Fuse structure

TWI937972BActive Publication Date: 2026-09-01POWERCHIP SEMICON MFG CORP
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Patent Information

Application Number
TW114129014
Authority / Receiving Office
TW · TW
Patent Type
Patents
Current Assignee / Owner
Filing Date
2025-07-30
Publication Date
2026-09-01
Estimated Expiration
2045-07-29

Smart Images

  • Figure TWG2TB001908960_001
    Figure TWG2TB001908960_001
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    Figure TWG2TB001908960_002
  • Figure TWG2TB001908960_003
    Figure TWG2TB001908960_003
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Abstract

A fuse structure includes a fuse. The fuse includes a first conductive layer, a second conductive layer, and a third conductive layer. The first conductive layer includes a first portion, a second portion, and a third portion. The first portion is located between the second portion and the third portion. The second conductive layer and the third conductive layer are located on the first conductive layer and are separated from each other. The second conductive layer is located on the second portion. The third conductive layer is located on the third portion.
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Claims

1. A fuse structure comprising a fuse, wherein the fuse comprises: A first conductive layer includes a first portion, a second portion and a third portion, wherein the first portion is located between the second portion and the third portion; The first conductive layer and the third conductive layer are located on the first conductive layer and are separated from each other, wherein the second conductive layer is located on the second portion and the third conductive layer is located on the third portion, the sidewall of the second conductive layer has a first recess and the sidewall of the third conductive layer has a second recess.

2. The fuse structure as claimed in claim 1, wherein the second conductive layer and the third conductive layer expose the entire first portion.

3. The fuse structure as claimed in claim 1, wherein the thickness of the first conductive layer is less than the thickness of the second conductive layer and the thickness of the third conductive layer.

4. The fuse structure as claimed in claim 1, wherein the sidewalls of the second conductive layer and the sidewalls of the third conductive layer include arcuate sidewalls.

5. The fuse structure as claimed in claim 1, wherein the top view area of ​​the first portion is smaller than the top view area of ​​the second portion and the top view area of ​​the third portion.

6. The fuse structure as described in claim 1, wherein the fuse further comprises: A fourth conductive layer is located between the second conductive layer and the third conductive layer, and is connected to the second conductive layer and the third conductive layer, wherein the thickness of the fourth conductive layer is less than the thickness of the second conductive layer and the thickness of the third conductive layer.

7. The fuse structure as claimed in claim 6, wherein the fourth conductive layer is located on the first portion.

8. The fuse structure as claimed in claim 6, wherein the second conductive layer, the third conductive layer and the fourth conductive layer are integrally formed.

9. The fuse structure as claimed in claim 1, wherein the fuse further comprises: The fourth conductive layer is located on top of the second conductive layer; And a fifth conductive layer, located on the third conductive layer, wherein the fourth conductive layer and the fifth conductive layer are separate from each other.

Citation Information

Patent Citations

  • E-fuse structure of semiconductor device

    TW201528477A

  • Semiconductor device with programmable insulating layer and method for fabricating the same

    TW202505977A