Showerhead for processing a substrate in a processing chamber and substrate processing system comprising the same

Abstract

The spray head includes a first component, a second component, and a third component. The first component includes a disc-shaped portion and a cylindrical portion extending perpendicularly from the disc-shaped portion. The disc-shaped portion includes a first set of holes and a second set of holes, each having a first diameter and a second diameter, respectively, wherein the first set of holes and the second set of holes extend from the center of the disc-shaped portion to the inner diameter of the cylindrical portion. The second component is disc-shaped and attached to the disc-shaped portion of the first component, defining an air chamber in fluid communication with the second set of holes. The second component includes a pair of arcuate grooves along the periphery of the top surface and located at opposite ends of the top surface, and a plurality of grooves extending between the pair of arcuate grooves. The third component is disc-shaped and attached to the second component, and includes a gas inlet connected to the air chamber, and a fluid inlet and a fluid outlet connected to the arcuate grooves.

Description

Technical Field

[0001] This disclosure pertains to the entire substrate processing system, and more specifically to the remote plasma architecture for true free radical processing. [Cross-reference to related applications]

[0002] This application claims priority to U.S. Provisional Application No. 63 / 084,541, filed September 28, 2020. The entire disclosure of that application is incorporated herein by reference. Prior Technology

[0003] The prior art description provided herein is for the purpose of generally presenting the background of this disclosure. The work of the inventors listed in this case, the scope of the prior art paragraphs herein, and the embodiments that may not have been qualified as prior art at the time of application are not intended or implied as prior art against the content of this disclosure.

[0004] Substrate processing systems typically include a processing chamber surrounding a substrate on which a substrate (e.g., a semiconductor wafer) is disposed during processing. A gas delivery system introduces a mixture of processing gases, including one or more precursors, into the processing chamber to deposit a film on the substrate or etch the substrate. Plasma can be ignited within the processing chamber. Alternatively, plasma can be generated at the distal end (i.e., the outside) of the processing chamber and then introduced into the processing chamber. Plasma generated outside the processing chamber is referred to as distal plasma, and it can be generated using any method, including capacitively coupled plasma (CCP), inductively coupled plasma (ICP), transformer-coupled plasma (TCP), and microwaves.

[0005] Some substrate processing systems use atomic layer deposition (ALD) to deposit materials on a substrate. ALD is a thin-film deposition method that sequentially performs gas chemical processes to deposit thin films on a substrate surface. ALD uses at least two chemicals called (reactants), wherein the precursors react with the substrate surface one at a time in a sequential, self-limiting manner. A thin film is gradually deposited on the substrate surface by repeatedly exposing it to different precursors. Summary of the Invention

[0006] A spray head used to process a substrate in a processing chamber includes a first component, a second component, and a third component. The first component includes a disc-shaped portion and a cylindrical portion extending perpendicularly from the disc-shaped portion. The diameter of the disc-shaped portion is larger than the outer diameter of the cylindrical portion. The inner diameter of the cylindrical portion is larger than the diameter of the substrate. The disc-shaped portion includes a first set of holes and a second set of holes, each having a first diameter and a second diameter, respectively. The first set of holes and the second set of holes extend from the center of the disc-shaped portion to the inner diameter of the cylindrical portion. The second component is disc-shaped and includes a first through-hole aligned with the first set of holes in the first component. The second component has a top surface, a side surface, and a bottom surface on one side relative to the cylindrical portion, which is attached to the disc-shaped portion of the first component and defines an air chamber. The air chamber is in fluid communication with the second set of holes in the first component and is separated from the first set of holes in the first component. The top surface of the second member includes a pair of arcuate grooves along the periphery of the top surface and located at opposite ends of the top surface, and a plurality of grooves extending between the pair of arcuate grooves. The third member is disc-shaped and includes a plurality of second through holes aligned with the first through holes in the second member and the first set of holes in the first member. The third member has a bottom surface attached to the top surface of the second member.

[0007] In another feature, the first set of holes and the second set of holes are arranged in a hexagonal pattern.

[0008] In another feature, the first set of holes and the second set of holes are arranged in a triangular pattern.

[0009] In another feature, the first set of holes and the second set of holes are configured as a combination of hexagonal and triangular patterns.

[0010] Among other features, the hexagons in the hexagonal pattern are equilateral hexagons, and the triangles in the triangular pattern are equilateral triangles.

[0011] Among other features, the first set of holes is arranged in a hexagonal pattern, the second set of holes is located at the vertices of a plurality of triangles within the hexagon formed by the first set of holes, and one of the holes in the first set is located within each of the triangles.

[0012] Among other features, the second set of holes is configured in a hexagonal pattern, the first set of holes is located at the vertices of a plurality of triangles within the hexagon formed by the second set of holes, and one of the second set of holes is located within each of the triangles.

[0013] Among other features, the third component further includes a gas inlet in fluid communication with the gas chamber, a fluid inlet in fluid communication with the first of the pair of arcuate grooves, and a fluid outlet in fluid communication with the second of the pair of arcuate grooves.

[0014] In another feature, the pair of arc-shaped grooves and the plurality of grooves are separated from the air chamber and the first set of holes and the second set of holes.

[0015] In another feature, the bottom surface of the second member further includes a semi-circular groove along the periphery of the bottom surface of the second member, wherein the semi-circular groove is in fluid communication with the air chamber.

[0016] In another feature, the semi-circular groove surrounds the first through holes in the second member.

[0017] In another feature, the semi-circular groove surrounds the pair of arc-shaped grooves.

[0018] In another feature, the pair of arcuate grooves includes a plurality of vertically extending ridges that contact the bottom surface of the third member.

[0019] In another feature, the height of the complex vertically extending ridges is equal to the depth of the complex grooves.

[0020] In another feature, the pair of arcuate grooves surround the first through holes in the second member.

[0021] In another feature, the pair of arcuate grooves and the plurality of grooves have the same depth.

[0022] In another feature, the multiple grooves are parallel to each other.

[0023] In another feature, the plurality of grooves has a serrated shape.

[0024] In another feature, the first end of the plurality of grooves is connected to the first of the pair of arcuate grooves, and the second end of the plurality of grooves is connected to the second of the pair of arcuate grooves.

[0025] In another feature, the first through holes in the second member are located between the plurality of grooves.

[0026] Among other features, the third member includes: an annular ridge located on the top surface of the third member and along the periphery of the third member, and a recess extending from the inner diameter of the annular ridge to the center of the top surface of the third member.

[0027] In another feature, the inner diameter of the annular ridge is greater than or equal to the inner diameter of the cylindrical portion of the first member.

[0028] In another feature, the outer diameter of the annular ridge is greater than or equal to the outer diameter of the cylindrical portion of the first member.

[0029] In another feature, the width of the annular ridge is greater than or equal to the thickness of the cylindrical portion of the first member.

[0030] In another feature, the inner diameter of the annular ridge is larger than the diameter of the substrate.

[0031] In another feature, the diameter of the recess is greater than or equal to the inner diameter of the cylindrical portion of the first member.

[0032] In another feature, the diameter of the recess is larger than the diameter of the substrate.

[0033] In another feature, the second through holes in the third member are located within the inner diameter of the annular ridge.

[0034] In another feature, the second through holes in the third member are located within the recess.

[0035] In another feature, the first component, the second component, and the third component are diffusely bonded.

[0036] In another feature, the ratio of the sum of the cross-sectional areas of the first set of holes to the cross-sectional area of ​​the cylindrical portion of the first member is between 4.5% and 5.5%.

[0037] In another feature, the ratio of the total cross-sectional area of ​​the first set of holes to the cross-sectional area of ​​the cylindrical portion of the first member is between 4% and 6%.

[0038] In another feature, the ratio of the number of holes in the first group to the number of holes in the second group is between 1.00 and 1.05.

[0039] In another feature, the density of the first group of holes and the second group of holes is between 4 and 5 holes per square inch.

[0040] Among other features, the system includes a spray head, a processing chamber, and a plasma generator disposed above the third member of the spray head to supply plasma to the spray head. The spray head is disposed at the top of the processing chamber. The system includes a base disposed within the processing chamber. The cylindrical portion of the first member of the spray head surrounds the top portion of the base. The system includes a gas delivery system for supplying gas to the gas chamber and a fluid delivery system for supplying fluid to one of the pair of arcuate recesses.

[0041] In another feature, the first set of holes in the spray head filters ions from the plasma and allows free radicals from the plasma to pass through the spray head and enter the processing chamber.

[0042] In another feature, the film deposited on the substrate has a non-uniformity of 0.0%.

[0043] In another feature, the film deposited on the substrate has a non-uniformity of less than 0.1%.

