Detection devices and electronic machinery

Abstract

The objective of this invention is to further improve sensitivity by suppressing crosstalk between pixels without reducing light-gathering characteristics. The camera device of the present invention comprises: a plurality of pixels, each of which includes a photoelectric conversion unit and is arranged in a matrix-like planar configuration; a color filter disposed on the photoelectric conversion unit for each of the aforementioned pixels; and a wall-like structure portion disposed between adjacent aforementioned color filters by defining their shapes with a first wall portion, thereby separating the aforementioned color filters from each other.

Description

Technical Field

[0001] This disclosure relates to a camera device and an electronic machine. Prior Technology

[0002] As imaging devices used in digital cameras or video cameras, CCD (Charge Coupled Device) image sensors or CMOS (Complementary Metal Oxide Semiconductor) image sensors are already known.

[0003] In these image sensors, in order to suppress crosstalk between pixels, it is explored to form gaps between the color filters provided for each pixel. For example, Patent Document 1 below discloses an image sensor that forms gaps by sealing the openings above the channels formed between the color filters with a low-coating film. [Previous Technical Documents] [Patent Literature]

[0004] Patent Document 1: U.S. Patent Application Publication No. 2019 / 0157329 Summary of the Invention

[0005] [The problem the invention aims to solve]

[0006] However, in the image sensor disclosed in the aforementioned Patent Document 1, in order to further suppress crosstalk between pixels and increase the width of the gap, a thicker film is used to block the wider trench. In this case, the light-gathering characteristics of the image sensor are reduced because the distance between the crystal lens and the photoelectric conversion element becomes longer.

[0007] Therefore, this disclosure provides a novel and improved camera device and electronic device that can further improve sensitivity by suppressing crosstalk between pixels without reducing light-gathering characteristics. [Technical means to solve the problem]

[0008] According to this disclosure, a camera device is provided, comprising: a plurality of pixels, each of which includes a photoelectric conversion unit and is arranged in a matrix-like planar configuration; a color filter disposed on the photoelectric conversion unit for each of the aforementioned pixels; and a wall-like structure portion disposed between adjacent aforementioned color filters by defining their shapes with a first wall portion, thereby separating the aforementioned color filters from each other.

[0009] Furthermore, according to this disclosure, an electronic device is provided, the electronic device including a camera device, the camera device comprising: a plurality of pixels, each of which includes a photoelectric conversion unit and is arranged in a matrix-like planar configuration; a color filter disposed on the photoelectric conversion unit for each of the aforementioned pixels; and a wall-like structure portion disposed between adjacent aforementioned color filters by defining the shape with a first wall portion, thereby separating the aforementioned color filters from each other. Simple Explanation of the Diagram

[0010] Figure 1 is a schematic diagram showing the overall structure of the camera device according to the first embodiment of this disclosure. Figure 2 is a longitudinal sectional view showing an example of the cross-sectional structure of a pixel section. Figure 3 is a longitudinal sectional view showing an example of the cross-sectional structure of a pixel section. Figure 4 is a top view showing the planar composition of the pixel section. Figure 5 is a longitudinal sectional view showing the first variation of the wall-like structure. Figure 6A is a longitudinal sectional view showing a second variation of the wall-like structure. Figure 6B is a longitudinal sectional view showing a second variation of the wall-like structure. Figure 7 is a longitudinal sectional view showing the third variation of the wall-like structure. Figure 8 is a longitudinal sectional view showing the fourth variation of the wall-like structure. Figure 9 is a longitudinal sectional view showing the fourth variation of the wall-like structure. Figure 10 is a longitudinal sectional view showing the fifth variation of the wall-like structure. Figure 11 is a longitudinal sectional view showing the fifth variation of the wall-like structure. Figure 12 is a top view showing the first variation of the opening configuration. Figure 13 is a top view showing a second variation of the opening configuration. Figure 14 is a top view showing the third variation of the opening configuration. Figure 15 is a top view showing the fourth variation of the opening configuration. Figure 16A is a top view showing the first variation example of the pixel section. Figure 16B is a top view showing the second variation of the pixel section. Figure 17 is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part. Figure 18 is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part. Figure 19 is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part. Figure 20 is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part. Figure 21 is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part. Figure 22 is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part. Figure 23 is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part. Figure 24 is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part. Figure 25 is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part. Figure 26 is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part. Figure 27 is a longitudinal sectional view showing an example of the cross-sectional configuration of the pixel portion in the second embodiment. Figure 28A is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the second embodiment. Figure 28B is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the second embodiment. Figure 28C is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the second embodiment of this disclosure. Figure 28D is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the second embodiment. Figure 29A is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the first variation of the second embodiment. Figure 29B is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the first variation of the second embodiment. Figure 29C is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the first variation of the second embodiment. Figure 30A is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the second variation of the second embodiment. Figure 30B is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the second variation of the second embodiment. Figure 31 is a longitudinal sectional view showing an example of the cross-sectional configuration of the pixel portion in the third embodiment. Figure 32 is a longitudinal sectional view illustrating an example of a variation in the pixel portion of the third embodiment. Figure 33 is a longitudinal sectional view illustrating an example of a variation in the pixel portion of the third embodiment. Figure 34 is a longitudinal sectional view illustrating an example of a variation of the pixel portion in the third embodiment. Figure 35 is a longitudinal sectional view illustrating an example of a variation of the pixel portion in the third embodiment. Figure 36A is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the third embodiment. Figure 36B is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the third embodiment. Figure 36C is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the third embodiment. Figure 36D is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the third embodiment. Figure 36E is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the third embodiment. Figure 37 is a longitudinal sectional view showing an example of the cross-sectional configuration of the pixel portion in the fourth embodiment. Figure 38 is a longitudinal sectional view illustrating an example of a variation in the pixel portion of the fourth embodiment. Figure 39 is a longitudinal sectional view illustrating an example of a variation in the pixel portion of the fourth embodiment. Figure 40 is a longitudinal sectional view illustrating an example of a variation of the pixel portion in the fourth embodiment. Figure 41A is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the fourth embodiment. Figure 41B is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the fourth embodiment. Figure 41C is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the fourth embodiment. Figure 41D is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the fourth embodiment. Figure 41E is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the fourth embodiment. Figure 41F is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the fourth embodiment. Figure 41G is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the fourth embodiment. Figure 42 is a longitudinal sectional view showing an example of the cross-sectional configuration of the pixel portion in the fifth embodiment. Figure 43 is a top view showing the planar composition of the pixel portion in the fifth embodiment. Figure 44A is a longitudinal sectional view showing the cross-section formed by the A-AA section of Figure 43. Figure 44B is a longitudinal sectional view showing the cross-section formed by the B-BB section of Figure 43. Figure 45A is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the fifth embodiment. Figure 45B is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the fifth embodiment. Figure 45C is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the fifth embodiment. Figure 45D is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the fifth embodiment. Figure 45E is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the fifth embodiment. Figure 45F is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the fifth embodiment. Figure 46 is a longitudinal sectional view showing the cross-sectional configuration of the wall-like structure of the pixel portion in the sixth embodiment. Figure 47 is a longitudinal sectional view showing the first variation of the wall-like structure. Figure 48 is a longitudinal sectional view illustrating one step of the manufacturing method of the pixel part in the sixth embodiment. Figure 49 is a longitudinal sectional view showing an example of the cross-sectional configuration of the pixel portion in the sixth embodiment. Figure 50 is a top view showing the planar composition of the pixel portion in the sixth embodiment. Figure 51 is a longitudinal sectional view illustrating the first variation of the pixel portion in the sixth embodiment. Figure 52 is a longitudinal sectional view illustrating the second variation of the pixel portion in the sixth embodiment. Figure 53A is a longitudinal sectional view showing a cross-section of the first configuration example of the pixel part in the seventh embodiment. Figure 53B is a plan view showing the first configuration example of the pixel part in the seventh embodiment. Figure 54A is a longitudinal sectional view showing a cross-section of the second configuration example of the pixel portion in the seventh embodiment. Figure 54B is a plan view showing the second configuration example of the pixel part in the seventh embodiment. Figure 55A is a longitudinal sectional view showing the third configuration example of the pixel portion in the seventh embodiment. Figure 55B is a plan view showing the third configuration example of the pixel part in the seventh embodiment. Figure 56A is a longitudinal sectional view showing the fourth configuration example of the pixel portion in the seventh embodiment. Figure 56B is a plan view showing the fourth configuration example of the pixel part in the seventh embodiment. Figure 57A is a longitudinal sectional view showing the fifth configuration example of the pixel portion in the seventh embodiment. Figure 57B is a plan view showing the fifth configuration example of the pixel portion in the seventh embodiment. Figure 58A is a longitudinal sectional view showing the sixth configuration example of the pixel portion in the seventh embodiment. Figure 58B is a plan view showing the sixth configuration example of the pixel portion in the seventh embodiment. Figure 59A is a longitudinal sectional view illustrating the manufacturing method of the first configuration example of the pixel part in the seventh embodiment. Figure 59B is a longitudinal sectional view illustrating the manufacturing method of the first configuration example of the pixel part in the seventh embodiment. Figure 59C is a longitudinal sectional view illustrating the manufacturing method of the first configuration example of the pixel part in the seventh embodiment. Figure 59D is a longitudinal sectional view illustrating the manufacturing method of the first configuration example of the pixel part in the seventh embodiment. Figure 59E is a longitudinal sectional view illustrating the manufacturing method of the first configuration example of the pixel part in the seventh embodiment. Figure 59F is a longitudinal sectional view illustrating the manufacturing method of the first configuration example of the pixel part in the seventh embodiment. Figure 60A is a longitudinal sectional view illustrating the manufacturing method of the fourth configuration example of the pixel part in the seventh embodiment. Figure 60B is a longitudinal sectional view illustrating the manufacturing method of the fourth configuration example of the pixel part in the seventh embodiment. Figure 60C is a longitudinal sectional view illustrating the manufacturing method of the fourth configuration example of the pixel part in the seventh embodiment. Figure 60D is a longitudinal sectional view illustrating the manufacturing method of the fourth configuration example of the pixel part in the seventh embodiment. Figure 61A is a longitudinal sectional view illustrating the manufacturing method of the fifth configuration example of the pixel part in the seventh embodiment. Figure 61B is a longitudinal sectional view illustrating the manufacturing method of the fifth configuration example of the pixel part in the seventh embodiment. Figure 61C is a longitudinal sectional view illustrating the manufacturing method of the fifth configuration example of the pixel part in the seventh embodiment. Figure 61D is a longitudinal sectional view illustrating the manufacturing method of the fifth configuration example of the pixel part in the seventh embodiment. Figure 61E is a longitudinal sectional view illustrating the manufacturing method of the fifth configuration example of the pixel part in the seventh embodiment. Figure 62 is a block diagram showing an example of the configuration of an electronic device including one embodiment of the present disclosure. Figure 63 is a block diagram showing an example of the general configuration of a vehicle control system. Figure 64 is an explanatory diagram showing one example of the installation location of the vehicle exterior information detection unit and camera unit. Implementation

[0011] The preferred embodiments of this disclosure will now be described in detail with reference to the accompanying drawings. Furthermore, in this specification and drawings, components that substantially have the same functional configuration are omitted from repeated description by using the same symbols.

[0012] Furthermore, the instructions are as follows. 1. First Implementation Form 1.1. Overall Composition of the Camera Device 1.2. Pixel Composition 1.3. Manufacturing Method 2. Second Implementation Form 2.1. Pixel Composition 2.2. Manufacturing Method 2.3. Variation Example 3. Third Implementation Form 3.1. Pixel Composition 3.2. Variation Example 3.3. Manufacturing Method 4. Fourth Implementation Form 4.1. Pixel Composition 4.2. Variation Example 4.3. Manufacturing Method 5. Fifth Implementation Form 5.1. Pixel Composition 5.2. Manufacturing Method 6. Sixth Implementation Form 6.1. Pixel Composition 6.2. Variation Example 6.3. Manufacturing Method 7. Seventh Implementation Form 7.1. Pixel Composition 7.2. Variation Example 8. Eighth Implementation Form 8.1. Pixel Composition 8.2. Manufacturing Method 9. Electronic machines 10. Application Examples

[0013] <1. First Implementation Form> (1.1. Overall Composition of the Camera Device) First, referring to FIG1, the overall configuration of the camera device of the first embodiment disclosed herein will be described. FIG1 is a schematic diagram showing the overall configuration of the camera device 1 of this embodiment.

[0014] As shown in Figure 1, the camera device 1 includes: a pixel portion 13 comprising a plurality of pixels 12 formed on a semiconductor substrate, a vertical driving circuit 14, a horizontal signal processing circuit 15, a horizontal driving circuit 16, an output circuit 17, and a control circuit 18.

[0015] The pixel unit 13 includes a plurality of pixels 12 arranged in a matrix on a semiconductor substrate. Each pixel 12 is, for example, composed of a pixel circuit, which includes a photoelectric conversion unit containing a photodiode, a transmission transistor, an amplification transistor, a selection transistor, and a reset transistor. Alternatively, the pixel circuit may not include a selection transistor. The signal charge output from the photodiode is amplified by the pixel circuit and converted into a pixel signal.

[0016] Furthermore, pixels 12 can be configured using a shared pixel structure. In a shared pixel structure, a portion or all of the pixel circuitry is shared among adjacent plurality of pixels 12. For example, adjacent plurality of pixels 12 can share a pixel circuitry including an amplifying transistor, a selecting transistor, and a resetting transistor following a transmission transistor. That is, the pixel circuitry of adjacent plurality of pixels 12 can be composed of individual photodiodes, individual transmission transistors, a shared floating diffuser (floating diffuser region: FD), a shared amplifying transistor, a shared selecting transistor, and a shared resetting transistor.

[0017] The control circuit 18 controls the operation of various parts of the camera device 1. Specifically, the control circuit 18 generates clock signals and control signals based on the vertical synchronization signal, the horizontal synchronization signal, and the main clock, which serve as the reference for the operation of the vertical drive circuit 14, the horizontal signal processing circuit 15, and the horizontal drive circuit 16. The control circuit 18 can use the generated clock signals and control signals to control the operation of the vertical drive circuit 14, the horizontal signal processing circuit 15, and the horizontal drive circuit 16.

[0018] The vertical drive circuit 14 is configured, for example, by including a shift register. The vertical drive circuit 14 drives the pixels 12 column by column by sequentially selecting and scanning the pixels 12 in the vertical direction. In this way, the vertical drive circuit 14 can read out the pixel signal generated by each pixel 12 corresponding to the amount of light received, and supply it to the horizontal signal processing circuit 15 via the vertical signal line 19.

[0019] The line signal processing circuit 15 sets each row of pixels 12 and performs signal processing such as noise removal on the pixel signals output from pixels 12. For example, the line signal processing circuit 15 can perform Correlated Double Sampling (CDS) processing to remove inherent pattern noise for each pixel 12, and AD (Analog-Digital) conversion processing on the pixel signals output from pixels 12.

[0020] The horizontal drive circuit 16 is configured, for example, by including a shift register. By sequentially outputting horizontal scan pulses and sequentially selecting each of the horizontal signal processing circuits 15, the horizontal drive circuit 16 can make the pixel signal output to the horizontal signal line 20 by each of the horizontal signal processing circuits 15.

[0021] The output circuit 17 outputs the pixel signals sequentially supplied by each of the self-signal processing circuits 15 via the horizontal signal line 20 to the outside of the imaging device 1. For example, the output circuit 17 can perform various digital signal processing such as buffering, black level adjustment, or line unevenness correction on the pixel signals supplied by each of the self-signal processing circuits 15, and then output the processed pixel signals to the outside of the imaging device 1.

[0022] The camera device 1 with the above configuration is a so-called line-AD CMOS (Complementary MOS) image sensor with a line signal processing circuit 15 for performing CDS processing and AD conversion processing for each line of pixel 12.

