Exposure method, substrate processing method, and exposure apparatus

Abstract

This invention provides an exposure method, a substrate processing method, and an exposure apparatus. The exposure method includes: continuously performing position detection processing on a first substrate on a substrate holding portion and on a second substrate different from the first substrate, for forming position detection marks; and based on the processing result of the position detection processing, continuously performing an exposure processing to expose the first substrate and the second substrate on the substrate holding portion using predetermined patterned light.

Description

Technical Field

[0001] It relates to an exposure method, a substrate processing method, and an exposure apparatus. Prior Technology

[0002] Various devices, such as liquid crystal display devices or semiconductor devices, are manufactured using a photolithography process that transfers a pattern formed on a mask or similar object onto a photosensitive substrate. In the exposure apparatus used in this photolithography process, for example, the mask and the photosensitive substrate are aligned, then exposure light is shone onto the mask, and the mask stage and the substrate stage on which the photosensitive substrate is placed are scanned simultaneously, while the pattern formed on the mask is transferred to the photosensitive substrate.

[0003] In such exposure apparatuses, multiple substrates are sometimes arranged on a substrate holder that holds the substrate (e.g., Patent Document 1). It is desirable to shorten the time required for a series of processes to transfer the pattern formed on the mask to the photosensitive substrate.

[0004] [Existing Technical Documents] [Patent Literature] [Patent Document 1] Japanese Patent Application Publication No. 2020-194007 Summary of the Invention

[0005] According to the first disclosed state, the exposure method includes: continuously performing position detection processing on a position detection mark formed on a first substrate on a substrate holding portion and a second substrate different from the first substrate; and based on the processing result of the position detection processing, continuously performing an exposure processing to expose the first substrate and the second substrate on the substrate holding portion with a predetermined patterned light.

[0006] According to the second disclosed state, the exposure method exposes a first substrate and a second substrate disposed on a substrate holding portion using a predetermined patterned light, wherein a portion of the exposure process is continuously performed on the first substrate and the second substrate.

[0007] According to the third disclosed state, the substrate processing method performs a first processing on a plurality of substrates disposed on a substrate holding portion and a second processing different from the first processing. In the substrate processing method, after the first processing is performed on the plurality of substrates consecutively, the second processing is performed on the plurality of substrates consecutively.

[0008] According to the fourth disclosed sample, the exposure apparatus includes: a position detection unit for detecting the position of position detection marks formed on a first substrate and a second substrate arranged side-by-side along a first direction on a substrate holding unit; and an exposure control unit for driving the substrate holding unit along the first direction and exposing the first substrate and the second substrate to a predetermined patterned light, wherein the position detection unit continuously performs position detection of the position detection marks on the first substrate and position detection of the position detection marks on the second substrate, and the exposure control unit exposes the first substrate and the second substrate to the predetermined patterned light based on the position detection results of the position detection marks on the first substrate and the position detection results of the position detection marks on the second substrate.

[0009] Furthermore, the structure of the embodiments described later can be appropriately modified, and at least a portion can be replaced with other components. Moreover, the constituent elements whose arrangement is not particularly limited are not limited to the arrangement revealed in the embodiments, and can be arranged in positions where their function can be achieved. Simple Explanation of the Diagram

[0010] Figures 1(A) and 1(B) are schematic diagrams showing the structure of the exposure apparatus in an embodiment. Figures 2(A) and 2(B) are diagrams showing examples of substrate placement on a substrate stage. Figure 3(A) shows an example of a full-size substrate mounted on a substrate stage, and Figure 3(B) is a diagram illustrating the process performed by the exposure apparatus when transferring a mask pattern onto a full-size substrate mounted on a substrate stage. Figure 4(A) is a diagram showing multiple half-size substrates mounted on a substrate stage, and Figure 4(B) is a diagram illustrating the process performed by the exposure apparatus of the comparative example when transferring the mask pattern onto the multiple half-size substrates mounted on the substrate stage. Figures 5(A) to 5(D) are diagrams showing the movement of the substrate stage when the mask pattern is transferred to multiple half-size substrates according to the processing order of the comparative example (one of them). Figures 6(A) to 6(D) are diagrams showing the movement of the substrate stage when the mask pattern is transferred to multiple half-size substrates according to the processing order of the comparative example (the second one). Figures 7(A) to 7(D) are diagrams showing the movement of the substrate stage when the mask pattern is transferred to multiple half-size substrates according to the processing order of the comparative example (third example). Figures 8(A) and 8(B) are diagrams (fourth) showing the movement of the substrate stage when the mask pattern is transferred to multiple half-size substrates according to the processing sequence of the comparative example. Figure 9 is a diagram illustrating the process performed by the exposure apparatus of the embodiment when transferring the pattern of the mask to multiple half-size substrates. Figures 10(A) to 10(D) are diagrams (one of which) showing the movement of the substrate stage when the mask pattern is transferred to multiple half-size substrates according to the processing sequence of the embodiment. Figures 11(A) to 11(D) are diagrams (second part) showing the movement of the substrate stage when the mask pattern is transferred to multiple half-size substrates according to the processing sequence of the embodiment. Figures 12(A) to 12(D) are diagrams (third one) showing the movement of the substrate stage when the mask pattern is transferred to multiple half-size substrates according to the processing sequence of the embodiment. Figures 13(A) to 13(B) are diagrams (fourth) showing the movement of the substrate stage when the mask pattern is transferred to multiple half-size substrates according to the processing sequence of the embodiment. Figure 14(A) is a diagram showing the movement path of the substrate stage when the mask pattern is transferred to multiple half-size substrates according to the processing order of the comparative example, and Figure 14(B) is a diagram showing the movement path of the substrate stage when the mask pattern is transferred to multiple half-size substrates according to the processing order of the embodiment. Implementation

[0011] The exposure apparatus 10 of the embodiment will be described with reference to the drawings.

