Gas mixtures for ion implantation and method

Abstract

This document provides an assembly for ion implantation. The assembly includes at least one container configured for fluid coupling to an arc chamber of an ion implantation device. The at least one container includes a gas component comprising BF3 and B2F4. When the gas component is supplied from the at least one container to the arc chamber for implantation into a substrate, a beam current of boron ions generated from the gas component is greater than a beam current of boron ions generated from a control gas component. This document also provides related systems and methods for ion implantation systems.

Description

[Technical Field]

[0001] This invention relates to gas mixtures for ion implantation, as well as related systems and methods. [Previous Technology]

[0002] Ion implantation involves implanting a chemical species into a substrate (such as a microelectronic device wafer) by bombarding it with high-energy ions. To generate the ion-implanted species, a gas is ionized to generate an ion beam. [Summary of the Invention]

[0003] Some embodiments relate to an assembly for ion implantation. In some embodiments, the assembly includes at least one container configured to be fluidly coupled to an arc chamber of an ion implantation device. In some embodiments, the at least one container includes a gas component. In some embodiments, the gas component includes BF3 and B2F4. In some embodiments, when the gas component is supplied from the at least one container to the arc chamber for implantation into a substrate, a beam current of boron ions generated from the gas component is greater than a beam current of boron ions generated from a control gas component.

[0004] Some embodiments relate to a system for ion implantation. In some embodiments, the system includes an assembly. In some embodiments, the assembly includes at least one container fluidly coupled to an arc chamber of an ion implantation device. In some embodiments, the at least one container includes a gas component. In some embodiments, the gas component includes BF3 and B2F4. In some embodiments, when the gas component is supplied from the at least one container to the arc chamber for implantation into a substrate, a beam current of boron ions generated from the gas component is greater than a beam current of boron ions generated from a control gas component.

[0005] Some embodiments relate to an ion implantation method. In some embodiments, the method includes flowing a gaseous component from at least one container into an arc chamber of an ion implantation device. In some embodiments, the gaseous component includes BF3 and B2F4. In some embodiments, the method includes generating boron ions from the gaseous component in the arc chamber of the ion implantation device. In some embodiments, the method includes flowing the boron ions in a beam from the arc chamber to a target chamber for implantation into a substrate.

Implementation Method

[0017] This application claims the right of U.S. Provisional Patent Application No. 63 / 564,295, filed March 12, 2024, pursuant to 35 USC 119, the entire contents of which are hereby incorporated herein by reference.

[0018] Some embodiments relate to gas mixtures for ion implantation. As disclosed herein, such gas mixtures for ion implantation exhibit improved performance when used for ion implantation. For example, when used for ion implantation, the gas mixtures disclosed herein unexpectedly extend source lifetime by significantly reducing W+ spikes. When used for ion implantation, the gas mixtures disclosed herein unexpectedly increase B+ beam current. When used for ion implantation, the gas mixtures disclosed herein unexpectedly increase BF2+ beam current. Upon review of the present invention, other benefits and improvements of the gas mixtures disclosed herein, together with the benefits and improvements of related systems, methods, devices, and assemblies, become apparent.

[0019] Some embodiments relate to an assembly. For example, in some embodiments, the assembly is a gas supply assembly. The assembly may include at least one container configured to contain a gaseous component. The at least one container may include a single container or a plurality of containers, such as (e.g., but not limited to) two to one hundred containers, or any number of containers between two and one hundred. The at least one container may be configured to store a gaseous component and supply the gaseous component to an ion implantation device, such as an arc chamber of an ion implantation device. In some embodiments, for example, the at least one container is configured to be fluidly coupled to an arc chamber of an ion implantation device.

[0020] In some embodiments, the gas component includes boron. In some embodiments, the gas component includes isotopically enriched boron.

[0021] As used herein, the term "isotope enrichment" means the presence of a molecule of an isotope at a level higher than a reference level. In some embodiments, the reference level is a natural abundance level. For example, in some embodiments, including an isotope-enriched boron molecule means the presence of a boron isotope molecule at a level higher than the natural abundance level. In some embodiments, the reference level is an initial amount of boron isotope, and the molecule is modified to increase the amount of boron isotope to above the initial amount. The percentage increase may be in the range of 1% to 100%, or any range or subrange between 1% and 100%, or in some examples greater than 100%. It should be understood that isotope enrichment of boron may include any isotope of boron, including (e.g., but not limited to) at least one of 6B, 7B, 8B, 9B, 10B, 11B, 12B, 13B, 14B, 15B, 16B, 17B, 18B, 19B, 20B, 21B, or any combination thereof.

[0022] In some embodiments, the at least one container includes BF3. In some embodiments, the BF3 includes isotopically enriched boron.