[0044] In another feature, the gap between the bottom surface of the disc-shaped portion of the first component of the spray head and the top surface of the base is between 0.11 inches and 0.2 inches.

[0045] In another feature, the processing chamber includes an atomic layer deposition (ALD) processing chamber, an atomic layer etching (ALE) processing chamber, a chemical vapor deposition (CVD) processing chamber, or a physical vapor deposition (PVD) processing chamber.

[0046] Among other features, the spray head for processing the substrate in the processing chamber includes a first member, a second member, and a third member. The first member includes a disc-shaped portion and a cylindrical portion extending perpendicularly from the disc-shaped portion. The diameter of the disc-shaped portion is larger than the outer diameter of the cylindrical portion. The inner diameter of the cylindrical portion is larger than the diameter of the substrate. The disc-shaped portion includes a first set of holes and a second set of holes, each having a first diameter and a second diameter, respectively. The first set of holes and the second set of holes extend from the center of the disc-shaped portion to the inner diameter of the cylindrical portion. The second member is disc-shaped and includes a plurality of first through holes aligned with the first set of holes in the first member. The second member has a top surface, a plurality of side surfaces, and a bottom surface on one side relative to the cylindrical portion that is attached to the disc-shaped portion of the first member and defines an air chamber. The air chamber is in fluid communication with and separated from the second set of holes in the first member. The top surface of the second member includes a pair of arcuate grooves along the periphery of the top surface and located at opposite ends of the top surface, and a plurality of grooves extending between the pair of arcuate grooves. The third member is disc-shaped and includes a plurality of second through holes aligned with the first through holes in the second member and the first set of holes in the first member. The third member has a bottom surface attached to the top surface of the second member. The first set of holes and the second set of holes are configured in a hexagonal pattern, a triangular pattern, or a combination of hexagonal and triangular patterns. The hexagons in the hexagonal pattern are equilateral hexagons, and the triangles in the triangular pattern are equilateral triangles. The first set of holes is configured in a hexagonal pattern, the second set of holes are located at the vertices of the plurality of triangles within the hexagon formed by the first set of holes, and one of the first set of holes is located within each of the triangles. The second set of holes is arranged in a hexagonal pattern, the first set of holes is located at the vertices of the complex triangles within the hexagon formed by the second set of holes, and one of the holes in the second set is located within each of the triangles.

[0047] Among other features, the third component further includes a gas inlet in fluid communication with the gas chamber, a fluid inlet in fluid communication with the first of the pair of arcuate grooves, and a fluid outlet in fluid communication with the second of the pair of arcuate grooves.

[0048] Among other features, the pair of arcuate grooves and the plurality of grooves are separated from the air chamber and the first set of holes and the second set of holes, the pair of arcuate grooves surround the first through holes in the second member, or the pair of arcuate grooves and the plurality of grooves have the same depth.

[0049] Among other features, the bottom surface of the second member further includes a semi-circular groove along the periphery of the bottom surface of the second member, the semi-circular groove being in fluid communication with the air chamber, and the semi-circular groove surrounding the first through holes in the second member or the semi-circular groove surrounding the pair of arcuate grooves.

[0050] Among other features, the pair of arcuate grooves includes a plurality of vertically extending ridges that contact the bottom surface of the third member, and the height of the plurality of vertically extending ridges is equal to the depth of the plurality of grooves.

[0051] Among other features, the plurality of grooves are parallel to each other, or the plurality of grooves have a serrated shape.

[0052] Among other features, the first end of the plurality of grooves is connected to the first of the pair of arcuate grooves, and the second end of the plurality of grooves is connected to the second of the pair of arcuate grooves.

[0053] Among other features, the first through holes in the second member are located between the plurality of grooves.

[0054] Among other features, the ratio of the total cross-sectional area of ​​the first group of holes to the cross-sectional area of ​​the cylindrical portion of the first member is between 4.5% and 5.5%; the ratio of the total cross-sectional area of ​​the first group of holes to the cross-sectional area of ​​the cylindrical portion of the first member is between 4% and 6%; the ratio of the number of the first group of holes to the number of the second group of holes is between 1.00 and 1.05; or the density of the first group of holes and the second group of holes is between 4 and 5 holes per square inch.

[0055] Among other features, the spray head for processing the substrate in the processing chamber includes a first member, a second member, and a third member. The first member includes a disc-shaped portion and a cylindrical portion extending perpendicularly from the disc-shaped portion. The diameter of the disc-shaped portion is larger than the outer diameter of the cylindrical portion. The inner diameter of the cylindrical portion is larger than the diameter of the substrate. The disc-shaped portion includes a first set of holes and a second set of holes, each having a first diameter and a second diameter, respectively. The first set of holes and the second set of holes extend from the center of the disc-shaped portion to the inner diameter of the cylindrical portion. The second member is disc-shaped and includes a plurality of first through holes aligned with the first set of holes in the first member. The second member has a top surface, a plurality of side surfaces, and a bottom surface on one side relative to the cylindrical portion, attached to the disc-shaped portion of the first member and defining an air chamber. The air chamber is in fluid communication with and separated from the second set of holes in the first member. The top surface includes a pair of arcuate grooves along its periphery and located at opposite ends of the top surface, and a plurality of grooves extending between the pair of arcuate grooves. The third member is disc-shaped and includes a plurality of second through holes aligned with the first through holes in the second member and the first set of holes in the first member. The third member has a bottom surface attached to the top surface of the second member. The third member includes an annular ridge located on the top surface of the third member and along its periphery, and a recess extending from the inner diameter of the annular ridge to the center of the top surface of the third member.

[0056] Among other features, the inner diameter of the annular ridge is greater than or equal to the inner diameter of the cylindrical portion of the first member, or the outer diameter of the annular ridge is greater than or equal to the outer diameter of the cylindrical portion of the first member.

[0057] Among other features, the width of the annular ridge is greater than or equal to the thickness of the cylindrical portion of the first member, or the inner diameter of the annular ridge is greater than the diameter of the substrate.

[0058] Among other features, the diameter of the recess is greater than or equal to the inner diameter of the cylindrical portion of the first member, or the diameter of the recess is greater than the diameter of the substrate.

[0059] Among other features, the second through holes in the third member are located within the inner diameter of the annular ridge, or the second through holes in the third member are located within the recess.

[0060] Among other features, a system includes a processing chamber and a spray head for processing a substrate within the processing chamber. The spray head is disposed at the top of the processing chamber. The spray head includes a first member, a second member, and a third member. The first member includes a disc-shaped portion and a cylindrical portion extending perpendicularly from the disc-shaped portion. The diameter of the disc-shaped portion is larger than the outer diameter of the cylindrical portion. The inner diameter of the cylindrical portion is larger than the diameter of the substrate. The disc-shaped portion includes a first set of holes and a second set of holes, each having a first diameter and a second diameter, respectively. The first set of holes and the second set of holes extend from the center of the disc-shaped portion to the inner diameter of the cylindrical portion. The second member is disc-shaped and includes a plurality of first through holes aligned with the first set of holes in the first member. The second member has a top surface, a plurality of side surfaces, and a bottom surface that is attached to the disc-shaped portion of the first member on one side relative to the cylindrical portion and defines an air chamber. The air chamber is in fluid communication with and separated from the second set of holes in the first member. The top surface includes a pair of arcuate grooves along its periphery and located at opposite ends of the top surface, and a plurality of grooves extending between the pair of arcuate grooves. The third member is disc-shaped and includes a plurality of second through holes aligned with the first through holes in the second member and the first set of holes in the first member. The third member has a bottom surface attached to the top surface of the second member. The system further includes a plasma generator disposed above the third member of the spray head for supplying plasma to the spray head, and a base disposed in the processing chamber. The cylindrical portion of the first member of the spray head surrounds the top portion of the base. The system further includes a gas delivery system for supplying gas to the air chamber and a fluid delivery system for supplying fluid to one of the pair of arcuate grooves.

[0061] Among other features, the first set of holes in the spray head filters ions from the plasma and allows free radicals from the plasma to pass through the spray head into the processing chamber.

[0062] Among other features, the film deposited on the substrate has a non-uniformity of 0.0%, the film deposited on the substrate has a non-uniformity of less than 0.1%, or the gap between the bottom surface of the disc-shaped portion of the first component of the spray head and the top surface of the base is between 0.11 inches and 0.2 inches.

