Substrate processing apparatus

Abstract

This invention provides a substrate processing apparatus capable of highly precise control of the processing rate of a substrate. The substrate processing apparatus 1 of the embodiment includes: a rotation holding unit 10 that holds and rotates a substrate W; a processing liquid supply unit 20 that supplies processing liquid Lp to the substrate W held and rotated by the rotation holding unit 10; a heating unit 50 having a light-emitting element 51 that emits light of a wavelength absorbed by the substrate W, thereby heating the substrate W by irradiating the substrate W held and rotated by the rotation holding unit 10 with light from the light-emitting element 51; and a temperature measuring unit 70 having a radiation thermometer 71 that non-contactly measures the temperature of the processing liquid Lp based on light radiated from the processing liquid Lp, thereby measuring the temperature of the processing liquid Lp heated due to contact with the substrate W by the radiation thermometer 71.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus. Prior Technology

[0002] A monolithic substrate processing apparatus is known, which rotates a substrate such as a semiconductor wafer while supplying a processing solution to the substrate for etching or resist removal. In this substrate processing apparatus, a heater heats the substrate or the processing solution on the substrate, thereby increasing the temperature of the processing solution and thus increasing the processing efficiency. [Existing Technical Documents]

[0003] [Patent Literature] [Patent Document 1] Japanese Patent Application Publication No. 2015-211201 Summary of the Invention

[0004] [The problem the invention aims to solve] In recent years, with the miniaturization of semiconductor devices, there is a need for more precise control over the amount of substrate processed. Therefore, in substrate processing, it is essential to control the processing rate (the amount of substrate processed per unit time) with high precision.

[0005] The embodiments of the present invention are proposed to solve the problems described above, and their purpose is to provide a substrate processing apparatus capable of controlling the processing rate of a substrate with high precision. [Technical means to solve the problem]

[0006] The substrate processing apparatus according to an embodiment of the present invention includes: a rotation holding section for holding and rotating a substrate; a supply section for supplying a processing liquid to the substrate held and rotated by the rotation holding section; a heating section having a light-emitting element that irradiates light of a wavelength absorbed by the substrate, thereby heating the substrate by irradiating the substrate held and rotated by the substrate with light from the light-emitting element; and a temperature measuring section having a radiation thermometer for non-contactly measuring the temperature of the processing liquid in contact with the substrate, thereby measuring the temperature of the processing liquid heated due to contact with the substrate by the radiation thermometer. [The effects of the invention]

[0007] By means of the embodiments of the present invention, the processing rate of the substrate can be controlled with high precision. Simple Explanation of the Diagram

[0008] Figure 1 is a partial axial cross-sectional view showing the supply of processing liquid in the substrate processing apparatus of the embodiment. Figure 2 is a partial axial cross-sectional view showing the rinsing fluid supply in the substrate processing apparatus of Figure 1. Figure 3 is a partial axial cross-sectional view showing the loading and unloading of the substrate in the substrate processing apparatus of Figure 1. Figure 4 is a graph showing the relationship between the wavelength of the irradiation light applied to the phosphoric acid solution and the substrate and the transmittance. Figure 5 is a bottom view of the heating element. Figure 6 is a graph showing the relationship between the wavelength of the irradiation light and the absorbance for phosphoric acid solution and water. Figure 7 is a block diagram of the control device. Figure 8 is a flowchart illustrating the processing flow of the implementation method. Implementation

[0009] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. [summary] As shown in Figure 1, the substrate processing apparatus 1 processes the substrate W by rotating the substrate W held by the rotation holding unit 10 and supplying processing liquid Lp to the substrate W from the processing liquid supply unit 20. The substrate processing apparatus 1 of this embodiment is a monolithic device that supplies the substrate W with an etching-capable processing liquid Lp for etching processing. Furthermore, as shown in Figure 2, in this embodiment, before and after the supply of processing liquid Lp, the substrate W is rinsed by supplying rinsing liquid Lc to it from the rinsing liquid supply unit 30.

[0010] The substrate processing apparatus 1 includes a heating unit 50 containing a light-emitting element 51 and a temperature measuring unit 70 containing a radiation thermometer 71. The light-emitting element 51 is a light-emitting diode (LED) that irradiates light of a wavelength that heats the substrate W to heat the substrate W itself. The radiation thermometer 71 measures a wavelength that can measure the temperature of the processing liquid Lp on the substrate W. The control device 80 adjusts the output of the light-emitting element 51 based on the measured temperature of the processing liquid Lp. That is, the object heated by the substrate processing apparatus 1 (the substrate W) is different from the object whose temperature is measured (the processing liquid Lp).

[0011] The substrate W processed in this embodiment is, for example, a disc-shaped silicon wafer (hereinafter referred to as a Si substrate) with a silicon nitride film and a silicon oxide film formed on its surface. The processing solution Lp is, for example, an aqueous solution containing phosphoric acid (hereinafter referred to as a phosphoric acid solution). The concentration of phosphoric acid in the processing solution Lp is, for example, 85 wt% to 94 wt%. The rinsing solution Lc is, for example, pure water (H₂O).

[0012] (Control of processing rate based on temperature measurement) The processing rate of substrate W is affected by the temperature of substrate W. Therefore, in order to control the processing rate, for example, the following operation is performed: a heater for heating substrate W is connected to a control device along with a thermometer for measuring the temperature of substrate W; the substrate W, to which processing liquid Lp is supplied, is heated, and the temperature of substrate W is measured. The control device compares the measured temperature of substrate W with a target temperature and adjusts the output of the heater to maintain the temperature of substrate W at the target temperature, thereby controlling the processing rate.