[0023] In one embodiment, the at least one container includes BF3 of 1% to 99% of the total volume of one of the gas components, or any range or subrange between 1% and 99%. In some embodiments, for example, the at least one container includes BF3 of 1% to 90% of the total volume of the gas components, 1% to 80% of the total volume, 1% to 70% of the total volume, 1% to 60% of the total volume, 1% to 50% of the total volume, 1% to 40% of the total volume, 1% to 30% of the total volume, 1% to 20% of the total volume, 1% to 10% of the total volume, 10% to 99% of the total volume, 20% to 99% of the total volume, 30% to 99% of the total volume, 40% to 99% of the total volume, 50% to 99% of the total volume, 60% to 99% of the total volume, 70% to 99% of the total volume, 80% to 99% of the total volume, or 90% to 99% of the total volume.

[0024] In some embodiments, the at least one container comprises B2F4. In some embodiments, the B2F4 comprises isotopically enriched boron.

[0025] In some embodiments, the at least one container comprises B2F4 in any range or subrange between 1% and 99% of the total volume of the gas component. In some embodiments, for example, the at least one container comprises B2F4 in any range or subrange between 1% and 99% of the total volume of the gas component.

[0026] In some embodiments, the at least one container includes B2F4 of 2% to 50% of the total volume of the gas component, or any range or subrange between 2% and 50%. For example, in some embodiments, the at least one container includes B2F4 of 2% to 45% of the total volume of the gas component, 2% to 40% of the total volume of the gas component, 2% to 35% of the total volume of the gas component, 2% to 30% of the total volume of the gas component, 2% to 25% of the total volume of the gas component, 2% to 20% of the total volume of the gas component, 2% to 15% of the total volume of the gas component, 2% to 10% of the total volume of the gas component, 2% to 5% of the total volume of the gas component, 5% to 50% of the total volume of the gas component, 10% to 50% of the total volume of the gas component, 15% to 50% of the total volume of the gas component, 20% to 50% of the total volume of the gas component, 25% to 50% of the total volume of the gas component, 30% to 50% of the total volume of the gas component, 35% to 50% of the total volume of the gas component, 40% to 50% of the total volume of the gas component, or 45% to 45% of the total volume of the gas component.

[0027] In some embodiments, the at least one container includes BF3 of 50% to 98% of the total volume of the gas component, or any range or subrange between 50% and 98%. In some embodiments, the at least one container includes BF3 of 50% to 98% of the total volume of the gas component, 50% to 95% of the total volume of the gas component, 50% to 90% of the total volume of the gas component, 50% to 85% of the total volume of the gas component, 50% to 75% of the total volume of the gas component, 50% to 70% of the total volume of the gas component, 50% to 65% of the total volume of the gas component, 50% to 60% of the total volume of the gas component, 50% to 55% of the total volume of the gas component, 55% to 98% of the total volume of the gas component, 60% to 98% of the total volume of the gas component, 65% to 98% of the total volume of the gas component, 70% to 98% of the total volume of the gas component, 75% to 98% of the total volume of the gas component, 80% to 98% of the total volume of the gas component, 85% to 98% of the total volume of the gas component, 90% to 98% of the total volume of the gas component, or 95% to 98% of the total volume of the gas component.

[0028] In some embodiments, the at least one container comprises B2F4 of 5 to 20% of the total volume of the gas component, or any range or subrange between 5 and 20%. In some embodiments, the at least one container comprises B2F4 of 5 to 18%, 5 to 16%, 5 to 15%, 5 to 14%, 5 to 12%, 5 to 10%, 5 to 8%, 5 to 6%, 6 to 20%, 8 to 20%, 10 to 20%, 12 to 20%, 14 to 20%, 15 to 20%, 16 to 20%, or 18 to 20%.

[0029] In some embodiments, the at least one container comprises BF3 of 80% to 95% of the total volume of the gas component, or any range or subrange between 80% and 95% of the total volume. In some embodiments, the at least one container comprises BF3 of 80% to 94% of the total volume of the gas component, 80% to 92% of the total volume of the gas component, 80% to 90% of the total volume of the gas component, 80% to 88% of the total volume of the gas component, 80% to 86% of the total volume of the gas component, 80% to 85% of the total volume of the gas component, 80% to 84% of the total volume of the gas component, 80% to 82% of the total volume of the gas component, 82% to 95% of the total volume of the gas component, 84% to 95% of the total volume of the gas component, 85% to 95% of the total volume of the gas component, 86% to 95% of the total volume of the gas component, 88% to 95% of the total volume of the gas component, 90% to 95% of the total volume of the gas component, 92% to 95% of the total volume of the gas component, or 94% to 95% of the total volume of the gas component.

[0030] In some embodiments, the at least one container further includes a second gas component. In some embodiments, the second gas component includes at least one of a boron-containing gas, hydrogen, a hydride gas, an inert gas, an ionizable gas, a diluent gas, a carrier gas, a co-gas, or any combination thereof. In some embodiments, the hydrogen includes H2. In some embodiments, the hydride gas includes a compound of the chemical formula AxHy, wherein A is an element other than hydrogen, x is 1 to 8, and y is 1 to 8. In some embodiments, the hydride gas includes at least one of, for example, PH3, AsH3, B2H6, SiH4, GeH4, NH3, or any combination thereof. In some embodiments, the inert gas includes at least one of, or any combination thereof, nitrogen, hydrogen, neon, argon, krypton, xenon. In some embodiments, the inert gas includes at least one of, or any combination thereof, N2, H2, Ne, Ar, Kr, Xe.

