Semiconductor wafer processing device

Abstract

This invention provides a semiconductor device that improves device performance and reliability. The semiconductor wafer processing apparatus includes: a chamber; and a spray head configured to supply gas into the chamber, wherein the spray head includes: a plate; a plurality of first spray hole groups located in a first column starting from the center of the plate; and a second spray hole group located in a second column outside the first column, wherein each of the first spray hole groups includes a plurality of first spray holes, and when L is the average distance from the center of the plate to each spray hole in each of the first spray hole groups, the number of first spray holes with a distance less than L from the center of the plate is greater than the number of first spray holes with a distance greater than L from the center of the plate.

Description

Technical Field

[0001] This application claims the priority of Korean Patent Application No. 10-2021-0071978, filed on Jun. 3, 2021, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety.

[0002] This disclosure relates to a semiconductor wafer processing apparatus.

Prior Art

[0003] Generally, semiconductor devices are manufactured through a plurality of unit processes including a wafer thin film deposition process and a wafer etching process. Among the processes, the etching process is performed by spraying a gas onto a semiconductor wafer through a showerhead in a chamber isolated from the outside. Since the surface of the semiconductor wafer should be precisely processed down to very small units, the gas should be sprayed uniformly from the showerhead onto the semiconductor wafer during the process of performing the semiconductor wafer processing in the chamber.

Summary of the Invention

[0004] However, the degree of gas spraying may be non-uniform depending on the position on the semiconductor wafer due to factors such as the asymmetric structure of the chamber used in the process or the asymmetric structure of the gas pipe connected to the showerhead. This can adversely affect the process uniformity of the semiconductor wafer. Therefore, an exemplary embodiment can provide a showerhead capable of supplying gas more uniformly so that the semiconductor wafer can be processed more uniformly as a whole.

[0005] Aspects of the present disclosure provide a semiconductor wafer processing apparatus that allows gas to be sprayed more uniformly onto a wafer. The objectives of the present disclosure are not limited to the above objectives, and those of ordinary skill in the art will clearly understand other objectives not mentioned in the present disclosure from the following description.

[0006] According to an aspect of the present disclosure, there is provided a semiconductor wafer processing apparatus including: a chamber; and a showerhead configured to supply gas into the chamber, wherein the showerhead includes: a plate; a plurality of first spray hole groups located in a first row starting from the center of the plate; and a second spray hole group located in a second row outside the first row, wherein each of the first spray hole groups includes a plurality of first spray holes, and when L is the average value of the distances from the center of the plate to each spray hole in each of the first spray hole groups, the number of first spray holes having a distance from the center of the plate less than L is greater than the number of first spray holes having a distance from the center of the plate greater than L.

[0007] According to another aspect of the present disclosure, a semiconductor wafer processing apparatus is provided, including: a chamber; and a showerhead configured to supply a gas into the chamber, wherein the showerhead includes: a plate; a plurality of first jet hole groups located in a first row starting from the center of the plate; and a plurality of second jet hole groups located in a second row outside the first row, wherein each of the first jet hole groups includes a plurality of jet holes, and the number of jet holes located at a first distance from the center of the plate is greater than the number of jet holes located at a second distance farther than the first distance, and each of the second jet hole groups includes a plurality of jet holes, and the number of jet holes located at a third distance from the center of the plate is less than the number of jet holes located at a fourth distance farther than the third distance.

Embodiments

[0009] Hereinafter, example embodiments in accordance with the technical spirit of the present disclosure will be described with reference to the accompanying drawings.

[0010] FIG. 1 is a diagram for describing a semiconductor wafer processing apparatus according to an example embodiment of the present disclosure.

[0011] Referring to FIG. 1, the semiconductor wafer processing apparatus 10 may include: a chamber 100, a gas input end 200 configured to supply a gas into the chamber; a showerhead 300 configured to inject the gas supplied from the gas input end 200; a wafer support 400 and / or a gas output end 500.

