Electronic component

Abstract

An electronic component is provided that enables planarization of the insulating film covering a thin-film capacitor and reduction of parasitic capacitance. The thin-film capacitor includes a lower electrode disposed on one side of a substrate, i.e., a first surface, a capacitor dielectric film disposed on the lower electrode, and an upper electrode disposed on the capacitor dielectric film. An insulating resin film is disposed on the first surface covering the thin-film capacitor. The upper electrode comprises two layers: a titanium film mainly containing Ti and a platinum film mainly containing Pt, with the platinum film disposed between the titanium film and the resin film.

Description

Technical Field

[0001] The invention relates to an electronic component. Prior Art

[0002] Thin film capacitors such as MIM capacitors are used in small electronic devices (Patent Document 1). Thin film capacitors are composed of a lower electrode, a capacitor dielectric film, and an upper electrode arranged on a substrate. The thin film capacitor disclosed in Patent Document 1 is covered with an insulating hydrogen barrier film such as Al2O3, TiO2, Ta2O5, SiN, and an insulating film such as Al2O3, SiO2. [Prior Technical Literature] [Patent Document]

[0003] Patent Document 1: Japanese Patent Application Publication No. 2010-109014 Summary of the invention

[0004] [Problems to be solved by the invention] When an electronic circuit is arranged on an insulating film covering a thin film capacitor, it is preferable to flatten the upper surface of the insulating film. In addition, it is desirable to reduce the parasitic capacitance between the thin film capacitor and the electronic circuit on the insulating film. The object of the present invention is to provide an electronic component capable of flattening the insulating film covering a thin film capacitor and reducing the parasitic capacitance. [Technical means to solve the problem]

[0005] According to one aspect of the present invention, there is provided an electronic component comprising: substrate; A thin film capacitor comprising a lower electrode disposed on one side of the substrate, namely, the first side, a capacitor dielectric film disposed on the lower electrode, and an upper electrode disposed on the capacitor dielectric film; and an insulating resin film, which is arranged on the first surface so as to cover the film capacitor, The upper electrode includes two layers, a titanium film mainly containing Ti and a platinum film mainly containing Pt, and the platinum film is arranged between the titanium film and the resin film. [Effects of the Invention]

[0006] By covering the thin film capacitor with a resin film, it is easier to flatten the upper surface of the resin film than when the capacitor is covered with an insulating film made of an inorganic insulating material. In addition, generally, the dielectric constant of the insulating resin is lower than the dielectric constant of the inorganic insulating material, so the parasitic capacitance between the thin film capacitor and the electronic circuit on the resin film can be reduced. In addition, the platinum film functions as a barrier film that prevents moisture from penetrating from the resin film to the titanium film. As a result, the penetration of moisture into the capacitor dielectric film is also suppressed, and the degradation of the capacitor dielectric film can be suppressed. Simple diagram description

[0007] [Fig. 1] is a cross-sectional view of the electronic component of the first embodiment. [Fig. 2] is a cross-sectional view of the electronic component of the second embodiment. 3A to 3D are cross-sectional views of the electronic component of the second embodiment at an intermediate stage of manufacturing. [Fig. 4] is a cross-sectional view of the electronic component of the third embodiment. [Fig. 5] is a cross-sectional view of the electronic component of the fourth embodiment. [Fig. 6] is a cross-sectional view of the electronic component of the fifth embodiment. [Fig. 7] is a cross-sectional view of the electronic component of the sixth embodiment. [Fig. 8] is a cross-sectional view of the electronic component of the seventh embodiment. 9 is a diagram showing the positional relationship between the first opening and the second opening of the electronic component of the seventh embodiment when viewed from above. [Fig. 10] is a cross-sectional view of the electronic component of the eighth embodiment. Implementation

[0008] [First embodiment] An electronic component according to a first embodiment will be described with reference to FIG. 1 . FIG1 is a cross-sectional view of an electronic component of the first embodiment. A thin film capacitor 20 is arranged on an insulating surface (hereinafter referred to as a first surface 10A) of a substrate 10 having an insulating surface layer portion. The thin film capacitor 20 includes a lower electrode 21 arranged on the first surface 10A, a capacitor dielectric film 22 arranged on the lower electrode 21, and an upper electrode 23 arranged on the capacitor dielectric film 22. Alternatively, the capacitor dielectric film 22 may be composed of a plurality of dielectric films composed of different dielectric materials.

