resin composition

Abstract

This invention provides an interlayer insulation layer for wiring with good insulation reliability, a semiconductor device, and a resin composition preferably forming the interlayer insulation layer. The resin composition contains a curable resin and a curing agent, a compound having a (meth)acrylic group, and the curing agent. The curable resin has at least two maleimine groups, a divalent hydrocarbon group, and a divalent organic group containing at least two amide bonds. The cured resin composition has a moisture absorption rate of less than 1% by mass after being placed at 130°C and 85% relative humidity for 200 hours. The interlayer insulation layer formed by this resin composition exists between adjacent copper wires, suppressing the diffusion of copper from the copper wires into the wiring laminate. Therefore, short circuits between copper wires via diffused copper can be suppressed, resulting in a significant improvement in the insulation reliability of the wiring laminate.

Description

Technical Field

[0001] This disclosure relates to a resin composition, a wiring laminate for semiconductors, and a semiconductor device. Prior Technology

[0002] To achieve high density and high performance in semiconductor packaging, a mounting configuration is proposed that integrates chips with different performance characteristics into a single package. In this case, cost-effective high-density interconnect technology between chips becomes important (see, for example, Patent Document 1).

[0003] Non-Patent Documents 1 and 2 describe a type of stacked package (PoP) where different package layers are connected by flip chip mounting. This PoP is a type that can be widely used in smartphones, tablets, and the like.

[0004] Other proposed forms for mounting multiple wafers at high density include: packaging technology using organic substrates with high-density wiring, fan-out packaging technology with through-mold vias (TMV) (Fan-out-Wafer Level Package (FO-WLP)), packaging technology using silicon or glass interposers, packaging technology using through-silicon vias (TSV), and packaging technology for inter-wafer transfer of wafers embedded in a substrate.

[0005] In particular, when semiconductor wafers are mounted on each other in a semiconductor wiring layer and FO-WLP, there is a need for a fine wiring layer that enables the semiconductor wafers to conduct to each other at a high density (for example, see Patent Document 2). [Existing technical documents] [Patent Literature]

[0006] [Patent Document 1] Japanese Patent Publication No. 2012-529770 [Patent Document 2] U.S. Patent Application Publication No. 2011 / 0221071 [Non-patent literature]

[0007] [Non-Patent Literature 1] Jinseong Kim et al., "Application of Through Mold Via (TMV) as PoP Base Package", Electronic Components and Technology Conference (ECTC), pp. 1089-1092 (2008). [Non-Patent Literature 2] SW Yoon et al., "Advanced Low Profile PoP Solution with Embedded Wafer Level PoP (eWLB-PoP) Technology", ECTC, pp. 1250-1254 (2012) Summary of the Invention

[0008] [The problem that the invention aims to solve] Sometimes, wiring layers (semiconductor wiring layers) are used to mount multiple semiconductor wafers in add-on substrates, wafer-level packaging (WLP), and bottom packaging of fan-out PoP. For example, when fine wirings with a linewidth and space width of less than 5 μm are arranged in this wiring layer, the wirings can be formed using the trench method. The trench method is a method in which a metal layer that will become the wiring is formed in trenches (grooves) on the surface of an organic insulating layer using methods such as plating. Therefore, the shape of the wiring formed on the organic insulating layer is formed along the shape of the trench.

[0009] When forming fine wiring within a wiring layer using the trench method, copper with high conductivity is sometimes used, for example, to reduce costs and suppress the increase in wiring resistance. In the case of forming copper wiring, copper sometimes diffuses within the organic insulating layer. In this case, there is a concern that the copper wiring may short-circuit with each other through the diffused copper, making the insulation reliability of the wiring layer a challenge.

[0010] The purpose of this invention is to provide a wiring interlayer insulation layer and a semiconductor device with good insulation reliability, as well as a resin composition that can preferably form the wiring interlayer insulation layer. [Methods for solving problems]

[0011] One aspect of this invention is a resin composition containing a curable resin and a curing agent, used to form an interlayer insulation layer in contact with copper wiring. If the interlayer insulation layer formed by this resin composition exists between adjacent copper wirings, the diffusion of copper from the copper wirings into the wiring laminate can be suppressed. Therefore, short circuits between copper wirings via diffused copper can be suppressed, resulting in a significant improvement in the insulation reliability of the wiring laminate.

[0012] The curable resin may also have at least two maleimine groups and a divalent hydrocarbon group. The hydrocarbon group may also comprise a chain-like alkyl group with a main chain having 4 or more carbon atoms. The hydrocarbon group may also have 8 or more carbon atoms. The curable resin may also have a divalent organic group containing at least two maleimine bonds. The divalent organic group may also be a group represented by the following formula (I). [Chemistry 1] In the formula, R1 represents a tetravalent organic group.

[0013] The hydrocarbon group can also be the group represented by the following formula (II). [Chemistry 2] In the formula, R2 and R3 independently represent alkyl groups, and R4 and R5 independently represent alkyl groups.

[0014] The hardener may also contain a photoradical polymerization initiator. The resin composition may further contain compounds having (meth)acrylic groups, and may further contain coupling agents.

[0015] The resin composition may further contain thermoplastic resin. The concentration of chloride ions in the cured resin composition may be less than 5 ppm. The elongation at break of the cured resin composition may be 5% to 200%. The storage modulus of elasticity of the cured resin composition at 40°C may be 10 MPa to 5 GPa. The glass transition temperature of the cured resin composition may be 120°C to 240°C. The dielectric constant of the cured resin composition at 10 GHz may be less than 3.0. The dielectric loss tangent of the cured resin composition at 10 GHz may be less than 0.005. The 5% weight loss temperature of the cured resin composition may be 300°C or higher.

[0016] The moisture absorption rate of the cured resin composition after being placed at 130°C and 85% relative humidity for 200 hours can also be less than 1% by mass.

[0017] Another aspect of the present invention is a wiring laminate for semiconductors, comprising: a plurality of wiring layers, including an organic insulating layer, copper wiring disposed within the organic insulating layer, and a barrier metal film separating the copper wiring from the organic insulating layer; and an inter-wiring layer insulating layer disposed between the plurality of wiring layers; a portion of the surface of the copper wiring is exposed on one or two main surfaces of the wiring layers, the inter-wiring layer insulating layer is in contact with the exposed surface of the copper wiring, and the inter-wiring layer insulating layer is a layer with a moisture absorption rate of less than 1% by mass after being placed in an environment of 130°C and 85% relative humidity for 200 hours.

[0018] The interlayer insulation layer may also be a cured form of the resin composition. The organic insulating layer may also be a layer formed from a photosensitive insulating resin. The barrier metal film may also include at least one selected from the group consisting of titanium, nickel, palladium, chromium, tantalum, tungsten, and gold. The dielectric constant of the interlayer insulation layer at 10 GHz may also be 3.0 or less. The dielectric loss tangent of the interlayer insulation layer at 10 GHz may also be 0.005 or less. The 5% weight reduction temperature of the interlayer insulation layer may also be 300°C or higher.

[0019] Another aspect of the present invention is a semiconductor device comprising: a semiconductor wiring laminate; and a semiconductor element electrically connected to a copper wiring. [The effects of the invention]

[0020] According to the present invention, a wiring interlayer insulation layer and a semiconductor device with good insulation reliability can be provided, as well as a resin composition that can preferably form the wiring interlayer insulation layer. Simple Explanation of the Diagram

[0021] Figure 1 is a schematic cross-sectional view of a semiconductor device having one embodiment of a semiconductor wiring stack. Figure 2 is a schematic cross-sectional view of a semiconductor wiring laminate according to an embodiment. Figures 3(a) to 3(c) illustrate the manufacturing method of a wiring laminate for semiconductors. Figures 4(a) to 4(b) illustrate the manufacturing method of a wiring laminate for semiconductors. Figures 5(a) to 5(b) illustrate the manufacturing method of a wiring laminate for semiconductors. Figures 6(a) to 6(b) illustrate the manufacturing method of a wiring laminate for semiconductors. Figures 7(a) to 7(b) illustrate the manufacturing method of a wiring laminate for semiconductors. Figures 8(a) to 8(b) illustrate the manufacturing method of a wiring laminate for semiconductors. Figures 9(a) to 9(b) illustrate the manufacturing method of a wiring laminate for semiconductors. Figures 10(a) to 10(b) illustrate the manufacturing method of a wiring laminate for semiconductors. Figures 11(a) to 11(b) illustrate the manufacturing method of a wiring laminate for semiconductors. Figures 12(a) to 12(b) illustrate the manufacturing method of a wiring laminate for semiconductors. Figures 13(a) to 13(b) illustrate the manufacturing method of a wiring laminate for semiconductors. Figure 14(a) is a plan view of the sample used for evaluation, and Figure 14(b) is a cross-sectional view along line XIVb-XIVb in Figure 14(a). Figure 15 is a graph showing the results of the high acceleration life test of Example 3 and Comparative Example 2. Figure 16(a) shows a photograph of the appearance after the high acceleration life test of Example 3, and Figure 16(b) shows a photograph of the appearance after the high acceleration life test of Comparative Example 2. Implementation

[0022] The present embodiment will now be described in detail with reference to the drawings. In the following description, identical or equivalent parts will be labeled with the same symbols, and repeated descriptions will be omitted. Furthermore, unless otherwise specified, positional relationships such as top, bottom, left, and right are assumed to be based on the positional relationships shown in the drawings. Moreover, the scale of the drawings is not limited to the scale shown.

[0023] When terms such as "left," "right," "front," "back," "upper," "lower," "above," "below," "first," and "second" are used in the descriptions and claims of this specification, these are for illustrative purposes only and do not necessarily refer to the permanent relative positions. Furthermore, when viewed in a plan view, "layer" and "film" include not only structures with shapes forming across the entire surface but also structures with shapes forming on a portion of it. Additionally, the term "step" refers not only to an independent step but also to any step that, even if it cannot be clearly distinguished from others, is included as long as the desired purpose of that step is achieved. Furthermore, the numerical range indicated by "~" represents the range in which the values ​​before and after "~" are the minimum and maximum values, respectively. Moreover, in the numerical ranges described in stages in this specification, the upper or lower limit of a certain stage's numerical range can be replaced by the upper or lower limit of another stage's numerical range.

[0024] One embodiment of the resin composition contains a curable resin and a curing agent. The curable resin is a compound that cures by heat or light. That is, the resin composition is a photocurable (photosensitive) resin composition that cures by light, or a thermocurable resin composition that cures by heat. This resin composition is preferably used to form an interlayer insulation layer in contact with copper wiring. In this specification, copper wiring refers to wiring containing at least copper. Copper wiring may be wiring containing only copper, or it may be wiring containing other components besides copper, such as nickel, titanium, palladium, etc.

[0025] In one embodiment (hereinafter referred to as "the first embodiment"), the curable resin is a maleimine compound having at least two maleimine groups and a divalent hydrocarbon group (hereinafter also simply referred to as "maleimine compound").

[0026] Maleimine compounds, for example, have at least two maleimine groups represented by formula (III) below. [Chemistry 3]

[0027] Maleimine compounds are, for example, compounds represented by the following formula (IV) (bismaleimine compounds). [Chemistry 4] In the formula, X is a divalent linker containing a divalent hydrocarbon group.

[0028] The divalent hydrocarbon group represented by X can be either a saturated or unsaturated hydrocarbon group. The divalent hydrocarbon group can be either chain-like or cyclic; the chain-like divalent hydrocarbon group can be either straight-chain or branched. The cyclic unsaturated hydrocarbon group can also be an aromatic group. The divalent hydrocarbon group can also contain two or more of these groups.

[0029] From the viewpoint of improving the flexibility of the resin composition, as well as the operability (adhesion, cracking, powdering, etc.) and strength of the film made from the resin composition, the divalent hydrocarbon group is preferably a chain-like hydrocarbon group, and more preferably a chain-like alkyl group having a main chain having 4 or more carbon atoms.

[0030] A chain-like alkyl group having a main chain with 4 or more carbon atoms is represented by -(CRaRb)m- (where m represents an integer of 4 or more, and Ra and Rb independently represent hydrogen atoms or alkyl groups with fewer than m carbon atoms). The carbon number (m) of the main chain of the alkyl group is preferably 4 or more or 6 or more, and preferably 20 or less, 15 or less or 10 or less.

[0031] From the viewpoint that it is easy to make the molecular structure of maleimide compounds three-dimensional, thereby increasing the free volume of the polymer and achieving low density, i.e., low dielectric constant, the number of carbons in the divalent hydrocarbon group is preferably 8 or more, 10 or more, or 15 or more, and preferably 300 or less, 250 or less, 200 or less, 100 or less, 70 or less, or 50 or less. From the same viewpoint, the number of carbons in the divalent hydrocarbon group can also preferably be 8 to 300, 8 to 250, 8 to 200, or 8 to 100. The divalent hydrocarbon group preferably has 8 to 300, 8 to 250, 8 to 200, or 8 to 100 carbons and may also be a branched alkyl group, more preferably a branched alkyl group with 10 to 70 carbons, and even more preferably a branched alkyl group with 15 to 50 carbons.

[0032] In one embodiment, from the viewpoint of more effectively improving high-frequency characteristics and resistance to Highly Accelerated Temperature and Humidity Stress Test (HAST), the divalent hydrocarbon group is represented by the group in the following formula (II). [Chemistry 5] In the formula, R2 and R3 independently represent alkyl groups, and R4 and R5 independently represent alkyl groups.

[0033] From the viewpoint of further improving flexibility and ease of synthesis, the number of carbon atoms in the alkyl groups represented by R2 and R3 is preferably 4 to 50, more preferably 5 to 25, further preferably 6 to 10, and especially preferably 7 to 10. The alkyl groups represented by R2 and R3 are preferably chain-like alkyl groups having a main chain with 4 or more carbon atoms.

[0034] From the viewpoint of further improving flexibility and ease of synthesis, the alkyl group represented by R4 preferably has 4 to 50 carbon atoms, more preferably 5 to 25, further preferably 6 to 10, and especially preferably 7 to 10. From the viewpoint of further improving flexibility and ease of synthesis, the alkyl group represented by R5 preferably has 2 to 50 carbon atoms, more preferably 3 to 25, further preferably 4 to 10, and especially preferably 5 to 8.

[0035] From the viewpoint of more effectively improving high-frequency properties and elongation, maleimide compounds preferably have multiple divalent hydrocarbon groups. In this case, the multiple divalent hydrocarbon groups may be the same or different from each other. Maleimide compounds preferably have 2 to 40, more preferably 2 to 20, and even more preferably 2 to 10 divalent hydrocarbon groups.

[0036] Divalent hydrocarbon groups can also be, for example, nonyl, decyl, undecyl, dodecyl, tetradecyl, hexadecyl, octadecyl, nonadecanyl, icosyl, icosyl, icosyl-1-decyl, icosyl-2-decyl, icosyl-2-tridecyl, icosyl-2-tetradecyl, icosyl-2-pentyl, icosyl-2-hexadecyl, icosyl-2-octadecyl, icosyl-2-nonadecanyl, icosyl-3-tridecyl, etc.; benzylene, phenyl, naphthyl, etc.; phenylmethylene, phenylethyl, benzylpropyl, naphthylmethylene, naphthylethyl, etc.; phenyldimethyl, phenyldiethyl, etc., etc.

[0037] The linker group represented by X may contain only the divalent hydrocarbon group, or it may contain other organic groups besides the divalent hydrocarbon group. Other organic groups are, for example, divalent organic groups having at least two amide bonds.

[0038] A divalent organic group having at least two amide bonds may also be, for example, the group represented by the following formula (I). [Chemistry 6] In the formula, R1 represents a tetravalent organic group.

[0039] From an operational point of view, the tetravalent organic group represented by R1 can also be a hydrocarbon group, for example. The number of carbons in this hydrocarbon group can also be, for example, 1 to 100, 2 to 50, or 4 to 30.

