Substrate processing apparatus and display method

Abstract

The substrate processing apparatus of the present invention includes an input unit, a control unit, and a display unit. The input unit accepts input from a user for a formula specifying the processing content. Based on the input formula, the control unit predicts the amount to be used when processing the substrate. The display unit displays the predicted amount.

Description

Substrate processing device and display method The present invention relates to a substrate processing device and a display method. A substrate processing apparatus for processing a substrate using a processing liquid is known. The substrate processing apparatus is installed in a clean room of a factory. The processing liquid is supplied to the substrate processing apparatus from a conveying device installed in the factory (see, for example, Patent Document 1). Patent Document 1 describes a substrate processing apparatus that sequentially transports a plurality of substrate groups, each comprising a plurality of substrates, to a plurality of processing units and performs designated processing on the plurality of substrate groups. The substrate processing apparatus described in Patent Document 1 calculates the transport consumption per unit time for the designated transport according to a recipe for each substrate group. Furthermore, the transport consumption is accumulated every unit time to calculate the total transport consumption, and the timing of inputting the substrate groups is corrected so that the total consumption is within a designated range. [Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent Application Laid-Open No. 2001-102425 [Problems to be Solved by the Invention] However, sometimes the user changes the recipe. In this case, the feed rate used when processing the substrate changes with the recipe change. However, in the substrate processing apparatus of Patent Document 1, it is difficult for a user to predict how much the conveying amount will change when a recipe is changed. The present invention has been developed in light of the above-mentioned problems, and its purpose is to provide a substrate processing apparatus and display method that allows the user to predict the transport volume corresponding to the recipe. [Technical Means for Solving the Problem] According to one aspect of the present invention, a substrate processing apparatus includes an input unit, a prediction unit, and a display unit. The input unit receives user input of a recipe specifying processing details. The prediction unit predicts a transport volume required for processing substrates based on the input recipe. The display unit displays the predicted transport volume. In one embodiment, the prediction unit may also predict the transport amount when processing a batch of the substrates including one or more substrates based on the input recipe. In one embodiment, the prediction unit may also predict, based on the input recipe, a processing transport amount used in accordance with the processing of the substrate and a standby transport amount used irrelevant to the processing of the substrate as the transport amount. In one embodiment, the display unit may also display the processing conveyance volume and the standby conveyance volume. In one embodiment, the substrate processing apparatus may include a first supply unit and a second supply unit. The first supply unit may supply the first processing liquid to the substrate when executing the input recipe. The second supply unit may not supply the second processing liquid to the substrate when executing the input recipe, but may supply the second processing liquid to the substrate when executing a recipe different from the input recipe. The standby transport volume when processing the substrate based on the input recipe may also include the transport volume driven by the second supply unit. In one embodiment, when a plurality of the recipes are input into the input unit, the prediction unit may respectively predict a plurality of the delivery amounts based on the plurality of recipes, and the display unit may also display the predicted plurality of delivery amounts. In one embodiment, the display unit may also display the inputted recipe. When the plurality of recipes are inputted into the input unit, the display unit may also highlight the different portions of the plurality of recipes. In one embodiment, the delivery rate may include at least one of the clean air volume, exhaust volume, cooling water volume, and warm water volume. The prediction unit may convert at least one of the clean air volume, exhaust volume, cooling water volume, and warm water volume into electrical energy. The display unit may also display the electrical energy as the delivery rate. In one embodiment, the delivery amount may include at least one of the following: electricity, clean air, exhaust, cooling water, and warm water. The prediction unit may convert at least one of the electricity, clean air, exhaust, cooling water, and warm water into carbon dioxide emissions. The display unit may also display the carbon dioxide emissions as the delivery amount. According to another aspect of the present invention, a display method includes the following steps: accepting user input of a recipe specifying processing content; predicting a transport volume when processing a substrate based on the input recipe; and displaying the predicted transport volume. According to the present invention, a substrate processing apparatus and a display method capable of predicting a transport amount corresponding to a recipe can be provided. The following describes embodiments of the substrate processing apparatus and display method of the present invention with reference to the accompanying drawings. However, the present invention is not limited to the following embodiments and can be implemented in various forms without departing from the spirit and scope of the present invention. Furthermore, where the description overlaps, the description may be omitted as appropriate. In the figures, identical or corresponding parts are denoted by the same reference numerals, and description thereof will not be repeated. First, referring to FIG1 , a substrate processing apparatus 100 and a conveyor system 2000 according to this embodiment will be described. FIG1 shows the substrate processing apparatus 100 and the conveyor system 2000 according to this embodiment. As shown in FIG1 , the substrate processing apparatus 100 processes substrates W (see FIG2 ) using the conveyor system 2000 of a factory. The substrate processing apparatus 100 processes a substrate W using a processing liquid (see FIG. 2 ), for example. Although not shown, a plurality of substrate processing apparatuses 100 are installed in a factory. The transport system 2000 includes, for example, a power supply system 2001, a gas supply system 2002, a liquid supply system 2003, a gas exhaust system 2004, and a liquid exhaust system 2005. Furthermore, in this embodiment, the transport system used by the substrate processing apparatus 100 includes the power consumed by the substrate processing apparatus 100, the gas and liquid supplied to the substrate processing apparatus 100, and the gas and liquid exhausted from the substrate processing apparatus 100. The power supply device 2001 supplies power to the substrate processing apparatus 100. The gas supply device 2002 supplies gas to the substrate processing apparatus 100. The gas is not particularly limited and includes, for example, clean air and inert gas. The inert gas supplied by the gas supply device 2002 includes, for example, nitrogen. The liquid supply device 2003 supplies liquid to the substrate processing apparatus 100. The liquid supplied by the liquid supply device 2003 includes, for example, a processing liquid, pure water (hereinafter sometimes described as DIW (Deionized Water)) and cooling water. Pure water is, for example, deionized water. Pure water can be, for example, room temperature water or warm water (hereinafter sometimes described as HDIW (Hot Deionized Water)). As cooling water, for example, industrial water can be used or room temperature pure water can be used. Gas is exhausted from the substrate processing apparatus 100 to the gas exhaust device 2004 . Liquid is exhausted from the substrate processing apparatus 100 to the liquid exhaust device 2005 . The substrate processing apparatus 100 includes a power supply unit 200, a gas supply unit 300, a liquid supply unit 400, a gas exhaust unit 500, and a liquid exhaust unit 600. The power supply unit 200 supplies power supplied from a power supply device 2001 to various components of the substrate processing apparatus 100 via a cable. The gas supply unit 300 supplies gas supplied from a gas supply device 2002 to various components of the substrate processing apparatus 100 via piping, etc. The liquid supply unit 400 supplies liquid supplied from a liquid supply device 2003 to various components of the substrate processing apparatus 100 via piping, etc. Gas is exhausted from various components of the substrate processing apparatus 100 to the gas exhaust unit 500 via piping, etc. The gas exhaust unit 500 exhausts gas from various components of the substrate processing apparatus 100 to the gas exhaust unit 2004 via piping, etc. Liquid is exhausted from various components of the substrate processing apparatus 100 to the liquid exhaust unit 600 via piping, etc. Furthermore, the liquid discharge unit 600 discharges liquid from various parts of the substrate processing apparatus 100 to the liquid discharge device 2005 via piping and the like. The substrate processing apparatus 100 includes a control device 101 , a power meter 150 , a flow meter 160 , a display unit 170 , and an input unit 180 . The control device 101 controls the operation of each unit of the substrate processing apparatus 100. The control device 101 includes a control unit 102 and a storage unit 103. The control unit 102 is an example of a "prediction unit" of the present invention. The control unit 102 includes a processor. For example, the control unit 102 includes a CPU (Central Processing Unit) or an MPU (Micro Processing Unit). Alternatively, the control unit 102 may include a general-purpose computer or a dedicated computer. The control unit 102 may further include an NPU (Neural Network Processing Unit). The memory unit 103 stores data and computer programs. The memory unit 103 includes a main memory device, such as a semiconductor memory. The memory unit 103 may also include an auxiliary memory device, such as a semiconductor memory and / or a hard drive. The memory unit 103 may also include removable media. The control unit 102 controls the operation of various components of the substrate processing apparatus 100 based on the data and computer programs stored in the memory unit 103. Specifically, the memory unit 103 stores recipes and control programs. The recipes define the processing contents and processing sequence of the substrate W. The recipes also display processing conditions and various setting values. The control unit 102 controls the operation of each unit of the substrate processing apparatus 100 based on a recipe and a control program. Furthermore, in this embodiment, the control unit 102 predicts the transport volume of substrates W during processing based on a recipe input by a user into the input unit 180, and causes the display unit 170 to display an image based on the predicted transport volume. The method for predicting the transport volume based on a recipe input into the input unit 180 will be described later. The power meter 150 measures the power used (consumed) by the substrate processing apparatus 100. The power meter 150 outputs the measurement results to the control unit 101. In this embodiment, a plurality of power meters 150 are provided. The power meters 150 are located in various parts of the substrate processing apparatus 100 to measure the power used by each part of the substrate processing apparatus 100. The control unit 102 can calculate the power used by the entire substrate processing apparatus 100 by summing the measurement results of the plurality of power meters 150. The flowmeter 160 measures the flow rate of gas and liquid. The flowmeter 160 outputs the measurement results to the control device 101. In this embodiment, a plurality of flowmeters 160 are provided. The flowmeters 160 are placed in the piping of various components of the substrate processing apparatus 100 to measure the flow rate of the gas or liquid flowing through the piping. In this embodiment, the flowmeters 160 include flowmeters 160a through 160k, which will be described later. The display unit 170 displays various information. In this embodiment, the display unit 170 displays, for example, a recipe setting screen. The