Plasma processing apparatus with post plasma gas injection in a separation grid

Abstract

A plasma processing apparatus is provided. The plasma processing apparatus includes a plasma chamber and a processing chamber. The processing chamber includes a substrate support operable to support a substrate. The plasma processing apparatus further includes a separation grid separating the plasma chamber and the processing chamber. The separation grid includes a gas delivery system. The gas delivery system defines a channel, an inlet, and a plurality of outlets in fluid communication with the inlet via the channel. The gas delivery system is configured to reduce non-uniformity associated with processing procedures performed on the substrate.

Description

Technical Field [Claim of priority]

[0001] This application is based upon and claims priority to U.S. Provisional Patent Application No. 62 / 796,746, filed on January 25, 2019, entitled “Post Plasma Gas Injection in a Separation Grid,” the contents of which are incorporated herein by reference. This application also is based upon and claims priority to U.S. Provisional Patent Application No. 62 / 861,423, filed on June 14, 2019, entitled “Post Plasma Gas Injection in a Separation Grid,” the contents of which are incorporated herein by reference.

[0002] The present disclosure generally relates to a plasma processing apparatus; and more particularly to post-plasma gas injection into a separation grid in a plasma processing apparatus. Prior Art

[0003] Plasma processing is widely used in the semiconductor industry for deposition, etching, resist removal, and related processes on semiconductor wafers and other workpieces. Plasma sources (e.g., microwave, ECR, induction, etc.) are often used in plasma processing to generate high-density plasma and reactive species for processing the workpiece. Plasma processing equipment can be used for stripping processes, such as photoresist removal. A plasma stripping tool may include a plasma chamber in which the plasma is generated and a separate processing chamber in which the workpiece is processed. The processing chamber may be "downstream" of the plasma chamber so that the workpiece is not directly exposed to the plasma. A separation grid may be used to separate the processing chamber from the plasma chamber. The separation grid may be transparent to neutral species but impervious to charged particles from the plasma. The separation grid may include one or more sheets of material with holes. Summary of the Invention

[0004] Aspects and advantages of the embodiments of the present disclosure will be partially set forth in the following description, or may be learned from the description, or may be learned through practice of the embodiments.

[0005] A plasma processing apparatus is provided. The plasma processing apparatus includes a plasma chamber and a processing chamber. The processing chamber includes a workpiece support operable to support a workpiece. The plasma processing apparatus further includes a separation grid separating the plasma chamber from the processing chamber. The separation grid includes a gas delivery system. The gas delivery system defines a channel, an inlet, and a plurality of outlets in fluid communication with the inlet via the channel. The gas delivery system is configured to reduce non-uniformity associated with a processing procedure performed on a substrate.

[0006] In another embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a plasma chamber and a processing chamber. The processing chamber includes a substrate holder operable to support a substrate. The plasma processing apparatus further includes a separation grid and a plurality of independently controllable valves. The separation grid separates the plasma chamber from the processing chamber. The separation grid includes a gas delivery system. The gas delivery system defines a plurality of channels, a plurality of inlets, and a plurality of outlets. Each of the plurality of inlets is coupled to a corresponding one of the plurality of independently controllable valves. Furthermore, the gas delivery system is configured such that gas exiting the channels via the plurality of outlets reduces non-uniformity associated with a processing procedure performed on the substrate.

[0007] In yet another aspect, a plasma processing apparatus is provided. The plasma processing apparatus includes a processing chamber and a workpiece support within the processing chamber. The workpiece support is operable to support a first workpiece and a second workpiece, and the workpiece support includes a first processing station and a second processing station. The first processing station is configured to support the first workpiece. The second processing station is configured to support the second workpiece. The plasma processing apparatus includes a pump port configured to pump gas from the processing stations. The pump port is located below the workpiece support. The workpiece support defines an opening between the first processing station and the second processing station. The opening provides a path for pumping gas from the processing chamber to the pump port. The opening includes a plurality of holes.

[0008] These and other features, aspects, and advantages of various embodiments will be better understood with reference to the following description and the accompanying claims. The accompanying drawings, which are incorporated into and constitute a part of the specification, illustrate embodiments of the present disclosure and, together with the description, serve to explain the relevant principles. Simple diagram description

[0009] A complete and enabling disclosure for one skilled in the art is set forth in greater detail in the remainder of the specification, including reference to the accompanying drawings, in which:

[0010] FIG1 illustrates an exemplary plasma processing apparatus according to an exemplary embodiment of the present invention;

[0011] Figure 2 illustrates post-plasma gas injection according to an exemplary embodiment of the present invention;

[0012] Figure 3 shows a top view of a separation grid of a plasma processing apparatus according to an exemplary embodiment of the present invention;

[0013] Figure 4 illustrates a top view of a gas delivery system for separating a grid according to an exemplary embodiment of the present invention;

[0014] Figure 5 illustrates the gas flow through the gas delivery system of the separation grid according to an exemplary embodiment of the present invention;

[0015] Figure 6 shows a top view of a gas delivery system according to an exemplary embodiment of the present invention;

[0016] Figure 7 shows a top view of a gas delivery system according to an exemplary embodiment of the present invention;

[0017] Figure 8 shows a top view of a gas delivery system according to an exemplary embodiment of the present invention;

[0018] Figure 9 shows a top view of a gas delivery system according to an exemplary embodiment of the present invention;

[0019] Figure 10 shows a top view of a gas delivery system according to an exemplary embodiment of the present invention;

[0020] Figure 11 shows a top view of a gas delivery system according to an exemplary embodiment of the present invention;

[0021] Figure 12 shows a top view of a gas delivery system according to an exemplary embodiment of the present invention;

[0022] FIG13 illustrates a gas flow through a gas delivery system of a separation grid according to an exemplary embodiment of the present invention;

[0023] Figure 14 shows a top view of a gas delivery system according to an exemplary embodiment of the present invention;

[0024] Figure 15 shows a block diagram of a component of a separation grid according to an exemplary embodiment of the present invention;

[0025] FIG16 illustrates a gas flow through a gas delivery system of a separation grid according to an exemplary embodiment of the present invention;

[0026] Figure 17 shows a top view of a gas delivery system according to an exemplary embodiment of the present invention;

[0027] Figure 18 shows a top view of a gas delivery system according to an exemplary embodiment of the present invention;

[0028] Figure 19 shows a top view of a gas delivery system according to an exemplary embodiment of the present invention;

[0029] Figure 20 shows a top view of a gas delivery system according to an exemplary embodiment of the present invention;

[0030] Figure 21 illustrates an exemplary dual-chamber plasma processing apparatus according to an exemplary embodiment of the present invention;

[0031] Figure 22 shows a plan view of an exemplary processing chamber of a dual-chamber plasma processing apparatus according to an exemplary embodiment of the present invention;

[0032] Figure 23 shows a plan view of an exemplary processing chamber of a dual-chamber plasma processing apparatus according to an exemplary embodiment of the present invention;

[0033] Figure 24 shows an exemplary opening according to an exemplary embodiment of the present invention;

[0034] Figure 25 shows an exemplary opening according to an exemplary embodiment of the present invention;

[0035] FIG. 26 illustrates an exemplary opening according to an exemplary embodiment of the present invention; and

[0036] FIG. 27 illustrates an exemplary opening according to an exemplary embodiment of the present invention. Implementation Method

[0037] Reference will now be made in detail to the embodiments, one or more examples of which are illustrated in the accompanying drawings. Each example is presented by way of explanation of the embodiments, not limitation of the present disclosure. In fact, those skilled in the art will readily appreciate that various modifications and variations can be made to the embodiments without departing from the scope or spirit of the present disclosure. For example, a feature illustrated or described as part of one embodiment can be used with another embodiment to produce a still further embodiment. Therefore, aspects of the present disclosure are intended to cover such modifications and variations.