[0063] Further applications of this disclosure will become apparent from the embodiments, the claims, and the drawings. These embodiments and specific examples are intended to illustrate the purpose only and are not intended to limit the scope of this disclosure. Simple Explanation of the Diagram

[0064] This disclosure can be more fully understood from the implementation methods and diagrams, wherein:

[0065] Figure 1 shows an example of a substrate processing system using remote plasma and a spray head, according to this disclosure;

[0066] Figure 2 shows a lateral cross-sectional view of the spray head of Figure 1 according to this disclosure;

[0067] Figure 3 shows a three-dimensional cross-sectional view of the spray head of Figure 1 according to this disclosure;

[0068] Figure 4 shows a bottom view of the spray head of Figure 1, according to this disclosure, wherein the air chamber is used to introduce the precursor gas into the spray head;

[0069] Figure 5 shows a top view of a cooling channel configured in the spray head of Figure 1 according to this disclosure, wherein the cooling channel is used to circulate coolant within the spray head;

[0070] Figure 6 shows a bottom view of the spray head of Figure 1 according to this disclosure, which shows an example of the perforation pattern used in the spray head;

[0071] Figure 7 shows an enlarged view of the hole pattern shown in Figure 6;

[0072] Figure 8 shows a top view of the spray head of Figure 1 according to this disclosure;

[0073] Figure 9 shows a perspective view of the top of the spray head of Figure 1 according to this disclosure; and

[0074] Figure 10 shows a perspective view of the bottom of the spray head of Figure 1 according to this disclosure.

[0075] In these diagrams, element symbols may be reused to represent similar and / or identical elements. Implementation

[0076] This disclosure relates to a substrate processing system using a remote plasma, wherein a grounded spray head filters damaging ions from the remote plasma and allows free radicals in the remote plasma to pass through into the processing chamber. Free radicals (which have unpaired electrons, but unlike ions, do not have a net charge) provide beneficial membrane properties. The pores in the spray head (which connects the source of the remote plasma to the processing chamber) are optimized to filter ions from the remote plasma and allow free radicals to pass through. For convenience, these pores are referred to throughout this disclosure as free radical pores.

[0077] Furthermore, one or more precursor systems are supplied to the processing chamber via individual chambers in the spray head, wherein the individual chambers are optimized for dosage uniformity and purge efficiency during ALD operation. The precursor systems are supplied from these individual chambers to the processing chamber via a second set of orifices in the spray head, which are referred to throughout this disclosure as precursor orifices. Separate delivery of the free radicals and precursors allows for independent optimization of both to achieve optimized membrane properties and uniformity.

[0078] Properties (e.g., diameter, aspect ratio, and number of radical pores) are selected to optimize the amount of radicals delivered to the substrate in the processing chamber and to balance the effectiveness of filtering ions (which may otherwise damage the substrate). Furthermore, the patterning (e.g., layout, distribution, and density) of the radical pores and precursor pores is optimized to provide film uniformity across the entire substrate. This architecture can be used with any type of plasma source and is also used with distal plasma-enhanced ALD or chemical vapor deposition (CVD) processes.

[0079] The spray head includes a planar base portion and a cylindrical portion extending vertically downward from the periphery of the base portion. The base portion includes a cooling and precursor gas chamber, free radical pores, and precursor pores. The cylindrical portion has an outer wall and an inner wall. The inner wall of the cylindrical portion defines the orifice of the spray head. A base supporting the substrate is disposed in a processing chamber, directly below the base portion of the spray head. The base includes a planar top portion and a vertical base portion extending vertically downward from the center of the top portion. The inner diameter (ID) of the cylindrical portion of the spray head (i.e., the inner wall diameter of the spray head) is larger than the outer diameter (OD) of the top portion of the base. The inner wall of the cylindrical portion of the spray head surrounds the top portion of the base and extends vertically below the top portion of the base. The cylindrical portion of the spray head shields the top portion of the base. The base moves downward to load the substrate, moves upward to process the substrate, and moves downward to remove the substrate. The top portion of the base can be moved vertically upwards and downwards within the cylindrical portion of the spray head to adjust the gap between the base portion and the top portion of the base.

[0080] The cylindrical portion of the spray head provides a relatively stable thermal and gas flow environment around the edge of the base, thus simplifying the procedure for varying the gap between the spray head and the base. Specifically, when the base moves vertically within the cylindrical portion of the spray head to adjust the gap between the spray head and the base, the cylindrical portion of the spray head (which extends vertically below the top portion of the base) provides symmetrical thermal boundary conditions (i.e., a region of relatively constant temperature) around the edge of the base.

[0081] Furthermore, as the cylindrical portion of the spray head moves within the base, this portion provides a relatively constant contraction for the gas flow around the base edge, simplifying the procedure for controlling the micro-volume of gas in the gap between the spray head and the base during ALD processing. The adjustable gap between the spray head and the base allows for precise control of the micro-volume in ALD processing. The narrow gap between the spray head and the base prevents the depletion of free radicals in the micro-volume of ALD processing. These and other features of the spray head disclosed herein are described in detail below.

[0082] This disclosure is arranged as follows. An example of a substrate processing system using remote plasma and a spray head designed according to this disclosure is shown and described with reference to FIG1. ​​Side and perspective cross-sectional views of the spray head are shown and described with reference to FIGS. 2 and 3. Bottom and top views of the gas chamber and cooling channel in the spray head are shown and described with reference to FIGS. 4 and 5, respectively. Top and bottom views of the spray head, as well as various features of free radical pores and precursor pores, are shown and described with reference to FIGS. 6-8. Perspective views of the top and bottom of the spray head are shown and described with reference to FIGS. 9 and 10, respectively.

[0083] Figure 1 shows a substrate processing system 100 according to the present disclosure. The substrate processing system 100 includes a processing chamber 103 and a spray head 104. The spray head 104 is made of metal (e.g., aluminum) or alloy. The spray head 104 includes a planar base portion 105 and a cylindrical portion 107 extending vertically downward from the base portion 105. The base portion 105 extends radially outward at the top of the cylindrical portion 107 (where it forms a flange 200). The base portion 105 is described in further detail below with reference to Figures 2 and 3. The cylindrical portion 107 has an outer wall 109-1 and an inner wall 109-2. The inner wall 109-2 of the cylindrical portion 107 defines an aperture 106 of the spray head 104 (see Figure 2). The diameter of the aperture 106 of the spray head 104 is equal to the diameter of the inner wall 109-2 of the cylindrical portion 107 (i.e., the ID of the cylindrical portion 107).

[0084] The processing chamber 103 has a side wall 108 and a bottom wall 110. The side wall 108 is attached to the bottom of the cylindrical portion 107 of the spray head 104. The side wall 108 is perpendicular to the base portion 105 of the spray head 104 and extends vertically downward from the bottom of the outer wall 109-1 of the cylindrical portion 107 of the spray head 104. The bottom wall 110 of the processing chamber 103 is parallel to the base portion 105 of the spray head 104 and perpendicular to the side wall 108 of the processing chamber 103, and is attached to the side wall 108 of the processing chamber 103.

[0085] The substrate processing system 100 includes a plasma source 102 disposed above a spray head 104. The spray head 104 is disposed between the plasma source 102 and a processing chamber 103. The spray head 104 separates the plasma source 102 from the processing chamber 103. The plasma source 102 is described in further detail below.

[0086] The base 112 is disposed in the processing chamber 103, directly below the spray head 104. During processing, the substrate 114 is disposed on the top surface 116 of the base 112. The top surface 116 of the base 112 is flat and parallel to the base portion 105 of the spray head 104 and the bottom wall 110 of the processing chamber 103. Therefore, the substrate 114 is parallel to the top surface 116 of the base 112, the base portion 105 of the spray head 104, and the bottom wall 110 of the processing chamber 103. The ID (i.e., the diameter of the inner wall 109-2 of the spray head 104) of the cylindrical portion 107 of the spray head 104 is greater than the OD (difference of the top surface 116 of the base 112). The ID (i.e., the diameter of the inner wall 109-2 of the spray head 104) of the cylindrical portion 107 of the spray head 104 is also greater than the OD of the substrate 114.

[0087] An actuator 120 driven by a motor 122 can vertically move the base 112 within the cylindrical portion 107 of the spray head 104 relative to the spray head 104. The plasma source 102 and the spray head 104 are fixed relative to the base 112. The gap between the bottom of the base portion 105 of the spray head 104 and the top surface 116 of the base 112 can be adjusted by vertically moving the base 112 within the cylindrical portion 107 of the spray head 104. For example, the gap between the bottom of the base portion 105 of the spray head 104 and the top surface 116 of the base 112 can be approximately 0.2 inches, 0.15 inches, or 0.11 inches.

[0088] The plasma source 102 may be dome-shaped as shown in the figure, or may be any other shape. The bottom end of the plasma source 102 is open and is attached to the top end of the first cylindrical member 124. The first cylindrical member 124 has a first flange 126, wherein the first flange 126 extends radially outward from near the center of the first cylindrical member 124. Therefore, the first cylindrical member 124 has the shape of the letter "T", wherein the letter "T" is rotated 90 degrees to the left.

