A system and method for inspecting side edge of semiconductor device

Abstract

The present invention provides a system (101) for detecting the bottom edge (103AA) of a semiconductor element, the system (101) being configured to capture at least one image (401) composed of a plurality of sub-images; wherein the sub-images are about the bottom edge (103AA) of a plurality of semiconductor elements, and thereby the system (101) includes a plurality of light sources configured to emit infrared light toward the bottom edge (103AA) of a plurality of semiconductor elements rotating on at least one turntable. The present invention also provides a method for performing the inspection using the system (101).

Description

[Technical Field]

[0001] The present invention provides a system for detecting the bottom edge of a semiconductor element, the system being configured to capture at least one image composed of a plurality of sub-images; wherein the sub-images are about the bottom edge of a plurality of semiconductor elements, thereby the system comprising a plurality of light sources configured to emit infrared light toward the bottom edge of a plurality of semiconductor elements rotating on at least one turntable. The present invention also provides a method for performing the inspection using the system. [Previous Technology]

[0002] Before sorting the bare dies to be packaged, during the wafer slicing process into multiple bare dies, defects may appear on the bottom edge of the bare die because the slicing or dicing process is done by cutting the wafer from top using a laser. These defects are typically inspected and identified in a process called laser groove defect detection. However, existing systems for inspecting the bottom edge of the bare die are inefficient because some defects may be missed.

[0003] In addition, bare dies or semiconductor devices are typically transported from the turret to the inspection station via a linear shuttle system, which is slow, inefficient and has low unit per hour (UPH) output.

[0004] Furthermore, existing systems include image capturing devices that can only capture one bottom edge of the semiconductor element per image, highlighting their inefficiency when capturing all four sides of a large number of semiconductor elements.

[0005] US11164765B2 by YINGLING MICHAEL MURRAY et al. discloses a die processing system and method for preparing or processing dies made of various types of pre-expanded wafer materials. While prior art includes cameras with three-dimensional views of each extracted die, the die is rotated by a pick-up head, rather than using a turntable as in this invention. Furthermore, prior art does not show simultaneous inspection of the two bottom edges of different dies in a single image, as proposed in this invention.

[0006] Therefore, these disadvantages can be mitigated by a system and method for detecting the bottom edge of a semiconductor element, the system and method being configured to capture at least one image consisting of a plurality of sub-images; wherein the sub-images are about the bottom edge of a plurality of semiconductor elements. [Summary of the Invention]

[0007] Therefore, the main objective of the present invention is to provide a system and method for detecting the bottom edge of a semiconductor element, which is capable of performing simultaneous inspection of the bottom edges of multiple semiconductor elements, thereby improving the UPH of visual inspection.

[0008] Another object of the present invention is to provide a system and method for detecting the bottom edge of a semiconductor element, the system and method being able to detect more defects on the bottom edge, thereby improving the visual quality of the inspection.

[0009] Another object of the present invention is to provide a system and method for detecting the bottom edge of a semiconductor element, the system and method being able to filter out noise, thereby preventing good products from being mistaken for defective products and being over-rejected during visual inspection.

[0010] The additional objects of the invention will become apparent from understanding the following detailed description of the invention or from using the invention in practice.

[0011] According to a preferred embodiment of the present invention, the following is provided:

[0012] A system for detecting the bottom edge of a semiconductor element, the system comprising: at least one first light source, at least one second light source, at least one third light source, or a combination thereof; at least one first light manipulation device; wherein the first light source is configured to emit at least one first infrared light through the top surface of the first semiconductor element to the bottom edge of the first semiconductor element; wherein the first infrared light forms an acute angle with the bottom surface of the first semiconductor element when it reaches the bottom edge of the first semiconductor element; the system further comprising at least one first image capturing device configured to capture at least one image of the bottom edge of the first semiconductor element;

[0013] The second light source is configured to emit at least one second infrared light through a first side surface of the first semiconductor element to the bottom edge of the first semiconductor element; wherein the second infrared light forms an obtuse angle with the bottom surface of the first semiconductor element when it reaches the bottom edge of the first semiconductor element;

[0014] The first light manipulation device is disposed along the optical path between the first light source and the bottom edge of the first semiconductor element, and is configured to allow the first infrared light from the first light source to pass toward the bottom edge of the first semiconductor element; and is configured to reflect the first infrared light and the second infrared light reflected from the bottom edge to the first image capturing device;

[0015] The third light source is configured to emit at least one third infrared light to the bottom edge of the first semiconductor element; wherein the third infrared light forms an acute angle with the bottom surface of the first semiconductor element when it reaches the bottom edge of the first semiconductor element;

