Modular mainframe layout for supporting multiple semiconductor process modules or chambers

Abstract

This invention provides a method and apparatus for bonding small wafers to a substrate. In some embodiments, a multi-chamber processing tool for processing substrates includes: an equipment front-end module (EFEM) having one or more loading ports for receiving one or more types of substrates; and a plurality of automation modules coupled to each other and having a first automation module coupled to the EFEM, wherein each of the plurality of automation modules includes a transfer chamber and one or more processing chambers coupled to the transfer chamber, wherein the transfer chamber includes a buffer for holding the plurality of one or more types of substrates, and wherein the transfer chamber includes a transfer robot for transferring one or more types of substrates between the buffer, the one or more processing chambers, and buffers disposed in adjacent automation modules of the automation modules.

Description

[Technical Field]

[0001] The embodiments of this disclosure are related to substrate processing equipment. [Previous Technology]

[0002] During the manufacture of semiconductor integrated circuit devices, the substrate undergoes various processes. Some of these processes include wafer dicing, in which a processed wafer is placed on a dicing tape and cut or divided into a plurality of dies or wafers. Once the wafer is diced, the wafers typically remain on the dicing tape until they are retrieved and bonded to the substrate. Conventional processing tools for cleaning, dicing, and bonding the wafers to the substrate typically include multiple tools or a single linear robot housed in a host tool. Numerous chambers or processing modules may be coupled to the host and typically determine the length of the host and the single linear robot. However, tools comprising a single linear robot housed in the host offer limited scalability and processing yield.

[0003] Therefore, the inventors have provided an improved multi-chamber processing tool for processing substrates. [Summary of the Invention]

[0004] This document provides a method and apparatus for processing substrates. In some embodiments, a multi-chamber processing tool for processing substrates includes: an equipment front end module (EFEM) having one or more loading ports for receiving one or more types of substrates; and a plurality of automation modules coupled to each other and having a first automation module coupled to the EFEM, wherein each of the plurality of automation modules includes a transfer chamber and one or more processing chambers coupled to the transfer chamber, wherein the transfer chamber includes a buffer for holding the plurality of one or more types of substrates, and wherein the transfer chamber includes a transfer robot for transferring one or more types of substrates between the buffer, the one or more processing chambers, and buffers disposed in adjacent automation modules of the automation modules.

[0005] In some embodiments, a multi-chamber processing tool for processing substrates includes: an equipment front end module (EFEM) having one or more first loading ports for receiving a first type of substrate, one or more second loading ports for receiving a second type of substrate having a plurality of wafers, and an EFEM robot for transferring the first type of substrate and the second type of substrate; and a plurality of automation modules coupled to each other and having a first automation module coupled to the EFEM, wherein each of the plurality of automation modules includes a transfer chamber and one or more processing chambers, the processing chambers including at least one of the following coupled to the transfer chamber: a wet cleaning chamber, a plasma chamber, a degassing chamber, a radiation chamber, or a bonding chamber, wherein the transfer chamber includes a buffer for holding one or more of the first type of substrate and one or more of the second type of substrate, and wherein the transfer chamber includes a buffer for holding one or more of the first type of substrate and one or more of the second type of substrate, and wherein the transfer chamber includes a buffer for holding one or more of the first type of substrate and one or more of the second type of substrate. The delivery chamber includes a transfer robot for transferring a first substrate and a second substrate between a buffer, one or more processing chambers, and buffers disposed in adjacent automation modules of the automation modules; and wherein one or more processing chambers of the first automation module of the automation modules include at least one of a plasma chamber or a degassing chamber and include a wet cleaning chamber, the second automation module coupled to the first automation module of the automation modules includes at least one of a plasma chamber or a degassing chamber, and the third automation module coupled to the second automation module of the automation modules includes one or more bonding chambers for removing the wafers from the second substrate and bonding the wafers to the first substrate.

[0006] In some embodiments, a method for bonding a plurality of small wafers to a substrate includes the following steps: loading a first substrate onto a first loading port of an equipment front end module (EFEM) having a plurality of automated modules; using an EFEM robot to transfer the first substrate to a first buffer, the first buffer being disposed in a first automated module coupled to the EFEM; continuously transferring the first substrate from the first buffer to a first wet cleaning chamber for performing a cleaning process, to a first degassing chamber for performing a degassing process to dry the first substrate, to a first plasma chamber for performing a plasma etching process to remove unwanted material from the first substrate, and to a bonding chamber; using an EFEM robot to transfer a second substrate having a plurality of small wafers to the first buffer; and transferring the first substrate to a bonding chamber. The second substrate is continuously transferred from the first buffer to the second wet cleaning chamber for a cleaning process, then to the second degassing chamber for a degassing process to dry the second substrate, then to the second plasma chamber for a plasma etching process to remove unwanted material from the second substrate, then to the radiation chamber for a radiation process to weaken the bonding between the wafers and the second substrate, and then to the bonding chamber; at least some of the wafers are transferred from the second substrate to the first substrate in the bonding chamber; and at least some of the wafers are bonded to the first substrate in the bonding chamber.

[0007] This invention provides a method and apparatus for bonding small wafers to a substrate. In some embodiments, a multi-chamber processing tool for processing substrates includes: a first equipment front end module (EFEM) having one or more loading ports for receiving one or more types of substrates; a second EFEM having one or more loading ports for receiving one or more types of substrates on a side of the multi-chamber processing tool opposite to the first EFEM; and a plurality of atmospheric modular mainframes (AMMs) coupled to each other and having a first AMM coupled to the first EFEM and a last AMM coupled to the second EFEM, wherein each of the plurality of AMMs includes a transfer chamber and one or more processing chambers coupled to the transfer chamber, wherein the transfer chamber includes a buffer for holding the plurality of one or more types of substrates, and wherein the transfer chamber includes a transfer robot for transferring one or more types of substrates between the buffer, the one or more processing chambers, and buffers disposed in adjacent AMMs of the AMMs.