[0089] A second cylindrical member 128 surrounds a first cylindrical member 124. The second cylindrical member 128 has a second flange 129, which extends radially inward from the bottom end of the second cylindrical member 128. Therefore, the second cylindrical member 128 has the shape of the letter "L," which is a horizontally flipped "L." A first flange 126 of the first cylindrical member 124 hangs over the second flange 129 of the second cylindrical member 128. The bottom ends of the first cylindrical member 124 and the second cylindrical member 128 are attached to the top of the base portion 105 of the spray head 104 near the periphery of the base portion 105.

[0090] For example only, plasma source 102 uses ICP to generate distal plasma (i.e., plasma outside processing chamber 103). Plasma source 102 receives one or more gases from gas distribution system 130 via gas injector 132, which is positioned on top of plasma source 102, although gas can be injected into plasma source 102 in other ways. Coil 134 is configured around plasma source 102. First end of coil 134 is grounded, while second end of coil 134 is connected to RF generation system 136.

[0091] RF generation system 136 generates RF power and outputs it to coil 134. By way of example only, RF generation system 136 may include RF generator 138 that generates RF power. This RF power is fed to coil 134 via matching network 140. The RF power supplied to coil 134 is ignited by one or more gases injected into plasma source 102 by gas injector 132, generating plasma 142. Since plasma source 102 generates plasma 142 at the distal end (i.e., the outer side) of processing chamber 103, this plasma 142 is referred to as distal plasma 142.

[0092] The gas delivery system 130 includes one or more gas sources 150-1, 150-2, ..., and 150-N (collectively referred to as gas sources 150), where N is a positive integer. The gas sources 150 are connected to a manifold 156 via valves 152-1, 152-2, ..., and 152-N (collectively referred to as valves 152) and mass flow controllers 154-1, 154-2, ..., and 154-N (collectively referred to as mass flow controllers 154). The manifold 156 is connected to a gas injector 132.

[0093] The spray head 104 is further described in detail below with reference to FIG2-8. In short, the base portion 105 of the spray head 104 includes a first set of holes (also referred to as free radical holes as described above) 160-1, 160-2, ..., and 160-N (collectively referred to as free radical holes 160), where N is an integer greater than 1. The free radical holes 160 extend from the top surface 162 of the base portion 105 of the spray head 104 to the substrate-facing bottom surface 164 (also referred to as the panel 164) of the base portion 105 of the spray head 104.

[0094] Furthermore, the base portion 105 of the spray head 104 includes a gas chamber 166, which is separate from and not in fluid communication with the free radical pores 160. The gas chamber 166 receives one or more precursor gases from the second gas delivery system 170. The base portion 105 of the spray head 104 further includes a second set of pores (also referred to above as precursor pores) 172-1, 172-2, ..., and 172-N (collectively referred to as precursor pores 172), where N is an integer greater than 1. The precursor pores 172 extend from the gas chamber 166 to the panel 164 of the spray head 104. The free radical pores 160 are not in fluid communication with either the gas chambers 166 or the precursor pores 172. The diameter and length of the free radical pores 160 are greater than the diameter and length of the precursor pores 172.

[0095] The base portion 105 of the spray head 104 further includes a plurality of grooves 168-1, 168-2, ..., and 168-N (collectively referred to as grooves 168), where N is an integer greater than 1. The grooves 168 form cooling channels (described with reference to FIG3), through which coolant flows. The fluid delivery system 180 supplies coolant to the grooves 168 via an inlet (shown in FIG3) of the base portion 105 of the spray head 104.

[0096] One or more temperature sensors (not shown) may be disposed in the base portion 105 of the spray head 104. The temperature sensors may be connected to a temperature controller 182. The temperature controller 182 controls the supply of coolant from the fluid delivery system 180 to the recess 168 to control the temperature of the spray head 104.

[0097] Additionally, although not shown, base 112 may include one or more heaters, a cooling system that receives coolant from fluid delivery system 180, and one or more temperature sensors. Temperature controller 182 may be connected to the temperature sensors in base 112. Temperature controller 182 may control the power supply to the heaters. Temperature controller 182 may control the coolant supply from fluid delivery system 180 to the cooling system in base 112 to control the temperature of base 112.

[0098] Valve 186 and pump 188 can control the pressure in the processing chamber 103 during processing and evacuate the reactants from the processing chamber 103. System controller 190 can control the components of the substrate processing system 100.

[0099] The spray head 104 will now be described in further detail. As described above, the spray head 104 filters ions from the distal plasma 142 and allows free radicals from the distal plasma 142 to enter the processing chamber 103 through the free radical pores 160. The free radicals react with the precursor in the gap between the spray head 104 and the substrate 112, and a thin film is deposited on the substrate 114 using a process such as ALD. The open area provided by the free radical pores 160 through the spray head 104 to allow free radicals to pass through, the density and pattern of the free radical pores 160 and the precursor pores 172, and the structural and functional properties of the cylindrical portion 107 of the spray head 104 (all of which will be described in detail below) provide near-zero radial and azimuth inhomogeneities in the film deposited using the spray head 104.

[0100] Figure 2 shows a side cross-sectional view of the spray head 104. The spray head 104 includes a base portion 105 and a cylindrical portion 107 extending vertically downward from the base portion 105. The base portion 105 of the spray head 104 is horizontal and parallel to the top surface 116 of the base 112 (see Figure 1) and the bottom wall 110 of the processing chamber 103 (see Figure 1). The base portion 105 extends radially outward from the outer diameter (OD) of the cylindrical portion 107 to form a flange 200. The flange 200 is secured to the top plate (not shown) of the processing chamber 103 using fasteners 202. An O-ring (not shown) may be provided between the flange 200 and the top plate to form a seal between the spray head 104 and the top plate.

[0101] The top surface 162 of the base portion 105 of the spray head 104 includes an annular ridge 210, which has a relatively small height. The annular ridge 210 is also shown in Figures 3, 8, and 9. When the spray head 104 is positioned on a surface and the top surface 162 of the base portion 105 rests against that surface (i.e., if the spray head 104 is placed face down on that surface), the annular ridge 210 protects the free radical pores 160 during operation of the spray head 104. The width of the annular ridge 210 is approximately (but not necessarily) the same as the thickness of the cylindrical portion 107.

[0102] The top surface 162 of the base portion 105 of the spray head 104 also includes a recess 212 extending from the ID of the annular ridge 210 to the center of the spray head 104. The recess 212 is also shown in FIG. 3. The diameter of the recess 212 is approximately (but not necessarily) the same as the ID of the cylindrical portion 107 of the spray head 104. For example, the diameter of the recess 212 may be less than or equal to the ID of the cylindrical portion 107 of the spray head 104. Free radical pores 160 are disposed in the region of the recess 212. The recess 212 and the annular ridge 210 together protect the free radical pores 160 during operation of the spray head 104.

[0103] The diameter of the annular ridge 210 (ID) and the recess 212 is approximately equal to the diameter of the cylindrical portion 107. In some examples, the diameter of the annular ridge 210 and the recess 212 may be greater than the diameter of the cylindrical portion 107. The diameter of the annular ridge 210 (OD) may be greater than or equal to the diameter of the cylindrical portion 107. In some examples, the diameter of the annular ridge 210 and the recess 212 may be less than the inner diameter of the cylindrical portion 107; and the diameter of the annular ridge 210 may be less than the diameter of the cylindrical portion 107. Therefore, the width of the annular ridge 210 may be greater than, equal to, or less than the thickness of the cylindrical portion 107.

[0104] The base portion 105 of the spray head includes an air chamber 166 and a precursor hole 172 extending vertically from the air chamber 166 through the base portion 105 and through the panel 164 of the spray head 104. The air chamber 166 is shown and described in further detail below with reference to Figures 3 and 4.

[0105] The diameter and length of the free radical pore 160 are greater than those of the precursor pore 172. As shown in 220, the free radical pore 160 is tapered at its apex (i.e., on the side facing the plasma source 102, see FIG1). The free radical pore 160 and the precursor pore 172 are cylindrical and are arranged in the pattern described in detail below with reference to FIGS. 6 and 7. As described in detail with reference to FIGS. 6 and 7, the total cross-sectional area of ​​the free radical pore 160 is optimized to filter ions from the distal plasma 142, allowing only free radicals from the distal plasma 142 to enter the processing chamber 103 through the spray head 104.

[0106] The base portion 105 of the spray head 104 includes a groove 168 that forms a cooling channel through which the coolant circulates. The groove 168 and the cooling channel are shown and described in further detail below with reference to Figures 3 and 5.

