Support unit, and apparatus for treating substrate with the same

Abstract

This invention provides an apparatus for processing a substrate, comprising: a housing; a support unit; a dielectric plate; a gas supply unit; and a plasma source. The plasma source includes an upper edge electrode and a lower edge electrode, each disposed above and below the edge region of the substrate. The support unit includes: a support plate; a lifting pin assembly for connecting the substrate between an external transmission unit and the support plate; and a pressure reduction unit for introducing negative pressure into the internal space. A vacuum hole is formed on the upper surface of the support plate, communicating with the internal space, and is used to adsorb and place the substrate. The lifting pin assembly includes: a base plate located within the internal space; a lifting pin protruding upwards from the base plate and supporting the bottom surface of the substrate; and a driver for raising and lowering the base plate. A through-hole is formed on the base plate, penetrating both the upper and lower portions, to provide negative pressure from the lower portion of the base plate to the upper portion.

Description

Support unit and apparatus for processing substrate using the support unit The present invention relates to a support unit and a substrate processing apparatus including the same, and more specifically, to an apparatus for processing a substrate using plasma. Plasma refers to an ionized gaseous state composed of ions, free radicals, and electrons, generated by extremely high temperatures, strong electric fields, or high-frequency electromagnetic fields (RF). Semiconductor device manufacturing processes include ashing or etching processes that utilize plasma to remove the film on a substrate. The ashing or etching process is performed by the collision or reaction between ions and free radical particles contained in the plasma and the film on the substrate. Plasma-based substrate treatment processes are performed in various ways. In methods that utilize plasma to process substrates, the bevel etching process generates plasma in the edge region of the substrate to remove the thin film on the substrate edge region. Since guiding the plasma to remove the thin film in the edge region of the substrate is crucial, it is important that the substrate is stably supported at the process position. To ensure the substrate is stably supported in the process position, the structural stability of the lifting pins that move the substrate up and down is essential. If the lifting pins lack a stable connection structure, the vibrations generated by the lifting pins during the substrate's up-and-down movement will be transmitted to the substrate, disrupting its balance. Furthermore, even when the substrate is balanced and supported by the support unit, it must still be stably fixed to the support unit. When the substrate is not fixed within the support unit and its position changes, it becomes difficult to effectively remove the film from the substrate's edge areas. [Technical Issues] One objective of this invention is to provide a support unit capable of stably fixing a substrate and a substrate processing apparatus including the same. In addition, one object of the present invention is to provide a support unit capable of stably raising and lowering a substrate and a substrate processing apparatus including the same. In addition, one object of the present invention is to provide a support unit that minimizes plasma-induced deformation and has high durability, and a substrate processing apparatus including the same. The problems to be solved by this invention are not limited to those described above; problems not mentioned are those that can be clearly understood by those skilled in the art from this specification and the accompanying drawings. [Technical Solution] This invention provides a substrate processing apparatus. The substrate processing apparatus may include: a housing having a processing space; a support unit supporting a substrate within the processing space; a dielectric plate configured to face the upper surface of the substrate supported by the support unit; a gas supply unit supplying process gas to an edge region of the substrate; and a plasma source exciting the process gas in the edge region of the substrate to generate plasma. The plasma source may include: an upper edge electrode disposed on the upper part of the edge region of the substrate supported by the support unit; and a lower edge electrode disposed on the lower part of the edge region of the substrate supported by the support unit. The support unit may include: a support plate on which the substrate is placed, having an internal space. The space includes: a lifting pin assembly, wherein the lifting pin assembly is connected to the substrate between the external transmission unit and the support plate; and a pressure reducing unit, wherein the pressure reducing unit provides negative pressure to the internal space; wherein a vacuum hole is formed on the upper surface of the support plate, the vacuum hole is connected to the internal space, and adsorbs the substrate placed on the support plate; the lifting pin assembly may include: a base plate, wherein the base plate is located in the internal space; a plurality of lifting pins, wherein the plurality of lifting pins protrude from the upper surface of the base plate and support the bottom surface of the substrate; and a driver, wherein the driver causes the base plate to move up and down within the internal space; wherein a through hole is formed on the base plate, the through hole is connected to the upper and lower parts, so as to provide the negative pressure provided in the lower region of the base plate in the internal space to the upper region of the base plate in the internal space. According to one embodiment, the aforementioned vacuum hole may include a pin hole for the aforementioned lifting pin to move up and down. According to one embodiment, the aforementioned vacuum hole may further include a through hole, which is spaced apart from the aforementioned pin hole when viewed from above. According to one embodiment, the aforementioned internal space, when viewed from above, can be formed in a shape corresponding to the aforementioned base plate. According to one embodiment, the aforementioned base plate may include: a central portion for connection to the aforementioned driver; and a plurality of body portions extending radially from the aforementioned central portion and formed in a bar shape; wherein the aforementioned lifting pin and the aforementioned through hole may be formed in the aforementioned body portions. According to one embodiment, the aforementioned lifting pin assembly may include: a lower bracket, which is coupled to the aforementioned base plate to fix the lower end of the aforementioned lifting pin; and an upper bracket, which is connected to the upper part of the aforementioned lower bracket to fix the aforementioned lower bracket and the aforementioned lifting pin. According to one embodiment, the aforementioned lower support and the aforementioned upper support may be made of a flexible material. According to one embodiment, the aforementioned lower support and the aforementioned upper support may be equipped with a conductive material. According to one embodiment, the aforementioned lower support and the aforementioned upper support may be equipped with an electrostatic dissipative material. According to one embodiment, the aforementioned lower support and the aforementioned upper support may be equipped with an anti-static material. According to one embodiment, the aforementioned lifting pin may be equipped with an insulating material. Additionally, the present invention provides a substrate processing apparatus. The substrate processing apparatus may include: a housing having a processing space; a support unit disposed within the housing to support the substrate; a gas supply unit supplying process gas to the processing space; and a plasma source generating plasma from the process gas; wherein the support unit may include: a support plate on which the substrate is placed, having an internal buffer space; a lifting pin assembly connecting the substrate to an external transmission unit; and a pressure reduction unit providing negative pressure to the buffer space; wherein, in the aforementioned… A vacuum hole may be formed on the top of the support plate, and the vacuum hole communicates with the buffer space to adsorb the substrate placed on the support plate; the lifting pin assembly may include: a base plate located in the buffer space; a plurality of lifting pins protruding from the top of the base plate to support the bottom surface of the substrate; and a driver that causes the base plate to move up and down within the buffer space; wherein, a through hole may be formed on the base plate, the through hole penetrating the upper and lower parts to provide the negative pressure provided in the lower region of the base plate in the buffer space to the upper region of the base plate in the buffer space. According to one embodiment, the aforementioned vacuum hole may include a pin hole for the aforementioned lifting pin to move up and down. According to one embodiment, the aforementioned vacuum hole may further include a through hole, which is spaced apart from the aforementioned pin hole when viewed from above. According to one embodiment, the aforementioned