Reaction chamber, reactor system, and method for adjusting sealing system within reaction chamber

Abstract

A reaction chamber may include a reaction chamber volume enclosed within the reaction chamber; a base configured to support a substrate disposed within the reaction chamber volume; a reaction space above the base and a lower chamber space below the base within the reaction chamber volume; and / or a sealing system that causes at least partial fluid separation between the reaction space and the lower chamber space. A sealing system may include a spacer surrounding and coupled to the base; and / or a spring coupled to the spacer and the base, the spring having a spring bias toward either a compressed position or an extended position, such that the spring bias facilitates the establishment of at least a partial seal between the spacer and the base, causing at least partial fluid separation between the reaction space and the lower chamber space as the base moves vertically within the reaction chamber.

Description

[Technical Field]

[0001] This disclosure generally relates to semiconductor processing or reactor systems, and specifically to reactor systems and components contained therein, which allow for sealing between the upper and lower volumes within a reaction chamber. [Previous Technology]

[0002] The reaction chamber can be used in various processes during the formation of electronic devices. For example, the reaction chamber can be used to deposit various material layers onto a semiconductor substrate, etch materials, and / or clean surfaces. The substrate can be placed on a pedestal within the reaction chamber. Both the substrate and the pedestal can be heated to a desired substrate temperature setpoint. In one example process, one or more reactant gases can be passed over the heated substrate, causing a thin film of material to be deposited on the substrate surface.

[0003] The reaction chamber may comprise, for example, two spaces or volumes separated by a base. Treatment may occur in one of the two chambers, either in the reaction space or chamber (e.g., an upper chamber positioned vertically above a lower chamber). During operation of a reactor system comprising two chambers separated by a base, contaminants may undesirably transfer from the reaction space to the other chamber (e.g., from the upper chamber to the lower chamber). Therefore, systems and methods for providing a seal between the two volumes within the reaction chamber (e.g., for at least partial fluid separation of the two chambers) are desirable.

[0004] Any discussion of problems and solutions involved in related technologies is included in this disclosure only to provide background information and should not be construed as an admission that any or all of the discussions were known at the time the invention was made. [Summary of the Invention]

[0005] This invention is provided to introduce a series of concepts in a simplified form. These concepts will be described in further detail below in the embodiments of the examples disclosed herein. This invention is not intended to identify key or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter.

[0006] In some embodiments, a reactor system is provided. The reactor system disclosed herein can facilitate at least partial sealing between two chambers or volumes within one reactor system's reaction chamber.

[0007] In various embodiments, a reactor system may include a reaction chamber and / or a vacuum source in fluid communication with a reaction chamber (or a lower chamber space therein). A reaction chamber may include a reaction chamber volume enclosed within the reaction chamber; a base configured to support a substrate disposed within the reaction chamber volume, the base configured to translate vertically along an axis within the reaction chamber; a reaction space above the base within the reaction chamber volume; a lower chamber space below the base within the reaction chamber volume; and / or a sealing system that causes at least partial fluid separation between the reaction space and the lower chamber space. In various embodiments, a sealing system may include a spacer surrounding the base, wherein the base is coupled to the spacer; and / or a spring coupled to the spacer and the base, the spring having a spring bias toward either a compressed position or an extended position, such that the spring bias facilitates the establishment of at least a partial seal between the spacer and the base, causing at least partial fluid separation between the reaction space and the lower chamber space as the base moves vertically within the reaction chamber.

[0008] In various embodiments, the sealing system may further include a flow control ring disposed around a base and between the base and a spacer. A spring may be disposed between the flow control ring and the spacer, such that the spring is coupled to the base via the flow control ring. At least a partial seal between the spacer and the base may be facilitated by spring biasing between the flow control ring and the spacer. In various embodiments, the spring may be disposed between an upper surface of the flow control ring and a lower surface of the spacer. In various embodiments, the spring may be biased toward an extended position such that a downward force from the spring is applied to the flow control ring, which, in turn, creates a downward force on the base, thereby forming at least a partial seal between the flow control ring and the base, and at least a partial fluid separation between the reaction space and the lower chamber space. In various embodiments, the spring may form at least a partial seal between the spring and the spacer and between the spring and the flow control ring. In various embodiments, the spring may be fixedly coupled to at least one of the spacer or the flow control ring.