[0031] In some embodiments, the at least one container includes the gas component in a range or subrange of 1% to 99% of the total volume of the gas component and the second gas component, or any range between 1% and 99%. In some embodiments, for example, the at least one container includes the gas component in a range of 1% to 90% of the total volume of the gas component and the second gas component, 1% to 80% of the total volume of the gas component and the second gas component, 1% to 70% of the total volume, 1% to 60% of the total volume, 1% to 50% of the total volume, 1% to 40% of the total volume, 1% to 30% of the total volume, 1% to 20% of the total volume, 1% to 10% of the total volume, 10% to 99% of the total volume, 20% to 99% of the total volume, 30% to 99% of the total volume, 40% to 99% of the total volume, 50% to 99% of the total volume, 60% to 99% of the total volume, 70% to 99% of the total volume, 80% to 99% of the total volume, or 90% to 99% of the total volume.

[0032] In some embodiments, the at least one container includes a second gas component comprising 1 to 99% of the total volume of the gas component and the second gas component. In some embodiments, for example, the at least one container includes a second gas component comprising 1 to 90% of the total volume of the gas component and the second gas component, 1 to 80% of the total volume of the gas component and the second gas component, 1 to 70% of the total volume of the gas component and the second gas component, 1 to 60% of the total volume of the gas component and the second gas component, 1 to 50% of the total volume of the gas component and the second gas component, 1 to 40% of the total volume of the gas component and the second gas component, 1 to 30% of the total volume of the gas component and the second gas component, 1 to 20% of the total volume of the gas component and the second gas component, 1 to 10% of the total volume of the gas component, 10% of the total volume of the gas component and the second gas component, 20% of the total volume of the gas component and the second gas component, 30% of the total volume of the gas component and the second gas component, 40% of the total volume of the gas component and the second gas component, 50% of the total volume of the gas component and the second gas component, 60% of the total volume of the gas component and the second gas component, 70% of the total volume of the gas component and the second gas component, 80% of the total volume of the gas component and the second gas component, or 90% of the total volume of the gas component and the second gas component.

[0033] In some embodiments, the at least one container includes BF3, B2F4, at least one of the second gas components, or any combination thereof. In some embodiments, the at least one container includes a single container. In some embodiments, the single container includes BF3, B2F4, at least one of the second gas components, or any combination thereof. In some embodiments, the at least one container includes a first container and a second container. In some embodiments, the first container includes BF3, at least one of the second gas components, or any combination thereof. In some embodiments, the second container includes B2F4, at least one of the second gas components, or any combination thereof. In some embodiments, the at least one container does not include at least one of the second gas components. In some embodiments, the first container does not include at least one of the second gas components. In some embodiments, the second container does not include at least one of the second gas components.

[0034] As used herein, the term "boron ion" refers to a substance that includes at least one boron ion. For example, in some embodiments, the boron ion includes at least one of B+, BF2+, or any combination thereof.

[0035] In some embodiments, when the gas component is supplied from the at least one container to the arc chamber for implantation into a substrate, a beam current of boron ions generated from the gas component is greater than a beam current of boron ions generated from a control gas component. In some embodiments, when the gas component is supplied from the at least one container to the arc chamber for implantation into a substrate, a beam current of boron ions generated from the gas component is at least 1%, at least 5%, at least 10%, at least 15%, at least 20%, at least 25%, at least 30%, at least 35%, at least 40%, at least 45%, at least 50%, at least 55%, at least 60%, at least 65%, at least 70%, at least 75%, at least 80%, at least 85%, at least 90%, or at least 95% greater than a beam current of boron ions generated from a control gas component. In some embodiments, when the gas component is supplied from the at least one container to the arc chamber for implantation into a substrate, the beam current of boron ions generated from the gas component is 1% to 99%, 1% to 90%, 1% to 80%, 1% to 70%, 1% to 60%, 1% to 50%, 1% to 40%, 1% to 30%, 1% to 20%, 1% to 10%, 1% to 9%, 1% to 8%, or 1% greater than the beam current of boron ions generated from a control gas component. Up to 7%, 1% to 6%, 1% to 5%, 1% to 4%, 1% to 3%, 1% to 2%, 2% to 10%, 3% to 10%, 4% to 10%, 5% to 10%, 6% to 10%, 7% to 10%, 8% to 10%, 9% to 10%, 10% to 99%, 20% to 99%, 30% to 99%, 40% to 99%, 50% to 99%, 60% to 99%, 70% to 99%, 80% to 99%, or 90% to 99%.

[0036] FIG1 depicts a schematic diagram of an ion implantation system 100 according to one of some embodiments. As shown in FIG1, the ion implantation system 100 includes an arc chamber 150 in fluid communication with at least one container 102. In some embodiments, at least one container 102 is included in an assembly, such as (e.g., but not limited to) a gas supply assembly configured to store and / or supply a gaseous component to an arc chamber 150. As shown in FIG1, the ion implantation system 100 also includes an ion implantation chamber 101 (e.g., a target chamber).

