Manufacturing methods of support plates and workpieces

Abstract

The support sheet of the present invention comprises a substrate and an adhesive layer disposed on one side of the substrate; when the support sheet is attached to the surface of an SUS board by means of the adhesive layer and the adhesive layer is heated at 130°C, the adhesion (Y2) between the heated adhesive layer and the SUS board is 13000mN / 25mm or more; when the support sheet is attached to the mirror surface of a silicon mirror wafer by means of the adhesive layer and the adhesive layer is heated at 130°C, and the heated adhesive layer is subjected to energy line hardening, the adhesion (X1) between the hardened adhesive layer and the silicon mirror wafer is 400mN / 25mm or less.

Description

Manufacturing methods of support plates and workpieces This invention relates to a support sheet and a method for manufacturing a workpiece. This application claims priority based on Japanese Patent Application No. 2022-052004, filed on March 28, 2022, the contents of which are incorporated herein by reference. When processing wafers and other workpieces to manufacture wafers and other workpieces, support sheets are used. A typical support sheet includes a substrate and an adhesive layer disposed on one side of the substrate. The adhesive layer in the support sheet is attached to the workpiece being processed, and the support sheet fixes the workpiece during processing. In the case of cutting, the support sheet functions as a cutting blade. The resulting workpiece is eventually detached from the support sheet and picked up for its intended use. In this case, if the adhesive layer is line-hardened, by line-hardening the adhesive layer, the adhesion between the hardened adhesive layer and the workpiece is reduced, thus making it easier to pick up the workpiece. On the side of the adhesive layer opposite to the substrate side, a protective film forming film is sometimes further provided to form a protective film on the workpiece, thus constituting a protective film forming composite sheet. The protective film forming film in the protective film forming composite sheet is, for example, attached to the workpiece being processed. The protective film forming composite sheet fixes the workpiece during processing and forms a protective film on the workpiece or the processed workpiece. The resulting processed workpiece is finally detached from the support sheet in a state with the protective film and picked up for its intended use. Furthermore, similarly, when the adhesive layer is energy-line hardening, energy-line hardening of the adhesive layer makes it easier to pick up the processed workpiece with the protective film. On the other hand, the support sheet is sometimes heated while a workpiece or workpiece workpiece is attached to it. This heating is sometimes performed to remove foreign matter such as low-molecular-weight resin components adhering to the surface of the workpiece. Additionally, it is sometimes performed to dry the workpiece workpiece after removing fine foreign matter generated during workpiece cutting or other processing by washing it with water. Furthermore, these heating processes typically have an upper limit of approximately 135°C. However, if the heat resistance of the support sheet is insufficient, when the support sheet with the attached workpiece or workpiece workpiece workpiece is heated to this temperature, it may become impossible to pick up the workpiece workpiece from the support sheet. Furthermore, this heating of the support sheet is sometimes performed while the support sheet is subsequently fixed to an annular frame. In this case, at least a portion of the heated support sheet may peel off from the annular frame. As a heat-resistant support sheet suitable for heating, a support sheet (for workpiece processing) is disclosed, comprising a substrate and an adhesive layer, wherein the Young's modulus of the substrate at 23°C and the storage modulus E' of the substrate at 120°C after heating for 4 hours are both specified within specific ranges (see Patent Document 1). [Prior Art Documents] [Patent Documents] [Patent Document 1] Japanese Patent Application Publication No. 2021-119592. [The problem that the invention aims to solve] However, the support sheet disclosed in Patent Document 1 does not assume an upper limit of approximately 135°C for heating. Moreover, under such conditions, when the support sheet is heated, it is impossible to determine whether the workpiece can be picked up normally from the support sheet, or whether the peeling of the support sheet from the annular frame is suppressed. The object of this invention is to provide a support sheet comprising a substrate and an adhesive layer. The adhesive layer is energy-line hardening, ensuring that even when the support sheet with a workpiece or workpiece attached is heated, the workpiece can still be normally picked up from the support sheet. Furthermore, even when the support sheet is heated while fixed to an annular frame, peeling of the support sheet from the annular frame is prevented. [Means for solving the problem] In order to solve the above problems, the present invention adopts the following configuration. [1]. A support sheet, the support sheet having a substrate and an adhesive layer disposed on one side of the substrate; the adhesive layer is energy line hardening; when the support sheet is attached to the surface of a stainless steel plate by means of the adhesive layer and the adhesive layer is heated at 130°C after attachment, and the adhesion (Y2) between the heated adhesive layer and the stainless steel plate is measured, the adhesion (Y2) is 13000mN / 25mm or more; when the support sheet is attached to the mirror surface of a silicon mirror wafer by means of the adhesive layer and the adhesive layer is heated at 130°C after attachment, and the heated adhesive layer is energy line hardened, and the adhesion (X1) between the energy line hardened adhesive layer and the silicon mirror wafer is measured, the adhesion (X1) is 400mN / 25mm or less. [2]. The support sheet as described in [1], wherein the aforementioned adhesive layer comprises an energy-curing compound and an energy-curing acrylic resin. [3]. The support sheet as described in [1] or [2], wherein when the aforementioned support sheet is attached to the surface of a stainless steel plate by means of the aforementioned adhesive layer, and the aforementioned adhesive layer is heated at 130°C after attachment, and the aforementioned adhesive layer is subjected to energy-curing after heating, and the adhesion (Y1) between the energy-cured adhesive layer and the aforementioned stainless steel plate is measured, the aforementioned adhesion (Y1) is 300mN / 25mm or more. [4]. The support sheet described in any of [1] to [3], wherein when the support sheet is attached to the surface of the silicon mirror wafer by means of the adhesive layer, and the adhesive layer after attachment is heated to 130°C, and the adhesion force (X2) between the heated adhesive layer and the silicon mirror wafer is measured, the adhesion force (X2) is 13000mN / 25mm or more. [5]. The support sheet described in any of [1] to [4], wherein when the support sheet is attached to the mirror surface of the silicon mirror wafer by means of the adhesive layer, and the silicon mirror wafer with the support sheet is kept at a temperature of 23°C for 30 minutes, the adhesion force (X0) between the adhesive layer and the silicon mirror wafer is measured, the adhesion force (X0) is 2000mN / 25mm or more. [6]. A method for manufacturing a workpiece comprises the following steps: an attachment step, wherein the adhesive layer of a support sheet as described in any one of [1] to [5] is attached to a workpiece and an annular frame, thereby fixing the workpiece with the support sheet to the annular frame, wherein the workpiece with the support sheet comprises the aforementioned workpiece and the aforementioned support sheet disposed on the aforementioned workpiece; a heating step, wherein, after the attachment step, the aforementioned adhesive layer of the support sheet fixed to the annular frame is heated; a processing step, wherein, after the attachment step, the aforementioned workpiece is processed by processing the aforementioned workpiece fixed to the annular frame with the support sheet to produce the aforementioned workpiece; a hardening step, wherein, after the heating step and the processing step, the aforementioned adhesive layer attached to the annular frame is subjected to energy line hardening; and a pickup step, wherein, after the hardening step, the workpiece is picked up by peeling the hardened material from the aforementioned adhesive layer. [Effects of the Invention] According to the present invention, a support sheet is provided, which comprises a substrate and an adhesive layer; the aforementioned adhesive layer is energy-line hardening, so that even when the support sheet is heated in a state where a workpiece or workpiece is attached, the workpiece can still be picked up normally from the support sheet, and even when the support sheet is heated in a state where it is fixed to an annular frame, the support sheet can still be prevented from peeling off from the annular frame. ◇Support Sheet One embodiment of the present invention comprises a substrate and an adhesive layer disposed on one side of the substrate; the adhesive layer is energy-line hardening; the support sheet is attached to the surface of a stainless steel plate by means of the adhesive layer, and the adhesive layer after attachment is heated to 130°C. When the adhesion force (Y2) between the adhesive layer and the stainless steel plate after heating is measured (sometimes referred to as "adhesion force (Y2)" in this specification), the adhesion force (Y2) is... For a value of 13000mN / 25mm or higher, the aforementioned support sheet is attached to the mirror surface of the silicon mirror wafer using the aforementioned adhesive layer. The adhesive layer is then heated at 130°C to perform energy line hardening. When the adhesion (X1) between the energy line hardened adhesive layer and the aforementioned silicon mirror wafer is measured (sometimes referred to as "adhesion (X1)" in this specification), the aforementioned adhesion (X1) is 400mN / 25mm or lower. The support sheet of this embodiment, as described below, can be used to manufacture workpieces. The support sheet of this embodiment, as described below, can also form a composite sheet for forming a protective film by forming a film-laden layer with a protective film. Support sheets with attached workpieces or processed workpieces are sometimes heated at high temperatures while fixed to an annular frame. This heating is sometimes performed, for example, to remove foreign matter such as low-molecular-weight resin components adhering to the surface of the workpiece. Additionally, it is sometimes used to dry the workpiece after removing fine foreign matter adhering to the surface of the processed workpiece generated during cutting or other processing by washing with water. Furthermore, these heating processes typically have an upper limit of approximately 135°C. The support sheet of this embodiment, with an adhesion strength (Y2) of 13000 mN / 25 mm or higher, can prevent peeling from the annular frame even when heated at high temperatures while fixed to it. In the support sheet of this embodiment, since the aforementioned adhesive strength (X1) is 400mN / 25mm or less, even after heating the support sheet with the workpiece or workpiece attached to it at a high temperature, and then creating a workpiece on the support sheet, causing the adhesive layer in the support sheet to harden and become a hardened support sheet, the workpiece can be picked up normally from the hardened support sheet, resulting in high pick-up performance. The purpose of heating the support sheet at a high temperature is the same as described above. In this specification, especially to distinguish it from a support sheet in the uncured state of the adhesive layer, a support sheet after the adhesive layer has been cured is sometimes referred to as a "cured support sheet". In this instruction manual, "normal temperature" means a temperature that is neither particularly cold nor particularly hot, that is, a normal temperature, such as temperatures ranging from 18°C ​​to 28°C. In this embodiment, examples of workpieces include wafers, semiconductor device panels, etc. Examples of wafers mentioned above include: semiconductor wafers composed of elemental semiconductors such as silicon, germanium, and selenium, or compound semiconductors such as GaAs, GaP, InP, CdTe, ZnSe, and SiC; and insulator wafers composed of insulators such as sapphire and glass. Circuits are formed on one side of a workpiece represented by these wafers. In this specification, the side of the workpiece on which the circuit is formed is called the "circuit surface." Furthermore, the side of the workpiece opposite to the circuit surface is called the "inner surface." The wafer is divided into wafers by methods such as dicing. Similarly, in this specification, as with wafers, the side of the wafer on which the circuit is formed is called the "circuit surface," and the side of the wafer opposite to the circuit surface is called the "inner surface." Preferably, bumps, pillars, or other protruding electrodes are provided on the circuit surface of the workpiece. These protruding electrodes are preferably made of solder. The aforementioned semiconductor device panel is operated during the manufacturing process of the semiconductor device. As a specific example of the aforementioned semiconductor device panel, a semiconductor device panel can be formed by using one or more electronic components sealed with sealing resin and arranging multiple of these semiconductor devices in a planar manner within a circular, rectangular, or other shaped area. In this embodiment, the workpiece processed object is an article obtained by processing a workpiece. For example, when the workpiece is a wafer, a wafer can be listed as a workpiece processed object, and when the workpiece is a semiconductor wafer, a semiconductor wafer can be listed as a workpiece processed object. In this specification, the term "energy line" refers to a beam of electromagnetic waves or charged particles possessing energy quanta. Examples of energy lines include ultraviolet light, radiation, and electron beams. Ultraviolet light can be obtained by irradiation using high-pressure mercury lamps, fusion lamps, xenon lamps, black light lamps, or LED (Light Emitting Diode) lamps as ultraviolet light sources. Electron beams can be obtained by irradiating electron beams generated by electron beam accelerators. In this specification, the term "energy line hardening property" refers to the property of hardening by irradiation of an energy line, and the term "non-energy line hardening property" refers to the property of not hardening even when irradiated with an energy line. In this specification, the term "non-hardening property" refers to the property of not hardening by any method, such as heating or irradiating an energy line. Figure 1 is a cross-sectional view schematically illustrating an example of a support sheet according to one embodiment of the present invention. Furthermore, for ease of understanding of the features of the present invention, the figures used in the following description are sometimes shown as enlarged portions of key parts for convenience, and are not limited to having the same dimensional ratios as the actual components. The support sheet 1 shown here is composed of a substrate 11 and an adhesive layer 12 disposed on one side 11a of the substrate 11. The support sheet 1 further includes a release film 13 disposed on the side 12a of the adhesive layer 12 opposite to the side of the substrate 11. The side 11a of the substrate 11 may be, for example, a matte surface or a non-matte surface (e.g., a glossy surface with low unevenness). The adhesive layer 12 is energy-curable. The aforementioned adhesion (Y2) measured using the support sheet 1 is 13000 mN / 25 mm or more, and the aforementioned adhesion (X1) is 400 mN / 25 mm or less. In this specification, the term "matte surface" refers to a surface with relatively large and rough texture and relatively low gloss, which appears to have been treated with a matte finish. The support sheet of this embodiment is not limited to the support sheet shown in FIG1. ​​Within the scope of not impairing the effects of the present invention, some components can be modified, deleted, or added to the support sheet shown in FIG1. ​​For example, the support sheet 1 shown in FIG1 includes a release film 13, but in the support sheet of this embodiment, the release film can be of any configuration, and the support sheet of this embodiment may also not include a release film. For example, the support sheet 1 shown in FIG1 includes a substrate 11, an adhesive layer 12, and a release film 13, but the support sheet of this embodiment may also include other layers that are not equivalent to any of the substrate, adhesive layer, and release film. The aforementioned other layers can be arbitrarily selected according to the objective and are not particularly limited. However, in the support sheet of this embodiment, it is preferable that the substrate and adhesive layer are in direct contact with each other, and the adhesive layer and release film are in direct contact with each other. Next, details of each layer of the support sheet constituting this embodiment will be explained. [Adhesive layer, adhesive composition (I)] The aforementioned adhesive layer is in sheet or film form and is energy-curable. The properties of the adhesive layer can be adjusted before and after curing. The adhesive layer can consist of one layer (single layer) or multiple layers (two or more). When it consists of multiple layers, these multiple layers can be the same or different from each other, and there are no particular restrictions on the combination of these multiple layers. In this specification, the situation is not limited to the adhesive layer. The phrase "multilayers may be the same or different" means that "all layers may be the same, all layers may be different, or only some layers may be the same". Furthermore, the phrase "multilayers may be different" means that "at least one of the constituent materials and thicknesses of each layer is different". The thickness of the adhesive layer is not particularly limited, but is preferably 1 μm to 100 μm, more preferably 3 μm to 60 μm, further preferably 5 μm to 30 μm, and even more preferably 8 μm to 25 μm. With the adhesive layer thickness within this range, when the adhesive layer is applied to the matte surface of the substrate, the embedding properties of the adhesive layer into the matte surface of the substrate become better, and the pick-up performance of the workpiece from the hardened support sheet becomes higher. Here, "thickness of the adhesive layer" refers to the overall thickness of the adhesive layer; for example, the thickness of an adhesive layer composed of multiple layers refers to the total thickness of all the layers constituting the adhesive layer. In this specification, the term "thickness" is not limited to the case of adhesive layer. Unless otherwise specified, "thickness" refers to the average value of the thickness measured at 5 randomly selected locations on the object, which can be obtained using a constant pressure thickness measuring instrument according to JIS K7130. An adhesive layer can be formed using an adhesive composition