[0008] In some embodiments, a multi-chamber processing tool for processing substrates includes: a first equipment front end module (EFEM) having one or more first loading ports for receiving a first type of substrate, one or more second loading ports for receiving a second type of substrate having a plurality of small wafers, and an EFEM robot for transferring the first type of substrate and the second type of substrate; a second EFEM having one or more second loading ports for receiving the first type of substrate, one or more second loading ports for receiving a second type of substrate having a plurality of small wafers, and an EFEM robot for transferring the first type of substrate and the second type of substrate; and a plurality of atmospheric modular mainframes; AMMs (Automatic Material Handling Machines) are coupled to each other and have a first AMM coupled to a first EFEM and a last AMM coupled to a second EFEM, wherein each of the AMMs includes a transfer chamber and one or more processing chambers, the processing chambers including at least one of the following coupled to the transfer chamber: a wet cleaning chamber, a plasma chamber, a degassing chamber, a radiation chamber, or a bonding chamber, wherein the transfer chamber includes a buffer for holding one or more of the first substrates and one or more of the second substrates, and wherein the transfer chamber includes a buffer for holding the buffer, one or more processing chambers, and the substrates disposed in the first substrate. A transfer robot that transfers a first substrate and a second substrate between buffers in adjacent AMMs; wherein one or more processing chambers of the first AMM of the AMMs include at least one of a plasma chamber or a degassing chamber and include a wet cleaning chamber, the second AMM of the AMMs coupled to the first AMMs includes at least one of a plasma chamber or a degassing chamber, and the third AMM of the AMMs coupled to the second AMMs includes one or more bonding chambers for removing the wafers from the second substrate and bonding the wafers to the first substrate.

[0009] In some embodiments, a method for bonding a plurality of small wafers to a substrate includes the following steps: loading a first substrate onto a first loading port of an equipment front end module (EFEM) having a plurality of AMMs; transferring the first substrate to a first buffer using an EFEM robot, the first buffer being disposed in a first AMM coupled to the EFEM; continuously transferring the first substrate from the first buffer to a first wet cleaning chamber for performing a cleaning process, transferring it to a first degassing chamber for performing a degassing process to dry the first substrate, transferring it to a first plasma chamber for performing a plasma etching process to remove unwanted material from the first substrate, and transferring it to a bonding chamber; transferring a second substrate having a plurality of small wafers to the first buffer using an EFEM robot; and continuously transferring the second substrate from the first buffer to a second wet cleaning chamber. The wafers are transferred to a second degassing chamber to perform a degassing process to dry the second substrate, to a second plasma chamber to perform a plasma etching process to remove unwanted material from the second substrate, and to a radiation chamber to perform a radiation process to weaken the bonding between the wafers and the second substrate, and to a bonding chamber; at least some of the wafers are transferred from the second substrate to the first substrate in the bonding chamber; at least some of the wafers are bonded to the first substrate in the bonding chamber; and the first substrate with the bonded wafers is loaded from the final AMM to the loading port of the second EFEM of the multi-chamber processing tool.

[0010] Other and further embodiments of this disclosure are described below.

Implementation Method

[0023] This application provides embodiments of methods and apparatus for processing substrates. The apparatus typically includes a modular multi-chamber processing tool and one or more equipment front-end modules (EFEMs) for loading and unloading substrates into and out of the multi-chamber processing tool. These EFEMs are coupled to a plurality of automated modules (also referred to as a plurality of atmospheric modular mainframes (AMMs)) for performing one or more processing steps on the substrate. The one or more processing steps can be any suitable step in manufacturing or packaging integrated circuits. For example, the one or more processing steps can be used to perform one or more of the following processes: bonding processes to bond a plurality of small wafers to the substrate, plasma dicing or dicing processes, substrate cleaning processes, substrate plating or coating processes, or similar processes. The AMMs are typically connected to the EFEMs to transfer the substrate to one or more chambers associated with each AMM.

[0024] Each of these AMMs includes a transfer robot, which allows the transfer robots to work in parallel to advantageously increase processing yield by facilitating the simultaneous processing of multiple substrates. For example processes that bond a plurality of wafers to a substrate, multi-chamber processing tools advantageously allow the bonding of a plurality of wafers of different sizes to a substrate, and allow the bonding of such wafers to multiple layers on the substrate within the multi-chamber processing tool.

[0025] Figure 1 illustrates a schematic top view of a multi-chamber processing tool 100 for bonding wafers to substrates according to at least some embodiments of the present disclosure. The multi-chamber processing tool 100 typically includes an equipment front-end module (EFEM) 102 and a plurality of AMMs 110 sequentially coupled to the EFEM 102. The AMMs 110 are used to reciprocate one or more substrates 112 from the EFEM 102 via the multi-chamber processing tool 100 and to perform one or more processing steps on these substrates 112. Each of the AMMs 110 typically includes a transfer chamber 116 and one or more processing chambers 106 coupled to the transfer chamber 116 to perform one or more processing steps. The AMMs 110 are coupled to each other via their respective transfer chambers 116 to advantageously provide modular scalability and customization of the multi-chamber processing tool 100. As shown in Figure 1, the AMM 110 includes three AMMs, wherein the first AMM 110a is coupled to the EFEM 102, the second AMM 110b is coupled to the first AMM 110a, and the third AMM 110c is coupled to the second AMM 110b.

[0026] EFEM 102 includes a plurality of loading ports 114 for receiving one or more substrates 112. In some embodiments, the one or more substrates 112 include 200 mm wafers, 300 mm wafers, 450 mm wafers, framed substrates, carrier substrates, silicon substrates, glass substrates, etc. In some embodiments, the loading ports 114 include at least one of one or more first loading ports 114a for receiving a first substrate 112a or one or more second loading ports 114b for receiving a second substrate 112b. In some embodiments, the first substrate 112a and the second substrate 112b have different dimensions. In some embodiments, the second substrate 112b includes a framed substrate or a carrier substrate. In some embodiments, the second substrate 112b includes a plurality of wafers disposed on a framed or carrier substrate. In some embodiments, the second substrate 112b can accommodate wafers of different types and sizes. Therefore, one or more second loading ports 114b may have different sizes or receiving surfaces for loading a second type of substrate 112b with different sizes.

[0027] In some embodiments, the load ports 114 are arranged along a common side of EFEM 102. Although Figure 1 illustrates a pair of first load ports 114a and a pair of second load ports 114b, EFEM 102 may include other combinations of load ports, such as one first load port 114a and three second load ports 114b.

[0028] In some embodiments, the EFEM 102 includes a scanning station 108 with a substrate ID reader for scanning one or more substrates 112 to identify information. In some embodiments, the substrate ID reader includes a barcode reader or an optical character recognition (OCR) reader. The multi-chamber processing tool 100 is used to utilize any identification information from one or more substrates 112, which is scanned to determine process steps based on the identification information, such as different process steps for a first substrate 112a and a second substrate 112b. In some embodiments, the scanning station 108 can also be rotated to align with the first substrate 112a or the second substrate 112b. In some embodiments, one or more of the AMMs 110 include the scanning station 108.

