Thin film deposition device and thin film deposition method

Abstract

This invention discloses a thin film deposition apparatus, including a reaction chamber, a stage, a spray head, a plasma generation system, a first gas supply device, and a second gas supply device. The plasma generation system includes a plasma generator that delivers plasma gas vertically into the reaction chamber via a plasma pipeline. The first gas supply device delivers a first precursor gas horizontally into the reaction chamber via a first pipeline. The second gas supply device delivers a second precursor gas vertically into the reaction chamber via a second pipeline. The first gas supply device first provides the first precursor gas, and the second gas supply device then begins providing the second precursor gas; during this period, the plasma generator continuously delivers plasma gas without shutting off.

Claims

1. A thin film deposition apparatus, comprising: One reaction chamber; A stage is disposed within the reaction chamber, and the stage has a heater; A spray head, disposed at the top of the reaction chamber, having multiple spray holes facing the stage; a plasma generation system, including a plasma generator connected to the reaction chamber, supplying plasma gas into the reaction chamber via a plasma conduit in a vertical direction, the plasma gas being sprayed onto the stage through the multiple spray holes; a first gas supply device connected to the reaction chamber, supplying a first precursor gas into the reaction chamber via a first conduit in a horizontal direction; a second gas supply device connected to the reaction chamber, supplying a second precursor gas into the reaction chamber via a second conduit in the vertical direction, the second precursor gas being sprayed onto the stage through the multiple spray holes; and a workpiece disposed on the stage, the workpiece being heated by a heater; During a process, the first gas supply device first provides the first precursor gas, the second gas supply device first provides the second precursor gas, and the plasma generator continuously supplies the plasma gas during the process without shutting off; and wherein the first precursor gas is unaffected by the plasma gas and deposits a first thin film on the surface of the workpiece; the second precursor gas is excited by the plasma gas and deposits a second thin film on the first thin film, while simultaneously undergoing an annealing treatment.

2. The thin film deposition apparatus as claimed in claim 1, wherein, The plasma generation system also includes a power source disposed below the reaction chamber. The power source generates a bias voltage and provides a bias field within the reaction chamber.

3. The thin film deposition apparatus as claimed in claim 1, wherein, The plasma generation system also includes a flow module connected to the plasma pipeline for controlling the flow rate of the plasma gas.

4. The thin film deposition apparatus as claimed in claim 1, wherein, The plasma generator provides 1-5000W of energy.

5. A method for thin film deposition, comprising: A thin film deposition apparatus is provided, comprising a reaction chamber, a stage, and a spray head. The stage is disposed within the reaction chamber and has a heater. The spray head is disposed at the top of the reaction chamber and has multiple spray holes facing the stage. A workpiece is provided on the stage, and the heater heats the workpiece. A plasma generation system is provided, comprising a plasma generator and a plasma line. The plasma line continuously delivers a plasma gas into the reaction chamber in a vertical direction, and the plasma gas is sprayed onto the workpiece through the multiple spray holes. A first precursor gas is delivered into the reaction chamber in a horizontal direction. The first precursor gas is unaffected by the plasma gas and deposits a first thin film on the surface of the workpiece. A second precursor gas is delivered into the reaction chamber in the vertical direction. The second precursor gas is sprayed onto the workpiece through the multiple spray holes and is excited by the plasma gas, depositing a second thin film on the first thin film. The second precursor gas undergoes an annealing process while forming the second thin film.

6. The thin film deposition method as described in claim 5, wherein, The plasma generation system also includes a power source disposed below the reaction chamber. The power source generates a bias voltage and provides a bias field within the reaction chamber.

7. The thin film deposition method as described in claim 5, wherein, The plasma generation system also includes a flow module connected to the plasma pipeline for controlling the flow rate of the plasma gas.

8. The thin film deposition method as described in claim 5, wherein, The plasma generator provides 1-5000W of energy.

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