[0009] When the first surface 10A is viewed in plan (hereinafter, sometimes referred to as “in plan view”), the capacitor dielectric film 22 is included in the lower electrode 21. When viewed in plan, the upper electrode 23 is included in the capacitor dielectric film 22.

[0010] An insulating resin film 40 is disposed on the first surface 10A so as to cover the thin film capacitor 20. The upper surface of the resin film 40 is substantially flat. A first opening 40H is formed in the resin film 40 to expose a portion of the upper electrode 23. A wiring 50 is disposed on the resin film 40, and the wiring 50 passes through the first opening 40H and is connected to the upper electrode 23.

[0011] As the substrate 10, a compound semiconductor substrate such as a semi-insulating GaAs substrate is used. In addition, a GaN substrate, an InP substrate, a SiC substrate, etc. may also be used. In addition, a Si substrate may be used instead of a compound semiconductor substrate.

[0012] The lower electrode 21 uses a metal material such as Au, Ti, Pt, W, Al, Mo, Cr, etc. The capacitor dielectric film 22 uses, for example, silicon nitride (SiN). The upper electrode 23 is composed of a titanium film 23A and a platinum film 23B. Here, "titanium film" refers to a film formed of a metal material mainly containing Ti, and "platinum film" refers to a film formed of a metal material mainly containing Pt. For example, when the content of Ti is 10 atomic weight % or more, it can be called "mainly containing Ti", and when the content of Pt is 10 atomic weight % or more, it can be called "mainly containing Pt". The platinum film 23B is arranged between the titanium film 23A and the resin film 40. When viewed from above, the titanium film 23A and the platinum film 23B have the same shape and size, and are arranged almost overlapping. In addition, the upper electrode 23 can also be a single-layer structure or a multi-layer structure of more than three layers. In addition, the lower electrode 21 can also be composed of two or more conductive films composed of different conductive materials.

[0013] The resin film 40 uses an insulating resin such as polyimide resin, epoxy resin, benzocyclobutene (BCB) resin, polybenzoxazole (PBO) resin, etc. The resin film 40 can be formed by a coating method, etc. The wiring 50 uses Cu, for example.

[0014] Next, the excellent effects of the first embodiment are described. In the first embodiment, the thin film capacitor 20 is covered with a resin film 40. Compared with an insulating film made of an inorganic insulating material, the resin film 40 is easier to flatten the upper surface. By flattening the upper surface of the resin film 40, the electronic circuit such as the wiring 50 above the resin film 40 can be miniaturized.

[0015] The dielectric constant of the insulating resin used as the material of the resin film 40 is generally smaller than the dielectric constant of inorganic insulating materials such as Al 2 O 3, SiN, and SiO 2. Therefore, the parasitic capacitance between the thin film capacitor 20 and the electronic circuit disposed on the resin film 40 can be reduced.

[0016] Ti used for the upper electrode 23 easily reacts with moisture. If the titanium film 23A of the upper electrode 23 contacts the resin film 40, moisture in the resin film 40 will penetrate into the titanium film 23A, pass through the titanium film 23A and reach the capacitor dielectric film 22. If moisture penetrates into the capacitor dielectric film 22, the degradation of the capacitor dielectric film 22 is promoted. In the first embodiment, the platinum film 23B functions as a barrier film that prevents moisture from penetrating from the resin film 40 to the titanium film 23A. As a result, the penetration of moisture into the capacitor dielectric film 22 is also suppressed, and the degradation of the capacitor dielectric film 22 can be suppressed. In order to fully ensure the function of the platinum film 23B as a barrier film, it is preferable to make the thickness of the platinum film 23B be 5nm or more. In addition, the titanium film 23A has a function of improving the adhesion between the upper electrode 23 and the capacitor dielectric film 22.

[0017] [Second embodiment] Next, the electronic component of the second embodiment will be described with reference to Fig. 2 to Fig. 3D. Hereinafter, description of the "structure common to the electronic component of the first embodiment described with reference to Fig. 1" will be omitted.