[0029] An EFEM robot 104 is housed within an EFEM 102 and is used to transport a first substrate 112a and a second substrate 112b between the loading ports 114 and the scanning station 108. The EFEM robot 104 may include a substrate end effector for handling the first substrate 112a and a second end effector for handling the second substrate 112b. The EFEM robot 104 is rotatable or linearly rotatable and movable.

[0030] Figure 6 illustrates a second substrate 112b according to at least some embodiments of the present disclosure. In some embodiments, the second substrate 112b is a frame substrate that typically includes a backing strip 602 surrounded by a frame 604. In use, a plurality of wafers 606 may be attached to the backing strip 302. These wafers 606 are typically formed via a dicing process that cuts a semiconductor wafer 610 into these wafers 606 or dies. In some embodiments, the frame 604 is made of metal, such as stainless steel. The frame 604 may have one or more notches 608 to facilitate alignment and handling. For a semiconductor wafer 610 having a diameter of 300 mm, the frame 604 may have a width of about 340 mm to about 420 mm and a length of about 340 mm to about 420 mm. The second substrate 112b may alternatively be a carrier plate for coupling the wafers 606 to the carrier plate.

[0031] Referring back to Figure 1, one or more processing chambers 106 may be hermetically engaged with a transfer chamber 116. The transfer chamber 116 typically operates at atmospheric pressure, but can be used to operate under vacuum pressure. For example, the transfer chamber 116 may be a non-vacuum chamber for operation at approximately 700 Torr or greater atmospheric pressure. Furthermore, although one or more processing chambers 106 are generally depicted orthogonal to the transfer chamber 116, one or more processing chambers 106 may be angularly positioned relative to the transfer chamber 116, or a combination of orthogonality and angular positioning. For example, a second AMM 110b depicts a pair of processing chambers 106 angularly positioned relative to the transfer chamber 116.

[0032] The transfer chamber 116 includes a buffer 120 for accommodating one or more first substrates 112a. In some embodiments, the buffer 120 is used to accommodate one or more of the first substrates 112a and one or more of the second substrates 112b. The transfer chamber 116 includes a transfer robot 126 for transferring the first substrates 112a and the second substrates 112b between the buffer 120, one or more processing chambers 106, and buffers disposed in adjacent AMMs 110. For example, the transfer robot 126 in the first AMM 110a is used to transfer the first substrates 112a and the second substrates 112b between the buffers 120 in the first AMM 110a and the second AMM 110b. In some embodiments, the buffer 120 is disposed within the internal volume of the transfer chamber 116, advantageously reducing the overall footprint of the tool. Additionally, the buffer 120 has access to the internal volume of the transfer chamber 116 to facilitate the entry and exit of the transfer robot 126. In some embodiments, the buffer 120 can also be used to perform a radiation process on a second substrate 112b.

[0033] Figure 7 illustrates an isometric view of the transfer chamber 116 of such AMM 110 according to at least some embodiments of the present disclosure. The transfer chamber 116 is illustrated in simplified form to describe key components. The transfer chamber 116 generally includes a frame 710 covered by a plate (top plate 712 shown in Figure 7, side plates not shown) to enclose the transfer chamber 116. In some embodiments, the width of the transfer chamber 116 is less than its length. The top plate 712 (or side plates) may include an inlet / outlet 716 that can be selectively opened or closed to maintain the inlet / outlet 716 of the transfer chamber 116. The side plates include openings at interfaces with at least one of one or more processing chambers 106, EFEM 102, or adjacent transfer chambers. Although Figure 7 illustrates a transfer chamber 116 having a rectangular or box shape, the transfer chamber 116 may have any other suitable shape, such as cylindrical, hexagonal, or similar shapes. One or more processing chambers 106 may be orthogonally coupled to transfer chamber 116 or may be coupled at an angle relative to transfer chamber 116.

[0034] The transfer chamber 116 may have one or more environmental controls. For example, airflow openings (e.g., inlet / outlet 716) in the transfer chamber 116 may include filters for filtering airflow entering the transfer chamber 116. Other environmental controls may include one or more of humidity control, static control, temperature control, or pressure control.

[0035] The transfer robot 126 is typically housed within the frame 710. The transfer robot 126 is used for rotation or linear movement within the transfer chamber 116. In some embodiments, the transfer robot 126 moves linearly via tracks on the base plate of the transfer chamber 116 or via wheels beneath the transfer robot 126. The transfer robot 126 includes a telescopic arm 720 having one or more end effectors 730 that extend into one or more processing chambers 106 and adjacent AMMs. In some embodiments, the one or more end effectors 730 include a substrate end effector for handling a first substrate 112a and a second end effector for handling a second substrate 112b. In some embodiments, for a transfer chamber 116 having a length of about 2.0 to about 2.5 meters, the telescopic arm 720 may have a travel length of up to about 1.0 meter. In some embodiments, the EFEM robot 104 has the same type and configuration as the transfer robot 126 to enhance component commonality.

[0036] The buffer 120 is housed within the frame 710, for example, within the internal volume of the frame 710. In some embodiments, the buffer 120 is rotatable to align the first substrate 112a with the second substrate 112b in a required manner. In some embodiments, the buffer is used to hold one or more substrates 112 in a vertically stacked manner, thereby advantageously reducing the floor space of the transfer chamber 116. For example, in some embodiments, the buffer 120 includes a plurality of shelves 722 for storing or holding one or more first substrates 112a and one or more second substrates 112b. In some embodiments, the plurality of shelves 722 are arranged in a vertically spaced configuration. In some embodiments, the buffer 120 includes six shelves. In some embodiments, the plurality of shelves includes two shelves for accommodating the second substrate 112b.

[0037] Referring back to Figure 1, one or more processing chambers 106 may include an atmospheric pressure chamber for operation at atmospheric pressure and a vacuum chamber for operation at vacuum pressure. Examples of atmospheric pressure chambers may generally include wet cleaning chambers, radiation chambers, heating chambers, metering chambers, bonding chambers, or the like. Examples of vacuum chambers may include plasma chambers. The above-mentioned types of atmospheric pressure chambers may also be used for operation under vacuum, if required. One or more processing chambers 106 may be any processing chamber or module required to perform bonding processes, cutting processes, cleaning processes, electroplating processes, or the like.