display unit 170 includes, for example, a liquid crystal display or an organic EL (electroluminescence) display. The screens displayed by the display unit 170 will be described later. The input unit 180 receives input from the user and outputs information indicating the input result to the control device 101. For example, the input unit 180 receives user input regarding a recipe specifying processing content. For example, a user can create and register a new recipe or modify a portion of an already registered recipe using the input unit 180. Furthermore, the input unit 180 may include, for example, at least one of a touch panel and a pointing device. The touch panel may be disposed on the display surface of the display unit 170. The input unit 180 and the display unit 170 may constitute, for example, a graphical user interface (GUI). Furthermore, in this embodiment, the control unit 102 controls various components of the substrate processing apparatus 100. The control unit 102 controls the power supply unit 200, the gas supply unit 300, and the liquid supply unit 400 to supply power, gas, and liquid to the various components of the substrate processing apparatus 100. The control unit 102 controls the gas exhaust unit 500 and the liquid exhaust unit 600 to exhaust the gas and liquid used by the various components of the substrate processing apparatus 100 to the gas exhaust device 2004 and the liquid exhaust device 2005, respectively. The control unit 102 receives measurement results from the power meter 150 and the flow meter 160, and receives input information from the input unit 180. The control unit 102 causes the display unit 170 to display a designated image. In this embodiment, the control unit 102 predicts the transport volume required to process one or more substrates W based on the recipe input to the input unit 180. Furthermore, the control unit 102 controls the display unit 170 to display the predicted transport volume. Therefore, the display unit 170 displays the predicted transport volume. Furthermore, in this embodiment, the control unit 102 predicts the transport volume required to process a batch of substrates W containing one or more substrates W based on the recipe input to the input unit 180. As described above, this embodiment includes the control unit 102 for predicting the transport amount when processing the substrate W based on the input recipe, and the display unit 170 for displaying the predicted transport amount. Therefore, the user can predict the transport amount according to the recipe. Furthermore, as described above, the control unit 102 predicts the transport volume when processing one batch of substrates W including one or more substrates W based on the input recipe. Therefore, the user can easily know the transport volume when processing one batch. Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 2. Fig. 2 is a schematic diagram of the substrate processing apparatus 100 of this embodiment. Specifically, Fig. 2 is a schematic top view of the substrate processing apparatus 100. 2 , the substrate processing apparatus 100 is a single-wafer type apparatus that processes substrates W one by one. Typically, the substrates W are substantially disk-shaped. The substrate W is, for example, a semiconductor wafer, a liquid crystal display substrate, a plasma display substrate, a field emission display (FED) substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a mask substrate, a ceramic substrate, or a solar cell substrate. In this embodiment, the substrate W is a semiconductor wafer. The substrate processing apparatus 100 includes a plurality of processing units 10 , a fluid cabinet 110 , a plurality of fluid boxes 120 , a plurality of load ports LP, a carrier robot IR, a central robot CR, and a control device 101 . Each loading port LP stacks and accommodates a plurality of substrates W. Specifically, each loading port LP stacks and accommodates one batch (e.g., 25 substrates) of substrates W. The carrier robot IR transports the substrates W between the loading port LP and the central robot CR. The central robot CR transports the substrates W between the carrier robot IR and the processing unit 10. Each processing unit 10 supplies a processing liquid to the substrate W and processes the substrate W. The fluid cabinet 110 accommodates the processing liquid. The processing liquid includes, for example, a chemical solution, a cleaning liquid, a removal liquid, and / or a waterproofing agent. In addition, the fluid cabinet 110 can also accommodate gas. The processing units 10 form a plurality of towers TW (four towers TW in FIG2 ) arranged to surround the central robot CR when viewed from above. Each tower TW contains a plurality of processing units 10 stacked one above the other (three processing units 10 in FIG2 ). Fluid cartridges 120 correspond to each of the towers TW. The processing liquid within the fluid cabinet 110 is supplied to all processing units 10 within the tower TW corresponding to the fluid cartridge 120 via any of the fluid cartridges 120. The control device 101 controls the operation of each unit of the substrate processing apparatus 100. For example, the control device 101 controls the load port LP, the carrier robot IR, and the central robot CR. Next, the processing unit 10 of this embodiment will be described with reference to Fig. 3. Fig. 3 is a schematic diagram of the processing unit 10 of this embodiment. Specifically, Fig. 3 is a schematic cross-sectional view of the processing unit 10. As shown in FIG3 , in this embodiment, the processing liquid includes, for example, an etching liquid, and the processing unit 10 performs an etching process. The substrate W is processed (etched) by the etching liquid. The etching liquid is a chemical liquid. The etching liquid is, for example, a mixture of hydrofluoric acid (HF) and nitric acid (HNO 3) mixture), hydrofluoric acid, buffered hydrofluoric acid (BHF: Buffered HF), ammonium fluoride, HFEG (a mixture of hydrofluoric acid and ethylene glycol), phosphoric acid (H 3PO 4) SC1 (a mixture of ammonia and hydrogen peroxide), SC2 (a mixture of hydrochloric acid and hydrogen peroxide), SPM (a mixture of sulfuric acid and hydrogen peroxide), or ammonia. The processing unit 10 includes a chamber 11 and a substrate holding portion 20 . The chamber 11 is generally box-shaped and has an interior space. The chamber 11 accommodates substrates W. Here, the substrate processing apparatus 100 is a single-wafer type that processes substrates W one by one, and the substrates W are accommodated one by one in the chamber 11. The substrates W are accommodated and processed within the chamber 11. The chamber 11 also accommodates at least a portion of each of the substrate holder 20, the chemical supply unit 30, the first cleaning liquid supply unit 50, and the second cleaning liquid supply unit 60. The substrate holder 20 holds the substrate W. The substrate holder 20 holds the substrate W horizontally, with its upper surface (front surface) Wa facing upward and its lower surface (back surface) Wb facing vertically downward. Furthermore, the substrate holder 20 rotates the substrate W while holding it. The substrate holder 20 rotates the substrate W while holding it. For example, the substrate holder 20 may be a clamping type that clamps the end of the substrate W. Alternatively, the substrate holder 20 may include any mechanism that holds the substrate W from the lower surface Wb. For example, the substrate holder 20 may be a vacuum type. In this case, the substrate holder 20 holds the substrate W horizontally by adsorbing the central portion of the lower surface Wb of the substrate W, which is not the device forming surface, against the upper surface. Alternatively, the substrate holder 20 may combine a clamping type in which a plurality of chuck pins contact the peripheral end surface of the substrate W, and a vacuum type. For example, the substrate holding unit 20 includes a spin base 21, a chuck member 22, a shaft 23, a spin motor 24, and a housing 25. The chuck member 22 is provided on the spin base 21. The chuck member 22 chucks the substrate W. Typically, a plurality of chuck members 22 are provided on the spin base 21. The shaft 23 extends in the vertical direction along the rotation axis AX. The spin base 21 is coupled to the upper end of the shaft 23. The substrate W is placed on the spin base 21. The spin base 21 is disk-shaped. The chuck member 22 supports the substrate W horizontally. A shaft 23 extends downward from the center of the spin base 21. A spin motor 24 imparts rotational force to the shaft 23. The spin motor 24 rotates the shaft 23 in the rotational direction, thereby rotating the substrate W and the spin base 21 about the rotation axis AX. A housing 25 houses the shaft 23 and the spin motor 24. The liquid supply unit 400 (see FIG. 1 ) includes a chemical liquid supply unit 30 , a first cleaning liquid supply unit 50 , and a second cleaning liquid supply unit 60 . The chemical liquid supply unit 30 supplies a chemical liquid (here, an etching liquid) to the substrate W. Typically, the chemical liquid supply unit 30 supplies the chemical liquid to the upper surface Wa of the substrate W. The chemical solution is not particularly limited and may be, for example, SPM. The temperature of the SPM supplied to the substrate W is not particularly limited and may be, for example, 80°C or higher and less than 120°C. Furthermore, the temperature of the SPM supplied to the substrate W may be 120°C or higher, or 150°C or higher. Furthermore, the temperature of the SPM supplied to the substrate W may be 180°C or higher, or 200°C or higher. The chemical liquid supply unit 30 includes a pipe 32 and a nozzle 36 . The nozzle 36 discharges the chemical liquid toward the upper surface Wa of the substrate W. The nozzle 36 is connected to the pipe 32 . The chemical liquid is supplied to the pipe 32 . In this embodiment, the chemical solution supply unit 30 further includes a sulfuric acid supply unit 410 and a hydrogen peroxide solution supply unit 430. Piping 32 is connected to the sulfuric acid supply unit 410 and the hydrogen peroxide solution supply unit 430. Sulfuric acid is supplied from the sulfuric acid supply unit 410, and hydrogen peroxide solution is supplied from the hydrogen peroxide solution supply unit 430 to the piping 32. Piping 32 supplies a mixture of sulfuric acid and hydrogen peroxide solution, i.e., SPM, to the nozzle 36. The sulfuric acid from the sulfuric acid supply unit 410 is not included in the transport process. The nozzle 36 may also be configured to be movable relative to the substrate W. In this embodiment, the chemical liquid supply unit 30 further includes a nozzle moving unit 38. The nozzle moving unit 38 can move the nozzle 36 up and down, or can rotate the nozzle 36 horizontally about its axis of rotation. The nozzle moving unit 38 moves the nozzle 36 up and down. For example, the nozzle moving unit 38 includes a ball screw mechanism and an electric motor that provides driving force to the ball screw mechanism. Furthermore, the nozzle moving unit 38 rotates the nozzle 36 horizontally. For example, the nozzle moving unit 38 includes an electric motor. The chemical supply unit 30 may also supply a chemical solution other than the etching solution to the substrate W. Furthermore, the substrate processing apparatus 100 may include a processing liquid supply unit that supplies a processing liquid other than the chemical solution, instead of the chemical supply unit 30. The detailed configuration of the sulfuric acid supply unit 410 and the hydrogen peroxide solution supply unit 430 will be described later. The first cleaning liquid supply unit 50 supplies the cleaning liquid to the substrate W. Typically, the first cleaning liquid supply unit 50 supplies the cleaning liquid to the upper surface Wa of the substrate W. For example, the cleaning liquid may be deionized water (DIW) at room temperature, warm water (HDIW), carbonated water, electrolyzed ionized water, ozone water, diluted hydrochloric acid solution, or reduced water (hydrogen water). In this embodiment, the cleaning liquid supplied by the first cleaning liquid supply unit 50 is deionized water (DIW) at room temperature. The first cleaning liquid supply unit 50 includes a pipe 52 and a nozzle 56. The nozzle 56 sprays the cleaning liquid toward the upper surface Wa of the substrate W. The nozzle 56 is connected to the pipe 52. The cleaning liquid is supplied to the pipe 52 from a supply source. The nozzle 56 may also be configured to be movable relative to the substrate W. In this embodiment, the first cleaning liquid supply unit 50 further includes a nozzle moving unit 58. The nozzle moving unit 58 can move the nozzle 56 upward and downward, or can rotate the nozzle 56 horizontally around the rotation axis. The nozzle moving unit 58 is