Deposition mask for OLED pixel deposition

Abstract

A deposition mask includes: a metal plate including a deposition region and a non-deposition region, wherein the metal plate is defined having a first direction in the longitudinal direction and a second direction in the width direction, wherein the deposition region includes a plurality of effective regions; and a non-effective region, wherein the non-effective region includes a first non-effective region between the effective regions, wherein the plurality of through holes are disposed in the effective region, wherein at least one pattern is disposed in the first non-effective region, wherein the pattern and the through holes form different shapes.

Description

[Technical Field]

[0001] This invention relates to a deposition mask for OLED pixel deposition. [Previous Technology]

[0002] Display devices are used in a variety of devices. For example, display devices are used in small devices such as smartphones or tablets. Alternatively, display devices are used in large-screen devices such as televisions, monitors, or public display screens. Recently, there has been an increasing demand for Ultra High Definition (UHD) displays with 500 pixels per inch (PPI) or higher. Therefore, display devices with high resolution are being used in both small and large devices.

[0003] Display devices are classified into liquid crystal displays (LCDs) and organic light-emitting diodes (OLEDs) according to their driving method.

[0004] LCD is a display device that uses liquid crystal driving. OLED is a display device that uses organic materials driving the display.

[0005] OLEDs can achieve infinite contrast, have a response speed 1000 times faster than LCDs, and offer excellent viewing angles. Therefore, organic light-emitting diodes have attracted much attention as a display device that can replace LCDs.

[0006] An OLED includes a light-emitting layer. The light-emitting layer includes an organic material. The organic material is deposited on a substrate using a deposition mask. The deposition mask may include an open mask (OM) or a fine metal mask (FMM). A deposition pattern corresponding to the pattern formed on the deposition mask is formed on the substrate. Therefore, the deposition pattern can be used as a pixel.

[0007] An open-face mask is a thin sheet that forms a deposition pattern only in specific locations during OLED manufacturing. Open-face masks are used in the deposition process of forming a light-emitting layer on top of the backplane after the backplane is completed in the display manufacturing process. In other words, an open-face mask is a mask that does not cover the interior of the display's working area, allowing deposition across the entire surface of the display. Therefore, an open-face mask is used when depositing a light-emitting layer using a single-color light-emitting material.

[0008] On the other hand, fine metal masks can be used to change the color of sub-pixels in the light-emitting layer. Therefore, fine metal masks include ultra-fine apertures. The process of using fine metal masks requires a multi-step deposition process. Therefore, this process requires precise alignment. Therefore, the process of using fine metal masks is more difficult than the process of using open masks.

[0009] When depositing the light-emitting layer of an OLED using an open-mask method, only a monochromatic light-emitting layer can be formed. Therefore, a separate color filter is required to achieve various colors. On the other hand, when using a fine metal mask, an RGB light-emitting layer can be formed. Therefore, a separate color filter is not required. In other words, the technology of using a fine metal mask is more difficult. However, compared with the method using an open-mask method, the effect is better because no filter is needed to block light.

[0010] The fine metal mask is typically made of an invar alloy metal plate, including iron (Fe) and nickel (Ni). Through-holes are formed through one surface and another surface of the metal plate. The through-holes are formed at positions corresponding to the pixel pattern. Therefore, red, green, and blue organic materials can pass through the through-holes of the metal plate and be deposited on the deposition substrate. Thus, a pixel pattern can be formed on the deposition substrate.

[0011] Meanwhile, the fine metal mask includes small holes formed on one surface of the metal plate and large holes formed on the other surface of the metal plate. The small holes and large holes are connected by a connecting part. This forms a through hole.

[0012] Organic material is sprayed along the direction of the fine metal mask. The organic material is deposited on the deposition substrate with large surface holes as the inlet and small surface holes as the outlet.

[0013] Specifically, a plurality of strip-shaped fine metal masks are disposed on the deposition substrate. Organic material passes through the large surface holes of the plurality of fine metal masks along the direction of the small surface holes.

[0014] A fine metal mask is stretched along the longitudinal direction of the mask and connected to the frame. Therefore, a plurality of fine metal masks are fixed by the frame.

[0015] Therefore, the fine metal mask generates stress under tensile force. Consequently, under stress, ripples may form on the surface of the fine metal mask.

[0016] The distance between the surface pinholes and macroholes can change due to ripples. Therefore, the position of the organic material deposited by the fine metal mask will change. Consequently, the deposition reliability of the fine metal mask may decrease.

[0017] Therefore, a deposition mask with a new structure that can solve the above problems is needed. [Summary of the Invention]

[0018] This embodiment provides a deposition mask with higher deposition reliability.

[0019] A deposition mask includes: a metal plate including a deposition region and a non-deposition region, wherein the metal plate is defined having a first direction, which is longitudinal and a second direction, which is a width direction, wherein the deposition region includes a plurality of effective regions; and non-effective regions, wherein the non-effective regions include a first non-effective region between the effective regions, wherein a plurality of through holes are disposed in the effective regions, and at least one pattern is disposed in the first non-effective region, wherein the pattern and the through holes form different shapes.

[0020] The reliability of the deposition mask according to this embodiment can be improved by setting a pattern between the effective areas.

[0021] The deposition mask is fixed by a mask frame. At this time, the deposition mask is stretched longitudinally. Therefore, after the deposition mask is fixed to the mask frame, tensile stress may remain inside the deposition mask. Due to the residual stress, the waviness of the deposition mask surface may increase. Therefore, the spacing between the effective areas of the deposition mask may change. In addition, the spacing between the vias set in the effective areas may change.

[0022] The deposition mask may include a pattern disposed on the deposition area. Specifically, the pattern may be disposed between adjacent effective areas.

[0023] The residual stress of the deposition mask can be dispersed by patterning. Therefore, the waviness of the deposition mask can be reduced.

[0024] Therefore, the variation in spacing between effective regions and between vias within effective regions is minimal. Consequently, the deposition mask exhibits better deposition reliability.