[0023] (1.2. Pixel Composition) Next, referring to Figures 2 to 4, the configuration of the pixel unit 13 of the imaging device 1 in this embodiment will be described. Figures 2 and 3 are longitudinal sectional views showing an example of the cross-sectional configuration of the pixel unit 13, and Figure 4 is a top view showing the planar configuration of the pixel unit 13. The cross-sectional configuration shown in Figure 2 corresponds to the cross-sectional configuration along section A-AA in Figure 4, and the cross-sectional configuration shown in Figure 3 corresponds to the cross-sectional configuration along section B-BB in Figure 4.

[0024] As shown in Figures 2 and 3, each pixel 12 of the pixel unit 13 includes: a photoelectric conversion unit 110, a planarization film 121, a color filter 120, a wall-like structure 130, a blocking film 140, and a crystal lens 150.

[0025] The photoelectric conversion unit 110 is provided with each pixel 12 separated from each other by the pixel separation layer 111. The photoelectric conversion unit 110 is a photodiode, which is constructed by PN bonding a semiconductor region of a first conductivity type (e.g., p-type) and a semiconductor region of a second conductivity type (e.g., n-type). For example, the photoelectric conversion unit 110 can be constructed by forming an n-type region for each pixel 12 inside the p-type well region formed on a semiconductor layer such as silicon (Si).

[0026] Furthermore, a circuit layer is provided on the side of the photoelectric conversion unit 110 opposite to the light-receiving side (i.e., the side where the crystal lens 150 is provided). This circuit layer includes a pixel circuit that converts the signal charge generated by the photoelectric conversion unit 110 into a pixel signal. In other words, the imaging device 1 of this embodiment is a so-called back-illuminated imaging device.

[0027] The pixel separation layer 111 is made of an insulating material and extends along the normal direction of the plane in which the pixels 12 are arranged, thereby separating the photoelectric conversion unit 110 from each pixel 12. In other words, the pixel separation layer 111 extends along the thickness direction of the semiconductor layer in which the photoelectric conversion unit 110 is disposed, thereby separating the photoelectric conversion unit 110 from each pixel 12. The pixel separation layer 111 can be made of insulating materials such as silicon oxide (SiO₂x), silicon nitride (SiN), or silicon oxynitride (SiON).

[0028] A pinning layer 112 is provided on the surface of the photoelectric conversion unit 110 and at the interface between the photoelectric conversion unit 110 and the pixel separation layer 111. The pinning layer 112 is made of a high dielectric material with a negative fixed charge, such as hafnium oxide (HfO 2), zirconium oxide (ZrO 2), aluminum oxide (Al 2O 3), tantalum oxide (Ta 2O 5), titanium oxide (TiO 2), magnesium oxide (MgO), yttrium oxide (Y 2O 3), or lanthanum oxide. By forming regions with accumulated holes on the surface of the photoelectric conversion unit 110 and at the interface between the photoelectric conversion unit 110 and the pixel separation layer 111, the pinning layer 112 can suppress the generation of dark current in the photoelectric conversion unit 110.

[0029] Furthermore, an anti-reflective layer 113 is provided on the light-receiving side of the pinned layer 112, covering the photoelectric conversion unit 110. The anti-reflective layer 113 is provided using an insulating material with a refractive index lower than that of the high-dielectric material forming the pinned layer 112. In this way, the anti-reflective layer 113 can further suppress the reflection of light incident from the light-receiving side, i.e., the side of the crystal lens 150, onto the anti-reflective layer 113 and the pinned layer 112. The anti-reflective layer 113 can be, for example, made of tantalum oxide (Ta₂O₅).

[0030] On the light-receiving side of the anti-reflective layer 113, a planarization film 121 is continuously and uniformly disposed over a plurality of pixels 12. The planarization film 121 may be formed using insulating materials with high light transmittance (e.g., transmittance of light in the visible light band is approximately 70% or more), such as silicon oxide (SiO x), silicon nitride (SiN), or silicon oxynitride (SiON).

[0031] The planarization film 121 can be continuously disposed with the pixel separation layer 111. Specifically, the planarization film 121 and the pixel separation layer 111 can be continuously disposed with an insulating material such as SiO₂. In this case, since the imaging device 1 can form the planarization film 121 and the pixel separation layer 111 in the same step, the manufacturing process can be simplified.

[0032] On the light-receiving side of the planarization film 121, a color filter 120 is provided for each pixel 12, which is separated from each other by the wall-shaped structure portion 130. The color filter 120 can be formed, for example, by coating an organic resin containing pigments that present red, green, or blue onto the area corresponding to each pixel 12.

[0033] For example, as shown in FIG4, the pixel unit 13 can be configured by arranging a matrix of pixels 12, including red pixels 12R, green pixels 12G, and blue pixels 12B, in a planar manner. Red pixels 12R are pixels that receive red light and include a red color filter. Green pixels 12G are pixels that receive green light and include a green color filter. Blue pixels 12B are pixels that receive blue light and include a blue color filter. In the pixel unit 13, adjacent 2×2 pixels 12 can be treated as a whole, with red pixels 12R, green pixels 12G, and blue pixels 12B arranged in each 2×2 pixel group. That is, the pixel unit 13 can, for example, utilize a so-called 2×2 Bayer arrangement, where red pixels 12R, green pixels 12G, or blue pixels 12B are arranged in each 2×2 pixel group.

[0034] The wall-like structure 130 is a partition wall provided between each of the pixels 12, and is provided by defining the shape by a first wall portion 131 made of insulating material. Specifically, the wall-like structure 130 is formed by the first wall portion 131 surrounding the side surface of the grid-like space between the matrix-like planar arrangement of the pixels 12 and the upper surface of the light-receiving surface.

[0035] Therefore, the internal space surrounded by the first wall portion 131 of the wall-like structure 130 is a gap 133 with a refractive index of approximately 1. Thus, because the refractive index of the gap 133 in the wall-like structure 130 is extremely low, it is easier to satisfy the condition for total internal reflection of incident light at the interface between the gap 133 and the first wall portion 131. Therefore, since the wall-like structure 130 can reflect light incident on it more efficiently at the interface between the gap 133 and the first wall portion 131, it can further suppress crosstalk of incident light crossing the wall-like structure 130 and incident on adjacent pixels 12.

[0036] The structure of the wall-like structure 130 is described in detail below, but it can also be formed using, for example, the following method. Specifically, firstly, after forming temporary walls in a grid pattern in the area between pixels 12, a first wall 131 is formed on the side and top surfaces of the temporary walls to cover them. Secondly, after forming a color filter 120 in the area of ​​pixel 12, an opening 137 is provided on the top surface of the first wall 131. Then, by using wet etching or dry etching through the opening 137 of the first wall 131, the temporary walls inside the first wall 131 are removed, forming a gap 133 inside the first wall 131. Furthermore, after forming the gap 133, the opening 137 of the first wall 131 is closed by the sealing film 140 described later. In this way, the gap 133 inside the wall-like structure 130 is sealed.

[0037] The first wall portion 131 can be configured such that the film thickness on the upper surface of the wall-like structure portion 130 is thicker than the film thickness on the side surface. The upper surface of the wall-like structure portion 130 is exposed to processes such as etching, CVD (Chemical Vapor Deposition), or CMP (Chemical Mechanical Polishing) in the later stages of the manufacturing process. Therefore, by setting the first wall portion 131 on the upper surface of the wall-like structure portion 130 with a thicker film thickness, the process resistance of the manufacturing process can be further improved. For example, in the step of planarizing the upper surface of the color filter 120 and the wall-like structure portion 130 by CMP after the formation of the color filter 120, the first wall portion 131 on the upper surface can be prevented from collapsing.

[0038] A light-shielding portion 135 may be provided below the gap 133 inside the wall-like structure portion 130. The light-shielding portion 135 may be, for example, a single-layer film of titanium (Ti), titanium nitride (TiN), tantalum (Ta), or tantalum nitride (TaN), or a multilayer film of such materials. By blocking incident light between the pixels 12 that is intended to pass through from below the wall-like structure portion 130, the light-shielding portion 135 can further suppress crosstalk between the pixels 12.

[0039] A blocking film 140 is continuously disposed on a plurality of pixels 12 on the light-receiving surface side of the color filter 120. The blocking film 140 is disposed of as an insulating material such as silicon oxide (SiO₂x), silicon nitride (SiN), or silicon oxynitride (SiON). The blocking film 140 is formed on the wall-like structure portion 130 and the color filter 120 by forming the above-mentioned insulating material on the wall-like structure portion 130 and the color filter 120 using a low-coverage film forming method such as CVD, thereby blocking the opening 137 of the first wall portion 131 formed on the upper surface of the wall-like structure portion 130.

[0040] In the pixel portion 13, the opening 137 is only provided in a portion of the first wall portion 131 on the upper surface of the wall-like structure portion 130. Therefore, even if the blocking film 140 is thinner, it can still block the opening 137 formed on the first wall portion 131 on the upper surface of the wall-like structure portion 130. Accordingly, since the distance between the photoelectric conversion unit 110 and the crystal lens 150 can be further shortened in the imaging device 1 of this embodiment, crosstalk between pixels 12 can be suppressed without reducing the light-gathering characteristics of the crystal lens 150.

[0041] However, the occlusion film 140 can be made of an insulating material with a refractive index that is approximately the same as or less than that of the crystal lens 150 described later. Furthermore, "approximately the same" could mean, for example, that the difference between the refractive index of the occlusion film 140 and the refractive index of the crystal lens 150 is within 0.1. According to this configuration, the occlusion film 140 can reduce the possibility of light incident through the crystal lens 150 being reflected at the interface between the crystal lens 150 and the occlusion film 140, thus further increasing the amount of light incident on the photoelectric conversion unit 110.

[0042] For example, if the crystal lens 150 is made of general optical organic resin (refractive index approximately 1.5 to 1.6), the occlusion film 140 may be made of silicon oxynitride (SiON) with a refractive index of 1.58.

[0043] The opening 137 can be provided, for example, between the pixels in the diagonal direction of the matrix-arranged pixels 12, as shown in FIG4. Since the opening 137 is provided in the wall-like structure 130 between the pixels 12, it can be provided between the pixels in the diagonal direction of the pixels 12, thereby allowing for a larger diameter than when it is provided between the pixels in the column or row direction of the pixels 12.

[0044] Since the opening 137 is an inlet for introducing the solution for wet etching or the etching gas for dry etching into the inner side of the first wall portion 131, the configuration that reduces the degree of etching can be omitted. For example, as shown in FIG4, the opening 137 can be provided only between pairs of pixels in the diagonal direction adjacent to the three pixels 12 that receive light of different colors (red pixel 12R, green pixel 12G, and blue pixel 12B in FIG4), instead of being provided between all pixels in the diagonal direction of the pixels 12.

[0045] However, the opening 137 can be positioned between more pixels along the diagonal direction. In this case, the etching process time can be further shortened because the etching solution or etching gas can be introduced into the inner side of the first wall portion 131 more efficiently.

[0046] Furthermore, the opening 137, closed by the occlusion membrane 140, can function as a waveguide with a waveguide effect that draws in incident light. Therefore, the opening 137 can be positioned between multiple diagonal pixels in a matrix arrangement of pixels 12. For example, the opening 137 can be positioned between diagonal pixels adjacent to pixels 12 receiving the same color light. In this case, the opening 137, closed by the occlusion membrane 140, can more strongly draw incident light into each of the adjacent pixels 12 receiving the same color light.

[0047] A crystal carrier lens 150 is provided on the light-receiving surface side of the occlusion film 140 for each pixel 12. Specifically, the crystal carrier lens 150 is configured as a convex lens that focuses incident light onto each pixel 12. In this way, the crystal carrier lens 150 can efficiently direct light to the photoelectric conversion unit 110 provided for each pixel 12. The crystal carrier lens 150 can be formed using transparent organic resins such as styrene-based resins, acrylic resins, styrene-acrylic copolymer resins, or silicone resins, so that the light transmittance in the visible light band is 70% or more.

[0048] According to the imaging device 1 having a pixel section 13 including the above-described configuration, since the diameter of the opening 137 used to form the gap 133 in the wall-like structure 130 between the pixels 12 can be further reduced, even with a thinner film thickness occlusion film 140, the opening 137 can be closed. Therefore, the imaging device 1 does not cause the light-gathering characteristics of the crystal lens 150 to decrease due to height reduction, and crosstalk between the pixels 12 can be suppressed by utilizing the wall-like structure 130 including the gap 133. Therefore, the imaging device 1 can improve sensitivity.

[0049] Furthermore, according to the camera device 1, since the shape of the wall-shaped structure 130 is defined by the first wall portion 131, the shape of the gap 133 provided on the inner side of the wall-shaped structure 130 can be made more stable. Therefore, the camera device 1 can suppress the deviation of crosstalk between pixels 12.

[0050] (1.3. Variation Example) (Examples of variations in wall-like structural parts) Next, referring to Figures 5 to 11, the first to fifth variations of the wall-shaped structural part 130 will be described.

[0051] Figure 5 is a longitudinal sectional view showing a first variation of the wall-like structure 130. As shown in Figure 5, a second wall portion 132 may be further provided inside the first wall portion 131 of the wall-like structure 130. Specifically, the second wall portion 132 is made of the same insulating material as the insulating material constituting the occlusion membrane 140 and is provided in the area of ​​the gap 133 facing the inner side of the wall-like structure 130.

[0052] The second wall portion 132 is formed, for example, by the material constituting the closure membrane 140 entering the gap 133 inside the wall-like structure portion 130 through the opening 137 when the closure membrane 140 is formed to close the opening 137. Therefore, for example, the second wall portion 132 can be provided in the gap 133 inside the wall-like structure portion 130 near the opening 137, and on the other hand, the second wall portion 132 is not provided in the gap 133 inside the wall-like structure portion 130 away from the opening 137.

[0053] Figures 6A and 6B are longitudinal sectional views showing a second variation of the wall-like structure 130. As shown in Figure 6A, the wall-like structure 130 can be provided with an inverted conical shape in which the width narrows towards the photoelectric conversion section 110, opposite to the light-receiving surface. As shown in Figure 6B, the wall-like structure 130 can be provided with a regular conical shape in which the width widens towards the photoelectric conversion section 110, opposite to the light-receiving surface.

[0054] The external shape of the wall-like structure 130 is defined by forming a first wall 131 on the side and top surface of the temporary wall after a temporary wall (not shown as it is removed in a later process) is formed in the area where the wall-like structure 130 is formed, in a manner that covers the temporary wall. Therefore, the wall-like structure 130 can be formed using any conical, inverted conical, or non-conical cross-sectional shape by controlling the cross-sectional shape of the temporary wall. Accordingly, since the wall-like structure 130 is provided to make the cross-sectional shape more stable, the deviation of crosstalk between pixels 12 caused by the wall-like structure 130 can be suppressed on the pixel portion 13 as a whole.

[0055] Figure 7 is a longitudinal sectional view showing a third variation of the wall-like structure 130. As shown in Figure 7, the light-shielding part 135 may not be provided in the gap 133 inside the wall-like structure 130.

[0056] While the light-shielding portion 135 suppresses crosstalk between pixels 12 by blocking incident light intended to pass through the lower part of the wall-shaped structure portion 130, it also reduces the amount of light incident on the photoelectric conversion portion 110. Therefore, when the gap 133 inside the wall-shaped structure portion 130 can be used to sufficiently suppress crosstalk between pixels 12, the light-shielding portion 135 may not be necessary to increase the incident light toward the photoelectric conversion portion 110.

[0057] Figures 8 and 9 are longitudinal sectional views showing a fourth variation of the wall-like structure 130. As shown in Figure 8, the width of the light-shielding portion 135 disposed below the gap 133 may be shorter than the width of the lower part of the gap 133. Furthermore, as shown in Figure 9, the width of the light-shielding portion 135 disposed below the gap 133 may be longer than the width of the lower part of the gap 133.

[0058] As explained in the third variation, while the light-shielding portion 135 suppresses crosstalk between pixels 12, it also reduces the amount of light incident on the photoelectric conversion unit 110. Therefore, the width of the light-shielding portion 135 can be selected by taking into account the balance between suppressing crosstalk between pixels 12 and the amount of light incident on the photoelectric conversion unit 110.

