Development processing device and development processing method
Patent Information
- Application Number
- TW111126776
- Authority / Receiving Office
- TW · TW
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2021-07-30
- Filing Date
- 2022-07-18
- Publication Date
- 2026-08-11
- Estimated Expiration
- 2042-07-17
AI Technical Summary
The existing developing process in photolithography results in non-uniform development due to mist leakage, which affects the in-plane uniformity and can cause local cooling of the substrate, especially when using high temperature-sensitive photoresist solutions.
A development processing device with a substrate holding unit, rotation mechanism, developing solution supply, rinse solution supply, and an air suction part surrounding the liquid receiving part to recover mist and control airflow, ensuring uniform development by minimizing airflow at the substrate's peripheral portion.
Improves in-plane uniformity of the development process and effectively recovers mist, preventing local cooling and ensuring consistent development results, especially with high temperature-sensitive photoresist solutions.
Smart Images

Figure TWG2TB001905077_001 
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Figure TWG2TB001905077_003
Abstract
Description
Technical Field
[0001] This invention relates to a developing apparatus and a developing method. Prior Technology
[0002] Patent Document 1 discloses a developing apparatus comprising: a developing solution supply mechanism for supplying developing solution to a substrate coated with photoresist; and a cleaning solution supply mechanism for developing a photoresist pattern on a substrate to which developing solution has been supplied. [Previous Technical Documents] [Patent Literature]
[0003] [Patent Document 1] Japanese Patent Publication No. 2003-178942 Summary of the Invention
[0004] [The problem the invention aims to solve]
[0005] The technology of this invention improves the in-plane uniformity of the developing process and appropriately recovers the droplets of the developing solution. [Methods used to solve problems]
[0006] One aspect of the present invention is a developing apparatus for developing a photoresist film on a substrate, comprising: a substrate holding portion for holding the substrate; a rotating mechanism for rotating the substrate holding portion; a developing liquid supply portion for supplying developing liquid to the substrate held in the substrate holding portion; a rinsing liquid supply portion for supplying rinsing liquid to the substrate held in the substrate holding portion; a liquid receiving portion for receiving developing liquid and rinsing liquid from the substrate held in the substrate holding portion; an exhaust pipe connected to the liquid receiving portion for venting air from the interior of the liquid receiving portion; and an air suction portion provided to surround the outer periphery of the liquid receiving portion. During at least one of the following processes: when the developing liquid supply vents air from the interior of the liquid receiving portion at a lower exhaust volume than during processing using rinsing liquid, or during static development, the air suction portion draws in air and recovers droplets of developing liquid that have leaked to the outside of the liquid receiving portion. [Effects of the Invention]
[0007] According to the present invention, the in-plane uniformity of the developing process can be improved, and the droplets of the developing solution can be appropriately recovered. Simple Explanation of the Diagram
[0008] [Figure 1] is a cross-sectional view schematically showing one example of the structure of the developing apparatus of the first embodiment. [Figure 2] is a longitudinal and cross-sectional view schematically showing an example of the structure of the developing apparatus of the first embodiment. [Figure 3] is a top view of the intake section. [Figure 4] (A) and (B) are diagrams showing the state of the developing apparatus in wafer processing. [Figure 5] (A) and (B) are diagrams showing the state of the developing apparatus in wafer processing. [Figure 6] shows an example of the connection between the lifting mechanism and the exhaust mechanism. [Figure 7] is a diagram showing an example of the structure of the developing apparatus of the second embodiment. [Figure 8] is a diagram showing one example of the structure of the developing apparatus of the third embodiment. [Figure 9] is a diagram showing an example of the structure of the developing apparatus of the third embodiment. Implementation
[0009] [The form in which the invention is implemented]
[0010] In the photolithography process of semiconductor device manufacturing, various processes are performed to form a desired photoresist pattern on a substrate such as a semiconductor wafer (hereinafter referred to as "wafer"). These various processes include, for example, photoresist coating process, which involves supplying photoresist to the substrate to form a photoresist film; exposure process, which involves exposing the photoresist film; and development process, which involves supplying a developer to the exposed photoresist film to develop it.
[0011] The above-described developing process is performed using a developing apparatus. The developing apparatus includes: a substrate holding section for holding a substrate; and a developing solution supply section for supplying developing solution to the substrate held in the substrate holding section. The developing solution is supplied from the developing solution supply section onto the substrate held in the substrate holding section, forming a liquid film of developing solution on the substrate surface, thereby developing the photoresist film on the substrate. Furthermore, the developing apparatus includes a liquid receiving section for receiving developing solution or other liquids that have spilled from the substrate held in the substrate holding section.
[0012] However, when the developer is supplied to the substrate, developer droplets may be generated. These developer droplets may leak to the outside of the liquid receiving part and adhere to the inner wall of the housing containing the liquid receiving part, causing particles or adhering to the developed photoresist film, i.e., the photoresist pattern, on the substrate. This is the main cause of various problems such as adverse effects. Therefore, it is necessary to vent the liquid receiving section to recover developer droplets during development. However, when venting the liquid receiving section during development, a stronger airflow is generated near the outer periphery of the substrate, causing localized cooling of the outer periphery. When using photoresists with high temperature sensitivity during development, such as i-line photoresists, the development results at the outer periphery and the center of the substrate will differ as a result of localized cooling at the outer periphery.
[0013] Therefore, the technology of the present invention improves the in-plane uniformity of the developing process and appropriately recovers the droplets of the developing solution.
[0014] The structure of the developing apparatus and developing method of this embodiment will be described below with reference to the drawings. Furthermore, in this specification, elements having substantially the same functional structure are given the same symbols and repeated descriptions are omitted.
[0015] (First Implementation) <Developing Processing Equipment> Figures 1 and 2 are respectively a longitudinal sectional view and a cross-sectional view schematically showing an example of the structure of the developing apparatus of the first embodiment. Figure 3 is a top view of the suction section, which will be described later.
[0016] As shown in Figures 1 and 2, the developing apparatus 1 has an internally sealable housing 10. A loading / unloading port (not shown) for a wafer W serving as a substrate is formed on the side of the housing 10.
