Semiconductor components

Abstract

This invention provides a semiconductor component comprising a substrate, a protective structure, and a conductive structure. The substrate includes an active region having an edge. The active region includes control circuitry. The protective structure is disposed on the substrate and surrounds at least a portion of the active region. The conductive structure is disposed on the substrate and at least partially between the edge of the active region and the protective structure. A first end and a second end of the conductive structure are both electrically connected to the control circuitry. The control circuitry transmits a detection signal to the first end of the conductive structure and receives a feedback signal from the second end of the conductive structure, wherein the control circuitry does not actively transmit signals to the protective structure.

Claims

1. A semiconductor component comprising: a substrate including an active region having an edge, wherein the active region includes a first control circuit, the edge of the active region being a die edge composed of a plurality of electronic components or a plurality of redundant components; a protective structure disposed on the substrate and surrounding at least a portion of the active region; and a first conductive structure disposed on the substrate and at least partially between the edge of the active region and the protective structure, wherein a first end and a second end of the first conductive structure are electrically connected to the first control circuit, wherein the first control circuit is configured to transmit a first detection signal to the first end of the first conductive structure and receive a first feedback signal from the second end of the first conductive structure, wherein the first control circuit does not actively transmit signals to the protective structure.

2. The semiconductor component as claimed in claim 1, wherein the first control circuit is configured to determine whether the first feedback signal matches the first detection signal, and if the first feedback signal does not match the first detection signal, the first control circuit determines that a grain crack has occurred at the location of the first conductive structure.

3. The semiconductor component as claimed in claim 1, wherein the first conductive structure includes an inner ring and an outer ring, the inner ring being electrically connected to the outer ring, the inner ring surrounding the active region, and the outer ring surrounding the inner ring.

4. The semiconductor component of claim 1, wherein the first conductive structure includes at least one buffer and a plurality of wires, the input of the at least one buffer being electrically connected to one of the wires, and the output of the at least one buffer being electrically connected to another of the wires.

5. The semiconductor component of claim 1, wherein the first conductive structure includes a plurality of wires and a plurality of vias, wherein the wires are disposed in a plurality of layers, and each of the vias is disposed between two of the layers to electrically connect corresponding pairs of the wires.

6. The semiconductor component of claim 5, wherein one of the vias is disposed between a first layer and a second layer of the layers, the first layer and the second layer being separated by at least one layer.

7. The semiconductor component of claim 1, wherein the first conductive structure comprises a metal, a polysilicon, or a diffusion layer.

8. The semiconductor component of claim 1, wherein the active region further includes a second control circuit, and the semiconductor component further includes: a second conductive structure disposed at least partially between the edge of the active region and the protective structure, wherein a first end and a second end of the second conductive structure are electrically connected to the second control circuit, wherein the second control circuit is configured to transmit a second detection signal to the first end of the second conductive structure and receive a second feedback signal from the second end of the second conductive structure.

9. The semiconductor component of claim 8, wherein the second control circuit is configured to determine whether the second feedback signal matches the second detection signal, and if the second feedback signal does not match the second detection signal, the second control circuit determines that a grain crack has occurred at the location of the second conductive structure.

10. The semiconductor component of claim 9, wherein the first conductive structure forms an inner ring, the second conductive structure forms an outer ring, the inner ring is not electrically connected to the outer ring, the inner ring surrounds at least a portion of the active region, and the outer ring surrounds at least a portion of the inner ring.

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