[0038] In some embodiments, one or more processing chambers 106 in the AMM 110 include at least one of the following: a wet cleaning chamber 122, a plasma chamber 130, a degassing chamber 132, a radiation chamber 134, or a connector chamber 140, such that the multi-chamber processing tool 100 includes at least one wet cleaning chamber 122, at least one plasma chamber 130, at least one degassing chamber 132, at least one radiation chamber 134, and at least one connector chamber 140.

[0039] The wet cleaning chamber 122 is used to perform a wet cleaning process to clean one or more substrates 112 via a fluid such as water. The wet cleaning chamber 122 may include a first wet cleaning chamber 112a for cleaning a first substrate 112a or a second wet cleaning chamber 122b for cleaning a second substrate 112b.

[0040] The degassing chamber 132 is used to perform a degassing process to remove moisture from the substrate 112 via, for example, a high-temperature baking process. In some embodiments, the degassing chamber 132 includes a first degassing chamber 132a for a first substrate 112a and a second degassing chamber 132b for a second substrate 112b.

[0041] The plasma chamber 130 can be used to perform an etching process to remove unwanted materials, such as organic materials and oxides, from the first substrate 112a or the second substrate 112b. In some embodiments, the plasma chamber 130 includes a first plasma chamber 130a for the first substrate 112a and a second plasma chamber 130b for the second substrate 112b. The plasma chamber 130 can also be used to perform an etching process to dicing the substrate 112 into small wafers. In some embodiments, the plasma chamber 130 can be used to perform a deposition process, such as physical vapor deposition, chemical vapor deposition, or similar processes, to coat the first substrate 112a or the second substrate 112b with a desired material layer.

[0042] The radiation chamber 134 is used to perform a radiation process on the second substrate 112b to reduce adhesion between the wafers 606 and the backing tape 602. For example, the radiation chamber 134 may be an ultraviolet radiation chamber for directing ultraviolet radiation to the backing tape 602 or a heating chamber for heating the backing tape 602. The reduced adhesion between the wafers 606 and the backing tape 602 facilitates easier removal of the wafers 606 from the second substrate 112b. In some embodiments, the radiation chamber 134 is used to hold and process a plurality of second substrates 112b.

[0043] The bonding chamber 140 is used to transfer and bond at least a portion of the small wafers 606 to one of the first substrates 112a. The bonding chamber 140 typically includes a first support 142 for supporting one of the first substrates 112a and a second support 144 for supporting one of the second substrates 112b.

[0044] In some embodiments, one or more processing chambers 106 in the first AMM 110a include at least one of a plasma chamber 130 or a degassing chamber 132, and include a wet cleaning chamber 122. In the illustrative example of Figure 1, the first AMM 110a includes a first plasma chamber 130a and a second plasma chamber 130b on a first side of the first AMM 110a. In some embodiments, the first AMM 110a includes a first wet cleaning chamber 122a and a second wet cleaning chamber 122b on a second side of the first AMM 110a opposite to the first side. In some embodiments, the second AMM includes at least one of a plasma chamber 130 or a degassing chamber 132 and a radiation chamber 134.

[0045] In some embodiments, the last AMM among these AMMs 110, such as the third AMM 110c of Figure 1, includes one or more bonding chambers 140 (two are shown in Figure 1). In some embodiments, a first bonding chamber of the two bonding chambers is used to remove and bond a small wafer having a first size, and a second bonding chamber of the two bonding chambers is used to remove and bond a small wafer having a second size. In some embodiments, any of these AMMs 110 includes a metrology chamber 118 for measuring one or more substrates 112. In Figure 1, the metrology chamber 118 is shown as a portion of the transfer chamber 116 of the second AMM 110b coupled to the second AMM 110b. However, the metrology chamber 118 may be coupled to any transfer chamber 116 or located within the transfer chamber 116.

[0046] Controller 180 controls the operation of any tool of the multi-chamber processing tool described herein (including multi-chamber processing tool 100). Controller 180 may be controlled directly by the multi-chamber processing tool 100, or alternatively by controlling a computer (or controller) associated with the multi-chamber processing tool 100. In operation, controller 180 enables data collection and feedback from the multi-chamber processing tool 100 to optimize the performance of the multi-chamber processing tool 100. Controller 180 typically includes a central processing unit (CPU) 182, memory 184, and support circuitry 186. CPU 182 may be any type of general-purpose computer processor suitable for industrial environments. Support circuitry 186 is typically coupled to CPU 182 and may include cache memory, clock circuitry, input / output subsystems, power supply, etc. Software routines, such as those described below, may be stored in memory 184 and, when executed by CPU 182, convert CPU 182 into a purpose-specific computer (controller 180). Software routines may also be stored and / or executed by a second controller (not shown) located remotely from the multi-chamber processing tool 100.

[0047] Memory 184 is in the form of a computer-readable storage medium containing instructions that, when executed by CPU 182, facilitate the operation of semiconductor processes and devices. The instructions in memory 184 are in the form of a program product, such as a program that performs the methods of this principle. The program code may be based on any of many different programming languages. In one instance, this disclosure may be implemented as a program product stored on a computer-readable storage medium used with a computer system. The program product defines the functionality of the program (including the methods described herein). Illustrative computer-readable storage media include, but are not limited to: non-writable storage media that permanently stores information (e.g., read-only memory devices within a computer, such as CD-ROM disks readable by a CD-ROM drive, flash memory, ROM chip, or any type of solid-state non-volatile semiconductor memory); and writable storage media that store variable information thereon (e.g., floppy disks or any type of solid-state random access semiconductor memory within a floppy disk drive or hard disk drive). Such computer-readable storage media is in the form of this principle when carrying computer-readable instructions that direct the functionality of the methods described herein.

[0048] Figure 2 illustrates a schematic top view of a multi-chamber processing tool 200 for bonding a small wafer to a substrate according to at least some embodiments of the present disclosure. The multi-chamber processing tool 200 is similar to the multi-chamber processing tool 100, having different configurations of one or more processing chambers 106. The multi-chamber processing tool 200 includes three AMMs. In some embodiments, a first AMM 110a includes a first degassing chamber 132a for degassing a first substrate 112a and a second degassing chamber 132b for degassing a second substrate 112b on a first side of the first AMM 110a, and two wet cleaning chambers 122b on a second side of the first AMM 110a opposite to the first side. In some embodiments, the second side of the first AMM 110a may alternatively include two first wet cleaning chambers 122a or one first wet cleaning chamber 122a and one second wet cleaning chamber 122b.

