Methods and apparatus for processing a substrate

Abstract

This document provides methods and apparatus for processing a substrate. For example, the method for processing a substrate includes: supplying vaporized silicon-containing precursor from a gas supplier to a processing space of a processing chamber; supplying a first processing gas from the gas supplier to the processing space; powering the first processing gas with radio frequency source power during a first operating cycle to cause the first processing gas to react with the vaporized silicon-containing precursor; and simultaneously supplying a processing gas mixture from the gas supplier with radio frequency bias power during a second operating cycle to a substrate support disposed in the processing space, thereby depositing a SiHx film on a substrate supported on the substrate support, wherein the second operating cycle is different from the first operating cycle.

Description

[Technical Field]

[0001] The embodiments described herein generally relate to methods and apparatus for processing substrates. More specifically, the embodiments described herein relate to methods and apparatus configured to form gap-filling amorphous silicon films using in-situ plasma processing. [Previous Technology]

[0002] Conventional methods and apparatus for interstitial filling of amorphous silicon films involve using low-pressure chemical vapor deposition (LPCVD), atomic layer deposition (ALD), and DED furnaces to grow stable amorphous silicon films to meet platform requirements. However, due to the inherent conformal nature of such films, such methods can present structural problems (e.g., line bending) and provide poor interstitial filling (e.g., porosity (seam / void)). Furthermore, such methods can be very complex and expensive, have low yields, and often exceed thermal budgets. [Summary of the Invention]

[0003] This document provides a method and apparatus for processing a substrate. In some embodiments, the method for processing a substrate includes: supplying vaporized silicon-containing precursor from a gas supplier to a processing space of a processing chamber; supplying a first processing gas from the gas supplier to the processing space; energizing the first processing gas using radio frequency source power during a first duty cycle to cause the first processing gas to react with the vaporized silicon-containing precursor; and simultaneously supplying a processing gas mixture from the gas supplier while providing radio frequency bias power during a second duty cycle to a substrate support disposed in the processing space, thereby depositing a SiHx film on a substrate supported on the substrate support, wherein the second duty cycle is different from the first duty cycle.

[0004] According to at least some embodiments, a non-transitory computer-readable storage medium has a plurality of instructions stored thereon that, when executed by a processor, perform a method for processing a substrate. The method includes: supplying vaporized silicon-containing precursor from a gas supply to a processing space within a processing chamber; supplying a first processing gas from the gas supply to the processing space; energizing the first processing gas with radio frequency source power during a first duty cycle to cause the first processing gas to react with the vaporized silicon-containing precursor; and simultaneously supplying a mixture of processing gases from the gas supply to a substrate support disposed in the processing space during a second duty cycle, thereby depositing a SiHx film on a substrate supported on the substrate support, the second duty cycle being different from the first duty cycle.

[0005] According to at least some embodiments, a chemical vapor deposition chamber for processing a substrate includes: a substrate support disposed in a processing space of the chemical vapor deposition chamber; an RF source power coupled to a nozzle and configured to provide RF source power during a first duty cycle; an RF bias power supply coupled to the substrate support and configured to provide RF bias power to the substrate support during a second duty cycle, the second duty cycle being different from the first duty cycle; and a gas supply coupled to the chemical vapor deposition chamber and configured to supply processing gas to a nozzle disposed in the processing space. The head; and the controller, configured to: supply vaporized silicon-containing precursor from a gas supplier to a processing space in a processing chamber; supply a first processing gas from a gas supplier to the processing space; power the first processing gas with RF source power during a first duty cycle to cause the first processing gas to react with the vaporized silicon-containing precursor; and supply a processing gas mixture from a gas supplier while providing RF bias power to a substrate support during a second duty cycle, thereby depositing a SiHx film on a substrate supported on the substrate support disposed in the processing space.

[0006] Other and further embodiments described below.

