Heating apparatus and method for heating semiconductor processing target substrate in laser annealing process, laser annealing apparatus and method applying the same, and semiconductor device manufacturing apparatus and method

Abstract

This invention relates to a heating apparatus and method for heating a semiconductor substrate in a laser annealing process, a laser annealing apparatus and method using the same, and an apparatus and method for manufacturing semiconductor devices. The disclosed heating apparatus, as a heating device for heating a semiconductor substrate in a laser annealing process utilizing a laser, can be configured to heat the semiconductor substrate mounted thereon and control the heating temperature differently depending on the region of the semiconductor substrate, and can be configured to control the temperature of regions in the semiconductor substrate with relatively low laser energy density to be higher than the temperature of regions with relatively high laser energy density.

Description

[Technical Field]

[0001] This invention relates to apparatus and methods for semiconductor manufacturing, and more particularly to apparatus and methods for heating a workpiece, apparatus and methods for laser annealing, and apparatus and methods for manufacturing semiconductor devices. [Previous Technology]

[0002] Typically, semiconductor devices / electronic components can be manufactured through multiple processes. For example, processes used to manufacture semiconductor devices / electronic components may include thin-film deposition, photolithography, etching, ion implantation, and annealing (i.e., heat treatment). Annealing is a process that improves and ensures the characteristics of a device by stabilizing, activating, melting, or eliminating defects such as seams within the substrate or the thin film formed on the substrate. The annealing (heat treatment) process may include laser annealing, rapid thermal process (RTP), etc.

[0003] Laser annealing processes utilize lasers to perform heat treatment primarily on the surface of the substrate, minimizing the impact on other processes and reducing thermal damage. It also offers advantages such as easier temperature control. However, with increasing integration of semiconductor / electronic components and continuous shrinkage of component sizes, temperature inhomogeneity during laser annealing can induce various problems in component manufacturing characteristics due to variations in the substrate's temperature. Furthermore, due to limitations in the laser optical system (light source), the laser beam size varies depending on the distance from the shaped laser beam to the substrate, leading to changes in energy density. Therefore, during laser annealing, undesirable temperature distribution (i.e., uneven heat treatment temperature) occurs within the substrate, potentially causing performance degradation and reduced yield in semiconductor / electronic components. [Summary of the Invention]

[0004] Problem to be solved by the invention The problem to be solved by the present invention is to provide a heating apparatus and method for improving the uniformity of annealing (heat treatment) temperature by annealing a semiconductor workpiece (i.e., a semiconductor substrate) using a laser.

[0005] Furthermore, the problem that the present invention seeks to solve is to provide a laser annealing apparatus and method employing the above-described heating apparatus and method.

[0006] Furthermore, the problem to be solved by the present invention is to provide a semiconductor device manufacturing apparatus and method employing the above-described heating device and method.

[0007] The problems to be solved by the present invention are not limited to those mentioned above. Those skilled in the art to which the present invention pertains can understand other problems not mentioned by means of the following description.

[0008] Technical Means for Solving the Problem According to an embodiment of the present invention, a heating device for heating a semiconductor substrate to be processed in a laser annealing process is provided. The heating device is configured to heat the semiconductor substrate to be processed mounted thereon and control the heating temperature differently according to different regions of the semiconductor substrate to be processed, and is configured to control the temperature of a region of the semiconductor substrate to be processed with a relatively low laser energy density (hereinafter referred to as "laser energy density") to be higher than the temperature of a region with a relatively high laser energy density.

[0009] The heating device can control the heating temperature differently according to the region of the semiconductor substrate to be processed, so that the laser energy density d1 and laser absorptivity a1 of the region with relatively low laser energy density and the laser energy density d2 and laser absorptivity a2 of the region with relatively high laser energy density in the semiconductor substrate to be processed satisfy the mathematical formula -0.1 < [(d2×a2)-(d1×a1)] / (d2×a2) < 0.1.

[0010] The heating device can control the heating temperature differently according to the region of the semiconductor substrate to be processed, so that the laser energy density D1 and laser absorptivity A1 of the region with the lowest laser energy density and the laser energy density D2 and laser absorptivity A2 of the region with the highest laser energy density in the semiconductor substrate to be processed satisfy the mathematical formula -0.1 < [(D2×A2)-(D1×A1)] / (D2×A2) < 0.1.

[0011] The heating device may include multiple heating zones at different radial distances from its center, and the heating temperatures of at least two of the multiple heating zones may be different from each other.

[0012] The heating device may include a plurality of heating regions arranged parallel to each other along a second direction perpendicular to the first direction between the two ends along the first direction, and the heating temperatures of at least two of the plurality of heating regions may be different from each other.

[0013] When viewed from above, the plurality of heating areas may have a left-right symmetrical or up-down symmetrical heating temperature distribution.

[0014] When viewed from above, the plurality of heating zones may have a left-right asymmetric or up-down asymmetric heating temperature distribution.

[0015] The heating device may include multiple partial heating areas and a remaining heating area other than these partial heating areas, wherein the heating temperature of at least one of the multiple partial heating areas may be controlled to be different from the heating temperature of the remaining heating area.

[0016] In the heating temperature distribution through the heating device, the range of the center temperature can be 30℃ to 1000℃.

[0017] In the heating temperature distribution through the heating device, the difference between the lowest temperature and the highest temperature can be less than 500°C.

[0018] According to another embodiment of the present invention, a laser annealing apparatus is provided, comprising: the aforementioned heating apparatus; and a laser irradiation apparatus for irradiating a semiconductor substrate to be processed mounted on the heating apparatus with a laser for annealing.

[0019] The laser irradiation device can be configured to irradiate the semiconductor substrate to be processed with laser in a scanning or stepping manner.