buffer space, when viewed from above, can be formed in a shape corresponding to the aforementioned base plate. According to one embodiment, the aforementioned base plate may include: a central portion for connection to the aforementioned driver; and a plurality of body portions extending radially from the aforementioned central portion and formed in a bar shape; wherein the aforementioned lifting pin and the aforementioned through hole may be formed in the aforementioned body portions. According to one embodiment, the aforementioned lifting pin assembly may include: a lower bracket, which is coupled to the aforementioned base plate to fix the lower end of the aforementioned lifting pin; and an upper bracket, which is connected to the upper part of the aforementioned lower bracket to fix the aforementioned lower bracket and the aforementioned lifting pin. According to one embodiment, the aforementioned lower support and the aforementioned upper support are equipped with materials that can suppress the generation of static electricity, and the aforementioned lifting pin is equipped with an insulating material. In addition, the present invention provides a support unit for supporting a substrate. The support unit may include: a support plate on which a substrate is placed to support an internal space; a lifting pin assembly that connects the substrate between an external transmission unit and the support plate; and a pressure reducing unit that applies negative pressure to the internal space; wherein a vacuum hole may be formed on the upper surface of the support plate, the vacuum hole communicating with the internal space to adsorb the substrate placed on the support plate; the lifting pin assembly may include: a base plate located in the internal space; a plurality of lifting pins protruding from the upper part of the base plate to support the bottom surface of the substrate; and a driver that causes the base plate to move up and down within the internal space; wherein a through hole may be formed on the base plate, the through hole penetrating the upper and lower parts to provide the negative pressure provided in the lower region of the base plate in the internal space to the upper region of the base plate in the internal space. According to one embodiment, the aforementioned vacuum hole may include: a pin hole for the aforementioned lifting pin to move up and down; and a through hole, which is spaced apart from the aforementioned pin hole when viewed from above. According to one embodiment, the aforementioned internal space, when viewed from above, can be formed in a shape corresponding to the aforementioned base plate. According to one embodiment, the aforementioned base plate may include: a central portion for connection to the aforementioned driver; and a plurality of body portions extending radially from the aforementioned central portion and formed in a bar shape, wherein the aforementioned lifting pin and the aforementioned through hole may be formed in the aforementioned body portions. According to one embodiment, the aforementioned lifting pin assembly may include: a lower bracket, which is coupled to the aforementioned base plate to fix the lower end of the aforementioned lifting pin; and an upper bracket, which is connected to the upper part of the aforementioned lower bracket to fix the aforementioned lower bracket and the aforementioned lifting pin. According to one embodiment, the aforementioned lower support and upper support are made of materials that suppress static electricity generation, and the aforementioned lifting pin is made of an insulating material. [Effects of the Invention] According to one embodiment of the present invention, substrates can be processed efficiently. In addition, according to one embodiment of the present invention, the substrate can be stably fixed. In addition, according to one embodiment of the present invention, the substrate can be stably raised and lowered. In addition, according to one embodiment of the present invention, deformation of the lifting pin due to plasma can be minimized. The effects of the present invention are not limited to those described above. Effects not mentioned are those that can be clearly understood by those skilled in the art from this specification and drawings. Embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. The embodiments of the present invention may be modified in various ways and should not be construed as limiting the scope of the invention to the embodiments described below. These embodiments are provided to provide a more complete description of the invention to those skilled in the art. Therefore, the shapes of the constituent elements in the drawings are exaggerated for emphasis and clarity. The embodiments of the present invention will be described in detail below with reference to Figures 1 to 9. Figure 1 is a schematic diagram illustrating a substrate processing apparatus according to an embodiment of the present invention. Referring to Figure 1, the substrate processing apparatus 1 includes an Equipment Front End Module (EFEM) 20 and a processing module 30. The Equipment Front End Module 20 and the processing module 30 are arranged along one direction. The Equipment Front End Module 20 and the processing module 30 are arranged along a first direction 11. The device front-end module 20 has a load port 10 and a transfer frame 21. The load port 10 is located in front of the device front-end module 20. For example, the load port 10 and the device front-end module 20 may be arranged along a first direction 11. The load port 10 has a plurality of support portions 6. Each support portion 6 may be arranged in a row along a second direction 12 perpendicular to the first direction 11 in a plane. Each support portion 6 holds a carrier frame 4 (e.g., a wafer cassette, FOUP, etc.) for storing the substrate W to be supplied in the process and the substrate W after the process is completed. The carrier frame 4 stores the substrate W to be supplied to the process and the substrate W after the process is completed. A transfer frame 21 is disposed between the loading port 10 and the processing module 30. A first transfer robot 25 is disposed inside the transfer frame 21. The first transfer robot 25 transfers substrate W between the loading port 10 and the processing module 30. The first transfer robot 25 moves along a transfer track 27 provided in a second direction 12 to transfer substrate W between the carrier 4 and the processing module 30. The processing module 30 includes a loading gate chamber 40, a transfer chamber 50, and a process chamber 60. The processing module 30 can process the substrate W transferred from the front-end module 20 of the equipment. The loading gate chamber 40 is configured adjacent to the transfer frame 21. As an example, the loading gate chamber 40 may be configured between the transfer chamber 50 and the device front-end module 20. The loading gate chamber 40 provides space for the substrate W to be supplied to the process before being transferred to the process chamber 60, or for the substrate W to be processed before being transferred to the device front-end module 20. The transfer chamber 50 transfers the substrate W. As an example, the transfer chamber 50 can transfer the substrate W between the loading gate chamber 40 and the process chamber 60. The transfer chamber 50 is configured adjacent to the loading gate chamber 40. The transfer chamber 50 may have a polygonal body when viewed from above. For example, the transfer chamber 50 may have a pentagonal body when viewed from above. The loading gate chamber 40 and multiple process chambers 60 may be arranged along the outer periphery of the body. As an example, as shown in FIG1, when the transfer chamber 50 has a pentagonal body, loading gate chambers 40 may be arranged on the sidewalls adjacent to the front-end module 20 of the equipment, and process chambers 60 may be continuously arranged on the remaining sidewalls. However, unlike the above, the shape of the transfer chamber 50 is not limited to this and can be deformed into various forms depending on the required process module. Channels (not shown) for the substrate W to enter and exit may be formed on each side wall of the main body. The channels (not shown) connect the loading gate chamber 40 to the transfer chamber 50 or the process chamber 60. Each channel (not shown) is equipped with a door (not shown), which opens and closes the channel (not shown) to seal the interior. Inside the transfer chamber 50, a second transfer robot 53 is configured to transfer substrates W between the loading gate chamber 40 and the process chamber 60. The second transfer robot 53 transfers unprocessed substrates W waiting in the loading gate chamber 40 to the process chamber 60, or transfers processed substrates W from the process chamber 60 to the loading gate chamber 40. Furthermore, substrates W are transferred between the process chambers 60 to sequentially supply substrates W to multiple process chambers 60. Process chamber 60 may be configured adjacent to transfer chamber 50. Process chamber 60 may be configured along the outer periphery of transfer chamber 50. Multiple process chambers 60 may be provided. Processing of substrate W may be performed in each process chamber 60. Process chamber 60 receives substrate W from second transfer robot 53, performs processing, and hands over the processed substrate W to second transfer robot 53. The processing performed in each