Film, laminate, semiconductor wafer with film layer, substrate for mounting semiconductor with film layer, and semiconductor device

Abstract

The present invention provides a film comprising: a propylene-based resin (A) having a constituent unit represented by the following formula (1) at the end of the molecule, a free radical polymerizable compound (B) being a free radical polymerizable compound other than the propylene-based resin (A), and a curing accelerator (C); the free radical polymerizable compound (B) comprises at least one selected from the group consisting of maleimino and citralimino groups. In equation (1), -* represents an atomic bond.

Description

[Technical Field] This invention relates to thin films, stacks using the thin films, semiconductor wafers with the thin film layers attached, semiconductor substrates with the thin film layers attached, and semiconductor devices. Specifically, this invention relates to thin films that are effective as pre-coated underfill materials. [Previous Technology] In recent years, with the miniaturization and high performance of semiconductor devices, flip-chip mounting, a method for mounting semiconductor wafers (hereinafter referred to as "wafers") onto semiconductor substrates (hereinafter referred to as "substrates"), has attracted attention. In flip-chip mounting, the conventional method involves filling the gap between the wafer and substrate with underfill material after bonding the wafer and substrate, and then allowing it to harden. However, with the miniaturization and high performance of semiconductor devices, the narrowing of the electrode pitch and the narrowing of the gap between electrodes on the wafer are also progressing. The prolonged underfilling time has led to deterioration in workability and filling defects such as incomplete filling, which have become problems. In response, some researchers have explored methods that involve supplying pre-coated underfill material to the wafer or substrate and simultaneously performing wafer-to-substrate bonding and underfilling. The underfill material is a component that comes into direct contact with the wafer and substrate. Therefore, the important characteristics required of the underfill material can be listed as follows: suppressing unfilled portions of the underfill material between the wafer and substrate and the underfill material in the environment of manufacturing and using semiconductor devices (hereinafter sometimes referred to as "low porosity"), and good adhesion between the wafer and substrate and the underfill material (hereinafter sometimes simply referred to as "wafer adhesion"). Patent Document 1 describes a pre-coated underfill material made by using a free radical polymerizable monomer in a main resin. Patent Document 1 also describes the incorporation of a silane coupling agent to improve adhesion to the wafer. Patent document 2 describes a bottom filler material containing epoxy resin, imidazole compound, and maleimide compound. Patent document 3 describes a pre-coated underfill material using an epoxy compound and a flux component containing carboxyl groups, and mentions adhesion. Patent document 4 describes a resin composition with maleimide compound, epoxy resin, and epoxy resin curing agent as essential components, and states that high adhesion can be obtained in the thermo-cured resin composition. Patent document 5 describes a thermosetting resin composition for use in forming an insulating layer in a printed wiring board, which is a resin composition for a printed wiring board containing a maleic animide compound, a benzo[a]pyrene compound, and an inorganic filler (C) having a specific structure. Patent document 6 describes an adhesive for electronic components containing aliphatic epoxy compounds and benzo[a]pyro[b] compounds as curing agents and phenolic curing agents. Patent document 7 describes an adhesive composition containing a thermosetting compound, a polymer containing a functional group that can react with the aforementioned thermosetting compound, and a thermosetting agent, having a melt viscosity of 10 Pa·s to 15000 Pa·s at the bonding temperature, a gel time of 10 seconds or more at the bonding temperature, and a gel time of 1 to 10 seconds at 240°C. Patent document 8 describes a method for manufacturing a semiconductor device using a sheet-like thermosetting resin composition. Furthermore, when bonding a wafer to a substrate using an easily oxidizable metal