[0020] The laser irradiation device may include: a laser generator; and a laser scanner for irradiating the semiconductor substrate to be processed with laser generated in the laser generator.

[0021] According to another embodiment of the present invention, a heating method for heating a semiconductor substrate to be processed in a laser annealing process is provided. The method includes heating the semiconductor substrate to be processed and controlling the heating temperature differently according to different regions of the semiconductor substrate to be processed. The step of controlling the heating temperature differently according to different regions of the semiconductor substrate to be processed includes controlling the temperature of a region of the semiconductor substrate to be processed with a relatively low laser energy density (hereinafter referred to as "laser energy density") to be higher than the temperature of a region with a relatively high laser energy density.

[0022] The heating temperature can be controlled differently according to different regions of the semiconductor substrate to be processed, so that the laser energy density d1 and laser absorptivity a1 of the region with relatively low laser energy density and the laser energy density d2 and laser absorptivity a2 of the region with relatively high laser energy density in the semiconductor substrate to be processed satisfy the mathematical formula -0.1 < [(d2×a2)-(d1×a1)] / (d2×a2) < 0.1.

[0023] The heating temperature can be controlled differently according to different regions of the semiconductor substrate to be processed, so that the laser energy density D1 and laser absorptivity A1 of the region with the lowest laser energy density and the laser energy density D2 and laser absorptivity A2 of the region with the highest laser energy density in the semiconductor substrate to be processed satisfy the mathematical formula -0.1 < [(D2×A2)-(D1×A1)] / (D2×A2) < 0.1.

[0024] The step of controlling the heating temperature differently according to different regions of the semiconductor substrate to be processed may include the step of defining a plurality of heating regions with different radial distances from the center of the semiconductor substrate to be processed. The heating temperatures of at least two of the plurality of heating regions may be different from each other.

[0025] The step of controlling the heating temperature differently according to different regions of the semiconductor substrate to be processed may include defining a plurality of heating regions arranged parallel to each other along a second direction perpendicular to the first direction between the two ends of a first direction of the semiconductor substrate to be processed. The heating temperatures of at least two of the plurality of heating regions may be different from each other.

[0026] The step of controlling the heating temperature differently according to different regions of the semiconductor substrate to be processed may include the step of defining a plurality of partial heating regions and a remaining heating region other than these partial heating regions in the semiconductor substrate to be processed. The heating temperature of at least one of the plurality of partial heating regions may be controlled to be different from the heating temperature of the remaining heating regions.

[0027] According to other embodiments of the present invention, a laser annealing method is provided, comprising: the step of heating a semiconductor substrate to be processed using the aforementioned heating method; and the step of irradiating the semiconductor substrate to be processed heated by the heating method with a laser for annealing.

[0028] Compared with the advantages of prior art, according to embodiments of the present invention, a heating apparatus / method that can improve the uniformity of annealing (heat treatment) temperature and a laser annealing apparatus / method using the same can be realized by annealing a semiconductor workpiece (i.e., a semiconductor substrate) with a laser. For example, by compensating for the laser energy density in the semiconductor workpiece by controlling the heating temperature differently according to the region of the semiconductor workpiece in a prescribed manner, the temperature distribution of the semiconductor workpiece can be improved during laser annealing.

[0029] When using the heating device / method and laser annealing device / method of the present invention, the performance and uniformity of semiconductor components / electronic components can be improved, and the yield and productivity of products can be increased.

[0030] However, the effects of the present invention are not limited to the effects described, but can be expanded in various ways without departing from the technical concept and field of the present invention.

Implementation Method

[0041] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0042] The embodiments of the present invention described below are provided only to more clearly illustrate the present invention to those skilled in the art to which the present invention pertains. The scope of the present invention is not limited to the following embodiments, and the following embodiments can be modified into many other forms.

[0043] The terminology used in this specification is for illustrative purposes of specific embodiments and is not intended to limit the invention. Unless the context clearly indicates otherwise, the singular form of the term used in this specification may include the plural form. Furthermore, the terms "comprise" and / or "comprising" as used in this specification refer to the presence of a specific shape, step, number, operation, component, element, and / or combination thereof, and do not exclude the presence or addition of more than one other shape, step, number, operation, component, element, and / or combination thereof. Moreover, the term "connection" as used in this specification refers not only to a direct connection between certain components but also includes the concept of indirect connections between components that also involve other components.

[0044] Furthermore, in this specification, when it is mentioned that a component is located "on" other components, it refers not only to the situation where the component is in contact with other components, but also to the situation where other components are present between the two components. The term "and / or" used in this specification includes one or more combinations of the listed related items. Moreover, terms indicating degree, such as "about" and "substantially," used in this specification are used in a range of values ​​or degrees, or close to their meaning, taking into account inherent manufacturing and material acceptable errors, to prevent infringers from unfairly using the correct or absolute values ​​provided to aid in understanding this application.

[0045] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. For clarity and ease of explanation, the dimensions or thicknesses of the areas or portions shown in the drawings may be appropriately exaggerated. Throughout the detailed description, the same reference numerals denote the same structural elements.

[0046] FIG1 is an embodiment of the present invention, which is a perspective view illustrating a heating device HT10 for heating a semiconductor substrate to be processed in a laser annealing process using a laser.

[0047] Referring to FIG1, the heating device HT10 of an embodiment of the present invention can be a device for heating a semiconductor substrate (not shown) in a laser annealing process using a laser.

