Substrate treating apparatus

Abstract

This disclosure provides a substrate processing apparatus, comprising: a container portion having a substrate processing region formed therein, the container portion including a supply port for supplying processing fluid to the substrate processing region, and a discharge port for discharging the processing fluid from the substrate processing region; a fluid supply unit for supplying the processing fluid to the substrate processing region; and a discharge unit for discharging the processing fluid from the container portion. The discharge unit includes: a main line connected to the discharge port; an extension line branching from at least one of a first node and a second node of the main line, the extension line including at least one of a first opening or a first one-way valve to regulate the discharge speed; and an auxiliary line branching from a third node of the main line, the auxiliary line not having an opening or a one-way valve.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus.

[0002] This application claims the priority of Korean Patent Application No. 10-2022-0139802, filed with the Korean Intellectual Property Office on October 27, 2022, and all rights arising under 35 U.S.C. 119, the entire contents of which are incorporated herein by reference. Prior Art

[0003] To manufacture semiconductor devices, various processes such as deposition, photolithography, etching, and cleaning need to be performed. Among them, the photolithography process includes a coating process, an exposure process, and a development process. The coating process includes coating a photosensitive liquid, such as photoresist, on a substrate. The exposure process includes exposing a light source light through a mask on the coated photoresist film to expose the circuit pattern on the substrate. Finally, the development process includes selectively developing the exposed area on the substrate.

[0004] The development process includes a developer supply step, a rinse solution supply step, and a drying step. In the drying step, the rotary chuck supporting the substrate is rotated, and spin drying is performed using the centrifugal force applied to the substrate by the rotary chuck to dry the developer or rinse solution remaining on the substrate.

[0005] In recent years, with the miniaturization of the critical dimension (CD) between patterns formed on a substrate, a leaning phenomenon occurs during the above-mentioned spin drying, causing the pattern to collapse or bend. Therefore, a drying device using supercritical fluid has been introduced. Summary of the Invention

[0006] Technical Problem to be Solved

[0007] At the same time, the supercritical drying device is provided with a sealed space to make the pressure and temperature higher than normal pressure and room temperature, and the substrate is processed by flowing supercritical fluid into and out of the sealed space. However, it is necessary to reduce the processing time by shortening the discharge time of the supercritical fluid.

[0008] The technical problem to be solved by the present disclosure is to provide a substrate processing apparatus that can reduce the process time.

[0009] The technical aspects of the present disclosure are not limited to the content described above. Other technical aspects not mentioned will be clearly understood by those of ordinary skill in the art to which the invention related to the present disclosure pertains by referring to the detailed description of the present disclosure given below.

[0010] Means for solving the problem

[0011] According to an aspect of the present disclosure, there is provided a substrate processing apparatus including a container portion in which a substrate processing area is formed. The container portion includes a supply port that supplies a processing fluid to the substrate processing area, and a discharge port that discharges the processing fluid from the substrate processing area; a fluid supply unit that supplies the processing fluid to the substrate processing area; and a discharge unit that discharges the processing fluid from the container portion. The discharge unit includes a main line connected to the discharge port; an extension line branched out from at least one of a first node and a second node of the main line, the extension line including at least one of a first opening or a first one-way valve to adjust the discharge speed; and an auxiliary line branched out from a third node of the main line, in which no opening and one-way valve are formed. Wherein, within a first processing time, the processing fluid is discharged through the extension line, and the processing fluid is not discharged through the auxiliary line, and within a second processing time, the processing fluid is discharged through the auxiliary line.

[0012] According to another aspect of the present disclosure, there is provided a substrate processing apparatus including a container portion in which a substrate processing area is formed. The container portion includes a supply port that supplies a processing fluid to the substrate processing area, and a discharge port that discharges the processing fluid from the substrate processing area; a fluid supply unit that supplies the processing fluid to the substrate processing area; a discharge unit that discharges the processing fluid from the container portion, the discharge unit including a main line connected to the discharge port, an extension line branched out from at least one of a first node and a second node of the main line, and an auxiliary line branched out from a third node of the main line; a first tank connected to the extension line; and a second tank physically separated from the first tank and connected to the auxiliary line.

[0013] According to another aspect of the present disclosure, a substrate processing apparatus is provided, including: a chamber component in which an accommodation space is formed; a control box disposed adjacent to the chamber component; a container unit disposed in the accommodation space, the container unit having a substrate processing area formed to process a substrate, the substrate being treated with an organic solvent for its liquid film, the container unit including a supply port that supplies supercritical carbon dioxide as a supercritical fluid to the substrate processing area, and a discharge port that discharges the supercritical fluid from the substrate processing area; a fluid supply unit that supplies the supercritical fluid to the substrate processing area; and a discharge unit that discharges the supercritical fluid from the container unit, wherein the discharge unit includes: a main line connected to the discharge port; a first pipeline branched from a first node of the main line, the first pipeline including at least one of a first opening or a first one-way valve located in the control box for adjusting a discharge speed; a second pipeline branched from a second node of the main line, the second pipeline including at least one of a second opening or a second one-way valve located in the control box; an auxiliary pipeline branched from a third node of the main line inside the container chamber, no opening or one-way valve being formed in the auxiliary pipeline; a first tank connecting the first pipeline and the second pipeline; and a second tank physically separated from the first tank and connected to the auxiliary pipeline, wherein a first valve disposed in the first pipeline and a second valve disposed in the second pipeline close the flow path when the power is off and open the flow path when the power is on, a third valve disposed in the auxiliary pipeline closes the flow path when the power is on and opens the flow path when the power is off, within a first processing time, the supercritical fluid is discharged through the first pipeline, within a second processing time, the supercritical fluid is discharged through the second pipeline, but within the first processing time and the second processing time, the supercritical fluid is not discharged through the auxiliary pipeline, within a third processing time, the supercritical fluid is discharged through the auxiliary pipeline, but the auxiliary pipeline opens below a critical pressure and discharges the supercritical fluid at a discharge speed faster than a maximum discharge speed of the first pipeline and the second pipeline.

