High-pressure substrate processing apparatus

Abstract

This invention discloses a high-voltage substrate processing apparatus, comprising: an internal chamber configured to contain a substrate to be processed and a reaction gas that generates a first pressure higher than atmospheric pressure; an external chamber comprising: a housing for containing the internal chamber; an outer door defining, together with the housing and the internal chamber, a protective space for containing a protective gas that generates a second pressure relative to the first pressure, one of the housing and the outer door having a mounting groove formed on a corresponding surface opposite to the other of the housing and the outer door; and a sealing unit contained in the mounting groove and in contact with the other of the housing and the outer door, such that the protective gas is isolated from external gas, and having a venting channel extending along an intersecting direction intersecting the corresponding surface to discharge the protective gas flowing into the mounting groove.

Description

High voltage substrate processing device The present invention relates to an apparatus for processing a substrate with high voltage. Generally, during the manufacturing process of semiconductor devices, semiconductor wafers undergo various processing. Examples of such processing include oxidation, nitriding, deposition, and ion implantation. There are also heat treatment processes, such as hydrogen or deuterium heating, used to improve the interface properties of semiconductor devices. Process gases are supplied to the chamber for processing, and these gases act on the semiconductor wafers. To prevent leakage of the process gases, the chamber must be airtight. To ensure airtightness, seals can be installed between the interconnected structures within the chamber. The seal seals the gaps between the structures to prevent process gases from flowing out of the chamber or to prevent external atmosphere from entering the chamber. However, when the high-pressure gas inside the chamber flows into the mounting groove where the seal is installed, a pressure difference is created inside and outside the mounting groove when the chamber is opened. This pressure difference exerts a force on the seal, causing it to lift or fall out of the mounting groove. If the seal falls out of place, the airtightness of the chamber will be affected. The background technology described above is technical information possessed by the inventor in order to derive embodiments of the present invention or obtained in the process of deriving the present invention, and may not necessarily be considered as publicly known technology disclosed to the public prior to this application. One object of the present invention is to provide a high-voltage substrate processing apparatus that prevents the structure used to maintain the airtightness of the chamber from being lifted by air pressure when the chamber is opened. Another object of the present invention is to provide a high-voltage substrate processing apparatus capable of completely maintaining the airtightness of the chamber. [Solutions to the problem] To achieve the aforementioned objectives, a high-voltage substrate processing apparatus according to one aspect of the present invention may include: an internal chamber configured to contain a substrate to be processed and a reaction gas that generates a first pressure higher than atmospheric pressure; an external chamber comprising: a housing for containing the internal chamber; an outer door that, together with the housing and the internal chamber, defines a protective space for containing a protective gas that generates a second pressure relative to the first pressure, one of the housing and the outer door having a mounting groove formed on a corresponding surface opposite to the other of the housing and the outer door; and a sealing unit comprising: a first pressing portion pressing against the other; a second pressing portion pressing against the bottom surface of the mounting groove; and a venting channel extending along an intersecting direction intersecting the corresponding surface for discharging the protective gas flowing into the mounting groove, the venting channel being located only within the inner region of the extrusion line connecting the first pressing portion and the second pressing portion. Here, the extrusion line can be arranged along the direction of movement as the outer door opens and closes the housing. Here, the mounting groove and the sealing unit each have a closed-loop shape, and the extrusion line can extend continuously along the extension direction of the closed loop to form an extrusion closed-loop surface. Here, the ventilation channel can be configured such that the mounting slot is connected to the protective space when the protective space is closed. This also includes an exhaust module, which is connected to the protective space and is configured to discharge the protective gas. The protective gas flowing into the mounting slot can be discharged into the protective space by the action of the exhaust module. Here, the bottom surface of the ventilation channel can be separated from the inner wall of the mounting slot when the protective space is closed. Here, the sealing unit includes a closed-loop body, and the venting channel may include a groove formed on the inner circumferential surface of the body. Here, there may be multiple grooves, which are arranged at equal intervals along the circumference of the main body. Here, the mounting groove is semi-dovetail shaped, and the ventilation channel can be arranged with an inclined inner wall facing the mounting groove. Here, the outer door is configured to move relative to the outer shell along the height direction to open and close the protective space, and the intersecting direction may be the same as