[0012] (Structure of the exposure apparatus) The structure of the exposure apparatus 10 of this embodiment will be described. Figures 1(A) and 1(B) are schematic diagrams showing the structure of the exposure apparatus 10 of this embodiment.

[0013] The exposure apparatus 10 is a scanning stepper (scanner) that transfers the pattern formed on the mask MSK onto the substrate P by driving the mask MSK and the glass substrate (hereinafter referred to as "substrate") P in the same direction and at the same speed relative to the projection optical system PL.

[0014] Hereinafter, the direction in which the mask MSK and substrate P are driven during scanning exposure (scanning direction) is set as the X-axis direction, the direction in the horizontal plane orthogonal to this is set as the Y-axis direction, the direction orthogonal to the X-axis and Y-axis is set as the Z-axis direction, and the rotation (tilt) directions around the X-axis, Y-axis and Z-axis are set as the θx direction, θy direction and θz direction, respectively.

[0015] The exposure apparatus 10 includes: an illumination system IOP, a mask stage MST for holding a mask MSK, a projection optics system PL, an alignment system ALG (see Figure 1(B)), a main body 70 for supporting these components, a substrate stage PST for holding a substrate P, and a control system CNT for these components. The control system CNT provides overall control over all components of the exposure apparatus 10.

[0016] The main body 70 includes: a base (vibration damping platform) 71, pillars 72A and 72B, an optical platform 73, a support body 74, and a sliding guide 75. The base (vibration damping platform) 71 is disposed on the ground F and supports pillars 72A and 72B to dampen vibrations from the ground F. Pillars 72A and 72B each have a frame shape, with pillar 72A disposed inside pillar 72B. The optical platform 73 has a flat plate shape and is fixed to the top of pillar 72A. The support body 74 is supported on the top of pillar 72B via the sliding guide 75. The sliding guide 75 includes an air balloon lift and a positioning mechanism, positioning the support body 74 (i.e., the shielding platform MST described later) relative to the optical platform 73 at an appropriate position in the X-axis direction.

[0017] The lighting system IOP is positioned above the main body 70. The lighting system IOP illuminates the shield MSK with illumination light IL.

[0018] The mask stage MST is supported by a support 74. A mask MSK having a patterned surface (the lower surface in Figures 1(A) and 1(B)) with a circuit pattern is fixed to the mask stage MST, for example, by vacuum adsorption (or electrostatic adsorption). The mask stage MST is driven, for example, by a drive system including a linear motor, along the scanning direction (X-axis direction) with a predetermined stroke, and by minute drive along the non-scanning directions (Y-axis direction and θz direction).

[0019] The position information (including rotation information in the θz direction) of the masking stage MST in the XY plane is measured by an interferometer system. The interferometer system measures the position of the masking stage MST by illuminating a measuring beam onto a moving mirror (or a mirror-finished reflective surface (not shown)) located at one end of the masking stage MST and receiving the reflected light from the moving mirror. The measurement results are supplied to the control system CNT, which, based on the interferometer system's measurement results, drives the masking stage MST via a drive system.

[0020] The projection optical system PL is supported by an optical platform 73 below (on the -Z side) the mask stage MST. The projection optical system PL is configured, for example, similar to the projection optical system disclosed in U.S. Patent No. 5,729,331, with multiple (e.g., seven) projection optical units 100 (multi-lens projection optical units) arranged in an alternating pattern to form an image field with the Y-axis as its long side. Here, four projection optical units 100 are arranged at predetermined intervals in the Y-axis direction, and the remaining three projection optical units 100 are separated from the four projection optical units 100 towards the +X side and arranged at predetermined intervals in the Y-axis direction. Each of the multiple projection optical units 100 may, for example, use a unit that forms an upright image in a telecentric, equal-magnification system. Furthermore, the multiple projection areas of the alternatingly arranged projection optical units 100 are collectively referred to as the exposure area.

[0021] When the illumination area on the mask MSK is illuminated by the illumination light IL from the illumination system IOP, the projection image (partially upright image) of the circuit pattern of the mask MSK within the illumination area is formed on the substrate P disposed on the image plane side of the projection optical system PL using the illumination light IL passing through the mask MSK. Here, a photosensitive material (resist) is coated on the surface of the substrate P. By synchronously driving the mask stage MST and the substrate stage PST, that is, driving the mask MSK in the scanning direction (X-axis direction) relative to the illumination area (illumination light IL) and driving the substrate P in the same scanning direction relative to the exposure area (illumination light IL), the substrate P is exposed, and the pattern of the mask MSK is transferred onto the substrate P.

[0022] The substrate stage PST is disposed on the base (vibration damping stage) 71 below (on the -Z side) of the projection optical system PL. The substrate P is held on the substrate stage PST by a substrate holder (not shown). Figures 2(A) and 2(B) are diagrams showing an example of substrate placement on the substrate stage PST.