process chamber 60 may be different from each other. The following describes in detail the process chamber 60 in which the plasma processing is performed. For example, the process chamber 60 performing the plasma processing can etch or ashing a film on the substrate W. The film can be of various types, such as polycrystalline silicon film, oxide film, and silicon nitride film. Depending on the circumstances, the film can be a naturally occurring oxide film or an oxide film produced through a chemical reaction. Depending on the circumstances, the film can be a by-product generated during the processing of the substrate W. Depending on the circumstances, the film can be impurities attached to and / or remaining on the substrate W. Furthermore, the substrate processing apparatus 1 described below is exemplified by a process chamber 60 configured to perform a plasma processing process on the edge region of the substrate W in the process chamber 60. However, it is not limited to this, and the process chamber 60 of the substrate processing apparatus 1 described below can be applied in the same or similar way to various process chambers 60 for processing the substrate W. Figure 2 is a schematic diagram illustrating an embodiment of the process chamber of Figure 1 of the present invention. Referring to Figure 2, the process chamber 60 can perform a plasma process on a substrate W. For example, the process chamber 60 can supply process gases and generate plasma from the supplied process gases to process the substrate W. The process chamber 60 can supply process gases and generate plasma from the supplied process gases to process the edge regions of the substrate W. Hereinafter, a bevel etching apparatus for performing etching processing on the edge regions of the substrate W in the process chamber 60 of an embodiment of the present invention will be described as an example. The process chamber 60 may include a housing 100, a support unit 200, a dielectric plate unit 300, an upper electrode unit 400, a temperature regulation unit 500, and a gas supply unit 600. The housing 100 has a processing space 102 inside for processing the substrate W. An opening (104) may be formed on one side wall of the housing 100. The substrate W can be loaded into or unloaded from the processing space 102 inside the housing 100 through the opening 104. The opening 104 can be opened or closed by means of an opening and closing member such as a door (not shown). If the opening 104 is closed by a door (not shown), the processing space 102 can be isolated from the outside. In addition, the atmosphere of the processing space 102 can be formed into a low pressure close to a vacuum after being isolated from the outside. The housing 100 may be made of metal. The surface of the housing 100 may be coated with an insulating material. The housing 100 may be grounded. According to one embodiment, the housing 100 may be a vacuum chamber. For example, an exhaust port 106 may be formed on the bottom surface of the housing 100. The plasma P generated in the processing space 102 and / or the gases G1, G2 supplied to the processing space 102 may be discharged to the outside of the housing 100 through the exhaust port 106. In addition, process byproducts generated during the processing of the substrate W using the plasma P may be discharged to the outside of the housing 100 through the exhaust port 106. The exhaust port 106 may be connected to an exhaust line 108. The exhaust line 108 may be connected to a negative pressure member (not shown) that provides negative pressure. The negative pressure member (not shown) may provide negative pressure to the processing space 102 through the exhaust line 108 and the exhaust port 106. The support unit 200 supports the substrate W in the processing space 102. The support unit 200 may include a support plate 210, a power supply component 220, an insulating ring 230, a lower edge electrode 240, a lifting pin assembly 250, a pressure reducing unit 260, and a drive component 270. The support plate 210 provides a mounting surface for placing the substrate W in the processing space 102. A support surface for supporting the substrate W can be formed on the top of the support plate 210. The support plate 210 can be generally circular when viewed from above. According to one example, the support plate 210 can have a diameter relatively smaller than that of the substrate W when viewed from above. Therefore, the central region of the substrate W supported by the support plate 210 can be placed on the support surface of the support plate 210, and the edge region of the substrate W can be separated from the support surface of the support plate 210. An internal space 211 may be formed inside the support plate 210. A lifting pin assembly 250 (described later) may be disposed within the internal space 211. The shape of the internal space 211, when viewed from above, may correspond to the shape of the base plate 252 (described later). Furthermore, a pressure-reducing unit 260 (described later) may be connected to the internal space 211. A vacuum hole H may be formed on the support plate 210. The vacuum hole H functions as a channel to transfer the negative pressure from the pressure reduction unit 260 (described later) to the substrate W. As an example, the vacuum hole H can transfer the negative pressure from the pressure reduction unit 260 to the underside of the substrate W, thereby adsorbing and fixing the substrate W to the support plate 210. The vacuum hole H may be formed from the top of the support plate 210 to the internal space 211. The vacuum hole H is formed so as not to overlap with the cooling flow path 212 (described later) and the heating device (not shown) located inside the support plate 210. The vacuum hole H may include a pin hole H1 and a through hole H2. The pin hole H1 functions as a channel for the vertical movement of the lifting pin 255 (described later). When viewed from above, the diameter of the pin hole H1 may be larger than the diameter of the lifting pin 255. The through-hole H2 functions as a channel to transmit the negative pressure entering the internal space 211 to the substrate W. The through-hole H2 is formed at a location that does not overlap with the pin hole H1. For example, when viewed from above, the through-hole H2 can be positioned separately from the pin hole H1. Figure 2 shows the through-hole H2 formed further inside than the pin hole H1, but it is not limited to this. The through-hole H2 can also be formed further outside than the pin hole H1. A heating device (not shown) may be provided inside the support plate 210. The heating device (not shown) can heat the support plate 210. For example, the heating device may be a heater. According to one example, the heater may be formed in a coil shape inside the support plate 210. However, it is not limited to this, and the arrangement and shape of the heaters can be varied. A cooling flow path 212 may be formed inside the support plate 210. The cooling flow path 212 can cool the support plate 210. The cooling flow path 212 can cool the support plate 210, thereby regulating the temperature of the substrate W supported by the support plate 210. The cooling flow path 212 may be connected to a fluid supply line 214 and a fluid discharge line 216. The fluid supply line 214 may be connected to a fluid supply source 218. The fluid supply source 218 may store cooling fluid. In addition, the fluid supply source 218 may supply cooling fluid to the fluid supply line 214. The cooling fluid stored and / or supplied by the fluid supply source 218 may be a coolant. Depending on the situation, the cooling fluid stored and / or supplied by the fluid supply source 218 may be a cooling gas. The fluid discharge line 216 can discharge the cooling fluid supplied to the cooling flow path 212 to the outside of the housing 100. The shape of the cooling flow path 212 formed on the support plate 210 is not limited to the shape shown in FIG2, and can be configured in various shapes. In addition, the configuration for cooling the support plate 210 is not limited to supplying cooling fluid, and can also be configured in various ways (such as cooling plate, etc.) to cool the support plate 210. Power supply component 220 can supply high-frequency power to support plate 210. Power supply component 220, lower edge electrode 240 (described later), and upper edge electrode 420 (described later) can function as plasma sources, exciting process gases to generate plasma in the edge region of substrate W. Power supply component 220 can supply RF power to support plate 210. Power supply component 220 may include power supply 222, adapter 224, and power line 226. Power supply 222 may be a bias power supply. Alternatively, power supply 222 may be an RF power supply. Power supply 222 can be connected to support plate 210 via power line 226. Adapter 224 may be provided on power line 226 to perform impedance matching. The insulating ring 230 may be annular when viewed from above. When viewed from above, the insulating ring 230 may be configured to surround the outer periphery of the support plate 210. In one example, the insulating ring 230 may be made of an insulating material. The lower edge electrode 240 can function as a plasma source. For example, the lower edge electrode 240 can be a plasma source for exciting process gases supplied to the edge region of the substrate W to generate plasma. The lower edge electrode 240, when viewed from above, can be configured in a ring