Manufacturing method of semiconductor device

Abstract

A method for manufacturing a semiconductor device includes at least the following steps: Providing a semiconductor structure. The semiconductor structure includes a substrate, an interposer layer disposed on a first surface of the substrate, a plurality of wafers disposed on the interposer layer, and a plurality of external terminals disposed on a second surface of the substrate, wherein the interposer layer includes a molding layer and a conductive layer embedded within the molding layer, and the plurality of wafers are electrically connected to the plurality of external terminals through the interposer layer and the substrate. Next, a bonding process is performed to cover the plurality of external terminals with an adhesive film, wherein the adhesive film provides an inward pulling force on the semiconductor structure. Then, a baking process is performed on the semiconductor structure and the adhesive film thereon, wherein the baking process temperature is less than 300°C; and the adhesive film is removed.

Claims

1. A method for manufacturing a semiconductor device, comprising: A semiconductor structure is provided, wherein the semiconductor structure includes: a substrate having opposing first and second surfaces; an interposer disposed on the first surface, wherein the interposer includes a molding layer and a conductive layer embedded within the molding layer, the conductive layer being an insulating via penetrating the molding layer; a plurality of wafers disposed on the interposer; a plurality of external terminals disposed on the second surface, wherein the plurality of wafers are electrically connected to the plurality of external terminals through the interposer and the substrate; performing a bonding process to cover the plurality of external terminals with an adhesive film, wherein the adhesive film is used to provide an inward pulling force on the semiconductor structure; performing a baking process on the semiconductor structure and the adhesive film thereon, wherein the baking process temperature is less than 300°C; and removing the adhesive film.

2. A method of manufacturing a semiconductor device as claimed in claim 1, wherein, prior to performing the bonding process, at least one axial tension is provided to the adhesive film to provide the tension after performing the bonding process.

3. The method of manufacturing a semiconductor device as claimed in claim 2, wherein the tensile strength ranges from 1 Newton / cm to 30 Newton / cm.

4. A method of manufacturing a semiconductor device as claimed in claim 2, wherein the at least one axis is an X-axis, a Y-axis, or a combination thereof.

5. A method for manufacturing a semiconductor device as claimed in claim 2, wherein the adhesive film comprises a first substrate and a first adhesive layer, the first adhesive layer being disposed between the substrate and the first substrate, and the material of the first substrate comprising polyimide.

6. A method of manufacturing a semiconductor device as claimed in claim 1, wherein the adhesive film includes a control layer having a coefficient of thermal expansion ranging from 20 ppm / °C to 300 ppm / °C, and wherein the control layer provides the tensile force after the baking process is performed.

7. A method of manufacturing a semiconductor device as claimed in claim 6, wherein the adhesive film comprises a second adhesive layer and the control layer, and the adhesive film is attached to the semiconductor structure via the second adhesive layer.

8. A method of manufacturing a semiconductor device as claimed in claim 7, wherein the control layer comprises polyetherimide, polyetheretherketone, polyphenylene sulfide, polyethylene naphthalate, or a combination thereof.

9. A method for manufacturing a semiconductor device as claimed in claim 6, wherein the adhesive film is composed of a second substrate, a third adhesive layer and the control layer, the adhesive film is bonded to the semiconductor structure through the third adhesive layer, the third adhesive layer is disposed between the semiconductor structure and the second substrate, and the second substrate is disposed between the third adhesive layer and the control layer.

10. A method of manufacturing a semiconductor device as claimed in claim 9, wherein the second substrate comprises polyimide, and the second control layer comprises epoxy resin, phenolic resin, or a combination thereof.

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