[0023] In this embodiment, as shown in FIG2(A), the substrate stage PST has a size that allows a substrate P of size G6 (1850 mm × 1500 mm) to be placed without protruding from the substrate stage PST. That is, as shown in FIG2(B), the substrate stage PST has a size that can accommodate two substrates HP of half size G6 obtained by dividing the substrate P of size G6 (1850 mm × 1500 mm) in half. Furthermore, the size of the substrate P placed on the substrate stage PST is not limited to the size G6; it can be a size larger than or smaller than the size G6. Furthermore, when the size of the substrate P placed on the substrate stage PST is larger than the size G6, the size of the substrate stage PST is designed so that the substrate P can be placed without protruding from the substrate stage PST. In addition, the number of substrates HP placed on the substrate stage PST is not limited to one or two; it can be three or more. Furthermore, in the following description, the G6 size substrate will sometimes be referred to as a full-size substrate, and the G6 half-size substrate will be referred to as a half-size substrate.

[0024] The substrate stage PST is driven by a drive system including a linear motor along the scanning direction (X-axis direction) with a specified stroke. The substrate stage PST can move in steps along the Y-axis direction and is driven minutely along the θz direction.

[0025] The position information (including rotation information (yaw (rotation θz in the θz direction), pitch (rotation θy in the θy direction), and roll (rotation θx in the θx direction))) of the substrate stage PST in the XY plane is measured by an interferometer system. The interferometer system measures the position of the substrate stage PST by illuminating a measuring beam from the optical platform 73 onto a moving mirror (or a mirror-finished reflective surface (not shown)) located at the end of the substrate stage PST and receiving the reflected light from the moving mirror. Alternatively, as described in Japanese Patent Application Publication No. 2008-270342, the interferometer measures the position of the substrate stage PST in the Z direction by illuminating a measuring beam onto a measuring mirror located on the substrate stage PST and having a reflective surface tilted at 45 degrees relative to the XZ plane (and / or YZ plane). The measurement results are supplied to the control system CNT, which drives the substrate stage PST according to the measurement results of the interferometer system.

[0026] As shown in Figure 1(B), the alignment system ALG is set between the projection optical units 100 that are separately arranged in the X-axis direction, and detects the alignment mark ALM set on the full-size substrate P or the half-size substrate HP.

[0027] Figure 3(A) shows an example of a full-size substrate P mounted on a substrate stage PST. In Figure 3(A), multiple exposure target areas (exposure unit areas) EA1 to EA4 for image projection of a pattern for masking MSK are provided on the surface of the full-size substrate P. In this embodiment, four exposure target areas EA1 to EA4 are provided on the surface of the full-size substrate P. Exposure target areas EA1 and EA2 are arranged at predetermined intervals along the Y-axis, and exposure target areas EA3 and EA4 are arranged at predetermined intervals along the Y-axis. Exposure target areas EA1 and EA2 are arranged on the -X side relative to exposure target areas EA3 and EA4.

[0028] On the surface of the full-size substrate P, a plurality of alignment marks ALMs (six in this embodiment) are arranged at predetermined intervals along the Y-axis direction. These alignment marks ALMs are arranged at four locations in the X-axis direction.

[0029] The alignment system ALG detects the alignment marks ALMs provided on the full-size substrate P. In this embodiment, six alignment systems ALG are provided corresponding to the six alignment marks ALMs that are separately arranged along the Y-axis on the full-size substrate P. That is, in this embodiment, six alignment systems ALG are arranged at predetermined intervals along the Y-axis.

[0030] In the case of transferring the pattern of the mask MSK onto the full-size substrate P placed on the substrate stage PST, the alignment measurement is performed in the exposure apparatus 10 before exposure, and the full-size substrate P is exposed to light patterned by the mask MSK using the results.

[0031] Figure 3(B) illustrates the process performed by the exposure apparatus 10 when transferring the pattern of the mask MSK onto the full-size substrate P placed on the substrate stage PST. In Figure 3(B), the order of each process is indicated by circled numbers. Furthermore, among the alignment marks ALMs arranged at four locations in the X-axis direction, the group of alignment marks ALMs closest to the -X side edge of the full-size substrate P is called suitable column R1, the group of alignment marks ALMs arranged on the +X side of column R1 is called suitable column R2, the group of alignment marks ALMs arranged on the +X side of column R2 is called suitable column R3, and the group of alignment marks ALMs arranged on the +X side of column R3 is called suitable column R4.

[0032] When transferring the pattern of the mask MSK to the full-size substrate P, the exposure apparatus 10 first performs position detection (alignment measurement) of the six alignment marks ALM contained in each column in the order of column R1, column R2, column R3, and column R4 by means of the alignment system ALG.

[0033] Next, the exposure apparatus 10 uses the alignment measurement results to expose the full-size substrate P with light patterned by the mask MSK. During the exposure process, the mask stage MST and substrate stage PST are synchronously driven along the X-axis direction according to the instructions of the control system CNT to perform scanning exposure of the first exposure target area EA4 on the full-size substrate P. When the scanning exposure of the first exposure target area EA4 is completed, the control system CNT moves the substrate stage PST to a position corresponding to the second exposure target area EA3 (stepping). Then, scanning exposure of the second exposure target area EA3 is performed. Similarly, when the scanning exposure of the exposure target area EA3 is completed, the control system CNT moves the substrate stage PST to a position corresponding to the third exposure target area EA1. Then, scanning exposure of the third exposure target area EA1 is performed. When the scanning exposure of the exposure target area EA1 is completed, the control system CNT moves the substrate stage PST to a position corresponding to the fourth exposure target area EA2. Then, scanning exposure of the fourth exposure target area EA2 is performed. When the scanning exposure for the fourth exposure target area EA2 is completed, the control system CNT moves the substrate stage PST to the position where the exposed full-size substrate P will be removed. In this way, the stepping between the exposure target areas of the full-size substrate P and the scanning exposure for the exposure target areas are repeated, thereby transferring the pattern of the mask MSK to all the exposure target areas on the substrate P.

