Photosensitive resin composition, method for manufacturing electronic device, electronic device and optical device

Abstract

A photosensitive resin composition, an electronic device having an insulating layer made of the photosensitive resin composition, and an optical device having an insulating layer made of the photosensitive resin composition, the photosensitive resin composition comprising: a polyimide resin (A); a polyfunctional (meth)acrylate compound (B); a photosensitizer (C); and a polymerization inhibitor (D), the polyimide resin (A) having a structure represented by the following general formula (a), In general formula (a), X is a divalent organogroup and Y is a tetravalent organogroup.

Description

Technical Field

[0001] This invention relates to a photosensitive resin composition, a method for manufacturing an electronic device, and an electronic and optical device. Prior Technology

[0002] In the electrical / electronic fields, photosensitive resin compositions containing polyamide resins and / or polyimide resins are sometimes used to form hardened films such as insulating layers. Therefore, photosensitive resin compositions containing polyamide resins and / or polyimide resins have been studied to date.

[0003] As an example, Patent Document 1 describes a photosensitive composition comprising: at least one fully amide-modified polyamide polymer having a weight-average molecular weight in the range of about 20,000 Daltons to about 70,000 Daltons; at least one solubility switching compound; at least one photoinitiator; and at least one solvent, which, when cyclopentanone is used as a developer, is capable of forming a film exhibiting a dissolution rate exceeding about 0.15 μm / s.

[0004] Patent documents 2 and 3 also describe a photosensitive resin composition containing polyamide resin and / or polyimide resin. [Previous Technical Documents] [Patent Literature]

[0005] [Patent Document 1] International Publication No. 2016 / 172092 [Patent Document 2] International Publication No. 2007 / 047384 [Patent Document 3] Japanese Patent Application Publication No. 2018-070829 Summary of the Invention

[0006] [The problem that the invention aims to solve]

[0007] When using photosensitive resin compositions to form hardened films in electronic devices, a heat-curing process is typically performed. Specifically, first, a photosensitive resin composition is coated onto a substrate to form a film, and the film is patterned using exposure or development. Subsequently, the patterned film is heat-treated to form a hardened film. According to the inventors' research, there is still room for improvement in the elongation of the hardened film and the focus margin in the exposure / development steps as described above.

[0008] The present invention was made in view of this situation. One of the objects of the present invention is to provide a photosensitive resin composition having suitable elongation and a large focal margin. [Technical means to solve the problem]

[0009] The inventor has completed the following invention, thereby solving the above-mentioned problems.

[0010] According to the present invention, a photosensitive resin composition is provided, comprising: Polyimide resin (A); Multifunctional (meth)acrylate compound (B); Photosensitive agent (C); and Polymerization inhibitor (D), The polyimide resin (A) contains a structure represented by the following general formula (a). In general formula (a), X is a divalent organogroup and Y is a tetravalent organogroup.

[0011] Furthermore, according to the present invention, a method for manufacturing an electronic device is provided, comprising: The film forming step involves forming a photosensitive resin film on a substrate using the aforementioned photosensitive resin composition; The exposure step involves exposing the photosensitive resin film to light; and The developing step involves developing the exposed photosensitive resin film.

[0012] Furthermore, according to the present invention, an electronic device is provided which includes a hardened film of the above-described photosensitive resin composition.

[0013] Furthermore, according to the present invention, an optical device is provided, comprising: Light-emitting elements; Wiring, which is electrically connected to the light-emitting element; and An insulating film that covers the wiring, and The insulating film is a hardened film of the aforementioned photosensitive resin composition. [Effects of the Invention]

[0014] According to the present invention, a photosensitive resin composition having suitable elongation and large focal margin is provided. Simple Explanation of the Diagram

[0015] [Figure 1] is a longitudinal cross-sectional view showing an example of the configuration of the electronic device of this embodiment. [Figure 2] is a partial enlarged view of the area enclosed by the dashed line in Figure 1. [Figure 3] is a step diagram illustrating the method of manufacturing the electronic device shown in Figure 1. [Figure 4] is a diagram illustrating the method of manufacturing the electronic device shown in Figure 1. [Figure 5] is a diagram illustrating the method of manufacturing the electronic device shown in Figure 1. [Figure 6] is a diagram illustrating the method of manufacturing the electronic device shown in Figure 1. [Figure 7] is a diagram illustrating the method of manufacturing the optical device of this embodiment. Implementation

[0016] The embodiments of the present invention will now be described in detail with reference to the accompanying drawings. In all diagrams, the same symbols are used to label the same constituent elements, and descriptions are omitted as appropriate. To avoid complicating things, (i) when there are multiple identical constituent elements in the same diagram, sometimes only one of them is labeled and not all of them are labeled, or (ii) especially in diagrams after Figure 2, sometimes the same constituent elements as in Figure 1 are not relabeled. All diagrams are for illustrative purposes only. The shapes or dimensions of the components in the diagrams may not correspond to actual objects.

[0017] Unless otherwise specified, the term "approximately" in this manual means a range that includes manufacturing tolerances or assembly deviations. Unless otherwise specified, the expression "X~Y" in the description of numerical ranges in this specification means X or more and Y or less. For example, "1~5% by mass" means "1% or more and 5% or less by mass".

[0018] In the description of "base" (atomic group) in this specification, the expression "unsubstituted" or "unsubstituted" includes both those without substituents and those with substituents. For example, "alkyl" includes not only alkyl groups without substituents (unsubstituted alkyl groups) but also alkyl groups with substituents (substituted alkyl groups). The term "(meth)acrylic acid" in this specification includes both acrylic acid and methacrylic acid. Similar expressions regarding "(meth)acrylates," etc., are also used. Unless otherwise specified, the term "organic group" in this specification refers to a group of atoms obtained by removing one or more hydrogen atoms from an organic compound. For example, "monovalent organic group" refers to a group of atoms obtained by removing one hydrogen atom from any organic compound. The term "electronic device" as used in this manual refers to components, devices, and end products that utilize electronic engineering technology, including semiconductor wafers, semiconductor elements, printed wiring boards, circuit display devices, information communication terminals, light-emitting diodes, physical batteries, and chemical batteries.

[0019] <Photosensitive Resin Composition> The photosensitive resin composition of this embodiment contains: a polyimide resin (A); a polyfunctional (meth)acrylate compound (B); a photosensitizer (C); and a polymerization inhibitor (D). In this embodiment, the polyimide resin (A) is a closed-ring polyimide resin containing a closed-ring polyimide structure represented by the following general formula (a).

[0020]

[0021] In general formula (a), X is a divalent organogroup and Y is a tetravalent organogroup.

[0022] Most conventional polyamide / polyimide-based photosensitive resin compositions contain polyamide before use (before forming a hardened film) but not polyimide. That is, conventionally, photosensitive resin compositions containing polyamide are mostly used to form films on substrates, and typically, the film is heated to cause the polyamide to close its ring and form polyimide. However, at this time, the membrane may shrink due to the closed-loop reaction or the dehydration that accompanies the closed-loop reaction, and it is sometimes difficult to obtain a hardened membrane with good flatness.

[0023] On the other hand, the photosensitive resin composition of this embodiment already contains polyimide resin (A) before use (before forming the hardened film). Furthermore, in this embodiment, the curing mechanism employs the polymerization reaction of a polyfunctional (meth)acrylate compound (B) (this polymerization reaction is, in principle, not accompanied by dehydration). Due to these factors, by using the photosensitive resin composition of this embodiment to form a hardened film, a hardened film with minimal shrinkage due to heating and good flatness can be formed. In particular, even on a substrate with a stepped surface, a hardened film with good flatness can be formed.

[0024] Furthermore, by using the photosensitive resin composition of this embodiment, it is easy to form a hardened film with good heat resistance and good mechanical properties (e.g., elongation at break). Cured films in electronic devices typically require high heat resistance or good mechanical properties. However, in the past, if resins were designed to be rigid to improve heat resistance, the resins would sometimes lose their flexibility, resulting in a decrease in mechanical properties such as elongation. Although the details are not yet clear, it is believed that in the photosensitive resin composition of this embodiment, the complex entanglement of the polyfunctional (meth)acrylate compound (B) with the polyimide resin (A) during curing (polymerization) results in a cured film different from conventional cured films. This "entanglement structure of polyimide resin and polyfunctional (meth)acrylate" is believed to be related to good heat resistance and good mechanical properties.

[0025] When using a multifunctional (meth)acrylate compound (B), the elongation of the resulting photosensitive resin composition becomes good as described above. However, on the other hand, swelling of the hardened portion, poor dissolution due to uneven dissolution of the unexposed portion (bridge), and incomplete dissolution and residue of the unexposed portion (foot) may occur. Due to these defects, sufficient focus margin may not be obtained. Here, the inventors have discovered through research that by using a photosensitizer (C) and a polymerization inhibitor (D), both good elongation and good focus margin can be achieved. In this embodiment, the photosensitive resin composition improves the curing properties of the exposed portion by using the photosensitizer (C), thereby suppressing bridging during the development step while maintaining good mechanical properties. Furthermore, in this embodiment, the photosensitive resin composition improves the solubility of the unexposed portion by using the polymerization inhibitor (D), thereby suppressing foot formation during the development step while maintaining good mechanical properties. By highly suppressing these bridging or foot formations, the focus margin of the photosensitive resin composition can be significantly increased. In other words, by using both the photosensitizer (C) and the polymerization inhibitor (D) simultaneously and by carefully controlling their ratio, it is possible to achieve both good elongation and good focal margin in the hardened film of the photosensitive resin composition of this embodiment.

[0026] As described above, the photosensitive resin composition of this embodiment is preferably used to form an insulating layer in an electronic or optical device.

[0027] The components that the photosensitive resin composition of this embodiment may contain, as well as the properties and physical characteristics of the photosensitive resin composition of this embodiment, will be further described.

[0028] (Polyimide resin (A)) The photosensitive resin composition of this embodiment contains a polyimide resin (A), which contains structural units represented by general formula (a).

[0029]

[0030] In general formula (a), X is a divalent organogroup and Y is a tetravalent organogroup.

[0031] As described above, the photosensitive resin composition of this embodiment tends to have less shrinkage caused by curing (heating) by using a polyimide resin containing a closed-ring amide structure represented by general formula (a) before curing.

[0032] When the molar number of amide groups contained in the polyimide resin (A) is set as IM and the molar number of amide groups contained in the polyimide resin (A) is set as AM, the amide content, expressed as {IM / (IM+AM)}×100 (%), is preferably 90% or more, more preferably 95% or more, and even more preferably 98% or more. In short, polyimide resin (A) is preferably a resin that has little or no open-ring amide structure and a large amount of closed-ring amide structure. By using such polyimide, shrinkage caused by heating can be further suppressed, and a hardened film with better flatness can be formed. As one example, the amide imidization rate can be determined from the area of ​​the peak corresponding to the amide group or the area of ​​the peak corresponding to the amide group in the NMR spectrum. As another example, the amide imidization rate can be determined from the area of ​​the peak corresponding to the amide group or the area of ​​the peak corresponding to the amide group in the infrared absorption spectrum.

[0033] Polyimide resin (A) containing fluorine atoms is preferred. In the inventor's view, polyimide resins containing fluorine atoms tend to have better solubility in organic solvents compared to polyimide resins without fluorine atoms. Therefore, by using polyimide resins containing fluorine atoms, it is easier to set the photosensitive resin composition into a varnish-like state. The amount (mass ratio) of fluorine atoms in fluorine-containing polyimide resins is, for example, 1 to 30% by mass, preferably 3 to 28% by mass, and even more preferably 5 to 25% by mass. By containing a sufficient amount of fluorine atoms in the polyimide resin, sufficient organic solvent solubility is easily obtained. On the other hand, from the viewpoint of balancing with other properties, it is better if the amount of fluorine atoms is not excessive.

[0034] By designing the ends of the polyimide resin (A) in various ways, the mechanical properties (elongation at break, etc.) of the cured material can be further improved.

[0035] As an example, it is preferable that the polyimide resin (A) has a group at its end that can react with epoxy groups to form a bond. Examples of such groups include anhydride groups, hydroxyl groups, amine groups, and carboxyl groups.

[0036] Preferably, the polyimide resin (A) has an anhydride group at its end. In the photosensitive resin composition of this embodiment, the anhydride group and the epoxy group readily form bonds. The anhydride group is preferably a group with a cyclic anhydride skeleton. The "ring structure" here is preferably a 5-membered ring or a 6-membered ring, and more preferably a 5-membered ring.

[0037] Here, in the structural unit represented by general formula (a) that constitutes polyimide resin (A), X is a divalent organic group and Y is a tetravalent organic group.

