90 GHz LIQUID CRYSTAL MILLIMETER-WAVE SWITCH STRUCTURE

Abstract

A 90 GHz liquid crystal millimeter-wave switch structure comprises a first substrate layer, a second substrate layer, a first surface unit, a second surface unit, a third surface patch, a fourth surface patch, and a liquid crystal layer. The first surface unit extends different microstrip lines to both ends, and the liquid crystal layer is sandwiched between the second surface unit and the third surface patch. By applying a bias voltage to the liquid crystal layer, the conduction and shutdown of different microstrip lines are switched to achieve the switching power switching mechanism.

Claims

1. A 90 GHz liquid crystal millimeter-wave switch structure, comprising: A first substrate layer has a first upper surface and a first lower surface, and the first substrate layer is provided with a first bias hole, a second bias hole and a third bias hole; a second substrate layer has a second upper surface and a second lower surface; a first surface unit is disposed on the first upper surface, the first surface unit extends a first microstrip line from one end of the first upper surface, the first microstrip line extends two symmetrical second meandering microstrip lines to both sides, and the two second meandering microstrip lines further extend a third extended microstrip line to the edge of the first upper surface; a second surface unit is disposed on the first lower surface, the second surface unit includes a second surface right patch and a second surface left patch, the second surface right patch and the second surface left patch are disposed adjacent to each other, and there is a gap between the second surface right patch and the second surface left patch; A third surface mount is disposed on the second upper surface, the size of the third surface mount is larger than the size of the second surface unit, and the position of the third surface mount is relative to the position of the third bias via; a liquid crystal layer is stacked between the second surface unit and the third surface mount; a fourth surface mount is disposed on the second lower surface and is used to cover the second lower surface; wherein, a positive bias voltage is applied to the second right surface mount or the second left surface mount through the first bias via or the second bias via, and a negative bias voltage is applied to the third surface mount through the third bias via, in order to control the liquid crystal layer to modulate the amplitude of the passing electromagnetic waves, thereby achieving a switching power switching mechanism.

2. The 90 GHz liquid crystal millimeter-wave switch structure as described in claim 1, wherein the first microstrip line system is an input terminal, the third extended microstrip line system extending from the left side of the first microstrip line is a first output terminal, and the third extended microstrip line system extending from the right side of the first microstrip line is a second output terminal.

3. The 90 GHz liquid crystal millimeter-wave switch structure as described in claim 2, wherein the position of the right patch on the second surface corresponds to the position of the first bias hole, and bias voltage is applied to the right patch on the second surface and the third surface patch through the first bias hole and the third bias hole respectively, and the liquid crystal layer is in a biased state, so that the input terminal can be turned on towards the first output terminal, while the path from the input terminal to the second output terminal will be turned off.

4. The 90 GHz liquid crystal millimeter-wave switch structure as described in claim 2, wherein the position of the left patch on the second surface corresponds to the position of the second bias hole, and bias voltage is applied to the left patch on the second surface and the third surface patch through the second bias hole and the third bias hole respectively, and the liquid crystal layer is in a biased state, so that the input terminal can be turned on towards the second output terminal, while the path from the input terminal to the first output terminal will be turned off.

5. The 90 GHz liquid crystal millimeter-wave switch structure as described in claim 2, wherein the position of the right patch on the second surface corresponds to the position of the first bias hole, the position of the left patch on the second surface corresponds to the position of the second bias hole, and when the first bias hole, the second bias hole and the third bias hole are not biased, the liquid crystal layer is in an unbiased state, so that the paths from the input terminal to the first output terminal and the second output terminal are both closed.

6. The 90 GHz liquid crystal millimeter-wave switch structure as described in claim 1, wherein the second surface right patch, the second surface left patch, the third surface patch and the fourth surface patch are made of metal.

7. The 90 GHz liquid crystal millimeter-wave switch structure as described in claim 1, wherein both the right patch and the left patch of the second surface are provided with a plurality of rectangular openings, and the plurality of rectangular openings of the right patch of the second surface and the plurality of rectangular openings of the left patch of the second surface are symmetrically distributed.

8. The 90 GHz liquid crystal millimeter-wave switch structure as described in claim 1, wherein the size of the liquid crystal layer is greater than or equal to the size of the second surface unit.

9. The 90 GHz liquid crystal millimeter-wave switch structure as described in claim 1, wherein the second surface right patch, the second surface left patch, and the third surface patch are rectangular.

10. The 90 GHz liquid crystal millimeter-wave switch structure as described in claim 1, wherein the structural shape of the fourth surface patch corresponds to the structural shape of the second lower surface.

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