Photothermal conversion components

Abstract

The objective of this invention is to provide a photothermal conversion member that does not affect light transmission and reception and can be heated with low power or without the use of dedicated heating power. As a solution, one embodiment of this invention comprises a photothermal conversion member having an infrared-transmitting substrate and an infrared-absorbing and heating layer supported by the substrate. In the photothermal conversion member, the infrared-absorbing and heating layer may have a patterned portion when viewed from the normal direction of the substrate. In the photothermal conversion member, the infrared-absorbing and heating layer may have a second portion comprising nickel and phosphorus oxides forming protrusions.

Description

[Technical Field]

[0001] This invention relates to photothermal conversion components. [Previous Technology]

[0002] Patent Document 1 discloses an outdoor LED snow-melting machine that can quickly and reliably suppress the adhesion and freezing of snow, ice, and frost, and achieve good recognizability. This LED machine is an outdoor LED machine that uses LED lamps as lighting fixtures and mixes infrared light into the illumination light emitted by the light-emitting surface of the LED lamps.

[0003] Patent Document 2 discloses a window film for attaching to a window surface, which is easy to install and can promote the vaporization of condensation, accelerating the drying of the window surface. This window film has a hydrophilic outer surface and a heating layer containing a near-infrared absorbing material that absorbs near-infrared radiation to generate heat. [Prior Art Documents] [Patent Documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2018-049467 [Patent Document 2] Japanese Patent Application Publication No. 2019-070247 [Summary of the Invention]

[0005] [Problem to be Solved by the Invention] In devices that process light signals, such as light-emitting devices or light-receiving devices, the presence of objects blocking the light in the light path can hinder their function. For example, in cold regions, if frost forms on the surface of the device (such as an outer cover) in the light path, it will affect the transmission and reception of light. Therefore, as a means of preventing frost formation, an external resistance heater is installed inside the device. However, external resistance heaters require a large amount of electricity. In order to achieve low power consumption, a low-power heating method or a heating method that does not require dedicated heating power is desired.

[0006] The present invention aims to provide a photothermal conversion component that does not affect light transmission and reception, and is capable of heating with low power or without the use of dedicated heating power. [Means for solving the problem]

[0007] One embodiment of the present invention comprises a photothermal conversion member having an infrared-transmitting substrate and an infrared-absorbing heating layer supported by the substrate. According to this configuration, infrared light reaching the infrared-absorbing heating layer, or light passing through the substrate, is absorbed by the infrared-absorbing heating layer. Due to the absorption of this infrared light, the infrared-absorbing heating layer heats up with low power or without the use of dedicated heating power.

[0008] In the above-described photothermal conversion member, the infrared absorbing and heating layer may have a patterned portion when viewed from the normal direction of the substrate. In this case, when viewed from the normal direction of the substrate, the substrate may be exposed in the non-patterned portion of the area where the patterned infrared absorbing and heating layer is not disposed. As a result, the patterned portion of the infrared absorbing and heating layer will heat up, and the light transmittance of the non-patterned portion will increase.

[0009] In the above-mentioned photothermal conversion component, the infrared absorption heating layer preferably has a plurality of protrusions that protrude from the substrate direction.

[0010] In the above-mentioned photothermal conversion component, the infrared absorption heating layer system may have a first part containing nickel and phosphorus, and a second part containing nickel and phosphorus oxides constituting the aforementioned protrusion.

[0011] In the above-described photothermal conversion member, the first part is located closer to the substrate side than the second part, and the second part side surface of the first part may have an uneven structure. In this case, the second part may be configured to protrude further from the portion of the first part that protrudes from the side opposite to the substrate side to the side opposite to the substrate side.

[0012] In the above-mentioned photothermal conversion component, the second part is a modified material of the first part, and the second part can be continuously formed on the first part.

[0013] In the above-described photothermal conversion component, the substrate can be a cover plate disposed between the light-receiving optical system and the light-projecting optical system, where infrared light is projected from the light-receiving optical system. Thus, an infrared absorbing heating layer is disposed on the cover plate of the light-receiving optical system or the light-projecting optical system, and the cover plate is heated by the heat absorbed by the infrared absorbing heating layer. [Effects of the Invention]

[0014] According to the present invention, a photothermal conversion component can be provided that does not affect the transmission and reception of light and can be heated with low power or without the use of dedicated heating power.

Implementation Method

[0016] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, in the following description, the same elements will be given the same reference numerals, and descriptions of elements that have already been described will be appropriately omitted.

[0017] (Structure of Photothermal Conversion Component) Figures 1A and 1B are schematic cross-sectional views illustrating the structure of the photothermal conversion component related to this embodiment. The photothermal conversion component 1 of this embodiment comprises a substrate 40 with infrared transmittance and an infrared absorbing and heating layer 10 supported by the substrate 40. The substrate 40 can be a flexible thin film or a rigid substrate. Materials for the substrate 40 include, for example, resin materials such as PC (polycarbonate), PE (polyethylene), and PET (polyethylene terephthalate), or glass. Because the substrate 40 is flexible, the photothermal conversion component 1 can be easily configured in curved sections.

[0018] The infrared absorbing and heating layer 10 is a layer supported on the substrate 40 and generates heat by absorbing infrared radiation. The infrared absorbing and heating layer 10 can be, for example, a compound of an inorganic metallic material (e.g., an oxide). The inorganic metallic material compound is preferably a nickel-based compound (an oxide compound of nickel-phosphorus electroless plating, an oxide of nickel-phosphorus alloy, nickel oxide, etc.). The infrared absorbing and heating layer 10 is a material that can effectively absorb infrared radiation and generate heat; the higher the emissivity, the better, and the lower the reflectivity, the better. The reflectivity is, for example, preferably below 5%.

[0019] In the photothermal conversion member 1 where the infrared absorbing heating layer 10 is supported on the substrate 40, infrared rays reaching the infrared absorbing heating layer 10 or passing through the substrate 40 are absorbed by the infrared absorbing heating layer 10. Through the absorption of infrared rays by the infrared absorbing heating layer 10, the infrared absorbing heating layer 10 will generate heat with low power or without using dedicated heating power, and its heat will be transferred to the substrate 40.

[0020] The infrared absorbing and heating layer 10 can be uniformly disposed on the surface of the substrate 40, or it can be patterned as shown in FIG1B. When the infrared absorbing and heating layer 10 is uniformly disposed on the surface of the substrate 40, it is sufficient that the film thickness or composition can transmit light of a specific wavelength (e.g., infrared). When the infrared absorbing and heating layer 10 is patterned, a patterned portion PT and a non-patterned portion NPT are provided. The patterned infrared absorbing and heating layer 10 will be described later.

[0021] In the photothermal conversion component 1, in order to obtain the temperature rise caused by high-efficiency heating, the substrate 40 is preferably a material with low heat dissipation and low thermal conductivity, and the preferred thermal conductivity of the substrate 40 is below 0.4 W / mK. The substrate 40 must be a material that can transmit infrared light, and the higher the infrared transmittance, the better.

[0022] (Example of pattern) Figures 2A to 3B are schematic plan views of the pattern of the infrared absorbing heating layer. Figures 2A to 3B show plan views viewed from the normal direction of the substrate 40 (first direction: Z1-Z2 direction shown in Figures 1A and 1B).

