Semiconductor structure and method of forming the same

Abstract

A semiconductor structure and a method for forming the same. The semiconductor structure includes a substrate and a first dummy structure. The substrate includes a first region and a second region different from the first region, wherein the first region includes a first well region. The first dummy structure includes a first doped region disposed in the first well region and a first dummy contact, a first dummy layer, and a first dummy wiring structure sequentially disposed on the first doped region, wherein the first dummy contact electrically connects the first doped region to the first dummy layer, and the first dummy layer is electrically connected to the first dummy wiring structure. When an ion gas flows over the first dummy structure, the charge in the first doped region can be transferred through the first dummy contact, the first dummy layer, and the first dummy wiring structure to the topmost first conductive layer in the first dummy wiring structure to neutralize the opposite charge in the ion gas.

Claims

1. A semiconductor structure, comprising: The substrate includes a first region and a second region different from the first region, the first region including a first well region having a first conductivity type; The first dummy structure includes a first doped region disposed in the first well region and having the first conductivity type, and a first dummy contact, a first dummy layer, and a first dummy wiring structure sequentially disposed on the first doped region. The first dummy contact electrically connects the first doped region to the first dummy layer, and the first dummy layer is electrically connected to the first dummy wiring structure. When ion gas flows above the first dummy structure, the charge with the same electrical charge as the first conductivity type accumulated in the first well region will be sequentially transferred through the first doped region, the first dummy contact, the first dummy layer, and the first dummy wiring structure to the top wiring layer of the first dummy wiring structure to neutralize the charge with the opposite electrical charge in the ion gas.

2. The semiconductor structure as claimed in claim 1, wherein the material of the first dummy layer is different from the material of the first dummy wiring structure.

3. The semiconductor structure as described in claim 1, further comprising: The second dummy structure includes a second doped region disposed in the second region of the substrate and a second dummy contact, a second dummy layer and a second dummy wiring structure sequentially disposed on the second doped region, wherein the second dummy contact electrically connects the second doped region to the second dummy layer and the second dummy layer is electrically connected to the second dummy wiring structure.

4. The semiconductor structure as described in claim 3, wherein, when an ion gas flows over the second dummy structure, the charge in the second doped region can be transferred through the second dummy contact, the second dummy layer, and the second dummy wiring structure to the topmost wiring layer of the second dummy wiring structure to neutralize the opposite charge in the ion gas.

5. The semiconductor structure as claimed in claim 3, wherein the second region of the substrate has the same conductivity as the second doped region.

6. A method for forming a semiconductor structure, comprising: A substrate is provided, wherein the substrate includes a first region and a second region different from the first region, and the first region includes a first well region having a first conductivity type; a first dummy structure is provided, wherein the first dummy structure includes a first doped region formed in the first well region and having the first conductivity type, and a first dummy contact, a first dummy layer and a first dummy wiring structure sequentially formed on the first doped region, wherein the first dummy contact electrically connects the first doped region to the first dummy layer, and the first dummy layer is electrically connected to the first dummy wiring structure; and an ion gas is purged over the first dummy structure such that charges with the same conductivity type accumulated in the first well region are sequentially transferred through the first doped region, the first dummy contact, the first dummy layer and the first dummy wiring structure to the top wiring layer of the first dummy wiring structure to neutralize charges with opposite conductivity in the ion gas.

7. The method of claim 6, wherein the first doped region is formed in the process of forming the source / drain.

8. The method as described in claim 6, further comprising: A second dummy structure is provided, wherein the second dummy structure includes a second doped region formed in the second region of the substrate and a second dummy contact, a second dummy layer and a second dummy wiring structure sequentially formed on the second doped region, wherein the second dummy contact electrically connects the second doped region to the second dummy layer and the second dummy layer is electrically connected to the second dummy wiring structure, wherein when the ion gas is purged over the second dummy structure, the charge in the second doped region is transferred through the second dummy contact, the second dummy layer and the second dummy wiring structure to the topmost wiring layer of the second dummy wiring structure to neutralize the charge with opposite charge in the ion gas.

9. The method of claim 8, wherein the second region of the substrate has the same conductivity as the second doped region.

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