[0038] It is preferable that the divalent organogroup of X and / or the tetravalent organogroup of Y contain an aromatic ring structure, and even more preferable that they contain a benzene ring structure. This tends to further improve heat resistance. The divalent organogroup of X and / or the tetravalent organogroup of Y are preferably structures having 2 to 6 benzene rings bonded by single bonds or divalent linkers. Examples of divalent linkers here include alkyl groups, fluorinated alkyl groups, and ether groups. alkyl groups and fluorinated alkyl groups can be linear or branched. The number of carbons in the divalent organogroup of X is, for example, 6 to 30. The number of carbons in the tetravalent organogroup of Y is, for example, 6 to 20. In general formula (a), it is preferable that the two amide rings are 5-membered rings.

[0039] Polyimide resin (A) containing fluorine atoms is preferred. This tends to improve its solubility in organic solvents. Furthermore, from the perspective of further improving the solubility of organic solvents, it is preferable that both X and Y are fluorine-containing groups.

[0040] It is further preferred that the polyimide resin (A) contains structural units represented by the following general formula (aa).

[0041]

[0042] In the general formula (aa), Y' represents a single bond or an alkyl group. The meaning of X is the same as that of X in general formula (a). The alkyl group of Y' can be linear or branched. It is preferable that some or all of the hydrogen atoms in the alkyl group of Y' are replaced by fluorine atoms. The number of carbon atoms in the alkyl group of Y' is, for example, 1 to 6, preferably 1 to 4, and even more preferably 1 to 3.

[0043] Polyimide resin (A) can typically be obtained by: (i) firstly, reacting a diamine with an acid dianhydride (condensation) to synthesize polyamide; (ii) subsequently, amide-imidizing the polyamide (performing a ring-closing reaction); and (iii) introducing desired functional groups at the polymer terminus as needed. For specific reaction conditions, please refer to the examples described later or the above-mentioned Patent Document 1, etc.

[0044] In the final polyimide resin (A), the diamine is incorporated into the polymer as a divalent organic group X in general formula (a). Furthermore, the acid dianhydride is incorporated into the polymer as a tetravalent organic group Y in general formula (a). In the synthesis of polyimide resin (A), one or more diamines can be used, and one or more acid dianhydrides can also be used.

[0045] Examples of diamines that can be used as raw materials include 3,4'-diaminodiphenyl ether (3,4'-ODA), 4,4'-diamino-2,2'-bis(trifluoromethyl)biphenyl (TFMB), 3,3',5,5'-tetramethylbenzidine, 2,3,5,6-tetramethyl-1,4-phenylenediamine, 3,3'-diaminodiphenyl ether, 3,3'-dimethylbenzidine, 3,3'-bis(trifluoromethyl)benzidine, and 2,2'-bis(p-aminophenyl)benzidine. Hexafluoropropane, bis(trifluoromethoxy)benzidine (TFMOB), 2,2'-bis(pentafluoroethoxy)benzidine (TFEOB), 2,2'-trifluoromethyl-4,4'-oxydiphenylamine (OBABTF), 2-phenyl-2-trifluoromethyl-bis(p-aminophenyl)methane, 2-phenyl-2-trifluoromethyl-bis(m-aminophenyl)methane, 2,2'-bis(2-heptafluoroisopropoxy-tetrafluoroethoxy)benzidine (DFPOB) 2,2-bis(m-aminophenyl)hexafluoropropane (6-FmDA), 2,2-bis(3-amino-4-methylphenyl)hexafluoropropane, 3,6-bis(trifluoromethyl)-1,4-diaminophenyl (2TFMPDA), 1-(3,5-diaminophenyl)-2,2-bis(trifluoromethyl)-3,3,4,4,5,5,5-heptafluoropentane, 3,5-diaminotrifluorotoluene (3,5-DABTF), 3,5-diamino-5 3,5-Diamino-5-(heptafluoropropyl)benzene, 2,2'-dimethylbenzidine (DMBZ), 2,2',6,6'-tetramethylbenzidine (TMBZ), 3,6-diamino-9,9-bis(trifluoromethyl)dibenzopiperan (6FCDAM), 3,6-diamino-9-trifluoromethyl-9-phenyldibenzopiperan (3FCDAM), 3,6-diamino-9,9-diphenyldibenzopiperan, etc.

[0046] Examples of acid dianhydrides that can be used as raw materials include, for example, pyrolithic dianhydride (PMDA), diphenyl ether-3,3',4,4'-tetracarboxylic dianhydride (ODPA), benzophenone-3,3',4,4'-tetracarboxylic dianhydride (BTDA), biphenyl-3,3',4,4'-tetracarboxylic dianhydride (BPDA), diphenyl sulfonate-3,3',4,4'-tetracarboxylic dianhydride (DSDA), diphenylmethyl-3,3',4,4'-tetracarboxylic dianhydride, 2,2-bis(3,4-phthalic anhydride)propane, and 2,2-bis(3,4-phthalic anhydride)-1,1,1,3,3,3-hexafluoropropane (6FDA). Of course, the acid dianhydrides that can be used are not limited to these. One or more acid dianhydrides can be used.

[0047] The ratio of diamine to dianhydride used in molar ratios is approximately 1:1. However, to obtain the desired end structure, one of them can be used in excess. Specifically, by using excessive amounts of diamine, the ends (both ends) of the polyimide resin (A) tend to become amino groups. On the other hand, by using excessive amounts of dianhydride, the ends (both ends) of the polyimide resin (A) tend to become anhydride groups. As described above, in this embodiment, it is preferable that the polyimide resin (A) has anhydride groups at its ends. Therefore, in this embodiment, it is preferable to use excessive amounts of dianhydride when synthesizing the polyimide resin (A).

[0048] Alternatively, a reagent can be reacted with the amine and / or anhydride groups at the ends of the polyimide obtained by condensation polymerization to give the polyimide the desired functional groups at the ends.

[0049] The weight-average molecular weight of the polyimide resin (A) is, for example, 5,000 to 100,000, preferably 7,000 to 75,000, and even more preferably 10,000 to 50,000. By ensuring the weight-average molecular weight of the polyimide resin (A) is sufficiently high, for example, sufficient heat resistance of the cured film can be obtained. Furthermore, by ensuring the weight-average molecular weight of the polyimide resin (A) is not too high, it is easily soluble in organic solvents. Weight-average molecular weight can usually be determined by gel permeation chromatography (GPC) using polystyrene as a standard.

[0050] (Polyfunctional (meth)acrylate compound (B)) The photosensitive resin composition of this embodiment contains a polyfunctional (meth)acrylate compound (B). Examples of polyfunctional (meth)acrylate compounds (B) that have two or more (meth)acrylate groups in one molecule are not particularly limited.

[0051] From the perspective of achieving the aforementioned "entangled structure of polyimide resin and polyfunctional (meth)acrylate" or obtaining a robust and chemically resistant cured film, it is preferable that the polyfunctional (meth)acrylate compound (B) has 3 or more functional groups. There is no upper limit to the functional group of the polyfunctional (meth)acrylate compound (B), but considering the availability of raw materials, the upper limit for the functional group is, for example, 11 functional groups. Generally speaking, when using polyfunctional (meth)acrylate compounds (B) with a high number of functional groups ((meth)acrylyl), the chemical resistance of the cured film tends to improve. On the other hand, when using polyfunctional (meth)acrylate compounds (B) with a low number of functional groups ((meth)acrylyl), the mechanical properties of the cured film, such as tensile elongation, tend to become better.

[0052] As an example, it is preferable that the polyfunctional (meth)acrylate compound (B) contains a 3-4 functional (meth)acrylate compound (B1).

[0053] As an example, it is preferable that the polyfunctional (meth)acrylate compound (B) contains more than 5 functional (meth)acrylate compounds (B2).

[0054] As an example, a polyfunctional (meth)acrylate compound (B) may contain a compound represented by the following general formula (b). In the following general formula, R' is a hydrogen atom or a methyl group, n is 0 to 3, and R is a hydrogen atom or a (meth)acrylic group.

[0055]

[0056] Specific examples of polyfunctional (meth)acrylate compounds (B) are as follows. Of course, polyfunctional (meth)acrylate compounds (B) are not limited to these.

[0057] Polyol polyacrylates such as ethylene glycol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, di(trimethylolpropane)tetra(meth)acrylate, neopentyl tert-methacrylate, neopentyl tert-methacrylate, dinepentyl tert-methacrylate, dinepentyl tert-methacrylate, dinepentyl tert-methacrylate, and dinepentyl tert-methacrylate; epoxy acrylates such as bisphenol A diglycidyl ether di(meth)acrylate and hexanediol diglycidyl ether di(meth)acrylate; and amine esters (meth)acrylates obtained by reacting polyisocyanates with hydroxyl-containing (meth)acrylates such as hydroxyethyl (meth)acrylate.

[0058] ARONIX M-400, ARONIX M-460, ARONIX M-402, ARONIX M-510, ARONIX M-520 (manufactured by TOAGOSEI CO., LTD.), KAYARAD T-1420, KAYARAD DPHA, KAYARAD DPCA20, KAYARAD DPCA30, KAYARAD DPCA60, KAYARAD DPCA120 (manufactured by Nippon Kayaku Co., Ltd.), Viscoat#230, Viscoat#300, Viscoat#802, Viscoat#2500, Viscoat#1000, Viscoat#1080 (manufactured by OSAKA ORGANIC CHEMICAL INDUSTRY LTD.), NK ESTETR A-BPE-10, NK ESTETR A-GLY-9E, NK ESTETR A-9550,NK ESTETR Commercially available products such as A-DPH (manufactured by SHIN-NAKAMURA CHEMICAL CO, LTD.).

[0059] The photosensitive resin composition may contain only one polyfunctional (meth)acrylate compound (B), or it may contain two or more polyfunctional (meth)acrylate compounds (B). In the latter case, it is preferable to use polyfunctional (meth)acrylate compounds (B) with different functional groups. It is believed that by using polyfunctional (meth)acrylate compounds (B) with different functional groups, a more complex "entangled structure of polyimide and polyfunctional (meth)acrylate" can be formed, thereby obtaining better heat resistance or mechanical properties. Incidentally, commercially available multifunctional (meth)acrylate compounds (B) also include mixtures of (meth)acrylates with different numbers of functional groups.

[0060] The amount of the polyfunctional (meth)acrylate compound (B) relative to 100 parts by weight of the polyimide resin (A) is, for example, 25 to 150 parts by weight, preferably 50 to 120 parts by weight, more preferably 70 to 100 parts by weight, and even more preferably 80 to 95 parts by weight. The amount of polyfunctional (meth)acrylate compound (B) used is not particularly limited, but by appropriately adjusting the amount used as described above, one or more of the various properties can be further improved. As described above, in the photosensitive resin composition of this embodiment, it is believed that a "circular structure of polyimide and polyfunctional (meth)acrylate entanglement" can be formed by curing, and it is believed that by appropriately adjusting the amount of polyfunctional (meth)acrylate compound (B) relative to polyimide resin (A), polyimide resin (A) and polyfunctional (meth)acrylate compound (B) will be sufficiently entangled, and additional components unrelated to entanglement will be reduced, resulting in further improved performance.

[0061] (Photosensitive agent (C)) The photosensitive resin composition of this embodiment contains a photosensitizer (C). The photosensitizer (C) is not particularly limited as long as it is a photosensitive active species that can harden the photosensitive resin composition.

[0062] It is preferable that the photosensitizer (C) contains a photoradical generator. The photoradical generator is particularly effective in polymerizing polyfunctional (meth)acrylate compounds (B).

[0063] There are no particular limitations on the photoradical generators that can be used; those that are known to the public can be used appropriately. Examples include: 2,2-diethoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 1-hydroxycyclohexylacetophenone, 2-hydroxy-2-methyl-1-phenylprop-1-one, 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-prop-1-one, 2-hydroxy-1-{4-[4-(2-hydroxy-2-methylpropoxy)benzyl]phenyl}-2-methylprop-1-one, 2-methyl-1-(4-methylthiophenyl)-2-oxolinylprop-1-one Alkyl benzophenones such as 2-benzyl-2-dimethylamino-1-(4-hydroxylphenyl)-butanone-1,2-(dimethylamino)-2-[(4-methylphenyl)methyl]-1-[4-(4-hydroxylphenyl)phenyl]-1-butanone; benzophenones such as benzoin, 4,4'-bis(dimethylamino)benzophenone, and 2-carboxybenzophenone; benzoin compounds such as benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, and benzoin isobutyl ether; 9-oxosulfuron 2-Ethyl-9-oxosulfur 2-Isopropyl-9-oxosulfur 2-Chloro-9-oxosulfur 2,4-Dimethyl-9-oxosulfur 2,4-Diethyl-9-oxosulfur 9-Oxysulfur The trihalomethane series of compounds, including 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-symmetric trihalomethanes, 2-(4-methoxynaphthyl)-4,6-bis(trichloromethyl)-symmetric trihalomethanes, 2-(4-ethoxynaphthyl)-4,6-bis(trichloromethyl)-symmetric trihalomethanes, and 2-(4-ethoxycarbonylnaphthyl)-4,6-bis(trichloromethyl)-symmetric trihalomethanes. ; Halomethylated acediazole compounds such as 2-trichloromethyl-5-(2'-benzofuranyl)-1,3,4-acediazole, 2-trichloromethyl-5-[β-(2'-benzofuranyl)vinyl]-1,3,4-acediazole, 4-acediazole, and 2-trichloromethyl-5-furanyl-1,3,4-acediazole; 2,2'-bis(2-chlorophenyl)-4,4',5,5'-tetracycline Biimidazole compounds such as phenyl-1,2'-biimidazole, 2,2'-bis(2,4-dichlorophenyl)-4,4',5,5'-tetraphenyl-1,2'-biimidazole, and 2,2'-bis(2,4,6-trichlorophenyl)-4,4',5,5'-tetraphenyl-1,2'-biimidazole; 1,2-octanedione, 1-[4-(phenylthio)phenyl]-2-(o-benzoyl) Oxime esters, such as oximes, ethyl ketones, 1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazole-3-yl]-,1-(o-acetylgoxime); cyclopentadiene titanium compounds, such as bis(n5-2,4-cyclopentadien-1-yl)-bis(2,6-difluoro-3-(1H-pyrrolo-1-yl)-phenyl)titanium; acylphosphine compounds, such as acylphosphine oxide; benzoic acid esters, such as p-dimethylaminobenzoic acid and p-diethylaminobenzoic acid; acridine compounds, such as 9-phenylacridine; etc. Among these, oxime esters are particularly preferred.