[0059] For example, when the gap 133 inside the wall-like structure 130 can be used to sufficiently suppress crosstalk between pixels 12, the width of the light-shielding portion 135 can be shorter than the width of the lower part of the gap 133 in order to increase the amount of light incident on the photoelectric conversion unit 110. On the other hand, when it is difficult to suppress crosstalk between pixels 12 using the gap 133 inside the wall-like structure 130, the width of the light-shielding portion 135 can be longer than the width of the lower part of the gap 133 in order to further suppress crosstalk between pixels 12.

[0060] Figures 10 and 11 are longitudinal sectional views showing a fifth variation of the wall-like structure 130. As shown in Figure 10, the light-shielding portion 135 disposed below the gap 133 can be disposed above the lower surface of the photoelectric conversion portion 110 of the color filter 120. Also, as shown in Figure 11, the light-shielding portion 135 disposed below the gap 133 can be disposed below the lower surface of the photoelectric conversion portion 110 of the color filter 120.

[0061] The ability of the light-shielding portion 135 to block incident light that is intended to pass through the lower part of the wall-shaped structure portion 130 between the pixels 12 is affected by the incident angle and incident position of the incident light, as well as the position of the light-shielding portion 135. Therefore, by adjusting the position of the color filter 120 in the film thickness direction, the light-shielding portion 135 can more effectively suppress crosstalk between the pixels 12.

[0062] (Example of variations in the configuration of openings) Furthermore, referring to Figures 12 to 15, the first to fourth variations of the configuration of the opening 137 will be described.

[0063] Figure 12 is a top view showing a first variation of the configuration of the opening 137. As shown in Figure 12, the opening 137 can be disposed between the pixels in the diagonal direction of the matrix-arranged pixels 12, between the pixels adjacent to the three pixels 12 that receive light of different colors (red pixel 12R, green pixel 12G, and blue pixel 12B in Figure 12), and between the pixels in the column or row direction that contain the pixel space.

[0064] Figure 13 is a top view showing a second variation of the configuration of the opening 137. As shown in Figure 13, the opening 137 can be provided between all pixels in the diagonal direction of the matrix-arranged pixels 12. The opening 137, blocked by the occlusion film 140, can function as a waveguide with a waveguide effect that pulls in incident light. Therefore, by providing the opening 137 between all pixels in the diagonal direction of the matrix-arranged pixels 12, more incident light can be pulled into the photoelectric conversion unit 110. Furthermore, when more openings 137 are provided, the gap 133 inside the wall-like structure 130 is larger and is uniformly formed within the pixel unit 13. Accordingly, the imaging device 1 can further suppress the deviation of crosstalk between pixels 12.

[0065] Figure 14 is a top view showing a third variation of the configuration of the opening 137. As shown in Figure 14, the opening 137 can be disposed between pixels adjacent to a pixel 12 (red pixel 12R in Figure 14) that receives light of the same color, along the diagonal direction of the matrix-arranged pixels 12. The opening 137, blocked by the occlusion film 140, can function as a waveguide with a waveguide effect that draws in incident light. Therefore, by disposing the opening 137 between pixels adjacent to the pixel 12 that receives light of the same color along the diagonal direction, more incident light can be drawn into the photoelectric conversion section 110 of the pixel 12 that receives light of the same color.

[0066] Figure 15 is a top view showing a fourth variation of the configuration of the opening 137. As shown in Figure 15, the opening 137 can be disposed between pixels adjacent to a pixel 12 receiving light of the same color (red pixel 12R in Figure 15) in the diagonal direction of the matrix-arranged pixels 12, and between pixels in the column or row direction containing that pixel. The opening 137, which is blocked by the occlusion film 140, can function as a waveguide with a waveguide effect that pulls in incident light. Therefore, by distributing the opening 137 between pixels in the diagonal direction adjacent to the pixel 12 receiving light of the same color, more incident light can be pulled into the photoelectric conversion section 110 of the pixel 12 receiving light of the same color.

[0067] (Example of pixel-level variation) Furthermore, referring to Figures 16A and 16B, the first and second variations of the pixel portion 13 will be described.

[0068] Figure 16A is a top view showing a first variation of the pixel unit 13. In this first variation, the pixel unit 13 can be configured such that adjacent 3×3 pixels 12 are treated as a single unit, with a red pixel 12R, a green pixel 12G, and a blue pixel 12B arranged in each 3×3 pixel group. That is, the pixel unit 13 can, for example, utilize a so-called 3×3 Bayer arrangement where red pixels 12R, green pixels 12G, or blue pixels 12B are arranged in each 3×3 pixel group. The configuration of the opening 137 in the pixel unit 13 of this first variation is not limited to the example shown in Figure 16A; the configurations shown in Figures 12 to 15 can also be used similarly.

[0069] Figure 16B is a top view showing a second variation of the pixel unit 13. In this second variation, the pixel unit 13 can be configured such that adjacent 4×4 pixels 12 are treated as a single unit, with a red pixel 12R, a green pixel 12G, and a blue pixel 12B arranged in each 4×4 pixel group. That is, the pixel unit 13 can, for example, utilize a so-called 4×4 Bayer arrangement where red pixels 12R, green pixels 12G, or blue pixels 12B are arranged in each 4×4 pixel group. The configuration of the opening 137 in the pixel unit 13 of this second variation is not limited to the example shown in Figure 16B; the configurations shown in Figures 12 to 15 can also be used similarly.

[0070] (1.4. Manufacturing method) Next, referring to Figures 17 to 26, the manufacturing method of the pixel portion 13 of this embodiment will be described. Figures 17 to 26 are longitudinal sectional views illustrating one step of the manufacturing method of the pixel portion 13.

[0071] First, as shown in FIG17, after a planarization film 121 is formed on the semiconductor layer 100 that forms the photoelectric conversion section 110 for each pixel 12, a light-shielding section 135 and a temporary wall section 134 are sequentially formed on the planarization film 121.

[0072] Specifically, firstly, a photoelectric conversion section 110 is formed by introducing conductive impurities into a semiconductor layer 100 made of silicon (Si). Secondly, after etching away the semiconductor layer 100 except for the area corresponding to the pixel 12, a pinning layer 112 and an anti-reflection layer 113 are formed along the outer shape of the photoelectric conversion section 110. Next, a pixel separation layer 111 is formed by embedding SiO₂ into the space removed by etching between the photoelectric conversion sections 110. Furthermore, a planarization film 121 is formed by further depositing the SiO₂ forming the pixel separation layer 111 onto the anti-reflection layer 113. The planarization film 121 can be planarized using, for example, CMP.

[0073] Next, a light-shielding portion 135 is formed by depositing TiN on the planarization film 121. Then, a temporary wall portion 134 is formed by depositing aluminum-copper alloy (AlCu) or amorphous silicon (a-Si) on the light-shielding portion 135. The temporary wall portion 134 is removed by wet etching or dry etching in subsequent steps to form voids 133.

[0074] Next, as shown in Figure 18, the light-blocking portion 135 and temporary wall portion 134 corresponding to the pixel 12 are removed by photolithography or similar techniques. In this way, the light-blocking portion 135 and temporary wall portion 134, which are left in the grid-like area between the pixels 12, are removed from the planarization film 121 by the area opening of the color filter 120 formed by the subsequent steps.

[0075] Subsequently, as shown in Figure 19, SiO₂ is deposited on the planarization film 121 and the temporary wall portion 134 by means of a film formation method with high coverage, thereby forming the first wall portion 131 on the upper surface and side surface of the temporary wall portion 134.

[0076] Next, as shown in Figure 20, a color filter 120 is formed in the area corresponding to pixel 12. Specifically, after removing the temporary wall portion 134 by photolithography or the like, an ultraviolet-curable resin containing red, green, or blue pigment is applied to the area, and then the ultraviolet-curable resin is cured with ultraviolet light, thereby forming the color filter 120. Since the area where the color filter 120 is formed is separated from each pixel 12 by the temporary wall portion 134, the color filter 120 can be formed in a more stable shape.

[0077] Furthermore, the color configuration of the color filter 120 for each pixel 12 can be a 2×2 Bayer arrangement, a 3×3 Bayer arrangement, or a 4×4 Bayer arrangement, as described above.

[0078] Subsequently, as shown in FIG21, a capping layer 141 is formed by depositing SiON on the color filter 120 and the first wall portion 131. Specifically, after planarizing the upper surface of the first wall portion 131 and the color filter 120 by etching back or CMP, the capping layer 141 is formed on the color filter 120 and the first wall portion 131.

[0079] Next, as shown in Figure 22, a lower antireflective film 162 and a resist layer 161 are sequentially formed on the cover layer 141. The resist layer 161 is made of a general photoresist material and is patterned using photolithography to create openings in the area where the opening 137 will be formed in the subsequent steps. The lower antireflective film 162 is a so-called BARC film, which prevents interference between the incident light and the reflected light by suppressing reflections in the bottom surface of the resist layer 161 during exposure.

[0080] Subsequently, as shown in FIG23, by using the resist layer 161 as a mask, the lower antireflective film 162, the cover layer 141, and the first wall portion 131 are etched to form an opening 137, through which the temporary wall portion 134 is exposed. In addition, the resist layer 161 and the lower antireflective film 162 are removed after the opening 137 is formed.

[0081] Subsequently, as shown in Figure 24, the temporary wall portion 134 is removed by wet etching or dry etching, thereby forming voids 133. Specifically, when the temporary wall portion 134 is made of a-Si, the temporary wall portion 134 is removed by introducing an aqueous solution of tetramethylammonium hydroxide (TMAH) into the interior of the first wall portion 131 through the opening 137, thereby forming voids 133. Furthermore, when the temporary wall portion 134 is made of AlCu, the temporary wall portion 134 is removed by introducing a mixed solution of phosphoric acid, hydrogen peroxide, and water into the interior of the first wall portion 131 through the opening 137, thereby forming voids 133.

[0082] Subsequently, as shown in FIG25, SiON is deposited on the capping layer 141 by a film-forming method with low coating density, such as CVD, thereby forming a sealing film 140. The sealing film 140 closes the opening 137, thereby sealing the gap 133. In this embodiment, the opening 137 is provided between the pixels in the diagonal direction of the matrix-arranged pixels 12 with a diameter smaller than the width between pixels. Therefore, even if the sealing film 140 is a thin film, the opening 137 can be easily closed.

[0083] Furthermore, as shown in FIG26, a crystal lens 150 is formed on the occlusion film 140 for each pixel 12.

[0084] Following the above steps, after forming the temporary wall portion 134 and the first wall portion 131 covering the upper surface and side surfaces of the temporary wall portion 134, the temporary wall portion 134 is removed only through the opening 137 formed in the first wall portion 131, thereby forming the wall-shaped structure portion 130. Accordingly, since the thickness of the occlusion film 140 that closes the opening 137 can be further reduced, the imaging device 1 can further suppress crosstalk between pixels 12 without reducing the light-gathering characteristics through the wall-shaped structure portion 130.

[0085] <2. Second Implementation Form> (2.1. Pixel Composition) Next, referring to FIG27, the configuration of the pixel portion 13 of the second embodiment of the present disclosure will be described. FIG27 is a longitudinal sectional view showing an example of the cross-sectional configuration of the pixel portion 13 of the present embodiment.

[0086] As shown in Figure 27, each pixel 12 of the pixel unit 13 includes: a photoelectric conversion unit 110, a planarization film 121, a color filter 120, a wall-like structure 130, and a crystal lens 150. Since the configuration of the photoelectric conversion unit 110, the planarization film 121, the color filter 120, and the crystal lens 150 is substantially the same as that described in the first embodiment, its description here is omitted.

[0087] The wall-like structure 130 is a partition wall provided between each of the pixels 12, and is provided by defining the shape by a first wall portion 136 made of insulating material. Specifically, the wall-like structure 130 is formed by the first wall portion 136 surrounding the side surface of the grid-like space between the matrix-like planar arrangement of the pixels 12 and the upper surface of the light-receiving surface.

[0088] The internal space surrounded by the first wall portion 136 of the wall-like structure 130 is a gap 133 with a refractive index of approximately 1. Since the refractive index of the gap 133 is extremely low compared to the refractive index of the first wall portion 136, the wall-like structure 130 can more easily satisfy the condition for total internal reflection of incident light at the interface between the gap 133 and the first wall portion 136. Therefore, since the wall-like structure 130 can reflect the light incident on it more efficiently at the interface between the gap 133 and the first wall portion 136, it can further suppress crosstalk of incident light that crosses the wall-like structure 130 and enters adjacent pixels 12.

[0089] The structure of the wall-like structure 130 is described in detail below, but it can also be formed, for example, using the following method. First, after forming a temporary wall in a grid pattern using a reproducible resin in the area between pixels 12, a first wall 136 is formed on the side and top surfaces of the temporary wall to cover the temporary wall. In the second embodiment, the first wall 136 is provided with a porous structure. Accordingly, the temporary wall inside the first wall 136 can be easily decomposed and removed by impregnation of the first wall 136 with a solution or by exposure to ultraviolet light through the first wall 136. Therefore, even if no opening is provided on the top surface of the first wall 136, a gap 133 can be formed inside the first wall 136.

[0090] The first wall portion 136, having a porous structure, can be formed, for example, by selectively removing the organic material after mixing an organic material with an inorganic insulating material constituting the first wall portion 136 and depositing it using methods such as CVD. In the deposited first wall portion 136, the inorganic insulating materials form a strong network structure, and the organic material is dispersed within the network structure of the inorganic insulating material. Therefore, by selectively removing the organic material, the first wall portion 136 has a structure in which a plurality of pores corresponding to the organic material are formed in the network structure of the inorganic insulating material (i.e., a porous structure).

[0091] Examples of such organic materials include α-terpinene (ATRP), which volatilizes due to ultraviolet radiation. Examples of inorganic insulating materials include diethoxymethylsilane (DEMS), a precursor to SiO₂. Furthermore, precursors to inorganic insulating materials such as Si, SiO₂, SiN, SiC, SiCO, SiON, SiCN, SiH, SiOH, SiNH, SiCH, SiCOH, SiONH, or SiCNH can also be used.

[0092] Furthermore, if the first wall portion 136 has a porous structure, it can be formed from a well-known porous low-k material other than the aforementioned material.

[0093] A light-shielding portion 135 may be provided below the gap 133 inside the wall-like structure portion 130. The light-shielding portion 135 may be, for example, a single-layer film of titanium (Ti), titanium nitride (TiN), tantalum (Ta), or tantalum nitride (TaN), or a multilayer film of such materials. By blocking incident light between the pixels 12 that is intended to pass through from below the wall-like structure portion 130, the light-shielding portion 135 can further suppress crosstalk between the pixels 12.

[0094] In the second embodiment, since no opening is provided on the upper surface of the first wall portion 136, no blocking film for closing the opening is provided on the light-receiving surface side of the color filter 120. Therefore, the pixel portion 13 in the second embodiment can further reduce the height of each of the pixels 12.

[0095] (2.2. Manufacturing method) Next, referring to Figures 28A to 28D, the manufacturing method of the pixel portion 13 of this embodiment will be described. Figures 28A to 28D are longitudinal sectional views illustrating one step of the manufacturing method of the pixel portion 13 of this embodiment.

[0096] First, similar to the first embodiment, following the steps shown in FIG17, after forming a planarization film 121 on the semiconductor layer 100 that forms the photoelectric conversion section 110 for each pixel 12, a light-shielding portion 135 and a temporary wall portion 134 are sequentially formed on the planarization film 121. Then, following the steps shown in FIG18, the light-shielding portion 135 and the temporary wall portion 134 in the area corresponding to the pixel 12 are removed. Furthermore, the temporary wall portion 134 is made of an organic resin (e.g., ATRP) that volatilizes upon ultraviolet irradiation.