configured similarly to the nozzle moving unit 38, for example. The first cleaning liquid supply unit 50 further includes a valve 54. The valve 54 is attached to the pipe 52. The valve 54 opens and closes the flow path of the pipe 52. The type of valve 54 is not particularly limited, but in this embodiment, it is an air valve driven by an air pressure actuator. A flow meter 160a is installed in the pipe 52. The flow meter 160a measures the amount of cleaning fluid passing through the pipe 52. The flow meter 160a outputs the measurement result to the control unit 102. In this embodiment, the flow meter 160a (160) measures the volume of the fluid flowing per unit time. The second cleaning liquid supply unit 60 supplies the cleaning liquid to the substrate W. Typically, the second cleaning liquid supply unit 60 supplies the cleaning liquid to the upper surface Wa of the substrate W. For example, the cleaning liquid supplied by the second cleaning liquid supply unit 60 may include room temperature deionized water (DIW), warm water (HDIW), carbonated water, electrolyzed ionized water, ozone water, diluted hydrochloric acid solution, or reduced water (hydrogen water). In this embodiment, the cleaning liquid supplied by the second cleaning liquid supply unit 60 is warm water (HDIW). The second cleaning liquid supply unit 60 includes a pipe 62 and a nozzle 66. The nozzle 66 sprays the cleaning liquid toward the upper surface Wa of the substrate W. The nozzle 66 is connected to the pipe 62. The cleaning liquid is supplied to the pipe 62. In this embodiment, the second cleaning liquid supply unit 60 further includes a warm water supply unit 450. A pipe 62 is connected to the warm water supply unit 450. Warm water is supplied from the warm water supply unit 450 to the pipe 62. The pipe 62 supplies warm water to the nozzle 66. The nozzle 66 may also be configured to be movable relative to the substrate W. In this embodiment, the second cleaning liquid supply unit 60 further includes a nozzle moving unit 68. The nozzle moving unit 68 can move the nozzle 66 up and down, or can rotate the nozzle 66 horizontally about its axis of rotation. The nozzle moving unit 68 may be configured similarly to the nozzle moving unit 38, for example. The detailed configuration of the hot water supply unit 450 will be described later. The gas supply unit 300 (see FIG1 ) includes the blower unit 12 and the inert gas supply unit 70 . Furthermore, the gas supply unit 300 includes gas valves installed in various components of the substrate processing apparatus 100 , and a gas supply unit (not shown) that supplies clean air to an air-driven pump. The air supply unit 12 is disposed on or above the chamber 11. For example, the air supply unit 12 is disposed on the top surface of the chamber 11. The air supply unit 12 supplies clean air into the chamber 11. The air supply unit 12 includes, for example, a fan filter unit (FFU). The air supply unit 12 and the exhaust device 80 described later form a downflow (downflow) in the chamber 11. In addition, a flow meter 160 is provided in the air supply unit 12 (see FIG. 1 ). The flow meter 160 measures the air supply volume of the air supply unit 12 and outputs the measurement result to the control unit 102. The inert gas supply unit 70 supplies an inert gas to the substrate W. The type of the inert gas is not particularly limited, and nitrogen gas is an example. The inert gas supply unit 70 includes a pipe 72 , a valve 74 , and a nozzle 76 . Nozzle 76 ejects an inert gas toward the lower surface Wb of substrate W. For example, nozzle 76 ejects the inert gas toward the center of substrate W. Nozzle 76 has an outlet through which the inert gas is ejected. Nozzle 76 ejects the inert gas, for example, toward the upper or horizontal direction. Nozzle 76 is connected to pipe 72. Inert gas is supplied to pipe 72 from a supply source. The valve 74 is attached to the pipe 72. The valve 74 opens and closes the flow path of the pipe 72. The type of the valve 74 is not particularly limited, but in this embodiment, it is an air valve. A flow meter 160b is attached to the pipe 72. The flow meter 160b measures the amount of the inert gas passing through the pipe 72. The flow meter 160b outputs the measurement result to the control unit 102. The gas exhaust portion 500 (refer to FIG1 ) includes an exhaust device 80. The exhaust device 80 includes an exhaust pipe 81 and an exhaust fan 82. The exhaust pipe 81 is arranged in a manner to pass through the side wall of the chamber 11. The exhaust pipe 81 connects the inside and outside of the chamber 11. The exhaust fan 82 discharges the air in the chamber 11 to the outside of the chamber 11 through the exhaust pipe 81. The exhaust fan 82 can change the exhaust volume by changing the rotation speed. The exhaust fan 82 is, for example, arranged at the inlet of the exhaust pipe 81, the inside of the exhaust pipe 81, or the outlet of the exhaust pipe 81. In this embodiment, the exhaust fan 82 is arranged inside the exhaust pipe 81. In addition, in this embodiment, the rotation speed means the number of rotations during 1 minute (rpm). In addition, in this embodiment, the exhaust volume means the amount of gas discharged per unit time (volume). The detailed structure of the exhaust device 80 will be described later. The processing unit 10 further includes a cup 90. The cup 90 collects the processing liquid scattered from the substrate W. The cup 90 rises and falls. For example, while the chemical liquid supply unit 30, the first cleaning liquid supply unit 50, and / or the second cleaning liquid supply unit 60 are supplying chemical liquid and / or cleaning liquid to the substrate W, the cup 90 rises vertically upward to the side of the substrate W. In this case, the cup 90 collects the chemical liquid and / or cleaning liquid scattered from the substrate W due to the rotation of the substrate W. Furthermore, when the chemical liquid supply unit 30, the first cleaning liquid supply unit 50, and / or the second cleaning liquid supply unit 60 finishes supplying chemical liquid and / or cleaning liquid to the substrate W, the cup 90 descends vertically downward from the side of the substrate W. The liquid discharge unit 600 (see FIG1 ) includes a liquid discharge device 190. The liquid discharge device 190 discharges the processing liquid recovered by the cup 90 to the outside of the substrate processing apparatus 100. The detailed structure of the liquid discharge device 190 will be described later. The substrate processing apparatus 100 of this embodiment is preferably used for manufacturing semiconductor devices having semiconductors. Typically, in a semiconductor device, a conductive layer and an insulating layer are stacked on a substrate. During semiconductor device manufacturing, the substrate processing apparatus 100 is preferably used for cleaning and / or processing (e.g., etching, property modification, etc.) the conductive and / or insulating layers. Next, the substrate processing method of the substrate processing apparatus 100 will be described with reference to FIG4 . FIG4 is a flow chart showing the substrate processing method of the substrate processing apparatus 100 according to this embodiment. The substrate processing method of the substrate processing apparatus 100 includes steps S101 to S107 . Steps S101 to S107 are executed by the control unit 102 . 4 , in step S101 , a substrate W is loaded into the chamber 11 . Under the control of the control unit 102 , the central robot CR loads the substrate W into the chamber 11 , and the substrate holding unit 20 holds the loaded substrate W. Next, in step S102 , the rotation of the substrate W is started. Under the control of the control unit 102 , the substrate holding unit 20 starts rotating the substrate W while holding the substrate W. Next, in step S103, a chemical solution is supplied to the substrate W to process the substrate W. Under the control of the control unit 102, the chemical solution supply unit 30 supplies the chemical solution (SPM) from the nozzle 36 to the substrate W rotated by the substrate holding unit 20. The control unit 102 stops the chemical solution supply after a specified time has passed since the start of the chemical solution supply. The chemical solution supply unit 30 is an example of the "first supply unit" of the present invention, and the SPM is an example of the "first processing liquid" of the present invention. Next, in step S104, a cleaning liquid is supplied to the substrate W to perform a cleaning process on the substrate W. Under the control of the control unit 102, the first cleaning liquid supply unit 50 or the second cleaning liquid supply unit 60 supplies the cleaning liquid to the substrate W. In this embodiment, the first cleaning liquid supply unit 50 supplies the cleaning liquid (pure water) to the substrate W, while the second cleaning liquid supply unit 60 does not supply the cleaning liquid (warm water) to the substrate W. In this case, the first cleaning liquid supply unit 50 is an example of the "first supply unit" of the present invention, and pure water (DIW) is an example of the "first processing liquid" of the present invention. In addition, the second cleaning liquid supply unit 60 is an example of the "second supply unit" of the present invention, and warm water is an example of the "second processing liquid" of the present invention. Moreover, when a specified time has passed since the start of the supply of the cleaning liquid, the control unit 102 stops the supply of the cleaning liquid. Next, in step S105 , the substrate W is dried. Under the control of the control unit 102 , the substrate holding unit 20 increases the rotation speed of the substrate W, and blows off the cleaning liquid on the substrate W by centrifugal force. Next, in step S106 , the rotation of the substrate W is stopped. The substrate holding portion 20 stops the rotation of the substrate W under the control of the control portion 102 . Next, in step S107, the substrate W is removed from the processing unit 10. Under the control of the control unit 102, the substrate holder 20 releases the substrate W, and the central robot CR removes the substrate W from the chamber 11. Subsequently, the substrate W is transported to the outside of the substrate processing apparatus 100 by the carrier robot IR. As described above, the processing of the substrate W is completed. Here, for ease of understanding, the method of processing one substrate W in one chamber 11 is described. However, since the substrate processing apparatus 100 of this embodiment has, for example, 12 chambers 11, one batch (e.g., 25 substrates) of substrates W can be processed in parallel by the 12 chambers 11. 5 , the sulfuric acid supply unit 410 and the hydrogen peroxide solution supply unit 430 of the chemical solution supply unit 30 will be described. FIG5 is a schematic diagram showing the configuration of the sulfuric acid supply unit 410 and the hydrogen peroxide solution supply unit 430 of the chemical solution supply unit 30 . As shown in FIG5 , the sulfuric acid supply unit 410 supplies sulfuric acid toward the nozzle 36. In this embodiment, the sulfuric acid supply unit 410 supplies sulfuric acid at a temperature higher than room temperature toward the nozzle 36. Specifically, the sulfuric acid supply unit 410 includes a supply tank 411, a circulation pipe 412, a heater 413, a pump 414, a valve 415, and a thermometer 416. Supply tank 411 stores the chemical solution (here, sulfuric acid). Circulation piping 412 is a tubular member such as a pipe. A flow path for the chemical solution is formed within circulation piping 412. Circulation piping 412 has an upstream end 412a and a downstream end 412b. Circulation piping 412 is connected to supply tank 411. Specifically, upstream end 412a and downstream end 412b of circulation piping 412 are connected to supply tank 411. The heater 413 adjusts the temperature of the chemical solution by heating the chemical solution in the circulation pipe 412. The heater 413 maintains the temperature of the chemical solution at a constant temperature range (e.g., 60±5°C) higher than room temperature. The pump 414 delivers the drug solution in the supply tank 411 to the circulation pipe 412. The type of the pump 414 is not particularly limited, for example, it can be an electrically driven pump or an air-driven pump. In this embodiment, the pump 414 is, for example, an air-driven pump. When the pump 414 is actuated, the drug solution in the supply tank 411 is delivered to the upstream end 412a of the circulation pipe 412. The drug solution delivered to the upstream end 412a flows in the circulation pipe 412 and returns to the supply tank 411 from the downstream end 412b. As the pump 414 continues to actuate, the drug solution continues to flow into the circulation pipe 412 from the