Manufacturing method of stretchable wiring structure

Abstract

A method for fabricating a stretchable circuit structure includes: forming a first insulating material layer on a stretchable material layer; forming a conductive material layer on the first insulating material layer; patterning the conductive material layer to form a conductor layer; forming a second insulating material layer on the first insulating material layer and the conductor layer; patterning the second insulating material layer to form a second insulating layer; forming a first hard mask layer on the second insulating layer and the first insulating material layer; patterning the first insulating material layer using the first hard mask layer as a mask to form a first insulating layer; removing the first hard mask layer after forming the first insulating layer; forming a second hard mask layer on a second insulating layer, the first insulating layer, and the stretchable material layer after removing the first hard mask layer; and patterning the stretchable material layer using the second hard mask layer as a mask to form a substrate.

Claims

1. A method for manufacturing a stretchable circuit structure, comprising: A first insulating material layer is formed on a stretchable material layer; A first conductive material layer is formed on the first insulating material layer; The process involves: patterning the first conductive material layer to form a first conductive layer; forming a second insulating material layer on the first insulating material layer and the first conductive layer; patterning the second insulating material layer to form a second insulating layer; forming a first rigid mask layer on the second insulating layer, the first conductive layer, and the first insulating material layer; patterning the first insulating material layer using the first rigid mask layer as a mask to form a first insulating layer; removing the first rigid mask layer after forming the first insulating layer; forming a second rigid mask layer on the second insulating layer, the first conductive layer, the first insulating layer, and the stretchable material layer after removing the first rigid mask layer; and patterning the stretchable material layer using the second rigid mask layer as a mask to form a substrate.

2. The method for manufacturing a stretchable circuit structure as described in claim 1, wherein the materials of the first insulating layer and the second insulating layer are organic materials.

3. A method for manufacturing a stretchable circuit structure as described in claim 1, wherein the material of the first rigid mask layer includes a metal oxide.

4. A method for manufacturing a stretchable circuit structure as described in claim 1, wherein after forming the substrate, the method further includes: Remove the second rigid mask layer, wherein the material of the second rigid mask layer includes metal oxides.

5. A method for manufacturing a stretchable circuit structure as described in claim 1, wherein after forming the substrate, the method further includes: The second rigid cover layer is retained, wherein the material of the second rigid cover layer is an inorganic insulating material.

6. A method for manufacturing a stretchable circuit structure as described in claim 1, further comprising, before patterning the second insulating material layer: A second conductive material layer is formed on the second insulating material layer; The second conductive material layer is patterned to form a second conductive layer; A third insulating material layer is formed on the second conductive layer; the second insulating material layer and the third insulating material layer are patterned to form the second insulating layer and the third insulating layer; and the first rigid mask layer is formed on the third insulating layer, the second conductive layer, the second insulating layer, the first conductive layer and the first insulating material layer.

7. The method for manufacturing a stretchable circuit structure as described in claim 6, further comprising, before patterning the second insulating layer and the third insulating layer: A third conductive material layer is formed on the third insulating material layer; The third conductive material layer is patterned to form a third conductor layer; a fourth insulating material layer is formed on the third conductor layer; the second insulating material layer, the third insulating material layer, and the fourth insulating material layer are patterned to form the second insulating layer, the third insulating layer, and the fourth insulating layer; and the first rigid mask layer is formed on the fourth insulating layer, the third conductor layer, the third insulating layer, the second conductor layer, the second insulating layer, the first conductor layer, and the first insulating material layer.

8. A method for manufacturing a stretchable circuit structure as described in claim 1, wherein after forming the second insulating layer, the method further includes: A second conductive material layer is formed on the second insulating layer; The second conductive material layer is patterned to form a second conductive layer; A third insulating material layer is formed on the second conductive layer; the third insulating material layer is patterned to form a third insulating layer; The first rigid cover layer is formed on the third insulating layer, the second conductive layer, the second insulating layer, the first conductive layer and the first insulating material layer.

9. A method for manufacturing a stretchable circuit structure as described in claim 8, further comprising, before forming the second conductive material layer: A first dielectric material layer is formed on the second insulating layer; The first dielectric material layer is patterned to form a first dielectric layer, wherein the first dielectric layer covers the sidewalls of the second insulating layer, and the material of the first dielectric layer is an inorganic material.

10. A method for manufacturing a stretchable circuit structure as described in claim 9, wherein the second conductive layer is in contact with both the first dielectric layer and the second insulating layer.

11. A method for manufacturing a stretchable circuit structure as described in claim 8, wherein after forming the third insulating layer, the method further includes: A third conductive material layer is formed on the third insulating layer; The third conductive material layer is patterned to form a third conductor layer; a fourth insulating material layer is formed on the third conductor layer; the fourth insulating material layer is patterned to form a fourth insulating layer; and the first rigid mask layer is formed on the fourth insulating layer, the third conductor layer, the third insulating layer, the second conductor layer, the second insulating layer, the first conductor layer and the first insulating material layer.

12. A method for manufacturing a stretchable circuit structure as described in claim 11, wherein after forming the fourth insulating layer, the method further includes: A fifth insulating material layer is formed on the fourth insulating layer; Pattern the fifth insulating material layer to form a fifth insulating layer; The first rigid cover layer is formed on the fifth insulating layer, the fourth insulating layer, the third conductor layer, the third insulating layer, the second conductor layer, the second insulating layer, the first conductor layer and the first insulating material layer.

13. A method for manufacturing a stretchable circuit structure as described in claim 8, wherein after forming the third insulating layer, the method further includes: A fourth insulating material layer is formed on the third insulating layer; Pattern the fourth insulating material layer to form a fourth insulating layer; The first rigid cover layer is formed on the fourth insulating layer, the third insulating layer, the second conductor layer, the second insulating layer, the first conductor layer and the first insulating material layer.

14. A method for manufacturing a stretchable circuit structure as described in claim 13, further comprising, before forming the fourth insulating layer: A second dielectric material layer is formed on the third insulating layer; The second dielectric material layer is patterned to form a second dielectric layer, wherein the second dielectric layer covers the third insulating layer, and the material of the second dielectric layer is an inorganic material.

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