comprising the adhesive layer. For example, an adhesive composition is applied to the surface to which the adhesive layer is to be formed, and then dried as needed, thereby forming an adhesive layer on the target area. The ratio of the content of components in the adhesive composition that do not vaporize at room temperature is usually the same as the ratio of the content of the aforementioned components in the adhesive layer. In the adhesive layer, the proportion of the total content of one or more of the following ingredients in the adhesive layer does not exceed 100% by mass relative to the total mass of the adhesive layer. Similarly, in the adhesive composition, the proportion of the total content of one or more of the following ingredients in the adhesive composition does not exceed 100% by mass relative to the total mass of the adhesive composition. The application of the adhesive composition can be carried out using known methods, such as the following types of coating machines: air knife coating machine, doctor blade coating machine, bar coating machine, gravure coating machine, roller coating machine, roller knife coating machine, curtain coating machine, die coating machine, knife coating machine, screen coating machine, Mayer bar coating machine, and light-touch coating machine. There are no particular limitations on the drying conditions of the adhesive composition. However, when the adhesive composition contains the solvent described later, it is preferable to perform heat drying. Furthermore, adhesive compositions containing solvent are preferably heat dried at, for example, 70°C to 130°C for 10 seconds to 5 minutes. When an adhesive layer is applied to a substrate, for example, an adhesive composition is applied to the substrate and dried as needed. Alternatively, an adhesive composition is applied to a release film and dried as needed, thereby pre-forming an adhesive layer on the release film. The exposed surface of this adhesive layer adheres to a surface of the substrate (e.g., a matte or glossy surface), thus allowing an adhesive layer to be deposited on the substrate. In this case, the release film can be removed at any point during the manufacturing or use of the support sheet. The adhesive layer preferably contains a line-curing compound (α). By using an adhesive layer containing the aforementioned line-curing compound (α), it becomes easier to adjust both the aforementioned adhesion (X1) and adhesion (Y2). That is, as a preferred adhesive composition, an adhesive composition (I) containing the line-curing compound (α) can be cited as an example. [Energy Line Curing Compound (α)] The aforementioned energy line curing compound (α) is not particularly limited as long as it possesses energy line curing properties. The viscosity of the energy line curing compound (α) at ​​23°C is preferably 350 mPa·s or less, for example, any one of 320 mPa·s or less, 220 mPa·s or less, 120 mPa·s or less, and 60 mPa·s or less. The lower the viscosity, the better the adhesion of the adhesive layer to the matte surface of the substrate. The lower limit of the viscosity of the energy line curing compound (α) at ​​23°C is not particularly limited. For example, the aforementioned energy line curing compound (α) with a viscosity of 5 mPa·s or more is more readily available. The viscosity of the energy-line hardening compound (α) at ​​23°C is, for example, any one of 5 mPa·s to 350 mPa·s, 5 mPa·s to 320 mPa·s, 5 mPa·s to 220 mPa·s, 5 mPa·s to 120 mPa·s, and 5 mPa·s to 60 mPa·s or less. However, these are only examples of the aforementioned viscosities. The viscosity of an energy-line hardening compound (α) at ​​23°C can be measured, for example, using a single-cylinder B-type (Brookfield) rotational viscometer. Examples of energy-line hardening compounds (α) include monomers or oligomers having energy-line polymerizable unsaturated groups and capable of being hardened by irradiation with energy lines. A molecule of the energy-line hardening compound (α) has one or more of the aforementioned energy-line polymerizable unsaturated groups, and may also have three or more, but preferably one or two. Examples of energy-line polymerizable unsaturated groups include (meth)acrylic acid groups. In this specification, the concept of "(meth)acrylic" includes both "acrylic" and "methacrylic". The same applies to similar terms; for example, the concept of "(meth)acrylic acid" includes both "acrylic acid" and "methacrylic acid", and the concept of "(meth)acrylate" includes both "acrylate" and "methacrylate". The energy line hardening compound (α) is preferably a (meth)acrylate with substituents. Examples of substituent-containing (meth)acrylates include compounds having the following structure: one or more carbon atoms in the hydrocarbon group derived from the alcohol (the hydrocarbon group bonded to the oxygen atom that does not constitute the carbonyl group in the oxycarbonyl group (-OC(=O)-)) and the hydrogen atom bonded to that carbon atom (e.g., in the form of -CH) The 2- and =CH- units are substituted by substituents. However, two adjacent carbon atoms are not substituted by substituents. As an energy line hardening compound (α), the aforementioned hydrocarbon group in the (meth)acrylate can be any of a straight-chain, branched, or cyclic form, and in the case of a cyclic form, it can be any of a monocyclic or polycyclic form. The aforementioned hydrocarbon group can also have both a chain structure (either a straight-chain structure or a branched structure, or both) and a cyclic structure. The aforementioned hydrocarbon group can be any one of aliphatic hydrocarbon group and aromatic hydrocarbon group, and the aforementioned aliphatic hydrocarbon group can be any one of saturated aliphatic hydrocarbon group and unsaturated aliphatic hydrocarbon group. In this specification, a hydrocarbon group having only an aliphatic group and no aromatic cyclic group is an aliphatic hydrocarbon group, and a hydrocarbon group having both an aliphatic group and an aromatic cyclic group or having only an aromatic cyclic group is an aromatic hydrocarbon group. The aforementioned hydrocarbon group is preferably a cyclic structure, that is, a cyclic hydrocarbon group or a hydrocarbon group that has both a chain structure and a cyclic structure. The aforementioned hydrocarbon group is preferably alkyl, alkylene, or aralkyl (arylalkyl). The aforementioned substituent can be a group of atoms with a structure consisting of multiple atoms bonded together, or it can be a single atom. Preferred examples of the aforementioned substituent include oxygen atoms (-O-). When the aforementioned hydrocarbon group has the aforementioned substituents, the number of substituents is appropriately adjusted according to the type of hydrocarbon group, and is usually preferably 1 to 4, more preferably 1 to 3. The aforementioned hydrocarbon group preferably has 3 to 20 carbon atoms, for example, any of 3 to 16, 3 to 12, and 3 to 8, or any of 4 to 20, 9 to 20, and 13 to 20, or any of 4 to 16 and 9 to 14. However, these are just examples of the aforementioned carbon numbers. Here, the term "carbon number of the hydrocarbon group," when the hydrocarbon group has the aforementioned substituents, refers to the number of carbon atoms of the hydrocarbon group before the substituent substitution. For example, when the hydrocarbon group only has an oxygen atom (-O-) as a substituent, the term "carbon number of the hydrocarbon group" refers to the number of carbon atoms of the hydrocarbon group before the oxygen atom is replaced by a methylene group (-CH). 2-) The number of carbon atoms in the hydrocarbon group before substitution. The aforementioned hydrocarbon group is preferably a hydrocarbon group having a cyclic structure and may have an oxygen atom as a substituent; more preferably a hydrocarbon group having both a chain structure and a cyclic structure and may have an oxygen atom as a substituent; further preferably an aliphatic hydrocarbon group or an aromatic hydrocarbon group that may have an oxygen atom as a substituent; further preferably an aromatic hydrocarbon group containing both an aliphatic group with an oxygen atom as a substituent and an aromatic cyclic group without substituents (in this specification, the energy line hardening compound (α) in this case is sometimes referred to as an "energy line hardening compound"). α1), or aliphatic hydrocarbon groups containing both a cyclic structure without substituents and a chain structure without substituents (in this specification, the energy line curing compound (α) in this case is sometimes referred to as "energy line curing compound (α2)"), or aliphatic hydrocarbon groups containing both a cyclic structure with oxygen atoms as substituents and a chain structure without substituents (in this specification, the energy line curing compound (α) in this case is sometimes referred to as "energy line curing compound (α3)"). By using such energy line curing compound (α), when an adhesive layer is provided on the matte surface of a substrate, the embedding of the adhesive layer into the matte surface of the substrate becomes more pronounced. As an example of the aforementioned energy line hardening compound (α1), energy line hardening compound (α)-1 described in the following examples can be listed. As an example of the aforementioned energy line hardening compound (α2), energy line hardening compound (α)-2 described in the following examples can be listed. As an example of the aforementioned energy line hardening compound (α3), energy line hardening compound (α)-3 described in the following examples can be listed. The molecular weight of the energy-line curing compound (α) is not particularly limited, but is preferably below 500. By using this energy-line curing compound (α), the properties of the adhesive layer are improved. For example, when the adhesive layer is applied to the matte surface of the substrate, the embedding ability of the adhesive layer into the matte surface of the substrate is increased. The molecular weight of the energy line curing compound (α) is preferably from 100 to 500, more preferably from 200 to 400, for example, any one of 200 to 310 and 200 to 280, or any one of 250 to 400 and 310 to 400, or 250 to 310. By having a molecular weight below the aforementioned upper limit, the properties of the adhesive layer (e.g., the embedding of the adhesive layer into the matte surface of the substrate) become better. By having a molecular weight above the aforementioned lower limit, the structure of the adhesive layer is further stabilized. However, these are just examples of the molecular weight of the energy line curing compound (α). Energy line curing compounds (α1), (α2), and (α3) having any of the molecular weights shown herein are particularly preferred energy line curing compounds (α). The energy line hardening compound (α) is preferably a (meth)acrylate having a structure in which one or more carbon atoms of a hydrocarbon group derived from an alcohol in the (meth)acrylate are replaced by substituents along with hydrogen atoms bonded to those carbon atoms, and the aforementioned hydrocarbon group has a cyclic structure and a molecular weight of 500 or less. This energy line hardening compound (α) is preferably an alkyl, alkylene, or aralkyl group; preferably an oxygen atom; preferably an energy line hardening compound (α1), an energy line hardening compound (α2), or an energy line hardening compound (α3); preferably a molecular weight within any of the further defined numerical ranges above; and more preferably, satisfying one or more of these four conditions simultaneously. The adhesive layer and adhesive composition (I) may contain only one type of energy line hardening compound (α) or two or more types. In the case of two or more types, the combination and ratio of these energy line hardening compounds (α) can be arbitrarily selected. In the adhesive composition (I), the content of the energy line curing compound (α) relative to the total content of all components other than the solvent is preferably 5% by mass or more, and can be any one of 10% by mass or more, or 14% by mass or more. On the other hand, the aforementioned proportion is 100% by mass or less. This is synonymous with the following situation: the content of the energy line curing compound (α) in the adhesive layer is preferably 5% by mass or more, and can be any one of 10% by mass or more, or 14% by mass or more, and the aforementioned proportion is 100% by mass or less. The reason is that, based on the process of forming a resin film by removing the solvent from the resin composition containing the solvent, the amount of components other than the solvent usually does not change, and the content ratio of components other than the solvent is the same in the resin composition and the resin film. Therefore, in this specification, the following is not limited to the case of the adhesive layer, and the content of components other than the solvent is only described in the content of the resin film after the solvent is removed from the resin composition. [Energy Line Curing Acrylic Resin (Ia)] The aforementioned adhesive layer and adhesive composition (I) preferably further contain energy line curing acrylic resin (also referred to as "energy line curing acrylic resin (Ia)" in this specification), that is, preferably simultaneously contain both energy line curing compound and energy line curing acrylic resin. By using an adhesive layer containing energy line curing compound (α) and energy line curing acrylic resin (Ia), both adhesive strength (X1) and adhesive strength (Y2) can be more easily adjusted. As an example of the aforementioned energy-line curable acrylic resin (Ia), a resin having a structure in which unsaturated groups are introduced into the side chains of a non-energy-line curable acrylic resin can be cited. [Non-energy-line curable acrylic resin] Examples of non-energy-line curable acrylic resins include acrylic polymers having constituent units derived from (meth)acrylate alkyl esters and constituent units derived from functionalized monomers. Examples of alkyl (meth)acrylates that constitute the aforementioned alkyl esters include alkyl (meth)acrylates in which the alkyl group has 1 to 20 carbon atoms. The alkyl group constituting the aforementioned alkyl ester can be linear, branched, or cyclic, but is preferably linear or branched. Among the aforementioned alkyl methacrylates, those in which the alkyl group is linear or branched include, for example: methyl methacrylate, ethyl methacrylate, n-propyl methacrylate, isopropyl methacrylate, n-butyl methacrylate, isobutyl methacrylate, dibutyl methacrylate, tributyl methacrylate, pentyl methacrylate, hexyl methacrylate, heptyl methacrylate, 2-ethylhexyl methacrylate, isooctyl methacrylate, n-octyl methacrylate, and propyl methacrylate. Nonyl acrylate, isononyl acrylate, decyl acrylate, undecyl acrylate, lauryl acrylate, tridecyl acrylate, myristyl acrylate, pentadecyl acrylate, palmitate acrylate, hexadecyl acrylate, stearyl acrylate, nonadecanyl acrylate, eicosyl acrylate, etc. Among the aforementioned alkyl methacrylates, those with cyclic alkyl groups include, for example, isobornyl methacrylate and dicyclopentyl methacrylate. From the above perspective, which can reduce the adhesion (X1), the aforementioned alkyl methacrylate is preferably 2-ethylhexyl acrylate, 2-ethylhexyl methacrylate, dodecyl acrylate (lauryl acrylate), or dodecyl methacrylate (lauryl methacrylate). As examples of the aforementioned functionalized monomers, the following monomers can be listed: they can become the starting point for crosslinking by reacting the aforementioned functionalized group with the crosslinking agent described later, or they can introduce unsaturated groups into the side chains of acrylic polymers by reacting the aforementioned functionalized group with a group that can bond (react) with a non-energy-line-curing acrylic resin in the unsaturated group compound described later. Examples of functionalized monomers include hydroxyl-containing monomers, carboxyl-containing monomers, amine-containing monomers, and epoxy-containing monomers. Examples of the aforementioned hydroxyl-containing monomers include: hydroxymethyl methacrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate, 3-hydroxypropyl methacrylate, 2-hydroxybutyl methacrylate, 3-hydroxybutyl methacrylate, 4-hydroxybutyl methacrylate, and other hydroxyalkyl methacrylates; and unsaturated alcohols (unsaturated alcohols without a methacrylic skeleton) such as vinyl alcohol and allyl alcohol. Among these, from the viewpoint of minimizing adhesion (X1), the aforementioned hydroxyl-containing monomers are preferably hydroxyalkyl methacrylates, and more preferably 2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate, or 2-hydroxybutyl methacrylate. Examples of the aforementioned carboxyl-containing monomers include: (meth)acrylic acid, butenoic acid, and other ethylene-unsaturated monocarboxylic acids (monocarboxylic acids with ethylene-unsaturated bonds); fumaric acid, iconic acid, maleic acid, citracic acid, and other ethylene-unsaturated dicarboxylic acids (dicarboxylic acids with ethylene-unsaturated bonds); anhydrides of the aforementioned ethylene-unsaturated dicarboxylic acids; and (meth)acrylic acid carboxylalkyl esters such as 2-carboxyethyl methacrylate. Examples of epoxy-containing monomers include glycidyl acrylates containing glycidyl groups, such as glycidyl acrylate. The aforementioned functionalized monomers are preferably hydroxyl-containing monomers. Non-energy-line curable acrylic resins may also have constituent units derived from other monomers that are not equivalent to any of the constituent units derived from (meth)acrylate alkyl esters or from any of the aforementioned functionalized monomers. There are no particular limitations on the other monomers mentioned above, as long as they can copolymerize with alkyl (meth)acrylates, etc. Examples of such other monomers include: styrene, α-methylstyrene, vinyltoluene, vinyl formate, vinyl acetate, acrylonitrile, acrylamide, etc. The non-energy-line curable acrylic resin may have only one type of constituent unit derived from (meth)acrylate, a constituent unit derived from the aforementioned functionalized monomer, and a constituent unit derived from the aforementioned other monomers, or may have two or more types of constituent units. In the case of two or more types, the combination and ratio of these constituent units may be arbitrarily selected. In non-energy-line curable acrylic resins, the content of constituent units derived from (meth)acrylate is preferably 65% ​​to 99% by mass relative to the total amount of constituent units. In non-energy-line curable acrylic resins, the content of constituent units derived from functionalized monomers is preferably 1% to 35% by mass relative to the total amount of constituent units. In non-energy-line curable acrylic resins, the content of constituent units derived from the aforementioned other monomers is preferably 0% to 10% by mass relative to the total amount of constituent units. Energy-line curable acrylic resin (Ia) is obtained, for example, by reacting the aforementioned functional groups in a non-energy-line curable acrylic resin with an unsaturated group-containing compound having energy-line polymerizable unsaturated groups. The aforementioned unsaturated group-containing compounds, in addition to possessing the aforementioned energy-line polymerizable unsaturated groups, further possess groups that can bond to non-energy-line curable acrylic resins through reaction with functional groups in the non-energy-line