[0016] Wherein, the first light manipulation device is configured to reflect the third infrared light from the third light source through the top surface of the first semiconductor element toward the bottom edge of the first semiconductor element; and is configured to reflect the third infrared light reflected from the bottom edge to the first image capturing device;

[0017] The system further includes the following items:

[0018] A turret, the turret including at least one turret station located on a circumference; wherein the turret is configured to rotate to convey the semiconductor element along the circumference of the turret;

[0019] At least one turntable, the at least one turntable comprising a first turntable station, a second turntable station, a third turntable station, and a fourth turntable station arranged equidistantly at the circumference of the turntable; wherein the first turntable station, the second turntable station, the third turntable station, and the fourth turntable station are configured to receive a semiconductor element from the turret at the turret station; wherein the turntable is configured to rotate to transfer the semiconductor element from the first turntable station to the second turntable station, the third turntable station, the fourth turntable station, and back to the first turntable station;

[0020] At least one fourth light source, at least one fifth light source, or a combination thereof;

[0021] The fourth light source is configured to emit at least one fourth infrared light to the bottom edge of the third semiconductor element; wherein the fourth infrared light forms an acute angle with the bottom surface of the third semiconductor element when it reaches the bottom edge of the third semiconductor element;

[0022] The fifth light source is configured to emit at least one fifth infrared light to the bottom edge of the third semiconductor element; wherein the fifth infrared light forms an obtuse angle with the bottom surface of the third semiconductor element when it reaches the bottom edge of the third semiconductor element;

[0023] The system further includes at least one second optical manipulation device, the at least one second optical manipulation device being disposed along the optical path between the fourth light source and the bottom edge of the third semiconductor element, configured to allow the fourth infrared light from the fourth light source to pass toward the bottom edge of the third semiconductor element; and configured to reflect the fourth infrared light and the fifth infrared light reflected from the bottom edge to the first image capturing device;

[0024] Wherein, the third light source is configured to emit at least one third infrared light to the bottom edge of the third semiconductor element; wherein, the third infrared light forms an acute angle with the bottom surface of the third semiconductor element when it reaches the bottom edge of the third semiconductor element;

[0025] Wherein, the second light manipulation device is configured to reflect the third infrared light from the third light source toward the bottom edge of the third semiconductor element; and is configured to reflect the third infrared light reflected from the bottom edge to the first image capturing device;

[0026] Wherein, the first image capturing device is configured to capture an image composed of a first sub-image and a second sub-image; wherein, when the first infrared light from the first light source, the second infrared light from the second light source, and the third infrared light from the third light source are emitted toward the bottom edge of the first semiconductor element, and when the first semiconductor element is located at the second station of the turntable, the first sub-image is about the bottom edge of the first semiconductor element; wherein, when the fourth infrared light from the fourth light source, the fifth infrared light from the fifth light source, and the third infrared light from the third light source are emitted toward the bottom edge of the third semiconductor element, and when the third semiconductor element is located at the fourth station of the turntable, the second sub-image is about the bottom edge of the third semiconductor element.

[0027] In another embodiment of the present invention, the following is provided:

[0028] A method for detecting the bottom edge of a semiconductor device, the method comprising the following steps:

[0029] (i) At least one first infrared light from at least one first light source is emitted through the top surface of the first semiconductor element to the bottom edge of the first semiconductor element; wherein the first infrared light forms an acute angle with the bottom surface of the first semiconductor element when it reaches the bottom edge of the first semiconductor element; simultaneously, at least one second infrared light from at least one second light source is emitted through the first side surface of the first semiconductor element to the bottom edge of the first semiconductor element; wherein the second infrared light forms an obtuse angle with the bottom surface of the first semiconductor element when it reaches the bottom edge of the first semiconductor element; simultaneously, at least one third infrared light from at least one third light source is emitted through the top surface of the first semiconductor element to the bottom edge of the first semiconductor element before being reflected from the first light manipulation device; wherein the third infrared light forms an acute angle with the bottom surface of the first semiconductor element when it reaches the bottom edge of the first semiconductor element;

[0030] (ii) The first infrared light, the second infrared light and the third infrared light reflected from the bottom edge of the first semiconductor element are reflected to the first image capturing device;

[0031] (iii) Capture at least one image of the bottom edge of the first semiconductor element using the first image capturing device.