[0014] Specific details of other embodiments are included in the detailed description and the drawings. Brief Description of the Drawings

[0015] The above and other aspects and features of the present disclosure will become more apparent by referring to the detailed description of its exemplary embodiments with reference to the accompanying drawings, wherein, FIG. 1 is a view showing a substrate processing apparatus according to some embodiments of the present disclosure; FIG. 2 is a view showing the inside of a supercritical chamber of a substrate processing apparatus according to some embodiments of the present disclosure; FIG. 3 is a view showing a substrate processing apparatus according to a first embodiment of the present disclosure; FIG. 4 is a view showing a state in which a processing fluid is supplied through a lower supply pipeline in a substrate processing apparatus according to a second embodiment of the present disclosure; FIG. 5 is a view showing a state in which a processing fluid is supplied through an upper supply pipeline and the processing fluid is discharged through a first pipeline in a substrate processing apparatus according to a second embodiment of the present disclosure; FIG. 6 is a view showing a state in which the processing fluid is discharged through a second pipeline in a substrate processing apparatus according to a second embodiment of the present disclosure; FIG. 7 is a view showing a state in which the processing fluid is discharged through an auxiliary pipeline in a substrate processing apparatus according to a second embodiment of the present disclosure; FIG. 8 is a view showing a change in pressure of a substrate processing apparatus according to some embodiments of the present disclosure over time; FIG. 9 is a view showing a change in opening and closing of a flow path of a substrate processing apparatus according to some embodiments of the present disclosure over time; FIG. 10 is a view showing a change in pressure of a substrate processing apparatus of a comparative example over time; FIG. 11 is a flowchart illustrating a substrate processing method of a substrate processing apparatus according to some embodiments of the present disclosure; FIG. 12 is a flowchart illustrating an opening of a flow path of an extension pipeline in a substrate processing method of a substrate processing apparatus according to some embodiments of the present disclosure. Embodiments

[0016] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. The advantages and features of the present disclosure and the methods for achieving these advantages and features will become more apparent from the embodiments described in detail in conjunction with the accompanying drawings. However, the content of the present disclosure is not limited to the disclosed embodiments, but can be implemented in various different ways. These embodiments are provided only to complete the disclosure of the present disclosure and enable those of ordinary skill in the art to understand the scope of the present disclosure. The present disclosure is defined by the scope of the claims. In the description of the drawings, like numerals refer to like elements.

[0017] The terms used in this specification are only for describing specific embodiments and do not limit the present disclosure. In this specification, unless otherwise specified in a phrase, the singular also includes the plural. The use of "comprises and / or comprising" in the specification does not exclude the presence or addition of one or more other components, steps, operations, and / or elements.

[0018] FIG. 1 is a view showing a substrate processing apparatus according to some embodiments of the present disclosure.

[0019] FIG. 2 is a view showing the inside of a supercritical chamber of a substrate processing apparatus according to some embodiments of the present disclosure.

[0020] First, referring to FIG. 1, the substrate processing apparatus 1 may include an index module 20 and a treating module 30. For example, the index module 20 and the treating module 30 may be arranged in a row along the X-axis direction.

[0021] The index module 20 may transport the substrate W from a container (not shown) accommodating the substrate W to the treating module 30, and may accommodate the processed substrate W in the container. For example, the index module 20 may include a loading port 22 and an indexing robot 23. The container accommodating the substrate W may be placed in the loading port 22. The indexing robot 23 may move along a guide rail 24 provided in the Y-axis direction.

[0022] The treating module 30 may include a buffer chamber 31, a transfer chamber 32, a wet processing chamber 33, and a supercritical chamber 34.

[0023] The buffer chamber 31 may be provided between the index module 20 and the transfer chamber 32. However, the present disclosure is not limited thereto. The buffer chamber 31 may store a plurality of substrates W together. The substrates W stored in the buffer chamber 31 may be carried in or out by the indexing robot 23 and the transfer robot 32RB.

[0024] The transfer chamber 32 may transfer the substrate W between the wet processing chamber 33 and the supercritical chamber 34. The longitudinal direction of the transfer chamber 32 may be set parallel to the X-axis direction. The transfer robot 32RB may be provided in the transfer chamber 32. The transfer robot 32RB may have a hand for placing the substrate W. A guide rail 32GR whose longitudinal direction is parallel to the X-axis direction may be provided in the transfer chamber 32, and the transfer robot 32RB may move on the guide rail 32GR.