[0037] The assembly includes the at least one container, which may include a single container or a plurality of containers. In some embodiments, the at least one container includes a gaseous component. For example, in some embodiments, the at least one container includes BF3. In some embodiments, the at least one container includes B2F4. In some embodiments, the at least one container includes at least one of the second gaseous components. For example, in some embodiments, the at least one container includes hydrogen. In some embodiments, the at least one container includes a hydride gas. In some embodiments, the at least one container includes an inert gas. In some embodiments, the at least one container includes an ionizable gas. In some embodiments, the at least one container includes a diluent gas. In some embodiments, the at least one container includes a carrier gas. In some embodiments, the at least one container includes a common gas.

[0038] In some embodiments, the at least one container includes a single container. In some embodiments, the single container includes a gaseous component. For example, in some embodiments, the single container includes BF3. In some embodiments, the single container includes B2F4. In some embodiments, the single container includes at least one of a second gaseous component. For example, in some embodiments, the single container includes hydrogen. In some embodiments, the single container includes a hydride gas. In some embodiments, the single container includes an inert gas. In some embodiments, the single container includes an ionizable gas. In some embodiments, the single container includes a diluent gas. In some embodiments, the single container includes a carrier gas. In some embodiments, the single container includes a common gas. In some embodiments, the single container does not include at least one of the hydrogen, the hydride gas, the inert gas, the ionizable gas, the diluent gas, the carrier gas, the common gas, or any combination thereof. For example, in some embodiments, at least one additional container is provided, wherein the at least one additional container includes at least one of the hydrogen, the hydride gas, the inert gas, the ionizable gas, the diluent gas, the carrier gas, the common gas, or any combination thereof.

[0039] In some embodiments, the at least one container includes a plurality of containers. In some embodiments, the plurality of containers includes at least a first container and a second container, wherein BF3 and B2F4 are in different containers.

[0040] In some embodiments, the first container includes BF3. In some embodiments, the first container includes at least one of the second gas components. For example, in some embodiments, the first container includes hydrogen. In some embodiments, the first container includes a hydride gas. In some embodiments, the first container includes an inert gas. In some embodiments, the first container includes an ionizable gas. In some embodiments, the first container includes a diluent gas. In some embodiments, the first container includes a carrier gas. In some embodiments, the first container includes a common gas. In some embodiments, the first container does not include at least one of the hydrogen, the hydride gas, the inert gas, the ionizable gas, the diluent gas, the carrier gas, the common gas, or any combination thereof.

[0041] In some embodiments, the second container includes B2F4. In some embodiments, the second container includes at least one of the second gas components. For example, in some embodiments, the second container includes hydrogen. In some embodiments, the second container includes a hydride gas. In some embodiments, the second container includes an inert gas. In some embodiments, the second container includes an ionizable gas. In some embodiments, the second container includes a diluent gas. In some embodiments, the second container includes a carrier gas. In some embodiments, the second container includes a common gas. In some embodiments, the second container does not include at least one of the hydrogen, the hydride gas, the inert gas, the ionizable gas, the diluent gas, the carrier gas, the common gas, or any combination thereof.

[0042] In some embodiments, the plurality of containers further includes at least one additional container. In some embodiments, the at least one additional container includes at least one of the second gas components. For example, in some embodiments, the at least one additional container includes at least one of the hydrogen, the hydride gas, the inert gas, the ionizable gas, the diluent gas, the carrier gas, the common gas, or any combination thereof. In some embodiments, the at least one additional container includes the second gas component(s) not present in the first container and / or the second container. In some embodiments, the at least one additional container includes at least one second gas component present in the first container and / or the second container.

[0043] When the assembly includes a plurality of containers, the assembly may include components for regulating the dispensing or dispensing of gases from the plurality of containers such that the gases are present in the arc chamber 150 at a desired concentration (e.g., volume percentage, partial pressure, etc.). Non-limiting examples of such components include (e.g., but not limited to) at least one of a regulator, a valve, a controller, a processor, a memory, a sensor, a flow controller, or any combination thereof. It should be understood that the assembly may include additional components without departing from the scope of the invention.

[0044] Although various exemplary embodiments have been disclosed above and elsewhere herein, it should be understood that any or more of the aforementioned gas components (i.e., gas components, second gas components, BF3, B2F4, hydrogen, hydride gases, inert gases, ionizable gases, diluent gases, carrier gases, common gases, or any combination thereof) may be combined or not combined in a single container or multiple containers without departing from the scope of the invention. It will be further understood that any or more of the assemblies disclosed herein may be used in system 100 without departing from the scope of the invention. For simplicity, various features, embodiments, and / or combinations will not be repeated herein.

[0045] In some embodiments, at least one container 102 is configured to deliver a gas below atmospheric pressure via one or more pressure regulators. In some embodiments, a gas is delivered below atmospheric pressure using an adsorbent.

[0046] In some embodiments, a device configured to generate hydrogen via an electrochemical cell is fluidly connected to the ion implantation system 100.