such as solder or copper, in order to remove the metal oxide film, which would hinder bonding, from the bonding area and obtain a good metal bond, flux components such as carboxylic acids are sometimes added to the pre-coated underfill material. [Prior Art Documents] [Patent Documents] [Patent Document 1] Japanese Patent Application Publication No. 2015-503220 [Patent Document 2] Japanese Patent Application Publication No. 2014-521754 [Patent Document 3] Japanese Patent Application Publication No. 2013-112730 [Patent Document 4] Japanese Patent Application Publication No. 2003-221443 [Patent Document 5] Japanese Patent Application Publication No. 2016-196548 [Patent Document 6] Japanese Patent Application Publication No. 2013-008800 [Patent Document 7] Japanese Patent Application Publication No. 2011-157529 [Patent Document 8] Japanese Patent Application Publication No. 2006-245242 [Summary of the Invention] [The problem that the invention aims to solve] However, free radical polymerizable monomers generally harden quickly, and the mobility of the bonding sites of the incorporated silane coupling agent is limited by the silanol groups on the wafer surface and the main resin, which has already polymerized before forming a sufficient number of bonds. As a result, the pre-coated underfill material described in Patent Document 1 cannot achieve sufficient low porosity and good wafer adhesion between the substrate such as the wafer and printed circuit board and the underfill material. Furthermore, because free radical polymerizable monomers harden quickly, the resin composition hardens before filling the unevenness present on the wafer surface. Therefore, the pre-coated underfill material described in Patent Document 1 also has the problem of not being able to achieve an effective anchoring effect in terms of improving adhesion. The material described in Patent Document 2 only works on polyimide passivation films, which results in a narrow range of applications. In the technology described in Patent Document 3, even at room temperature, the carboxyl-containing compound and the epoxy compound will still undergo a slight reaction, and the flux activity will decrease over time during storage. Therefore, the pre-coated underfill material described in Patent Document 3 has problems with low bonding stability and lack of mass production capability. In the technology described in Patent Document 4, the maleimide resin has a high water absorption rate, which leads to a significant reduction in wafer adhesion after moisture absorption treatment. If the adhesion is insufficient, water will penetrate from the peeling interface, greatly reducing insulation reliability. Furthermore, it is not easy to achieve both low porosity and wafer adhesion using only maleimide resin. Patent Document 5 does not describe the activity of the flux, nor does it describe the composition of the flux. Therefore, the resin composition described in Patent Document 5 may result in poor metal bonding. In Patent Document 6, the epoxy compound has high adhesion, but the epoxy compound can also react with the flux components, and there is a problem that the flux activity is not sufficient to achieve good metal bonding. The adhesive composition of Patent Document 7 contains a thermosetting agent with fluxing properties, but in the examples, epoxy compounds and epoxy-containing polymers are used, and since the two react at a lower temperature than the bonding temperature, it is not easy to obtain sufficient fluxing activity. Patent document 8 also describes epoxy resin as suitable as a thermosetting resin contained in thermosetting resin composition. However, as mentioned above, epoxy compounds can also react with flux components, and there is a problem that the flux activity is not sufficient to achieve good metal bonding. This invention addresses these problems and provides thin films, laminates, semiconductor wafers with attached thin film layers, semiconductor substrates with attached thin film layers, and semiconductor devices that exhibit excellent curability, low porosity, and wafer adhesion. [Means for Solving the Problem] After in-depth investigation to solve the aforementioned problems, the inventors discovered that a film containing a specific propylene-based resin (A), a specific free radical polymerizable resin or compound (B), and a curing accelerator (C) can solve the aforementioned problems, thus completing the present invention. That is, the