[0018] FIG2 is a cross-sectional view of the electronic component of the second embodiment. In the first embodiment (FIG. 1), the capacitor dielectric film 22 is included in the lower electrode 21 when viewed from above. In contrast, in the second embodiment, the capacitor dielectric film 22 expands to the outside of the lower electrode 21 and covers the side surface of the lower electrode 21 when viewed from above.

[0019] Next, the manufacturing method of the electronic component of the second embodiment will be described with reference to Figures 3A to 3D. Figures 3A to 3D are cross-sectional views of the electronic component of the second embodiment at a mid-stage of manufacturing.

[0020] As shown in FIG3A , the lower electrode 21 is formed on the first surface 10A of the substrate 10. The lower electrode 21 can be formed by a lift-off method. Alternatively, a photolithography method can be used. Furthermore, the thin film formed of the metal material constituting the lower electrode 21 can be formed by a vapor deposition method.

[0021] As shown in FIG. 3B , a capacitor dielectric film 22 is formed on the first surface 10A so as to cover the lower electrode 21. The capacitor dielectric film 22 can be formed by, for example, chemical vapor deposition (CVD). Thereafter, unnecessary portions of the capacitor dielectric film 22 are etched away by photolithography. In addition, in the case where the capacitor dielectric film 22 is left on the entire area of the first surface 10A, this etching is not necessary. Depending on the range of etching removal, the capacitor dielectric film 22 included in the lower electrode 21 when viewed from above can also be formed as in the first embodiment ( FIG. 1 ).

[0022] As shown in FIG3C, an upper electrode 23 having a laminated structure of a titanium film 23A and a platinum film 23B is formed on the capacitor dielectric film 22. The upper electrode 23 can be formed by, for example, a lift-off method. Alternatively, a photolithography method can be used.

[0023] As shown in Fig. 3D, a resin film 40 is formed on the entire area of the first surface 10A so as to cover the thin film capacitor 20. The resin film 40 can be formed by, for example, a coating method.

[0024] 2, a first opening 40H is formed in the resin film 40. The first opening 40H can be formed, for example, by applying a photosensitive resin material to the resin film 40, and performing exposure and development. Then, a wiring 50 is formed on the resin film 40. The wiring 50 can be formed by a lift-off method.

[0025] Next, the excellent effects of the second embodiment are described. The second embodiment also achieves the same excellent effects as the first embodiment. In the second embodiment, the upper surface and the side surface of the lower electrode 21 are covered with the capacitor dielectric film 22, so that water can be prevented from entering the lower electrode 21 from the resin film 40. In order for the capacitor dielectric film 22 to fully function as a barrier film for preventing water from entering, it is preferable to use silicon nitride, which is more chemically stable than silicon oxide, as the capacitor dielectric film 22.

[0026] [Third embodiment] Next, the electronic component of the third embodiment will be described with reference to Fig. 4. Hereinafter, description of the "structure common to the electronic components of the first and second embodiments described with reference to Figs. 1 to 3D" will be omitted.

[0027] FIG4 is a cross-sectional view of the electronic component of the third embodiment. In the first embodiment (FIG. 1) and the second embodiment (FIG. 2), the upper electrode 23 is composed of two layers of a titanium film 23A and a platinum film 23B. In contrast, in the third embodiment, the upper electrode 23 further includes a gold film 23C disposed on the platinum film 23B. The gold film 23C mainly contains Au. For example, when the content of Au is 10 atomic weight % or more, it can be said that it "mainly contains Au".

[0028] Next, the excellent effects of the third embodiment are described. In the third embodiment, the upper electrode 23 includes the gold film 23C, so the sheet resistance of the upper electrode 23 can be reduced compared to the case where the upper electrode 23 is composed of two layers of the titanium film 23A and the platinum film 23B. In addition, when the gold film 23C is in contact with the titanium film 23A, the heat applied during the manufacturing process causes titanium to diffuse into the grain boundary of the gold film 23C. In the third embodiment, the platinum film 23B is arranged between the titanium film 23A and the gold film 23C. The platinum film 23B functions as a barrier film that suppresses the diffusion of titanium into the gold film 23C. Therefore, the diffusion of titanium into the gold film 23C can be suppressed.

[0029] [Fourth embodiment] Next, the electronic component of the fourth embodiment will be described with reference to Fig. 5. Hereinafter, description of the "structure common to the electronic component of the third embodiment described with reference to Fig. 4" will be omitted.