[0047] In some embodiments, the arc chamber 150 includes an arc chamber wall having a surface facing the internal plasma. One or more arc chamber liners may be present, all or a portion of the surface of the arc chamber 150 wall facing the internal plasma, configured to contact the internal plasma.

[0048] At least one container 102 may be of one type containing an adsorbent medium, wherein at least one of the gas components and / or a second gas component is substantially adsorbed onto the adsorbent medium to store the gas, and configured to desorb from the adsorbent medium under application conditions to be discharged from at least one container 102. The adsorbent medium may be a solid-phase carbon adsorbent material. In some embodiments, the adsorbent medium includes at least one of a porous organic polymer (POP), a zeolite, a zeolite imidazole ester framework (ZIF), a silicate, a metal-organic framework (MOF), or any combination thereof. Further non-limiting examples of adsorbent materials are described in U.S. Patent Publication No. 2023 / 0079446 entitled "Composite Adsorbent Containing Bodies and Related Methods," the entire contents of which are incorporated herein by reference. This type of adsorbent-based container is available from Entegris. Inc. (Danbury, Conn., USA). Alternatively, the container may be an internally pressure-regulated type containing one or more pressure regulators within its internal volume. Such pressure-regulated containers are available from Entegris, Inc. (Danbury, Conn., USA). As a further alternative, the container may contain, for example, a dopant source material that, by heating the container and / or its contents, volatilizes to produce a gas as an evaporation or sublimation product.

[0049] At least one container 102 may include a cylindrical container wall 104 enclosing an internal volume, the internal volume holding at least one of the gaseous components and / or the gaseous components of the second gaseous component in an adsorbed state, a free gas state, or a liquefied gas state, or any combination thereof.

[0050] At least one container 102 may include a valve head 108 coupled in gas flow communication via a line 117 for dispensing gas. A pressure sensor 110 may be housed in the line 117 together with a mass flow controller 114; other optional monitoring and sensing components may be coupled to the line and interface with control components (such as actuators, feedback and computer control systems, periodic timers, etc.).

[0051] The ion implantation chamber 101 may contain at least one of the gases for receiving the gas component and / or the second gas component dispensed from the line 117 and for generating an ion beam 105. The ion beam 105 may pass through a quality analyzer unit 122, which selects desired ions and rejects unselected ions.

[0052] Selected ions can pass through the accelerating electrode array 124 and then through the deflecting electrode 126. The resulting focused ion beam can strike a substrate 128 mounted on a rotatable support 130 mounted on a mandrel 132. The ion beam can be used to dope the substrate as needed to form a doped structure.

[0053] Each section of the ion implantation chamber 101 can be vented by pumps 120, 142 and 146 through lines 118, 140 and 144 respectively.

[0054] Figure 2 is a flowchart of one method 200 for ion implantation according to some embodiments. As shown in Figure 2, the method 200 for ion implantation may include one or more of the following steps: flowing a gas component from at least one container 202 into an arc chamber of an ion implantation device; generating boron ions 204 from at least the gas component in the arc chamber of the ion implantation device; and flowing the boron ions from the arc chamber 206 into a target chamber for implantation into a substrate. The method 200 for ion implantation may be implemented using any or more of the assemblies and ion implantation systems disclosed herein. For simplicity, the assemblies and / or ion implantation systems will not be repeated here.

[0055] At step 202, the method 200 for ion implantation includes causing a gaseous component to flow from the at least one container into an arc chamber of an ion implantation device.

[0056] In some embodiments, the flow includes flowing a gas component and / or a second gas component from a single container. In some embodiments, the flow includes flowing the gas component and / or the second gas component from a plurality of containers. In some embodiments, the gas component and / or the second gas component flows from different containers. In some embodiments, at least one of the gas components and at least one of the second gas components flows from the same container. In some embodiments, at least one of the gas components and at least one of the second gas components flows from different containers. In some embodiments, the gas component flows from the same container. In some embodiments, the gas component flows from different containers. In some embodiments, the second gas component flows from the same container. In some embodiments, the second gas component flows from different containers. In some embodiments, the flow includes dispensing a gas from the at least one container. In some embodiments, the flow includes supplying a gas from the at least one container. In some embodiments, the flow includes actuating a valve to allow gas to flow from the at least one container. In some embodiments, the flow includes pumping a gas from the at least one container. In some embodiments, the flow includes flowing BF3 from a first container into the arc chamber of the ion implantation device; and flowing B2F4 from a second container into the arc chamber of the ion implantation device. In some embodiments, the flow includes flowing at least one of hydrogen, a hydride gas, an inert gas, or any combination thereof into the arc chamber of the ion implantation device.