present invention includes the following contents. [1] A film comprising: a propylene-based resin (A) having a constituent unit represented by the following formula (1) at the end of the molecule; a free radical polymerizable resin or compound (B) other than the aforementioned propylene-based resin (A); and a curing accelerator (C); wherein the aforementioned free radical polymerizable resin or compound (B) comprises at least one selected from the group consisting of maleimino and citralimino. [Chemistry 1][Picture] In formula (1), -* represents an atomic bond. [2] The film described in [1] wherein the mass average molecular weight of the aforementioned propylene-containing resin (A) is 300 to 10,000. [3] The film described in [1] or [2] wherein the aforementioned propylene-containing resin (A) comprises the resin represented by formula (2). [Chemistry 2][Picture] In formula (2), W independently represents a hydrocarbon group with 6 to 15 carbon atoms, which may also have substituents. U independently represents a hydrogen atom or an alkenyl group with 2 to 6 carbon atoms. n1 represents the number of repetitions, and its average value is a real number of 1 to 20. [4] The film described in any of [1] to [3], wherein the aforementioned acrylic resin (A) includes the resin represented by the following formula (3). [Transformation 3][Picture] In equation (3), Y independently represents a hydrocarbon group with 1 to 6 carbon atoms. X independently represents a hydrogen atom or an alkenyl group with 2 to 6 carbon atoms. n2 represents the number of repetitions, and its average value is a real number from 1 to 20. [5] The film described in any one of [1] to [4], wherein the aforementioned free radical polymerizable resin or compound (B) comprises at least one selected from the group consisting of 2,2-bis[4-(4-maleiminophenoxy)phenyl]propane, maleimide compound represented by formula (4), maleimide compound represented by formula (5), maleimide compound represented by formula (6), maleimide compound represented by formula (7), maleimide compound represented by formula (8), and maleimide compound represented by formula (9). [Chemistry 4][Picture] In equation (4), R1 independently represents a hydrogen atom or a methyl group, and n3 represents an integer from 1 to 10. [Transformation 5][Picture] In equation (5), n4 represents an integer from 1 to 30. [Chemistry 6][Picture] In formula (6), R2 independently represents a hydrogen atom, a methyl group, or an ethyl group, and R3 independently represents a hydrogen atom or a methyl group. [Chemistry 7][Picture] In formula (7), R4 independently represents a hydrogen atom, an alkyl group with 1 to 5 carbon atoms, or a phenyl group, l independently represents an integer from 1 to 3, and n5 represents an integer from 1 to 10. [Chemistry 8][Picture] In formula (8), R5 and R7 each independently represent a hydrocarbon group consisting of 8 or more atoms linked in a straight chain, R6 each independently represents a cyclic hydrocarbon group consisting of 4 to 10 atoms with or without substitution, and may also contain heteroatoms, and n6 represents an integer from 1 to 10. [Chemistry 9][Picture] In formula (9), R8 independently represents an alkyl group, R9 independently represents an alkyl group, a group represented by formula (10), a group represented by formula "-SO2-", a group represented by formula "-CO-", a group represented by formula (11), an oxygen atom, or a single bond, and n7 represents an integer from 1 to 10. [Chemistry 10][Picture] In formula (10), Z is an alkyl group or a hydrocarbon group containing an aromatic ring with 6 to 30 carbon atoms, and n8 represents an integer from 0 to 5. [Chemistry 11][Picture] [6] The film described in any one of [1] to [5], wherein the ratio (propylene group: polymerizable functional group) of the propylene-containing resin (A) to the polymerizable functional group of the free radical polymerizable resin or compound (B) is 1:1 to 1:7. [7] The film described in any one of [1] to [6], wherein the curing accelerator (C) comprises at least one selected from the group consisting of a thermal free radical polymerization initiator (D) and an imidazole compound (E). [8] The film described in [7], wherein the 10-hour half-life temperature of the thermal free radical polymerization initiator (D) is 100°C or higher. [9] The film described in [7] or [8], wherein the thermal free radical polymerization initiator (D) comprises an organic peroxide.