[0030] FIG5 is a cross-sectional view of the electronic component of the fourth embodiment. In the third embodiment ( FIG4 ), the upper surface of the gold film 23C of the upper electrode 23 is in contact with the resin film 40 . In contrast, in the fourth embodiment, the titanium film 23D is disposed between the gold film 23C and the resin film 40 .

[0031] Next, the excellent effects of the fourth embodiment are described. The adhesion between the titanium film 23D and the resin film 40 is higher than the adhesion between the gold film 23C and the resin film 40. In the fourth embodiment, the titanium film 23D is arranged between the gold film 23C and the resin film 40, so the adhesion between the upper electrode 23 and the resin film 40 can be improved.

[0032] In the fourth embodiment, a platinum film 23B is disposed between the lower titanium film 23A and the gold film 23C to suppress the diffusion of Ti into the gold film 23C, and no platinum film is disposed between the gold film 23C and the upper titanium film 23D. In this structure, the platinum film 23B disposed between the lower titanium film 23A and the gold film 23C also has a function of suppressing the infiltration of moisture from the resin film 40 into the capacitor dielectric film 22. Therefore, the effect of suppressing the deterioration of the capacitor dielectric film 22 is maintained.

[0033] [Fifth embodiment] Next, the electronic component of the fifth embodiment will be described with reference to Fig. 6. Hereinafter, description of the "structure common to the electronic component of the fourth embodiment described with reference to Fig. 5" will be omitted.

[0034] Fig. 6 is a cross-sectional view of the electronic component of the fifth embodiment. In the fourth embodiment (Fig. 5), no platinum film is arranged between the gold film 23C and the upper titanium film 23D, but in the fifth embodiment, an upper platinum film 23E is arranged between the gold film 23C and the upper titanium film 23D.

[0035] Next, the excellent effects of the fifth embodiment are described. In the fifth embodiment, the diffusion of titanium from the upper titanium film 23D into the gold film 23C is suppressed by the upper platinum film 23E. Therefore, the effect of suppressing the infiltration of moisture from the resin film 40 into the capacitor dielectric film 2 can be improved.

[0036] [Sixth embodiment] Next, the electronic component of the sixth embodiment will be described with reference to Fig. 7. Hereinafter, description of the "structure common to the electronic component of the second embodiment described with reference to Figs. 2 to 3D" will be omitted.

[0037] FIG7 is a cross-sectional view of an electronic component of the sixth embodiment. In the second embodiment (FIG. 2), the upper electrode 23 of the film capacitor 20 and the capacitor dielectric film 22 are in contact with the resin film 40. In contrast, in the sixth embodiment, an inorganic insulating film 30 made of an inorganic insulating material is disposed between the upper electrode 23 and the resin film 40.

[0038] The inorganic insulating film 30 is extended to the region where the capacitor dielectric film 22 is arranged, and is also arranged between the capacitor dielectric film 22 and the resin film 40. The inorganic insulating film 30 can be made of, for example, silicon oxide, silicon oxynitride, silicon nitride, aluminum oxide, etc. The inorganic insulating film 30 is provided with a second opening 30H having almost the same shape and size as the first opening 40H provided in the resin film 40. The wiring 50 passes through the first opening 40H and the second opening 30H and is connected to the upper electrode 23.

[0039] Next, the manufacturing method of the electronic component of the sixth embodiment is described. After the upper electrode 23 is formed as shown in FIG3C , before the resin film 40 shown in FIG3D is formed, the inorganic insulating film 30 is formed by CVD or the like. After the inorganic insulating film 30 is formed, the resin film 40 is formed, and then the first opening 40H is formed in the resin film 40. Further, the second opening 30H is formed in the inorganic insulating film 30. When the second opening 30H is formed in the inorganic insulating film 30, the resin film 40 can be used as an etching mask.

[0040] Next, the excellent effects of the sixth embodiment are described. In the sixth embodiment, the moisture contained in the resin film 40 does not directly contact the upper electrode 23, the capacitor dielectric film 22, and the lower electrode 21 of the thin film capacitor 20. The inorganic insulating film 30 suppresses the intrusion of moisture from the resin film 40 into the thin film capacitor, thereby improving the moisture resistance of the electronic component.