[0025] Furthermore, the patterns and vias are formed through different processes. Therefore, the shape and size of the patterns can be formed in various ways. Thus, the shape and size of the patterns can be formed in various ways depending on the magnitude of the tension applied to the deposition mask. Therefore, patterns with various shapes and sizes can be formed depending on the size of the deposition mask and the operating environment. Therefore, the deposition mask can improve deposition reliability.

[0026] Furthermore, the difference in pattern width can be very small in the thickness direction of the metal plate. Therefore, the difference in the amount of metal removed from the first and second surfaces of the deposition mask can be reduced. Thus, the deposition mask can be prevented from bending in one direction due to the difference between the residual metal on the first and second surfaces.

Implementation Method

[0028] Embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings. However, the spirit and scope of the present disclosure are not limited to the described embodiments, and may be implemented in various other forms. Furthermore, one or more elements of the embodiments may be selectively combined and substituted within the spirit and scope of the present disclosure. In addition, unless otherwise expressly defined and described, the terms used in the embodiments of the present disclosure (including technical and scientific terms) are to be interpreted as having the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains, and terms such as those defined in common dictionaries are to be interpreted as having a meaning consistent with their meaning in the relevant technical context.

[0029] Furthermore, the terminology used in the embodiments of this disclosure is for describing embodiments of this disclosure and is not intended to limit this disclosure. In this specification, unless specifically stated in the phrase, the singular form may also include the plural form, and when described as "at least one (or plural) of A (and), B and C", it may include at least one of all possible combinations of A, B and C.

[0030] Furthermore, when describing the elements of embodiments of this disclosure, terms such as first, second, A, B, (a), and (b) may be used. These terms are used only to distinguish components from other components, and are not limited to the nature, order, or sequence of components.

[0031] Furthermore, when describing a component as being "connected", "coupled" or "connected" to another component, it includes not only that the element is directly "connected", "coupled" or "connected" to other components, but also that the component is "connected", "coupled" or "connected" to other components by another element.

[0032] Furthermore, when described as being formed or arranged "above" or "below" each component, "above" or "below" can include not only when two components are directly connected to each other, but also when one or more other components are formed or arranged between the two components.

[0033] In addition, when expressed as "up" or "down", it can include not only the upward direction, but also the downward direction based on a component.

[0034] A deposition mask according to an embodiment will now be described with reference to the accompanying drawings.

[0035] The deposition mask described below is a fine metallic mask capable of forming RGB pixel patterns on a deposition substrate by depositing red, green, and blue organic materials on the substrate. Furthermore, the following description does not apply to open-type masks.

[0036] In the following description, the first direction 1D is the longitudinal direction of the deposition mask. In addition, the second direction 2D is the width direction of the deposition mask.

[0037] Figures 1 to 3 are views for explaining the process of depositing organic material on a deposition substrate 300 using a deposition mask 100 according to an embodiment.

[0038] Referring to Figures 1 and 2, the organic material deposition apparatus includes a deposition mask 100, a mask frame 200, a deposition substrate 300, an organic material deposition container 400, and a vacuum chamber 500.

[0039] The deposition mask 100 includes a metal. For example, the deposition mask includes iron (Fe) and nickel (Ni). Specifically, the deposition mask includes a nickel-iron alloy comprising iron (Fe) and nickel (Ni).

[0040] The deposition mask 100 includes a plurality of vias TH. The vias are disposed in the effective region. The vias correspond to the pixel pattern to be formed on the deposition substrate. The deposition mask 100 includes non-effective regions outside the effective region, the effective region including the deposition region.

[0041] That is, the deposition mask 100 may include a metal plate 10, on which a plurality of through holes TH may be formed.

[0042] The mask frame 200 includes an opening 205. A plurality of through holes are arranged in the area corresponding to the opening 205. Therefore, organic material supplied to the organic material deposition container 400 is deposited on the deposition substrate 300. The deposition mask 100 is placed and fixed to the mask frame 200. For example, the deposition mask 100 is tightened with a set tension. In addition, the deposition mask 100 is welded and fixed to the mask frame 200.

[0043] For example, non-functional areas of the deposition mask 100 are welded. Therefore, the deposition mask 100 is fixed to the mask frame 200. Then, the portions protruding from the mask frame 200 are cut and removed.

[0044] The shielding frame 200 comprises a metal with high rigidity. Therefore, deformation of the shielding frame during welding can be reduced.

[0045] The deposition substrate 300 is a substrate used in the manufacture of a display device. For example, an OLED pixel pattern is formed on the deposition substrate 300. Red, green, and blue organic patterns are formed on the deposition substrate 300 to form pixels of the three primary colors of light. That is, an RGB pattern is formed on the deposition substrate 300.

[0046] The organic material deposition container 400 is a crucible. Organic material is placed inside the crucible. The organic material deposition container 400 moves within a vacuum chamber 500. That is, the organic material deposition container 400 moves in one direction within the vacuum chamber 500. For example, the organic material deposition container 400 moves within the vacuum chamber 500 along the width direction of the deposition shield 100.

[0047] A heat source and / or current is provided to the organic material deposition container 400, causing organic material to be deposited on the deposition substrate 300.

[0048] Referring to FIG3, the deposition mask 100 includes a metal plate 10. The metal plate includes a first surface 1S and a second surface 2S. The first surface 1S and the second surface 2S are opposite to each other.

[0049] The first surface 1S includes a small surface hole V1. The second surface 2S includes a large surface hole V2. For example, a plurality of small surface holes V1 and a plurality of large surface holes V2 are formed on the first surface 1S and the second surface 2S, respectively.

[0050] In addition, the deposition mask 100 also includes a via TH. The via TH is formed by a connection CA that connects the boundary between the small surface hole V1 and the large surface hole V2.

