Semiconductor device

Abstract

This invention discloses a semiconductor device, which mainly includes a substrate containing an active region, a contact region surrounding the active region, a plurality of first fin structures extending in the active region along a first direction, a first gate structure extending on the first fin structures along a second direction, and a second fin structure extending in the contact region along the first direction. The contact region specifically includes a first contact region and a second contact region extending along the first direction, and a third contact region and a fourth contact region extending along the second direction, wherein the second fin structure overlaps the first contact region.

Claims

1. A semiconductor device, characterized in that it comprises: a substrate including an active region; a contact region surrounding the active region, wherein the contact region includes a first contact region and a second contact region extending along a first direction, and a third contact region and a fourth contact region extending along a second direction; a plurality of first fin structures extending along the first direction within the active region; a first gate structure extending along the second direction on the first fin structures; a second fin structure extending along the first direction within the first contact region; and a plurality of fourth fin structures extending along the first direction within the third contact region.

2. The semiconductor device as described in claim 1, wherein the first contact area overlaps the third contact area at a first corner, the first contact area overlaps the fourth contact area at a second corner, the second contact area overlaps the third contact area at a third corner, and the second contact area overlaps the fourth contact area at a fourth corner.

3. The semiconductor element as described in claim 1, wherein the second fin structure overlaps the first contact region.

4. The semiconductor element as described in claim 1 further includes a third fin structure extending along the first direction within the second contact region.

5. The semiconductor element as described in claim 4, wherein the second fin structure and the third fin structure have the same length.

6. The semiconductor element as described in claim 1, wherein the length of the fourth fin structure is less than the length of the second fin structure.

7. The semiconductor element as described in claim 1, comprising: a first dummy gate extending along the second direction within the third contact region; and a second dummy gate extending along the second direction beside the first dummy gate.

8. The semiconductor element as described in claim 7, wherein the first dummy gate and the second dummy gate are disposed on both sides of the fourth fin structure.

9. The semiconductor element as described in claim 1 further includes a contact plug extending along the second direction within the third contact area.

10. The semiconductor element as described in claim 9, wherein the contact plug overlaps the second fin structure and the fourth fin structure.

11. The semiconductor element as described in claim 9 further includes a doped region disposed between the second fin structure and the contact plug.

12. The semiconductor element as described in claim 9 further includes an epitaxial layer disposed between the fourth fin structure and the contact plug.

13. The semiconductor device as described in claim 1 further comprises: a second gate structure extending along the second direction beside the first gate structure; a third dummy gate extending along the second direction within the fourth contact region; and a fourth dummy gate extending along the second direction beside the third gate structure.

14. The semiconductor device as described in claim 1, wherein the length of the second fin structure is greater than the length of the active region.

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