the height direction. According to another aspect of the present invention, a high-voltage substrate processing apparatus may include: a first housing; a second housing having a mounting groove formed on a corresponding surface facing the first housing, and together with the first housing defining a process space for accommodating a substrate to be processed and a process gas with a pressure higher than atmospheric pressure; and a sealing unit having: a first pressing portion positioned to press against the first housing; a second pressing portion positioned to press against the bottom surface of the mounting groove; and a venting channel extending along a direction intersecting the corresponding surface to discharge the process gas flowing into the mounting groove, the venting channel being located only within the inner region of the extrusion line connecting the first pressing portion and the second pressing portion. Here, the extrusion line can be arranged along the contact direction between the second housing and the first housing. Here, the mounting groove and the sealing unit each have a closed-loop shape, and the extrusion line extends continuously along the extension direction of the closed loop to form an extrusion closed-loop surface. Here, the ventilation channel can be configured to connect the mounting slot to the process space when the process space is closed. Here, the sealing unit includes a closed-loop body, and the venting channel may include a groove formed on the inner circumferential surface of the body. [Invention Effects] According to the high-voltage substrate processing apparatus of the present invention configured as described above, a sealing unit disposed between the outer shell of the outer chamber containing the inner chamber and the outer door has a venting channel extending along an intersecting direction intersecting the corresponding surface to discharge protective gas flowing into the mounting groove. Therefore, when the outer chamber is opened, the sealing unit will not be lifted by the high-pressure protective gas remaining in the mounting groove. Even if the outer chamber is opened and closed and the protective gas pressure fluctuates, the sealing unit remains stably mounted in the mounting groove, thus achieving complete airtightness of the outer chamber. The preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings. This invention is not limited to the embodiments disclosed below, and various modifications and forms can be applied. These embodiments are provided solely to complete the disclosure of the invention and to fully inform those skilled in the art of invention of its scope. Therefore, it should be understood that the invention is not limited to the embodiments disclosed below, and includes not only replacing or adding to the structure of one embodiment with the structure of other embodiments, but also all modifications, equivalents, and substitutions included within the technical concept and scope of the invention. It should be understood that the accompanying drawings are only used to facilitate understanding of the embodiments disclosed in this specification, and are not intended to limit the technical concepts disclosed in this specification, including all variations, equivalents, and even substitutions included within the concept and scope of the invention. In the drawings, the dimensions or thicknesses of constituent elements may be excessively enlarged or reduced for ease of understanding, etc., but this does not limit the interpretation of the scope of protection of the invention. The terminology used in this specification is for illustrative purposes only and is not intended to limit the invention. Furthermore, singular expressions include plural expressions unless explicitly defined in the context. Terms such as "comprising," "consisting of," etc., in the specification are used to designate the presence of features, numbers, steps, operations, constituent elements, devices, or combinations thereof described in the specification. That is, it should be understood that terms such as "comprising," "consisting of," etc., in the specification do not preclude the existence or additional possibilities of one or more other features or numbers, steps, operations, constituent elements, devices, or combinations thereof. Terms such as "first," "second," etc., including ordinal numbers, can be used to describe various constituent elements, but the constituent element is not limited by the term. The term is only used to distinguish one constituent element from other constituent elements. When referring to a component being "connected / connected" or "connected" to another component, it should be understood that this could mean either a direct connection / connection to the other component or the presence of other components in between. Conversely, when referring to a component being "directly connected / connected" or "directly connected" to another component, it should be understood that no other components are present in between. When it is mentioned that a component is "located" "above" or "below" another component, it should be understood that it is not only directly positioned above the other component, but other components may also be present in between. Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art, and should not be construed as having an ideal or overly formal meaning unless explicitly defined in this application. Figure 1 is a conceptual diagram of a high voltage substrate processing apparatus according to an embodiment of the present invention. Referring to this figure, the high voltage substrate processing apparatus 100 may include an internal chamber 110, an external chamber 120, an air supply module 130, and an exhaust module 140. The internal chamber 110 forms a processing area for processing the substrate. The internal chamber 110 can be made of a non-metallic material, such as quartz, to reduce the possibility of contamination of the substrate under high temperature and high pressure operating conditions. The temperature of the processing chamber (processing temperature) can reach several hundred to several thousand degrees Celsius by operating a heating unit (not shown) disposed outside the internal chamber 110. The substrate can be, for example, a semiconductor wafer mounted on a holder. The substrate is not limited to this wafer; any basic structure used to form a circuit can be used. For example, the substrate can also include glass for fabricating a display. The holder can be a boat for supporting one or more substrates. The outer chamber 120 is configured to accommodate the inner chamber 10. Unlike the inner chamber 110, the outer chamber 120 is unaffected by contamination and can therefore be made of metallic material. The outer chamber 120 is hollow and has an internal space for accommodating the inner chamber 10. The gas supply module 130 is a structure that supplies gas to the internal chamber 110 and the external chamber 120. The gas supply module 130 has a gas supplier 131 connected to a semiconductor factory utility (gas supply facility). The gas supplier 131 can selectively supply, for example, hydrogen (H₂O) to the internal chamber 110. 2) Deuterium (D) 2) Fluorine (F) 2) Ammonia (NH4+) 3) Chlorine (Cl) 2) Nitrogen (N 2) As a reaction gas. Gas supplier 131 can supply nitrogen, for example, as an inert gas, as a protective gas to external chamber 120. These reaction gases and protective gases are respectively introduced into internal chamber 110 or external chamber 120 via reaction gas line 133 or protective gas line 135. The protective gas introduced into external chamber 120 is specifically supplied to the space between external chamber 120 and internal chamber 110 (protective space). The reaction gas and the protective gas can also be simply referred to as process gases. The process gas can be supplied to chambers 110 and 120 at a pressure higher than atmospheric pressure (high pressure), for example, creating a pressure of several to tens of atmospheres. When the pressure in the inner chamber 110 reaches a first pressure with the supply of the reaction gas, and the pressure in the outer chamber 120 reaches a second pressure with the supply of the protective gas, these pressures can be maintained within a set relationship (range). For example, the second pressure can be set to be practically the same as or slightly greater than the first pressure. This pressure relationship provides the advantage of preventing the reaction gas from leaking from the inner chamber 110 and preventing the inner chamber 110 from breaking. The second pressure can also be set slightly lower than the first pressure, in which case the same effect as described above can be achieved. The exhaust module 140 is a structure for venting the process gases. To vent the reaction gases from the internal chamber 110, an exhaust line 141 can be connected to the upper part of the internal chamber 110. Similarly, to vent the protective gas from the external chamber 120, an exhaust line 145 connected to the external chamber 120 can be provided. If these exhaust lines 141 and 145 are integrated, the reaction gases will be diluted by the protective gas during the venting process, resulting in a lower concentration. Figure 2 shows a partial cross-sectional view of the external chamber in Figure 1 with the chamber open. Referring to Figure 2, the outer chamber 120 includes a housing 121 and an outer door 125. The housing 121 has a hollow space, and the lower part of the hollow space may have an open shape. The outer door 125 has a shape that closes the open lower part of the housing 121. The outer door 125, together with the housing 121 and the inner chamber 110, defines the protective space. When the outer door 125 descends along the direction of movement, specifically along the height direction H, the protective space is opened (open state, see Figure 2). The direction of movement is the direction in which the outer door 125 approaches or moves away from the housing 121. As the outer door 125 rises along the height direction H, the outer door 125 is connected to the housing 121 via a sealing unit 150 described later. At this time, the protective space may be in a closed state (closed state, see Figure 4). The height direction H is illustrated as a vertical direction in the figure, but it is not necessarily limited to vertical; depending on the situation, it may be a direction slightly inclined relative to the vertical line. For reference, the internal chamber 110 may also include an inner shell (not shown) and an inner door (not shown). The inner shell and the inner door may be completely surrounded by the outer shell 121 and the outer door 125. The inner shell may be mounted on the outer shell 121. The inner door may move in conjunction with the outer door 125 to open and close the processing chamber. Therefore, not only the outer chamber 120 but also the internal chamber 110 substantially achieves the open state and the closed state (closed state). In the open state, the substrate can be loaded onto or unloaded from the holder. Looking at the outer chamber 120, a sealing unit 150 is arranged between the outer casing 121 and the outer door 125. The sealing unit 150 is used to isolate the protective gas in this protective space from the outside air. Although this protective space is ultimately a space closed by the sealing unit 150, it can be said that this protective space is defined by the outer casing 121 and the outer door 125. For mounting the sealing unit 150, the housing 121 and the outer door 125 may have corresponding surfaces 122, 126 facing each other. When one corresponding surface 122 is the lower surface of the housing 121, the other corresponding surface 126 may be the