[0009] In various embodiments, the spring may surround the base. The spring may include a cross-sectional shape having at least one warp. In various embodiments, the cross-sectional shape of the spring may include a shape having one of three warps. In various embodiments, the spring may surround the base at a first point, wherein the reaction chamber further includes a second spring disposed at a second point surrounding the base, such that a force on the base derived from the spring occurs at multiple points.

[0010] In various embodiments, a reaction chamber may further include a gas distribution device disposed above a base in the reaction space, wherein a spring allows the adjustment of a distance between the base and the gas distribution device to be adjustable up to nine millimeters, while still maintaining at least partial fluid separation between the reaction space and the lower chamber space.

[0011] In various embodiments, the spring may comprise at least one of a metal or metal alloy (e.g., stainless steel and / or a nickel alloy).

[0012] In various embodiments, a method may include translating a base in a reaction chamber upward from a first position to a second position; applying a force to a spring coupled between the base and a spacer in response to the base movement, wherein the spring has a spring bias toward a compressed position or an extended position; and / or maintaining at least a partial seal between the spacer and the base in response to the applied force on the spring during the base movement, such that at least a partial fluid separation occurs between a reaction space above the base and a lower chamber space below the base in the reaction chamber. In various embodiments, the method may further include creating a downward force on the base via the spring bias, which facilitates at least a partial fluid separation between the reaction space and the lower chamber space. In various embodiments, the force applied to the spring may include a compressive force, and wherein the spring bias may be toward an extended position. In various embodiments, the reaction chamber may further include a flow control ring disposed between the base and the spacer, wherein the spring is disposed between the flow control ring and the spacer such that the spring is coupled to the base via the flow control ring.

[0013] In various embodiments, the method may further include, in response to the movable base, moving one upper surface of the flow control ring closer to one lower surface of the spacer, wherein the force applied to the spring is a compressive force between the upper surface of the flow control ring and the lower surface of the spacer. In various embodiments, the method may further include, during the movement of the base, maintaining at least a partial seal between the spring and the spacer, and between the spring and the flow control ring.

[0014] For the purpose of summarizing this disclosure and the advantages achieved over the prior art, certain objectives and advantages of this disclosure have been described above herein. It should be understood, of course, that all such objectives or advantages may not be achieved based on any specific embodiment of this disclosure. Therefore, those skilled in the art will recognize, for example, that the embodiments disclosed herein may be practiced in a manner that achieves or optimizes one advantage or set of advantages as taught or suggested herein, without necessarily achieving other objectives or advantages that may be taught or suggested herein.

[0015] All of these embodiments are intended to fall within the scope of this disclosure. Those skilled in the art will readily understand these and other embodiments from the following detailed description of some embodiments with reference to the accompanying drawings. This disclosure is not limited to any of the specific embodiments discussed.

Implementation Method

[0017] While certain embodiments and examples are disclosed below, those skilled in the art will understand that this disclosure extends beyond the specific embodiments and / or uses disclosed herein, as well as obvious modifications and equivalents thereof. Therefore, it is intended that the scope of this disclosure should not be limited to the specific embodiments described herein.

[0018] The illustrations presented herein are not intended to be actual views of any particular material, device, structure or apparatus, but are merely representations used to describe embodiments of this disclosure.

[0019] As used herein, the term “substrate” can refer to any underlying material(s) that can be used to form or on which a device, circuit or membrane can be formed.

[0020] As used herein, the term "atomic layer deposition" (ALD) can refer to a vapor deposition process in which deposition cycles (preferably multiple successive deposition cycles) are performed in a process chamber. Typically, during each cycle, a precursor is chemisorbed onto a deposition surface (e.g., a substrate surface or an underlying surface previously deposited, such as material from a previous ALD cycle), forming a monolayer or sub-monolayer that is not readily reacting with additional precursors (i.e., a self-limiting reaction). Subsequently, if necessary, a reactant (e.g., another precursor or reactive gas) can be subsequently introduced into the process chamber to convert the chemisorbed precursor into the desired material on the deposition surface. Typically, this reactant can further react with the precursor. Furthermore, a rinsing step can be used during each cycle to remove excess precursor from the process chamber and / or to remove excess reactant and / or reaction byproducts from the process chamber after the conversion of the chemisorbed precursor. Furthermore, when using alternating pulses of precursor components, reactive gases, and purging (e.g., inert support) gases, the term "atomic layer deposition" as used herein is also intended to include processes specified by related terms such as "chemical vapor atomic layer deposition," "atomic layer epitaxy (ALE)," "molecular beam epitaxy (MBE)," "gas source MBE," or "organometallic MBE," and "chemical beam epitaxy."