[0012] The chamber 100 may include a wafer inlet 110, a cantilever bracket 120 and / or an internal space 130 installed in the chamber 100. The chamber 100 may maintain the internal space 130 in a sealed state or a vacuum state during a semiconductor wafer processing process via a pump (not shown). The wafer inlet 110 may be installed on one side wall of the chamber 100 to input a semiconductor wafer into the internal space 130. The cantilever bracket 120 may fix various devices inside the chamber 100. The cantilever bracket 120 may be installed on the wall opposite to the wafer inlet 110. The gas input end 200 may include a gas supply pipe 210 and / or a gas branch pipe 220 connected to the gas supply pipe 210. The showerhead 300 may include a supply plate 310 and / or a plate 320. The structures of the gas input end 200 and the showerhead 300 will be described later. The wafer support 400 may fix the wafer so that the position of the wafer can be constantly maintained during the process of processing the wafer inside the chamber 100. The gas output end 500 may discharge the gas injected into the chamber 100 to the outside of the chamber via the showerhead 300.

[0013] FIG. 2 is a diagram for describing the gas input end of FIG. 1. FIG. 3 is a diagram specifically showing the gas branch pipe of the gas input end of FIG. 1.

[0014] Referring to FIG. 2, the gas input end 200 can store the gas provided from the outside to inject the gas into the internal space 130 of the chamber via the gas supply pipe 210. The gas branch pipe 220 can be formed in a branched shape with several branches, so that the gas provided from the gas supply pipe 210 can be sprayed in a wide area. For example, the gas branch pipe 220 can be installed on the supply plate 310 as shown in FIG. 2 in a cross-shaped branch shape. The gas branch pipe 220 can include a plurality of holes connected to the supply plate 310 to supply gas to the supply plate 310. For example, when the gas branch pipe 220 has a cross-shaped branch shape as shown in FIG. 2, the gas can be supplied to the supply plate 310 below the gas branch pipe 220 through the holes located at the ends of the cross shape of the gas branch pipe 220. The gas branch pipe 220 can also be positioned above the supply plate 310 as shown in FIG. 2, and can also have a structure encapsulated together with the supply plate 310.

[0015] FIG. 3 is a diagram showing the structure of the gas branch pipe 220 from another angle.

[0016] Referring to FIG. 3, the gas branch pipe 220 can have a cross-shaped branch shape extending in a direction parallel to the supply plate 310. Each branch of the gas branch pipe 220 is formed with holes (not shown), and can be connected to each of the supply pipes of the supply plate 310. Although FIG. 3 shows that the gas branch pipe 220 has a cross shape, the example embodiments are not limited to this, and each branch can have a shape extending to the edge in various directions, and the various directions include two directions or three directions from the center of the supply plate 310.

[0017] Next, the structure of the shower head 300 of FIG. 1 will be described with reference to FIGS. 4 to 6.

[0018] FIG. 4 is a diagram for describing the stacked structure of the shower head 300 of FIG. 1. FIG. 5 is a diagram showing the supply plate 310 in the direction A of FIG. 4. FIG. 6 is a diagram showing the plate 320 in the direction B of FIG. 4.

[0019] First, referring to FIG. 4, the showerhead 300 may include a supply plate 310 and / or a plate 320. The upper portion of the supply plate 310 may be connected to the gas branch pipe 220, and the lower portion of the supply plate 310 may be connected to the plate 320. The plate 320 may be formed parallel to the supply plate 310. Referring to FIGS. 5 and 6, the supply plate 310 may include: a supply plate center 311, fastening holes (not shown), alignment holes (not shown), and / or supply holes 312 and supply pipes (not shown), and the plate 320 may include a plate center 321, fastening holes (not shown), alignment holes (not shown), and / or a jet hole group 322. The supply plate center 311 and the plate center 321 may correspond to the center of each circle when the supply plate 310 and the plate 320 have a circular shape. When the supply plate 310 and the plate 320 are coupled, the supply plate center 311 may correspond to the plate center 321, and the fastening holes (not shown) may be formed such that the plate 320 can be fixed to the supply plate 310 corresponding to each fastening hole (not shown) of the plate 320. Similarly, the alignment holes (not shown) may be formed such that the plate 320 can be accurately fixed to the supply plate 310 corresponding to each alignment hole (not shown) of the plate 320. The fastening holes (not shown) and the alignment holes (not shown) may have a structure that can be fixed by bolts, for example.