[10] The film described in any one of [7] to [9], wherein the aforementioned thermal free radical polymerization initiator (D) has a peroxide ester, peroxide ketal, dialkyl peroxide, or hydroperoxide skeleton.

[11] The film described in any one of [7] to

[10] , wherein the aforementioned thermal free radical polymerization initiator (D) comprises at least one selected from the group consisting of dicumyl peroxide, di(2-tert-butylperoxyisopropyl)benzene, 1,1,3,3-tetramethylbutyl hydroperoxide, 2,5-dimethyl-2,5-bis(tert-butylperoxy)-3-hexyne, and tert-butyl hydroperoxide.

[12] The film described in any one of [1] to

[11] , wherein the content of the aforementioned curing accelerator (C) is 0.05 to 10 parts by mass relative to 100 parts by mass of the total of the aforementioned propylene-based resin (A) and the aforementioned free radical polymerizable resin or compound (B).

[13] The film described in any one of [1] to

[12] further contains a thermosetting compound (F) other than the aforementioned propylene-based resin (A) and the aforementioned free radical polymerizable resin or compound (B).

[14] The film described in

[13] , wherein the aforementioned thermosetting compound (F) has a molecular weight of 400 or more.

[15] The film described in

[13] or

[14] , wherein the aforementioned thermosetting compound (F) comprises a benzo[a]pyrene compound.

[16] The film as described in

[15] , wherein the aforementioned benzo[a] compound comprises at least one selected from the group consisting of a compound represented by formula (12), a compound represented by formula (13), a compound represented by formula (14), and a compound represented by formula (15). [Chemistry 12][Picture] In formula (12), R10 independently represents aryl, aralkyl, alkenyl, alkyl, or cycloalkyl, R11 represents hydrogen atom, aryl, aralkyl, alkenyl, alkyl, cycloalkyl, or 1- to 4-valent organic groups represented by the following general formulas (a) to (t), and n9 represents an integer from 1 to 4. [Chemistry 13][Picture] In formula (13), R12 independently represents a hydrogen atom, aryl, aralkyl, alkenyl, alkyl, or cycloalkyl, R13 represents an aryl, aralkyl, alkenyl, alkyl, cycloalkyl, or a 1- to 4-valent organic group represented by the following general formulas (a) to (t), and n10 represents an integer from 1 to 4. [Chemistry 14][Picture] In formula (14), R14 represents an alkyl, cycloalkyl, or phenyl group that may also have substituents. [Chemistry 15][Picture] In formula (15), R15 represents an alkyl, cycloalkyl, or phenyl group that may also have substituents. [Chemistry 16][Picture] [Chemistry 17][Picture] [Chemistry 18][Picture] [Chemistry 19][Picture] [Chemistry 20][Picture] [Chemistry 21][Picture] [Chemistry 22][Picture] In formulas (a) to (t), Ra represents aryl, aralkyl, alkenyl, alkyl, or cycloalkyl, and Rb represents hydrogen atom, aryl, aralkyl, alkenyl, alkyl, or cycloalkyl.

[17] The film as described in

[14] or

[15] , wherein the aforementioned benzo[a] compound comprises at least one selected from the group consisting of compounds represented by formula (23) and compounds represented by formula (24). [Chemistry 23][Picture] In formula (23), R16 each independently represents a hydrogen atom, aryl, aralkyl, alkenyl, alkyl, or cycloalkyl, o each independently represents an integer from 1 to 4, R17 each independently represents a hydrogen atom, aryl, aralkyl, alkenyl, alkyl, or cycloalkyl, p each independently represents an integer from 1 to 4, T1 represents an alkyl group, a group represented by formula (10), a group represented by formula "-SO2-", a group represented by "-CO-", an oxygen atom, or a single bond. [Chemistry 24][Picture] In formula (24), R18 each independently represents a hydrogen atom, aryl, aralkyl, alkenyl, alkyl, or cycloalkyl, q each independently represents an integer from 1 to 3, R19 each independently represents a hydrogen atom, aryl, aralkyl, alkenyl, alkyl, or cycloalkyl, r each independently represents an integer from 1 to 5, T2 represents an alkyl group, a group represented by formula (10), a group represented by the formula "-SO2-", a group represented by "-CO-", an oxygen atom, or a single bond. [Chemistry 25][Picture] In formula (10), Z is an alkyl group or a hydrocarbon group containing an aromatic ring with 6 to 30 carbon atoms, and n8 represents an integer from 0 to 5.

[18] The film described in any one of

[13] to

[17] , wherein the content of the aforementioned thermosetting compound (F) is 1 to 100 parts by mass relative to the total of 100 parts by mass of the aforementioned propylene-based resin (A) and the aforementioned free radical polymerizable resin or compound (B).