[0064] The photosensitive resin composition may contain one photosensitizer (C) or two or more photosensitizers (C). The content of photosensitizer (C) relative to 100 parts by weight of polyimide resin (A) is, for example, 5 parts by weight or more and 30 parts by weight or less, preferably 10 parts by weight or more and 25 parts by weight or less.

[0065] (Polymerization inhibitor (D)) The photosensitive resin composition of this embodiment contains a polymerization inhibitor (D). In this embodiment, examples of polymerization inhibitors (D) include hindered phenol compounds, hindered amine compounds, N-oxyl compounds, and thioether compounds. From the viewpoint of improving the solubility of the unexposed portion, it is preferable to contain one or more compounds selected from hindered phenol compounds, hindered amine compounds, and N-oxyl compounds.

[0066] Examples of hindered phenolic compounds include 1,3,5-tris(3,5-di-tert-butyl-4-hydroxybenzyl)-1,3,5-tris(2,4,6)-trione and 4,4',4”-(1-methylpropanyl-3-ylidene)tris(6-tert-butyl-m-cresol)(4,4',4”-(1-methylpropanyl-3-ylidene)tris(6-tert-but yl-m-cresol), 6,6'-di-tert-butyl-4,4'-butylene di-m-cresol, neopentyl tetroxide tetra[3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate] (Irganox1010), 3,9-bis{2-[3-(3-tert-butyl-4-hydroxy-5-methylphenyl)propoxy]-1,1-dimethylethyl}-2,4,8,10-tetraoxaspiro[5.5]undecane, 1,3, 5-Tris(3,5-di-tert-butyl-4-hydroxyphenylmethyl)-2,4,6-trimethylbenzene, 2,2'-thiodiethylbis[3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate] (Irganox 1035), N,N'-(1,6-hexanediyl)bis[3,5-bis(1,1-dimethylethyl)-4-hydroxyphenylpropionamide], bis[3-(3-tert-butyl-4-hydroxy-5-methylphenyl)propionic acid][ Ethylenebis(oxyethylene) , 1,6-hexanediol bis[3-(3,5-di-tertiary butyl-4-hydroxyphenyl)propionate], 2,6-di-tertiary butyl-4-cresol, 2,4-bis[(dodecylthio)methyl]-6-methylphenol (Irganox 1726), 2,4-bis(octylthiomethyl)-6-methylphenol (Irganox 1520L), etc. These can be used alone or in combination with two or more.

[0067] Examples of hindered amine compounds include tetra(1,2,2,6,6-pentamethyl-4-piperidinyl)but-1,2,3,4-tetracarboxylic acid ester, tetra(2,2,6,6-tetramethyl-4-piperidinyl)but-1,2,3,4-tetracarboxylic acid ester, 1,2,3,4-butanetetracarboxylic acid and 1,2,2,6,6-pentamethyl-4-piperidinol, and 3,9-bis(2-hydroxy-1,1-dimethylethyl)-2,4,8,10-tetraoxaspiro[5.5]undecane. Mixed esters of undecane, 1,2,3,4-butanetetracarboxylic acid and 2,2,6,6-tetramethyl-4-piperidinol and 3,9-bis(2-hydroxy-1,1-dimethylethyl)-2,4,8,10-tetraoxaspiro[5.5]undecane, bis(1,2,2,6,6-pentamethyl-4-piperidinyl) sebacate, bis(2,2,6,6-tetramethyl-4- Reactants include piperidinyl sebacate, bis(1-undecoxy-2,2,6,6-tetramethylpiperidin-4-yl) carbonate, 1,2,2,6,6-pentamethyl-4-piperidinyl methacrylate, 2,2,6,6-tetramethyl-4-piperidinyl methacrylate, 2,2,6,6-tetramethylpiperidin-4-yl hexadecanoate, and 2,2,6,6-tetramethylpiperidin-4-yl octadecanoate. These can be used alone or in combination with two or more.

[0068] Examples of N-oxy compounds include 4-benzoyloxy-2,2,6,6-tetramethylpiperidinoxy (4-benzoyloxyTEMPO), N-nitrosodiphenylamine, N-nitroso-N-phenylhydroxylamine, 2,2,6,6-tetramethylpiperidin-1-oxy (TEMPO), 4-hydroxy-2,2,6,6-tetramethylpiperidin-1-oxy free radical (4-hydroxyTEMPO), and sebacic acid bis(2,2,6,6-tetramethyl-4-piperidinyl-1-oxy) (sebacic acid bisTEMPO). These compounds can be used alone or in combination with two or more.

[0069] Furthermore, examples of thioether compounds include 2,2-bis{[3-(dodecylthio)-1-sideoxypropoxy]methyl}prop-1,3-diylbis[3-(dodecylthio)propionate], bis(tridecyl)-3,3'-thiodipropionate, etc. These can be used alone or in combination with two or more.

[0070] In the photosensitive resin composition of this embodiment, the content of the polymerization inhibitor (D) is preferably 0.1 parts by mass and 5 parts by mass or less, and more preferably 1 part by mass and 3 parts by mass or less, relative to 100 parts by mass of polyimide resin (A). If the content of the polymerization inhibitor (D) is within the above range, the solubility of the unexposed portion is improved, thereby suppressing the phenomenon of incomplete dissolution and residue of the unexposed portion during the development step (foot) while maintaining good mechanical properties.

[0071] Furthermore, in the photosensitive resin composition of this embodiment, the content of the polymerization inhibitor (D) is preferably 1 part by mass and 30 parts by mass or less relative to 100 parts by mass of the photosensitive agent (C), and more preferably 5 parts by mass and 20 parts by mass or less. If the content of the polymerization inhibitor (D) is within the above range relative to 100 parts by mass of the photosensitive agent (C), good elongation and good focal margin can be achieved in the cured film of the photosensitive resin composition of this embodiment.

[0072] (Thermal free radical generator (E)) The photosensitive resin composition of this embodiment preferably contains a thermal free radical generator (E). By using the thermal free radical generator (E), for example, the heat resistance and / or chemical resistance (resistance to organic solvents, etc.) of the cured film can be further improved. This is believed to be because the use of the thermal free radical generator (E) can further promote the polymerization reaction of the polyfunctional (meth)acrylate compound (B).

[0073] The thermal free radical generator (E) preferably contains an organic peroxide. Examples of organic peroxides include octyl peroxide, lauryl peroxide, stearyl peroxide, 1,1,3,3-tetramethylbutylperoxy-2-ethylhexanoate, oxalate peroxide, 2,5-dimethyl-2,5-di(2-ethylhexylperoxy)hexane, 1-cyclohexyl-1-methylethylperoxy-2-ethylhexanoate, tri-hexylperoxy-2-ethylhexanoate, tri-butylperoxy-2-ethylhexanoate, m-toluene-methylperoxide, benzoyl peroxide, methyl ethyl ketone peroxide, acetyl peroxide, tri-butyl hydroperoxide, di-tri-butyl peroxide, cumene hydroperoxide, diisopropylphenyl (dicumyl) peroxide, tri-butyl perbenzoate, p-chlorobenzoyl peroxide, and cyclohexanone peroxide.

[0074] When using thermal free radical generators (E), only one thermal free radical generator (E) may be used, or two or more thermal free radical generators (E) may be used. When using a thermal free radical generator (E), its amount relative to 100 parts by weight of polyimide resin (A) is preferably 0.1 parts by weight or more and 30 parts by weight or less, more preferably 1 part by weight or more and 20 parts by weight or less.

[0075] (Crosslinking agent (F)) In this embodiment, it is preferable that the photosensitive resin composition contains a crosslinking agent (F). By using the crosslinking agent (F), for example, the crosslinking agent (F) reacts with other components contained in the photosensitive resin composition, or the crosslinking agent (F) polymerizes with itself, or the crosslinking agent (F) is tightly entangled with the photosensitive resin composition. It is believed that this can improve the chemical resistance and elongation of the resin film composed of the cured photosensitive resin composition.

[0076] The crosslinking agent (F) preferably has an epoxy group at one end of the molecule and a (meth)acrylic group at the other end. By having this structure, the number of unreacted functional groups is reduced, resulting in improved chemical resistance and elongation of the resin film composed of the cured photosensitive resin composition.

[0077] In this embodiment, "an epoxy group" refers to a substituent of oxopropane (ethylene oxide) that has a 3-membered ring ether in its structural formula. Specific examples include, in addition to epoxy, glycidyl, and glycidyl ether groups, groups in which one or more hydrogen atoms are replaced by epoxy, glycidyl, or glycidyl ether groups (groups in which hydrogen has been removed from the OH group of glycidol). Specifically, 1,2-epoxycyclohexyl groups are examples. As an organic group, there are no particular limitations. Examples include: alkyl groups such as methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, dibutyl, tributyl, pentyl, neopentyl, hexyl, heptyl, octyl, nonyl, decyl, etc.; alkenyl groups such as allyl, pentenyl, vinyl, etc.; alkynyl groups such as ethynyl; alkylene groups such as methylidene, ethylidene, etc.; aryl groups such as phenyl, naphthyl, anthracene, etc.; aralkyl groups such as benzyl, phenethyl, etc.; alkylaryl groups such as tolyl, xylyl, etc.; or cycloalkyl groups such as adamantyl, cyclopentyl, cyclohexyl, cyclooctyl, etc.

[0078] It is preferable that the crosslinking agent (F) contains a compound represented by general formula (1).

[0079]

[0080] In general formula (1), X1 represents (meth)acrylic acid. X2 represents glyoxypropyl, glyoxypropyl ether, epoxy, or 1,2-epoxycyclohexyl groups, which are epoxy groups. n represents an integer from 1 to 10.

[0081] By using X2 selected from the above functional groups, the reactivity between the crosslinking agent (F) and other components contained in the photosensitive resin composition or between the crosslinking agent (F) and each other becomes better, and the chemical resistance and elongation of the resin film composed of the cured photosensitive resin composition are improved, thus making it superior.

[0082] Furthermore, by having n in the range of 1 to 10, the elongation of the resin film composed of the cured form of the photosensitive resin becomes more appropriate, and therefore better.

[0083] In the crosslinking agent (F), it is preferable that the compound satisfying the above general formula (1) contains one or more compounds selected from any one of the following chemical formulas (2) to (4). By containing one or more compounds selected from any one of the following chemical formulas (2) to (4), a high balance between the chemical resistance and elongation of the resin film composed of the cured product of the photosensitive resin composition can be achieved.

[0084]

[0085]

[0086]

[0087] The content of the crosslinking agent (F) relative to 100 parts by weight of polyimide resin (A) is, for example, 0.1 parts by weight or more, preferably 0.5 parts by weight or more, and more preferably 1 part by weight or more. By having the content of the crosslinking agent (F) be 0.1 parts by weight or more, the cured form of the photosensitive resin composition can have high chemical resistance. Furthermore, the content of the crosslinking agent (F) relative to 100 parts by weight of polyimide resin (A) is, for example, 30 parts by weight or less, preferably 20 parts by weight or less, and more preferably 10 parts by weight or less. By keeping the content of the crosslinking agent (F) at 30 parts by weight or less, in addition to maintaining the ratio of polyimide resin (A) in the photosensitive resin composition and achieving good elongation of the cured photosensitive resin composition, the adhesion between the photosensitive resin composition and the substrate can also be significantly improved.

[0088] The photosensitive resin composition of this embodiment may contain only one crosslinking agent (F) or two or more crosslinking agents (F).