[0013] As a thermometer, a radiation thermometer can be used, for example. A radiation thermometer measures the intensity of electromagnetic waves, such as infrared or visible light, emitted from the object being measured, and calculates the object's temperature based on the object's emissivity. However, the emissivity of an object depends on its material or surface condition. Therefore, different types of substrates W will have different emissivity. The type of substrate W specifically refers to the material forming the substrate W, the film formed on the surface of the substrate W, or the type of pattern (undulation) formed on the surface of the substrate W. Therefore, to accurately measure the temperature of the substrate W using a radiation thermometer, the emissivity of each type of substrate W must be calculated beforehand, and the settings of the radiation thermometer must be adjusted individually according to the type of substrate W, which is time-consuming and labor-intensive.

[0014] Therefore, the inventors focused on researching a technology that could obtain highly accurate temperature information even without individually adjusting the radiation thermometer according to different types of substrates W, and as a result, developed the substrate processing apparatus 1 according to the embodiment described below. As long as accurate temperature information can be obtained as in this embodiment, the change in the output of the light-emitting element 51 relative to the target temperature can be made more accurate. Furthermore, by changing the output of the light-emitting element 51, the temperature of the processing liquid Lp can be ensured to be the target temperature, thereby enabling highly accurate control of the processing rate of the substrate W.

[0015] [structure] As shown in FIG1, the substrate processing apparatus 1 of this embodiment includes a rotating holding part 10, a processing liquid supply part 20, a rinsing liquid supply part 30, a liquid receiving part 40, a heating part 50, a lifting mechanism 60, a temperature measuring part 70, and a control device 80.

[0016] (Rotational retaining part) The rotation holding part 10 holds the substrate W and rotates it. The rotation holding part 10 has a rotation platform 11, a chuck pin 12, and a drive part 13. The rotation platform 11 is a cylindrical component, one end of which is closed by an opposing surface 11a. The opposing surface 11a is a circular surface with a diameter larger than that of the substrate W, and it faces the substrate W, which is the object to be processed, at a distance.

[0017] The chuck pins 12 are spaced apart and hold the substrate W on the facing surface 11a of the rotary platform 11. Multiple chuck pins 12 protrude from the rotary platform 11 and are evenly spaced along positions corresponding to the outer periphery of the substrate W. Furthermore, the chuck pins 12 are movably positioned between a closed position (contacting the outer periphery of the substrate W to hold it) and an open position (moving away from the outer periphery of the substrate W to release it) via an opening and closing mechanism (not shown).

[0018] The drive unit 13 is a drive source (motor) that rotates the rotary platform 11. The drive unit 13 rotates the base plate W held by the chuck pin 12 by rotating the rotary platform 11.

[0019] (Processing Fluid Supply Department) The processing liquid supply unit 20 supplies processing liquid Lp to the substrate W, which is held and rotated by the rotating holding unit 10. The processing liquid supply unit 20 includes a processing liquid nozzle 21, a processing liquid supply pipe 22, a heater 23, and a valve 24. The processing liquid nozzle 21 is inserted through the support 52 and cover 53 of the heating unit 50 (described later), and the nozzle outlet 21a at the front end is provided in a manner that faces the vicinity of the center of the substrate W held by the rotating holding unit 10.

[0020] The processing liquid nozzle 21 is connected to a processing liquid supply source 25, such as a storage tank containing processing liquid Lp, via a processing liquid supply pipe 22. In this embodiment, the processing liquid Lp supplied from the processing liquid supply source 25 is preheated. A heater 23 is provided midway through the processing liquid supply pipe 22. After being heated by the heater 23 via the processing liquid supply pipe 22, the processing liquid Lp supplied from the processing liquid supply source 25 is ejected from the nozzle outlet 21a of the processing liquid nozzle 21 to the vicinity of the center of the substrate W.

[0021] The temperature of the processing fluid Lp ejected from the processing fluid nozzle 21 is, for example, 160°C. Furthermore, a valve 24 is provided midway through the processing fluid supply pipe 22. By opening and closing the valve 24, the ejection of the processing fluid Lp from the processing fluid nozzle 21 is initiated and stopped. The valve 24 is electrically connected to the control device 80 described later, and its opening and closing are controlled by the control device 80.

[0022] (Rinse Fluid Supply Department) As shown in Figure 2, the rinsing fluid supply unit 30 supplies rinsing fluid Lc to the substrate W held by the rotating holding unit 10. For example, pure water can be used as the rinsing fluid Lc. The rinsing fluid supply unit 30 includes a rinsing fluid nozzle 31, a rinsing fluid supply pipe 32, and a valve 33. The rinsing fluid nozzle 31 is inserted through the support portion 52 and the cover 53 of the heating unit 50 (described later), and its front nozzle 31a is positioned facing the vicinity of the center of the substrate W held by the rotating holding unit 10.

[0023] The rinsing fluid nozzle 31 is connected to a rinsing fluid supply source 34, such as a storage tank containing rinsing fluid Lc, via a rinsing fluid supply pipe 32. The rinsing fluid Lc supplied from the rinsing fluid supply source 34 is ejected from the nozzle outlet 31a of the rinsing fluid nozzle 31 through the rinsing fluid supply pipe 32 to the vicinity of the center of the substrate W. A valve 33 is provided midway through the rinsing fluid supply pipe 32. By opening and closing the valve 33, the ejection of rinsing fluid Lc from the rinsing fluid nozzle 31 is initiated and stopped. The valve 33 is electrically connected to a control device 80 (described later) and its opening and closing are controlled by the control device 80.

[0024] (wetted part) The liquid receiving section 40 is provided in a manner that surrounds the rotating holding section 10, and receives the processing liquid Lp and rinsing liquid Lc that are splashed from the rotating substrate W. The liquid receiving section 40 discharges the received processing liquid Lp and rinsing liquid Lc outside the substrate processing apparatus 1.

[0025] The liquid receiving part 40 has a cup part 41 and a receiving part 42. The cup part 41 is a curved cylindrical body that covers the circumference of the rotating holding part 10 at intervals and narrows in diameter at the top. The cup part 41 is movably disposed between a standby position (see Figure 3) and a processing position (see Figures 1 and 2) by means of a lifting mechanism (not shown). The receiving part 42 is an annular container located below the cup part 41 and open at the top.