shape. The lower edge electrode 240, when viewed from above, can be configured to surround the outer periphery of the insulating ring 230. The lower edge electrode 240 can be grounded. According to one embodiment of the present invention, the lower edge electrode 240 can be disposed at the lower part of the edge region of the substrate W. When viewed from above, the lower edge electrode 240 can be disposed at the edge region of the substrate W supported by the support plate 210. When viewed from above, the edge region of the substrate W can be a region overlapping with the outer periphery of the substrate W. Depending on the situation, when viewed from above, the edge region of the substrate W can be a region that does not overlap with the outer periphery of the substrate W. When viewed from the front, the lower edge electrode 240 can be located at the lower part of the substrate W. Figure 3 is a simplified view of the base plate of Figure 2 from above. Figures 4 and 5 are simplified perspective views of the fixing members of Figure 2. Figure 6 is a simplified view of the lifting pin assembly of Figure 2 from the front. A lifting pin assembly 250 according to an embodiment of the present invention will be described in detail below with reference to Figures 2 to 6. The lifting pin assembly 250 enables the substrate W to be raised and lowered. The lifting pin assembly 250 facilitates the transfer of the substrate W between the second transfer robot 53 and the support plate 210. The lifting pin assembly 250 can be configured within the internal space 211. The lifting pin assembly 250 may include a base plate 252, a lifting pin 255, a fixing member 256, and a driving member 259. A base plate 252 may be located within the interior space 211. When viewed from above, the base plate 252 is formed in a shape corresponding to the interior space 211. The outer peripheral surface of the base plate 252 may be spaced apart from the inner surface of the interior space 211. As an example, the outer peripheral surface of the base plate 252 may be spaced apart from the inner surface of the interior space 211 to form a small space between them. The base plate 252 may move vertically within the interior space 211. For example, the base plate 252 may move vertically within the interior space 211 by means of a drive member 259 described later. Referring to Figure 3, the base plate 252 may be composed of a central portion 252a and a body portion 252b. The central portion 252a may be connected to the drive member 259 described later. The body portion 252b may have a shape extending radially from the central portion 252a. Multiple body portions 252b may be provided. For example, three body portions 252b may be provided. Each body portion 252b may extend from the central portion 252a in different directions. For example, the virtual straight lines connecting the ends of the various body portions 252b may roughly form a triangular shape. The body portion 252b may be formed in a roughly bar-like shape. A through hole 253 and a connecting hole 254 may be formed on the base plate 252. For example, a through hole 253 and a connecting hole 254 may be formed on the body portion 252b. The through hole 253 and the connecting hole 254 are formed in positions that do not overlap. The through hole 253 can extend from the upper end to the lower end of the body portion 252b. The through hole 253 functions as a channel for the movement of negative pressure accessed in the internal space 211. The through hole 253 can provide the negative pressure supplied to the lower region of the base plate 252 in the internal space 211, which is provided with negative pressure by the pressure reducing unit 260 described later, to the upper region of the base plate 252. The connecting hole 254 can be formed by a hole extending from the upper end to the lower end of the body portion 252b. The lifting pin 255 (described later) is connected through the connecting hole 254. For example, the lower support 257 (described later) can be connected through the connecting hole 254. In the above embodiment, the case where the connecting hole 254 extends vertically through the body portion 252b is described as an example, but it is not limited to this. For example, the connecting hole 254 may not extend vertically through the body portion 252b, but may instead be provided as a groove formed by a predetermined downward recess from the upper end of the body portion 252b. The lifting pin 255 supports the bottom surface of the base plate W. The lifting pin 255 protrudes upward from the base plate 252. Multiple lifting pins 255 can be provided. For example, three lifting pins 255 can be provided. Each lifting pin 255 can be attached to the body portion 252b. The lifting pin 255 can be fixedly attached to the lower bracket 257 and the upper bracket 258 (described later) to be attached to the base plate 252. Multiple lifting pins 255 can share the center of the central portion 252a and are configured to have the same radius. The lifting pin 255 can move up and down along the pin hole H1 formed on the support plate 210. The lifting pin 255 can be made of an insulating material. Referring to Figures 4 to 6, the fixing member 256 connects the base plate 252 and the lifting pin 255. The fixing member 256 is made of an elastic material. As an example, the fixing member 256 may be made of a plastic resin such as PEEK (Polyether ether ketone). Alternatively, the fixing member 256 may be made of a conductive material. As an example, the fixing member 256 may have a conductivity of 0~10^5 Ω / cm. 2 The material is equipped with a range of conductive materials. Additionally, the fixing member 256 can be equipped with a static dissipative material. For example, the fixing member 256 can have a conductivity of 10^6 to 10^9 Ω / cm. 2 The fastener is equipped with a range of electrostatic dissipative materials. Additionally, the fastening member 256 can be equipped with an antistatic material. For example, the fastening member 256 can have a strength of 10^10~10^13 Ω / cm. 2 A range of antistatic materials are used. The fixing member 256 may include a lower bracket 257 and an upper bracket 258. The lower bracket 257 may be coupled to the base plate 252 to fix the lower end of the lifting pin 255. The lower bracket 257 may be composed of a base plate coupling portion 257a, a lower end coupling portion 257b, and a first fixing portion 257c. The base plate joint 257a, the lower end joint 257b, and the first fixing part 257c can be integrally formed. The base plate joint 257a can be engaged with the connecting hole 254. The base plate joint 257a is engaged with the connecting hole 254, and the fixing member 256 is fixedly engaged with the base plate 252. The lower connecting portion 257b is located above the base plate connecting portion 257a. When the lower support 257 is fixed to the base plate 252, the lower surface of the lower connecting portion 257b can make surface contact with the upper surface of the base plate 252. Therefore, the lower connecting portion 257b can support the lower support 257 from the base plate 252. The lower connecting portion 257b can be connected to the upper connecting portion 258a, which will be described later. By connecting the lower connecting portion 257b and the upper connecting portion 258a, the lower support 257 and the upper support 258a can be fixedly connected to each other. The first fixing part 257c is located above the lower end connecting part 257b. The first fixing part 257c protrudes from the lower end connecting part 257b. The first fixing part 257c fixes and supports the lower end of the lifting pin 255. The first fixing part 257c is formed to surround the outer peripheral surface of the lifting pin 255. As an example, the first fixing part 257c can be formed in a hollow cylindrical shape. By inserting the lifting pin 255 into the hollow of the first fixing part 257c, the first fixing part 257c can fix the lifting pin 255. The upper bracket 258 is combined with the lower bracket 257 and the lifting pin 255. The combination of the upper bracket 258 and the lower bracket 257 can re-fix the lifting pin 255. The upper bracket 258 can be composed of an upper connecting part 258a and a second fixing part 258b. The upper connecting part 258a and the second fixing part 258b can be integrally formed. The upper connecting portion 258a can be connected to the lower connecting portion 257b. If the upper connecting portion 258a and the lower connecting portion 257b are connected to each other, the upper connecting portion 258a is located above the lower connecting portion 257b. Therefore, the upper bracket 258 can be fixedly connected to the lower bracket 257. The second fixing part 258b is located above the upper joint 258a. The second fixing part 258b protrudes from the upper joint 258a. The second fixing part 258b fixes the lifting pin 255. The second fixing part 258b provides fixed support to the upper part of the lower end of the lifting pin 255, which is supported by the first fixing part 257c. As an example, the second fixing part 258b can surround the first fixing part 257c, forming a shape that surrounds the lifting pin 255 protruding upwards from the first fixing part 257c. Therefore, the second fixing part 258b can provide fixing force to both the first fixing part 257c and the lifting pin 255. Thus, the upper bracket 258 can provide a restraining force on the lifting pin 255 while fixing the lower bracket 257. The driving member 259 