[0017] A rotating chuck 20 is provided inside the housing 10 as a substrate holding portion for holding the wafer W horizontally. The rotating chuck 20 is connected to a chuck drive unit 21, which is a rotation mechanism, via, for example, a shaft 22. The chuck drive unit 21 rotates the rotating chuck 20 about a vertical axis, thereby causing the wafer W held on the rotating chuck 20 to rotate about the vertical axis. The chuck drive unit 21 has, for example, a motor or a cylinder, as a drive source for generating the driving force that drives the rotation of the rotating chuck 20.
[0018] In the region on the back side of the wafer W held in the rotary chuck 20, a plurality of lifting pins 23 (e.g., three) are provided as lifting members for transferring the wafer W between the wafer transport mechanism outside the developing apparatus 1 and the rotary chuck 20. The lifting pins 23 can be freely raised and lowered by means of a pin drive 24 having a motor or cylinder, etc.
[0019] Furthermore, in the region on the back side of the wafer W that is held in place by the rotating chuck 20, a circular plate 25 is arranged to surround the axis 22. The circular plate 25 has a hole 25a through which the axis 22 is inserted, and a hole 25b through which the lifting pin 23 is inserted.
[0020] Furthermore, within the housing 10, there is a "cup body 100, which serves as a liquid receiving portion surrounding the rotating suction cup 20 when viewed from above". The cup body 100 receives "developing solution and rinsing solution that are thrown off or dripped from the wafer W held in the rotating suction cup 20", and guides these developing solutions and rinsing solutions out of the developing processing apparatus 1. Details of the cup body 100 will be described later.
[0021] As shown in Figure 2, tracks 30A and 30B extending along the Y direction (left-right direction in Figure 2) are formed on the negative X-direction side (lower side of Figure 2) of the cup body 100. Tracks 30A and 30B extend from, for example, the outer side of the negative Y-direction side (left side of Figure 2) of the cup body 100 to the outer side of the positive Y-direction side (right side of Figure 2). An arm 31 is provided on track 30A, and an arm 32 is provided on track 30B.
[0022] A developer supply nozzle 33, serving as a developer supply section, is supported on the first arm 31. The developer supply nozzle 33 supplies developer to the wafer W held in the rotating chuck 20. Furthermore, the developer supply nozzle 33 is formed into a cylindrical shape with a developer spray nozzle on its bottom surface. The spray nozzle of the developer supply nozzle 33 is rectangular when viewed from above, and the length of the long side of the spray nozzle is approximately the same as the diameter of the wafer W.
[0023] The developer supply nozzle 33 may also be referred to as a liquid receiving nozzle. The liquid receiving nozzle has: a nozzle for dispensing developer; and a lower end face that expands laterally from the nozzle and is approximately parallel to the surface of the wafer W.
[0024] The first arm 31 can move freely on the track 30A due to the nozzle drive unit 34. This allows the developer supply nozzle 33 to move from the standby section 35 located on the outer side of the Y-direction positive side of the cup body 100 to above the center of the wafer W inside the cup body 100. Furthermore, due to the nozzle drive unit 34, the first arm 31 can be freely raised and lowered, thus adjusting the height of the developer supply nozzle 33. The nozzle drive unit 34 includes, for example, a motor or cylinder, as a drive source for generating the driving force that moves the first arm 31 along the track 30A and raises and lowers the first arm 31.
[0025] A flushing fluid supply nozzle 36, serving as a flushing fluid supply unit, is supported on the second arm 32. The flushing fluid supply nozzle 36 supplies flushing fluid to the wafer W held in the rotating chuck 20. Furthermore, the flushing fluid supply nozzle 36 is formed into a cylindrical shape with a flushing fluid nozzle on its bottom surface. The second arm 32 can move freely on the track 30B due to the nozzle drive unit 37. This allows the rinsing fluid supply nozzle 36 to move from the standby section 38 located on the outer side of the negative Y-direction of the cup body 100 to above the center of the wafer W within the cup body 100. Furthermore, due to the nozzle drive unit 37, the second arm 32 can be freely raised and lowered, thus adjusting the height of the rinsing fluid supply nozzle 36. The nozzle drive unit 37 includes, for example, a motor or cylinder, as a drive source for generating the driving force that moves the second arm 32 along the track 30B and raises and lowers the second arm 32.
[0026] The developer supply nozzle 33 and the rinse fluid supply nozzle 36 are respectively connected to the developer and rinse fluid supply sources via a flow control unit (not shown). The developer and rinse fluid from the supply sources are supplied to the developer supply nozzle 33 and the rinse fluid supply nozzle 36 by adjusting their flow rates, and then ejected onto the wafer W on the rotating chuck 20 through the nozzles 33 and 36. The flow control unit includes, for example, various valves and mass flow controllers.
[0027] Furthermore, as shown in Figure 1, an exhaust port 11 is formed on the bottom wall of the housing 10. An exhaust pipe 12 for venting exhaust from the interior of the housing 10 is connected to the exhaust port 11. The exhaust pipe 12 is connected to an exhaust mechanism 40, which includes an exhaust pump, via a main exhaust pipe 41.
[0028] In order to ensure that the wafer W can pass smoothly between the wafer transport mechanism outside the developing apparatus 1 and the rotary chuck 20, the upper part of the cup body 100 has an open structure, that is, the upper part has an opening 100a. The opening 100a is located at the center of the upper part of the cup body 100 when viewed from above.
[0029] The cup body 100 includes: an inner cup 101; a lower cup 102; an upper cup 103 and an outer cup 104 serving as lifting bodies; and a ring portion 105.
[0030] The inner cup 101 is configured as a "ring-shaped plate surrounding the circular plate 25 when viewed from above". The inner cup 101 has: a guide wall 110 that guides the developer and other liquids spilled from the wafer W to the lower outer side; and a cylindrical vertical wall 111 that extends vertically downward from the outer peripheral end of the guide wall 110.