[0025] The wet processing chamber 33 may process a liquid film on the substrate W. For example, the wet processing chamber 33 may perform a cleaning process on the substrate W and clean the patterned surface of the substrate W. Since the processing liquid discharged from the wet processing chamber 33 is a cleaning liquid, it may include chemicals, deionized water (DIW), and an organic solvent. The organic solvent may include isopropyl alcohol (IPA).

[0026] The supercritical chamber 34 may be disposed adjacent to the wet processing chamber 33. The supercritical chamber 34 may process the substrate W by supplying a supercritical fluid to the substrate W. For example, the supercritical chamber 34 may dry the substrate W by supplying a supercritical fluid to the substrate W processed in the wet processing chamber 33. In other words, the supercritical chamber 34 may dry the organic solvent remaining on the substrate W. For example, the supercritical fluid may be supercritical carbon dioxide.

[0027] Hereinafter, a substrate processing apparatus 100 that performs supercritical drying in the supercritical chamber 34 will be described with reference to the accompanying drawings.

[0028] Referring to FIG. 2, the substrate processing apparatus 100 according to the first embodiment may include a chamber member 34C, a control box 34P, a container unit 110, a substrate support unit 120, a fluid supply unit 130, a discharge unit 140, a heating member 150, and a discharge tank 160.

[0029] A plurality of chamber members 34C are provided not only in the horizontal direction but also in the vertical direction to provide a plurality of supercritical drying spaces. However, the present disclosure is not limited thereto.

[0030] The chamber member 34C may form an accommodation space for accommodating the container unit 110. In other words, the chamber member 34C may be provided as a buffer chamber 31 and a wet processing chamber 33 that divide a space. The chamber member 34C may have an opening (not shown in the figure), and the substrate W moves inside or outside through the opening.

[0031] The control box 34P may be disposed adjacent to the chamber member 34C. For example, the control box 34P may accommodate a storage tank (not shown in the figure) of the fluid supply unit 130 and the discharge unit 140.

[0032] The container unit 110 may provide a substrate processing area 110S (which may be a supercritical processing space) for performing a drying process. The container unit 110 may have an upper main body 111 provided on its upper part and a lower main body 112 provided on its lower part, and the upper main body 111 and the lower main body 112 may be joined to provide the substrate processing area 110S.

[0033] One of the upper main body 111 and the lower main body 112 can move relative to the other, which can be performed by the first driving unit 110MT. For example, the position of the upper main body 111 can be fixed, and the lower main body 112 can move up and down through the first driving unit 110MT. Among them, the first driving unit 110MT can include, for example, an actuator using pneumatic or hydraulic pressure, a linear motor operated by electromagnetic interaction, or a ball guide mechanism.

[0034] When the lower main body 112 is spaced apart from the upper main body 111, the substrate processing area 110S is opened, and in this case, the substrate W can be carried in or out. During this process, the lower main body 112 can be in close contact with the upper main body 111 to seal the substrate processing area 110S from the outside.

[0035] In addition, the container unit 110 can include an upper supply port 111P1, a lower supply port 111P2, and a discharge port 111P3. Among them, the upper supply port 111P1 can form a supply flow path for the processing fluid provided in the upper main body 111, and the lower supply port 111P2 can form a supply flow path for the processing fluid provided in the lower main body 112. The discharge port 111P3 can form a discharge flow path for the processing fluid provided in the lower main body 112.

[0036] The substrate support unit 120 can support the substrate W in a horizontal state in the substrate processing area 110S of the container unit 110. The substrate support unit 120 can support the processing surface of the substrate W facing upward. The substrate support unit 120 can include a first support member 121, a second support member 122, and a flat plate 123.

[0037] The first support member 121 and the second support member 122 can support different areas of the substrate W. The first support member 121 can support the edge area of the substrate W, while the second support member 122 can support the central area of the substrate W.

[0038] For example, the first support member 121 can extend downward from the upper main body 111 but can be bent toward the substrate W. The second support member 122 can be mounted on the flat plate 123. For example, the flat plate 123 can be set as a circular plate. The flat plate 123 can be provided between the lower supply port 111P2 and the first support member 121.

[0039] The flat plate 123 may have a diameter that covers the lower supply port 111P2 and the discharge port 111P3. Accordingly, the flow path of the processing fluid supplied from the lower supply port 111P2 can be bypassed by the flat plate 123. In other words, the flat plate 123 can prevent the supercritical fluid supplied from the lower supply port 111P2 from being directly supplied to the non-processing surface of the substrate W.

[0040] The fluid supply unit 130 can supply a processing fluid, which is a fluid for drying, to the substrate processing area 110S of the container unit 110. For example, the processing fluid can be supplied to the substrate processing area 110S in a supercritical state through a critical temperature and a critical pressure. However, the present disclosure is not limited thereto.

[0041] For example, the fluid supply unit 130 can include a storage tank (not shown in the figure) for storing the fluid, an upper supply pipeline 132, and a lower supply pipeline 134. The upper supply pipeline 132 can be connected to the upper supply port 111P1. The lower supply pipeline 134 can branch out from the upper supply pipeline 132 and be connected to the lower supply port 111P2.