[0021] As used herein, the term "chemical vapor deposition" (CVD) may refer to any process in which a substrate is exposed to one or more volatile precursors that react and / or decompose on the substrate surface to produce the desired deposition.

[0022] As used herein, the terms "film" and "thin film" can refer to any continuous or discontinuous structure and material deposited by the methods disclosed herein. For example, "film" and "thin film" can include 2D materials, nanorods, nanotubes, or nanoparticles, or even partial or complete molecular layers, or partial or complete atomic layers, or atomic and / or molecular clusters. "Film" and "thin film" can contain materials or layers with pinholes, but are still at least partially continuous.

[0023] As used herein, the term "contaminant" may refer to any unwanted material disposed within the reaction chamber that may affect the purity of the substrate disposed within the reaction chamber. The term "contaminant" may refer to (but is not limited to) unwanted deposits, metallic and non-metallic particles, impurities, and waste products disposed within the reactor system or reaction chamber (or any part thereof).

[0024] Reactors for ALD, CVD, and / or the like can be used in a variety of applications, including depositing and etching materials on substrate surfaces. In various embodiments, referring to FIG1, reactor system 50 may include: a reaction chamber 4; a base 6 for holding substrate 30 during processing; a fluid distribution system 8 (e.g., a spray head) for distributing one or more reactants to the surface of substrate 30; one or more reactant sources 10, 12; and / or carrier and / or purging gas source 14, which are fluidly coupled to reaction chamber 4 via lines 16 to 20 and / or valves or controllers 22 to 26. System 50 may also include a vacuum source 28, which is fluidly coupled to reaction chamber 4. Sealing member 29 can separate multiple portions of the volume of reaction chamber 4 (e.g., at least partially fluidly separated).

[0025] Turning to Figures 2A and 2B, embodiments of this disclosure may include reactor systems and methods that can be used to process substrates within reactor 100. In various embodiments, reactor 100 may include a reaction chamber 110 for processing substrates. In various embodiments, reaction chamber 110 may include a reaction space 112 (i.e., upper chamber) configurable for processing one or more substrates, and / or a lower chamber space 114 (i.e., lower chamber). Lower chamber space 114 may be configured for loading and unloading substrates from and / or for providing a pressure differential between lower chamber space 114 and reaction space 112.

[0026] In various embodiments, the substrate 150 and the base 130 may be movable relative to each other. For example, in various embodiments, the lifting pin 139 may be configured to allow the substrate 150 to separate from the base 130 and to allow the substrate 150 to be positioned in contact with the base 130 (i.e., supported by the base). In various embodiments, the base 130 may be moved up and down, for example, via a base lift 104, such that the base 130 moves relative to the substrate 150. In various embodiments, the lifting pin 139 may be moved up and down, for example, via a lifting pin lift / platform 202, such that the substrate 150 moves relative to the base 130. In various embodiments, the base 130 and / or the lifting pin 139 may be stationary while the other moves. In various embodiments, the base 130 and / or the lifting pin 139 may be configured to move relative to the other.

[0027] In various embodiments, the base 130 can be moved from the loading position 103 to the processing position 106, thus moving the substrate 150 into the reaction space 112. The substrate 150 can then be processed within the reaction chamber.

[0028] In various embodiments, the reaction space 112 and the lower chamber space 114 can be separated by a base 130 disposed in the reaction chamber 110. In various embodiments, the reaction space 112 and the lower chamber space 114 can be substantially fluidly separated or isolated from each other. For example, the base 130 can fluidly separate the reaction space 112 and the lower chamber space 114 by establishing at least a partial seal (i.e., at least restricting fluid flow) between the base 130 and the chamber sidewall 111 of the reaction chamber 110 disposed on the outer surface 132 of the base adjacent to the base 130. That is, the space 108 between the base 130 and the chamber sidewall 111 can be minimized or eliminated, such that there is little or no fluid movement between the base 130 and the chamber sidewall 111.