[0041] [Seventh embodiment] Next, the electronic component of the seventh embodiment will be described with reference to Fig. 8 and Fig. 9. Hereinafter, description of the "structure common to the electronic component of the sixth embodiment (Fig. 7)" will be omitted.

[0042] FIG8 is a cross-sectional view of the electronic component of the seventh embodiment. In the sixth embodiment ( FIG7 ), the first opening 40H provided in the resin film 40 and the second opening 30H provided in the inorganic insulating film 30 have the same shape and size, and are almost overlapped in a plan view. In contrast, in the seventh embodiment, in a plan view, the second opening 30H is smaller than the first opening 40H, and the second opening 30H is included in the first opening 40H.

[0043] Next, the manufacturing method of the electronic component of the seventh embodiment is described. After the upper electrode 23 is formed as shown in FIG3C, before the resin film 40 shown in FIG3D is formed, the inorganic insulating film 30 is formed by CVD or the like. Thereafter, the second opening 30H is formed on the inorganic insulating film 30 using a photolithography process. Next, the resin film 40 is formed, and the first opening 40H is formed on the resin film 40. Alternatively, the resin film 40 may be formed before the second opening 30H is formed on the inorganic insulating film 30. In this case, after the first opening 40H is formed on the resin film 40, the second opening 30H is formed on the inorganic insulating film 30 exposed at the bottom surface of the first opening 40H.

[0044] Fig. 9 is a diagram showing the positional relationship between the first opening 40H and the second opening 30H of the electronic component of the seventh embodiment in a plan view. The cross-sectional view taken along the dashed line 8-8 in Fig. 9 corresponds to Fig. 8. In a plan view, the second opening 30H is included in the first opening 40H.

[0045] Next, the excellent effects of the seventh embodiment are described. In the seventh embodiment, the moisture in the resin film 40 moves along the interface between the inorganic insulating film 30 and the wiring 50 from the edge of the first opening 40H to the edge of the second opening 30H as shown by the arrow 45 in FIG. 8 , and then moves downward along the side of the second opening 30H to reach the upper electrode 23. Therefore, compared with the structure of the sixth embodiment ( FIG. 7 ), the path for the moisture to reach the upper electrode 23 becomes longer. Since the path of the moisture becomes longer, it is difficult for the moisture to reach the upper electrode 23. As a result, it is possible to achieve improved moisture resistance.

[0046] In order to obtain a sufficient effect of improving the moisture resistance, it is preferable that the shortest distance Wmin from the edge of the second opening 30H to the edge of the first opening 40H in a plan view is longer than the thickness of the inorganic insulating film 30 .

[0047] Next, a modified example of the seventh embodiment is described. In the seventh embodiment, the second opening 30H is included in the first opening 40H in a plan view, but it is not necessary to arrange the edge of the first opening 40H to be arranged outside the second opening 30H over the entire area. It is also possible to arrange at least part of the edge of the first opening 40H to be arranged outside the second opening 30H. In this structure, the infiltration path of moisture starting from "the edge of the first opening 40H arranged outside the second opening 30H in a plan view" is also longer. Therefore, compared with the structure of the sixth embodiment (FIG. 7), it is possible to achieve improved moisture resistance.

[0048] [Eighth Embodiment] Next, the electronic component of the eighth embodiment will be described with reference to Fig. 10. Hereinafter, description of the "structure common to the electronic component of the second embodiment described with reference to Figs. 2 to 3D" will be omitted.

[0049] FIG10 is a cross-sectional view of the electronic component of the eighth embodiment. The electronic component of the second embodiment (FIG. 2) includes a thin film capacitor 20 disposed on a substrate 10. In contrast, the electronic component of the eighth embodiment includes electronic circuit elements such as a heterojunction bipolar transistor 60 and an inductor 80 in addition to the thin film capacitor 20.

[0050] An epitaxial growth layer 12 made of n-type GaAs is arranged on a substrate 10 made of semi-insulating GaAs. An element isolation region 12I whose resistance is increased by ion implantation or the like is formed locally in the epitaxial growth layer 12. An n-type subcollector layer 12S surrounded by the element isolation region 12I is defined. A heterojunction bipolar transistor 60 is arranged on the subcollector layer 12S.