[0042] The processing fluid (which can be supercritical carbon dioxide) stored in the storage tank can be supplied to the substrate processing area 110S through the upper supply pipeline 132 and the lower supply pipeline 134. Each of the upper supply pipeline 132 and the lower supply pipeline 134 can be provided with a valve (not shown in the figure) to adjust the flow rate of the processing fluid.

[0043] The discharge unit 140 can include a main line 142, an extension pipeline, an auxiliary pipeline 145, and a pump (not shown in the figure). According to a modification of the present embodiment, the extension pipeline can include a first pipeline 143 and a second pipeline 144 (see FIG. 3). In other words, the extension pipeline can be provided as multiple pipelines, and each of the first pipeline 143 and the second pipeline 144 can be provided as one or more pipelines.

[0044] Hereinafter, the extension pipeline of the first embodiment will be described as being provided as the first pipeline 143.

[0045] The pump can be provided in at least one of the main line 142, the first pipeline 143, and the auxiliary pipeline 145 for forced discharge. In addition, in the second embodiment, a pump can also be provided in the second pipeline 144.

[0046] The discharge of the processing fluid from the discharge unit 140 is the same as or similar to that of the second embodiment. In other words, the difference between the first embodiment and the second embodiment is that the discharge of the first pipeline 143 in the first embodiment is divided into the first pipeline 143 and the second pipeline 144 in the second embodiment. Since the first embodiment integrates the discharges of the first pipeline 143 and the second pipeline 144 in the second embodiment into one, the description repeated with the first embodiment will be omitted in the description of the second embodiment.

[0047] The heating component 150 can heat the substrate processing area 110S so that the substrate processing area 110S can have or maintain the temperature required for the process. The heating component 150 can heat the supercritical fluid supplied to the substrate processing area 110S above the critical temperature to maintain the supercritical fluid phase.

[0048] The heating component 150 can be embedded in the wall of the lower main body 112 (or the upper main body 111). For example, the heating component 150 can receive electric power from the outside and supply the electric power to a heater that generates heat.

[0049] The discharge tank 160 is a component that discharges the processing fluid (i.e., the reactant) of the dried substrate W. The discharge tank 160 can include a first tank body 161 and a second tank body 163. The discharge tank 160 can store a processing fluid containing an organic solvent (IPA) that is difficult to be arbitrarily discharged into the atmosphere, such as a carcinogen, and can form an accommodation space separated from the outside.

[0050] The first tank body 161 and the second tank body 163 can be physically separated with a gap therebetween. Each of the first tank body 161 and the second tank body 163 can store the supercritical fluid discharged from the substrate processing area 110S.

[0051] The first tank body 161 can be connected to the first pipeline 143 (which can be the first pipeline 143 and the second pipeline 144 in the second embodiment), and then store the supercritical fluid discharged during the supercritical processing of the substrate W. The second tank body 163 can be connected to the auxiliary pipeline 145, and then store the supercritical fluid discharged during the completion of the supercritical processing. In this way, since the first tank body 161 and the second tank body 163 are separated from each other, the problem of insufficient space in the first tank body 161 can be solved in the second tank body 163.

[0052] In addition, each of the first tank 161 and the second tank 163 may be provided with a discharge manifold (not shown in the figure). Since no pressure is released during the discharge process, the differential pressure between the discharge manifold (or the first tank 161) and the extension pipeline 143 may decrease. When the discharge speed slows down due to the decrease in the differential pressure, the discharge time may gradually increase when discharging using the extension pipeline 143 (see Figure 10, continue discharging after T4).

[0053] In this embodiment, since the extension pipeline 143 forming the slow vent and the auxiliary pipeline 145 forming the fast vent are respectively identified by the first tank 161 and the second tank 163, it is possible to prevent the discharge speed from decreasing due to the decrease in the differential pressure between the extension pipeline 143 and the first tank 161, thereby performing and continuing the fast discharge.

[0054] In other words, even if the differential pressure drops due to an increase in the discharge amount and / or back pressure is generated due to a lack of accommodation space in the first tank 161, since the discharge of the auxiliary pipeline 145 is performed in the second tank 163, by preventing phenomena such as re-introduction of particles due to the differential pressure and / or back pressure during the process, quality degradation can be avoided.

[0055] In addition, even if various emergencies may occur in the substrate processing apparatus 100 (for example, the supercritical fluid in the container unit 110 is trapped due to a power outage), it can be coped with by using the auxiliary pipeline 145. This can be achieved by using the third valve 145V provided in the auxiliary pipeline 145 as a valve that opens the flow path when the power is turned off, which will be described below with reference to Figure 3.

[0056] Next, a modification of this embodiment will be described with reference to the accompanying drawings, and redundant descriptions of the same components having the same functions will be omitted.

[0057] Figure 3 is a view showing a substrate processing apparatus according to the first embodiment of the present disclosure. Figures 4 to 7 are views showing the inflow and outflow of the processing fluid of the substrate processing apparatus according to the second embodiment of the present disclosure. Figure 8 is a view showing the change in pressure of the substrate processing apparatus according to some embodiments of the present disclosure over time. Figure 9 is a view showing the change in the opening and closing of the flow path of the substrate processing apparatus according to some embodiments of the present disclosure over time. Figure 10 is a view showing the change in pressure of the substrate processing apparatus of the comparative example over time. Figures 11 and 12 are flowcharts showing the substrate processing method of the substrate processing apparatus according to some embodiments of the present disclosure.