[0057] In some embodiments, the flow is carried out at a flow rate of 0.1 sccm to 10 sccm or any range or subrange between 0.1 sccm and 10 sccm. In some embodiments, the flow rate is 0.1 sccm to 9.5 sccm, 0.1 sccm to 9 sccm, 0.1 sccm to 8.5 sccm, 0.1 sccm to 8 sccm, 0.1 sccm to 7.5 sccm, 0.1 sccm to 7 sccm, 0.1 sccm to 6.5 sccm, 0.1 sccm to 6 sccm, 0.1 sccm to 5.5 sccm, 0.1 sccm to 5 sccm, 0.1 sccm to 4.5 sccm, 0.1 sccm to 4 sccm, 0.1 sccm to 3.5 sccm, 0.1 sccm to 3 sccm, 0.1 sccm to 2.5 sccm, 0.1 sccm to 2 sccm, 0.1 sccm to 1.5 sccm, 0.1 sccm to 1 sccm, 0.1 The flow rate can be one of the following: sccm to 0.5 sccm, 0.5 sccm to 10 sccm, 1 sccm to 10 sccm, 1.5 sccm to 10 sccm, 2 sccm to 10 sccm, 2.5 sccm to 10 sccm, 3 sccm to 10 sccm, 3.5 sccm to 10 sccm, 4 sccm to 10 sccm, 4.5 sccm to 10 sccm, 5 sccm to 10 sccm, 5.5 sccm to 10 sccm, 6 sccm to 10 sccm, 6.5 sccm to 10 sccm, 7 sccm to 10 sccm, 7.5 sccm to 10 sccm, 8 sccm to 10 sccm, 8.5 sccm to 10 sccm, 9 sccm to 10 sccm, or 9.5 sccm to 10 sccm.

[0058] At step 204, the method 200 for ion implantation includes generating ions from at least the gas component in the arc chamber (e.g., an ion source) of the ion implantation device.

[0059] In some embodiments, the generation includes generating ions from at least the gas component in the arc chamber of the ion implantation device. In some embodiments, the generation includes ionizing at least one of the gas component, the second gas component, or any combination thereof. In some embodiments, the generation includes exposing the gas component, at least one of the second gas component, or any combination thereof to electromagnetic radiation. In some embodiments, the electromagnetic radiation includes at least one of radio frequency radiation, microwave radiation, or any combination thereof. In some embodiments, the generation includes colliding the gas component, the second gas component, or any combination thereof with particles. In some embodiments, the generation includes bombarding the gas component, at least one of the second gas component, or any combination thereof with particles.

[0060] At step 206, the method 200 for ion implantation includes causing the plasma to flow from the arc chamber to a target chamber for implantation into a substrate.

[0061] In some embodiments, the flow includes flowing the plasma in a beam from the arc chamber to a target chamber for implantation into a substrate. In some embodiments, the flow includes accelerating the plasma to an energy sufficient for implantation into a substrate. In some embodiments, the flow includes extracting boron ions or boron-containing ions from the ion generator to bombard a substrate. In some embodiments, the flow includes selecting boron ions and / or boron-containing ions from the ion generator for implantation into a substrate. In some embodiments, the flow includes flowing the plasma through an electric field. In some embodiments, the flow includes flowing the plasma through a mass analyzer. In some embodiments, the flow includes ejecting the plasma into a target chamber for implantation into a substrate.

[0062] It should be understood that any or more of the embodiments disclosed herein may be used alone or in combination without departing from the scope of the invention.

[0063] Example 1 The B+ beam current of a BF3 / B2F4 gas mixture (sample A) was measured under varying gas flow rates and compared with a control (control A). Control A contained BF3 gas but no B2F4. Sample A contained a gas mixture of 15% by volume of B2F4, wherein the remainder of the gas mixture consisted of BF3. Unless otherwise specified herein, volume percentages are based on the total volume of the gas mixture. The measurement conditions for Sample A and Control A were the same and are referred to herein as Condition 1. Figure 3 is a graphical view of the B+ beam current of Control A and Sample A under varying total gas flow rates (sccm). Figure 4 is a graphical view of the beam spectra of Control A and Sample A. As shown in Figure 3, when the total gas flow rate increased from 3.1 sccm to 3.3 sccm, the B+ beam current of Sample A was significantly greater than that of Control A. In addition, the mixture of BF3 and B2F4 in sample A showed a significantly reduced W+ peak (inset, dashed line), as shown in Figure 4.

[0064] Example 2: The B+ beam current of a BF3 / B2F4 gas mixture (sample B) was measured under varying gas flow rates and compared with a control (control B). Control B contained BF3 gas but no B2F4. Sample B contained a gas mixture of 15% by volume of B2F4, the remainder of which consisted of BF3. The measurement conditions for Sample B and Control B were the same and are referred to herein as condition 2. Figure 5 is a graphical view of the B+ beam current of Control B and Sample B under varying total gas flow rates (sccm). As shown in Figure 5, the B+ beam current of Sample B is significantly greater than that of Control B because the total gas flow rate increases to over 3.5 sccm.

[0065] Example 3: The BF2+ beam current of sample C was measured under varying gas flow rates and compared with that of control C. The measurement conditions were the same as in Example 1. Figure 6 is a graphical view of the BF2+ beam current of control C and sample C under varying total gas flow rates (sccm). Figure 7 is a graphical view of the beam spectra of control C and sample C. As shown in Figure 6, for all total gas flow rates, the BF2+ beam current of sample C is significantly greater than that of control C. In addition, the mixture of BF3 and B2F4 in sample C shows a significantly reduced W+ peak (inset, dashed line), as shown in Figure 7.