[0034] In the exposure apparatus 10 of this embodiment, when transferring the pattern of the mask MSK onto the full-size substrate P, the execution order of the position detection processing of the alignment marks ALM contained in columns R1, R2, R3 and R4, and the order of the exposure processing for the exposure target areas EA1 to EA4 are determined in such a way that the distance moved by the substrate stage PST is minimized from the position where the full-size substrate P is placed on the substrate stage PST, through the position detection processing and the exposure processing, until the substrate stage PST stops at the position where the exposed full-size substrate P is removed.

[0035] Here, when half-size substrates HP1 and HP2 are placed on substrate stage PST, we consider the case where the pattern of mask MSK is transferred to each of the half-size substrates HP1 and HP2.

[0036] Figure 4(A) shows half-size substrates HP1 and HP2 mounted on a substrate stage PST. Exposure target areas EA11 and EA12 are respectively defined on half-size substrates HP1 and HP2. Exposure target areas EA11 and EA12 are arranged at predetermined intervals along the Y-axis. Furthermore, multiple alignment marks ALM are formed at both ends in the X-axis direction. The group of alignment marks ALM near the -X edge is called the suitable column R11, and the group of alignment marks ALM near the +X edge is called the suitable column R12.

[0037] When transferring the pattern of a mask MSK to a half-size substrate using an exposure apparatus that transfers the pattern of a mask MSK to a full-size substrate P, it is possible to effectively utilize the control program used when transferring the pattern of the mask MSK to the full-size substrate P. Here, as a comparative example, the case of effectively utilizing the control program used when transferring the pattern of the mask MSK to the full-size substrate P to transfer the pattern of the mask MSK to the half-size substrate HP will be described.

[0038] Figure 4(B) illustrates the process performed by the exposure apparatus of the comparative example when transferring the pattern of the mask MSK onto half-size substrates HP1 and HP2 mounted on the substrate stage PST. In Figure 4(B), the sequence of processes is also indicated by circled numbers.

[0039] As described above, alignment measurements are performed on a full-size substrate P, followed by scanning exposure of each exposure target area. Therefore, by effectively utilizing the control program used when transferring the pattern of the mask MSK to the full-size substrate P, it is possible to perform alignment measurements on one half-size substrate, and based on the results, perform scanning exposure of each exposure target area. Then, alignment measurements are performed on the other half-size substrate, and based on the results, scanning exposure of each exposure target area is performed. That is, alignment measurements and scanning exposure are continuously performed on each half-size substrate.

[0040] For example, the alignment system ALG of the comparative example exposure apparatus detects the positions of six alignment marks ALM contained in column R11, which is located on the side (+X side) of half-size substrate HP1, near the edge of half-size substrate HP1 near the -X side. Next, the alignment system ALG detects the positions of six alignment marks ALM contained in column R12, which is located on the side of half-size substrate HP1 near the +X side.

[0041] When the position detection of the alignment mark ALM contained in column R11 and the alignment mark ALM contained in column R12 is completed, the detection results are used to perform scanning exposure of the exposure target area EA12. When the scanning exposure of the exposure target area EA12 is completed, the control system CNT moves the substrate stage PST to the position corresponding to the second exposure target area EA11 (stepping). Then, scanning exposure of the second exposure target area EA11 is performed.

[0042] When the scanning exposure of all the exposure target areas of the half-size substrate HP1 is completed, the control system CNT moves the substrate stage PST to the position detected by the alignment mark ALM contained in column R11 of the half-size substrate HP2.

[0043] Next, the alignment system ALG of the comparative example exposure apparatus detects the positions of the six alignment marks ALM contained in column R11 near the -X side edge of the half-size substrate HP2. Next, the alignment system ALG detects the positions of the six alignment marks ALM contained in column R12 near the +X side edge of the half-size substrate HP2.

[0044] When the position detection of the alignment mark ALM contained in column R11 and the alignment mark ALM contained in column R12 is completed, the detection results are used to perform scanning exposure of the exposure target area EA11 of the half-size substrate HP2. When the scanning exposure of the exposure target area EA11 is completed, the control system CNT moves the substrate stage PST to the position corresponding to the second exposure target area EA12 (stepping). Then, scanning exposure is performed for the second exposure target area EA12.

[0045] When the scanning exposure of all the exposure target areas of half-size substrate HP2 is completed, the control system CNT moves the substrate stage PST to the removal position of half-size substrates HP1 and HP2. This completes the series of processes used to transfer the pattern of the mask MSK to half-size substrates HP1 and HP2.

[0046] Figures 5(A) to 8(B) show the movement of the substrate stage PST when the pattern of the mask MSK is transferred to half-size substrates HP1 and HP2 according to the processing sequence.

[0047] In Figure 5(A), the substrate stage PST is located at the position where half-size substrates HP1 and HP2 are to be moved onto the substrate stage PST (moving position). In Figure 5(A), half-size substrates HP1 and HP2 are moved in from the +X side.

[0048] When the loading of half-size substrates HP1 and HP2 is completed, the substrate stage PST moves in the -X direction, as shown in Figure 5(B), and stops at the position detected by the alignment mark ALM in column R11 of half-size substrate HP1. In Figures 5(A) to 8(B), it is assumed that multiple alignment systems ALG corresponding to multiple alignment marks ALM are set on the Y-axis.

