Semiconductor memory devices, methods for manufacturing semiconductor memory devices

Abstract

One embodiment provides a semiconductor memory device and a method for manufacturing the semiconductor memory device that reduces the requirements for processing technology or processing accuracy. The semiconductor memory device of one embodiment includes: a substrate; a semiconductor memory disposed on the substrate; and an electronic component comprising a body having a central axis and leads extending from the body, the leads being connected to a connection portion of the substrate. The electronic component is configured such that the central axis of the body is within the thickness of the substrate in the thickness direction. The leads are fixed to the connection portion with their extended tips facing the connection portion in the extension direction of the leads extending from the body.

Claims

1. A semiconductor memory device, comprising: substrate; A semiconductor memory is disposed on the substrate; And an electronic component, comprising a body having a central axis and a lead extending from the body, the lead being connected to a connection portion of the substrate, the electronic component being configured such that the central axis of the body is within the thickness of the substrate in the thickness direction of the substrate, and the lead being fixed to the connection portion with the leading tip facing the connection portion in the extending direction of the lead extending from the body.

2. The semiconductor memory device as claimed in claim 1, wherein, The electronic component is a battery storage component with a cylindrical shape.

3. The semiconductor memory device as claimed in claim 1 or 2, wherein, The lead wire extends from the end face of the body along the central axis in the axial direction.

4. The semiconductor memory device as claimed in claim 3, wherein, The lead has a pair of leads extending side-by-side from the end face of the body.

5. The semiconductor memory device as claimed in claim 1 or 2, wherein, The connecting portion is an end face through hole provided in the recessed portion where the edge of the substrate is cut off.

6. The semiconductor memory device as claimed in claim 5, wherein, The end face through hole includes: an inner cover portion, covering the inner side of the recessed portion of the edge of the substrate; and a pair of flange portions, connected to the end of the inner cover portion of the substrate in the thickness direction, extending along the surface and back of the substrate respectively, and an anchoring member is provided on at least one of the pair of flange portions, the anchoring member fitting into the substrate to fix the end face through hole to the substrate.

7. A method for manufacturing a semiconductor memory device, the semiconductor memory device comprising: substrate; A semiconductor memory is disposed on the substrate; And an electronic component comprising a body having a central axis and a lead extending from the body, the lead being connected to a connection portion of a substrate, the manufacturing method comprising: a step of configuring the electronic component such that the central axis of the body is within the thickness of the substrate in the thickness direction of the substrate; a step of positioning the extended tip of the lead facing the connection portion in the extension direction of the lead extending from the body; and a step of fixing the lead to the connection portion with the extended tip facing the connection portion.

8. A semiconductor memory device, comprising: A substrate has a first surface, a second surface, and a third surface. The first surface extends along a first direction, the second surface is located on the side opposite to the first surface, and the third surface extends along a second direction orthogonal to the first direction and being the thickness direction of the substrate. The substrate has a connecting portion and extends to the first surface and the second surface. A semiconductor memory is disposed on the first surface. And electronic components, having a body and a first lead, the first lead extending from the body along a first direction and having a first extended front end, wherein, when viewed from the first direction, the center of the body in a second direction coincides with the third surface, and the first extended front end is fixed to the connecting portion facing each other.

9. The semiconductor memory device as claimed in claim 8, wherein, The electronic component is a battery storage component with a cylindrical shape.

10. The semiconductor memory device as claimed in claim 9, wherein, The electronic component further has a second lead, the second lead having a second extended front end, the second extended front end being fixed to the connecting portion facing each other.

11. The semiconductor memory device as claimed in claim 10, wherein, The body has a first end face, and the first lead and the second lead extend from the first end face.

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