[0066] Example 4: The BF2+ beam current of sample D was measured under varying gas flow rates and compared with that of control D. The measurement conditions were the same as in Example 2. Figure 8 is a graphical view of the BF2+ beam current of control D and sample D under varying total gas flow rates (sccm). Figure 9 is a graphical view of the beam spectra of control D and sample D. As shown in Figure 8, for all total gas flow rates, the BF2+ beam current of sample D is significantly greater than that of control D. In addition, the mixture of BF3 and B2F4 in sample D shows a significant reduction in W+ spikes (inset, dashed line), as shown in Figure 9.

[0067] Example 5 Figure 10 is a graphical view of the B+ beam current of a gas mixture with varying B2F4 concentration according to some embodiments. At 0 vol% of B2F4, the gas mixture comprises 100% BF3. As shown in Figure 10, across all tested concentration ranges (containing 0 vol% to 50 vol% of B2F4), the B+ beam current unexpectedly increases as B2F4 is added to the gas mixture.

[0068] State

[0069] Various states are described below. It should be understood that any or more of the features described in the following states(s) may be combined with any or more other states(s). State(s) 1. An assembly comprising: at least one container configured to be fluidly coupled to an arc chamber of an ion implantation device, wherein the at least one container includes a gas component, wherein the gas component includes BF3 and B2F4; wherein, when the gas component is supplied from the at least one container to the arc chamber for implantation into a substrate, a beam current of boron ions generated from the gas component is greater than a beam current of boron ions generated from a control gas component. State(s) 2. The assembly of State(s) 1, wherein the at least one container includes: a first container including the BF3; and a second container including the B2F4. State(s) 3. An assembly of any or more of State(s) 1 to 2, wherein the at least one container is a single container including the BF3 and the B2F4. Sample 4. An assembly according to Sample 3, wherein the single container comprises: 1 to 80 vol% of the B2F4 based on the total volume of one of the gas components. Sample 5. An assembly according to Sample 3, wherein the single container comprises: 2 to 50 vol% of the B2F4 based on the total volume of one of the gas components. Sample 6. An assembly according to Sample 3, wherein the single container comprises: 5 to 20 vol% of the B2F4 based on the total volume of one of the gas components. Sample 7. An assembly according to any one or more of Samples 1 to 6, wherein the at least one container further comprises at least one of hydrogen, a hydride gas, an inert gas, or any combination thereof. Sample 8. An assembly according to Sample 7, wherein the hydride gas comprises a compound of one of the following chemical formulas: AxHy, wherein: A is an element other than hydrogen; x is 1 to 8; and y is 1 to 8. Sample 9. The assembly according to Sample 7, wherein the hydride gas comprises at least one of PH3, AsH3, B2H6, SiH4, GeH4, NH3, or any combination thereof. Sample 10. The assembly according to Sample 7, wherein the inert gas comprises at least one of nitrogen, hydrogen, neon, argon, krypton, xenon, or any combination thereof. Sample 11. The assembly according to any one or more of Samples 1 to 10, wherein at least one of BF3, B2F4, or any combination thereof comprises isotopically enriched boron. 12. A system for ion implantation, comprising: an assembly having fluidly including at least one container fluidly coupled to an arc chamber of an ion implantation device; wherein the at least one container includes a gas component; wherein the gas component includes BF3 and B2F4; wherein, when the gas component is supplied from the at least one container to the arc chamber for implantation into a substrate, a beam current of boron ions generated from the gas component is greater than a beam current of boron ions generated from a control gas component.Sample 13. The system according to Sample 12, wherein the at least one container comprises: a first container comprising the BF3; and a second container comprising the B2F4. Sample 14. The system according to any one or more of Samples 12 to 13, wherein the at least one container is a single container comprising the BF3 and the B2F4. Sample 15. The system according to any one or more of Samples 12 to 14, wherein the at least one container further comprises at least one of hydrogen, a hydride gas, an inert gas, or any combination thereof. Sample 16. The system according to any one or more of Samples 12 to 15, wherein at least one of the BF3, the B2F4, or any combination thereof comprises isotopically enriched boron. Version 17. A method comprising: flowing at least one gas component from at least one container into an arc chamber of an ion implantation device, wherein the gas component includes BF3 and B2F4; generating ions from at least the gas component in the arc chamber of the ion implantation device; and flowing the plasma in a beam from the arc chamber to a target chamber for implantation into a substrate. Version 18. The method of Version 17, wherein flowing the gas component includes flowing the gas component from a single container including the gas component. Version 19. The method of any one or more of Versions 17 to 18, wherein flowing the gas component includes: flowing the BF3 from a first container into an arc chamber of the ion implantation device; and flowing the B2F4 from a second container into the arc chamber of the ion implantation device. Version 20. The method according to Version 19 further includes: flowing at least one of hydrogen, a hydride gas, an inert gas, or any combination thereof into the arc chamber of the ion implantation device. It should be understood that detailed modifications may be made without departing from the scope of the invention, particularly in terms of the shape, size, and arrangement of the construction materials and components used. This specification and the described embodiments are examples, wherein the true scope and spirit of the invention are indicated by the following claims. [Simplified Explanation of the Diagram]

[0006] Referring to the accompanying drawings, some embodiments of the invention are described herein by way of example only. Detailed reference is now made to the drawings, and it should be emphasized that the embodiments shown are examples and for the purpose of illustrative discussion of embodiments of the invention. Accordingly, the description in conjunction with the drawings will enable those skilled in the art to understand how embodiments of the invention can be practiced.