[0038] An exemplary embodiment of the present disclosure relates to a plasma processing apparatus. The plasma processing apparatus may include a plasma chamber in which a plasma source (such as an inductively coupled plasma source) is used to generate plasma. The plasma processing apparatus may include a processing chamber. The processing chamber may include a workpiece support (e.g., a susceptor) to support a workpiece. The plasma chamber and the processing chamber may be separated by a separation grid. According to an exemplary embodiment of the present disclosure, the plasma processing apparatus may include a gas inlet for injecting a gas into a plasma mixture behind or below the separation grid (e.g., post plasma gas injection (PPGI)).

[0039] For example, in some embodiments, the separation grid may include a gas delivery system. The gas delivery system may define a channel, an inlet, and a plurality of outlets. Each of the plurality of outlets may be in fluid communication with the inlet via the channel. In this manner, gases associated with post-plasma gas injection may enter and exit the channel via the inlet and the outlets, respectively. As discussed in more detail below, the gas delivery system of the separation grid may be configured to reduce or eliminate non-uniformities associated with a process (e.g., an etch process, a strip process, a surface treatment process, etc.) performed on a workpiece disposed in a processing chamber.

[0040] In some implementations, the channel portion defined by the first portion of the gas delivery system can differ from the channel portion defined by the second portion of the gas delivery system. For example, the width of the channel portion defined by the first portion can be less than the width of the channel portion defined by the second portion. In this manner, the channel portion defined by the first portion can be narrower than the channel portion defined by the second portion. In alternative implementations, the width of the channel portion defined by the first portion can be greater than the width of the channel portion defined by the second portion. In this manner, the channel portion defined by the first portion can be wider than the channel portion defined by the second portion.

[0041] In some implementations, an inlet may be defined by a first portion of the gas delivery system. Alternatively, the plurality of outlets may include a first set of outlets and a second set of outlets. The first set of outlets may be defined by the first portion. The second set of outlets may be defined by the second portion. In some implementations, the diameter of the first set of outlets may differ from the diameter of the second set of outlets. For example, the diameter of each outlet included in the first set of outlets may be smaller (e.g., smaller) than the diameter of each outlet included in the second set of outlets. In this manner, the volume of gas exiting the channel via the outlet defined by the second portion of the gas delivery system may be greater than the volume of gas exiting the channel via the outlet defined by the first portion of the gas delivery system. In an alternative implementation, the diameter of each outlet included in the first set of outlets may be greater (e.g., larger) than the diameter of each outlet included in the second set of outlets. In this manner, the volume of gas exiting the channel via the outlet defined by the first portion of the gas delivery system may be greater than the volume of gas exiting the channel via the outlet defined by the second portion of the gas delivery system.

[0042] In some implementations, the number of outlets defined by the first portion of the gas delivery system can be less than the number of outlets defined by the second portion of the gas delivery system. In this manner, the volume of gas that exits the channel through the outlets defined by the second portion of the gas delivery system can be greater than the volume of gas that exits the channel through the outlets defined by the first portion of the gas delivery system. In alternative implementations, the number of outlets defined by the first portion of the gas delivery system can be greater than the number of outlets defined by the second portion of the gas delivery system. In this manner, the volume of gas that exits the channel through the outlets defined by the first portion of the gas delivery system can be greater than the volume of gas that exits the channel through the outlets defined by the second portion of the gas delivery system.

[0043] In some implementations, a barrier material can be placed above one or more of the plurality of outlets. For example, the barrier material can be placed above an outlet defined by a first portion of the gas delivery system. Consequently, gas within the channel must exit the channel via an outlet defined by a second portion of the gas delivery system. Alternatively, the barrier material can be placed above an outlet defined by the second portion, so that gas within the channel must exit the channel via an outlet defined by the first portion. In this manner, the gas flow exiting the channel can be asymmetric, which may be desirable in some cases to reduce non-uniformities associated with processing performed on a workpiece.

[0044] In some implementations, the gas delivery system may include a wall that separates a channel into a first channel and a second channel. The wall may define a plurality of openings to provide fluid communication between the first channel and the second channel. In this manner, gas entering the first channel via the inlet may enter the second channel in a uniform manner. The gas may then exit the second channel via the plurality of openings in a more uniform manner, which may reduce or eliminate non-uniformities associated with processing performed on the workpiece.

[0045] In some implementations, the gas delivery system may define a plurality of channels. For example, the gas delivery system may define a first channel, a second channel, a third channel, and a fourth channel. However, it should be understood that the gas delivery system can be configured to define more or fewer channels. The gas delivery system may further define a plurality of inlets. For example, the gas delivery system may define a first inlet, a second inlet, a third inlet, and a fourth inlet. However, it should be understood that the gas delivery system can define more or fewer inlets. The first inlet may be in fluid communication with the first channel. The second inlet may be in fluid communication with the second channel. The third inlet may be in fluid communication with the third channel. The fourth inlet may be in fluid communication with the fourth channel.

[0046] In some implementations, the gas delivery system may define a plurality of outlets. For example, the gas delivery system may define a first plurality of outlets, a second plurality of outlets, a third plurality of outlets, and a fourth plurality of outlets. The first plurality of outlets may be in fluid communication with the first inlet via a first channel. The second plurality of outlets may be in fluid communication with the second inlet via a second channel. The third plurality of outlets may be in fluid communication with the third inlet via a third channel. The fourth plurality of outlets may be in fluid communication with the fourth inlet via a fourth channel. As discussed in greater detail below, the flow of gas into the plurality of channels (e.g., the first channel, the second channel, the third channel, and the fourth channel) may be controlled to control the uniformity of a process performed on a workpiece (azimuthal uniformity control).

[0047] In some implementations, a plasma processing apparatus may include a plurality of independently controlled valves configured to regulate gas flow into a plurality of channels defined by a gas delivery system. For example, the plurality of valves may include a first valve, a second valve, a third valve, and a fourth valve. However, it should be understood that more or fewer valves may be used. In some implementations, each of the plurality of valves (e.g., the first valve, the second valve, the third valve, and the fourth valve) is connected between a gas supply and a corresponding inlet of the plurality of inlets. For example, the first valve is connected between the gas supply and the first inlet. The second valve is coupled between the gas supply and the second inlet. The third valve is connected between the gas supply and the third inlet. Finally, the fourth valve is connected between the gas supply and the fourth inlet.

[0048] In some implementations, each valve of a plurality of valves can be moved between an open position and a closed position (e.g., or somewhere in between) to regulate the flow of gas into a corresponding gas delivery system channel. For example, when a first valve is in an open position, gas can flow from a gas supply to a first channel. Conversely, when the first valve is in a closed position, gas cannot flow from the gas supply to the first channel. Thus, the position of the plurality of valves (e.g., open or closed) can be controlled as needed to control how gas is supplied to the gas delivery system. In this way, gas can be directed into or out of one or more channels as needed to reduce or eliminate non-uniformities associated with processing performed on a workpiece.