[0023] FIG2A shows an example of a grid-like pattern. That is, this photothermal conversion member 1 has a patterned portion PT on the surface of the substrate 40 in which the infrared absorbing and heating layer 10 is provided in a grid pattern, and a non-patterned portion NPT in which the infrared absorbing and heating layer 10 is not provided or is different from the patterned portion PT.

[0024] The opening 10a of the grille is an example of the non-patterned part NPT. The wider the area of ​​the opening 10a, the more light is transmitted through the photothermal conversion member 1, but the less infrared radiation is absorbed by the infrared absorption and heating layer 10, and the less heat is generated. Conversely, the narrower the area of ​​the opening 10a, the less light is transmitted through the photothermal conversion member 1, but the more infrared radiation is absorbed by the infrared absorption and heating layer 10, and the more heat is generated.

[0025] Figure 2B shows an example of a dotted pattern. This photothermal conversion member 1 has a patterned portion PT on which a dotted infrared absorbing and heating layer 10 is provided on the surface of the substrate 40, and a non-patterned portion NPT where no infrared absorbing and heating layer 10 is provided. The dot shape of the patterned portion PT formed by the infrared absorbing and heating layer 10 can be circular, elliptical, or polygonal, such as a square. The wider the area of ​​the dotted patterned portion PT, the less light transmittance the photothermal conversion member 1 receives, but the more infrared radiation absorbed by the infrared absorbing and heating layer 10, and the more heat is generated. Conversely, the narrower the area of ​​the dotted patterned portion PT, the more light transmittance the photothermal conversion member 1 receives, but the less infrared radiation absorbed by the infrared absorbing and heating layer 10, and the less heat is generated.

[0026] Figure 3A shows an example of a concentric circle pattern. This photothermal conversion member 1 has a patterned portion PT on the surface of the substrate 40 where a plurality of infrared absorbing and heating layers 10 are provided in a concentric circle pattern, and a non-patterned portion NPT where no infrared absorbing and heating layers 10 are provided. The wider the area of ​​the concentric circle patterned portion PT, the less light transmittance the photothermal conversion member 1 receives, but the more infrared radiation is absorbed by the infrared absorbing and heating layers 10, and the more heat is generated. Conversely, the narrower the area of ​​the concentric circle patterned portion PT, the more light transmittance the photothermal conversion member 1 receives, but the less infrared radiation is absorbed by the infrared absorbing and heating layers 10, and the less heat is generated.

[0027] Figure 3B shows an example of an opening pattern. This photothermal conversion member 1 has a patterned portion PT on the surface of the substrate 40 where an infrared absorbing and heating layer 10 is provided, and a non-patterned portion NPT where no infrared absorbing and heating layer 10 is provided. An example of the non-patterned portion NPT is an opening 10b. In the example shown in Figure 3B, the shape of the opening 10b is circular, but it is not limited to this. Furthermore, the position of the opening 10b is not limited to the center of the substrate 40. The wider the area of ​​the opening 10b, the more light is transmitted through the photothermal conversion member 1, but the less infrared radiation is absorbed by the infrared absorbing and heating layer 10, and the less heat is generated. Conversely, the narrower the area of ​​the opening 10b, the less light is transmitted through the photothermal conversion member 1, but the more infrared radiation is absorbed by the infrared absorbing and heating layer 10, and the more heat is generated.

[0028] In any of the above patterns, the pattern shape is formed by the portion (patterned portion PT) where the infrared absorption and heating layer 10 is provided and the portion (non-patterned portion NPT) where it is not provided.

[0029] The non-patterned portion NPT can be the openings 10a and 10b where the infrared absorbing and heating layer 10 is not provided, or it can be the portion where the infrared absorbing and heating layer 10 is provided but the light transmittance of the infrared absorbing and heating layer 10 is less than that of the patterned portion PT. For example, the patterned portion PT and the non-patterned portion NPT can also be formed by the difference in the thickness or the difference in the layer composition of the infrared absorbing and heating layer 10.

[0030] The infrared absorbing and heating layer 10 can be patterned, and the infrared absorption (heating) performance can be adjusted by the area ratio of the patterned portion PT to the non-patterned portion NPT. More specifically, by adjusting the area ratio of the patterned portion PT to the non-patterned portion NPT, and by adjusting their respective shapes and arrangements, the shape of the product, the heating efficiency, and the light and infrared transmittance according to the required characteristics can be set. In addition, a protective layer or a heat insulation layer can be added to the surface of the infrared absorbing and heating layer 10, thereby further improving and optimizing the temperature rise characteristics, transmittance, and weather resistance caused by heating.

[0031] (Structure of a photoelectric sensor) Figures 4A to 6B are schematic diagrams showing examples of the configuration of a photoelectric sensor. The photoelectric sensor 100A shown in Figure 4A includes a light-emitting optical system 110, a light-receiving optical system 120, and a photothermal conversion member 1 disposed between the light-emitting optical system 110 and the light-receiving optical system 120. The photoelectric sensor 100A is a transmissive photoelectric sensor that detects the presence of an object between the light-emitting optical system 110 and the light-receiving optical system 120 by determining whether the light (e.g., infrared light) emitted from the light-emitting optical system 110 to the light-receiving optical system 120 is blocked.

[0032] In the photoelectric sensor 100A, the photothermal conversion member 1 is mounted on a cover plate (photoelectric sensor cover plate on the side of the photoelectric sensor on the side of the photoelectric sensor 120) near the side of the photoelectric receiving optical system 110. The photothermal conversion member 1 is mounted on the back side of the cover plate 130 (downstream of the direction of light travel from the photoelectric receiving optical system 110) via an adhesive member 140 such as OCA (optically transparent adhesive). The infrared absorption and heating layer 10 of the photothermal conversion member 1 is patterned. The infrared absorption and heating layer 10 of the photothermal conversion member 1 is preferably disposed on the side of the photoelectric receiving optical system 110 (upstream of the direction of light travel).

[0033] In this photoelectric sensor 100A, light emitted from the projection optics 110 passes through the cover plate 130 and irradiates the photothermal conversion member 1. A portion of the irradiated light is absorbed by the patterned portion PT of the infrared absorption heating layer 10 of the photothermal conversion member 1, thereby generating heat. The heat generated by the patterned portion PT of the infrared absorption heating layer 10 is transferred to the cover plate 130, thereby heating the cover plate 130. Heating the cover plate 130 suppresses condensation on its surface. Infrared light transmitted through the non-patterned portion NPT of the infrared absorption heating layer 10 passes through the substrate 40 and reaches the light-receiving optics 120.

[0034] In the photoelectric sensor 100A, infrared radiation is absorbed by the patterned portion PT of the infrared absorption heating layer 10 of the photothermal conversion member 1, allowing heating without the use of dedicated heating electricity, thereby heating the cover plate 130. Furthermore, the infrared radiation in the light emitted from the projection optics system 110 is absorbed by the non-patterned portion NPT of the patterned infrared absorption heating layer 10 and the substrate 40, thus not affecting the reception of infrared radiation by the light-receiving optics system 120. Therefore, while suppressing condensation on the cover plate 130, the function of a transmissive photoelectric sensor can be achieved.