[0048] For example, the semiconductor substrate to be processed can be a substrate or wafer for forming semiconductor elements (electronic components) such as transistors, contacts, capacitors, memory cell arrays, pixel arrays, or driving circuits. The semiconductor substrate to be processed can include a semiconductor substrate or an insulating substrate, or, depending on the situation, a conductive substrate. Furthermore, the semiconductor substrate to be processed can also include a defined thin film formed on the substrate (substrate), or a component portion including the thin film. As a non-limiting example, the semiconductor substrate can contain at least one of a variety of semiconductor materials composed of Si, Ge, SiGe, SiC, GaN, GaAs, etc. The thin film can include at least one of a semiconductor thin film, an insulating thin film, and a conductive thin film. The semiconductor thin film can contain a variety of semiconductor materials including amorphous silicon and polycrystalline silicon. The insulating thin film (insulator layer) can be made of ceramic material. The insulating thin film can contain silicon oxide, silicon nitride, silicon nitride, high-k materials with a dielectric constant higher than that of silicon nitride, etc. The conductive thin film may contain at least one of, for example, a metal or a metal oxide. As a non-limiting example, the element portion may include switching elements such as transistors or diodes, or storage elements such as storage nodes, capacitors, or resistive switching layers. Furthermore, the semiconductor substrate to be processed may include a wafer or have a wafer shape.

[0049] The heating device HT10 can be disposed within the stepped portion ST10 where the semiconductor substrate to be processed is placed (loaded). That is, the stepped portion ST10 can be configured to include the heating device HT10. The stepped portion ST10 can generally have a circular disk structure or a similar structure. In other embodiments, when the stepped portion ST10 has an inline structure, it can also have a structure that expands in a predetermined direction in order to process the continuously transferred semiconductor substrate. The stepped portion ST10 can include the heating device HT10 at its center and can include a surrounding portion P10 around the heating device HT10 in a manner that surrounds the heating device HT10. When viewed from above, the heating device HT10 can have a circular structure or a similar structure. In one embodiment, the upper surface of the heating device HT10 can be recessed to a lower degree than the surrounding portion P10, and the semiconductor substrate to be processed (not shown) can be placed on the recessed upper surface of the heating device HT10. A heat insulation member N10 can be provided between the heating device HT10 and the surrounding portion P10. In one embodiment, when viewed from above, the heat insulation member N10 may have a ring shape surrounding the heating device HT10. The specific configuration, structure, and shape of the heating device HT10 and its stepped portion ST10 shown in FIG1 are merely examples and may vary depending on the circumstances.

[0050] According to an embodiment of the present invention, the heating device HT10 can be configured to heat the semiconductor substrate to be processed mounted thereon and control the heating temperature differently depending on the region of the semiconductor substrate to be processed. That is, the heating device HT10 can be configured to heat multiple regions of the semiconductor substrate to be processed at different temperatures. The heating device HT10 can be configured to control the temperature of regions in the semiconductor substrate to be processed with relatively low laser energy density (hereinafter referred to as "laser energy density") to be higher than the temperature of regions with relatively high laser energy density.

[0051] During laser annealing, temperature non-uniformity occurring in the semiconductor substrate (substrate to be processed) can induce various problems in the manufacturing characteristics of the device. Due to the limitations and imperfections of the laser optical system (light source), the laser beam size varies with the distance to the semiconductor substrate after laser beam shaping, resulting in variations in energy density. For example, the size of the laser beam in the defocused region increases, and the energy density decreases. The energy density and intensity characteristics of the irradiated laser vary depending on the region of the semiconductor substrate. Therefore, during the laser annealing process, undesirable temperature distribution (i.e., non-uniform heat treatment temperature) occurs in the semiconductor substrate, which can induce problems such as reduced performance and yield of semiconductor / electronic components.

[0052] In an embodiment of the present invention, the heating device HT10 can be configured to control the temperature of a region with relatively low laser energy density in the semiconductor substrate to be processed to be higher than the temperature of a region with relatively high laser energy density. The laser absorptivity (i.e., laser beam absorptivity) varies with the temperature of a specified region of the semiconductor substrate to be processed. Herein, the laser absorptivity refers to the absorption coefficient. The laser absorptivity increases with increasing temperature in a specified region of the semiconductor substrate to be processed. Therefore, by controlling the temperature of a region with relatively low laser energy density in the semiconductor substrate to be processed to be higher than the temperature of a region with relatively high laser energy density, the laser absorptivity in the region with relatively low laser energy density can be increased, thereby improving temperature distribution. That is, by compensating for the difference in laser energy density in the semiconductor substrate by controlling the heating temperature differently according to different regions of the semiconductor substrate in this manner, the temperature distribution of the semiconductor substrate to be processed can be improved during laser annealing, and the uniformity of the annealing (heat treatment) temperature can be improved. According to the embodiments of the present invention described above, the performance and uniformity of semiconductor / electronic components can be improved, and the yield and productivity of products can be increased.

[0053] According to one embodiment, the heating device HT10 can control the heating temperature differently according to different regions of the semiconductor substrate to be processed, such that the laser energy density d1 and laser absorptivity a1 of the region with relatively low laser energy density and the laser energy density d2 and laser absorptivity a2 of the region with relatively high laser energy density in the semiconductor substrate to be processed satisfy the mathematical formula -0.1 < [(d2×a2)-(d1×a1)] / (d2×a2) < 0.1. In this case, the difference between the product of the laser energy density d1 and the laser absorptivity a1 and the product of the laser energy density d2 and the laser absorptivity a2, based on either of the two values, can be approximately within ±10%. Alternatively, the heating device HT10 can control the heating temperature differently depending on the region of the semiconductor substrate to be processed, such that the laser energy density d1 and laser absorptivity a1 and the laser energy density d2 and laser absorptivity a2 in the semiconductor substrate to be processed satisfy the mathematical formula -0.05 < [(d2×a2)-(d1×a1)] / (d2×a2) < 0.05. In this case, the difference between the product of the laser energy density d1 and the laser absorptivity a1 and the product of the laser energy density d2 and the laser absorptivity a2, based on either of the two values, can be approximately within ±5%. When these conditions are met, it is beneficial to improve the uniformity of the annealing (heat treatment) temperature in the semiconductor substrate to be processed.