[0049] When the position detection of the alignment mark ALM in column R11 of half-size substrate HP1 ends, the substrate stage PST moves further in the -X direction, as shown in Figure 5(C), and stops at the position where the position detection of the alignment mark ALM in column R12 of half-size substrate HP1 begins.

[0050] When the position detection of the alignment mark ALM of column R12 of half-size substrate HP1 is finished, as shown in Figure 5(D), the substrate stage PST moves to the position to start scanning exposure of the exposure target area EA12 of half-size substrate HP1.

[0051] By synchronously driving the substrate stage PST and the mask stage MST in the +X direction, the exposure target area EA12 is exposed using light patterned by the mask MSK. As shown in Figure 6(A), the substrate stage PST stops at the position where the scanning exposure of the exposure target area EA12 of the half-size substrate HP1 ends.

[0052] When the scanning exposure of the exposure target area EA12 is finished, the substrate stage PST moves in the -Y direction (steps), as shown in Figure 6(B), and moves to the position where the scanning exposure of the exposure target area EA11 of the half-size substrate HP1 begins.

[0053] By synchronously driving the substrate stage PST and the mask stage MST in the -X direction, the exposure target area EA11 is exposed using light patterned by the mask MSK. As shown in Figure 6(C), the substrate stage PST stops at the end position of the scanning exposure of the exposure target area EA11 of the half-size substrate HP1.

[0054] Next, the substrate stage PST moves in the +X and +Y directions, as shown in Figure 6(D), and stops at the position detected by the alignment mark ALM in column R11 of the starting half-size substrate HP2.

[0055] When the position detection of the alignment mark ALM in column R11 of half-size substrate HP2 ends, the substrate stage PST moves in the -X direction, as shown in Figure 7(A), and stops at the position where the position detection of the alignment mark ALM in column R12 of half-size substrate HP2 begins.

[0056] When the position detection of the alignment mark ALM in column R12 of half-size substrate HP2 is finished, the substrate stage PST moves in the -X and -Y directions, as shown in Figure 7(B), and stops at the position where the scanning exposure of the exposure target area EA11 of half-size substrate HP2 begins.

[0057] By synchronously driving the substrate stage PST and the mask stage MST in the +X direction, the exposure target area EA11 is exposed using light patterned by the mask MSK. As shown in Figure 7(C), the substrate stage PST stops at the end position of the scanning exposure of the exposure target area EA11 of the half-size substrate HP2.

[0058] When the scanning exposure of the exposure target area EA11 is finished, the substrate stage PST moves in the -X and +Y directions, as shown in Figure 7(D), and stops at the position where the scanning exposure of the exposure target area EA12 of the half-size substrate HP2 begins.

[0059] By synchronously driving the substrate stage PST and the mask stage MST in the +X direction, the exposure target area EA12 is exposed using light patterned by the mask MSK. As shown in Figure 8(A), the substrate stage PST stops at the position where the scanning exposure of the exposure target area EA12 of the half-size substrate HP2 ends.

[0060] When the scanning exposure of half-size substrates HP1 and HP2 is finished, as shown in Figure 8(B), the substrate stage PST moves to the position where the exposed half-size substrates HP1 and HP2 are removed, and the series of processes for transferring the pattern of the mask MSK to multiple half-size substrates HP1 and HP2 are completed.

[0061] Here, it is desirable to minimize the time required for a series of processes to transfer the pattern of the mask MSK to half-size substrates HP1 and HP2. However, if the processes are performed in the order described in the comparative example, the time required for the series of processes may not be the shortest possible.

[0062] Therefore, in the exposure apparatus 10 of this embodiment, the position detection process of the alignment mark ALM and the exposure process of the exposure target area are performed in the following order. FIG9 is a diagram illustrating the processes performed by the exposure apparatus 10 of this embodiment when transferring the pattern of the mask MSK to half-size substrates HP1 and HP2. In FIG9, the order of each process is indicated by circled numbers.

[0063] In this embodiment, the exposure apparatus 10 first uses the alignment system ALG to sequentially perform position detection of the six alignment marks ALM contained in column R11 of half-size substrate HP2, which is located on the +X side away from the half-size substrate HP1 and half-size substrate HP2, and position detection of the six alignment marks ALM contained in column R12.

[0064] Then, when the position detection processing of the alignment marks ALM formed on the half-size substrate HP2 is completed, the exposure apparatus 10 sequentially performs position detection of the six alignment marks ALM contained in column R11 and the six alignment marks ALM contained in column R12 of the half-size substrate HP1. That is, in this embodiment, the exposure apparatus 10 continuously performs position detection processing of the alignment marks ALM formed on the half-size substrate HP2 and the half-size substrate HP1 on the substrate stage PST. In addition, in this embodiment, the position detection processing is sequentially performed starting from the half-size substrate HP2, which is disposed on the substrate stage PST in the X-axis direction at a position away from the side (+X side) where the half-size substrate HP1 and the half-size substrate HP2 were brought in.

[0065] When the position detection process of the alignment marks ALM formed on half-size substrates HP1 and HP2 is completed, the control system CNT moves the substrate stage PST to the position to begin scanning exposure of the exposure target area EA12 on half-size substrate HP1. The control system CNT synchronously drives the mask stage MST and the substrate stage PST along the X-axis to perform scanning exposure of the first exposure target area EA12 on half-size substrate HP1.

[0066] When the scanning exposure for the first exposure target area EA12 is completed, the control system CNT moves the substrate stage PST to the position corresponding to the second exposure target area EA11 (stepping). Then, scanning exposure is performed for the second exposure target area EA11.