[0026] The processing liquid Lp and rinsing liquid Lc that splash from the substrate W are caught by the cup portion 41 and fall downward along the inner wall of the cup portion 41, thus flowing into the receiving portion 42. The processing liquid Lp and rinsing liquid Lc that flow into the receiving portion 42 are discharged from the substrate processing apparatus 1 through a discharge port (not shown) formed on the bottom surface of the receiving portion 42.

[0027] (Heating section) The heating unit 50 irradiates the substrate W, which is held and rotated by the rotating holding unit 10, with light from the light-emitting element 51, thereby heating the substrate W. The processing liquid Lp supplied to the vicinity of the center of the substrate W flows outward toward the outer edge of the substrate W by centrifugal force. At this time, without further heating, the supplied high-temperature (160°C) processing liquid Lp will decrease in temperature as it flows on the substrate W due to heat conduction or dissipation toward the substrate W. Therefore, by heating the substrate W, the processing liquid Lp on the substrate W can be heated by heat conduction from the substrate W, thereby maintaining the processing liquid Lp on the substrate W at a high temperature. In addition, the output of the heating unit 50 can be controlled so that not only the temperature of the processing liquid Lp is maintained, but the temperature of the substrate W is further increased.

[0028] The light-emitting element 51 emits light (electromagnetic waves) of a wavelength that heats the substrate W by being absorbed by it. Furthermore, the light emitted by the light-emitting element 51 is light of a wavelength that is transmitted through the processing liquid Lp. Here, "absorbed by the substrate W" means that the light incident on the substrate W is absorbed to a degree sufficient to heat the substrate W; this includes not only complete absorption by the substrate W, but also cases where a portion of the light is reflected or transmitted through the substrate W. "Transmitted through the processing liquid Lp" means that the light incident on the processing liquid Lp is transmitted through the processing liquid Lp to a degree sufficient to heat the substrate W, and also cases where a portion of the light is absorbed or reflected by the processing liquid Lp.

[0029] As the light-emitting element 51, an LED that emits light for heating is used, for example. The wavelength of the light emitted by the LED is, for example, 350 nm to 1060 nm (350 nm or more and 1060 nm or less). More preferably, the center wavelength is 395 nm to 940 nm (395 nm or more and 940 nm or less). In this embodiment, an LED with a center wavelength of 395 nm is used. In addition, the output of the light-emitting element 51 is controlled by the control device 80 described later. Figure 4 shows the transmission spectra relative to the phosphoric acid solution and the Si substrate. In addition, the ultraviolet-visible-near-infrared spectrophotometer (V-770) of Nippon Spectrophotometer Co., Ltd. was used to measure each transmission spectrum. As shown in the graph of Figure 4, 350 nm to 1060 nm is the wavelength with high transmittance (transmittance of 70% or more) relative to the phosphoric acid solution and high absorptivity (transmittance of approximately 0%) relative to the Si substrate.

[0030] Therefore, even when light from the light-emitting element 51 is shone from above the processing liquid Lp supplied to the substrate W, which is above the space above the substrate W, the light can still pass through the processing liquid Lp on the substrate W and be absorbed by the substrate W, thereby heating the substrate W. Furthermore, due to the heat conduction from the substrate W, the temperature of the processing liquid Lp rises, thereby increasing the etching rate (processing rate).

[0031] In addition to the light-emitting elements 51, the heating unit 50 also includes a support 52 and a cover 53. The support 52 is a member that supports multiple light-emitting elements 51. The support 52 is a cylindrical member whose upper end is closed by a top plate 521. The diameter of the support 52 is the same as or larger than the diameter of the substrate W. The support 52 is disposed above the rotating platform 11 at a distance from the opposing surface 11a. Thus, the heating unit 50 is configured to irradiate light from the light-emitting elements 51 from above the space where the substrate W is held by the rotating holding part 10. Furthermore, two through holes 521a and 521b are provided near the center of the top plate 521 of the support 52.

[0032] As shown in Figure 5, the cover 53 is a circular plate-shaped member that covers the end of the support 52 facing the rotating platform 11. The cover 53 is formed of a material that is resistant to the processing liquid Lp and transmits light emitted from the light-emitting element 51. For example, a quartz cover 53 is used. Moreover, two through holes 53a and 53b are formed near the center C of the cover 53. In addition, in Figure 5, the light-emitting element 51 as seen through the cover 53 is shown in solid lines.

[0033] As shown in Figure 1, the processing liquid nozzle 21 is inserted through the through holes 521a and 53a with its front end outlet 21a protruding from the cover 53 and facing the substrate W. The rinsing liquid nozzle 31 is inserted through the through holes 521b and 53b with its front end outlet 31a protruding from the cover 53 and facing the substrate W.

[0034] In the support portion 52, a plurality of light-emitting elements 51 are mounted facing the rotating platform 11 with a clamping cover 53. The heating portion 50 has multiple regions for arranging the light-emitting elements 51. That is, the plurality of light-emitting elements 51 are arranged in multiple regions. In this embodiment, the light-emitting elements 51 are provided in regions corresponding to different positions in the radial direction of the substrate W, and the output of the light-emitting elements 51 can be controlled according to each region. Moreover, the plurality of light-emitting elements 51 are arranged so that light can be irradiated onto the entire surface of the substrate W to be processed.

[0035] For example, as shown in Figure 5, the multiple light-emitting elements 51A to 51D are arranged in four concentric annular regions R1 to R4 (represented by two-point chains in the figure), thereby enabling output control corresponding to each region R1 to R4. Each region R1 to R4, excluding the fan-shaped region where the temperature measuring unit 70 is located (described later), does not have a light-emitting element 51. In the following description, regions R1 to R4 will be referred to simply as region R. Furthermore, light-emitting elements 51A to 51D will be referred to simply as light-emitting element 51.