upstream end 412a toward the downstream end 412b. As a result, the drug solution circulates in the circulation pipe 412. The valve 415 opens and closes the flow path of the circulation pipe 412. The type of the valve 415 is not particularly limited, and in this embodiment, it is an air valve. Thermometer 416 measures the temperature of the chemical solution in supply tank 411. Thermometer 416 outputs the measurement result to control unit 102. Control unit 102 controls heating by heater 413 based on the measurement result of thermometer 416. If the measurement result of thermometer 416 is below a specified temperature range, control unit 102 uses heater 413 to heat the chemical solution. The sulfuric acid supply unit 410 further includes a supply pipe 417 and a valve 418 . The supply pipe 417 branches off from the circulation pipe 412. The supply pipe 417 connects the circulation pipe 412 and the pipe 32. The supply pipe 417 supplies part of the chemical solution flowing through the circulation pipe 412 to the pipe 32. The valve 418 opens and closes the flow path of the supply pipe 417. The type of the valve 418 is not particularly limited, but in this embodiment, it is an air valve. A flow meter 160c is attached to the supply pipe 417. The flow meter 160c measures the amount of sulfuric acid flowing through the supply pipe 417. The flow meter 160c outputs the measurement result to the control unit 102. The sulfuric acid supply unit 410 further includes a cooling water pipe 421 and a valve 422. Cooling water is supplied from a supply source (liquid supply equipment 2003) to the cooling water pipe 421. The cooling water pipe 421 extends from the supply source through the supply tank 411 to the exterior of the substrate processing apparatus 100. The cooling water within the cooling water pipe 421 lowers the temperature of the sulfuric acid within the supply tank 411. Valve 422 opens and closes the flow path of cooling water pipe 421. The type of valve 422 is not particularly limited; in this embodiment, it is a gas valve. Control unit 102 controls the opening and closing of valve 422 based on the measurement results of thermometer 416. If the measurement results of thermometer 416 exceed a specified temperature range, control unit 102 opens valve 422, allowing the cooling water to lower the temperature of the sulfuric acid. A flow meter 160d is attached to the cooling water pipe 421. The flow meter 160d measures the amount of cooling water flowing through the cooling water pipe 421. The flow meter 160d outputs the measurement result to the control unit 102. The hydrogen peroxide solution supply unit 430 supplies hydrogen peroxide solution at room temperature, for example, toward the nozzle 36. Alternatively, the hydrogen peroxide solution supply unit 430 may supply hydrogen peroxide solution having a temperature higher than room temperature toward the nozzle 36. Specifically, the hydrogen peroxide solution supply unit 430 includes a supply pipe 437 and a valve 438. The supply pipe 437 connects the supply source of hydrogen peroxide solution (liquid supply device 2003) and the pipe 32. The supply pipe 437 supplies the pipe 32 with hydrogen peroxide solution from the supply source. The valve 438 opens and closes the flow path of the supply pipe 437. The type of the valve 438 is not particularly limited, and in this embodiment, it is an air valve. A flow meter 160e is attached to the supply pipe 437. The flow meter 160e measures the amount of hydrogen peroxide solution passing through the supply pipe 437. The flow meter 160e outputs the measurement result to the control unit 102. In addition, the sulfuric acid supply unit 410 and the hydrogen peroxide solution supply unit 430 are installed in the fluid cabinet 110 . Next, the hot water supply unit 450 will be described with reference to Fig. 6. Fig. 6 is a schematic diagram showing the structure of the hot water supply unit 450. 6 , the hot water supply unit 450 supplies hot water in a specified temperature range higher than room temperature toward the nozzle 66 . Specifically, the hot water supply unit 450 includes a supply tank 451 , a circulation pipe 452 , a heater 453 , a pump 454 , a valve 455 , and a thermometer 456 . The supply tank 451 stores warm water. The circulation pipe 452 is a tubular member such as a pipe. A flow path for the warm water is formed within the circulation pipe 452. The circulation pipe 452 has an upstream end 452a and a downstream end 452b. The circulation pipe 452 is connected to the supply tank 451. Specifically, the upstream end 452a and the downstream end 452b of the circulation pipe 452 are connected to the supply tank 451. The heater 453 adjusts the temperature of the warm water by heating the warm water in the circulation pipe 452. The heater 453 maintains the temperature of the warm water within a constant temperature range (e.g., 60±5°C) higher than room temperature. The pump 454 delivers the warm water in the supply tank 451 to the circulation pipe 452. The type of the pump 454 is not particularly limited, and for example, it may be an electrically driven pump or an air-driven pump. In this embodiment, the pump 454 is, for example, an air-driven pump. When the pump 454 is actuated, the warm water in the supply tank 451 is delivered to the upstream end 452a of the circulation pipe 452. The warm water delivered to the upstream end 452a flows in the circulation pipe 452 and returns to the supply tank 451 from the downstream end 452b. As the pump 454 continues to actuate, the warm water continues to flow into the circulation pipe 452 from the upstream end 452a toward the downstream end 452b. As a result, the warm water circulates in the circulation pipe 452. The valve 455 opens and closes the flow path of the circulation pipe 452. The type of the valve 455 is not particularly limited, and in this embodiment, it is an air valve. Thermometer 456 measures the temperature of the warm water in supply tank 451. Thermometer 456 outputs the measurement result to control unit 102. Control unit 102 controls heating by heater 453 based on the measurement result of thermometer 456. If the measurement result of thermometer 456 is below a specified temperature range, control unit 102 controls heater 453 to heat the warm water. The hot water supply unit 450 further includes a supply pipe 457 and a valve 458 . The supply pipe 457 branches off from the circulation pipe 452. The supply pipe 457 connects the circulation pipe 452 and the pipe 62. The supply pipe 457 supplies part of the hot water flowing through the circulation pipe 452 to the pipe 62. The valve 458 opens and closes the flow path of the supply pipe 457. The type of the valve 458 is not particularly limited, and in this embodiment, it is an air valve. A flow meter 160f is attached to the supply pipe 457. The flow meter 160f measures the amount of hot water passing through the supply pipe 457. The flow meter 160f outputs the measurement result to the control unit 102. The warm water supply unit 450 further includes a cooling water pipe 461 and a valve 462. Cooling water is supplied from a supply source (liquid supply equipment 2003) to the cooling water pipe 461. The cooling water pipe 461 extends from the supply source through the supply tank 451 to the exterior of the substrate processing apparatus 100. The cooling water within the cooling water pipe 461 lowers the temperature of the warm water within the supply tank 451. Valve 462 opens and closes the flow path of cooling water pipe 461. The type of valve 462 is not particularly limited; in this embodiment, it is an air valve. Control unit 102 controls the opening and closing of valve 462 based on the measurement results of thermometer 456. If the measurement results of thermometer 456 exceed a specified temperature range, control unit 102 opens valve 462, allowing the cooling water to lower the temperature of the warm water. A flow meter 160g is attached to the cooling water pipe 461. The flow meter 160g measures the amount of cooling water flowing through the cooling water pipe 461. The flow meter 160g outputs the measurement result to the control unit 102. In addition, the hot water supply unit 450 is installed in the fluid cabinet 110 . Next, the exhaust device 80 and the drain device 190 will be described with reference to Fig. 7. Fig. 7 is a schematic diagram showing the structure of the exhaust device 80 and the drain device 190 and their surroundings. As shown in Figure 7, the exhaust pipe 81 of the exhaust device 80 includes a common pipe 81a, a first branch pipe 81b, a second branch pipe 81c, and a third branch pipe 81d. The first branch pipe 81b, the second branch pipe 81c, and the third branch pipe 81d are connected to the common pipe 81a. A first gas containing an acidic component, a second gas containing an alkaline component, and a third gas containing an organic component flow through the common pipe 81a. Meanwhile, the first gas containing an acidic component flows through the first branch pipe 81b. The second gas containing an alkaline component flows through the second branch pipe 81c. The third gas containing an organic component flows through the third branch pipe 81d. The first branch pipe 81b, the second branch pipe 81c, and the third branch pipe 81d exhaust gases to the exterior of the substrate processing apparatus 100 (gas exhaust equipment 2004). In this embodiment, a gas containing almost no acid, alkali, or organic components is also circulated through the first branch pipe 81b (downflow when substrates are not being processed, etc.). Therefore, the first gas also includes a gas containing almost no acid, alkali, or organic components. The exhaust device 80 includes an exhaust duct 81 and an exhaust fan 82 (see FIG. 3 ), and further includes a valve 83 a , a valve 83 b , and a valve 83 c . The valve 83a is attached to the first branch pipe 81b. The valve 83a opens and closes the flow path of the first branch pipe 81b. A flow meter 160h is attached to the first branch pipe 81b. The flow meter 160h measures the amount of gas passing through the first branch pipe 81b and outputs the measurement result to the control unit 102. The valve 83b is attached to the second branch pipe 81c. The valve 83b opens and closes the flow path of the second branch pipe 81c. A flow meter 160i is attached to the second branch pipe 81c. The flow meter 160i measures the amount of gas passing through the second branch pipe 81c and outputs the measurement result to the control unit 102. The valve 83c is attached to the third branch pipe 81d. The valve 83c opens and closes the flow path of the third branch pipe 81d. A flow meter 160j is attached to the third branch pipe 81d. The flow meter 160j measures the amount of gas passing through the third branch pipe 81d and outputs the measurement result to the control unit 102. The types of valves 83a to 83c are not particularly limited, but they are air valves in this embodiment. The liquid discharge device 190 includes a pipe 191, a liquid discharge tank 192, a valve 193, and a pump 194. The upstream end of the pipe 191 is connected to the chamber 11, and the downstream end of the pipe 191 is disposed outside the substrate processing apparatus 100. The pipe 191 discharges the liquid recovered by the cup 90 to the outside of the substrate processing apparatus 100 (liquid discharge equipment 2005). The drain tank 192 is disposed midway along the pipe 191 . The drain tank 192 stores the liquid discharged from the chamber 11 . The valve 193 is attached to the pipe 191. Specifically, the valve 193 is attached to the upstream portion of the pipe 191 relative to the drain tank 192. The valve 193 opens and closes the flow path of the pipe 191. Pump 194 is installed in piping 191. Specifically, pump 194 is installed in the portion of piping 191 downstream of drain tank 192. Pump 194 delivers liquid from drain tank 192 to the exterior of substrate processing apparatus 100. The type of pump 194 is not particularly limited; for example, it may be an electrically driven pump or a pneumatically driven pump. In this embodiment, pump 194 is, for example, a pneumatically driven pump. The drain device 190 further includes a thermometer 195, a cooling water pipe 196, and a valve 197. The thermometer 195 measures the temperature of the processing liquid in the drain tank 192. The thermometer 195 outputs the measurement result to the control unit 102. Cooling water is supplied from a supply source (liquid supply equipment 2003) to the cooling water pipe 196. The cooling water pipe 196 extends from the supply source through the drain tank 192 to the outside of the substrate processing apparatus 100. The cooling water in the cooling water pipe 196 lowers the temperature of the liquid in the drain tank 192. Valve 197 opens and closes the flow path of cooling water pipe 196. The type of valve 197 is