[0020] Referring to FIGS. 3 and 5, the supply holes 312 may be formed in a plurality of rows on the lower portion of the supply pipe 318, and the supply pipe 318 is arranged along a virtual concentric circle relative to the center of the supply plate 310. For example, as shown in FIG. 5, the supply holes 312 are formed in eight rows along a virtual concentric circle relative to the center of the supply plate 310. When the first row to the eighth row are defined in the order starting from the closest row to the supply plate center 311, the supply pipes in the first row may include 7 supply holes 312, the supply pipes in the second row may include 17 supply holes 312, the supply pipes in the third row may include 28 supply holes 312, the supply pipes in the fourth row may include 40 supply holes 312, the supply pipes in the fifth row may include 48 supply holes 312, the supply pipes in the sixth row may include 56 supply holes 312, the supply pipes in the seventh row may include 64 supply holes 312, and the supply pipes in the eighth row may include 72 supply holes 312. However, the exemplary embodiments are not limited thereto, and the supply holes 312 of the supply plate 310 may be formed in any of various configuration structures.

[0021] The injection hole groups 322 of the plate 320 can be formed to correspond to each supply hole 312 of the supply plate 310. Referring to FIGS. 5 and 6, when the plate 320 is coupled to the supply plate 310, respectively, the injection hole group 322_a can correspond to the supply hole 312_a, the injection hole group 322_b can correspond to the supply hole 312_b, and the injection hole group 322_c can correspond to the supply hole 312_c. However, the exemplary embodiments are not limited to this configuration. Additionally, each of the injection hole groups 322 can include one or more injection holes. For example, as illustrated in FIG. 6, each of the injection hole groups 322_a can include 3 injection holes, each of the injection hole groups 322_b can include 1 injection hole, and each of the injection hole groups 322_c can include 1 injection hole. The gas provided from the gas input end 200 via the stacked structure of the showerhead 300 can gradually diffuse in a wide area as it passes through the gas branch pipe 220, the supply pipe 318, the supply holes 312, and the injection holes.

[0022] FIG. 7 is an enlarged view of the region C in FIG. 6.

[0023] Referring to FIGS. 6 and 7, the number of the injection hole groups 323 formed in the first column can be 7. Additionally, the number of the sub-injection holes 323_1, the sub-injection holes 323_2, and the sub-injection holes 323_3 included in each injection hole group 323 can be 3. Although FIGS. 6 and 7 illustrate exemplary embodiments in which the number of the injection hole groups 323 is 7 and the number of the sub-injection holes included in each injection hole group 323 is 3, the exemplary embodiments are not limited to this. For example, each injection hole group 323 can include a different number of sub-injection holes. The distance D1 between one sub-injection hole 323_3 and another sub-injection hole 323_1 of a certain injection hole group 323 is less than the distance D2 between the sub-injection hole 323_3 and any sub-injection hole in another adjacent injection hole group. Therefore, the injection hole group 323 can be defined.

[0024] For each injection hole, the distance from the plate center 321 to the injection hole of the injection hole group 323 can be different. Referring to FIG. 7, L is the average value of the distances from the plate center 321 to each injection hole of the injection hole group 323. The distances L1 from the plate center 321 to the sub-injection holes 323_1 and 323_3 are less than the distance L2 from the plate center 321 to the sub-injection hole 323_2. In some exemplary embodiments, L1 < L < L2 is established.

[0025] Among the injection holes in the injection hole group 323, the number of sub-injection holes 323_1 and sub-injection holes 323_3 whose distance from the plate center 321 is less than L can be greater than the number of sub-injection holes 323_2 whose distance from the plate center 321 is greater than L. Referring to FIG. 7, the number of sub-injection holes 323_1 and sub-injection holes 323_3 located at a distance L1 from the plate center 321 is 14, and the number of sub-injection holes 323_2 located at a distance L2 from the plate center 321 is 7 (14>7). In other words, more injection holes included in the injection hole group 323 formed in the first column can be arranged in a portion relatively closer to the plate center 321.