[0031] The lower cup 102 is located below the inner cup 101. The lower cup 102 has: an annular plate-shaped bottom wall 120 located at the bottom; and cylindrical vertical walls 121-123 extending vertically upward from the bottom wall 120. Vertical wall 121 extends vertically upward from the outer peripheral end of the bottom wall 120; vertical wall 122 extends vertically upward from the inner peripheral end of the bottom wall 120; and vertical wall 123 extends vertically upward from a position between the outer peripheral end and the inner peripheral end of the bottom wall 120.
[0032] A drain port 124 is formed between vertical walls 122 and 123 of the bottom wall 120. A drain pipe 125 for draining the liquid received by the cup body 100 is connected to the drain port 124. Furthermore, an vent port 126 is formed between vertical walls 121 and 123 of the bottom wall 120. An vent pipe 127 for venting the gas inside the cup body 100 (specifically, venting the gas around the wafer W) is connected to the vent port 126.
[0033] Exhaust pipe 127 is connected to exhaust mechanism 40 via main exhaust pipe 41, similar to the aforementioned exhaust pipe 12. A damper 42 is provided on the main exhaust pipe 41 to switch between the following two: exhaust through the housing 10 of the exhaust pipe 12 (hereinafter referred to as "housing exhaust") and exhaust through the cup 100 of the exhaust pipe 127 (hereinafter referred to as "cup exhaust").
[0034] The liquid discharged from the drain port 124 and the gas discharged from the vent port 126 can be separated by the vertical wall 123. In addition, the vertical wall 111 of the inner cup 101 is formed to be located outside the vertical wall 123 so that the liquid guided by the guide wall 110 will be discharged from the drain port 124.
[0035] The upper cup 103 is configured to "cover the outer periphery of the inner cup 101 and the lower cup 102 from above in a ring-like shape when viewed from above". The upper cup 103 has an annular plate wall 130 formed in a ring-like shape with a circular opening 130a slightly larger than the diameter of the wafer W when viewed from above. The annular plate wall 130 is inclined so that it gradually decreases in height towards the outer periphery.
[0036] Furthermore, the upper cup 103 has: a cylindrical vertical wall 131 extending vertically downward from the outer peripheral end of the annular plate wall 130; and an annular rib 132 extending outward from the lower end of the vertical wall 131. The vertical wall 131 and the rib 132 are positioned "between the vertical walls 121 and 123 of the lower cup 102". The gap G1 between the "inner peripheral surface of the upper cup 103" and the "outer peripheral surfaces of the guide wall 110 and the vertical wall 111 of the inner cup 101" constitutes an exhaust flow path that connects to the exhaust port 126, i.e., the exhaust pipe 127, to exhaust gas from the inside of the cup body 100 (specifically, to exhaust gas from the periphery of the wafer W). As mentioned above, the upper cup of the 103 series can be raised or lowered.
[0037] The outer cup 104 is configured to "circularly cover the outer periphery of the upper cup 103 from above". The outer cup 104 has an "annular wall 140 formed, when viewed from above, with a circular opening 140a larger than the diameter of the wafer W". In this embodiment, the opening 140a is inserted into the inner periphery of the annular plate wall 130 of the upper cup 103. The outer periphery of the annular wall 140 is inclined and gradually rises towards the outer periphery. Furthermore, the outer cup 104 has a cylindrical outer peripheral wall 141 extending upward from the outer peripheral end of the annular wall 140. Moreover, the outer cup 104 has an annular folded portion 142 extending downward from the upper end of the outer peripheral wall 141 towards the inner periphery.
[0038] Furthermore, the outer cup 104 is height-adjustable and has a cylindrical vertical wall 143 extending downward from the bottom surface of the inner periphery of the annular wall 140. The vertical wall 143 is positioned "outside the vertical wall 131 of the upper cup 103". Also, the vertical wall 143 is positioned "when the outer cup 104 is lowered, it is housed inside the lower cup 102, and is located inside the vertical wall 121 of the lower cup 102 and inside the annular portion 105".
[0039] The ring portion 105 is configured to "cover the outer periphery of the lower cup 102 and the outer periphery of the rib 132 of the upper cup 103 in a circular shape from above". The ring portion 105 is fixed to, for example, the upper end of the vertical wall 121 of the lower cup 102.
[0040] Relative to the cup body 100, the suction section 200 is configured to surround the outer periphery of the cup body 100. As shown in Figures 2 and 3, the suction section 200 has suction ports 201. The suction ports 201 are configured, for example, as "a plurality of concentric rings arranged with the cup body 100 when viewed from above". Furthermore, the suction section 200 has, for example, "a hollow annular body 202 when viewed from above", with suction ports 201 provided along the top surface of the annular body 202. Each suction port 201 communicates with the hollow portion inside the annular body 202. By venting the interior of the annular body 202 through an exhaust mechanism (not shown in the figures), the suction section 200 can draw air through the suction ports 201.
[0041] The height of the air inlet 201 of the air intake 200 is, for example, below the height of the upper end of the cup body 100, specifically below the height of the upper end of the outer cup 104. The intake section 200 is also adjustable in height, similar to the outer cup 104. In one embodiment, the intake section 200 can be adjusted up and down together with the upper cup 103 and the outer cup 104.
[0042] The upper cup 103, the outer cup 104, and the air intake 200 are connected to a common lifting mechanism 300. The lifting mechanism 300 has a support member 301 that supports the outer cup 104 and the suction part 200. The upper cup 103 is fixed to, for example, the outer cup 104 by means of screwing or the like, thereby being supported by the support member 301 via the outer cup 104. Furthermore, the lifting mechanism 300 has a drive unit 302 that moves the upper cup 103, the outer cup 104, and the suction part 200 up and down by moving the support member 301 up and down. The drive unit 302 has, for example, a motor or a cylinder, as a drive source for generating the driving force to move the support member 301 up and down.
[0043] Furthermore, a fan filter assembly (FFU) 400 is provided above the cup body 100 inside the housing 10, supplying clean air toward the cup body 100, specifically toward the wafer W held by the rotating suction cup 20. The clean air supplied to the cup body 100 passes through the cup body 100 and is then discharged through the exhaust pipe 127.
