heating rate of the heating rod 244 is greater than the heating rate of the annular heating belt 245.

[0117] The range of the second preset temperature value may include 170℃~190℃. For example, the second preset temperature value may be 170℃, 180℃ or 190℃, etc., which can be determined according to the actual situation.

[0118] S3. Referring to the Step3 stage shown in Figure 12, during the time period t4 min-t5 min, control the heating rod 244 to stop heating and control the annular heating belt 245 to heat, so that the temperature of the cavity cover 243 rises from the second preset temperature value to the target temperature value.

[0119] The range of the target temperature value can include 195℃~205℃. For example, the target temperature value can be 195℃, 200℃ or 205℃, etc., which can be determined according to the actual situation.

[0120] Through the above temperature control method, on the one hand, the maximum temperature reached due to inertia can be reduced, thereby reducing the temperature recovery time, saving the overall heating time, shortening the recovery time after the chamber is PM (maintenance) or down (shutdown), and improving the machine utilization rate. On the other hand, during the stage when the temperature of the chamber cover 243 rises from room temperature to the first preset temperature value, the annular heating belt 245 is used for heating. Due to the small heating rate and low temperature rise rate, the fragile parts in the chamber can be protected as much as possible, extending their service life.

[0121] It should be noted that after step S3 above, the temperature control method further includes:

[0122] S4. Referring to the Step4 stage shown in Figure 12, during the time period from t5 min to t6 min, the PID control method is used to adjust the temperature so that it drops back to the target temperature value.

[0123] PID control method is widely used in temperature control, water level control, flight attitude control and other fields. For relevant explanations, please refer to the existing technology, which will not be repeated here.

[0124] It should be noted that the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0125] The terms "one embodiment," "embodiment," or "one or more embodiments" used in this application mean that a particular feature, structure, or characteristic described in connection with an embodiment is included in at least one embodiment of this application. Furthermore, please note that the examples of the phrase "in one embodiment" do not necessarily all refer to the same embodiment.

[0126] The above description is merely an embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of the claims of this application. [Simplified Explanation of the Diagram]

[0044] In order to more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. Figure 1 is a schematic diagram of a dual-cavity PEALD provided by the prior art; Figure 2 is a schematic diagram of a RF feed structure of a cavity provided by the prior art; Figure 3 is a schematic diagram of a RF power output circuit provided by an embodiment of this application; Figure 4 is a schematic diagram of another RF power output circuit provided by an embodiment of this application; Figure 5 is a schematic diagram of a semiconductor process equipment provided by an embodiment of this application; Figure 6 is a schematic diagram of a heating block of a cavity cover provided by the prior art; Figure 7 is a temperature rise curve of heating using the heating block shown in Figure 6; Figure 8 is a schematic diagram of a ring heating belt and heating rod provided by an embodiment of this application; Figure 9 is a top view of Figure 8; Figure 10 is a schematic diagram of a heating rod and cavity cover provided by an embodiment of this application; Figure 11 is a schematic diagram of another heating rod and cavity cover provided by an embodiment of this application; Figure 12 is a temperature rise curve of heating using the ring heating belt and heating rod shown in Figure 8.

Claims

1. A radio frequency power output circuit, applied in a semiconductor manufacturing apparatus, the semiconductor manufacturing apparatus comprising: Multiple independent process chambers; The RF power output circuit includes: an RF power supply module, including a first RF power supply and a second RF power supply, wherein the first RF power supply is used to output a first RF signal, and the second RF power supply is used to output a second RF signal, and the frequency value of the first RF signal is greater than the frequency value of the second RF signal; a power distribution module, including a first input terminal, a second input terminal, and a plurality of output terminals corresponding one-to-one with the plurality of process chambers; the first input terminal is electrically connected to the first RF power supply and is used to receive the first RF signal output by the first RF power supply; the second input terminal is electrically connected to the second RF power supply and is used to receive the second RF signal output by the second RF power supply; each output terminal is used to be electrically connected to the corresponding process chamber; the power distribution module is used to evenly distribute the energy of the first RF signal received by the first input terminal and / or the energy of the second RF signal received by the second input terminal to each process chamber.

2. The radio frequency power output circuit as described in claim 1, wherein, The power distribution module includes multiple power distribution units, each corresponding to one of the process chambers. Each power distribution unit includes a first filter circuit and a second filter circuit. The input terminal of the first filter circuit is electrically connected to the first RF power supply, and its output terminal is electrically connected to the corresponding process chamber. The first filter circuit is used to isolate signals other than the first RF signal. The input terminal of the second filter circuit is electrically connected to the second RF power supply, and its output terminal is electrically connected to the output terminal of the first filter circuit. The second filter circuit is used to isolate signals other than the second RF signal.

3. The radio frequency power output circuit as described in claim 2, wherein, The power distribution unit also includes a balancing circuit, which is located between the output of the first filter circuit and the process chamber to change the resonant point of the circuit and avoid series resonance.