curable acrylic resin. Examples of the aforementioned energy-line polymerizable unsaturated groups include (meth)acrylyl, vinyl (ethylene), and allyl (2-propenyl), with (meth)acrylyl being preferred. Examples of groups that can bond to the aforementioned functional groups in the non-energy-line curable acrylic resin include isocyanate groups and glycidyl groups that can bond to hydroxyl or amino groups, and hydroxyl and amino groups that can bond to carboxyl or epoxy groups. Examples of compounds containing unsaturated groups include: (meth)acryloxyethyl isocyanate, (meth)acrylyl isocyanate, and (meth)acrylate glycidyl ester. When obtaining a linearly curable acrylic resin (Ia) by reacting the aforementioned functional groups in a non-linearly curable acrylic resin with an unsaturated compound having linearly polymerizable unsaturated groups, the total number of moles of the aforementioned unsaturated groups in the unsaturated compound, relative to the total number of moles of the aforementioned functional groups in the non-linearly curable acrylic resin, can be either 0.6 times or more or 0.75 times or more, preferably 0.8 times or more, more preferably 0.85 times or more, and even more preferably 0.9 times or more. The higher the total number of moles of the aforementioned unsaturated groups, the lower the adhesion (X1), and the higher the pick-up of the self-curing support sheet of the workpiece. On the other hand, the total number of moles of the aforementioned unsaturated groups in the unsaturated compound, relative to the total number of moles of the aforementioned functional groups in the non-linearly curable acrylic resin, is preferably 1 times or less. The adhesive layer and the adhesive composition (I) may contain only one type of energy-curing acrylic resin (Ia) or two or more types. In the case of two or more types, the combination and ratio of these energy-curing acrylic resins (Ia) can be arbitrarily selected. When the adhesive layer and adhesive composition (I) contain a line-curing acrylic resin (Ia), the content of the line-curing compound (α) in the adhesive layer relative to the total mass of the adhesive layer is preferably 5% to 50% by mass, for example, it can be any one of 5% to 35% by mass, or 5% to 25% by mass, or any one of 10% to 50% by mass, or 14% to 50% by mass, or 10% to 35% by mass. By setting the aforementioned ratio to the lower limit or above, the properties of the adhesive layer (e.g., the embedding properties of the adhesive layer into the matte surface of the substrate) can be improved. By setting the aforementioned ratio to the upper limit or below, the pick-up performance of the workpiece from the support sheet without abnormalities can be improved. When the adhesive layer and adhesive composition (I) contain energy-curing acrylic resin (Ia), the content of energy-curing acrylic resin (Ia) in the adhesive layer relative to the total mass of the adhesive layer is preferably 50% to 95% by mass, for example, it can be any one of 65% to 95% by mass and 75% to 95% by mass, or any one of 50% to 90% by mass and 50% to 86% by mass, or 65% to 90% by mass. By setting the aforementioned ratio to the lower limit or above, the pick-up performance of the workpiece from the support sheet without abnormalities can be improved. By setting the aforementioned ratio to the upper limit or below, the properties of the adhesive layer (e.g., the embedding performance of the adhesive layer into the matte surface of the substrate) can be improved. [Other Components] The adhesive layer and adhesive composition (I) may also contain other components that are not equivalent to either the energy line curing compound (α) or the energy line curing acrylic resin (Ia), to the extent that the effects of the present invention are not impaired. Examples of such other components include crosslinking agents (β), photopolymerization initiators (γ), and additives. The adhesive layer and the adhesive composition (I) may contain only one or more of the aforementioned other components. In the case of two or more components, the combination and ratio of these aforementioned other components may be arbitrarily selected. [Crosslinking agent (β)] When preparing the energy line curable acrylic resin (Ia), if the aforementioned functional group, which is a non-energy line curable acrylic resin, has a residual functional group that has not reacted with the aforementioned unsaturated compound, the energy line curable acrylic resin (Ia) possesses such a functional group. When using this energy line curable acrylic resin (Ia), the adhesive layer and the adhesive composition (I) may further contain a crosslinking agent (β). In the adhesive layer and the adhesive composition (I) containing the aforementioned crosslinking agent (β), the energy line curable acrylic resin (Ia) can crosslink with each other. Examples of crosslinking agents (β) include: isocyanate-based crosslinking agents (crosslinking agents with isocyanate groups) such as toluene diisocyanate, hexamethylene diisocyanate, phenyl diisocyanate, and adducts of these diisocyanates; epoxy-based crosslinking agents (crosslinking agents with glycidyl groups) such as ethylene glycol glycidyl ether; aziridine-based crosslinking agents (crosslinking agents with aziridine groups) such as hexa[1-(2-methyl)-aziridinyl]triphosphatidyltriazine; metal chelate-based crosslinking agents (crosslinking agents with metal chelate structures) such as aluminum chelates; and isocyanurate-based crosslinking agents (crosslinking agents with isocyanuric acid skeletons). Among these, from the viewpoint that it is easier to make the adhesion (X1) fall within the scope described later, crosslinking agent (β) is preferably an adduct of hexamethylene diisocyanate. The adhesive layer and the crosslinking agent (β) contained in the adhesive composition (I) may be only one type or two or more types. In the case of two or more types, the combination and ratio of these crosslinking agents (β) can be arbitrarily selected. In the adhesive layer, relative to 100 parts by weight of the energy line curable acrylic resin (Ia), the content of the crosslinking agent (β) is preferably 0.1 to 7 parts by weight, for example, any one of 0.1 to 5 parts by weight, 0.1 to 3 parts by weight, 0.5 to 7 parts by weight, 1 to 7 parts by weight, 3 to 7 parts by weight, or any one of 0.5 to 5 parts by weight, 1 to 3 parts by weight. By using this range of crosslinking agent (β) content, it is easy to adjust both the adhesion (X1) and the adhesion (Y2). [Photopolymerization initiator (γ)] The adhesive layer and adhesive composition (I) may also contain a photopolymerization initiator (γ). The adhesive layer and adhesive composition (I) containing the photopolymerization initiator (γ) can undergo a sufficient curing reaction even when irradiated with relatively low-energy energy lines such as ultraviolet light. Examples of photopolymerization initiators (γ) mentioned above include: benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, methyl benzoate, benzoin dimethyl ketal, and other benzoin compounds; acetophenone, 2-hydroxy-2-methyl-1-phenyl-propane-1-one, 2,2-dimethoxy-1,2-diphenylethane-1-one, 2-hydroxy-1-(4-(4-(2-hydroxy-2-methylpropane)benzyl)phenyl)-2-methylpropane-1-one, and other acetophenone compounds; bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, Acrylphosphine oxide compounds such as 2,4,6-trimethylbenzyldiphenylphosphine oxide; sulfide compounds such as benzylphenyl sulfide and tetramethylthiuram monosulfide; α-keto alcohol compounds such as 1-hydroxycyclohexylphenyl ketone; azo compounds such as azobisisobutyronitrile; titanium eccentricate compounds such as titanium eccentricate; thioxanthone compounds such as thioxanthone; peroxide compounds; diacetylene and other diketone compounds; benzohexyphenidate; dibenzohexyphenidate; benzophenone; 2,4-diethylthioxanthone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone; quinone compounds such as 1-chloroanthraquinone and 2-chloroanthraquinone. As photopolymerization initiators (γ), photosensitizers such as amines can be used, for example. Among these, from the viewpoint that adhesion (X1) can be more easily included in the scope described later, the photopolymerization initiator (γ) is preferably 2-hydroxy-1-(4-(4-(2-hydroxy-2-methylpropionic acid)benzyl)phenyl)-2-methylpropane-1-one. The adhesive layer and the adhesive composition (I) may contain only one type of photopolymerization initiator (γ) or two or more types. In the case of two or more types, the combination and ratio of these photopolymerization initiators (γ) can be arbitrarily selected. In the adhesive layer, regardless of whether the adhesive layer contains energy line curing acrylic resin (Ia), the content of photopolymerization initiator (γ) is preferably 0.5 to 5 parts by mass relative to the total content of energy line curing compound (α) and energy line curing acrylic resin (Ia) of 100 parts by mass, for example, it can also be any one of 1 to 4 parts by mass and 1.5 to 3.5 parts by mass. [Additives] Examples of the aforementioned additives include, for example, antistatic agents, antioxidants, softeners (plasticizers), fillers, rust inhibitors, colorants (pigments, dyes), sensitizers, adhesion promoters, reaction delayers, and crosslinking promoters (catalysts). The aforementioned reaction delayer, for example, refers to a component that inhibits the crosslinking reaction outside the target in the adhesive composition (I) caused by the action of a catalyst mixed into it. Examples of reaction delayers include components that form chelate complexes by chelating the catalyst; more specifically, components having two or more carbonyl groups (-C(=O)-) in one molecule. The adhesive layer and adhesive composition (I) may contain only one type of additive or two or more types of additives. In the case of two or more types, the combination and ratio of these additives may be arbitrarily selected. There is no particular limitation on the content of additives in adhesive composition (I), and they can be selected appropriately according to the types of additives mentioned above. [Soluble] Adhesive composition (I) may also contain a solvent. By containing a solvent, adhesive composition (I) improves its applicability to the target surface. The aforementioned solvent is preferably an organic solvent. Examples of such organic solvents include: ketones such as methyl ethyl ketone and acetone; esters (carboxylic acid esters) such as ethyl acetate; ethers such as tetrahydrofuran and dioxane; aliphatic hydrocarbons such as cyclohexane and n-hexane; aromatic hydrocarbons such as toluene and xylene; and alcohols such as 1-propanol and 2-propanol. The adhesive composition (I) may contain only one type of solvent or two or more types of solvents. In the case of two or more types of solvents, the combination and ratio of these solvents can be arbitrarily selected. There is no particular limitation on the content of solvent in the adhesive composition (I), which can be adjusted appropriately. [One embodiment of the adhesive layer] As an example of a preferred adhesive layer and adhesive composition (I), an adhesive layer and adhesive composition (I) containing an energy line curing compound (α), an energy line curing acrylic resin (Ia), a crosslinking agent (β) and a photopolymerization initiator (γ) can be cited. [Manufacturing Method of Adhesive Composition (I)] Adhesive composition (I) is obtained by formulating various components, such as a line-curing compound (α) and, if necessary, a line-curing acrylic resin (Ia), to constitute adhesive composition (I). There is no particular limitation on the order of addition of the components, and two or more components may be added simultaneously. There is no particular limitation on the method of mixing the components during formulation; any suitable method may be selected from the following known methods: mixing by rotating a stir bar or stirring blade; mixing using a mixer; mixing by applying ultrasonic waves, etc. Regarding the temperature and time for adding and mixing the components, there are no particular limitations as long as the formulation components do not deteriorate; appropriate adjustments may be made, with a preferred temperature of 15°C to 30°C. [Substrate] The aforementioned substrate is in sheet or film form, and various resins can be listed as constituent materials of the aforementioned substrate. Examples of such resins include: polyethylene such as low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), and high-density polyethylene (HDPE); polyolefins other than polyethylene such as polypropylene, polybutene, polybutadiene, polymethylpentene, and norbornene resins; ethylene-based copolymers (copolymers obtained using ethylene as a monomer) such as ethylene-vinyl acetate copolymer, ethylene-(meth)acrylate copolymer, ethylene-(meth)acrylate copolymer, and ethylene-norbornene copolymer; vinyl chloride-based resins (resins obtained using vinyl chloride as a monomer) such as polyvinyl chloride and vinyl chloride copolymer; polystyrene... Ethylene; polycyclic olefins; polyesters such as polyethylene terephthalate, polyethylene naphthalate, polyethylene terephthalate, polyethylene isophthalate, polyethylene 2,6-naphthalate, and fully aromatic polyesters whose constituent units all have aromatic cyclic groups; copolymers of two or more of the aforementioned polyesters; poly(meth)acrylates; polyurethane; polyurethane acrylates; polyimide; polyamide; polycarbonate; fluoropolymers; polyacetals; modified polyphenylene ether; polyphenylene sulfide; polyurethane; polyetherketone, etc. As for the aforementioned resins, polymer alloys such as mixtures of the aforementioned polyesters and resins other than the aforementioned polyesters may also be listed. Preferably, in polymer alloys of the aforementioned polyesters and resins other than the aforementioned polyesters, the amount of the resins other than the polyesters is relatively small. Examples of the aforementioned resins include: cross-linked resins formed by cross-linking one or more of the resins mentioned above; and modified resins such as ionomers made by using one or more of the resins mentioned above. Of the above, the resins used as the constituent materials of the substrate are preferably polypropylene or polybutylene terephthalate, from the viewpoint that the substrate has higher heat resistance and flexibility at high temperatures (around 135°C). The resin constituting the substrate may be of only one type or of two or more types. In the case of two or more types, the combination and ratio of these resins can be arbitrarily selected. In addition to the aforementioned main constituent materials such as resin, the substrate may also contain various known additives such as fillers, colorants, antioxidants, organic lubricants, catalysts, and softeners (plasticizers). In the aforementioned support sheet, the adhesive layer is energy line hardening, therefore the substrate is preferably energy line permeable and preferably transparent. In the substrate, it is preferable that at least one side is a matte surface, or both sides may be matte surfaces, or one side may be a matte surface and the other side may be a glossy surface with low unevenness. In the aforementioned support sheet, an adhesive layer may also be provided on the matte surface of the substrate. Furthermore, when both sides of the substrate are matte surfaces, an adhesive layer may also be provided on the matte surface with a large surface roughness (Ra). The matte surface of a substrate is a surface in the substrate with a roughness value of a certain value or higher. Due to its low gloss, it can be clearly identified by its appearance. Substrates with at least one side being matte are available as commercially available products and can also be manufactured using known methods. The surface roughness (Ra) of the matte surface of the substrate is preferably 0.05 μm or more, for example, it can be any one of 0.1 μm or more, 0.4 μm or more, and 0.7 μm or more. By having the aforementioned surface roughness at or above the aforementioned lower limit value, when the composition of the adhesive layer is adjusted and the adhesive layer is provided on the matte surface of the substrate, the effect of high embedding of the adhesive layer into the matte surface of the substrate can be obtained more significantly. In addition, the adhesion of the substrates when they are stacked and stored is more easily suppressed. There is no particular limitation on the upper limit value of the surface roughness (Ra) of the matte surface of the substrate. For example, in terms of not having excessive surface unevenness, the aforementioned surface roughness is preferably 2 μm or less. The surface roughness (Ra) of the matte surface of the substrate can be, for example, any one of 0.05 μm to 2 μm, 0.1 μm to 2 μm, 0.4 μm to 2 μm, and 0.7 μm to 2 μm. However, these are examples of the aforementioned surface roughness. In this specification, the term "surface roughness (Ra)" is not limited to the matte surface of the substrate, but refers to the so-called arithmetic mean roughness calculated according to JIS B0601:2001. The surface roughness (Ra) of the glossy surface of the substrate is preferably less than 0.05 μm, for example, it can be less than 0.04 μm. With the aforementioned surface roughness within this range, the average light transmittance of the support sheet described later becomes higher in the wavelength region of 400 nm to 800 nm. There is no particular limitation on the lower limit of the surface roughness (Ra) of the glossy surface of the substrate. For example, in terms of suppressing adhesion of the substrates when they are stacked and stored, the aforementioned surface roughness is preferably 0.01 μm or more. The surface roughness (Ra) of the glossy surface of the substrate can be, for example, any one of 0.01 μm or more to less than 0.05 μm, or 0.01 μm to 0.04 μm. However, these are just examples of the aforementioned surface roughness. The surface roughness (Ra) of both sides of the substrate can be adjusted, for example, by means of the substrate forming conditions or surface treatment conditions. Here, as a surface treatment, examples include: roughening treatment using sandblasting, solvent treatment, etc., and smoothing treatment using grinding, etc. To adjust the adhesion between the substrate and the adhesive layer disposed on the substrate, the substrate surface can also be subjected to oxidation treatments such as corona discharge treatment, electron beam irradiation treatment, plasma treatment, ozone / ultraviolet irradiation treatment, flame treatment, chromic acid treatment, and hot air treatment; oleophilic treatment; hydrophilic treatment, etc. A primer treatment can also be applied to the substrate surface. The substrate can consist of one layer (single layer) or multiple layers (two or more). When it consists of multiple layers, these multiple layers can be the same or different from each other, and there are no particular restrictions on the combination of these multiple layers. The thickness of the substrate is preferably between 50 μm and 300 μm, more preferably between 60 μm and 100 μm. By using a substrate thickness within this range, the heat resistance (e.g., around 135°C), flexibility, and workpiece adhesion of the aforementioned support sheet are further improved. Here, "substrate thickness" refers to the overall thickness of the substrate; for example, the thickness of a substrate composed of multiple layers refers to the total thickness of all the layers constituting the substrate. The substrate can be manufactured