[0107] The outer wall 109-1 of the cylindrical portion 107 of the spray head 104 does not directly contact the top plate of the processing chamber 103. Due to this feature, and because the cylindrical portion 107 of the spray head 104 extends vertically below the top surface 116 of the base 112 (over which the substrate 114 is disposed (see FIG. 1)), the cylindrical portion 107 of the spray head 104 provides symmetrical thermal boundary conditions (i.e., a region of relatively constant temperature) around the edge of the top surface 116 of the base 112 (see FIG. 1). Therefore, the base 112 can be vertically moved within the cylindrical portion 107 (i.e., within the height of the cylindrical portion 107) to adjust the gap between the spray head 104 and the base 112 without significantly altering the thermal boundary conditions around the edge of the top surface 116 of the base 112, which is advantageous during substrate processing.

[0108] Furthermore, as described above, when the base 112 moves up and down within the cylindrical portion 107, the spray head 104 of the cylindrical portion 107 also provides a relatively constant contraction for the gas flow around the edge of the top surface 116 of the base 112. This simplifies the procedure for controlling the micro-volume of gas in the gap between the spray head 104 and the base 112 because the gas flow conditions around the edge of the top surface 116 of the base 112 remain relatively constant because the cylindrical portion 107 surrounds and is close to the edge of the top surface 116 of the base 112. Therefore, the base 112 can move vertically within the cylindrical portion 107 (i.e., within the height of the cylindrical portion 107) to adjust the gap between the spray head 104 and the base 112 without significantly altering the gas flow conditions around the edge of the top surface 116 of the base 112.

[0109] The adjustable gap between the panel 164 of the spray head 104 and the top surface 116 of the base 112 allows for precise control of micro-volumes in the ALD process. Furthermore, the narrow gap between the panel 164 of the spray head 104 and the top surface 116 of the base 112 prevents the depletion of free radicals in the micro-volumes within this gap. These features are all provided by the structure of the cylindrical portion 107 of the spray head 104.

[0110] Figure 3 shows a three-dimensional cross-sectional view of the spray head 104, and further details the structure of the spray head 104. The spray head 104 includes three components: a first component 230-1, a second component 230-2, and a third component 230-3. The first component 230-1, the second component 230-2, and the third component 230-3 are joined together by diffusion bonding (or by using fasteners or brazing) to form the spray head 104.

[0111] The first component 230-1 includes a top portion 231 and a cylindrical portion 107 of the spray head 104. The top portion 231 of the first component 230-1, the second component 230-2, and the third component 230-3 form the base portion 105 of the spray head 104. The top portion 231 of the first component 230-1 is flat and disc-shaped. The cylindrical portion 107 extends vertically downward from the periphery of the top portion 231. The top portion 231 of the first component 230-1 extends radially outward beyond the OD of the cylindrical portion 107. Therefore, the diameter of the top portion 231 of the first component 230-1 is larger than the OD of the cylindrical portion 107. The area of ​​the top portion 231 located within the inner wall 109-2 of the cylindrical portion 107 (i.e., within the ID of the cylindrical portion 107) forms the panel 164 of the spray head 104.

[0112] Radical holes 160 and precursor holes 172 are located within a region of panel 164, wherein the diameter of this region is less than or equal to the ID of cylindrical portion 107. As shown in Figures 1 and 6 (see the dashed circle 250 in Figure 6, which represents the diameter of substrate 114), the diameter of the region containing radical holes 160 and precursor holes 172 is greater than the diameter of substrate 114, and also greater than or equal to the OD of the top surface 116 of base 112. The diameter and area of ​​the region of panel 164 containing radical holes 160 and precursor holes 172 are the same as the diameter and area of ​​recess 212, which is shown and described above with reference to Figure 2.

[0113] In some examples, the first component 230-1 may be integral. In other words, the top portion 231 and the cylindrical portion 107 of the first component 230-1 may not be separate components attached to each other; instead, the first component 230-1 may be a single structure, and the top portion 231 of the first component 230-1 may be integrated with the cylindrical portion 107 into a single integral structure. Alternatively, in some examples, the top portion 231 and the cylindrical portion 107 may be separate components joined together (e.g., by fasteners or diffusion bonding) to form the first component 230-1.

[0114] The second member 230-2 will now be described with reference to Figures 4 and 5, which show a bottom view and a top view of the second member 230-2, respectively. The second member 230-2 is disposed on and attached to the top surface 232 of the first member 230-1. The second member 230-2 is disc-shaped and has the same diameter as the top portion 231 of the first member 230-1. Therefore, the diameter of the second member 230-2 is also larger than the OD of the cylindrical portion 107.

[0115] The top surface 234 and side surface 236 of the second component 230-2, and the top surface 232 of the first component 230-1 define the gas chamber 166. Figure 4 shows the gas chamber 166 in further detail. As shown in Figure 4, the bottom surface 237 of the second component 230-2 includes a semi-circular or horseshoe-shaped groove 167 along the periphery of the bottom surface 237. The groove 167 is in fluid communication with the gas chamber 166 via a plurality of outlet ports 169-1, 169-2, ..., and 169-N (collectively referred to as outlet ports 169), where N is an integer greater than 1. The groove 167 is in fluid communication with a gas inlet 240 provided on the third component 230-3 via an inlet 171, where the inlet 171 is in fluid communication with the gas inlet 240. Therefore, the gas chamber 166 is in fluid communication with the gas inlet 240 via the groove 167.

[0116] Gas inlet 240 is connected to the second gas delivery system 170 shown in FIG. 1. Gas chamber 166 receives one or more precursors from the second gas delivery system 170 via gas inlet 240 and groove 167. Gas chamber 166 is in fluid communication with precursor orifice 172 in first component 230-1. The precursor flows from gas inlet 240, through groove 167, gas chamber 166, and precursor orifice 172 into processing chamber 103.

[0117] The free radical pore 160 is drilled through the first component 230-1, the second component 230-2, and the third component 230-3. Therefore, each of the first component 230-1, the second component 230-2, and the third component 230-3 includes a through hole as part of the free radical pore 160. Since the free radical pore 160 passes through the second component 230-2, the second component 230-2 includes a through hole as part of the free radical pore 160 (and is therefore also shown as 160), and this through hole is aligned with a portion of the free radical pore 160 in the first component 230-1 and the third component 230-3.

[0118] The groove 167 surrounds the through hole 160 of the second component 230-2 (which is part of the free radical cavity 160), but is not in fluid communication with it. The through hole 160 in the second component 230-2 is not in fluid communication with the groove 167, the gas chamber 166, and the precursor cavity 172. Therefore, the free radical cavity 160 is not in fluid communication with the gas chamber 166 and the precursor cavity 172.

[0119] The top surface 234 of the second component 230-2 includes a groove 168 forming a cooling channel. Figure 5 shows the groove 168 and the cooling channel in further detail. As shown in Figure 5, the top surface 234 of the second component 230-2 includes two arcuate or semicircular grooves 173-1 and 173-2 (collectively referred to as grooves 173) along the periphery of the top surface 234. These grooves 173 are located on opposite sides of the top surface 234. Groove 173-1 includes an inlet 177-1, which is in fluid communication with a fluid inlet 242 provided on the third component 230-3. Groove 173-2 includes an outlet 177-2, which is in fluid communication with a fluid outlet 244 provided on the third component 230-3 (shown in Figures 8 and 9).

[0120] The grooves 168 are parallel to each other and extend across the top surface 234 between the grooves 173. Each of the grooves 168 has one end connected to groove 173-1 and the other end connected to groove 173-2. Therefore, the grooves 168 and 173 are in fluid communication. The grooves 173 and 168 form a cooling channel.

[0121] Because the grooves 173 are semi-circular, the lengths of the grooves 168 are different. The grooves 168 have the same width and depth. The grooves 168 can be wavy or twisted (i.e., serrated), but can also be straight. The grooves 173 are not directly connected to each other; rather, they are connected to each other via the grooves 168. The cooling channel formed by the grooves 173 and 168 extends beyond the diameter of the substrate 114 (shown by the dashed circle 250).

[0122] A fluid inlet 242 on the third component 230-3 is connected to the fluid delivery system 180. The fluid delivery system 180 supplies coolant to the fluid inlet 242. The coolant flows through the fluid inlet 242, through recesses 173-1, 168, and 173-2, and exits through the fluid outlet 244.

[0123] The groove 173 includes a plurality of ridges 175-1, 175-2, ..., and 175-N (collectively referred to as ridges 175), where N is an integer greater than 1. The ridges 175 are generally elliptical, but can be any other shape. The ridges 175 extend vertically upward from the bottom portion of the groove 173 and contact the bottom surface 238 of the third member 230-3. The number of ridges 175 in each of the grooves 173 is (but not necessarily) approximately equal to the number of grooves 168.