Implementation Method

[0012] This document provides embodiments of methods and apparatus for processing substrates. For example, the methods and apparatus described herein utilize in-situ processing to convert SiHx into amorphous silicon bonds, thereby forming an amorphous silicon network and densifying the amorphous silicon film in a deposition chamber such as a chemical vapor deposition chamber. Compared to conventional methods and apparatus, the methods and apparatus described herein offer low cost and high throughput (due to, for example, fewer chambers required for converting and stabilizing the amorphous silicon film), use of low-temperature amorphous silicon conversion to improve flowability and avoid porosity / conformity problems, and provide tunability of film composition by changing processing conditions.

[0013] FIG1 is a flowchart of a method 100 for processing a substrate according to at least some embodiments of the present invention, and FIG2 is a tool (or apparatus) 200 that can be used to perform method 100 according to at least some embodiments of the present invention.

[0014] Method 100 can be performed by tool 200, which includes any suitable processing chamber, annealing chamber, pre-cleaning chamber, wet etching or dry etching chamber, or chemical mechanical polishing (CMP) chamber, wherein the suitable processing chamber is configured for one or more of the following: physical vapor deposition (PVD), such as plasma-enhanced chemical vapor deposition (PECVD), flowable chemical vapor deposition (FCVD), low-pressure chemical vapor deposition (LPCVD), and / or atomic layer deposition (ALD) such as plasma-enhanced atomic layer deposition (PEALD) or thermal atomic layer deposition (e.g., without plasma formation). Exemplary processing systems that can be used to implement the inventive methods disclosed herein are available from Applied Materials, Inc., Santa Clara, California. Other processing chambers (including processing chambers supplied by other manufacturers) may also be used in conjunction with the teachings provided herein.

[0015] Tool 200 can be implemented in individual processing chambers, which can be provided as a standalone configuration or as part of a cluster tool, for example, which can be an integrated tool as described below with reference to FIG2. Examples of integrated tools are available from Applied Materials, Inc., Santa Clara, California. The methods described herein can be implemented by other integrated tools with suitable processing chamber couplings, or in other suitable processing chambers. For example, in some embodiments, the inventive methods can be implemented by an integrated tool with limited or no vacuum disruption between processing steps. For example, reduction in vacuum disruption can limit or prevent contamination (e.g., oxidation) of multiple portions of the substrate.

[0016] The integrated tool includes a processing platform (vacuum sealing processing platform) 201, a factory interface 204, and a controller 202. The processing platform 201 includes multiple processing chambers, such as processing chambers 214A, 214B, 214C, and 214D operatively coupled to a transfer chamber (vacuum substrate transfer chamber) 203. The factory interface 204 is operatively coupled to the transfer chamber 203 by one or more loading gate chambers (two loading gate chambers 206A and 206B as shown in FIG. 2).

[0017] In some embodiments, the factory interface 204 includes a docking station 207 and a factory interface robot 238 for facilitating the transfer of one or more semiconductor substrates (wafers). The docking station 207 is configured to receive one or more front-opening wafer transfer cassettes (FOUPs). The embodiment of FIG2 shows four front-opening wafer transfer cassettes, such as 205A, 205B, 205C, and 205D. The factory interface robot 238 is configured to transfer substrates from the factory interface 204 to the processing platform 201 through loading gate chambers (such as 206A and 206B). The loading gate chambers 206A and 206B each have a first port coupled to the factory interface and a second port coupled to the transfer chamber 203. Loading gate chambers 206A and 206B are coupled to a pressure control system (not shown) that pumps down and vents air from loading gate chambers 206A and 206B to move the substrate between the vacuum environment of transfer chamber 206 and the substantially surrounding (e.g., atmospheric) environment of the factory interface 204. Transfer chamber 203 has a vacuum robot 242 disposed therein. Vacuum robot 242 is capable of transferring substrate 221 between loading gate chambers 206A and 206B and processing chambers 214A, 214B, 214C, and 214D.