[0051] The width of the large surface aperture V2 is greater than the width of the small surface aperture V1. The width of the small surface aperture V1 is measured on the first surface 1S of the deposition mask 100. The width of the large surface aperture V2 is measured on the second surface 2S of the deposition mask 100.

[0052] Furthermore, the width of the connector CA has a predetermined dimension. Specifically, the width of the connector CA can be from 15 μm to 33 μm. More specifically, the width of the connector CA can be from 19 μm to 33 μm. More specifically, the width of the connector CA can be from 20 μm to 27 μm. When the width of the connector CA exceeds 33 μm, it is difficult to achieve a resolution of 500 PPI or higher. In addition, when the width of the connector CA is less than 15 μm, defects may occur during the deposition process.

[0053] The small surface hole V1 faces the deposition substrate 300. The small surface hole V1 is placed close to the deposition substrate 300. Therefore, the small surface hole V1 has a shape corresponding to the deposition pattern DP.

[0054] The large surface aperture V2 faces the organic material deposition container 400. Therefore, organic material supplied from the organic material deposition container 400 can be accommodated through the large surface aperture V2 with a relatively wide width. In addition, fine patterns can be rapidly formed on the deposition substrate 300 through the small surface aperture V1.

[0055] Therefore, the organic material contained by the large surface hole V2 is deposited on the deposition substrate 300 through the small surface hole V1. Accordingly, any one of red, green, and blue pixel patterns is formed on the deposition substrate 300. Then, the above process is repeated. Thus, all red, green, and blue pixel patterns are formed on the deposition substrate 300.

[0056] As described above, the deposition mask is stretched in one direction to be fixed to the mask frame. Specifically, the deposition mask 100 can be stretched in the first direction.

[0057] Therefore, tensile stress will form inside the deposition mask 100. Furthermore, stress still exists inside the deposition mask 100 after it is fixed to the mask frame 200. Due to this residual stress, the ripples formed on the surface of the deposition mask 100 may increase.

[0058] Therefore, the intervals between the effective regions traversed by the organic material may differ. Additionally, the intervals of the vias disposed within the effective regions may also differ. Consequently, when a deposition pattern is formed on the deposition substrate using a deposition mask, the intervals of the deposition pattern may change. Therefore, the deposition reliability of the deposition mask may decrease.

[0059] The following will describe a deposition mask that can solve the above problems.

[0060] Figure 4 is a plan view of the deposition mask according to this embodiment. Figures 5 to 7 are views taken along the AA' region of Figure 4.

[0061] Referring to Figures 4 to 7, the deposition mask 100 includes the deposition area DA and the non-deposition area NDA.

[0062] The deposition region DA is the region used to form the deposition pattern. The deposition region DA includes the effective region AA and the ineffective region UA. The effective region AA is the region through which the organic material passes through the through-hole TH. In addition, the ineffective region UA ​​is the region through which the through-hole TH is not formed.

[0063] In the figure, the effective area AA is shown as a square. However, this embodiment is not limited to this. The effective area AA can be a rectangle.

[0064] The valid region AA may include a plurality of valid regions. The plurality of valid regions are spaced apart in the first direction.

[0065] The sedimentation region DA is the region in the first direction from the starting point of the first effective region to the ending point of the last effective region.

[0066] The invalid region UA ​​is the region outside the valid region AA. The invalid region UA ​​can be divided into the first invalid region UA1 and the second invalid region UA2 according to its location.

[0067] The first ineffective region UA1 is the region between the effective regions AA. Therefore, a plurality of first ineffective regions UA1 are spaced apart in the first direction 1D. In addition, the second ineffective region UA2 is the region between the effective regions AA and the deposition mask 100. Alternatively, the second ineffective region UA2 is the region between the two ends of the metal plate in the second direction.

[0068] The non-deposition region NDA is a region that does not participate in deposition. The non-deposition region NDA includes a frame fixing region. The frame fixing region is the region where the deposition mask 100 is fixed to the mask frame 200. In addition, the non-deposition region NDA may include at least one half-etched portion HF and an opening portion OA. The half-etched portion HF can be formed by partially etching the metal plate 10. In addition, the opening portion OA can be formed by etching the entire metal plate 10.

[0069] The semi-etched portion HF can disperse the stress generated when the deposition mask 100 is stretched. Therefore, the waviness of the deposition mask can be reduced.

[0070] In addition, the opening OA is the area used to fix clamps such as fixtures when stretching the deposition mask 100.

[0071] The through hole TH can be set in the effective area AA. Specifically, the through hole TH includes a small surface hole V1, a large surface hole V2, and a connecting part CA. The connecting part CA connects the small surface hole V1 and the large surface hole V2.

[0072] A pattern P can be set in a non-valid area UA. Specifically, a plurality of patterns P can be set in the first non-valid area UA1. That is, patterns P can be arranged between valid areas AA. In other words, patterns P can be arranged between adjacent valid areas AA.

[0073] Pattern P can disperse the residual stress of the deposition mask 100. Therefore, the stress of the deposition mask can be relieved. Therefore, the residual stress of the deposition mask 100 can be dispersed and not concentrated in one area. Therefore, the corrugation size of the deposition mask 100 can be reduced by pattern P.

[0074] Therefore, the variation in the spacing between effective areas and / or the variation in the spacing between through holes located within the effective areas can be reduced. In other words, the positional variation of the effective areas and the positional variation of the through holes can be reduced.

[0075] Therefore, when a deposition pattern is formed on a deposition substrate using the deposition mask 100, the deposition pattern can be formed at a desired location on the deposition substrate 300. Thus, the deposition mask according to this embodiment can have improved deposition reliability.

[0076] Pattern P and through hole TH can be formed into different shapes. For example, pattern P and through hole TH can have different widths. In addition, pattern P and through hole TH can have different shaped inner surfaces.

[0077] For example, the width of the through hole TH and the width of the pattern P may change as the metal plate 10 extends along its thickness direction. That is, the difference between the maximum and minimum widths of the through hole TH may be greater than the difference between the maximum and minimum widths of the pattern P.