[0007] Figure 1 depicts a schematic diagram of one of the ion implantation systems according to one of some embodiments.

[0008] Figure 2 is a flowchart of one method for ion implantation according to some embodiments.

[0009] Figure 3 is a graphical view of the B+ beam current of the variation of total gas flow rate (sccm) according to some embodiments of control A and sample A.

[0010] Figure 4 is a graphical view of the beam spectrum of one of the control A and sample A according to some embodiments.

[0011] Figure 5 is a graphical view of the B+ beam current of the variation of total gas flow rate (sccm) according to some embodiments of control B and sample B.

[0012] Figure 6 is a graphical view of the BF2+ beam current of the total gas flow rate (sccm) of control C and sample C according to some embodiments.

[0013] Figure 7 is a graphical view of the beam spectrum of a control C and a sample C according to some embodiments.

[0014] Figure 8 is a graphical view of the BF2+ beam current of the total gas flow rate (sccm) of control D and sample D according to some embodiments.

[0015] Figure 9 is a graphical view of the beam spectrum of one of the control D and sample D according to some embodiments.

[0016] Figure 10 is a graphical view of the B+ beam current of a gas mixture with varying B2F4 concentration according to some embodiments.

Claims

1. An assembly for delivering boron ions to an arc chamber, comprising: At least one container configured to be fluidly coupled to an arc chamber of an ion implantation device, wherein the at least one container includes a gas component, wherein the gas component includes BF3 and B2F4; wherein, when the gas component is supplied from the at least one container to the arc chamber for implantation into a substrate, a beam current of boron ions generated from the gas component is greater than a beam current of boron ions generated from a control gas component, wherein the at least one container is a single container comprising the BF3 and B2F4, and wherein the single container comprises 5% to 20% by volume of the B2F4 based on the total volume of the gas component.

2. The assembly of claim 1, wherein the at least one container comprises: A first container, which includes the BF3; and a second container that includes the B2F4.

3. The assembly of claim 1, wherein the at least one container further comprises at least one of hydrogen, a hydride gas, an inert gas, or any combination thereof.

4. The assembly of claim 3, wherein the at least one container comprises a hydride gas of the following chemical formula: AxHy, wherein: One of the A series elements except hydrogen; X series elements 1 to 8; and Y series elements 1 to 8.

5. The assembly of claim 4, wherein the hydride gas comprises at least one of PH3, AsH3, B2H6, SiH4, GeH4, NH3, or any combination thereof.

6. The assembly of claim 4, wherein the inert gas includes at least one of nitrogen, hydrogen, neon, argon, krypton, xenon, or any combination thereof.

7. A system for ion implantation, comprising: An assembly having a fluid comprising at least one container fluidly coupled to an arc chamber of an ion implantation device; The at least one container includes a gas component; the gas component includes BF3 and B2F4; wherein, when the gas component is supplied from the at least one container to the arc chamber for implantation into a substrate, a beam current of boron ions generated from the gas component is greater than a beam current of boron ions generated from a control gas component, wherein the at least one container includes a single container of BF3 and B2F4, and wherein the single container includes B2F4 at a volume percentage of 5% to 20% of the total volume of the gas component.

8. The system of claim 7, wherein the at least one container comprises: A first container, which includes the BF3; and a second container that includes the B2F4.

9. The system of claim 7, wherein the at least one container further comprises at least one of hydrogen, a hydride gas, an inert gas, or any combination thereof.

10. A method for delivering boron ions into an arc chamber, comprising: The method involves causing at least one gaseous component to flow from at least one container into the arc chamber of an ion implantation device, wherein the gaseous component includes BF3 and B2F4; generating ions from at least the gaseous component in the arc chamber of the ion implantation device; and causing the plasma in a beam to flow from the arc chamber to a target chamber for implantation into a substrate, wherein the at least one container is a single container comprising one of the BF3 and B2F4, and wherein the single container comprises B2F4 at a volume percentage of 5% to 20% of the total volume of one of the gaseous components.

11. The method of claim 10, wherein causing the gas component to flow includes causing the gas component to flow from the single container containing the gas component.

12. The method of claim 10, wherein causing the gas component to flow comprises: The BF3 is allowed to flow from a first container into one of the arc chambers of the ion implantation device; And to allow the B2F4 to flow from a second container into the arc chamber of the ion implantation device.

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