[0089] (Silane coupling agent (G)) In this embodiment, the photosensitive resin composition preferably contains a silane coupling agent (G). By using the silane coupling agent (G), the adhesion between the substrate and the hardened film can be further improved, for example.

[0090] As a silane coupling agent (G), for example, silane coupling agents containing amino groups, silane coupling agents containing epoxy groups, silane coupling agents containing (meth)acrylic acid groups, silane coupling agents containing mercapto groups, silane coupling agents containing vinyl groups, silane coupling agents containing urea groups, silane coupling agents containing thioether groups, and silane coupling agents having a cyclic anhydride structure can be used.

[0091] Examples of amino-containing silane coupling agents include bis(2-hydroxyethyl)-3-aminopropyltriethoxysilane, γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminopropylmethyldiethoxysilane, γ-aminopropylmethyldimethoxysilane, N-β(aminoethyl)γ-aminopropyltrimethoxysilane, N-β(aminoethyl)γ-aminopropyltriethoxysilane, N-β(aminoethyl)γ-aminopropylmethyldimethoxysilane, N-β(aminoethyl)γ-aminopropylmethyldiethoxysilane, and N-phenyl-γ-aminopropyltrimethoxysilane. Examples of epoxy-containing silane coupling agents include γ-epoxypropoxypropyltrimethoxysilane, γ-epoxypropoxypropylmethyldiethoxysilane, β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, and γ-epoxypropoxypropyltrimethoxysilane. Examples of silane coupling agents containing (meth)acrylic acid groups include γ-((meth)acrylic acidoxypropyl)trimethoxysilane, γ-((meth)acrylic acidoxypropyl)methyldimethoxysilane, and γ-((meth)acrylic acidoxypropyl)methyldiethoxysilane. Examples of mercapto-containing silane coupling agents include 3-mercaptopropyltrimethoxysilane. Examples of vinyl-containing silane coupling agents include vinyltris(β-methoxyethoxy)silane, vinyltriethoxysilane, and vinyltrimethoxysilane. Examples of urea-containing silane coupling agents include 3-ureopropyltriethoxysilane. Examples of silane coupling agents containing thioether groups include bis(3-(triethoxysilyl)propyl) disulfide and bis(3-(triethoxysilyl)propyl) tetrasulfide. Examples of silane coupling agents having a cyclic anhydride structure include 3-trimethoxysilylpropylsuccinic anhydride, 3-triethoxysilylpropylsuccinic anhydride, and 3-dimethylmethoxysilylpropylsuccinic anhydride.

[0092] In this embodiment, a silane coupling agent having a cyclic anhydride structure is particularly preferred. Although the details are not yet clear, it is speculated that the cyclic anhydride structure readily reacts with the main chain, side chain, and / or end of the polyimide resin (A), thus achieving a particularly good effect on improving adhesion.

[0093] When using silane coupling agent (G), it can be used alone or in combination with two or more bonding agents. When using silane coupling agent (G), if the amount of polyimide resin (A) used is set to 100 parts by weight, the amount used is, for example, 0.1 to 20 parts by weight, preferably 0.3 to 15 parts by weight, more preferably 0.4 to 12 parts by weight, and even more preferably 0.5 to 10 parts by weight.

[0094] (Hardened catalyst) In this embodiment, the photosensitive resin composition preferably contains a curing catalyst (H). The curing catalyst (H) promotes the reaction of the crosslinking agent (F). By using the crosslinking agent (F), the reaction involving the crosslinking agent (F) can be fully carried out, thereby, for example, further increasing the tensile elongation of the cured film.

[0095] As a curing catalyst (H), known compounds that serve as curing catalysts (also commonly referred to as curing accelerators) for epoxy resins can be cited. Examples include: diacrylamide and its derivatives such as 1,8-diacrylbicyclo[5,4,0]undecene-7; amine compounds such as tributylamine and benzyldimethylamine; imidazole compounds such as 2-methylimidazolium; organophosphorus compounds such as triphenylphosphine and methyldiphenylphosphine; tetrasubstituted phosphine salts such as tetraphenylphosphonium tetraphenylboronicate, tetraphenylphosphonium tetraphenylcarboxylate, tetraphenylphosphonium tetranaphthylboronicate, tetraphenylphosphonium tetranaphthyloxyboronicate, tetraphenylphosphonium tetranaphthyloxyboronicate, and tetraphenylphosphine tetraphenylphosphine, 4,4'-sulfonyl diphenolate; and triphenylphosphine with benzoquinone addition. Among these, organophosphorus compounds are particularly preferred.

[0096] When using a hardening catalyst (H), its amount relative to 100 parts by mass of the crosslinking agent (F) is, for example, 1 to 80 parts by mass, preferably 2 to 50 parts by mass, and more preferably 3 to 30 parts by mass.

[0097] (Surfactant (I)) The photosensitive resin composition of this embodiment preferably contains a surfactant (I). This further improves the coatability and film flatness of the photosensitive resin composition. Examples of surfactants (I) include fluorinated surfactants, polysiloxane surfactants, alkyl surfactants, and acrylic surfactants. As another perspective, nonionic surfactants are preferred. Using nonionic surfactants is preferable, for example, from the viewpoint of improving the storage stability of the composition by inhibiting unintended reactions with other components in the composition.

[0098] The surfactant (I) preferably contains at least one of fluorine atoms and silicon atoms. This not only helps to obtain a uniform resin film (improving coatability) or improve developability, but also helps to improve adhesion strength. For example, a nonionic surfactant containing at least one of fluorine atoms and silicon atoms is preferred as such a surfactant. Commercially available products that can be used as surfactants (I) include, for example, the "Megafac" series manufactured by DIC Corporation, such as F-251, F-253, F-281, F-430, F-477, F-551, F-552, F-553, F-554, F-555, F-556, F-557, F-558, F-559, F-560, F-561, F-562, F-563, F-565, F-568, F-569, F-570, F-572, F-574, F-575, F-576, R-40, R-40-LM, R-41, R-94, etc., which are fluorinated oligomer surfactants. NEOS COMPANY... LIMITED manufactures fluorinated nonionic surfactants such as Ftergent250 and Ftergent251, and Wacker Chemie AG manufactures polysiloxane surfactants such as the SILFOAM (registered trademark) series (e.g., SD 100 TS, SD 670, SD 850, SD 860, SD 882). Furthermore, FC4430 or FC4432 manufactured by 3M are also good examples of surfactants.

[0099] In the case where the photosensitive resin composition of this embodiment contains surfactant (I), it may contain one or more surfactants. In the case where the photosensitive resin composition of this embodiment contains surfactant (I), when the content of polyimide resin (A) is set to 100 parts by mass, its amount is, for example, 0.001 to 1 part by mass, preferably 0.005 to 0.5 parts by mass.

[0100] (Solvent (J) / Properties of the Composition) In this embodiment, the photosensitive resin composition preferably contains a solvent (J). This allows for the easy formation of a photosensitive resin film on a substrate (especially a substrate with a stepped surface) using a coating method. Solvent (J) typically includes organic solvents. There are no particular limitations on organic solvents, as long as they are capable of dissolving or dispersing the above components and do not substantially react chemically with the components.

[0101] Examples of organic solvents include acetone, methyl ethyl ketone, toluene, propylene glycol ethyl ether, propylene glycol dimethyl ether, propylene glycol 1-monomethyl ether 2-acetate, diethylene glycol ethyl methyl ether, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, benzyl alcohol, propylene carbonate, ethylene glycol diacetate, propylene glycol diacetate, propylene glycol monomethyl ether acetate, dipropylene glycol methyl n-propyl ether, butyl acetate, γ-butyrolactone, methyl lactate, ethyl lactate, and butyl lactate. These can be used alone or in combination.

[0102] In the case where the photosensitive resin composition of this embodiment contains solvent (J), the photosensitive resin composition of this embodiment is typically in the form of a varnish. More specifically, the photosensitive resin composition of this embodiment is preferably a varnish-like composition in which at least polyimide resin (A) and polyfunctional (meth)acrylate compound (B) are dissolved in solvent (J). Since the photosensitive resin composition of this embodiment is in the form of a varnish, a uniform film can be formed by coating. Furthermore, by "dissolving" polyimide resin (A) and polyfunctional (meth)acrylate compound (B) in solvent (J), a homogeneous cured film can be obtained.

[0103] When using solvent (J), the concentration of all solid components (non-volatile components) in the photosensitive resin composition is preferably 10-50% by mass, more preferably 20-45% by mass. By setting it within this range, each component can be sufficiently dissolved or dispersed. Furthermore, good coatability is ensured, and consequently, good flatness is achieved during spin coating. Moreover, by adjusting the content of non-volatile components, the viscosity of the photosensitive resin composition can be appropriately controlled. As another perspective, the ratio of polyimide resin (A) and polyfunctional (meth)acrylate compound (B) in the overall composition is preferably 20-50% by mass. By using a sufficient amount of polyimide resin (A) and polyfunctional (meth)acrylate compound (B), it is easy to form a film of appropriate thickness.

[0104] (Other ingredients) In addition to the components described above, the photosensitive resin composition of this embodiment may also contain other components as needed. Examples of such components include fillers such as water and silica, sensitizers, and film-forming agents.

[0105] <Manufacturing methods of electronic devices, electronic devices> The manufacturing method of the electronic device in this embodiment includes: The film forming step involves forming a photosensitive resin film on a substrate using the aforementioned photosensitive resin composition; The exposure step involves exposing the photosensitive resin film; and The developing step involves developing the exposed photosensitive resin film. Furthermore, the manufacturing method of the electronic device in this embodiment preferably includes a thermosetting step after the development step, in which the exposed photosensitive resin film is heated to harden it. This allows for the acquisition of a cured film with very high heat resistance. Thus, it is possible to manufacture electronic devices with a hardened film of a photosensitive resin composition having the present embodiment.

[0106] The following description, with reference to the accompanying drawings, details the manufacturing method of the electronic device according to this embodiment and the structure of the electronic device having a cured form of the photosensitive resin composition according to this embodiment.

[0107] Figure 1 is a longitudinal sectional view showing an example of the electronic device of this embodiment. Figure 2 is a partial enlarged view of the area enclosed by the dashed line in Figure 1. In the following description, the upper side of Figure 1 will be referred to as "upper" and the lower side as "lower".

[0108] The electronic device 1 shown in Figure 1 has a so-called stacked package structure, which has a through electrode substrate 2 and a semiconductor package 3 mounted thereon.

[0109] The through electrode substrate 2 includes an insulating layer 21, a plurality of through wirings 221 extending from the upper surface to the lower surface of the insulating layer 21, a semiconductor wafer 23 embedded inside the insulating layer 21, a lower wiring layer 24 disposed on the lower surface of the insulating layer 21, an upper wiring layer 25 disposed on the upper surface of the insulating layer 21, and solder bumps 26 disposed on the lower surface of the lower wiring layer 24.

[0110] The semiconductor package 3 includes a package substrate 31, a semiconductor wafer 32 mounted on the package substrate 31, bonding wires 33 electrically connecting the semiconductor wafer 32 and the package substrate 31, a sealing layer 34 in which the semiconductor wafer 32 and the bonding wires 33 are embedded, and solder bumps 35 disposed on the lower surface of the package substrate 31.

[0111] Furthermore, a semiconductor package 3 is deposited on the through electrode substrate 2. Herein, the solder bumps 35 of the semiconductor package 3 and the upper wiring layer 25 of the through electrode substrate 2 are electrically connected.

[0112] In this type of electronic device 1, there is no need to use a thick substrate such as an organic substrate including a core layer in the through electrode substrate 2, thus making it easy to reduce the thickness. Therefore, it also helps to miniaturize the electronic machine in which the electronic device 1 is built.

[0113] Furthermore, since the multilayer has a through-electrode substrate 2 with different semiconductor wafers and a semiconductor package 3, the mounting density per unit area can be increased. Therefore, it is possible to achieve both miniaturization and high performance.

[0114] The following is a more detailed description of the through electrode substrate 2 and the semiconductor package 3. The through-electrode substrate 2 shown in Figure 2 includes a lower wiring layer 24 and an upper wiring layer 25, which respectively include an insulating layer, a wiring layer, and through wiring. Thus, the lower wiring layer 24 and the upper wiring layer 25 include wiring inside and on the surface, and are electrically connected to each other through the through wiring 221 through the insulating layer 21.

[0115] The wiring layer included in the lower wiring layer 24 is connected to the semiconductor wafer 23 and the solder bumps 26. Therefore, the lower wiring layer 24 functions as a rewiring layer for the semiconductor wafer 23, and the solder bumps 26 function as external terminals of the semiconductor wafer 23.

[0116] As described above, the through wiring 221 shown in FIG2 is configured to penetrate the insulating layer 21. Herein, the lower wiring layer 24 and the upper wiring layer 25 are electrically connected, thereby enabling the stacking of the electrode substrate 2 and the semiconductor package 3, thus achieving high functionality of the electronic device 1.

