Power module

Abstract

This invention provides a power module including a semiconductor device, a magnetic component, and a first circuit board. The magnetic component includes a magnetic core and a winding, with the winding passing through the magnetic core. The semiconductor device, the magnetic component, and the first circuit board are stacked along a first direction. A first surface of the semiconductor device is soldered to the first circuit board. At least one of the lower surface of the magnetic component and the lower surface of the first circuit board constitutes a soldering surface. The power module receives input signals from the outside via the soldering surface and transmits output signals to the outside via the soldering surface.

Description

[Technical Field]

[0001] This case relates to an assembly structure of an electronic device, and more particularly to a power supply module structure. [Previous Technology]

[0002] To cope with ever-increasing load power, traditional power supply module structures are typically designed with semiconductor devices at the top, inductors in the middle, and capacitors at the bottom. This structure can effectively improve power density to some extent, but due to limitations in semiconductor devices, it is difficult to further reduce the size of this structure. Therefore, current power supply modules are no longer sufficient for applications requiring higher current densities. On the other hand, reducing the size of power supply modules inevitably leads to heat dissipation problems.

[0003] Therefore, for existing applications that require higher current density and higher heat dissipation capacity, it is necessary to provide a power supply module to address the shortcomings of the existing technology. [Summary of the Invention]

[0004] The purpose of this invention is to provide a power module that, through vertical mounting, places the magnetic component and semiconductor device perpendicular to the soldering surface, thereby reducing the area of ​​the soldering surface and increasing the current density. Furthermore, the semiconductor device is connected to the magnetic component via vias in the circuit board, and the entire power module dissipates heat through the top of the magnetic component, further improving the heat dissipation capacity of the power module.

[0005] To achieve the above objectives, this invention provides a power module, including a semiconductor device, a magnetic component, and a first circuit board. The magnetic component includes a magnetic core and a winding, with the winding passing through the magnetic core. The semiconductor device, the magnetic component, and the first circuit board are stacked along a first direction, with a first surface of the semiconductor device soldered to the first circuit board. At least one of the lower surface of the magnetic component and the lower surface of the first circuit board constitutes a soldering surface, wherein the power module receives input signals from the outside via the soldering surface and transmits output signals to the outside via the soldering surface.

[0006] In one embodiment, the power module further includes a second circuit board, which is soldered to the soldering surface, and the power module transmits signals to the outside via the second circuit board.

[0007] In one embodiment, the top surface of the power module is connected to a heat dissipation device, and the heat generated by the semiconductor device can be transferred to the top surface of the power module through the winding of the magnetic component and dissipated through the heat dissipation device.

[0008] In one embodiment, the top end of the winding is exposed on the upper surface of the magnetic core and extends along a first direction and is connected to a heat dissipation device.

[0009] In one embodiment, the winding has an extension extending from the top of the winding along a second direction and soldered to a semiconductor device or a first circuit board, wherein the first direction and the second direction are perpendicular to each other.

[0010] In one embodiment, the power module is connected to the heat dissipation device via a thermally conductive material.

[0011] In one embodiment, the bottom end of the winding is exposed on the lower surface of the magnetic core to form a welding surface.

[0012] In one embodiment, the semiconductor device is disposed between the magnetic component and the first circuit board.

[0013] In one embodiment, the second side of the semiconductor device is welded to the magnet, and the first side and the second side are two opposite sides of the semiconductor device.

[0014] In one embodiment, a first circuit board is disposed between a magnetic component and a semiconductor device, and the other side of the first circuit board is soldered to the magnetic component.

[0015] In one embodiment, the semiconductor device is connected to the magnetic component through a metal via on the first circuit board.

[0016] In one embodiment, the semiconductor device includes a switching device, and the power supply module is applied to the voltage regulator.

Implementation Method

[0030] Some typical embodiments embodying the features and advantages of this application will be described in detail in the following description. It should be understood that this application can have various variations in different forms, all of which do not depart from the scope of this application, and the descriptions and drawings therein are essentially for illustrative purposes and not for limiting this application. In addition, different embodiments of this application may use repeated reference numerals and / or markings. These repetitions are for simplification and clarity purposes and are not intended to limit the relationship between the various embodiments and / or the described appearance structures. Furthermore, when a component is referred to as "connected to" or "coupled to" another component, it may be directly connected to or coupled to the other component, or there may be intervening components. In addition, it is understood that although terms such as "first" and "second" may be used in the claims to describe different components, these components should not be limited by these terms. The components described in the embodiments are represented by different component symbols, and these terms are used to distinguish different components.

