Light emitting diode package structure

TWI935737BActive Publication Date: 2026-08-11ENNOSTAR CORP
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Patent Information

Application Number
TW114111888
Authority / Receiving Office
TW · TW
Patent Type
Patents
Current Assignee / Owner
Filing Date
2025-03-27
Publication Date
2026-08-11
Estimated Expiration
2045-03-26

Smart Images

  • Figure TWG2TB001905676_001
    Figure TWG2TB001905676_001
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    Figure TWG2TB001905676_002
  • Figure TWG2TB001905676_003
    Figure TWG2TB001905676_003
Patent Text Reader

Abstract

This disclosure provides a light-emitting diode (LED) packaging structure, comprising an insulating layer, a plurality of LEDs, a circuit layer, a plurality of bonding pads, and a light conversion layer. The insulating layer has a process working area, the area of ​​which occupies 2% to 50% of the total area of ​​the insulating layer. The LEDs are embedded in the insulating layer and arranged around the process working area. The circuit layer is embedded in the insulating layer and electrically connects to the LEDs. The bonding pads are disposed beneath the insulating layer and electrically connect to the circuit layer. The light conversion layer is disposed on the insulating layer. In top view, the process working area overlaps with the geometric center of the LED packaging structure.
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Claims

1. A light-emitting diode (LED) packaging structure, comprising: An insulating layer having a process working area, wherein the area of ​​the process working area occupies 2% to 50% of the total area of ​​the insulating layer; a plurality of light-emitting diodes (LEDs) embedded in the insulating layer and arranged around the process working area; a circuit layer embedded in the insulating layer and electrically connected to the LEDs; a plurality of bonding pads disposed under the insulating layer and electrically connected to the circuit layer; and a light conversion layer disposed on the insulating layer, wherein, in a top view, the process working area overlaps with a geometric center of the LED package structure.

2. The light-emitting diode packaging structure as described in claim 1, wherein a light-emitting surface of each light-emitting diode is flush with an upper surface of the insulating layer.

3. The light-emitting diode packaging structure as described in claim 1 further includes an adhesive layer disposed between the light conversion layer and the light-emitting diodes.

4. The light-emitting diode packaging structure as claimed in claim 1, wherein each light-emitting diode has a plurality of electrodes disposed on a side opposite to the light conversion layer, wherein any two adjacent electrodes have a first distance between them, and any two adjacent bonding pads have a second distance between them, and the second distance is greater than the first distance.

5. The light-emitting diode packaging structure as described in claim 1, wherein each light-emitting diode has a thickness of 3 micrometers to 20 micrometers.

6. The light-emitting diode packaging structure as described in claim 1, wherein the insulating layer includes a first insulating layer and a second insulating layer located below the first insulating layer, the light-emitting diodes are embedded in the first insulating layer, and the circuit layer is embedded in the second insulating layer.

7. The light-emitting diode packaging structure as described in claim 6, wherein the first insulating layer or the second insulating layer reflects the light emitted by the light-emitting diodes, and the reflectivity of the first insulating layer or the second insulating layer is at least greater than 80%.

8. The light-emitting diode package structure as described in claim 1, wherein the light-emitting diodes are spaced apart and symmetrically arranged on any two opposite sides of the process working area.

9. The light-emitting diode packaging structure as described in claim 1, wherein each light-emitting diode has a first thickness, the light conversion layer has a second thickness, and the second thickness is greater than the first thickness and less than 200 micrometers.

10. The light-emitting diode packaging structure as described in claim 1, wherein the light conversion layer continuously covers the light-emitting diodes.

Citation Information

Patent Citations

  • Light emitting device package structure and manufacturing method thereof

    CN105098027A

  • Fan-out LED device packaging method combining film stretching and laser-assisted preparation

    CN116598388A

  • Light-emitting diode packaging body and light-emitting device

    CN119092616A

  • Micro light-emitting diode package structure

    TW202318624A