[0054] According to one embodiment, the heating device HT10 can control the heating temperature differently according to different regions of the semiconductor substrate to be processed, such that the laser energy density D1 and laser absorptivity A1 of the region with the lowest laser energy density and the laser energy density D2 and laser absorptivity A2 of the region with the highest laser energy density in the semiconductor substrate to be processed satisfy the mathematical formula -0.1 < [(D2×A2)-(D1×A1)] / (D2×A2) < 0.1. In this case, the difference between the product of the laser energy density D1 and the laser absorptivity A1 and the product of the laser energy density D2 and the laser absorptivity A2, based on either of the two values, can be approximately within ±10%. Alternatively, the heating device HT10 can control the heating temperature differently depending on the region of the semiconductor substrate to be processed, such that the laser energy density D1 and laser absorptivity A1, and the laser energy density D2 and laser absorptivity A2 in the semiconductor substrate to be processed satisfy the mathematical formula -0.05 < [(D2×A2)-(D1×A1)] / (D2×A2) < 0.05. In this case, the difference between the product of the laser energy density D1 and the laser absorptivity A1 and the product of the laser energy density D2 and the laser absorptivity A2, based on either of the two values, can be approximately within ±5%. When these conditions are met, it is beneficial to improve the uniformity of the annealing (heat treatment) temperature in the semiconductor substrate to be processed.

[0055] According to one embodiment, the heating device HT10 can be a heater utilizing a coil. The heating device HT10 can be configured such that the number and density of coil windings vary depending on the region. The heating device HT10 can be divided into multiple regions, and the number or density of coil windings in at least two of the multiple regions can be different. The heating temperature can vary depending on the number or density of coil windings. Furthermore, the heating device HT10 can be divided into multiple regions as needed, and these multiple regions can be independently controlled (driven). The heating temperature of each region can vary depending on the amount or current density of the current flowing through each region of the heating device HT10. That is, the heating temperature can vary depending on the amount or current density of the current flowing through the coil of the corresponding region of the heating device HT10. However, the specific heating structure, heating principle, temperature control principle, etc., of the heating device HT10 are not limited to the foregoing and can vary in various ways.

[0056] Figure 2 is a plan view illustrating the structure and heating temperature distribution of a heating device according to an embodiment of the present invention.

[0057] Referring to FIG2, the heating device HT11 of this embodiment may include a plurality of heating regions R11 at different radial distances from its center. The heating region R11 located at the center of the plurality of heating regions R11 may be circular, while the remaining heating regions R11 may be annular. The (n+1)th heating region R11 may have a structure that surrounds the nth heating region R11. Furthermore, the nth heating region R11 may be located between the (n-1)th heating region R11 and the (n+1)th heating region R11.

[0058] The heating temperatures of at least two of the multiple heating zones R11 may be different from each other. The heating temperatures of the multiple heating zones R11 may all be different. Alternatively, the heating temperatures of some of the multiple heating zones R11 may be the same.

[0059] As a non-limiting example, the heating temperature of the heating zone R11 of the heating device HT11 may gradually increase from the center of the heating device HT11 outwards or have an increasing tendency. The heating device HT11 may be called a temperature gradient heater. However, the heating temperature distribution of the multiple heating zones R11 is not limited to the foregoing and may vary depending on the needs.

[0060] Figure 3 is a plan view illustrating the structure and heating temperature distribution of a heating device according to another embodiment of the present invention.

[0061] Referring to Figure 3, the heating device HT12 of this embodiment may include a plurality of heating regions R12 arranged parallel to each other along a second direction perpendicular to the first direction between its two ends along the first direction. The first direction may be the X-axis direction, and the second direction may be the Y-axis direction. The plurality of heating regions R12 may be neatly arranged along the Y-axis direction and may be in contact with each other along the X-axis direction. A heating region R12 may be provided that longitudinally cuts through the center of the heating device HT12 along the Y-axis direction, and other heating regions R12 may be provided on both sides thereof.

[0062] The heating temperatures of at least two of the plurality of heating regions R12 may be different from each other. The heating temperatures of a portion of the plurality of heating regions R12 may also be the same. According to one embodiment, when viewed from above, the plurality of heating regions R12 may have a symmetrical heating temperature distribution. That is, the heating temperature distribution can be symmetrical on both sides of the heating region R12 that longitudinally cuts through the center of the heating device HT12 along the Y-axis direction.

[0063] As a non-limiting example, the heating temperature of the heating zone R12 of the heating device HT12 may gradually increase from the center of the heating device HT12 outwards or have an increasing tendency. The heating device HT12 may be referred to as a temperature gradient heater. However, the heating temperature distribution of the multiple heating zones R12 is not limited to the foregoing and may vary depending on the needs.

[0064] Figure 4 is a plan view illustrating the structure and heating temperature distribution of a heating device according to another embodiment of the present invention.

[0065] Referring to Figure 4, the heating device HT13 of this embodiment may include a plurality of heating regions R13 arranged parallel to each other along a second direction perpendicular to the first direction between its two ends along the first direction. The first direction may be the Y-axis direction, and the second direction may be the X-axis direction. The plurality of heating regions R13 may be neatly arranged along the X-axis direction and may be in contact with each other along the Y-axis direction. A heating region R13 may be provided that longitudinally cuts through the center of the heating device HT13 along the X-axis direction, and other heating regions R13 may be provided on both sides thereof.