[0067] When the scanning exposure of all exposure target areas of half-size substrate HP1 is completed, the control system CNT moves the substrate stage PST to the position to begin scanning exposure of the exposure target area EA11 of half-size substrate HP2. The control system CNT synchronously drives the mask stage MST and the substrate stage PST along the X-axis to perform scanning exposure of the first exposure target area EA11 on half-size substrate HP2.

[0068] When the scanning exposure for the first exposure target area EA11 is completed, the control system CNT moves the substrate stage PST to the position corresponding to the second exposure target area EA12 (steps). Then, scanning exposure is performed for the second exposure target area EA12. Thus, in this embodiment, starting from half-size substrate HP1, which is located on the substrate stage PST in the X-axis direction near the side (+X side) where half-size substrate HP1 and half-size substrate HP2 are loaded, exposure processing is performed sequentially.

[0069] When the scanning exposure of all the exposure target areas of half-size substrate HP2 is completed, the control system CNT moves the substrate stage PST to the removal position of half-size substrates HP1 and HP2. This completes the series of processes used to transfer the pattern of the mask MSK to half-size substrates HP1 and HP2.

[0070] Thus, the position detection processing of the alignment marks ALM formed on half-size substrates HP2 and HP1 on the substrate stage PST is continuously performed, and based on the processing results of the position detection processing, the exposure processing of half-size substrates HP1 and HP2 on the substrate stage PST using prescribed patterned light is continuously performed, thereby shortening the time required for a series of operations. This aspect will be explained.

[0071] Figures 10(A) to 13(B) show the movement of the substrate stage PST when the pattern of the mask MSK is transferred to half-size substrates HP1 and HP2 according to the processing sequence of this embodiment.

[0072] In Figure 10(A), the substrate stage PST is located at the position where half-size substrates HP1 and HP2 are to be moved onto the substrate stage PST (moving position). In Figure 10(A), half-size substrates HP1 and HP2 are moved in from the +X side.

[0073] When the loading of half-size substrates HP1 and HP2 is completed, the substrate stage PST moves in the -X direction, as shown in Figure 10(B), and stops at the position detected by the alignment mark ALM in column R11 of half-size substrate HP2. In Figures 10(A) to 13(B), it is assumed that multiple alignment systems ALG corresponding to multiple alignment marks ALM are set on the Y-axis.

[0074] When the position detection of the alignment mark ALM in column R11 of half-size substrate HP2 ends, the substrate stage PST moves further in the -X direction, as shown in Figure 10(C), and stops at the position where the position detection of the alignment mark ALM in column R12 of half-size substrate HP2 begins.

[0075] When the position detection process of the alignment mark ALM in column R12 of half-size substrate HP2 is finished, the substrate stage PST moves in the -X direction, as shown in Figure 10(D), and stops at the position where the position detection of the alignment mark ALM in column R11 of half-size substrate HP1 begins.

[0076] When the position detection of the alignment mark ALM in column R11 of half-size substrate HP1 ends, the substrate stage PST moves in the -X direction, as shown in Figure 11(A), and stops at the position where the position detection of the alignment mark ALM in column R12 of half-size substrate HP1 begins.

[0077] When the position detection of the alignment mark ALM of column R12 of half-size substrate HP1 is finished, the substrate stage PST moves in the -X and +Y directions, as shown in Figure 11(B), and stops at the position where the scanning exposure of the exposure target area EA12 of half-size substrate HP1 begins.

[0078] By synchronously driving the substrate stage PST and the mask stage MST in the +X direction, the exposure target area EA12 is exposed using light patterned by the mask MSK. As shown in Figure 11(C), the substrate stage PST stops at the position where the scanning exposure of the exposure target area EA12 of the half-size substrate HP1 ends.

[0079] When the scanning exposure of the exposure target area EA12 is finished, the substrate stage PST moves in the -Y direction (steps), as shown in Figure 11(D), and stops at the position where the scanning exposure of the exposure target area EA11 of the half-size substrate HP1 begins.

[0080] By synchronously driving the substrate stage PST and the mask stage MST in the -X direction, the exposure target area EA11 is exposed using light patterned by the mask MSK. As shown in Figure 12(A), the substrate stage PST stops at the position where the scanning exposure of the exposure target area EA11 of the half-size substrate HP1 ends.

[0081] Next, the substrate stage PST moves in the +X direction, as shown in Figure 12(B), and stops at the position where the scanning exposure of the exposure target area EA11 of the half-size substrate HP2 begins.

[0082] By synchronously driving the substrate stage PST and the mask stage MST in the +X direction, the exposure target area EA11 is exposed using light patterned by the mask MSK. As shown in Figure 12(C), the substrate stage PST stops at the position where the scanning exposure of the exposure target area EA11 of the half-size substrate HP2 ends.

[0083] Next, the substrate stage PST moves in the -X and +Y directions, as shown in Figure 12(D), and stops at the position where scanning exposure of the exposure target area EA12 of the half-size substrate HP2 begins.

[0084] By synchronously driving the substrate stage PST and the mask stage MST in the +X direction, the exposure target area EA12 is exposed using light patterned by the mask MSK. As shown in Figure 13(A), the substrate stage PST stops at the position where the scanning exposure of the exposure target area EA12 of the half-size substrate HP2 ends.