[0040] The hydrocarbon group can also be substituted, for example, it can contain substituted or unsubstituted siloxane groups. Examples of siloxane groups include those derived from dimethylsiloxane, methylphenylsiloxane, diphenylsiloxane, etc.

[0041] Substituents may also be alkyl, alkenyl, alkynyl, hydroxyl, alkoxy, mercapto, cycloalkyl, substituted cycloalkyl, heterocyclic, substituted heterocyclic, aryl, substituted aryl, heteroaryl, substituted heteroaryl, aryloxy, substituted aryloxy, halogen atom, haloalkyl, cyano, nitro, nitroso, amino, acetaminophen, -C(O)H, -C(O)-, -S-, -S(O)2-, -OC(O)-O-, -C(O)-NRc, -NRcC(O)-N(Rc)2, -OC(O)-N(Rc)2, acetyl, oxyacetyl, carboxyl, carbamate, sulfonyl, sulfonamide, thioacetyl, etc. Here, Rc represents a hydrogen atom or alkyl group. One or more of these substituents may be selected depending on the purpose and intended use.

[0042] The tetravalent organic group represented by R1 can also be a tetravalent residue of an acid anhydride having two or more anhydride rings in a molecule, that is, a tetravalent group obtained by removing two anhydride groups (-CO(=O)OC(=O)-) from an acid anhydride. Examples of acid anhydrides are compounds described below.

[0043] From the viewpoint of excellent high-frequency characteristics, the organic group represented by R1 is preferably a tetravalent aromatic group, and more preferably a residue obtained by removing two anhydride groups from pyromellitic dianhydride. The divalent organic group having at least two amide bonds is preferably the group represented by the following formula (V). [Chemistry 7]

[0044] From the viewpoint of excellent dielectric properties, a divalent organic group having at least two amide bonds can also be a group represented by formula (VI) or (VII) below. [Chemistry 8] [Chemistry 9]

[0045] From the viewpoint of excellent high-frequency properties and excellent compatibility with other resins, especially high molecular weight thermoplastic elastomer resins, the maleimide compound preferably contains a plurality of divalent organic groups having at least two amide bonds. In this case, the plurality of divalent organic groups may be the same or different from each other. The maleimide compound preferably has 2 to 40, more preferably 2 to 20, and even more preferably 2 to 10 of the divalent organic groups.

[0046] More specifically, the maleimine compound in one embodiment may be, for example, the compound represented by formula (VIII) below, or the compound represented by formula (IX) below. [Chemistry 10] [Chemistry 11] In the formula, Z1, Z2, and Z3 independently represent the divalent hydrocarbon groups, R1 has the same meaning as R1 in formula (I), and n represents an integer from 1 to 10. When n is 2 or more, multiple Z3s can be the same or different.

[0047] Maleimine compounds are available for purchase and use in commercially available products. Examples of commercially available products include BMI-TMH, BMI-1000, BMI-1000H, BMI-1100, BMI-1100H, BMI-2000, BMI-2300, BMI-3000, BMI-3000H, BMI-4000, BMI-5100, BMI-7000, BMI-7000H (all trade names, manufactured by Daiwa Chemical Industries Co., Ltd.), BMI, BMI-70, BMI-80 (all trade names, manufactured by KI Chemical Co., Ltd.), etc., which are maleimine compounds represented by formula (VIII). Commercially available examples include BMI-1500, BMI-1700, BMI-3000, BMI-5000, and BMI-9000 (all trade names, manufactured by Designer Molecules Inc. (DMI)) which are maleimine compounds represented by formula (IX).

[0048] There is no particular limitation on the molecular weight of maleimide compounds. The weight average molecular weight (Mw) of maleimide compounds can be 1000 or more, 1500 or more, or 3000 or more, and can also be 30000 or less, 20000 or less, or 15000 or less. From the viewpoint of solubility in solvents and compatibility with monomers, resins, and other components, the weight average molecular weight (Mw) of maleimide compounds is preferably 1000 to 30000, and more preferably 1500 to 20000.

[0049] The weight-average molecular weight (Mw) of maleimine compounds can be determined using gel permeation chromatography (GPC). The determination conditions for GPC are as follows. Pump: L-6200 type [Manufactured by Hitachi High-Tech Co., Ltd.] Detector: L-3300 RI [Manufactured by Hitachi High-Tech Co., Ltd.] Tube Oven: L-655A-52 [Manufactured by Hitachi High-Tech Co., Ltd.] Protective tubing and tubing: TSK Guard column HHR-L + TSKgel G4000HHR + TSKgel G2000HHR [All manufactured by Tosoh Corporation, trade names] Tubing string dimensions: 6.0 mm × 40 mm (protective tubing string), 7.8 mm × 300 mm (tubing string) Dissolution solution: Tetrahydrofuran Sample concentration: 30 mg / 5 mL Injection volume: 20 μL Measurement temperature: 40℃

[0050] Based on the total amount of solid components in the resin composition, the content of maleic anhydride compounds may be, for example, 50% or more by mass, 65% or more by mass, or 80% or more by mass, and may also be 99% or less by mass, 95% or less by mass, or 90% or less by mass.

[0051] The curing agent in the first embodiment may also contain a photoradical polymerization initiator. That is, the resin composition in one embodiment contains a maleimide compound and a photoradical polymerization initiator.

[0052] Photoradical polymerization initiators can also be, for example, benzyl ketone-based photoradical polymerization initiators, phosphine oxide-based photoradical polymerization initiators, etc.

[0053] Benzyl ketone-based photoradical polymerization initiators, such as those manufactured by BASF (e.g., Irgacure 651, Irgacure 184, DAROCURE 1173, Irgacure 2959, Irgacure 127, DAROCURE MBF, Irgacure 907, Irgacure 369, Irgacure 379EG), can be purchased. Phosphine oxide-based photoradical polymerization initiators, such as those manufactured by BASF (e.g., Irgacure 819, LUCIRIN TPO), can also be purchased.

[0054] The photoradical polymerization initiator can also be other photoradical polymerization initiators that can be purchased from BASF, such as Irgacure 784, Irgacure OXE01, Irgacure OXE02, and Irgacure 754.

[0055] From the perspective of high sensitivity, Irgacure 907, Irgacure 369, Irgacure 379EG, Irgacure OXE01, and Irgacure OXE02 are preferred photoradical polymerization initiators. From the perspective of solubility relative to solvents, Irgacure 907, Irgacure 379EG, and Irgacure OXE02 are even better. These photoradical polymerization initiators can be used alone or in combination, depending on the purpose and application.

[0056] From the viewpoint that the curing resin is sufficiently cured relative to 100 parts by weight of the curing resin, the content of the photoradical polymerization initiator is preferably 0.1 to 10 parts by weight, and from the viewpoint that unreacted substances are less likely to remain, it is more preferably 1 to 6 parts by weight.

[0057] The resin composition of the first embodiment may further contain a compound having a (meth)acrylic group (hereinafter also referred to as "(meth)acrylic compound"). That is, the resin composition in one embodiment contains a maleimide compound, a (meth)acrylic compound, and a curing agent (photoradical polymerization initiator). Furthermore, the coupling agent having a (meth)acrylic group described later is assumed not to be included in the (meth)acrylic compound.

[0058] (Meth)acrylic compounds may also include, for example, tricyclodecanediethanol di(meth)acrylate, ethoxylated bisphenol A di(meth)acrylate, propoxylated ethoxylated bisphenol A (meth)acrylate, dipentaerythritol poly(meth)acrylate, ethoxylated isocyanurate tri(meth)acrylate, polyethylene glycol di(meth)acrylate, sesquioxane derivatives having (meth)acrylic groups, etc.

[0059] From the viewpoint of excellent heat resistance, (meth)acrylic compounds are preferably tricyclodecanediethanol di(meth)acrylate, ethoxylated bisphenol A di(meth)acrylate, propoxylated ethoxylated bisphenol A (meth)acrylate, or sesquioxane derivatives having (meth)acrylic groups. From the viewpoint of excellent compatibility with maleimide compounds, tricyclodecanediethanol di(meth)acrylate is more preferred.

[0060] When the total amount of maleimide compound and (meth)acrylic acid compound is set to 100 parts by mass, the content of (meth)acrylic acid compound is preferably 0.1 parts by mass to 98 parts by mass to obtain good elongation, more preferably 2 parts by mass to 50 parts by mass to balance high frequency performance and fine wiring formation, and even more preferably 5 parts by mass to 40 parts by mass.

[0061] The resin composition of the first embodiment may further contain a coupling agent. That is, in one embodiment, the resin composition contains a maleimide compound, a curing agent (photoradical polymerization initiator), and a coupling agent, and in another embodiment, it contains a maleimide compound, a (meth)acrylic acid compound, a curing agent (photoradical polymerization initiator), and a coupling agent.

[0062] The coupling agent may also be a silane coupling agent. Silane coupling agents may also have vinyl, epoxy, styrene, acrylonitrile, methacryl, amino, urea, isocyanate, isocyanate, mercapto, etc.

[0063] Examples of vinyl-based silane coupling agents include KBM-1003 and KBE-1003 (both trade names, manufactured by Shin-Etsu Chemical Industry Co., Ltd. The same applies hereinafter). Examples of epoxy-based silane coupling agents include KBM-303, 402, 403, KBE-402, 403, X-12-981S, and X-12-984S. Examples of styrene-based silane coupling agents include KBM-1403. Examples of methacrylic silane coupling agents include KBM-502, KBM-503, KBE-502, and KBE-503. Examples of acrylonitrile-based silane coupling agents include KBM-5103, X-12-1048, and X-12-1050. Examples of silane coupling agents containing amino groups include KBM-602, KBM-603, KBM-903, KBM-573, KBM-575, KBE-903, KBE-9103P, and X-12-972F. Examples of silane coupling agents containing urea groups include KBE-585. Examples of silane coupling agents containing isocyanate groups include KBE-9007 and X-12-1159L. Examples of silane coupling agents containing isocyanate groups include KBM-9659. Examples of silane coupling agents containing mercapto groups include KBM-802, KBM-803, X-12-1154, and X-12-1156. Depending on the purpose and application, one or more of these agents may be used alone or in combination.

[0064] From the viewpoint of improving adhesion to glass, silicon dioxide, etc., relative to 100 parts by weight of curing resin, the content of silane coupling agent is preferably 0.01 parts by weight to 5 parts by weight, and from the viewpoint of making it difficult for unreacted substances to remain, it is more preferably 0.1 parts by weight to 2 parts by weight.

[0065] In addition to maleimide compounds, the resin composition of the first embodiment may further contain a thermosetting resin as a curing resin. Examples of thermosetting resins include: epoxy resins, phenolic resins, cyanate ester resins, isocyanate ester resins, benzoxazine resins, oxetane resins, amino resins, unsaturated polyester resins, allyl resins, dicyclopentadiene resins, silicone resins, triazine resins, melamine resins, etc. One of these may be used alone, or two or more may be used in combination. From the viewpoint of heat resistance and electrical insulation, epoxy resins or cyanate ester resins are preferred as thermosetting resins.

[0066] Examples of epoxy resins include: bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenolic varnish type epoxy resin, cresol phenolic varnish type epoxy resin, bisphenol A phenolic varnish type epoxy resin, bisphenol F phenolic varnish type epoxy resin, stilbene type epoxy resin, epoxy resin containing a triazine skeleton, epoxy resin containing a benzoyl skeleton, biphenyl type epoxy resin, xylylene type epoxy resin, biphenyl aralkyl type epoxy resin, naphthalene type epoxy resin, dicyclopentadiene type epoxy resin, alicyclic epoxy resin, diglycidyl ether compounds of polyfunctional phenols and anthracene and other polycyclic aromatic compounds, and phosphorus-containing epoxy resins formed by introducing phosphorus compounds into these resins. In terms of heat resistance and flame retardancy, the epoxy resin is a biphenyl aralkyl type epoxy resin or a naphthalene type epoxy resin. These can be used alone or in combination of two or more.

[0067] Examples of cyanate ester resins include phenolic varnish-type cyanate ester resins, bisphenol A-type cyanate ester resins, bisphenol E-type cyanate ester resins, tetramethylbisphenol F-type cyanate ester resins, and prepolymers formed by triazinizing some of these. These can be used alone or in combination of two or more. From the viewpoint of heat resistance and flame retardancy, phenolic varnish-type cyanate ester resins are preferred.

[0068] In addition to the photoradical polymerization initiator, the resin composition of the first embodiment may further contain other curing agents as curing agents. Examples of other curing agents include: aromatic amine compounds such as dicyandiamine, 4,4'-diaminodiphenylmethane, 4,4'-diamino-3,3'-diethyl-diphenylmethane, 4,4'-diaminodiphenylmethane, phenylenediamine, and xylenediamine; aliphatic amine compounds such as hexamethylenediamine and 2,5-dimethylhexamethylenediamine; and guanidine compounds such as melamine and benzoguanamine. From the viewpoint of obtaining good reactivity and heat resistance, aromatic amine compounds are preferred as other curing agents.

[0069] When the resin composition contains cyanate ester resin, the resin composition may also contain polyfunctional phenolic compounds such as phenolic varnish, cresol varnish, and aminotriazine phenolic varnish resin, as well as acid anhydrides such as phthalic anhydride, pyromellitic dianhydride, maleic anhydride, and maleic anhydride copolymers as curing agents. These can be used alone or in combination of two or more.

[0070] The resin composition of the first embodiment may further contain a thermoplastic elastomer. Examples of thermoplastic elastomers include: styrene-based elastomers, olefin-based elastomers, urethane-based elastomers, polyester-based elastomers, polyamide-based elastomers, acrylic elastomers, silicone-based elastomers, and derivatives thereof. Thermoplastic elastomers comprise hard segments and soft segments; generally, the former contributes to heat resistance and strength, while the latter contributes to flexibility and toughness. From the viewpoint of further improving heat resistance and insulation reliability, styrene-based elastomers, olefin-based elastomers, polyamide-based elastomers, or silicone-based elastomers are preferred. One or more of these can be used alone or in combination.

[0071] As thermoplastic elastomers, those possessing reactive functional groups at the molecular ends or in the molecular chain can be used. Examples of reactive functional groups include: epoxy, hydroxyl, carboxyl, amino, amide, isocyanate, acrylamide, methacrylamide, vinyl, etc. By possessing these reactive functional groups at the molecular ends or in the molecular chain, thermoplastic elastomers can improve their compatibility with curable resins and more effectively reduce internal stress generated during the curing of the resin composition, thereby significantly reducing substrate warpage. From the viewpoint of good adhesion to metals, the reactive functional group is preferably epoxy, hydroxyl, carboxyl, amino, or amide; from the viewpoint of further improving heat resistance and insulation reliability, epoxy, hydroxyl, or amino groups are more preferred.

[0072] From the viewpoint of effectively exhibiting low shrinkage and low thermal expansion of the cured product, the content of thermoplastic elastomer is preferably 0.1 to 50 parts by mass, and more preferably 2 to 30 parts by mass, relative to 100 parts by mass of the total solid components in the resin composition.

[0073] In one embodiment (hereinafter also referred to as "the second embodiment"), the resin composition further contains a thermoplastic resin in addition to a curable resin and a curing agent. In this case, the curable resin is preferably a thermoplastic resin. That is, the resin composition of the second embodiment contains a thermoplastic resin, a thermoplastic resin, and a curing agent.

[0074] Thermoplastic resins are not particularly limited to any type of resin that softens upon heating. Thermoplastic resins may also have reactive functional groups at the molecular ends or in the molecular chain. Examples of reactive functional groups include: epoxy, hydroxyl, carboxyl, amino, amide, isocyanate, acrylonitrile, methacrylic, vinyl, and maleic anhydride groups.