[19] The film described in any one of [1] to

[18] further contains an inorganic filler (G).

[20] The film described in

[19] , wherein the average particle size of the aforementioned inorganic filler (G) is 3 μm or less.

[21] The film described in

[19] or

[20] , wherein the aforementioned inorganic filler (G) comprises at least one selected from the group consisting of silicon dioxide, aluminum hydroxide, alumina, boehmite, boron nitride, aluminum nitride, magnesium oxide, and magnesium hydroxide.

[22] The film described in any one of

[19] to

[21] , wherein the aforementioned inorganic filler (G) is silicon dioxide.

[23] The film described in any one of

[19] to

[22] , wherein the content of the aforementioned inorganic filler (G) is 500 parts by mass or less relative to the total of 100 parts by mass of the aforementioned acrylic resin (A) and the aforementioned free radical polymerizable resin or compound (B).

[24] The film described in any one of [1] to

[23] further contains an organic compound (H) having a fluxing function.

[25] The film described in

[24] , wherein the content of the organic compound (H) having a fluxing function is 5 parts by mass to 80 parts by mass relative to the total of 100 parts by mass of the aforementioned acrylic resin (A) and the aforementioned free radical polymerizable resin or compound (B).

[26] The film described in any of [1] to

[25] has a thickness of 10 μm to 100 μm.

[27] The thin film described in any one of [1] to

[26] is used as a pre-coated underfill material.

[28] A stack comprising: a support substrate and a layer containing the thin film described in any one of [1] to

[27] stacked on the support substrate.

[29] A semiconductor wafer with a thin film layer attached comprises: a semiconductor wafer and a stack as described in

[28] stacked on the semiconductor wafer; and the aforementioned thin film layer is stacked on the semiconductor wafer.

[30] A semiconductor mounting substrate with a thin film layer attached comprises: a semiconductor mounting substrate and a stack as described in

[28] stacked on the semiconductor mounting substrate; and the aforementioned thin film layer is stacked on the semiconductor mounting substrate.

[31] A semiconductor device comprising a semiconductor wafer with a thin film layer attached as described in

[29] and / or a semiconductor mounting substrate with a thin film layer attached as described in

[30] . [Effects of the Invention] According to the present invention, thin films, laminates, semiconductor wafers with thin film layers, semiconductor substrates with thin film layers, and semiconductor devices with excellent hardening properties, low porosity, and wafer adhesion can be obtained.

Implementation Method

Claims

1. A pre-coated underfill film comprising: an propylene-based resin (A), a free radical polymerizable compound (B) other than the propylene-based resin (A), a curing accelerator (C), and a thermosetting compound (F) other than the propylene-based resin (A) and the free radical polymerizable compound (B); the propylene-based resin (A) comprises a resin represented by formula (2) or a resin represented by formula (3); the free radical polymerizable compound (B) comprises at least one selected from the group consisting of maleimino and citrileimino groups; the curing accelerator (C) comprises at least one selected from the group consisting of thermal free radical polymerization initiators (D) and imidazole compounds (E); and the thermosetting compound (F) comprises a benzo[a] compound. The ratio of propylene groups in the propylene-containing resin (A) to polymerizable functional groups in the free radical polymerizable compound (B), calculated per eq. / 100g-resin, is 1:1 to 1:7 (propylene groups: polymerizable functional groups). The content of the curing accelerator (C) is 0.05 to 10 parts by mass relative to 100 parts by mass of the total of the propylene-containing resin (A) and the free radical polymerizable compound (B). The content of the thermosetting compound (F) is 1 to 100 parts by mass relative to 100 parts by mass of the total of the propylene-containing resin (A) and the free radical polymerizable compound (B). In formula (2), W independently represents a hydrocarbon group with 6 to 15 carbon atoms containing an aromatic ring; U independently represents a hydrogen atom or an alkenyl group with 2 to 6 carbon atoms; n1 represents the number of repetitions, and its average value is a real number of 1 to 20; In formula (3), Y independently represents a hydrocarbon group with 1 to 6 carbon atoms; X independently represents a hydrogen atom or an alkenyl group with 2 to 6 carbon atoms; n2 represents the number of repetitions, and its average value is a real number of 1 to 20.