[0078] For example, the first surface 1S and the second surface 2S of the metal plate 10 are etched to form a small surface hole V1 and a large surface hole V2, respectively. The through hole TH can be formed by a connecting portion CA that connects the small surface hole V1 and the large surface hole V2. For example, the through hole TH can be formed by etching the metal plate 10 using an etchant.

[0079] Therefore, the inner surface of the through hole TH may have curvature. Therefore, the width of the through hole TH can change as it extends from the first surface 1S to the second surface 2S.

[0080] Alternatively, the pattern P can be formed by etching the first surface 1S or the second surface 2S of the metal plate 10. For example, the pattern P can be formed using a laser. For example, the pattern P can be formed by irradiating a laser along the direction of the first surface 1S or the second surface 2S.

[0081] Therefore, the angle of the inner surface of the through hole TH can be greater than the angle of the inner surface of the pattern P.

[0082] Referring to FIG. 5, the pattern P can be formed by penetrating the first surface 1S and the second surface 2S. Specifically, the laser irradiates and penetrates the metal plate 10 along the direction of the first surface 1S or the second surface 2S. Therefore, the pattern P can form a hole. That is, the pattern P can be a hole formed in the deposition mask 100.

[0083] Since the pattern P is formed as a hole, the residual stress on the first surface 1S and the second surface 2S can be dispersed by the pattern P.

[0084] Alternatively, referring to Figures 6 and 7, the pattern P can be formed by partially removing the first surface 1S or the second surface 2S. Specifically, a laser can be irradiated along the direction of the first surface 1S or the second surface 2S to partially remove the first surface 1S or the second surface 2S. Therefore, the pattern P can form a groove shape. That is, the pattern P can be a groove formed in the deposition mask 100.

[0085] Therefore, the inner surface of pattern P can be a plane. Therefore, the width change of pattern P can be very small during the extension from the first surface 1S to the second surface 2S.

[0086] Since the pattern P is formed in the shape of a groove, the residual stress on the first surface 1S or the second surface 2S can be dispersed by the pattern P. Furthermore, when the pattern P is formed on the first surface 1S that forms the small surface hole V1, the difference in the amount of residual metal on the first surface 1S and the second surface 2S can be reduced. Therefore, it is possible to prevent the deposition mask from bending in one direction.

[0087] The width W1 of pattern P can have a set size. The width W1 of pattern P can be different from the width W2 of small surface hole V1. For example, the width W1 of pattern P can be smaller than the width W2 of small surface hole W1.

[0088] Alternatively, the width W1 of pattern P may be different from the width W3 of large surface hole V2. For example, the width W1 of pattern P may be smaller than the width W3 of large surface hole V2.

[0089] Here, the width W1 of pattern P refers to the maximum width of pattern P, the width W2 of small surface hole V1 refers to the maximum width of small surface hole V1, and the width W3 of large surface hole V2 refers to the maximum width of large surface hole V2.

[0090] Alternatively, the width W1 of pattern P may be different from the first distance D1 between pattern P and small surface hole V1 in the first direction. For example, the width W1 of pattern P may be less than the first distance D1.

[0091] Alternatively, the width W1 of pattern P may be different from the second distance D2 between pattern P and the large surface hole V2 in the first direction. For example, the width W1 of pattern P may be smaller than the second distance D2.

[0092] For example, the width W1 of pattern P can be from 0.005 mm to 20 mm. In addition, the tilt angle of the inner surface of pattern P can be 60° or greater.

[0093] Because the pattern P has the aforementioned set width, the deposition reliability of the deposition mask can be improved. Specifically, when the width of the pattern P is large, the distance between the pattern P and the effective area AA may be very small due to errors in the processing. Alternatively, the pattern P may be partially formed within the effective area AA.

[0094] Therefore, organic materials may pass through pattern P. Therefore, in the deposition mask according to this embodiment, the deposition reliability of the deposition mask can be improved by setting the width of the pattern as described above.

[0095] The deposition mask according to this embodiment improves deposition reliability through patterning.

[0096] The deposition mask is fixed by a mask frame. At this time, the deposition mask is stretched longitudinally. Therefore, after the deposition mask is fixed to the mask frame, tensile stress may remain inside the deposition mask. Due to the residual stress, the waviness of the deposition mask surface may increase. Therefore, the spacing between the effective areas of the deposition mask may change. In addition, the spacing between the vias set in the effective areas may change.

[0097] The deposition mask may include a pattern disposed on the deposition area. Specifically, the pattern may be arranged between adjacent effective areas.

[0098] The residual stress of the deposition mask can be dispersed by the pattern. Therefore, the waviness of the deposition mask can be reduced.

[0099] Therefore, the variation in the spacing between effective regions and the spacing between vias within the effective region is minimal. Thus, the deposition mask exhibits better deposition reliability.

[0100] Furthermore, the patterns and vias are formed by different processes. Therefore, the shape and size of the patterns can be formed in various ways. Correspondingly, the shape and size of the patterns can be formed in various ways depending on the magnitude of the tensile stress applied to the deposition mask. Therefore, patterns with various shapes and sizes can be formed depending on the size of the deposition mask and the operating environment. Therefore, the deposition mask can have improved deposition reliability.

[0101] Furthermore, the difference in pattern width can be very small in the thickness direction of the metal plate. Therefore, the difference in the amount of metal removed from the first and second surfaces of the deposition mask can be reduced. Thus, the deposition mask can be prevented from bending in one direction due to the difference between the residual metal on the first and second surfaces.

[0102] Various arrangements and shapes of patterns of deposition masks according to other embodiments will now be described with reference to Figures 8 to 20. In describing deposition masks according to another embodiment, descriptions identical or similar to those of deposition masks according to the embodiments described above will be omitted.