[0049] The separation grid according to the present invention provides numerous technical benefits. For example, the separation grid can be configured to reduce or eliminate non-uniformities associated with a process performed on a workpiece within a processing chamber. In this way, the process can be improved and / or more precisely controlled.

[0050] For purposes of illustration and discussion, exemplary aspects of the present disclosure will be discussed with reference to processing semiconductor wafer workpieces. Those skilled in the art, utilizing the disclosure provided herein, will understand that aspects of the present disclosure can be used in conjunction with processing other workpieces without departing from the scope of the present disclosure. Exemplary workpieces include glass sheets, films, ribbons, solar panels, mirrors, liquid crystal displays, semiconductor wafers, and the like. As used herein, the word "about" used in conjunction with a numerical value may mean within 20% of the stated value. [Demonstration of a plasma processing apparatus equipped with a separation grid containing a gas delivery system]

[0051] Referring now to the drawings, FIG. 1 illustrates a plasma processing apparatus 100 according to an exemplary embodiment of the present disclosure. The plasma processing apparatus 100 includes a processing chamber 110 and a plasma chamber 120. The processing chamber 110 can be separated from the plasma chamber 120 by a separation grid 200 of the plasma processing apparatus 100. The processing chamber 110 can further include a workpiece support or pedestal 112 disposed within the processing chamber 110. The pedestal 112 can be configured to support a workpiece 114.

[0052] The plasma chamber 120 can include sidewalls 122 formed of any suitable dielectric material, such as quartz. The plasma chamber 120 can further include a top plate 124 at least partially supported by the sidewalls 122. As shown, at least a portion of an interior 125 of the plasma chamber 120 can be defined by the separator grid 200, the sidewalls 122, and the top plate 124.

[0053] The plasma processing apparatus 100 may include an induction coil 130 disposed adjacent to an outer surface of a sidewall 122 of a plasma chamber 120. The induction coil 130 may be coupled to an RF power generator 134 via an appropriate matching network 132. Reactants or carrier gases may be provided to the interior 125 of the plasma chamber 120 via a gas supply 150. When the induction coil 130 is energized with RF power from the RF power generator 134, a substantially inductive plasma may be induced in the plasma chamber 120. In a particular embodiment, the plasma processing apparatus 100 may include a grounded Faraday shield 128 to reduce capacitive coupling of the induction coil 130 to the plasma.

[0054] In some implementations, the induced plasma (i.e., the plasma generation region) and desired particles (e.g., neutral particles) can flow from the plasma chamber 120 through a plurality of holes (not shown) defined by the separation grid 200 to the workpiece 114. The separation grid 200 can be used to perform ion filtering of particles generated by the plasma in the plasma chamber 120. The particles passing through the separation grid 200 can be exposed to the workpiece 114 (e.g., a semiconductor wafer) in the processing chamber 110 for surface processing of the workpiece (e.g., photoresist removal).

[0055] More specifically, in some embodiments, the separation grid 200 may be transparent to neutral species but impermeable to charged particles from the plasma. For example, charged particles or ions may recombine on the walls of the separation grid 200. The separation grid 200 may include one or more material grids having holes distributed according to the hole pattern of each material. The hole pattern of each grid can be the same or different.

[0056] FIG2 illustrates an exemplary splitter grid 116 configured for post-plasma gas injection according to an exemplary embodiment of the present disclosure. More particularly, the splitter grid assembly 116 includes a first grid plate 116a and a second grid plate 116b disposed in parallel for ion / UV filtering.

[0057] The first grid plate 116a and the second grid plate 116b may be parallel to each other. The first grid plate 116a may have a first grid pattern with a plurality of holes. The second grid plate 116b may have a second grid pattern with a plurality of holes. The first grid pattern may be the same as or different from the second grid pattern. Charged particles may recombine on the walls of the holes in each grid plate 116a, 116b of the separation grid 116. Neutral species (such as free radicals) may flow relatively freely through the holes in the first grid plate 116a and the second grid plate 116b.

[0058] Following the second grid plate 116b, a gas injection source 117 (e.g., a gas port) can be configured to allow gas to enter the free radicals. The free radicals can then pass through the third grid plate 116c to be exposed to the workpiece. The gas can be used for various purposes. For example, in some embodiments, the gas can be a neutral or inert gas (e.g., nitrogen, helium, or argon). The gas can be used to cool the free radicals to control their energy as they pass through the separation grid. In some embodiments, a vaporized solvent can be injected into the separation grid 116 via the gas injection source 117 or another gas injection source (not shown). In some embodiments, desired molecules (e.g., hydrocarbon molecules) can be injected into the free radicals.

[0059] The post-plasma gas injection illustrated in FIG. 2 is provided for illustrative purposes. Those skilled in the art will appreciate that various configurations of one or more gas ports within a separation grid for implementing post-plasma gas injection according to exemplary embodiments of the present disclosure may be employed. The one or more gas ports may be arranged between any grid plates; gas or molecules may be injected in any direction; and may be used to control uniformity across multiple post-plasma gas injection zones within the separation grid.

[0060] It should be understood that the separation grid 116 may include any suitable number of grid panels. For example, as shown in FIG. 2 , the separation grid 116 may include three separation grid panels (e.g., a first grid panel 116a, a second grid panel 116b, and a third grid panel 116c). In alternative implementations, the separation grid 116 may include more or fewer grid panels. For example, in some implementations, the separation grid 116 may include a first grid panel 116a and a third grid panel 116c. In such implementations, the gas injection source 117 may be configured to allow gas to enter the free radicals flowing from the first grid panel 116a to the third grid panel 116c.

[0061] For example, in some exemplary embodiments, a separation grid may be injected with gas or molecules in a central region or a peripheral region. A greater number of gas injection regions may be provided within the separation grid without departing from the scope of the present disclosure, such as three, four, five, six, and so forth. The regions may be divided in any manner, such as radially, azimuthally, or in any other manner. For example, in one example, post-plasma gas injection within the separation grid may be divided into a central region and four azimuth regions (e.g., quadrants) surrounding the separation grid.

[0062] Referring to FIG. 3 , an exemplary embodiment of a separation grid 200 according to the present disclosure is provided. As shown, the separation grid 200 may have a ring shape. However, it should be understood that the separation grid 200 may have any suitable shape. For example, in some implementations, the separation grid 200 may have a rectangular or oblong shape.

[0063] As shown, the separation grid 200 can define a coordinate system including a radial direction R and a circumferential direction C. The separation grid 200 can have a gas delivery system 202. The separation grid 200 can also include a surface 204 disposed within an opening 206 ( FIG. 4 ) defined by the gas delivery system 202. As shown, the surface 204 can define a plurality of holes 208. In this manner, neutral radicals within the interior 125 of the plasma chamber 120 can flow into the processing chamber 110 through the holes 208.