[0035] The photoelectric sensor 100B shown in FIG4B includes a light-emitting optical system 110 for emitting light, a light-receiving optical system 120 for receiving light, and a photothermal conversion member 1 disposed between the light-emitting optical system 110 and the light-receiving optical system 120. The photoelectric sensor 100B is the same as the photoelectric sensor 100A, and is a transmissive photoelectric sensor that detects whether there is an object between the light-emitting optical system 110 and the light-receiving optical system 120 by determining whether the light (e.g., infrared light) emitted from the light-emitting optical system 110 to the light-receiving optical system 120 is blocked.

[0036] In the photoelectric sensor 100B, the photothermal conversion member 1 is mounted on a cover plate (photoelectric sensor cover plate on the side of the photoelectric sensor on the side of the photoelectric sensor 120) near the side of the photoelectric receiving optical system 110. The photothermal conversion member 1 is mounted on the back side of the cover plate 130 via an adhesive member 140 such as an OCA. The infrared absorption and heating layer 10 of the photothermal conversion member 1 is not patterned and has the same configuration. The infrared absorption and heating layer 10 of the photothermal conversion member 1 is preferably disposed on the side of the photoelectric receiving optical system 110 (upstream side in the direction of light travel).

[0037] In this photoelectric sensor 100B, light emitted from the projection optics 110 passes through the cover plate 130 and irradiates the photothermal conversion member 1. A portion of the infrared light in the irradiated light is absorbed by the infrared absorption and heating layer 10 of the photothermal conversion member 1, thereby generating heat. The heat generated by the infrared absorption and heating layer 10 is transferred to the cover plate 130, thereby heating the cover plate 130. Through the heating of the cover plate 130, condensation on the surface of the cover plate 130 can be suppressed. The infrared absorption and heating layer 10 is configured to be partly transmissible to infrared light. The infrared light transmissible to the infrared absorption and heating layer 10 then passes through the substrate 40 and reaches the light-receiving optics 120.

[0038] In the photoelectric sensor 100B, by absorbing infrared radiation through the infrared absorption heating layer 10 of the photothermal conversion member 1, heat can be generated without the use of dedicated heating electricity, thereby heating the cover plate 130. Furthermore, in the light emitted from the projection optics system 110, the infrared system passes through the same infrared absorption heating layer 10 and substrate 40, thus not affecting the reception of infrared radiation by the light-receiving optics system 120. Therefore, while suppressing condensation on the cover plate 130, the function of a transmissive photoelectric sensor can be performed.

[0039] The photoelectric sensor 100C shown in FIG5A includes a light-emitting optical system 110 that emits infrared light, a light-receiving optical system 120 that receives light from the light-emitting optical system 110, a photothermal conversion member 1 disposed between the light-emitting optical system 110 and the light-receiving optical system 120, and an infrared emitter 150. The photoelectric sensor 100C is the same as the photoelectric sensor 100A, and is a transmissive photoelectric sensor that detects whether there is an object between the light-emitting optical system 110 and the light-receiving optical system 120 by determining whether the light (e.g., infrared light) emitted from the light-emitting optical system 110 to the light-receiving optical system 120 is blocked.

[0040] In the photoelectric sensor 100C, the photothermal conversion member 1 is mounted on a cover plate (photoelectric sensor cover plate on the side of the photoelectric sensor on the side of the photoelectric sensor 120) near the side of the photoelectric receiving optical system 110. The photothermal conversion member 1 is mounted on the back side of the cover plate 130 via an adhesive member 140 such as an OCA. The infrared absorption and heating layer 10 of the photothermal conversion member 1 is patterned. The infrared absorption and heating layer 10 of the photothermal conversion member 1 is preferably disposed on the side of the photoelectric receiving optical system 110 (upstream side in the direction of light travel). Furthermore, the infrared emitter 150 is configured to irradiate infrared light onto the infrared absorption and heating layer 10 from the substrate 40 side of the photothermal conversion member 1.

[0041] In this photoelectric sensor 100C, light emitted from the projection optics 110 passes through the cover plate 130 and irradiates the photothermal conversion member 1. A portion of the infrared light in the irradiated light is absorbed by the infrared absorption and heating layer 10 of the photothermal conversion member 1, thereby generating heat. Furthermore, in the photoelectric sensor 100C, infrared light irradiated from the infrared emitter 150 passes through the substrate 40 of the photothermal conversion member 1 and irradiates the infrared absorption and heating layer 10. As the infrared emitter 150, a low-power LED light source is preferably used. The infrared light irradiated from the infrared emitter 150 is absorbed by the infrared absorption and heating layer 10, thereby further promoting heat generation.

[0042] The heat generated by the infrared absorption heating layer 10 is transferred to the cover plate 130, thereby heating the cover plate 130. The heating of the cover plate 130 can suppress condensation on the surface of the cover plate 130. The infrared rays transmitted through the infrared absorption heating layer 10 pass through the substrate 40 and reach the light-receiving optical system 120.

[0043] In the photoelectric sensor 100C, the infrared radiation emitted from the projection optics 110 is absorbed by the infrared absorption heating layer 10 of the photothermal conversion member 1, allowing for heating without the use of dedicated heating power. Furthermore, the infrared radiation irradiated by the low-power infrared emitter 150 further promotes the heating of the infrared absorption heating layer 10. Thus, the cover plate 130 can be reliably heated. Moreover, the infrared radiation in the light emitted from the projection optics 110 passes through the patterned infrared absorption heating layer 10 and the substrate 40, thus not affecting the reception of infrared radiation by the light-receiving optics 120. Therefore, while suppressing condensation on the cover plate 130, the function of a transmissive photoelectric sensor can be achieved.

[0044] The photoelectric sensor 100D shown in FIG5B includes a light-emitting optical system 110, a light-receiving optical system 120, and a photothermal conversion member 1 disposed between the light-emitting optical system 110 and the light-receiving optical system 120. The photoelectric sensor 100D differs from the photoelectric sensor 100C in FIG5A in that the infrared absorption and heating layer 10 of the photothermal conversion member 1 is disposed closer to the light-receiving optical system 120 (downstream of the light travel direction) than the substrate 40, and closer to the low-power infrared emitter 150.

[0045] In the photoelectric sensor 100D, by placing the patterned infrared absorption heating layer 10 of the photothermal conversion member 1 closer to the infrared emitter 150 than the substrate 40, compared with the photoelectric sensor 100C of FIG5A, the infrared rays irradiated from the low-power infrared emitter 150 can more effectively promote the heating of the patterned portion PT of the infrared absorption heating layer 10.

[0046] Furthermore, in the photoelectric sensor 100D, by placing the patterned infrared absorption and heating layer 10 of the photothermal conversion member 1 closer to the light-receiving optical system 120 than the substrate 40, infrared rays emitted from the projection optical system 110 sequentially pass through the substrate 40 and the unpatterned portion NPT of the infrared absorption and heating layer 10, thus not affecting the reception of infrared rays by the light-receiving optical system 120. Also, infrared rays emitted from the projection optical system 110 sequentially irradiate the substrate 40 and the patterned portion PT of the infrared absorption and heating layer 10. Therefore, compared to the photoelectric sensor 100C in FIG. 5A, the heating caused by the heating of the patterned portion PT of the infrared absorption and heating layer 10 can be suppressed. Therefore, the heat generated continuously by the infrared absorption and heating layer 10 can be reduced, and the heating of the infrared absorption and heating layer 10 can be relatively increased and adjusted by the infrared rays irradiated by the low-power infrared emitter 150. Therefore, while suppressing condensation on the cover plate 130 due to seasonal changes, it can also function as a transparent photoelectric sensor.