[0085] When the scanning exposure of half-size substrates HP1 and HP2 is completed, as shown in Figure 13(B), the substrate stage PST moves to the position where the exposed half-size substrates HP1 and HP2 will be removed. This completes the series of processes for transferring the mask MSK pattern to half-size substrates HP1 and HP2.

[0086] Figure 14(A) is a diagram showing the movement path of the substrate stage PST when the pattern of the mask MSK is transferred to half-size substrates HP1 and HP2 according to the processing order of the comparative example.

[0087] In Figure 14(A), position P1 is the center of the substrate stage PST in Figure 5(A), position P2 is the center of the substrate stage PST in Figure 5(B), position P3 is the center of the substrate stage PST in Figure 5(C), and position P4 is the center of the substrate stage PST in Figure 5(D). Position P5 is the center of the substrate stage PST in Figure 6(A), position P6 is the center of the substrate stage PST in Figure 6(B), position P7 is the center of the substrate stage PST in Figure 6(C), and position P8 is the center of the substrate stage PST in Figure 6(D). Position P9 is the center of the substrate stage PST in Figure 7(A), position P10 is the center of the substrate stage PST in Figure 7(B), position P11 is the center of the substrate stage PST in Figure 7(C), and position P12 is the center of the substrate stage PST in Figure 7(D). Position P13 is the center position of the substrate stage PST in Figure 8(A), and position P14 is the center position of the substrate stage PST in Figure 8(B). As shown in Figure 14(A), the center of the substrate stage PST moves sequentially from position P1 to position P14.

[0088] Figure 14(B) is a diagram showing the movement path of the substrate stage PST when the pattern of the mask MSK is transferred to half-size substrates HP1 and HP2 according to the processing sequence of this embodiment.

[0089] In Figure 14(B), position P1 is the center of the substrate stage PST in Figure 10(A), position P2 is the center of the substrate stage PST in Figure 10(B), position P3 is the center of the substrate stage PST in Figure 10(C), and position P4 is the center of the substrate stage PST in Figure 10(D). Position P5 is the center of the substrate stage PST in Figure 11(A), position P6 is the center of the substrate stage PST in Figure 11(B), position P7 is the center of the substrate stage PST in Figure 11(C), and position P8 is the center of the substrate stage PST in Figure 11(D). Position P9 is the center of the substrate stage PST in Figure 12(A), position P10 is the center of the substrate stage PST in Figure 12(B), position P11 is the center of the substrate stage PST in Figure 12(C), and position P12 is the center of the substrate stage PST in Figure 12(D). Position P13 is the center position of the substrate stage PST in Figure 13(A), and position P14 is the center position of the substrate stage PST in Figure 13(B).

[0090] The center of the substrate stage PST moves sequentially from position P1 to position P14. After continuously performing the alignment mark ALM position detection processing for half-size substrates HP1 and HP2, the exposure processing of half-size substrates HP1 and HP2 is performed continuously. As shown in FIG14(B), compared with the comparative example, the movement path of the substrate stage PST becomes simpler, and the movement distance of the substrate stage PST is also shorter. Specifically, the movement distance from position P7 to position P10 in FIG14(A) becomes the movement distance from position P9 to position P10 in FIG14(B). Therefore, the overall movement distance of the substrate stage PST is shorter. This shortens the movement time of the substrate stage PST, and thus shortens the time required for a series of processes to transfer the pattern of the mask MSK to multiple half-size substrates HP1 and HP2.

[0091] As detailed above, according to this embodiment, the exposure apparatus 10 includes: an alignment system ALG that detects the position of alignment marks ALM formed on half-size substrates HP1 and HP2 arranged side-by-side along the X-axis on a substrate stage PST; and a control system CNT that drives the substrate stage PST along the X-axis to expose the half-size substrates HP1 and HP2 using light patterned by a mask MSK. The alignment system ALG continuously performs position detection of the alignment marks ALM on half-size substrate HP1 and the alignment marks ALM on half-size substrate HP2. Based on the position detection results of the alignment marks ALM on half-size substrate HP1 and the alignment marks ALM on half-size substrate HP2, the control system CNT exposes the half-size substrates HP1 and HP2 using light patterned by a mask MSK. In this way, as illustrated in Figure 14(B), the distance the substrate stage PST can be moved can be shortened, thus reducing the time required to transfer the pattern of the mask MSK to the multiple half-size substrates HP1 and HP2 placed on the substrate stage PST.

[0092] Furthermore, in this embodiment, the alignment system ALG sequentially performs alignment mark ALM position detection starting from half-size substrate HP2, which is positioned on the substrate stage PST in the X-axis direction away from the side (+X side) of the half-size substrates HP1 and HP2 that were brought in. This shortens the distance the substrate stage PST needs to move for the alignment mark ALM position detection of half-size substrates HP1 and HP2, compared to the case where alignment mark ALM position detection is sequentially performed starting from half-size substrate HP1, which is positioned closer to the side (+X side) of the half-size substrates HP1 and HP2 that were brought in. Therefore, the movement time of the substrate stage PST can be reduced.

[0093] Furthermore, in this embodiment, the control system CNT sequentially exposes half-size substrate HP1 (the side closest to where half-size substrates HP1 and HP2 are loaded) on the substrate stage PST in the X-axis direction, starting from half-size substrate HP1, using light patterned by a mask MSK. This shortens the movement distance of the substrate stage PST compared to alternately repeating alignment measurements and exposure processes, thus reducing the movement time of the substrate stage PST.