not particularly limited; in this embodiment, it is a gas valve. Control unit 102 controls the opening and closing of valve 197 based on the measurement result of thermometer 195. When the measurement result of thermometer 195 exceeds a specified temperature (e.g., 120°C), control unit 102 opens valve 197, allowing the cooling water to lower the temperature of the liquid. A flow meter 160 k is attached to the cooling water pipe 196. The flow meter 160 k measures the amount of cooling water flowing through the cooling water pipe 196. The flow meter 160 k outputs the measurement result to the control unit 102. Next, the control unit 102 of this embodiment will be described. As described above, the control unit 102 predicts the transport volume when processing substrates W based on the recipe input to the input unit 180. In this embodiment, the transport volume includes the processing transport volume used according to the processing of substrates W and the standby transport volume used regardless of the processing of substrates W. It can also be said that the processing transport volume is the transport volume directly used for processing substrates W, and the standby transport volume is the transport volume not directly used for processing substrates W. Alternatively, it can be said that the processing transport volume is the transport volume used according to the recipe, and the standby transport volume is the transport volume used regardless of the recipe. The processing throughput includes, for example, the processing power, the processing gas supply, the processing liquid supply, the processing gas discharge, and the processing liquid discharge, which will be described later. The standby throughput includes, for example, the standby power, the standby gas supply, the standby liquid supply, the standby gas discharge, and the standby liquid discharge, which will be described later. Specifically, the control unit 102 calculates the amount of power used by each component of the substrate processing apparatus 100. This power is, for example, the product of the power consumption of each component of the substrate processing apparatus 100 and the time. In this embodiment, the control unit 102 includes processing power used by processing substrates W and standby power used unrelated to substrate processing. The processing power consumption includes, for example, the power consumed by the spin motor 24 of the substrate holding unit 20. Furthermore, the processing power consumption includes, for example, the power consumed by the chemical supply unit 30 to open and close the valves 418 and 438 when supplying chemical solution to the substrate W. Furthermore, the processing power consumption includes, for example, the power consumed by driving the pump 414 of the chemical supply unit 30. Furthermore, the processing power consumption includes, for example, the power consumed by driving the nozzle moving unit 38. The standby power includes, for example, the power consumed by the chamber 11 that does not accommodate the substrate W when the substrate W is replaced. In addition, the standby power includes, for example, the power consumed by the supply unit for driving the processing liquid that is not used for substrate processing. Specifically, the recipe input to the input unit 180 is a recipe R1 that supplies SPM and pure water (DIW) at room temperature to the substrate W, while not supplying hot water (HDIW). When the substrate W is processed according to the recipe R1, hot water is not used for processing the substrate W, but the heater 453 of the hot water supply unit 450 consumes power to maintain the hot water at a constant temperature. In this case, the power consumed to heat the hot water. In addition, when executing a recipe different from the recipe R1, hot water is supplied to the substrate W. Furthermore, the control unit 102 calculates the amount of gas supplied by the gas supply unit 300 (such as the blower unit 12 and the inert gas supply unit 70) to each component of the substrate processing apparatus 100. The amount of gas supplied by the gas supply unit 300 to each component of the substrate processing apparatus 100 is, for example, the product of the gas flow rate and time in each component of the substrate processing apparatus 100. In this embodiment, the control unit 102 calculates the amount supplied by the gas supply unit 300 for each type of gas. For example, the control unit 102 calculates the amount of clean air and nitrogen supplied by the gas supply unit 300. In addition, in this embodiment, the control unit 102 includes the gas amount used according to the processing of the substrate W (hereinafter sometimes described as the processing gas supply amount) and the gas amount used regardless of the processing of the substrate W (hereinafter sometimes described as the standby gas supply amount). The gas supply amount during processing includes, for example, the amount of nitrogen gas supplied from the nozzle 76 of the inert gas supply unit 70 to the lower surface Wb of the substrate W, and the amount of clean air used to open and close the valves 418 and 438 when the chemical supply unit 30 supplies chemical liquid to the substrate W. The standby gas supply rate includes, for example, the amount of clean air supplied from the air supply unit 12 into the chamber 11 . Furthermore, the control unit 102 calculates the amount of liquid supplied by the liquid supply unit 400 (chemical liquid supply unit 30, first cleaning liquid supply unit 50, and second cleaning liquid supply unit 60) to each component of the substrate processing apparatus 100. The amount of liquid supplied by the liquid supply unit 400 to each component of the substrate processing apparatus 100 is, for example, the product of the flow rate of the liquid in each component of the substrate processing apparatus 100 and the time. In this embodiment, the control unit 102 calculates the amount supplied by the liquid supply unit 400 for each type of liquid. For example, the control unit 102 calculates the amount of hydrogen peroxide solution, sulfuric acid, cooling water (DIW), and warm water (HDIW) supplied by the liquid supply unit 400. In addition, in this embodiment, the control unit 102 includes the amount of liquid used according to the processing of the substrate W (hereinafter sometimes described as the liquid supply amount during processing) and the amount of liquid used regardless of the processing of the substrate W (hereinafter sometimes described as the liquid supply amount during standby). The amount of liquid supplied during processing includes, for example, the amount of hydrogen peroxide supplied from the hydrogen peroxide supply unit 430 to the nozzle 76 and the amount of pure water (DIW) supplied to the substrate W by the first cleaning liquid supply unit 50 . The liquid supply amount during standby includes, for example, the amount of cooling water flowing through the cooling water pipe 421 of the sulfuric acid supply unit 410 and the amount of cooling water flowing through the cooling water pipe 461 of the hot water supply unit 450 . Furthermore, the control unit 102 calculates the amount of gas discharged from the gas discharge unit 500 (exhaust system 80) to the exterior of the substrate processing apparatus 100. The amount of gas discharged from the gas discharge unit 500 to the exterior of the substrate processing apparatus 100 is, for example, the product of the flow rate of each gas in the first branch pipe 81b, the second branch pipe 81c, and the third branch pipe 81d of the exhaust system 80 and time. In this embodiment, the control unit 102 calculates the amount discharged from the gas discharge unit 500 for each of the first gas, the second gas, and the third gas. In addition, in this embodiment, the control unit 102 includes the amount of gas exhausted according to the processing of the substrate W (hereinafter sometimes described as the gas exhaust amount during processing) and the amount of gas exhausted regardless of the processing of the substrate W (hereinafter sometimes described as the gas exhaust amount during standby). The amount of gas exhausted during processing includes, for example, the amount of gas flowing through the first branch pipe 81 b , the second branch pipe 81 c , and the third branch pipe 81 d connected to the chamber 11 in which the substrate W is accommodated and processed. The standby gas exhaust volume includes, for example, the volume of gas flowing through the first branch pipe 81b, the second branch pipe 81c, and the third branch pipe 81d connected to the chamber 11 that does not accommodate the substrate W when the substrate W is replaced. Furthermore, the control unit 102 calculates the amount of liquid discharged from the liquid discharge unit 600 (liquid discharge device 190) to the outside of the substrate processing apparatus 100. The amount of liquid discharged from the liquid discharge unit 600 to the outside of the substrate processing apparatus 100 is, for example, a value obtained by multiplying the flow rate of the liquid in the pipe 191 of the liquid discharge device 190 by time. In this embodiment, the control unit 102 includes the amount of liquid discharged according to the processing of the substrate W (hereinafter sometimes referred to as the processing liquid discharge amount) and the amount of liquid discharged regardless of the processing of the substrate W (hereinafter sometimes referred to as the standby liquid discharge amount). The amount of liquid discharged during processing includes, for example, the amount of liquid flowing through the pipe 191 connected to the chamber 11 that accommodates the substrate W but does not process it. The standby liquid discharge amount includes, for example, the amount of liquid flowing through the pipe 191 when no substrate W is being processed in any chamber 11. In this embodiment, the standby liquid discharge amount is, for example, zero. In this embodiment, as described above, the control unit 102 predicts the processing throughput and the standby throughput based on the input recipe as the throughput required for processing the substrates W. Therefore, in addition to predicting the processing throughput that can be read to some extent based on the input recipe, the control unit 102 can also predict the standby throughput that cannot be read from the recipe. Furthermore, as described above, the standby feed rate when processing a substrate W based on the input recipe R1 includes the feed rate of the warm water supply unit 450 that is driven (e.g., heated) but not supplying liquid (warm water) to the substrate W. Therefore, the control unit 102 can more accurately predict the feed rate used by the substrate processing apparatus 100 when processing a substrate W. Next, an image displayed on the display unit 170 will be described with reference to Fig. 8. Fig. 8 is a diagram showing an example of an image displayed on the display unit 170. 