[0029] In various embodiments, to prevent or reduce fluid flow between the base 130 and the chamber sidewall 111, one or more sealing members (e.g., sealing member 129) may be coupled to the base 130 (e.g., from the outer surface 132 of the base) and / or the chamber sidewall 111 of the reaction chamber 110 to the other, establishing at least a partial seal between the base 130 and the chamber sidewall 111 (i.e., restraining or preventing fluid flow). Sealing member 129 may be a diaphragm. At least a partial seal between the reaction space 112 and the lower chamber space 114 may be configured to prevent or reduce the entry and / or contact of precursor gases and / or other fluids used to process the substrate 150 into and / or with the lower chamber space 114 of the reaction chamber 110. For example, the precursor gas used to treat the substrate in the reaction space may contain corrosive deposition precursors, which may come into contact with the lower chamber space 114 and generate unwanted deposits / contaminants / particles, which may then be reintroduced into the reaction space 112, thereby providing a source of contamination to the substrate disposed in the reaction space.

[0030] In various embodiments, in order to establish a seal between the reaction space and the lower chamber space, the reaction chamber may include a sealing system disposed between the base and the chamber sidewall. For example, the sealing system in the reaction chamber 130 may include a sealing member 129 disposed between the base 130 and the chamber sidewall 111 to establish at least a partial seal between the reaction space 112 and the lower chamber space 114.

[0031] In various embodiments, the sealing system within the reaction chamber may include a spacer, at least a portion of which may project from a sidewall into the reaction chamber volume. In various embodiments, the spacer may surround a base within the reaction chamber. The spacer may be coupled to the base (e.g., when the reaction chamber is moved to a processing position or positioned in a processing position (e.g., an elevated position)). In various embodiments, the spacer may contact and / or be directly coupled to the base (e.g., when the base is in the elevated or processing position). For example, a lower surface of the spacer (e.g., surface 374 in FIG. 3) may be coupled to and / or contact an upper surface of the base (e.g., upper surface 336 in FIG. 3). In various embodiments, the upper surface of the base to which the spacer may engage may be a substrate support surface.

[0032] In various embodiments, the sealing system in the reaction chamber may include a spring disposed between the spacer and the base. In various embodiments, the spring may be disposed between the lower surface of the spacer and the upper surface of the base. For example, the spring may be at least partially disposed between the lower surface of the spacer and engage with the upper surface of the base. In various embodiments, the spring may be disposed between the lower surface of the spacer and the upper surface of a recess in the base, with at least a portion of the spring disposed in the recess. In various embodiments, the spring may be disposed between the lower surface of the recess in the spacer and the upper surface of the base, with at least a portion of the spring disposed in the recess. In various embodiments, the spring may be disposed between the lower surface of the recess in the spacer and the upper surface of the recess in the base.

[0033] In various embodiments, the sealing system may include a flow control ring disposed between the base and the spacer. The flow control ring may be disposed around the base and may be configured to control fluid flow within the reaction chamber. For example, the sealing member 129 in FIG1 may be a flow control ring. Thus, the base may be coupled to and / or engaged with the spacer via the flow control ring. The reaction space and the lower chamber space may be separated (fluidly and / or physically) by means of the base, the flow control ring, and / or the spacer. For example, as shown in FIG3, the flow control ring 390 may be disposed between the spacer 370 and the base 330. The flow control ring 390 may include an upper surface 394 that engages (i.e., is coupled to and / or contacts) the lower surface 374 of the spacer 370. The flow control ring 390 may include a lower surface 392 that engages (i.e., is coupled to and / or contacts) the upper surface 336 of the base 330. In various embodiments, the upper surface of the base engaging with the flow control ring may be a substrate support surface. Similarly, as shown in Figures 4A and 4B, the flow control ring 490 may be disposed between the spacer 470 and the base 430. The flow control ring 490 may include an upper surface 494 that engages (i.e., couples to and / or contacts) the lower surface 474 of the spacer 470. The flow control ring 490 may include a lower surface 492 that engages (i.e., couples to and / or contacts) the upper surface 436 of the base 430. In various embodiments, at least a portion of the flow control ring may be disposed above the spacer, preventing the flow control ring from translating below the spacer.

[0034] In various embodiments, a spring may be disposed between a spacer and a flow control ring in a sealing system for a reaction chamber. In various embodiments, the spring may be disposed between the lower surface of the spacer and the upper surface of the flow control ring. For example, referring to Figures 4A and 4B, a spring 440 may be at least partially disposed between the lower surface 474 of the spacer 470 and the upper surface 494 of the flow control ring 490. In various embodiments, referring to Figure 3, a spring may be disposed between the lower surface 374 of the spacer 370 and the upper surface 397 of the recess 395 in the flow control ring 390, with at least a portion of the spring 340 disposed in the recess. In various embodiments, a spring may be disposed between the lower surface of the recess in the spacer and the upper surface of the flow control ring, with at least a portion of the spring disposed in the recess. In various embodiments, a spring may be disposed between the lower surface of the recess in the spacer and the upper surface of the recess in the flow control ring.