[0036] Furthermore, in Figure 5, the spacing between the light-emitting elements 51 corresponding to the boundaries of each region R is increased to facilitate identification of region R. However, as long as the controlled region R is distinguished, the spacing between the light-emitting elements 51 can also be equal. Moreover, the number of light-emitting elements 51 is not limited to the number shown in Figure 5. For example, hundreds to thousands of light-emitting elements 51 can be densely arranged as a whole. By rotating the substrate W relative to the multiple light-emitting elements 51, light can be irradiated onto the entire substrate W, thereby heating the entire surface of the substrate W.

[0037] (Lifting mechanism) As shown in Figure 1, the lifting mechanism 60 supports the heating unit 50 and raises and lowers it. The lifting mechanism 60 has an arm 61 and a support column 62. The arm 61 is a member extending in a direction parallel to the substrate W, and one end is connected to the outer periphery of the support unit 52. The support column 62 is erected in a direction orthogonal to the substrate W and supports the other end of the arm 61. The support column 62 is movable up and down by a drive source such as a ball screw mechanism or a cylinder (not shown).

[0038] The heating unit 50 is positioned at any height among the following positions: the loading / unloading position P1, the heating position P2, and the rinsing position P3, driven by the lifting mechanism 60. The positions are as follows. Move-out / move-in position P1: A height position separated from the rotating platform 11 upwards to allow the hand H of the transport robot to be inserted (see Figure 3). Heating position P2: A position closer to the substrate W at a higher height than the move-out / move-in position P1 (see Figure 1). However, it is not in contact with the processing liquid Lp on the substrate W. Rinse position P3: Height position between the move-out / move-in position P1 and the heating position P2 (see Figure 2).

[0039] (Temperature Measurement Department) The temperature measuring unit 70 uses a radiation thermometer 71 to measure the temperature of the processing liquid Lp, which is heated due to contact with the substrate W. The radiation thermometer 71 is a thermometer that focuses light (electromagnetic waves) radiated from an object onto a detection element and outputs an electrical signal corresponding to the temperature. In this embodiment, the radiation thermometer 71 measures the temperature of the processing liquid Lp non-contactly based on the light radiated from the processing liquid Lp. More specifically, the light receiving unit 71a receives the light radiated from the processing liquid Lp and calculates the temperature of the processing liquid Lp based on its light intensity.

[0040] Radiation thermometers 71 are respectively provided at positions corresponding to multiple regions R. That is, a number of radiation thermometers 71 are provided corresponding to multiple regions R. In this embodiment, four radiation thermometers 71A to 71D are fixed to the support 52 corresponding to regions R1 to R4. In addition, without distinguishing between radiation thermometers 71A to 71D, they are simply referred to as radiation thermometers 71.

[0041] More specifically, as shown in Figures 1 and 5, through holes 521c and 53c are formed on the circumferences of the fan-shaped areas in the cover 53 and support 52 where no light-emitting element 51 is disposed, and on the circumferences corresponding to the areas R1 to R4 where the light-emitting element 51 is disposed. The support 521c and the cover 53 have four through holes corresponding to the four areas R1 to R4, respectively.

[0042] Each radiation thermometer 71A-71D is inserted into each through hole 521c and fixed such that the light-receiving part 71a faces the substrate W held by the rotating holding part 10 through each through hole 53c. The radiation thermometer 71 is electrically connected to the control device 80. The measuring wavelength of the radiation thermometer 71 is set to a wavelength that can measure the intensity of light emitted from the processing liquid Lp. Moreover, it is preferable that the measuring wavelength of the radiation thermometer 71 is different from the wavelength of the light emitted by the light-emitting element 51. By setting the measuring wavelength of the radiation thermometer 71 to be different from the wavelength of the light emitted by the light-emitting element 51, stray light from the radiation thermometer 71 can be prevented, thereby suppressing measurement errors.

[0043] For example, when the treatment solution Lp is a phosphoric acid solution, it is preferable to set the measurement wavelength to 2.2 μm to 2.4 μm (above 2.2 μm and below 2.4 μm). In this embodiment, the measurement wavelength is set to 2.3 μm. The reason for this preferred measurement wavelength of 2.2 μm to 2.4 μm is as follows.

[0044] Specifically, the absorption spectra of phosphoric acid solution (concentration 85 wt%, concentration 93 wt%) and water (H₂O) in the range of 1 μm to 2.5 μm based on infrared spectroscopy are shown in Figure 6. Furthermore, the measurements were performed using a Shimadzu UV / Vis / NIR spectrophotometer (SolidSpec-3700 DUV).

[0045] As shown in Figure 6, within the wavelength range of 2.2 μm to 2.4 μm, the absorbance of phosphoric acid solution is high, while that of water is low. That is, 2.2 μm to 2.4 μm represents the wavelength range where the intensity ratio of phosphoric acid solution to water is high. By setting this wavelength as the measurement wavelength of the radiation thermometer 71, even if water vapor is generated during processing, the influence of water vapor can be suppressed, and the temperature of the treatment solution Lp can be measured.

[0046] (Control device) The control device 80 controls each part of the substrate processing apparatus 1. To realize the various functions of the substrate processing apparatus 1, the control device 80 has a processor for executing programs, a memory for storing various information such as programs and operating conditions, and drive circuits for driving each component. Specifically, the control device 80 controls the rotary holding unit 10, the processing liquid supply unit 20, the rinsing liquid supply unit 30, the liquid receiving unit 40, the heating unit 50, the lifting mechanism 60, the temperature measuring unit 70, etc.

[0047] More specifically, as shown in Figure 7, the control device 80 includes a mechanism control unit 81, a temperature control unit 82, and a memory unit 83. The mechanism control unit 81 controls the operation of the opening and closing mechanism of the rotary holding unit 10, the drive unit 13, the heater 23 of the processing fluid supply unit 20, the valve 24, the valve 33 of the rinsing fluid supply unit 30, the lifting mechanism of the receiving unit 40, and the lifting mechanism 60.