[0044] As shown in Figure 2, the developing apparatus 1 described above is equipped with a control unit U. The control unit U is a computer equipped with, for example, a CPU and memory, and has a program storage unit (not shown in the figure). The program storage unit stores a program for controlling the processing of the wafer W of the developing apparatus 1. Furthermore, the program can be a program recorded on a computer-readable memory medium, or a program installed from that memory medium onto the control unit U. The memory medium can be temporary or non-temporary. Part or all of the program can also be implemented using dedicated hardware (circuit board).
[0045] <Wafer Processing> Next, an example of wafer processing performed using the developing apparatus 1 configured as described above will be explained. The following processing is performed under the control of the control unit U. Figures 4 and 5 will be used for explanation. Figures 4 and 5 are diagrams showing the state of the developing apparatus 1 in the above wafer processing, showing only the main parts. In the following description, a photoresist film is formed on the surface of the wafer W before it is loaded into the developing apparatus 1, so that the photoresist film has been exposed and then heated.
[0046] (Step S1: Holding the wafer W) First, the wafer W passes through the opening 100a of the cup body 100 and is held in place by the rotating chuck 20. Specifically, firstly, a wafer transport mechanism (not shown) holding the wafer W is inserted into the housing 10 from outside the housing 10 via a transport port (not shown) located on the side of the housing 10. Then, the wafer W is transported above the rotary chuck 20. Next, driven by the pin drive 24, the lifting pin 23 rises, protruding a predetermined distance from the top surface of the rotary chuck 20, transferring the wafer W onto the lifting pin 23.
[0047] Before the wafer W is transferred to the lifting pin 23, the assembly of the upper cup 103, the outer cup 104 and the suction part 200 (hereinafter referred to as the "integrated moving body") moves to the first position by the drive of the lifting mechanism 300. As shown in Figure 4(A), the first position is the position where the upper end of the upper cup 103 is lower than the surface of the wafer W on the rotating suction cup 20.
[0048] Next, driven by the pin drive unit 24, the lifting pin 23 descends. This causes the wafer W to descend and pass through the opening 100a to the top surface of the rotary chuck 20. The wafer W is then held in place by the rotary chuck 20. In this procedure, damper 42 is adjusted to perform housing exhaust in the process of housing exhaust and cup exhaust.
[0049] (Step S2: Treatment with developer) Next, the wafer W held in the rotating chuck 20 is processed with developer, specifically by, for example, supplying developer (step S2A) and static development (step S2B).
[0050] (Step S2A: Supply of developer) In this procedure, a developer is supplied to the wafer W held in the rotating chuck 20 to form a developer film on the wafer W. Specifically, next, with the integrated movable body positioned in the first position and the damper 42 adjusted to exhaust the housing, the suction unit 200 further suctions air. In this state, as shown in FIG4(B), driven by the nozzle drive unit 34, the developer supply nozzle 33 moves above the wafer W. Then, developer is supplied from the developer supply nozzle 33 onto the wafer W to form a developer film. For example, when forming the developer film, the developer supply nozzle 33 is driven by the nozzle drive unit 34, so that the destination of the developer spray from the developer supply nozzle 33 moves from one end of the wafer W in the extension direction of the track 30A to the other end. At this time, the wafer system does not rotate (i.e., it is stationary). When the destination of the developer spray from the developer supply nozzle 33 reaches the other end of the wafer W and forms a developer film, the supply of developer from the developer supply nozzle 33 is stopped, and at the same time, driven by the nozzle drive unit 34, the developer supply nozzle 33 retracts from the wafer W.
[0051] In this process, the developer supplied from the developer supply nozzle 33 will be collected in the lower cup 102 through the outer peripheral surface of the inner cup 101 and the outer peripheral surface of the upper cup 103, or through the outer peripheral surface of the upper cup 103 and the lower inner peripheral surface of the outer cup 104.
[0052] When developer is supplied from the developer supply nozzle 33, the aforementioned integral movable body is positioned in the first position. That is, the upper end of the upper cup 103 is located below the surface of the wafer W on the rotating chuck 20. Therefore, when the developer is supplied, the developer supply nozzle 33 moves along the surface of the wafer W in a state close to the surface of the wafer W (for example, the distance from the nozzle of the developer supply nozzle 33 to the surface of the wafer W is less than 3 mm), without interference between it and the upper cup 103. Furthermore, the outer cup 104 is designed so that there is no interference between the developer supply nozzle 33 and the outer cup 104 during this movement.
[0053] Furthermore, since the damper 42 is adjusted to "exhaust the housing but not the cup" when the developer is supplied from the developer supply nozzle 33, the "airflow generated at the periphery of the wafer W when the developer is supplied" can be suppressed.
[0054] Furthermore, when the developer is supplied from the developer supply nozzle 33, as mentioned above, the suction section 200 performs suction. Therefore, the suction section 200 can recover "developer droplets M generated by the developer sprayed from the developer supply nozzle 33 impacting the wafer W, etc., which leak out of the cup body 100 above (specifically above the outer cup 104)".
[0055] (S2B: Static Development) In this procedure, at a predetermined time, the developer film formed in step S2A is maintained on the wafer W, and static development of the photoresist film on the wafer W is performed. Furthermore, in this procedure, the damper 42 is maintained in a state of "exhausting the casing but not the cup". Therefore, "airflow generated at the periphery of wafer W during static development" can be suppressed. Furthermore, the suction section 200 is maintained during this process. Therefore, during static development, the mist droplets M that leak out to the outside of the cup body 100 can be recovered by the suction section 200.
[0056] In this procedure, as shown in Figure 5(A), the aforementioned integrated movable body can also be configured in a position other than the first position. The position other than the first position is the position where the rib 132 of the upper cup 103 and the ring 105 are tightly fitted together; more specifically, it is the position where the rib 132 of the upper cup 103 and the ring 105 are tightly fitted around approximately the entire circumference. This prevents developer droplets from leaking from the lower cup 102 (where developer vapor is present, i.e., in the environment of the lower cup 102 forming a developer gas) between the lower cup 102 and the outer cup 104, thus preventing leakage outside the cup body 100.