[0066] The heating temperatures of at least two heating regions R12 among the plurality of heating regions R13 may be different from each other. The heating temperatures of some of the heating regions R13 may also be the same. According to one embodiment, when viewed from above, the plurality of heating regions R13 may have a vertically symmetrical heating temperature distribution. That is, the heating temperature distribution can be symmetrical on both sides of the heating region R13 that longitudinally cuts through the center of the heating device HT13 along the X-axis direction.

[0067] As a non-limiting example, the heating temperature of the heating zone R13 of the heating device HT13 may gradually increase from the center of the heating device HT13 outwards or have an increasing tendency. The heating device HT13 may be referred to as a temperature gradient heater. However, the heating temperature distribution of the multiple heating zones R13 is not limited to the foregoing and may vary depending on the needs.

[0068] Figure 5 is a plan view illustrating the structure and heating temperature distribution of a heating device according to another embodiment of the present invention.

[0069] Referring to FIG5, the heating device HT14 of this embodiment may include a plurality of heating regions R14 arranged in the same or similar manner as described in FIG3. The heating temperatures of at least two of the plurality of heating regions R14 may be different from each other. The heating temperatures of some of the plurality of heating regions R14 may also be the same. The heating temperatures of regions ⓐ, ⓑ, ⓒ, ⓓ, ⓔ, ⓕ, and ⓖ of the plurality of heating regions R14 can be controlled in any manner. The heating temperatures of regions ⓐ, ⓑ, ⓒ, ⓓ, ⓔ, ⓕ, and ⓖ can be controlled independently. According to one embodiment, when viewed from above, the plurality of heating regions R14 may have a left-right asymmetrical heating temperature distribution.

[0070] Figure 6 is a plan view illustrating the structure and heating temperature distribution of a heating device according to another embodiment of the present invention.

[0071] Referring to FIG6, the heating device HT15 of this embodiment may include a plurality of heating regions R15 arranged in the same or similar manner as described in FIG4. The heating temperatures of at least two of the plurality of heating regions R15 may be different from each other. The heating temperatures of some of the plurality of heating regions R15 may also be the same. The heating temperatures of regions ⓐ, ⓑ, ⓒ, ⓓ, ⓔ, ⓕ, and ⓖ of the plurality of heating regions R15 can be controlled in any manner. The heating temperatures of regions ⓐ, ⓑ, ⓒ, ⓓ, ⓔ, ⓕ, and ⓖ can be controlled independently. According to one embodiment, when viewed from above, the plurality of heating regions R15 may have an asymmetrical heating temperature distribution.

[0072] In Figures 2 to 6, the number and size of the multiple heating zones R11 to R15 are only examples and can vary in many ways depending on the situation.

[0073] Figure 7 is a plan view illustrating the structure and heating temperature distribution of a heating device according to another embodiment of the present invention.

[0074] Referring to FIG7, the heating device HT16 of this embodiment may include multiple partial heating areas R16 and remaining heating areas R26 other than these partial heating areas. The multiple partial heating areas R16 may be disposed in any area of ​​the heating device HT16. The multiple partial heating areas R16 may be disposed apart from each other or adjacent to each other. The multiple partial heating areas R16 may have any shape, such as circular, elliptical, polygonal or otherwise.

[0075] The heating temperature of at least one of the multiple partial heating regions R16 can be controlled to be different from the heating temperature of the remaining heating region R26. The heating temperature of at least one of the multiple partial heating regions R16 can be higher or lower than the heating temperature of the remaining heating region R26. The heating temperatures of at least two of the multiple partial heating regions R16 can be different or the same. The number, size, shape, and arrangement (position) of the multiple partial heating regions R16 shown in Figure 7 are only examples and can vary depending on the circumstances.

[0076] Figures 2 to 7 illustrate, illustratively, multiple heating zones and heating temperature distributions applicable to the heating device; however, embodiments of the present invention are not limited thereto and may vary. Depending on the circumstances, at least two embodiments illustrated with reference to Figures 2 to 7 may be mixed in a suitable manner. For example, a portion of any one embodiment of Figures 2 to 7 may be mixed with a portion of another embodiment.

[0077] According to one embodiment of the present invention, in the heating temperature distribution through the heating device, the center temperature range can be approximately 30°C to 1000°C. For example, in the heating temperature distribution through the heating device, the center temperature range can be approximately 50°C to 700°C. The center temperature can be the average temperature in the heating temperature distribution. A portion of the multiple heating regions included in the heating device can remain at room temperature (e.g., 25°C) without being heated during the laser annealing process.

[0078] According to one embodiment of the present invention, in the heating temperature distribution through the heating device, the difference between the lowest temperature and the highest temperature can be approximately 500°C or less. For example, in the heating temperature distribution through the heating device, the difference between the lowest temperature and the highest temperature can be approximately 400°C or less or 300°C or less. In the heating temperature distribution through the heating device, the difference between the lowest temperature and the highest temperature can be greater than 0°C.

[0079] According to an embodiment of the present invention, a laser annealing apparatus can be provided, comprising: a heating device; and a laser irradiation device for irradiating a semiconductor substrate to be processed mounted on the heating device with laser light for annealing. The heating device may be the heating device shown in the embodiments of the present invention, for example, having the characteristics and structure described with reference to Figures 1 to 7. The laser irradiation device can irradiate the semiconductor substrate to be processed with laser light in a scanning or stepping manner. When the laser irradiation device is a scanning device, the laser irradiation device may include: a laser generator; and a laser scanner for irradiating the semiconductor substrate to be processed with laser light generated in the laser generator. Furthermore, when the laser irradiation device is a scanning device, the laser irradiation device can scan the semiconductor substrate to be processed with laser light in a vector scan or raster scan manner.