using known methods. For example, a resin-containing substrate can be manufactured by molding a resin composition containing the aforementioned resin. [Release Film] The aforementioned release film can be any known release film. More specifically, a release film may be described as having one or both sides of the release film substrate as release treatment surfaces. The aforementioned release film substrate is preferably made of polyethylene terephthalate. The aforementioned release treatment surfaces can be formed by peeling the surface of the release film substrate using a known release agent. The thickness of the release film can be, for example, from 2 μm to 300 μm, preferably from 20 μm to 100 μm. Next, the physical properties of the aforementioned support sheet (adhesive layer) will be explained. [Adhesion (X1)] The aforementioned adhesion (X1) is 400 mN / 25 mm or less, preferably 340 mN / 25 mm or less, and for example, any one of 280 mN / 25 mm or less, 220 mN / 25 mm or less, and 180 mN / 25 mm or less. The smaller the adhesion (X1), the higher the pick-up capability of the workpiece being processed and the self-hardening support sheet being picked up without abnormality. There is no particular limitation on the lower limit of adhesion (X1). For example, an adhesive layer with an adhesion (X1) of 30 mN / 25 mm or more can be formed more easily. The adhesive force (X1) can be, for example, any one of the following: 30 mN / 25 mm to 400 mN / 25 mm, 30 mN / 25 mm to 340 mN / 25 mm, 30 mN / 25 mm to 280 mN / 25 mm, 30 mN / 25 mm to 220 mN / 25 mm, and below 30 mN / 25 mm to 180 mN / 25 mm. However, these are only examples of adhesive forces (X1). Adhesion (X1) can be measured, for example, by the method shown below. First, a 25mm wide sample is cut from a support sheet. Then, the sample (support sheet) is attached to the mirror surface of a silicon mirror wafer using an adhesive layer, thereby creating a silicon mirror wafer with the sample. This attachment is preferably performed at room temperature, preferably using a laminating roller with an attachment speed of 290mm / min to 310mm / min and an attachment pressure of 0.3MPa. Next, the resulting silicon mirror wafer with the sample is heated to 130°C for 2 hours. Then, the silicon mirror wafer with the sample is cooled to 23°C by allowing it to cool, and then subjected to an illumination of 230mW / cm². 2 Light intensity 200mJ / cm 2 Under these conditions, the adhesive layer in the cooled silicon mirror wafer containing the sample was irradiated with energy lines through the substrate, thereby hardening the adhesive layer in the sample. Then, at room temperature, the sample was peeled off from the silicon mirror wafer at a peeling speed of 300 mm / min. At this point, a so-called 180° peel was performed, that is, the sample was peeled off along its length at an angle of 180° between the surface of the silicon mirror wafer to which the sample was originally attached and the surface of the sample to which the silicon mirror wafer was originally attached. The load (peeling force) during this 180° peel was then measured over a length of 50 mm. The measured values ​​corresponding to the first and last 5 mm of the measured length were excluded from the effective values. The average value of these measured values ​​was used as the adhesion force (X1) (mN / 25 mm). In this embodiment, the peel force can also be measured on two or more test pieces (support pieces), and the average value of the multiple measured values ​​is used as the adhesion force (X1). [Adhesion (X2)] The aforementioned support sheet is attached to the mirror surface of a silicon mirror wafer using the aforementioned adhesive layer. After attachment, the aforementioned adhesive layer is heated to 130°C. The adhesion (X2) between the aforementioned adhesive layer and the aforementioned silicon mirror wafer after heating is measured (in this specification, it is sometimes simply referred to as "adhesion (X2)"). The aforementioned adhesion (X2) is preferably 13000mN / 25mm or more. By using this type of support sheet, even when the support sheet with a workpiece or workpiece attached is heated to a high temperature, even when a large force is applied to the workpiece due to workpiece processing or washing, the peeling of the workpiece from the support sheet is suppressed. The aforementioned adhesion (X2) is preferably 14000 mN / 25 mm or higher, for example, any one of 14700 mN / 25 mm or higher, 15400 mN / 25 mm or higher, and 16100 mN / 25 mm or higher. The greater the adhesion (X2), the better the effect of suppressing the peeling of the workpiece from the support sheet. There is no particular upper limit to the adhesion (X2). For example, an adhesive layer with an adhesion (X2) of 19000 mN / 25 mm or lower can be formed more easily. The adhesive force (X2) can be, for example, any one of 13000mN / 25mm to 19000mN / 25mm, 14000mN / 25mm to 19000mN / 25mm, 14700mN / 25mm to 19000mN / 25mm, 15400mN / 25mm to 19000mN / 25mm, and 16100mN / 25mm to 19000mN / 25mm. However, these are only examples of adhesive forces (X2). Adhesion (X2) can be measured, for example, using the method described below. Specifically, using the same method as for measuring adhesion (X1), a silicon mirror wafer with a sample is prepared, heated to 130°C for 2 hours, and then cooled to 23°C. Next, at 23°C, the sample is peeled off from the cooled silicon mirror wafer at a peeling speed of 300 mm / min. Then, a so-called 180° peel is performed, that is, the sample is peeled along its length at an angle of 180° between the surface of the silicon mirror wafer to which the sample was originally attached and the surface of the sample to which the silicon mirror wafer was originally attached. The load (peeling force) during this 180° peel is then measured over a length of 50 mm. The measured values ​​corresponding to the first 5 mm and the last 5 mm are excluded from the valid values. Furthermore, the average value of the measured values ​​is used as the adhesive force (X2) (mN / 25mm). In this embodiment, this peel force can also be measured on two or more test pieces (support pieces), and the average value of the obtained multiple measured values ​​is used as the adhesive force (X2). [Adhesion (Y1)] The aforementioned support sheet is attached to the surface of a stainless steel (SUS) plate using the aforementioned adhesive layer. The adhesive layer is then heated to 130°C to induce energy line hardening. The adhesion (Y1) between the energy line hardened adhesive layer and the stainless steel plate is measured (hereinafter referred to as "adhesion (Y1)"). Preferably, the adhesion (Y1) is 300 mN / 25 mm or higher. In the workpiece manufacturing method described later, a workpiece having a workpiece and a support sheet disposed on the workpiece is fixed to an annular frame. Then, in this state, a workpiece is manufactured from the workpiece, and the adhesive layer in the support sheet becomes an energy line hardened material, thereby becoming a hardened support sheet. That is, after the adhesive layer is hardened by energy lines, a workpiece with a support sheet is obtained from the workpiece: a workpiece having a workpiece and a hardened support sheet disposed on the aforementioned workpiece; and a workpiece having a workpiece being machined and a hardened support sheet disposed on the aforementioned workpiece being machined. Thus, after the adhesive layer is hardened by energy lines, the workpiece or workpiece being machined and the laminate of the hardened support sheet are fixed to the annular frame. Subsequently, by using the aforementioned support sheet with an adhesive strength (Y1) of 300mN / 25mm or more, even if the workpiece with the support sheet is further heated while fixed to the annular frame, and then energy lines are irradiated on the contact portion between the support sheet (adhesive layer) and the annular frame, the peeling of the aforementioned workpiece or workpiece being machined and the laminate of the hardened support sheet from the annular frame is also suppressed. The aforementioned adhesion (Y1) is preferably 400 mN / 25 mm or higher, for example, it can be any one of 500 mN / 25 mm or higher, or 600 mN / 25 mm or higher. The greater the adhesion (Y1), the better the effect of suppressing the peeling of the workpiece or workpiece-processed material from the hardened support sheet from the annular frame becomes. There is no particular upper limit to the adhesion (Y1). For example, an adhesive layer with an adhesion (Y1) of 2000 mN / 25 mm or lower can be more easily formed. The adhesion (Y1) can be any one of 300 mN / 25 mm to 2000 mN / 25 mm, 400 mN / 25 mm to 2000 mN / 25 mm, 500 mN / 25 mm to 2000 mN / 25 mm, or 600 mN / 25 mm to 2000 mN / 25 mm. However, this is just one example of the adhesion (Y1) of these systems. Adhesion (Y1) can be measured, for example, by the method shown below. First, a 25 mm wide specimen is cut from a support sheet. Then, this specimen (support sheet) is attached to one side of a 1000 μm thick SUS plate using an adhesive layer, thereby creating an SUS plate with the specimen. This attachment is preferably performed at room temperature, preferably using a laminating roller with an attachment speed of 290 mm / min to 310 mm / min and an attachment pressure of 0.3 MPa. Next, the resulting SUS plate with the specimen is heated at 130°C for 2 hours. Then, the SUS plate with the specimen is allowed to cool to 23°C before being heated under an illuminance of 230 mW / cm². 2 Light intensity 200mJ / cm 2 Under certain conditions, the adhesive layer in the cooled SUS plate containing the test piece was irradiated with energy rays through the substrate to harden the adhesive layer in the test piece. Then, at room temperature, the test piece was peeled from the SUS plate at a peel speed of 300 mm / min. At this point, a so-called 180° peel was performed, that is, the test piece was peeled along its length at an angle of 180° between the surface of the SUS plate to which the test piece was originally attached and the surface of the test piece to which the SUS plate was originally attached. The load (peel force) during this 180° peel was then measured over a length of 50 mm. The measured values ​​corresponding to the first 5 mm and the last 5 mm were excluded from the valid values. The average value of these measured values ​​was then used as the adhesive force (Y1) (mN / 25 mm). In this embodiment, the peel force can also be measured on two or more test pieces (support pieces), and the average value of the obtained multiple measured values ​​is used as the adhesion force (Y1). [Adhesion (Y2)] The aforementioned support sheet was attached to the surface of a stainless steel (SUS) plate using the aforementioned adhesive layer. After attachment, the adhesive layer was heated to 130°C. When the adhesion (Y2) between the adhesive layer and the stainless steel plate was measured after heating, the adhesion (Y2) was 13000 mN / 25 mm or more. By using this support sheet, in the workpiece manufacturing method described later, even if the workpiece with the support sheet or the workpiece with the support sheet and the workpiece with the support sheet are fixed in an annular frame and further heated, peeling of the workpiece with the support sheet or the workpiece with the support sheet from the annular frame is suppressed. The aforementioned adhesion (Y2) is preferably 14000 mN / 25 mm or higher, for example, any one of 15000 mN / 25 mm or higher, 16000 mN / 25 mm or higher, and 17000 mN / 25 mm or higher. The greater the adhesion (Y2), the better the effect of suppressing the peeling of the workpiece with the support plate or the processed workpiece with the support plate from the annular frame becomes. There is no particular upper limit to the adhesion (Y2). For example, an adhesive layer with an adhesion (Y2) of 20000 mN / 25 mm or lower can be formed more easily. The adhesive force (Y2) can be, for example, any one of 13000mN / 25mm to 20000mN / 25mm, 14000mN / 25mm to 20000mN / 25mm, 15000mN / 25mm to 20000mN / 25mm, 16000mN / 25mm to 20000mN / 25mm, and 17000mN / 25mm to 20000mN / 25mm. However, these are only examples of adhesive forces (Y2). Adhesion (Y2) can be measured, for example, using the method described below. Specifically, an SUS plate with a test piece is prepared using the same method as for measuring adhesion (Y1). After heating at 130°C for 2 hours, the SUS plate with the test piece is cooled to 23°C. Then, at 23°C, the test piece is peeled from the cooled SUS plate at a peel speed of 300 mm / min. A so-called 180° peel is then performed, meaning the test piece is peeled along its length at a 180° angle between the surface of the SUS plate to which the test piece was originally attached and the surface of the test piece to which the SUS plate was originally attached. The load (peel force) during this 180° peel is then measured over a length of 50 mm. The values ​​corresponding to the first and last 5 mm of the measured length are excluded from the valid values. The average value of the measured values ​​is then used as the adhesion (Y2) (mN / 25 mm). In this embodiment, the peel force can also be measured on two or more test pieces (support pieces), and the average value of the obtained multiple measurements is used as the adhesion force (Y2). [Adhesion (X0)] The aforementioned support sheet is attached to the mirror surface of the silicon mirror wafer using the aforementioned adhesive layer. The silicon mirror wafer with the aforementioned support sheet is then stored at a temperature of 23°C for 30 minutes. The adhesion (X0) between the aforementioned adhesive layer and the aforementioned silicon mirror wafer (sometimes referred to as "adhesion (X0)" in this specification) is measured. The aforementioned adhesion (X0) is preferably 2000mN / 25mm or higher. By using this type of support sheet, even when the workpiece or workpiece is attached to the support sheet, greater force is applied to the workpiece under heavy load processing (e.g., high-speed cutting of semiconductor wafers) or heavy load washing of the workpiece (e.g., high-pressure washing of diced semiconductor wafers), and the workpiece is subjected to high water pressure, the peeling of the workpiece from the support sheet is suppressed. The aforementioned adhesion (X0) is preferably 2500 mN / 25 mm or more, for example, any one of 3000 mN / 25 mm or more, 3500 mN / 25 mm or more, and 4000 mN / 25 mm or more. The greater the adhesion (X0), the better the effect of suppressing the peeling of the workpiece from the support sheet. There is no particular upper limit to the adhesion (X0). For example, from the viewpoint of considering both adhesion (X0) and other physical properties of the adhesive layer, adhesion (X0) is preferably 6000 mN / 25 mm or less. The adhesive force (X0) can also be any one of 2000mN / 25mm to 6000mN / 25mm, 2500mN / 25mm to 6000mN / 25mm, 3000mN / 25mm to 6000mN / 25mm, 3500mN / 25mm to 6000mN / 25mm, and 4000mN / 25mm to 6000mN / 25mm. However, these are only examples of adhesive forces (X0). Adhesion (X0) can be measured, for example, using the method described below. First, a 25mm wide sample is cut from a support sheet. Then, the sample (support sheet) is attached to the mirror surface of a silicon mirror wafer using an adhesive layer, thereby creating a silicon mirror wafer with the sample. This attachment is preferably performed at room temperature, preferably using a laminating roller with an attachment speed of 290 mm / min to 310 mm / min and an attachment pressure of 0.3 MPa. Next, the silicon mirror wafer with the sample is placed at 23°C for 30 minutes. Then, at room temperature, the sample is peeled off from the silicon mirror wafer at a peeling speed of 300 mm / min. At this point, a so-called 180° peel is performed, that is, the sample is peeled off along its length at a 180° angle between the surface of the silicon mirror wafer to which the sample was originally attached and the surface of the sample to which the silicon mirror wafer was originally attached. Then, the load (peel force) during this 180° peel is measured, with the measurement length set at 50 mm. The measured values ​​corresponding to the initial 5 mm length and the final 5 mm length are excluded from the valid values. The average value of these measured values ​​is used as the adhesion force (X0) (mN / 25 mm). In this embodiment, this peel force measurement can also be performed on two or more sample pieces (support sheets), and the average value of the obtained multiple measured values ​​is used as the adhesion force (X0). [Methods for Adjusting the Adhesion Strength of the Adhesive Layer] The various adhesion forces of the adhesive layer mentioned above, namely the adhesion force between the heat-cured adhesive layer and the silicon mirror wafer (X1); the adhesion force between the heat-cured adhesive layer and the silicon mirror wafer (X2); the adhesion force between the heat-cured adhesive layer and the SUS board (Y1); the adhesion force between the heat-cured adhesive layer and the SUS board (Y2); and the adhesion force between the adhesive layer and the silicon mirror wafer (X0), can all be adjusted by adjusting the types and contents of the components contained in the adhesive layer. For example, by including an energy-line curable acrylic resin (Ia) having constituent units derived from functionalized monomers having methacrylic groups in the adhesive layer, adhesion (X1) can be reduced. For example, by including an energy-line curable acrylic resin (Ia) with a relatively high glass transition temperature in the adhesive layer, adhesion (X1) can be reduced. For example, when reacting a functional group (e.g., hydroxyl group) in the aforementioned acrylic polymer with a group in the aforementioned unsaturated compound that can bond to the aforementioned functional group (e.g., isocyanate group in isocyanate (meth)acrylic oxyethyl ester), the energy-line curable acrylic resin (Ia) is prepared by setting the total number of moles of the groups in the aforementioned unsaturated compound that can bond to the aforementioned functional group to a relatively large amount (e.g., more than 0.75 times) relative to the total number of moles of the aforementioned functional groups in the aforementioned acrylic polymer, and including this energy-line curable acrylic resin (Ia) in the adhesive layer, adhesion (X1) can be reduced. For example, by including a line-curing compound (α) in the adhesive layer, the adhesion (X2) can be improved compared to the case where the line-curing compound (α) is not present. However, by adjusting the type of line-curing compound (α), the adhesion (X2) can be further improved. For example, when using a line-curing acrylic resin (Ia) obtained by reacting the functional groups (e.g., hydroxyl groups) in the aforementioned acrylic polymer with the groups in the aforementioned unsaturated compound that can bond with the aforementioned functional groups (e.g., isocyanate groups in isocyanate (meth)acrylic acid ethyl ester), by including a line-curing acrylic resin (Ia) with fewer unreacted pre-existing functional groups derived from the aforementioned acrylic polymer (in other words, fewer pre-existing functional groups that can react with the crosslinking agent (β)) in the adhesive layer, the adhesion (X2) can be improved. For example, by reducing the content of the crosslinking agent (β) in the adhesive layer, the adhesion (X2) can be improved. For example, by including an adhesive layer containing a line-curing acrylic resin (Ia) having constituent units derived from a functionalized monomer having