[0103] Referring to FIG8, the deposition mask 100 may include a plurality of patterned portions. For example, the deposition mask 100 may include a first patterned portion PA1 and a second patterned portion PA2. For ease of explanation, FIG8 only shows the first patterned portion PA1 and the second patterned portion PA2. However, this embodiment is not limited thereto. The deposition mask may include three or more patterned portions.

[0104] The first pattern portion PA1 may include a plurality of first patterns P1. The plurality of first patterns P1 may be spaced apart in the second direction 2D. The second pattern portion PA2 may include a plurality of second patterns P2. The plurality of second patterns P2 may be spaced apart in the second direction 2D.

[0105] The first pattern part PA1 and the second pattern part PA2 may be spaced apart from each other in the first direction 1D.

[0106] According to another embodiment, the deposition mask 100 includes a first patterned portion PA1 and a second patterned portion PA2. Therefore, patterns can be formed at different locations within the first ineffective region UA1. Therefore, the waviness of the deposition mask is reduced. Therefore, the deposition reliability of the deposition mask can be improved.

[0107] Referring to Figures 9 and 10, the deposition mask 100 may include a plurality of patterned portions. For example, the deposition mask 100 may include a first patterned portion PA1, a second patterned portion PA2, and a third patterned portion PA3. For ease of explanation, Figures 9 and 10 only show the first patterned portion PA1, the second patterned portion PA2, and the third patterned portion PA3. However, this embodiment is not limited to this. The deposition mask may include four or more patterned portions.

[0108] The first pattern portion PA1 may include a plurality of first patterns P1. The plurality of first patterns P1 may be spaced apart in the second direction 2D. The second pattern portion PA2 may include a plurality of second patterns P2. The plurality of second patterns P2 may be spaced apart in the second direction 2D. The third pattern portion PA3 may include a plurality of third patterns P3. The plurality of third patterns P3 may be spaced apart in the second direction 2D.

[0109] The first pattern part PA1, the second pattern part PA2 and the third pattern part PA3 may be spaced apart from each other in the first direction 1D.

[0110] Referring to Figure 9, the patterns of the first pattern part PA1, the second pattern part PA2, and the third pattern part PA3 can be arranged in a herringbone pattern. That is, the second pattern P2 is arranged between adjacent first patterns P1. In addition, the third pattern P3 is arranged between adjacent second patterns P2.

[0111] Alternatively, referring to FIG10, the patterns of the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 can be arranged along the first direction 1D. That is, the patterns of the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 can face each other in the first direction 1D.

[0112] Additionally, the deposition mask 100 may include a semi-etched portion HF disposed in the non-deposition region NDA. The semi-etched portion HF may be formed by partially removing the first surface 1S of the metal plate 10. That is, the semi-etched portion HF may be a groove formed on the first surface 1S.

[0113] The semi-etched portion HF can disperse the stress in the non-deposited area NDA. Therefore, the waviness of the non-deposited area NDA can be reduced. Therefore, when depositing organic materials on the deposition substrate using the deposition mask 100, gaps can be prevented from forming between the deposition mask and the deposition substrate.

[0114] Therefore, it is possible to prevent an increase in the distance between the small surface hole V1 and the deposition substrate 300. Therefore, it is possible to prevent a decrease in deposition quality caused by the shading effect.

[0115] The number of patterns in the first pattern section PA1, the second pattern section PA2, and the third pattern section PA3 may be different. Specifically, the number of patterns in the first pattern P1, the second pattern P2, and the third pattern P3 may be different. More specifically, the number of patterns in the first pattern P1 may be greater than the number of patterns in the second pattern P2 and the third pattern P3. In addition, the number of patterns in the second pattern P2 may be greater than the number of patterns in the third pattern P3.

[0116] Therefore, the number of patterns may decrease during the process of extending from the effective region AA to the central portion C of the first ineffective region UA1. That is, the area of ​​the opening region formed by the patterns may decrease during the process of extending from the effective region AA to the central portion C of the first ineffective region UA1.

[0117] Therefore, when extending from the outside to the inside of the first ineffective region UA1 in the first direction 1D, the number of patterns and the area of ​​the opening region may decrease. In addition, when extending from the outside to the inside of the first ineffective region UA1 in the second direction 2D, the number of patterns and the area of ​​the opening region may increase.

[0118] In the deposition mask according to another embodiment, as it extends from the outside to the inside of the first non-effective region UA1 in the first direction 1D, the number of patterns and the area of ​​the opening region are reduced. Therefore, the stress dispersion effect in the region near the effective region is enhanced. Consequently, the waviness of the region adjacent to the effective region is reduced. Correspondingly, the positional variation of the vias is also reduced.

[0119] Furthermore, in the deposition mask according to another embodiment, when the first ineffective region UA1 extends from the outside to the inside in the second direction 2D, the number of patterns and the area of ​​the opening region increase. Accordingly, residual stress in the outer and central portions of the deposition mask in the second direction can also be formed.

[0120] Referring to Figures 11 and 12, the deposition mask 100 may include a plurality of patterned portions. For example, the deposition mask 100 may include a first patterned portion PA1, a second patterned portion PA2, and a third patterned portion PA3. Only the first patterned portion PA1, the second patterned portion PA2, and the third patterned portion PA3 are shown in Figures 11 and 12 for ease of explanation. However, this embodiment is not limited thereto. The deposition mask may include four or more patterned portions.

[0121] The first pattern portion PA1 may include a plurality of first patterns P1. The plurality of first patterns P1 may be spaced apart in the second direction 2D. The second pattern portion PA2 may include a plurality of second patterns P2. The plurality of second patterns P2 may be spaced apart in the second direction 2D. The third pattern portion PA3 may include a plurality of third patterns P3. The plurality of third patterns P3 may be spaced apart in the second direction 2D.

[0122] The first pattern part PA1, the second pattern part PA2 and the third pattern part PA3 may be spaced apart from each other in the first direction 1D.