[0031] Some embodiments of this case will be described in detail below with reference to the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other, and the same or similar concepts or processes may not be repeated in some embodiments.

[0032] Figure 1 shows the three-dimensional structure of the power module of the first embodiment of this invention. Figure 2 shows an exploded view of the structure of the power module of the first embodiment of this invention. Figure 3 shows an exploded view of the structure of the power module of the first embodiment of this invention from another perspective. In this embodiment, this invention provides a power module 1, including a semiconductor device 10, a magnetic component 30, a first circuit board 20, and a second circuit board 40. The semiconductor device 10 is, for example, a switching device, and the power module 1 can be applied to a voltage regulator. In this embodiment, the magnetic component 30 includes a magnetic core 31 and a winding 32, with the winding 32 passing through the magnetic core 31. The magnetic component 30, the first circuit board 20, and the semiconductor device 10 are stacked along a first direction, such as the X-axis, and the first surface 11 of the semiconductor device 10 is soldered to the front surface 21 of the first circuit board 20 via pads 111. Other electronic devices 13, such as capacitors, may also be disposed on the front surface 21 of the first circuit board 20. In this embodiment, two semiconductor devices 10 are arranged side by side along the Y-axis. In other embodiments, multiple semiconductor devices 10 and other electronic devices 13 may be arranged side-by-side along the Y-axis on the front side 21 of the first circuit board 20. Furthermore, the semiconductor devices 10 can be connected to the magnetic component 30 via vias 24 (see Figure 5) of the first circuit board 20, where the vias 24 may be metal vias. In the first direction (i.e., the X-axis direction), the first circuit board 20 is disposed between the magnetic component 30 and the semiconductor devices 10. The back side 22 of the first circuit board 20 is soldered to the front side 33 of the magnetic component 30, and the semiconductor devices 10 can be connected to the magnetic component 30 via metal vias on the first circuit board 20. In this embodiment, the lower surface of the magnetic component 30 has a soldering area 35, and the lower surface of the circuit board 20 has a soldering area 23. The soldering area 35 is located between the front side 33 and the back side 34. The soldering area 23 is spatially relative to the pad 411 on the top surface 41 of the second circuit board 40, while the soldering area 35 is spatially relative to the pad 412 on the top surface 41 of the second circuit board 40. The lower surface of the magnetic component 30 is coplanar with the lower surface of the first circuit board 20. The soldering area 35 of the magnetic component 30 and the soldering area 23 of the circuit board 20 together form a soldering surface. The power module 1 can receive input signals from the outside through the soldering surface and transmit output signals to the outside through the soldering surface. Further, the soldering surface and the second circuit board 40 are arranged along a second direction, such as the Z-axis, and the soldering area 35 of the magnetic component 30 is bonded to the pad 412 on the top surface 41 of the second circuit board 40, and the soldering area 23 of the first circuit board 20 is bonded to the pad 411 on the top surface 41 of the second circuit board 40. The first direction (i.e., the X-axis direction) and the second direction (i.e., the Z-axis direction) are perpendicular to each other. The structure of the power module 1 transmits electrical signals to the outside through the conductive terminals 421 on the bottom surface 42 of the second circuit board 40.

[0033] Figure 4 shows a schematic diagram of the magnetic component structure according to the first embodiment of this invention. Referring to Figures 1 to 4. In this embodiment, the winding 32 is partially embedded in the magnetic core 31. In this embodiment, the bottom end 321 of the winding 32 is exposed on the lower surface of the magnetic core 31 to form the welding area 35 of the magnetic component 30, that is, the welding surface of the bottom end 321 of the winding 32. The top end 322 of the winding 32 is exposed on the upper surface of the magnetic core 31 and extends along a first direction (X-axis direction) to provide heat dissipation. In addition, the winding 32 further has an extension 323 that extends from the top end 322 of the winding 32 along a second direction (Y-axis direction) to be welded to the semiconductor device 10 or the first circuit board 20.