upper surface of the outer door 125. The corresponding surfaces 122, 126 may be substantially parallel to each other. The corresponding surface 122 of the housing 121 may have, for example, a closed-loop shape. Corresponding to the shape of the corresponding surface 122, the sealing unit 150 can also have a closed-loop shape. Specifically, the sealing unit 150 can be a circular O-ring. This O-ring may contain silicone or the like to provide cushioning properties and may also be airtight to prevent gas leakage from the O-ring. The O-ring can be accommodated in the mounting groove 127 formed on the corresponding surface 126 of the outer door 125. If the mounting groove is formed on the corresponding surface 122, the O-ring can be mounted on the outer casing 121. The mounting groove 127 may also have a closed-loop shape corresponding to the sealing unit 150. In this embodiment, the mounting groove 127 is shown to have a semi-dovetail cross-section. Thus, the mounting groove 127 has an inner wall surface 127b that is inclined relative to the bottom surface 127a. The inner wall surface 127b may be a wall surface near the center of the outer door 125. In alternative embodiments, the mounting groove 127 may have different shapes, such as dovetail or square. A portion of the sealing unit 150 may be accommodated in the mounting groove 127, while the remainder may protrude beyond the corresponding surface 126 along the height direction H. The lower portion of the sealing unit 150 may contact the bottom surface 127a of the mounting groove 127, and the inner peripheral surface of the sealing unit 150 may contact the inclined inner wall surface 127b. The outer peripheral surface of the sealing unit 150 may also contact the outer wall surface 127c of the mounting groove 127. A venting channel 155 may be formed on the inner peripheral surface of the sealing unit 150. The venting channel 155 may be positioned facing the inner wall surface 127b. The venting channel 155 may extend along an intersection direction that intersects with the corresponding surface 126. This intersection direction may be approximately the same as the height direction H. This intersection direction is not limited to a straight line, but may also be along a curve. Figure 3 shows a perspective view of the sealing unit in Figure 2. Referring to Figure 3, the sealing unit 150 may have a body 151 with the aforementioned ventilation channel 155 formed thereon. The body 151 is a closed-loop shape, specifically, it may be circular. The body 151 may be formed of a material with airtightness and cushioning properties, such as silicone. Ventilation channel 155 is formed on the inner circumferential surface of body 151. Specifically, ventilation channel 155 may be a groove extending approximately along the height direction H. Multiple grooves may be present. In this case, multiple grooves may be arranged at equal intervals along the circumference of body 151. The groove has a slightly semi-circular cross-section, but is not limited thereto. In alternative embodiments, the groove may have a polygonal cross-section, such as a triangular cross-section, a square cross-section, etc., or it may have a circular cross-section. If it is a circular cross-section, a ventilation channel 155 should be formed through the body 151. Figure 4 shows a partial cross-sectional view of the external chamber in the closed state as shown in Figure 2. Referring to Figures 4 and 2, as the outer door 125 rises along the height direction H, the sealing unit 150 contacts the outer casing 121. More specifically, the sealing unit 150 can be compressed along the height direction H. The upper part of the sealing unit 150 can be a first pressing part 152 pressing against the corresponding surface 122, and the lower part of the sealing unit 150 can be a second pressing part 153 pressing against the bottom surface 127a. Since the first pressing part 152, the second pressing part 153, and the central part 156 of the main body 151 are compressed, a compression line L connecting them 152, 153, and 156 can be formed. Since the compression line L is arranged to be approximately aligned with the direction of movement of the outer door 125 relative to the outer casing 121 (height direction H), the sealing unit 150 is strongly compressed, so that the airtightness of the outer chamber 120 can be firmly maintained even under high pressure. The compression line L is a concept defined based on the cross-section of the sealing unit 150, and considering the overall shape of the sealing unit 150, it can also be defined as a compression closed-loop surface. The extrusion closed-loop surface is a closed surface formed by the continuous extension of the extrusion line along the extension direction of the closed loop. Here, the closed-loop surface is a ring formed by the mounting groove 127 (and the sealing unit 150). The outer peripheral surface of the sealing unit 150 can be a third pressing portion 154 that presses against the outer wall surface 127c. The corresponding surfaces 122 and 126 are slightly spaced apart from each other, so that the protective gas can flow between the corresponding surfaces 122 and 126. When the sealing unit 150 is compressed, the outer chamber 120 is closed. The protective space is also closed as described above. In this closed state, the venting channel 155 can be located inside the compression line L connecting the first pressing part 152 and the second pressing part 153 (the space defined by the main body 151 (FIG. 3) with respect to the compression line L). The venting channel 155 can communicate between the mounting groove 127 and the protective space. In this closed state, the protective gas is supplied to the protective space at high pressure. The protective gas can flow into the mounting groove 127 through the channel (P) between the corresponding surfaces 122 and 126 (and the venting