[0057] (Step S3: Treatment with rinsing solution) Next, the wafer W held in the rotating chuck 20 is treated with rinsing fluid, i.e., cleaned.
[0058] Specifically, the aforementioned integrated movable body is moved to the second position by the lifting mechanism 300. As shown in Figure 5(B), the second position is the position where the bottom surface of the inner circumferential end of the annular plate wall 130 of the upper cup 103 is higher than the surface of the wafer W on the rotating chuck 20. As long as this condition is met, the second position can also be any other position where the rib 132 of the upper cup 103 and the ring 105 are in close contact. Also, stop the intake of the intake section 200, and at the same time, adjust the damper 42 to switch from exhaust from the housing to exhaust from the cup. Furthermore, due to the drive of the nozzle drive unit 37, the rinsing fluid supply nozzle 36 moves to above the center of the wafer W.
[0059] Then, rinsing fluid is supplied to the wafer W from the rinsing fluid supply nozzle 36 to clean the wafer W. For example, during this cleaning process, for a wafer W that is rotating at 100-500 rpm due to the drive of the chuck drive unit 21, rinsing fluid is supplied to the wafer W from the rinsing fluid supply nozzle 36 to replace the developer film on the wafer W. Afterwards, the supply of rinsing fluid is stopped, and then the rotational speed of the wafer W is increased by the drive of the chuck drive unit 21, causing the rinsing fluid to be shed off the wafer W and the wafer W to dry. During the drying process, the rinsing fluid supply nozzle 36 is retracted from the wafer W by the drive of the nozzle drive unit 37.
[0060] During the cleaning process, the aforementioned integrated movable body is positioned in the second position. That is, the bottom surface of the inner circumferential end of the annular plate wall 130 of the upper cup 103 is located above the surface of the wafer W on the rotating chuck 20. Therefore, during the cleaning process, the developing solution and rinsing solution that are thrown off the wafer W from the rotating chuck 20 can be caught by the annular plate wall 130 of the upper cup 103 and recovered by the cup body 100.
[0061] Furthermore, during the cleaning process, since an outer cup 104 is provided, when the rinsing fluid supplied to the wafer W from the rinsing fluid supply nozzle is bounced back on the wafer W and then splashed out to the outside of the upper cup 103 through the opening 130a, the rinsing fluid can be recovered by the outer cup 104.
[0062] Furthermore, by venting the cup during the cleaning process, the venting flow path R1 formed within the cup body 100 with the aforementioned gap G1 can attract and recover droplets of rinsing solution and developer. In addition, droplets of rinsing solution and developer during cleaning may be generated by "rinsing solution supplied from the rinsing solution supply nozzle 36 impacting the wafer W" or "rinsing solution or developer thrown off the wafer W impacting the annular plate wall 130 of the upper cup 103".
[0063] (Step S4: Wafer removal) Next, the wafer W is removed from the developing apparatus 1 in the reverse order of step S1. This concludes the series of developing processes.
[0064] In the above example, during the supply of developer in step S2A and in both step S2B, venting is performed on the housing instead of the cup, and suction is achieved by the suction section 200 configured to surround the outer periphery of the cup body 100. Alternatively, during the supply of developer in step S2A and in either step S2B, venting is performed on the housing instead of the cup, and suction is achieved by the suction section 200 configured to surround the outer periphery of the cup body 100.
[0065] As described above, in this embodiment, cup venting is not performed during the developer application in step S2, but only during the rinsing process in step S3. Specifically, cup venting is not performed during at least one of the developer supply in step S2A and the static development in step S2B, but only during the rinsing process in step S3. That is, during at least one of the developer supply in step S2A and the static development in step S2B, the venting volume inside the cup 100 is lower than that during the rinsing process. Therefore, during at least one of the developer supply in step S2A and the static development in step S2B, airflow near the outer periphery of the wafer can be suppressed, and localized cooling of the outer periphery of the wafer W can be prevented. Thus, the uniformity of the development process, such as when using a photoresist with high temperature sensitivity during development, can be improved. Furthermore, in this embodiment, during either the supply of developer in step S2A or the static development in step S2B, air is drawn in by the "air suction section 200 configured to surround the outer periphery of the cup body 100". As a result of the lower exhaust volume from the cup body 100, even if developer droplets leak out to the outside of the cup body 100, the leaked droplets can be recovered by the air suction section 200. Thus, according to this embodiment, the in-plane uniformity of the developing process can be improved, and the developer droplets can be appropriately recovered.
[0066] Furthermore, in this embodiment, the height of the suction port 201 of the suction section 200 is below the height of the upper end of the cup body 100. Specifically, in at least one of the steps S2A (supplying developer) and S2B (static development), the height of the suction port 201 during suction is below the height of the upper end of the outer cup 104. Therefore, the following effects (1) and (2) are achieved. (1) It can suppress the situation where developer droplets that leak from the upper side of the cup body 100 to the outer side of the cup body 100 are not collected in the air inlet 201 due to gravity, but instead disperse through the lower side of the air inlet 200. (2) When using developer, it can suppress the situation where the airflow formed above the wafer W due to FFU400 is scattered due to the suction of the suction section 200.
[0067] Furthermore, in this embodiment, the portion constituting the upper part of the cup body 100, namely the outer cup 104, is height-adjustable, and the suction section 200 can be height-adjusted together with the outer cup 104. Therefore, regardless of the height of the outer cup 104, the height of the suction section 200 (specifically, the height of the suction port 201) relative to the upper part of the outer cup 104 can be kept constant. As a result, the recovery performance of the developer droplets can be stabilized.
[0068] (Second Implementation) Figures 6 and 7 are diagrams illustrating an example of the structure of the developing apparatus of the second embodiment, showing only the main parts. Figure 6 also shows an example of the connection between the lifting mechanism 300 and the exhaust mechanism 500 (described later), and Figure 7 shows an example of the exhaust path of the exhaust mechanism 500.