[0124] Ridge 175 facilitates the flow of coolant through grooves 173 and 168. The depth of groove 168 is approximately equal to the height of ridge 173. Grooves 168 and 173 have the same depth. Groove 167 in the bottom surface 237 of the second member 230-2 surrounds groove 173 in the top surface 234 of the second member 230-2.

[0125] As shown in Figure 5, the groove 173 surrounds the through hole 160 of the second component 230-2 (which is part of the free radical pore 160), but is not in fluid communication with it. The through hole 160 of the second component 230-2 (which is part of the free radical pore 160) is located on either side of the groove 168.

[0126] The third component 230-3 is disposed on and attached to the top surface 234 of the second component 230-2. The third component 230-3 is also disc-shaped and has the same diameter as the top portion 231 of the first component 230-1. Therefore, the diameter of the third component 230-3 is also larger than the OD of the cylindrical portion 107. Furthermore, the second component 230-2 and the third component 230-3 have the same diameter.

[0127] The top surface 162 of the third member 230-3 includes an annular ridge 210 and a recess 212. The recess 212 extends from the ID of the annular ridge to the center of the top surface 162 of the third member 230-3. The annular ridge 210 and the recess 212 have been shown and described in detail above with reference to FIG2. Therefore, for the sake of brevity, the annular ridge 210 and the recess 212 will not be described again.

[0128] The third component 230-3 includes a gas inlet 240, a fluid inlet 242, and a fluid outlet 244 (shown in Figures 8 and 9). As described above, the gas inlet 240 is in fluid communication with the groove 167 and the gas chamber 166 in the second component 230-2. The fluid inlet 242 is in fluid communication with the groove 173-1 in the second component 230-2. The fluid outlet 244 is in fluid communication with the groove 173-2 in the second component 230-2.

[0129] Therefore, fluid inlet 242 and fluid outlet 244 are in fluid communication with groove 173 and groove 168 in the second component 230-2. Coolant supplied by fluid delivery system 180 flows into fluid inlet 242, passes through the cooling channel formed by groove 173 and groove 168, and exits the cooling channel through fluid outlet 244. Coolant leaving fluid outlet 244 can return to fluid delivery system 180.

[0130] As described above, the free radical pore 160 is drilled through the first component 230-1, the second component 230-2, and the third component 230-3; therefore, each of the first component 230-1, the second component 230-2, and the third component 230-3 includes a through hole as part of the free radical pore 160. Since the free radical pore 160 passes through the third component 230-3, the third component 230-3 includes a through hole (and is therefore also shown as 160) as part of the free radical pore 160, and this through hole is aligned with a portion of the free radical pore 160 in the second component 230-2 and the first component 230-1. The through hole 160 in the third component 230-3 is not in fluid communication with the grooves 167, 168, and 173 in the second component 230-2. Therefore, the through hole 160 in the third component 230-3 is not in fluid communication with the precursor pore 172.

[0131] The first component 230-1, the second component 230-2, and the third component 230-3 are joined together by diffusion bonding. When multiple components are joined by brazing, diffusion bonding removes commonly used filler. Since residual filler can easily remain after brazing and subsequent cleaning, removing the filler eliminates the possibility of contamination. Alternatively, fasteners and / or brazing can be used to join the first component 230-1, the second component 230-2, and the third component 230-3.

[0132] After the first component 230-1, the second component 230-2, and the third component 230-3 are joined together (using any method), the free radical hole 160 is drilled through the first component 230-1, the second component 230-2, and the third component 230-3 according to the pattern described below with reference to Figures 6 and 7. The precursor hole 172 in the first component 230-1 is aligned with the gas chamber 166 in the second component 230-2.

[0133] As described above, the free radical pore 160 is cylindrical, and its diameter and length are greater than those of the precursor pore 172. As shown in 220, the free radical pore 160 is conical at its apex (i.e., the end facing the plasma source 102). The free radical pore 160 is not in fluid communication with the grooves 168, 173, 167, the gas chamber 166, and the precursor pore 172. The pattern, layout, and density of the free radical pore 160 and the precursor pore 172 will now be described in detail.

[0134] Figures 6 and 7 show in detail the free radical pores 160 and the precursor pores 172. Figure 6 shows a bottom view of the spray head 104. Figure 7 shows an enlarged view of a portion of the bottom view of the spray head 104. As shown in Figures 6 and 7, the free radical pores 160 and the precursor pores 172 are configured in a hexagonal / triangular pattern. This pattern is uniformly arranged around the center of the spray head 104. Although the hexagons and triangles are shown and described below as equilateral hexagons and triangles, other polygons and triangles may be used.

[0135] Specifically, precursor pores 172 are positioned at the vertices of an equilateral hexagon, as shown in Figure 7. As shown at 252 in Figure 6, radical pores 160 are also positioned at the vertices of an equilateral hexagon. Furthermore, as shown in Figure 7, precursor pores 172 are positioned at the vertices of an equilateral triangle. Radical pores 160 are located within the triangle formed by precursor pores 172 and are equidistant from the vertices of this triangle. Radical pores 160 are also positioned at the vertices of an equilateral triangle. In at least some of the triangles formed by radical pores 160, precursor pores 172 are located within the triangle formed by radical pores 160. Precursor pores 172 are equidistant from the vertices of the triangle formed by radical pores 160.

[0136] As shown in Figure 6.252, the free radical pores 160 are arranged at the vertices of the equilateral hexagon and within the hexagon formed by the free radical pores 160, while the precursor pores 172 are arranged at the vertices of the triangle, with the free radical pores 160 arranged within the triangle. As shown in Figure 6.254, the precursor pores 172 are arranged at the vertices of the equilateral hexagon and within the hexagon formed by the precursor pores 172, while the free radical pores 160 are arranged at the vertices of the triangle, with the precursor pores 172 arranged within the triangle.

[0137] The free radical pores 160 and precursor pores 172 are arranged relatively densely on the panel 164 in the pattern described above. For example, the average density of the free radical pores 160 and precursor pores 172 may be approximately 4.5 pores / square inch. For example, the average density may be between 4 and 5 pores / square inch.

[0138] Furthermore, the number of free radical pores 160 and the number of precursor pores 172 can be almost equal. In some examples, the number of free radical pores 160 can be slightly greater than the number of precursor pores 172. For example, the ratio of the number of free radical pores 160 to the number of precursor pores 172 can be between 1.00 and 1.05.

[0139] Furthermore, the free radical pores 160 and precursor pores 172 are distributed throughout the panel 164 with the aforementioned pattern and density (i.e., from the center of the cylindrical portion 107 to ID). Figure 6 shows a circle 250 representing the diameter of the substrate 114. As shown, the pattern and density of the free radical pores 160 and precursor pores 172 extend radially beyond the circle 250 in the panel 164 to the ID of the cylindrical portion 107. The radial extension of the pattern and density of the free radical pores 160 and precursor pores 172 beyond the OD of the substrate 114 ensures that the pattern and density are uniform from the center of the panel 164 to at least the point where the circle 250 (i.e., the OD of the substrate 114) extends on the panel 164.

[0140] Due to the range and uniformity of these patterns and density features, material can be uniformly deposited on the substrate 114. For example, non-uniformity of 0.0%, less than 0.1%, less than 0.5%, or less than 1% can be achieved in the material deposited on the substrate 114 using the plasma source 102 and the spray head 104.

[0141] Furthermore, characteristics such as the size (diameter and length) and number of radical pores 160 determine the efficiency with which radicals from the distal plasma 142 can pass from the plasma source 102 through the spray head 104 into the processing chamber 103. While some of these characteristics can be improved to increase the number of radicals that can pass through the radical pores 160, the spray head 104 may not be able to effectively filter ions from the distal plasma 142 for some radical pores 160 with certain sizes or aspect ratios. Therefore, the radical pores 160 are designed such that the percentage of the area open to allow radicals from the plasma source 102 to pass through the spray head 104, while still filtering ions, is relatively high (examples are shown below).

[0142] Specifically, the percentage of the area open to allow free radicals to pass from plasma source 102 through spray head 104 is defined as the ratio of the total cross-sectional area of ​​all free radical pores 160 to the cross-sectional area of ​​the bottom of plasma source 102 (attached to spray head 104). Plasma source 102 and spray head 104 are designed such that the cross-sectional area of ​​the orifice 106 of spray head 104 (i.e., the cross-sectional area of ​​the inner wall 109-2 of cylindrical portion 107) is substantially the same as, and therefore can be replaced by, the cross-sectional area of ​​the bottom of plasma source 102.