[0035] In various embodiments, the sealing system of the reaction chamber includes a spring that allows a seal to be formed, sealing the reaction space within the reaction chamber volume and the lower chamber space across a range of the height of the reaction space. That is, the base can be in a processing position (or elevated position) at a distance from the top of the reaction chamber volume (e.g., a fluid distribution system) while still establishing a seal with other components of the reaction chamber sealing system (e.g., spacers and / or flow control rings).

[0036] In operation, referring to method 700 shown in FIG7, the base may be translated from a first position (e.g., a lower position or a loading position) to a second position (e.g., an elevated position or a processing position) (step 702). In the lower position, the base may not be in contact with any other component of the sealing system of the reaction chamber (e.g., a spacer and / or a flow control ring). Accordingly, the lower chamber space and the reaction space within the reaction chamber volume may be in fluid communication. The spring in the sealing system may be in a relaxed position (e.g., for a spring biased toward an uncompressed or extended position, this spring may be in an uncompressed or less compressed position). The base may be translated along the x-axis depicted in FIG3 and FIG4A to FIG4B toward the elevated position (e.g., the processing position). The processing position of the base may be the position in which the base is positioned during the processing of the substrate (e.g., at a desired distance from the top of the reaction chamber or the fluid distribution system). During translation, the upper surface of the base may engage and / or couple to the lower surface of the sealing system, such as the lower surface of the spacer and / or flow control ring.

[0037] In response to the engagement of the base with the spacer and / or flow control ring, a force may be applied to a spring in the sealing system (step 704), which may move against its bias (e.g., compression). Thus, the spring may apply force to the assembly in which it is disposed. For example, the spring may apply an upward force on the spacer and a downward force on the flow control ring and / or the base. The downward force on the flow control ring from the compressed spring (against its bias) may press the flow control ring into the base. Thus, at least a partial seal may be formed between the spacer and the base via the flow control ring (step 706) (i.e., at least a partial seal may be formed directly between the flow control ring and the base). This at least partial seal may be maintained in response to the base reaching and being positioned in the processing position, and maintained throughout the substrate processing. In various embodiments, at least a partial seal may be maintained between the spring and the spring-coupled assembly (step 708) (e.g., at least a partial seal may be maintained between the spring and the spacer, and / or between the spring and the flow control ring). Accordingly, in the reaction chamber volume, the lower chamber space can be at least partially fluidly isolated from the lower chamber space.

[0038] Referring to Figure 3, during operation, the base 330 can be translated along the x-axis from a lower position to a raised position. The base 330 may not be in contact with the flow control ring 390 in the lower position. When the base 330 contacts and / or engages with the flow control ring 390, the spring 340 can be compressed from a relaxed position to a compressed position. The spring 340 may be biased toward an uncompressed or less compressed position. The partition 395 and / or its portion protruding from the chamber sidewall 311 may be substantially static (i.e., the partition 390 and its portion do not move in response to the force of the spring 340). In response to the compression of the spring 340, the spring 340 may apply an upward force on the lower surface 374 of the partition 370 and / or a downward force on the upper surface 397 of the flow control ring 390. In response, the flow control ring 390 may apply a downward force on the upper surface 336 of the base 330. The upper surface 336 may be contained within a base protrusion 334 projecting from the outer surface 332 of the base. In various embodiments, the upper surface of the base receiving downward force from the spring and / or flow control ring may be contained on the substrate support surface of the base. The downward force of the flow control ring 390 on the base 330 may cause at least a partial seal to be formed between the flow control ring 390 and the base 330. Therefore, the reaction space 312 and the lower chamber space 314 may be at least partially fluidly separated.