provides a driving force to the base plate 252. The driving member 259 can move the base plate 252 up and down within the internal space 211. The driving member 259 can move the base plate 252 from the upper end to the lower end of the internal space 211. In addition, the driving member 259 can move the base plate 252 from the lower end to the upper end of the internal space 211. The drive member 259 may be located within the internal space 211. However, it is not limited to this; the drive member 259 may also be located outside the support unit 200. As an example, the drive member 259 may be equipped with a motor. However, it is not limited to this; the drive member 259 may be modified to be equipped with various known devices for providing driving force. In addition, a bellows that provides restoring force may be installed on the drive member 259. Referring again to Figure 2, the pressure reducing unit 260 introduces negative pressure into the internal space 211. The pressure reducing unit 260 provides negative pressure to the substrate W. The pressure reducing unit 260 may include a pressure reducing pump 262 and a pressure reducing line 264. The pressure reducing pump 262 transmits negative pressure to the pressure reducing line 264. The pressure reducing pump 262 may be a pump that provides negative pressure. However, it is not limited to this; the pressure reducing pump 262 may be modified in various ways to provide negative pressure using known devices. One end of the pressure reducing line 264 may be connected to the pressure reducing pump 262, and the other end of the pressure reducing line 264 may be connected to the internal space 211. For example, the other end of the pressure reducing line 264 may be connected to the bottom surface of the internal space 211. The lifting member 270 can raise and lower the support plate 210. The lifting member 270 may include a driver 272 and a shaft 274. The driver 272 can raise and lower the support plate 210 in the vertical direction via the shaft 274. The shaft 274 may be coupled to the support plate 210. In addition, the shaft 274 may be connected to the driver 272. As the driving member 270 raises and lowers the support plate 210, the spacing between the upper surface of the substrate W supported by the support plate 210 and the lower surface of the dielectric plate 320 (described later) can be adjusted. Figure 7 is a simplified diagram showing how the pressure-reducing unit of Figure 2 introduces negative pressure into the internal space. Figure 8 is a simplified diagram showing how the pin hole expands when the pressure-reducing unit of Figure 7 introduces negative pressure into the internal space. The negative pressure flow mechanism for adsorbing and fixing the substrate in the support unit of an embodiment of the present invention will be described in detail below with reference to Figures 7 and 8. The lifting pin assembly 250 receives the base plate W from the second transfer robot 53 and transfers the base plate W to the support plate 210. At this time, the lifting pin 255 can stably perform lifting and lowering movements with the help of the fixing member 256. Specifically, the lower support 257 is stably connected to the base plate 252, which undergoes lifting and lowering movements, and simultaneously and stably supports the lower end of the lifting pin 255. This stability is ensured by the vertical movement of the base plate 252. Furthermore, the upper support 258 fixes the lower support 257, which is connected to the base plate 252, and simultaneously again supports the lifting pin 255, preventing it from wobbling due to the vertical movement of the base plate 252. Therefore, the stability of the lifting pin assembly 250 is improved, minimizing vibration of the substrate W supported by the lifting pin 255. Thus, by stably supporting the substrate W with the support plate 210 to maintain a horizontal position, plasma processing of the edge region of the substrate W (described later) can be performed smoothly. Furthermore, as shown in Figures 7 and 8, if the substrate W is suitably placed on the support plate 210 by means of the lifting pin 255, the substrate W is vacuum-adsorbed on the upper part of the support plate 210 by means of the pressure reduction unit 260. For example, the pressure reduction unit 260 provides negative pressure to the lower region of the internal space 211. The negative pressure in the lower region of the internal space 211 is transmitted to the upper region of the internal space 211 through the through hole 253 formed in the base plate 252. The negative pressure transmitted to the upper region of the internal space 211 is transmitted to the lower part of the substrate W along the pin hole H1 and the through hole H2. The negative pressure in the lower part of the substrate W allows the substrate W to be stably adsorbed and fixed to the support plate 210. When the substrate W is not properly secured to the support plate 210 and wobbles horizontally, it is difficult to perform proper processing on the substrate W. In particular, as described later, when performing plasma processing on the edge region of the substrate W, the substrate W needs to be supported in a precise processing position. For example, when the substrate W breaks the horizontal level required for the processing position on the support plate 210, it is impossible to perform plasma processing on the edge region of the substrate W uniformly. Therefore, according to an embodiment of the present invention, the engagement stability of the lifting pin assembly 250 can be improved so that the substrate W can be raised and lowered stably. The substrate W can be stably supported relative to the through hole 253 formed in the base plate 252 and the pin hole H1 and through hole H2 formed in the support plate 210, so as to maintain the appropriate process position of the substrate. Furthermore, as described later, according to an embodiment of the present invention, the substrate W possesses electrical characteristics due to the formation of plasma P in the edge region of the substrate W. Therefore, if the lifting pin 255 in contact with the substrate W is electrically connected, an electric arc will occur in the lifting pin 255. Therefore, according to an embodiment of the present invention, the lifting pin 255 may be formed of an insulating material to minimize the risk of arcing in the lifting pin assembly 250. Furthermore, the lifting pin 255 and the fixing member 256 that connects the base plate 252 and the lifting pin 255 are made of a material capable of elastic deformation, thus stably supporting the lifting pin 255 within the elastic range of the fixing member 256. Additionally, the fixing member 256 is made of a material that suppresses static electricity (e.g., a conductive material, a static dissipative material, or an antistatic material), so that when a charge exists around the lifting pin 255, the fixing member 256 can provide an electrostatic grounding effect. This improves the structural stability and durability of the lifting pin assembly 250. Referring again to Figure 2, the dielectric plate unit 300 may include a dielectric plate 320 and a first base 340. The lower surface of the dielectric plate 320 may be disposed facing the upper surface of the support plate 210. The dielectric plate 320 may be generally circular when viewed from above. The upper surface of the dielectric plate 320 may be staggered so that the height of the central region is relatively higher than the height of the edge regions. The lower surface of the dielectric plate 320 may be generally flat. In the lower surface of the dielectric plate 320, the edge regions may be staggered so that their height is relatively higher than the central region. In the lower surface of the dielectric plate 320, plasma P, described later, may enter the staggered regions. Therefore, the processing efficiency of the edge regions of the substrate W can be improved. The dielectric plate 320 is located in the processing space 102. The dielectric plate 320 is disposed on the upper part of the support unit 200. The dielectric plate 320 is configured to face the upper surface of the substrate W supported by the support unit 200 in the processing space 102. As an example, the dielectric plate 320 may be configured to face the upper surface of the substrate W supported by the support plate 210 in the processing space 102. The dielectric plate 320 may be made of ceramic. A gas flow path connected to the first gas supply section 620 of the gas supply unit 600 (described later) may be formed on the dielectric plate 320. The exhaust end of the gas flow path may be configured to supply the first gas G1 supplied by the first gas supply section 620 to the central region of the substrate W supported by the support unit 200. For example, the exhaust end of the gas flow path may be configured to supply the first gas G1 to the central region of the substrate W supported by the support unit 200. The first base 340 may be disposed between the dielectric plate 320 and the temperature regulating plate 520 (described later). The first base 340 may be coupled to the temperature regulating plate 520, and the dielectric plate 320 may be coupled to the first base 340. Therefore, the dielectric plate 320 can be coupled to the temperature regulating plate 520 through the first base 340. The diameter of the first base 340 may gradually increase from top to bottom. The diameter of the upper part of the first base 340 