[0018] In some embodiments, processing chambers 214A, 214B, 214C, and 214D are coupled to transfer chamber 203. Processing chambers 214A, 214B, 214C, and 214D include at least an ALD chamber, a CVD chamber, a PVD chamber, an electron beam deposition chamber, an electroplating chamber, an electroless electroplating (EEP) deposition chamber, a pre-cleaning chamber, a wet etching chamber, a dry etching chamber, an annealing chamber, and / or other chambers suitable for carrying out the methods described herein.

[0019] In some embodiments, one or more optional service chambers (shown as 216A and 216B in the figures) may be coupled to transfer chamber 203. Service chambers 216A and 216B may be configured to perform other substrate processing, such as degassing, bonding, CMP, wafer cleaving, etching, plasma dicing, orientation, substrate measurement, cooling, and other similar processes.

[0020] The controller 202 controls the operation of the tool 200 by directly controlling the processing chambers 214A, 214B, 214C, and 214D, or by controlling the operation of the tool 200 through a computer (or controller) associated with the processing chambers 214A, 214B, 214C, 214D and the tool 200. During operation, the controller 202 enables data collection and feedback from each chamber and system to optimize the performance of the tool 200. The controller 202 generally includes a central processing unit 230, memory 234, and support circuitry 232. The central processing unit 230 can be any type of general-purpose computer processor used in industrial settings. The support circuitry 232 is conventionally coupled to the central processing unit 230 and may include cache memory, clock circuitry, input / output subsystems, power supplies, and other similar components. The software formulas of the processing method described above can be stored in memory 234 (e.g., a non-transitory computer-readable storage medium containing instructions), and when executed by central processing unit 230, central processing unit 230 is converted into a controller (dedicated computer). The software formulas can also be stored and / or executed by a second controller (not shown) located at the remote end of tool 200.

[0021] Figure 3 is a cross-sectional view of a processing chamber 300 according to at least some embodiments herein. The processing chamber 300 may be one of the individual processing chambers of the tool 200. For example, the processing chamber 300 may be configured to perform one or more plasma deposition processes. In at least some embodiments, the processing chamber 300 may be configured to perform PECVD and / or ALD. As an example, suitable processing chambers suitable for use with the teachings disclosed herein include processing chambers available from Applied Materials, Inc., Santa Clara, California.

[0022] The processing chamber 300 includes a chamber body 302 and a cover 304, which enclose a processing space 306. The chamber body 302 is generally made of aluminum, stainless steel, or other suitable materials. The chamber body 302 generally includes side walls 308 and a bottom 310. A substrate support access port (not shown) is generally defined in the side wall 308 and selectively sealed by a slit valve to allow the substrate 303 to enter and exit the processing chamber 300. An exhaust port 326 is defined in the chamber body 302 and couples the processing space 306 to a pump system 328, which may function as a purification station. The pump system 328 generally includes one or more pumps and a throttle valve for discharging and regulating the pressure of the processing space 306 in the processing chamber 300. In an embodiment, the pump system 328 is configured to maintain the pressure in the processing space 306 at an operating pressure as required by the processing, which is typically between about 1 mTorr and about 500 mTorr, between about 5 mTorr and about 100 mTorr, between about 5 mTorr and about 50 mTorr, or between 10 mTorr and about 5 Torr.

[0023] In some embodiments, the processing chamber 300 may utilize capacitively coupled radio frequency energy for plasma processing, or in some embodiments, the processing chamber 300 may utilize inductively coupled radio frequency energy for plasma processing. In some embodiments, a remote plasma source 377 (e.g., microwave) may optionally be coupled to a gas control board to clean the processing chamber 300 between processes.