[0058] First, in FIG. 3, the substrate processing apparatus 100 according to the second embodiment may include a chamber member 34C, a control box 34P, a container unit 110, a substrate support unit 120, a fluid supply unit 130, a discharge unit 140, a heating member 150, and a discharge tank 160, which are the same as or similar to those in the first embodiment.

[0059] However, different from the first embodiment, the extension pipeline of the second embodiment includes a first pipeline 143 and a second pipeline 144. In other words, the extension pipeline of the second embodiment may be composed of multiple pipelines.

[0060] The discharge unit 140 of the second embodiment is provided as a main line 142, a first pipeline 143, a second pipeline 144, and an auxiliary pipeline 145, as follows.

[0061] The main line 142 is connected to a discharge port 111P3 provided in the lower main body 112 to discharge the processing fluid from the substrate processing area 110S to the outside. The main line 142 can form an upstream area for discharging the processing fluid by connecting each of the first pipeline 143, the second pipeline 144, and the auxiliary pipeline 145 to the main line 142.

[0062] For example, the main line 142 may include a first node N1, a second node N2, and N3. The main line 142 may form a manifold structure, but the present disclosure is not limited thereto.

[0063] The first pipeline 143 may branch out from the first node N1 of the main line 142. The first pipeline 143 is provided with a first metering valve 143M, a first opening 143F, and / or a first check valve 143C in the control box 34P, and the discharge speed of the processing fluid can be adjusted by controlling these components.

[0064] The second pipeline 144 may branch out from the second node N2 of the main line 142. The second pipeline 144 is provided with a second metering valve 144M, a second opening 144F, and / or a second check valve 144C in the control box 34P, and the discharge speed of the processing fluid can be adjusted by controlling these components.

[0065] The sizes and diameters of the first metering valve 143M, the first opening 143F, the first check valve 143C, the second metering valve 144M, the second opening 144F, and the second check valve 144C may be different from each other.

[0066] For example, the diameters of the first opening 143F and the second opening 144 may be different. In order to achieve a form where the maximum discharge speed values of the first pipeline 143 and the second pipeline 144 are different, diameters may be provided to optimize the discharge speeds of the first pipeline 143 and the second pipeline 144. However, the present disclosure is not limited thereto.

[0067] In addition, for fluid supply and interruption, a first valve V1 may be provided in the first pipeline 143, and a second valve V2 may be provided in the second pipeline 144. For example, the first valve V1 and the second valve V2 may be set as valves that close the flow path when the power is off and open the flow path when the power is on. The valve that opens the flow path when the power is on may have a structure that uses spring force to maintain a closed state. Accordingly, such a valve has a longer lifespan than a valve that closes the flow path when the power is on (maintains a closed state under fluid driving pressure).

[0068] The auxiliary pipeline 145 may branch out from the third node N3 of the main pipeline 142, or may also branch out from the chamber component 34C provided at the front end of the control box 34P. In other words, since the auxiliary pipeline 145 does not branch out from the first pipeline 143 or the second pipeline 144 that form a resistance flow path, discharge can be performed without being affected by the discharge speeds of the first pipeline 143 and the second pipeline 144.

[0069] Since the auxiliary pipeline 145 does not form an opening and a check valve with a resistance flow path, the inner diameter between the rear end of the third valve 145V and the second tank body 163 can be constant. Therefore, the discharge speed of the auxiliary pipeline 145 can be faster than the maximum discharge speeds of the first pipeline 143 and the second pipeline 144. In addition, as described above, the auxiliary pipeline 145 can be discharged separately from the differential pressure drop generated between the first pipeline 143 and / or the second pipeline 144 and the first tank body 161, so that rapid discharge can be achieved.

[0070] As described above, when the first pipeline 143 or the second pipeline 144 performs discharge, the differential pressure between the internal pressure of the substrate processing area 110S and the first tank body 161 (or the discharge manifold) may decrease. The decrease in the differential pressure causes a delay in the discharge using the first pipeline 143 or the second pipeline 144.

[0071] However, since this embodiment uses the auxiliary pipeline 145 connected to the second tank body 163 for discharge, rapid discharge (fast vent) can be performed / continued without discharge delay occurring in the first pipeline 143 or the second pipeline 144.

[0072] The auxiliary pipeline 145 may be provided with a third valve 145V. The third valve 145V of the auxiliary pipeline 145 may be set as a valve that closes the flow path when the power is turned on and opens the flow path when the power is turned off. The auxiliary pipeline 145 may be opened when the power is off, and then the processing fluid in the container portion 110 is discharged.

[0073] In another embodiment, the third valve 145V may be set as a valve that closes the flow path when the power is off and opens the flow path when the power is on, which is the same as or similar to the first valve V1 and / or the second valve V2. In this case, a separate pipeline branched from the fourth node (not shown in the figure) of the main pipeline 142 may be further provided. The separate pipeline may be provided with a valve that opens the flow path when the power is off, and may discharge the fluid from the inside of the container portion 110 in an emergency such as a power failure.