[0097] Subsequently, as shown in Figure 28A, a mixture of inorganic insulating material and organic material constituting the first wall portion 136 is deposited on the planarization film 121 and the temporary wall portion 134 using CVD or the like, thereby forming the first wall portion 136 on the upper surface and side surface of the temporary wall portion 134. The organic material contained in the first wall portion 136 may be an organic resin (e.g., ATRP) that volatilizes under ultraviolet light.

[0098] Next, as shown in Figure 28B, the organic material contained in the first wall portion 136 is selectively removed by ultraviolet irradiation and heating, and the temporary wall portion 134 is also removed. In this way, a void 133 with a refractive index of approximately 1 is formed on the inner side of the first wall portion 136.

[0099] Next, as shown in Figure 28C, a color filter 120 is formed in the area corresponding to pixel 12. Specifically, an ultraviolet-curable resin containing red, green, or blue pigment is coated on the area on the side of the first wall portion 136 where the gap 133 is formed on the inside. The ultraviolet-curable resin is then cured using ultraviolet light, thereby forming the color filter 120. Since the areas where the color filter 120 is formed are separated from each pixel 12 by the first wall portion 136, the color filter 120 can be formed in a more stable shape. The color arrangement of the color filter 120 for each pixel 12 can be a 2×2 Bayer arrangement, a 3×3 Bayer arrangement, or a 4×4 Bayer arrangement.

[0100] Furthermore, as shown in FIG28D, a crystal lens 150 is formed on each pixel 12 on the color filter 120 and the first wall portion 136. In this way, the pixel portion 13 of the second embodiment is manufactured.

[0101] Based on the above steps, in the second embodiment, the pixel portion 13 can remove the temporary wall portion 134 even without an opening in the first wall portion 136, thus simplifying the formation steps of the wall-shaped structure portion 130. Furthermore, in the second embodiment, the pixel portion 13 is made lower in height by not providing a blocking film on the color filter 120, thus suppressing crosstalk between pixels 12 without reducing light-gathering characteristics through the wall-shaped structure portion 130.

[0102] (2.3. Variation Example) Referring to Figures 29A to 30B, a variation of the pixel portion 13 in this embodiment will be described. Figures 29A to 29C are longitudinal sectional views illustrating one step of the manufacturing method of the pixel portion 13 in the first variation. Figures 30A to 30B are longitudinal sectional views illustrating one step of the manufacturing method of the pixel portion 13 in the second variation.

[0103] (Example 1 of the variations) For example, as shown in Figure 29A, after the steps shown in Figure 28B, a wall protective film 138 can be further provided on the first wall portion 136 and the planarization film 121. The wall protective film 138 is made of an inorganic insulating material such as silicon oxide (SiO₂x), silicon nitride (SiN), or silicon oxynitride (SiON), and is provided along the shape of the first wall portion 136 and the planarization film 121. The wall protective film 138 can protect the first wall portion 136, whose strength is reduced due to the porous structure, from damage in subsequent manufacturing processes.

[0104] Next, as shown in FIG29B, a color filter 120 is formed in the area corresponding to pixel 12. Specifically, after coating the area between the wall protective films 138 with an ultraviolet-curable resin containing red, green, or blue pigments, the ultraviolet-curable resin is cured using ultraviolet light, thereby forming the color filter 120. Since the area where the color filter 120 is formed is separated from each pixel 12 by the first wall 136 and the wall protective film 138, the color filter 120 can be formed in a more stable shape. The color arrangement of the color filter 120 for each pixel 12 can be a 2×2 Bayer arrangement, a 3×3 Bayer arrangement, or a 4×4 Bayer arrangement. Furthermore, as shown in FIG29C, a crystal lens 150 is formed on the color filter 120 and the wall protective film 138 for each pixel 12.

[0105] (Second variation example) For example, as shown in FIG. 30A, after the steps shown in FIG. 29B, a filter protection film 151 is further provided on the color filter 120 and the wall protection film 138. The filter protection film 151 is made of an inorganic insulating material such as silicon oxide (SiO₂x), silicon nitride (SiN), or silicon oxynitride (SiON), and is provided on the color filter 120 and the wall protection film 138. The filter protection film 151 can protect the color filter 120 from subsequent manufacturing processes and flatten the unevenness formed by the color filter 120 and the wall protection film 138. Then, as shown in FIG. 30B, a crystal lens 150 is formed on the filter protection film 151 for each pixel 12.

[0106] <3. Third Implementation Form> (3.1. Pixel Composition) Next, referring to FIG31, the configuration of the pixel portion 13 of the third embodiment of the present disclosure will be described. FIG31 is a longitudinal sectional view showing an example of the cross-sectional configuration of the pixel portion 13 of the present embodiment.

[0107] As shown in Figure 31, each pixel 12 of the pixel unit 13 includes: a photoelectric conversion unit 110, a planarization film 121, a color filter 120, a wall-like structure 130, a blocking film 140, and a crystal lens 150. Since the configuration of the photoelectric conversion unit 110, the planarization film 121, the color filter 120, and the crystal lens 150 is substantially the same as that described in the first embodiment, its description here is omitted.

[0108] The wall-like structure 130 is a partition wall provided between each of the pixels 12, and is provided by defining its shape with a first wall portion 131 made of insulating material. Specifically, the wall-like structure 130 is formed by the first wall portion 131 surrounding the side of the grid-like space between the matrix-like planar arrangement of the pixels 12. Furthermore, the first wall portion 131 is not provided on the upper surface of the light-receiving surface, and the open upper surface of the first wall portion 131 is blocked by a blocking film 140 provided on the wall-like structure 130.

[0109] The internal space, which is surrounded by the first wall portion 131 of the wall-like structure 130 on the side and the upper surface by the occlusion film 140, is a gap 133 with a refractive index of approximately 1. Therefore, since the refractive index of the gap 133 is extremely low compared to the refractive index of the first wall portion 131, the wall-like structure 130 more easily satisfies the condition for total internal reflection of incident light at the interface between the gap 133 and the first wall portion 131. Thus, because the wall-like structure 130 can reflect light incident on it more efficiently at the interface between the gap 133 and the first wall portion 131, it can further suppress crosstalk of incident light crossing the wall-like structure 130 and incident on adjacent pixels 12.

[0110] A light-shielding portion 135 may be provided below the gap 133 inside the wall-like structure portion 130. The light-shielding portion 135 may be, for example, a single-layer film of titanium (Ti), titanium nitride (TiN), tantalum (Ta), or tantalum nitride (TaN), or a multilayer film of such materials. By blocking incident light between the pixels 12 that is intended to pass through from below the wall-like structure portion 130, the light-shielding portion 135 can further suppress crosstalk between the pixels 12.

[0111] An occlusion film 140 is continuously disposed on the light-receiving surface side of the color filter 120, covering a plurality of pixels 12. The occlusion film 140 is disposed of, for example, an insulating material such as silicon oxide (SiO₂), silicon nitride (SiN), or silicon oxynitride (SiON). The occlusion film 140 is deposited as a thick film on the wall-like structure portion 130 and the color filter 120 by a low-coverage film deposition method such as CVD, thereby closing the upper surface of the wall-like structure portion 130 (that is, the open upper surface of the first wall portion 131).

[0112] The second wall portion 132 is formed, for example, by the material of the sealing film 140 entering the inner side of the first wall portion 131 when the sealing film 140 is formed to block the upper surface of the wall-shaped structure portion 130. The second wall portion 132 can be uniformly provided on the inner side of the first wall portion 131 and the upper surface of the light-shielding portion 135.

[0113] In the third embodiment, the upper surface of the first wall portion 131 is uniformly opened, and the opened upper surface of the first wall portion 131 is closed by a sealing film 140. Therefore, the pixel portion 13 of the third embodiment can more reliably form gaps 133 between the color filters 120 without using openings (through holes). Therefore, the pixel portion 13 of the third embodiment can more reliably suppress crosstalk between pixels 12 by means of the wall-like structure portion 130.

[0114] (3.2. Variation Example) Referring to Figures 32 to 35, a variation of the pixel portion 13 in this embodiment will be described. Figures 32 to 35 are longitudinal sectional views illustrating a variation of the pixel portion 13 in this embodiment.

[0115] As shown in Figure 32, the occlusion film 140 can be thinner than the pixel portion 13 shown in Figure 31. For example, the occlusion film 140 is formed as a thick film to close the open upper surface of the first wall portion 131. However, if the occlusion film 140 is a thicker film, it is not easy to suppress crosstalk between pixels 12 by increasing the height of the pixel portion 13. Therefore, the occlusion film 140 can be thinned by CMP.

[0116] Furthermore, as shown in Figure 33, the height of the first wall portion 131 may be higher than the height of the color filter 120. Conversely, as shown in Figure 34, the height of the first wall portion 131 may be lower than the height of the color filter 120.

[0117] As described later, the first wall portion 131 and the color filter 120 are simultaneously etched back when the upper surface of the first wall portion 131 is opened. Therefore, the heights of the first wall portion 131 and the color filter 120 may differ due to the difference in the amount of etching during the etch-back process. In this embodiment, the pixel portion 13 can absorb the height difference between the first wall portion 131 and the color filter 120 by means of the blocking film 140 provided on the first wall portion 131 and the color filter 120. Therefore, in this case, the pixel portion 13 of this embodiment can also appropriately form a gap 133 between the color filters 120.

[0118] Furthermore, as shown in FIG35, the widths (i.e., the distances between pixels 12) of the color filters 120 can be different. The distances between pixels 12 may vary depending on the arrangement of the pixels 12. For example, when the pixels 12 are equally arranged in a matrix in the mutually orthogonal vertical and horizontal directions, the distances between pixels 12 in the vertical and horizontal directions and the distances between pixels 12 in the diagonal direction may be different. In this case, the pixel portion 13 of this embodiment can also form gaps 133 between the color filters 120 by appropriately controlling the film thickness of the occlusion film 140 provided on the first wall portion 131 and the color filters 120.

[0119] (3.3. Manufacturing method) Next, referring to Figures 36A to 36E, the manufacturing method of the pixel portion 13 of this embodiment will be described. Figures 36A to 36E are longitudinal sectional views illustrating one step of the manufacturing method of the pixel portion 13 of this embodiment.

[0120] First, similar to the first embodiment, by following the steps shown in Figures 17 to 20, a planarization film 121, a light-shielding portion 135, a temporary wall portion 134, a first wall portion 131, and a color filter 120 are sequentially formed on the semiconductor layer 100 on which the photoelectric conversion portion 110 is formed for each pixel 12.

[0121] Subsequently, as shown in FIG36A, the first wall portion 131 and the color filter 120 are uniformly etched back using dry etching, wet etching, or CMP. In doing so, the first wall portion 131 disposed on the upper surface of the temporary wall portion 134 is removed, and the upper surface of the first wall portion 131 is opened, thereby exposing the temporary wall portion 134.

[0122] Secondly, as shown in Figure 36B, the exposed temporary wall portion 134 is selectively removed. For example, if the temporary wall portion 134 is made of AlCu, it can be removed by wet etching using a mixed solution of phosphoric acid, hydrogen peroxide, and water. Alternatively, if the temporary wall portion 134 is made of a-Si, it can be removed by dry etching without bias using SF6.

[0123] Subsequently, as shown in Figure 36C, SiON is deposited as a thick film on the first wall portion 131 and the color filter 120 using a film deposition method with low coating density, such as CVD, thereby forming a blocking film 140. The blocking film 140 blocks the open upper surface of the first wall portion 131, thereby forming a void 133.

[0124] Subsequently, as shown in Figure 36D, the occlusion membrane 140 is thinned by CMP to a degree that does not disrupt the closure of the voids 133 formed by the occlusion membrane 140. Alternatively, the thinning of the occlusion membrane 140 may not be performed.

[0125] Furthermore, as shown in FIG36E, a crystal lens 150 is formed on the occlusion film 140 for each pixel 12. In this way, the pixel portion 13 of the third embodiment is manufactured.

[0126] Based on the above steps, the pixel portion 13 of the third embodiment can simplify the formation steps of the wall-like structure portion 130 including the gap 133. Therefore, the pixel portion 13 of the third embodiment can suppress crosstalk between pixels 12 by using the wall-like structure portion 130 provided at a lower cost.

[0127] <4. Fourth Implementation Form> (4.1. Pixel Composition) Next, referring to FIG37, the configuration of the pixel portion 13 of the fourth embodiment of this disclosure will be described. FIG37 is a longitudinal sectional view showing an example of the cross-sectional configuration of the pixel portion 13 of this embodiment.

[0128] As shown in Figure 37, each pixel 12 of the pixel unit 13 includes: a photoelectric conversion unit 110, a planarization film 121, a color filter 120, a wall-like structure 130, a blocking film 140, and a crystal lens 150. Since the configuration of the photoelectric conversion unit 110, the planarization film 121, the color filter 120, and the crystal lens 150 is substantially the same as that described in the first embodiment, its description here is omitted.

[0129] The wall-like structure 130 is a partition wall provided between each of the pixels 12, and is provided by defining its shape with a first wall portion 139 made of insulating material. Specifically, the wall-like structure 130 is formed by the first wall portion 139 surrounding the side of the grid-like space between the matrix-like planar arrangement of the pixels 12. Furthermore, the first wall portion 139 is not provided on the upper surface of the light-receiving surface, and the open upper surface of the first wall portion 139 is blocked by a blocking film 140 provided on the wall-like structure 130.

[0130] The internal space, which is surrounded by the first wall portion 139 of the wall-like structure 130 on the side and the upper surface by the occlusion film 140, is a gap 133 with a refractive index of approximately 1. Therefore, since the refractive index of the gap 133 is extremely low compared to the refractive index of the first wall portion 139, the wall-like structure 130 more easily satisfies the total internal reflection condition for incident light at the interface between the gap 133 and the first wall portion 139. Thus, because the wall-like structure 130 can reflect light incident on it more efficiently at the interface between the gap 133 and the first wall portion 139, it can further suppress crosstalk of incident light crossing the wall-like structure 130 and incident on adjacent pixels 12.

[0131] The first wall portion 139 is made of an inorganic insulating material such as silicon oxide (SiO₂x), silicon nitride (SiN), or silicon oxynitride (SiON), and is disposed on the side of the color filter 120. The first wall portion 139 may be made of the same insulating material as the planarization film 121, or it may be made of an insulating material different from the planarization film 121.

[0132] A light-shielding portion 135 may be provided below the gap 133 inside the wall-like structure portion 130. The light-shielding portion 135 may be, for example, a single-layer film of titanium (Ti), titanium nitride (TiN), tantalum (Ta), or tantalum nitride (TaN), or a multilayer film of such materials. By blocking incident light between the pixels 12 that is intended to pass through from below the wall-like structure portion 130, the light-shielding portion 135 can further suppress crosstalk between the pixels 12.

[0133] An occlusion film 140 is continuously disposed on the light-receiving surface side of the color filter 120, covering a plurality of pixels 12. The occlusion film 140 is disposed of, for example, an insulating material such as silicon oxide (SiO₂), silicon nitride (SiN), or silicon oxynitride (SiON). The occlusion film 140 is deposited as a thick film on the wall-like structure portion 130 and the color filter 120 by a low-coverage film deposition method such as CVD, thereby closing the upper surface of the wall-like structure portion 130 (that is, the open upper surface of the first wall portion 139).

[0134] The second wall portion 132 is formed, for example, by the material of the sealing film 140 entering the inner side of the first wall portion 139 when the sealing film 140 is formed to block the upper surface of the wall structure portion 130. The second wall portion 132 can be uniformly provided on the inner side of the first wall portion 139 and the upper surface of the light-shielding portion 135.

[0135] In the fourth embodiment, the upper surface of the first wall portion 139 is uniformly opened, and the opened upper surface of the first wall portion 139 is closed by the sealing film 140. Therefore, the pixel portion 13 of the fourth embodiment can more reliably form gaps 133 between the color filters 120 without using openings (through holes). Therefore, the pixel portion 13 of the fourth embodiment can more reliably suppress crosstalk between pixels 12 by means of the wall-like structure portion 130.

