Semiconductor structure
Patent Information
- Authority / Receiving Office
- TW · TW
- Patent Type
- Patents
- Current Assignee / Owner
- POWERCHIP SEMICON MFG CORP
- Filing Date
- 2025-05-26
- Publication Date
- 2026-08-01
Smart Images
Figure TWG2TB001903964_001 
Figure TWG2TB001903964_002 
Figure TWG2TB001903964_003
Abstract
Claims
1. A semiconductor structure, comprising: The substrate has a front and a back side facing each other, and includes a component area and a sealing ring area; A conductive sealing ring structure is located in the sealing ring area and on the back side; A dielectric sealing ring structure is located between the conductive sealing ring structure and the back surface, and includes: a main body located in the sealing ring region; and an annular protrusion located in the sealing ring area, connected to the body portion and surrounding the element area, wherein the annular protrusion protrudes from the body portion toward the back side; and a sealing ring structure located in the sealing ring area and on the front side.
2. The semiconductor structure as claimed in claim 1, wherein the conductive sealing ring structure surrounds the element region.
3. The semiconductor structure as claimed in claim 1, wherein the conductive sealing ring structure is in direct contact with the dielectric sealing ring structure.
4. The semiconductor structure as claimed in claim 1, wherein the conductive sealing ring structure includes an internal interconnect structure.
5. The semiconductor structure as claimed in claim 4, wherein the interconnect structure includes pads, redistribution layers, or combinations thereof.
6. The semiconductor structure as claimed in claim 5, wherein the redistribution layer directly contacts the body portion.
7. The semiconductor structure as claimed in claim 1, wherein the material of the dielectric sealing ring structure comprises silicon nitride.
8. The semiconductor structure as claimed in claim 1, wherein the body portion is located in the element region.
9. The semiconductor structure as claimed in claim 1, wherein the main body portion and the annular protrusion are integrally formed.
10. The semiconductor structure of claim 1, wherein one end of the annular protrusion is directly connected to the body portion and the other end of the annular protrusion is directly connected to the substrate.
11. The semiconductor structure of claim 1, wherein the annular protrusion extends into the substrate.
12. The semiconductor structure as claimed in claim 1, wherein the dielectric sealing ring structure further comprises: A columnar protrusion is located in the sealing ring area and connected to the main body, wherein the columnar protrusion protrudes from the main body toward the back side.
13. The semiconductor structure of claim 12, wherein the columnar protrusion is between the element region and the annular protrusion.
14. The semiconductor structure of claim 12, wherein the annular protrusion is between the element region and the columnar protrusion.
15. The semiconductor structure of claim 12, wherein the main body portion and the columnar protrusion are integrally formed.
16. The semiconductor structure of claim 12, wherein one end of the columnar protrusion is directly connected to the body portion and the other end of the columnar protrusion is directly connected to the substrate.
17. The semiconductor structure of claim 12, wherein the columnar protrusion extends into the substrate.
18. The semiconductor structure as claimed in claim 1, wherein the sealing ring structure surrounds the element region.
19. The semiconductor structure as described in claim 1, further comprising: A substrate perforation is formed, passing through the substrate, located between the conductive sealing ring structure and the sealing ring structure, and electrically connected to the conductive sealing ring structure and the sealing ring structure.