Manufacturing method and reading method of semiconductor device

Abstract

A method for manufacturing a semiconductor device includes: performing a doping implantation process on a substrate to form a semiconductor channel in the substrate; implanting gaseous impurities into the semiconductor channel to give a first region and a second region of the semiconductor channel different impurity concentrations; and forming a first gate and a second gate on the semiconductor channel, wherein the first gate and the first region of the semiconductor channel respectively overlap the first region and the second region of the semiconductor channel, wherein the first gate and the first region of the semiconductor channel form a first transistor element, and the second gate and the second region of the semiconductor channel form a second transistor element, and a first threshold voltage of the first transistor element is different from a second threshold voltage of the second transistor element. Furthermore, a method for reading out a semiconductor device is also provided.

Claims

1. A method for manufacturing a semiconductor device, comprising: The substrate is subjected to doping implantation to form a semiconductor channel in the substrate; Gas impurities are implanted into the semiconductor channel to give the first region and the second region of the semiconductor channel different impurity concentrations; and a first gate and a second gate are formed on the semiconductor channel, with the first gate and the second gate overlapping the first region and the second region of the semiconductor channel, respectively. The first gate and the first region of the semiconductor channel form a first transistor element, and the second gate and the second region of the semiconductor channel form a second transistor element. The first threshold voltage of the first transistor element is different from the second threshold voltage of the second transistor element.

2. A method for manufacturing a semiconductor device as claimed in claim 1, wherein the gaseous impurities include nitrogen, oxygen, or a combination thereof.

3. The method of manufacturing a semiconductor device as claimed in claim 1, further comprising forming a first wire and a second wire on the first gate and the second gate, wherein the first wire and the second wire are electrically connected to opposite sides of the first region of the semiconductor channel, respectively.

4. A method of manufacturing a semiconductor device as claimed in claim 3, wherein the first wire and the second wire are electrically connected to opposite sides of the second region of the semiconductor channel, respectively.

5. The method of manufacturing a semiconductor device as claimed in claim 1, further comprising forming an insulating layer on the substrate prior to the dopant implantation process, wherein the semiconductor channel is adjacent to the lower surface of the insulating layer.

6. The method of manufacturing a semiconductor device as claimed in claim 1, further comprising forming an isolation structure on the substrate prior to the dopant implantation process, wherein the isolation structure surrounds the first transistor element and the second transistor element.

7. A method of manufacturing a semiconductor device as claimed in claim 1, wherein the semiconductor channel further includes a third region, and a third gate is formed on the semiconductor channel while the first gate and the second gate are formed thereon, wherein the third gate overlaps the third region of the semiconductor channel, and the third gate and the third region of the semiconductor channel form a third transistor element.

8. A method for reading a semiconductor device, comprising: The specified characteristics of the semiconductor device manufactured by the method of manufacturing the semiconductor device as described in claim 1 are divided into multiple groups; Assign a corresponding code to each of the plurality of groups; and arrange the corresponding codes of the plurality of groups to which each of the specified characteristics belongs to obtain the identification code of the semiconductor device.

9. A method for reading a semiconductor device as claimed in claim 8, wherein the plurality of specified characteristics are the output currents of the first transistor element and the second transistor element at the same gate voltage.

10. The method for reading a semiconductor device as claimed in claim 9, wherein the gate voltage is greater than the first threshold voltage and the second threshold voltage.

11. The method for reading a semiconductor device as claimed in claim 9, wherein the corresponding codes for arranging the groups to which the plurality of specified characteristics belong are arranged in the order of the first transistor element and the second transistor element.

12. The method for reading a semiconductor device as claimed in claim 8, wherein the plurality of specified characteristics are measured potentials of the first transistor element at different gate voltages.

13. The method of reading a semiconductor device as claimed in claim 12, wherein one of the different gate voltages is less than the first threshold voltage, and the other of the different gate voltages is equal to or greater than the first threshold voltage.

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