8 , the display unit 170 displays an image i100 for setting and / or changing a recipe. The image i100 includes a name input field i101, a process content input field i102, a button i103, and a prediction result display field i104. The name input field i101 is where the user enters the recipe name. The user enters the recipe name by operating the input unit 180. Alternatively, the user can use a keyboard, for example, to enter the recipe name. Furthermore, the name input field i101 can be a drop-down menu, allowing the user to select (enter) the name of a previously registered recipe. The processing content input field i102 is where the user enters the processing details for the substrate W. The processing details include, for example, the rotational speed of the substrate W, the type of processing liquid, the amount of processing liquid ejected, and the duration of the processing liquid ejection. For example, the vertical axis "1, 2, 3..." of the processing content input field i102 displays the processing steps, while the horizontal axis "A, B, C..." each displays any one of the multiple elements included in the processing content (such as the rotational speed of the substrate W). The user enters the processing details by operating the input unit 180. Alternatively, the user can use a keyboard or other device to enter the processing details. Furthermore, the processing content input field i102 displays the processing content corresponding to the name entered in the name input field i101. Specifically, when the user enters the name of a registered recipe in the name input field i101 or selects the name of a registered recipe using the drop-down menu, the display unit 170 displays the processing content corresponding to the recipe in the processing content input field i102. In this embodiment, the user can change the processing content displayed in the processing content input field i102 using the input unit 180. When the user changes the processing content, the changed processing content is displayed in the processing content input field i102. In this embodiment, a recipe obtained by a user inputting processing details into the processing details input field i102 is referred to as a "recipe input to the input unit 180." Furthermore, a recipe displayed in the processing details input field i102 by a user inputting a name into the name input field i101 is referred to as a "recipe input to the input unit 180." That is, in this embodiment, recipes input to the input unit 180 include both recipes obtained by a user inputting processing details into the name input field i101 and recipes for which a user inputted a name into the name input field i101. Button i103 is used to calculate the transport volume corresponding to the recipe (processing content) displayed in the processing content input field i102. Specifically, when the user presses button i103, the control unit 102 calculates and predicts the transport volume required by the substrate processing apparatus 100 based on the recipe displayed in the processing content input field i102. At this time, the control unit 102 can calculate the transport volume required to process a single substrate W, or it can calculate the transport volume required to process a batch (here, 25 substrates) of substrates W. In this embodiment, the control unit 102 calculates the transport volume required to process a batch (here, 25 substrates) of substrates W. The method for calculating the transport volume by the control unit 102 will be described later. The predicted delivery amount is displayed in the prediction result display column i104. Specifically, when the delivery amount corresponding to the recipe displayed in the processing content input column i102 is calculated and predicted, the control unit 102 controls the display unit 170 so that the prediction result is displayed in the prediction result display column i104. Next, the images displayed in the prediction result display section i104 will be described with reference to Figures 9 to 14. Figures 9 to 14 are diagrams showing examples of images displayed in the prediction result display section i104. As shown in Figure 9 , display unit 170 displays the predicted delivery volume based on the recipe input to input unit 180 . Specifically, display unit 170 displays the predicted power consumption, predicted clean air consumption, predicted nitrogen consumption, predicted exhaust gas consumption, predicted cooling water consumption, and predicted warm water consumption. In Figure 9 , the power consumption is the sum of the processing power consumption and the standby power consumption. In this embodiment, as shown in FIG10 , the display unit 170 can also separately display the processing throughput used for processing substrates W and the standby throughput used regardless of substrate W processing. Specifically, the control unit 102 calculates the processing throughput and the standby throughput based on the recipe input to the input unit 180 as the throughput required for processing substrates W. Furthermore, the control unit 102 controls the display unit 170 to display the processing throughput and the standby throughput separately. In this embodiment, as described above, the user can easily know the processing and standby transport volumes by displaying the processing and standby transport volumes on the display unit 170. Therefore, when the user changes a recipe, for example, the user can easily know the amount of increase or decrease in the processing and standby transport volumes. Furthermore, in this embodiment, as shown in FIG11 , the display unit 170 can also display the delivery amount after converting the predicted amount of clean air, the predicted amount of nitrogen, the predicted amount of exhaust, the predicted amount of cooling water, and the predicted amount of warm water into electrical energy. Specifically, the delivery amount includes at least one of the amount of clean air, the amount of nitrogen, the amount of exhaust, the amount of cooling water, and the amount of warm water, and the control unit 102 converts at least one of the amount of clean air, the amount of nitrogen, the amount of exhaust, the amount of cooling water, and the amount of warm water into electrical energy. In this embodiment, the delivery amount includes the amount of clean air, the amount of nitrogen, the amount of exhaust, the amount of cooling water, and the amount of warm water, and the control unit 102 converts the amount of clean air, the amount of nitrogen, the amount of exhaust, the amount of cooling water, and the amount of warm water into electrical energy. The display unit 170 then displays the converted electrical energy as the delivery amount. 9 and 10 , the display unit 170 also displays the amount of power used by each unit of the substrate processing apparatus 100 . Furthermore, the display unit 170 may also display the power consumption of each unit of the substrate processing apparatus 100 and the total value of the converted power consumption. The method for converting the amount of clean air, nitrogen, exhaust, cooling water, and hot water into electrical energy is not particularly limited. For example, the calculation formula of SEMI (Semiconductor Equipment and Materials International) standard S23 may be used, or a user-defined calculation formula or coefficient may be used. Such calculation formulas or coefficients may also be pre-stored in the memory unit 103. In addition, when the predicted amount of clean air, the predicted amount of nitrogen, the predicted amount of exhaust gas, the predicted amount of cooling water, and the predicted amount of warm water are converted into electrical energy and displayed on the display unit 170, as illustrated using Figure 10, the processing delivery volume and the standby delivery volume can also be displayed separately on the display unit 170. In this embodiment, as described above, the control unit 102 can also convert at least one of the clean air volume, exhaust volume, cooling water volume, and warm water volume into electrical energy. The display unit 170 can also display the electrical energy as the delivery volume. This configuration allows users to compare environmental loads using the same indicator (electricity). This allows users to easily change recipes to reduce environmental load, for example. Furthermore, in this embodiment, as shown in FIG12 , the display unit 170 can also display the transport amount after converting the predicted amount of electricity, the predicted amount of clean air, the predicted amount of nitrogen, the predicted amount of exhaust, the predicted amount of cooling water, and the predicted amount of warm water into carbon dioxide emissions. Specifically, the transport amount includes at least one of the amount of electricity, the amount of clean air, the amount of nitrogen, the amount of exhaust, the amount of cooling water, and the amount of warm water, and the control unit 102 converts at least one of the amount of electricity, the amount of clean air, the amount of nitrogen, the amount of exhaust, the amount of cooling water, and the amount of warm water into carbon dioxide emissions. In this embodiment, the transport amount includes the amount of electricity, the amount of clean air, the amount of nitrogen, the amount of exhaust, the amount of cooling water, and the amount of warm water, and the control unit 102 converts the amount of electricity, the amount of clean air, the amount of nitrogen, the amount of exhaust, the amount of cooling water, and the amount of warm water into carbon dioxide emissions. Furthermore, the display unit 170 displays the converted carbon dioxide emission amount as the delivery amount. Furthermore, the display unit 170 may also display the total value of the converted carbon dioxide emissions. The method for converting the amount of electricity, clean air, nitrogen, exhaust gas, cooling water, and hot water into carbon dioxide emissions is not particularly limited. For example, the conversion coefficients disclosed by the Ministry of Economy, Trade and Industry of Japan may be used, or user-defined calculation formulas or coefficients may be used. These calculation formulas or coefficients may also be pre-stored in the memory unit 103. In addition, when the predicted amount of clean air, the predicted amount of nitrogen, the predicted amount of exhaust gas, the predicted amount of cooling water, and the predicted amount of warm water are converted into carbon dioxide emissions and displayed on the display unit 170, as illustrated in Figure 10, the processed delivery volume and the standby delivery volume can also be displayed separately on the display unit 170. In this embodiment, as described above, the control unit 102 can also convert at least one of the power consumption, clean air volume, exhaust volume, cooling water volume, and warm water volume into carbon dioxide emissions. The display unit 170 can also display carbon dioxide emissions as the delivery volume. With this configuration, users can compare environmental loads using the same indicator (carbon dioxide emissions). This allows users to easily change recipes to reduce environmental load, for example. Furthermore, in this embodiment, as shown in FIG13 , when multiple recipes are input into the input unit 180, the display unit 170 can also compare and display multiple delivery amounts predicted based on the multiple recipes. Specifically, the display unit 170 can also display the delivery amounts based on the multiple recipes (recipe R1, recipe R2) side by side on a single screen. In this embodiment, as described above, when multiple recipes are input into input unit 180, control unit 102 predicts the delivery amounts for the multiple recipes, and display unit 170 displays the predicted delivery amounts. For example, when a user creates a new recipe, this configuration allows for easy comparison of the delivery amount of the new recipe with the delivery amounts of previously registered recipes. Furthermore, the user can reduce environmental impact by, for example, using a recipe with a lower delivery amount. Furthermore, in this embodiment, when a plurality of recipes are input into the input unit 180, the display unit 170 can also highlight the parts that are different from each other in the plurality of recipes. Specifically, as shown in FIG14 , when a plurality of (here, two) recipes (recipe R1, recipe R2) are input into the input unit 180, the control unit 102 can also compare the plurality of recipes, for example, by controlling the display unit 170 so that the parts that are different are surrounded by a thick frame of a color other than black (e.g., yellow). The highlighting of the frame, etc. can be performed on both of the two recipes, or only on one of the two recipes. In addition, the control unit 102 can also control the display unit 170 so that only the recipe whose processing content has been changed is displayed. In this case, the highlighting of the changed part of the frame, etc. is performed only on the one recipe being displayed. In this embodiment, as described above, when multiple recipes are input into the input unit 180, the display unit 170 highlights the differences between the multiple recipes, allowing the user to easily identify the differences. This allows the user to easily compare the changed processing details and the delivery volume, for example. This allows the user to easily determine which processing details should be modified to reduce the delivery volume. In the examples shown in Figures 9 to 14 , only the power usage predicted by the control unit 102 is displayed, but the present invention is not limited to this. For example, after a substrate W is actually processed using a user-entered recipe, the actual transport throughput may be displayed. In this case, both the predicted transport throughput and the actual transport throughput may be displayed. Next, referring to Figure 15 , the method for displaying the predicted delivery volume based on the input recipe will be described. Figure 15 is a flow chart illustrating the display method of this embodiment. In this embodiment, the method for displaying the predicted delivery volume includes steps S201 to S203. Step S201 is an example of the "acceptance process" of the present invention. Step S202 is an example of the "prediction process" of the present invention. Step S203 is an example of the "display process" of the present invention. As shown in Figure 15, in step S201, the input unit 180 accepts user input. Specifically, the user enters at least one recipe through the input unit 180. For example, the user enters the processing details of the recipe through the input unit 180. Thus, the input unit 180 accepts the