[0117] As shown in Figure 2, the upper wiring layer 25 includes wiring layer 253, which is connected to through wiring 221 and solder bump 35. Therefore, the upper wiring layer 25 is electrically connected to the semiconductor wafer 23, thus functioning as a rewiring layer for the semiconductor wafer 23, and also as an interposer between the semiconductor wafer 23 and the packaging substrate 31. The hardened film of the photosensitive resin composition of this embodiment can be used as an insulating layer to form the rewiring layer.

[0118] According to this embodiment, an electronic device can be realized that includes a semiconductor wafer 23 and a rewiring layer (upper wiring layer 25) disposed on the surface of the semiconductor wafer 23, and the insulating layer in the rewiring layer is formed by a cured form of the photosensitive resin composition of this embodiment.

[0119] By penetrating the insulating layer 21 through the through wiring 221, the insulating layer 21 is strengthened. Therefore, even if the mechanical strength of the lower wiring layer 24 or the upper wiring layer 25 is low, the overall mechanical strength of the through electrode substrate 2 can be prevented from decreasing. As a result, the lower wiring layer 24 or the upper wiring layer 25 can be further thinned, thereby reducing the thickness of the electronic device 1.

[0120] Furthermore, in addition to the through wiring 221, the electronic device 1 shown in FIG1 also includes a through wiring 222 located on the upper surface of the semiconductor wafer 23 and disposed in a manner that penetrates the insulating layer 21. In this way, an electrical connection can be made between the upper surface of the semiconductor wafer 23 and the upper wiring layer 25.

[0121] An insulating layer 21 is provided to cover the semiconductor wafer 23. This improves the protection of the semiconductor wafer 23. As a result, the reliability of the electronic device 1 is improved. Furthermore, an electronic device 1 that can be easily adapted to a stacked package structure as described in this embodiment can be obtained.

[0122] The diameter W of the through wiring 221 (see Figure 2) is not particularly limited, but approximately 1 to 100 μm is preferred, and approximately 2 to 80 μm is even better. This ensures the conductivity of the through wiring 221 without compromising the mechanical properties of the insulation layer 21.

[0123] The semiconductor package 3 shown in Figure 1 can be any type of package. For example, it can be QFP (Quad Flat Package), SOP (Small Outline Package), BGA (Ball Grid Array), CSP (Chip Size Package), QFN (Quad Flat Non-leaded Package), SON (Small Outline Non-leaded Package), LF-BGA (Lead Flame BGA), etc.

[0124] The arrangement of the semiconductor wafers 32 is not particularly limited. As an example, Figure 1 shows a plurality of semiconductor wafers 32 stacked together. This achieves a high mounting density. Furthermore, the plurality of semiconductor wafers 32 can be arranged side by side along the planar direction, or they can be stacked along the thickness direction while being arranged side by side along the planar direction.

[0125] The packaging substrate 31 can be any substrate, such as a substrate including an insulating layer, wiring layer, and through wiring (not shown). The through wiring enables electrical connection between the solder bumps 35 and the bonding wires 33.

[0126] The sealing layer 34 is made of, for example, a known sealing resin material. By providing this sealing layer 34, the semiconductor wafer 32 or the bonding wire 33 can be protected from external forces or external environmental influences.

[0127] The semiconductor chip 23 on the through electrode substrate 2 and the semiconductor chip 32 on the semiconductor package 3 are arranged close to each other. This allows for the enjoyment of advantages such as high-speed and low-loss communication. From this perspective, for example, if one of the semiconductor chip 23 and semiconductor chip 32 is used as a computing element such as a CPU (Central Processing Unit), GPU (Graphics Processing Unit), or AP (Application Processor), and the other is used as a memory element such as DRAM (Dynamic Random Access Memory) or flash memory, these elements can be arranged close to each other within the same device. This enables the realization of an electronic device 1 that balances high functionality and miniaturization.

[0128] Next, the method for manufacturing the electronic device 1 shown in FIG1 will be described.

[0129] Figure 3 is a step diagram illustrating the method of manufacturing the electronic device 1 shown in Figure 1. Furthermore, Figures 4 through 6 are diagrams illustrating the method of manufacturing the electronic device 1 shown in Figure 1.

[0130] The manufacturing method of electronic device 1 includes: a wafer placement step S1, in which an insulating layer 21 is obtained by embedding a semiconductor wafer 23 and through wirings 221 and 222 on a substrate 202; an upper wiring layer formation step S2, in which an upper wiring layer 25 is formed on the insulating layer 21 and the semiconductor wafer 23; a substrate peeling step S3, in which the substrate 202 is peeled off; a lower wiring layer formation step S4, in which a lower wiring layer 24 is formed; a solder bump formation step S5, in which solder bumps 26 are formed to obtain a through electrode substrate 2; and a stacking step S6, in which a semiconductor package 3 is stacked on the through electrode substrate 2.

[0131] The upper wiring layer formation step S2 includes: a first resin film preparation step S20, which prepares a photosensitive resin varnish 5 (varnish-like photosensitive resin composition) on the insulating layer 21 and the semiconductor wafer 23 to obtain a photosensitive resin layer 2510; a first exposure step S21, which exposes the photosensitive resin layer 2510; a first development step S22, which develops the photosensitive resin layer 2510; a first curing step S23, which cures the photosensitive resin layer 2510; and a wiring layer formation step S24, which forms the upper wiring layer. Line layer 253; second resin film preparation step S25, which applies photosensitive resin varnish 5 to photosensitive resin layer 2510 and wiring layer 253 to obtain photosensitive resin layer 2520; second exposure step S26, which exposes photosensitive resin layer 2520; second development step S27, which develops photosensitive resin layer 2520; second curing step S28, which cures photosensitive resin layer 2520; and through wiring formation step S29, which forms through wiring 254 in opening 424 (through hole).

[0132] The following steps will be explained in sequence. The manufacturing method described below is only one example and is not limited to it.

[0133] [1] Wafer configuration step S1 First, as shown in FIG4(a), a structure 27 for embedding a chip is prepared, which includes: a substrate 202, a semiconductor chip 23 disposed on the substrate 202 and through wirings 221, 222, and an insulating layer 21 disposed in such a way as to embed the chips within an insulating layer.

[0134] There are no particular limitations on the constituent materials of the substrate 202; for example, metal materials, glass materials, ceramic materials, semiconductor materials, organic materials, etc. can be used. Furthermore, the substrate 202 can also be a semiconductor wafer such as a silicon wafer, a glass wafer, etc.

[0135] Semiconductor wafer 23 is attached to substrate 202. In this manufacturing method, as an example, a plurality of semiconductor wafers 23 are separated from each other and simultaneously disposed on the same substrate 202. The plurality of semiconductor wafers 23 may be of the same type or may be of different types. Furthermore, the substrate 202 and the semiconductor wafers 23 may be fixed together by an adhesive layer (not shown) such as a die-attach film.

[0136] If necessary, an interposer (not shown) may also be provided between the substrate 202 and the semiconductor wafer 23. The interposer may function as a rewiring layer for the semiconductor wafer 23, for example. Therefore, the interposer may include pads (not shown) for electrical connection with the electrodes of the semiconductor wafer 23, as described later. This allows for changes in the pad spacing or arrangement pattern of the semiconductor wafer 23, thereby further increasing the design freedom of the electronic device 1. Intermediate layers can be made of inorganic substrates such as silicon substrates, ceramic substrates, and glass substrates, or organic substrates such as resin substrates.

[0137] The insulating layer 21 may be, for example, a resin film (organic insulating layer) containing thermosetting resin or thermoplastic resin as a component of photosensitive resin, or it may be a conventional sealing material used in the field of semiconductor technology.

[0138] Materials used to construct through wirings 221 and 222 include, for example, copper or copper alloys, aluminum or aluminum alloys, gold or gold alloys, silver or silver alloys, nickel or nickel alloys, etc.

[0139] Furthermore, a structure 27 with embedded chips can also be prepared using a different method than described above.

[0140] [2] Upper wiring layer formation step S2 Next, an upper wiring layer 25 is formed on the insulating layer 21 and the semiconductor wafer 23.

[0141] [2-1] Step S20 for preparing the first resin film First, as shown in FIG4(b), a photosensitive resin varnish 5 is coated (deposited) on the insulating layer 21 and the semiconductor wafer 23. Thereby, as shown in FIG4(c), a liquid film of the photosensitive resin varnish 5 is obtained. The photosensitive resin varnish 5 is the photosensitive resin composition of this embodiment.

[0142] The application of photosensitive resin varnish 5 can be carried out using, for example, a spin coater, a bar coater, a sprayer, or an inkjet printer.

[0143] The viscosity of the photosensitive resin varnish 5 is not particularly limited, but is 10 cP to 6000 cP, preferably 20 cP to 5000 cP, and even more preferably 30 cP to 4000 cP. By using the viscosity of the photosensitive resin varnish 5 within the above range, a thinner photosensitive resin layer 2510 can be formed (see Figure 4(d)). As a result, the upper wiring layer 25 can be made thinner, thereby facilitating the miniaturization of the electronic device 1. The viscosity of the photosensitive resin varnish 5 is, for example, a value obtained by measuring it using a cone-plate viscometer (TV-25, manufactured by TOKI SANGYO CO.,LTD.) at a rotation speed of 100 rpm.

[0144] Next, the liquid coating of the photosensitive resin varnish 5 is dried. In this way, the photosensitive resin layer 2510 shown in FIG4(d) is obtained.

[0145] There are no particular limitations on the drying conditions of the photosensitive resin varnish 5. For example, heating at a temperature of 80 to 150°C for 1 to 60 minutes can be given.

[0146] In this step, a process of preparing a photosensitive resin film by film-forming the photosensitive resin varnish 5 can be used instead of the process of coating the photosensitive resin varnish 5. The photosensitive resin film is the photosensitive resin composition of this embodiment and is a photosensitive resin film.

[0147] Photosensitive resin films are manufactured, for example, by applying a photosensitive resin varnish 5 to a substrate such as a carrier film using various coating devices, and then drying the resulting coating film.

[0148] After the photosensitive resin layer 2510 is formed, it is subjected to a pre-exposure heat treatment as needed. By performing the pre-exposure heat treatment, the molecules contained in the photosensitive resin layer 2510 can be stabilized, thereby stabilizing the reaction in the first exposure step S21 described later. Furthermore, by performing the heating under the heating conditions described later, the adverse effects of heating on the photoacid generator can be minimized.

[0149] The pre-exposure heating temperature is preferably 70~130℃, more preferably 75~120℃, and even more preferably 80~110℃. If the pre-exposure heating temperature is lower than the above lower limit, it may be impossible to achieve the purpose of stabilizing the molecules through pre-exposure heating. On the other hand, if the pre-exposure heating temperature is higher than the above upper limit, the photoacid generator may become too active, making it difficult to generate acid even when irradiated with light in the first exposure step S21 described later, thereby reducing the patterning processing accuracy.

[0150] The pre-exposure heating time is appropriately set according to the pre-exposure heating temperature, but preferably 1 to 10 minutes, more preferably 2 to 8 minutes, and even more preferably 3 to 6 minutes at the above-mentioned temperature. If the pre-exposure heating time is less than the lower limit of the above-mentioned value, the heating time is insufficient, and therefore there is a risk that the purpose of stabilizing the molecules through pre-exposure heating may not be achieved. On the other hand, if the pre-exposure heating time is greater than the upper limit of the above-mentioned value, the heating time is too long, and therefore there is a risk that even if the pre-exposure heating temperature falls within the above-mentioned range, the effect of the photoacid generator may be hindered.

[0151] There are no particular restrictions on the environment for heat treatment. It can be an inert gas environment or a reducing gas environment, etc., but if operational efficiency is taken into consideration, it is best to do it at atmospheric level.

[0152] There is no particular limitation on environmental pressure. It can be under reduced or increased pressure, but if operational efficiency is considered, then atmospheric pressure is preferred. Furthermore, atmospheric pressure refers to a pressure of approximately 30~150 kPa, with atmospheric pressure being the most ideal.

[0153] [2-2] First exposure step S21 Next, the photosensitive resin layer 2510 is exposed.

[0154] First, as shown in FIG4(d), a mask 412 is disposed in a specific area on the photosensitive resin layer 2510. Then, light (active radiation) is irradiated through the mask 412. In this way, the photosensitive resin layer 2510 is exposed according to the pattern of the mask 412.

[0155] Figure 4(d) illustrates a case where the photosensitive resin layer 2510 exhibits so-called negative photosensitivity. In this example, the region of the photosensitive resin layer 2510 corresponding to the light-blocking portion of the mask 412 dissolves in the developing solution.

[0156] On the other hand, in the region corresponding to the transmissive portion of the mask 412, active chemical species are generated by the photosensitizer (C). The active chemical species act as catalysts for the curing reaction.