[0049] In some embodiments, the second AMM 110b includes a first plasma chamber 130a and a second plasma chamber 130b on a first side of the second AMM 110b. In some embodiments, the second side of the second AMM 110b opposite to the first side includes two wet cleaning chambers 122a. In some embodiments, the second side of the second AMM 110b includes the first wet cleaning chamber 122a and a radiation chamber 134. In some embodiments, the last AMM, such as the third AMM 110c of Figure 2, includes one or more processing chambers 106, including two connector chambers 140 and a radiation chamber 134. In some embodiments, the radiation chamber 134 is disposed along the width of the transfer chamber 116. Compared to the multi-chamber processing tool 100, the placement of the radiation chamber 134 in the third AMM 110c advantageously provides a multi-chamber processing tool 200 with two additional wet cleaning chambers 122.

[0050] Figure 3 illustrates a schematic top view of a multi-chamber processing tool 300 for bonding a small wafer to a substrate according to at least some embodiments of the present disclosure. The multi-chamber processing tool 300 is similar to the multi-chamber processing tool 200, except that the multi-chamber processing tool 300 includes a fourth AMM 110d and a fifth AMM 110e. In some embodiments, the AMMs 110 include one or more AMMs having one or more bonding chambers 140 disposed between a first AMM 110a and a last AMM (e.g., the fifth AMM 110e in Figure 3).

[0051] In some embodiments, the multi-chamber processing tool 300 includes six bonding chambers 140, wherein the six bonding chambers 140 are used to process wafers of the same type and size or wafers of different types and sizes. In some embodiments, the fifth AMM 110e includes a radiation chamber 134. Compared to the multi-chamber processing tool 200 of Figure 2, the modular configuration of the multi-chamber processing tool 300 advantageously facilitates parallel bonding or additional substrates and additional wafers of different types and sizes.

[0052] Figure 4 illustrates a schematic top view of a multi-chamber processing tool 400 for bonding a wafer to a substrate, arranged in a T-shaped configuration according to at least some embodiments of the present disclosure. The T-shaped configuration of the multi-chamber processing tool 400 advantageously reduces the tool length compared to a linear layout (such as multi-chamber processing tool 300), while having the same or similar number of processing chambers as multi-chamber processing tool 300.

[0053] In some embodiments, as shown in Figure 4, the AMM 110 includes a bonding module 410 coupled to the AMM on three sides. In some embodiments, the AMM 110 includes a first AMM 110a coupled to the EFEM 102, a second AMM 110b coupled to the first AMM 110a at one end, and a third AMM 110c coupled to the bonding module 410 at the opposite end. In some embodiments, a third AMM 110c and a fourth AMM 110d are coupled to the bonding module 410 on opposite sides. In some embodiments, a fifth AMM 110e is coupled to the fourth AMM 110d at the end opposite to the bonding module 410. In some embodiments, the transfer robot 126 in the bonding module 410 is used to transfer one or more substrates 112 between the buffer 120 in the bonding module 410 and the buffers in the third AMM 110c and the fourth AMM 110d. In some embodiments, the bonding module 410 includes a radiation chamber 134 located on the side of the bonding module 410 opposite to the second AMM 110b.

[0054] Figure 5 illustrates a schematic top view of a multi-chamber processing tool 500 for bonding a wafer to a substrate, arranged in a U-shaped configuration according to at least some embodiments of the present disclosure. The multi-chamber processing tool 500 includes AMMs 110 arranged in a U-shaped configuration. As shown in Figure 5, a first group of three AMMs 110a-110c are linearly arranged, a second group of three AMMs 110d-110f extends vertically from the first group, and a third group of three AMMs 110g-110i extends vertically from the second group and is parallel to the first group. Compared to a linear configuration (such as the multi-chamber processing tool 300 in Figure 3), the U-shaped configuration of the multi-chamber processing tool 500 advantageously reduces the tool length.

[0055] In some embodiments, the second EFEM 502 is coupled to the last AMM among the AMMs 110. For example, in Figure 5, the last AMM or the ninth AMM 110i is coupled to the second EFEM 502. In some embodiments, the second EFEM 502 includes one or more loading ports 514 and an EFEM robot 104. In some embodiments, one or more loading ports 514 include one or more first loading ports 514a for receiving a first substrate 112a and one or more second loading ports 514b for receiving a second substrate 112b having a plurality of wafers. In some embodiments, one or more loading ports 514 include four second loading ports 514b without including the first loading ports 514a. The addition of the second EFEM 502 advantageously adds additional loading ports and additional scanning stations 108 to the tool, thereby increasing processing yield. The addition of the second EFEM 502 also advantageously allows one or more substrates 112 to enter the multi-chamber processing tool 500 from one end and exit from the other end without returning to one end, thereby reducing processing and increasing processing yield. Reducing the processing of one or more substrates 112 can advantageously reduce particle generation and contamination in the multi-chamber processing tool 500. In some embodiments, each of the EFEM 102 and the second EFEM 502 has two or more loading ports. In some embodiments, the EFEM 102 and the second EFEM 502 together include two or more first loading ports 114a and four or more second loading ports 116b. In some embodiments, the EFEM 102 and the second EFEM 502 together include two of the first loading ports 114a and six of the second loading ports 116b. The second EFEM 502 can be added to any multi-chamber processing tool described herein.

[0056] In some embodiments, utilizing a U-shaped configuration, one of the AMMs 110 may include two buffers 120. Figure 5 illustrates a sixth AMM 110f having two buffers 120; however, any of the three AMMs 110d-110f in the second group may include two buffers 120. In some embodiments, the third AMM 110c and the seventh AMM 110g may include a radiation chamber 134. The configuration of one or more processing chambers 106 associated with the AMMs 110 in any of Figures 1 through 5 is exemplary, and one or more processing chambers 106 may be rearranged in any suitable manner to achieve the desired application in any of the multi-chamber processing tools 100, 200, 300, 400, 500, 900, and 1000.

[0057] Figure 8 illustrates a flowchart of a method 800 for bonding a small wafer to a substrate according to at least some embodiments of the present disclosure. At 802, method 800 includes the step of loading a substrate (e.g., a first substrate 112a) onto a loading port (e.g., substrate loading port 114a) of an equipment front end module (EFEM) (e.g., equipment front end module 102) having a plurality of AMMs (e.g., a plurality of AMMs 110) (e.g., multi-chamber processing tools 100, 200, 300, 400, 500, 900, 1000).