[0074] Correspondingly, the inflow and outflow (supply and discharge) of the processing fluid may be performed by the discharge unit 140 and the fluid supply unit 130.

[0075] Next, a substrate processing method will be described with reference to the accompanying drawings.

[0076] Referring to FIGS. 4 to 9, FIGS. 11 and 12, a substrate processing apparatus 100 including a chamber member 34C, a control box 34P, a container portion 110, a substrate support unit 120, a fluid supply unit 130, a discharge unit 140, a heating member 150, and a discharge tank 160 is provided, and a substrate W is placed in a substrate processing area 110S (S110). Then, during a first processing time and a second processing time, the processing fluid is supplied from the fluid supply unit 130 to the substrate processing area 110S (S120). During the second processing time and a third processing time (i.e., the processing time after the second processing time), the flow path of the extension pipeline is opened (S130). Then, at a fourth processing time, the flow path of the extension pipeline may be closed, and the flow path of the auxiliary pipeline 145 may be opened. Here, it should be noted that for the convenience of explanation and understanding, the time process is divided into the first, second, third, and fourth processing times, and the present disclosure is not limited to such terms. Details will be described below.

[0077] First, the substrate processing apparatus 100 of the first embodiment and the second embodiment may be provided. Next, the substrate processing apparatus 100 of the second embodiment will be described.

[0078] Then, the substrate W can be placed in the substrate processing area 110S (S110). For this purpose, since the upper main body 111 and the lower main body 112 are spaced apart from each other, the substrate processing area 110S can be opened (see FIG. 2). The substrate W can be carried in by the transfer robot 32RB.

[0079] Then, referring to FIGS. 4 and 8 (S120), the processing fluid can be supplied to the container part 110. For example, the processing fluid can be supplied to the substrate processing area 110S through the lower supply pipeline 134 between time 0 and time T1, that is, within the first processing time. Here, the processing fluid passing through the lower supply pipeline 134 and the lower supply port 111P2 can be bypassed and not directly supplied to the non-processing surface of the substrate W by the flat plate 123.

[0080] Among them, when the processing fluid is supplied to the container part 110, supplying from the lower part first is to minimize the leaning phenomenon. For example, when the processing fluid is supplied from the upper part of the substrate W, the influence of the discharge pressure of the processing fluid supplied from the upper part of the substrate W may occur. In other words, due to the discharge pressure of the processing fluid, the leaning phenomenon may occur when the liquid film wetting the substrate W is pushed into the pattern, causing the pattern to collapse or bend. To prevent this problem, the processing fluid can be supplied from the lower part first.

[0081] When the substrate processing area 110S is filled with the processing fluid, the pressure is maintained above the critical pressure (see FIG. 8, higher than the set pressure forming P1), and the supercritical drying process can be performed. Among them, the supercritical drying process can be performed by the processing fluid passing through the upper supply port 111P1. In this case, the lower supply pipeline 134 can be closed.

[0082] That is to say, referring to FIGS. 5, 8, and 9 (S130 and S131), the pressure in the substrate processing area 110S can be maintained during the supercritical drying process (time T1 and time T2, that is, the second processing time). The pressure maintenance can be achieved by supplying the processing fluid supplied from the upper supply port 111P1 while discharging.

[0083] For example, during supercritical drying, the processing fluid can be continuously supplied to the upper part of the substrate W through the upper supply line 132 and the upper supply port 111P1 between time T1 and time T2, so as to discharge the reactants replaced by the processing fluid and the organic solvent (IPA), and dry the substrate W with the new processing fluid. In this case, the discharge operation can be carried out simultaneously to maintain the internal pressure of the substrate processing area 110S. The discharge operation can be carried out by discharging the processing fluid (i.e., the reactant) through the discharge port 111P3. The processing fluid passing through the discharge port 111P3 can be discharged through the first pipeline 143.

[0084] In other words, in the first pipeline 143, the flow path is opened to above the critical pressure so that the substrate processing area 110S remains in the supercritical state in the first state where the substrate W is processed and the supercritical fluid is supplied. However, the amount of the processing fluid that is the same as the amount of the processing fluid supplied from the fluid supply unit 130 can be discharged so that the pressure is not reduced below P1, that is, the pressure set between time T1 and time T2.

[0085] Referring to FIGS. 6, 8, and 9 (S130 and S132), when approaching the completion time of the supercritical drying process, before time T3, for example, between time T2 and time T3, that is, the third processing time, the supply of the processing fluid can be interrupted, and the discharge of the processing fluid from the substrate processing area 110S can continue. For this purpose, the upper supply line 132 and the lower supply line 134 can be closed.

[0086] In addition, the discharge operation can be carried out in the first pipeline 143 or the second pipeline 144. The discharge speed of the first pipeline 143 carried out previously may be different from the discharge speed of the second pipeline 144.