[0048] The temperature control unit 82 controls the heating temperature of the substrate W by the heating unit 50 based on the temperature of the processing liquid Lp measured by the temperature measuring unit 70. The memory unit 83 stores information required for processing by each part of the substrate processing apparatus 1. For example, the memory unit 93 stores the target temperature of the processing liquid Lp and the emissivity of the processing liquid Lp.

[0049] The radiation thermometer 71 calculates the temperature of the processing liquid Lp on the substrate W by correcting the measured light intensity based on the emissivity of the processing liquid Lp pre-memorized in the memory unit 93. The calculated temperature is then sent to the control device 80. The temperature control unit 82 adjusts the light intensity of the light-emitting element 51 of the heating unit 50 to heat the substrate W, so that the temperature of the processing liquid Lp reaches the target temperature. At this time, the temperature of the processing liquid Lp in each region R1 to R4 is controlled by adjusting the light intensity of each light-emitting element 51A to 51D based on the temperature of the processing liquid Lp measured by the radiation thermometers 71A to 71D in each region R1 to R4. In other words, the control device 80 controls the output of the light-emitting element 51 in each of the multiple regions R based on the temperature of the substrate W measured by the radiation thermometer 71.

[0050] Additionally, an input unit 84 is connected to the control device 80. The input unit 84 may include, for example, a touch panel, keyboard, mouse, etc. The operator can input information required for processing the substrate W, such as the target temperature of the processing liquid Lp and the emissivity of the processing liquid Lp, via the input unit 84.

[0051] [action] In addition to Figures 1 to 7, the operation of the substrate processing apparatus 1 of this embodiment as described above will be explained with reference to the flowchart in Figure 8. Furthermore, a substrate processing method for processing the substrate W using the process described below is also a form of this embodiment.

[0052] As shown in Figure 3, the heating unit 50 is pre-positioned in the transfer / in position P1, and the cup unit 41 is positioned in the standby position. The valve 24 of the processing fluid supply unit 20 and the valve 33 of the rinsing fluid supply unit 30 are closed.

[0053] In this state, the chuck pin 12 is in the open position. After the substrate W, mounted on the hand H of the transfer robot, is moved between the heating unit 50 and the rotating platform 11, the chuck pin 12 is in the closed position, thereby supporting the periphery of the substrate W by the chuck pin 12. Thus, the substrate W is held on the opposing surface 11a of the rotating platform 11, spaced apart from it (step S01). At this time, the substrate W is positioned so that its center is aligned with the rotation axis of the rotating platform 11. Subsequently, the cup portion 41 rises and is positioned at the processing position (step S02).

[0054] Next, as shown in Figure 2, the substrate W held by the chuck pin 12 starts to rotate as the rotating platform 11 rotates, and the heating part 50 descends and is positioned at the rinsing position P3 (step S03).

[0055] Subsequently, the valve 33 of the rinsing fluid supply unit 30 opens, and rinsing fluid Lc is sprayed from the rinsing fluid nozzle 31 onto the vicinity of the center of the substrate W (step S04). When rinsing fluid Lc is supplied to the rotating substrate W, the rinsing fluid Lc moves sequentially toward the outer periphery of the substrate W and expands to the entire surface of the substrate W to be processed.

[0056] Without the supply of this rinsing fluid Lc, when the processing fluid Lp is supplied, surface tension will prevent the processing fluid Lp from wetting and spreading to the entire surface of the substrate W to be processed, resulting in uneven processing. In this embodiment, to prevent such uneven processing, the rinsing fluid Lc is supplied in this step before the processing fluid Lp is supplied. When the predetermined rinsing time has elapsed (yes in step S05), the valve 33 of the rinsing fluid supply unit 30 is closed, and the spraying of the rinsing fluid Lc from the rinsing fluid nozzle 31 stops (step S06).

[0057] Next, as shown in Figure 1, the heating unit 50 begins to descend, stopping at the heating position P2 (step S07). Then, the valve 24 of the processing liquid supply unit 20 opens, spraying processing liquid Lp from the processing liquid nozzle 21 onto the vicinity of the center of the substrate W (step S08). When processing liquid Lp is supplied to the rotating substrate W, it moves sequentially towards the outer periphery of the substrate W, expanding to the entire surface of the substrate W to be processed. Since rinsing liquid Lc is pre-supplied to the surface of the substrate W to be processed, the processing liquid Lp wets and expands to the entire surface of the substrate W to be processed, preventing uneven processing.

[0058] Simultaneously with the ejection of the processing liquid Lp, heating of the substrate W is initiated by irradiation with light from the light-emitting element 51, and temperature measurement of the processing liquid Lp is performed using a radiation thermometer 71. During the heating process of the substrate W, the temperature control unit 82 of the control device 80 performs feedback control on the output of the light-emitting element 51 based on the temperature measurement result of the processing liquid Lp, thereby ensuring that the temperature of the processing liquid Lp on the substrate W is at the target temperature (step S09). Even if water vapor (H2O) is present due to heating, the low absorbance of water allows the measurement wavelength of the radiation thermometer 71 to suppress the influence of water vapor and measure the temperature of the processing liquid Lp. This process continues until the predetermined processing time has elapsed (step S10, no).

[0059] If the prescribed processing time has elapsed (as in step S10), the valve 24 of the processing liquid supply unit 20 is closed, stopping the supply of processing liquid Lp from the processing liquid nozzle 21 (step S11). At the same time, the irradiation of light from the light-emitting element 51 and the temperature measurement performed by means of the radiation thermometer 71 are stopped.

[0060] As shown in Figure 2, the heating unit 50 begins to rise, reaches the rinsing position P3, and stops (step S12). Then, the valve 33 of the rinsing liquid supply unit 30 opens, and rinsing liquid Lc is sprayed from the rinsing liquid nozzle 31 near the center of the substrate W (step S13). When rinsing liquid Lc is supplied to the rotating substrate W, the rinsing liquid Lc moves sequentially toward the outer periphery of the substrate W and expands to the entire surface of the substrate W being processed.