[0064] In some implementations, the gas delivery system 202 of the separation grid 200 can define a channel 210, an inlet 220, and a plurality of outlets 230. Each of the plurality of outlets 230 can be in fluid communication with the inlet 220 via the channel 210. Referring generally to FIG. 5 , in some implementations, the gas supply 150 can be in fluid communication with the inlet 220 of the gas delivery system 202 via one or more conduits. In this manner, gas 300 from the gas supply 150 can be provided to the gas delivery system 202 of the separation grid 200. In particular, the gas 300 can enter and exit the channel 210 of the gas delivery system 202 via the inlet 220 and the plurality of outlets 230, respectively. In some implementations, the gas 300 exiting the channel 210 via the plurality of outlets 230 can flow into the separation grid and / or the processing chamber 110 ( FIG. 1 ) for subsequent plasma gas injection into the mixture of neutral radicals flowing through the separation grid. As will be discussed below, the uniformity of the gas 300 exiting the passage 210 through the plurality of outlets 230 may be controlled to improve the uniformity of a process (e.g., an etch process, a strip process, a surface treatment process, etc.) performed on a workpiece 114 ( FIG. 1 ) disposed within the processing chamber 110 .

[0065] Referring now to FIG. 6 , one embodiment of a gas delivery system 202 for separating grid 200 ( FIG. 3 ) is provided. As shown, inlet 220 can be defined by a first portion of gas delivery system 202 (e.g., above the dashed line along radial direction R). As will be discussed in greater detail below, the portion of channel 210 defined by the first portion of gas delivery system 202 can be different from the portion of channel 210 defined by the second portion of gas delivery system 202 (e.g., below the dashed line along radial direction R).

[0066] In some implementations, the width of the portion of channel 210 defined by the first portion can be less than the width of the portion of channel 210 defined by the second portion. In this way, the portion of channel 210 defined by the first portion can be narrower than the portion of channel 210 defined by the second portion. In alternative implementations, the width of the portion of channel 210 defined by the first portion can be greater than the width of the portion of channel 210 defined by the second portion. In this way, the portion of channel 210 defined by the first portion can be wider than the portion of channel 210 defined by the second portion.

[0067] Referring now to FIG. 7 , another embodiment of a gas delivery system 202 for separating grid 200 ( FIG. 3 ) is provided. As shown, an inlet 220 can be defined by a first portion of gas delivery system 202 (e.g., above the dashed line along radial direction R). As will be discussed in greater detail below, the diameter of an outlet 230 defined by the first portion of gas delivery system 202 can be different than the diameter of an outlet 230 defined by a second portion of gas delivery system 202 (e.g., below the dashed line along radial direction R).

[0068] In some implementations, the plurality of outlets 230 may include a first set of outlets and a second set of outlets. The first set of outlets may be defined by a first portion of the gas delivery system 202. The second set of outlets may be defined by a second portion of the gas delivery system 202. In some implementations, the diameter of the first set of outlets may be smaller (e.g., smaller) than the diameter of the second set of outlets. In this manner, the volume of gas 300 exiting the channel 210 via the second set of outlets may be greater (e.g., greater) than the volume of gas exiting the channel 210 via the first set of outlets. In alternative implementations, the diameter of the first set of outlets may be greater (e.g., greater) than the diameter of the second set of outlets. In this manner, the volume of gas 300 exiting the channel 210 via the first set of outlets may be greater than the volume of gas exiting the channel 210 via the second set of outlets.

[0069] Referring now to FIG. 8 , another embodiment of a gas delivery system 202 for separating grid 200 ( FIG. 3 ) is provided. As shown, inlet 220 can be defined by a first portion of gas delivery system 202 (e.g., above the dashed line along radial direction R). As will be discussed in more detail below, the number of outlets 230 defined by the first portion of the gas delivery system can be the same as the number of outlets 230 defined by the second portion of the gas delivery system (e.g., below the dashed line along radial direction R).

[0070] In some implementations, the number of outlets 230 defined by the first portion of the gas delivery system can be less than the number of outlets 230 defined by the second portion of the gas delivery system. In this manner, the amount of gas 300 that exits the channel 210 via the outlets 230 defined by the second portion of the gas delivery system 202 can be greater than the amount of gas 300 that exits the channel 210 via the outlets 230 defined by the first portion of the gas delivery system 202. In alternative implementations, the number of outlets 230 defined by the first portion of the gas delivery system 202 can be greater than the number of outlets 230 defined by the second portion of the gas delivery system 202. In this manner, the amount of gas 300 that exits the channel 210 via the outlets 230 defined by the first portion of the gas delivery system 202 can be greater than the amount of gas 300 that exits the channel 210 via the outlets 230 defined by the second portion of the gas delivery system 202.

[0071] Referring now to Figures 9-12 , various embodiments of separation grid 200 ( FIG. 3 ) according to exemplary embodiments of the present disclosure are provided. As shown, inlet 220 can be defined by a first portion of gas delivery system 202 (e.g., located above the dashed line along radial direction R). As will be discussed in greater detail below, one or more of the plurality of outlets 230 can be blocked to regulate the manner in which gas 300 exits 210.

[0072] As shown in FIG9 , barrier material 400 can be placed above outlet 230 defined by the third portion of gas delivery system 202 (e.g., to the left of the dashed line). In this manner, gas can only exit channel 210 through outlet 230 defined by the fourth portion of gas delivery system 202 (e.g., to the right of the dashed line). Alternatively, as shown in FIG10 , barrier material 400 can be placed above outlet 230 defined by the fourth portion of gas delivery system 202. In this manner, gas can only exit channel 210 through outlet 230 defined by the third portion of gas delivery system 202.

[0073] As shown in FIG. 11 , barrier material 400 can be positioned above outlet 230 defined by a first portion of gas delivery system 202 (e.g., above the dashed line along radial direction R). In this manner, gas can only exit channel 210 through outlet 230 defined by a second portion of gas delivery system 202 (e.g., below the dashed line along radial direction R). Alternatively, barrier material 400 can be positioned above outlet 230 defined by the second portion of gas delivery system 202. In this manner, gas can only exit channel 210 through outlet 230 defined by the first portion of gas delivery system 202.

[0074] With reference to FIGS. 13 and 14 , another embodiment of a gas delivery system 202 for separating grid 200 ( FIG. 3 ) according to exemplary embodiments of the present disclosure is provided. The gas delivery system 202 depicted in FIGS. 13 and 14 may include the same or similar components as the gas delivery system 202 depicted in FIGS. 3-5 . For example, the gas delivery system 202 may define an inlet 220 and a plurality of outlets 230 . However, in contrast to the gas delivery system 202 depicted in FIGS. 3-5 , the gas delivery system 202 depicted in FIGS. 13 and 14 is divided into a first channel 212 and a second channel 214 . As will be discussed in greater detail below, dividing the interior of the gas delivery system 202 into the first channel 212 and the second channel 214 may improve the uniformity of processing performed on the workpiece 114 ( FIG. 1 ) disposed within the processing chamber 110 .

[0075] As shown, the inlet 220 can be in fluid communication with the first channel 212. In this manner, the gas 300 can enter the first channel 212 via the inlet 220. The gas 300 can then flow from the first channel 212 to the second channel 214 via the plurality of openings 242 in the wall 240, which divides the interior of the gas delivery system into the first channel 212 and the second channel 214. As shown, the plurality of openings 242 are spaced apart from each other along the circumferential direction C. In some implementations, the spacing between adjacent openings 242 can be uniform. In this manner, the gas 300 can enter the second channel 214 in a more uniform manner. The gas 300 can then exit the second channel 214 via the plurality of outlets 230 and flow into the separation grid 200 and / or the processing chamber 110 ( FIG. 1 ).