channel 155). The protective gas can mainly remain within the space defined by the bottom surface 127a, the inner wall surface 127b, and the sealing unit 150. The protective gas flowing into the mounting groove 127 cannot exceed the compression line L to flow to the outside. The third pressing part 154 can serve as an additional barrier to prevent the protective gas from flowing to the outside. After the processing is completed, the protective gas can be discharged to the outside of the protected space via the exhaust module 140 (see Figure 1). During this exhaust process, the protective gas flowing into the mounting slot 127 can be discharged to the protected space connected to the mounting slot 127 via the ventilation channel 155. For this purpose, the bottom 155a of the ventilation channel 155 is separated from the inner wall surface 127b, so that the ventilation channel 155 will not be blocked even in the closed state. When the protective gas is exhausted and the outer door 125 separates from the outer casing 121, the sealing unit 150 is not lifted out of the mounting groove 127. This is because the protective gas that flowed into the mounting groove 127 did not remain in the mounting groove 127, so there was no force to push the sealing unit 150 upward. In the above embodiment, the sealing unit 150 is applied between the outer shell 121 and the outer door 125, but the present invention is not limited thereto. In an alternative embodiment, the sealing unit can also be applied directly between the inner shell and the inner door. In this case, the inner shell can accommodate the substrate together with the inner door, and the sealing unit can seal the processing chamber accommodating the substrate from the protective space. The inner shell can be referred to as the first housing, and the inner door can be referred to as the second housing. In the above embodiments, a processing apparatus having dual chambers 110 and 120 was described as the high voltage substrate processing apparatus 100, but the present invention is not limited thereto. In an alternative embodiment, the sealing unit can also be directly applied to a substrate processing apparatus having a single chamber. This single chamber connects multiple structures to house the substrate. Process gases, such as reaction gases, used to process the substrate are supplied at high pressure to the space housing the substrate. Of the multiple structures described above, two structures connected to each other can be referred to as a first housing and a second housing, as they define the process space for performing the processing on the substrate. The sealing unit is disposed between the first housing and the second housing. The mounting groove can be formed on either the first housing or the second housing. In alternative embodiments, the sealing unit can also be directly applied to a semi-double chamber. The semi-double chamber can have two housings (an inner housing and an outer housing) and a door. The two housings are connected to each other to form a sealed space (corresponding to the protective space described above). The substrate can be arranged in the space defined by the inner housing and the door, the reactive gas can be injected, and the protective gas can be injected into the sealed space. The door is not completely protected by the protective gas and is exposed to the outside. In this respect, the door can correspond to the outer door in the double chamber. The sealing unit can be arranged between the door and the inner housing (or the outer housing). The concepts of the first housing and the second housing apply not only to a single chamber but also to the outer chamber 120 in double chambers 110 and 120. Viewed from the outer chamber 120 where the sealing unit is installed, the outer shell 121 can be considered the first housing, and the outer door 125 can be considered the second housing. The concepts of the first housing and the second housing can also be applied to the aforementioned semi-double chambers. In this case, the inner shell or outer shell can be considered the first housing, and the door can be considered the second housing. Although a batch-type processing apparatus is illustrated in this specification, the invention is not limited thereto. The invention can also be applied to a single-wafer-type processing apparatus. The above description is illustrative only and not restrictive. Any equivalent modifications or alterations made without departing from the spirit and scope of this invention should be included in the appended claims. 100: High voltage substrate processing device; 110: Internal chamber; 120: External chamber; 121: Outer shell; 122, 126: Corresponding surfaces; 125: Outer door; 127: Mounting groove; 127a: Bottom surface; 127b: Inner wall surface; 127c: Outer wall surface; 130: Gas supply module; 131: Gas supplier; 133: Reaction gas pipeline; 135: Protective gas pipeline; 140: Exhaust module; 141, 145: Exhaust pipeline; 150: Sealing unit; 151: Main body; 152: First pressing part; 153: First pressing part; 154: Third pressing part; 155: Ventilation channel; 155a: Bottom; 156: Central part; H: Height direction; L: Extrusion line; P: Channel. Figure 1 is a conceptual diagram of a high-voltage substrate processing apparatus according to an embodiment of the present invention. Figure 2 is a partial cross-sectional view showing the external chamber of Figure 1 in the open state. Figure 3 is a perspective view of the sealing unit of Figure 2. Figure 4 is a partial cross-sectional view showing the external chamber of Figure 2 in the closed state. 100: High Voltage Substrate Processing Device 120:External chamber 121: Outer shell 122, 126: Corresponding surfaces 125: Outer Gate 127: Mounting slot 127a: Bottom surface 127b: Inner wall surface 127c: Exterior wall surface 150: Sealing unit 155: Ventilation Channel H: Height direction