[0024] The radio frequency source power 343 is coupled to the nozzle assembly 330 via a matching network 341. The radio frequency source power 343 can generally generate power up to 5000 W, for example, between about 100 W and about 5000 W, or between about 1000 W and about 3000 W, or about 1500 W, and is optionally located at an adjustable frequency in the range of about 50 kHz to about 200 MHz, for example, 13.56 MHz. The radio frequency source power 343 can operate in a duty cycle (e.g., a first duty cycle) during processing. The duty cycle can be from about 10% to about 100%, where 10% is pulsed and 100% is continuous.

[0025] A gas control panel 358 is coupled to the processing chamber 300 and includes one or more mass flow controllers 357 for supplying one or more processing gases and / or cleaning gases to the processing space 306. Inlet ports 332', 332", and 332'" are provided in a cover 304 to allow gas to be transferred from the gas control panel 358 to the processing space 306 of the processing chamber 300. In embodiments, the gas control panel 358 is adapted to supply the following gases through inlet ports 332', 332", 332'" to the internal space 306 of the processing chamber 300: oxygen (O2), inert gases such as argon and helium (or other noble gases), nitrogen (N2), hydrogen (H2), or gas mixtures such as carbon tetrafluoride (CF4), octafluorocyclobutane or perfluorocyclobutane (C4F8), trifluoromethane (CHF3), sulfur hexafluoride (SF6), silicon tetrafluoride or tetrafluorosilane (SiF4), or precursors such as tetrasilane, trisilane or disilane, etc. In some embodiments, the processing gas including the oxidant may further include an inert gas such as argon or helium. In some embodiments, the processing gas includes a reducing agent such as hydrogen and may be mixed with an inert gas such as argon or with other gases such as nitrogen or helium. In some embodiments, chlorine may be provided alone or in combination with at least one of nitrogen, helium, or an inert gas such as argon. Non-limiting examples of oxygen-containing gases include one or more of the following: oxygen (O2), carbon dioxide (CO2), H2O, nitrous oxide (N2O), nitrogen dioxide (NO2), ozone (O3), and other similar gases. Non-limiting examples of nitrogen-containing gases include N2, ammonia (NH3), and other similar gases. Non-limiting examples of chlorine-containing gases include hydrogen chloride (HCl), chlorine (Cl2), carbon tetrachloride (CCl4), and other similar gases. In an embodiment, the nozzle assembly 330 is coupled to the inner surface 314 of the cover 304. The nozzle assembly 330 includes a plurality of apertures that allow gas to flow from the inlet ports 332', 332”, 332'” through the nozzle assembly 330 into the processing space 106 of the processing chamber 100 and to distribute in a predetermined manner across the surface of the substrate 303 being processed in the processing chamber 300 (e.g., center, middle, side).

[0026] In one embodiment, the nozzle assembly 330 is configured with a plurality of regions that allow individual control of gas flow into the processing space 306 of the processing chamber 300. The nozzle assembly 330 includes a top delivery gas nozzle 335 configured to direct processing gas to the substrate support surface of the substrate support 348. Therefore, the top delivery gas nozzle 335 includes a central flow channel outlet 334 configured to control the central flow rate and an intermediate flow channel outlet 336 configured to control the intermediate flow rate. The central flow channel outlet 334 and the intermediate flow channel outlet 336 are separately coupled to the gas control plate 358 through inlet ports 332', 332"'. Furthermore, one or more side delivery gas nozzles may extend through the chamber body 302 and may be configured to direct the process gas to the side surface of the substrate support 348. For example, in at least some embodiments, the side delivery gas nozzle 333 may include a plurality of side flow channel outlets 337 configured to control the side flow rate and separately coupled to the gas control plate 358 through inlet ports 332"'. Unlike the central flow channel outlet 334 and the intermediate flow channel outlet 336 disposed on the cover 304, the side flow channel outlets 337 are disposed in a generally circular manner along the inner wall of the side wall 308 of the processing chamber. The central flow channel outlet 334 and the intermediate flow channel outlet 336 are configured to provide processing gas to substantially etch the central and intermediate regions of the substrate (e.g., between the center and the edge), while the side flow channel outlet 337, disposed along the sidewall, is configured to provide processing gas to substantially etch the edge region (or periphery) of the substrate.