[0061] When rinsing solution Lc is supplied to the phosphoric acid solution processing solution Lp, a large amount of water vapor is generated. At this time, since the heating section 50 is located further away from the substrate W than the heating position P2, i.e., the rinsing position P3, the adhesion of water vapor to the heating section 50 can be suppressed. Moreover, since the rinsing position P3 is closer to the substrate W than the transfer-out / transfer-in position P1, liquid splashing can be suppressed, thereby suppressing the adhesion of droplets to the heating section 50.

[0062] When the prescribed rinsing time has elapsed (as in step S14), the valve 33 of the rinsing fluid supply unit 30 closes, and the spraying of rinsing fluid Lc from the rinsing fluid nozzle 31 stops (step S15). The rotating platform 11 stops, and the substrate W held by the chuck pin 12 stops rotating (step S16). Subsequently, the cup part 41 descends and is positioned in the standby position (step S17).

[0063] As shown in Figure 3, the heating unit 50 rises and is positioned at the move-out / move-in position P1 (step S18). In this state, the hand H of the transfer robot is inserted under the substrate W, and the chuck pin 12 is in the open position, thereby placing the substrate W on the hand H of the transfer robot and moving it to the outside (step S19). At this time, the substrate W is held in a state with rinsing liquid Lc.

[0064] [Effect] (1) The substrate processing apparatus 1 of this embodiment includes: a rotation holding section 10, which holds the substrate W and rotates it; a processing liquid supply section 20, which supplies processing liquid Lp to the substrate W held and rotated by the rotation holding section 10; a heating section 50, which has a light-emitting element 51 that emits light of a wavelength absorbed by the substrate W, and heats the substrate W by irradiating the substrate W held and rotated by the rotation holding section 10 with light from the light-emitting element 51; and a temperature measuring section 70, which has a radiation thermometer 71 that measures the temperature of the processing liquid Lp non-contactly based on the light radiated from the processing liquid Lp, and measures the temperature of the processing liquid Lp that is heated due to contact with the substrate W by means of the radiation thermometer 71.

[0065] Therefore, by heating the substrate W while simultaneously measuring the temperature of the processing liquid Lp in contact with the substrate W, rather than the temperature of the substrate W itself, the processing rate of the substrate W can be controlled with high precision. As mentioned above, the emissivity varies depending on the type of substrate W. Therefore, in order to accurately measure the temperature of the substrate W using the radiation thermometer 71, the emissivity must be determined for each type of substrate W and the radiation thermometer 71 must be set accordingly.

[0066] On the other hand, in this embodiment, the temperature of the processing liquid Lp is measured by a radiation thermometer 71, rather than the temperature of the substrate W. That is, the measurement wavelength of the radiation thermometer 71 is set to a wavelength capable of measuring the intensity of light emitted from the processing liquid Lp. The emissivity set for the radiation thermometer 71 can be the emissivity of the processing liquid Lp, therefore it is not necessary to calculate the emissivity for each type of substrate W and set the radiation thermometer 71 accordingly. Furthermore, the substrate W is heated by the light-emitting element 51, thereby heating the processing liquid Lp through heat conduction from the heated substrate W. Therefore, the temperature change of the processing liquid Lp will follow the temperature change of the substrate W. By measuring the intensity of light emitted from the processing liquid Lp, temperature information can be obtained even for different types of substrates W. Furthermore, by changing the output of the light-emitting element 51 based on the temperature information, the processing rate can be controlled.

[0067] (2) The light from the light-emitting element 51 is light of the wavelength that has been transmitted through the processing liquid Lp. The heating part 50 is configured to irradiate the light from the light-emitting element 51 from above the space where the substrate W is held by the rotating holding part 10.

[0068] By irradiating light of the wavelength transmitted through the processing liquid Lp from above the substrate W as described above, the substrate W can be heated starting from the surface to be processed. That is, heating can be performed starting from the interface between the substrate W and the processing liquid Lp, thereby efficiently heating the processing liquid Lp on the substrate W.

[0069] (3) The processing liquid Lp supplied by the processing liquid supply unit 20 is an aqueous solution containing phosphoric acid, and the measurement wavelength of the radiation thermometer 71 is 2.2 μm to 2.4 μm. Therefore, the temperature of the processing liquid Lp can be measured while suppressing the influence of water vapor. That is, when heated processing liquid Lp is sprayed out, or when rinsing liquid Lc is supplied to the heated processing liquid Lp on the substrate W, steam (water vapor) is generated. If water vapor is present in the optical path of the radiation thermometer 71, light radiated from the water vapor will also be detected, which may sometimes affect the measurement result of the radiation thermometer 71. That is, the intensity of light radiated from the processing liquid Lp on the substrate W may not be accurately measured, and the result may deviate from the actual temperature.

[0070] As described above, in a phosphoric acid solution, the absorbance of the phosphoric acid solution is high and that of water is low at wavelengths of 2.2 μm to 2.4 μm (Figure 6). That is, these wavelengths represent the wavelengths with a higher intensity ratio between phosphoric acid and water. Therefore, by setting the measurement wavelength of the radiation thermometer 71 to 2.2 μm to 2.4 μm, even if water vapor is generated, the influence of water vapor can be suppressed, allowing for the measurement of the temperature of the treatment solution Lp. By setting the measurement wavelength to the wavelength with high absorbance for the treatment solution Lp and low absorbance for water—that is, a wavelength easily absorbed by the treatment solution Lp but difficult to be absorbed by water—as described above, the influence of water vapor can be suppressed, allowing for a more accurate measurement of the temperature of the treatment solution Lp.

[0071] (4) The light emitted by the light-emitting element 51 is light with a wavelength in the range of 350 nm to 1060 nm. Therefore, the light from the light-emitting element 51 can be transmitted through a processing liquid Lp such as a perphosphoric acid solution to heat the substrate W such as a silicon wafer.