Implementation Method

[0033] In the following detailed description, numerous specific details are set forth to provide a thorough understanding of the invention. However, those skilled in the art will understand that the invention can be practiced without these specific details. In other instances, well-known methods, procedures, and / or elements have not been described in detail so as not to obscure the invention.

[0034] The invention will be more clearly understood through the following description of embodiments, which are given by way of example only with reference to the drawings which are not drawn to scale.

[0035] As shown in FIG. 1, the present invention presents a system 101 for detecting the bottom edge 103AA of a semiconductor element. The system includes at least one first light source 107, at least one second light source 108, at least one third light source 109, or a combination thereof. The system 101 also includes at least one first image capturing device 111A and at least one first light manipulation device 113A. The semiconductor element may be a bare die.

[0036] The first light source 107 is configured to emit at least one first infrared light 115A through the top surface 117 of the first semiconductor element 105A to the bottom edge 103AA of the first semiconductor element 105A; wherein the first infrared light 115A forms an acute angle 119A with the bottom surface 118 of the first semiconductor element 105A when it reaches the bottom edge 103AA of the first semiconductor element 105A.

[0037] The first image capturing device 111A is configured to capture at least one image 401 of the bottom edge 103AA of the first semiconductor element 105A.

[0038] The second light source 108 is configured to emit at least one second infrared light 115B to the bottom edge 103AA of the first semiconductor element 105A; wherein the second infrared light 115B forms an obtuse angle 119B with the bottom surface 118 of the first semiconductor element 105A when it reaches the bottom edge 103AA of the first semiconductor element 105A.

[0039] The first light manipulation device 113A is disposed along the optical path between the first light source 107 and the bottom edge 103AA of the first semiconductor element 105A, and is configured to allow the first infrared light 115A from the first light source 107 to pass through the bottom edge 103AA of the first semiconductor element 105A; and is configured to reflect the first infrared light 115A and the second infrared light 115B reflected from the bottom edge 103AA to the first image capturing device 111A.

[0040] The third light source 109 is configured to emit at least one third infrared light 115C to the bottom edge 103AA of the first semiconductor element 105A; wherein the third infrared light 115C forms an acute angle 119A with the bottom surface 118 of the first semiconductor element 105A when it reaches the bottom edge 103AA of the first semiconductor element 105A.

[0041] The first light manipulation device 113A is configured to reflect the third infrared light 115C from the third light source 109 through the top surface 117 of the first semiconductor element 105A toward the bottom edge 103AA of the first semiconductor element 105A; and is configured to reflect the third infrared light 115C reflected from the bottom edge 103AA to the first image capturing device 111A.

[0042] As shown in FIG2, system 101 further includes at least one fourth light source 213, at least one fifth light source 215, or a combination thereof. System 101 also includes a turret 203, at least one turntable, and at least one second light manipulation device 113B.

[0043] The turret 203 includes at least one turret station located on the circumference; wherein the turret 203 is configured to rotate to convey the semiconductor element along the circumference of the turret.

[0044] The at least one turntable includes a plurality of turntable stations arranged at equal intervals around the circumference of the turntable; wherein each turntable station is configured to receive a semiconductor element from the turret 203 at the turret station; wherein the turntable is configured to rotate to transfer the semiconductor element from one turntable station to another. A first semiconductor element 105A is disposed in one of the turntable stations.

[0045] The fourth light source 213 is configured to emit at least one fourth infrared light 115D to the bottom edge 103AA of a third semiconductor element 105C disposed in another turntable station in the turntable station; wherein the fourth infrared light 115D forms an acute angle 119A with the bottom surface 118 of the third semiconductor element 105C when it reaches the bottom edge 103AA of the third semiconductor element 105C.

[0046] The fifth light source 215 is configured to emit at least one fifth infrared light 115E to the bottom edge 103AA of the third semiconductor element 105C; wherein the fifth infrared light 115E forms an obtuse angle 119B with the bottom surface 118 of the third semiconductor element 105C when it reaches the bottom edge 103AA of the third semiconductor element 105C.

[0047] The second light manipulation device 113B is disposed along the optical path between the fourth light source 213 and the bottom edge 103AA of the third semiconductor element 105C, and is configured to allow the fourth infrared light 115D from the fourth light source 213 to pass through toward the bottom edge 103AA of the third semiconductor element 105C; and is configured to reflect the fourth infrared light 115D and the fifth infrared light 115E reflected from the bottom edge 103AA to the first image capturing device 111A.

[0048] The third light source 109 is configured to emit at least one third infrared light 115C to the bottom edge 103AA of the third semiconductor element 105C; wherein the third infrared light 115C forms an acute angle 119A with the bottom surface 118 of the third semiconductor element 105C when it reaches the bottom edge 103AA of the third semiconductor element 105C.