[0080] For example, the laser used in embodiments of the present invention can be any of ultraviolet ray, visible ray, infrared ray, and microwave. As a non-limiting example, the laser can be a laser (laser beam) generated from any of a yttrium aluminum garnet (YAG) laser generator, a CO2 laser generator, a diode laser generator, and a fiber laser generator. For example, the wavelength of the laser can be approximately 0.01 μm to 11 μm. However, the specific type and wavelength range of the laser are merely illustrative and can vary depending on the circumstances. On the other hand, the laser (laser beam) irradiating the semiconductor substrate can have a spot shape or a line shape on the surface of the semiconductor substrate.

[0081] FIG8 is a cross-sectional view illustrating a laser annealing apparatus according to an embodiment of the present invention.

[0082] Referring to FIG8, a laser annealing apparatus according to an embodiment of the present invention may include a laser generator 10 and a laser scanner, wherein the laser scanner may include a polygon mirror 20 and an optical system 30. In this case, the laser scanner may be a polygon scanner.

[0083] The laser (laser beam) L1 generated in the laser generator 10 can irradiate the semiconductor substrate S10 through the polyhedral mirror 20 and the optical system 30. The semiconductor substrate S10 can be mounted (placed) on the heating device 110. The heating device 110 can be the heating device of the embodiment of the present invention, for example, it can have the characteristics and structure described with reference to Figures 1 to 7. The heating device 110 can be disposed in the step portion 210 or combined with the step portion 210. As the polyhedral mirror 20 rotates, the laser L1 can be scanned. The position of the step portion 210 can be moved as needed. However, the structure of the laser annealing device described with reference to Figure 8 is only an example and can have various modifications.

[0084] FIG9 is a perspective view illustrating another embodiment of the laser annealing apparatus of the present invention.

[0085] Referring to FIG9, the laser annealing apparatus of this embodiment may include a laser generator 15 and a laser scanner. The laser scanner may include a first driving unit 25, a first reflector 35, a second driving unit 45, a second reflector 55, and an optical system 65. In this case, the laser scanner may be a galvanometer scanner.

[0086] The first reflector 35 is connected to the first drive unit 25 and can be rotated via the first drive unit 25. The first reflector 35 can rotate about a first axis. The second reflector 55 is connected to the second drive unit 45 and can be rotated via the second drive unit 45. The second reflector 55 can rotate about a second axis. The second axis can be perpendicular to the first axis. The first drive unit 25 may include a first motor, and the second drive unit 45 may include a second motor. The first drive unit 25 may be a first galvanometer, and the second drive unit 45 may be a second galvanometer.

[0087] The laser (laser beam) L1 generated in the laser generator 15 can irradiate the semiconductor substrate S20 through the first reflector 35, the second reflector 55, and the optical system 65. The semiconductor substrate S20 can be mounted (placed) on a heating device (not shown). The heating device can be the heating device of the embodiment of the present invention, for example, it can have the characteristics and structure described with reference to Figures 1 to 7. The heating device can be disposed in the step portion 220 or combined with the step portion 220. As the first reflector 35 and the second reflector 55 rotate, the laser L1 can be scanned. The position of the step portion 220 can be moved as needed. However, the structure of the laser annealing device described with reference to Figure 9 is only an example and can be modified in many ways. Furthermore, the laser annealing device of the scanning method is illustrated and explained in Figures 8 and 9, but the embodiments of the present invention are not limited thereto and can be modified in many ways.

[0088] According to an embodiment of the present invention, a heating method is provided as a heating method for heating a semiconductor substrate to be processed in a laser annealing process utilizing a laser, comprising the step of controlling the heating temperature differently according to different regions of the semiconductor substrate to be processed during the heating of the semiconductor substrate to be processed. The step of controlling the heating temperature differently according to different regions of the semiconductor substrate to be processed includes controlling the temperature of a region of the semiconductor substrate to be processed with a relatively low laser energy density (hereinafter referred to as "laser energy density") to be higher than the temperature of a region with a relatively high laser energy density.

[0089] According to one embodiment, the heating method can control the heating temperature differently according to different regions of the semiconductor substrate to be processed, such that the laser energy density d1 and laser absorptivity a1 of the region with relatively low laser energy density and the laser energy density d2 and laser absorptivity a2 of the region with relatively high laser energy density in the semiconductor substrate to be processed satisfy the mathematical formula -0.1 < [(d2×a2)-(d1×a1)] / (d2×a2) < 0.1. The heating method can control the heating temperature differently according to different regions of the semiconductor substrate to be processed, such that the laser energy density d1 and laser absorptivity a1 of the region with relatively low laser energy density and the laser energy density d2 and laser absorptivity a2 of the region with relatively high laser energy density in the semiconductor substrate to be processed satisfy the mathematical formula -0.05 < [(d2×a2)-(d1×a1)] / (d2×a2) < 0.05.

[0090] According to one embodiment, the heating method can control the heating temperature differently according to different regions of the semiconductor substrate to be processed, such that the laser energy density D1 and laser absorptivity A1 of the region with the lowest laser energy density and the laser energy density D2 and laser absorptivity A2 of the region with the highest laser energy density in the semiconductor substrate to be processed satisfy the mathematical formula -0.1 < [(D2×A2)-(D1×A1)] / (D2×A2) < 0.1. The heating method can control the heating temperature differently according to different regions of the semiconductor substrate to be processed, such that the laser energy density D1 and laser absorptivity A1 of the region with the lowest laser energy density and the laser energy density D2 and laser absorptivity A2 of the region with the highest laser energy density in the semiconductor substrate to be processed satisfy the mathematical formula -0.05 < [(D2×A2)-(D1×A1)] / (D2×A2) < 0.05.