[0027] A substrate support 348 is disposed in the processing space 306 of the processing chamber 300 and is located below a gas distribution assembly such as the nozzle assembly 330. For example, the substrate support 348 may be disposed below the nozzle assembly 330 such that the substrate is approximately 1 / 2 inch lower than the nozzle assembly 330. The substrate 303 is secured by the substrate support 348 during processing. The substrate support 348 generally includes a plurality of lifting pins (not shown) disposed through the substrate support 348, which are configured to lift the substrate 303 from the substrate support 348 to facilitate replacement of the substrate 303 by a robot (not shown) in a conventional manner. An inner liner 318 tightly surrounds the periphery of the substrate support 348.

[0028] The substrate support 348 includes a mounting plate 362, a base plate 364, and an electrostatic chuck 366. The mounting plate 362 is coupled to the bottom 310 of the chamber body 302 and includes multiple channels to route utilities such as fluid, power lines, and sensor leads to the base plate 364 and the electrostatic chuck 366. The electrostatic chuck 366 includes clamping electrodes 380 for holding the substrate 33 below the nozzle assembly 330. It is well known that the electrostatic chuck 366 is driven by an adsorption power source 382 to generate an electrostatic force that holds the substrate 303 to the adsorption surface. Alternatively, the substrate 303 can be held in the substrate support 348 by clamping, vacuum, or gravity. In at least some embodiments, the substrate support 348 is rotatable.

[0029] The base plate 364 or the electrostatic chuck 366 may include a heater 376 (e.g., at least one optional embedded heater), at least one optional embedded isolator 374, and a plurality of conduits 368, 370 for controlling the lateral temperature profile of the substrate support 348. The plurality of conduits 368, 370 are fluidly coupled to a fluid source 372, which circulates a temperature-regulating fluid within the conduits 368, 370. The heater 376 is regulated by a power supply 378. The plurality of conduits 368, 370 and the heater 376 are used to control the temperature of the base plate 364, heat and / or cool the electrostatic chuck 366, and ultimately control the temperature profile of the substrate 303 disposed on the electrostatic chuck 366. The temperatures of the electrostatic chuck 366 and the base plate 364 can be monitored using a plurality of temperature sensors 390, 392. The electrostatic chuck 366 may further include a plurality of gas channels (not shown), such as grooves, formed in the support surface of the substrate support plate of the electrostatic chuck 366 and fluidly coupled to a heat transfer gas (backside gas) source, such as helium. In operation, the backside gas is supplied to the gas channels under controlled pressure, thereby enhancing heat transfer between the electrostatic chuck 366 and the substrate 303. In embodiments, the temperature of the substrate can be maintained from about -20º C to about 450º C. For example, in at least some embodiments, the temperature of the substrate can be maintained from about -20º C to about 90º C.

[0030] The substrate support 348 is configured as a cathode and includes a clamping electrode 380 coupled to an RF bias power supply 384 and an RF bias power supply 386. The RF bias power supply 384 and the RF bias power supply 386 are coupled between the clamping electrode 380 and another electrode disposed in the substrate support 348, the other electrode being a nozzle assembly 330 (or cover 304) such as the chamber body 302. The RF bias power excites and sustains a plasma discharge formed by gas disposed in the processing area of ​​the chamber body 302.