[0076] Referring now to FIG. 15 , another embodiment of a gas delivery system 202 for separating grid 200 ( FIG. 2 ) is provided. As shown, gas delivery system 202 may define a plurality of channels. For example, gas delivery system 202 may define a first channel 510, a second channel 512, a third channel 514, and a fourth channel 516. However, it should be understood that gas delivery system 202 may be configured to define more or fewer channels.

[0077] As shown, the gas delivery system 202 may define a plurality of inlets. For example, the gas delivery system 202 may define a first inlet 520, a second inlet 522, a third inlet 524, and a fourth inlet 526. However, it should be understood that the gas delivery system 202 may define more or fewer inlets. The first inlet 520 may be in fluid communication with the first channel 510. The second inlet 522 may be in fluid communication with the second channel 512. The third inlet 524 may be in fluid communication with the third channel 514. The fourth inlet 526 may be in fluid communication with the fourth channel 516.

[0078] The gas delivery system 202 may define a plurality of outlets. For example, the gas delivery system 202 may define a first plurality of outlets 530, a second plurality of outlets 532, a third plurality of outlets 534, and a fourth plurality of outlets 536. The first plurality of outlets 530 may be in fluid communication with the first inlet 520 via the first channel 510. The second plurality of outlets 532 may be in fluid communication with the second inlet 522 via the second channel 512. The third plurality of outlets 534 may be in fluid communication with the third inlet 524 via the third channel 514. The fourth plurality of outlets 536 may be in fluid communication with the fourth inlet 526 via the fourth channel 516. As will be discussed in greater detail below, the flow of gas 300 into the plurality of channels (e.g., the first channel 510, the second channel 512, the third channel 514, and the fourth channel 516) may be controlled to improve the uniformity of a plasma etching process performed on the workpiece 114 ( FIG. 1 ).

[0079] Referring to FIG. 16 , a plurality of independently controlled valves may be used to regulate the flow of gas into a plurality of channels defined by the gas delivery system 202 ( FIG. 15 ). For example, the plurality of valves may include a first valve 540 , a second valve 542 , a third valve 544 , and a fourth valve 546 . However, it should be understood that more or fewer valves may be used. In some implementations, each of the plurality of valves (e.g., the first valve 540 , the second valve 542 , the third valve 544 , and the fourth valve 546 ) is connected between the gas supply 150 and a corresponding one of the plurality of inlets. For example, the first valve 540 may be connected between the gas supply 150 and the first inlet 520 . The second valve 542 may be connected between the gas supply 150 and the second inlet 522 . The third valve 544 may be connected between the gas supply 150 and the third inlet 524 . The fourth valve 546 may be connected between the gas supply 150 and the fourth inlet 526 . As will be discussed in greater detail below, each valve 540, 542, 544, 546 of the plurality of valves is movable between an open position and a closed position to regulate the flow of gas into the corresponding channel 510, 512, 514, 516 of the gas delivery system 202, allowing for post plasma individually controlled gas injection (PPIGI).

[0080] Referring to FIG. 17 , first valve 540 ( FIG. 16 ) can be actuated to or toward an open position to allow gas 300 to flow from gas supply 150 to first channel 510 defined by gas delivery system 202 . Specifically, gas 300 can enter first channel 510 via first inlet 520 . Gas 300 can then exit first channel 510 via a first plurality of outlets 530 that are in fluid communication with first inlet 520 through first channel 510 . In the embodiment depicted in FIG. 17 , only first valve 540 is in the open position. Therefore, gas 300 is not provided to any of the remaining channels (e.g., second channel 512 , third channel 514 , and fourth channel 516 ).

[0081] Referring now to FIG. 18 , the second valve 542 ( FIG. 16 ) can be actuated to or toward an open position to allow gas 300 to flow from the gas supply 150 to the second channel 512 defined by the gas delivery system 202 . Specifically, the gas 300 can enter the second channel 512 via the second inlet 522 . The gas 300 can then exit the second channel 512 via a second plurality of outlets 532 that are in fluid communication with the second inlet 522 through the second channel 512 . In the embodiment depicted in FIG. 18 , only the second valve 542 is in the open position. Therefore, the gas 300 is not provided to any of the remaining channels (e.g., the first channel 510 , the third channel 514 , and the fourth channel 516 ).

[0082] Referring now to FIG. 19 , the third valve 544 ( FIG. 16 ) can be actuated to or toward an open position to allow gas 300 to flow from the gas supply 150 to the third channel 514 defined by the gas delivery system 202 . Specifically, the gas 300 can enter the third channel 514 via the third inlet 524 . The gas 300 can then exit the third channel 514 via a third plurality of outlets 534 that are in fluid communication with the third inlet 524 through the third channel 514 . In the embodiment depicted in FIG. 19 , only the third valve 544 is in the open position. Therefore, the gas 300 is not provided to any of the remaining channels (e.g., the first channel 510 , the second channel 512 , and the fourth channel 516 ).

[0083] Referring now to FIG. 20 , fourth valve 546 ( FIG. 16 ) can be actuated to or toward an open position to allow gas 300 to flow from gas supply 150 to fourth channel 516 defined by gas delivery system 202 . Specifically, gas 300 can enter fourth channel 516 via fourth inlet 526 . Gas 300 can then exit fourth channel 516 via a fourth plurality of outlets 536 , which are in fluid communication with fourth inlet 526 through fourth channel 516 . In the embodiment depicted in FIG. 20 , only fourth valve 546 is in the open position. Therefore, gas 300 is not provided to any of the remaining channels (e.g., first channel 510 , second channel 512 , and third channel 514 ).

[0084] It should be understood that any suitable combination of valves 540, 542, 544, and 546 can be actuated to an open position. For example, in some implementations, at least one of the first valve 540 and the second valve 542, the third valve 544, and the fourth valve 546 can be actuated to an open position. In this manner, gas 300 can exit the gas delivery system 202 via at least one of the first plurality of outlets 530, the second plurality of outlets 532, the third plurality of outlets 534, and the fourth plurality of outlets 536 to reduce or eliminate non-uniformities (e.g., azimuthal uniformity control) associated with a process performed on a workpiece 114 (FIG. 1) disposed within the processing chamber 110 (FIG. 1). [Demonstration of plasma processing equipment with a workpiece support having an opening]

[0085] Another exemplary aspect of the present disclosure relates to a plasma processing apparatus that provides more efficient pumping (e.g., symmetrical pumping) through an opening in a workpiece support. Non-uniformities associated with processing can affect processing performance. Therefore, it is desirable to reduce or eliminate these non-uniformities.

[0086] For example, in some embodiments, an opening may be located in the middle of a workpiece support for pumping gas from a plasma processing apparatus, thereby providing symmetrical pumping to produce improved pumping capacity. Thus, non-uniformities associated with processing processes (e.g., etching processes, stripping processes, surface treatment processes, etc.) performed on a workpiece disposed in a plasma processing apparatus may be reduced or eliminated.

[0087] In some embodiments, the opening may have multiple holes to facilitate extraction of gas from the plasma processing apparatus. For example, the opening may have a production-compatible cover. The cover may include multiple holes and may be located on the top surface of the opening. Furthermore, the cover may prevent components from falling into the pump port and damaging a pump capable of extracting gas from the plasma processing apparatus. As another example, the opening itself may have multiple holes to facilitate extraction of gas from the plasma processing apparatus.