2. The pre-coated underfill film as described in claim 1, wherein, The mass-average molecular weight of the propylene-based resin (A) is 300 to 10,000.

3. A pre-coated underfill film as described in claim 1, wherein, The free radical polymerizable compound (B) comprises at least one compound selected from the group consisting of 2,2-bis[4-(4-maleiminophenoxy)phenyl]propane, maleimide compounds represented by formula (4), maleimide compounds represented by formula (5), maleimide compounds represented by formula (6), maleimide compounds represented by formula (7), maleimide compounds represented by formula (8), and maleimide compounds represented by formula (9); in formula (4), R1 each independently represents a hydrogen atom or a methyl group, and n3 represents an integer from 1 to 10; in formula (5), n4 represents an integer from 1 to 30; in formula (6), R2 each independently represents a hydrogen atom, a methyl group, or an ethyl group, and R3 each independently represents a hydrogen atom or a methyl group; In formula (7), R4 independently represents a hydrogen atom, an alkyl group with 1 to 5 carbon atoms, or a phenyl group, l independently represents an integer from 1 to 3, and n5 represents an integer from 1 to 10; In formula (8), R5 and R7 independently represent a hydrocarbon group consisting of 8 or more atoms linked in a straight chain, R6 independently represents a cyclic hydrocarbon group consisting of 4 to 10 atoms of substituted or unsubstituted rings, which may also contain heteroatoms, and n6 represents an integer from 1 to 10; In formula (9), R8 independently represents an alkyl group, R9 independently represents an alkyl group, a group represented by formula (10), a group represented by "-SO2-", a group represented by "-CO-", a group represented by formula (11), an oxygen atom, or a single bond, and n7 represents an integer from 1 to 10; In formula (10), Z is an alkyl group or a hydrocarbon group containing an aromatic ring with 6 to 30 carbon atoms, and n8 represents an integer from 1 to 5; 4. A pre-coated underfill film as described in claim 1, wherein, The 10-hour half-life temperature of this thermal free radical polymerization initiator (D) is above 100°C.

5. A pre-coated underfill film as described in claim 1, wherein, The thermal free radical polymerization initiator (D) contains an organic peroxide.

6. A pre-coated underfill film as described in claim 1, wherein, The thermal free radical polymerization initiator (D) has a peroxide ester, peroxide ketal, dialkyl peroxide, or hydroperoxide backbone.

7. A pre-coated underfill film as described in claim 1, wherein, The thermal free radical polymerization initiator (D) comprises at least one selected from the group consisting of dicumyl peroxide, di(2-tert-butylperoxyisopropyl)benzene, 1,1,3,3-tetramethylbutylperoxide, 2,5-dimethyl-2,5-bis(tert-butylperoxy)-3-hexyne, and tert-butylperoxide.

8. A pre-coated underfill film as described in claim 1, wherein, The thermosetting compound (F) has a molecular weight of over 400.

9. A pre-coated underfill film as claimed in claim 1, wherein, The benzo compound comprises at least one selected from the group consisting of compounds represented by formula (12), formula (13), formula (14), and formula (15); in formula (12), R10 each independently represents aryl, aralkyl, alkenyl, alkyl, or cycloalkyl, R11 represents a hydrogen atom, aryl, aralkyl, alkenyl, alkyl, cycloalkyl, or a 1- to 4-valent organogroup represented by the following general formulas (a) to (t), and n9 represents an integer from 1 to 4; in formula (13), R12 each independently represents a hydrogen atom, aryl, aralkyl, alkenyl, alkyl, or cycloalkyl, R13 represents aryl, aralkyl, alkenyl, alkyl, cycloalkyl, or a 1- to 4-valent organogroup represented by the following general formulas (a) to (t), and n10 represents an integer from 1 to 4; In formula (14), R14 represents an alkyl, cycloalkyl, or a phenyl group that may also have a substituent; In formula (15), R15 represents an alkyl, cycloalkyl, or a phenyl group that may also have a substituent; In formulas (a) to (t), Ra represents an aryl, aralkyl, alkenyl, alkyl, or cycloalkyl, and Rb represents a hydrogen atom, aryl, aralkyl, alkenyl, alkyl, or cycloalkyl.