[0136] (4.2. Variation Example) Referring to Figures 38-40, a variation of the pixel portion 13 in this embodiment will be described. Figures 38-40 are longitudinal sectional views illustrating a variation of the pixel portion 13 in this embodiment.

[0137] As shown in Figure 38, the occlusion film 140 can be made thinner than that shown in Figure 37. For example, the occlusion film 140 is formed as a thick film to close the open upper surface of the first wall portion 139. However, when the occlusion film 140 is a thick film, it is not easy to suppress crosstalk between pixels 12 by increasing the height of the pixel portion 13. Therefore, the occlusion film 140 can be made thinner by CMP.

[0138] As shown in Figure 39, the widths (i.e., the distances between pixels 12) of the color filters 120 can be different. The distances between pixels 12 may vary depending on their arrangement. For example, when pixels 12 are arranged equally in a matrix in mutually orthogonal vertical and horizontal directions, the distances between pixels 12 in the vertical and horizontal directions and between pixels 12 in the diagonal direction may be different. In this case, the pixel portion 13 of this embodiment can also form gaps 133 between the color filters 120 by appropriately controlling the film thickness of the occlusion film 140 formed on the first wall portion 139 and the color filters 120.

[0139] As shown in Figure 40, the configuration that is higher than the planarization film 121 (i.e., the light incident surface side) can be offset from the configuration that is lower than the planarization film 121 (i.e., the opposite side to the light incident surface side) in the direction of light incidence. This offset is called pupil correction, and is performed, for example, in pixels 12 located in areas with large light incident angles, such as the periphery of the pixel area.

[0140] Specifically, the centers of the crystal lens 150, the occlusion film 140, the wall-like structure 130, and the color filter 120 can be offset relative to the centers of the photoelectric conversion unit 110 and the planarization film 121 in the direction of light incidence. In this case, the pixel unit 13 of this embodiment can more efficiently direct light with a large incident angle to the photoelectric conversion unit 110. Therefore, even in pixels 12 located at the periphery of the pixel area, the pixel unit 13 of this embodiment can more efficiently direct light to the photoelectric conversion unit 110.

[0141] The aforementioned pupil correction can be performed not only on the pixel unit 13 of the fourth embodiment, but also on the pixel units 13 of the first to third embodiments and the pixel unit 13 of the fifth embodiment described later. That is, in the pixel units 13 of the first to third and fifth embodiments, the configuration that is higher than the planarization film 121 can also be offset in the direction of light incidence relative to the configuration that is lower than the planarization film 121.

[0142] (4.3. Manufacturing method) Next, referring to Figures 41A to 41G, the manufacturing method of the pixel portion 13 of this embodiment will be described. Figures 41A to 41G are longitudinal sectional views illustrating one step of the manufacturing method of the pixel portion 13 of this embodiment.

[0143] First, similar to the first embodiment, by means of the steps shown in FIG17 and FIG18, a planarization film 121, a light-shielding portion 135, and a temporary wall portion 134 are sequentially formed on the semiconductor layer 100 on which the photoelectric conversion portion 110 is formed for each pixel 12.

[0144] Secondly, as shown in Figure 41A, SiOx, SiN, or SiON are deposited on the planarization film 121 and the temporary wall portion 134 by a film formation method with high coverage, and a first wall portion 139 is formed on the upper surface and side surface of the temporary wall portion 134.

[0145] Subsequently, as shown in FIG41B, the first wall portion 139 is uniformly etched back using dry etching, wet etching, or CMP. Specifically, the first wall portion 139 disposed on the planarization film 121 and the first wall portion 139 disposed on the temporary wall portion 134 are removed by dry etching, wet etching, or CMP. In this way, by removing the first wall portion 139 disposed on the upper surface of the temporary wall portion 134, the upper surface of the first wall portion 139 is opened, and the temporary wall portion 134 is exposed.

[0146] Next, as shown in FIG41C, the exposed temporary wall portion 134 is selectively removed. For example, if the temporary wall portion 134 is made of AlCu, it can be removed by wet etching using a mixed solution of phosphoric acid, hydrogen peroxide, and water. If the temporary wall portion 134 is made of a-Si, it can be removed by dry etching without bias using SF6. Thus, only the light-shielding portion 135 and the first wall portion 139 extending from both sides of the light-shielding portion 135 along the normal direction of the surface of the planarization film 121 are provided on the planarization film 121.

[0147] Subsequently, as shown in Figure 41D, a color filter 120 is formed in the area corresponding to pixel 12. Specifically, in the area where the light-shielding portion 135 and the first wall portion 139 are not provided, an ultraviolet-curable resin containing red, green, or blue pigments is applied, and then the ultraviolet-curable resin is cured using ultraviolet light, thereby forming the color filter 120. Since the color filter 120 is formed in an area defined by the temporary wall portion 134, its shape can be set more stably. The color arrangement of the color filter 120 for each pixel 12 can be a 2×2 Bayer arrangement, a 3×3 Bayer arrangement, or a 4×4 Bayer arrangement.

[0148] Subsequently, as shown in Figure 41E, SiON is deposited as a thick film on the first wall portion 139 and the color filter 120 using a film deposition method with low coating density, such as CVD, thereby forming a blocking film 140. In this way, the blocking film 140 blocks the open upper surface of the first wall portion 139, thereby forming a void 133.

[0149] Subsequently, as shown in Figure 41F, the occlusion membrane 140 is thinned by CMP to a degree that does not disrupt the occlusion of the voids 133 formed by the occlusion membrane 140. Alternatively, the thinning of the occlusion membrane 140 may not be performed.

[0150] Furthermore, as shown in FIG41G, a crystal lens 150 is formed on the occlusion film 140 for each pixel 12. In this way, the pixel portion 13 of the fourth embodiment is manufactured.

[0151] Based on the above steps, the pixel portion 13 of the fourth embodiment can simplify the formation steps of the wall-like structure portion 130 including the gap 133. Therefore, the pixel portion 13 of the fourth embodiment can suppress crosstalk between pixels 12 by using the wall-like structure portion 130 provided at a lower cost.

[0152] <5. Fifth Implementation Form> (5.1. Pixel Composition) Next, referring to FIG42, the configuration of the pixel portion 13 of the fifth embodiment disclosed herein will be described. FIG42 is a longitudinal sectional view showing an example of the cross-sectional configuration of the pixel portion 13 of this embodiment.

[0153] As shown in Figure 42, each pixel 12 of the pixel unit 13 includes: a photoelectric conversion unit 110, a planarization film 121, a blocking layer 122, a color filter 120, a wall-like structure 130, a filter protection film 151, a blocking film 140, and a crystal lens 150. Since the configurations of the photoelectric conversion unit 110, the planarization film 121, the color filter 120, and the crystal lens 150 are substantially the same as those described in the first embodiment, their description here is omitted.

[0154] The barrier layer 122 is made of an insulating material with an etching rate different from that of the color filter 120, and is disposed on the planarization film 121. The barrier layer 122 prevents etching from proceeding to the layer below the barrier layer 122 when the color filter 120 is separated from each pixel 12 by etching.

[0155] The wall-shaped structure 130 includes a first wall portion 1312 and a gap 133, and is disposed in the space between the color filters 120 that are separated from each other by etching.

[0156] The first wall portion 1312 is formed, for example, by the material constituting the sealing film 140 entering the space between the color filters 120 during the formation of the sealing film 140 that seals the upper surface of the space between the color filters 120. The first wall portion 1312 can be provided, for example, on the side surface of the color filters 120 and the upper surface of the barrier layer 122. The gap 133 is formed by sealing the upper surface of the space between the color filters 120 using the sealing film 140.

[0157] The refractive index of the gap 133 is approximately 1, which is much lower than that of the first wall portion 1312. Therefore, the wall-shaped structure 130 more easily satisfies the total internal reflection condition for incident light at the interface between the gap 133 and the first wall portion 1312. Thus, since the wall-shaped structure 130 can reflect light incident on it more efficiently at the interface between the gap 133 and the first wall portion 1312, it can further suppress crosstalk of incident light that crosses the wall-shaped structure 130 and enters adjacent pixels 12.

[0158] The filter protective film 151 is made of inorganic insulating materials such as silicon oxide (SiO₂x), silicon nitride (SiN), or silicon oxynitride (SiON), and is disposed on the color filter 120. The filter protective film 151 is provided to protect the color filter 120 from subsequent manufacturing processes. For example, the filter protective film 151 can protect the color filter 120 from the stripping process of the resist used in the etching step of the color filter 120.

[0159] A blocking film 140 is continuously disposed on the light-receiving side of the filter protective film 151, covering a plurality of pixels 12. The blocking film 140 is disposed of, for example, an insulating material such as silicon oxide (SiO₂), silicon nitride (SiN), or silicon oxynitride (SiON). The blocking film 140 is deposited on the filter protective film 151 as a thick film using a low-coverage film deposition method such as CVD, thereby blocking the upper surface of the space between each of the color filters 120.

[0160] Furthermore, the size of the gap 133 between the color filters 120 can vary between each pixel 12. The size of the gap 133 between the color filters 120 will be explained with reference to Figures 43, 44A, and 44B. Figure 43 is a top view showing the planar configuration of the pixel portion 13 in the fifth embodiment. Figure 44A is a longitudinal sectional view showing the cross-sectional configuration along the A-AA section of Figure 43, and Figure 44B is a longitudinal sectional view showing the cross-sectional configuration along the B-BB section of Figure 43.

[0161] For example, as shown in FIG43, the pixel unit 13 can be configured by arranging a matrix of pixels 12, including red pixels 12R, green pixels 12G, and blue pixels 12B, in a planar manner.

[0162] As shown in Figure 44A, since the color filters 120 arranged in a matrix are relatively wide along their diagonal direction, they are easily embedded by the occlusion film 140, making it easier to make the first wall portion 1312 thicker. On the other hand, as shown in Figure 44B, since the color filters 120 arranged in a matrix are relatively narrow along their column or row direction, they are easily closed by the occlusion film 140, making it easier to make the first wall portion 1312 thinner. Therefore, the gap 133A between the color filters 120 arranged in the diagonal direction of the pixels 12 can be formed smaller than the gap 133B between the color filters 120 arranged in the column or row direction of the pixels 12.

[0163] In the fifth embodiment, the upper surface of the space between the color filters 120 that are separated from each pixel 12 is blocked by a blocking film 140 through etching. Therefore, the pixel portion 13 of the fifth embodiment can stabilize the shape of the color filters 120 in a simpler way. Furthermore, the pixel portion 13 of the fifth embodiment can suppress crosstalk between pixels 12 by providing gaps 133 between the color filters 120.

[0164] (5.2. Manufacturing method) Next, referring to Figures 45A to 45F, the manufacturing method of the pixel portion 13 of this embodiment will be described. Figures 45A to 45F are longitudinal sectional views illustrating one step of the manufacturing method of the pixel portion 13 of this embodiment.

[0165] First, as shown in FIG45A, after a planarization film 121 is formed on the semiconductor layer 100 that forms the photoelectric conversion section 110 for each pixel 12, a barrier layer 122 is sequentially formed on the planarization film 121. For example, the barrier layer 122 is made of SiN or SiON with an etching rate different from that of the color filter 120, and a thin film of 10 nm to 15 nm can be disposed on the planarization film 121.

[0166] Next, as shown in Figure 45B, a color filter 120 is formed in the area corresponding to pixel 12. Specifically, after coating the area corresponding to pixel 12 with an ultraviolet-curable resin containing red, green, or blue pigments, the ultraviolet-curable resin is cured using ultraviolet light, thereby forming the color filter 120. The color filter 120 is patterned for each pixel 12 in the subsequent etching process. Therefore, the area where the color filter 120 is set only needs to be approximately consistent with the area corresponding to pixel 12.

[0167] Subsequently, as shown in Figure 45C, a filter protective film 151 and a resist layer 161 are formed on the color filter 120. Specifically, firstly, a filter protective film 151 is formed by depositing SiON on the color filter 120. Then, a resist layer 161 is formed on the filter protective film 151. The resist layer 161 is made of a general photoresist material and is patterned using photolithography to open the area where the opening 123 will be formed in a later step.

[0168] Next, as shown in Figure 45D, using the resist layer 161 as a mask, openings 123 are formed in the area corresponding to the pixels 12 by etching the filter protective film 151 and the color filter 120. Furthermore, a stop layer 122 with a different etching rate than the color filter 120 is provided below the color filter 120. Therefore, the etching of the color filter 120 stops at the surface of the stop layer 122.

[0169] Subsequently, as shown in Figure 45E, after removing the resist layer 161, SiON is deposited on the filter protective membrane 151 as a thick film using a film-forming method such as CVD with low coating density, thereby forming a blocking membrane 140. Thus, since the blocking membrane 140 blocks the upper surface of the space between the color filters 120, a gap 133 is formed in the space between the color filters 120.

[0170] Subsequently, as shown in FIG45F, after the occlusion film 140 is thinned and planarized by CMP, a crystal lens 150 is formed on the occlusion film 140 for each pixel 12. In this way, the pixel portion 13 of the fifth embodiment is manufactured.

[0171] Based on the above steps, in the fifth embodiment, the pixel portion 13 can be etched to separate each of the color filters 120 from each pixel 12, thus making it easier to stabilize the shape of the color filters 120. Furthermore, in the fifth embodiment, the pixel portion 13 can suppress crosstalk between pixels 12 by using the gaps 133 provided between each of the color filters 120.

[0172] <6. Sixth Implementation Form> (6.1. Pixel Composition) Next, referring to FIG46, the configuration of the pixel portion 13 of the sixth embodiment disclosed herein will be described. FIG46 is a longitudinal sectional view showing the cross-sectional configuration of the wall-like structural portion 130 provided by the pixel portion 13 of this embodiment.

[0173] As shown in Figure 46, the wall-like structure 130 disposed between the color filters 120 is formed by surrounding the side surface of the space between the color filters 120 and the upper surface of the light-receiving surface with a first wall 131 made of insulating material. The internal space surrounded by the first wall 131 is formed into a vacuum state gap 133 with a refractive index of approximately 1 by sealing a portion of the opening 137 disposed on the upper surface of the first wall 131 with a sealing membrane 140.

[0174] Furthermore, a light-shielding portion 135 is provided in the internal space surrounded by the first wall portion 131. The light-shielding portion 135 may be, for example, a single-layer film of titanium (Ti), titanium nitride (TiN), tantalum (Ta), or tantalum nitride (TaN), or a multilayer film of such materials. By blocking incident light intended to pass through between the pixels 12 from the lower part of the wall-shaped structure portion 130, the light-shielding portion 135 can suppress crosstalk between the pixels 12.

[0175] Here, in the wall-shaped structure 130 of this embodiment, the lower end of the color filter 120 is positioned lower than the lower end of the gap 133. Furthermore, the lower end of the gap 133 is the lower end of the vacuum space within the internal space surrounded by the first wall 131, corresponding in FIG. 46 to the upper surface of the light-shielding portion 135. On the other hand, when the light-shielding portion 135 is not provided, the lower end of the gap 133 corresponds to the upper surface of the planarization film 121 within the internal space surrounded by the first wall 131.

[0176] The positional relationship between the lower end of the color filter 120 and the lower end of the gap 133 is affected by the stress applied to the first wall portion 131 on the side of the gap 133. Specifically, when the lower end of the color filter 120 is located above the lower end of the gap 133, a structurally greater tensile stress is applied to the side of the first wall portion 131 near the interface between the lower end of the color filter 120 and the planarization film 121. In this case, the possibility of cracks forming in the first wall portion 131 on the side increases.

[0177] In the wall-like structure 130 of this embodiment, by positioning the lower end of the color filter 120 further below the lower end of the gap 133, the tensile stress at the interface between the lower end of the color filter 120 and the planarization film 121 can be suppressed from being affected by the first wall portion 131. Accordingly, since the wall-like structure 130 can reduce the magnitude of the tensile stress acting on the side of the first wall portion 131 of the gap 133, the possibility of cracks forming in the first wall portion 131 on the side can be reduced.

