Resonant cavity light emitting diode

Abstract

A resonant cavity light-emitting diode includes a substrate, a first reflective structure, a resonant cavity layer, and a second reflective structure. The first reflective structure is formed above the substrate. The resonant cavity layer is formed above the first reflective structure and includes a light-emitting layer, a first spacer layer, and a second spacer layer. The light-emitting layer is located between the first spacer layer and the second spacer layer. The first spacer layer is located between the light-emitting layer and the first reflective structure. The thickness of the first spacer layer is greater than the thickness of the second spacer layer. The resonant cavity layer is configured to emit light having a wavelength λ. The second reflective structure is formed on the second spacer layer. The second spacer layer is located between the light-emitting layer and the second reflective structure. The reflectivity of the first reflective structure for light of wavelength λ is greater than the reflectivity of the second reflective structure for light of wavelength λ.

Claims

1. A resonant cavity light-emitting diode, comprising: One base; A first reflective structure is formed above the substrate; A resonant cavity layer is formed above the first reflective structure, wherein the resonant cavity layer includes: a light-emitting layer; The resonant cavity layer comprises a first spacer layer and a second spacer layer, wherein the light-emitting layer is located between the first spacer layer and the second spacer layer, the first spacer layer is located between the light-emitting layer and the first reflective structure, and the thickness of the first spacer layer is greater than the thickness of the second spacer layer, wherein the resonant cavity layer is configured to emit light having a wavelength λ; and a second reflective structure is formed on the second spacer layer, and the second spacer layer is located between the light-emitting layer and the second reflective structure, wherein the reflectivity of the first reflective structure for light of wavelength λ is greater than the reflectivity of the second reflective structure for light of wavelength λ, wherein the reflectivity of the first reflective structure for light of wavelength λ is greater than 80%, and the reflectivity of the second reflective structure for light of wavelength λ is 20% to 80%.

2. The resonant cavity light-emitting diode as claimed in claim 1, wherein the difference between the thickness of the first spacer layer and the thickness of the second spacer layer is between 0.025 times the wavelength λ and 0.05 times the wavelength λ.

3. The resonant cavity light-emitting diode as claimed in claim 1, wherein an antinode reference plane is located in the middle of the resonant cavity layer, wherein the distance between the center of the light-emitting layer and the antinode reference plane is between 0.05 times the wavelength λ and 0.1 times the wavelength λ.

4. The resonant cavity light-emitting diode as claimed in claim 1, wherein the ratio of the thickness of the first spacer layer to the thickness of the second spacer layer is greater than or equal to 0.7 and less than 1.

5. The resonant cavity light-emitting diode as claimed in claim 1, wherein the first reflective structure is a first distributed Bragg reflector and the second reflective structure is a second distributed Bragg reflector.

6. The resonant cavity light-emitting diode as claimed in claim 1, wherein the first reflective structure is a metal reflective layer and the second reflective structure is a distributed Bragg reflector.

7. The resonant cavity light-emitting diode as claimed in claim 1, wherein the first reflective structure is a distributed Bragg reflector, wherein the distributed Bragg reflector comprises a plurality of alternating stacked first material layers and a plurality of second material layers, wherein the first material layers and the second material layers comprise the same elements, but the first material layers and the second material layers have different element ratios.

8. The resonant cavity light-emitting diode as claimed in claim 1, wherein the thickness of the resonant cavity layer is an integer multiple of the wavelength λ, wherein the wavelength λ is between 610 nanometers and 630 nanometers.

9. The resonant cavity light-emitting diode as described in claim 1, further comprising: A capping layer is formed on the second reflective structure, wherein the substrate material includes n-type gallium arsenide, the first reflective structure includes n-type aluminum gallium arsenide, the second reflective structure includes p-type aluminum gallium indium phosphide, and the capping layer includes p-type gallium phosphide.

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