[0026] The reason for arranging the injection holes on the plate 320 as described above is as follows. Generally, in the process of processing a semiconductor wafer inside the processing chamber, compared with other parts of the semiconductor wafer, gas may not be sufficiently supplied from the plate 320 to the central part of the semiconductor wafer. However, as in this exemplary embodiment, it is possible to supply more gas to the central part of the plate 320 by arranging relatively more injection holes in the central part of the plate 320. As described above, it is possible to improve the process uniformity of the semiconductor wafer by supplying gas more uniformly to the semiconductor wafer as a whole.

[0027] FIG. 8 is a diagram for describing a plate in a semiconductor wafer processing apparatus according to other exemplary embodiments of the present disclosure. FIG. 9 is an enlarged view of region D in FIG. 8. Hereinafter, the differences from the plate in FIG. 6 will be mainly described.

[0028] Referring to FIGS. 5 and 8, the plate 330 may include a plate center 331, fastening holes (not shown), alignment holes (not shown), and / or injection hole groups 322. The supply plate center 311 may correspond to the plate center 331. The fastening holes (not shown) may be formed so that the plate 330 can be fixed to the supply plate 310 corresponding to each fastening hole (not shown) of the plate 330. Similarly, the alignment holes (not shown) may be formed so that the plate 330 can be accurately fixed to the supply plate 310 corresponding to each alignment hole (not shown) of the plate 330.

[0029] The injection hole groups 332 of the plate 330 can be formed to correspond to each supply hole 312 of the supply plate 310. When the plate 330 is coupled to the supply plate 310, the injection hole group 332_a can correspond to the supply hole 312_a, the injection hole group 332_b can correspond to the supply hole 312_b, and the injection hole group 332_c can correspond to the supply hole 312_c. Additionally, each injection hole group 332 can include one or more injection holes. For example, as depicted in FIG. 8, each injection hole group 332_a can include 3 injection holes, each injection hole group 332_b can include 1 injection hole, and each injection hole group 332_c can include 3 injection holes.

[0030] The injection hole groups 332 formed in the seventh and eighth columns of the plate 330 can correspond to the supply holes 312 in the seventh and eighth columns of the supply plate 310.

[0031] FIG. 9 is an enlarged view of the region D in FIG. 8.

[0032] The number of injection holes included in the injection hole group 333 formed in the eighth column CL8 can be greater than the number of injection holes included in the injection hole group 334 formed in the seventh column CL7. Additionally, referring to FIGS. 8 and 9, the number of injection holes included in the injection hole group 333 formed in the eighth column can be greater than the number of injection holes included in the other injection hole groups in the second to sixth columns.

[0033] For example, referring to FIG. 9, the number of injection holes included in the injection hole group 333 formed in the eighth column can be 3, and the number of injection holes included in each injection hole group 334 formed in the seventh column can be 2 (3 > 2). Additionally, referring to FIG. 8, the number of injection holes included in the injection hole groups other than those formed in the first, seventh, and eighth columns can be 1 (3 > 2 > 1). In other words, except for the injection hole groups formed in the first column, the injection hole groups farther from the center 331 of the plate (the injection hole groups positioned closer to the edge of the plate 300) can include a larger number of injection holes. However, the example embodiments are not limited thereto, and each injection hole group of the plate 330 can include various numbers of injection holes.

[0034] The reason for arranging the injection holes on the plate 330 as described above is as follows. Generally, in the process of processing a semiconductor wafer inside a processing chamber, gas may not be sufficiently supplied to the edge portion of the semiconductor wafer compared to other portions of the semiconductor wafer. However, as in the present example embodiments, it is possible to supplement the insufficient gas supply amount by arranging a relatively large number of injection holes in the central portion and the edge portion of the plate 330, thereby improving the process uniformity of the semiconductor wafer.