[0087] Hereinafter, the discharge operation during the third processing time, that is, between time T2 and time T3, will be described as being carried out in the second pipeline 144. When the processing fluid is discharged from the substrate processing area 110S, the discharge between time T2 and time T3 can discharge the processing fluid at the first discharge speed so that the supercritical state of the processing fluid around the substrate W is not rapidly released. Among them, the first discharge speed at which the supercritical state is not rapidly released can be carried out by slow vent at a slower speed than the second discharge speed. This is to prevent the reactants remaining on the upper part of the substrate W from falling back to the substrate W by releasing the supercritical state.

[0088] After time T3, the processing fluid can be discharged around the upper part of the substrate W. Therefore, rapid discharge can be performed to shorten the processing time. In this case, the pressure may be lower than the critical pressure P2.

[0089] Referring to FIGS. 7, 8, and 9 (S140), the processing fluid can be discharged from the substrate processing area 110S through the auxiliary pipeline 145 between time T3 and time T4, that is, within the fourth processing time.

[0090] For example, between time T3 and time T4, the auxiliary pipeline 145 can be opened to below the critical pressure P2 for the discharge operation. Since there are no metering valves, openings, and check valves that cause flow path resistance formed as described above, the auxiliary pipeline 145 can have a discharge speed faster than the first discharge speed. In other words, the auxiliary pipeline 145 can discharge the processing fluid at a second discharge speed faster than the maximum discharge speed of the first pipeline 143. The second discharge speed can be achieved by a fast vent faster than the first speed.

[0091] On the other hand, in the substrate processing apparatus of the comparative example, when the supercritical drying is completed, the processing fluid is discharged by the pipeline forming the resistance flow path, and the differential pressure with the discharge manifold decreases during the discharge process, which may lead to a long processing time and delayed discharge.

[0092] When the substrate processing as described above is completed, the processed substrate W can be shipped out. The processed substrate W can be shipped out from the substrate processing area 110S using the transport robot 32RB.

[0093] Although the embodiments of the present disclosure have been described above with reference to the drawings, the present disclosure is not limited to the disclosed embodiments, but can be implemented in various different ways, and those of ordinary skill in the art to which the invention pertains can understand that the present disclosure can be embodied in many different forms without changing its technical idea and basic characteristics. Therefore, the embodiments described herein are merely exemplary and should not be construed as a limitation.

[0094] 1: Substrate processing apparatus 112: Lower main body 111: Upper main body 1: Substrate processing apparatus 20: Alignment module 22: Loading port 23: Alignment robot 24: Guide rail 30: Processing module 31: Buffer chamber 32: Transport chamber 33: Wet processing chamber 34: Supercritical chamber 100: Substrate processing device 110: Container part 111: Upper main body 112: Lower main body 120: Substrate support unit 121: First support 122: Second support 123: Flat plate 130: Fluid supply unit 132: Upper supply pipeline 134: Lower supply pipeline 140: Discharge unit 142: Main line 143: First pipeline 144: Second pipeline 145: Auxiliary pipeline 150: Heating component 160: Drainage tank 161: First tank body 163: Second tank body 110MT: First drive part 110S: Substrate processing area 111P1: Upper supply port 111P2: Lower supply port 111P3: Discharge port 143C: First check valve 143F: First opening 143M: First metering valve 144C: Second check valve 144F: Second check valve 144M: Second metering valve 145V: Third valve 32GR: Guide rail 32RB: Transport robot 34C: Chamber component 34P: Control box N1: First node N2: Second node N3: Second node P1: Pressure P2: Pressure T1~T4: Time t1~t4: Time V1: First Valve V2: Second Valve W: Substrate S110~S140: Steps S131, S135: Steps

Claims

1. A substrate processing apparatus, comprising: A container portion having a substrate processing area, the container portion including a supply port for supplying a processing fluid to the substrate processing area, and a discharge port for discharging the processing fluid from the substrate processing area. A fluid supply unit supplies the processing fluid to the substrate processing area; The system also includes a discharge unit for discharging the processed fluid from the container section. The discharge unit comprises: a main line connected to the discharge port; an extension line branching from at least one of a first node and a second node of the main line, the extension line including at least one of a first opening or a first check valve to regulate the discharge rate, wherein the extension line includes: a first line branching from the first node, the first line including the first opening or the first check valve for regulating the discharge rate, the flow path being open during a first sub-processing time of a first processing time; a second line branching from the second node, the second line including at least one of a second opening or a second check valve for regulating the discharge rate, the flow path being open during a second sub-processing time of the first processing time; and an auxiliary line branching from a third node of the main line, the auxiliary line not having an opening or a check valve. During the first processing time, the processing fluid is discharged through the extension pipeline but not through the auxiliary pipeline. During the second processing time, the processing fluid is discharged through the auxiliary pipeline. To maintain the internal pressure of the substrate processing area, the amount of processing fluid discharged through the first pipeline is within the same range as the amount of processing fluid supplied from the fluid supply unit. When the supply of processing fluid from the fluid supply unit is interrupted, the second pipeline discharges the processing fluid from the substrate processing area. The processing fluid is discharged at a first discharge rate, and the auxiliary pipeline opens below a critical pressure and discharges the processing fluid at a second discharge rate that is faster than the first discharge rate and a maximum discharge rate of the extension pipeline.

2. The substrate processing apparatus as claimed in claim 1, wherein during the second processing time, the processing fluid is not discharged through the extended conduit.