[0143] Therefore, the percentage of the area open to allow free radicals to pass from plasma source 102 through spray head 104 can be defined as the ratio of the total cross-sectional area of ​​all free radical pores 160 to the cross-sectional area of ​​the orifice 106 of spray head 104 (i.e., the cross-sectional area of ​​the inner wall 109-2 of cylindrical portion 107). Mathematically, this ratio is equal to the number of free radical pores 160 multiplied by the square of the diameter of the free radical pores 160, divided by the square of ID of the orifice 106 of spray head 104 (i.e., the cross-sectional area of ​​the inner wall 109-2 of cylindrical portion 107).

[0144] While this area percentage determines the efficiency of ion filtration by free radicals from the distal plasma 142, it also improves non-uniformity, which is achieved by using the combination of the pattern and density of the free radical pores 160 and precursor pores 172. For example, to achieve near-zero non-uniformity in the material deposited on the substrate 114 (see the example above), in addition to the pattern and density of the free radical pores 160 and precursor pores 172, the percentage of the area open to allow free radicals to pass through the spray head 104 can be approximately 5%. For example, this area percentage can be between 4.5% and 5.5%. For example, this area percentage can be between 4% and 6%.

[0145] Furthermore, since optimizing the area percentage increases the efficiency of free radicals entering the processing chamber 103 through the spray head, processing cycles (e.g., ALD cycles) can be executed rapidly using the pattern, density, and area percentage designed above. Because these processing cycles can be executed quickly, the rate of substrates that can be processed in a given amount of time (i.e., production volume) can be increased.

[0146] Figure 8 shows a top view of the spray head 104. In this figure, only the free radical pores 160 are visible; the precursor pores 172 are not. A gas inlet 240 connected to the gas chamber 166 is also shown. A fluid inlet 242 and a fluid outlet 244 connected to the channel formed by the groove 168 are also shown. Furthermore, in this figure, the cone at the top of the free radical pores 160 is shown at position 220. An annular ridge 210 and a recess 212 are also shown. These and other elements shown in the figure have been described in detail above with reference to Figures 2 and 3. Therefore, for the sake of brevity, these elements will not be described again.

[0147] Figures 9 and 10 show perspective views of the top and bottom of the spray head 104, respectively. Similarly, in the perspective view of the top of the spray head 104 shown in Figure 9, only the free radical pores 160 are visible; the precursor pores 172 are not. Furthermore, a gas inlet 240 connected to the gas chamber 166 is shown. Additionally, a fluid inlet 242 and a fluid outlet 244 connected to the channel formed by the groove 168 are shown. This figure provides a preferred view of the cylindrical portion 107 of the spray head 104 compared to other figures.

[0148] In the perspective view of the bottom of the spray head 104 shown in Figure 10, the free radical pores 160 and precursor pores 172 extend from the pattern described above with reference to Figures 7 and 8 all the way to the ID of the cylindrical portion 107 of the spray head 104. Furthermore, the extent (or height) of the cylindrical portion of the spray head 104 relative to the base portion 105 of the spray head 104 can be understood from the bottom of the spray head 104 in this figure.

[0149] The foregoing embodiments are illustrative in nature and are not intended to limit the scope of this disclosure, its application, or use. The broad teachings of this disclosure may be implemented in various forms. Therefore, although this disclosure includes specific examples, its true scope should not be limited thereto, as other modifications will become apparent upon reading the drawings, the specification, and the following claims.

[0150] It should be understood that one or more steps in a method may be performed in different orders (or simultaneously) without altering the principles of this disclosure. Furthermore, although the embodiments are described above as having certain features, any or more of these features described for any embodiment of this disclosure may be implemented in, and / or combined with, features of any other embodiment, even if such combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and substitution of one or more embodiments for each other still falls within the scope of this disclosure.

[0151] Spatial and functional relationships between multiple elements (e.g., between modules, circuit elements, semiconductor layers, etc.) can be described using various terms, including “connected,” “joined,” “coupled,” “adjacent,” “beside,” “on top of,” “above,” “below,” and “set in.” Unless explicitly described as “direct,” the relationship between the first and second elements described in the foregoing disclosure can be a direct relationship in which no other intermediate elements exist between the first and second elements, or an indirect relationship in which one or more intermediate elements (whether spatial or functional) exist between the first and second elements. As used herein, the phrase “at least one of A, B, and C” should be considered to represent the logic (A or B or C) using a non-exclusive logical OR, and should not be considered to represent “at least one A, at least one B, and at least one C.”

[0152] In some embodiments, the controller is part of a system, which may be part of the examples described above. Such a system may include semiconductor processing equipment comprising one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (pedestals, gas flow systems, etc.). These systems may be integrated with electronic components to control the operation of semiconductor wafers or substrates before, during, and after processing. The electronic components may be referred to as a "controller," which controls various components or sub-components of one or more systems.

[0153] Depending on the processing requirements and / or system type, the controller can be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positioning and operation settings, wafer transfer in and out of a tool and other transfer tools, and / or transfer chambers connected to or interconnected with a particular system.

[0154] In a broad sense, a controller can be defined as an electronic device with various integrated circuits, logic, memory, and / or software to receive instructions, send instructions, control operations, initiate cleaning operations, initiate endpoint measurements, etc. The integrated circuits may include chips storing program instructions in firmware, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software).

[0155] Program instructions can be transmitted to the controller in various independent settings (or program files) to define operating parameters for performing specific steps on, or for, a semiconductor substrate or a system. In some embodiments, the operating parameters may be part of a recipe defined by a process engineer to complete one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0156] In some embodiments, the controller may be part of a computer, or coupled to a computer that is integrated into and coupled to the system, or otherwise networked to the system, or a combination thereof. For example, the controller may reside in the "cloud," or be a part or all of the FAB host computer system, allowing remote access to the board processing. The computer may enable remote access to the system to monitor the current progress of processing operations, view the history of past processing operations, view trends or performance metrics from multiple processing operations, change parameters of the current processing, set processing steps after the current processing, or start a new processing.

[0157] In some examples, a remote computer (e.g., a server) may provide a processing recipe to the system via a network, which may include a local area network (LAN) or the Internet. The remote computer may include a user interface capable of inputting or writing parameters and / or settings, which are then transmitted from the remote computer to the system. In some examples, the controller receives instructions in the form of data specifying parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of step to be performed and the type of tool the controller is configured to connect to or control.

[0158] Therefore, as described above, the controller can be distributed, for example, by including one or more discrete controllers that are networked together and operate toward a common purpose (such as the steps and control described herein). An example of a controller distributed for this purpose would be one or more integrated circuits located on the chamber, which are connected to one or more integrated circuits located at a remote location (e.g., located on a platform layer or as part of a remote computer) and combined to control the steps on the chamber.

[0159] Without limitation, exemplary systems may include plasma etching chambers or modules, deposition chambers or modules, spin-clean chambers or modules, metal plating chambers or modules, cleaning chambers or modules, edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, orbital chambers or modules, or other semiconductor processing systems that may be associated with or used in the processing and / or manufacturing of semiconductor wafers.

[0160] As described above, depending on the one or more processing steps to be performed by the tool, the controller may be connected to one or more other tool circuits or modules, other tool components, clustered tools, other tool interfaces, adjacent tools, neighboring tools, tools distributed throughout the plant, a main computer, another controller, or tools used in material handling to bring the substrate container into and out of the tool location and / or loading port of the semiconductor manufacturing plant.

[0161] 100: Substrate Processing System 102: Plasma source 103: Processing Chamber 104: Spray head 105: Base portion 106: Kong 107: Cylindrical section 108: Sidewall 109-1:Outer wall 109-2: Inner wall 110: Bottom wall 112: Base 114:Substrate 116: Top surface 120: Actuator 122: Motor 124: First cylindrical component 126: First flange 128: Second cylindrical component 129: Second flange 130: Gas distribution system 132: Gas Injector 134: Coil 136: RF generation system 138: RF Generator 140: Matching network 142: Plasma 150, 150-1, ..., 150-N: Gas source 152, 152-1, ..., 152-N: Valve section 154, 154-1, ..., 154-N: Mass flow controller 156: manifold 160, 160-1, ..., 160-N: Free radical pores / through-pores 162: Top surface 164: Bottom surface / panel 166: Air chamber 167: Groove 168, 168-1, ..., 168-N: Groove 169, 169-1, ..., 169-N: Output ports 170: Second gas delivery system 171: Input Port 172, 172-1, ..., 172-N: Precursor pores 173, 173-1, 173-2: Groove 175, 175-1, ..., 175-N: Ridge 177-1: Input Port 177-2: Output Port 180: Fluid transport system 182: Temperature Controller 186: Valve 188: Pump 190: System Controller 200: Flange 202: Fasteners 210: Ring-shaped ridge 212: Depression 230-1: First component 230-2: Second component 230-3: Third component 231: Top section 232: Top surface 234: Top surface 236: Side surface 237: Bottom surface 238: Bottom surface 240: Gas inlet 242: Fluid inlet 244: Fluid outlet 250: Circle