[0035] FIG. 10 is a diagram for describing a plate 340 in a semiconductor wafer processing apparatus according to still other exemplary embodiments of the present disclosure. FIG. 11 is a perspective view simultaneously showing the plate of FIG. 10 and the gas manifold 220 of FIG. 3 to describe the configuration of the plate of FIG. 10. Hereinafter, the differences from the plate of FIG. 8 will be mainly described.

[0036] Referring to FIGS. 5, 10, and 11, the plate 340 may include a plate center 341, fastening holes (not shown), alignment holes (not shown), and / or a jet hole group 342. The supply plate center 311 may correspond to the plate center 341. The fastening holes (not shown) may be formed such that the plate 340 can be fixed to the supply plate 310 corresponding to each fastening hole (not shown) of the plate 340. Similarly, the alignment holes (not shown) may be formed such that the plate 340 can be accurately fixed to the supply plate 310 corresponding to each alignment hole (not shown) of the plate 340.

[0037] The jet hole group 342 of the plate 340 may be formed to correspond to each supply hole 312 of the supply plate 310. When the plate 340 is coupled to the supply plate 310, the jet hole group 342_a may correspond to the supply hole 312_a, the jet hole group 342_b may correspond to the supply hole 312_b, and the jet hole group 342_c may correspond to the supply hole 312_c. Additionally, each jet hole group 342 may include one or more jet holes. The supply holes 312_c formed in the eighth column of the supply plate 310 may each correspond to the second jet hole group 342_c formed in the eighth column of the plate 340.

[0038] Referring to FIG. 11, holes (not shown) formed at the ends of the gas manifold tubes can be connected to the supply tubes in the eighth row to supply gas to the supply holes 315. At this time, the supply holes in the eighth row of the supply plate 310 can each have different distances to the midpoint between the two supply holes 315 closest to the end of the gas manifold tube (which are the supply hole connected to the end of the gas manifold tube and the supply hole adjacent to the supply hole in the counterclockwise direction). In FIG. 11, S1 is the distance between the supply hole 315 closest to the end on one side of the gas manifold tube and the supply hole 315 closest to the end on the other side of the gas manifold tube adjacent to the said end. The jet hole groups corresponding to the supply holes 316 whose distance to any one of the supply holes 315 on the plate 310 is equal to or farther than the distance (S1) / 2 can include more jet holes than the jet hole groups corresponding to the supply holes 317 formed within the distance S2, where the distance S2 is any one of the distances closer than the distance (S1) / 2. For example, the jet hole group corresponding to the supply hole 316 can include 4 jet holes, and the jet hole group corresponding to the supply hole 317 can include 3 jet holes. However, the plate 340 shown in FIG. 10 is illustrative, and the example embodiments are not limited thereto.

[0039] The reason for arranging the jet holes on the plate 340 as described above is as follows. When gas is supplied to the supply tubes of the supply plate 310 via the gas manifold tubes 220, the supply holes 316 that are far from the holes where the gas manifold tubes 220 and the supply tubes are connected can have a smaller amount of gas received from the gas manifold tubes 220 compared to the supply holes 317 that are relatively closer to the holes. Eventually, in some example embodiments, the gas may be non-uniformly ejected onto the semiconductor wafer, thereby weakening the process uniformity of the semiconductor wafer. In some example embodiments, as in this example embodiment, it is possible to more uniformly adjust the amount of gas ejected onto the semiconductor wafer by arranging relatively more jet holes in the part far from the gas manifold tube, thereby improving the process uniformity of the semiconductor wafer.

[0040] FIG. 12 is a diagram for describing a plate in a semiconductor wafer processing apparatus according to still other example embodiments of the present disclosure. FIG. 13 is a cross-sectional view of a chamber for describing the plate of FIG. 12. FIG. 14 is a structural diagram for describing the structure of the chamber of FIG. 13. Hereinafter, the differences from the plate of FIG. 10 will be mainly described.

[0041] Referring to FIGS. 5 and 12, the plate 350 may include a plate center 351, fastening holes (not shown), alignment holes (not shown), and / or a jet hole group 352. The supply plate center 311 may correspond to the plate center 351. The fastening holes (not shown) may be formed such that the plate 350 can be fixed to the supply plate 310 corresponding to each fastening hole (not shown) of the plate 350. Similarly, the alignment holes (not shown) may be formed such that the plate 350 can be accurately fixed to the supply plate 310 corresponding to each alignment hole (not shown) of the plate 350.