[0069] The developing apparatus of this embodiment, like the developing apparatus of the first embodiment, has an air intake 200. However, in this embodiment, as shown in FIG6, the exhaust mechanism 500 connected to the air intake 200 can exhaust air by a driving force that drives the lifting body (specifically the outer cup 104 and the upper cup 103) of the cup body 100 to rise or fall. The exhaust mechanism 500 can also exhaust air by either a driving force that drives the lifting body of the cup body 100 to rise or a driving force that drives the lifting body of the cup body 100 to fall. However, in this embodiment, the exhaust mechanism 500 can exhaust air by either a driving force that drives the lifting body of the cup body 100 to rise or a driving force that drives the lifting body of the cup body 100 to fall. The specific structure of the exhaust mechanism 500 will be described later.
[0070] The exhaust mechanism 500 has a top plate 501, a partition plate 502, and a bottom plate 503 in sequence from the top side. The top plate 501 and the partition plate 502 are connected by a "first telescopic pipe 504, which is flexible in the vertical direction and can extend and retract freely". The first pump chamber P1 is divided by the top plate 501, the partition plate 502 and the first telescopic pipe 504.
[0071] Furthermore, the partition 502 and the base plate 503 are connected by a "second telescopic pipe 505, which is flexible in the vertical direction." The second pump chamber P2 is divided by the partition 502, the base plate 503, and the second telescopic pipe 505.
[0072] The top plate 501 and bottom plate 503 are fixed. In contrast, the partition 502 is supported by a support member 301 that supports the intake section 200, etc. Driven by the drive unit 302, the support member 301 rises and falls, thus causing the partition 502 to rise and fall as well. Due to the rise and fall of the partition 502, the volumes of the first pump chamber P1 and the second pump chamber P2 change. If the partition 502 rises, the volume of the first pump chamber P1 decreases, and the volume of the second pump chamber P2 increases. Conversely, if the partition 502 falls, the volume of the first pump chamber P1 increases, and the volume of the second pump chamber P2 decreases.
[0073] Furthermore, as shown in Figure 7, the exhaust mechanism 500 has an upstream main exhaust pipe 510, a first upstream branch pipe 511 and a second upstream branch pipe 512, a downstream main exhaust pipe 520, a first downstream branch pipe 521 and a second downstream branch pipe 522.
[0074] The upstream end of the upstream main exhaust pipe 510 is connected to the intake section 200, specifically, it is connected to the hollow portion inside the annular body 202 of the intake section 200. The downstream side of the upstream main exhaust pipe 510 branches into a first upstream branch pipe 511 and a second upstream branch pipe 512, which are respectively connected to the first pump chamber P1 and the second pump chamber P2.
[0075] The upstream ends of the first downstream branch pipe 521 and the second downstream branch pipe 522 are respectively connected to the first pump chamber P1 and the second pump chamber P2. The downstream ends of the first downstream branch pipe 521 and the second downstream branch pipe 522 merge and are connected to the upstream end of the downstream main exhaust pipe 520.
[0076] Check valves V1 and V2 are provided for the first pump chamber P1, and check valves V3 and V4 are provided for the second pump chamber P2. Check valve V1 is used to prevent gas from flowing back from the first pump chamber P1 to the intake section 200, and check valve V2 is used to prevent gas from flowing back from the first downstream branch pipe 521 to the first pump chamber P1. Furthermore, check valve V3 is used to prevent gas from flowing back from the second pump chamber P2 to the intake section 200, and check valve V4 is used to prevent gas from flowing back from the second downstream branch pipe 522 to the second pump chamber P2.
[0077] The check valve V1 is located at the downstream end of the first upstream branch pipe 511, for example, within the first pump chamber P1. It is opened by the pressure caused by the inflow of gas into the first pump chamber P1 via the first upstream branch pipe 511. On the other hand, it is closed by the force of gravity acting on the valve body V11.
[0078] Check valve V2 is located upstream of, for example, the first downstream branch pipe 521 outside the first pump chamber P1, and is opened by the pressure caused by the gas discharged from the first pump chamber P1 via the first downstream branch pipe 521. On the other hand, it is closed by the gravity acting on the valve body V12.
[0079] The check valve V3 is located at the downstream end of the second upstream branch pipe 512, for example, within the second pump chamber P2. It is opened by the pressure caused by the inflow of gas into the second pump chamber P2 via the second upstream branch pipe 512. On the other hand, it is closed by the force of gravity acting on the valve body V13.
[0080] The check valve V4 is located upstream of the second downstream branch pipe 522, for example, outside the second pump chamber P2, and is opened by the pressure caused by the gas discharged from the second pump chamber P2 via the second downstream branch pipe 522. On the other hand, it is closed by the gravity acting on the valve body V14.
[0081] The exhaust mechanism 500, composed of the above-mentioned parts, is driven by the drive unit 302 to "rise as an integral moving body including the outer cup 104 and the intake unit 200". When the support member 301 rises, the partition 502 also rises. When the partition 502 rises, the volume of the first pump chamber P1 decreases, and the gas in the first pump chamber P1 is discharged through the first downstream branch pipe 521 and the downstream main exhaust pipe 520. At the same time, the volume of the second pump chamber P2 increases, and exhaust gas is discharged around the intake port 201 of the intake unit 200. The surrounding gas flows into the second pump chamber P2 through the intake unit 200, the upstream main exhaust pipe 510, and the second upstream branch pipe 512.
[0082] On the other hand, when the exhaust mechanism 500 is driven by the drive unit 302 to "descend the aforementioned integrated moving body", and the support member 301 descends, the partition 502 will also descend. When the partition 502 descends, the volume of the second pump chamber P2 decreases, and the gas in the second pump chamber P2 is discharged through the second downstream branch pipe 522 and the downstream main exhaust pipe 520. At the same time, the volume of the first pump chamber P1 increases, and exhaust gas is discharged around the intake port 201 of the intake unit 200. The surrounding gas flows into the first pump chamber P1 through the intake unit 200, the upstream main exhaust pipe 510, and the first upstream branch pipe 511.