[0178] (6.2. Variation Example) Referring to Figure 47, etc., the first to third variations of the wall-shaped structural portion 130 will be described. The first to third variations of the wall-shaped structural portion 130 are variations designed to further reduce the possibility of cracks forming in the first wall portion 131 on the side side.

[0179] Figure 47 is a longitudinal sectional view showing a first variation of the wall-like structural portion 130. As shown in Figure 47, the first wall portion 131 can be configured such that the width of the lower side of the side is greater than the width of the upper side. The tensile stress acting on the side of the first wall portion 131 mainly acts more strongly on the lower side. Therefore, by making the width of the lower side of the side of the first wall portion 131 greater than the width of the upper side, the stress resistance of the first wall portion 131 on the side can be improved more efficiently. Therefore, the wall-like structural portion 130 can further reduce the possibility of cracks forming in the structure containing the voids 133.

[0180] In a second variation of the wall-like structure 130, the light-shielding portion 135 may be made of a light-shielding material with lower rigidity than Ti, TiN, Ta, or TaN. Specifically, in the wall-like structure 130, the light-shielding portion 135 may be made of a light-shielding metallic material such as copper (Cu) or aluminum (Al). By making the light-shielding portion 135 of a low-rigidity metallic material, the tensile stress acting on the first wall portion 131 on the side side can be prevented from becoming excessive due to deformation of the light-shielding portion 135 itself. Therefore, the wall-like structure 130 can further reduce the possibility of cracks forming in the first wall portion 131 on the side side.

[0181] In a third variation of the wall-like structure 130, the color filter 120 may be made of a photocurable resin containing pigments that exhibit red, green, or blue colors. Since the color filter 120 is made of a photocurable resin that is less susceptible to thermal expansion or contraction than a thermocurable resin, stress caused by thermal expansion or contraction can be suppressed. Accordingly, since the wall-like structure 130 can reduce the magnitude of the tensile stress acting on the first wall portion 131 on the side surface, the possibility of cracks forming on the first wall portion 131 on the side surface can be further reduced.

[0182] (6.3. Manufacturing method) Referring to FIG48, a method for manufacturing the pixel portion 13 of this embodiment will be described. FIG48 is a longitudinal sectional view illustrating one step of the method for manufacturing the pixel portion 13 of this embodiment.

[0183] First, similar to the first embodiment, by following the steps shown in Figures 17 and 18, a planarization film 121, a light-shielding portion 135, and a temporary wall portion 134 are sequentially formed on the semiconductor layer 100 on which the photoelectric conversion portion 110 is formed for each pixel 12.

[0184] Subsequently, as shown in FIG48, after a mask 163 composed of SiO₂ or the like is provided on the upper surface of the temporary wall portion 134, the entire planarization film 121 is etched. In this way, the upper surface of the planarization film 121 in the area where the color filter 120 is provided is located below the upper surface of the light-shielding portion 135 covered by the temporary wall portion 134.

[0185] Subsequently, similar to the first embodiment, after forming the first wall portion 131 and the color filter 120, the temporary wall portion 134 is removed by etching through the opening 137, following the steps shown in Figures 19 to 26. Then, the pixel portion 13 of the sixth embodiment is manufactured by forming an occlusion film 140 and a crystal lens 150 on the color filter 120 and the wall-like structure portion 130.

[0186] According to the above steps, the pixel portion 13 in the sixth embodiment can reduce the tensile stress acting on the first wall portion 131 on the side side by controlling the positions of the lower ends of the color filter 120 and the gap 133 respectively. Therefore, the pixel portion 13 in the sixth embodiment can further suppress the possibility of cracks forming on the first wall portion 131 on the side side.

[0187] <7. Seventh Implementation Form> (7.1. Pixel Composition) Next, referring to Figures 49 and 50, the configuration of the pixel portion 13 of the seventh embodiment of this disclosure will be described. Figure 49 is a longitudinal sectional view showing an example of the cross-sectional configuration of the pixel portion 13 of this embodiment, and Figure 50 is a top view showing the planar configuration of the pixel portion 13 of this embodiment. Figure 49, for example, corresponds to the cross-section in the diagonal direction of Figure 50.

[0188] As shown in Figure 49, each pixel 12 of the pixel unit 13 includes: a photoelectric conversion unit 110, a planarization film 121, a color filter 120, a wall-like structure 130, an occlusion film 140, and a crystal lens 150. Since the configuration of the photoelectric conversion unit 110, the planarization film 121, the color filter 120, the occlusion film 140, and the crystal lens 150 is substantially the same as that described in the first embodiment, its description here is omitted.

[0189] The wall-like structure 130 is a partition wall provided between each of the pixels 12, and is defined by a first wall portion 131 made of insulating material. A light-shielding portion 135 with light-shielding properties is provided below the gap 133 inside the wall-like structure 130, and the upper surface of the wall-like structure 130 (that is, the open upper surface of the first wall portion 131) is sealed by a sealing film 140. The internal space surrounded by the first wall portion 131 of the wall-like structure 130 is a gap 133 with a refractive index of approximately 1.

[0190] In the seventh embodiment, the wall-like structure 130 is configured such that the width of the central portion in the vertical direction of the void 133 is greater than the width of the upper and lower portions. That is, the wall-like structure 130 is configured such that the longitudinal cross-sectional shape of the void 133 is cylindrical. Such a wall-like structure 130 can be formed by constructing a first wall portion 131 in a manner that has tensile stress. For example, the first wall portion 131 can be constructed using silicon oxide (SiO₂x) formed by multiple cycles of ALD (Atomic Layer Deposition). Accordingly, the first wall portion 131 can be constructed as a film with tensile stress by changing the film formation conditions (e.g., RF output or pressure) for each cycle.

[0191] Furthermore, as shown in FIG50, the tensile stress in the first wall portion 131 also acts in the in-plane direction of the membrane, thus constituting a membrane with tensile stress in the planar direction as well. Therefore, the wall-like structural portion 130 including the voids 133 can be formed into a cylindrical shape even if it is planar. In this case, each of the pixels 12 (red pixel 12R, green pixel 12G, and blue pixel 12B) can be a planar shape with each side curved inward.

[0192] In the seventh embodiment, the wall-like structural portion 130 forms the gap 133 into a cylindrical shape by means of the first wall portion 131 having tensile stress, thereby further improving the structural strength of the gap 133. Therefore, the pixel portion 13 in the seventh embodiment can suppress the increase of crosstalk between pixels 12 by suppressing the collapse of the gap 133.

[0193] (7.2. Variation Example) Referring to Figures 51 and 52, the first and second variations of the pixel portion 13 in this embodiment will be described.

[0194] Figure 51 is a longitudinal sectional view illustrating a first variation of the pixel portion 13 of this embodiment. As shown in Figure 51, the first wall portion 131 can be composed of a laminated film having two different films stacked on top of each other. Specifically, the first wall portion 131 can be composed of a laminated film having a SiO x film 131A and a SiN film 131B stacked sequentially from the void 133 side. The SiO x film 131A is a silicon oxide film formed by ALD, and the SiN film 131B is a silicon nitride film formed by plasma CVD. The first wall portion 131 can be configured to have tensile stress on the entire two layers of the SiO x film 131A and the SiN film 131B.

[0195] Figure 52 is a longitudinal sectional view illustrating a second variation of the pixel portion 13 of this embodiment. As shown in Figure 52, the first wall portion 131 can be composed of a laminated film having three different films stacked on it. Specifically, the first wall portion 131 can be composed of a laminated film having SiO x film 131A, SiN film 131B, and TiN film 131C stacked sequentially from the void 133 side. SiO x film 131A is a silicon oxide film formed by ALD, SiN film 131B is a silicon nitride film formed by plasma CVD, and TiN film 131C is a titanium nitride film formed by sputtering. The first wall portion 131 can be configured to have tensile stress on the entire three layers of SiO x film 131A, SiN film 131B, and TiN film 131C.

[0196] As in the first and second variations, even if the first wall portion 131 is a laminated film, it can be configured as a film with tensile stress. Accordingly, since the gap 133 surrounded by the first wall portion 131 is formed by a cylindrical shape in which the width of the central portion in the vertical direction is greater than the width of the upper and lower portions, the wall-like structural portion 130 can further improve the structural strength of the gap 133. Therefore, by suppressing the collapse of the gap 133, the pixel portion 13 can suppress the increase of crosstalk between pixels 12.

[0197] <8. Eighth Implementation Form> (8.1. Pixel Composition) Next, referring to Figures 53A to 58B, the first to sixth configuration examples of the pixel portion 13 of the eighth embodiment of this disclosure will be described. In this embodiment, the pixel portion 13 further includes a support pillar or partition wall supporting the first wall portion 131 inside the gap 133. Accordingly, since the pixel portion 13 of this embodiment can increase the strength of the wall-like structure portion 130, the collapse of the gap 133 is suppressed, thereby suppressing the increase of crosstalk between pixels 12.

[0198] Figure 53A is a longitudinal sectional view showing a cross-section of the first configuration example of the pixel unit 13, and Figure 53B is a plan view showing the first configuration example of the pixel unit 13. As shown in Figures 53A and 53B, in the first configuration example, a partition wall 125 is provided inside the gap 133 to divide the gap 133 into two spaces.

[0199] Specifically, the partition wall 125 is configured to extend horizontally, dividing the gap 133 into two spaces, upper and lower. The partition wall 125 may be made of insulating materials such as silicon oxide (SiO₂x), silicon nitride (SiN), or silicon oxynitride (SiON).

[0200] Furthermore, the opening 137 of the first wall portion 131 on the upper surface of the wall-like structure portion 130 is configured to connect the spaces above and below the gaps 133 divided by the partition wall 125 by passing through the partition wall 125. Accordingly, even when the interior of the wall-like structure portion 130 is divided into a plurality of spaces, gaps 133 can be formed in all of the plurality of spaces.

[0201] Figure 54A is a longitudinal sectional view showing a cross-section of the second configuration example of the pixel section 13, and Figure 54B is a plan view showing the second configuration example of the pixel section 13. As shown in Figures 54A and 54B, in the second configuration example, a support column 126 supporting the first wall section 131 of the upper surface is provided inside the gap 133.

[0202] Specifically, the support column 126 extends vertically between the first wall portion 131 and the light-shielding portion 135 on the upper surface, thereby supporting the first wall portion 131 of the upper surface. The support column 126 may be made of insulating materials such as silicon oxide (SiO₂x), silicon nitride (SiN), or silicon oxynitride (SiON). Furthermore, the in-plane cross-section of the support column 126 may be circular, triangular, or quadrilateral.

[0203] Furthermore, the opening 137 of the first wall portion 131 provided on the upper surface of the wall-like structure 130 can be provided with its planar position offset relative to the support column 126. Accordingly, the wall-like structure 130 can be formed such that the opening 137 and the support column 126 do not interfere with each other.

[0204] Figure 55A is a longitudinal sectional view showing a cross-section of the third configuration example of the pixel unit 13, and Figure 55B is a plan view showing the third configuration example of the pixel unit 13. As shown in Figures 55A and 55B, in the third configuration example, a plurality of partition walls 125 dividing the gap 133 into three spaces are provided inside the gap 133.

[0205] Specifically, a plurality of partition walls 125 are arranged to extend horizontally, dividing the gap 133 into three spaces vertically. The plurality of partition walls 125 may be constructed from insulating materials such as silicon oxide (SiO₂x), silicon nitride (SiN), or silicon oxynitride (SiON). By providing a plurality of partition walls 125, the wall-like structure 130 can be further strengthened.

[0206] Furthermore, the opening 137 of the first wall portion 131 on the upper surface of the wall-like structure portion 130 is configured to connect the three spaces of the gaps 133 divided by the plurality of partition walls 125 by passing through the two partition walls 125 respectively. Accordingly, even when the interior of the wall-like structure portion 130 is divided into a plurality of spaces, gaps 133 can be formed in all of the plurality of spaces.

[0207] Figure 56A is a longitudinal sectional view showing a cross-section of the fourth configuration example of the pixel unit 13, and Figure 56B is a plan view showing the fourth configuration example of the pixel unit 13. As shown in Figures 56A and 56B, in the fourth configuration example, a partition wall 125 is provided inside the gap 133 to support the first wall portion 131 of the upper surface and to divide the gap 133 into a plurality of spaces in the in-plane direction.

[0208] Specifically, the partition wall 125 is configured to extend vertically between the first wall portion 131 and the light-shielding portion 135 on the upper surface, and divides the wall-shaped structure portion 130 between the pixels 12 into two parts, left and right. The partition wall 125 may be made of insulating materials such as silicon oxide (SiO x), silicon nitride (SiN), or silicon oxynitride (SiON).

[0209] Furthermore, the opening 137 of the first wall portion 131 provided on the upper surface of the wall-like structure portion 130 is provided in each of the plurality of spaces of the gap 133 separated by the partition wall 125. Accordingly, even when the interior of the wall-like structure portion 130 is divided into a plurality of spaces, the gap 133 can be formed in all of the plurality of spaces.

[0210] Figure 57A is a longitudinal sectional view showing a cross-section of the fifth configuration example of the pixel unit 13, and Figure 57B is a plan view showing the fifth configuration example of the pixel unit 13. As shown in Figures 57A and 57B, in the fifth configuration example, two partition walls 125A and 125B are provided inside the gap 133 to divide the gap 133 into four spaces.

[0211] Specifically, partition wall 125A is configured to extend horizontally, dividing the gap 133 into two spaces vertically. Partition wall 125B is configured to extend vertically between the first wall portion 131 and the light-shielding portion 135 on the upper surface, dividing the wall-like structure portion 130 between pixels 12 into two parts, left and right. Partition walls 125A and 125B can be made of insulating materials such as silicon oxide (SiO₂x), silicon nitride (SiN), or silicon oxynitride (SiON), respectively. By providing partition walls 125A and 125B, the strength of the wall-like structure portion 130 can be further improved.

[0212] Furthermore, the opening 137 of the first wall portion 131 on the upper surface of the wall-like structure 130 is configured to connect the two spaces of the gap 133 divided by the partition wall 125A by passing through the partition wall 125A. The opening 137 of the first wall portion 131 on the upper surface of the wall-like structure 130 is provided in each of the plurality of spaces of the gap 133 separated by the partition wall 125B. Accordingly, even when the interior of the wall-like structure 130 is divided into a plurality of spaces, the gap 133 can be formed in all of the plurality of spaces.

[0213] Figure 58A is a longitudinal sectional view showing a cross-section of the sixth configuration example of the pixel unit 13, and Figure 58B is a plan view showing the sixth configuration example of the pixel unit 13. As shown in Figures 58A and 58B, in the sixth configuration example, a plurality of partition walls 125 are provided inside the gap 133 to support the first wall portion 131 of the upper surface and to divide the gap 133 into a plurality of spaces in the in-plane direction.

[0214] Specifically, a plurality of partition walls 125 are provided to extend vertically between the first wall portion 131 and the light-shielding portion 135 on the upper surface, and to divide the wall-like structure portion 130 between the pixels 12 into three parts, left and right. The plurality of partition walls 125 may be made of insulating materials such as silicon oxide (SiO₂x), silicon nitride (SiN), or silicon oxynitride (SiON). By providing a plurality of partition walls 125, the strength of the wall-like structure portion 130 can be further improved.

[0215] Furthermore, the opening 137 provided in the first wall portion 131 of the wall-like structure portion 130 is provided in each of the plurality of spaces separated by the plurality of partition walls 125. Accordingly, even when the interior of the wall-like structure portion 130 is divided into a plurality of spaces, the gap 133 can be formed in all of the plurality of spaces.

[0216] In the eighth embodiment, the wall-like structure 130 further enhances the strength of the first wall portion 131 constituting the gap 133 by providing a partition wall 125 or a support column 126 inside the gap 133. Therefore, the pixel portion 13 in the eighth embodiment can suppress the increase of crosstalk between pixels 12 by suppressing the collapse of the gap 133.