[0049] The second light manipulation device 113B is configured to reflect the third infrared light 115C from the third light source 109 toward the bottom edge 103AA of the third semiconductor element 105C; and is configured to reflect the third infrared light 115C reflected from the bottom edge 103AA to the first image capturing device 111A.

[0050] The first image capturing device 111A is configured to capture an image 401 composed of a first sub-image 403 and a second sub-image 405 as shown in FIG. 4; wherein, when the first infrared light 115A from the first light source 107, the second infrared light 115B from the second light source 108, and the third infrared light 115C from the third light source 109 are emitted toward the bottom edge 103AA of the first semiconductor element 105A, and when the first semiconductor element 105A is located at the second station 207B of the turntable, the first sub-image 403 is Regarding the bottom edge 103AA of the first semiconductor element 105A; wherein, when the fourth infrared light 115D from the fourth light source 213, the fifth infrared light 115E from the fifth light source 215, and the third infrared light 115C from the third light source 109 are emitted toward the bottom edge 103AA of the third semiconductor element 105C, and when the third semiconductor element 105C is located at the fourth station 207D of the turntable, the second sub-image 405 is with respect to the bottom edge 103AA of the third semiconductor element 105C.

[0051] In one configuration, as shown in FIG2, the at least one turntable may be a first turntable 205A, the first turntable including a first turntable first station 207A, a first turntable second station 207B, a first turntable third station 207C and a first turntable fourth station 207D; wherein, the first turntable is configured to rotate to transfer the semiconductor element from the first turntable first station 207A to the first turntable second station 207B, the first turntable third station 207C, the first turntable fourth station 207D and back to the first turntable first station 207A. In this configuration, when the first semiconductor element 105A is located at the first station 207A of the first turntable, the first light source 107, the second light source 108, the third light source 109, or a combination thereof, emit first infrared light 115A, second infrared light 115B, third infrared light 115C, or a combination thereof to the bottom edge 103AA of the first semiconductor element 105A, respectively; and when the third semiconductor element 105C is located at the third station 207C of the first turntable, the fourth light source 213, the fifth light source 215, the third light source 109, or a combination thereof, emit fourth infrared light 115D, fifth infrared light 115E, third infrared light 115C, or a combination thereof to the bottom edge 103AA of the third semiconductor element 105C, respectively.

[0052] In another configuration, as shown in FIG3, the at least one turntable may include a second turntable 205B in addition to the first turntable 205A, wherein the second turntable 205B comprises a second turntable first station 211A, a second turntable second station 211B, a second turntable third station 211C, and a second turntable fourth station 211D; wherein the second turntable is configured to rotate to transfer the semiconductor element from the second turntable first station 211A to the second turntable second station 211B, the second turntable third station 211C, the second turntable fourth station 211D, and back to the second turntable first station 211A. In this configuration, a similar light source device emits infrared light to the bottom edge of the semiconductor disposed at a second turntable station similar to the first turntable station, and then the infrared light is ultimately reflected to a second image capture device 111B disposed relative to its corresponding turntable in an arrangement similar to that of the first image capture device 111A.

[0053] Referring to Figure 2 as an example configuration, it can be seen that the first image capturing device 111A is configured to simultaneously capture images of the first side 116A of the first semiconductor element 105A and the third side 116C of the third semiconductor element 105C, which is actually an image composed of the first sub-image 403 and the second sub-image 405. This is because as the turntable rotates, the side pointing towards the first image capturing device 111A through the first light manipulation device 113A and the second light manipulation device 113B changes. When the first semiconductor element 105A is finally rotated from the first turntable to the third station 207D of the first turntable, the first image capturing device 111A will capture the third side 116C of the first semiconductor element 105A. The first turntable 205A will rotate further, which will transfer the first semiconductor element 105A back to the first station 209A of the turret. The turret 203 rotates further and conveys the first semiconductor element 105A to the second station 209B of the turret, whereby the first semiconductor element 105A is then conveyed to the first station 211A of the second turntable, as shown in FIG3. At the second turntable, due to the rotation of the second turntable, the second side 116B of the first semiconductor element 105A will be captured by the second image capture device 111B before the fourth side 116D of the first semiconductor element 105A is captured by the second image capture device 111B. After processing the transfer of the first semiconductor element 105A between the turret 203, the first turntable 205A and the second turntable 205B, images of all four sides of the first semiconductor element 105A can be captured. Compared with the linear conventional transfer of semiconductor elements, this process is repeated for all other semiconductor elements with a much higher throughput, higher output efficiency and shorter indexing time.