[0042] The jet hole group 352 of the plate 350 may be formed to correspond to each supply hole 312 of the supply plate 310. When the plate 350 is coupled to the supply plate 310, the jet hole group 352_a may correspond to the supply hole 312_a, the jet hole group 352_b may correspond to the supply hole 312_b, and the jet hole group 352_c may correspond to the supply hole 312_c. Additionally, each jet hole group 352 may include one or more jet holes. For example, as shown in FIG. 12, each jet hole group 352_a may include 3 jet holes, each jet hole group 352_b may include 2 jet holes, and each jet hole group 352_c may include 3 jet holes.

[0043] Referring to FIGS. 12 and 13, the area including the jet hole groups in the fifth and sixth columns formed on the plate 350 may be classified into area A (A) and area B (B). The y-direction distance T1 from the wafer inlet 110 to any one of the jet hole groups belonging to area A is greater than the distance T from the wafer inlet 110 to the plate center 351. On the other hand, the y-direction distance T2 from the wafer inlet 110 to any one of the jet hole groups belonging to area B is less than the distance T from the wafer inlet 110 to the plate center 351. In some exemplary embodiments, the number of jet holes included in the jet hole groups of area B may be greater than the number of jet holes included in area A. For example, in FIG. 13, the number of jet holes included in each jet hole group of area A is 1, and the number of jet holes included in each jet hole group of area B is 2 (1 < 2). However, the exemplary embodiments are not limited thereto, and the number of jet holes included in the jet hole groups of area A and area B may vary differently.

[0044] The reason for arranging the injection holes on the plate 350 as described above is as follows. Referring to FIG. 14, since the structures occupied by the wafer inlet 110 and the cantilever bracket 120 of the chamber 100 are different from each other, structural asymmetry may occur inside the chamber. Due to this structural asymmetry, gas may not be sufficiently supplied from the showerhead to a part of the semiconductor wafer close to the semiconductor wafer inlet 110. In some exemplary embodiments, such as in the present exemplary embodiment, it is possible to improve the process uniformity of the semiconductor wafer by arranging more injection holes in a part of the plate 350 closer to the wafer inlet 110 (region B in FIG. 13).

[0045] In summary, those of ordinary skill in the art will understand that many variations and modifications can be made to the preferred exemplary embodiments without substantially departing from the principles of the present invention concept. Therefore, the preferred exemplary embodiments of the present invention concept disclosed are for general and descriptive purposes only and are not for restrictive purposes.

Brief Description of the Drawings

[0008] The above and other aspects and features of the present disclosure will become more apparent by referring to the detailed description of its exemplary embodiments with reference to the accompanying drawings, in which: FIG. 1 is a diagram for describing a semiconductor wafer processing apparatus according to an exemplary embodiment of the present disclosure. FIG. 2 is a diagram for describing the gas input end of FIG. 1. FIG. 3 is a diagram specifically showing the gas branch pipe of the gas input end of FIG. 1. FIG. 4 is a diagram for describing the stacked structure of the showerhead of FIG. 1. FIG. 5 is a diagram showing the supply plate in the direction A from FIG. 4. FIG. 6 is a diagram showing the plate in the direction B from FIG. 4. FIG. 7 is an enlarged view of the region C in FIG. 6. FIG. 8 is a diagram for describing the plate in a semiconductor wafer processing apparatus according to another exemplary embodiment of the present disclosure. FIG. 9 is an enlarged view of the region D in FIG. 8. FIG. 10 is a diagram for describing the plate in a semiconductor wafer processing apparatus according to still another exemplary embodiment of the present disclosure. FIG. 11 is a perspective view showing the plate of FIG. 10 and the gas branch pipe of FIG. 3 simultaneously to describe the configuration of the plate of FIG. 10. FIG. 12 is a diagram for describing the plate in a semiconductor wafer processing apparatus according to still another exemplary embodiment of the present disclosure. FIG. 13 is a cross-sectional view of the chamber of the plate of FIG. 12. FIG. 14 is a structural diagram for describing the structure of the chamber of FIG. 13.