a methacrylic group, adhesion (Y1) can be improved. For example, by including an adhesive layer containing a (meth)acrylate having an oxygen atom (-O-) as a substituent as an line-curing compound (α), adhesion (Y1) can be improved. For example, when using a line-curing acrylic resin (Ia) obtained by reacting a functional group (e.g., hydroxyl group) in the aforementioned acrylic polymer with a group in the aforementioned unsaturated compound that can bond with the aforementioned functional group (e.g., an isocyanate group in isocyanate (meth)acrylic oxyethyl ester), adhesion (Y1) can be improved by including an adhesive layer containing a line-curing acrylic resin (Ia) with fewer unreacted pre-reacted functional groups derived from the aforementioned acrylic polymer (in other words, fewer pre-reacted functional groups that can react with the crosslinking agent (β)). For example, by reducing the content of crosslinking agent (β) in the adhesive layer, the adhesion (Y1) can be improved. For example, by including a line-curing compound (α) in the adhesive layer, the adhesion (Y2) can be improved compared to the case where the line-curing compound (α) is not present. However, by adjusting the type of line-curing compound (α), the adhesion (Y2) can be further improved. For example, when using a line-curing acrylic resin (Ia) obtained by reacting the functional groups (e.g., hydroxyl groups) in the aforementioned acrylic polymer with the groups in the aforementioned unsaturated compound that can bond with the aforementioned functional groups (e.g., isocyanate groups in isocyanate (meth)acrylic acid ethyl ester), by including a line-curing acrylic resin (Ia) with fewer unreacted pre-existing functional groups derived from the aforementioned acrylic polymer (in other words, fewer pre-existing functional groups that can react with the crosslinking agent (β)) in the adhesive layer, the adhesion (Y2) can be improved. For example, by reducing the content of the crosslinking agent (β) in the adhesive layer, the adhesion (Y2) can be improved. For example, when using a line-curing acrylic resin (Ia) obtained by reacting the functional groups (e.g., hydroxyl groups) in the aforementioned acrylic polymer with groups in the aforementioned unsaturated compound that can bond with the aforementioned functional groups (e.g., isocyanate groups in isocyanate (meth)acrylic acid oxyethyl ester), the adhesion (X0) can be improved by including the adhesive layer in a line-curing acrylic resin (Ia) with fewer unreacted previously mentioned functional groups derived from the aforementioned acrylic polymer (in other words, fewer previously mentioned functional groups that can react with the crosslinking agent (β)). For example, the adhesion (X0) can be improved by reducing the content of the crosslinking agent (β) in the adhesive layer. For example, in an adhesive layer containing a line-curing compound (α), a line-curing acrylic resin (Ia), and a crosslinking agent (β), using a chain-like crosslinking agent without a ring structure as the crosslinking agent (β) tends to increase adhesion (Y2) and decrease adhesion (X1) compared to using a crosslinking agent with a ring structure. Similarly, in an adhesive layer containing a line-curing compound (α), a line-curing acrylic resin (Ia), and a crosslinking agent (β), using a crosslinking agent with urethane bonds, such as a trimethylolpropane adduct of diisocyanate, as the crosslinking agent (β), tends to increase adhesion (Y2) and decrease adhesion (X1) compared to using a crosslinking agent without urethane bonds. For example, in an adhesive layer containing a line-curing compound (α), a line-curing acrylic resin (Ia), and a crosslinking agent (β), by reducing the content of the line-curing compound (α), the adhesion (X1) can be reduced compared to the case where the content is increased. [Average value of light transmittance (400nm to 800nm) of the support sheet] The average value of the light transmittance (400nm to 800nm) of the aforementioned support sheet is preferably 80% or higher, and for example, it can also be any one of 82% or higher, or 84% or higher. By ensuring that the average value of the aforementioned light transmittance (400nm to 800nm) is above the aforementioned lower limit, the inspection accuracy is improved when inspecting the workpiece for cracks or defects (e.g., fragments) through the support sheet while the workpiece is held on the support sheet. There is no particular limitation on the upper limit of the aforementioned average value of light transmittance (400nm to 800nm). For example, support sheets with an average value of 95% or lower of the aforementioned light transmittance (400nm to 800nm) can be manufactured more easily. The average value of the aforementioned light transmittance (400nm to 800nm) can also be, for example, any one of 80% to 95%, 82% to 95%, or 84% to 95%. However, these are just examples of the average values ​​of the aforementioned light transmittance (400nm to 800nm). In this specification, unless otherwise specified, the light transmittance of the support sheet is not limited to the light transmittance in the wavelength region of 400nm to 800nm, but refers to the light transmittance of the support sheet without the release film. The average light transmittance (400 nm to 800 nm) of the aforementioned support sheet can be calculated, for example, by the following method. That is, for the support sheet, the light transmittance is measured by directly receiving external illumination from the substrate side of the support sheet without using an integrating sphere. The light transmittance value T is measured every 1 nm in the wavelength range of 400 nm to 800 nm when the wavelength is n (nm). n(Where n is an integer from 400 to 800). Then, sum all T values ​​when n is between 400 and 800. n Calculate the total value T 400 － 800 By obtaining T 400 － 800 With T n Divide the number of measurements (i.e., 800 - 400 + 1 = 401) by (T) 400 － 800 / 401), which can calculate the average light transmittance of the support sheet (400nm to 800nm). The average light transmittance (400nm to 800nm) of the aforementioned support sheet can be adjusted, for example, by adjusting the type and content of the components contained in the substrate, and the roughness of both sides of the substrate (e.g., surface roughness (Ra)). In addition, the average light transmittance (400nm to 800nm) of the aforementioned support sheet can also be adjusted by adjusting the type and content of the components contained in the adhesive layer. [Example of a support sheet] Preferably, the aforementioned support sheet is selected from one or more of the group consisting of adhesive force (X2), adhesive force (Y1), and adhesive force (X0), in addition to adhesive force (Y2) and adhesive force (X1), and has any of the above numerical ranges. That is, as an example of a preferred support sheet, for example, a support sheet that satisfies the following conditions (1-1) and (1-2) and satisfies the requirement of selecting one or more of the group consisting of the following conditions (1-3) to (1-5): (1-1) The adhesive force (Y2) between the heated adhesive layer and the SUS plate is 13000mN / 25mm or more. (1-2) The adhesive force (X1) between the heat-cured adhesive layer and the silicon mirror wafer is 400mN / 25mm or less. (1-3) The adhesion (X2) between the heated adhesive layer and the silicon mirror wafer is 13000 mN / 25 mm or more. (1-4) The adhesion (Y1) between the heat-cured adhesive layer and the SUS plate is 300 mN / 25 mm or more. (1-5) The adhesion (X0) between the adhesive layer and the silicon mirror wafer is 2000 mN / 25 mm or more. As a preferred example of a support sheet, all support sheets that satisfy the aforementioned conditions (1-1) to (1-5) can be listed. Among the support sheets exemplified here, it is particularly preferred that one or more of the group consisting of adhesion (X1), adhesion (X2), adhesion (Y1), adhesion (Y2), and adhesion (X0) are further limited to any of the numerical ranges described above. [Other Examples of Support Sheets] As a preferred example of a support sheet, one example includes a substrate and an adhesive layer disposed on one side of the substrate; the adhesive layer is energy line hardening; the support sheet is attached to the surface of a stainless steel plate using the adhesive layer, and the adhesive layer is heated to 130°C after attachment. When the adhesion force (Y2) between the adhesive layer and the stainless steel plate after heating is measured, the adhesion force (Y2) is 13000mN / 25mm or more; the support sheet is attached to the mirror surface of a silicon mirror wafer using the adhesive layer, and the attached... The aforementioned adhesive layer was heated to 130°C, and then subjected to energy line curing. When the adhesion (X1) between the energy line-cured adhesive layer and the aforementioned silicon mirror wafer was measured, the adhesion (X1) was less than 400 mN / 25 mm. The aforementioned adhesive layer comprises an energy line-curing compound and an energy line-curing acrylic resin. The aforementioned energy line-curing compound may also be a (meth)acrylate with substituents. The aforementioned (meth)acrylate with substituents is a compound having the following structure: (meth)acrylate An acrylic ester in which one or more carbon atoms of the hydrocarbon group derived from an alcohol, together with the hydrogen atoms bonded to the aforementioned carbon atoms, are replaced by the aforementioned substituents (however, two adjacent carbon atoms are not replaced by the aforementioned substituents); the aforementioned energy line curing acrylic resin is a resin having the following structure: a non-energy line curing acrylic resin having the aforementioned functional groups from a (meth)acrylate alkyl ester and functionalized monomers, and having unsaturated groups containing groups capable of reacting with the aforementioned functional groups and energy line polymerizable unsaturated groups. The structure obtained by reacting the aforementioned compound; in the aforementioned (meth)acrylate alkyl ester, the alkyl group constituting the aforementioned alkyl ester has 1 to 20 carbon atoms; the aforementioned functional group-containing monomer system is selected from one or more of the group consisting of hydroxyl-containing monomers, carboxyl-containing monomers, amino-containing monomers, and epoxy-containing monomers; in the aforementioned unsaturated group-containing compound, the aforementioned energy-line polymerizable unsaturated group is (meth)acrylic, vinyl, or allyl; the group in the aforementioned unsaturated group-containing compound that can bond with the aforementioned functional group can be listed as isocyanate group, glycidyl group, hydroxyl, or amino group. In this support sheet, in the aforementioned adhesive layer, the ratio of the content of the aforementioned energy-line curing compound relative to the total mass of the aforementioned adhesive layer is preferably 5% to 50% by mass, as explained above; in the aforementioned adhesive layer, the ratio of the content of the aforementioned energy-line curing acrylic resin relative to the total mass of the aforementioned adhesive layer is preferably 50% to 95% by mass, as explained above. In the aforementioned adhesive layer containing the aforementioned energy-curing compound and energy-curing acrylic resin support sheet, the aforementioned adhesive layer preferably further contains a crosslinking agent (β), which is selected from one or more of the group consisting of isocyanate-based crosslinking agents, epoxy-based crosslinking agents, aziridine-based crosslinking agents, metal chelate-based crosslinking agents, and isocyanurate-based crosslinking agents. In the aforementioned adhesive layer containing the aforementioned crosslinking agent (β), as explained above, the content of the aforementioned crosslinking agent (β) is preferably 0.1 to 7 parts by mass relative to 100 parts by mass of the aforementioned energy-curing acrylic resin. In the aforementioned support sheet containing the aforementioned energy line curing compound and energy line curing acrylic resin in the aforementioned adhesive layer, it is preferable that the aforementioned adhesive layer is provided on the matte surface of the aforementioned substrate, and the surface roughness (Ra) of the aforementioned matte surface of the aforementioned substrate is 0.05 μm or more. ◇Manufacturing Method of the Support Sheet The aforementioned support sheet can be manufactured by laminating the layers constituting the support sheet in a corresponding positional relationship, and adjusting the shape of some or all of the layers as needed. The formation method of each layer is as described above. For example, the aforementioned adhesive composition (I) can be applied to one side of a substrate (e.g., a matte or glossy surface) and dried as needed, thereby manufacturing the support sheet. The support sheet can also be manufactured by applying an adhesive composition (I) to one side of the release film and drying it as needed, thereby pre-forming an adhesive layer on the release film, so that the exposed side of the adhesive layer adheres to one side of the substrate (e.g., a matte or glossy surface). In this case, the adhesive composition (I) is preferably applied to the release treatment surface of the release film. The pressure applied when bonding the adhesive layer to the substrate (adhesion pressure) is preferably between 0.2 MPa and 0.6 MPa. By applying a pressure above the aforementioned lower limit, the adhesion between the adhesive layer and the substrate is sufficiently strong. Furthermore, if the composition of the adhesive layer is adjusted to apply the adhesive layer to the matte surface of the substrate, the embedding of the adhesive layer into the matte surface of the substrate can be further improved. By applying a pressure below the aforementioned upper limit, excessive pressure can be avoided. This bonding of the adhesive layer to the substrate is preferably performed at a temperature of 15°C or higher, but it can also be performed at room temperature. The support sheet having the aforementioned other layers can be manufactured, for example, by applying the composition for forming the aforementioned other layers to appropriate portions of the substrate or adhesive layer, drying it as needed, thereby forming other layers, and then further laminating necessary layers as needed. Alternatively, it can be manufactured by laminating film-like other layers to appropriate portions of the substrate or adhesive layer, thereby setting other layers, and then further laminating necessary layers as needed. A protective film forming composite sheet can be constructed by laminating the aforementioned support sheet and a protective film together. That is, the protective film forming composite sheet includes: the aforementioned support sheet; and a protective film forming film disposed on the side of the aforementioned adhesive layer in the aforementioned support sheet opposite to the substrate side. More specifically, the protective film forming composite sheet includes: a substrate; an adhesive layer disposed on one side of the aforementioned substrate; and a protective film forming film disposed on the side of the aforementioned adhesive layer opposite to the substrate side. The protective film forming composite sheet may further include a release film disposed on the side of the protective film forming film opposite to the adhesive layer side. [Protective Film Forming Film] The aforementioned protective film forming film is a film used to form a protective film on any part of the aforementioned workpiece. By using the aforementioned protective film forming composite sheet, a workpiece having a protective film can be manufactured, comprising a workpiece and a protective film disposed on any part of the aforementioned workpiece. For example, when the workpiece is a wafer, by using the aforementioned protective film forming composite sheet, a wafer having a protective film can be manufactured, comprising a wafer and a protective film disposed on the inner surface of the wafer. The aforementioned protective film can be either hardenable or non-hardenable. That is, the aforementioned protective film can function as a protective film through hardening, or it can function as a protective film in an unhardened state. The hardenable protective film can be either thermosetting or energy-line hardening, or it can have the characteristics of both thermosetting and energy-line hardening. The protective film can consist of a single layer or multiple layers (two or more). When the protective film is composed of multiple layers, these multiple layers can be the same or different from each other, and there are no particular restrictions on the combination of these multiple layers. Examples of thermosetting protective film forming films include those containing a polymer component (A) and a thermosetting component (B). Examples of polymer component (A) include acrylic resins, urethane resins, phenoxy resins, polysiloxane resins, and saturated polyester resins. Examples of thermosetting component (B) include epoxy thermosetting resins, thermosetting polyimide resins, and unsaturated polyester resins. In this specification, the term "thermosetting polyimide resin" refers to the general term for polyimide precursors that form polyimide resins through thermosetting and thermosetting polyimides. The aforementioned epoxy thermosetting resin is composed of epoxy resin (B1) and a thermosetting agent (B2). In addition to these components, the thermosetting protective film may also contain one or more of the following: curing accelerator (C), filler (D), coupling agent (E), crosslinking agent (F), energy line curing resin (G), photopolymerization initiator (H), colorant (I), and general additive (J). As a protective film forming an energy line hardening agent, a film containing an energy line hardening component (a) can be cited as an example. Examples of energy line hardening components (a) include polymers (a1) having an energy line hardening group with a weight average molecular weight of 80,000 to 2,000,000, and compounds (a2) having an energy line hardening group with a molecular weight of 100 to 80,000. The energy-line curable protective film forming film preferably contains, in addition to the energy-line curable component (a), a polymer (b) that does not have energy-line curable groups. Examples of polymers (b) that do not have energy-line curable groups include acrylic resins, urethane resins, phenoxy resins, polysiloxane resins, and saturated polyester resins. In addition to the energy-line curable protective film forming film, the energy-line curable component (a) and the polymer (b) without the energy-line curable group may also contain one or more of the following: colorant, thermosetting component, thermosetting agent, filler, coupling agent, crosslinking agent, photopolymerization initiator and general additives. As a non-curing protective film forming film, for example, a film containing a polymer component can be listed. As the aforementioned polymer component, for example, a component that is the same as the non-curing resin such as polymer component (A) listed above as a component of a thermosetting protective film forming film can be listed. In addition to the aforementioned polymer components, the non-hardening protective film may also contain one or more of the following: colorants, fillers, coupling agents, crosslinking agents, and general additives. The thickness of the protective film is preferably