Thin film transistor

TWI934456BActive Publication Date: 2026-08-01AU OPTRONICS CORP

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Patent Information

Authority / Receiving Office: TW · TW
Patent Type: Patents
Current Assignee / Owner: AU OPTRONICS CORP
Filing Date: 2025-02-07
Publication Date: 2026-08-01

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Abstract

A thin-film transistor includes a first metal layer, a semiconductor layer, a first insulating layer, a second metal layer, a second insulating layer, and a third metal layer. The semiconductor layer is disposed on the first metal layer and includes a first heavily doped region, a second heavily doped region, a channel region, and a first lightly doped region. The first insulating layer is disposed on the semiconductor layer; the second metal layer is disposed on the first insulating layer; the second insulating layer is disposed on the second metal layer; and the third metal layer is disposed on the second insulating layer. The channel region is located between the first lightly doped region and the first heavily doped region.

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Claims

1. A thin-film transistor, comprising: First metal layer; A semiconductor layer is disposed on the first metal layer, the semiconductor layer further comprising a first heavily doped region, a second heavily doped region, a channel region, and a first lightly doped region; a first insulating layer is disposed on the semiconductor layer; a second metal layer is disposed on the first insulating layer; a second insulating layer is disposed on the second metal layer; and a third metal layer is disposed on the second insulating layer, wherein the channel region is located between the first lightly doped region and the first heavily doped region, and the boundary of the channel region contacts the boundary of the first heavily doped region.

2. The thin-film transistor of claim 1 further includes a second lightly doped region, the channel region being located between the first lightly doped region and the second lightly doped region, wherein the length of the first lightly doped region is greater than or equal to the length of the second lightly doped region in a first direction.

3. The thin-film transistor of claim 2, wherein the dopant of the first lightly doped region includes boron, and the doping concentration of the first lightly doped region is greater than or equal to 4 × 10¹² (1 / cm³) and less than or equal to 8 × 10¹² (1 / cm³).

4. The thin-film transistor as claimed in claim 1 further includes a buffer layer disposed between the first metal layer and the semiconductor layer.

5. The thin-film transistor as claimed in claim 1, wherein the first metal layer, the second metal layer, and the third metal layer are at the same potential.

6. The thin-film transistor of claim 1, wherein the first metal layer and the second metal layer are at the same potential, and the potential of the third metal layer is floating.

7. The thin-film transistor of claim 1, wherein in a first direction there is a distance between the boundary of the second metal layer and the boundary of the third metal layer, the distance being the same as the length of the first lightly doped region.

8. The thin-film transistor of claim 1 further includes a source and a drain, wherein in a first direction, the distance between the boundary of the third metal layer and the drain is less than the distance between the boundary of the first lightly doped region and the drain.