user input and outputs a signal corresponding to the accepted processing details to the control unit 102. Based on the user input, the control unit 102 controls the display unit 170 to update the images displayed in the name input field i101 and the processing details input field i102. Next, in step S202, the control unit 102 calculates the transport rate based on the input recipe. Specifically, when the user presses button i103, the control unit 102 calculates and predicts the transport rate when processing substrates W (here, 25 substrates) based on the recipe displayed in the processing content input field i102. Next, in step S203, the display unit 170 displays the predicted conveying amount. Specifically, the control unit 102 controls the display unit 170 to display the predicted conveying amount. Thus, for example, images shown in FIG. 9 to FIG. 14 are displayed on the display unit 170. Next, the learned model M will be described with reference to FIG16 . FIG16 is a block diagram of the display control device 101 . In this embodiment, the control unit 102 calculates the transport amount using the learned model M. Specifically, the memory unit 103 stores the learned model M and the recipe R. The learned model M is used to predict the transport amount required to process a substrate W based on the input recipe R. The control unit 102 inputs the recipe R input to the input unit 180 into the learned model M. This outputs the transport amount from the learned model M. In this embodiment, the control unit 102 outputs the transport amount by inputting the processing content displayed in the processing content input field i102 into the learned model M. Next, referring to FIG. 16 , a method for generating a learned model M will be described. Based on a specified recipe R, the control unit 102 stores the measurement results output from the power meter 150 and flow meter 160 during actual processing of substrates W (here, a batch of substrates W) in the memory unit 103 , associating the measurement results with the recipe R for the processed substrates W. The control unit 102 processes a plurality of batches based on the plurality of recipes R, and stores the plurality of measurement results and the plurality of recipes R in the learning data set 103 a by associating them. The number of pairs of measurement results and recipes R included in the learning data set 103 a can range from tens to hundreds, for example. The control unit 102 performs machine learning based on the data and computer program stored in the memory unit 103. Specifically, the control unit 102 performs machine learning using the learning data set 103a and the learning program. This generates a learned model M. The learning program is a program for executing a machine learning algorithm that discovers constant rules from the learning data set 103a and generates a learned model M that represents the discovered rules. The control unit 102 executes the learning program, adjusting the parameters of the inference program through machine learning based on the learning data set 103a. As a result, the learned model M is generated. The control unit 102 causes the memory unit 103 to store the generated learned model M. The machine learning algorithm is not particularly limited as long as it is supervised machine learning, and may include, for example, a decision tree, nearest neighbor method, naive Bayesian classifier, support vector machine, or neural network. Therefore, the learned model M includes a decision tree, nearest neighbor method, naive Bayesian classifier, support vector machine, or neural network. For example, a neural network includes an input layer, one or more intermediate layers, and an output layer. Specifically, the neural network is a deep neural network (DNN), a recurrent neural network (RNN), or a convolutional neural network (CNN), which performs deep learning. For example, a deep neural network includes an input layer, multiple intermediate layers, and an output layer. Next, the update of the learned model M and the learning data set 103a will be described. In this embodiment, for example, the learned model M and the learning data set 103a are updated every time one lot of substrates W is processed. Specifically, each time one batch of substrates W is processed, the control unit 102 associates the measurement results output from the power meter 150 and the flow meter 160 with the recipe R for processing the substrates W, and adds the results to the learning data set 103 a . Furthermore, the control unit 102 further performs machine learning based on the updated learning data set 103a to update the learned model M. In this embodiment, the control unit 102 further performs machine learning using the additional measurement results and the recipe R to update the learned model M. This further improves the prediction accuracy using the learned model M. The embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the above embodiments and can be implemented in various forms without departing from the scope of the present invention. Furthermore, the multiple components disclosed in the above embodiments can be appropriately modified. For example, some of the components shown in one embodiment can be added to the components of another embodiment, or some of the components shown in one embodiment can be deleted from another embodiment. The drawings primarily schematically illustrate the various components to facilitate understanding of the invention. The thickness, length, number, and spacing of the components shown in the drawings may differ from the actual configuration for ease of illustration. Furthermore, the configurations of the components shown in the above embodiments are merely examples and are not intended to be limiting. Various modifications may be made without departing from the substantial effects of the present invention. For example, in the above embodiment, the substrate processing apparatus 100 is shown as an example of a single-wafer type apparatus that processes substrates W one by one, but the present invention is not limited thereto. The substrate processing apparatus 100 may also be a so-called batch type apparatus that processes a plurality of substrates W at once. Furthermore, in the above embodiment, an example is described in which the control unit 102 of the substrate processing apparatus 100 generates or updates the learned model M. However, the present invention is not limited to this. For example, a learning device capable of transmitting and receiving data with the substrate processing apparatus 100 may be provided. Furthermore, the control unit of the learning device may also generate or update the learned model M. In this case, the substrate processing apparatus 100 and the learning device may constitute a substrate processing system. Furthermore, in the above embodiment, an example in which the control unit 102 predicts the throughput using the learned model M obtained through machine learning has been described. However, the present invention is not limited thereto. For example, a calculation formula for predicting the processing throughput and the standby throughput may be created in advance based on the measurement results output from the power meter 150 and the flow meter 160 during past processing of substrates W and the recipes for processing the substrates W, and the throughput may be predicted using this calculation formula. Furthermore, in the above embodiment, the transport amount includes the processing transport amount and the standby transport amount, but the present invention is not limited thereto. For example, the transport amount may include the processing transport amount but not the standby transport amount. Furthermore, in the above embodiment, FIG14 shows an example of highlighting the different portions of multiple recipes, but the present invention is not limited to this. For example, when modifying a base recipe, the intention is to reduce the feed rate and thus shorten the etching process time. In this case, there is a risk that the desired etching results may not be achieved. Therefore, the modified portions of the recipe that contribute to the failure to achieve the desired results can be further highlighted, for example, using red. Alternatively, only the portions of the modified recipe that contribute to the failure to achieve the desired results can be highlighted. The present invention can be used in the field of processing substrates. 10: Processing unit 11: Chamber 12: Air supply unit 20: Substrate holding portion 21: Spin base 22: Chuck member 23: Shaft 24: Spin motor 25: Housing 30: Chemical liquid supply portion 32: Piping 36: Nozzle 38: Nozzle moving portion 50: First cleaning liquid supply portion 52: Piping 54: Valve 56: Nozzle 58: Nozzle moving portion 60: Second cleaning liquid supply portion 62: Piping 66: Nozzle 68: Nozzle moving portion 70: Inert gas supply portion 72: Piping 74: Valve 76: Nozzle 80: Exhaust device 81: Exhaust pipe 81a: Common pipe 81b: First branch pipe 81c: Second branch pipe 81d: Third branch pipe 82: Exhaust fan 83a: Valve 83b: Valve 83c: Valve 90: Cup 100: Substrate processing device 101: Control device 102: Control unit 103: Flow meter unit 103a: Learning material set 110: Fluid cabinet 120: Fluid box 150: Power meter 160: Flow meter 160a: Flow meter 160b: Flow meter 160c: Flow meter 160d: Flow meter 160e: Flow meter 160f: Flow meter 160g: Flow meter 160h: Flow meter 160i: Flow meter 160j: Flow meter 160k: Flow meter 170: Display unit 180: Input unit 190: Drain device 191: Piping 192: Drain tank 193: Valve 194: Pump 195: Thermometer 196: Cooling water piping 197: Valve 200: Power supply unit 300: Gas supply unit 400: Liquid supply unit 410: Sulfuric acid supply unit 411: Supply tank 412: Circulation piping 412a: Upstream end 412b: Downstream end 413: Heater 414: Pump 415: Valve 416: Thermometer 417: Supply piping 418: Valve 421: Cooling water piping 422: Valve 430: Hydrogen peroxide solution supply unit 437: Supply piping 438: Valve 450: Hot water supply unit 451: Supply tank 452: Circulation piping 452a: Upstream end 452b: Downstream end Section 453: Heater 454: Pump 455: Valve 456: Thermometer 457: Supply Pipe 458: Valve 461: Cooling Water Pipe 462: Valve 500: Gas Exhaust Section 600: Liquid Exhaust Section 2000: Conveying Equipment 2001: Power Supply Equipment 2002: Gas Supply Equipment 2003: Liquid Supply Equipment 2004: Gas Exhaust Equipment 2005: Liquid Exhaust Equipment AX: Rotation Axis CR: Center Robot IR: Carrier Robot i100: Image i101: Name Input Field i102: Processing Content Input Field i103: Button i104: Prediction Result Display Field LP: Loading Port M: Learned Model R: RecipeR1: Recipe R2: Recipe S101: Step S102: Step S103: Step S104: Step S105: Step S106: Step S107: Step S201: Step S202: Step S203: Step TW: Tower W: Substrate Wa: Upper surface Wb: Lower surface FIG1 is a diagram showing the substrate processing apparatus and conveying equipment of this embodiment. FIG2 is a schematic diagram of the substrate processing apparatus of this embodiment. FIG3 is a schematic diagram of the processing unit of this embodiment. FIG4 is a flow chart showing the substrate processing method of the substrate processing apparatus of this embodiment. FIG5 is a schematic diagram showing the structure of the sulfuric acid supply unit and the hydrogen peroxide solution supply unit of the chemical liquid supply unit. FIG6 is a schematic diagram showing the structure of the warm water supply unit. FIG7 is a schematic diagram showing the structure of the exhaust device and the liquid discharge device. FIG8 is a diagram showing an example of an image displayed on the display unit. FIG9 is a diagram showing an example of an image displayed in the prediction result display column. FIG10 is a diagram showing an example of an image displayed in the prediction result display column. FIG11 is a diagram showing an example of an image displayed in the prediction result display column. FIG12 is a diagram showing an example of an image displayed in the prediction result display column. FIG13 is a diagram showing an example of an image displayed in the prediction result display column. FIG14 is a diagram showing an example of an image displayed in the prediction result display column. Fig. 15 is a flow chart showing the display method of this embodiment. Fig. 16 is a block diagram of the display control device. 100: substrate processing device 101: Control device 102: Control Department 103: Flow meter 150: Electricity meter 160: Flow meter 170: Display unit 180: Input 200: Power supply unit 300: Gas supply unit 400: Liquid supply unit 500: Gas exhaust part 600: Liquid discharge part 2000: Conveying equipment 2001: Power supply equipment 2002: Gas supply equipment 2003:Liquid supply equipment 2004: Gas Exhaust Equipment 2005:Liquid discharge equipment