[0217] (8.2. Manufacturing method) Referring to Figures 59A to 59F, a manufacturing method for a first configuration example of the pixel portion 13 of this embodiment will be described. Figures 59A to 59F are longitudinal sectional views illustrating the manufacturing method of the first configuration example of the pixel portion 13 of this embodiment.

[0218] First, as shown in FIG59A, after a planarization film 121 is formed on the semiconductor layer 100 that forms the photoelectric conversion section 110 for each pixel 12, a light-shielding section 135, a first temporary wall section 134A, a separator wall 125, and a second temporary wall section 134B are sequentially formed on the planarization film 121. On the second temporary wall section 134B, a mask 163 is formed to open the area corresponding to the pixel 12. The first temporary wall section 134A and the second temporary wall section 134B are layers that are removed by wet etching or dry etching in subsequent steps to form the gap 133, and are made of aluminum-copper alloy (AlCu) or amorphous silicon (a-Si).

[0219] Subsequently, as shown in Figure 59B, the first temporary wall portion 134A, the partition wall 125, and the second temporary wall portion 134B corresponding to the pixel 12 are removed using photolithography or similar techniques. This removes the grid-like area between the remaining pixels 12 from the planarization film 121, which is formed by the area opening of the color filter 120 in subsequent steps.

[0220] Secondly, as shown in Figure 59C, SiO x is deposited on the planarization film 121 and the second temporary wall portion 134B by means of a film formation method with high coverage, and the first wall portion 131 is formed on the upper surface and side surface of the first temporary wall portion 134A, the partition wall 125 and the second temporary wall portion 134B.

[0221] Subsequently, as shown in FIG59D, a color filter 120 is formed in the region after the removal of the first temporary wall portion 134A, the partition wall 125, and the second temporary wall portion 134B. Then, a cover layer 141 is formed by depositing SiON on the color filter 120 and the first wall portion 131.

[0222] Next, as shown in FIG59E, an opening 137 is formed by etching a portion of the cover layer 141. The opening 137 is configured to penetrate the partition wall 125, thereby exposing the first temporary wall portion 134A and the second temporary wall portion B.

[0223] Subsequently, as shown in FIG59F, the first temporary wall portion 134A and the second temporary wall portion 134B are removed by wet etching or dry etching through the opening 137, thereby forming a void 133. For example, when the first temporary wall portion 134A and the second temporary wall portion 134B are made of a-Si, the first temporary wall portion 134A and the second temporary wall portion 134B are selectively removed by introducing an aqueous solution of tetramethylammonium hydroxide (TMAH) into the interior of the first wall portion 131. Furthermore, when the first temporary wall portion 134A and the second temporary wall portion 134B are made of AlCu, the first temporary wall portion 134A and the second temporary wall portion 134B are selectively removed by introducing a mixed solution of phosphoric acid, hydrogen peroxide and water into the interior of the first wall portion 131.

[0224] Subsequently, similar to the first embodiment, the occlusion film 140 and the crystal lens 150 are formed by the steps shown in FIG25 and FIG26, thereby manufacturing the first configuration example of the pixel portion 13 of the eighth embodiment.

[0225] Furthermore, referring to Figures 60A to 60D, a manufacturing method for the fourth configuration example of the pixel portion 13 of this embodiment will be described. Figures 60A to 60D are longitudinal sectional views illustrating the manufacturing method of the fourth configuration example of the pixel portion 13 of this embodiment.

[0226] First, as shown in FIG60A, after a planarization film 121 is formed on the semiconductor layer 100 that forms the photoelectric conversion section 110 for each pixel 12, a light-shielding section 135 and a temporary wall section 134 are sequentially formed on the planarization film 121. The temporary wall section 134 is a layer that is removed by wet etching or dry etching in a later step to form the gap 133, and is made of aluminum-copper alloy (AlCu) or amorphous silicon (a-Si).

[0227] Furthermore, by using photolithography, the temporary wall portion 134 corresponding to the opening of the mask 163, which forms the area corresponding to pixel 12 and the area forming the partition wall 125, is removed. In this way, the temporary wall portion 134, which leaves a grid-like area between pixels 12, is removed from the planarization film 121. Also, slots for forming the partition wall 125 are provided in the temporary wall portion 134 in a manner that divides the temporary wall portion 134 into two.

[0228] Subsequently, as shown in Figure 60B, SiO x is deposited on the planarization film 121 and the temporary wall portion 134 by a film formation method with high coverage, thereby forming the first wall portion 131 on the upper surface and the side surface. Furthermore, by embedding the slot formed in the temporary wall portion 134 with SiO x, a partition wall 125 is formed.

[0229] Next, as shown in FIG60C, a color filter 120 is formed in the area corresponding to pixel 12 by photolithography or the like. Then, a cover layer 141 is formed by depositing SiON on the color filter 120 and the first wall portion 131.

[0230] Subsequently, as shown in FIG60D, an opening 137 is formed by etching a portion of the capping layer 141. The temporary wall portion 134 is removed by wet etching or dry etching through the opening 137, thereby forming a void 133. For example, if the temporary wall portion 134 is made of a-Si, it can be selectively removed by introducing an aqueous solution of tetramethylammonium hydroxide (TMAH) into the interior of the first wall portion 131. Furthermore, if the temporary wall portion 134 is made of AlCu, it can be selectively removed by introducing a mixed solution of phosphoric acid, hydrogen peroxide, and water into the interior of the first wall portion 131.

[0231] Subsequently, similar to the first embodiment, the occlusion film 140 and the crystal lens 150 are formed by the steps shown in FIG25 and FIG26, thereby manufacturing the second configuration example of the pixel portion 13 of the eighth embodiment.

[0232] Next, referring to FIGS. 61A to 61E, a manufacturing method for the fifth configuration example of the pixel portion 13 of this embodiment will be described. FIGS. 61A to 61E are longitudinal sectional views illustrating the manufacturing method of the fifth configuration example of the pixel portion 13 of this embodiment.

[0233] First, as shown in FIG61A, after a planarization film 121 is formed on the semiconductor layer 100 that forms the photoelectric conversion section 110 for each pixel 12, a light-shielding section 135, a first temporary wall section 134A, a separator wall 125A, and a second temporary wall section 134B are sequentially formed on the planarization film 121. The first temporary wall section 134A and the second temporary wall section 134B are layers that are removed by wet etching or dry etching in subsequent steps to form gaps 133, and are made of aluminum-copper alloy (AlCu) or amorphous silicon (a-Si).

[0234] Furthermore, by using photolithography, which creates openings in the mask 163 corresponding to the area of ​​pixel 12 and forming the partition wall 125B, the first temporary wall portion 134A, partition wall 125A, and second temporary wall portion 134B corresponding to the openings in the mask 163 are removed from the planarization film 121. This removes the grid-like area between the remaining pixels 12 from the planarization film 121. Additionally, slots for forming the partition wall 125B are provided in the first temporary wall portion 134A and the second temporary wall portion 134B in a manner that divides the first temporary wall portion 134A and the second temporary wall portion 134B into two parts.

[0235] Subsequently, as shown in Figure 61B, SiO₂x is deposited on the planarization film 121 and the temporary wall portion 134 using a film formation method with high coverage. The first wall portion 131 is formed on the upper surface and side surface of the first temporary wall portion 134A, the partition wall 125A, and the second temporary wall portion 134B. Furthermore, the partition wall 125B is formed by embedding the slots formed in the first temporary wall portion 134A and the second temporary wall portion 134B with SiO₂x.

[0236] Next, as shown in FIG61C, a color filter 120 is formed in the area after the removal of the first temporary wall portion 134A, the partition wall 125A, and the second temporary wall portion 134B. Then, a cover layer 141 is formed by depositing SiON on the color filter 120 and the first wall portion 131.

[0237] Subsequently, as shown in FIG61D, an opening 137 is formed by etching a portion of the cover layer 141. The opening 137 is configured to penetrate the partition wall 125A, thereby exposing the first temporary wall portion 134A and the second temporary wall portion B.

[0238] Secondly, as shown in Figure 61E, the first temporary wall portion 134A and the second temporary wall portion 134B are removed by wet etching or dry etching through the opening 137, thereby forming a void 133. For example, when the first temporary wall portion 134A and the second temporary wall portion 134B are made of a-Si, the first temporary wall portion 134A and the second temporary wall portion 134B are selectively removed by introducing an aqueous solution of tetramethylammonium hydroxide (TMAH) into the interior of the first wall portion 131. Furthermore, when the first temporary wall portion 134A and the second temporary wall portion 134B are made of AlCu, the first temporary wall portion 134A and the second temporary wall portion 134B are selectively removed by introducing a mixed solution of phosphoric acid, hydrogen peroxide, and water into the interior of the first wall portion 131.

[0239] Subsequently, similar to the first embodiment, the occlusion film 140 and the crystal lens 150 are formed by the steps shown in FIG25 and FIG26, thereby manufacturing the third configuration example of the pixel portion 13 of the eighth embodiment.

[0240] According to the above steps, in the eighth embodiment, the pixel portion 13 can form a partition wall 125 or a support column 126 inside the gap 133 surrounded by the first wall portion 131. Therefore, since the pixel portion 13 in the eighth embodiment can further improve the strength of the wall structure portion 130, the collapse of the gap 133 is suppressed, thereby suppressing the increase of crosstalk between pixels 12.

[0241] <9. Electronic Machines> Next, referring to FIG62, an electronic device including the camera device 1 of this embodiment will be described. FIG62 is a block diagram showing an example of the configuration of the electronic device 1000 including the camera device 1 of this embodiment. For example, the electronic device 1000 includes a camera such as a digital camera or video camera, a mobile terminal device with a camera function, a photocopier that uses a camera device in the image reading unit, and all electronic devices that use a camera device in the image capturing unit (photoelectric conversion unit). The camera device can be mounted in the electronic device 1000 in the form of a chip, or it can be mounted in the electronic device 1000 in the form of a module that integrates the camera unit, the signal processing unit, or the optical system.

[0242] As shown in Figure 62, the electronic device 1000 includes: an optical lens 1001, a shutter device 1002, an imaging device 1, a DSP (Digital Signal Processor) circuit 1011, a frame memory 1014, a display unit 1012, a memory unit 1015, an operation unit 1013, and a power supply unit 1016. The DSP circuit 1011, frame memory 1014, display unit 1012, memory unit 1015, operation unit 1013, and power supply unit 1016 are interconnected via a bus cable 1017.

[0243] The optical lens 1001 images the incident light from the subject onto the imaging surface of the imaging device 1. The shutter device 1002 controls whether the incident light illuminates or blocks the imaging device 1.

[0244] The camera device 1 converts the amount of incident light imaged onto the imaging surface by the optical lens 1001 into an electrical signal in pixel units and outputs it as a pixel signal.

[0245] The DSP circuit 1011 is a signal processing circuit that performs general camera signal processing on the pixel signals output from the imaging device 1. For example, the DSP circuit 1011 can perform white balance processing, de-mosaic processing, or gamma correction processing.

[0246] Frame memory 1014 is a temporary data storage unit. Frame memory 1014 is appropriately used for data storage during signal processing in DSP circuit 1011.

[0247] The display unit 1012 is, for example, a panel-type display device comprising a liquid crystal panel or an organic EL (Electro Luminescence) panel. The display unit 1012 can display animations or still images captured by the camera device 1.

[0248] The memory unit 1015 includes memory media such as hard disk drives, optical disks, or semiconductor memory, and records the animations or still images captured by the camera device 1 on the memory media.

[0249] Based on the user's operation, the operation unit 1013 outputs operation instructions for various functions of the electronic device 1000.

[0250] The power supply unit 1016 is the operating power supply for the DSP circuit 1011, the frame memory 1014, the display unit 1012, the memory unit 1015, and the operation unit 1013. The power supply unit 1016 can provide appropriate power to these components.

[0251] <10. Application Examples> The technology disclosed herein (the Technology) can be applied to a variety of products. For example, the Technology disclosed herein can be implemented as a device mounted on any type of mobile body such as automobiles, electric vehicles, hybrid electric vehicles, motorcycles, bicycles, personal mobility devices, airplanes, drones, ships, or robots.

[0252] Figure 63 is a block diagram showing a schematic configuration example of a vehicle control system, which is one example of a mobile body control system to which the technology disclosed herein can be applied.

[0253] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Figure 63, the vehicle control system 12000 includes: a drive system control unit 12010, a vehicle body system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and an integrated control unit 12050. Furthermore, the integrated control unit 12050 is functionally configured as follows: a microcomputer 12051, an audio / image output unit 12052, and an in-vehicle network I / F (Interface) 12053.

[0254] The drive system control unit 12010 controls the operation of devices associated with the vehicle's drive system according to various programs. For example, the drive system control unit 12010 functions as a drive force generating device such as an internal combustion engine or drive motor for generating drive force for the vehicle, a drive force transmission mechanism for transmitting drive force to the wheels, a steering mechanism for adjusting the vehicle's steering angle, and a braking device for generating braking force for the vehicle.

[0255] The vehicle system control unit 12020 controls the operation of various devices equipped on the vehicle body according to various programs. For example, the vehicle system control unit 12020 functions as a control device for keyless access systems, smart key systems, power windows, or various lights such as headlights, taillights, brake lights, turn signals, or fog lights. In this case, radio waves emitted from a portable device that replaces the key or various switch signals can be input to the vehicle system control unit 12020. The vehicle system control unit 12020 accepts such radio wave or signal inputs and controls the vehicle's door lock devices, power window devices, lights, etc.

[0256] The exterior information detection unit 12030 detects information about the exterior of the vehicle equipped with the vehicle control system 12000. For example, a camera unit 12031 is connected to the exterior information detection unit 12030. The exterior information detection unit 12030 causes the camera unit 12031 to capture images of the exterior of the vehicle and receives the captured images. Based on the received images, the exterior information detection unit 12030 can perform object detection processing or distance detection processing, such as detection of people, vehicles, obstacles, signs, or text on the road surface.

[0257] The camera unit 12031 is a light sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The camera unit 12031 can output the electrical signal as an image or as distance measurement information. Furthermore, the light received by the camera unit 12031 can be visible light or non-visible light such as infrared light.

[0258] The in-vehicle information detection unit 12040 detects information inside the vehicle. A driver status detection unit 12041, for example, detecting the driver's state, is connected to the in-vehicle information detection unit 12040. The driver status detection unit 12041 includes, for example, a camera that captures images of the driver. Based on the detection information input from the driver status detection unit 12041, the in-vehicle information detection unit 12040 can calculate the driver's fatigue level or concentration level, and can also determine whether the driver is drowsy.

[0259] The microcomputer 12051 can calculate the control target values ​​of the drive force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle obtained by the external information detection unit 12030 or the internal information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform coordinated control for the purpose of realizing the functions of ADAS (Advanced Driver Assistance System), including collision avoidance or shock mitigation, distance-based following, speed maintenance, collision warning, or lane departure warning.

[0260] Furthermore, the microcomputer 12051 controls the drive force generating device, steering mechanism, or braking device based on information about the vehicle's surroundings obtained by the external information detection unit 12030 or the internal information detection unit 12040, thereby enabling coordinated control for purposes such as autonomous driving that does not rely on the driver's operation.

[0261] Furthermore, the microcomputer 12051 can output control commands to the vehicle system control unit 12020 based on the external information obtained by the external information detection unit 12030. For example, the microcomputer 12051 can perform coordinated control to prevent glare, such as controlling the headlights and switching the high beams to low beams, based on the position of the vehicle in front or oncoming vehicle detected by the external information detection unit 12030.

[0262] The audio-visual output unit 12052 is an output device that can visually or audibly notify passengers or the outside of the vehicle of information, sending an output signal of at least one of sound and image. In the example of Figure 63, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are shown as output devices. The display unit 12062 may include, for example, at least one of an in-vehicle display and an in-vehicle display screen.

[0263] Figure 64 is an example of the installation position of the camera unit 12031.

[0264] In Figure 64, camera units 12101, 12102, 12103, 12104, and 12105 are used as camera unit 12031.