[0047] The photoelectric sensor 100E shown in FIG5C includes a light-emitting optical system 110, a light-receiving optical system 120, and a photothermal conversion member 1 disposed between the light-emitting optical system 110 and the light-receiving optical system 120. The photoelectric sensor 100E is the same as the photoelectric sensor 100A, and is a transmissive photoelectric sensor that detects whether there is an object between the light-emitting optical system 110 and the light-receiving optical system 120 by determining whether the light (e.g., infrared light) emitted from the light-emitting optical system 110 to the light-receiving optical system 120 is blocked.

[0048] In the photoelectric sensor 100E, a cover plate 130 (a cover plate for a photoelectric sensor on the side of the light-receiving optical system 110) disposed in the light-receiving optical system 120 is used as a substrate 40, and an infrared absorbing and heating layer 10 is mounted on the back side of the cover plate 130 (the side opposite to the light-receiving optical system 110). The infrared absorbing and heating layer 10 is patterned.

[0049] The infrared absorbing and heating layer 10 can be formed directly on the surface of the cover plate 130 as a substrate 40, or it can be formed by transfer printing. When formed by transfer printing, the infrared absorbing and heating layer 10 is prepared to be formed and patterned on the release material, and then the infrared absorbing and heating layer 10 is transferred only to the surface of the cover plate 130, and then the release material is peeled off.

[0050] In this photoelectric sensor 100E, light emitted from the projection optics 110 passes through the cover plate 130 and irradiates the photothermal conversion member 1. A portion of the infrared light in the irradiated light is absorbed by the infrared absorption and heating layer 10 of the photothermal conversion member 1, thereby generating heat. The heat generated by the infrared absorption and heating layer 10 is transferred to the cover plate 130, thereby heating the cover plate 130. Through the heating of the cover plate 130, condensation on the surface of the cover plate 130 can be suppressed. The infrared light passing through the infrared absorption and heating layer 10 reaches the light-receiving optics 120.

[0051] In the photoelectric sensor 100E, by absorbing infrared radiation through the infrared absorption heating layer 10 of the photothermal conversion member 1, heat can be generated without the use of dedicated heating electricity, thereby heating the cover plate 130. Furthermore, since the cover plate 130 is used as the substrate 40, compared to the case where the cover plate 130 and the substrate 40 are separate entities, infrared radiation attenuation is suppressed, and a thinner profile can be achieved. Infrared radiation in the light emitted from the projection optics 110 passes through the non-patterned portion NPT of the patterned infrared absorption heating layer 10, thus not affecting the reception of infrared radiation by the light-receiving optics 120. Therefore, while suppressing condensation on the cover plate 130, the function of a transmissive photoelectric sensor can be performed. However, in the photoelectric sensor 100E, the patterned infrared absorption heating layer 10 is formed on the surface of the cover plate 130, but an unpatterned uniform infrared absorption heating layer 10 can also be formed directly or through transfer on the surface of the cover plate 130 in the same manner as described above.

[0052] The photoelectric sensor 100F shown in FIG6A includes a light-emitting optical system 110 for emitting light, a light-receiving optical system 120 for receiving light, a first photothermal conversion member 1A disposed between the light-emitting optical system 110 and the light-receiving optical system 120, and a second photothermal conversion member 1B disposed between the first photothermal conversion member 1A and the light-receiving optical system 120. The photoelectric sensor 100F is the same as the photoelectric sensor 100A, and is a transmissive photoelectric sensor that detects whether there is an object between the light-emitting optical system 110 and the light-receiving optical system 120 by determining whether the light (e.g., infrared light) emitted from the light-emitting optical system 110 to the light-receiving optical system 120 is blocked.

[0053] In the photoelectric sensor 100F, the first photothermal conversion member 1A is mounted on the first cover plate 130A (the cover plate for the photoelectric sensor of the projection optical system 110) disposed on the side of the light receiving optical system 120 in the projection optical system 110. The first photothermal conversion member 1A is mounted on the back side of the first cover plate 130A via an adhesive member 140 such as OCA. The infrared absorption and heating layer 10 of the first photothermal conversion member 1A is patterned. The infrared absorption and heating layer 10 of the first photothermal conversion member 1A is preferably disposed on the projection optical system 110 side (upstream side in the direction of light travel).

[0054] Furthermore, in the photoelectric sensor 100F, the second photothermal conversion member 1B is mounted on the second cover plate 130B (the cover plate for the photoelectric sensor on the side of the photoelectric sensor on the side of the photoelectric sensor 120) disposed on the side of the photoelectric receiving optical system 110 in the photoelectric receiving optical system 120. The second photothermal conversion member 1B is mounted on the back side of the second cover plate 130B (downstream side of the direction of light travel emitted from the photoelectric receiving optical system 110) via an adhesive member 140 such as an OCA. The infrared absorption and heating layer 10 of the second photothermal conversion member 1B is patterned. The infrared absorption and heating layer 10 of the second photothermal conversion member 1B is preferably disposed on the side of the photoelectric receiving optical system 110 (upstream side of the direction of light travel).

[0055] In this photoelectric sensor 100F, light emitted from the projection optics 110 illuminates the first photothermal conversion member 1A. A portion of the infrared radiation in the illuminated light is absorbed by the infrared absorption and heating layer 10 of the first photothermal conversion member 1A, thereby generating heat. The heat generated by the infrared absorption and heating layer 10 of the first photothermal conversion member 1A is transferred to the first cover plate 130A (the cover plate for the photoelectric sensor on the projection optics 110 side), thereby heating the first cover plate 130A. Through the heating of the first cover plate 130A, condensation on the surface of the first cover plate 130A can be suppressed. The light passing through the infrared absorption and heating layer 10 of the first photothermal conversion member 1A passes through the substrate 40 and the first cover plate 130A and is directed toward the light-receiving optics 120.

[0056] Light rays directed toward the light-receiving optical system 120 pass through the second cover plate 130B (the cover plate for the photoelectric sensor on the side of the light-receiving optical system 120) and irradiate the second photothermal conversion member 1B. A portion of the infrared rays in the irradiated light rays is absorbed by the infrared absorption and heating layer 10 of the second photothermal conversion member 1B, thereby generating heat. The heat generated by the infrared absorption and heating layer 10 is transferred to the second cover plate 130B, thereby heating the second cover plate 130B. Through the heating of the second cover plate 130B, condensation on the surface of the second cover plate 130B can be suppressed. The infrared rays passing through the infrared absorption and heating layer 10 then pass through the substrate 40 to reach the light-receiving optical system 120.