[0034] Figure 5 shows a schematic diagram of the heat dissipation path of the power module in the first embodiment of this case. Refer to Figures 1 to 5. In this embodiment, the top surface of the power module 1 is further connected to the heat dissipation device 50 through a thermally conductive material 51, which includes, but is not limited to, a thermal interface material. Since the top end 322 of the winding 32 is exposed on the upper surface of the magnetic core 31, the semiconductor device 10 can form a heat dissipation path P through the through-hole 24 of the first circuit board 20 and the winding 32 of the magnetic component 30. The heat generated by the semiconductor device 10 can be transferred to the top surface of the power module 1 through the winding 32 of the magnetic component 30 and dissipated through the heat dissipation device 50, further improving the heat dissipation capability of the power module 1.

[0035] Figure 6 reveals the three-dimensional structure of the power module according to the second embodiment of this invention. In this embodiment, the power module 1' is similar to the power module 1 shown in Figures 1 to 5, and the same component labels represent the same components, structures, and functions, which will not be described again here. In this embodiment, the power module 1' further omits the second circuit board 40. In the first direction (i.e., the X-axis direction), the first circuit board 20 is further disposed between the magnetic component 30 and the semiconductor device 10. The first surface 11 of the semiconductor device 10 is soldered to the front surface 21 of the first circuit board 20. The back surface 22 of the first circuit board 20 is soldered to the extension 323 of the winding 32 of the magnetic component 30, so that the magnetic component 30, the first circuit board 20, and the semiconductor device 10 are arranged and stacked sequentially along the first direction (i.e., the X-axis direction) to form the power module 1'. In this embodiment, the lower surface of the magnetic component 30 has a soldering area 35, and the lower surface of the first circuit board 20 has a soldering area 23. The lower surface of the magnetic component 30 is flush with the lower surface of the first circuit board 20, forming a common plane S. The soldering area 35 of the magnetic component 30 and the soldering area 23 of the first circuit board 20 then form a soldering surface. The power module 1' can transmit electrical signals outward through the soldering surface formed by the soldering area 35 of the magnetic component 30 and / or the soldering area 23 of the first circuit board 20.

[0036] Figure 7 shows the three-dimensional structure of the power module of the third embodiment of this invention. Figure 8 shows an exploded view of the structure of the power module of the third embodiment of this invention. Figure 9 shows an exploded view of the structure of the power module of the third embodiment of this invention from another perspective. In this embodiment, the power module 1a is similar to the power module structure 1 shown in Figures 1 to 5, and the same component labels represent the same components, structures and functions, which will not be described again here. In this embodiment, the power module 1a includes a magnetic component 30, a semiconductor device 10 and a first circuit board 20. The first surface 11 of the semiconductor device 10 is soldered to the front surface 21 of the first circuit board 20 through pads 111. In the first direction (i.e., the X-axis direction), the semiconductor device 10 is further disposed between the magnetic component 30 and the first circuit board 20. In this embodiment, the lower surface of the magnetic component 30 has a soldering area 35, and the lower surface of the first circuit board 20 has a soldering area 23. The lower surface of the magnetic component 30 is coplanar with the lower surface of the first circuit board 20. The soldering area 35 of the magnetic component 30 and the soldering area 23 of the circuit board 20 together form a soldering surface and are soldered to the top surface 41 of the second circuit board 40. The power module 1 transmits electrical signals to the outside through the conductive terminals 421 on the bottom surface 42 of the second circuit board 40.