may be smaller than the diameter of the lower part of the dielectric plate 320. The upper part of the first base 340 may have a flat shape. The lower part of the first base 340 may have a staggered shape. For example, the lower part of the edge region of the first base 340 may be staggered so that its height is lower than the lower part of the central region. The lower part of the first base 340 and the upper part of the dielectric plate 320 may have shapes that can be combined with each other. For example, the central region of the dielectric plate 320 may be inserted into the central region of the first base 340. The first base 340 may be made of metal. As an example, the first base 340 may be made of aluminum. The position of the dielectric plate 320 may be fixed by the first base 340. The upper electrode unit 400 can function as a plasma source. For example, the upper electrode unit 400 can be a plasma source for exciting process gases supplied to the edge region of the substrate W to generate plasma. The upper electrode unit 400 may include an upper edge electrode 420 and a second base 440. The upper edge electrode 420 may be grounded. When viewed from above, the upper edge electrode 420 may have a shape surrounding the dielectric plate 320. When viewed from above, the upper edge electrode 420 may have a ring shape. The upper edge electrode 420 may be spaced apart from the dielectric plate 320. By being spaced apart from the dielectric plate 320, a separation space can be formed. This separation space can form part of a channel for the flow of the second gas G2 supplied to the second gas supply unit 640 (described later). The exhaust end of the gas channel can be configured to supply the second gas G2 to the edge region of the substrate W supported by the support unit 200. For example, the exhaust end of the gas channel can be configured to supply the second gas G2 to the edge region of the substrate W supported by the support unit 200. The upper edge electrode 420 may be grounded. According to one embodiment of the present invention, the upper edge electrode 420 may be disposed on the upper part of the edge region of the substrate W. When viewed from above, the upper edge electrode 420 may be disposed on the edge region of the substrate W supported by the support plate 210. When viewed from above, the edge region of the substrate W may be a region that overlaps with the outer periphery of the substrate W. Depending on the situation, when viewed from above, the edge region of the substrate W may be a region that does not overlap with the outer periphery of the substrate W. When viewed from the front, the upper edge electrode 420 may be disposed on the upper part of the substrate W. The second base 440 can be disposed above the support plate 210. The second base 440 can be disposed above the substrate W supported by the support plate 210. The second base 440 can fix the position of the upper edge electrode 420. The second base 440 can be disposed between the upper edge electrode 420 and the temperature regulating plate 520 (described later). The second base 440 can be coupled to the temperature regulating plate 520, and the upper edge electrode 420 can be coupled to the second base 440. Therefore, the upper edge electrode 420 can be coupled to the temperature regulating plate 520 via the second base 440. The second base 440 may be annular when viewed from above. The top and bottom surfaces of the second base 440 may be flat. When viewed from above, the second base 440 may have a shape that surrounds the first base 340. The inner diameter of the second base 440 may gradually increase from top to bottom. The second base 440 may be spaced apart from the first base 340. The second base 440 may be spaced apart from the first base 340 to form a spacer space. The spacer space may form part of a gas passage for the flow of the second gas G2 supplied to the second gas supply unit 640 (described later). The second base 440 may be made of metal. As an example, the second base 440 may be made of aluminum. The temperature control unit 500 may include a temperature control plate 520 and a fluid supply module (not shown). The fluid supply module (not shown) may supply cooling fluid to and discharge from a flow path 522 formed on the temperature control plate 520. The temperature regulating plate 520 can be combined with the dielectric plate unit 300 and the upper electrode unit 400 respectively. The temperature regulating plate 520 is located inside the housing 100. The temperature regulating plate 520 can be disposed on the top of the housing 100. The temperature regulating plate 520 prevents the temperature of the first base 340 and the second base 440 from rising excessively. A flow path 522 for the cooling fluid CF can be formed on the temperature regulating plate 520. The cooling fluid CF can be a coolant. Depending on the situation, the cooling fluid CF can be a cooling gas. According to one embodiment of the present invention, a first base 340 is disposed between the dielectric plate 320 and the temperature regulating plate 520. The first base 340 may be made of a different material than the dielectric plate 320, or it may be made of the same material as the temperature regulating plate 520. That is, the thermal expansion rate of the first base 340 may be relatively closer to the thermal expansion rate of the temperature regulating plate 520 than that of the dielectric plate 320. Therefore, by disposing the first base 340 between the dielectric plate 320 and the temperature regulating plate 520, the occurrence of misalignment between the temperature regulating plate 520 and the dielectric plate 320 can be minimized by utilizing the heat generated by the temperature regulating plate 520. This is because the first base 340, which is directly connected to the temperature regulating plate 520, is made of a similar material to the temperature regulating plate 520. Similar to the foregoing, according to one embodiment of the present invention, a second base 440 is disposed between the upper edge electrode 420 and the temperature regulating plate 520. The second base 440 may be made of a different material than the upper edge electrode 420, or it may be made of the same or similar material as the temperature regulating plate 520. That is, the thermal expansion rate of the second base 440 is relatively closer to the thermal expansion rate of the temperature regulating plate 520 than that of the upper edge electrode 420. Therefore, since the second base 440 is disposed between the upper edge electrode 420 and the temperature regulating plate 520, the possibility of misalignment between the temperature regulating plate 520 and the upper edge electrode 420 can be minimized by means of the heat or cold generated by the temperature regulating plate 520. This is because the second base 440, which is directly connected to the temperature regulating plate 520, is made of a similar material to the temperature regulating plate 520. The gas supply unit 600 supplies gas to the processing space 102. The gas supply unit 600 can supply a first gas G1 and a second gas G2 to the processing space 102. The gas supply unit 600 may include a first gas supply section 620 and a second gas supply section 640. The first gas supply unit 620 supplies a first gas G1 to the processing space 102. The first gas G1 may be an inactive gas such as nitrogen. The first gas supply unit 620 may supply the first gas G1 to the central region of the substrate W supported by the support plate 210. The first gas supply unit 620 may include a first gas supply source 622, a first gas supply line 624, and a first valve 626. The first gas supply source 622 can store the first gas G1. Additionally, the first gas supply source 622 can supply the first gas G1 via a first gas supply line 624. The first gas supply line 624 can be connected to a flow path formed on the dielectric plate 320. A first valve 626 can be disposed on the first gas supply line 624. The first valve 626 can be equipped with an open / close valve. Depending on the situation, the first valve 626 can be equipped with a flow regulating valve. The first gas G1 supplied by the first gas supply source 622 can be supplied to the upper central region of the substrate W via the flow path formed on the dielectric plate 320. The second gas supply unit 640 can supply a second gas G2 to the processing space 102. The second gas G2 can be a process gas that is excited into a plasma state. The second gas supply unit 640 can supply the second gas G2 to the edge region of the substrate W through a gas channel, which is formed by a dielectric plate 320, a first base 340, an upper edge electrode 420, and a second base 440 disposed on the upper edge region of the substrate W supported by the support plate 210 and spaced apart from each other. The second gas supply unit 640 may include a second gas supply source 642, a second gas supply line 644, and a second valve 646. The second gas supply source 642 can store the second gas G2. Additionally, the second gas supply source 642 can supply the second gas G2 to the second gas supply line 644. The second gas supply line 644 can supply the second gas G2 to a partitioned space that functions as a gas passage. A second valve 646 can be provided on the second gas supply line 644. The second valve 646 can be an on / off valve. Depending on the situation, the second valve 646 can be equipped with a flow regulating valve. The second gas G2 supplied by the second