[0039] Referring to Figures 4A and 4B, during operation, the base 430 can be translated along the x-axis from a lower position to a raised position. In the lower position, the base 430 may not be in contact with the flow control ring 490. When the base 430 contacts and / or engages with the flow control ring 490, the spring 440 can be compressed from a relaxed position 440A to a compressed position 440B. The spring 440 can be biased toward an uncompressed or less compressed position. The spacer 490 and / or its portion protruding from the chamber sidewall 411 can be substantially static (i.e., the spacer 490 and its portion do not move in response to the force of the spring 440). In response to the compression of the spring 440, the spring 440 can apply an upward force on the lower surface 474 of the spacer 470 and / or a downward force on the upper surface 494 of the flow control ring 490. In response, the flow control ring 490 may apply a downward force to the upper surface 436 of the base 430. In various embodiments, the upper surface of the base may be contained within a substrate support surface of the base. The downward force of the flow control ring 490 on the base 430 may cause at least a partial seal to be formed between the flow control ring 490 and the base 430. Therefore, the reaction space 412 and the lower chamber space 414 may be at least partially fluid-separated.

[0040] In various embodiments, the spring may form at least a partial seal between components coupled to the spring. For example, referring to FIG3, the spring 340 may form at least a partial seal between the spacer 370 and the flow control ring 390. This at least partial seal may be formed by biasing the spring 340 toward an uncompressed or less compressed position, such that an upward force of the spring 340 on the spacer 370 and a downward force of the spring 340 on the flow control ring 390 establish at least a partial seal between the spring 340 and the spacer 370 and / or the flow control ring 390. As another example, referring to FIGS. 4A and 4B, the spring 440 may form at least a partial seal between the spacer 470 and the flow control ring 490. This at least partial seal can be formed by the bias of the spring 440 toward the uncompressed or less compressed position 440A, such that the upward force of the spring 440 on the spacer 470 and the downward force of the spring 440 on the flow control ring 490 establish at least a partial seal between the spring 440 and the spacer 470 and / or the flow control ring 490.

[0041] In various embodiments, the springs of the sealing system in the reaction chamber may be coupled (e.g., fixedly coupled via welding, adhesive, or the like) to the components in which the springs are disposed. For example, the springs of the sealing system in the reaction chamber disposed between the spacer and the base may be coupled to the spacer and / or the base. As another example, the springs of the sealing system in the reaction chamber disposed between the spacer and the flow control ring may be coupled to the spacer and / or the flow control ring.

[0042] At least a partial seal between the base and the spacer and / or flow control ring in the reaction chamber can be achieved across a range of base positions (i.e., across a distance range between the base and the top of the reaction chamber or the fluid distribution system). The spring allows engagement between the base and the spacer and / or flow control ring at a position below the uppermost position of the base (i.e., at a base position where the reaction space is the shortest distance between the base and the top of the reaction chamber or the fluid distribution system). Therefore, at any position where the base and the spacer and / or flow control ring are engaged, the downward force exerted by the spring on the base across the compression range of the spring creates at least a partial seal between the spacer and / or flow control ring and the base.

[0043] In various embodiments, the spring may have a shape that surrounds the base in the reaction chamber. For example, the spring 340 in FIG3 may extend completely around the base 330. In various embodiments, the spring may be positioned at one or more points around the base such that forces on the base that establish a seal in the reaction chamber can occur at multiple points around the base.

[0044] In various embodiments, the spring may include a cross-sectional shape that includes at least one warp. For example, the spring 340 in FIG3 may include an E-shaped cross-sectional shape having three warps 344 between a first end 342 and a second end 346. The spring may include any suitable number of warps, depending on the desired height of the spring and the desired flexibility of the reaction chamber assembly. For example, the spring 600 may include more than three warps 644.

[0045] In springless embodiments, the components of the reaction chamber must be manufactured and fitted together with precision, leaving little or no room for any variation in the shape or position of the components (e.g., surfaces must be angled in some way). This increases manufacturing time and cost, as well as the potential for errors (e.g., components not fitting together correctly, failure to establish a seal between the reaction space and the lower chamber space, causing contaminants to flow into the lower chamber space, etc.). Additionally, the height of the reaction space (e.g., the distance from the upper base surface (i.e., the substrate support surface) to the fluid distribution system) can be fixed, so that such distance cannot be adjusted without sacrificing the tightness between components and the seal they provide. On the other hand, the presence of springs in the reaction chamber sealing system allows for less precision in component design, manufacturing, and / or positioning to engage components with each other and establish a seal between them, so that the reaction space and the lower chamber space are at least partially fluid-separated. For example, the base can be slightly tilted, and the base can still be fully engaged with the spacer and / or flow control ring. Furthermore, the height of the reaction space (i.e., the distance between the base and the fluid distribution system) is adjustable while maintaining a seal between the reaction space and the lower chamber. Therefore, the height of the reaction space can be adjusted depending on the ongoing process and the desired space between the substrate and the fluid distribution system.