[0088] According to exemplary aspects of the present disclosure, a plasma processing apparatus may include a processing chamber, a workpiece support, and a pump port. The workpiece support in the processing chamber is operable to support a first workpiece and a second workpiece in the processing chamber. The workpiece support may include a first processing station and a second processing station. The first processing station may be configured to support the first workpiece. The second processing station may be configured to support the second workpiece. The pump port may be configured to pump gas from the processing chamber. The pump port may be located below the workpiece support. The workpiece support may include an opening located between the first processing station and the second processing station. The opening may provide a path for pumping gas from the processing chamber to the pump port. The opening may include a plurality of holes for pumping gas from the processing chamber.

[0089] In some embodiments, the opening may include a cover having a plurality of holes. The cover may be located on the top surface of the opening. In some embodiments, the opening itself may be a plurality of holes.

[0090] In some embodiments, the plurality of holes may be evenly distributed. For example, the plurality of holes may have the same hole density and / or the same hole size.

[0091] In some embodiments, the plurality of holes may be unevenly distributed. For example, a first portion of the plurality of holes may include a first hole density, and a second portion of the plurality of holes may include a second hole density. The first hole density may differ from the second hole density. Alternatively, and / or additionally, the diameter of each hole in the first portion of the plurality of holes may differ from the diameter of each hole in the second portion of the plurality of holes. Holes with larger sizes may provide more pumping capacity, while holes with smaller sizes may provide a clogging effect.

[0092] In some embodiments, the cover may be removable and / or controllable for symmetrical pumping. The various covers may have different pore distributions (e.g., pore density, pore size). For example, a first cover may have a first plurality of identical or different pore densities and a first plurality of identical or different pore sizes. A second cover may have a second plurality of identical or different pore densities and a second plurality of identical or different pore sizes. The first plurality of pore densities and the first plurality of pore sizes may differ from the second plurality of pore densities and the second plurality of pore sizes, respectively. In some embodiments, during a particular process step and / or various processes, the first cover may be removed from the opening and the second cover may be replaced over the opening for a particular process step and / or process. In some embodiments, multiple covers may be available for testing during process testing. One or more covers may be selected from the plurality to reduce non-uniformities associated with processes (e.g., etching processes, stripping processes, surface treatment processes, etc.) performed on a workpiece disposed in a plasma processing apparatus.

[0093] In some embodiments, the opening may be located between the first and second processing stations and may have a rectangular shape. For example, the cover of the opening and / or the opening itself may have a rectangular shape. In some embodiments, the opening may include a first curved surface and a second, opposing curved surface. The first curved surface may mate with an edge portion of the first processing station. The second, opposing curved surface may mate with an edge portion of the second processing station. For example, the cover of the opening and / or the opening itself may include a first curved surface and a second, opposing curved surface. However, it should be understood that the opening may have any shape configured to provide effective pumping capabilities (e.g., symmetrical pumping).

[0094] In some embodiments, the plasma processing apparatus may include a plasma chamber disposed above a processing chamber. The plasma chamber may be separated from the processing chamber by a separation grid (such as separation grid 200 discussed in Figures 1 through 20). The plasma processing apparatus may further include a first plasma chamber disposed above a first processing station. The first plasma chamber is associated with a first inductive plasma source. The first plasma chamber may be separated from the processing chamber by a first separation grid (such as separation grid 200 discussed in Figures 1 through 20). A second plasma chamber may be disposed above a second processing station. The second plasma chamber is associated with a second inductive plasma source. The second plasma chamber may be separated from the processing chamber by a second separation grid (such as separation grid 200 discussed in Figures 1 through 20).

[0095] Exemplary aspects of the present disclosure provide several technical benefits and advantages. For example, an opening located in the center of a workpiece support can provide more efficient pumping (e.g., symmetrical pumping), thereby reducing non-uniformities associated with processing operations (e.g., etching, stripping, surface treatment, etc.) performed on a workpiece disposed in a plasma processing apparatus. Furthermore, the opening can have a removable and / or controllable cover containing a plurality of holes to provide a path for evacuating gas from the processing chamber. Accordingly, a desired cover can be selected to provide more efficient pumping and / or reduce non-uniformities associated with the processing operation.

[0096] FIG. 21 illustrates an exemplary dual-chamber plasma processing apparatus 600 according to an exemplary embodiment of the present disclosure. The dual-chamber plasma processing apparatus 600 includes a processing chamber 610 and a first plasma chamber 620 (e.g., a first plasma head) separate from the processing chamber 610. The dual-chamber plasma processing apparatus 600 may include a second plasma chamber 640 (e.g., a second plasma head) that is substantially identical to the first plasma chamber 620. A top plate 680 may be disposed above the first plasma chamber 620 and the second plasma chamber 640.

[0097] The first plasma chamber 620 can include dielectric sidewalls 622. The top plate 680 and the dielectric sidewalls 622 can form a first plasma chamber interior 625. The dielectric sidewalls 622 can be formed of any suitable dielectric material, such as quartz.

[0098] The dual-chamber plasma processing apparatus 600 may include a first inductively coupled plasma source 635 configured to generate plasma from a process gas provided into a first plasma chamber interior 625. The first inductively coupled plasma source 635 may include an inductive coil 630 disposed around a dielectric sidewall 622. The inductive coil 630 may be coupled to an RF power generator 634 via a suitable matching network 632. Reactants and / or carrier gases may be provided to the chamber interior from a gas supply (not shown). When the inductive coil 630 is energized with RF power from the RF power generator 634, a substantially inductive plasma is induced in the first plasma chamber interior 625. In some embodiments, the first plasma chamber 620 may include a grounded Faraday shield to reduce capacitive coupling from the inductive coil 630 to the plasma.

[0099] The second plasma chamber 640 can include dielectric sidewalls 642. The top plate 680 and the dielectric sidewalls 642 can form a second plasma chamber interior 645. The dielectric sidewalls 642 can be formed of any suitable dielectric material, such as quartz.

[0100] The dual-chamber plasma processing apparatus 600 may include a second inductively coupled plasma source 655 configured to generate plasma from a process gas provided to a second plasma chamber interior 645. The second inductively coupled plasma source 655 may include an inductive coil 650 disposed around a dielectric sidewall 642. The inductive coil 650 may be coupled to an RF power generator 654 via a suitable matching network 652. Reactants and / or carrier gases may be provided to the chamber interior from a gas supply (not shown). When the inductive coil 650 is energized with RF power from the RF power generator 654, a substantially inductive plasma is induced in the second plasma chamber interior 645. In some embodiments, the second plasma chamber interior 645 may include a grounded Faraday shield to reduce capacitive coupling from the inductive coil 650 to the plasma.

[0101] The first separation grid 616 can separate the first plasma chamber 620 from the processing chamber 610. The first separation grid 616 can be used to perform ion filtering of particles generated by the plasma in the first plasma chamber 620. Particles passing through the first separation grid 616 can be exposed to a workpiece (e.g., a semiconductor wafer) in the processing chamber for surface processing (e.g., photoresist removal) of the workpiece.

[0102] In particular, in some embodiments, the first separation grid 616 is transparent to neutral species but impermeable to charged particles from the plasma. For example, charged particles or ions may recombine on the walls of the first separation grid 616. The first separation grid 616 may include one or more material grid sheets having holes distributed according to a hole pattern specific to each sheet of material. The hole pattern of each grid sheet may be the same or different.