[0265] Cameras 12101, 12102, 12103, 12104, and 12105 are located, for example, on the front bumper, side mirrors, rear bumper, tailgate, and the upper part of the windshield inside the vehicle 12100. The camera 12101 on the front bumper and the camera 12105 on the upper part of the windshield inside the vehicle primarily acquire images of the front of the vehicle 12100. The cameras 12102 and 12103 on the rearview mirrors primarily acquire images of the sides of the vehicle 12100. The camera 12104 on the rear bumper or tailgate primarily acquires images of the rear of the vehicle 12100. The camera 12105 on the upper part of the windshield inside the vehicle is mainly used for detecting vehicles, pedestrians, obstacles, traffic lights, traffic signs, or lane markings ahead.

[0266] Furthermore, Figure 64 shows an example of the imaging range of camera units 12101 to 12104. Imaging range 12111 represents the imaging range of camera unit 12101 located on the front bumper; imaging ranges 12112 and 12113 represent the imaging ranges of camera units 12102 and 12103 located on the side mirrors, respectively; and imaging range 12114 represents the imaging range of camera unit 12104 located on the rear bumper or tailgate. For example, by overlaying the image data captured by camera units 12101 to 12104, a top-down view of vehicle 12100 can be obtained.

[0267] At least one of the camera units 12101 to 12104 may have the function of acquiring distance information. For example, at least one of the camera units 12101 to 12104 may be a stereo camera containing a plurality of camera elements, or a camera element having pixels for phase difference detection.

[0268] For example, the microcomputer 12051, based on distance information obtained from cameras 12101 to 12104, calculates the distances between itself and each three-dimensional object within the camera range 12111 to 12114, and the temporal changes in those distances (relative speed to vehicle 12100). It can then specifically identify the three-dimensional object closest to vehicle 12100's path, and that is traveling in approximately the same direction as vehicle 12100 at a specific speed (e.g., 0 km / h or higher), as the vehicle ahead. Furthermore, the microcomputer 12051 can set a pre-defined distance to the vehicle ahead and perform automatic braking control (including stop-and-go control) and automatic acceleration control (including start-and-go control). This allows for coordinated control aimed at achieving autonomous driving without driver intervention.

[0269] For example, the microcomputer 12051 can classify three-dimensional object data related to three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, or other three-dimensional objects based on distance information obtained from the cameras 12101 to 12104, and capture this data for automatic obstacle avoidance. For example, the microcomputer 12051 can identify obstacles around the vehicle 12100 as obstacles visible to the driver of the vehicle 12100 and obstacles that are difficult to see. Furthermore, the microcomputer 12051 determines the collision risk, indicating the degree of danger of collision with each obstacle. When encountering a situation where the collision risk is above a set value and a collision is possible, it can provide driving support to avoid collision by outputting an alarm to the driver through the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or evasive steering through the drive system control unit 12010.

[0270] At least one of the camera units 12101 to 12104 can be an infrared camera that detects infrared light. For example, the microcomputer 12051 can identify a pedestrian by determining whether a pedestrian exists in the captured images of the camera units 12101 to 12104. The pedestrian identification is performed by, for example, extracting the sequence of feature points from the captured images of the camera units 12101 to 12104 (which are infrared cameras), and performing pattern matching processing on a series of feature points representing the outline of an object to determine whether it is a pedestrian sequence. When the microcomputer 12051 determines that a pedestrian exists in the captured images of the camera units 12101 to 12104 and identifies the pedestrian, the audio-visual output unit 12052 controls the display unit 12062 to overlay and display a square outline for emphasis on the identified pedestrian. Furthermore, the audio-visual output unit 12052 can also control the display unit 12062 to display icons representing pedestrians at desired locations.

[0271] The above description addresses an example of a vehicle control system to which the technology disclosed herein can be applied. The technology disclosed herein can be applied to the camera unit 12031 and the like in the configuration described above. Because applying the technology disclosed herein to the camera unit 12031 allows for the acquisition of more sensitive camera images, it enables, for example, the more accurate identification of obstacles or pedestrians in the camera images. Furthermore, because applying the technology disclosed herein to the camera unit 12031 allows for the display of, for example, more sensitive photographic images, it enables the driver to observe the surroundings with greater sensitivity.

[0272] The preferred embodiments of the present invention have been described in detail above with reference to the accompanying drawings, but the technical scope of this disclosure is not limited to the examples described above. Various variations or modifications that would be readily apparent to a person skilled in the art of this disclosure within the scope of the technical ideas described in the claims should also fall within the technical scope of this disclosure.

[0273] Furthermore, the effects described in this specification are ultimately illustrative or exemplary, and not limiting. That is, in addition to the effects described above, the technology disclosed herein can also produce other effects that are readily apparent to those skilled in the art based on the description in this specification, thus replacing the aforementioned effects.

[0274] Furthermore, the following components also fall within the technical scope of this disclosure. (1) A camera device comprising: A plurality of pixels, each containing a photoelectric conversion unit, are arranged in a matrix-like planar configuration; A color filter is disposed on the aforementioned photoelectric conversion unit for each of the aforementioned pixels; and A wall-like structure is provided between adjacent color filters, with the first wall defining its shape, thereby separating the aforementioned color filters from each other. (2) As in the camera device described in (1) above, the aforementioned first wall portion defines the aforementioned wall-shaped structure portion’s shape by the side and upper surface of the space surrounding the aforementioned color filter. (3) As in the camera device described in (2) above, the film thickness of the first wall portion on the aforementioned upper surface is thicker than the film thickness of the first wall portion on the aforementioned side surface. (4) As in the camera device described in (2) or (3) above, the space surrounded by the first wall portion is a gap. (5) The camera device described in (4) above has at least one opening on the first wall portion of the aforementioned upper surface. (6) As in the imaging device described in (5) above, the aforementioned wall-like structure is arranged in a grid pattern between the aforementioned pixels; and The aforementioned opening is located at one or all of the intersection points of the grids in the aforementioned wall-like structural section. (7) As in the camera device described in (6) above, the aforementioned opening is blocked by a closure membrane disposed on the aforementioned wall-like structure. (8) The camera device as described in (7) above, wherein the aforementioned wall-shaped structure further includes a second wall portion disposed inside the aforementioned first wall portion. (9) As in the camera device described in (8) above, the second wall portion is made of the same insulating material as the aforementioned occlusion membrane. (10) The imaging device of any one of (7) to (9) above, wherein a crystal lens is further provided on the aforementioned occlusion film for each of the aforementioned pixels. (11) As in the imaging device described in (10) above, the refractive index of the aforementioned occlusion film is approximately the same as or less than the refractive index of the aforementioned crystal lens. (12) The camera device of any one of (4) to (11) above, wherein a light-shielding part is further provided below the aforementioned gap. (13) As in the camera device described in (12) above, the width of the aforementioned light-shielding part is shorter than the width of the aforementioned lower part of the aforementioned gap. (14) The camera device of any one of (1) to (13) above, wherein the aforementioned color filter is configured to be the same color for every 2×2, 3×3, or 4×4 adjacent aforementioned pixels. (15) As described in the aforementioned (4) camera device, the aforementioned first wall portion is composed of Si, SiO2, SiN, SiC, SiCO, SiON, SiCN, SiH, SiOH, SiNH, SiCH, SiCOH, SiONH, or SiCNH. (16) As described in (15) above, the camera device does not have an opening in the first wall portion. (17) The camera device described in (15) above, wherein a protective film made of insulating material is further provided on the first wall portion. (18) As described in the aforementioned (17) camera device, the aforementioned protective film is provided along the shape of the aforementioned first wall portion. (19) As described in the camera device (1) above, the first wall portion defines the aforementioned shape of the wall-shaped structure portion by opening the upper surface of the space between the aforementioned color filters and surrounding the side surface of the space between the aforementioned color filters. (20) As described in the aforementioned (19) camera device, the aforementioned upper surface, which has been opened, is blocked by a closure membrane disposed on the aforementioned wall-like structure. (twenty one) As described in the aforementioned (20) camera device, the aforementioned wall-shaped structure further includes a second wall portion, which is made of the same insulating material as the aforementioned occlusive membrane and is disposed inside the aforementioned first wall portion. (twenty two) The camera device described in any of (19) to (21) above, wherein the height of the first wall portion is greater than the height of the color filter. (twenty three) The camera device as described in any of (19) to (21) above, wherein the height of the first wall portion is lower than the height of the color filter. (twenty four) The camera device as described in any of (19) to (23) above, wherein the first wall portion is made of the same insulating material as the planarization film disposed under the aforementioned color filter. (25) The camera device as described in any of (19) to (23) above, wherein the first wall portion is made of an insulating material different from the planarization film disposed under the aforementioned color filter. (26) As described in (1) above, the first wall portion is a sealing membrane that blocks the space between the aforementioned color filters. (27) As described in the aforementioned (26) camera device, a gap surrounded by the aforementioned first wall portion is provided in the space between the aforementioned color filters. (28) As in the aforementioned (26) or (27) imaging device, a blocking layer is provided under the aforementioned color filter, the blocking layer being made of an insulating material with an etching rate different from that of the aforementioned color filter. (29) The camera device of any one of (4) to (13) above, wherein the lower end of the aforementioned color filter is located below the lower end of the aforementioned gap. (30) The camera device of any one of (4) to (13) above, wherein the width of the central part in the vertical direction of the aforementioned gap is greater than the width of the upper and lower parts of the aforementioned gap. (31) The camera device as described in any of (4) to (13) above, wherein a support or partition wall is provided inside the aforementioned gap. (32) An electronic machine comprising a camera device, and The aforementioned camera device includes: A plurality of pixels, each containing a photoelectric conversion unit, are arranged in a matrix-like planar configuration; A color filter is disposed on the aforementioned photoelectric conversion unit for each of the aforementioned pixels; and A wall-like structure is provided between adjacent color filters, with the first wall defining its shape, thereby separating the aforementioned color filters from each other.

[0275] 1: Camera device 12 pixels 12B: Blue pixel 12G: Green Pixels 12R: Red pixel 13: Pixel section 14: Vertical drive circuit 15: Horizontal signal processing circuit 16: Horizontal drive circuit 17: Output Circuit 18: Control Circuit 19: Vertical signal line 20: Horizontal signal line 100: Semiconductor layer 110: Photoelectric Conversion Unit 111: Pixel Separation Layer 112: Stapling layer 113: Anti-reflective layer 120: Color Filter 121: Planarization film 122: Barrier Layer 123: Opening 125, 125A, 125B: Partition walls 126: Pillar 130: Wall-like structural part 131, 136, 139, 1312: First wall section 131A: SiO₂ x film 131B: SiN film 131C:TiN film 132: Second wall section 133, 133A, 133B: Gaps 134: Temporary wall section 134A: First Temporary Wall Section 134B: Second Temporary Wall Section 135:Light shielding part 137: Opening 138: Wall protective film 140: Occlusive membrane 141: Overlay 150: Crystal-borne lens 151: Filter protective membrane 161: Resistant layer 162: Lower anti-reflective film 163: Mask 1000: Electronic Machines 1001: Optical Lens 1002: Shutter mechanism 1011: DSP Circuit 1012: Display Section 1013: Operations Department 1014: Frame Memory 1015: Memory Department 1016: Power Supply Department 12000: Vehicle Control System 12001: Communication Network 12010: Drive system control unit 12020: Vehicle Body System Control Unit 12030: Exterior Information Detection Unit 12031, 12101, 12102, 12103, 12104, 12105: Camera Department 12040: In-vehicle information detection unit 12041: Driver Status Monitoring Department 12050: Integrated Control Unit 12051: Microcomputer 12052: Audio and Image Output Unit 12053: In-vehicle network I / F 12061: Audio Speaker 12062: Display Unit 12063: Dashboard 12100: Vehicles 12111, 12112, 12113, 12114: Camera range A-AA, B-BB: Cut surface

Claims

1. A detection device comprising: a plurality of pixels, each including a photoelectric conversion unit and arranged in a matrix-like planar configuration; a plurality of color filters disposed on the aforementioned photoelectric conversion units, including adjacent first color filters and second color filters; a wall-like structure disposed between the aforementioned first color filters and the aforementioned second color filters, defined by a first film, separating the aforementioned first color filters and the aforementioned second color filters from each other; and a gap disposed between the aforementioned first color filters and the aforementioned second color filters; wherein the aforementioned wall-like structure surrounds the side surface and upper surface of the aforementioned gap with the aforementioned first film, and at least one opening is provided on the aforementioned upper surface of the aforementioned first film.

2. The detection device of claim 1, wherein the thickness of the first film on the aforementioned upper surface is greater than the thickness of the first film on the aforementioned side surface.

3. The detection device of claim 1, wherein the aforementioned wall-like structure is arranged in a grid pattern between the aforementioned pixels; and the aforementioned opening is provided at one or all of the intersection points of the grid of the aforementioned wall-like structure.

4. The detection device of claim 3, wherein the aforementioned opening is closed by a closure membrane disposed on the aforementioned wall-like structure.

5. The detection device of claim 4, wherein the aforementioned wall-like structure further includes a second membrane disposed inside the aforementioned first membrane.

6. The detection device as claimed in claim 5, wherein the aforementioned second membrane is made of the same insulating material as the aforementioned occlusion membrane.

7. The detection device of claim 4, wherein a crystal lens is further disposed on the aforementioned occlusion film for each of the aforementioned pixels.

8. The detection device of claim 7, wherein the refractive index of the aforementioned occlusion film is approximately the same as or less than the refractive index of the aforementioned crystal lens.

9. The detection device of claim 1, wherein a light-shielding part is further provided below the aforementioned gap.

10. The detection device of claim 9, wherein the width of the aforementioned light-shielding portion is shorter than the width of the aforementioned lower portion of the aforementioned gap.

11. The detection apparatus of claim 1, wherein the plurality of color filters are configured to be the same color for every 2×2, 3×3, or 4×4 adjacent pixels.

12. The detection apparatus of claim 1, wherein the aforementioned first membrane system is composed of Si, SiO2, SiN, SiC, SiCO, SiON, SiCN, SiH, SiOH, SiNH, SiCH, SiCOH, SiONH, or SiCNH.

13. The detection device of claim 12, wherein a protective film made of insulating material is further provided on the aforementioned first film.

14. The detection device of claim 13, wherein the aforementioned protective film is disposed along the shape of the aforementioned first film.

15. The detection device of claim 1, wherein the aforementioned open upper surface is blocked by a blocking membrane disposed on the aforementioned wall-like structure.

16. The detection device of claim 15, wherein the aforementioned wall-like structure further includes a second membrane, the second membrane being made of the same insulating material as the aforementioned occlusion membrane and disposed inside the aforementioned first membrane.

17. The detection apparatus of claim 1, wherein the height of the first membrane is higher than the height of the plurality of color filters.

18. The detection apparatus of claim 1, wherein the height of the first membrane is lower than the height of the plurality of color filters.

19. The detection apparatus of claim 1, wherein the first membrane is made of the same insulating material as the planarization membrane disposed under the plurality of color filters.

20. The detection apparatus of claim 1, wherein the first membrane is made of an insulating material different from the planarization membrane disposed under the plurality of color filters.

21. The detection apparatus of claim 1, wherein the first membrane is a sealing membrane that seals the space between the plurality of color filters.

22. The detection apparatus of claim 21, wherein a gap surrounded by the first membrane is provided in the space between the aforementioned plurality of color filters.

23. The detection apparatus of claim 21, wherein a barrier layer is provided under the aforementioned plurality of color filters, the barrier layer being made of an insulating material having an etching rate different from that of the aforementioned plurality of color filters.

24. The detection device of claim 1, wherein the lower ends of the aforementioned plurality of color filters are located further below the lower end of the aforementioned gap.

25. The detection device of claim 1, wherein the width of the central portion of the aforementioned gap in the vertical direction is greater than the width of the upper and lower portions of the aforementioned gap.

26. The detection device of claim 1, wherein a support or partition wall is provided inside the aforementioned gap.

27. An electronic machine comprising a detection device as claimed in any one of claims 1 to 26.

Images