Claims

1. A substrate processing apparatus comprising: an input unit that accepts input from a user for a formula specifying the processing content; a prediction unit that calculates and predicts the amount of material to be used when processing the substrate based on the input formula; and a display unit that displays the predicted amount of material to be used.

2. The substrate processing apparatus of claim 1, wherein the prediction unit predicts the amount of the above-mentioned materials used when processing a batch of the above-mentioned substrates containing one or more of the above-mentioned substrates, based on the above-mentioned formula input above.

3. The substrate processing apparatus of claim 1, wherein the prediction unit predicts, based on the above-input formula, the processing amount used for processing the substrate and the standby amount used unrelated to processing the substrate.

4. The substrate processing apparatus of claim 3, wherein the display unit displays the processing amount and the standby amount.

5. The substrate processing apparatus of claim 3, comprising: a first supply unit that supplies a first processing liquid to the substrate when executing the input formula; and a second supply unit that does not supply a second processing liquid to the substrate when executing the input formula, but supplies the second processing liquid to the substrate when executing a formula different from the input formula; and the standby usage when processing the substrate based on the input formula includes the usage for driving the second supply unit.

6. The substrate processing apparatus according to any one of claims 1 to 5, wherein when a plurality of the above-mentioned formulas are input to the input unit, the prediction unit predicts a plurality of the above-mentioned amounts based on the plurality of formulas; and the display unit displays the predicted plurality of the above-mentioned amounts.

7. The substrate processing apparatus of claim 6, wherein the display unit displays the input formula; when multiple formulas are input to the input unit, the differences between the multiple formulas are highlighted.

8. The substrate processing apparatus of any one of claims 1 to 5, wherein the above-mentioned amount includes at least one of clean air volume, exhaust volume, cooling water volume and warm water volume; and the prediction unit converts at least one of the above-mentioned clean air volume, exhaust volume, cooling water volume and warm water volume into electricity; and the display unit displays the above-mentioned electricity volume as the above-mentioned amount.

9. A substrate processing apparatus according to any one of claims 1 to 5, wherein the above-mentioned consumption includes at least one of power, clean air volume, exhaust volume, cooling water volume and warm water volume; and the above-mentioned prediction unit converts at least one of the above-mentioned power, clean air volume, exhaust volume, cooling water volume and warm water volume into carbon dioxide emission volume; and the above-mentioned display unit displays the carbon dioxide emission volume as the above-mentioned consumption.

10. A display method comprising the following processes: accepting input from a user of a formula for a specified processing content; calculating and predicting the amount to be used when processing a substrate based on the input formula; and displaying the predicted amount of the formula.

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