[0031] Radio frequency bias power supplies 384 and 386 are coupled to clamping electrodes 380 disposed in substrate support 348 via matching circuit 388. The signals generated by radio frequency bias power supplies 384 and 386 are transmitted to substrate support 348 via matching circuit 388 in a single-feed manner to ionize the gas mixture provided in a plasma processing chamber such as processing chamber 300, thereby providing the ion energy required to perform etching, deposition, or other plasma enhancement processes. Radio frequency bias power supplies 384 and 386 are generally capable of generating radio frequency signals with frequencies from about 50 kHz to about 200 MHz (e.g., 2 MHz) and power between about 0 Watts and about 2500 Watts. Additional bias power 389 can be coupled to clamping electrodes 380 to control plasma characteristics. Furthermore, the RF bias power supplies 384 and 386 can operate for one duty cycle (e.g., a second duty cycle), which is much shorter than the duty cycle of the RF source power 343. For example, the RF bias power supplies 384 and 386 can operate for about 0.1% to about 20% of the duty cycle, for example, about 0.15% to about 5%. In at least some embodiments, the on-time of the duty cycle of the RF bias power supplies 384 and 386 has a pulse frequency of about 1 Hz to about 20 Hz, for example, about 2 Hz to about 20 Hz.

[0032] Controller 350 (e.g., similar to controller 202) is coupled to processing chamber 300 for controlling the operation of processing chamber 300. Controller 350 includes a central processing unit 352, memory 354 (e.g., a non-transitory computer-readable storage medium), and support circuitry 356 for controlling the processing order and regulating gas flow from gas control panel 358. Central processing unit 352 can be any form of general-purpose computer processor suitable for industrial settings. Software routines (e.g., stored executable instructions) can be stored in memory 354, such as random access memory, read-only memory, floppy disk, hard disk, or any other form of digital storage. Support circuitry 356 is conventionally coupled to central processing unit 352 and may include cache memory, clock circuitry, input / output systems, power supply, and other similar components. Bidirectional communication between controller 350 and various components of processing chamber 300 is handled through a large number of signal cables.

[0033] Referring to FIG1, in 102, method 100 includes supplying vaporized precursors from a gas supplier to a processing space of a processing chamber (e.g., a plasma-enhanced chemical vapor deposition chamber). For example, a gas control plate 358 may supply processing gases (such as one or more vaporized precursors) to a processing space 306 of a processing chamber 300 (e.g., one of processing chambers 214A-214D) to deposit (grow) an interstitial filling film (e.g., a flowable silicon film such as flowable amorphous silicon) on a substrate (e.g., substrate 303). In at least some embodiments, the gas control plate 358 may supply vaporized silicon-containing precursors to form a SiHx film, said precursors including one of tetrasilane, trisilane, or disilane. For example, in at least some embodiments, the supplied vaporized precursor may be tetrasilane.

[0034] Next, in 104, method 100 includes supplying a first processing gas from a gas supplier to the processing space. For example, a gas control panel 358 may supply the first processing gas, comprising hydrogen (H2), to the processing space. In at least some embodiments, in 104, the temperature of the substrate may be maintained at about -20º C to about 90º C while the first processing gas is supplied. Furthermore, in 104, the pressure of the processing space may be maintained at 10 mTorr to 5 Torr while the first processing gas is supplied.

[0035] Next, in step 106, method 100 includes powering a first process gas with radio frequency source power in a first duty cycle to react the first process gas with a vaporized silicon-containing precursor. For example, the radio frequency source power 343 can generate power from about 100 W to about 5000 W and is optionally located at an adjustable frequency in the range of about 50 kHz to about 200 MHz, for example, 13.56 MHz. The radio frequency source power 343 can operate in a duty cycle (e.g., a first duty cycle) during processing. The duty cycle can be from about 10% to about 100%, where 10% is pulsed and 100% is continuous.

[0036] Next, in 108, method 100 includes supplying a process gas mixture from a gas supplier while providing radio frequency bias power to the substrate support during a second duty cycle, thereby depositing a SiHx (e.g., amorphous silicon) film on a substrate supported on the substrate support disposed in the processing space. For example, the gas control board 358 may supply a gas mixture containing an inert gas, such as argon, helium, and / or other rare gases. For example, in at least some embodiments, the gas mixture may include argon and helium. Furthermore, in at least some embodiments, the radio frequency bias power may be from about 200 W to about 1600 W, the second duty cycle may be from about 0.15% to about 20%, and the power supply time of the second duty cycle has a pulse frequency of from about 2 Hz to about 20 Hz. In 108, the radio frequency source power and the radio frequency bias power are simultaneously provided to the nozzle and the substrate support, respectively.