[0103] For example, the holes may be distributed according to a plurality of hole patterns across a plurality of substantially parallel grid plates, such that no holes have a direct line of sight between the plasma chamber and the processing chamber, for example, to reduce or block UV light. Depending on the process, some or all of the grids may be made of a conductive material (e.g., Al, Si, SiC, etc.) and / or a non-conductive material (e.g., quartz, etc.). In some embodiments, if a portion of the grid (e.g., the grid plate) is made of an electrically conductive material, that portion of the grid may be grounded. In some embodiments, the first separation grid 616 may be the separation grid 200 with the gas delivery system 202.

[0104] The second separation grid 666 can separate the second plasma chamber 640 from the processing chamber 610. The second separation grid 666 can be used to perform ion filtering of particles generated by the plasma in the second plasma chamber 640. Particles passing through the second separation grid 666 can be exposed to a workpiece (e.g., a semiconductor wafer) in the processing chamber for surface processing (e.g., photoresist removal) of the workpiece.

[0105] In particular, in some embodiments, the second separation grid 666 is transparent to neutral species but impermeable to charged particles from the plasma. For example, charged particles or ions may recombine on the walls of the second separation grid 666. The second separation grid 666 may include one or more material grid sheets having holes distributed according to a hole pattern specific to each sheet of material. The hole pattern of each grid sheet may be the same or different.

[0106] For example, the holes can be distributed according to a plurality of hole patterns across a plurality of substantially parallel grid plates, such that no holes have a direct line of sight between the plasma chamber and the processing chamber, for example to reduce or block UV light. Depending on the process, some or all of the grids can be made of conductive materials (e.g., Al, Si, SiC, etc.) and / or non-conductive materials (e.g., quartz, etc.). In some embodiments, if a portion of the grid (e.g., the grid plate) is made of an electrically conductive material, that portion of the grid can be grounded. In some embodiments, the second separation grid 666 can be the separation grid 200 with the gas delivery system 202.

[0107] The plasma processing apparatus includes a workpiece support 612 (e.g., a susceptor) operable to support a first workpiece 614 and a second workpiece 624 in a processing chamber 610. The workpiece support 612 may include a first processing station and a second processing station (as shown in FIG. 22 ). The first processing station may support the first workpiece 614. The second processing station may support the second workpiece 624.

[0108] The plasma processing apparatus includes a pump port 670 for pumping gas from the processing chamber 610. The pump port 670 is located below the workpiece support 612. The workpiece support 612 may include an opening between the first processing station and the second processing station (as shown in FIG. 22 ). The opening provides a path for pumping gas from the processing chamber 610 to the pump port 670. The opening may include a plurality of holes for pumping gas from the processing chamber 610.

[0109] FIG22 illustrates a plan view of an exemplary processing chamber 610 of a dual-chamber plasma processing apparatus 600 according to an exemplary embodiment of the present disclosure. A workpiece support 612 includes a first processing station 612A and a second processing station 612B. The first processing station 612A supports a first workpiece 614. The second processing station 612B supports a second workpiece 624. The workpiece support 612 includes an opening 613A located between the first processing station 612A and the second processing station 612B, i.e., in the middle of the workpiece support 612. The opening 613A is rectangular.

[0110] 22 , the opening includes a plurality of holes 615 for exhausting gas from the processing chamber 610. The plurality of holes 615 are evenly distributed and have the same hole density and the same hole size.

[0111] In some embodiments, opening 613A may include a cover having a plurality of holes 615. The cover may be positioned on the top surface of opening 613A. The cover may be removable and / or controllable to provide symmetrical pumping. In some embodiments, opening 613A itself may have a plurality of holes 615.

[0112] FIG23 illustrates a plan view of an exemplary processing chamber 610 of a dual-chamber plasma processing apparatus 600 according to an exemplary embodiment of the present disclosure. As shown in FIG23 , an opening 613B is located between a first processing station 612A and a second processing station 612B, i.e., in the center of a workpiece support 612. Opening 613B includes a first curved surface 617 and a second, opposing curved surface 619. The first curved surface 617 is adapted to mate with an edge portion of the first processing station 612A. The second, opposing curved surface is adapted to mate with an edge portion of the second processing station 612B.

[0113] 23 , the opening includes a plurality of holes 615 for exhausting gas from the processing chamber 610. The plurality of holes 615 are evenly distributed and have the same hole density and the same hole size.

[0114] In some embodiments, opening 613B may include a cover having a plurality of holes 615. The cover may be positioned on the top surface of opening 613B. The cover may be removable and / or controllable to provide symmetrical pumping. In some embodiments, opening 613B itself may have a plurality of holes 615.

[0115] In some embodiments (not shown in Figures 22 and 23), the plurality of holes 615 may be unevenly distributed. For example, a first portion of the plurality of holes 615 may include a first hole density, and a second portion of the plurality of holes may include a second hole density. The first hole density may be different from the second hole density. Alternatively, and / or additionally, the diameter of each hole in the first portion of the plurality of holes 615 may be different from the diameter of each hole in the second portion of the plurality of holes 615. Holes with larger sizes may provide more pumping capacity, while holes with smaller sizes may cause a clogging effect. Examples of workpiece supports with unevenly distributed holes are further described in Figures 24-27.

[0116] FIG. 24 illustrates exemplary openings 613A and 613B according to an exemplary embodiment of the present disclosure. Openings 613A and 613B may include a first portion A 710 and a second portion B 720 separated by a horizontal dashed line. First portion A 710 is located above the horizontal dashed line. Second portion B 720 is located below the horizontal dashed line. The holes in first portion A 710 may have a first hole density, while the holes in second portion B 720 may have a second hole density. The first hole density may be different from the second hole density. Alternatively, and / or additionally, the diameter of each hole in first portion A 710 may be different from the diameter of each hole in second portion B 720.

[0117] FIG. 25 illustrates exemplary openings 613A and 613B according to an exemplary embodiment of the present disclosure. Openings 613A and 613B may include a first portion A 810 and a second portion B 820 separated by a vertical dashed line. First portion A 810 is located to the left of the vertical dashed line. Second portion B 820 is located to the right of the vertical dashed line. The holes in first portion A 810 may include a first hole density, while the holes in second portion B 820 may include a second hole density. The first hole density may differ from the second hole density. Alternatively, and / or additionally, the diameter of each hole in first portion A 810 may differ from the diameter of each hole in second portion B 820.

[0118] FIG. 26 illustrates exemplary openings 613A and 613B according to an exemplary embodiment of the present disclosure. Openings 613A and 613B may include a first portion A 910, a second portion B 920, a third portion C 930, and a fourth portion D 940, separated by a vertical dashed line and a horizontal dashed line. First portion A 910 is located to the left of the vertical dashed line and above the horizontal dashed line. Second portion B 920 is located to the right of the vertical dashed line and above the horizontal dashed line. Third portion C 930 is located to the left of the vertical dashed line and below the horizontal dashed line. Fourth portion D 940 is located to the right of the vertical dashed line and below the horizontal dashed line. Holes in one or more of first portion A 910, second portion B 920, third portion A 930, and fourth portion B 940 may have different hole densities. Alternatively, and / or additionally, the holes in one or more of the first portion A 910, the second portion B 920, the third portion C 930, and the fourth portion D 940 may have different diameters.