gas supply source 642 can be supplied to the upper edge region of the substrate W via the gas passage. The controller 900 can control the substrate processing equipment 1. The controller 900 can control the substrate processing equipment 1 to perform the following plasma processing process. For example, the controller 900 can control the support unit 200, the temperature regulating plate 520, and the gas supply unit 600. For example, when gas is supplied from the first gas supply unit 620 and / or the second gas supply unit 640, the controller 900 can control the support unit 200 to supply power to the support unit 200, thereby generating plasma P in the edge region of the substrate W supported by the support plate 210. The controller 900 may include: a process controller, which is composed of a microprocessor (computer) that implements control of the substrate processing equipment 1000; a user interface, which is composed of a keyboard for the operator to perform command input operations for managing the substrate processing equipment 1, or a display device that visualizes the operation status of the substrate processing equipment 1; and a memory unit, which stores control programs required for running the processing in the substrate processing equipment 1 under the control of the process controller, or stores programs required for each component to execute processing based on various data and processing conditions, i.e., processing recipes. Furthermore, the user interface and the memory unit may be connected to the process controller. The processing recipes may be stored in a memory medium in the memory unit, which may be a hard disk, a removable disk such as a CD-ROM (Read-Only Optical Drive), or a DVD (Digital Video Disc), or a semiconductor memory such as flash memory. Figure 9 is a schematic diagram illustrating an embodiment of a plasma processing process performed in the process chamber of Figure 2. Referring to Figure 9, a substrate processing apparatus 1 according to an embodiment of the present invention can process the edge region of a substrate W. For example, the substrate processing apparatus 1 can generate plasma P in the edge region of the substrate W to process the edge region of the substrate W. For example, the substrate processing apparatus 1 can perform a bevel etching process to process the edge region of the substrate W. To perform the bevel etching process on substrate W, lifting pin assembly 250 receives substrate W from second transfer robot 53 and transfers substrate W to support plate 210. To perform the bevel etching process on substrate W, lifting member 270 can move support unit 200 upward to reduce the gap between substrate W and dielectric plate 320. When processing the edge region of substrate W, the substrate processing apparatus 1 can supply a first gas G1 to the central region of substrate W via a first gas supply unit 620, and a second gas G2 to the edge region of substrate W via a second gas supply unit 640. The second gas G2 supplied by the second gas supply unit 640 is a process gas, and can therefore be excited into a plasma P state to process the edge region of substrate W. For example, the thin film on the edge region of substrate W can be etched by plasma P. Furthermore, the first gas G1 supplied to the central region of substrate W is an inactive gas, which prevents the second gas G2 from flowing into the central region of substrate W, further improving the processing efficiency of the edge region of substrate W. In the above embodiments of the present invention, the example described is that the support unit 200 moves in the vertical direction while the positions of the dielectric plate 320 and the upper edge electrode 420 are fixed, but the invention is not limited thereto. For example, the position of the support unit 200 may be fixed while the dielectric plate 320 may move in the vertical direction. Alternatively, both the support unit 200 and the dielectric plate 320 may be configured to move in the vertical direction. Furthermore, in the above embodiments of the present invention, the case where the lower edge electrode 240 and the upper edge electrode 420 are respectively grounded has been described as an example, but the invention is not limited thereto. Either the lower edge electrode 240 or the upper edge electrode 420 may be grounded, while the other may be connected to an RF power supply. Alternatively, both the lower edge electrode 240 and the upper edge electrode 420 may be connected to an RF power supply. The method for generating plasma P in the substrate processing apparatus 1 described in the above example can be ICP (Inductively Coupled Plasma). Alternatively, the method for generating plasma P in the substrate processing apparatus 1 can be CCP (Capacitor Coupled Plasma). Furthermore, the substrate processing apparatus 1 can utilize both ICP and CCP methods, or a method selected from ICP and CCP, to generate plasma P. Additionally, the substrate processing apparatus 1 can also utilize a remote plasma method to generate plasma P. The above detailed description is illustrative of the present invention. Furthermore, while the foregoing has shown and described preferred embodiments of the invention, the invention can be used in a variety of other combinations, modifications, and environments. That is, modifications or revisions can be made within the scope of the concept of the invention disclosed in this specification, the scope equivalent to the foregoing disclosure, and / or the technical or knowledge scope of the industry. The foregoing embodiments describe the optimal state required to embody the technical concept of the invention, and various modifications can also be made as required by the specific application field and use of the invention. Therefore, the above description of the invention is not intended to limit the invention to the disclosed embodiments. Additionally, the appended claims should be interpreted to include other embodiments as well. W: Substrate H: Vacuum Hole H1: Pin Hole H2: Through Hole G2: (Second) Gas P: Plasma 1: Substrate Processing Equipment 4: Bearing Frame 6: Support 10: Loading Port 11: First Direction 12: Second Direction 20: Equipment Front-End Module 21: Transfer Frame 25: First Transfer Robot 27: Transfer Track 30: Processing Module 40: Loading Gate Chamber 50: Transfer Chamber 53: Second Transfer Robot 60: Process Chamber 100: Housing 102: Processing Space 104: Opening 106: Exhaust Hole 108: Exhaust Pipeline 200: Support Unit 210: Support Plate 211: Internal Space 212: Cooling Flow Path 214: Fluid Supply Pipeline 216: Fluid Discharge Pipeline 218: Fluid Supply Source 220: Power Component 222: Power Supply 224: Adapter 226: Power Cord 230: Insulating Ring 240: Lower Edge Electrode 252: Base Plate 252a: Center Part 252b: Body Part 253: Through Hole 254: Connecting Hole 255: Lifting Pin 256: Fixing Component 257: Lower Support 257a: Base Plate Joint 257b: Lower End Joint 257c: First Fixing Part 258: Upper Support 258a: Upper End Joint 258b: Second Fixing Part 259: Driving Component 260: Pressure Reduction Unit 262: Pressure Reduction Pump 264: Pressure Reduction Line 272: Driver 300: Dielectric Plate Unit 320: Dielectric Plate 340: First Base 400: Upper Electrode Unit 420: Upper Edge Electrode 440: Second Base 520: Temperature Regulating Plate 522: Flow Path 620: First Gas Supply Unit 622: First Gas Supply Source 624: First Gas Supply Line 626: First Valve 640: Second Gas Supply Unit 642: Second Gas Supply Source 644: Second Gas Supply Line 646: Second Valve 900: Controller Figure 1 is a schematic diagram illustrating one embodiment of a substrate processing apparatus according to an embodiment of the present invention. Figure 2 is a schematic diagram illustrating one embodiment of the process chamber of Figure 1 according to the present invention. Figure 3 is a schematic diagram showing a top view of the base plate of Figure 2. Figures 4 and 5 are schematic perspective views of the fixing members of Figure 2. Figure 6 is a schematic diagram showing a front view of the lifting pin assembly of Figure 2. Figure 7 is a schematic diagram showing the negative pressure applied to the internal space by the pressure reducing unit of Figure 2. Figure 8 is a schematic diagram showing the enlargement of the pin hole when the negative pressure applied to the internal space by the pressure reducing unit of Figure 7. Figure 9 is a schematic diagram illustrating an embodiment of performing a plasma processing process in the process chamber of Figure 2. H: Vacuum port H1: Pin hole H2: Through hole W: substrate 60: Process Chamber 100: Casing 102: Processing Space 104: Opening 106: Exhaust port 108: Exhaust Pipeline 200: Support unit 210: Support plate 211: Interior Space 212: Cooling flow path 214: Fluid supply lines 216: Fluid discharge pipeline 218: Fluid supply source 220: Power supply components 222: Power Supply 224: Adapter 226: Power cord 230: Insulating ring 240: Lower edge electrode 252: Base Plate 253: Through hole 255: Lifting pin 259: Driving components 260: Pressure Reduction Unit 262: Pressure reducing pump 264: Pressure reducing line 272: Driver 300: Dielectric board unit 320: Dielectric board 340: First base 400: Upper electrode unit 420: Upper edge electrode 440: Second base 520: Temperature Control Panel 522:Flow path 622: First gas supply source 624: First Gas Supply Pipeline 626: First Valve 642: Second gas supply source 644: Second gas supply pipeline 646: Second valve 900: Controller