[0058] At 804, method 800 includes the step of using an EFEM robot (e.g., EFEM robot 104) to move a first substrate to a first buffer (e.g., buffer 120) disposed in a first AMM (e.g., first AMM 110a), the first AMM being coupled to an EFEM. In some embodiments, the EFEM robot is used to move the first substrate to a scanning station (e.g., scanning station 108) in the EFEM before moving the first substrate to the first buffer to record identification information to determine process steps based on the identification information. For example, the identification information may indicate at least one of the following: how many different types of wafers will be bonded to the first substrate, how many layers of wafers will be bonded to the first substrate, or the desired arrangement when the wafers are bonded to the first substrate. The identification information may also indicate which pre-bonding process steps (e.g., wet cleaning, plasma etching, degassing, UV processing, etc.) and process parameters (e.g., duration, power, temperature, etc.) are required. The identification information may be read via a substrate ID reader (e.g., an OCR reader or a barcode reader).

[0059] At 806, method 800 includes the following steps: continuously transferring a first substrate from a first buffer to a first wet cleaning chamber (e.g., first wet cleaning chamber 122a) via a corresponding transfer robot (e.g., transfer robot 126) in each of the AMMs to perform a cleaning process; transferring it to a first degassing chamber (e.g., first degassing chamber 132a) to perform a degassing process to dry the first substrate; transferring it to a first plasma chamber (e.g., first plasma chamber 130a) to perform a plasma etching process to remove unwanted material from the first substrate; and transferring it to a bonding chamber (e.g., bonding chamber 140).

[0060] At 808, method 800 includes the step of using an EFEM robot to transfer a second substrate (e.g., second substrate 112b) having a plurality of small wafers from a second loading port (e.g., one or more second loading ports 114b) to a first buffer. In some embodiments, the EFEM robot is used to transfer the second substrate to a scanning station in the EFEM before transferring it to the first buffer to record identification information for determining process steps based on the identification information. The identification information may be read via an OCR reader or a barcode reader.

[0061] At 810, method 800 includes the following steps: sequentially transferring a second substrate from a first buffer to a second wet cleaning chamber (e.g., second wet cleaning chamber 122b) via a corresponding transfer robot in each of the AMMs to perform a cleaning process; transferring it to a second degassing chamber (e.g., second degassing chamber 132b) to perform a degassing process to dry the second substrate; transferring it to a second plasma chamber (e.g., second plasma chamber 130b) to perform a plasma etching process to remove unwanted material from the second substrate; transferring it to a radiation chamber (e.g., radiation chamber 134) to perform a radiation process to weaken the adhesive bond between the wafer and the second substrate; and transferring it to a bonding chamber. In some embodiments, the radiation process is a UV radiation process. In some embodiments, the radiation process is a heating process.

[0062] At 812, method 800 includes the step of transferring at least some of the wafers from a second substrate to a first substrate in a bonding chamber. At 814, method 800 includes the step of bonding at least some of the wafers to the first substrate in a bonding chamber via a suitable bonding method. In some embodiments, after bonding at least some of the wafers to the first substrate in the bonding chamber, the first substrate is transferred to a second bonding chamber. In some embodiments, a second portion of the second substrate is transferred to the second bonding chamber. In some embodiments, the second portion of the second substrate includes a plurality of second wafers having dimensions different from those of the wafers. In some embodiments, at least some of the second wafers are transferred and bonded to the first substrate in the second bonding chamber. At 816, method 800 includes the step of loading the first substrate and the wafers bonded from the last AMM into the loading port of a second EFEM (e.g., a second EFEM) of a multi-chamber processing tool.

[0063] In some embodiments, a first substrate may be transferred to a third bonding chamber to bond a plurality of third wafers to the first substrate, the size of which differs from the sizes of the wafers and the second wafers. Therefore, a multi-chamber processing tool is used to accommodate N bonding chambers as needed to bond N wafers of different types or sizes to a given substrate. For example, the multi-chamber processing tool 400 of Figure 4 includes six bonding chambers to accommodate six different types or sizes of wafers. Once bonding is complete, the first substrate is returned to the first loading port via a buffer and a transfer robot of the multi-chamber processing tool. Once bonding is complete, a second substrate may remain in the multi-chamber processing tool for subsequent processing, or a subsequent first substrate, or alternatively, may be returned to the second loading port via a buffer and a transfer robot.

[0064] In some embodiments, the wafers are arranged along a first layer of wafers on a first substrate. In some embodiments, the first substrate having the first layer of wafers is transferred to a first plasma chamber of a multi-chamber processing tool to perform a supplementary plasma etching process to remove unwanted material. In some embodiments, the first substrate is then transferred to a bonding chamber or a second bonding chamber. In the bonding chamber or the second bonding chamber, the wafers from a second substrate or the second wafers from one of the second substrates are transferred along the second layer of wafers onto the first layer. The second layer of wafers may include wafers of the same type and size as the first layer of wafers. Alternatively, the second layer of wafers may include at least one wafer of a different type or size than the first layer of wafers.

[0065] In some embodiments, a first substrate and a second substrate are processed simultaneously in a multi-chamber processing tool. In some embodiments, multiple first substrates and multiple second substrates are processed simultaneously in a multi-chamber processing tool to advantageously increase processing yield. The multi-chamber processing tool may include a second EFEM (e.g., second EFEM 502) or a third EFEM to provide additional load ports and scanning stations, thereby advantageously increasing processing capacity. For example, at least one of the first of the first substrates or the first of the second substrates may undergo a wet cleaning process, while the second of the first substrates is undergoing a degassing process, and the third of the first substrates and the second of the second substrates are undergoing a bonding process. In another example, the first and second of the first substrates may undergo a wet cleaning process, while the third of the first substrates is undergoing a degassing process, and the fourth and fifth of the first substrates are undergoing bonding processes with the first of the second substrates and the second of the second substrates, respectively. These are non-limiting examples of how multiple first and second substrates can be processed in a multi-chamber processing tool.

[0066] In some embodiments, a multi-chamber processing tool can be used to perform plasma dicing or dicing processes using the plasma chambers of the multi-chamber processing tool before bonding the small wafer to a first substrate. In some embodiments, the multi-chamber processing tool can be used to perform additional cleaning or sub-plating processes before or after bonding the small wafer to the first substrate. These AMMs are typically connected to an EFEM to transfer substrates to one or more processing chambers associated with each AMM. Therefore, an appropriate number of AMMs and associated processing chambers can be used to adjust the desired yield of processed substrates.