[0157] There are no particular limitations on the exposure amount during the exposure process. 100~2000 mJ / cm² is preferred, and 200~1000 mJ / cm² is even better. This helps to suppress underexposure and overexposure in the photosensitive resin layer 2510. As a result, high patterning accuracy can ultimately be achieved. Subsequently, as needed, the photosensitive resin layer 2510 is subjected to post-exposure heat treatment.

[0158] There is no particular limitation on the temperature of the post-exposure heat treatment. Preferably, it is 50~150℃, more preferably 50~130℃, further preferably 55~120℃, and most preferably 60~110℃. By performing the post-exposure heat treatment at this temperature, the catalytic effect of the generated acid is sufficiently enhanced, allowing the thermosetting resin to react fully in a shorter time. By keeping the temperature within the above range, the reduction in patterning precision caused by the promotion of acid diffusion can be suppressed. By setting the post-exposure heat treatment temperature above or above the aforementioned lower limit, the reaction rate of the thermosetting resin can be increased, thereby improving productivity. On the other hand, by setting the post-exposure heat treatment temperature below or below the aforementioned upper limit, the decrease in patterning processing accuracy caused by the promotion of acid diffusion can be suppressed.

[0159] The post-exposure heat treatment time is set appropriately according to the post-exposure heat treatment temperature. At the above temperature, it is preferably 1 to 30 minutes, more preferably 2 to 20 minutes, and even more preferably 3 to 15 minutes. By implementing a post-exposure heat treatment for this duration, the thermosetting resin can be fully reacted, and the diffusion of acid can be suppressed, thereby preventing a decrease in the processing accuracy of patterning.

[0160] There are no particular restrictions on the environment for post-exposure heating treatment. It can be an inert gas environment or a reducing gas environment, etc., but if operational efficiency is a consideration, it is best to do it in the atmosphere.

[0161] There are no particular limitations on the ambient pressure for post-exposure heat treatment. It can be under reduced or increased pressure, but atmospheric pressure is preferred if operational efficiency is taken into account. This allows for relatively easy implementation of pre-exposure heat treatment. Furthermore, atmospheric pressure refers to a pressure of approximately 30-150 kPa, with atmospheric pressure being preferable.

[0162] [2-3] First developing step S22 Next, the photosensitive resin layer 2510 is developed. Herein, an opening 423 through the photosensitive resin layer 2510 is formed in the area corresponding to the light-shielding portion of the mask 412 (see FIG5(e)).

[0163] Examples of developing solutions include organic developing solutions and water-soluble developing solutions. In this embodiment, it is preferable that the developer contains an organic solvent. More specifically, it is preferable that the developer is a developer whose main component is an organic solvent (a developer whose components are more than 95% by mass of organic solvent). By using a developer containing an organic solvent for development, compared with the case of using an alkaline developer (aqueous), it is possible to suppress pattern swelling and other issues caused by the developer. That is, it is easier to obtain fine patterns.

[0164] Specifically, examples of organic solvents that can be used in developers include ketone solvents such as cyclopentanone, ester solvents such as propylene glycol monomethyl ether acetate (PGMEA) or butyl acetate, and ether solvents such as propylene glycol monomethyl ether. As a developer, an organic solvent developer that consists only of organic solvents and contains only unavoidable impurities can be used. Unavoidable impurities include metallic elements and moisture, but from the viewpoint of preventing contamination of electronic devices, the fewer unavoidable impurities, the better.

[0165] There are no particular limitations on the method of bringing the developer into contact with the photosensitive resin layer 2510. Commonly known methods such as immersion, puddle method, and spraying can be appropriately applied.

[0166] The development step typically takes about 5 to 300 seconds, preferably in the range of 10 to 120 seconds, and can be adjusted appropriately depending on the thickness of the resin film or the shape of the pattern to be formed.

[0167] [2-4] First hardening step S23 After development, the photosensitive resin layer 2510 is subjected to a hardening treatment (post-development heat treatment). The conditions for the hardening treatment are not particularly limited, and can be set to a heating temperature of approximately 160-250°C and a heating time of approximately 30-240 minutes. This suppresses the thermal impact on the semiconductor wafer 23 while simultaneously hardening the photosensitive resin layer 2510, thereby obtaining the organic insulating layer 251.

[0168] [2-5] Wiring layer formation step S24 Next, a wiring layer 253 is formed on the organic insulating layer 251 (see FIG. 5(f)). The wiring layer 253 is formed, for example, by obtaining a metal layer using a vapor phase deposition method such as sputtering or vacuum evaporation, and then patterning it by photolithography and etching. Surface modification treatments such as plasma treatment can also be performed before forming the wiring layer 253.

[0169] [2-6] Step S25 for preparing the second resin film Next, as shown in FIG5(g), a photosensitive resin layer 2520 is obtained in the same manner as in step S20 of the first resin film preparation. The photosensitive resin layer 2520 is configured to cover the wiring layer 253. Subsequently, the photosensitive resin layer 2520 is subjected to a pre-exposure heat treatment as needed. The treatment conditions are, for example, those described in step S20 of the first resin film preparation step.

[0170] [2-7] Second exposure step S26 Next, the photosensitive resin layer 2520 is exposed. The processing conditions are, for example, those described in the first exposure step S21. Subsequently, the photosensitive resin layer 2520 is subjected to post-exposure heat treatment as needed. The treatment conditions are, for example, those described in the first exposure step S21.

[0171] [2-8] Second developing step S27 Next, the photosensitive resin layer 2520 is developed. The processing conditions are, for example, those described in the first development step S22. Herein, an opening 424 is formed that penetrates the photosensitive resin layers 2510 and 2520 (see FIG5(h)).

[0172] [2-9] Second hardening step S28 After development, the photosensitive resin layer 2520 is subjected to a curing treatment (heat treatment after development). The curing conditions are, for example, those described in the first curing step S23. In this way, the photosensitive resin layer 2520 is cured to obtain the organic insulating layer 252 (see FIG. 6(i)).

[0173] In this embodiment, the upper wiring layer 25 has two layers: an organic insulating layer 251 and an organic insulating layer 252, but it may also have three or more layers. In this case, it is sufficient to repeat the series of steps from the additional wiring layer formation step S24 to the second curing step S28 after the second curing step S28.

[0174] [2-10] Step S29 of forming through wiring Next, a through wiring 254 as shown in FIG6(i) is formed on the opening 424.

[0175] The through wiring 254 is formed using known methods, such as the following method.

[0176] First, a seed layer (not shown) is formed on the organic insulating layer 252. The seed layer is formed on the inner surface (side and bottom surface) of the opening 424 and the upper surface of the organic insulating layer 252. As a seed layer, for example, a copper seed layer can be used. Alternatively, the seed layer can be formed, for example, by sputtering. The seed layer can be made of the same type of metal as the through wiring 254 to be formed, or it can be made of a different type of metal.

[0177] Next, a resist layer (not shown) is formed on the area outside the opening 424 in the seed layer (not shown). Then, using this resist layer as a mask, metal is filled into the opening 424. This filling is performed, for example, by electroplating. Examples of the metal used for filling include copper or copper alloys, aluminum or aluminum alloys, gold or gold alloys, silver or silver alloys, nickel or nickel alloys, etc. By embedding a conductive material within the opening 424, a through-wire 254 is formed.

[0178] Next, the resist layer (not shown) is removed. Then, the seed layer (not shown) on the organic insulating layer 252 is removed. For this purpose, for example, a flash etching method can be used. The location of the through wiring 254 is not limited to the location shown in the figure.

[0179] [3] Substrate peeling step S3 Next, as shown in FIG6(j), substrate 202 is peeled off. This exposes the lower surface of insulating layer 21.

[0180] [4] Step S4 for forming the lower wiring layer Next, as shown in FIG6(k), a lower wiring layer 24 is formed on the lower surface side of the insulating layer 21. The lower wiring layer 24 can be formed by any method, for example, it can be formed in the same manner as the upper wiring layer forming step S2 described above. The lower wiring layer 24 thus formed is electrically connected to the upper wiring layer 25 via a through wiring 221.

[0181] [5] Solder bump formation step S5 Next, as shown in Figure 6(l), solder bumps 26 are formed on the lower wiring layer 24. Alternatively, a protective film such as a solder resist layer can be formed on the upper wiring layer 25 or the lower wiring layer 24 as needed. Thus, a through electrode substrate 2 is obtained.

[0182] The through-electrode substrate 2 shown in Figure 6(l) can be divided into a plurality of regions. Therefore, for example, by monolithically dividing the through-electrode substrate 2 along the single-point dashed line shown in Figure 6(l), a plurality of through-electrode substrates 2 can be manufactured efficiently. Furthermore, monolithization can be achieved, for example, using a diamond cutting tool.

[0183] [6] Stacking step S6 Next, a semiconductor package 3 is disposed on the monolithically formed through-electrode substrate 2. Thus, the electronic device 1 shown in FIG1 is obtained.

[0184] This method for manufacturing electronic device 1 can be applied to wafer-level processes or panel-level processes using large-area substrates. This improves the manufacturing efficiency of electronic device 1, thereby reducing costs.

[0185] <Optical Devices> The optical device of this embodiment includes: Light-emitting elements; Wiring, which is electrically connected to the aforementioned light-emitting element; and An insulating film that covers the aforementioned wiring. The aforementioned insulating film is a hardened film of the aforementioned photosensitive resin composition.

[0186] Examples of optical devices include: display devices such as liquid crystal displays, organic EL displays, touch panels, electronic paper, color filters, sub-millimeter LED displays, and micro LED displays; light-emitting devices such as LEDs, sub-millimeter LEDs, micro LEDs, and laser diodes; and light-receiving devices such as solar cells and CMOS sensors. These can be used in redistribution layers, interlayer insulating films, and sealing materials (outer coatings). The photosensitive resin composition of this embodiment is particularly suitable for use with micro LEDs.

[0187] The following description, with reference to the accompanying drawings, details the manufacturing method of the optical device of this embodiment and the structure of the optical device of the cured form of the photosensitive resin composition of this embodiment.

[0188] (Film forming step: FIG7A) In the film forming step, a photosensitive resin film 73 is formed on the stepped side of a substrate 71 having a step 710 using the photosensitive resin composition of this embodiment. The substrate 71 is not particularly limited. Examples of substrate 71 include silicon wafers, ceramic substrates, aluminum substrates, SiC wafers, and GaN wafers. The step 710 is, for example, a Cu redistribution. Of course, the step 710 can also be a step other than a Cu redistribution. The height of the step 710 is, for example, 1~10 μm, preferably 1~5 μm. The thickness of the photosensitive resin film 73 (the thickness of the portion without the step 710) is, for example, 1 to 15 μm, preferably 1 to 10 μm. This thickness is greater than the height of the step 710.

[0189] Methods for forming the photosensitive resin film 73 include applying the liquid photosensitive resin composition to the substrate by spin coating, spray coating, dipping, printing, roller coating, inkjet coating, etc. Typically, spin coating is a method for forming the resin film. The thickness of the photosensitive resin film 73 can be adjusted by changing the film formation conditions or adjusting the viscosity of the photosensitive resin composition.

[0190] It is preferable to heat-dry the photosensitive resin film 73 after the film-forming step and before the exposure step. This heat-drying is sometimes referred to as "pre-baking". The temperature for heat drying is typically 50–180°C, preferably 60–150°C. The heat drying time is typically 30–600 seconds, preferably around 30–300 seconds. This heat drying process effectively removes the solvent from the photosensitive resin composition. Typically, heating is performed using a heating plate or oven.

[0191] (Exposure steps: Figure 7B) In the exposure step, the photosensitive resin film 73 is exposed via a photomask 720. The active light source for exposure can be, for example, X-rays, electron beams, ultraviolet light, or visible light. In terms of wavelength, active light in the range of 200-500 nm is preferred. From the viewpoint of pattern resolution and ease of operation, gamma rays, h-rays, or i-rays from a mercury lamp are preferred as the light source. Furthermore, two or more types of light can be used in combination. Contact aligners, mirror projectors, or steppers are preferred as exposure devices. The exposure amount in the exposure step is usually between 40 and 1500 mJ / cm² (preferably 80 to 1000 mJ / cm²), and can be adjusted appropriately according to the sensitivity of the photosensitive resin composition, the thickness of the resin film, and the desired pattern shape.

[0192] It is preferable to heat the resin film between the exposure and development steps (post-exposure heating). This allows substances that have cracked or decomposed due to exposure (such as photosensitizers) to react, potentially resulting in a better pattern shape. The temperature and time for post-exposure heating are, for example, approximately 50-200°C and 10-600 seconds.