[0123] Referring to Figure 11, the patterns of the first pattern part PA1, the second pattern part PA2, and the third pattern part PA3 can be arranged in a zigzag pattern. That is, the second pattern P2 is arranged between adjacent first patterns P1. In addition, the third pattern P3 is located between adjacent second patterns P2.

[0124] Alternatively, referring to FIG12, the patterns of the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 can be arranged in the first direction 1D. That is, the patterns of the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 can face each other in the first direction 1D.

[0125] The number of patterns in the first pattern section PA1, the second pattern section PA2, and the third pattern section PA3 may be different. Specifically, the number of patterns in the first pattern P1, the second pattern P2, and the third pattern P3 may be different. More specifically, the number of patterns in the first pattern P1 may be less than the number of patterns in the second pattern P2 and the third pattern P3. In addition, the number of patterns in the second pattern P2 may be less than the number of patterns in the third pattern P3.

[0126] Therefore, the number of patterns may increase as the process extends from the effective region AA to the central portion C of the first ineffective region UA1. That is, the area of ​​the opening region formed by the patterns may increase as the process extends from the effective region AA to the central portion C of the first ineffective region UA1.

[0127] Therefore, when extending from the outside to the inside of the first ineffective region UA1 in the first direction 1D, the number of patterns and the area of ​​the opening region may increase. In addition, when extending from the outside to the inside of the first ineffective region UA1 in the second direction 2D, the number of patterns and the area of ​​the opening region may increase.

[0128] In the deposition mask according to another embodiment, the number of patterns and the area of ​​the opening region increase as it extends from the outside to the inside of the first ineffective region UA1 in the first direction 1D. Therefore, the stress dispersion effect at the center of the first ineffective region is enhanced. Therefore, the waviness of the first ineffective region can be reduced. Therefore, the variation in spacing between effective regions is reduced.

[0129] Furthermore, in the deposition mask according to another embodiment, as it extends from the outside to the inside of the first ineffective region UA1 in the second direction 2D, the number of patterns and the area of ​​the opening region increase. Accordingly, residual stress in the outer and central portions of the deposition mask in the second direction can also be formed.

[0130] Referring to Figures 13 and 14, the deposition mask 100 may include a plurality of patterned portions. For example, the deposition mask 100 may include a first patterned portion PA1, a second patterned portion PA2, and a third patterned portion PA3. In Figures 13 and 14, for ease of description, only the first patterned portion PA1, the second patterned portion PA2, and the third patterned portion PA3 are shown. However, this embodiment is not limited to this. The deposition mask may include four or more patterned portions.

[0131] The first pattern portion PA1 may include a plurality of first patterns P1. The plurality of first patterns P1 may be spaced apart in the second direction 2D. The second pattern portion PA2 may include a plurality of second patterns P2. The plurality of second patterns P2 may be spaced apart in the second direction 2D. The third pattern portion PA3 may include a plurality of third patterns P3. The plurality of third patterns P3 may be spaced apart in the second direction 2D.

[0132] The first pattern part PA1, the second pattern part PA2 and the third pattern part PA3 may be spaced apart from each other in the first direction 1D.

[0133] At least one of the plurality of valid regions AA may define two invalid regions arranged at both ends along the first direction 1D. The number of patterned parts in the regions adjacent to the valid regions at the centers of the two invalid regions may be different. That is, the areas of the opening regions provided at both ends of the valid region AA along the first direction 1D may be different.

[0134] Referring to FIG13, the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 can be arranged in the region adjacent to the first end E1 of the effective region AA. Alternatively, only the first pattern portion PA1 can be arranged in the region adjacent to the second end E2 of the effective region AA.

[0135] Alternatively, referring to FIG14, the first pattern portion PA1 and the second pattern portion PA2 may be arranged in the region adjacent to the first end E1 of the effective region AA. In addition, the pattern portion may not be arranged in the region adjacent to the second end E2 of the effective region AA.

[0136] The region adjacent to the end of the effective region AA is the region between the effective region AA and the central part of the first ineffective region UA1.

[0137] Therefore, the number of patterns set in the region adjacent to the first end E1 of the effective area AA is different from the number of patterns set in the region adjacent to the second end E2 of the effective area AA. That is, the area of ​​the opening region set in the region adjacent to the first end E1 of the effective area AA may be different from the area of ​​the opening region set in the region adjacent to the second end E2 of the effective area AA.

[0138] In addition, the number of patterns or the area of ​​the opening regions set in the plurality of first non-effective regions UA1 may be different from each other.

[0139] Referring to Figures 13 and 14, the first ineffective region UA1 may include ineffective regions 1-1 UA1-1 and 1-2 UA1-2 spaced apart along a first direction. That is, the effective region AA may be located between ineffective regions 1-1 UA1-1 and 1-2 UA1-2. Specifically, an effective region may be arranged between ineffective regions 1-1 UA1-1 and 1-2 UA1-2.

[0140] The number of patterns arranged in the non-valid region UA1-1 (1-1) and the number of patterns arranged in the non-valid region UA1-2 (1-2) can be different. For example, the number of patterns arranged in the non-valid region UA1-1 (1-1) may be greater than the number of patterns arranged in the non-valid region UA1-2 (1-2). That is, the area of ​​the open region in the non-valid region UA1-1 (1-1) may be larger than the area of ​​the open region in the non-valid region UA1-2 (1-2).

[0141] In a deposition mask according to another embodiment, the number of patterns and the area of ​​the opening area disposed in the regions adjacent to both ends of the effective region may be different. Alternatively, the number of patterns and the area of ​​the opening area disposed in each first non-effective region may be different.

[0142] Through holes, patterns, and opening areas can be formed in the metal sheet. A rolling process can be performed before forming the through holes, patterns, and opening areas in the metal sheet. In this way, the thickness of the metal sheet can be set to a predetermined thickness.

[0143] The stress process generates stress inside the metal plate. In addition, the surface of the metal plate may develop ripples due to stress.