[0051] The heterojunction bipolar transistor 60 includes a collector layer, a base layer, and an emitter layer sequentially stacked on the sub-collector layer 12S. A collector electrode 60C is disposed on the sub-collector layer 12S, and the collector electrode 60C is connected to the collector layer of the heterojunction bipolar transistor 60 via the sub-collector layer 12S. A base electrode 60B is disposed on the base layer, and an emitter electrode 60E is disposed on the emitter layer.

[0052] An insulating film 15 is disposed over the entire upper surface of the substrate 10 to cover the heterojunction bipolar transistor 60 , the collector electrode 60C, the base electrode 60B, and the emitter electrode 60E. The thin film capacitor 20 and the inductor 80 are disposed on the insulating film 15 .

[0053] A plurality of metal patterns of the first wiring layer are arranged on the insulating film 15. The collector wiring 61C and the emitter wiring 61E arranged on the first wiring layer are connected to the collector electrode 60C and the emitter electrode 60E respectively through the openings provided in the insulating film 15. The "lower electrode 21 constituting the thin film capacitor 20 and a part of the wiring 81 of the inductor 80" are also arranged on the first wiring layer. In the first embodiment (FIG. 1), the lower electrode 21 is directly arranged on the first surface 10A of the substrate 10, but it can also be arranged indirectly through other films (epitaxial growth layer 12, insulating film 15, etc.) arranged on the substrate 10 as in the eighth embodiment.

[0054] The capacitor dielectric film 22 covering the lower electrode 21 covers other metal patterns of the first wiring layer, such as the collector wiring 61C, the emitter wiring 61E, and the wiring 81 of the inductor 80. An insulating film 35 made of insulating resin is arranged in the region overlapping the collector wiring 61C and the wiring 81 of the inductor 80 in a plan view.

[0055] A plurality of metal patterns of the second wiring layer are arranged on the capacitor dielectric film 22 and the insulating film 35. For example, the second wiring layer includes the emitter wiring 62E, the upper electrode 23, and a portion of the wiring 82 constituting the inductor 80. The emitter wiring 62E of the second layer passes through an opening provided in the capacitor dielectric film 22 and is connected to the emitter wiring 61E of the first layer. The wiring 82 of the second layer constituting the inductor 80 passes through an opening (provided in a portion other than the cross section shown in FIG. 10) provided in the insulating film 35 and the capacitor dielectric film 22 and is connected to the wiring 81 of the first layer.

[0056] An inorganic insulating film 30 is disposed on the wiring layer of the second layer, and a resin film 40 is disposed thereon. A plurality of metal patterns of the wiring layer of the third layer are disposed on the resin film 40. The wiring layer of the third layer includes an emitter wiring 63E, a wiring 50, and the like. The emitter wiring 63E of the third layer passes through openings provided in the resin film 40 and the inorganic insulating film 30 and is connected to the emitter wiring 62E of the second layer. The wiring 50 passes through a first opening 40H provided in the resin film 40 and a second opening 30H provided in the inorganic insulating film 30 and is connected to the upper electrode 23 of the thin film capacitor 20.

[0057] The thin film capacitor 20 is connected to electronic circuit elements such as the heterojunction bipolar transistor 60 and the inductor 80 via wirings in the wiring layers from the first layer to the third layer.

[0058] Next, the excellent effects of the eighth embodiment are described. In the electronic component in which electronic circuit elements such as the heterojunction bipolar transistor 60 and the inductor 80 are integrated in addition to the thin film capacitor 20, the same excellent effects as those of the first to seventh embodiments are obtained.

[0059] The above-mentioned embodiments are illustrative, and it is of course possible to replace or combine parts of the structures shown in different embodiments. The same effects based on the same structure of multiple embodiments are not mentioned in sequence according to each embodiment. In addition, the present invention is not limited to the above-mentioned embodiments. For example, for those with ordinary knowledge in the technical field to which the present invention belongs, it is of course possible to make various changes, improvements, combinations, etc.

[0060] Based on the above embodiments described in this specification, the following invention is disclosed. <1> An electronic component, comprising: substrate; A thin film capacitor comprising a lower electrode disposed on one side of the substrate, namely, the first side, a capacitor dielectric film disposed on the lower electrode, and an upper electrode disposed on the capacitor dielectric film; and an insulating resin film, which is arranged on the first surface so as to cover the film capacitor, The upper electrode includes two layers, a titanium film mainly containing Ti and a platinum film mainly containing Pt, and the platinum film is arranged between the titanium film and the resin film.