[0119] FIG. 27 illustrates exemplary openings 613A and 613B according to exemplary embodiments of the present disclosure. Openings 613A and 613B may include a first portion A 915, a second portion B 925, a third portion C 935, and a fourth portion D 945 separated by a first diagonal dashed line and a second diagonal dashed line. The holes in one or more of first portion A 915, second portion B 925, third portion A 935, and fourth portion B 945 may have different hole densities. Alternatively, and / or additionally, the holes in one or more of first portion A 915, second portion B 925, third portion A 935, and fourth portion B 945 may have different diameters.

[0120] While the subject matter of the present invention has been described in detail with reference to specific exemplary embodiments thereof, it should be understood that those skilled in the art, upon understanding the foregoing, will readily be able to generate alternatives, variations, and equivalents to such embodiments. Accordingly, the scope of the present disclosure is illustrative rather than restrictive, and the present disclosure does not exclude such modifications, variations, and / or additions to the subject matter of the present invention that would be obvious to one of ordinary skill in the art.

[0121] 100: Plasma processing equipment 110: Processing Room 112: Workpiece support or base 114: Artifact 116: Separate Grid 116a: first grid plate 116b: Second grid plate 116c: The third grid plate 117: Gas injection source 120: Plasma Chamber 122: Sidewall 124: Top plate 125: Interior 128: Faraday shield 130: Induction coil 132: Matching network 134:RF power generator 150: Gas supplier 200: Separate grid 202: Gas delivery system 204: Surface 206: Opening 208: Hole 210: Channel 212: First Channel 214: Second Channel 220: Entrance 230:Exit 240:Wall 242: Opening 300: Gas 400: Barrier material 510: First channel 512: Second channel 514: Third Channel 516: The Fourth Channel 520: First Entrance 522: Second Entrance 524: The third entrance 526: The Fourth Entrance 530: First multiple exits 532: Second multiple exits 534: The third exit 536: The fourth exit 540: First valve 542: Second valve 544: The third valve 546: Fourth valve 600:Dual-chamber plasma processing equipment 610: Processing Room 612: Workpiece support 612A: First processing station 612B: Second processing station 613A: Opening 613B: Opening 614: First Workpiece 615: Hole 616: First separation grid 617: First Surface 619: Second relative surface 620: First plasma chamber 622: Dielectric sidewall 624: Second Workpiece 625: Inside the first plasma chamber 630: Induction coil 632: Matching Network 634:RF power generator 635: First inductively coupled plasma source 640: Second plasma chamber 642: Dielectric sidewall 645: Inside the second plasma chamber 650: Induction coil 652: Matching network 654:RF power generator 655: Second inductively coupled plasma source 666: Second separation grid 670: Pump Port 680: Top plate 710: Part I A 720: Part II B 810: Part I A 820: Part II B 910: Part I A 915: Part 1A 920: Part II B 925: Part II B 930: Part III C 935: Part III C 940: Part IV D 945: Part IV D

Claims

1. A plasma processing apparatus, comprising: a processing chamber; a workpiece support in the processing chamber operable to support a first workpiece and a second workpiece in the processing chamber, the workpiece support including a first processing station and a second processing station defining a central portion of the workpiece support between the first processing station and the second processing station, the first processing station configured to support the first workpiece, and the second processing station configured to support the second workpiece; a pump port configured to extract air from the processing chamber, the pump port being located in the processing chamber. Below the workpiece support; and wherein the central portion of the workpiece support includes an opening located between the first processing station and the second processing station, the opening providing a path for evacuating air from the processing chamber to one of the pump ports, the opening including a plurality of holes, a first portion of the plurality of holes including a first pore density, and a second portion of the plurality of holes including a second pore density, the first pore density being different from the second pore density, and wherein the opening includes a removable cover located on the opening, the removable cover defining the plurality of holes.

2. The plasma processing apparatus as claimed in claim 1, wherein the opening includes a first curved surface and a second opposing curved surface, the first curved surface matching an edge portion of the first processing station, and the second opposing curved surface matching an edge portion of the second processing station.

3. The plasma treatment apparatus as claimed in claim 1, further comprising: a plasma chamber disposed above the treatment chamber, the plasma chamber being separated from the treatment chamber by a separation grid.

4. The plasma processing apparatus as claimed in claim 1, wherein the first portion of the plurality of holes includes a first hole diameter, and the second portion of the plurality of holes includes a second hole diameter, the first hole diameter being different from the second hole diameter.

5. The plasma processing apparatus as claimed in claim 1, wherein the plurality of holes are uniformly distributed.

6. The plasma processing apparatus as claimed in claim 1, wherein the plurality of pores are unevenly distributed.

7. A plasma processing apparatus comprising: a plasma chamber; a processing chamber including a substrate support operable to support a substrate; a plasma source configured to generate plasma in the plasma chamber; a plurality of independently controllable valves; and a separation grid separating the plasma chamber from the processing chamber, the separation grid including a plurality of apertures configured to allow neutral free radicals to flow from the plasma chamber to the processing chamber through the apertures, the separation grid including: a gas delivery system defining a plurality of semi-annular channels, a plurality of inlets, and a plurality of outlets, wherein the plurality of inlets are located radially in a first channel of the separation grid and offset from a circumferential center, the plurality of semi-annular channels extending along a periphery of the gas delivery system, the gas delivery... The system includes a wall that divides the semi-annular channel into a first channel and a second channel, the wall defining a plurality of openings spaced apart along the circumference of the separating grid to provide fluid communication between the first channel and the second channel, the first channel and the second channel being separated radially, wherein each of the plurality of inlets is coupled to a corresponding valve among a plurality of independently controllable valves, wherein the gas delivery system is configured to inject a gas from the plurality of outlets into the neutral radical, and wherein the gas delivery system is configured such that the gas enters the first channel through the inlet, then enters the second channel from the first channel through the plurality of openings, and then exits the second channel through the plurality of outlets.

8. The plasma treatment apparatus as claimed in claim 7, wherein: The inlet is in fluid communication with the first channel; and the plurality of outlets are in fluid communication with the second channel.

9. The plasma processing apparatus as claimed in claim 7, wherein the plurality of outlets are in fluid communication with the plurality of inlets via the semi-annular channel.

10. The plasma treatment apparatus as claimed in claim 7, wherein: The plurality of inlets are defined by a first part of the gas delivery system; the first part of the gas delivery system defines a first set of outlets for the plurality of outlets; And a second set of outlets that defines the plurality of outlets by a second part of the gas delivery system, the second part being different from the first part.

11. The plasma processing apparatus of claim 10, wherein the diameter of one of the outlets included in the first set of outlets is smaller than the diameter of one of the outlets included in the second set of outlets.

12. The plasma processing apparatus of claim 10, wherein one of the outlets included in the first set of outlets and disposed next to the inlet has a diameter smaller than the diameter of each of the other outlets included in the first set of outlets.

13. The plasma processing apparatus of claim 12, wherein the diameter of each of the other outlets included in the first set of outlets is smaller than the diameter of one of the outlets included in the second set of outlets.

14. The plasma processing apparatus of claim 10, wherein a portion of the semi-annular channel defined by the first portion of the gas delivery system is narrower than a portion of the semi-annular channel defined by the second portion of the gas delivery system.

15. The plasma processing apparatus of claim 10, wherein a portion of the semi-annular channel defined by the first portion of the gas delivery system is wider than a portion of the semi-annular channel defined by the second portion of the gas delivery system.

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