[0144] Therefore, the corrugation distribution of the metal plate must be measured before forming through holes, patterns, and opening areas on the metal plate. Subsequently, the number of patterns formed in areas with large corrugations and areas with small corrugations may differ.

[0145] For example, many patterns are formed in areas with larger ripples. In addition, fewer patterns are formed in areas with smaller ripples. Therefore, ripples caused by tensile stress generated during the stretching of the deposition mask can be reduced.

[0146] That is, many patterns are formed in areas with larger corrugations, while fewer patterns are formed in areas with smaller corrugations. Therefore, the opening area of ​​the areas with smaller corrugations is relatively reduced to distribute tensile stress. Thus, after the deposition mask is fixed to the mask frame, further increase in corrugations due to the raw material characteristics of the metal plate can be prevented.

[0147] Referring to Figures 15 and 16, the shape of the effective area AA may be different.

[0148] Specifically, the width of the effective region AA can be changed when it extends in one direction. Specifically, the width of at least one effective region among the plurality of effective regions can be changed.

[0149] For example, referring to FIG15, the width of the effective area AA can be changed when it extends along the first direction 1D.

[0150] Alternatively, referring to Figure 16, the width of the effective area AA may change as it extends along the second direction 2D.

[0151] That is to say, the effective area AA of the deposition mask 100 can be formed into various shapes. Accordingly, the pattern deposited on the deposition substrate 300 can form various designs.

[0152] The deposition mask 100 may include a plurality of patterns P, the number of patterns P may vary at one end away from the effective area AA.

[0153] For example, referring to FIG15, the width of the effective area AA narrows as it extends from end 2-1 E2-1 to end 1-1 E1-1. In addition, the number of patterns P decreases from end 2-1 E2-1 to end 1-1 E1-1.

[0154] Alternatively, referring to Figure 16, the width of the effective area AA narrows as it extends from end 2-2 E2-2 to end 1-2 E1-2. Furthermore, the number of patterns P increases from end 2-2 E2-2 to end 1-2 E1-2.

[0155] Therefore, in the deposition mask according to another embodiment, the pattern can be arranged differently according to the shape of the effective area AA. Therefore, even if the shape of the effective area AA changes, the residual stress can be effectively dispersed by the pattern. Therefore, the waviness of the deposition mask can be reduced. Therefore, the deposition reliability of the deposition mask can be improved.

[0156] Referring to Figures 17 to 20, a deposition mask 100 according to another embodiment may include a plurality of patterned portions. For example, the deposition mask 100 may include a first patterned portion PA1, a second patterned portion PA2, and a third patterned portion PA3. In Figures 17 to 20, for ease of description, only the first patterned portion PA1, the second patterned portion PA2, and the third patterned portion PA3 are shown. However, this embodiment is not limited thereto. The deposition mask may include four or more patterned portions.

[0157] The first pattern portion PA1 may include a plurality of first patterns P1. The plurality of first patterns P1 may be spaced apart in the second direction 2D. The second pattern portion PA2 may include a plurality of second patterns P2. The plurality of second patterns P2 may be spaced apart in the second direction 2D. The third pattern portion PA3 may include a plurality of third patterns P3. The plurality of third patterns P3 may be spaced apart in the second direction 2D.

[0158] The first pattern part PA1, the second pattern part PA2 and the third pattern part PA3 may be spaced apart from each other in the first direction 1D.

[0159] The size of the pattern can change as it extends in one direction. Specifically, the size of the pattern can change as it extends in a first direction 1D.

[0160] Referring to Figure 17, the patterns of the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may have different sizes. Specifically, the size of the first pattern P1 may be larger than the sizes of the second pattern P2 and the third pattern P3. In addition, the size of the second pattern P2 may be larger than the size of the third pattern P3.

[0161] That is to say, the size of the pattern can be reduced during the process of extending from the end of the effective region to the center C of the first ineffective region UA1.

[0162] Alternatively, referring to Figure 18, the size of the first pattern P1 can be smaller than the sizes of the second pattern P2 and the third pattern P3. In addition, the size of the second pattern P2 can also be smaller than the size of the third pattern P3.

[0163] That is to say, the size of the pattern can be increased as it extends from the end of the effective area to the center C of the first ineffective area UA1.

[0164] Alternatively, the spacing of the patterns can vary as they extend in one direction. Specifically, the spacing of the patterns can change as they extend along a first direction 1D.

[0165] Referring to Figure 19, the distance G1 between the first pattern P1 and the second pattern P2 can be less than the distance G2 between the second pattern P2 and the third pattern P3.

[0166] That is to say, during the process of extending from the end of the effective region to the central part C of the first ineffective region UA1, the pattern spacing can be increased.

[0167] Alternatively, referring to Figure 20, the distance G1 between the first pattern P1 and the second pattern P2 can be greater than the distance G2 between the second pattern P2 and the third pattern P3.

[0168] That is to say, during the process of extending from the end of the effective region to the central part C of the first ineffective region UA1, the interval between patterns can be reduced.

[0169] Furthermore, although not shown in the figure, the size and spacing of the pattern may change as it extends along the first direction 1D.

[0170] In a deposition mask according to another embodiment, the size and spacing of the pattern can be changed.

[0171] Therefore, many patterns can be formed in areas adjacent to the effective area. Alternatively, many patterns can be formed in areas far from the effective area.

[0172] The metal sheet may have different physical properties, depending on the characteristics of the process or raw materials. Therefore, residual stress may be concentrated in the central or outer area of ​​the deposition mask.

[0173] Therefore, there are various ways to arrange the size and spacing of the patterns. Therefore, the position of the patterns can be controlled according to the physical properties of the metal plate. Therefore, the tensile stress caused by the tension of the deposition mask is effectively dispersed. Therefore, the waviness of the deposition mask can be reduced. Therefore, the deposition reliability of the deposition mask is improved.