[0061] <2> like <1> The electronic component, wherein the upper electrode further comprises: a gold film mainly containing Au arranged between the platinum film and the resin film.

[0062] <3> like <1> or <2> The electronic component further comprises an inorganic insulating film composed of an inorganic insulating material and arranged between the upper electrode and the resin film.

[0063] <4> like <3> The electronic component further comprises wiring arranged on the resin film. The wiring is connected to the upper electrode through a first opening provided in the resin film and a second opening provided in the inorganic insulating film. When the first surface is viewed from above, at least a portion of the edge of the first opening is arranged outside the second opening.

[0064] <5> like <4> The electronic component, wherein, when the first surface is viewed from above, the second opening is included in the first opening, and the shortest distance from the edge of the second opening to the edge of the first opening is greater than the thickness of the inorganic insulating film.

[0065] <6> like <4> or <5> The electronic component further comprises an electronic circuit element, which is arranged on a region of the first surface where the thin film capacitor is not arranged, and is connected to the thin film capacitor via the wiring.

[0066] <7> like <1> to <6> The electronic component described in any one of the above, wherein, when the first surface is viewed from above, at least a portion of the edge of the lower electrode is arranged outside the upper electrode.

[0067] <8> like <1> to <7> The electronic component described in any one of the above, wherein the capacitor dielectric film includes silicon nitride and covers the side surfaces of the lower electrode.

[0068] <9> like <1> to <8> The electronic component described in any one of the above, wherein the thickness of the platinum film is greater than 5 nm.

[0069] 10:Substrate 10A: Surface 1 of the substrate 12: Epitaxial growth layer 12S: Sub-collector layer 12I: Component separation area 15: Insulation film 20: Capacitor 21: Lower electrode 22: Capacitor dielectric film 23: Upper electrode 23A: Titanium film 23B: Platinum film 23C: Gold film 23D: Titanium film 23E: Platinum film 30: Inorganic insulating film 30H: 2nd opening 35: Insulation film 40: Resin film 40H: 1st opening 45: Arrow indicating the path of water 50: Wiring 60: Heterojunction Bipolar Transistor 60B: Base electrode 60C: Collector electrode 60E: Emitter electrode 61C: Collector wiring 61E, 62E, 63E: Emitter wiring 80: Inductor 81, 82: Wiring that forms an inductor Wmin: shortest distance

Claims

1. An electronic component comprising: a substrate; a thin-film capacitor including a lower electrode disposed on one side of the substrate, i.e., a first side, a capacitor dielectric film disposed on the lower electrode, and an upper electrode disposed on the capacitor dielectric film; and an insulating resin film disposed on the first side covering the thin-film capacitor, the upper electrode comprising two layers: a titanium film mainly comprising Ti and a platinum film mainly comprising Pt, the platinum film being disposed between the titanium film and the resin film, the electronic component further comprising an inorganic insulating film made of an inorganic insulating material disposed between the upper electrode and the resin film, and wiring disposed on the resin film, the wiring passing through a first opening in the resin film and a second opening in the inorganic insulating film and connected to the upper electrode, wherein, when viewed from above the first side, at least a portion of the edge of the first opening is disposed further outward than the second opening.

2. As in the electronic component of claim 1, wherein, The aforementioned upper electrode also includes a gold film, primarily containing Au, disposed between the aforementioned platinum film and the aforementioned resin film.

3. As in the electronic component of request item 1, wherein, When viewed from above the first surface, the second opening is contained within the first opening, and the shortest distance from the edge of the second opening to the edge of the first opening is greater than the thickness of the inorganic insulating film.

4. The electronic component of claim 1 further comprises an electronic circuit element disposed on the area of ​​the first surface where the thin film capacitor is not disposed, and connected to the thin film capacitor via the wiring.

5. Electronic components as requested in item 1 or 2, wherein, When viewed from above the first surface, at least a portion of the edge of the lower electrode is disposed outside the upper electrode.

6. Electronic components as requested in item 1 or 2, wherein, The capacitor dielectric film contains silicon nitride and covers the side of the lower electrode.

7. Electronic components as requested in item 1 or 2, wherein, The thickness of the aforementioned platinum film is 5 nm or more.

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