[0067] Figure 9 illustrates a schematic top view of a multi-chamber processing tool for bonding a wafer to a substrate according to at least some embodiments of the present disclosure. The multi-chamber processing tool 900 is similar to the multi-chamber processing tool 200, except that the multi-chamber processing tool 900 includes a fourth AMM 110d and a second EFEM 502, the second EFEM 502 being coupled to the fourth AMM 110d on a side opposite to the EFEM 102. In some embodiments, a radiation chamber 134 is coupled to the fourth AMM 110d, and the second EFEM 502 is coupled to the radiation chamber 134. This arrangement advantageously allows a first substrate 112a and a second substrate 112b to enter the multi-chamber processing tool 900 from the EFEM 102 and exit from the second EFEM 502, thereby increasing yield. The second EFEM 502 may be incorporated into any tool disclosed herein.

[0068] In some embodiments, one or more of the transfer chambers 116 may include a pre-aligner 910 for rotating and aligning a first substrate 112a or a second substrate 112b to a desired positioning. The pre-aligner 910 may be detachable from the buffer 120. In some embodiments, the transfer chamber 116 associated with the AMM 110 having the connector chamber 140 may include the pre-aligner 910. In some embodiments, the radiation chamber 134 may be used to rotatably arrange one or more substrates 112 therein.

[0069] Figure 10 illustrates a schematic top view of a multi-chamber processing tool 1000 for bonding a small wafer to a substrate according to at least some embodiments of the present disclosure. The multi-chamber processing tool 1000 may be similar to the multi-chamber processing tool 900, except that the multi-chamber processing tool 1000 includes a plurality of EFEMs 102. In some embodiments, any multi-chamber processing tool disclosed herein may include a plurality of EFEMs 102 at one end of the tool and a second EFEM at the other end of the tool, for example, as shown in Figure 10. The plurality of EFEMs in the EFEMs 102 advantageously allows for increased capacity of one or more loading ports, thereby increasing yield. The plurality of EFEMs in the EFEMs 102 advantageously provides additional loading ports to facilitate additional die types. For example, one EFEM 102 may include two loading ports for a first substrate 112a and two loading ports for a second substrate 112b, and another EFEM 102 may include four loading ports for the second substrate 112b. The second type of substrate 112b may include different grain types and sizes.

[0070] In some embodiments, a transfer chamber 116 may be disposed between each EFEM 102 and the first AMM 110a. In some embodiments, the transfer chamber 116 may include one or more shelves 1010 for holding and rotating one or more substrates 112. In some embodiments, the transfer chamber may include one or more of the shelves 1010 disposed on either side of a transfer robot 126 within the transfer chamber 116. The transfer robot 126 may be used to transfer substrates 112 from one or more shelves 1010 to the first AMM 110a.

[0071] Although the foregoing describes embodiments of the present invention, other and further embodiments of the present invention may be designed without departing from the basic scope of the present invention. [Simplified Explanation of the Diagram]

[0011] The embodiments of the invention briefly summarized above and discussed in more detail below can be understood by referring to the illustrative embodiments of the invention illustrated in the accompanying drawings. However, it should be noted that the drawings only show typical embodiments of the present disclosure and should not be considered as limiting its scope, as the present disclosure may allow for other equally effective embodiments.

[0012] Figure 1 illustrates a schematic top view of a multi-chamber processing tool for bonding a small wafer to a substrate according to at least some embodiments of the present disclosure.

[0013] Figure 2 illustrates a schematic top view of a multi-chamber processing tool for bonding a small wafer to a substrate according to at least some embodiments of the present disclosure.

[0014] Figure 3 illustrates a schematic top view of a multi-chamber processing tool for bonding a small wafer to a substrate according to at least some embodiments of the present disclosure.

[0015] Figure 4 illustrates a schematic top view of a multi-chamber processing tool for bonding a wafer to a substrate, arranged in a T-shaped configuration according to at least some embodiments of the present disclosure.

[0016] Figure 5 illustrates a schematic top view of a multi-chamber processing tool for bonding a wafer to a substrate, arranged in a U-shaped configuration according to at least some embodiments of the present disclosure.

[0017] Figure 6 illustrates a second substrate according to at least some embodiments of the present disclosure.

[0018] Figure 7 illustrates an isometric view of a simplified automation module or atmospheric module host according to at least some embodiments of the present disclosure.

[0019] Figure 8 illustrates a flowchart of a method for bonding a small wafer to a substrate according to at least some embodiments of the present disclosure.

[0020] Figure 9 illustrates a schematic top view of a multi-chamber processing tool for bonding a small wafer to a substrate according to at least some embodiments of the present disclosure.

[0021] Figure 10 illustrates a schematic top view of a multi-chamber processing tool for bonding a small wafer to a substrate according to at least some embodiments of the present disclosure.

[0022] For ease of understanding, the same component symbols are used to represent the same components commonly seen in the figures, where possible. The figures are not drawn to scale and may be simplified for clarity. Components and features of one embodiment may be advantageously incorporated into other embodiments without further description. [Biomaterial Storage]

[0073] Domestic storage information (please note in order of storage institution, date, and number): None. International storage information (please note in order of storage country, institution, date, and number): None.

Claims

1. A multi-chamber processing tool for processing substrates, comprising: a device front-end module (EFEM) having one or more loading ports for receiving one or more types of substrates; and a plurality of automation modules coupled to each other and having a first automation module coupled to the EFEM, wherein each of the automation modules includes a transfer chamber and one or more processing chambers coupled to the transfer chamber, wherein the transfer chamber includes a buffer for holding the plurality of the one or more types of substrates, and wherein the transfer chamber includes a buffer for holding the buffer, the one or more processing chambers, and a buffer disposed in an adjacent automation module of one of the automation modules. A transfer robot for transferring one or more substrates between different substrates, wherein the one or more loading ports include one or more first loading ports for receiving a first type substrate and one or more second loading ports for receiving a second type substrate having a plurality of small wafers, and wherein each of the automation modules comprises at least one of a wet cleaning chamber, a plasma chamber, a degassing chamber or a bonding chamber, such that the multi-chamber processing tool comprises at least one wet cleaning chamber, at least one plasma chamber, at least one degassing chamber and at least one bonding chamber.