[0057] In the photoelectric sensor 100F, a portion of the infrared light emitted from the projection optics 110 can heat the infrared absorption heating layers 10 of the first photothermal conversion member 1A and the second photothermal conversion member 1B. Therefore, the first cover plate 130A and the second cover plate 130B can be heated without electricity. Furthermore, the infrared light emitted from the projection optics 110 passes through the patterned infrared absorption heating layer 10 and the substrate 40, thus not affecting the reception of infrared light by the light-receiving optics 120. Therefore, while suppressing condensation on the first cover plate 130A and the second cover plate 130B, the function of a transmissive photoelectric sensor can be achieved.

[0058] The photoelectric sensor 100G shown in FIG6B includes a light-emitting optical system 110 for emitting light, a light-receiving optical system 120 for receiving light, and a photothermal conversion member 1 disposed between the light-emitting optical system 110 and the light-receiving optical system 120. The photoelectric sensor 100G is the same as the photoelectric sensor 100A, and is a transmissive photoelectric sensor that detects whether there is an object between the light-emitting optical system 110 and the light-receiving optical system 120 by determining whether the light (e.g., infrared light) emitted from the light-emitting optical system 110 to the light-receiving optical system 120 is blocked.

[0059] In the photoelectric sensor 100G, the photothermal conversion member 1 is mounted on a cover plate 130 (the cover plate for the photoelectric sensor on the side of the projection optical system 110) disposed on the side of the receiving optical system 120 in the projection optical system 110. The photothermal conversion member 1 is mounted on the back side of the cover plate 130 (upstream of the direction of light travel from the projection optical system 110) via an adhesive member 140 such as an OCA. The infrared absorption and heating layer 10 of the photothermal conversion member 1 is patterned. The infrared absorption and heating layer 10 of the photothermal conversion member 1 is preferably disposed on the projection optical system 110 side (upstream of the direction of light travel).

[0060] In this photoelectric sensor 100G, light emitted from the projection optics 110 illuminates the photothermal conversion member 1. A portion of the infrared light in the illuminated light is absorbed by the infrared absorption and heating layer 10 of the photothermal conversion member 1, thereby generating heat. The heat generated by the infrared absorption and heating layer 10 is transferred to the cover plate 130, thereby heating the cover plate 130. Through the heating of the cover plate 130, condensation on the surface of the cover plate 130 can be suppressed. The light passing through the infrared absorption and heating layer 10 of the photothermal conversion member 1 passes through the substrate 40 and the cover plate 130, and is directed toward the light-receiving optics 120.

[0061] In the photoelectric sensor 100G, by absorbing infrared radiation through the infrared absorption heating layer 10 of the photothermal conversion member 1, heat can be generated without the use of dedicated heating electricity, thereby heating the cover plate 130. Furthermore, the infrared radiation in the light emitted from the projection optics 110 passes through the patterned infrared absorption heating layer 10 and the substrate 40, thus not affecting the reception of infrared radiation by the light-receiving optics 120. Therefore, while suppressing condensation on the cover plate 130, the function of a transmissive photoelectric sensor can be performed.

[0062] Thus, by applying the photothermal conversion component 1 related to this embodiment to the photoelectric sensors 100A-100G, heating methods that require a large amount of electricity to suppress condensation, frost, and snow accumulation, such as those used in resistance heaters, are no longer needed, nor are the associated wiring harnesses and power supplies required. Furthermore, snow shelters to prevent snow accumulation are also unnecessary. Therefore, low power consumption, structural simplification, and improved design are achieved for the photoelectric sensors 100A-100G. Additionally, the infrared absorption heating layer 10 can also be conductive. Therefore, the infrared absorption heating layer 10 can be energized within a low power consumption range, allowing it to function as a resistance heater as an auxiliary heating method.

[0063] (Structure of the infrared absorbing heating layer) Figures 7A and 7B are schematic cross-sectional views illustrating the structure of the infrared absorbing heating layer. Figure 7B shows an enlarged schematic cross-sectional view of part A in Figure 7A.

[0064] In Figures 7A and 7B, the substrate 40 is a plate-shaped member with its thickness direction in the Z direction and its length direction in the X direction. The infrared absorbing and heating layer 10 is disposed on one side (Z1 side) of the main surface of the substrate 40. The infrared absorbing and heating layer 10 in Figure 7A has a patterned portion PT and a non-patterned portion NPT. Figure 7B shows an enlarged portion A of the patterned portion PT of the infrared absorbing and heating layer 10. The infrared absorbing and heating layer 10 has a first portion 20 that is film-shaped and close to the substrate 40, and a second portion 30 located on one side (Z1 side) of the first portion 20 away from the substrate 40. The infrared absorbing and heating layer 10 has a plurality of protrusions C that protrude from the substrate 40 direction (Z1 direction).

[0065] As shown in Figure 7B, the surface shape of the patterned portion PT of the infrared absorbing and heating layer 10, on the second part 30 side (Z1 side), is a convex-independent type. In the convex-independent type surface shape, the basic structure consists of a plurality of independently protruding convex portions C arranged in the in-plane direction, with the bottom B surrounding each convex portion C. The front end of the convex portion C on the Z1 side is a sharp point S.

[0066] Since the surface shape of the infrared absorbing heating layer 10 is an independent convex type, the light irradiating the surface of the second part 30 side (Z1 side) of the infrared absorbing heating layer 10 will enter the gap between adjacent convex parts C and be absorbed on the side or bottom B of the convex part C, making it difficult to return to the irradiated light side (Z1 side). Therefore, the infrared absorbing heating layer 10 has good light absorption function. Specifically, when the main surface of the second part 30 side (Z1 side) of the infrared absorbing heating layer 10 is irradiated with light in the wavelength range of 0.8μm to 2.0μm (hereinafter also referred to as "NIR: near-infrared"), the total reflectance (average NIR total reflectance Rt) easily reaches less than 2%.

[0067] Because the infrared absorbing heating layer 10 has such light absorption function, in one embodiment, the average NIR total reflectance Rt on the infrared absorbing heating layer 10 side is 2% or less. The average NIR total reflectance Rt of the infrared absorbing heating layer 10 related to this embodiment is preferably 1% or less in some cases, more preferably 0.7% or less in others, and particularly preferably 0.5% or less in still others.

[0068] Furthermore, since the surface of the second portion 30 side (Z1 side) of the infrared absorbing heating layer 10 has a protruding independent shape, the possibility of through holes being generated in the infrared absorbing heating layer 10 in the lamination direction (Z direction) of the first portion 20 and the second portion 30 is low. Therefore, it is not necessary to excessively increase the thickness of the first portion 20, and the heat capacity of the infrared absorbing heating layer 10 can be kept at a low level. Therefore, the infrared absorbing heating layer 10 can have a photothermal conversion function (heating function) based on excellent light absorption function and a rapid heating function based on low heat capacity. The infrared absorbing heating layer 10 can be used as a light absorption component, a photothermal conversion component, a heating component, or a heat collection component for photothermal conversion heating limited to the patterned portion PT.