between 1 μm and 100 μm. By ensuring the thickness of the protective film is above the aforementioned lower limit, a protective film with higher protective capabilities can be formed. By ensuring the thickness of the protective film is below the aforementioned upper limit, excessive thickness of the protective film can be avoided. Here, "thickness of the protective film" refers to the overall thickness of the protective film; for example, the thickness of a multi-layered protective film refers to the total thickness of all layers constituting the protective film. The protective film forming film can be formed using a protective film forming composition containing the constituent materials of the film (a thermosetting protective film forming composition for forming a thermosetting protective film forming film, an energy line curing protective film forming composition for forming an energy line curing protective film forming film, and a non-curing protective film forming composition for forming a non-curing protective film forming film). For example, the protective film forming film can be formed by applying the protective film forming composition to the surface to which the aforementioned protective film forming film is to be formed, and then drying it as needed. The ratio of the content of components in the protective film forming composition that do not vaporize at room temperature is generally the same as the ratio of the content of the aforementioned components in the protective film forming film. ◇Manufacturing Method of Composite Sheet for Protective Film Formation The aforementioned composite sheet for protective film formation can be manufactured by laminating the layers constituting the sheet in a corresponding positional relationship, adjusting the shape of some or all layers as needed. The formation method of each layer is as described above. For example, the composite sheet for protective film formation can be formed by applying a protective film forming composition to one side of the release film, drying it as needed, thereby pre-forming a protective film forming film on the release film, and then bonding the exposed surface of the protective film forming film (the side opposite to the release film side) to the exposed surface of the adhesive layer in the support sheet (the side opposite to the substrate side). Preferably, the protective film forming composition is applied to the release treatment surface of the release film. ◇Method for Manufacturing a Workpiece (Method for Using a Support Sheet) The aforementioned support sheet can be used to manufacture a workpiece. Specifically, a method for manufacturing a workpiece according to one embodiment of the present invention includes: an attachment step, in which the aforementioned adhesive layer of the support sheet is attached to a workpiece and an annular frame, thereby fixing a workpiece having the aforementioned workpiece and the aforementioned support sheet disposed on the aforementioned workpiece to the aforementioned annular frame; a heating step, after the aforementioned attachment step, heating the aforementioned adhesive layer of the support sheet fixed to the aforementioned annular frame; a processing step, after the aforementioned attachment step, processing the aforementioned workpiece fixed to the aforementioned annular frame and the aforementioned workpiece with the support sheet, thereby producing the aforementioned workpiece; a hardening step, after the aforementioned heating step and processing step, energy-line hardening of the adhesive layer attached to the aforementioned annular frame; and a pickup step, after the aforementioned hardening step, picking up the aforementioned workpiece by peeling it off from the hardened adhesive layer. A manufacturing method for a workpiece processed when the workpiece is a semiconductor wafer, i.e., a manufacturing method for a semiconductor wafer, may include the following steps: an attachment step, in which the adhesive layer in the aforementioned support sheet is attached to the semiconductor wafer and an annular frame, thereby fixing the semiconductor wafer with the aforementioned support sheet, which is formed by the aforementioned semiconductor wafer and the aforementioned support sheet disposed on the aforementioned semiconductor wafer, to the aforementioned annular frame; a heating step, after the aforementioned attachment step, heating the aforementioned adhesive layer in the aforementioned support sheet fixed to the aforementioned annular frame; a processing step, after the aforementioned attachment step, dividing the aforementioned semiconductor wafer fixed to the aforementioned annular frame and the aforementioned semiconductor wafer with the aforementioned support sheet, thereby fabricating the aforementioned semiconductor wafer; a curing step, after the aforementioned heating step and processing step, energy line curing of the adhesive layer attached to the aforementioned annular frame; and a pickup step, after the aforementioned curing step, picking up the aforementioned semiconductor wafer by peeling it off from the cured adhesive layer. Following the aforementioned attachment step, the order of the aforementioned heating and processing steps can be arbitrarily selected according to the purpose. For example, the heating step can be performed before the processing step, or the processing step can be performed before the heating step. For instance, in the aforementioned manufacturing method, a heating step can be performed to remove foreign matter such as low molecular weight resin components adhering to the surface of the workpiece through evaporation. In this case, the heating step can be performed at any point before or after the processing step. Furthermore, in the aforementioned manufacturing method, after removing fine foreign matter generated during workpiece cutting or other processing and adhering to the surface of the workpiece with water, a heating step can be performed to dry the workpiece. In this case, the heating step is performed after the processing step. Moreover, in the aforementioned manufacturing method, both the heating step for removing foreign matter and the heating step for drying can be performed, or these heating steps can be performed simultaneously. [An Example of a Manufacturing Method for a Workpiece] Figures 2A to 2E are cross-sectional views illustrating, schematically, an example of the aforementioned manufacturing method when the workpiece is a semiconductor wafer. Here, the manufacturing method is described when the support sheet 1 shown in Figure 1 is used. [Attachment Step] In the aforementioned attachment step, the adhesive layer 12 of the support sheet 1 is attached to the semiconductor wafer 9 (more specifically, the inner surface 9b of the semiconductor wafer 9) and the annular frame 8, which serve as the workpiece. As shown in FIG. 2A, this fixes the semiconductor wafer 109 with the support sheet, which comprises the semiconductor wafer 9 and the support sheet 1 disposed on the inner surface 9b of the semiconductor wafer 9, to the annular frame 8. The semiconductor wafer 109 with the support sheet is the aforementioned workpiece with the support sheet. The support sheet 1 is used after removing the release film 13. The side 12a of the adhesive layer 12 opposite to the substrate 11 side is the same as one side (the side of the adhesive layer 12 side) 1a of the support sheet 1. In FIGS. 2A to 2E, bumps and the like on the circuit surface 9a of the illustrated semiconductor wafer 9 are omitted. In the attachment step, the region of the adhesive layer 12 near the center in the width direction is attached to the semiconductor wafer 9, and the region surrounding the attachment region to the semiconductor wafer 9 is attached to the annular frame 8. The support sheet 1 (adhesive layer 12) can be attached to the semiconductor wafer 9 and the annular frame 8 at room temperature. There is no particular limitation on the attachment speed when attaching the support sheet 1 (adhesive layer 12) to the semiconductor wafer 9 and the annular frame 8, but it is preferably 200 mm / min to 400 mm / min. [Heating Step] Following the aforementioned attachment step, in the aforementioned heating step, as shown in FIG2B, the adhesive layer 12 fixed in the support sheet 1 of the annular frame 8 is heated. In this case, the heating of the adhesive layer 12 is accompanied by the heating of the entire semiconductor wafer 109 with the support sheet. Through this heating, for example, foreign matter such as low molecular weight resin components attached to the surface of the semiconductor wafer 9 (e.g., circuit surface 9a) can be removed by evaporation. The heating temperature of the adhesive layer 12 (i.e., the adhesive layer 12 in the semiconductor wafer 109 with the support sheet) is preferably between 100°C and 135°C. By heating the temperature above the aforementioned lower limit, sufficient heating effect can be obtained. By heating the temperature below the aforementioned upper limit, overheating can be avoided, and for example, degradation of the semiconductor wafer 109 with the support sheet can be suppressed. In the support sheet 1, by means of an adhesion force (Y2) of 13000mN / 25mm or more, even when the semiconductor wafer 109 with the support sheet is heated in a state of being fixed to the annular frame 8 during the aforementioned heating step, the peeling of the semiconductor wafer 109 with the support sheet from the annular frame 8 is suppressed. [Processing Steps] Following the aforementioned attachment and heating steps, in the aforementioned processing steps, as shown in FIG2C, the semiconductor wafer 9 in the heated semiconductor wafer 109 with a support sheet, which is fixed to the annular frame 8, is divided to fabricate a semiconductor wafer 90 as a workpiece. Through the processing steps, a semiconductor wafer group 901 with a support sheet is obtained, which consists of multiple semiconductor wafers 90 arranged and held on a support sheet 1. Symbol 90a represents the circuit surface of semiconductor wafer 90 corresponding to the circuit surface 9a of semiconductor wafer 9. Symbol 90b represents the inner surface of semiconductor wafer 90 corresponding to the inner surface 9b of semiconductor wafer 9. The semiconductor wafer 9 can be divided using known methods. For example, it can be divided by various cutting methods such as blade cutting, laser cutting using laser irradiation, or water cutting using water spray containing abrasive. Alternatively, using a semiconductor wafer 9 that has undergone a modification layer formed by stealth dicing (registered trademark) and has not been diced, the semiconductor wafer 9 can also be divided by extending it in a direction parallel to either the circuit surface 9a or the inner surface 9b. Stealth dicing (registered trademark) is a method as follows: First, a predetermined dicing area is defined inside a semiconductor wafer. Laser light is then focused onto this area, forming a modified layer inside the semiconductor wafer. Unlike other parts of the semiconductor wafer, this modified layer is altered and weakened by laser light irradiation. Therefore, by applying force to the semiconductor wafer, cracks extending along both sides of the wafer are created in the modified layer, becoming the starting point for dicing (cutting) the semiconductor wafer. Subsequently, force is applied to the semiconductor wafer to dice it at the aforementioned modified layer, thus fabricating a semiconductor chip. When the aforementioned adhesive force (X2) in the support sheet 1 is 13000mN / 25mm or more, even if the support sheet 1 (in other words, the semiconductor wafer 109 with the support sheet) is heated to a high temperature of about 135°C (the upper limit) during the aforementioned heating step, even if a large force is applied to the semiconductor wafer 90 during the processing step by dividing the semiconductor wafer 9 or washing the semiconductor wafer 90, the peeling of the semiconductor wafer 90 from the support sheet 1 (adhesive layer 12) is suppressed. When the aforementioned adhesion (X0) in the support sheet 1 is 2000mN / 25mm or more, even if the semiconductor wafer 9 is diced into small-sized semiconductor wafers 90 at high speed during the processing steps, and the small-sized semiconductor wafers 90 with a large amount of cutting chips obtained by this dicing are washed with water at high water pressure, thereby applying greater force to the semiconductor wafers 90, the peeling of the semiconductor wafers 90 from the support sheet 1 (adhesive layer 12) is also suppressed. [Curing Step] Following the aforementioned heating and processing steps, in the aforementioned curing step, as shown in FIG2D, the adhesive layer 12 attached to the annular frame 8 is subjected to energy line curing. Through the curing step, a semiconductor wafer group 901' with a cured support sheet is obtained, consisting of multiple semiconductor wafers 90 arranged and held on a cured support sheet 1'. The adhesive layer 12 is energy line cured to become an energy line cured material 12', thereby the support sheet 1 becomes a cured support sheet 1'. The semiconductor wafer group 901' with a cured support sheet is the workpiece and the cured support sheet laminate described above (in other words, the workpiece with a cured support sheet), and is identical to the semiconductor wafer group 901 with a support sheet except that the adhesive layer 12 becomes the energy line cured material 12' of that adhesive layer 12. The optimal illuminance of the energy beam during the curing of the adhesive layer 12 (when the adhesive layer 12 is irradiated with energy beams) is 60 mW / cm². 2 Up to 320mW / cm 2 The optimal light intensity of the energy line is 100 mJ / cm². 2 Up to 1000mJ / cm 2 The energy beam is preferably directed to irradiate the adhesive layer 12 from the outside of the support sheet 1 via the substrate 11. When the aforementioned adhesive force (Y1) in the support sheet 1 is 300mN / 25mm or more, even if the semiconductor wafer 109 with the support sheet is heated in a fixed state to the annular frame 8 during the aforementioned heating step, and then, during the hardening step, energy lines are irradiated onto the contact portion between the support sheet 1 (adhesive layer 12) and the annular frame 8, the peeling of the semiconductor wafer group 901' with the hardened support sheet from the annular frame 8 is also suppressed. [Pickup Step] Following the aforementioned hardening step, in the aforementioned pickup step, as shown in FIG2E, the energy line hardener 12' of the adhesive layer in the hardened support sheet 1' is pulled away from the semiconductor wafer 90 for pickup, thereby removing the target semiconductor wafer 90 from the semiconductor wafer group 901' with the hardened support sheet. Here, the pickup direction is indicated by arrow P. When picking up the semiconductor wafer 90, a peel occurs between the inner surface 90b of the semiconductor wafer 90 and the side 12a' of the adhesive layer's energy line hardener 12' opposite to the substrate 11 side. At this time, the adhesive force between the adhesive layer's energy line hardener 12' and the semiconductor wafer 90 is less than the adhesive force between the adhesive layer 12 and the semiconductor wafer 90, so the semiconductor wafer 90 can be easily peeled off from the adhesive layer's energy line hardener 12' and easily picked up. The side 12a' of the adhesive layer's energy line hardener 12' opposite to the substrate 11 side corresponds to the side 12a of the adhesive layer 12 opposite to the substrate 11 side, and is the same as one side of the hardened support sheet 1' (the side of the adhesive layer's energy line hardener 12'). The semiconductor wafer 90 can be picked up using known methods. For example, a vacuum clamp or the like can be used as a pulling mechanism 7 to pull the semiconductor wafer 90 away from the self-hardened support sheet 1' (the energy line hardener 12' of the adhesive layer). In the support sheet 1, since the aforementioned adhesion (X1) is 400mN / 25mm or less, even if the support sheet 1 with the semiconductor wafer 9 attached (in other words, the semiconductor wafer 109 with the support sheet) is heated to a high temperature of about 135°C as the upper limit during the aforementioned heating step, and the semiconductor chip 90 is fabricated on the support sheet 1 from the semiconductor wafer 9, the support sheet 1' can still harden itself and normally pick up the semiconductor chip 90, resulting in high pick-up performance. [Other Steps] The aforementioned manufacturing method may also include other steps that are not equivalent to any of the attachment step, heating step, processing step, hardening step, and pick-up step. The types of the aforementioned other steps, the number of the aforementioned other steps, and the timing of performing the aforementioned other steps can be arbitrarily selected according to the purpose, and there are no particular limitations. [Other Examples of Manufacturing Methods for Workpieces] For the foregoing, a manufacturing method for workpieces was described in which the attachment step, heating step, machining step, hardening step, and picking step are performed in sequence (hereinafter, sometimes referred to as "manufacturing method (1)"). However, the manufacturing method for workpieces in this embodiment is not limited to this (manufacturing method (1)). For example, in the aforementioned manufacturing method, as described above, the order of the heating step and the machining step can also be reversed. [Attachment Step] In the manufacturing method of this type of workpiece (hereinafter, sometimes referred to as "manufacturing method (2)"), the attachment step is performed first. The attachment step described above in manufacturing method (2) is the same as the attachment step in manufacturing method (1). [Processing Steps] Following the attachment step described in manufacturing method (2), in the aforementioned processing steps, the semiconductor wafer in the unheated semiconductor wafer with support sheet fixed to the annular frame is divided to produce a semiconductor wafer as a workpiece. Through the processing steps, except for the aspect of not being heated, a group of semiconductor wafers with support sheets, the same as in manufacturing method (1), is obtained. When the aforementioned adhesion (X0) in the support sheet is 2000mN / 25mm or more, even if the semiconductor wafer is diced into small semiconductor wafers at high speed during the processing steps, and the small semiconductor wafers with a large amount of cutting chips obtained by this dicing are washed with high water pressure, a greater force is applied to the semiconductor wafers, and the peeling of the semiconductor wafers from the support sheet (adhesive layer) is also suppressed. [Heating Step] Following the attachment and processing steps described in manufacturing method (2), the adhesive layer fixed in the support sheet of the annular frame is heated in the aforementioned heating step. In this case, the heating of the adhesive layer is accompanied by the heating of the entire semiconductor wafer assembly with the support sheet. By this heating, for example, foreign matter such as low molecular weight resin components attached to the surface of the semiconductor wafer (e.g., circuit surface) can be removed by evaporation. In addition, after the fine foreign matter generated during the dicing of the semiconductor wafer and attached to the surface of the semiconductor wafer is removed by water, the semiconductor wafer can be dried by