[0075] From the viewpoint of suppressing the hygroscopicity and dielectric constant of thermoplastic resins, resins containing silicate chains are preferred. Examples of thermoplastic resins containing silicate chains include: silicate-containing acrylic resins, silicate-containing polyamide resins, silicate-containing polyimides, silicate-containing polyurethanes, silicate-modified acrylates, silicate-modified epoxy resins, silicone resins, or silicone diamines. From the viewpoint of suppressing gas escape during heating and improving the heat resistance and adhesion of the interlayer insulation layer, silicate-containing thermoplastic resins are preferably silicate-containing polyimides.

[0076] Silicon-containing polyimides can be synthesized, for example, by reacting a silicon-containing diamine with a tetracarboxylic acid dianhydride, or by reacting a silicon-containing diamine with a bismaleimide.

[0077] The siloxane diamine preferably comprises the structure represented by the following formula (5). [Chemistry 12] In the formula, Q4 and Q9 independently represent alkyl groups having 1 to 5 carbon atoms or phenyl groups having substituents, Q5, Q6, Q7 and Q8 independently represent alkyl, phenyl or phenoxy groups having 1 to 5 carbon atoms, and d represents an integer from 1 to 5.

[0078] Examples of siloxane diamines with d=1 in formula (5) include: 1,1,3,3-tetramethyl-1,3-bis(4-aminophenyl)disiloxane, 1,1,3,3-tetraphenoxy-1,3-bis(4-aminoethyl)disiloxane, 1,1,3,3-tetraphenyl-1,3-bis(2-aminoethyl)disiloxane, and 1,1,3,3-tetraphenyl-1,3-bis(3-aminoethyl)disiloxane. Examples include 1,1,3,3-tetramethyl-1,3-bis(2-aminoethyl)disiloxane, 1,1,3,3-tetramethyl-1,3-bis(3-aminopropyl)disiloxane, 1,1,3,3-tetramethyl-1,3-bis(3-aminobutyl)disiloxane, and 1,3-dimethyl-1,3-dimethoxy-1,3-bis(4-aminobutyl)disiloxane.

[0079] Examples of siloxane diamines with d=2 in formula (5) include: 1,1,3,3,5,5-hexamethyl-1,5-bis(4-aminophenyl)trisiloxane, 1,1,5,5-tetraphenyl-3,3-dimethyl-1,5-bis(3-aminopropyl)trisiloxane, 1,1,5,5-tetraphenyl-3,3-dimethoxy-1,5-bis(4-aminobutyl)trisiloxane, 1,1,5,5-tetraphenyl-3,3-dimethoxy-1,5-bis(5-aminopentyl)trisiloxane, and 1,1,5,5-tetramethyl-3,3-dimethoxy-1,5-bis(5-aminopentyl)trisiloxane. - bis(2-aminoethyl)trisiloxane, 1,1,5,5-tetramethyl-3,3-dimethoxy-1,5-bis(4-aminobutyl)trisiloxane, 1,1,5,5-tetramethyl-3,3-dimethoxy-1,5-bis(5-aminopentyl)trisiloxane, 1,1,3,3,5,5-hexamethyl-1,5-bis(3-aminopropyl)trisiloxane, 1,1,3,3,5,5-hexaethyl-1,5-bis(3-aminopropyl)trisiloxane, 1,1,3,3,5,5-hexapropyl-1,5-bis(3-aminopropyl)trisiloxane, etc.

[0080] Commercially available siloxane diamines include, for example: "PAM-E" (amine equivalent: 130 g / mol), "KF-8010" (amine equivalent: 430 g / mol), "X-22-161A" (amine equivalent: 800 g / mol), "X-22-161B" (amine equivalent: 1500 g / mol), "KF-8012" (amine equivalent: 2200 g / mol), "KF-8008" (amine equivalent: 5700 g / mol), "X-22-9409" (amine equivalent: 700 g / mol, phenyl side chain), and "X-22-1660B-3" (amine equivalent: 2200 g / mol). The following are also available: "BY-16-853U" (amino equivalent: 460 g / mol), "BY-16-853" (amino equivalent: 650 g / mol), and "BY-16-853B" (amino equivalent: 2200 g / mol) (manufactured by Toray Dow Corning Co., Ltd.). The siloxane diamines may be used alone or in combination of two or more. From the viewpoint of reactivity with maleimine, it is preferred to use at least one of "PAM-E", "KF-8010", "X-22-161A", "X-22-161B", "BY-16-853U", and "BY-16-853". From the viewpoint of dielectric properties, it is preferable to use at least one of "PAM-E", "KF-8010", "X-22-161A", "BY-16-853U", and "BY-16-853". From the viewpoint of varnish compatibility, it is preferable to use at least one of "KF-8010", "X-22-161A", and "BY-16-853".

[0081] The content of silicate components in polyimide containing silicate is not particularly limited. From the viewpoint of reactivity and compatibility, it is, for example, 5% to 50% by mass relative to the total mass of polyimide. From the viewpoint of heat resistance, it is preferably 5% to 30% by mass. From the viewpoint of further reducing the moisture absorption rate of the interlayer insulation layer, it is more preferably 10% to 30% by mass.

[0082] There are no particular restrictions on other diamine components used as raw materials for polyimide. Examples include: o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, 3,3'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,3'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 4,4'-diaminodiphenyl ethermethane, bis(4-amino-3,5-dimethylphenyl)methane, bis(4-amino-3,5-diisopropylphenyl)methane, 3,3'-diaminodiphenyldifluoromethane, 3,4'-diaminodiphenyldifluoromethane, 4,4'-diaminodiphenyldifluoromethane, etc. 3,3'-Diaminodiphenyl sulfide, 3,4'-Diaminodiphenyl sulfide, 4,4'-Diaminodiphenyl sulfide, 3,3'-Diaminodiphenyl sulfide, 3,4'-Diaminodiphenyl sulfide, 4,4'-Diaminodiphenyl sulfide, 3,3'-Diaminodiphenyl ketone, 3,4'-Diaminodiphenyl ketone, 4,4'-Diaminodiphenyl ketone, 2,2-bis(3-aminophenyl)propane, 2,2'-(3,4'-Diaminodiphenyl)propane, 2,2-bis(4-aminophenyl)propane, 2,2-bis(3-aminophenyl)hexafluoropropane, 2,2-(3,4'-Diaminodiphenyl)hexafluoropropane Alkane, 2,2-bis(4-aminophenyl)hexafluoropropane, 1,3-bis(3-aminophenoxy)benzene, 1,4-bis(3-aminophenoxy)benzene, 1,4-bis(4-aminophenoxy)benzene, 3,3'-(1,4-extrinylphenylbis(1-methylethylidene))bisaniline, 3,4'-(1,4-extrinylphenylbis(1-methylethylidene))bisaniline, 4,4'-(1,4-extrinylphenylbis(1-methylethylidene))bisaniline, 2,2-bis(4-(3-aminophenoxy)phenyl)propane, 2,2-bis(4-(3-aminophenoxy)phenyl)hexafluoropropane, 2,2-bis(4-(4-) Aromatic diamines such as aminophenoxy)phenyl)hexafluoropropane, bis(4-(3-aminophenoxy)phenyl) sulfide, bis(4-(4-aminophenoxy)phenyl) sulfide, bis(4-(3-aminophenoxy)phenyl) sulfide, bis(4-(4-aminophenoxy)phenyl) sulfide, 3,3'-dihydroxy-4,4'-diaminobiphenyl, 3,5-diaminobenzoic acid, 1,3-bis(aminomethyl)cyclohexane, 2,2-bis(4-aminophenoxyphenyl)propane, aliphatic ether diamines represented by formula (4) below, aliphatic diamines represented by formula (11) below, and diamines having a carboxyl group and / or a hydroxyl group in the molecule.

[0083] [Chemistry 13] In the formula, Q1, Q2 and Q3 independently represent alkyl groups with 1 to 10 carbon atoms, and b represents an integer from 2 to 80.

[0084] [Chemistry 14] In the formula, c represents an integer from 5 to 20.

[0085] As an aliphatic ether diamine represented by formula (4), the following formulas can be listed for example: [Chemistry 15] (In the formula, n represents an integer greater than or equal to 1.) The aliphatic diamines represented, the aliphatic ether diamines represented by the following formula (12), etc. [Chemistry 16] In the formula, e represents an integer from 0 to 80.

[0086] Specific examples of aliphatic diamines represented by formula (11) include: 1,2-diaminoethane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, 1,6-diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminononane, 1,10-diaminodecane, 1,11-diaminoundecane, 1,12-diaminododecane, 1,2-diaminocyclohexane, etc.

[0087] The diamine component can be used alone or in combination with two or more components.

[0088] As a raw material for polyimide, tetracarboxylic dianhydride can also be used, for example. There are no particular limitations on the acid anhydride used; examples include: pyromellitic dianhydride, 3,3',4,4'-biphenyltetracarboxylic dianhydride, 2,2',3,3'-biphenyltetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)propane dianhydride, 2,2-bis(2,3-dicarboxyphenyl)propane dianhydride, 1,1-bis(2,3-dicarboxyphenyl)ethane dianhydride, 1,1-bis(3,4-dicarboxyphenyl)ethane dianhydride, bis(2,3-dicarboxyphenyl)methane dianhydride, bis(3,4-dicarboxyphenyl)methane dianhydride, bis(3,4-dicarboxyphenyl)granite dianhydride, 3,4,9,10-perylenetetracarboxylic dianhydride, Bis(3,4-dicarboxyphenyl) ether dianhydride, benzene-1,2,3,4-tetracarboxylic dianhydride, 3,4,3',4'-benzophenone tetracarboxylic dianhydride, 2,3,2',3'-benzophenone tetracarboxylic dianhydride, 3,3,3',4'-benzophenone tetracarboxylic dianhydride, 1,2,5,6-naphthalene tetracarboxylic dianhydride, 1,4,5,8-naphthalene tetracarboxylic dianhydride, 2,3,6,7-naphthalene tetracarboxylic dianhydride, 1,2,4,5-naphthalene tetracarboxylic dianhydride, 2,6-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,3,6,7-tetrachloronaphthalene-1, 4,5,8-Tetracarboxylic dianhydride, phenanthrene-1,8,9,10-tetracarboxylic dianhydride, pyrazine-2,3,5,6-tetracarboxylic dianhydride, thiophene-2,3,5,6-tetracarboxylic dianhydride, 2,3,3',4'-biphenyltetracarboxylic dianhydride, 3,4,3',4'-biphenyltetracarboxylic dianhydride, 2,3,2',3'-biphenyltetracarboxylic dianhydride, bis(3,4-dicarboxyphenyl)dimethylsilane dianhydride, bis(3,4-dicarboxyphenyl)methylphenylsilane dianhydride, bis(3,4-dicarboxyphenyl)diphenylsilane dianhydride, 1,4-bis(3,4-dicarboxyphenyldimethylsilyl)phenyl dianhydride, 1,3-bis... (3,4-Dicarboxyphenyl)-1,1,3,3-Tetramethyldicyclohexane dianhydride, p-phenylbis(triphenylamine), ethyltetracarboxylic dianhydride, 1,2,3,4-butanetetracarboxylic dianhydride, decahydronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 4,8-dimethyl-1,2,3,5,6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic dianhydride, cyclopentane-1,2,3,4-tetracarboxylic dianhydride, pyrrolidine-2,3,4,5-tetracarboxylic dianhydride, 1,2,3,4-cyclobutanetetracarboxylic dianhydride, bis(exo-bicyclo[2.2.1]heptane-2,3-dicarboxylic acid) dianhydride, bicyclo-[2.2.1]heptane-2,3-dicarboxylic acid) dianhydride.2]-Octo-7-en-2,3,5,6-tetracarboxylic acid dianhydride, 2,2-bis(3,4-dicarboxyphenyl)propane dianhydride, 2,2-bis[4-(3,4-dicarboxyphenyl)phenyl]propane dianhydride, 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride, 2,2-bis[4-(3,4-dicarboxyphenyl)phenyl]hexafluoropropane dianhydride, 4,4'-bis(3,4-dicarboxyphenyl) (Oxy)diphenyl sulfide dianhydride, 1,4-bis(2-hydroxyhexafluoroisopropyl)benzenebis(triphenylene anhydride), 1,3-bis(2-hydroxyhexafluoroisopropyl)benzenebis(triphenylene anhydride), 5-(2,5-dioxotetrahydrofuranyl)-3-methyl-3-cyclohexene-1,2-dicarboxylic acid dianhydride, tetrahydrofuran-2,3,4,5-tetracarboxylic acid dianhydride, and tetracarboxylic acid dianhydride represented by formula (7) below, etc. [Chemistry 17] In the formula, a represents an integer from 2 to 20.

[0089] The tetracarboxylic acid dianhydride represented by formula (7) can be synthesized, for example, from trimellitic anhydride monochloride and the corresponding diol. Specific examples of tetracarboxylic acid dianhydrides represented by formula (7) include: 1,2-(epylene)bis(triphenyltrihydride), 1,3-(trimethylene)bis(triphenyltrihydride), 1,4-(tetramethylene)bis(triphenyltrihydride), 1,5-(pentamethylene)bis(triphenyltrihydride), 1,6-(hexamethylene)bis(triphenyltrihydride), 1,7-(heptamethylene)bis(triphenyltrihydride), 1,8-(octamethylene)bis(triphenyltrihydride), 1,9-(nonamethylene)bis(triphenyltrihydride), 1,10-(decamethylene)bis(triphenyltrihydride), 1,12-(dodecamethylene)bis(triphenyltrihydride), 1,16-(hexadecamethylene)bis(triphenyltrihydride), 1,18-(octadecamethylene)bis(triphenyltrihydride), etc.

[0090] From the viewpoint of imparting good solubility and moisture resistance to the resin composition relative to the solvent, the tetracarboxylic dianhydride may also include the tetracarboxylic dianhydride represented by formula (6) or formula (8) below. [Chemistry 18] [Chemistry 19]

[0091] The above-mentioned tetracarboxylic acid dianhydrides can be used alone or in combination with two or more.

[0092] As a raw material for polyimide, bismaleimide can also be used, for example. There are no particular limitations on bismaleimide; examples include: bis(4-maleimidephenyl)methane, polyphenylmethane maleimide, bis(4-maleimidephenyl) ether, bis(4-maleimidephenyl) benzoxide, 3,3-dimethyl-5,5-diethyl-4,4-diphenylmethane bismaleimide, 4-methyl-1,3-epenylphenyl bismaleimide, m-phenyl bismaleimide, 2,2-bis(4-(4-maleimidephenoxy)phenyl)propane, etc.

[0093] The aforementioned bismaleimides can be used alone or in combination of two or more. From the viewpoint of high reactivity, further improvement of dielectric properties, and linearity, bismaleimides are preferably at least one of bis(4-maleimidephenyl)methane, bis(4-maleimidephenyl)monium, 3,3-dimethyl-5,5-diethyl-4,4-diphenylmethane bismaleimide, and 2,2-bis(4-(4-maleimidephenoxy)phenyl)propane. From the viewpoint of solubility in solvents, bismaleimides are preferably at least one of 3,3-dimethyl-5,5-diethyl-4,4-diphenylmethane bismaleimide, bis(4-maleimidephenyl)methane, and 2,2-bis(4-(4-maleimidephenoxy)phenyl)propane. From a cost perspective, bismaleimide is preferably bis(4-maleimidephenyl)methane. From a linearity perspective, bismaleimide is preferably 2,2-bis(4-(4-maleimidephenoxy)phenyl)propane, or "BMI-3000" (trade name) manufactured by Designer Molecules Inc.

[0094] Based on the mass of the resin composition (excluding fillers), the content of thermoplastic resin can be 10% to 70% by mass.