[0069] Part 1, 20, may include a nickel-phosphorus plating layer. When manufacturing an infrared absorbing and heating layer 10 containing a chemically modified nickel-phosphorus plating layer, the phosphorus concentration of the nickel-phosphorus plating layer in Part 1, 20, may affect the surface shape of Part 1, 20, and the shape of Part 2, 30. The average thickness of Part 1, 20, may be 6 μm or less. The average thickness of Part 1, 20, directly affects the heat capacity of the infrared absorbing and heating layer 10, and therefore may affect the thermal conductivity and temperature rise / fall response of the infrared absorbing and heating layer 10 after photothermal conversion. In the infrared absorbing and heating layer 10 related to this embodiment, since the average thickness of Part 1, 20, may be 6 μm or less, the infrared absorbing and heating layer 10 can have good thermal conductivity and temperature rise / fall response after photothermal conversion.

[0070] Part 2, 30 may contain nickel and phosphorus, in which case the phosphorus content is preferably 4.5% by mass or more and 7% by mass or less. In a preferred example, Part 2, 30 includes a nickel-phosphorus plating modification portion that is continuous with Part 1, 20. When Part 2, 30 includes a nickel-phosphorus plating modification portion that is continuous with Part 1, 20, Part 1, 20, and Part 2, 30 are less likely to peel off, and the decrease in light absorption function or photothermal conversion function (heating function) based on light absorption function is suppressed. Furthermore, even if there is a difference in the coefficient of thermal expansion between Part 1, 20, and Part 2, 30, since Part 1, 20, and Part 2, 30 are of continuous construction, peeling promotion between Part 1, 20, and Part 2, 30 due to the difference in coefficient of thermal expansion is less likely to occur. The average thickness of Part 2, 30 may be 2 μm or less. From the viewpoint of miniaturization and thinning of the infrared absorption heating layer 10, a smaller thickness of the infrared absorption heating layer 10 is preferable. (For example, it is effective for applications involving small machines such as optical waveguides or MEMS.)

[0071] Hereinafter, the structure of the patterned portion PT of the infrared absorption heating layer 10 will be described more specifically using a manufacturing example (manufacturing example 1) of a photothermal conversion member 1 having an infrared absorption heating layer 10. FIG7C is a diagram showing a secondary electron image (surface observation image 1) obtained by observing the second part of the main surface of the infrared absorption heating layer of the photothermal conversion member related to manufacturing example 1 of the present invention from the normal direction of the main surface using a scanning electron microscope. FIG7D is a diagram showing a secondary electron image obtained by observing the second part of the main surface of the infrared absorption heating layer of the photothermal conversion member related to manufacturing example 1 (the present invention) from the oblique direction of the normal direction of the main surface using a scanning electron microscope. FIG7E is a diagram showing a cross-section of the photothermal conversion member related to manufacturing example 1 (the present invention) and a secondary electron image obtained by observing it using a scanning electron microscope. FIG7F is a diagram of FIG7E with added symbols showing shape features.

[0072] The photothermal conversion component 1 related to this manufacturing example is manufactured as follows. First, nickel impact plating is performed on a stainless steel substrate 40 to form an impact plating layer (base layer 21). Then, a nickel-phosphorus electroless plating layer is formed using a nickel-phosphorus electroless plating solution with a different composition. The component thus obtained is immersed in an acidic mixed solution (liquid temperature: about 30°C) containing hydrogen peroxide water (approximately 1 mol / dm3) and copper ions (approximately 0.1 mol / dm3) with a pH of less than 1 for 4 to 5 minutes to modify the nickel-phosphorus electroless plating layer. In this way, a main part 22 having a first part 20 based on the unmodified nickel-phosphorus electroless plating layer and an infrared absorbing and heating layer 10 having a second part 30 formed through modification is obtained. However, the electroless plating solution is diluted with pure water.

[0073] The infrared absorption and heating layer 10 of the photothermal conversion member 1 related to this manufacturing example has the cross-sectional structure shown in FIG7E. Specifically, as part of the first part 20 of the infrared absorption and heating layer 10, the main part 22 of the first part 20 located on the nickel impact plating layer (base layer 21) that is provided in contact with the substrate 40 is composed of a nickel-phosphorus electroless plating layer provided on the nickel impact plating layer (base layer 21), and the second part 30 is formed by chemical modification (modified part) using the nickel-phosphorus plating layer constituting the main part 22 as a raw material. Therefore, the second part 30 is continuous with the first part 20 (main part 22).

[0074] Furthermore, the main part 22 of Part 1 20 is a nickel-phosphorus alloy, and the modified part of Part 2 30 contains an oxide of a nickel-phosphorus alloy. Both Part 1 20 and Part 2 30 contain nickel-phosphorus, thus providing good adhesion and preventing peeling of Part 1 20 and Part 2 30 due to differences in thermal expansion rates or external forces. Moreover, there is no need to excessively increase the thickness of the infrared absorption and heating layer 10, especially the thickness of Part 1 20, without having an excessively deep recess. Even if the infrared absorption and heating layer 10 or Part 2 30 is thinned, a good oxide composition and shape can be obtained, providing efficient light absorption and photothermal conversion functions.

[0075] As shown in Figures 7C and 7D, the infrared absorption and heating layer 10 of the photothermal conversion member 1 of this manufacturing example has a surface shape on the second part 30 side that is an independent protrusion type. Specifically, the surface shape on the second part 30 side has a basic structure in which a plurality of independently protruding protrusions are arranged in the in-plane direction, and the bottom surrounds each protrusion. Furthermore, as shown in the cross-sectional view of Figure 7E, the Z1 side (second part 30 side) surface of the first part 20 has an uneven structure, and the second part 30 is configured such that the portion protruding from the first part 20 toward the Z1 side (opposite to the substrate 40 side) further protrudes toward the Z1 side.

[0076] This structure will be described in detail with reference to FIG7F. In the cross-sectional view of FIG7F, the Z1 side surface of the first part 20 of the infrared absorbing heating layer 10 is represented by a series of raised lines, with a bottom B located on the Z2 side and a top T protruding from the bottom B toward the Z1 side. In this series of raised lines, the portion including the two bottoms B arranged along the X direction and the top T located between these bottoms B constitutes the protrusion P.

[0077] Then, in the cross-sectional view of FIG7F, a second part 30 with a sharp point S is further provided on the Z1 side of the protrusion P of the first part 20, making it protrude further, and the protrusions P of the first part 20 and the second part 30 constitute the convex portion C of the infrared absorption and heating layer 10. In the secondary electron image of the main surface of the infrared absorption and heating layer 10 shown in FIG7C and FIG7D, a plurality of these convex portions C are arranged in the in-plane direction (in the XY plane direction). The protrusion height (length in the Z direction) of these convex portions C is, as shown in FIG7F, including the protrusion height (length in the Z direction) of the second part 30 with the sharp point S and the protrusion height (length in the Z direction) of the protrusion P of the first part 20.

[0078] The Z1 side main surface of the infrared absorbing heating layer 10 with such a structure has a so-called moth-eye structure. Visible light incident on the infrared absorbing heating layer 10 from the Z1 side to the Z2 side will enter the gap between adjacent protrusions C and be absorbed by the wall of the protrusion C, making it difficult to reflect back to the Z1 side. Light with a wavelength range of 0.8 μm to 2.0 μm (also known as "NIR: near-infrared") and infrared light are also easily absorbed by the infrared absorbing heating layer 10. Therefore, the infrared absorbing heating layer 10 has both light absorption function and photothermal conversion function.