[0193] (Developing steps: Figure 7C) In the developing step, the photosensitive resin film exposed in the exposure step is developed using a developing solution. This removes a portion of the photosensitive resin film 73, resulting in a resin film 73A with an opening 75. The photosensitive resin composition in this embodiment is typically negative. Therefore, the opening 75 is located at a portion corresponding to the light-shielding portion of the photomask 720. The development step can be carried out by methods such as immersion, coating, or spin coating.

[0194] In this embodiment, it is preferable that the developer contains an organic solvent. More specifically, it is preferable that the developer is a developer whose main component is an organic solvent (a developer whose components are more than 95% by mass of organic solvent). By using a developer containing an organic solvent for development, compared with the case of using an alkaline developer (aqueous), it is possible to suppress pattern swelling and other issues caused by the developer. That is, it is easier to obtain fine patterns.

[0195] Specifically, examples of organic solvents that can be used in developers include ketone solvents such as cyclopentanone, ester solvents such as propylene glycol monomethyl ether acetate (PGMEA) or butyl acetate, and ether solvents such as propylene glycol monomethyl ether. As a developer, an organic solvent developer that consists only of organic solvents and contains only unavoidable impurities can be used. In addition, as unavoidable impurities, there are metal elements, but from the point of view of preventing contamination of electronic devices, the fewer unavoidable impurities, the better.

[0196] The development step typically takes about 5 to 300 seconds, preferably in the range of 10 to 120 seconds, and can be adjusted appropriately depending on the thickness of the resin film or the shape of the pattern to be formed.

[0197] Between the developing step and subsequent steps, a curing step may be included, for example, to harden the resin film 73A. Curing may be performed, for example, by heat treatment at 150-250°C for 30-240 minutes. Even after this curing step, the surface (upper surface) of the resin film 73A remains well-flattened when the resin film 73A is formed using the photosensitive resin composition of this embodiment.

[0198] (Additional wiring steps: Figure 7D) In the developing step, a portion of the opening 75 can be configured with Cu rewiring 711 that differs from the step difference 710 (e.g., Cu rewiring). At this time, due to the high flatness of the upper surface of the resin film 73A, fine Cu rewiring 711 can be configured with high precision.

[0199] The embodiments of the present invention have been described above, but these are merely examples of the present invention, and various configurations other than those described above may also be used. Furthermore, the present invention is not limited to the above embodiments, and modifications and improvements that achieve the objectives of the present invention are all included in the present invention. [Example]

[0200] The embodiments of the present invention will be described in detail with reference to examples and comparative examples. The present invention is not limited to the embodiments, as will be explained below. Hereinafter, "TEMPO" is an abbreviation for "2,2,6,6-tetramethylpiperidine-1-oxy". Other abbreviations will be explained appropriately in the text.

[0201] Synthesis of Polyimide Resin (Synthesis of polyimide resin (A-1)) Polymerization was carried out in a 5L separable flask equipped with a stirrer and cooling pipe by adding 304.2 g (0.95 moles) of 2,2'-bis(trifluoromethyl)benzidine (TFMB), 355.39 g (0.80 moles) of 4,4'-(hexafluoroisopropylidene) diaphthalic anhydride (6FDA), 62.04 g (0.20 moles) of 4,4'-oxydiphthalic dianhydride, and 1684 g of GBL. The reaction was carried out at room temperature under nitrogen atmosphere for 16 hours. Subsequently, the reaction solution was heated to 180°C in an oil bath and reacted for 3 hours, followed by cooling to room temperature to prepare a polyimide resin solution. Next, the reaction solution was added dropwise to a 4 / 7 mixture of isopropanol and water under stirring, causing the resin solid to precipitate. After coarse filtration, the obtained solid was further washed with 4 / 7 isopropanol and water to obtain a white solid of polyimide. The white solid obtained by vacuum drying at 200°C yielded a polyimide resin (A-1) with anhydride groups at the ends. The weight-average molecular weight (Mw) of the polyimide resin (A-1), measured by GPC, is 49,000. Furthermore, the amide content of the polyimide resin (A-1), measured by NMR, is 98%.

[0202]

[0203] (Synthesis of polyimide resin (A-2)) Polymerization was carried out in a 5L separable flask equipped with a stirrer and cooling pipe by adding 268.3 g (0.95 moles) of 4,4-diamino-3,3-diethyl-5,5-dimethyldiphenylmethane (MED-J), 494.87 g (0.8 moles) of 4-[4-(1,3-di-side-oxyisobenzofuran-5-ylcarbonyloxy)-2,3,5-trimethylphenyl]-2,3,6-trimethylphenyl-1,3-di-side-oxyisobenzofuran-5-carboxylic acid ester (TMPBP-TME), 62.04 g (0.20 moles) of 4,4'-oxyphthalic acid dianhydride, and 1684 g of GBL. The reaction was carried out at room temperature under nitrogen atmosphere for 16 hours. Subsequently, the reaction solution was heated to 180°C in an oil bath and reacted for 3 hours, followed by cooling to room temperature to prepare a polyimide resin solution. Next, the reaction solution was added dropwise to a 4 / 7 mixture of isopropanol and water under stirring, causing the resin solid to precipitate. After coarse filtration, the obtained solid was further washed with 4 / 7 isopropanol and water to obtain a white solid of polyimide. The white solid obtained by vacuum drying at 200°C yielded a polyimide resin (A-2) with anhydride groups at the ends. The weight-average molecular weight (Mw) of the polyimide resin (A-2), measured by GPC, is 49,000. Furthermore, the amide content of the polyimide resin (A-2), measured by NMR, is 98%.

[0204]

[0205] (Synthesis of polyimide resin (A-3)) Polymerization was carried out in a 5L separable flask equipped with a stirrer and cooling pipe by adding 304.22 g (0.95 moles) of 2,2'-bis(trifluoromethyl)benzidine (TFMB), 494.87 g (0.8 moles) of 4-[4-(1,3-di-side-oxyisobenzofuran-5-ylcarbonyloxy)-2,3,5-trimethylphenyl]-2,3,6-trimethylphenyl-1,3-di-side-oxyisobenzofuran-5-carboxylic acid ester (TMPBP-TME), 62.04 g (0.20 moles) of 4,4'-oxyphthalic acid dianhydride, and 1684 g of GBL. The reaction was carried out at room temperature under nitrogen atmosphere for 16 hours. Subsequently, the reaction solution was heated to 180°C in an oil bath and reacted for 3 hours, followed by cooling to room temperature to prepare a polyimide resin solution. Next, the reaction solution was added dropwise to a 4 / 7 mixture of isopropanol and water under stirring, causing the resin solid to precipitate. After coarse filtration, the obtained solid was further washed with 4 / 7 isopropanol and water to obtain a white solid of polyimide. The white solid obtained by vacuum drying at 200°C yielded a polyimide resin (A-3) with anhydride groups at the ends. The weight-average molecular weight (Mw) of the polyimide resin (A-3), measured by GPC, is 49,000. Furthermore, the amide content of the polyimide resin (A-3), measured by NMR, is 98%.

[0206]

[0207] (Synthesis of polyimide resin (A-4)) Polymerization was carried out in a 5L separable flask equipped with a stirrer and cooling pipe by adding 304.22 g (0.95 mol) of 2,2'-bis(trifluoromethyl)benzidine (TFMB), 355.89 g (0.8 mol) of 4,4'-(hexafluoroisopropylidene) phthalic anhydride (6FDA), 62.04 g (0.20 mol) of 4,4'-oxyphthalic anhydride, and 1684 g of GBL. The reaction was carried out at room temperature under nitrogen atmosphere for 16 hours. Then, the reaction solution was heated to 180°C in an oil bath and reacted for 3 hours, followed by cooling to room temperature to prepare a polyimide resin solution. Next, the reaction solution was added dropwise to a 4 / 7 mixture of isopropanol and water under stirring, causing the resin solid to precipitate. After coarse filtration, the obtained solid was further washed with 4 / 7 isopropanol and water to obtain a white solid of polyimide. The white solid obtained by vacuum drying at 200°C yielded a polyimide resin (A-4) with anhydride groups at the ends. The weight-average molecular weight (Mw) of the polyimide resin (A-4), measured by GPC, is 49,000. Furthermore, the amide content of the polyimide resin (A-4), measured by NMR, is 98%.

[0208]

[0209] <Preparation of Photosensitive Resin Composition> The raw materials, according to Table 1 below, were stirred at room temperature until completely dissolved to obtain a solution. The solution was then filtered through a nylon filter with a pore size of 0.2 μm. This yielded a varnish-like photosensitive resin composition.

[0210] The details of the raw materials for each component in Table 1 are as follows.

[0211] <(A) Polyimide Resin> (A-1) The polyimide resin synthesized above (A-1) (A-2) The polyimide resin synthesized above (A-2) (A-3) The polyimide resin synthesized above (A-3) (A-4) The polyimide resin synthesized above (A-4)

[0212] <(B) Polyfunctional (meth)acrylate compounds> (B-1)Viscoat#195 (made by OSAKA ORGANIC CHEMICAL INDUSTRY LTD., 1,4-Butanediol diacrylate) (B-2)Viscoat#802 (a mixture of compounds having 5 to 10 acrylonitrile groups, manufactured by OSAKA ORGANIC CHEMICAL INDUSTRY LTD.) (B-3)A-9550 (a mixture of compounds containing 5 to 6 acrylonitrile groups, manufactured by SHIN-NAKAMURA CHEMICAL CO, LTD.) (B-4)Viscoat#300 (a mixture of compounds containing 3 to 4 acrylonitrile groups, manufactured by OSAKA ORGANIC CHEMICAL INDUSTRY LTD.)

[0213] The following shows the structures of (B-1) to (B-4) above.

[0214]

[0215] <(C) Photosensitive agent> (C-1) Irgacure OXE01 (manufactured by BASF, oxime ester type photoradical generator)

[0216] <(E) Thermal Free Radical Generators> (E-1)PERKADOX BC (manufactured by KAYAKU NOURYON CORPORATION, organic peroxide, diisopropylphenyl peroxide)

[0217] <(F) Crosslinking agent> (F-1)4HBAGE (Made by Mitsubishi Chemical Corporation, 4-hydroxybutyl acrylate glycidyl ether, compound of chemical formula (2)) (F-2)CYCLOMER M100 (manufactured by DAICEL CORPORATION, 3,4-epoxycyclohexyl methyl methacrylate, compound of chemical formula (3))

[0218] <(G)Silane Coupling Agent> (G-1)X-12-967C (manufactured by Shin-Etsu Chemical Co., Ltd.) (G-2)KBM-403 (manufactured by Shin-Etsu Chemical Co., Ltd.)

[0219] <(H) Hardening Catalyst> (H-1)4,4'-Sulfodiol Tetraphenylphosphonium The synthesis method of the above-mentioned hardening catalyst (H-1) is as follows. 37.5 g (0.15 mol) of 4,4'-bisphenol S and 100 mL of methanol were placed in a separable flask equipped with a stirrer and dissolved by stirring at room temperature. Then, while stirring, a solution prepared by dissolving 4.0 g (0.1 mol) of sodium hydroxide in 50 mL of methanol was added. Next, a solution prepared by dissolving 41.9 g (0.1 mol) of tetraphenylphosphine bromide in 150 mL of methanol was added. After stirring for a period of time, 300 mL of methanol was added, and then the solution in the flask was added dropwise to a large amount of water while stirring, resulting in a white precipitate. The precipitate was filtered and dried. Through the above steps, a white crystalline hardening catalyst (H-1) was obtained.

[0220] <(I) Surfactants> (I-1)FC4432 (manufactured by 3M, fluorine-based)

[0221] <(J)(Solvent)> (J-1)γ-Butyrolactone (GBL) (J-2) Ethyl lactate (EL)

[0222] <(D) Polymerization Inhibitor> (D-1)Irganox 1035 (manufactured by BASF, hindered phenolic compound) (D-2)Irganox 1010 (manufactured by BASF, hindered phenolic compound) (D-3)4-BenzyloxyTEMPO (manufactured by Seiko Chemical Co., Ltd., N-oxygenated compound) (D-4)2,6-Di-tertiary butyl-p-cresol (manufactured by Tokyo Chemical Industry Co., Ltd., hindered phenolic compound) (D-5)N,N-Diphenylnitrosamine (manufactured by Tokyo Chemical Industry Co., Ltd., N-oxygenated compound) (D-6) Cupferron (manufactured by Tokyo Chemical Industry Co., Ltd., N-oxygenated compound) (D-7)TEMPO (Tokyo Chemical Industry Co., Ltd., N-oxygen compound) (D-8)4-HydroxyTEMPO (manufactured by Seiko Chemical Co., Ltd., N-oxygenated compound) (D-9) Sebacic acid bisTEMPO (manufactured by Seiko Chemical Co., Ltd., N-oxygenated compound) (D-10)Irganox 1726 (manufactured by BASF, hindered phenolic compound) (D-11)Irganox 1520L (manufactured by BASF, hindered phenolic compound)

[0223] The following shows the structures of (D-1) to (D-11) above.