[0037] In at least some embodiments, the RF source power and RF bias power can be provided sequentially in the form of a closed-loop gas processing scheme. For example, in at least some embodiments, after step 108, steps 102 to 108 can be repeated as needed (e.g., in a cyclic mode) until the amorphous silicon film reaches the desired thickness. For this purpose, processing parameters such as the thickness of each cycle and processing conditions (e.g., source / bias power, pulse frequency, duty cycle, processing gas, temperature, pressure, power supply time, etc.) can be varied to adjust the composition of the amorphous silicon film. Furthermore, to help obtain a uniform amorphous silicon film, the substrate support 348 can be rotated during any of steps 102 to 108. For example, the substrate support 348 can be rotated during steps 106 and 108.

[0038] The refractive index can be increased and the hydrogen content reduced throughout the full thickness of the amorphous silicon film through high-temperature / high-pressure annealing, thereby further improving the quality of the amorphous silicon film. Accordingly, in at least some embodiments, as an option, method 100 includes annealing the substrate. For example, after 108, a vacuum robot 242 disposed in the transfer chamber 203 of tool 200 can transfer the substrate 303 from processing chamber 300 (e.g., processing chamber 214A) to one or more other processing chambers (e.g., processing chamber 214B) to anneal the substrate. In at least some embodiments, the step of annealing the substrate includes maintaining the substrate at a temperature of about 500°C, maintaining the pressure of the processing space of the processing chamber 214B at about 10 mTorr to about 37,500 Torr (70 Bar), and supplying one or more processing gases, such as Ar, CO2, D2, H2, N2, and O2, to the processing space during annealing.

[0039] Although the foregoing description is directed to embodiments herein, other and further embodiments may be designed without departing from the basic scope of this document. [Simplified Explanation of the Diagram]

[0007] The embodiments briefly summarized above and discussed in more detail below can be understood by referring to the illustrative embodiments illustrated in the accompanying drawings. However, the accompanying drawings illustrate only typical embodiments and are therefore not to be construed as limiting the scope of the document; other equivalent embodiments are permissible.

[0008] Figure 1 is a flowchart of a method for processing a substrate according to at least some embodiments of this document;

[0009] Figure 2 is a schematic diagram of an apparatus according to at least some embodiments of the present invention; and

[0010] Figure 3 is a cross-sectional view of a processing chamber according to at least some embodiments of the present invention.

[0011] For ease of understanding, the same component symbols are used as much as possible to identify common components in the figures. The figures are not drawn to scale and have been simplified for clarity. Components and features in one embodiment may be advantageously incorporated into other embodiments without further description. [Biomaterial Storage]

[0041] Domestic storage information (please note in order of storage institution, date, and number): None. International storage information (please note in order of storage country, institution, date, and number): None.

Claims

1. A method for processing a substrate, comprising: A vaporized silicon-containing precursor is supplied from a gas supplier to a processing space within a processing chamber; A first processing gas is supplied from the gas supplier to the processing space; the first processing gas is energized using radio frequency source power during a first duty cycle to react with the vaporized silicon-containing precursor; and while providing radio frequency bias power during a second duty cycle to a substrate support disposed in the processing space, a processing gas mixture is supplied from the gas supplier to deposit a SiHx film on a substrate supported on the substrate support. The second duty cycle is different from the first duty cycle, wherein the first duty cycle is from about 10% to about 100%, 10% is pulsed, and 100% is continuous, wherein the second duty cycle is from about 0.15% to about 20%, and wherein the pulse frequency of an on-time period of the second duty cycle is from about 2 Hz to about 20 Hz.