Claims

1. A substrate processing apparatus, the substrate processing apparatus comprising: The housing has a processing space; the support unit supports the substrate within the processing space. A dielectric plate, wherein the dielectric plate is configured to face the upper surface of the substrate supported by the aforementioned support unit; a gas supply unit, wherein the gas supply unit supplies process gas to the edge region of the aforementioned substrate; A plasma source is provided, wherein the plasma source excites the process gas in the edge region of the substrate to generate plasma. The plasma source includes: an upper edge electrode disposed on the upper part of the edge region of the substrate supported by the support unit; and a lower edge electrode disposed on the lower part of the edge region of the substrate supported by the support unit. The support unit includes: a support plate on which the substrate is placed, having an internal space; a lifting pin assembly that connects the substrate to an external transmission unit; and a pressure reduction unit that depressurizes the internal space. Indirect negative pressure is introduced, wherein a vacuum hole is formed on the upper part of the aforementioned support plate, the aforementioned vacuum hole is connected to the aforementioned internal space, and a substrate placed on the aforementioned support plate is adsorbed. The aforementioned lifting pin assembly includes: a base plate, the aforementioned base plate being located in the aforementioned internal space; a plurality of lifting pins, the plurality of aforementioned lifting pins being provided protruding upwards from the aforementioned base plate to support the bottom surface of the substrate; and a driver, the aforementioned driver causing the aforementioned base plate to rise and fall within the aforementioned internal space, wherein a through hole is formed on the aforementioned base plate, the aforementioned through hole penetrating the upper and lower parts, so as to provide the aforementioned negative pressure provided in the lower region of the aforementioned base plate in the aforementioned internal space to the upper region of the aforementioned base plate in the aforementioned internal space.

2. The substrate processing apparatus as described in claim 1, wherein, The aforementioned vacuum hole includes a pin hole for the aforementioned lifting pin to move up and down.

3. The substrate processing apparatus as described in claim 2, wherein, The aforementioned vacuum hole further includes a through hole, which is spaced apart from the aforementioned pin hole when viewed from above.

4. The substrate processing apparatus as described in claim 1, wherein, When viewed from above, the aforementioned interior space is formed in a shape corresponding to the aforementioned base plate.

5. The substrate processing apparatus as described in claim 4, wherein, The aforementioned base plate includes: a central portion for connection to the aforementioned driver; and a plurality of body portions extending radially from the aforementioned central portion in a strip-like manner, wherein the aforementioned lifting pin and the aforementioned through hole are formed in the aforementioned body portions.

6. The substrate processing apparatus as described in claim 1, wherein, The aforementioned lifting pin assembly further includes: a lower bracket, which is attached to the aforementioned base plate to fix the lower end of the aforementioned lifting pin; and an upper bracket, which is connected to the upper part of the aforementioned lower bracket to fix the aforementioned lower bracket and the aforementioned lifting pin.

7. The substrate processing apparatus as described in claim 6, wherein, The aforementioned lower support and the aforementioned upper support are equipped with a flexible material.

8. The substrate processing apparatus as described in claim 6, wherein, The aforementioned lower support and the aforementioned upper support are equipped with conductive materials.

9. The substrate processing apparatus as described in claim 6, wherein, The aforementioned lower support and the aforementioned upper support are equipped with electrostatic dissipative materials.

10. The substrate processing apparatus as described in claim 6, wherein, The aforementioned lower support and the aforementioned upper support are equipped with anti-static materials.

11. The substrate processing apparatus as described in any one of claims 1 to 10, wherein, The aforementioned lifting pins are equipped with insulating materials.

12. A substrate processing apparatus, the aforementioned substrate processing apparatus comprising: The housing has a processing space; the support unit is disposed inside the housing to support the substrate. The gas supply unit supplies process gas to the processing space; the plasma source generates plasma from the process gas; the support unit includes: a support plate on which a substrate is placed and has an internal space; a lifting pin assembly that connects the substrate to an external transmission unit; and a pressure reduction unit that introduces negative pressure into the internal space, wherein a vacuum hole is formed on the upper part of the support plate and communicates with the internal space to adsorb the substrate placed on the support plate; the lifting pin assembly includes: a base plate located in the internal space; a plurality of lifting pins protruding from the upper part of the base plate and supporting the bottom surface of the substrate; and a driver that causes the base plate to move up and down within the internal space, wherein a through hole is formed on the base plate and extends through the upper and lower parts to provide the negative pressure provided in the lower region of the base plate in the internal space to the upper region of the base plate in the internal space.

13. The substrate processing apparatus as described in claim 12, wherein, The aforementioned vacuum hole includes a pin hole for the aforementioned lifting pin to move up and down.

14. The substrate processing apparatus as described in claim 13, wherein, The aforementioned vacuum hole further includes a through hole, which is spaced apart from the aforementioned pin hole when viewed from above.

15. The substrate processing apparatus as described in claim 14, wherein, When viewed from above, the aforementioned interior space is formed in a shape corresponding to the aforementioned base plate.

16. The substrate processing apparatus as described in claim 15, wherein, The aforementioned base plate includes: a central portion for connection to the aforementioned driver; and a plurality of body portions extending radially from the aforementioned central portion in a strip-like manner, wherein the aforementioned lifting pin and the aforementioned through hole are formed in the aforementioned body portions.

17. The substrate processing apparatus as described in claim 12, wherein, The aforementioned lifting pin assembly further includes: a lower bracket, which is attached to the aforementioned base plate to fix the lower end of the aforementioned lifting pin; and an upper bracket, which is connected to the upper part of the aforementioned lower bracket to fix the aforementioned lower bracket and the aforementioned lifting pin.

18. The substrate processing apparatus as described in claim 17, wherein, The aforementioned lower support and the aforementioned upper support are equipped with materials that suppress static electricity generation, and the aforementioned lifting pin is equipped with insulating materials.

19. A support unit, wherein the support unit is used to support a substrate, comprising: The support plate, on which a substrate is placed, supports the internal space; a lifting pin assembly, which connects the substrate to the external transmission unit of the support plate; and a pressure reducing unit, which introduces negative pressure into the internal space, wherein a vacuum hole is formed on the upper part of the support plate, the vacuum hole communicating with the internal space, and adsorbing the substrate placed on the support plate. The lifting pin assembly includes: a base plate, located in the internal space; a plurality of lifting pins, which protrude upwards from the upper part of the base plate and support the bottom surface of the substrate; and a driver, which causes the base plate to move up and down within the internal space, wherein a through hole is formed on the base plate, the through hole penetrating the upper and lower parts, so as to provide the negative pressure provided in the lower region of the base plate in the internal space to the upper region of the base plate in the internal space.

20. The support unit as described in claim 19, wherein, The aforementioned vacuum hole includes: a pin hole for the aforementioned lifting pin to move up and down; and a through hole, which is provided separately from the aforementioned pin hole when viewed from above.

21. The support unit as described in claim 20, wherein, When viewed from above, the aforementioned interior space is formed in a shape corresponding to the aforementioned base plate.

22. The support unit as described in claim 21, wherein, The aforementioned base plate includes: a central portion for connection to the aforementioned driver; and a plurality of body portions extending radially from the aforementioned central portion in a strip-like manner, wherein the aforementioned lifting pin and the aforementioned through hole are formed in the aforementioned body portions.

23. The support unit as described in claim 19, wherein, The aforementioned lifting pin assembly further includes: a lower bracket, which is attached to the aforementioned base plate to fix the lower end of the aforementioned lifting pin; and an upper bracket, which is connected to the upper part of the aforementioned lower bracket to fix the aforementioned lower bracket and the aforementioned lifting pin.

24. The support unit as described in claim 23, wherein, The aforementioned lower support and the aforementioned upper support are equipped with materials that suppress static electricity generation, and the aforementioned lifting pin is equipped with insulating materials.

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