[0095] Thermosetting resins are not particularly limited as long as they are resin compositions that harden by reacting with a hardener upon heating. Thermosetting resins may also have reactive functional groups at the molecular ends or in the molecular chain. Examples of reactive functional groups include: epoxy, hydroxyl, carboxyl, amino, amide, isocyanate, acrylonitrile, methacrylonitrile, vinyl, maleic anhydride, etc.

[0096] The thermosetting resin is preferably a thermosetting elastomer selected from styrene-based elastomers, olefin-based elastomers, urethane-based elastomers, polyester-based elastomers, polyamide-based elastomers, acrylic elastomers, and silicone-based elastomers. These thermosetting elastomers comprise hard segment components and soft segment components. Generally, the former contributes to the resin's heat resistance and strength, while the latter contributes to the resin's flexibility and toughness. A single thermosetting elastomer can be used, or two or more can be used in combination. From the viewpoint of further improving the heat resistance and insulation reliability of the interlayer insulation layer, the thermosetting elastomer is preferably at least one of styrene-based elastomers, olefin-based elastomers, polyamide-based elastomers, and silicone-based elastomers; from the viewpoint of the dielectric properties of the interlayer insulation layer, it is more preferably at least one of styrene-based elastomers and olefin-based elastomers.

[0097] Thermosetting elastomers may also have reactive functional groups at the molecular ends or in the molecular chain. Examples of reactive functional groups include: epoxy, hydroxyl, carboxyl, amino, acetamiprid, isocyanate, acrylonitrile, methacrylonitrile, vinyl, and maleic anhydride. From the viewpoint of compatibility and linearity, reactive functional groups are preferably epoxy, amino, acrylonitrile, methacrylonitrile, vinyl, or maleic anhydride, and more preferably epoxy, amino, or maleic anhydride.

[0098] Based on the mass of the resin composition (excluding fillers), the content of thermosetting elastomer is, for example, 10% to 70% by mass, and preferably 20% to 60% by mass from the viewpoint of dielectric properties and varnish compatibility.

[0099] Examples of curing agents include: peroxide-based compounds, imidazoles and their derivatives, organophosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. From the viewpoint of reactivity, the curing agent is preferably at least one of peroxide-based, phosphorus-based, and imidazole-based compounds, and from the viewpoint of the good self-polymerization properties of maleimide groups, peroxide-based compounds are more preferred.

[0100] The content of the curing agent can vary depending on the type of catalyst and resin, or the application of the applicable resin composition. For example, when the curing agent is peroxide-based, the content of the curing agent is preferably 0.1% to 10% by mass based on the mass of the resin composition (excluding fillers), more preferably 0.5% to 5% by mass from the viewpoint of dielectric properties and membrane operability, and even more preferably 0.75% to 3% by mass.

[0101] The resin composition of the second embodiment may also include epoxy resin as a thermosetting resin. Preferably, the epoxy resin contains at least two epoxy groups within its molecule. From the viewpoint of curability and cured product properties, the epoxy resin is more preferably a glycidyl ether type epoxy resin of phenol. Examples of such resins include: glycidyl ethers of bisphenol A (or AD, S, F types), hydrogenated bisphenol A, ethylene oxide adduct bisphenol A, propylene oxide adduct bisphenol A, phenol-formaldehyde resins, cresol phenol-formaldehyde resins, bisphenol A, naphthalene resins, trifunctional (or tetrafunctional) glycidyl ethers, dicyclopentadiene phenol resins, dimer acid glycidyl esters, trifunctional (or tetrafunctional) glycidyl amines, and naphthalene resins. Epoxy resins can be used alone or in combination with two or more types.

[0102] The resin composition of the second embodiment may also include (meth)acrylate compounds. Examples of (meth)acrylate compounds include: diethylene glycol diacrylate, triethylene glycol diacrylate, tetraethylene glycol diacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, trimethylolpropane diacrylate, trimethylolpropane triacrylate, trimethylolpropane dimethacrylate, trimethylolpropane trimethacrylate, 1,4-butanediol diacrylate, 1,6-hexanediol diacrylate, 1,4-butanediol dimethacrylate, 1,6-hexanediol dimethacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, pentaerythritol trimethacrylate, and pentaerythritol tetramethacrylate. Dipentaerythritol hexaacrylate, dipentaerythritol hexamethacrylate, styrene, divinylbenzene, 4-vinyltoluene, 4-vinylpyridine, N-vinylpyrrolidone, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 1,3-acryloxy-2-hydroxypropane, 1,2-methacryloxy-2-hydroxypropane, methylenebisacrylamide, N,N-dimethylacrylamide, N-hydroxymethylacrylamide, triacrylate of tri(β-hydroxyethyl)isocyanurate, compounds represented by the following formula (13), urethane acrylates or urethane methacrylates, urea acrylates, isocyanuric acid modified di / triacrylates and methacrylates, etc. [Chemistry 20] In the formula, R41 and R42 independently represent hydrogen atoms or methyl groups, respectively, and f and g independently represent integers greater than 1.

[0103] The resin composition of the second embodiment may further contain a bonding agent. Examples of bonding agents include silane coupling agents, triazole compounds, or tetraazole compounds.

[0104] To improve adhesion to metals, silane coupling agents preferably use compounds containing nitrogen atoms. Examples of silane coupling agents include: N-2-(aminoethyl)-3-aminopropylmethyldimethoxysilane, N-2-(aminoethyl)-3-aminopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N-(1,3-dimethyl-butylene)propylamine, N-phenyl-3-aminopropyltrimethoxysilane, tris-(trimethoxysilylpropyl)isocyanate, 3-ureopropyltrialkoxysilane, and 3-isocyanate-propyltriethoxysilane. From the perspective of the effects, heat resistance and manufacturing cost of the addition, the content of silane coupling agent is preferably 0.1 parts by weight to 20 parts by weight, based on the total amount of solid components in the resin composition.

[0105] Examples of triazole compounds include: 2-(2'-hydroxy-5'-methylphenyl)benzotriazole, 2-(2'-hydroxy-3'-tert-butyl-5'-methylphenyl)-5-chlorobenzotriazole, 2-(2'-hydroxy-3',5'-di-tert-pentylphenyl)benzotriazole, 2-(2'-hydroxy-5'-tert-octylphenyl)benzotriazole, and 2,2'-methylenebis[6-(2H-benzotriazole-2-yl)-4-tert-octyl] [Bentophenol], 6-(2-benzotriazolyl)-4-tertoctyl-6'-tertbutyl-4'-methyl-2,2'-methylenebisphenol, 1,2,3-benzotriazole, 1-[N,N-bis(2-ethylhexyl)aminomethyl]benzotriazole, carboxybenzotriazole, 1-[N,N-bis(2-ethylhexyl)aminomethyl]methylbenzotriazole, 2,2'-[[(methyl-1H-benzotriazol-1-yl)methyl]imino]diethanol, etc.

[0106] Examples of tetrazolium compounds include: 1H-tetrazole, 5-amino-1H-tetrazole, 5-methyl-1H-tetrazole, 5-phenyl-1H-tetrazole, 1-methyl-5-ethyl-1H-tetrazole, 1-methyl-5-mercapto-1H-tetrazole, 1-phenyl-5-mercapto-1H-tetrazole, 1-(2-dimethylaminoethyl)-5-mercapto-1H-tetrazole, 2-methoxy-5-(5-trifluoromethyl-1H-tetrazole-1-yl)-benzaldehyde, 4,5-bis(5-tetrazole)-[1.2.3]triazole, 1-methyl-5-benzoyl-1H-tetrazole, etc.

[0107] From the perspective of the effects, heat resistance and manufacturing cost of the addition, the content of triazole compounds and tetraazole compounds is preferably 0.1 parts by weight to 20 parts by weight, based on the total amount of solid components in the resin composition.

[0108] The silane coupling agent, triazole compound, and tetraazole compound can be used individually or in combination.

[0109] The resin composition in the second embodiment may further contain an ion-scavenging agent. By using an ion-scavenging agent to adsorb ionic impurities in the resin composition, the insulation reliability of the interlayer insulation layer during moisture absorption can be further improved. Examples of ion-scavenging agents include: triazine thiol compounds, phenolic reducing agents, or powdered inorganic compounds such as bismuth-based, antimony-based, magnesium-based, aluminum-based, zirconium-based, calcium-based, titanium-based, and tin-based compounds, as well as mixtures thereof. Triazine thiol compounds and phenolic reducing agents are well-known as copper toxicity inhibitors used to prevent copper from ionizing and dissolving.

[0110] Examples of ion scavengers include inorganic ion scavengers (manufactured by Dong-A Synthetic Co., Ltd., trade names: IXE-300 (antimony-based), IXE-500 (bismuth-based), IXE-600 (antimony and bismuth mixture), IXE-700 (magnesium and aluminum mixture), IXE-800 (zirconium-based), and IXE-1100 (calcium-based)). One of these ion scavengers can be used alone, or two or more can be used in combination. From the perspective of the effect, heat resistance, and manufacturing cost, the content of the ion scavenger is preferably 0.01 parts by weight to 10 parts by weight, based on the total amount of solid components in the resin composition.

[0111] The following describes the common aspects of the first and second embodiments. From the viewpoint of imparting low hygroscopicity and low moisture permeability, the resin composition may further include fillers (filler materials). The fillers may be inorganic fillers containing inorganic materials or organic fillers containing organic materials. These fillers are preferably insulating fillers.

[0112] Examples of inorganic fillers include: alumina, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, aluminum nitride, crystalline silicon dioxide, amorphous silicon dioxide, boron nitride, titanium oxide, glass, iron oxide, and ceramics. Examples of organic fillers include carbon and rubber-based fillers. Fillers of any type and shape can be used without particular restrictions.

[0113] Fillers can be used separately according to the desired function. For example, inorganic fillers can be added to impart thermal conductivity, low thermal expansion, and low moisture absorption to the interlayer insulation of wiring. Organic fillers can be added, for example, to impart toughness to the interlayer insulation of wiring. The filler only needs to include at least one of inorganic and organic fillers, and one type of filler can be used alone or in combination of two or more. From the viewpoint of imparting the required thermal conductivity, low moisture absorption, and insulation to the interlayer insulation of wiring, inorganic fillers are preferred. From the viewpoint of good dispersibility relative to resin varnishes and the viewpoint of imparting high adhesion upon heating, at least one of silica fillers and alumina fillers is more preferred.

[0114] The average particle size of the filler is, for example, 10 μm or less, and the maximum particle size is, for example, 30 μm or less. Preferably, the average particle size of the filler is 5 μm or less, and the maximum particle size is 20 μm or less. By having an average particle size of 10 μm or less and a maximum particle size of 30 μm or less, the effect of improving the breaking toughness of the interlayer insulation can be effectively achieved, and the reduction and unevenness of the bonding strength of the interlayer insulation can be suppressed. It can also suppress the situation where the surface of the interlayer insulation becomes rough, leading to a reduction in bonding strength. There are no particular limitations on the lower limit of the average particle size and the lower limit of the maximum particle size of the filler, and both can be 0.001 μm or more.

[0115] Methods for determining the average and maximum particle size of fillers include, for example, using a scanning electron microscope (SEM) to measure the particle size of approximately 20 fillers. One SEM method involves preparing a sample by heat-curing a resin composition containing fillers (preferably at 150°C to 180°C for 1 to 10 hours), cutting off the central portion of the sample, and observing its cross-section using SEM. In this case, the probability of fillers with a particle size of 30 μm or less in the cross-section is preferably 80% or more of all fillers.

[0116] The filler content can be appropriately determined according to the desired properties or functions. For example, based on the mass of the resin composition, the filler content is preferably 1% to 70% by mass, or 2% to 60% by mass, more preferably 5% to 50% by mass. By increasing the filler content, a high elastic modulus of the interlayer insulation can be achieved. This effectively improves cutability (cutting performance using a cutting machine blade), wire bonding (ultrasonic efficiency), and adhesion strength during heating. From the viewpoint of suppressing the reduction in heat-bonding properties, the filler content is preferably below the aforementioned upper limit. An optimal filler content can also be determined to achieve a balance of the required properties. The mixing and kneading of the filler can be appropriately combined with common dispersers such as mixers, pounders, three-roll mills, and ball mills.

[0117] From the perspective of maintaining stability, preventing electromigration, and preventing corrosion of metallic conductor circuits, the resin composition may further contain antioxidants. There are no particular limitations on antioxidants; examples include benzophenone-based, benzoate-based, hindered amine-based, benzotriazole-based, and phenolic antioxidants. From the perspectives of the effects of addition, heat resistance, and cost, the antioxidant content is preferably 0.01 to 10 parts by weight per 100 parts by weight of the resin composition.

[0118] To further promote curing, the resin composition may also contain a catalyst. Examples of catalysts include: peroxides, imidazole compounds, organophosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. These may be used alone or in combination of two or more. From a reactivity point of view, the catalyst is preferably selected from at least one of the group consisting of peroxides, imidazole compounds, and organophosphorus compounds, and particularly from the viewpoint of the self-polymerization of maleimide groups and its facilitating reaction between maleimide and acrylonitrile groups, peroxides are more preferred.

[0119] The resin composition may also contain flame retardants. There are no particular limitations on flame retardants, but examples include: halogenated flame retardants such as brominated and chlorinated flame retardants; phosphorus-based flame retardants such as triphenyl phosphate, tricresyl phosphate, trichloropropyl phosphate, phosphate ester compounds, and red phosphorus; nitrogen-based flame retardants such as guanidine sulfonate, melamine sulfate, melamine polyphosphate, and melamine cyanurate; phosphazene-based flame retardants such as cyclophosphamide and polyphosphazene; and inorganic flame retardants such as antimony trioxide. These flame retardants can be used alone or in combination of two or more.

[0120] The resin composition may also contain ultraviolet absorbers. There are no particular limitations on ultraviolet absorbers; for example, benzotriazole ultraviolet absorbers can be listed.

[0121] The resin composition may also contain fluorescent whitening agents. There are no particular limitations on fluorescent whitening agents; for example, stilbene derivatives can be listed.

[0122] From an operational point of view, the resin composition is preferably in film form. The resin composition may also be a varnish (liquid) formed by dissolving or uniformly dispersing the components in a solvent.

[0123] There are no particular limitations on the preparation methods and conditions for varnish. For example, the following methods can be listed: after thoroughly and evenly stirring and mixing the main components in a specified amount using a mixer, the mixture is kneaded using a mixing roller, extruder, kneader, roller, or extruder, and then the resulting mixture is cooled and pulverized. There are no particular limitations on the kneading method.

[0124] When the resin composition is a varnish, the solvent can also be an organic solvent. There are no particular limitations on the organic solvent; for example, it can be alcohols such as methanol, ethanol, butanol, butyl cellosolve, ethylene glycol monomethyl ether, and propylene glycol monomethyl ether; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and cyclopentanone; aromatic hydrocarbons such as toluene, xylene, mesitylene, and limonene; esters such as ethyl methoxy, ethyl ethoxy, ethyl butoxy, and ethyl acetate; and nitrogen-containing compounds such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone. One of these can be used alone, or two or more can be used in combination. In terms of solubility, toluene, xylene, cyclohexanone, cyclopentanone, limonene, or mesitylene are preferred organic solvents; in terms of low toxicity, cyclopentanone, limonene, or mesitylene are even more preferred organic solvents.

[0125] The organic solvent is preferably used in an amount of 5% to 90% by mass of the solid component of the resin composition in, for example, varnish. In order to maintain the workability and coating properties of the varnish well, the organic solvent is more preferably used in an amount of 10% to 60% by mass of the solid component.

[0126] The optimal moisture absorption rate of the cured resin composition after being placed at 130°C and 85% relative humidity for 200 hours is less than 1% by mass.