[0046] In various embodiments, for springs incorporating an E-shape (as shown in FIG3), the reaction space height can have an adjustability of up to about 1 mm (i.e., the reaction space height can vary by up to one millimeter depending on the process performed). In various embodiments, for springs incorporating coil springs (e.g., spring 440 in FIG4A and FIG4B) or for springs with greater deflection potential or distance, the reaction space height can have an adjustability of up to about 9 mm (e.g., the reaction space height range can be from 6 to 15 mm).

[0047] In various embodiments, the springs in the sealing system within the reaction chamber can comprise any suitable material, such as metals or metal alloys (e.g., stainless steel or nickel alloys). Previously used sealing components in sealing systems (such as O-rings comprising polymeric materials) may bond, deform, or deteriorate at relatively low temperatures (e.g., above 300°C). Another previously used sealing component, a diaphragm, may have higher manufacturing defects, deform at higher temperatures, and other problems leading to insufficient sealing between the lower and upper chambers within the reaction chamber volume. Springs comprising metallic materials can have lower manufacturing defects, less particle generation during processing, higher rebound and yield strength (adjustable by adjusting the number of spring warps or turns), minimal deflection required to achieve at least a partial seal between components (allowing for flexibility and adjustability within the reaction chamber and reaction space height), higher temperature performance (e.g., above 800°C in some cases), and the ability to easily create spring rings with different cross-sectional shapes based on the deflection requirements of a specific deposition process.

[0048] In various embodiments, the reactor or reaction chamber may include a flushing passage in fluid communication with the reaction chamber volume, the flushing passage having an outlet adjacent to the spring. For example, referring to Figures 4A and 4B, the reaction chamber may include a flushing passage 420 in fluid communication with the reaction chamber volume (e.g., with the reaction space 412). The flushing passage 420 may be fluidly coupled to a flushing gas source 414 (e.g., similar to flushing gas source 14 in Figure 1), the flushing gas source may contain a flushing gas (e.g., an inert gas or a less reactive gas, such as nitrogen, helium, argon, or the like). The flushing passage 420 may be provided through a chamber sidewall and / or a partition plate 470. Thus, the flushing passage 420 may include an outlet in the reaction chamber adjacent to the spring 440. Before, after, and / or during deposition steps in the deposition process, the flushing gas may flow from the flushing gas source 414 through the flushing passage 420 to the reaction chamber adjacent to the spring 440 (e.g., between deposition steps, or steps involving the introduction of reactants into the reaction chamber). Such flushing (e.g., near spring 440) can be configured to mitigate the risk of unwanted deposits on spring 440.

[0049] Although exemplary embodiments of the present disclosure are presented herein, it should be understood that the disclosure is not limited thereto. For example, although reactor systems are described in conjunction with various specific configurations, the disclosure is not necessarily limited to these examples. Various modifications, variations, and enhancements may be made to the systems and methods presented herein without departing from the spirit and scope of the disclosure.

[0050] The subject matter of this disclosure includes all novel and non-obvious combinations and sub-combinations of the various systems, components and configurations and other features, functions, actions and / or properties disclosed herein, as well as any and all equivalents thereof. [Simplified Explanation of the Diagram]

[0016] Although this specification concludes with the scope of the claims specifically pointed out and explicitly asserted as the embodiments of the present disclosure, the advantages of the embodiments of the present disclosure can be more readily appreciated from the description of certain examples of the embodiments when read in conjunction with the accompanying drawings. Elements with similar element numbers throughout the drawings are intended to be identical. Figure 1 is a schematic diagram of an exemplary reactor system according to various embodiments; Figure 2A is a schematic diagram of an exemplary reaction chamber according to various embodiments having a base disposed in a lower position; Figure 2B is a schematic diagram of an exemplary reaction chamber according to various embodiments having a base disposed in a raised position; Figure 3 illustrates a schematic diagram of a portion of a reaction chamber according to various embodiments; Figures 4A and 4B illustrate schematic diagrams of a portion of a reaction chamber according to various embodiments; Figure 5 illustrates a spring for providing a seal within the reaction chamber according to various embodiments; Figure 6 illustrates another spring for providing a seal within the reaction chamber according to various embodiments; and Figure 7 illustrates a method for maintaining a seal within the reaction chamber according to various embodiments. It should be understood that the elements in the drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, some elements in the drawings may be enlarged relative to other elements to help improve the understanding of the illustrated embodiments.