[0054] The first light manipulation device 113A and the second light manipulation device 113B can be any suitable prism configuration, as long as the prism configuration is able to reflect the first infrared light from the bottom edge of the semiconductor element to the image capturing device when the semiconductor element is placed in its predetermined turntable station.

[0055] The present invention also presents a method for detecting the bottom edge 103AA of a semiconductor element, the method comprising the following steps. In step (i), at least one first infrared light 115A from at least one first light source 107 is emitted to the bottom edge 103AA of the first semiconductor element 105A; wherein the first infrared light 115A forms an acute angle 119A with the bottom surface 118 of the first semiconductor element 105A when it reaches the bottom edge 103AA of the first semiconductor element 105A; simultaneously, at least one second infrared light 115B from a second light source 108 is emitted to the bottom edge 103AA of the first semiconductor element 105A; wherein the second infrared light 115B... When the light reaches the bottom edge 103AA of the first semiconductor element 105A, it forms an obtuse angle 119B with the bottom surface 118 of the first semiconductor element 105A; at the same time, at least one third infrared light 115C from at least one third light source 109 is emitted through the first light manipulation device 113A to the bottom edge 103AA of the first semiconductor element 105A; wherein the third infrared light 115C forms an acute angle 119A with the bottom surface 118 of the first semiconductor element 105A when it reaches the bottom edge 103AA of the first semiconductor element 105A.

[0056] In step (ii), the first infrared light 115A, the second infrared light 115B and the third infrared light 115C reflected from the bottom edge 103AA of the first semiconductor element 105A are reflected to the first image capturing device 111A.

[0057] In step (iii), at least one image 401 of the bottom edge 103AA of the first semiconductor element 105A is captured by the first image capturing device 111A.

[0058] Optionally, as shown in FIG3, the following steps occur before step (i). In step (a), the turret 203 is rotated to convey the first semiconductor element 105A along the circumference of the turret to the first station 209A of the turret. In step (b), the first semiconductor element 105A is received from the first station 209A of the turret 203 at the first station 207A of the turntable. If the first station 207A of the turntable is loaded with a semiconductor element before performing step (b), the semiconductor element is first conveyed to the first station 209A of the turret 203, and then the first semiconductor element 105A is conveyed to the first station 207A of the turntable. In step (c), the turret 203 is rotated to convey the second semiconductor element 105B along the circumference of the turret to the first station 209A of the turret, while the turntable is rotated until the first semiconductor element 105A is located at the second station 207B of the turntable. In step (d), the second semiconductor element 105B is received from the first station 209A of the turret 203 at the first station 207A of the turntable. If the first station 207A of the turntable is loaded with a semiconductor element before performing step (d), the semiconductor element is first conveyed to the first station 209A of the turret 203, and then the second semiconductor element 105B is conveyed to the first station 207A of the turntable. In step (e), the turret 203 is rotated to convey the third semiconductor element 105C along the circumference of the turret to the first station 209A of the turret, while the turntable is rotated until the second semiconductor element 105B is located at the second station 207B of the turntable and the first semiconductor element 105A is located at the third station 207C of the turntable. In step (f), the third semiconductor element 105C is received from the first station 209A of the turret 203 at the first station 207A of the turntable. If the first station 207A of the turntable is loaded with a semiconductor element before performing step (f), the semiconductor element is first conveyed to the first station 209A of the turret 203, and then the third semiconductor element 105C is conveyed to the first station 207A of the turntable. In step (g), the turret 203 is rotated to convey the fourth semiconductor element 105D along the circumference of the turret to the first station 209A of the turret, while the turntable is rotated until the third semiconductor element 105C is located at the second station 207B of the turntable, and the second semiconductor element 105B is located at the third station 207C of the turntable, and the first semiconductor element 105A is located at the fourth station 207D of the turntable.In step (h), the fourth semiconductor element 105D is received from the first turret station 209A of the turret 203 at the first turret station 207A of the turntable. If the first turret station 207A is loaded with a semiconductor element before performing step (d), the semiconductor element is first transferred to the first turret station 209A of the turret 203, and then the fourth semiconductor element 105D is transferred to the first turret station 207A.