[0079] (Evaluation Samples) Produce photothermal conversion components for each evaluation sample in Table 1.

[0080]

[0081] Example 1: After forming an electroless nickel-phosphorus coating on a substrate 40 made of polycarbonate resin, the electroless nickel-phosphorus coating is modified to form an infrared absorbing and heating layer 10 having a first portion 20 having a plurality of protrusions P arranged in an array, and a second portion 30 further protruding from the protrusions P of the first portion 20. Furthermore, the infrared absorbing and heating layer 10 uses the pattern shown in FIG. 7C. Also, the pattern of the infrared absorbing and heating layer 10 uses the pattern in FIG. 2A, with a pattern aperture ratio of 50%.

[0082] Comparative Example 1: An infrared absorbing and heating layer 10, identical to that in Example 1, was formed on the entire surface of a substrate made of polycarbonate resin. The infrared absorbing and heating layer did not have any openings.

[0083] Comparative Example 2: The substrate is made of polycarbonate resin only and does not have an infrared absorbing heating layer 10.

[0084] (Characteristic evaluation of photothermal conversion component and functional evaluation as a transmissive photoelectric sensor) The evaluation samples of Examples, Comparative Example 1 and Comparative Example 2 were arranged between the light-emitting optical system 110 and the light-receiving optical system 120 as shown in FIG4A, and the characteristics of the infrared absorption heating layer 10 and its function as a transmissive photoelectric sensor (photoelectric sensor 100A) were evaluated. Table 2 shows the evaluation results.

[0085]

[0086] As shown in Table 2, at room temperature of 26°C, the infrared transmittance of the infrared absorbing heating layer 10 of Examples 1, Comparative Example 1, and Comparative Example 2 is 40%, 0%, and 90%, respectively. Furthermore, the infrared reflectance of the infrared absorbing heating layer 10 of Examples 1, Comparative Example 2, and Comparative Example 3%, 0.2%, and 10%, respectively. In Comparative Example 1, since the infrared absorbing heating layer 10 is formed on the entire surface of the substrate 40, the transmittance is 0% and the reflectance is 0.2%, demonstrating the characteristics of a single infrared absorbing heating layer 10. Comparative Example 2, however, is a substrate 40 without an infrared absorbing heating layer 10, thus demonstrating the transmittance and reflectance of the substrate 40. In Examples 2, the pattern aperture ratio of the infrared absorbing heating layer 10 is 50%, demonstrating the intermediate transmittance and reflectance between the single substrate 40 and the single infrared absorbing heating layer 10.

[0087] The infrared irradiation temperature shown in Table 2 refers to the temperature at which the infrared irradiation portion reaches a stable state. More specifically, the infrared irradiation temperature in Embodiment 1 and Comparative Example 1 refers to the temperature of the infrared absorbing and heating layer 10 on the substrate 40. Furthermore, the infrared irradiation temperature in Comparative Example 2 refers to the temperature of the substrate 40.

[0088] As shown in Table 2, in Comparative Example 1 and the embodiment, at a room temperature of 26°C, the infrared irradiation portion of the infrared absorbing heating layer 10 on the substrate 40 reaches a temperature of 50°C; at a room temperature of -5°C, the infrared irradiation portion of the infrared absorbing heating layer 10 on the substrate 40 reaches a temperature of 7°C. On the other hand, in Comparative Example 2, the temperature reached by the infrared irradiation portion of the substrate 40 was approximately the same as the room temperature at both a room temperature of 26°C and a room temperature of -5°C, and no temperature increase was observed in the substrate 40.

[0089] Here, the photothermal conversion members 1 of the embodiments, Comparative Example 1, and Comparative Example 2 are arranged between the light-emitting optical system 110 and the light-receiving optical system 120 as shown in FIG4A, and the characteristics of the infrared absorption heating layer 10 and its function as a transmissive photoelectric sensor 100A are evaluated. At room temperature of 26°C, there is no frost on the surface of the substrate 40 of each photothermal conversion member 1 in the infrared irradiation portion. On the other hand, as shown in Table 2, at room temperature of -5°C, the presence or absence of frost on the surface of the substrate 40 of each photothermal conversion member 1 in the infrared irradiation portion is none (0), none (0), and present (×) in Comparative Example 1, Embodiment, and Comparative Example 2, respectively. In Comparative Example 1, although there is no frost on the surface at room temperature of 26°C and room temperature of -5°C, since the entire surface of the substrate 40 is covered by the infrared absorption heating layer 10 with a transmittance of 0%, light cannot be detected in the transmissive photoelectric sensor 100A (×). In Comparative Example 2, the infrared transmittance of the substrate 40 was 90% at room temperature (26°C), and light reception could be detected in the transmissive photoelectric sensor 100A (〇). However, at room temperature (-5°C), since the temperature did not increase before and after infrared irradiation, frost formed on the surface of the substrate 40 over time, and therefore light reception could not be detected in the transmissive photoelectric sensor 100A (×). On the other hand, in the embodiment, the photoelectric sensor 100A could detect light reception. This is because the heat emitted by the patterned portion PT is also transferred to the substrate 40 exposed in the non-patterned portion NPT and raises its temperature, thereby preventing frost formation on the substrate 40 of the non-patterned portion NPT. As a result, the transmissive photoelectric sensor 100A could detect light reception (〇). Furthermore, in terms of the heat resistance and gas generation of the infrared absorbing heating layer 10, Comparative Example 1, the embodiment, and Comparative Example 2 were all good (〇).

[0090] Figure 8 is a diagram illustrating the characteristics of the photothermal conversion component. The horizontal axis of Figure 8 represents the pattern aperture ratio of the infrared absorption heating layer 10, the left vertical axis represents the arrival temperature of the infrared irradiation part (the arrival temperature when the infrared irradiation part reaches a stable state), and the right vertical axis represents the infrared transmittance, reflectance, and absorptivity of the photothermal conversion component.

[0091] In Figure 8, the aperture ratio of 0% on the horizontal axis corresponds to Comparative Example 1, 50% corresponds to the Example 2, and 100% corresponds to Comparative Example 2. In Figure 8, the dots marked with △ indicate the temperature reached by the infrared irradiated part of the photothermal conversion member 1 after infrared irradiation at room temperature of 26°C, and the dots marked with 〇 indicate the temperature reached by the infrared irradiated part of the photothermal conversion member 1 after infrared irradiation at room temperature of -5°C.

[0092] The infrared transmittance corresponding to the pattern aperture ratio of the infrared absorbing heating layer 10 is almost directly proportional to the infrared transmittance, and the infrared absorptivity is almost inversely proportional to the infrared transmittance. The infrared reflectance corresponding to the pattern aperture ratio of the infrared absorbing heating layer 10 is between 0.2% and 10%.

[0093] As shown in Comparative Example 1, the lower the pattern aperture ratio of the infrared absorbing and heating layer 10, the lower the reflectivity and transmittance of infrared rays, and the higher the absorption rate. On the other hand, as shown in Comparative Example 2, the higher the pattern aperture ratio of the infrared absorbing and heating layer 10, the higher the reflectivity and transmittance of infrared rays, and the lower the absorption rate. Therefore, in order to increase the heat generation of the infrared absorbing and heating layer 10 by absorbing infrared rays, although the pattern aperture ratio of the infrared absorbing and heating layer 10 can be reduced, the transmittance will decrease, causing the photoelectric sensor 100A to fail to function. On the other hand, if the pattern aperture ratio of the infrared absorbing and heating layer 10 is increased, although the transmittance will increase, which is beneficial to the detection of the photoelectric sensor 100A, the heat generation of the infrared absorbing and heating layer 10 will decrease.