[0072] (5) The heating section 50 has multiple regions R on which light-emitting elements 51 are disposed. Radiation thermometers 71 are respectively provided at positions corresponding to the multiple regions R. The substrate processing apparatus has a control device 80, which controls the output of the light-emitting elements 51 for each of the multiple regions R based on the temperature of the substrate W measured by the radiation thermometers 71. Therefore, it is possible to make the temperature of the entire region uniform in case the temperature of the processing liquid Lp supplied to the center of the substrate W decreases as it expands toward the outer edge of the substrate W, or to set the desired region R to a high temperature or a low temperature in case the processing rate of the substrate W is to be locally changed.

[0073] (6) Multiple regions R correspond to different positions in the radial direction of the substrate W. Therefore, it is possible to change the heating temperature of each region on the concentric circle of the rotating substrate W to make the processing rate uniform across the entire substrate W, or to change the processing rate locally.

[0074] (7) Multiple light-emitting elements 51 are arranged in such a way that they can illuminate the entire surface of the substrate W to be processed. Therefore, the processing rate of the entire surface of the substrate W to be processed can be controlled.

[0075] (8) The heating unit 50 is provided with a lifting mechanism 60 that raises and lowers the heating unit 50. When the processing liquid Lp is supplied to the substrate W from the processing liquid supply unit 20, the lifting mechanism 60 positions the heating unit 50 at a heating position P2 closer to the substrate W than when the substrate W is moved out / in. Therefore, space can be ensured for moving out / in the substrate W, and the heating unit 50 can be brought close to the substrate W during processing for efficient heating.

[0076] [Variation Example] (1) The processing performed by the substrate processing apparatus 1 is not limited to etching. Any apparatus that heats the substrate W while supplying a processing solution Lp for processing is acceptable. For example, it can also be a resist removal process to remove the resist film formed on the substrate W.

[0077] (2) The treatment solution Lp is not limited to phosphoric acid solution. Any treatment solution Lp that requires heating can be used. For example, hydrofluoric acid can also be used. Moreover, in the case of resist removal treatment, sulfuric acid peroxide mixture (SPM) (aqueous solution of sulfuric acid and hydrogen peroxide) can also be used as the treatment solution Lp.

[0078] (3) The substrate W to be processed may also be a Si substrate with a resist formed on its surface. Furthermore, the substrate W is not limited to a Si substrate. For example, it may also be a SiC substrate (silicon carbide wafer).

[0079] (4) The number and arrangement of the light-emitting elements 51 are not limited to the forms illustrated above. Furthermore, there can be multiple regions R, not just four. Moreover, temperature measurement by means of the radiation thermometer 71 and heating by means of the light-emitting elements 51 can be controlled without dividing the area into multiple regions R. Light from the light-emitting elements 51 can also be guided through an optical fiber and emitted onto the substrate W. Therefore, it is not necessary to place the light-emitting elements 51 above the substrate W.

[0080] (5) In the above configuration, the rinsing fluid nozzle 31 is configured to penetrate the support 52 and the cover 53, but a mechanism can also be provided to move the rinsing fluid nozzle 31 in the horizontal direction. When the rinsing fluid Lc is supplied, the rinsing fluid nozzle 31 is moved to the upper part of the center of the substrate W.

[0081] (6) The support portion 52 for the light-emitting element 51 is a circular member with a diameter that is the same as or larger than the diameter of the substrate W, but is not limited to this. It is acceptable as long as it can irradiate the entire surface of the substrate W relative to the rotating substrate W. For example, it can also be a rectangular member that can cover the radius of the substrate W. As long as it can irradiate the radius of the substrate W, the entire surface of the substrate W can be irradiated by rotating the substrate W. Moreover, the support portion 52 can be provided to swing horizontally, so that the entire surface of the substrate W can be irradiated by swinging it while emitting light from the light-emitting element 51.

[0082] Thus, even when the diameter of the support portion 52 is smaller than that of the substrate W, a mechanism can be provided to move the processing liquid nozzle 21 in the horizontal direction, so that it moves above the substrate W when the processing liquid is supplied. That is, as long as the processing liquid nozzle 21 can supply processing liquid Lp towards the vicinity of the center of the substrate W while irradiating light from the light-emitting element 51, the placement location is irrelevant.

[0083] Alternatively, the light-emitting element 51 can be configured to heat the substrate W by irradiating it with light from below. In this case, it is sufficient to provide a support portion for supporting the light-emitting element 51 on the opposing surface 11a of the rotating platform 11 in a manner that prevents the rotation from the drive unit 13 from being transmitted. Alternatively, it is sufficient to provide a support portion on the opposing surface 11a of the rotating platform 11 that rotates at a different speed relative to the rotational speed (revolutions per unit time) of the rotating platform 11 on the substrate W. Of these, the method of irradiating the upper surface of the substrate W with light from the light-emitting element 51, as described above, allows for heating starting from the interface with the processing liquid Lp, which is therefore preferable.

[0084] (7) Regarding the radiation thermometer 71, it is sufficient to be able to measure the temperature of the processing liquid Lp on the substrate W. Therefore, a mechanism can be provided to move the support of the radiation thermometer 71 in the horizontal direction, so that the radiation thermometer 71 is moved above the substrate W when the temperature is measured.

[0085] [Other Implementation Methods] The embodiments and variations of the present invention have been described above. However, these embodiments and variations are provided as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, combinations, and modifications can be made without departing from the spirit of the invention. These embodiments or variations thereof are included within the scope or spirit of the invention and are included in the invention described in the claims.