[0059] Optionally, step (i) further includes the following operations: emitting at least one fourth infrared light 115D from at least one fourth light source 213 to the bottom edge 103AA of the third semiconductor element 105C; wherein the fourth infrared light 115D forms an acute angle 119A with the bottom surface 118 of the third semiconductor element 105C when it reaches the bottom edge 103AA of the third semiconductor element 105C; and simultaneously emitting a fifth infrared light 115E from at least one fifth light source 215 to the bottom edge 103AA of the third semiconductor element 105C. The fifth infrared light 115E forms an obtuse angle 119B with the bottom surface 118 of the third semiconductor element 105C when it reaches the bottom edge 103AA of the third semiconductor element 105C; at the same time, the third infrared light 115C from the third light source 109 is emitted to the bottom edge of the third semiconductor element 105C through the second light manipulation device 113B; wherein the third infrared light 115C forms an acute angle 119A with the bottom surface 118 of the third semiconductor element 105C when it reaches the bottom edge of the third semiconductor element 105C.

[0060] Optionally, step (ii) further includes the following operation: reflecting the fourth infrared light 115D, the fifth infrared light 115E and the third infrared light 115C reflected from the bottom edge of the third semiconductor element 105C to the first image capturing device 111A.

[0061] Optionally, step (iii) further includes capturing the image 401 of the bottom edge of the third semiconductor element 105C by the first image capturing device 111A.

[0062] Although the invention has been shown and described herein in a manner considered to be its preferred embodiment, illustrating the results obtained by the invention and its advantages over the prior art, the invention is not limited to those specific embodiments. Therefore, the forms of the invention shown and described herein are to be considered illustrative only, and other embodiments may be chosen without departing from the scope of the invention, as set forth in the appended claims. [Simplified Explanation of the Diagram]

[0032] Other aspects and advantages of the present invention will be understood after reading the detailed description in conjunction with the accompanying drawings, in which: FIG1 is a side view of the system of the present invention when inspecting semiconductor elements. FIG2 is a perspective view of the system of the present invention when inspecting multiple semiconductor elements on a turntable. FIG3 is a top view of the system of the present invention when inspecting multiple semiconductor elements on multiple turntables. FIG4 shows an image captured by the first image capturing device. FIG5 shows a perspective view of a semiconductor element.

Claims

1. A system (101) for detecting the bottom edge of a semiconductor element, comprising: The system (101) comprises at least one first light source (107), at least one second light source (108), at least one third light source (109), or a combination thereof; at least one first light manipulation device (113A); wherein the first light source (107) is configured to emit at least one first infrared light (115A) through the top surface (117) of a first semiconductor element (105A) to the bottom edge (103AA) of the first semiconductor element (105A); wherein the first infrared light (115A) forms an acute angle (119A) with the bottom surface (118) of the first semiconductor element (105A) when it reaches the bottom edge (103AA) of the first semiconductor element (105A); the system (101) further comprises at least one first image capturing device (111A), the at least one first image capturing device (111A) being configured to capture at least one image (401) of the bottom edge (103AA) of the first semiconductor element (105A); characterized in that: The second light source (108) is configured to emit at least one second infrared light (115B) through a first side surface (116A) of the first semiconductor element (105A) to the bottom edge (103AA) of the first semiconductor element (105A); wherein the second infrared light (115B) forms an obtuse angle (119B) with the bottom surface (118) of the first semiconductor element (105A) when it reaches the bottom edge (103AA) of the first semiconductor element (105A). The first light manipulation device (113A) is arranged along the optical path between the first light source (107) and the bottom edge (103AA) of the first semiconductor element (105A), and is configured to allow the first infrared light (115A) from the first light source (107) to pass toward the bottom edge (103AA) of the first semiconductor element (105A); and is configured to reflect the first infrared light (115A) and the second infrared light (115B) reflected from the bottom edge (103AA) to the first image capturing device (111A); the third light source (109) is configured to emit at least one third infrared light (115C) to the bottom edge (103AA) of the first semiconductor element (105A); wherein the third infrared light (115C) forms an acute angle (119A) with the bottom surface (118) of the first semiconductor element (105A) when it reaches the bottom edge (103AA) of the first semiconductor element (105A). The first optical manipulation device (113A) is configured to reflect the third infrared light (115C) from the third light source (109) through the top surface (117) of the first semiconductor element (105A) toward the bottom edge (103AA) of the first semiconductor element (105A).And it is configured to reflect the third infrared light (115C) reflected from the bottom edge (103AA) back to the first image capturing device (111A).

