Surface emitting laser device and manufacturing method thereof

Abstract

A surface-emitting laser device includes a first type distributed Bragg reflector layer, a second type distributed Bragg reflector layer, and an active layer. The active layer is disposed between the first type distributed Bragg reflector layer and the second type distributed Bragg reflector layer, wherein the active layer comprises alternating stacked indium gallium arsenide layers and multiple gallium arsenide layers, and the active layer is doped with antimony. A method for manufacturing the surface-emitting laser device has also been proposed.

Claims

1. A surface-emitting laser device, comprising: A type I distributed Bragg reflector; A type II distributed Bragg reflector; An active layer is disposed between the first type distributed Bragg reflector layer and the second type distributed Bragg reflector layer, wherein the active layer comprises a plurality of alternately stacked indium gallium arsenide layers and a plurality of gallium arsenide layers, and the active layer is doped with antimony, wherein the atomic percentage of antimony doped in the active layer falls within the range of 1% to 2%.

2. The surface-emitting laser device as claimed in claim 1 further includes an oxide layer disposed on the side of the second type distributed Bragg reflector layer near the active layer, wherein the oxide layer has an opening through which light emitted from the active layer passes.

3. The area-emitting laser device as described in claim 1, further comprising: A substrate, wherein the first type of distributed Bragg reflector layer is disposed on the substrate; A first electrode is disposed on the substrate; And a second electrode, disposed on the second type distributed Bragg reflector layer.

4. The surface-emitting laser device as claimed in claim 1, wherein the first type distributed Bragg reflector and the second type distributed Bragg reflector are each composed of alternating stacks of aluminum gallium arsenide and gallium arsenide.

5. A method for manufacturing a surface-emitting laser device, comprising: Provide a substrate; A first type distributed Bragg reflector layer is formed on the substrate; a plurality of indium gallium arsenide layers and a plurality of gallium arsenide layers are alternately formed on the first type distributed Bragg reflector layer, wherein the alternately stacked indium gallium arsenide layers and gallium arsenide layers form an active layer; antimony is doped in the active layer, wherein the atomic percentage of antimony doped in the active layer is in the range of 1% to 2%; and a second type distributed Bragg reflector layer is formed on the active layer.

6. A method for manufacturing a surface-emitting laser device as claimed in claim 5, wherein the method for doping antimony in the active layer is an ion implantation method.

7. The method of manufacturing a surface-emitting laser device as claimed in claim 5 further includes forming an oxide layer on the side of the second type distributed Bragg reflector layer near the active layer, the oxide layer having an opening for allowing light emitted from the active layer to pass through.

8. The method for manufacturing the area-emitting laser device as described in claim 5 further includes: A first electrode is formed on the substrate; And a second electrode is formed on the second type of distributed Bragg reflector layer.

9. A method for manufacturing a surface-emitting laser device as claimed in claim 5, wherein the first type distributed Bragg reflector and the second type distributed Bragg reflector are each a structure of alternating stacks of aluminum gallium arsenide and gallium arsenide.

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