[0083] Thus, by making the "exhaust mechanism 500 exhaust not with either the driving force that drives the above-mentioned upward movement or the driving force that drives the above-mentioned downward movement, but with both driving forces", the intake section 200 can perform intake both when the above-mentioned integral moving body is rising and falling.
[0084] When using the exhaust mechanism 500, during the processing of developing solution in step S2, the support member 301 rises and falls; specifically, the support member 301 rises and falls repeatedly. More specifically, during static development in step S2B, the support member 301 rises and falls repeatedly, and with this repeated rising and falling, the exhaust is continuously performed on the hollow portion of the annular body 202 of the suction section 200 operated by the exhaust mechanism 500, and the suction section 200 is continuously suctioned. Furthermore, during the static development in step S2A, the support member 301 can also be repeatedly raised and lowered. With this repeated raising and lowering, the air is continuously vented from the hollow portion of the annular body 202 of the suction section 200 operated by the exhaust mechanism 500, and the suction section 200 is continuously suctioned. At this time, the rising time of the aforementioned integrated moving body and the maximum height during the repeated raising and lowering of the aforementioned integrated moving body are adjusted to avoid interference between the developer supply nozzle 33 and the cup body 100.
[0085] As in this embodiment, by using the exhaust mechanism 500 for intake in the intake section 200, the number of drive sections can be prevented from increasing, thus suppressing high costs.
[0086] (Third Implementation) Figure 8 is a diagram showing an example of the structure of the developing apparatus of the third embodiment, showing only the main parts.
[0087] Due to the contact between the damper 42 and the inner circumferential surface of the main exhaust pipe 41, particles are generated, and the main exhaust pipe 41 is sometimes not sealed by the damper 42. At this time, even if the damper 42 is adjusted to allow exhaust from the housing, the exhaust volume of the exhaust with the aforementioned gap G1 as the exhaust flow path R1 is small, but still present.
[0088] Therefore, in this embodiment, as shown in FIG8, the exhaust flow path within the cup body 100 has an expansion and contraction ring 600 as a switching member for switching the exhaust flow path. The expansion and contraction ring 600 is formed into a ring shape when viewed from above, and is configured to expand and contract freely. For example, it expands by supplying air to the hollow portion inside the expansion and contraction ring 600, and contracts by venting air from the hollow portion inside the expansion and contraction ring 600.
[0089] Incidentally, when the upper cup 103 and the outer cup 104 are in the lowered state, the gaps G2 and G3 below can also form an exhaust flow path for venting gas inside the cup body 100 (specifically, for venting gas around the wafer W). That is, the gap G2 between the lower outer peripheral surface of the guide wall 110 of the upper cup 103 and the lower inner peripheral surface of the outer cup 104, and the gap G3 between the outer peripheral surface of the vertical wall 131 of the upper cup 103 and the inner peripheral surface of the vertical wall 121 of the lower cup 102 can form an exhaust flow path R2.
[0090] The downstream sides of exhaust flow path R1 and exhaust flow path R2 converge and are connected to exhaust pipe 127 via exhaust port 126. Furthermore, the upstream end of exhaust flow path R1 is located further inward than the upstream end of exhaust flow path R2, i.e., on the side of rotating chuck 20. Therefore, the exhaust through exhaust flow path R1 has a greater impact on the airflow around the periphery of wafer W, while the exhaust through exhaust flow path R2 has a smaller impact. Therefore, in this embodiment, the expansion ring 600 is only provided in exhaust flow path R1 and not in exhaust flow path R2.
[0091] In this embodiment, when the rinsing fluid is used for processing, i.e., when the damper 42 is adjusted to allow cup exhaust, the integral moving body including the upper cup 103 and the outer cup 104 is in an upward state, forming only the exhaust flow path R1 and not the exhaust flow path R2. Furthermore, at this time, the expansion ring 600 is in a contracted state, and the exhaust flow path R1 is open. This allows the developer and rinsing fluid droplets generated during the rinsing fluid processing to be recovered via the exhaust flow path R1.
[0092] On the other hand, during developer processing, when the damper 42 is adjusted to exhaust the housing, the integral moving body including the upper cup 103 and the outer cup 104 is in a descending state, forming both exhaust flow path R1 and exhaust flow path R2. However, the expansion ring 600 is in an expanded state, and exhaust flow path R1 is in a closed state. In this way, during developer processing, the "exhaust that cannot be avoided by the damper 42 structure through exhaust flow path R1" can be suppressed, and strong airflow at the periphery of the wafer W can be suppressed. Furthermore, since the "exhaust that cannot be avoided by the damper 42 structure through exhaust flow path R2" is also "exhausted that cannot be avoided by the damper 42 structure", developer droplets can be recovered not only by the intake of the intake section 200 but also by the exhaust through exhaust flow path R2.
[0093] Furthermore, the expansion ring 600 can also be fixed to either the inner cup 101 or the upper cup 103. When the expansion ring 600 is fixed to the upper cup 103, the fixed position is, for example, the following position. That is, when the upper cup 103 is in the descending state, the expansion ring 600 expands and closes the exhaust flow path R1. When the upper cup 103 is in the ascending state, even if the expansion ring 600 expands, as shown by the dashed line in Figure 9, it cannot close the exhaust flow path R1.
[0094] At this time, when the rinsing fluid is used, as the upper cup 103 rises, the expansion and contraction ring 600 is in a contracted state, as shown by the solid line in Figure 9. This prevents the cross-sectional area of the exhaust flow path R1 from decreasing due to the expansion and contraction ring 600 during the rinsing fluid treatment.
[0095] The expansion ring 600 can also be integrally formed with either the inner cup 101 or the upper cup 103.
[0096] The embodiments disclosed herein should be considered as examples of all points, not as limitations. The aforementioned embodiments may also be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended patent application.