[0094] Furthermore, in the aforementioned embodiment, half-size substrates HP1 and HP2 on the substrate stage PST are moved in from the +X side and moved out from the +X side, but this is not a limitation. Half-size substrates HP1 and HP2 on the substrate stage PST can also be moved in from the -X side and moved out from the -X side. In this case, the execution order of each process can be determined by ensuring that the movement path of the substrate stage PST is such that the movement path shown in FIG. 14(B) is reversed around the Y-axis. Alternatively, half-size substrates HP1 and HP2 on the substrate stage PST can be moved in from the +X side and moved out from the -X side. In this case, the execution order of each process can be determined by minimizing the total distance of the substrate stage PST moving towards the position detecting half-size substrate HP1, the position detecting half-size substrate HP2, the position starting exposure processing of half-size substrate HP1, and the position starting exposure processing of half-size substrate HP2. That is, the execution order of each process can be determined by minimizing the moving distance of the substrate stage PST from substrate loading to substrate unloading.

[0095] In the described embodiment, the exposure apparatus is an apparatus used in the manufacture of a liquid crystal display (flat panel display), but the exposure apparatus may also be an apparatus for manufacturing semiconductors by exposing multiple silicon wafers.

[0096] In addition, in the embodiment described, the substrate is exposed using patterned light obtained by a mask MSK, but the substrate can also be exposed using patterned light obtained by a spatial light modulator such as a digital mirror device (DMD).

[0097] The described embodiments are suitable examples of the present invention. However, it is not limited thereto, and various modifications can be made without departing from the spirit of the present invention.

[0098] 10: Exposure device ALG: Alignment System ALM: Alignment Marker CNT: Control System MSK: Mask MST: Masking Platform P: Substrate HP, HP1, HP2: Half-size substrates PL: Projection Optical System PST: substrate stage

Claims

1. An exposure method, characterized in that it comprises: A first substrate and a second substrate different from the first substrate are arranged side by side on the substrate holding portion; The system continuously performs position detection processing on the position detection marks formed on the first substrate and the second substrate; and based on the processing result of the position detection processing, it continuously performs exposure processing on the first substrate and the second substrate on the substrate holding portion using a predetermined patterned light.

2. The exposure method as described in claim 1, wherein, The first substrate and the second substrate are arranged side by side on the substrate holding portion along a first direction. Starting from the substrate that is arranged on the substrate holding portion in the first direction at a position away from the side where the first substrate and the second substrate are moved in, the position detection process is performed sequentially.

3. The exposure method as described in claim 2, wherein, The exposure process is performed sequentially starting from the substrate of the first substrate and the second substrate, which is disposed on the substrate holding portion in the first direction at a position close to the side where the first substrate and the second substrate are moved in.

4. The exposure method as described in claim 1, comprising: The substrate holding section is moved to the position where the position detection process of the first substrate is performed; The substrate holding portion is moved to a position where the position detection process of the second substrate is performed; after the position detection process of the first substrate and the position detection process of the second substrate are completed, the substrate holding portion is moved to a position where the exposure process of one of the first substrate and the second substrate begins; And after completing the exposure process of one of the substrates, the substrate holding portion is moved to a position to start the exposure process of the other substrate of the first substrate and the second substrate, wherein the position detection process of the first substrate, the position detection process of the second substrate, the exposure process of the one substrate, and the exposure process of the other substrate are performed in the order that the total distance of the substrate holding portion moving to the position where the position detection process of the first substrate is performed, the distance of the substrate holding portion moving to the position where the position detection process of the second substrate is performed, the distance of the substrate holding portion moving to the position where the exposure process of the one substrate begins, and the distance of the substrate holding portion moving to the position where the exposure process of the other substrate begins is minimized.

5. An exposure method for exposing a first substrate and a second substrate arranged side-by-side on a substrate holding portion using a predetermined patterned light, characterized in that it includes: A portion of the exposure process is continuously performed on the first substrate and the second substrate.

6. The exposure method as described in claim 5, wherein, A part of the exposure process is: position detection processing of the position detection marks formed on the first substrate and the second substrate.

7. A substrate processing method, wherein a first processing and a second processing different from the first processing are performed on a plurality of substrates arranged side by side on a substrate holding portion, characterized in that, after the first processing is performed continuously on the plurality of substrates, the second processing is performed continuously on the plurality of substrates.

8. The substrate processing method as described in claim 7, wherein, The first process is: position detection processing of position detection marks formed on each of the plurality of substrates; the second process is: exposure processing of each of the plurality of substrates using prescribed patterned light.

9. An exposure apparatus, characterized in that it comprises: The position detection unit detects the position of a position detection mark formed on a first substrate and a second substrate arranged side by side along a first direction on a substrate holding unit. The system includes an exposure control unit that drives the substrate holding unit along the first direction and exposes the first substrate and the second substrate with a predetermined patterned light. The position detection unit continuously performs position detection of the position detection mark on the first substrate and the position detection mark on the second substrate. The exposure control unit exposes the first substrate and the second substrate with the predetermined patterned light based on the position detection results of the position detection marks on the first substrate and the second substrate.

10. The exposure apparatus as claimed in claim 9, wherein, The position detection unit sequentially performs position detection of the position detection mark, starting from the substrate of the first substrate and the second substrate that is disposed on the substrate holding portion in the first direction at a position away from the side where the first substrate and the second substrate are moved in.

11. The exposure apparatus as claimed in claim 10, wherein, The exposure control unit sequentially exposes the substrate to the predetermined patterned light, starting from the substrate of the first substrate and the second substrate, which is disposed on the substrate holding portion in the first direction near the side where the first substrate and the second substrate are moved in.

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