2. The multi-chamber processing tool as claimed in claim 1, wherein the one or more processing chambers of a first automation module include at least one of a plasma chamber or a degassing chamber and include a wet cleaning chamber, and a final automation module of the automation modules includes one or more bonding chambers for removing the wafers from the second substrate and bonding the wafers to the first substrate.

3. The multi-chamber processing tool as claimed in claim 1, wherein the at least one wet cleaning chamber includes a first wet cleaning chamber for cleaning the first type of substrate and a second wet cleaning chamber for cleaning the second type of substrate, wherein the at least one plasma chamber includes a first plasma chamber for processing the first type of substrate and a second plasma chamber for processing the second type of substrate, and wherein the at least one degassing chamber includes a first degassing chamber for processing the first type of substrate and a second degassing chamber for processing the second type of substrate.

4. The multi-chamber processing tool as claimed in claim 1, wherein at least one of the following conditions exists: the transfer chamber is a non-vacuum chamber, or the EFEM includes a scanning station having a substrate ID reader.

5. The multi-chamber processing tool as claimed in claim 1, wherein the automation modules include one or more automation modules having one or more connector chambers disposed between the first automation module and a final automation module.

6. The multi-chamber processing tool as claimed in any one of claims 1 to 5, wherein a plurality of automated modules include a first automated module coupled to the EFEM, a second automated module coupled to the first automated module at one end and coupled to a coupling module at an opposite end, a third automated module and a fourth automated module coupled to the coupling module on an opposite side of the coupling module, and a fifth automated module coupled to the fourth automated module at an end opposite to the coupling module, wherein the coupling module includes a buffer and a transfer robot.

7. The multi-chamber processing tool as claimed in any one of claims 1 to 5, further comprising a second EFEM coupled to one of the last automated modules, wherein the automated modules are arranged in a linear configuration.

8. The multi-chamber processing tool as claimed in any one of claims 1 to 5, further comprising a second EFEM coupled to one of the last automation modules, wherein the second EFEM includes a plurality of loading ports and an EFEM robot; and wherein the automation modules are arranged in a U-shaped configuration.

9. A multi-chamber processing tool for processing a substrate, comprising: a front-end module (EFEM) having one or more first loading ports for receiving a first type substrate, one or more second loading ports for receiving a second type substrate having one of a plurality of wafers, and an EFEM robot for transferring the first type substrate and the second type substrate; and a plurality of automation modules coupled to each other and having a first automation module coupled to the EFEM, wherein each of the automation modules includes a transfer chamber and one or more processing chambers, the processing chambers including at least one of a wet cleaning chamber, a plasma chamber, a degassing chamber or a bonding chamber, the chambers being coupled to the transfer chamber, wherein the transfer chamber includes a buffer for holding one or more of the first type substrate and one or more of the second type substrate, and wherein the transfer chamber includes a A transfer robot for transferring the first substrate and the second substrate between a buffer, one or more processing chambers, and a buffer disposed in an adjacent automation module of the automation modules; wherein the one or more processing chambers of a first automation module of the automation modules include at least one of a plasma chamber or a degassing chamber and include a wet cleaning chamber, a second automation module coupled to the first automation module of the automation modules includes at least one of a plasma chamber or a degassing chamber, and a third automation module coupled to the second automation module of the automation modules includes one or more bonding chambers for removing the wafers from the second substrate and bonding the wafers to the first substrate.

10. The multi-chamber processing tool as claimed in claim 9, wherein the third automation module includes two bonding chambers, wherein a first bonding chamber of the two bonding chambers is used to remove and bond a small wafer having a first size, and a second bonding chamber of the two bonding chambers is used to remove and bond a small wafer having a second size.

11. The multi-chamber processing tool as claimed in any one of claims 9 to 10, wherein at least one of the following conditions exists: the buffer is used to rotate to align the second substrate, or the transfer robot is used to rotate and move linearly within the transfer chamber.

12. The multi-chamber processing tool as claimed in any one of claims 9 to 10, wherein the EFEM robot and the transfer robot include a first end effector for transporting the first type of substrate and a second end effector for transporting the second type of substrate.

13. The multi-chamber processing tool as claimed in any one of claims 9 to 10, further comprising a second EFEM coupled to a final automation module among the automation modules.

14. A method for bonding a plurality of small wafers to a substrate, comprising the steps of: loading a first substrate onto a first loading port of a device front-end module (EFEM) of a multi-chamber processing tool having a plurality of automated modules; using an EFEM robot to transfer the first substrate to a first buffer, the first buffer being disposed in a first automated module coupled to the EFEM; continuously transferring the first substrate from the first buffer to a first wet cleaning chamber to perform a cleaning process, to a first degassing chamber to perform a degassing process to dry the first substrate, to a first plasma chamber to perform a plasma etching process to remove unwanted material from the first substrate, and to a bonding chamber; using the EFEM robot to transfer a second substrate having a plurality of small wafers to the first buffer; The second substrate is continuously transferred from the first buffer to a second wet cleaning chamber for a cleaning process, transferred to a second degassing chamber for a degassing process to dry the second substrate, transferred to a second plasma chamber for a plasma etching process to remove unwanted material from the second substrate, and transferred to the bonding chamber; at least some of the small wafers are transferred from the second substrate to the first substrate in the bonding chamber; and at least some of the small wafers are bonded to the first substrate in the bonding chamber.

15. The method of claim 14 further comprises the following steps: using the EFEM robot to transfer the first substrate and the second substrate to a scanning station in the EFEM before transferring them to the first buffer, to record identification information to determine the process steps based on the identification information.

16. The method of claim 14, wherein the first substrate and the second substrate are processed in parallel.

17. The method of claim 14, wherein a plurality of first substrates and a plurality of second substrates are processed in parallel in the multi-chamber processing tool.

18. The method of any one of claims 14 to 17, further comprising the steps of: transferring the first substrate to a second bonding chamber; transferring a second substrate of the second substrate to the second bonding chamber, wherein the second substrate of the second substrate comprises a plurality of second wafers having a size different from that of the wafers; and transferring at least some of the second wafers onto the first substrate.

19. The method of any one of claims 14 to 17, wherein the wafers are disposed on the first substrate along a first layer of wafers, and further comprising the steps of: transferring the first substrate having the first layer of wafers to the first plasma chamber to perform a supplementary plasma etching process to remove unwanted material; transferring the first substrate to the bonding chamber or a second bonding chamber; and transferring the wafers from the second substrate and a plurality of second wafers from a second substrate of the second substrate onto the first layer of wafers in the bonding chamber or the second bonding chamber.

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