3. The substrate processing apparatus as claimed in claim 1, wherein the extension pipeline is disposed in a chamber component in which the container portion is mounted and a control box adjacent to the chamber component, and the first opening or the first check valve is disposed in the control box.

4. The substrate processing apparatus as claimed in claim 3, wherein the auxiliary pipeline is disposed in the chamber component and the control box, and the auxiliary pipeline in the chamber component is provided with a valve that closes the flow path when the power is on and opens the flow path when the power is off.

5. The substrate processing apparatus as claimed in claim 3, wherein the first node, the second node and the third node are formed in the chamber component.

6. The substrate processing apparatus as claimed in claim 5, wherein the second opening or the second one-way valve is disposed in the control box.

7. The substrate processing apparatus as claimed in claim 1, wherein the second processing time immediately follows the first processing time.

8. The substrate processing apparatus of claim 1, wherein the extension line is connected to a first tank; and the auxiliary line is connected to a second tank physically separated from the first tank.

9. The substrate processing apparatus of claim 1, wherein the extension pipeline is provided with a valve that closes the flow path when the power is off and opens the flow path when the power is on.

10. The substrate processing apparatus of claim 1, wherein the processing fluid is provided as supercritical carbon dioxide, the substrate is provided as a substrate whose liquid film has been treated with an organic solvent, and supercritical drying is performed in the substrate processing region.

11. A substrate processing apparatus, comprising: A container portion having a substrate processing area, the container portion including a supply port for supplying a processing fluid to the substrate processing area, and a discharge port for discharging the processing fluid from the substrate processing area. A fluid supply unit supplies the processing fluid to the substrate processing area; A discharge unit discharges the processed fluid from the container section. The discharge unit includes: a main line connected to the discharge port; an extension line branching from at least one of a first node and a second node of the main line; and an auxiliary line branching from a third node of the main line. The extension line includes: a first line branching from the first node, the first line including a first opening or a first check valve for adjusting the discharge speed, the flow path being open during a first sub-processing time of a first processing time; and a second line branching from the second node, the second line including at least one of a second opening or a second check valve for adjusting the discharge speed, the flow path being open during a second sub-processing time of the first processing time; a first tank connected to the extension line; and a second tank physically separated from the first tank and connected to the auxiliary line. To maintain the internal pressure of the substrate processing area, the amount of processed fluid discharged by the first line is within the same range as the amount of processed fluid supplied from the fluid supply unit. When the supply of the processing fluid from the fluid supply unit is interrupted, the second pipeline discharges the processing fluid from the substrate processing area, wherein the processing fluid is discharged at a first discharge rate, and the auxiliary pipeline opens below a critical pressure and discharges the processing fluid at a second discharge rate that is faster than the first discharge rate and a maximum discharge rate of the extension pipeline.

12. The substrate processing apparatus of claim 11, wherein the first pipeline discharges the processing fluid during a first processing time; the second pipeline discharges the processing fluid during a second processing time; and the auxiliary pipeline discharges the processing fluid during a third processing time.

13. The substrate processing apparatus as claimed in claim 11, wherein: There are no openings or check valves in this auxiliary pipeline.

14. The substrate processing apparatus of claim 11, wherein the processing fluid is provided as supercritical carbon dioxide, the substrate is provided as a substrate whose liquid film has been treated with an organic solvent, and supercritical drying is performed in the substrate processing region.

15. A substrate processing apparatus, comprising: A chamber component having a receiving space formed therein; a control box disposed adjacent to the chamber component; a container portion disposed within the receiving space, the container portion having a substrate processing area formed for processing a substrate, the substrate being treated with an organic solvent to form a liquid film, the container portion including a supply port for supplying supercritical carbon dioxide as a supercritical fluid to the substrate processing area, and a discharge port for discharging the supercritical fluid from the substrate processing area; and a fluid supply unit for supplying the supercritical fluid to the substrate processing area. The system includes a discharge unit for discharging the supercritical fluid from the container section. The discharge unit comprises: a main line connected to the discharge port; a first pipeline branching from a first node of the main line, the first pipeline including at least one of a first opening or a first check valve located within the control box for regulating the discharge rate; a second pipeline branching from a second node of the main line, the second pipeline including at least one of a second opening or a second check valve located within the control box; an auxiliary pipeline branching from a third node of the main line within the chamber component, the auxiliary pipeline not having an opening or check valve; a first tank connecting the first pipeline and the second pipeline; and a second tank physically separated from the first tank and connected to the auxiliary pipeline, wherein a first valve in the first pipeline and a second valve in the second pipeline close the flow path when the power is off and open the flow path when the power is on. A third valve installed in the auxiliary pipeline closes the flow path when the power is on and opens the flow path when the power is off. During a first processing time, the supercritical fluid is discharged through the first pipeline. During a second processing time, the supercritical fluid is discharged through the second pipeline. However, during both the first and second processing times, the supercritical fluid is not discharged through the auxiliary pipeline. During a third processing time, the supercritical fluid is discharged through the auxiliary pipeline, but the auxiliary pipeline is opened below a critical pressure and discharges the supercritical fluid at a discharge rate faster than the maximum discharge rate of the first and second pipelines.

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