[0224]

[0225] <Evaluation of Focus Margin> The photosensitive resin compositions of each embodiment and comparative example were coated onto a 12-inch copper-plated (Ra=0.08μm) wafer using a spin coater to achieve a dried film thickness of 5μm. Subsequently, the wafers were dried at 120°C for 3 minutes using a hot plate to obtain the photosensitive resin film. Using an i-ray stepper (CANON INC., FPA-5500iX, NA=0.28), the photosensitive resin film was irradiated with i-rays through a photomask (with a perforated pattern of circular through-holes with a diameter of 3 μm) while the exposure dose was changed from 190 mJ to 550 mJ in increments of 30 mJ / min and the focal spot was changed from -9 μm to +3 μm in increments of 1 μm. Subsequently, cyclopentanone was used as the developer, and development was performed at 2500 rpm for 30 seconds. The mixture was then rinsed with PGMEA at 2500 rpm for 10 seconds, followed by drying by rotation for 20 seconds to obtain the developed film (negative pattern). This film was then dried at 170°C for 10 minutes using a hot plate, and subsequently heat-treated at 200°C for 120 minutes under nitrogen atmosphere. These steps yielded a cured copy of the photosensitive resin composition. Within the exposure range described above, for those with a 3μmΦ through-hole without base or bridging, the difference between the maximum and minimum focal lengths was calculated as the focal margin, and the results are recorded in Table 1. In each embodiment and comparative example, when the focal margin was calculated under multiple exposures, the value of the maximum focal margin was recorded.

[0226] <Evaluation of tensile elongation> (Preparation of test pieces for measuring tensile elongation) The photosensitive resin composition was spin-coated onto an 8-inch silicon wafer to a film thickness of 10 μm after drying. Then, it was heated at 120°C for 3 minutes to obtain the photosensitive resin film. The obtained photosensitive resin film was exposed to 300 mJ / cm² using a high-pressure mercury lamp. Subsequently, the exposed resin film, along with the silicon wafer, was immersed in cyclopentanone for 30 seconds. Then, it was heat-treated at 200°C for 120 minutes under nitrogen. These steps yielded a cured product of the photosensitive resin composition. The hardened material, along with the silicon wafer, was cut into 5mm wide sections using a dicing machine. The cut film was then peeled off from the substrate by immersion in a 2% hydrofluoric acid aqueous solution. The peeled film was dried at 60°C for 10 hours to obtain a test piece (30mm × 5mm × 10μm thick).

[0227] (Measurement of tensile elongation) Tensile testing was conducted on the obtained test specimens using a tensile testing machine (Orientec Corporation, TENSILON RTC-1210A) at 23°C, following a method based on JIS K 7161, and the tensile elongation of the specimens was measured. The tensile speed during the tensile test was set to 5 mm / min. The unit of tensile elongation is %.

[0228] Table 1 shows the blending of raw materials for each component and the above evaluation results.

[0229] Table 1 Comparative Example 1 Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Example 9 Example 10 Example 11 Example 12 Example 13 Example 14 Polyimide resin (A) (A-1) 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 (A-2) - - - - - - - - - - - - - - - (A-3) - - - - - - - - - - - - - - - (A-4) - - - - - - - - - - - - - - - Multifunctional (meth)propene Ester compounds (B) (B-1) 70 - - - - - - - - - - - - - - (B-2) - 60 60 60 60 60 60 60 60 60 60 60 60 60 60 (B-3) - 20 20 20 20 20 20 20 20 20 20 20 20 20 20 (B-4) - 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Photosensitive agent (C) (C-1) 10 10 10 10 10 15 20 10 10 10 10 15 20 10 10 thermal free radical generator (E) (E-1) 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Crosslinking agent (F) (F-1) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 (F-2) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 Silane coupling agent (G) (G-1) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 (G-2) 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 Hardened catalyst (H) (H-1) 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 Surfactant (I) (I-1) 0.04 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 Solvent (J) (J-1) 257 280 280 280 280 286 292 280 280 280 280 286 292 280 280 (J-2) 257 280 280 280 280 286 292 280 280 280 280 286 292 280 280 Polymerization inhibitor (D) (D-1) - 1 0.5 1.5 2 1 1 - - - - - - - - (D-2) - - - - - - - 1 0.5 1.5 2 1 1 - - (D-3) - - - - - - - - - - - - - 1 0.5 (D-4) - - - - - - - - - - - - - - - (D-5) - - - - - - - - - - - - - - - (D-6) - - - - - - - - - - - - - - - (D-7) - - - - - - - - - - - - - - - (D-8) - - - - - - - - - - - - - - - (D-9) - - - - - - - - - - - - - - - (D-10) - - - - - - - - - - - - - - - (D-11) - - - - - - - - - - - - - - - Evaluation Focus margin [μm] 0 6 6 5 4 6 8 5 6 5 4 7 8 6 6 Elongation (%) 46 42 39 44 45 52 63 40 39 45 47 55 61 44 39 Table 1 (continued) Example 15 Example 16 Example 17 Example 18 Example 19 Example 20 Example 21 Example 22 Example 23 Example 24 Example 25 Example 26 Example 27 Example 28 Example 29 Example 30 Example 31 Example 32 Polyimide resin (A) (A-1) 100 100 100 100 100 100 100 100 100 100 100 100 - - - 100 100 100 (A-2) - - - - - - - - - - - - 100 - - - - - (A-3) - - - - - - - - - - - - - 100 - - - - (A-4) - - - - - - - - - - - - - - 100 - - - Multifunctional (meth)acrylate compound (B) (B-1) - - - - - - - - - - - - - - - - - - (B-2) 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 70 70 60 (B-3) 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 - - 20 (B-4) 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 - - 10 Photosensitive agent (C) (C-1) 10 10 15 20 10 10 10 10 10 10 10 10 20 20 20 10 20 15 thermal free radical generator (E) (E-1) 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Crosslinking agent (F) (F-1) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 - (F-2) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 - Silane coupling agent (G) (G-1) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 (G-2) 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 Hardened catalyst (H) (H-1) 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 - Surfactant (I) (I-1) 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.04 0.04 0.04 Solvent (J) (J-1) 280 280 286 292 280 280 280 280 280 280 280 280 560 560 560 292 292 292 (J-2) 280 280 286 292 280 280 280 280 280 280 280 280 - - - 292 292 292 Polymerization inhibitor (D) (D-1) - - - - - - - - - - - - - - - - - - (D-2) - - - - - - - - - - - - 1 1 1 1 1 1 (D-3) 1.5 2 1 1 - - - - - - - - - - - - - - (D-4) - - - - 1 - - - - - - - - - - - - - (D-5) - - - - - 1 - - - - - - - - - - - - (D-6) - - - - - - 1 - - - - - - - - - - - (D-7) - - - - - - - 1 - - - - - - - - - - (D-8) - - - - - - - - 1 - - - - - - - - - (D-9) - - - - - - - - - 1 - - - - - - - - (D-10) - - - - - - - - - - 1 - - - - - - - (D-11) - - - - - - - - - - - 1 - - - - - - evaluate Focus margin [μm] 5 4 6 8 5 3 5 3 3 4 3 3 3 4 5 5 7 5 Elongation (%) 44 45 51 59 39 43 41 39 47 47 42 43 41 43 45 45 55 46

[0230] As shown in Table 1, the photosensitive resin compositions of Examples 1 to 32 have good elongation and large focal margin.

[0231] This application claims priority based on Japanese Patent Application No. 2021-161640, filed on September 30, 2021, the entire contents of which are incorporated herein by reference.

[0232] 1: Electronic devices 2: Through-electrode substrate 3: Semiconductor Packaging 5: Photosensitive resin varnish 21: Insulation layer 23: Semiconductor wafers 24: Lower wiring layer 25: Upper wiring layer 26: Solder bump 27: Structure with embedded wafers 31: Packaging substrate 32: Semiconductor wafers 33: Joint line 34: Sealing layer 35: Solder bump 202:Substrate 221: Through-wiring 222: Through-wiring 251: Organic insulating layer 252: Organic insulating layer 253: Wiring layer 254: Through-wiring 412: Mask 423: Opening 424: Opening 2510: Photosensitive resin layer 2520: Photosensitive resin layer 71:Substrate 73: Photosensitive resin film 73A: Resin film 75: Opening 710: Step difference 711:Cu redistribution 720: Light Mask S1: Chip Configuration Steps S2: Steps for forming the upper wiring layer S20: Preparation steps for the first resin film S21: First Exposure Step S22: First developing step S23: First Hardening Step S24: Wiring layer formation steps S25: Preparation steps for the second resin film S26: Second Exposure Step S27: Second Development Step S28: Second hardening step S29: Steps for forming a through-wiring system S3: Substrate peeling step S4: Steps for forming the lower wiring layer S5: Solder bump formation steps S6: Stacking Steps W: Diameter

Claims

1. A photosensitive resin composition comprising: a polyimide resin (A); a polyfunctional (meth)acrylate compound (B); a photosensitizer (C); and a polymerization inhibitor (D), wherein the polyimide resin (A) comprises a structure represented by the following general formula (a), wherein in general formula (a), X is a divalent organic group and Y is a tetravalent organic group, and the polymerization inhibitor (D) comprises one or more compounds selected from hindered phenolic compounds or N-oxygen compounds.

2. The photosensitive resin composition as claimed in claim 1, wherein, When the mole number of amide groups contained in the aforementioned polyamide resin (A) is set as IM, and the mole number of amide groups contained in the aforementioned polyamide resin (A) is set as AM, the amideization rate expressed by {IM / (IM+AM)}×100 (%) is 90% or higher.

3. The photosensitive resin composition as claimed in claim 1 or 2, wherein, The aforementioned polyimide resin (A) contains polyimide resin with fluorine atoms.

4. The photosensitive resin composition as claimed in claim 1 or 2, wherein, The aforementioned multifunctional (meth)acrylate compound (B) includes a 3- to 4-functional (meth)acrylate compound (B1).

5. The photosensitive resin composition as claimed in claim 1 or 2, wherein, The aforementioned multifunctional (meth)acrylate compound (B) includes (meth)acrylate compounds (B2) with more than 5 functions.

6. The photosensitive resin composition as claimed in claim 1 or 2, wherein, The content of the aforementioned polyfunctional (meth)acrylate compound (B) is 25 parts by mass or more and 100 parts by mass or less per 100 parts by mass of the aforementioned polyimide resin (A).

7. The photosensitive resin composition as claimed in claim 1 or 2, wherein, The aforementioned photosensitizer (C) contains a photoradical generator.

8. The photosensitive resin composition as claimed in claim 7, wherein, The aforementioned photoradical generators include oxime ester-based photoradical generators.

9. The photosensitive resin composition as claimed in claim 1 or 2, wherein, The content of the aforementioned photosensitizer (C) is 5 parts by mass or more and 30 parts by mass or less per 100 parts by mass of the aforementioned polyimide resin (A).

10. The photosensitive resin composition as claimed in claim 1 or 2, wherein, The content of the aforementioned polymerization inhibitor (D) is 0.1 parts by mass and less than 5 parts by mass relative to 100 parts by mass of the aforementioned polyimide resin (A).

11. The photosensitive resin composition as claimed in claim 1 or 2, wherein, The content of the aforementioned polymerization inhibitor (D) is more than 1 part by mass and less than 30 parts by mass relative to 100 parts by mass of the aforementioned photosensitizer (C).

12. The photosensitive resin composition of claim 1 or 2 further contains a thermal free radical generator (E).

13. The photosensitive resin composition of claim 1 or 2 further contains a crosslinking agent (F).

14. The photosensitive resin composition as claimed in claim 13, wherein, The aforementioned crosslinking agent (F) contains a compound having an epoxy group at one end of the molecule and a (meth)acrylic group at the other end.

15. The photosensitive resin composition of claim 1 or 2 further contains a silane coupling agent (G).

16. The photosensitive resin composition of claim 1 or 2, used to form an insulating layer in an electronic device.

17. The photosensitive resin composition of claim 1 or 2, used to form an insulating layer in an optical device.

18. A method for manufacturing an electronic device, comprising: The film forming step involves forming a photosensitive resin film on a substrate using the photosensitive resin composition of claim 1 or 2. The exposure step exposes the aforementioned photosensitive resin film; and the development step develops the exposed photosensitive resin film.

19. The method of manufacturing an electronic device as claimed in claim 18, which includes, after the aforementioned developing step, a thermosetting step of heating the previously exposed photosensitive resin film to harden it.

20. An electronic device comprising a hardened film of a photosensitive resin composition of claim 1 or 2.

21. An optical device comprising: a light-emitting element; wiring electrically connected to the light-emitting element; and an insulating film covering the wiring, wherein the insulating film is a hardened film of the photosensitive resin composition of claim 1 or 2.

22. The optical apparatus of claim 21, wherein, The aforementioned light-emitting element is a miniature LED.

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