[0127] The moisture absorption rate of the cured resin composition after being placed at 130°C and 85% relative humidity for 200 hours can be determined by the following procedure: A 10 μm thick curable film of the resin composition is laminated onto a silicon wafer at 100°C, and then cured at 180°C for 2 hours. The sample, which is a laminate of silicon wafer and the cured resin composition, is placed in a constant temperature and humidity bath (EHS-221MD manufactured by Espec) at 130°C and 85% relative humidity for 200 hours. Then, the temperature in the constant temperature and humidity bath is lowered to 50°C, the sample is removed, and the cured film is shaved from the silicon wafer. The weight loss rate of the hardened sample obtained by heating was measured using a differential thermal gravimetric analyzer (manufactured by SII Nano Technology, trade name "TG / DTA6300") under the conditions of a heating rate of 10 °C / min, a nitrogen flow rate of 400 mL / min, and a temperature range of 25 °C to 150 °C. The weight loss rate (ratio of the mass of the hardened sample to the mass of the sample before measurement) at the time point up to 150 °C was recorded as the moisture absorption rate (mass%).

[0128] From the perspective of insulation reliability, the concentration of chloride ions in the cured resin composition is preferably below 5 ppm, and more preferably below 3 ppm to suppress discoloration of copper wiring. The concentration of chloride ions can be determined as follows: 1 g of the cured sample and 10 g of ultrapure water (as extraction solution) are placed in a Teflon (registered trademark) heat-resistant container and heated at 130°C for 5 hours. The extraction solution is then filtered and analyzed by ion chromatography. In the obtained chromatogram, the peak value detected between 0 and 30 minutes of dissolution is considered the total amount of dissolved substances, and the mass of chloride ions in the cured sample is calculated based on the peak area of ​​chloride ions around 9.6 minutes. The ratio of the calculated mass of chloride ions to the mass of the cured sample is calculated as the concentration of chloride ions (ppm) in the cured sample. The conditions for ion chromatography here are as follows. • Device: ISC-2000 manufactured by Dionex • Detector: Conductivity detector • Tubing string: AS20 (4 mm Φ × 200 mm) • Column temperature: 30℃ • Flow rate: 1.0 ml / min Injection volume: 25 μl • Gradient setting: Set the KOH concentration to 5 mM at 0 minutes, 5 mM at 5 minutes, 30 mM at 15 minutes, and 55 mM at 20 minutes.

[0129] Regarding the suppression of crosstalk between wiring layers, the dielectric constant of the interlayer insulation layer (cured resin composition) at 10 GHz is preferably 3.6 or less, 3.2 or less, or 3.0 or less, and more preferably 2.8 or less, to further improve the reliability of electrical signals. This dielectric constant can also be 1.0 or greater. This dielectric constant can be determined using a test piece obtained by curing a 300 μm thick resin composition at 180°C for 2 hours, cutting it into pieces 60 mm long and 2 mm wide, and then vacuum drying it at 30°C for 6 hours.

[0130] The dielectric loss tangent of the interlayer insulation layer (a hardened resin composition) at 10 GHz is preferably 0.012 or less, 0.008 or less, or 0.005 or less. This dielectric loss tangent can also be 0.0001 or greater. This dielectric loss tangent can be calculated from the resonant frequency and unloaded Q value obtained at 10 GHz. The measurement temperature is 25°C. Devices for measuring the dielectric constant and dielectric loss tangent can be, for example, a vector network analyzer (manufactured by Keysight Technologies Inc., trade name: E8364B) or a 10 GHz resonator (manufactured by Kanto Electronics Application Development Co., Ltd., trade name: CP531), and the program can be CPMA-V2.

[0131] From the viewpoint of suppressing cracks during temperature cycling, the glass transition temperature of the cured resin composition is preferably above 120°C, and more preferably above 140°C to mitigate stress on wiring. For achieving low-temperature lamination, the glass transition temperature of the cured resin composition is preferably below 240°C, and more preferably below 220°C to suppress curing shrinkage. The glass transition temperature of the cured resin composition can also be 120°C~240°C, 120°C~220°C, 140°C~240°C, or 140°C~220°C.

[0132] The glass transition temperature of the cured resin composition was determined using a sample prepared by cutting a 300 μm thick cured resin composition (obtained by curing at 180 °C for 2 hours) into pieces 30 mm long and 4 mm wide. The measurement was performed using a dynamic viscoelasticity measuring apparatus manufactured by UBM, with a clamping distance of 20 mm, a frequency of 10 Hz, a heating rate of 5 °C / min, and a temperature range of 40 °C to 260 °C. The temperature at which tanδ represents the maximum value was recorded as the glass transition temperature.

[0133] From the viewpoint of reducing warping of the interlayer insulation in wiring, the elongation at break of the cured resin composition is, for example, 5% or more. From the viewpoint of mitigating stress on copper wiring, the elongation at break is preferably 10% or more. From the viewpoint of improving the temperature cycling reliability of the wiring laminate, the elongation at break is more preferably 15% or more. The elongation at break can also be 200% or less. The elongation at break of the cured resin composition can also be 5% to 200%, 10% to 200%, or 15% to 200%. The elongation at break can be measured using a sample prepared by cutting a 300 μm thick cured resin composition (obtained by curing the resin composition at 180°C for 2 hours) into a length of 30 mm and a width of 5 mm. The elongation at break can be measured using a small benchtop testing machine (manufactured by Shimadzu Corporation, trade name: EZ-S) set to a feed rate of 5 mm / min.

[0134] From the perspective of heat resistance reliability, the 5% weight reduction temperature of the cured resin composition is, for example, above 300°C. A 300 μm thick cured sample obtained by curing the resin composition at 180°C for 2 hours was used as a sample. The 5% weight reduction temperature of the first wiring interlayer insulation layer 17 was measured using a differential thermal thermogravimetric analyzer (manufactured by Hitachi High-Tech Science Co., Ltd., trade name: TG / DTA6300) under the conditions of heating rate: 10°C / min and nitrogen flow rate: 400 ml / min.

[0135] The storage elastic modulus of the cured resin composition at 40°C can also be 10 MPa~5 GPa.

[0136] Figure 1 is a schematic cross-sectional view of a semiconductor package having one embodiment of a semiconductor wiring stack. The semiconductor wiring stack disclosed herein is preferably a package configuration that can be used in interposers requiring the loading of dissimilar wafers.

[0137] As shown in Figure 1, the semiconductor package 100 is a semiconductor device including a substrate 1, a wiring stack 10 disposed on the substrate 1, and semiconductor wafers 2A and 2B mounted on the wiring stack 10. Semiconductor wafers 2A and 2B are respectively fixed to the wiring stack 10 by corresponding filler adhesives 3A and 3B, and are electrically connected to each other via surface wiring (not shown) disposed within the wiring stack 10. Furthermore, the substrate 1 is a sealed body formed by sealing semiconductor wafers 2C and 2D with electrodes 5A and 5B using an insulating material 4. Semiconductor wafers 2C and 2D within the substrate 1 can be connected to external devices via electrodes exposed from the insulating material 4. Electrodes 5A and 5B function, for example, as conductive circuits for electrically connecting the wiring stack 10 to external devices.

[0138] Each of the semiconductor wafers 2A to 2D may be, for example, a volatile memory such as a graphics processing unit (GPU), dynamic random access memory (DRAM), or static random access memory (SRAM), or a non-volatile memory such as flash memory; an RF chip, a silicon photonics chip, a microelectromechanical system (MEMS), or a sensor chip. Semiconductor wafers 2A to 2D may also have a TSV (Transient Viaduct). Each of the semiconductor wafers 2A to 2D may also be a wafer with stacked semiconductor elements; in this case, semiconductor elements stacked using TSVs may be used. The thickness of semiconductor wafers 2A and 2B is, for example, 200 μm or less. From the viewpoint of thinning the semiconductor package, the thickness of semiconductor wafers 2A and 2B is preferably 100 μm or less. Furthermore, from an operability viewpoint, the thickness of semiconductor wafers 2A and 2B is more preferably 30 μm or more. Semiconductor wafers 2A to 2D can be electrically connected to any wiring in the wiring stack 10.

[0139] The underfills 3A and 3B are, for example, capillary underfill (CUF), mold underfill (MUF), paste underfill (non-conductive paste, NCP), film underfill (non-conductive film, NCF), or photosensitive underfill. Underfills 3A and 3B are each composed primarily of a liquid-curing resin (e.g., epoxy resin). Additionally, the insulating material 4 is, for example, a curing resin with insulating properties.

[0140] Next, the wiring laminate 10 of this embodiment will be described in detail using FIG2. The wiring laminate 10 is a wiring substrate on which semiconductor elements are mounted. The shape of the wiring laminate 10 corresponds to the shape of the substrate 11 described later, and can be wafer-shaped (approximately circular when viewed from above) or panel-shaped (approximately rectangular when viewed from above).

[0141] The wiring stack 10 disposed on the substrate 11 shown in Figure 2 includes: a plurality of wiring layers 41, 42, each comprising: organic insulating layers 21, 22; copper wirings 13, 14 embedded in the organic insulating layers 21, 22; and barrier metal films 15, 16 disposed between the copper wirings 13, 14 and the organic insulating layers 21, 22; interlayer insulating layers 17, 18 adjacent to the wiring layers 41, 42; and through wirings 19 penetrating the organic insulating layers 21, 22 and the interlayer insulating layers 17, 18. The organic insulating layers 21, 22 and the interlayer insulating layers 17, 18 are alternately deposited on the substrate 11. A portion of the surface of the copper wirings 13, 14 is exposed on one of the main surfaces of the wiring layers 41, 42. Interlayer insulating layers 17, 18 are attached to the exposed surfaces of the copper wirings 13, 14. Interlayer insulation layers 17 and 18 are cured forms of the curable resin composition described in the embodiment. Organic insulation layers 21 and 22 may be layers formed of photosensitive insulating resin. Copper wiring may also be exposed on both main surfaces of the wiring layer, with interlayer insulation layers attached to the surfaces of the exposed copper wiring.

[0142] The substrate 11 serves as a support for the wiring laminate 10. The shape of the substrate 11 in top view is, for example, circular or rectangular. In the case of a circular shape, the substrate 11 has a diameter of, for example, 200 mm to 450 mm. In the case of a rectangular shape, one side of the substrate 11 has a diameter of, for example, 300 mm to 700 mm.

[0143] The substrate 11 may be, for example, a silicon substrate, a glass substrate, or a peelable copper foil. The substrate 11 may also be, for example, an add-on substrate, a wafer-level packaging substrate, a coreless board, a substrate manufactured by thermosetting a sealing material, or a substrate with a sealed or embedded chip. When using a silicon substrate or a glass substrate as the substrate 11, a temporary fixing layer (not shown) may be provided to temporarily fix the wiring laminate 10 to the substrate 11. In this case, the substrate 11 can be easily peeled off from the wiring laminate 10 by removing the temporary fixing layer. The peelable copper foil is a laminate consisting of a support, a release layer, and a copper foil stacked sequentially. In the peelable copper foil, the support corresponds to the substrate 11, and the copper foil may form part of the through wiring 19.

[0144] The organic insulating layer 21 (first organic insulating layer) includes a third organic insulating layer 23 located on the substrate 11 side and a fourth organic insulating layer 24 located on the second organic insulating layer 22 side. The first organic insulating layer 21 has a plurality of grooves 21a (first grooves) with corresponding copper wires 13 disposed thereon. The fourth organic insulating layer 24 has a plurality of openings corresponding to the grooves 21a. The surface of the third organic insulating layer 23 exposed through these openings forms the bottom surface of the inner surface of the grooves 21a. The side surfaces of the grooves 21a are formed by the fourth organic insulating layer 24.

[0145] The thicknesses of the third organic insulating layer 23 and the fourth organic insulating layer 24 are, for example, 0.5 μm to 10 μm. Therefore, the thickness of the first organic insulating layer 21 is, for example, 1 μm to 20 μm. By having a thickness of 1 μm or more, the first organic insulating layer 21 can help alleviate the stress of the wiring laminate 10, thereby improving the temperature cycling resistance of the wiring laminate 10. By having a thickness of 20 μm or less, warping of the wiring laminate 10 can be suppressed, for example, making it easier to expose the wiring when grinding the wiring laminate 10. From the viewpoint of forming a copper wiring 13 with a width of 3 μm or less by exposure and development, the thickness of the first organic insulating layer 21 is preferably 15 μm or less, and more preferably 10 μm or less.

[0146] Multiple slots 21a are provided in the first organic insulating layer 21 on the surface opposite to the substrate 11. In a cross-section along a direction orthogonal to the extending direction of the slot 21a, each slot 21a has a generally rectangular shape. Therefore, the inner surface of the slot 21a has a side surface and a bottom surface. In addition, the multiple slots 21a have a defined linewidth L and a space width S. The linewidth L and the space width S are, for example, 0.5 μm to 10 μm, preferably 0.5 μm to 5 μm, and more preferably 2 μm to 5 μm. From the viewpoint of achieving high-density transmission of the wiring laminate 10, the linewidth L is preferably 1 μm to 5 μm. The linewidth L and the space width S can be set to be the same or different from each other. The linewidth L is equivalent to the width of the slot 21a in the direction orthogonal to the extending direction of the slot 21a when viewed from above. The space width S is equivalent to the distance between adjacent slots 21a. The depth of the groove 21a is, for example, equivalent to the thickness of the fourth organic insulating layer 24.

[0147] The organic insulating layer 22 (second organic insulating layer) sandwiches the wiring interlayer insulating layer 17 (first wiring interlayer insulating layer) and is deposited on the first organic insulating layer 21. The second organic insulating layer 22 has a plurality of grooves 22a (second grooves) with corresponding copper wiring 14.

[0148] The thickness of the second organic insulating layer 22 is, for example, 1 μm to 10 μm. By having a thickness of 1 μm or more, the second organic insulating layer 22 helps to alleviate stress in the wiring laminate 10, thereby improving the temperature cycling resistance of the wiring laminate 10. By having a thickness of 10 μm or less, warping of the wiring laminate 10 can be suppressed, for example, making it easier to expose wiring during grinding of the wiring laminate 10. A plurality of openings corresponding to the grooves 22a are provided in a portion of the second organic insulating layer 22. The surface of the first interlayer insulation layer 17 exposed through these openings forms the bottom surface of the inner surface of the groove 22a. Each side of the groove 22a is formed by the second organic insulating layer 22. In this embodiment, the linewidth and space width of the plurality of grooves 22a are consistent with the linewidth L and space width S of the groove 21a.

[0149] The first organic insulating layer 21 with grooves 21a and the second organic insulating layer 22 with grooves 22a can be cured by heat treatment. The heat treatment can be performed, for example, using an oven. From the viewpoint of reducing residual stress in the wiring laminate 10, it is preferable to perform the heat treatment at, for example, below 200°C. From the viewpoint of production efficiency, it is preferable to set the heat treatment time to less than 3 hours.

[0150] The copper wiring 13 is disposed in the corresponding slot 21a as described above, and functions as a conductive path inside the wiring laminate 10. Therefore, the width of the copper wiring 13 is approximately the same as the line width L of the slot 21a, and the spacing between adjacent copper wiring 13 is approximately the same as the spatial width S of the slot 21a.

[0151] The copper wiring 14 is disposed within the corresponding slot 22a as described above, serving as a conductive path within the wiring laminate 10. Therefore, the width of the copper wiring 14 is approximately the same as the line width of the slot 22a, and the spacing between adjacent copper wirings 14 is approximately the same as the spatial width of the slot 22a. The copper wiring 14 contains the same metallic material as the copper wiring 13.