2. The system (101) for detecting the bottom edge of a semiconductor element as described in claim 1, wherein, The system (101) further includes: a turret (203) comprising at least one turret station located on a circumference; wherein the turret (203) is configured to rotate to convey the semiconductor element along the circumference of the turret (203); at least one turntable comprising a plurality of turntable stations equidistantly arranged on the circumference of the turntable; wherein each turntable station is configured to receive a semiconductor element from the turret (203) at the turret station; wherein the turntable is configured to rotate to convey the semiconductor element from one turntable station to another; wherein the first semiconductor element (105A) is disposed in one of the turntable stations; the system (101) further includes at least one fourth light source (213), at least one fifth light source (215), or a combination thereof; The fourth light source (213) is configured to emit at least one fourth infrared light (115D) to the bottom edge (103AA) of a third semiconductor element (105C) disposed in another turntable station in the turntable station; wherein the fourth infrared light (115D) forms an acute angle (119A) with the bottom surface (118) of the third semiconductor element (105C) when it reaches the bottom edge (103AA) of the third semiconductor element (105C); the fifth light source (215) is configured to emit at least one fifth infrared light (115E) to the bottom edge (103AA) of the third semiconductor element (105C); wherein the fifth infrared light (115E) forms an obtuse angle (119B) with the bottom surface (118) of the third semiconductor element (105C) when it reaches the bottom edge (103AA) of the third semiconductor element (105C). The system (101) further includes at least one second optical manipulation device (113B) disposed along an optical path between the fourth light source (213) and the bottom edge (103AA) of the third semiconductor element (105C), and configured to allow the fourth infrared light (115D) from the fourth light source (213) to pass toward the bottom edge (103AA) of the third semiconductor element (105C); and configured to reflect the fourth infrared light (115D) and the fifth infrared light (115E) reflected from the bottom edge (103AA) to the first image capturing device (111A); wherein the third light source (109) is configured to emit at least one third infrared light (115C) toward the bottom edge (103AA) of the third semiconductor element (105C).The third infrared light (115C) forms an acute angle (119A) with the bottom surface (118) of the third semiconductor element (105C) when it reaches the bottom edge (103AA) of the third semiconductor element (105C); the second light manipulation device (113B) is configured to reflect the third infrared light (115C) from the third light source (109) toward the bottom edge (103AA) of the third semiconductor element (105C); and is configured to reflect the third infrared light (115C) reflected from the bottom edge (103AA) to the first image capturing device (111A). The first image capturing device (111A) is configured to capture an image (401) consisting of a first sub-image (403) and a second sub-image (405); wherein, when the first infrared light (115A) from the first light source (107), the second infrared light (115B) from the second light source (108), and the third infrared light (115C) from the third light source (109) are emitted toward the bottom edge (103AA) of the first semiconductor element (105A), and when the first semiconductor element (105A) is located at the second station (207B) of the turntable, the first sub-image (403) is about the bottom edge (103AA) of the first semiconductor element (105A). The bottom edge (103AA) of the first semiconductor element (105A); wherein, when the fourth infrared light (115D) from the fourth light source (213), the fifth infrared light (115E) from the fifth light source (215), and the third infrared light (115C) from the third light source (109) are emitted toward the bottom edge (103AA) of the third semiconductor element (105C), and when the third semiconductor element (105C) is located at the fourth station (207D) of the turntable, the second sub-image (405) is about the bottom edge (103AA) of the third semiconductor element (105C).

3. The system (101) for detecting the bottom edge of a semiconductor element as described in claim 2, wherein, The plurality of turntable stations include a first turntable station (207A), a second turntable station (207B), a third turntable station (207C), and a fourth turntable station (207D); wherein the turntable is configured to rotate to transfer the semiconductor device from the first turntable station (207A) to the second turntable station (207B), the third turntable station (207C), the fourth turntable station (207D), and back to the first turntable station (207A).

