Biosensor structure

TWI934616BActive Publication Date: 2026-08-01POWERCHIP SEMICON MFG CORP
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Patents
Current Assignee / Owner
POWERCHIP SEMICON MFG CORP
Filing Date
2025-05-23
Publication Date
2026-08-01

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  • Figure TWG2TB001903961_001
    Figure TWG2TB001903961_001
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    Figure TWG2TB001903961_002
  • Figure TWG2TB001903961_003
    Figure TWG2TB001903961_003
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Abstract

A biosensor structure includes a substrate, a plurality of first doped regions, a plurality of second doped regions, a dielectric layer, and an insulating layer. The substrate includes a plurality of first cavities. The plurality of first doped regions are located in the substrate directly below the top surface of the substrate. The plurality of second doped regions are located in the substrate directly below the plurality of first cavities. The plurality of first doped regions and the plurality of second doped regions are arranged alternately. The dielectric layer is located on the substrate. The dielectric layer includes second cavities. The second cavities are located directly above the plurality of first doped regions and the plurality of second doped regions. The insulating layer is located within the plurality of first cavities and second cavities.
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Claims

1. A biosensor structure, comprising: The substrate includes multiple first cavities; Multiple first doped regions are located in the substrate directly below the top surface of the substrate; A plurality of second doped regions are located in the substrate directly below the plurality of first cavities, wherein the plurality of first doped regions and the plurality of second doped regions are arranged alternately; a dielectric layer is located on the substrate and includes a second cavity, wherein the second cavity is located directly above the plurality of first doped regions and the plurality of second doped regions; And an insulating layer, located in the plurality of first cavities and second cavities.

2. The biosensor structure as claimed in claim 1, wherein the biosensor structure includes an ion-sensitive field-effect transistor structure.

3. The biosensor structure of claim 1, wherein the substrate includes a first upper surface and a second upper surface, the first upper surface being higher than the second upper surface, the first doped region being located in the substrate directly below the first upper surface, and the second doped region being located in the substrate directly below the second upper surface.

4. The biosensor structure as claimed in claim 3, wherein the first upper surface is the top surface of the substrate, and the second upper surface is the bottom surface of the first cavity.

5. The biosensor structure as claimed in claim 1, wherein the bottom surface of the first doped region is higher than the top surface of the second doped region.

6. The biosensor structure as claimed in claim 1, wherein the second cavity is connected to a plurality of the first cavities.

7. The biosensor structure as described in claim 1, further comprising: The first interconnect structure is electrically connected to the first doped region; And a second interconnect structure electrically connected to the second doped region.

8. The biosensor structure as claimed in claim 7, wherein the first interconnect structure and the second interconnect structure are located outside the second cavity.

9. The biosensor structure as described in claim 1, further comprising: A termination layer is located between the dielectric layer and the top surface of the substrate.

10. The biosensor structure as described in claim 1, further comprising: A protective layer is located between the top surface of the insulating layer and the dielectric layer.