[0152] The barrier metal film 15 (first barrier metal film) is a metal film disposed to separate the copper wiring 13 from the first organic insulating layer 21 (i.e., the inner surface of the trench 21a). The first barrier metal film 15 is formed along the inner surface of the trench 21a to prevent copper from diffusing from the copper wiring 13 to the first organic insulating layer 21. Therefore, the first barrier metal film 15 contains a metallic material (e.g., titanium, chromium, tungsten, palladium, nickel, gold, tantalum, or an alloy containing these) that is difficult to diffuse into the organic insulating layer. The first barrier metal film 15 may contain one or more metals. From the viewpoint of adhesion to the inner surface of the trench 21a, the first barrier metal film 15 is preferably a titanium film or an alloy film containing titanium. When the first barrier metal film 15 is formed by sputtering, the first barrier metal film 15 is preferably a titanium film, a tantalum film, a tungsten film, a chromium film, or an alloy film containing at least any one of titanium, tantalum, tungsten, and chromium.

[0153] The thickness of the first barrier metal film 15 is less than half the width of the trench 21a and less than the depth of the trench 21a. From the viewpoint of preventing the copper wires 13 from conducting to each other and suppressing the increase in resistance of the copper wires 13, the thickness of the first barrier metal film 15 is, for example, 0.001 μm to 0.5 μm. From the viewpoint of preventing the diffusion of metal material within the copper wires 13, the thickness of the first barrier metal film 15 is preferably 0.01 μm to 0.5 μm. From the viewpoint of the flatness of the first barrier metal film 15 and increasing the amount of current flowing through the copper wires 13, the thickness of the first barrier metal film 15 is preferably 0.001 μm to 0.3 μm. Based on the above, the thickness of the first barrier metal film 15 is preferably 0.01 μm to 0.3 μm.

[0154] The second barrier metal film 16 is a metal film provided to separate the copper wiring 14 from the second organic insulating layer 22 (i.e., the inner surface of the trench 22a). The second barrier metal film 16 is a film formed along the inner surface of the trench 22a to prevent copper from diffusing from the copper wiring 14 to the second organic insulating layer 22. Therefore, like the first barrier metal film 15, the second barrier metal film 16 contains a metallic material that is difficult to diffuse into the organic insulating layer. Similar to the first barrier metal film 15, the thickness of the second barrier metal film 16 is less than half the width of the trench 22a and less than the depth of the trench 22a. Therefore, the thickness of the second barrier metal film 16 is, for example, 0.001 μm to 0.5 μm, preferably 0.01 μm to 0.5 μm or 0.001 μm to 0.3 μm, and most preferably 0.01 μm to 0.3 μm.

[0155] The first interlayer insulation layer 17 is an insulating film used to prevent copper from diffusing from the copper wiring 13 to the first organic insulating layer 21 and the second organic insulating layer 22. The first interlayer insulation layer 17 is provided between wiring layer 41 (first wiring layer) and wiring layer 42 (second wiring layer) to separate the copper wiring 13 from the second organic insulating layer 22. The first interlayer insulation layer 17 is in contact with the surface of the copper wiring 13 exposed on the main surface of the first wiring layer 41 opposite to the substrate 11. From the viewpoint of making the wiring laminate 10 thinner, the thickness of the first interlayer insulation layer 17 is, for example, 50 μm or less. From the viewpoint of preventing the copper wiring 13 from conducting to each other, the thickness of the first interlayer insulation layer 17 is, for example, 1 μm or more, preferably 10 μm or more. From the viewpoint of surface smoothness of the first interlayer insulation layer 17, the thickness of the first interlayer insulation layer 17 is preferably 30 μm or less. Details of the materials contained in the first interlayer insulation layer 17 and other properties of the first interlayer insulation layer 17 will be described later.

[0156] The second interlayer insulation layer 18 is an insulating film used to prevent copper from diffusing from the copper wiring 14 to the second organic insulating layer 22. The second interlayer insulation layer 18 is in contact with the surface of the copper wiring 14 exposed on the main surface of the second wiring layer 42 opposite to the substrate 11, and is disposed on the second wiring layer 42. The second interlayer insulation layer 18 contains the same material as the first interlayer insulation layer 17 and has the same characteristics as the first interlayer insulation layer 17.

[0157] The through wiring 19 is a wiring embedded in the through hole 31 that passes through the wiring layers 41, 42 and the insulation layers 17, 18 between the wiring layers, and functions as a connection terminal to external devices.

[0158] Next, the manufacturing method of the wiring laminate 10 of this embodiment will be described with reference to Figures 3(a) to 12(b). The wiring laminate 10 formed by the following manufacturing method is particularly suitable for configurations requiring miniaturization and multi-needle configuration. Furthermore, Figure 4(b) is an enlarged view of the main part of Figure 4(a). Similarly, Figures 5(b), 6(b), 7(b), 8(b), 9(b), 10(b), 11(b), and 12(b) are enlarged views of the main parts of the corresponding figures.

[0159] First, as a first step, as shown in FIG3(a), a bottom 19a of the through wiring is formed on the substrate 11. The bottom 19a of the through wiring can be formed by patterning a metal film formed on the substrate 11. In the first step, the metal film is formed, for example, by physical vapor deposition (PVD) methods such as coating, vacuum evaporation or sputtering, printing or spraying using metal paste, or various plating methods. In this embodiment, copper foil can be used as the metal film.

[0160] When a temporary fixing layer (not shown) is provided between the substrate 11 and the bottom 19a of the through wiring, the temporary fixing layer may contain, for example, a resin containing non-polar components such as polyimide, polybenzoxazole, silicon, or fluorine; a resin containing components that expand in volume or bubble upon heating or exposure to ultraviolet light (UV); a resin containing components that undergo cross-linking reactions upon heating or exposure to UV; or a resin that heats up upon light irradiation. Methods for forming the temporary fixing layer may include, for example, spin coating, spray coating, or lamination. From the viewpoint of achieving a high balance between operability and carrier peelability, the temporary fixing layer is preferably easily peeled off by external stimuli such as light or heat. From the viewpoint that the temporary fixing layer can be peeled off without remaining in the subsequently manufactured semiconductor wiring laminate 10, the temporary fixing layer is preferably a resin containing components that expand in volume upon heat treatment.

[0161] When a temporary fixing layer is provided between the substrate 11 and the bottom 19a of the through wiring, the bottom 19a of the through wiring can be formed of a peelable copper foil. In this case, the substrate 11 is equivalent to a support for the peelable copper foil, and the temporary fixing layer is equivalent to a release layer for the peelable copper foil.

[0162] Next, as a second step, as shown in FIG3(b), a third organic insulating layer 23 is formed on the substrate 11 to cover the bottom 19a of the through wiring. In the second step, for example, the third organic insulating layer 23 can be formed by attaching a film of photosensitive insulating resin to the substrate 11. The film of photosensitive insulating resin may be subjected to exposure treatment, development treatment, curing treatment, etc., as needed.

[0163] Secondly, as a third step, as shown in Figure 3(c), the first organic insulating layer 21 is formed by forming a fourth organic insulating layer 24 on the third organic insulating layer 23. In this third step, similarly to the second step, the fourth organic insulating layer can be formed by attaching a film containing a photosensitive insulating resin to the third organic insulating layer 23. The film containing the photosensitive insulating resin may undergo exposure treatment, development treatment, curing treatment, etc., as needed.

[0164] Next, as a fourth step, as shown in Figures 4(a) and (b), a plurality of grooves 21a are formed on the first organic insulating layer 21. In this fourth step, the plurality of grooves 21a are formed, for example, by laser ablation, photolithography, or imprinting. From the viewpoint of miniaturization of the grooves 21a and formation cost, photolithography is preferred. For example, the plurality of grooves 21a can be formed by exposing and developing the photosensitive insulating resin used to form the fourth organic insulating layer 24.

[0165] As a method for exposing the photosensitive insulating resin using photolithography, known methods such as projection exposure, contact exposure, and direct tracing exposure can be used. Alternatively, alkaline aqueous solutions such as sodium carbonate or tetramethyl ammonium hydroxide (TMAH) can be used to develop the photosensitive insulating resin.

[0166] In step 4, after forming multiple grooves 21a, the first organic insulating layer 21 can be heat-cured. In this case, for example, the heating temperature is set to 100°C to 200°C and the heating time is set to 30 minutes to 3 hours to heat-cur the first organic insulating layer 21.

[0167] Next, as a fifth step, as shown in Figures 5(a) and (b), a first barrier metal film 15 is formed on the first organic insulating layer 21 to cover the inner surface of the groove 21a. In this fifth step, the first barrier metal film 15 is formed, for example, by coating, PVD, printing or spraying using metal paste, or various plating methods. In the case of coating, the first barrier metal film 15 is formed by coating a palladium or nickel composite onto the first organic insulating layer 21 and then heating it. In the case of using metal paste, the first barrier metal film 15 is formed by coating a paste containing metal particles such as nickel and palladium onto the first organic insulating layer 21 and then sintering it. In this embodiment, the first barrier metal film 15 is formed by sputtering, which is one type of PVD method.

[0168] Next, as a sixth step, as shown in Figures 6(a) and (b), a copper layer 13A for forming copper wiring is formed on the first barrier metal film 15 by filling the trench 21a. In this sixth step, the copper layer 13A is formed, for example, by using metal paste or by plating the first barrier metal film 15 as a seed layer. The thickness of the copper layer 13A is preferably 0.5 to 3 times the thickness of the first organic insulating layer 21. When the thickness of the copper layer 13A is 0.5 times or more, there is a tendency to suppress the increase of surface roughness of the copper wiring 13 formed in subsequent steps. In addition, when the thickness of the copper layer 13A is 3 times or less, there is a tendency to suppress the warping of the copper layer 13A and to achieve good adhesion with respect to the first organic insulating layer 21.

[0169] Next, as a seventh step, as shown in Figures 7(a) and (b), the copper layer 13A is thinned to expose the first organic insulating layer 21. In this seventh step, the portion of the copper layer 13A outside the groove 21a and the portion of the first barrier metal film 15 not covering the groove 21a are removed mechanically or chemically. This exposes the first organic insulating layer 21 and thins the copper layer 13A, thereby forming a copper wiring 13 embedded in the groove 21a. This thinning process can also be a planarization process of the surface where the first organic insulating layer 21 and the copper wiring 13 are combined. In this case, the target portion of the copper layer 13A and the first barrier metal film 15 is removed by CMP or fly cutting, and the surface of the first organic insulating layer 21 is ground or polished to planarize it.

[0170] When CMP is used in step 7, the slurry used is, for example, a slurry containing alumina generally used for polishing resin, a slurry containing hydrogen peroxide and silicon dioxide used for polishing the first barrier metal film 15, and a slurry containing hydrogen peroxide and ammonium persulfate used for polishing the copper layer 13A. From the viewpoint of reducing costs and suppressing the expansion of surface roughness, it is preferable to use a slurry containing alumina to polish the first organic insulating layer 21, the first barrier metal film 15, and the copper layer 13A. When CMP is used, the cost tends to increase. In addition, when the first organic insulating layer 21, the first barrier metal film 15, and the copper layer 13A (copper wiring 13) are planarized at the same time, the different polishing speeds can cause depressions in the copper wiring 13, resulting in a tendency to significantly damage the flatness of the surface where the first organic insulating layer 21 and the copper wiring 13 are joined. Therefore, it is preferable to grind the first organic insulating layer 21, the first barrier metal film 15, and the copper layer 13A (copper wiring 13) by using a surface planer for rapid cutting.

[0171] Next, as step 8, as shown in Figures 8(a) and (b), a first wiring interlayer insulation layer 17 is formed to cover the copper wiring 13 within the groove 21a. In step 8, the first wiring interlayer insulation layer 17 is formed, for example, by spin coating, spray coating, bar coating, curtain coating, printing, or lamination. From the viewpoint of ease of operation, it is preferable to use a film-like resin composition to form the first wiring interlayer insulation layer 17. Furthermore, from the viewpoint of uniform film thickness of the first wiring interlayer insulation layer 17 and its ability to handle large-scale applications, it is preferable to form the first wiring interlayer insulation layer 17 by lamination. When forming the first wiring interlayer insulation layer 17 by lamination, the film-like resin composition is adhered to the first organic insulating layer 21, similar to steps 2 and 3. In this case, from the viewpoint of reducing residual stress, it is preferable to set the temperature to 150°C or below, and from the viewpoint of suppressing voids, it is preferable to set the temperature to 60°C or above.

[0172] In step 8, the first interlayer insulation layer 17 is preferably formed not only on the copper wiring 13 but also on the portion of the first barrier metal film 15 that connects with the side of the groove 21a. In this case, a portion of the copper wiring 13 (the side and bottom surfaces of the copper wiring 13 facing the inner surface of the groove 21a) is covered by the first barrier metal film 15, and the remaining portion of the copper wiring 13 (the upper surface of the copper wiring 13) is covered by the first interlayer insulation layer 17. The copper wiring 13 is covered without gaps by the first barrier metal film 15 and the first interlayer insulation layer 17.

[0173] Next, as a ninth step, as shown in Figures 9(a) and (b), a second organic insulating layer 22 with grooves 22a is formed on the first wiring interlayer insulating layer 17. In the ninth step, firstly, similar to the third step, a film of photosensitive insulating resin is attached to the first wiring interlayer insulating layer 17. Furthermore, a plurality of grooves 22a are formed on the attached film of photosensitive insulating resin. In the ninth step, the grooves 22a are formed using the same method as the grooves 21a described in the fourth step. In the ninth step, from the viewpoint of preventing the diffusion of copper constituting the copper wiring 13, it is preferable not to perform a development process on the second organic insulating layer 22.

[0174] Next, as a 10th step, as shown in Figures 10(a) and (b), a second barrier metal film 16 and a copper layer 14A for forming copper wiring are sequentially formed on the second organic insulating layer. In the 10th step, firstly, using the same method as in step 5, the second barrier metal film 16 is formed on the second organic insulating layer 22 in a manner that covers the inner surface of the trench 22a. Moreover, using the same method as in step 6, the copper layer 14A is formed on the second barrier metal film 16 in a manner that fills the trench 22a.

[0175] Next, as in step 11, as shown in Figures 11(a) and (b), the copper layer 14A is thinned so that the second organic insulating layer 22 is exposed. In step 11, the portion of the copper layer 14A outside the trench 22a and the portion of the second barrier metal film 16 not covering the trench 22a are removed mechanically or chemically using the same method as in step 7. This exposes the second organic insulating layer 22 and thins the copper layer 14A, thereby forming a copper wiring 14 embedded in the trench 22a.

[0176] Next, as a 12th step, as shown in Figures 12(a) and (b), a second wiring interlayer insulation layer 18 is formed to cover the copper wiring 14 within the groove 22a. In this 12th step, the second wiring interlayer insulation layer 18 is formed on the second organic insulating layer 22 using the same method as in step 8. In this 12th step, the second wiring interlayer insulation layer 18 is preferably formed not only on the copper wiring 14 but also on the portion of the second barrier metal film 16 that is in contact with the side of the groove 22a. In this case, the side and bottom surfaces of the copper wiring 14 are covered by the second barrier metal film 16, and the upper surface of the copper wiring 14 is covered by the second wiring interlayer insulation layer 18. The copper wiring 14 is covered without gaps by the second barrier metal film 16 and the second wiring interlayer insulation layer 18.

[0177] Next, as a 13th step, as shown in FIG13(a), a through-hole 31 is formed penetrating the first organic insulating layer 21, the first wiring interlayer insulating layer 17, the second organic insulating layer 22, and the second wiring interlayer insulating layer 18. As a method for forming the through-hole 31, a laser can be used, for example. Examples of lasers include carbonate lasers, UV lasers, YAG lasers, and excimer lasers. Preferably, after forming the through-hole 31, the inside of the through-hole 31 is cleaned using known methods such as desmearing treatment.