Claims

1. A reaction chamber comprising: a reaction chamber volume enclosed within the reaction chamber; a base configured to support a substrate disposed within the reaction chamber volume, the base configured to translate vertically along an axis within the reaction chamber; a reaction space above the base within the reaction chamber volume; a lower chamber space below the base within the reaction chamber volume; and a sealing system causing at least partial fluid separation between the reaction space and the lower chamber space, wherein the sealing system comprises: a spacer surrounding the base, wherein the base is coupled to the spacer; A flow control ring is disposed around the base and between the base and the spacer; and a spring is coupled to the spacer and the base, the spring having a spring bias toward a compressed position or an extended position, such that the spring bias facilitates the establishment of at least a partial seal between the spacer and the base, causing at least a partial fluid separation between the reaction space and the lower chamber space when the base moves up and down in the reaction chamber, and wherein the spring is disposed between the flow control ring and the spacer, such that the spring is coupled to the base via the flow control ring, and wherein the at least partial seal between the spacer and the base is facilitated by the spring bias between the flow control ring and the spacer.

2. The reaction chamber of claim 1, wherein the spring is disposed between the upper surface of the flow control ring and the lower surface of the spacer.

3. The reaction chamber of claim 2, wherein the spring is biased toward the extended position such that a downward force from the spring is applied to the flow control ring, which is based on a downward force on the base, such that at least a partial seal is formed between the flow control ring and the base, and the at least partial fluid separation is formed between the reaction space and the lower chamber space.

4. The reaction chamber of claim 1, wherein the spring forms at least a partial seal between the spring and the spacer and between the spring and the flow control ring.

5. The reaction chamber of claim 4, wherein the spring is fixedly coupled to at least one of the spacer or the flow control ring.

6. The reaction chamber of claim 1, wherein the spring surrounds the base, wherein the spring comprises a cross-sectional shape having at least one warp.

7. The reaction chamber of claim 6, wherein the cross-sectional shape of the spring includes an E-shape having one of three warps.

8. The reaction chamber of claim 1, wherein the spring is disposed at a first point near the base, wherein the reaction chamber further includes a second spring disposed at a second point near the base, such that a force on the base derived from the spring occurs at multiple points.

9. The reaction chamber of claim 1, further comprising a gas distribution device disposed above the base in the reaction space, wherein the spring allows an adjustable distance between the base and the gas distribution device, with a difference of up to nine millimeters, while still maintaining the at least partial fluid separation between the reaction space and the lower chamber space.

10. The reaction chamber of claim 1, wherein the spring comprises at least one of a metal or a metal alloy.

11. The reaction chamber of claim 10, wherein the spring comprises at least one of stainless steel or a nickel alloy.

12. A reactor system comprising a reaction chamber as claimed in any one of claims 1 to 11.

13. The reactor system of claim 12, further comprising a vacuum source in fluid communication with the lower chamber space.

14. A method for adjusting a sealing system within a reaction chamber, comprising: translating a base in the reaction chamber upward from a first position to a second position; applying a force to a spring coupled between the base and a spacer in response to the movement of the base, wherein the spring has a spring bias toward a compressed position or an extended position; maintaining at least a partial seal between the spacer and the base in response to the applied force on the spring during the movement of the base, such that at least a partial fluid separation occurs between a reaction space above the base and a lower chamber space below the base in the reaction chamber; and creating a downward force on the base via the spring bias, which facilitates the at least partial fluid separation between the reaction space and the lower chamber space; and wherein the reaction chamber further comprises a flow control ring disposed between the base and the spacer, wherein the spring is disposed between the flow control ring and the spacer such that the spring is coupled to the base via the flow control ring.

15. The method of claim 14, wherein the force applied to the spring includes a compressive force, and wherein the spring is biased toward the extended position.

16. The method of claim 14, further comprising: in response to the movement of the base, moving one upper surface of the flow control ring closer to one lower surface of the spacer, wherein the force applied to the spring is a compressive force between the upper surface of the flow control ring and the lower surface of the spacer.

17. The method of claim 16, further comprising: maintaining at least a portion of the seal between the spring and the spacer and between the spring and the flow control ring during the movement of the base.

Images