Claims

1. A spray head for processing a substrate in a processing chamber, the spray head comprising: The first component includes a disc-shaped portion and a cylindrical portion extending vertically from the disc-shaped portion. The diameter of the disc-shaped portion is larger than the outer diameter of the cylindrical portion, and the inner diameter of the cylindrical portion is larger than the diameter of the substrate. The disc-shaped portion includes a first set of holes and a second set of holes having a first diameter and a second diameter, respectively, and the first set of holes and the second set of holes extend from the center of the disc-shaped portion to the inner diameter of the cylindrical portion. The second component, which is disc-shaped and includes a plurality of first through holes aligned with the first set of holes in the first component, has a top surface, a plurality of side surfaces, and a bottom surface attached to the disc-shaped portion of the first component on one side relative to the cylindrical portion and defining an air chamber that is in fluid communication with and separated from the second set of holes in the first component. The top surface includes a pair of arcuate grooves along the periphery of the top surface and located at opposite ends of the top surface, and a plurality of grooves extending between the pair of arcuate grooves. The third component, which is disc-shaped and includes a plurality of second through holes aligned with the first through holes and the first set of holes in the second component, has a bottom surface attached to the top surface of the second component.

2. The spray head of claim 1, wherein the first set of holes and the second set of holes are configured in a hexagonal pattern, a triangular pattern, or a combination of hexagonal and triangular patterns.

3. The spray head of claim 2, wherein the hexagon in the hexagonal pattern is an equilateral hexagon, and the triangle in the triangular pattern is an equilateral triangle.

4. As in request item 1, the sprinkler head, wherein: The first set of holes is arranged in a hexagonal pattern; the second set of holes is located at the vertices of a plurality of triangles within the hexagon formed by the first set of holes; and one of the holes in the first set is located within each of the triangles; or wherein: the second set of holes is arranged in a hexagonal pattern; the first set of holes is located at the vertices of a plurality of triangles within the hexagon formed by the second set of holes; and one of the holes in the second set is located within each of the triangles.

5. The sprinkler head of claim 1, wherein the third component further includes: The gas inlet is in fluid communication with the gas chamber; The fluid inlet is in fluid communication with the first of the pair of arc-shaped grooves; And a fluid outlet, which is in fluid communication with the second of the pair of arc-shaped grooves.

6. As in request item 1, the sprinkler head, wherein: The pair of arc-shaped grooves and the plurality of grooves are separated from the air chamber and the first group of holes and the second group of holes; the pair of arc-shaped grooves surround the first through holes in the second component; or the pair of arc-shaped grooves and the plurality of grooves have the same depth.

7. The spray head of claim 1, wherein the bottom surface of the second member further includes a semi-circular groove along the periphery of the bottom surface of the second member, wherein the semi-circular groove is in fluid communication with the air chamber, and wherein the semi-circular groove surrounds the first through holes in the second member or the semi-circular groove surrounds the pair of arcuate grooves.

8. The spray head of claim 1, wherein the pair of arcuate grooves includes a plurality of vertically extending ridges that contact the bottom surface of the third member, and wherein the height of the plurality of vertically extending ridges is equal to the depth of the plurality of grooves.

9. As in request item 1, the sprinkler head, wherein: The plurality of grooves are parallel to each other; or the plurality of grooves have a serrated shape.

10. The spray head of claim 1, wherein the first end of the plurality of grooves is connected to the first of the pair of arcuate grooves, and wherein the second end of the plurality of grooves is connected to the second of the pair of arcuate grooves.

11. The spray head of claim 1, wherein the first through holes in the second member are located between the plurality of grooves.

12. As in request item 1, the sprinkler head, wherein: The ratio of the total cross-sectional area of ​​the first group of holes to the cross-sectional area of ​​the cylindrical portion of the first component is between 4.5% and 5.5%; the ratio of the total cross-sectional area of ​​the first group of holes to the cross-sectional area of ​​the cylindrical portion of the first component is between 4% and 6%; the ratio of the number of holes in the first group to the number of holes in the second group is between 1.00 and 1.05; or the density of the first group of holes and the second group of holes is between 4 and 5 holes per square inch.

13. A spray head for processing a substrate in a processing chamber, the spray head comprising: The first component includes a disc-shaped portion and a cylindrical portion extending vertically from the disc-shaped portion. The diameter of the disc-shaped portion is larger than the outer diameter of the cylindrical portion, and the inner diameter of the cylindrical portion is larger than the diameter of the substrate. The disc-shaped portion includes a first set of holes and a second set of holes having a first diameter and a second diameter, respectively, and the first set of holes and the second set of holes extend from the center of the disc-shaped portion to the inner diameter of the cylindrical portion. The second component, which is disc-shaped and includes a plurality of first through holes aligned with the first set of holes in the first component, has a top surface, a plurality of side surfaces, and a bottom surface attached to the disc-shaped portion of the first component on one side relative to the cylindrical portion and defining an air chamber that is in fluid communication with and separated from the second set of holes in the first component. The top surface includes a pair of arcuate grooves along the periphery of the top surface and located at opposite ends of the top surface, and a plurality of grooves extending between the pair of arcuate grooves. The third component, which is disc-shaped and includes a plurality of second through holes aligned with the first through holes and the first set of holes in the first component, has a bottom surface attached to the top surface of the second component, wherein the third component includes an annular ridge located on the top surface of the third component and along the periphery of the third component. And a recessed portion that extends from the inner diameter of the annular ridge to the center of the top surface of the third member.

14. As in request item 13, the sprinkler head, wherein: The inner diameter of the annular ridge is greater than or equal to the inner diameter of the cylindrical portion of the first member; or the outer diameter of the annular ridge is greater than or equal to the outer diameter of the cylindrical portion of the first member.

15. As in request item 13, the sprinkler head, wherein: The width of the annular ridge is greater than or equal to the thickness of the cylindrical portion of the first member; or the inner diameter of the annular ridge is greater than the diameter of the substrate.

16. As in request item 13, the sprinkler head, wherein: The diameter of the recess is greater than or equal to the inner diameter of the cylindrical portion of the first member; or the diameter of the recess is greater than the diameter of the substrate.

17. As in request item 13, the sprinkler head, wherein: The second through holes in the third component are located within the inner diameter of the annular ridge; or the second through holes in the third component are located within the recess.

18. A substrate processing system, comprising: Processing chamber; A spray head for processing a substrate in a processing chamber and disposed at the top of the processing chamber, the spray head comprising: a first member including a disc-shaped portion and a cylindrical portion extending vertically from the disc-shaped portion, the diameter of the disc-shaped portion being larger than the outer diameter of the cylindrical portion, the inner diameter of the cylindrical portion being larger than the diameter of the substrate, the disc-shaped portion including a first set of holes and a second set of holes having a first diameter and a second diameter respectively, and the first set of holes and the second set of holes extending from the center of the disc-shaped portion to the inner diameter of the cylindrical portion; The second component, which is disc-shaped, includes a plurality of first through holes aligned with the first set of holes in the first component. The second component has a top surface, a plurality of side surfaces, and a bottom surface attached to the disc-shaped portion of the first component on one side relative to the cylindrical portion, defining an air chamber that is in fluid communication with and separated from the second set of holes in the first component. The top surface includes a pair of arcuate grooves along the periphery of the top surface and located at opposite ends of the top surface, and a plurality of grooves extending between the pair of arcuate grooves. The third component, which is disc-shaped, includes a plurality of second through holes aligned with the first through holes and the first set of holes in the first component, and the third component has a bottom surface attached to the top surface of the second component. The substrate processing system further includes: a plasma generator disposed above the third component of the spray head to supply plasma to the spray head. A base, disposed in the processing chamber, wherein the cylindrical portion of the first component of the spray head surrounds the top portion of the base; a gas delivery system for supplying gas to the gas chamber; and a fluid delivery system for supplying fluid to one of the pair of arcuate grooves.

19. The substrate processing system of claim 18, wherein the first set of holes in the spray head filters ions from the plasma and allows free radicals from the plasma to pass through the spray head into the processing chamber.

20. The substrate processing system of claim 18, wherein: The film deposited on this substrate has a non-uniformity of 0.0%. The film deposited on this substrate has a non-uniformity of less than 0.1%; Or the gap between the bottom surface of the disc-shaped portion of the first component of the spray head and the top surface of the base is between 0.11 inches and 0.2 inches.

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