Claims

1. A high-voltage substrate processing apparatus, wherein, include: The inner chamber is configured to contain the substrate to be processed and the reaction gas that forms a first pressure higher than atmospheric pressure; the outer chamber includes: a housing for containing the inner chamber; an outer door that, together with the housing and the inner chamber, defines a protective space for containing a protective gas that forms a second pressure relative to the first pressure, one of the housing and the outer door having a mounting groove formed on a corresponding surface opposite to the other of the housing and the outer door; and a sealing unit including: a body including a first pressing portion that presses against the other; and a second pressing portion that presses against the bottom surface of the mounting groove; And a ventilation channel formed within the main body, extending along an intersection direction intersecting the corresponding surface, for discharging the protective gas flowing into the mounting groove, wherein the ventilation channel is located only within the inner region of the extrusion line connecting the first pressing part and the second pressing part, and is connected to the space defined by the main body, the bottom surface of the mounting groove, and the inner wall surface of the mounting groove.

2. The high-voltage substrate processing apparatus as described in claim 1, wherein, The extrusion line is arranged along the direction of movement as the outer door opens and closes the housing.

3. The high-voltage substrate processing apparatus as described in claim 1, wherein, The mounting groove and the sealing unit each have a closed-loop shape, and the extrusion line extends continuously along the extension direction of the closed loop to form an extrusion closed-loop surface.

4. The high-voltage substrate processing apparatus as claimed in claim 1, wherein, The ventilation channel is configured to connect the mounting slot to the protective space when the protective space is closed.

5. The high-voltage substrate processing apparatus as described in claim 4, wherein, It also includes an exhaust module that is connected to the protective space and configured to discharge the protective gas. The exhaust module is arranged to discharge the protective gas flowing into the mounting slot into the protective space.

6. The high-voltage substrate processing apparatus as claimed in claim 4, wherein, The bottom surface of the ventilation channel is separated from the inner wall of the mounting slot when the protective space is closed.

7. The high-voltage substrate processing apparatus as claimed in claim 1, wherein, The main body is in a closed-loop shape, and the ventilation channel includes a groove formed on the inner circumferential surface of the main body.

8. The high-voltage substrate processing apparatus as described in claim 7, wherein, The groove has multiple grooves and is arranged at equal intervals along the circumference of the main body.

9. The high-voltage substrate processing apparatus as claimed in claim 1, wherein, The mounting slot is semi-dovetail shaped, and the ventilation channel is arranged to face the inner wall of the mounting slot.

10. The high-voltage substrate processing apparatus as claimed in claim 1, wherein, The outer door is arranged to move relative to the outer shell along the height direction to open and close the protective space, the intersecting direction being the same as the height direction.

11. A high-voltage substrate processing apparatus, wherein, include: First shell; The second housing has a mounting groove formed on a corresponding surface facing the first housing, and together with the first housing, defines a process space for accommodating the substrate to be processed and process gas with a pressure higher than atmospheric pressure. And a sealing unit, comprising: a main body, the main body including a first pressing part positioned to press against the first housing; and a second pressing part positioned to press against the bottom surface of the mounting groove; And a ventilation channel formed within the main body, which extends along a direction intersecting the corresponding surface to discharge the process gas flowing into the mounting groove, wherein the ventilation channel is located only in the inner region of the extrusion line connecting the first pressing part and the second pressing part, and is connected to the space defined by the main body, the bottom surface of the mounting groove and the inner wall surface of the mounting groove.

12. The high-voltage substrate processing apparatus as claimed in claim 11, wherein, The extrusion lines are arranged along the contact direction between the second housing and the first housing.

13. The high-voltage substrate processing apparatus as claimed in claim 11, wherein, The mounting groove and the sealing unit each have a closed-loop shape, and the extrusion line extends continuously along the extension direction of the closed loop to form an extrusion closed-loop surface.

14. The high-voltage substrate processing apparatus as claimed in claim 11, wherein, The ventilation channel is configured to connect the mounting slot to the process space when the process space is closed.

15. The high-voltage substrate processing apparatus as claimed in claim 11, wherein, The main body is in a closed-loop shape, and the ventilation channel includes a groove formed on the inner circumferential surface of the main body.

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