[0037] Figure 10 shows an exploded view of the power module structure of the fourth embodiment of this invention. Figure 11 shows a schematic diagram of the heat dissipation path of the power module of the fourth embodiment of this invention. In this embodiment, the power module 1b is similar to the power module 1a shown in Figures 7 to 9, and the same component labels represent the same components, structures, and functions, which will not be described again here. In this embodiment, the semiconductor device 10 of the power module 1b is also arranged and stacked between the magnetic component 30 and the first circuit board 20. The first surface 11 of the semiconductor device 10 is soldered to the front surface 21 of the first circuit board 20 through the solder pad 111. In addition, the second surface 12 of the semiconductor device 10 also has a conductive end 121 soldered to the magnetic component 30, that is, electrically connected to the extension 323 of the winding 32. The first surface 11 and the second surface 12 are two opposite surfaces of the semiconductor device 10. In this way, the magnetic component 30, the semiconductor device 10, and the first circuit board 20 are arranged and stacked sequentially along the first direction (i.e., the X-axis direction). After the magnetic component 30, semiconductor device 10, and first circuit board 20 are assembled, the lower surface of the magnetic component 30 is coplanar with the lower surface of the first circuit board 20. At this time, the welding area 35 on the lower surface of the magnetic component 30 and the welding area 23 on the lower surface of the first circuit board 20 are welded to the top surface 41 of the second circuit board 40. The power module 1b can transmit signals to the outside through the conductive terminals 421 on the bottom surface 42 of the second circuit board 40. The top end 322 of the winding 32 is exposed on the upper surface of the magnetic core 31. When the top surface of the power module 1b is connected to the heat dissipation device 50 through the thermally conductive material 51, the semiconductor device 10 directly forms a heat dissipation path P through the winding 32 of the magnetic component 30. The heat generated by the semiconductor device 10 can be further dissipated to the heat dissipation device 50 through the winding 32 of the magnetic component 30, further improving the heat dissipation capacity of the power module 1b.

[0038] Figure 12 reveals the three-dimensional structure of the power module according to the fifth embodiment of this invention. In this embodiment, the power module 1b' is similar to the power module 1b shown in Figure 10, and the same component labels represent the same components, structures, and functions, which will not be described again here. In this embodiment, the second circuit board 40 is omitted from the power module 1b'. The first surface 11 of the semiconductor device 10 is soldered to the front surface 21 of the first circuit board 20, and the second surface 12 of the semiconductor device 10 is soldered to the front surface 33 of the magnetic component 30. The power module 1b' is formed by arranging and stacking the magnetic component 30, the semiconductor device 10, and the first circuit board 20 along the first direction (i.e., the X-axis direction). In this embodiment, the lower surface of the magnetic component 30 has a soldering area 35, and the lower surface of the first circuit board 20 has a soldering area 23. The lower surface of the magnetic component 30 and the lower surface of the first circuit board 20 are flush to form a common plane S, and the soldering area 35 of the magnetic component 30 and the soldering area 23 of the first circuit board 20 further form a soldering surface. The power module 1b' can transmit signals to the outside through the soldering surface formed by the soldering area 35 of the magnetic component 30 and the soldering area 23 of the first circuit board 20.

[0039] As can be seen from the above, power modules 1, 1', 1a, 1b, and 1b' are horizontally stacked with semiconductor device 10, magnetic component 30, and first circuit board 20, and can transmit electrical signals to the outside through the soldering surface. The size of the soldering surface is related to the thickness of magnetic component 30, first circuit board 20, and semiconductor device 10, and is not affected by the size and number of magnetic component 30, first circuit board 20, and semiconductor device 10. By vertically mounting magnetic component 30, semiconductor device 10, and first circuit board 20, making them perpendicular to the soldering surface, it is easier to reduce the area of ​​the soldering surface, thereby increasing the current density. On the other hand, the entire power module 1, 1', 1a, 1b, and 1b' can dissipate heat through the top of magnetic component 30, thereby improving the heat dissipation capacity of power modules 1, 1', 1a, 1b, and 1b'.

[0040] In any of the above embodiments, the bottom end 321 of the winding 32 of the magnetic component 30 is exposed on the lower surface of the magnetic core 31 to form the welding area 35 of the magnetic component 30.

[0041] In any of the above embodiments, when the first circuit board 20 is sufficiently thick, the magnetic component 30 and the semiconductor device 10 can be fixed on the first circuit board 20, and the soldering surface is formed only by the soldering area 23 on the lower surface of the first circuit board 20. Signal transmission with the outside can be performed through the soldering surface formed by the lower surface of the first circuit board 20. Further, if the corresponding power module includes a second circuit board 40, the external electrical signal is transmitted to the soldering surface via the second circuit board 40.

[0042] In any of the above embodiments, when the magnetic component 30 is sufficiently thick, the welding area 35 on the lower surface of the magnetic component 30 can form the welding surface, that is, only the lower surface of the magnetic component 30 forms the welding surface, and signal transmission with the outside is performed through the welding surface. Further, if the corresponding power module includes a second circuit board, the external electrical signal is transmitted to the welding surface through the second circuit board 40.