[0091] According to one embodiment, the step of controlling the heating temperature differently according to different regions of the semiconductor substrate to be processed may include defining a plurality of heating regions with different radial distances from the center of the semiconductor substrate to be processed, wherein the heating temperatures of at least two of the plurality of heating regions may be different from each other. This is the same as that described with reference to FIG2.

[0092] According to one embodiment, the step of controlling the heating temperature differently according to different regions of the semiconductor substrate to be processed may include defining a plurality of heating regions arranged parallel to each other along a second direction perpendicular to the first direction between the two ends of a first direction of the semiconductor substrate to be processed. The heating temperatures of at least two of the plurality of heating regions may be different from each other. This is the same as described with reference to Figures 3 to 6.

[0093] According to one embodiment, the step of controlling the heating temperature differently according to different regions of the semiconductor substrate to be processed may include the step of defining a plurality of partial heating regions and a remaining heating region other than these partial heating regions in the semiconductor substrate to be processed. The heating temperature of at least one of the plurality of partial heating regions may be controlled to be different from the heating temperature of the remaining heating regions. This is the same as described with reference to FIG7.

[0094] Furthermore, the heating method of the embodiment can be applied to all features and variations described with reference to Figures 1 to 7.

[0095] According to an embodiment of the present invention, a laser annealing method is provided, comprising: a step of heating a semiconductor substrate to be processed using the above-described heating method; and a step of irradiating the semiconductor substrate to be processed heated by the heating method with a laser for annealing. The laser annealing method may incorporate features of the laser annealing apparatus of the embodiments of the present invention.

[0096] FIG10 is a perspective view illustrating a method for manufacturing a semiconductor element using a laser annealing apparatus and method according to an embodiment of the present invention.

[0097] Referring to FIG10, a plurality of elements D10 can be formed from the annealed substrate structure S100. The plurality of elements D10 can be semiconductor elements (electronic elements). Elements D10 can be storage elements or non-storage elements.

[0098] According to the embodiments of the present invention described above, during the annealing of a semiconductor workpiece (i.e., a semiconductor substrate) using a laser, a heating apparatus / method capable of improving the uniformity of the annealing (heat treatment) temperature, and a laser annealing apparatus / method applying the same, can be realized. For example, by controlling the heating temperature differently according to regions of the semiconductor workpiece in a predetermined manner to compensate for differences in laser energy density within the semiconductor workpiece, the temperature distribution of the semiconductor workpiece can be improved during laser annealing. When using the heating apparatus / method and laser annealing apparatus / method of the embodiments of the present invention, the performance and uniformity of semiconductor elements / electronic components can be improved, and the yield and productivity of products can be increased.

[0099] This specification discloses preferred embodiments of the present invention, wherein specific terminology is used, but this is used only in a general sense to facilitate the explanation of the technical content of the invention and to aid in the understanding of the invention, and is not intended to limit the scope of the invention. It should be apparent to those skilled in the art that other modifications based on the technical concept of the present invention may occur at any time, in addition to the embodiments disclosed herein. Those skilled in the art will recognize that, without departing from the technical concept of the present invention, various substitutions, modifications, and variations can be made to the heating apparatus and method for heating a semiconductor substrate to be processed in a laser annealing process, the laser annealing apparatus and method applying thereto, and the semiconductor device manufacturing apparatus and method of the embodiments described with reference to FIGS. 1 to 10. Therefore, the scope of the present invention should not be determined by the embodiments, but by the technical concept described in the claims of the present invention. [Simplified Explanation of the Diagram]

[0031] FIG1 is a perspective view illustrating a heating apparatus for heating a semiconductor substrate in a laser annealing process using a laser, according to an embodiment of the present invention.

[0032] Figure 2 is a plan view illustrating the structure and heating temperature distribution of a heating device according to an embodiment of the present invention.

[0033] Figure 3 is a plan view illustrating the structure and heating temperature distribution of a heating device according to another embodiment of the present invention.

[0034] Figure 4 is a plan view illustrating the structure and heating temperature distribution of a heating device according to another embodiment of the present invention.

[0035] Figure 5 is a plan view illustrating the structure and heating temperature distribution of a heating device according to another embodiment of the present invention.

[0036] Figure 6 is a plan view illustrating the structure and heating temperature distribution of a heating device according to another embodiment of the present invention.

[0037] Figure 7 is a plan view illustrating the structure and heating temperature distribution of a heating device according to another embodiment of the present invention.

[0038] FIG8 is a cross-sectional view illustrating a laser annealing apparatus according to an embodiment of the present invention.

[0039] FIG9 is a perspective view illustrating another embodiment of the laser annealing apparatus of the present invention.

[0040] FIG10 is a perspective view illustrating a method for manufacturing a semiconductor element using a laser annealing apparatus and method according to an embodiment of the present invention.

Claims

1. A heating apparatus for heating a semiconductor substrate in a laser annealing process, wherein, The heating device is configured to heat the semiconductor substrate to be processed mounted thereon and control the heating temperature differently according to different regions of the semiconductor substrate to be processed, and is configured to control the temperature of the region of the semiconductor substrate to be processed with relatively low laser energy density (hereinafter referred to as "laser energy density") to be higher than the temperature of the region with relatively high laser energy density.

2. The heating apparatus of claim 1 for heating a semiconductor substrate to be processed in a laser annealing process, wherein, The heating device controls the heating temperature differently according to different regions of the semiconductor substrate to be processed, so that the laser energy density d1 and laser absorptivity a1 of the region with relatively low laser energy density and the laser energy density d2 and laser absorptivity a2 of the region with relatively high laser energy density in the semiconductor substrate to be processed satisfy the mathematical formula -0.1 < [(d2×a2)-(d1×a1)] / (d2×a2) < 0.

1.