10. A pre-coated underfill film as claimed in claim 1, wherein, The benzo compound comprises at least one selected from the group consisting of compounds represented by formula (23) and compounds represented by formula (24); in formula (23), R16 each independently represents a hydrogen atom, aryl, aralkyl, alkenyl, alkyl, or cycloalkyl, o each independently represents an integer from 1 to 4, R17 each independently represents a hydrogen atom, aryl, aralkyl, alkenyl, alkyl, or cycloalkyl, p each independently represents an integer from 1 to 4, T1 represents an alkyl group, a group represented by formula (10), a group represented by formula "-SO2-", a group represented by "-CO-", an oxygen atom, or a single bond; In formula (24), R18 each independently represents a hydrogen atom, aryl, aralkyl, alkenyl, alkyl, or cycloalkyl, q each independently represents an integer from 1 to 3, R19 each independently represents a hydrogen atom, aryl, aralkyl, alkenyl, alkyl, or cycloalkyl, r each independently represents an integer from 1 to 5, T2 represents an alkyl group, a group represented by formula (10), a group represented by the formula "-SO2-", a group represented by "-CO-", an oxygen atom, or a single bond; In formula (10), Z is an alkyl group or a hydrocarbon group containing an aromatic ring with 6 to 30 carbon atoms, and n8 represents an integer from 1 to 5.

11. The pre-coated underfill film of claim 1 further contains inorganic filler (G).

12. A pre-coated underfill film as claimed in claim 11, wherein, The inorganic filler (G) has an average particle size of less than 3 μm.

13. A pre-coated underfill film as claimed in claim 11, wherein, The inorganic filler (G) comprises at least one selected from the group consisting of silicon dioxide, aluminum hydroxide, alumina, boehmite, boron nitride, aluminum nitride, magnesium oxide, and magnesium hydroxide.

14. A pre-coated underfill film as claimed in claim 11, wherein, The inorganic filler (G) is silicon dioxide.

15. A pre-coated underfill film as claimed in claim 11, wherein, The content of the inorganic filler (G) is less than 500 parts by mass relative to the total of 100 parts by mass of the acrylic resin (A) and the free radical polymerizable compound (B).

16. The pre-coated underfill film of claim 1 further contains an organic compound (H) that functions as a flux.

17. A pre-coated underfill film as claimed in claim 16, wherein, The content of the organic compound (H) with fluxing function is 5 to 80 parts by mass relative to the total of 100 parts by mass of the propylene-containing resin (A) and the free radical polymerizable compound (B).

18. A pre-coated underfill film, as requested in item 1, with a thickness of 10 μm to 100 μm.

19. A laminate comprising: a support substrate, and a layer laminated on the support substrate containing a film of a pre-coated underfill material as claimed in any one of claims 1 to 18.

20. A semiconductor wafer with a thin film layer, comprising: a semiconductor wafer, and a stacked body as claimed in claim 19 stacked on the semiconductor wafer; wherein the thin film layer is stacked on the semiconductor wafer.

21. A semiconductor mounting substrate with a thin film layer, comprising: a semiconductor mounting substrate, and a stacked body as claimed in claim 19 stacked on the semiconductor mounting substrate; wherein the thin film layer is stacked on the semiconductor mounting substrate.

22. A semiconductor device comprising a semiconductor wafer with an attached thin film layer as claimed in claim 20 and / or a semiconductor mounting substrate with an attached thin film layer as claimed in claim 21.