[0097] 1: Developing equipment 10: Shell 11: Exhaust port 12: Exhaust pipe 20: Rotating suction cup 21: Suction Cup Drive Unit 22: Axis 23: Lifting pin 24: Sales Drive Department 25: Circular plate 25a: Hole 25b: Hole 30A: Track 30B: Track 31: Arm 32: Arm 33: Developer supply nozzle 34: Nozzle drive unit 35: Standby section 36: Fluid supply nozzle 37: Nozzle drive unit 38: Standby section 40: Exhaust mechanism 41: Main exhaust pipe 42: Air damper 100: Cup body 100a: Opening 101: Inner Cup 102:Drink 103: Upstairs 104:Outer cup 105: Ring Section 110: Guide Wall 111: Vertical wall 120: Bottom wall 121: Vertical Wall 122: Vertical wall 123: Vertical wall 124: Drain port 125:Drain pipe 126:Drain port 127: Exhaust pipe 130: Annular plate wall 130a: Opening 131: Vertical wall 132: Ribs 140: Annular wall 140a: Opening 141: Peripheral part 142: Turnaround Section 143: Vertical Wall 200: Inhalation section 201: Intake port 202: Circular body 300: Lifting mechanism 301: Supporting components 302: Drive Unit 400: Fan Filter Unit (FFU) 500: Exhaust Mechanism 501: Top Plate 502: partition 503: Base Plate 504: First expansion joint 505: Second expansion joint 510: Upstream side main exhaust pipe 511: First upstream branch pipe 512: Second upstream branch pipe 520: Downstream main exhaust pipe 521: First downstream branch pipe 522: Second downstream branch pipe 600: Expansion / Contraction Ring G1: Gap G2: Gap G3: Gap M: Fog Droplets P1: Pump Room 1 P2: Pump Room 2 R1: Exhaust path R2: Exhaust path U: Control Department V1: Check valve V2: Check valve V3: Check valve V4: Check valve V11: Valve body V12: Valve body V13: Valve body V14: Valve body W: Wafer X: Direction Y: direction
Claims
1. A developing apparatus for developing a photoresist film on a substrate, comprising: a substrate holding portion for holding the substrate; a rotating mechanism for rotating the substrate holding portion; a developing solution supply portion for supplying developing solution to the substrate held in the substrate holding portion; a rinsing solution supply portion for supplying rinsing solution to the substrate held in the substrate holding portion; a liquid receiving portion for receiving developing solution and rinsing solution from the substrate held in the substrate holding portion; an exhaust pipe connected to the liquid receiving portion for venting air from the interior of the liquid receiving portion; and an air suction portion disposed around the outer periphery of the liquid receiving portion; wherein, during at least either when the developing solution is supplied at a lower exhaust volume than that used in processing with rinsing solution to vent air from the interior of the liquid receiving portion, or during static development, the air suction portion draws in air and recovers droplets of the developing solution that have leaked to the outside of the liquid receiving portion.
2. The developing apparatus as described in claim 1, wherein, The suction part has a suction port, and the height of the suction port during suction is below the height of the upper end of the liquid receiving part.
3. The developing apparatus as described in claim 1, wherein, The liquid receiving part has a lifting body that can be raised and lowered.
4. The developing apparatus as described in claim 3, wherein, The lifting body of the liquid receiving part forms the upper end of the liquid receiving part, and the air intake part can rise and fall together with the lifting body.
5. The developing apparatus of claim 3 or 4 further comprises: an exhaust mechanism that can exhaust air by means of the driving force that drives the lifting body to move up and down; the suction unit is connected to the exhaust mechanism.
6. The developing apparatus as described in claim 5, wherein, The exhaust mechanism can exhaust air by means of the driving force that drives the lifting body to rise, and can also exhaust air by means of the driving force that drives the lifting body to fall.
7. The developing apparatus as described in claim 5, wherein, During at least one of the following processes—when the developer is supplied or when the development is stationary—the lifting body is repeatedly raised and lowered, thereby venting the exhaust mechanism and drawing in the suction unit in conjunction with the repeated raising and lowering.
8. The developing apparatus as described in any of claims 1 to 4, wherein, The liquid receiving part has an exhaust flow path connected to the exhaust pipe and a switching component for switching the exhaust flow path.
9. The developing apparatus as described in claim 8, wherein, The exhaust flow path has a first exhaust flow path and a second exhaust flow path that converge and connect to the exhaust pipe on the downstream side. The upstream end of the first exhaust flow path is located on the side of the substrate holding portion that is closer to the upstream end of the second exhaust flow path. The switching member is provided in the first exhaust flow path.
10. The developing apparatus as claimed in claim 9, wherein, The liquid receiving part has a liftable lifting body. The first exhaust flow path and the second exhaust flow path are divided by the lifting body. The switching member can expand and contract freely and is fixed to the lifting body. The fixed position of the switching member in the lifting body is when the lifting body is in a descending state. When the switching member expands, it closes the first exhaust flow path. When the lifting body is in a rising state, even if the switching member expands, it will not close the position of the first exhaust flow path. When using the flushing fluid, the lifting body is in a rising state and the switching member is in a contracted state.
11. A developing process for developing a photoresist film on a substrate, comprising the following steps: holding the substrate in a substrate holding portion; supplying a developing solution to the substrate held in the substrate holding portion; performing static development on the substrate held in the substrate holding portion; processing the substrate held in the substrate holding portion using a rinsing solution; in at least one of the steps of supplying the developing solution or the static development step, the exhaust volume in the liquid receiving portion is lower than that in the step of processing with the rinsing solution, so that an air intake portion surrounding the outer periphery of the liquid receiving portion is configured to absorb air and recover droplets of the developing solution leaking from the opening of the liquid receiving portion.
12. The developing process method as described in claim 11, wherein, The suction system of the suction unit uses an exhaust mechanism that exhausts air by means of the driving force that drives the lifting body of the liquid receiving unit to move up and down.
13. The developing process method as described in request item 11 or 12, wherein, In at least one of the processes of supplying the developer or the static development process, the venting flow path of the liquid receiving part is closed by a switching member that switches the venting flow path.
Citation Information
Patent Citations
Development method and developing equipment
JP2003324064A
Liquid treatment apparatus and liquid treatment method
JP2018026477A
Development apparatus
JP2021086994A
Liquid processing apparatus
TW201517118A