Claims

1. A semiconductor wafer processing apparatus, comprising: chamber; and a spray head configured to supply gas to the chamber, wherein the spray head comprises: a plate including a plurality of first spray hole groups in a first column and a second spray hole group in a second column outside the first column, the first column being the innermost column starting from the center of the plate, wherein each of the plurality of first spray hole groups includes a plurality of first spray holes, in each first spray hole group, when L is the average distance from the center of the plate to each first spray hole in each of the plurality of first spray hole groups, the number of first spray holes at a distance L1 from the center of the plate is greater than the number of first spray holes at a distance L2 from the center of the plate, wherein L1 is less than L and L2 is greater than L.

2. The semiconductor wafer processing apparatus of claim 1, wherein the spray head further comprises: a supply plate located on the plate and configured to receive the gas from a gas input terminal to deliver the gas to the plate, the supply plate comprising a plurality of supply holes arranged in a row to correspond to a plurality of spray hole groups.

3. The semiconductor wafer processing apparatus of claim 2, wherein the gas input terminal comprises: a main supply tube; and a plurality of branch tubes branching from the main supply tube, wherein the gas is configured to be supplied to the supply plate via orifices of the branch tubes, the supply orifices comprising a first supply orifice located at a first distance from the orifice of the branch tube and a second supply orifice located at a second distance greater than the first distance, and the number of injection orifices corresponding to the first supply orifice in the second injection orifice group is less than the number of injection orifices corresponding to the second supply orifice in the second injection orifice group.

4. The semiconductor wafer processing apparatus of claim 1, wherein the number of nozzles in the first nozzle group is greater than the number of nozzles in the nozzle groups in a plurality of columns between the first column and the second column.

5. The semiconductor wafer processing apparatus of claim 1, wherein the number of nozzles in the second nozzle group is greater than the number of nozzles in the nozzle groups in a plurality of columns between the first column and the second column.

6. The semiconductor wafer processing apparatus of claim 5, wherein the spray head includes a third group of spray holes in a third column between the second column and the plurality of columns, wherein the number of spray holes in the third group of spray holes is less than the number of spray holes in the second group of spray holes and greater than the number of spray holes in the group of spray holes in the plurality of columns.

7. The semiconductor wafer processing apparatus of claim 6, wherein the number of nozzles in each of the first nozzle group and the second nozzle group is 3, and the number of nozzles in the third nozzle group is 2.

8. The semiconductor wafer processing apparatus of claim 1, wherein the chamber includes a wafer inlet, the spray head includes a plurality of fourth spray hole groups in a column between the first column and the second column, each of the fourth spray hole groups including a plurality of spray holes, M being the distance from the wafer inlet to the center of the plate, and wherein the number of spray holes in each of the fourth spray hole groups whose distance from the wafer inlet toward the center of the plate is less than M is greater than the number of spray holes in each of the fourth spray hole groups whose distance from the wafer inlet toward the center of the plate is greater than M.

9. A semiconductor wafer processing apparatus, comprising: chamber; and a spray head configured to supply gas into the chamber, wherein the spray head comprises: a plate comprising a plurality of first spray hole groups in a first column; and a plurality of second spray hole groups in a second column outside the first column, the first column being the innermost column starting from the center of the plate, wherein each of the first spray hole groups comprises a plurality of spray holes, and in each first spray hole group, the number of spray holes at a first distance from the center of the plate is greater than the number of spray holes at a second distance farther than the first distance, and each of the second spray hole groups comprises a plurality of spray holes, and the number of spray holes at a third distance from the center of the plate is less than the number of spray holes at a fourth distance farther than the third distance.

10. The semiconductor wafer processing apparatus of claim 9, wherein the number of nozzles in each of the first nozzle group and the second nozzle group is greater than the number of nozzles in the nozzle groups other than the first nozzle group and the second nozzle group.

Images