[0043] In summary, this invention provides a power module that, through vertical mounting, places the magnetic component and semiconductor device perpendicular to the soldering surface, reducing the area of ​​the soldering surface and thus increasing the current density. Furthermore, the semiconductor device is connected to the magnetic component via vias in the circuit board, and the entire power module dissipates heat through the top of the magnetic component, further improving the heat dissipation capacity of the power module.

[0044] This application may be modified in various ways by those skilled in the art, but all such modifications shall not depart from the scope of protection sought by the claims of this application. [Simplified Explanation of the Diagram]

[0017] The following detailed description of the case and the schematic diagrams of the embodiments are intended to enable those skilled in the art to better understand the above content, and are not intended to limit the case.

[0018] Figure 1 reveals the three-dimensional structure of the power supply module of the first embodiment of this case;

[0019] Figure 2 shows an exploded view of the power module structure of the first embodiment of this case;

[0020] Figure 3 shows an exploded view of the power module of the first embodiment of this case from another perspective;

[0021] Figure 4 shows a schematic diagram of the magnetic component structure of the first embodiment of this case;

[0022] Figure 5 shows a schematic diagram of the heat dissipation path of the power module in the first embodiment of this case;

[0023] Figure 6 reveals the three-dimensional structure of the power supply module of the second embodiment of this case;

[0024] Figure 7 reveals the three-dimensional structure of the power supply module of the third embodiment of this case;

[0025] Figure 8 shows an exploded view of the power module structure of the third embodiment of this case;

[0026] Figure 9 shows an exploded view of the power module of the third embodiment of this case from another perspective;

[0027] Figure 10 shows an exploded view of the power module structure of the fourth embodiment of this case;

[0028] Figure 11 shows a schematic diagram of the heat dissipation path of the power module in the fourth embodiment of this case; and

[0029] Figure 12 reveals the three-dimensional structure of the power supply module of the fifth embodiment of this case.

Claims

1. A power supply module, comprising: A semiconductor device, a magnetic component, and a first circuit board are disclosed. The magnetic component includes a magnetic core and a winding, the winding being disposed through the magnetic core. The semiconductor device, the magnetic component, and the first circuit board are stacked along a first direction. A first surface of the semiconductor device is soldered to the first circuit board, and at least one of the lower surface of the magnetic component and the lower surface of the first circuit board forms a soldering surface. A power module receives input signals from the outside via the soldering surface and transmits output signals to the outside via the soldering surface. The top surface of the power module is connected to a heat dissipation device, and the heat generated by the semiconductor device can be transferred to the top surface of the power module through the winding of the magnetic component and dissipated through the heat dissipation device.

2. The power module as claimed in claim 1, wherein the power module further includes a second circuit board soldered to the soldering surface, and the power module transmits signals to the outside via the second circuit board.

3. The power module as claimed in claim 1, wherein the top end of the winding protrudes from the upper surface of the magnetic core and extends along a first direction and is connected to the heat dissipation device.

4. The power module as claimed in claim 3, wherein the winding has an extension extending from the top end of the winding along a second direction and soldered to the semiconductor device or the first circuit board, wherein the first direction is perpendicular to the second direction.

5. The power module as claimed in claim 1, wherein the power module is connected to the heat dissipation device via a thermally conductive material.

6. The power module as claimed in claim 1, wherein the bottom end of the winding protrudes from the lower surface of the magnetic core to form the welding surface.

7. The power module as claimed in claim 1, wherein the semiconductor device is disposed between the magnet and the first circuit board.

8. The power module as claimed in claim 7, wherein a second side of the semiconductor device is soldered to the magnet, and the first side and the second side are opposite sides of the semiconductor device.

9. The power module as claimed in claim 1, wherein the first circuit board is disposed between the magnet and the semiconductor device, and the other side of the first circuit board is soldered to the magnet.

10. The power module as claimed in claim 9, wherein the semiconductor device is connected to the magnet via a metal via on the first circuit board.

11. The power module as claimed in claim 1, wherein the semiconductor device includes a switching device, and the power module is applied to a voltage regulator.

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