4. The radio frequency power output circuit as described in claim 3, wherein, The first filter circuit includes a fifth capacitor, the second filter circuit includes a sixth capacitor and a third inductor connected in parallel, and the balancing circuit includes a fourth inductor; wherein, the first terminal of the fifth capacitor is electrically connected to the first RF power supply, the first terminals of the sixth capacitor and the third inductor are both electrically connected to the second RF power supply, the second terminals of the fifth capacitor, the sixth capacitor, and the third inductor are all electrically connected to the first terminal of the fourth inductor, and the second terminal of the fourth inductor is electrically connected to the corresponding process chamber.

5. The radio frequency power output circuit as described in claim 4, wherein, The inductance value of the fourth inductor is less than that of the third inductor.

6. The radio frequency power output circuit as described in claim 4, wherein, The power distribution unit also includes an isolation circuit; the input terminal of the isolation circuit is electrically connected to the input terminal of the second filter circuit, and the output terminal of the isolation circuit is grounded; the isolation circuit is used to isolate the first radio frequency signal flowing from the first filter circuit to the second filter circuit.

7. The radio frequency power output circuit as described in claim 6, wherein, The isolation circuit includes a seventh capacitor; the first terminal of the seventh capacitor is electrically connected to the first terminal of the sixth capacitor, and the second terminal of the seventh capacitor is grounded.

8. The radio frequency power output circuit as described in any one of claims 2-7, wherein, The RF power output circuit also includes multiple power compensation units; each power compensation unit corresponds to a power distribution unit; the input terminal of the power compensation unit is electrically connected to the output terminal of the corresponding power distribution unit, and the output terminal of the power compensation unit is used to be electrically connected to the corresponding process chamber; each power compensation unit is used to adjust the impedance value so that the power of the RF signal output by each power compensation unit to the corresponding process chamber is the same.

9. The radio frequency power output circuit as described in claim 8, wherein, The power compensation unit includes a first variable capacitor and a second variable capacitor connected in parallel. The first terminals of both the first and second variable capacitors are electrically connected to the output terminals of their respective power distribution units. The second terminals of both the first and second variable capacitors are grounded and used for electrical connection to their respective process chambers. The power distribution unit outputs a first signal and a second signal, where the frequency of the first signal is greater than the frequency of the second signal. The first variable capacitor is used to adjust the energy value of the first signal, and the second variable capacitor is used to adjust the energy value of the second signal.

10. The radio frequency power output circuit as described in any one of claims 1-7, wherein, The frequency range of the first radio frequency signal is 10MHz to 100MHz, and the frequency range of the second radio frequency signal is 300KHz to 500KHz.

11. The radio frequency power output circuit as described in any one of claims 1-7, wherein, The RF power output circuit further includes: a first RF matching circuit and a second RF matching circuit; the input terminal of the first RF matching circuit is electrically connected to the output terminal of the first RF power supply, and the output terminal of the first RF matching circuit is electrically connected to the first input terminal of the power distribution module; the input terminal of the second RF matching circuit is electrically connected to the output terminal of the second RF power supply, and the output terminal of the second RF matching circuit is electrically connected to the second input terminal of the power distribution module.

12. The radio frequency power output circuit as described in claim 11, wherein, The first RF matching circuit includes a first capacitor, a second capacitor, and a first inductor; wherein, the first terminal of the first capacitor and the first terminal of the second capacitor are both electrically connected to the output terminal of the first RF power supply, the second terminal of the first capacitor is grounded, the second terminal of the second capacitor is electrically connected to the first terminal of the first inductor, and the second terminal of the first inductor is electrically connected to the first input terminal of the power distribution module; the second RF matching circuit includes a third capacitor, a fourth capacitor, and a second inductor; wherein, the first terminal of the third capacitor and the first terminal of the second inductor are both electrically connected to the output terminal of the second RF power supply, the second terminal of the third capacitor is grounded, the second terminal of the second inductor and the first terminal of the fourth capacitor are both electrically connected to the second input terminal of the power distribution module, and the second terminal of the fourth capacitor is grounded.

13. A semiconductor manufacturing apparatus, wherein, It includes multiple independent process chambers and the radio frequency power output circuit described in any one of claims 1-12; the process chamber includes a chamber body and an upper electrode assembly and a lower electrode assembly located within the chamber body and disposed opposite to each other; each output terminal of the power distribution module of the radio frequency power output circuit is electrically connected to the upper electrode assembly or the lower electrode assembly of the corresponding process chamber.

14. The semiconductor manufacturing apparatus as claimed in claim 13, wherein, The upper electrode assembly includes a cavity cover and a flow equalization structure, the flow equalization structure being fixed to one side of the cavity cover, the cavity cover including an air inlet block; the process chamber also includes an annular insulation layer, an annular heating band, and multiple heating rods disposed on the side of the cavity cover away from the flow equalization structure; the inner ring of the annular insulation layer is used to expose the air inlet block of the cavity cover; the multiple heating rods are arranged around the annular insulation layer, a portion of the heating rods being disposed inside the cavity cover and the remaining portion protruding from the upper surface of the cavity cover; the annular heating band is arranged around the multiple heating rods.

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