2. The method as described in claim 1 further includes simultaneously providing the RF source power and the RF bias power to a nozzle and the substrate support, respectively.

3. The method as described in claim 1, further comprising rotating the substrate support.

4. The method as described in claim 1 further includes maintaining a temperature of the substrate at about -20ºC to about 90ºC while supplying the first processing gas.

5. The method as described in claim 1, further comprising maintaining a pressure of about 10 mTorr to 5 Torr while supplying the first processing gas.

6. The method as described in claim 1, wherein the processing chamber is a plasma-enhanced chemical vapor deposition chamber.

7. The method as described in claim 1, wherein the power of the radio frequency source is about 100 W, and wherein the power of the radio frequency bias is about 200 W to about 1600 W.

8. The method as described in claim 1, further comprising annealing the substrate to form a flowable amorphous silicon film.

9. The method as described in claim 1, wherein supplying the first processing gas includes supplying hydrogen (H2).

10. The method as described in claim 1, wherein supplying the processing gas mixture comprises supplying argon and helium.

11. The method as described in any one of claims 1 to 10, wherein the silicon-containing precursor supplied for vaporization includes one of tetrasilane, trisilane, or disilane.

12. A non-transitory computer-readable storage medium having a plurality of instructions stored thereon, which, when executed by a processor, perform a method for processing a substrate, the method comprising: A vaporized silicon-containing precursor is supplied from a gas supplier to a processing space within a processing chamber; A first processing gas is supplied from the gas supplier to the processing space; the first processing gas is powered by radio frequency source power during a first duty cycle to react the first processing gas with the vaporized silicon-containing precursor; and while providing radio frequency bias power during a second duty cycle to a substrate support disposed in the processing space, a processing gas mixture is supplied from the gas supplier to deposit a SiHx film on a substrate supported on the substrate support. The second duty cycle is different from the first duty cycle, wherein the first duty cycle is from about 10% to about 100%, 10% is pulsed and 100% is continuous, the second duty cycle is from about 0.15% to about 20%, and the pulse frequency of an on-time of the second duty cycle is from about 2 Hz to about 20 Hz.

13. The non-transitory computer-readable storage medium as described in claim 12, the method further comprising simultaneously supplying the radio frequency source power and the radio frequency bias power to a nozzle and the substrate support, respectively.

14. The non-transitory computer-readable storage medium as described in claim 12, the method further comprising rotating the substrate support.

15. The non-transitory computer-readable storage medium as described in any one of claims 12 to 14, the method further comprising maintaining a temperature of the substrate at about -20ºC to about 90ºC while supplying the first processing gas.

16. A chemical vapor deposition chamber for processing a substrate, comprising: A substrate support is disposed in a processing space of the chemical vapor deposition chamber; A radio frequency (RF) power source, coupled to a nozzle and configured to provide RF power during a first duty cycle; an RF bias power source, coupled to the substrate support and configured to provide RF bias power to the substrate support during a second duty cycle, the second duty cycle being different from the first duty cycle; a gas supply, coupled to the chemical vapor deposition chamber and configured to supply process gas to the nozzle disposed in the process space; and a controller configured to: supply a vaporized silicon-containing precursor from the gas supply to the process space of the chemical vapor deposition process chamber; and supply a first process gas from the gas supply to the process space. The first processing gas is powered by the radio frequency source power during the first operating cycle to react with the vaporized silicon-containing precursor; and while providing radio frequency bias power to the substrate support during the second operating cycle, a processing gas mixture is supplied from the gas supplier to deposit a SiHx film on a substrate supported on the substrate support, the substrate support being disposed in the processing space, wherein the first operating cycle is from about 10% to about 100%, 10% is pulsed and 100% is continuous, wherein the second operating cycle is from about 0.15% to about 20%, and wherein the pulse frequency of a power supply time (on time) of the second operating cycle is from about 2 Hz to about 20 Hz.

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