3. The heating apparatus of claim 1 for heating a semiconductor substrate to be processed in a laser annealing process, wherein, The heating device controls the heating temperature differently according to different regions of the semiconductor substrate to be processed, so that the laser energy density D1 and laser absorptivity A1 of the region with the lowest laser energy density and the laser energy density D2 and laser absorptivity A2 of the region with the highest laser energy density in the semiconductor substrate to be processed satisfy the mathematical formula -0.1 < [(D2×A2)-(D1×A1)] / (D2×A2) < 0.

1.

4. The heating apparatus of claim 1 for heating a semiconductor substrate to be processed in a laser annealing process, wherein the heating apparatus includes a plurality of heating regions at different radial distances from its center, and at least two of the plurality of heating regions have different heating temperatures.

5. The heating apparatus of claim 1 for heating a semiconductor substrate to be processed in a laser annealing process, wherein the heating apparatus includes a plurality of heating regions arranged parallel to each other along a second direction perpendicular to the first direction between its two ends along a first direction, and at least two of the plurality of heating regions have different heating temperatures.

6. The heating apparatus of claim 5 for heating a semiconductor substrate to be processed in a laser annealing process, wherein, when viewed from above, the plurality of heating regions have a left-right or up-down symmetrical heating temperature distribution.

7. The heating apparatus of claim 5 for heating a semiconductor substrate to be processed in a laser annealing process, wherein, when viewed from above, the plurality of heating regions have a left-right or up-down asymmetrical heating temperature distribution.

8. The heating apparatus of claim 1 for heating a semiconductor substrate to be processed in a laser annealing process, wherein the heating apparatus includes a plurality of partial heating regions and a remaining heating region other than the partial heating regions, wherein the heating temperature of at least one of the plurality of partial heating regions is controlled to be different from the heating temperature of the remaining heating region.

9. The heating apparatus of claim 1 for heating a semiconductor substrate to be processed in a laser annealing process, wherein the center temperature ranges from 30°C to 1000°C in the heating temperature distribution through the heating apparatus.

10. The heating apparatus of claim 1 for heating a semiconductor substrate to be processed in a laser annealing process, wherein the difference between the lowest and highest temperatures in the heating temperature distribution through the heating apparatus is less than 500°C.

11. A laser annealing apparatus, comprising: Heating apparatus for heating a semiconductor substrate to be processed in a laser annealing process, according to any one of claims 1 to 10. And a laser irradiation device, which irradiates a semiconductor substrate to be processed, mounted on the heating device, with a laser for annealing.

12. The laser annealing apparatus of claim 11, wherein the laser irradiation apparatus is configured to irradiate the semiconductor substrate to be processed with laser in a scanning or stepper manner.

13. The laser annealing apparatus of claim 11, wherein the laser irradiation apparatus comprises: Laser generator; And a laser scanner for irradiating the semiconductor substrate to be processed with the laser generated in the laser generator.

14. A heating method for heating a semiconductor substrate in a laser annealing process, comprising the steps of heating the semiconductor substrate and controlling the heating temperature differently depending on the region of the semiconductor substrate, wherein the step of controlling the heating temperature differently depending on the region of the semiconductor substrate includes controlling the temperature of a region of the semiconductor substrate with a relatively low laser energy density (hereinafter referred to as "laser energy density") to be higher than the temperature of a region with a relatively high laser energy density.

15. The heating method of claim 14 for heating a semiconductor substrate to be processed in a laser annealing process, wherein the heating temperature is controlled differently according to different regions of the semiconductor substrate to be processed, such that the laser energy density d1 and laser absorptivity a1 of the region with relatively low laser energy density and the laser energy density d2 and laser absorptivity a2 of the region with relatively high laser energy density in the semiconductor substrate to be processed satisfy the mathematical expression -0.1 < [(d2×a2)-(d1×a1)] / (d2×a2) < 0.

1.

16. The heating method of claim 14 for heating a semiconductor substrate to be processed in a laser annealing process, wherein the heating temperature is controlled differently according to different regions of the semiconductor substrate to be processed, such that the laser energy density D1 and laser absorptivity A1 of the region with the lowest laser energy density and the laser energy density D2 and laser absorptivity A2 of the region with the highest laser energy density in the semiconductor substrate to be processed satisfy the mathematical expression -0.1 < [(D2×A2)-(D1×A1)] / (D2×A2) < 0.

1.

17. The heating method for heating a semiconductor substrate to be processed in a laser annealing process, as claimed in claim 14, wherein the step of controlling the heating temperature according to different regions of the semiconductor substrate to be processed includes the step of defining a plurality of heating regions at different radial distances from the center of the semiconductor substrate to be processed, wherein at least two of the plurality of heating regions have different heating temperatures.

18. The heating method of claim 14 for heating a semiconductor substrate to be processed in a laser annealing process, wherein the step of controlling the heating temperature differently according to different regions of the semiconductor substrate to be processed includes the step of defining a plurality of heating regions arranged parallel to each other along a second direction perpendicular to the first direction between two ends of a first direction of the semiconductor substrate to be processed, wherein at least two of the plurality of heating regions have different heating temperatures.

19. The heating method for heating a semiconductor substrate to be processed in a laser annealing process, as claimed in claim 14, wherein the step of controlling the heating temperature differently according to different regions of the semiconductor substrate to be processed includes the step of defining a plurality of partial heating regions and a remaining heating region other than these partial heating regions in the semiconductor substrate to be processed, wherein the heating temperature of at least one of the plurality of partial heating regions is controlled to be different from the heating temperature of the remaining heating region.

20. A laser annealing method, comprising: The steps of heating the semiconductor substrate to be processed using any of the heating methods in claims 14 to 19; The step of irradiating the semiconductor substrate to be processed, heated by the heating method, with a laser for annealing.

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