[0178] Next, as a 14th step, as shown in FIG13(b), a metal material is filled into the through-hole 31 to form a conductive portion 19b inside the through-hole, thereby forming a through-wire 19 having a bottom 19a and a conductive portion 19b inside the through-hole. In the 14th step, the conductive portion 19b inside the through-hole is formed, for example, by PVD or various plating methods. Examples of metal materials include copper, nickel, and tin. The wiring laminate 10 shown in FIG2 is manufactured by the above steps. If a temporary fixing layer is provided, the wiring laminate 10 can also be peeled off from the substrate 11.

[0179] The wiring laminate 10 manufactured by the above-described manufacturing method exhibits a moisture absorption rate of less than 1% by mass after being placed in an environment of 130°C and 85% relative humidity for 2 hours. This results in extremely low moisture content in the wiring laminate. Consequently, the diffusion of copper into the wiring laminate caused by the reaction between water and copper within the wiring laminate is effectively suppressed. As a result, the insulation properties of the wiring laminate are well maintained, and short circuits between copper wires are suppressed, thus significantly improving the insulation reliability of the wiring laminate 10.

[0180] By mounting multiple semiconductor wafers on the wiring stack 10 of this embodiment, a semiconductor device formed by integrating semiconductor wafers can be provided with good yield.

[0181] This disclosure is not limited to the described embodiments, and appropriate modifications may be made without departing from its spirit. For example, a resin layer containing a photosensitive insulating resin, a wiring interlayer insulating layer, or an additive layer may also be formed between the first organic insulating layer 21 and the substrate 1.

[0182] A resin layer containing photosensitive insulating resin, an interlayer insulation layer, an additive layer, and a filler can be formed on the first interlayer insulation layer 17. Alternatively, copper wires or bumps can be formed to replace the second organic insulation layer 22 and the copper wires 14. In addition, through holes for embedding metal material to connect the copper wires 13 and 14 can be provided in the first interlayer insulation layer 17.

[0183] Alternatively, a resin layer containing photosensitive insulating resin, an interlayer insulation layer, an additive layer, a filler, or other resin layers can be formed on the second interlayer insulation layer 18. Copper wiring or bumps can also be formed. In addition, through-holes for connecting copper wiring 14 and semiconductor wafers can be provided in the second interlayer insulation layer 18. [Example]

[0184] The present invention will be further described in detail by way of the following embodiments, but the present invention is not limited to these examples.

[0185] (Example 1) The test samples for evaluation shown in Figures 14(a) and (b) are prepared as follows. First, a photosensitive insulating resin film 52 with a thickness of 3 μm is attached to a silicon wafer 51 with a thickness of 150 mm. The photosensitive insulating resin film 52 is formed as follows. First, a photosensitive insulating resin is obtained by mixing cresol phenolic varnish resin (manufactured by Asahi Organic Materials Co., Ltd., trade name: TR-4020G, 100 parts by weight), 1,3,4,6-tetra(methoxymethyl)glycidyl urea (30 parts by weight), trimethylolpropane triglycidyl ether (40 parts by weight), triaryl strontium salt (manufactured by San-Apro Co., Ltd., trade name: CPI-310B, 8 parts by weight), and methyl ethyl ketone (100 parts by weight). Next, the obtained photosensitive insulating resin was coated onto a polyethylene terephthalate film (manufactured by Teijin DuPont Film Co., Ltd., trade name: A-53), and dried in an oven at 90°C for 10 minutes to obtain a photosensitive insulating resin film 52 with a thickness of 3 μm.

[0186] Next, the photosensitive insulating resin film 52 attached to the silicon wafer 51 is subjected to exposure, heat treatment, development, and heat curing in sequence. Next, a photosensitive insulating resin film 53 with a thickness of 3 μm, formed similarly to the film 52, is attached to the photosensitive insulating resin film 52. Next, after the attached photosensitive insulating resin film 53 is exposed to a photomask, it is subjected to heat treatment, development, and heat curing in sequence. This patterning of the photosensitive insulating resin film 53 forms first grooves 53a and second grooves 53b in a comb-like, interlocking manner, a first connecting portion 53c connecting the first grooves 53a to each other, and a second connecting portion 53d connecting the second grooves 53b to each other. The width of the first groove 53a and the width of the second groove 53b are each set to 5 μm. These widths correspond to the linewidth L of the wiring described later. In addition, the distance (space width S) between adjacent first groove 53a and second groove 53b is set to 5 μm, and the length of each groove is set to 1 mm.

[0187] Next, a barrier metal film 54 containing titanium with a thickness of 0.05 μm is formed on the photosensitive insulating resin film 53 by sputtering. Next, a copper layer is formed by electroplating, in which the barrier metal film 54 is used as a seed layer, to fill the first groove 53a, the second groove 53b, the first connecting portion 53c, and the second connecting portion 53d. Next, a portion of the copper layer and the inner surface of the barrier metal film 54 that does not cover the first groove 53a, the second groove 53b, the first connecting portion 53c, and the second connecting portion 53d are ground by using a rapid cutting method of a surface leveling machine. This forms a first wiring 55a embedded in the first groove 53a, a second wiring 55b embedded in the second groove 53b, a first connecting wiring 55c embedded in the first connecting portion 53c, and a second connecting wiring 55d embedded in the second connecting portion 53d. An automatic surface leveling machine (manufactured by DISCO Corporation, trade name "DAS8930") is used as the surface leveling machine. Furthermore, in the grinding using the rapid cutting method, the feed rate is set to 1 mm / s, and the spindle speed is set to 2000 min⁻¹.

[0188] Next, a 10 μm thick curable film is applied so that at least a portion of the first connecting wire 55c and a portion of the second connecting wire 55d are exposed, and the curable film is heat-cured to form an interlayer insulation layer 57. The curable film is applied so as to at least bury the first wire 55a and the second wire 55b. Material A, as described below, is used as the curable film.

[0189] <Material A> First, to synthesize a thermoplastic resin with siloxane chains, 25 g of "BMI-3000" (manufactured by Designer Molecules Inc., trade name), 25 g of 2,2-bis(4-(4-maleiminephenoxy)phenyl)propane (manufactured by Yamato Chemical Co., Ltd., trade name: BMI-4000), and 150 g of toluene were placed in a flask and stirred for 20 minutes. Next, 16.4 g of silicone diamine (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: KF-8010) was added to the flask, and the mixture was heated to 130°C using an oil bath. The reaction was carried out by stirring for 3 hours from the start of reflux, and then cooled to room temperature by air cooling to form a solid thermoplastic resin with silicone chains. Next, 50 g of a thermosetting elastomer (manufactured by Asahi Kasei Corporation, trade name: Tuftec M1911) dissolved in toluene (based on solids), 50 g of the aforementioned silicone-chain-containing thermoplastic resin (based on solids), and 2 g of a curing agent (manufactured by Nippon Oil Co., Ltd., trade name: Perhexyne 25B) were prepared. The mixture was stirred for 30 minutes to uniformly disperse the preparation, resulting in a varnish of a resin composition for forming an interlayer insulation layer with a non-volatile content adjusted to 20%. The obtained varnish of the resin composition was applied to a PET film (38 μm thick, trade name: NR-1) that had been demolded using a benchtop coater. The thickness of the coating was adjusted using a coater to achieve a dry thickness of 10 μm. Next, the coating of the resin composition was dried at 130°C for 10 minutes, forming a curable film (material A) on the PET film. Furthermore, the PET film is removed, and the hardened film (material A) is used to form the wiring interlayer insulation layer 57. The wiring interlayer insulation layer 57 (the hardened form of material A) of Example 1 has a moisture absorption rate of less than 1.0% by mass, a chloride ion concentration of less than 3 ppm, an elongation at break of 150%, and a storage modulus of elasticity of 60 MPa at 40°C.

[0190] Next, returning to Figures 14(a) and (b), a 3 μm thick photosensitive insulating resin film 58, formed similarly to the photosensitive insulating resin film 52, is attached to the interlayer insulating layer 57. Furthermore, the photosensitive insulating resin film undergoes exposure treatment, development treatment, and heat curing treatment. This forms the evaluation sample 50 shown in Figures 14(a) and (b). In this evaluation sample 50, the first wirings 55a are interconnected by first connecting wirings 55c, and the first wirings 55a are covered by a barrier metal film 54 and the interlayer insulating layer 57. Additionally, the second wirings 55b are interconnected by second connecting wirings 55d, and the second wirings 55b are also covered by a barrier metal film 54 and the interlayer insulating layer 57.

[0191] To confirm the insulation reliability of the test specimen 50 used for evaluation, a Highly Accelerated Stress Test (HAST) was performed as described below. In this test, a voltage of 3.3 V was applied to the first connection wiring 55c and the second connection wiring 55d under conditions of 85% humidity and 130°C, and the circuit was left to stand for a specified time. The change in insulation between the first wiring 55a and the second wiring 55b over time was then measured. In this test, if the resistance value between the first wiring 55a and the second wiring 55b is 1 × 10⁶ Ω or higher after 200 hours from the start of the test, it is rated A; if it is less than 1 × 10⁶ Ω before 200 hours from the start of the test, it is rated B. The results of the HAST test of Example 1 are shown in Table 1 below.

[0192] (Example 2) Except that the linewidth L and space width S were set to 3 μm, the same procedure as in Example 1 was followed to form the test specimen 50 for evaluation, and the high acceleration lifetime test was performed. The results of the high acceleration lifetime test of Example 2 are shown in Table 1 below.

[0193] (Example 3) Except that the linewidth L and space width S were set to 2 μm, the same procedure as in Example 1 was followed to form the test specimen 50 for evaluation, and the high acceleration lifetime test was performed. The results of the high acceleration lifetime test of Example 3 are shown in Table 1 below.

[0194] (Example 4) Except for using material B as a curable film for forming the interlayer insulation layer 57 of the wiring, the same procedure as in Example 2 was followed to form the test and evaluation specimen 50. The high acceleration lifetime test was performed on the test and evaluation specimen 50. The results of the high acceleration lifetime test of Example 4 are shown in Table 1 below.

[0195] <Material B> First, to synthesize a thermoplastic resin with siloxane chains, 8.17 g of 1,4-butanediol bis(3-aminopropyl) ether (manufactured by Tokyo Chemical Industry Co., Ltd., trade name: B-12), 21.65 g of polyoxypropylene diamine (manufactured by BASF Japan Co., Ltd., trade name: D-400), 8.6 g of silicone diamine (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: KF-8010), and 250 g of N-methyl-2-pyrrolidone (NMP) as a solvent were added to a 500 ml flask equipped with a stirrer, thermometer, and nitrogen purging device (nitrogen inlet tube). The mixture was stirred to dissolve the diamines in the solvent. Next, a reflux condenser with a moisture receiver was installed in the flask, nitrogen was introduced, and the temperature was raised to 180°C. The mixture was then maintained at 180°C for 5 hours to remove water and allow the reaction to proceed. The solution obtained in the manner described was cooled to room temperature. Next, 50 g of polybutadiene resin (manufactured by CRAY VALLEY, trade name: Ricon 130MA8) dissolved in NMP (based on solids), 50 g of the aforementioned thermoplastic resin with siloxane bonds (based on solids), 2 g of hardener (manufactured by Nippon Oil Co., Ltd., trade name: Perhexyne 25B), and 1 g of G8009L (manufactured by Daiichi Kogyo Pharmaceutical Co., Ltd., trade name) were prepared and stirred for 30 minutes to form a varnish of the resin composition for forming an interlayer insulation layer. The obtained varnish of the resin composition was applied to a PET film (38 μm thick, trade name: NR-1) that had been demolded using a benchtop coater. The film thickness of the resin composition coating was adjusted using a coater to achieve a dry thickness of 10 μm. Next, the resin composition coating is dried by heating at 120°C for 20 minutes, and a curable film (material B) is formed on the PET film. Then, the PET film is removed, and the curable film (material B) is used to form the wiring interlayer insulation layer 57. The wiring interlayer insulation layer 57 (cured form of material B) of Example 4 has a moisture absorption rate of 1.0% by mass or less, a chloride ion concentration of 3 ppm or less, an elongation at break of 70%, and a storage modulus of elasticity of 180 MPa at 40°C.

[0196] (Example 5) Except that the linewidth L and space width S were set to 2 μm, the same procedure as in Example 4 was followed to form the test specimen 50 for evaluation, and the high acceleration lifetime test was performed. The results of the high acceleration lifetime test of Example 5 are shown in Table 1 below.

[0197] (Example 6) Except for using material C as a curable film for forming the interlayer insulation layer 57 of the wiring, the same procedure as in Example 2 was followed to form the test and evaluation specimen 50. The high acceleration lifetime test was performed on the test and evaluation specimen 50. The results of the high acceleration lifetime test of Example 6 are shown in Table 1 below.

[0198] <Material C> First, to synthesize the thermoplastic resin, 10.3 g of 2,2-bis(4-(4-aminophenoxy)phenyl)propane, 4.1 g of 1,4-butanediol bis(3-aminopropyl) ether (manufactured by Tokyo Chemical Industry Co., Ltd., trade name: B-12), and 101 g of NMP were added to a flask equipped with a stirrer, thermometer, and nitrogen purging device. Next, 20.5 g of 1,2-(extrinyl)bis(triphenyltrihydric anhydride) was added to the flask, and the mixture was stirred at room temperature for 1 hour. Then, a reflux condenser with a moisture receiver was installed in the flask, nitrogen was introduced, and the temperature was raised to 180°C. This temperature was maintained at 180°C for 5 hours to remove water and allow the reaction to proceed. The solution obtained in this manner was cooled to room temperature. Next, 50 g of polybutadiene resin (manufactured by CRAY VALLEY, trade name: Ricon 130MA8) dissolved in NMP, 50 g of the aforementioned thermoplastic resin, 2 g of hardener (manufactured by Nippon Yu Co., Ltd., trade name: Perhexyne 25B), 10 g of epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: NC3000H) dissolved in NMP, 1 g of G8009L (manufactured by Daiichi Kogyo Pharmaceutical Co., Ltd., trade name), and 70 g of silica slurry (manufactured by Admatechs; trade name: SC2050-KNK) were mixed and stirred for 30 minutes in a uniformly dispersed manner to form a varnish of resin composition for forming an interlayer insulation layer. The obtained resin composition varnish was applied to a PET film (38 μm thick, trade name: NR-1) that had been demolded using a benchtop coater. The film thickness of the resin composition coating was adjusted using a coater to achieve a thickness of 10 μm after drying. Next, the resin composition coating was dried by heating at 120°C for 20 minutes, forming a hardened film (material C) on the PET film. Then, the PET film was removed, and the hardened film (material C) was used to form the wiring interlayer insulation layer 57. The wiring interlayer insulation layer 57 (the hardened form of material C) of Example 6 has a moisture absorption rate of 1.0% by mass or less, a chloride ion concentration of 5 ppm or less, an elongation at break of 3%, and a storage modulus of elasticity of 11 GPa at 40°C.

[0199] (Comparative Example 1) Except for using material D to form the interlayer insulation layer 57, the test specimen 50 for measurement and evaluation was formed in the same manner as in Example 1. The specimen was exposed to the attached material D using a high-precision parallel exposure machine (manufactured by ORC Corporation, trade name: EXM-1172-B-∞) at an exposure amount of 500 mJ / cm², followed by heat curing. The high-acceleration lifetime test was then performed on the test specimen 50. The results of the high-acceleration lifetime test of Comparative Example 1 are shown in Table 1 below.

[0200] <Material D> Material D is a 10 μm thick film formed from the same photosensitive insulating resin as film 52. The cured material D has a moisture absorption rate of 2.0% by mass and a chloride ion concentration of 8.6 ppm.

[0201] (Comparative Example 2) Except that the linewidth L and space width S were set to 2 μm, the same procedure as in Comparative Example 1 was followed to form the test specimen 50 for evaluation, and the high acceleration lifetime test was performed. The results of the high acceleration lifetime test of Comparative Example 2 are shown in Table 1 below.