4. A method for detecting the bottom edge of a semiconductor element, the method comprising the steps of: (i) emitting at least one first infrared light (115A) from at least one first light source (107) through the top surface (117) of a first semiconductor element (105A) to the bottom edge (103AA) of the first semiconductor element (105A); wherein, The first infrared light (115A) forms an acute angle (119A) with the bottom surface (118) of the first semiconductor element (105A) when it reaches the bottom edge (103AA) of the first semiconductor element (105A); simultaneously, it emits at least one second infrared light (115B) from at least one second light source (108) to the bottom edge (103AA) of the first semiconductor element (105A) through the first side surface (116A) of the first semiconductor element (105A); wherein, the second infrared light (115B) forms an acute angle (119A) with the bottom surface (118) of the first semiconductor element (105A) when it reaches the bottom edge (103AA) of the first semiconductor element (105A). The bottom surface (118) of a semiconductor element (105A) forms an obtuse angle (119B); at the same time, at least one third infrared light (115C) from at least one third light source (109) is emitted through the top surface (117) of the semiconductor element (105A) to the bottom edge (103AA) of the first semiconductor element (105A) before being reflected from the first light manipulation device (113A); wherein the third infrared light (115C) forms an acute angle (119A) with the bottom surface (118) of the first semiconductor element (105A) when it reaches the bottom edge (103AA) of the first semiconductor element (105A). (ii) The first infrared light (115A), the second infrared light (115B) and the third infrared light (115C) reflected from the bottom edge (103AA) of the first semiconductor element (105A) are reflected to the first image capturing device (111A); (iii) At least one image (401) of the bottom edge (103AA) of the first semiconductor element (105A) is captured by the first image capturing device (111A).

5. The method for detecting the bottom edge of a semiconductor element as claimed in claim 4, the method further comprising the steps prior to step (i): (a) rotating the turret (203) to convey a first semiconductor element (105A) along the circumference of the turret (203) to a first turret station (209A); ​​(b) receiving the first semiconductor element (105A) from the turret (203) at a first turntable station (207A) of at least one turntable at the first turret station (209A); ​​(c) rotating the turret (203) to convey a second semiconductor element (105B) along the circumference of the turret (203) to the first turret station (209A) while rotating the turntable until the first semiconductor element (105A) is located at a second turntable station (207B) of the turntable; (d) Receiving the second semiconductor element (105B) from the first turret station (209A) of the turret (203) at the first station (207A) of the turntable; (e) Rotating the turret (203) to convey the third semiconductor element (105C) to the first turret station (209A) along the circumference of the turret (203), while rotating the turntable until the second semiconductor element (105B) is located at the second station (207B) of the turntable and the first semiconductor element (105A) is located at the third station (207C) of the turntable; (f) Receiving the third semiconductor element (105C) from the first turret station (209A) of the turret (203) at the first station (207A) of the turntable. (g) Rotate the turret (203) to convey the fourth semiconductor element (105D) along the circumference of the turret (203) to the first station (209A) of the turret, while simultaneously rotating the turntable until the third semiconductor element (105C) is located at the second station (207B) of the turntable, and the second semiconductor element (105B) is located at the third station (207C) of the turntable, and the first semiconductor element (105A) is located at the fourth station (207D) of the turntable; (h) Receive the fourth semiconductor element (105D) from the first station (209A) of the turret (203) at the first station (207A) of the turntable; wherein, If the first station of the turntable (207A) is equipped with a semiconductor element before performing steps (b), (d), (f), or (h), the semiconductor element is transferred to the first station of the turret (209A) of the turret (203); wherein step (i) further includes the following operation: emitting at least one fourth infrared light (115D) from at least one fourth light source (213) to the bottom edge (103AA) of the third semiconductor element (105C); wherein the fourth infrared light (115D) forms an acute angle (119A) with the bottom surface (118) of the third semiconductor element (105C) when it reaches the bottom edge (103AA) of the third semiconductor element (105C); simultaneously emitting at least one fifth infrared light (115E) from at least one fifth light source (215) to the bottom edge (103AA) of the third semiconductor element (105C); wherein the fifth infrared light (115E) forms an acute angle (119A) with the bottom surface (118) of the third semiconductor element (105C) when it reaches ... edge (119A) of the third semiconductor element (105C) when it reaches the bottom edge (103AA) of the third semiconductor element (105C); wherein the fifth infrared light (115E) forms an acute angle (11 The external light (115E) forms an obtuse angle (119B) with the bottom surface (118) of the third semiconductor element (105C) when it reaches the bottom edge (103AA) of the third semiconductor element (105C); at the same time, the third infrared light (115C) from the third light source (109) is emitted to the bottom edge (103AA) of the third semiconductor element (105C) through the second light manipulation device (113B); wherein the third infrared light (115C) forms an acute angle (119A) with the bottom surface (118) of the third semiconductor element (105C) when it reaches the bottom edge (103AA) of the third semiconductor element (105C). Step (ii) further includes the following operation: reflecting the fourth infrared light (115D), the fifth infrared light (115E) and the third infrared light (115C) reflected from the bottom edge (103AA) of the third semiconductor element (105C) to the first image capturing device (111A); Step (iii) further includes the following operation: capturing the image (401) of the bottom edge (103AA) of the third semiconductor element (105C) through the first image capturing device (111A).

Images