Apparatus and method for processing substrate

Abstract

This invention relates to a substrate processing apparatus and method. The substrate processing apparatus of this invention may include: a process chamber comprising a plurality of process regions for depositing thin films on a plurality of substrates; a substrate support structure located inside the process chamber and comprising a plurality of substrate support modules for rotating and supporting the plurality of substrates; a gas jetting structure disposed above the process chamber, facing the substrate support structure, and jetting a plurality of process gases onto the plurality of substrates entering the plurality of process regions; and a control unit that changes the rotation speed of the plurality of substrate support modules based on a substrate processing time including the thin film deposition time.

Claims

1. A substrate processing apparatus, comprising: A process chamber includes a plurality of process regions for depositing thin films on a plurality of substrates. A substrate support structure is located inside the process chamber and includes a plurality of substrate support modules for rotating and supporting the plurality of substrates; a gas jetting structure is disposed on the upper part of the process chamber so as to face the substrate support structure and jet a plurality of process gases onto the plurality of substrates entering the plurality of process areas; and a control unit changes the rotation speed of the plurality of substrate support modules based on the substrate processing time, including the thin film deposition time.

2. The substrate processing apparatus according to claim 1, wherein, The control unit controls the plurality of substrate support modules to rotate while having a first rotational speed during the A cycles of the plurality of process regions; and after the A cycles of the plurality of substrate support modules are completed, during the N additional cycles of the plurality of process regions, the control unit controls the rotational speed of the plurality of substrate support modules to a second rotational speed different from the first rotational speed.

3. The substrate processing apparatus according to claim 2, wherein, The thin film includes a first thin film structure and a second thin film structure, wherein the second thin film structure is formed on the upper part of the first thin film structure; the first thin film structure is formed on the upper part of the substrate rotating at the first rotational speed; The second thin film structure is formed on the upper part of the substrate rotating at the second rotational speed.

4. The substrate processing apparatus according to claim 3, wherein, The first thin film structure and the second thin film structure contain the same material; and the thickness of the second thin film structure is greater than the thickness of the first thin film structure.

5. The substrate processing apparatus according to claim 4, wherein, The second rotational speed is faster than the first rotational speed.

6. The substrate processing apparatus according to claim 3, wherein, The first thin film structure and the second thin film structure are made of different materials.

7. The substrate processing apparatus according to claim 3, wherein, The first thin film structure and the second thin film structure include multiple alternating layers of first material films and second material films of different types; The thickness of the second thin film structure is greater than the thickness of the first thin film structure; and the second rotation speed is faster than the first rotation speed.

8. The substrate processing apparatus according to claim 1, wherein, The substrate processing time includes at least one of the substrate pretreatment time, the thin film deposition time, and the substrate subsequent processing time; the control unit rotates the plurality of substrate support modules at a first rotational speed during the thin film deposition time; and during the subsequent processing time, controls the plurality of substrate support modules to rotate at a second rotational speed that is faster than the first rotational speed.

9. The substrate processing apparatus according to claim 8, wherein, The gas jetting structure jets purge gas onto the substrate rotating at the second rotational speed during the subsequent processing time.

10. The substrate processing apparatus according to claim 8, wherein, The control unit controls the plurality of substrate support modules to rotate at at least one of the first rotation speed and the second rotation speed during the preprocessing time.

11. The substrate processing apparatus according to any one of claims 1 to 10, wherein, The control unit controls the supply amount of rotating gas to the plurality of substrate support modules, thereby controlling the rotation speed of the plurality of substrate support modules.

12. The substrate processing apparatus according to claim 1, wherein, The substrate support structure includes: a base located facing the gas injection structure; a rotating shaft connected to the center below the base to rotate the base; a plurality of placement portions configured in a pocket shape on the base to accommodate the plurality of substrate support modules; and a rotating gas supply line located inside the rotating shaft and the base, supplying the rotating gas to the surfaces of the plurality of placement portions.

13. The substrate processing apparatus according to claim 12, wherein, The plurality of substrate support modules each include: a satellite carrier plate, which rotates the substrate by means of rotating gas supplied to the plurality of placement portions; and a distribution plate, which is disposed between the placement portion and the satellite carrier plate, and distributes the rotating gas to the satellite carrier plate.

14. The substrate processing apparatus according to claim 12, further comprising: A flow control unit, connected to the rotating gas supply line, controls the flow of the rotating gas delivered to the plurality of placement units according to the control signal from the control unit.

15. A substrate processing method comprising repeatedly cycling a plurality of substrates sequentially through a first set of process regions sprayed with at least one first source gas and a second set of process regions sprayed with at least one second reactive gas to deposit a thin film on the plurality of substrates, comprising the steps of: cycling the plurality of substrates in the first set of process regions and the second set of process regions A times (where A is a natural number) while rotating the plurality of substrates at a first rotational speed to form a first thin film structure on the plurality of substrates respectively; and rotating the plurality of substrates at a second rotational speed faster than the first rotational speed, and then cycling the plurality of substrates in the first set of process regions and the second set of process regions N times (where N is a natural number) to form a second thin film structure on the top of the first thin film structure.

16. The substrate processing method according to claim 15, wherein, The thickness of the second thin film structure is greater than the thickness of the first thin film structure.

17. The substrate processing method according to claim 15, wherein, The first thin film structure and the second thin film structure are made of the same material.

18. The substrate processing method according to claim 15, wherein, The first thin film structure and the second thin film structure are made of different materials.

19. The substrate processing method according to claim 15, wherein, The first thin film structure and the second thin film structure include multiple alternating layers of first material films and second material films of different types; The thickness of the second thin film structure is greater than the thickness of the first thin film structure; and the second rotation speed is faster than the first rotation speed.

20. A substrate processing method comprising circulating a plurality of substrate support modules mounted on a plurality of substrates multiple times in a plurality of process regions to deposit a thin film on the plurality of substrates, comprising the steps of: pre-treating the plurality of substrates; circulating the plurality of substrate support modules in the plurality of process regions while rotating at a first rotational speed to deposit the thin film on the plurality of substrates; and subsequent processing comprising spraying purge gas onto the plurality of substrates while rotating the plurality of substrate support modules at a second rotational speed faster than the first rotational speed.

Images