[0174] Referring to Figures 21 and 22, the patterned area may be formed in an area other than the effective area AA.

[0175] Referring to Figure 21, pattern P can be formed in the non-deposition region NDA. Therefore, pattern P can be formed between the opening OA and the effective region AA.

[0176] Therefore, residual stress can be effectively dispersed in the non-deposited NDA region. In addition, the process of forming a separate half-etched portion in the non-deposited NDA region can be omitted.

[0177] Referring to Figure 22, pattern P can be formed in the second non-effective region UA2. That is, pattern P can be formed between the effective region AA and one end of the deposition mask 100 in the second direction.

[0178] Accordingly, pattern P can also be formed in the region outside the deposition region DA.

[0179] Therefore, residual stress can be effectively dispersed in areas outside the deposition region NDA. Furthermore, it prevents an increase in the distance between the small surface hole V1 and the deposition substrate 300. Thus, it prevents a decrease in deposition quality due to shading effects.

[0180] In addition, although not shown in the figure, pattern P can be formed in the non-deposition region NDA and the second ineffective region UA2.

[0181] Referring to Figure 23, a pattern P can be formed between the effective areas.

[0182] The area of ​​pattern P may be smaller than the area of ​​the first ineffective region UA1. Specifically, the area of ​​pattern P may be 90% or less, 80% or less, 70% or less, or 60% or less of the area of ​​the first ineffective region UA1. For example, the area of ​​pattern P may be 50% to 90% of the area of ​​the first ineffective region UA1.

[0183] When the area of ​​pattern P exceeds 90% of the area of ​​the first non-effective region UA1, a region of pattern P may be located within the effective region AA due to process errors. Therefore, the deposition reliability of the deposition mask may be reduced.

[0184] Furthermore, when the area of ​​pattern P is less than 50% of the area of ​​the first non-effective region UA1, the residual stress may not be effectively distributed between the effective regions through pattern P. Therefore, the deposition reliability of the deposition mask may be reduced.

[0185] The features, structures, effects, etc., described in the above embodiments are included in at least one embodiment of the present invention, but are not limited to one embodiment. Furthermore, those skilled in the art can combine or modify the features, structures, and effects described in the various embodiments to create other embodiments. Therefore, it should be understood that such combinations and modifications are included within the scope of the present invention.

[0186] Furthermore, the foregoing mainly describes embodiments of the present invention, but these embodiments are merely examples and do not limit the present invention. Those skilled in the art will understand that several variations and applications not described above can be made without departing from the basic characteristics of the embodiments of the present invention. For example, each component specifically represented in the embodiments of the present invention can be varied. Moreover, it should be understood that differences related to such variations and applications are included within the scope of the present invention as defined in the following claims. [Simplified Explanation of the Diagram]

[0027] FIG1 is a view showing the combination of the deposition mask and the frame according to an embodiment. FIG2 is a cross-sectional view of an organic material deposition apparatus including the deposition mask according to this embodiment. FIG3 is a view illustrating the formation of a deposition pattern on a deposition substrate through the through-holes of the deposition mask according to this embodiment. FIG4 is a plan view of the deposition mask according to an embodiment of the present invention. FIG5 to FIG7 are views taken along region AA' of FIG4. FIG8 to FIG23 are plan views of the deposition mask according to other embodiments.

Claims

1. A deposition mask, comprising: a metal plate including a deposition region and a non-deposition region, wherein, The metal plate is defined having a first longitudinal direction and a second width direction, wherein the deposition area includes a plurality of effective areas and an ineffective area disposed between the effective areas, wherein the metal plate includes a plurality of through holes and a patterned portion, the through holes being disposed in the effective areas and the patterned portion being disposed in the ineffective areas, wherein the patterned portion includes a first patterned portion disposed between the effective areas and including a plurality of first patterns adjacent to the effective areas; and a second patterned portion disposed between the effective areas and including a plurality of second patterns disposed further away from the effective areas than the first patterned portion, and wherein the width of the first pattern on a surface of the metal plate is different from the width of the second pattern on the surface.

2. The deposition mask as described in claim 1, wherein, The width of the first pattern on the surface of the metal plate is greater than the width of the second pattern on the surface.

3. The deposition mask as described in claim 1, wherein, The first patterns and the second patterns have different depths in a vertical direction.

4. The deposition mask as described in claim 3, wherein, The depth of the first patterns is greater than the depth of the second patterns.

5. The deposition mask as described in claim 1, wherein, The first pattern has a hole that extends through one surface of the metal plate and the other surface of the metal plate.

6. The deposition mask as described in claim 1, wherein, These second patterns have a groove shape, which is formed on one surface of the metal plate.

7. The deposition mask as described in claim 1, wherein, The number of the first patterns in the first pattern section is different from the number of the second patterns in the second pattern section.

8. The deposition mask as described in claim 7, wherein, The number of first patterns in the first pattern section is less than the number of second patterns in the second pattern section.

9. The deposition mask as described in claim 1, wherein, The effective areas include a first effective area and a second effective area spaced apart from the first effective area along the first direction, and wherein the ineffective area includes: a first ineffective area disposed between the first effective area and the second effective area and closer to the first effective area than the second effective area, and a second ineffective area disposed between the first effective area and the second effective area and closer to the second effective area than the first effective area, and wherein the first pattern portion and the second pattern portion are respectively disposed within the first ineffective area and the second ineffective area.

10. The deposition mask as described in claim 1, wherein, At least one of the first patterns overlaps with at least one of the second patterns along the first direction, and wherein the centers of the first patterns that overlap each other along the first direction are not aligned with the centers of the second patterns along the first direction.

11. The deposition mask as described in claim 1, wherein, One of the first patterns overlaps with at least two of the second patterns along the first direction.

12. The deposition mask as described in claim 11, wherein, The shape of the first pattern is the same as the shape of the second pattern, and the shape of the through hole is different from the shapes of the first pattern and the second pattern.

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