this heating. By the heating step, a semiconductor wafer assembly with a support sheet is obtained in the same manner as in manufacturing method (1). In the support sheet, by means of an adhesion force (Y2) of 13000mN / 25mm or more, even if the semiconductor wafer group with the support sheet is heated in a state of being fixed in the ring frame during the heating step, the peeling of the semiconductor wafer group with the support sheet from the ring frame is suppressed. When the aforementioned adhesive force (X2) in the support sheet is 13000mN / 25mm or higher, even if the support sheet with the attached semiconductor wafer (in other words, the semiconductor wafer group with the support sheet) is heated to a high temperature of about 135°C (the upper limit) during the aforementioned heating step, and a large force is applied to the semiconductor wafer, the peeling of the semiconductor wafer from the support sheet (adhesive layer) is also suppressed. [Curing Step] After the heating and processing steps described in manufacturing method (2), the aforementioned curing step can be performed in the same manner as in manufacturing method (1) to obtain a semiconductor wafer group with a cured support sheet in the same manner as in manufacturing method (1). When the aforementioned adhesive force (Y1) in the support sheet is 300mN / 25mm or more, even if the support sheet with the attached semiconductor wafer (in other words, the semiconductor wafer group with the support sheet) is heated in a fixed state to the annular frame during the aforementioned heating step, and then, during the curing step, energy lines are irradiated onto the contact portion between the support sheet (adhesive layer) and the annular frame, the peeling of the semiconductor wafer group with the cured support sheet from the annular frame is also suppressed. [Pick-up Step] After the hardening step described in manufacturing method (2), the aforementioned pick-up step can be performed in the same manner as in manufacturing method (1). Through the aforementioned pick-up step, the target semiconductor wafer, which is the same as that in manufacturing method (1), can be removed. In the support sheet, since the aforementioned adhesion (X1) is less than 400mN / 25mm, even if the semiconductor wafer group with the support sheet is heated to a high temperature of about 135°C as the upper limit during the aforementioned heating step, the support sheet can harden itself and normally pick up the semiconductor wafer, resulting in high pick-up performance. [Other Steps] Manufacturing method (2) may also have other steps similar to those in manufacturing method (1). In manufacturing method (2), the types of the aforementioned other steps, the number of the aforementioned other steps, and the timing of performing the aforementioned other steps can all be arbitrarily selected according to the purpose, and there are no particular limitations. [Example] The present invention will now be described in more detail with reference to specific embodiments. However, the present invention is not limited to the embodiments shown below. [Raw Materials for Resin Manufacturing] The following shows the formal names of the raw materials for manufacturing the resins, which are abbreviated in this embodiment and comparative example. 2EHA: 2-Ethylhexyl acrylate; 2EHMA: 2-Ethylhexyl methacrylate; HEA: 2-Hydroxyethyl acrylate; HEMA: 2-Hydroxyethyl methacrylate; MOI: 2-Methylacryloxyethyl isocyanate. [Raw Materials for Manufacturing Adhesive Composition (I)] The following describes the raw materials used in manufacturing adhesive composition (I) in this example and comparative example. The viscosity of the four crosslinking agents (β) at 23°C was measured using a digital rotary viscometer "VISCOLEAD ADVANCE" manufactured by VISCOTECH. [Energy Line Hardening Compound (α)] (α)-1: 2-(2-phenoxyethoxy)ethyl acrylate, "AMP-20GY" manufactured by Shin-Nakamura Chemical Industry Co., Ltd., with a viscosity of 18 mPa·s and a molecular weight of 236.1 at 23°C. (α)-2: "R-684" manufactured by Nippon Kayaku Co., Ltd., with a viscosity of 180 mPa·s and a molecular weight of 304.4 at 23°C. (α)-3: methyl acrylate (2-(1-(acryloyloxy)-2-methylpropane-2-yl)-5-ethyl-1,3-dioxane-5-yl) acrylate, "A-DOG" manufactured by Shin-Nakamura Chemical Industry Co., Ltd., with a viscosity of 310 mPa·s and a molecular weight of 326.4 at 23°C. [Crosslinking Agent (β)] (β)-1: Trimethylolpropane adduct of 1,6-hexamethylene diisocyanate ("Coronate HL" manufactured by Tosoh Co., Ltd.) (β)-2: Isocyanurate modified hexamethylene diisocyanate (Coronate HX manufactured by Tosoh Corporation) [Photopolymerization initiator (γ)] (γ)-1: 2-hydroxy-1-(4-(4-(2-hydroxy-2-methylpropionic acid)benzyl)phenyl)-2-methylpropane-1-one (Omnirad 127 manufactured by IGM Resins) Furthermore, both line-hardening compounds (α)-1 and (α)-3 are acrylates with substituents. In line-hardening compound (α)-1, the hydrocarbon group derived from the alcohol has 2 substituents, and the hydrocarbon group has 12 carbon atoms. In line-hardening compound (α)-3, the hydrocarbon group derived from the alcohol has 2 substituents, and the hydrocarbon group has 13 carbon atoms. On the other hand, line-hardening compound (α)-2 is an acrylate without substituents. In line-hardening compound (α)-2, the hydrocarbon group derived from the alcohol has 12 carbon atoms. [Example 1] [Manufacturing of Support Sheet] [Manufacturing of Energy Line Curable Acrylic Resin (Ia)] MOI was added to acrylic polymer (1), and an addition reaction was carried out in an air stream at 50°C for 48 hours to obtain energy line curable acrylic resin (Ia)-1. The aforementioned acrylic polymer (1) is a copolymer of 2EHA (35 parts by mass), 2EHMA (45 parts by mass), and HEMA (20 parts by mass). The amount of MOI used was set to be 0.95 times the total number of isocyanate groups in MOI relative to the total number of moles of hydroxyl groups derived from HEMA in the aforementioned acrylic polymer (1). The obtained energy line curable acrylic resin (Ia)-1 had a weight average molecular weight of 440,000 and a glass transfer temperature of -26°C. [Preparation of Adhesive Composition (I)] A line-curable adhesive composition (I)-1 was prepared, which contains a line-curable acrylic resin (Ia)-1 (100 parts by mass), a line-curable compound (α)-1 (15 parts by mass), a crosslinking agent (β)-1 (1.17 parts by mass), and a photopolymerization initiator (γ)-1 (3 parts by mass), and further contains methyl ethyl ketone as a solvent, and the total concentration of all components other than the solvent is 25% by mass. Furthermore, the contents of all components other than methyl ethyl ketone shown here are the contents of the target substance without solvent. [Formation of Adhesive Layer] A release film (second release film) made of polyethylene terephthalate with one side treated by polysiloxane is coated with the adhesive composition (I)-1 obtained above on the release-treated side of the release film and heated and dried at 100°C for 2 minutes to form an energy line hardening adhesive layer with a thickness of 15 μm. [Manufacturing of the Support Sheet] Subsequently, at room temperature, the bonding speed was set to 5 m / min and a pressure of 0.4 MPa was applied to bond a polypropylene film (manufactured by DiaPlus Film, 80 μm thick) as the substrate to the exposed surface of the adhesive layer. One side of the polypropylene film is a matte surface with a surface roughness (Ra) of 0.90 μm, and the other side is a slightly matte surface with a surface roughness (Ra) of 0.12 μm. The aforementioned adhesive layer is bonded to the aforementioned matte surface of the polypropylene film. Through the above steps, the target support sheet is obtained. [Evaluation of Support Sheet] [Determination of Adhesion Force (X1) between the Heat-cured Adhesive Layer and the Silicon Mirror Wafer] A 25mm wide sample was cut from the support sheet obtained above. Under the bonding temperature conditions of 23°C (lamination roller temperature 23°C, silicon mirror wafer temperature 23°C), the bonding speed was set to 300mm / min, and the bonding pressure was set to 0.3MPa. The sample was bonded to the mirror surface of the silicon mirror wafer (thickness 650μm) using the adhesive layer, obtaining a silicon mirror wafer with the sample. The silicon mirror wafer with the sample was placed inside an oven at a temperature of 130°C and heated at that temperature (130°C) for 2 hours. Then, the silicon mirror wafer with the sample was removed from the oven and allowed to cool to 23°C. Then, using an ultraviolet irradiation device (LINDECO's "RAD-2000UV"), at an illuminance of 230 mW / cm², [the treatment was carried out]. 2 Light intensity 200mJ / cm 2 Under these conditions, the adhesive layer in the silicon mirror wafer of the sample is irradiated with ultraviolet light through the substrate, thereby causing the adhesive layer in the sample to be cured by ultraviolet light. Subsequently, at 23°C, the peeling speed was set to 300 mm / min, and the aforementioned test piece was peeled from the silicon mirror wafer. At this time, the test piece was peeled along its length (180° peeling) with the surface of the silicon mirror wafer originally attached to it forming a 180° angle with the surface of the test piece originally attached to it. The load (peeling force) during this 180° peeling was then measured over a length of 50 mm. The measured values ​​corresponding to the first and last 5 mm of the measured length were excluded from the valid values. The average value of these measured values ​​was then used as the adhesion force (mN / 25 mm). This adhesion force was measured twice, and the average value was used as the adhesion force (X1) (mN / 25 mm) between the heat-cured adhesive layer and the silicon mirror wafer. The results are shown in Table 1. [Determination of Adhesion Force (X2) between the Heated Adhesive Layer and the Silicon Mirror Wafer] Using the same method as for the adhesion force (X1) determination described above, a silicon mirror wafer with a sample was prepared and heated at 130°C for 2 hours, then cooled to 23°C. Next, at 23°C, the peeling speed was set to 300 mm / min, and the sample was peeled from the silicon mirror wafer after cooling. At this point, the sample was peeled along its length at a 180° angle between the surface of the silicon mirror wafer to which the sample was originally attached and the surface of the sample to which the silicon mirror wafer was originally attached. Then, the load (peeling force) during the 180° peel was measured, with a measurement length of 50 mm. The measured values ​​corresponding to the initial 5 mm and the final 5 mm lengths were excluded from the valid values. The average value of this measurement was then used as the adhesion force (mN / 25mm). This adhesion force was measured twice, and the average value was used as the adhesion force (X2) (mN / 25mm) between the heated adhesive layer and the silicon mirror wafer. The results are shown in Table 1. [Determination of Adhesion (Y1) between the Heat-cured Adhesive Layer and the SUS Plate] Instead of the mirror surface of the aforementioned silicon mirror wafer, a test piece was attached to the #1200 polished surface of an SUS plate (PALTEK "SUS304 #1200HL, 1000μm thick, 70mm × 150mm"). Except for this, the SUS plate with the test piece was obtained using the same method as for the adhesion (X1) determination described above. Then, the SUS plate with the test piece was heated to 130°C for 2 hours using the same method as for the silicon mirror wafer with the test piece in the adhesion (X1) determination described above. The temperature of the SUS plate with the test piece was then cooled to 23°C by allowing it to cool. Ultraviolet light was then irradiated onto the adhesive layer of the SUS plate with the test piece through the substrate, thereby causing the adhesive layer in the test piece to undergo UV curing. Subsequently, at 23°C, the peeling speed was set to 300 mm / min, and the aforementioned test piece was peeled from the SUS plate. At this time, the test piece was peeled along its length (180° peeling) at a 180° angle between the surface of the SUS plate to which the test piece was originally attached and the surface of the test piece to which the SUS plate was originally attached. The load (peeling force) during this 180° peel was then measured over a length of 50 mm. The values ​​corresponding to the first and last 5 mm of the measured length were excluded from the valid values. The average value of these measured values ​​was then used as the adhesive force (mN / 25 mm). This adhesive force measurement was performed twice, and the average value was used as the adhesive force (Y1) (mN / 25 mm) between the heat-cured adhesive layer and the SUS plate. The results are shown in Table 1. [Determination of Adhesion Strength (Y2) between the Heated Adhesive Layer and the SUS Plate] Using the same method as for the adhesion strength (Y1) determination described above, an SUS plate with a test piece was prepared and heated at 130°C for 2 hours, then cooled to 23°C. Next, at 23°C, the test piece was peeled from the cooled SUS plate at a peeling speed of 300 mm / min. The test piece was then peeled along its length at a 180° angle between the surface of the SUS plate to which the test piece was originally attached and the surface of the test piece to which the SUS plate was originally attached. The load (peeling force) during this 180° peel was then measured over a length of 50 mm. The values ​​corresponding to the first and last 5 mm of the measured length were excluded from the valid values. The average value of these measured values ​​was used as the adhesion strength (mN / 25 mm). Two such adhesion measurements were performed, and the average value was used as the adhesion force (Y2) between the heated adhesive layer and the SUS plate (mN / 25mm). The results are shown in Table 1. [Determination of Adhesion Force (X0) between Adhesive Layer and Silicon Mirror Wafer] A silicon mirror wafer with a test piece was prepared using the same method as for the adhesion force (X1) determination described above. The silicon mirror wafer with the test piece was then placed at 23°C for 30 minutes. Next, at 23°C, the test piece was peeled off from the silicon mirror wafer after the period of placement at a peeling speed of 300 mm / min. At this time, the test piece was peeled off along its length (180° peeling) with the surface of the silicon mirror wafer to which the test piece was originally attached forming a 180° angle with the surface of the test piece to which the silicon mirror wafer was originally attached. Then, the load (peel force) during the 180° peel was measured, with a measurement length of 50 mm. The measured values ​​corresponding to the first and last 5 mm lengths were excluded from the valid values. The average value of these measured values ​​was used as the adhesion force (mN / 25 mm). This adhesion force was measured twice, and the average value of these measurements was used as the adhesion force (X0) (mN / 25 mm) between the adhesive layer and the silicon mirror wafer. The results are shown in Table 1. [Calculation of the average light transmittance of the support sheet (400nm to 800nm)] Using a UV-vis measuring device (Shimadzu Corporation "UV-vis-NIR3600"), the light transmittance of the support sheet obtained above was measured by direct illumination without using an integrating sphere, under external illumination from the substrate side. The wavelength range for measurement was 190nm to 2000nm. Then, the light transmittance values ​​were summed every 1nm in the visible light region of 400nm to 800nm. The average light transmittance (400nm to 800nm) of the support sheet was calculated by dividing the summed value by the summed light transmittance values ​​(i.e., 800 - 400 + 1 = 401). The results are shown in Table 1. [Evaluation of the effectiveness of suppressing the peeling of the support sheet from the annular frame after heating] A 12-inch silicon wafer (500 μm thick) was prepared. The adhesive layer of the aforementioned support sheet, with a central region in the width direction, was attached to the silicon wafer, and the region surrounding the attachment area to the silicon wafer was attached to the annular frame. The attachment of the adhesive layer to the silicon wafer and the annular frame was performed at an attachment temperature of 23°C (lamination roller temperature 23°C, silicon wafer temperature 23°C), with an attachment speed of 300 mm / min and an attachment pressure of 0.3 MPa. This fixed the silicon wafer with the support sheet, consisting of the silicon wafer and the support sheet disposed on one side of the silicon wafer, to the annular frame. Then, the silicon wafer with the support sheet fixed to the annular frame was placed inside an oven. At this point, the silicon wafer with a support plate fixed to the annular frame is arranged so that the exposed surface of the silicon wafer (the side opposite to the side with the support plate) is horizontal, and then heated at 130°C for 2 hours. Next, the silicon wafer with a support sheet fixed to the annular frame was removed from the outside of the oven. Visual inspection was performed from the outside of the support sheet on the substrate side to confirm whether the support sheet had peeled off from the annular frame, and the extent of peeling if so. When the silicon wafer with the support sheet fixed to the annular frame was configured as described above, when the support sheet peeled off from the annular frame, it peeled off from the inner circumference of the annular frame. Therefore, when the support sheet peeled off from the annular frame, the distance from the inner circumference of the annular frame to the edge of the peeled portion of the support sheet was identified as the peeled portion (i.e., the peeled portion with the maximum peeling distance). Based on whether peeling occurred and the maximum peeling distance, the effectiveness of suppressing the peeling of the support sheet from the annular frame after heating was evaluated according to the following criteria. The results are shown in Table 1. (Evaluation Criteria) A: No peeling of the support sheet from the annular frame, or peeling but the maximum peeling distance is less than 2 mm, indicates high peeling suppression effectiveness. B: With a support piece peeling off from the annular frame, the maximum peeling distance exceeds 2mm but is less than 5mm, indicating low peeling inhibition effectiveness. C: With a support piece peeling off from the annular frame, the maximum peeling distance exceeds 5mm, indicating particularly low peeling inhibition effectiveness. [Evaluation of the Pickup Capability of Silicon Wafers with Support Sheets] (Manufacturing of Silicon Wafer Clusters with Support Sheets) Prepare an 8-inch silicon wafer (350 μm thick) with one side polished to #2000. Attach the adhesive layer from the aforementioned support sheet, with a region near the center in the width direction, to the silicon wafer. Attach the region surrounding the attachment area to the silicon wafer to an annular frame. The attachment of the adhesive layer to the silicon wafer and the annular frame is performed at an attachment temperature of 23°C (lamination roller temperature 23°C, silicon wafer temperature 23°C), with an attachment speed of 300 mm / min and an attachment pressure of 0.3 MPa. This secures the silicon wafer with the support sheet, consisting of the silicon wafer and the support sheet disposed on one side of the silicon wafer, to the annular frame (attachment step). Next, the silicon wafer