Surface emitting laser device and manufacturing method thereof

Abstract

A surface-emitting laser device includes a first type distributed Bragg reflector layer, an active layer, a second type distributed Bragg reflector layer, and an oxide layer. The active layer is disposed on the first type distributed Bragg reflector layer, and the second type distributed Bragg reflector layer is disposed on the active layer. The oxide layer is disposed on the side of the second type distributed Bragg reflector layer near the active layer, and the oxide layer has an opening through which light emitted from the active layer passes. The second type distributed Bragg reflector layer has multiple holes located above the opening and along the light exit path of the light emitted from the active layer. A method for manufacturing the surface-emitting laser device has also been proposed.

Claims

1. A surface-emitting laser device, comprising: A type I distributed Bragg reflector; An active layer is disposed on the first type of distributed Bragg reflector layer; A second type distributed Bragg reflector layer is disposed on the active layer; and an oxide layer is disposed on the side of the second type distributed Bragg reflector layer near the active layer, wherein the oxide layer has an opening through which light emitted from the active layer passes; wherein the second type distributed Bragg reflector layer has a plurality of holes located above the opening and in the light exit path of the light emitted from the active layer.

2. The surface-emitting laser device as claimed in claim 1, wherein the holes are arranged in at least one ring above the opening.

3. The surface-emitting laser device as claimed in claim 2, wherein the holes are arranged periodically in at least one ring.

4. The surface-emitting laser device as claimed in claim 1, wherein the diameter of the opening falls within the range of 8 micrometers to 15 micrometers.

5. The surface-emitting laser device as claimed in claim 1, wherein one of the first type distributed Bragg reflector and the second type distributed Bragg reflector is an N-type semiconductor layer, and the other of the first type distributed Bragg reflector and the second type distributed Bragg reflector is a P-type semiconductor layer.

6. The surface-emitting laser device as claimed in claim 1 further includes an upper electrode disposed in the surrounding area of ​​the top of the second type distributed Bragg reflector.

7. The surface-emitting laser device as claimed in claim 1 further includes a protective layer disposed on top of the second type distributed Bragg reflector.

8. The surface-emitting laser device as claimed in claim 1, wherein the first type distributed Bragg reflector layer also has a plurality of holes located below the opening.

9. A method for manufacturing a surface-emitting laser device, comprising: A surface-emitting laser wafer is provided, wherein the surface-emitting laser wafer includes a first type distributed Bragg reflector layer, an active layer, a second type distributed Bragg reflector layer, and an oxide layer. The active layer is disposed on the first type distributed Bragg reflector layer, the second type distributed Bragg reflector layer is disposed on the active layer, and the oxide layer is disposed on the side of the second type distributed Bragg reflector layer near the active layer. The oxide layer has an opening for allowing light emitted from the active layer to pass through, and a plurality of holes are formed in the second type distributed Bragg reflector layer above the opening.

10. A method of manufacturing a surface-emitting laser device as claimed in claim 9, wherein the holes are arranged in at least one ring above the opening.

11. A method of manufacturing a surface-emitting laser device as claimed in claim 10, wherein the holes are arranged periodically in at least one circle.

12. A method for manufacturing an area-emitting laser device as claimed in claim 9, wherein the diameter of the opening is in the range of 8 micrometers to 15 micrometers.

13. A method for manufacturing a surface-emitting laser device as claimed in claim 9, wherein one of the first type distributed Bragg reflector layer and the second type distributed Bragg reflector layer is an N-type semiconductor layer, and the other of the first type distributed Bragg reflector layer and the second type distributed Bragg reflector layer is a P-type semiconductor layer.

14. A method for manufacturing a surface-emitting laser device as claimed in claim 9, wherein the step of forming the holes above the opening in the second type distributed Bragg reflector layer is to focus an ultrashort pulse laser into the second type distributed Bragg reflector layer to form the holes above the opening.

15. A method for manufacturing an area-emitting laser device as claimed in claim 14, wherein the ultrashort pulse laser is a femtosecond laser or a picosecond laser.

16. A method of manufacturing a surface-emitting laser device as claimed in claim 14, wherein the ultrashort pulse laser creates a destructive hole in the second type distributed Bragg reflector layer by means of nonlinear effects or multiphoton absorption effects.

17. The method of manufacturing a surface-emitting laser device as claimed in claim 9 further includes forming a plurality of holes below the opening in the first type distributed Bragg reflector layer.

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