[0094] In the infrared absorption and heating layer 10 of the photothermal conversion member 1 of the embodiment, while ensuring infrared transmittance, the same heating characteristics as those of Comparative Example 1 are obtained. Therefore, by using the infrared absorption and heating layer 10 related to the embodiment as the cover plate of the photoelectric sensor 100A, the frost on the cover plate can be suppressed while enabling the photoelectric sensor 100A to function.

[0095] As an example, when a photothermal conversion component 1 with an infrared absorption heating layer 10 having a reflectivity of less than 5% is formed on an infrared transmissive substrate 40 with a thermal conductivity of less than 0.4 W / mK, and infrared radiation with a wavelength of 850 nm to 1550 nm is irradiated onto the infrared absorption heating layer 10, heating above +20°C can be obtained at room temperature (normal temperature).

[0096] Furthermore, a photothermal conversion component 1 identical to that described above is prepared, and infrared rays with wavelengths of 850nm to 940nm are irradiated in a low-temperature environment (approximately -10°C). The surface temperature can be maintained above 5°C through heating. At this time, in a low-temperature environment, no frost is observed on either the unpatterned portion NPT (see Figure 2A) or the patterned portion PT (see Figure 2A) of the infrared absorbing heating layer 10. This is because the heat generated by the patterned portion PT is also conducted to the unpatterned portion NPT, causing its temperature to rise.

[0097] (Applicable Example) The photothermal conversion component 1 of this embodiment can be used in LED traffic lights. By mounting the photothermal conversion component 1 on the cover plate of the LED traffic light, the infrared radiation emitted by the LED traffic light is used to heat the infrared radiation absorption heating layer 10 without blocking the light emitted by the LED traffic light. In this way, snow or frost adhering to the cover plate of the LED traffic light can be melted with low power.

[0098] Furthermore, the photothermal conversion component 1 related to this embodiment can be used in LED headlights for vehicles such as automobiles or motorcycles. By mounting the photothermal conversion component 1 on the cover plate of the LED headlight, the infrared radiation emitted by the LED headlight is used to heat the infrared radiation absorption heating layer 10 without blocking the light emitted by the LED headlight. In this way, snow or frost adhering to the cover plate of the LED headlight can be melted with low power.

[0099] Furthermore, the photothermal conversion member 1 of this embodiment can be used in the window glass of a house or a car. By installing the photothermal conversion member 1 on the window glass, infrared rays emitted by sunlight or indoor lighting are used to heat the infrared absorption heating layer 10. In this way, snow or frost adhering to the window glass can be melted without the use of additional dedicated heating electricity.

[0100] However, although the present embodiments have been described above, the present invention is not limited to these examples. For example, when the industry appropriately adds, deletes, or designs changes to the constituent elements of the aforementioned embodiments, or appropriately combines the features of the constituent examples of the embodiments, as long as they possess the essence of the present invention, they are also included within the scope of the present invention. [Simplified Explanation of the Diagram]

[0015] [Fig. 1A] A schematic cross-sectional view illustrating the configuration of a photothermal conversion component related to this embodiment. [Fig. 1B] A schematic cross-sectional view illustrating the configuration of a photothermal conversion component related to this embodiment. [Fig. 2A] A schematic plan view showing an example of a pattern for an infrared absorbing and heating layer. [Fig. 2B] A schematic plan view showing an example of a pattern for an infrared absorbing and heating layer. [Fig. 3A] A schematic plan view showing an example of a pattern for an infrared absorbing and heating layer. [Fig. 3B] A schematic plan view showing an example of a pattern for an infrared absorbing and heating layer. [Fig. 4A] A schematic diagram showing an example of the configuration of a photoelectric sensor. [Fig. 4B] A schematic diagram showing an example of the configuration of a photoelectric sensor. [Fig. 5A] A schematic diagram showing an example of the configuration of a photoelectric sensor. [Fig. 5B] A schematic diagram showing an example of the configuration of a photoelectric sensor. [Fig. 5C] A schematic diagram showing an example of the configuration of a photoelectric sensor. [Fig. 6A] A schematic diagram showing an example of the configuration of a photoelectric sensor. [Fig. 6B] A schematic diagram showing an example of the configuration of a photoelectric sensor. [Fig. 7A] A schematic cross-sectional view illustrating the structure of an infrared absorbing heating layer. [Fig. 7B] A schematic cross-sectional view illustrating the structure of an infrared absorbing heating layer. [Fig. 7C] A secondary electron image (surface observation image 1) obtained by observing the second part of the main surface of the infrared absorbing heating layer of the photothermal conversion member related to Manufacturing Example 1 (Example of the present invention) from the normal direction of the main surface using a scanning electron microscope. [Fig. 7D] A secondary electron image obtained by observing the second part of the main surface of the infrared absorbing heating layer of the photothermal conversion member related to Manufacturing Example 1 (Example of the present invention) from the oblique direction of the normal direction of the main surface using a scanning electron microscope. [Fig. 7E] A cross-section of the photothermal conversion member related to Manufacturing Example 1 (Example of the present invention) obtained by observing the secondary electron image using a scanning electron microscope. [Fig. 7F] A symbol diagram showing shape features is added to Fig. 7E. [Fig. 8] A characteristic diagram illustrating the infrared absorbing heating layer.

Claims

1. A photothermal conversion component, characterized by an infrared-transmitting substrate; and an infrared-absorbing and heating layer supported by the substrate, wherein, viewed from the normal direction of the substrate, the infrared-absorbing and heating layer has a patterned portion, the infrared-absorbing and heating layer has a first portion comprising nickel and phosphorus, and a second portion comprising a plurality of protrusions protruding from the direction of the substrate, and an oxide comprising nickel and phosphorus.

2. The photothermal conversion component as described in claim 1, wherein, Viewed from the normal direction of the aforementioned substrate, the aforementioned substrate is exposed in the non-patterned portion of the area where the patterned infrared absorbing and heating layer is not disposed.

3. The photothermal conversion component as described in claim 1, wherein, The aforementioned first part is located closer to the aforementioned substrate side than the aforementioned second part, and the aforementioned second part side surface of the aforementioned first part has an uneven structure.

4. The photothermal conversion component as described in claim 3, wherein, The aforementioned second part is configured to protrude further from the portion of the aforementioned first part that protrudes from the side opposite to the aforementioned substrate side to the side opposite to the aforementioned substrate side.

5. The photothermal conversion component as described in claim 1, wherein, The aforementioned second part is a modified product of the aforementioned first part, and the aforementioned second part is continuous with the aforementioned first part.

6. The photothermal conversion component as described in claim 1, wherein, The aforementioned substrate is a cover plate disposed between the aforementioned light-receiving optical system or the aforementioned light-projecting optical system, which receives infrared light projected from the light-receiving optical system.

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