[0086] 1: Substrate processing device 10: Rotary retaining part 11: Rotating Platform 11a: Opposing surfaces 12: Chuck pin 13: Drive Unit 20: Processing Fluid Supply Department 21: Processing fluid nozzle 21a, 31a: Ejector nozzles 22: Processing fluid supply pipe 23: Heater 24, 33: Valves 25: Processing fluid supply source 30: Fluid Supply Department 31: Flushing fluid nozzle 32: Fluid supply pipe 34: Fluid supply source 40: Wetted part 41: Cup section 42: Contracting Department 50: Heating section 51, 51A~51D: Light-emitting elements 52: Support section 53: Cover 53a~53c, 521a~521c: Through holes 60: Lifting mechanism 61: Arm 62: Pillar 70: Temperature Measurement Section 71, 71A~71D: Radiation thermometers 71a: Light-receiving part 80: Control device 81: Mechanism Control Department 82: Temperature Control Department 83, 93: Memory Department 84: Input Section 521: Top Plate C: Center H: Hands of the transport robot Lc: Rinse fluid Lp: Treatment fluid P1: Move out / move in location P2: Heating position P3: Rinse Position R, R1~R4: Regions S01~S19: Steps W: substrate

Claims

1. A substrate processing apparatus, characterized by comprising: a rotation holding section for holding and rotating a substrate; a processing liquid supply section for supplying processing liquid to the substrate held and rotated by the rotation holding section; a heating section having a light-emitting element that emits light of a wavelength absorbed by the substrate, thereby heating the substrate by irradiating the substrate held and rotated by the rotation holding section with light from the light-emitting element; and a temperature measuring section having a radiation thermometer for non-contactly measuring the temperature of the processing liquid based on light radiated from the processing liquid, wherein the temperature of the processing liquid heated due to contact with the substrate is measured by the radiation thermometer, the light from the light-emitting element being light of a wavelength that is transmitted through the processing liquid, and the heating section being configured to irradiate the light from the light-emitting element from above the space where the substrate is held by the rotation holding section.

2. The substrate processing apparatus as claimed in claim 1, wherein the radiation thermometer is disposed in a region where the light-emitting element is not disposed.

3. The substrate processing apparatus according to claim 1 or claim 2, wherein the heating unit comprises: a support portion on which the light-emitting element is mounted and supports the light-emitting element; and a cover covering the support portion on which the light-emitting element is mounted, through which light emitted from the light-emitting element is transmitted, wherein the light-emitting element irradiates the substrate with light via the cover and heats the substrate.

4. The substrate processing apparatus of claim 3, wherein the surfaces of the support portion and the cover facing the substrate held by the rotating holding portion are circular, and the diameter of the support portion is the same as or greater than the diameter of the substrate.

5. The substrate processing apparatus of claim 3, wherein a through hole is formed near the center of the support and the cover, the processing liquid supply unit has a processing liquid nozzle for ejecting the processing liquid, and the nozzle tip outlet is inserted into the through hole formed by the support and the cover in a manner facing the center of the substrate held by the rotating holding unit.

6. The substrate processing apparatus of claim 2, wherein the heating unit comprises: a support portion on which the light-emitting element is mounted and supports the light-emitting element; and a cover covering the support portion on which the light-emitting element is mounted, through which light emitted from the light-emitting element is transmitted, the light-emitting element irradiating the substrate with light via the cover and heating the substrate, a through hole being formed in the region of the support portion and the cover, the radiation thermometer being inserted into the through hole formed by the support portion, and the temperature of the processing liquid on the substrate being measured through the through hole formed by the cover.

7. The substrate processing apparatus according to claim 2, wherein the heating unit comprises: a support portion on which the light-emitting element is mounted and supports the light-emitting element; and a cover covering the support portion on which the light-emitting element is mounted, through which light emitted from the light-emitting element is transmitted, the light-emitting element irradiating the substrate with light via the cover and heating the substrate, a through hole being formed near the center of the support portion and the cover, the processing liquid supply portion having a processing liquid nozzle for ejecting the processing liquid, the nozzle tip being inserted into the through hole formed near the center of the support portion and the cover in a manner facing the center of the substrate held by the rotating holding portion, thereby forming a through hole in the region of the support portion and the cover, and a radiation thermometer being inserted into the through hole formed in the region of the support portion and measuring the temperature of the processing liquid on the substrate from the through hole formed in the region of the cover.

8. The substrate processing apparatus as claimed in claim 1 or claim 2, wherein the processing liquid supplied by the processing liquid supply unit is an aqueous solution containing phosphoric acid, and the measuring wavelength of the radiation thermometer is 2.2 μm to 2.4 μm.

9. The substrate processing apparatus as claimed in claim 1 or claim 2, wherein the light emitted by the light-emitting element is light in the wavelength range of 350 nm to 1060 nm.

10. The substrate processing apparatus according to claim 1 or claim 2, wherein the processing liquid supplied by the processing liquid supply unit is an aqueous solution containing phosphoric acid, the measuring wavelength of the radiation thermometer is 2.2 μm to 2.4 μm, the light emitted by the light-emitting element is light in the wavelength range of 350 nm to 1060 nm, and the heating unit is configured to irradiate light from the light-emitting element from above the space where the substrate is held by the rotating holding unit.

11. The substrate processing apparatus of claim 1 or claim 2, wherein the heating unit has a plurality of configuration regions for configuring the light-emitting element, the radiation thermometers are respectively provided at positions corresponding to the plurality of configuration regions, the substrate processing apparatus has a control device that controls the output of the light-emitting element for each of the plurality of configuration regions based on the temperature of the substrate measured by the radiation thermometers.

12. The substrate processing apparatus of claim 11, wherein the plurality of configuration regions correspond to different positions in the radial direction of the substrate.

13. The substrate processing apparatus as claimed in claim 1 or claim 2, wherein the light-emitting elements are arranged in a plurality of such that they can illuminate the entire surface of the substrate being processed.

14. The substrate processing apparatus of claim 1 or claim 2, wherein the heating unit is provided with a lifting mechanism for raising and lowering the heating unit, wherein when the processing liquid is supplied to the substrate from the processing liquid supply unit, the lifting mechanism positions the heating unit closer to the heating position of the substrate than the removal / removal position when the substrate is removed / removed.

15. The substrate processing apparatus of claim 14, wherein the substrate processing apparatus further comprises a rinsing fluid supply unit that supplies rinsing fluid to the substrate held and rotated by the rotating holding unit, and wherein the lifting mechanism positions the heating unit at a height between the out / in position and the heating position when the rinsing fluid is supplied to the substrate from the rinsing fluid supply unit.

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