[0202] (Comparative Example 3) Except for using material E to form the interlayer insulation layer 57 and setting the line width L and space width S to 3 μm, the same procedure as in Comparative Example 1 was followed to form the test specimen 50 for evaluation. The high acceleration life test was performed on the test specimen 50. The results of the high acceleration life test of Comparative Example 3 are shown in Table 1 below.

[0203] <Material E> Material E was manufactured using FZ-2700GA (manufactured by Hitachi Chemical Co., Ltd., trade name). The cured material of Material E has a moisture absorption rate of 1.3% by mass and a chloride ion concentration of 6.3 ppm.

[0204] (Comparative Example 4) Except that material F was used as the curable film for forming the interlayer insulation layer 57 of the wiring, and the line width L and space width S were set to 3 μm, the same procedure as in Comparative Example 1 was followed to form the test evaluation sample 50. The high acceleration lifetime test was performed on the test evaluation sample 50. The results of the high acceleration lifetime test of Comparative Example 4 are shown in Table 1 below.

[0205] <Material F> First, to synthesize the thermoplastic resin, 2.16 g of 5,5'-methylenebis(o-aminobenzoic acid), 15.13 g of aliphatic ether diamine (manufactured by BASF Japan, trade name: D-400), 1.63 g of 1,1,3,3-tetramethyl-1,3-bis(4-aminophenyl)disiloxane (manufactured by Shin-Etsu Chemical Industry Co., Ltd., trade name: LP-7100), and 115 g of NMP were prepared in a flask equipped with a stirrer, thermometer, and nitrogen purging device. Then, 16.51 g of oxydiphthalic anhydride (ODPA) was added to the flask, and the mixture was stirred at room temperature for 1 hour. Nitrogen gas was then purged into the flask, and the temperature was raised to 180°C and maintained at 180°C for 5 hours to remove water and allow the reaction to proceed. The solution obtained in this manner was cooled to room temperature. A varnish of the resin composition was prepared by mixing 30 g of epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: NC3000H) dissolved in NMP (based on solids), 50 g of the aforementioned thermoplastic resin (based on solids), and 1 g of 2P4MHZ (manufactured by Shikoku Kasei Corporation, trade name) as a hardener, and stirring for 30 minutes to uniformly disperse the resin composition. The obtained varnish of the resin composition was applied to a PET film (38 μm thick, trade name: NR-1) that had been demolded using a benchtop coater. The coating of the resin composition was adjusted to a thickness of 10 μm after drying using a coater. Next, the coating of the resin composition was dried by heating at 120°C for 20 minutes, and a hardened film (material F) was formed on the PET film. Then, the PET film was removed, and the hardened film (material F) was used to form an interlayer insulation layer for wiring. The moisture absorption rate of the interlayer insulation layer (a hardened version of material F) in Comparative Example 4 was 1.2% by mass, and the chloride ion concentration was less than 5 ppm.

[0206] [Table 1] Line width L (μm) Spatial width S (μm) Interlayer insulation layer 57 High acceleration life test Example 1 5 5 Y Material A A Example 2 3 3 Y Material A A Example 3 2 2 Y Material A A Example 4 3 3 Y Material B A Example 5 2 2 Y Material B A Example 6 3 3 Y Material C A Comparative Example 1 5 5 N Material D B Comparative Example 2 2 2 N Material D B Comparative Example 3 3 3 N Material E B Comparative Example 4 3 3 N Material F B

[0207] In Table 1, a moisture absorption rate of 1.0% by mass or less for the interlayer insulation layer 57 is indicated as "Y", and a moisture absorption rate exceeding 1.0% by mass is indicated as "N". According to Table 1, the results of the high-acceleration life tests for Examples 1 to 6 are all rated A, while the results of the high-acceleration life tests for Comparative Examples 1 to 4 are all rated B. From these results, it can be seen that the insulation reliability of the evaluation sample 50 varies greatly depending on the presence or absence of the interlayer insulation layer 57 with a moisture absorption rate of 1.0% by mass or less.

[0208] Figure 15 is a graph showing the results of the high-acceleration life test of Example 3 and Comparative Example 2. In Figure 15, the horizontal axis represents time, and the vertical axis represents the resistance value between the first wiring 55a and the second wiring 55b. In Figure 15, data 61 is the test result of Example 3, and data 62 is the test result of Comparative Example 2.

[0209] As shown in Figure 15, in Example 3, after 300 hours from the start of the test, the resistance value between the first wiring 55a and the second wiring 55b also showed a value of 1×10⁷ Ω or more. On the other hand, in Comparative Example 2, the resistance value decreased sharply after about 20 hours from the start of the test, and was less than 1×10⁷ Ω.

[0210] Figure 16(a) is a diagram of the test specimen 50 used for evaluation in Example 3 after the high acceleration life test, and Figure 16(b) is a diagram of the test specimen 50 used for evaluation in Comparative Example 2 after the high acceleration life test. As shown in Figure 16(b), it was confirmed in Comparative Example 2 that at least the first wiring 55a and the second wiring 55b were corroded due to certain major factors. On the other hand, as shown in Figure 16(b), no obvious corrosion was found in the wiring in Example 3.

[0211] (Examples 7 to 13) The following components were stirred at 25°C for at least 30 minutes to obtain the resin composition (varnish) by filtering through a #200 nylon sieve (pore size: 75 μm) to form the composition shown in Table 1.

[0212] (A-1) Composition: Maleimine compounds represented by the following formula (a mixture of n=1~10, weight average molecular weight: about 15000~20000) [Chemistry 21]

[0213] (A-2) Ingredients: A mixture of maleimine compounds represented by the following formula. [Chemistry 22] [Chemistry 23]

[0214] (B) Ingredients: Compounds containing (meth)acrylic groups (manufactured by Shin-Nakamura Chemical Industry Co., Ltd., trade name: A-DCP) (C) Composition: Photoradical polymerization initiator (manufactured by BASF, trade name: Irgacure 907) (D-1) Composition: Silane coupling agent with epoxy groups (manufactured by Shin-Etsu Chemical Industry Co., Ltd., trade name: X-12-984S) (D-2) Ingredients: Epoxy-based silane coupling agent (manufactured by Shin-Etsu Chemical Industry Co., Ltd., trade name: KBM-403)

[0215] The resin compositions (varnishes) of each embodiment were evaluated as follows. The results are shown in Table 2.

[0216] <Evaluation of Dielectric Properties (Dielectric Constant: Dk, Dielectric Loss Tangent: Df)> For the evaluation of dielectric properties, a varnish was applied to a copper foil using a benchtop coater to a dried thickness of 50 μm, and then allowed to dry to obtain a resin film (semi-cured). Next, the obtained resin film (semi-cured) was irradiated with UV light at 2000 mJ / cm². A resin film was then formed and deposited on the prepared resin film, with a film thickness of 300 μm. Finally, the copper foil serving as the support was removed by physical peeling or etching to obtain the resin film for evaluation. Furthermore, a test piece was prepared by cutting the resin film into sections 60 mm long, 2 mm wide, and 0.3 mm thick, and the dielectric properties were measured using the cavity resonator perturbation method. The measuring instrument was an Agilent Technologies E8364B vector network analyzer, and the cavity resonator was a Kanto Electronics Application Development Co., Ltd. CP531 (10 GHz with resonator) was used. The measurement program was CPMA-V2. The conditions were set to a frequency of 10 GHz and a measurement temperature of 25°C.

[0217] <Determination of moisture absorption rate> A varnish was applied to a silicon wafer (6-inch diameter, 400 μm thickness) using a spin coater and dried at 90°C for 5 minutes to form a resin layer. The layer was then exposed to 2000 mJ / cm² and hardened before being heated at 180°C for 1 hour to prepare a sample. This sample was then placed in a constant temperature and humidity bath (Espec Corporation, trade name: EHS-221MD) set at 85% relative humidity and 130°C for 200 hours. After the temperature and humidity bath was lowered to 50°C, the sample was removed, and a portion of the resin was shaved off the silicon wafer. The shaved resin was measured using a differential thermal gravimetric analyzer (Hitachi High-Tech Science Corporation, trade name: TG / DTA6300) at a heating rate of 10°C / min, a nitrogen flow rate of 400 mL / min, and a temperature range of 25°C to 150°C. The weight reduction rate at 150°C is calculated as the moisture absorption rate.

[0218] <Determination of Elongation> Using a small benchtop testing machine (manufactured by Shimadzu Corporation, trade name: EZ-S), the elongation at break of a sample obtained by cutting a resin film prepared using the same method as described above into pieces 30 mm long and 5 mm wide was measured at a feed rate of 5 mm / min.

[0219] <Evaluation of the Formative Characteristics of Micro-wiring> A varnish was applied to a silicon wafer (6 inches in diameter and 400 μm thick) by spin coating, and then heated and dried at 90°C for 5 minutes to form a resin film on the silicon wafer. The spin coating conditions were then adjusted so that the dried resin film thickness was 5 μm. Next, negative pattern masks with line / space (L / S (μm / μm)) of 200 / 200, 100 / 100, 80 / 80, 60 / 60, 50 / 50, 40 / 40, 30 / 30, 20 / 20, 10 / 10, 7 / 7, 5 / 5, 4 / 4, and 3 / 3 and aperture diameters of 50 μm, 40 μm, 30 μm, 20 μm, 10 μm, 7 μm, 5 μm, 4 μm, and 3 μm were applied and exposed using a high-precision parallel exposure machine (manufactured by ORC, trade name: EXM-1172-B-∞) at 1000 mJ / cm². Then, additional heating at 100°C for 1 min was applied to obtain the sample. The obtained sample was shaken and immersed in cyclopentanone at room temperature for 60 seconds, then rinsed with cyclopentanone and immersed in isopropanol at room temperature for 5 seconds. Afterwards, compressed air was blown to evaporate the isopropanol. Micro-wiring integrity was assessed using a metal microscope to examine for resin film peeling on the wafer, resin film cracks, the presence or absence of cracks at the pattern ends, and the presence or absence of residue at the bottom of the pattern after resin development. The minimum L / S and via diameter for which these defects could not be identified are shown in Table 2.

[0220] <b-HAST resistance> The pattern is formed in the same manner as in the high-acceleration life test. Then, plating is performed using electroless copper plating, electrolytic copper plating, etc., and the surface is planarized using CMP. Furthermore, the mask size is adjusted to have an L / S (μm / μm) ratio of 3 / 3 or 5 / 5. Next, a varnish layer was applied to the obtained wiring by spin coating and dried at 90°C for 5 minutes. During spin coating, polyimide tape was adhered to wiring sections 55c and 55d to prevent resin from being coated. The polyimide tape was peeled off after UV curing. Spin coating conditions were adjusted to achieve a resin film thickness of 5 μm. The resin film was cured by irradiation with 1000 mJ / cm² UV light and heating at 180°C for 1 hour. Furthermore, a resin layer, fabricated using the same method except for pattern formation, was established between the substrate wafer (6-inch diameter, 400 μm thickness) and the wiring layer. For the obtained wiring, a voltage of 3.3 V was applied to the first connecting wiring 55c and the second connecting wiring 55d under conditions of 85% humidity and 130°C, and the wiring was left to stand for a specified time. The change in insulation between the first wiring 55a and the second wiring 55b over time was then measured. In this test, wirings with a resistance value of 1 × 10⁶ Ω or higher between the first wiring 55a and the second wiring 55b after 300 hours were rated as "A" (with b-HAST resistance), while those not described were rated as "B" (without b-HAST resistance).

[0221] [Table 2] Example 7 8 9 10 11 12 13 Composition (parts by weight) (A-1) 100 100 90 80 - - - (A-2) - - - - 100 90 80 (B) - - 10 20 - 10 20 (C) 5 5 5 5 5 5 5 (D-1) 0.3 - 0.3 0.3 0.3 0.3 0.3 (D-2) - 0.3 - - - - - Dielectric properties Dk 2.2 2.2 2.3 2.4 2.3 2.3 2.4 Df 0.0020 0.0020 0.0030 0.0040 0.0025 0.0035 0.0045 Moisture absorption rate weight% 0.3 0.3 0.4 0.5 0.3 0.4 0.5 elongation % 60 60 55 50 45 40 35 Micro-wiring formation L / S(μm) 5 / 5 5 / 5 5 / 5 5 / 5 5 / 5 5 / 5 5 / 5 Through hole (μm) 5 5 5 5 5 5 5 resistance to b-HAST 3 / 3 A A A A A A A 5 / 5 A A A A A A A

[0222] 1, 11: substrate 2A~2D: Semiconductor wafers 3A, 3B: Filler adhesive 4: Insulation materials 5A, 5B: Electrodes 10: Semiconductor wiring laminate 13, 14: Copper wiring 13A, 14A: Copper layer 15: The first barrier metal film 16: 2nd barrier metal film 17: First wiring layer interlayer insulation 18: Second wiring layer interlayer insulation 19: Through-wiring 19a: Bottom 19b: Conductive part inside the through hole 21: First organic insulating layer 21a, 53a: First groove section 22: Second organic insulating layer 22a, 53b: Second groove section 23: Third organic insulating layer 24: Fourth organic insulating layer 31: Through hole 41: First wiring layer 42: Second wiring layer 50: Samples for determination and evaluation 51: Silicon wafer 52, 53, 58: Photosensitive insulating resin film 53c: First connecting part 53d: Second connecting part 54: Barrier metal film 55a: Wiring 1 55b: Wiring 2 55c: First connection wiring 55d: Second connection wiring 57: Interlayer insulation layer of wiring 61, 62: Data 100: Semiconductor Packaging L: Line width S: Spacious

Claims

1. A resin composition comprising a curable resin, a compound having a (meth)acrylic group, a curing agent, and a thermoplastic resin, wherein the curable resin has at least two maleimine groups, a divalent hydrocarbon group, and a divalent organic group containing at least two amide bonds, and the cured resin composition has a moisture absorption rate of less than 1% by mass after being placed at 130°C and 85% relative humidity for 200 hours.

2. The resin composition as claimed in claim 1, wherein the divalent hydrocarbon group comprises a chain-like alkyl group having a main chain having four or more carbon atoms.

3. The resin composition as claimed in claim 1 or claim 2, wherein the divalent hydrocarbon group has 8 or more carbon atoms.

4. The resin composition as claimed in claim 1 or claim 2, wherein the divalent organic group is a group represented by the following formula (I), [where R1 represents a tetravalent organic group].

5. The resin composition as claimed in claim 1 or claim 2, wherein the divalent hydrocarbon group is a group represented by the following formula (II), [wherein R2 and R3 each independently represent an alkyl group, and R4 and R5 each independently represent an alkyl group].

6. The resin composition as claimed in claim 1 or claim 2, wherein the curing agent comprises a photoradical polymerization initiator.

7. The resin composition as described in claim 1 or claim 2, further comprising a coupling agent.

8. The resin composition as claimed in claim 1 or claim 2, wherein the concentration of chloride ions in the cured form of the resin composition is less than 5 ppm.

9. The resin composition as claimed in claim 1 or claim 2, wherein the elongation at break of the cured resin composition is 5% to 200%.

10. The resin composition as claimed in claim 1 or claim 2, wherein the storage elastic modulus of the cured resin composition at 40°C is 10 MPa to 5 GPa.

11. The resin composition as claimed in claim 1 or claim 2, wherein the glass transition temperature of the cured resin composition is 120°C to 240°C.

12. The resin composition as claimed in claim 1 or claim 2, wherein the dielectric constant of the cured resin composition at 10 GHz is 3.0 or less.

13. The resin composition as claimed in claim 1 or claim 2, wherein the dielectric loss tangent of the cured resin composition at 10 GHz is less than 0.

005.

14. The resin composition as claimed in claim 1 or claim 2, wherein the 5% weight reduction temperature of the cured resin composition is above 300°C.

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