with a support plate fixed to the annular frame is placed inside the oven and heated at 130°C for 2 hours (heating step). At this time, the silicon wafer with a support plate fixed to the annular frame is arranged inside the oven so that the exposed side of the silicon wafer (the side opposite to the side with the support plate) is horizontal. Next, the silicon wafer with a support plate fixed to the annular frame is removed from the oven and cooled to 23°C by placing it in a cooling environment. Then, using a cutting device (DISCO's "DFD6362"), the silicon wafer with the support plate fixed to the annular frame is cut to produce multiple silicon wafers with a size of 3mm × 3mm (processing step). At this time, using DISCO's "ZH05-SD2000-N1-90 CC" as the cutting blade, the blade speed is set to 35000 rpm, the blade feed rate is set to 30 mm / s, and the blade height is set to 0.06mm. The blade is inserted into the surface of the silicon wafer with the support plate from the silicon wafer side, cutting into a region of 20μm deep in the substrate from the surface of the adhesive layer side. Through the above steps, a silicon wafer array with a support sheet is fabricated, in which multiple silicon wafers are arranged and held on a support sheet. [Evaluation of the pick-up performance of the silicon wafer with the support sheet] Subsequently, using an ultraviolet irradiation device (RAD-2000UV manufactured by Lintec Corporation), the adhesive layer in the silicon wafer assembly with the support sheet was irradiated from the outside of the substrate side, with the substrate in between, at an illuminance of 230mW / cm². 2 Light intensity 200mJ / cm 2Under certain conditions, ultraviolet light was irradiated to harden the adhesive layer attached to the annular frame (hardening step). Then, using a pick-up / gluing device (Canon Machinery's "BESTEM D-510"), the silicon wafers of the silicon wafer group with hardened support sheets were picked up from the hardened adhesive layer under the following pick-up conditions (pick-up step). This pick-up was performed on a total of 100 silicon wafers in a region of 10 rows in two orthogonal directions, divided from the center of the silicon wafer before dicing and its vicinity, and was performed by lifting one silicon wafer at a time from the support sheet side using a pin. The pick-up performance of the support sheet was then evaluated according to the following criteria. The results are shown in Table 1. [Pickup Conditions] Lifting speed: 5mm / s; Extension: 4mm; Radius of curvature at the pin tip: 0.75mm [Evaluation Criteria] A: Able to pick up all silicon wafers (100 wafers) normally. B: Although unable to pick up 1 to 4 silicon wafers normally, able to pick up all other silicon wafers normally (96 to 99 wafers). C: Unable to pick up more than 5 silicon wafers normally. [Example 2] [Manufacturing and Evaluation of Support Sheet] A line-curable adhesive composition (I)-2 was prepared. This line-curable adhesive composition (I)-2 had the same composition as in Example 1, except that it contained 10 parts by mass of line-curable compound (α)-3 instead of 15 parts by mass of line-curable compound (α)-1, and 1.33 parts by mass of crosslinking agent (β)-1 instead of 1.17 parts by mass. Furthermore, a support sheet was manufactured using the same method as in Example 1, except that this adhesive composition (I)-2 was used instead of adhesive composition (I)-1, and the results were evaluated. The results are shown in Table 1. [Example 3] [Manufacturing and Evaluation of Support Sheet] A line-curing adhesive composition (I)-3 was prepared. This line-curing adhesive composition (I)-3 had the same composition as in Example 1, except that it contained 10 parts by mass of line-curing compound (α)-2 instead of 15 parts by mass of line-curing compound (α)-1, and 1.33 parts by mass of crosslinking agent (β)-1 instead of 1.17 parts by mass. Furthermore, a support sheet was manufactured using the same method as in Example 1, except that this adhesive composition (I)-3 was used instead of adhesive composition (I)-1, and the results were evaluated. The results are shown in Table 1. [Reference Example 1] [Manufacturing of Support Sheet] [Manufacturing of Energy Line Curable Acrylic Resin (Ia)] MOI was added to the aforementioned acrylic polymer (1), and an addition reaction was carried out at 50°C for 48 hours in an air stream to obtain energy line curable acrylic resin (Ia)-2. The amount of MOI used was set to be 0.785 times the total number of isocyanate groups in MOI relative to the total number of moles of hydroxyl groups derived from HEMA in the aforementioned acrylic polymer (1). The obtained energy line curable acrylic resin (Ia)-2 had a weight average molecular weight of 500,000 and a glass transfer temperature of -26°C. [Preparation of Adhesive Composition (I)] A line-curable adhesive composition (R)-1 was prepared, which contains a line-curable acrylic resin (Ia)-2 (100 parts by mass), a line-curable compound (α)-1 (25 parts by mass), a crosslinking agent (β)-2 (4.12 parts by mass), and a photopolymerization initiator (γ)-1 (3 parts by mass), and further contains methyl ethyl ketone as a solvent, and the total concentration of all components other than the solvent is 25% by mass. Furthermore, the contents of all components other than methyl ethyl ketone shown here are the contents of the target substance without solvent. [Manufacturing of the support sheet] Except for the use of adhesive composition (R)-1 instead of adhesive composition (I)-1, the support sheet is manufactured using the same method as in Example 1. [Evaluation of the support sheet] The support sheet obtained above was evaluated using the same method as in Example 1. The results are shown in Table 1. [Comparative Example 1] [Manufacturing of Support Sheet] [Manufacturing of Adhesive Composition] A line-curable adhesive composition (R)-2 was prepared. This line-curable adhesive composition (R)-2 contains a line-curable acrylic resin (Ia)-1 (100 parts by mass), a crosslinking agent (β)-1 (0.53 parts by mass), and a photopolymerization initiator (γ)-1 (3 parts by mass), and further contains methyl ethyl ketone as a solvent. The total concentration of all components other than the solvent is 25% by mass. In addition, the contents of all components other than methyl ethyl ketone shown here are the contents of the target substance without solvent. [Manufacturing of the support sheet] Except for the use of adhesive composition (R)-2 instead of adhesive composition (I)-1, the support sheet is manufactured using the same method as in Example 1. [Evaluation of the support sheet] The support sheet obtained above was evaluated using the same method as in Example 1. The results are shown in Table 1. [Comparative Example 2] [Manufacturing of Support Sheet] [Manufacturing of Energy Line Curing Acrylic Resin (Ia)] MOI was added to acrylic polymer (2), and an addition reaction was carried out at 50°C for 48 hours in an air stream to obtain energy line curing acrylic resin (Ia)-3. The aforementioned acrylic polymer (2) is a copolymer of 2EHA (35 parts by mass), 2EHMA (45 parts by mass), and HEA (20 parts by mass). The amount of MOI used was set to be 0.7 times the total number of isocyanate groups in MOI relative to the total number of moles of hydroxyl groups derived from HEA in the aforementioned acrylic polymer (2). The obtained energy line curing acrylic resin (Ia)-3 had a weight average molecular weight of 880,000 and a glass transfer temperature of -35°C. [Preparation of Adhesive Composition] A line-curable adhesive composition (R)-3 was prepared, which contains a line-curable acrylic resin (Ia)-3 (100 parts by mass), a crosslinking agent (β)-1 (9.26 parts by mass), and a photopolymerization initiator (γ)-1 (3 parts by mass), and further contains methyl ethyl ketone as a solvent, and the total concentration of all components other than the solvent is 25% by mass. Furthermore, the contents of all components other than methyl ethyl ketone shown here are the contents of the target substance without solvent. [Manufacturing of the support sheet] Except for the use of adhesive composition (R)-3 instead of adhesive composition (I)-1, the support sheet is manufactured using the same method as in Example 1. [Evaluation of the support sheet] The support sheet obtained above was evaluated using the same method as in Example 1. The results are shown in Table 1. [Table 1] The results above clearly show that in Examples 1 to 3, the adhesion (Y2) is sufficiently large at 15600 mN / 25 mm or more. This indicates that even when the silicon wafer with the support sheet fixed to the annular frame is heated to a high temperature, the peeling of the support sheet from the annular frame is still highly suppressed, demonstrating high peeling suppression effectiveness. In Examples 1 to 3, the adhesion (X1) is less than 200 mN / 25 mm. Even after heating the support sheet with the silicon mirror wafer attached at 130°C for 2 hours, it can still normally pick up almost all of the silicon wafer, demonstrating high pick-up performance. Thus, the support sheets of Examples 1 to 3 possess the target characteristics. In Examples 1 to 3, it is speculated that the adhesive composition (I) contains a line-curing acrylic resin (Ia) and a line-curing compound (α), which can easily achieve the properties described above. It is speculated that the properties described above are more easily achieved, especially because the line-curing compound (α) has a specific range of structures. Furthermore, in Examples 1 to 3, it is speculated that the properties described above are more easily achieved because the crosslinking agent (β) also has a specific range of structures. Furthermore, in Examples 1 to 3, the adhesion (X2) is sufficiently large at 15000 mN / 25 mm or more, so that even after heating the silicon wafer with the support sheet at high temperature, and applying a large force to the silicon wafer through cutting of the silicon mirror wafer or washing of the cut silicon wafer with water, the peeling of the silicon wafer from the support sheet is suppressed. Furthermore, it is speculated that in Examples 1 to 3, the adhesion (X0) is sufficiently large at 2900 mN / 25 mm or more, so that even if the silicon mirror wafer is subjected to high-speed cutting or washing of the cut silicon wafer with high-pressure water, significantly large forces are applied to the silicon wafer, the peeling of the silicon wafer from the support sheet can be suppressed. In particular, in Examples 1 and 2, the adhesion (Y1) was significantly greater than 470 mN / 25 mm. It is speculated that even if the support sheet of Examples 1 and 2 is fixed to the annular frame in the state of a silicon wafer with the support sheet and heated, and energy lines are irradiated on the contact portion between the support sheet (adhesive layer) and the annular frame, the peeling of the silicon wafer group with the hardened support sheet from the annular frame can be suppressed. Furthermore, in Examples 1 to 3, the average light transmittance (400nm to 800nm) of the support sheet is high enough to be above 81.4%, thus exhibiting superior characteristics. Thus, the non-target properties of the support sheets in Examples 1 to 3 are also superior and better. In contrast, in Reference Example 1, the adhesion (Y2) is small. This reflects that the effectiveness of preventing the support sheet from peeling off from the annular frame after heating the silicon wafer with the support sheet fixed to the annular frame at a high temperature is particularly low. In Reference Example 1, the adhesion (X1) is 350 mN / 25 mm, and the pick-up performance of the silicon wafer after heating the support sheet with the attached silicon mirror wafer at 130°C for 2 hours is worse than in Examples 1 to 3. Furthermore, in Reference Example 1, it is speculated that the adhesion (X2) is small, so when the silicon wafer with the support sheet is heated to a high temperature and then subjected to a large force by cutting a silicon mirror wafer or washing the cut silicon wafer with water, the peeling of the silicon wafer from the support sheet cannot be prevented. Furthermore, in Reference Example 1, it is speculated that the adhesion (X0) is small, so when a significantly large force is applied to the silicon wafer, for example, by cutting a silicon mirror wafer at high speed or washing the cut silicon wafer with high pressure, the peeling of the silicon wafer from the support sheet cannot be prevented. In Comparative Examples 1 and 2, the adhesion (Y2) was low, below 12000 mN / 25 mm. This indicates that the effectiveness of preventing the support sheet from peeling off from the annular frame after heating the silicon wafer with the support sheet fixed to the annular frame at a high temperature was low. In Comparative Examples 1 and 2, energy-line hardening compound (α) was not used. Furthermore, in Comparative Example 2, the adhesion (X1) was large. After heating the support sheet with the attached silicon mirror wafer at 130°C for 2 hours, it could not properly pick up the silicon wafer, resulting in low pick-up performance. Furthermore, in Comparative Example 1, it is speculated that the adhesion (Y1) is also insufficient, and even when the silicon wafer assembly with the hardened support sheet is in the state of being, the effect of the support sheet in suppressing peeling from the annular frame is still insufficient. Furthermore, in Comparative Example 2, it is speculated that the adhesion (X2) is small, and when a large force is applied to the silicon wafer after heating the silicon wafer with the support sheet at a high temperature, such as by cutting a silicon mirror wafer or washing the cut silicon wafer with water, the effect of suppressing the silicon wafer from peeling from the support sheet is low. [Industry Applicability] This invention can be used to manufacture workpieces such as semiconductor wafers. 1: Support sheet 1a: One side of the support sheet 1': Hardened support sheet 1a': One side of the hardened support sheet 7: Pull-off mechanism 8: Annular frame 9: Semiconductor wafer 9a: Circuit surface of the semiconductor wafer 9b: Inner surface of the semiconductor wafer 11: Substrate 11a: One side of the substrate 12: Adhesive layer 12a: One side of the adhesive layer 12': Power line hardener 12a': One side of the power line hardener 13: Release film 90: Semiconductor wafer 90a: Circuit surface of the semiconductor wafer 90b: Inner surface of the semiconductor wafer 901: Semiconductor wafer array with support sheet 901': Semiconductor wafer array with hardened support sheet [Figure 1] is a cross-sectional view schematically illustrating an example of a support sheet according to an embodiment of the present invention. [Figure 2A] is a cross-sectional view schematically illustrating an example of a method for manufacturing a workpiece with a protective film according to an embodiment of the present invention. [Figure 2B] is a cross-sectional view schematically illustrating an example of a method for manufacturing a workpiece with a protective film according to an embodiment of the present invention. [Figure 2C] is a cross-sectional view schematically illustrating an example of a method for manufacturing a workpiece with a protective film according to an embodiment of the present invention. [Figure 2D] is a cross-sectional view schematically illustrating an example of a method for manufacturing a workpiece with a protective film according to an embodiment of the present invention. [Figure 2E] is a cross-sectional view schematically illustrating an example of a method for manufacturing a workpiece with a protective film according to an embodiment of the present invention. 1: Support plate 11: Substrate 11a: One side of the substrate 12: Adhesive layer 12a: One side of the adhesive layer 13: Peel-off membrane

Claims

1. A support sheet comprising a substrate and an adhesive layer disposed on one side of the substrate; wherein the adhesive layer is energy-line hardening; when the support sheet is attached to the surface of a stainless steel plate by means of the adhesive layer and the adhesive layer is heated at 130°C after attachment, and the adhesion (Y2) between the heated adhesive layer and the stainless steel plate is measured, the adhesion (Y2) is 13000mN / 25mm or more; when the support sheet is attached to the mirror surface of a silicon mirror wafer by means of the adhesive layer and the adhesive layer is heated at 130°C after attachment, and the heated adhesive layer is energy-line hardened, and the adhesion (X1) between the energy-line hardened adhesive layer and the silicon mirror wafer is measured, the adhesion (X1) is 400mN / 25mm or less; When the aforementioned support sheet is attached to the mirror surface of the silicon mirror wafer using the aforementioned adhesive layer, and the aforementioned adhesive layer is heated at 130°C, the adhesion force (X2) between the aforementioned adhesive layer and the aforementioned silicon mirror wafer after heating is measured, and the aforementioned adhesion force (X2) is 13000mN / 25mm or more.

2. The support sheet as described in claim 1, wherein the aforementioned adhesive layer comprises a power line curing compound and a power line curing acrylic resin.

3. The support sheet as described in claim 1 or 2, wherein when the support sheet is attached to the surface of the stainless steel plate by means of the aforementioned adhesive layer, and the aforementioned adhesive layer is heated at 130°C after attachment, and the aforementioned adhesive layer is subjected to energy line hardening after heating, and the adhesion (Y1) between the energy line hardened product of the aforementioned adhesive layer and the aforementioned stainless steel plate is measured, the aforementioned adhesion (Y1) is 300mN / 25mm or more.

4. The support sheet as described in claim 1 or 2, wherein when the support sheet is attached to the mirror surface of the silicon mirror wafer by means of the adhesive layer, and the silicon mirror wafer with the support sheet is kept at a temperature of 23°C for 30 minutes, the adhesion force (X0) between the adhesive layer and the silicon mirror wafer is measured, and the adhesion force (X0) is 2000mN / 25mm or more.

5. A method for manufacturing a workpiece, comprising the following steps: an attachment step, wherein the aforementioned adhesive layer of a support sheet as described in any one of claims 1 to 4 is attached to a workpiece and an annular frame, thereby fixing the workpiece with the support sheet to the annular frame, wherein the workpiece with the support sheet comprises the aforementioned workpiece and the aforementioned support sheet disposed on the aforementioned workpiece; a heating step, wherein, after the aforementioned attachment step, the aforementioned adhesive layer of the aforementioned support sheet fixed to the aforementioned annular frame is heated; a processing step, wherein, after the aforementioned attachment step, the aforementioned workpiece is processed by processing the aforementioned workpiece fixed to the aforementioned annular frame with the aforementioned support sheet to produce the aforementioned workpiece; a hardening step, wherein, after the aforementioned heating step and processing step, the aforementioned adhesive layer attached to the aforementioned annular frame is subjected to energy line hardening; and a pickup step, wherein, after the aforementioned hardening step, the workpiece is picked up by peeling the hardened material from the aforementioned adhesive layer.

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