Sputtering apparatus and sputtering method using the same

Abstract

This invention provides a sputtering apparatus and a sputtering method for improving the deposition uniformity of a substrate. The sputtering apparatus includes: a chamber; a target disposed in the chamber; a power supply unit for sputtering the target; a substrate support unit disposed facing the target and supporting the substrate; an electromagnet array, wherein inner and outer electromagnets are arranged around the circumference of the sidewall of the chamber; a current supply unit for supplying current to the electromagnet array; and a control unit for controlling the magnetic field formed by the electromagnet array by adjusting the current supplied to each electromagnet in the electromagnet array.

Description

[Technical Field]

[0001] The present invention relates to a sputtering apparatus and a sputtering method, and more specifically, to a sputtering apparatus and a sputtering method capable of improving the deposition uniformity of a substrate. [Previous Technology]

[0002] Sputtering, known as physical vapor deposition (PVD), is the most well-known method for depositing metal layers and related materials in the process of manufacturing semiconductor integrated circuits.

[0003] Integrated circuits developed in recent years include surface patterns such as narrow and deep vias (i.e., vias with high aspect ratios), but sputtering is a ballistic process that is fundamentally unsuitable for coating the sidewalls and bottom surfaces of vias with high aspect ratios. Therefore, sputtering processes have been developed to achieve uniform sputtering coating in the aforementioned vias, and this process relies on the ionization of sputtering particles and the electrostatic attraction of ions penetrating into the vias.

[0004] In essence, sputtering deposition tends to deposit substrate edges that are thinner than the center of the substrate because the sputtering area (or region) of the target affecting the substrate edges is much smaller than that at the center of the substrate. This tendency adversely affects the deposition uniformity of the entire substrate, and is even more problematic in cases where the substrate surface has holes with high aspect ratios formed.

[0005] Therefore, compared with related technologies, there is a requirement for a technique that improves the deposition uniformity on a substrate by inducing ions to the substrate edge, thereby increasing the deposition amount at the substrate edge. [Prior Art Documents] [Patent Documents] Korean Patent No. 10-0786713 [Summary of the Invention]

[0006] The present invention provides a sputtering apparatus and a sputtering method for improving the deposition uniformity on a substrate by controlling the magnetic field formed by an electromagnet array.

[0007] According to an exemplary embodiment, a sputtering apparatus includes: a chamber extending in one direction; a target disposed in the chamber; a power supply unit configured to sputter the target; a substrate support unit disposed facing the target and configured to support a substrate; an electromagnet array wherein an inner electromagnet and an outer electromagnet pair are arranged, and the electromagnet array is disposed at the circumference of a sidewall of the chamber; a current supply unit configured to supply current to the electromagnet array; and a control unit configured to control the magnetic field formed by the electromagnet array by adjusting the current supplied to each electromagnet of the electromagnet array.

[0008] The electromagnet array may include two or more pairs of electromagnets arranged in the one direction.

[0009] The electromagnet array may include: a central array including at least one pair of electromagnets; and an end array and another end array, respectively disposed on one side and the other side of the central array in one direction, and symmetrical with respect to the central array, wherein the same number of pairs of electromagnets are arranged in the one direction.

[0010] A current different from the current supplied to at least one of the end arrays and the other end array can be supplied to the central array.

[0011] The control unit can adjust the current supplied to at least one of the internal electromagnet and the external electromagnet, such that a smaller current than the current supplied to the external electromagnet is supplied in a direction opposite to the direction of the current supplied to the external electromagnet.

[0012] The sputtering apparatus may further include a current measuring component electrically connected to a circuit configured to supply current from the current supply unit to the electromagnet array to measure the current supplied to each of the electromagnets, and the control unit may control the magnetic field formed by the electromagnet array by adjusting the current supplied to each of the electromagnets according to the current value measured in the current measuring component.

[0013] The sputtering apparatus may further include a magnetic field measuring component disposed around the electromagnet array to measure the magnetic field formed by the electromagnet array, and the control unit may control the magnetic field formed by the electromagnet array by adjusting the current supplied to each of the electromagnets according to the magnetic field measured in the magnetic field measuring component.

[0014] The control unit can control the direction of the magnetic field formed by the electromagnet array according to the pattern of the substrate.

[0015] The current supply unit can distribute and supply current from a power source to each of the internal electromagnet and the external electromagnet.

[0016] According to another exemplary embodiment, a sputtering method includes: performing sputtering by applying power to a target disposed in a chamber; supplying current to an electromagnet array in which inner electromagnets and outer electromagnet pairs are arranged, and the electromagnet array is disposed at the circumference of a side wall of the chamber; measuring the current supplied to each electromagnet of the electromagnet array; and controlling the magnetic field formed by the electromagnet array by adjusting the current supplied to each of the electromagnets according to the measured current value.

[0017] The sputtering method may further include: measuring the magnetic field formed by the electromagnet array; and secondary controlling the magnetic field formed by the electromagnet array by secondary adjustment of the current supplied to each of the electromagnets according to the measured magnetic field.

[0018] The electromagnet array may include two or more pairs of electromagnets arranged in the longitudinal direction of the chamber, and the control of the magnetic field may be implemented by controlling the current supplied to the other pairs of electromagnets based on the lowest pair of electromagnets.

[0019] The electromagnet array may include: a central array including at least one pair of electromagnets; and an end array and another end array, respectively disposed on one side and the other side of the central array in the longitudinal direction of the cavity, and symmetrical with respect to the central array, wherein the same number of pairs of electromagnets are arranged in the longitudinal direction of the cavity, and the supply of the current and the control of at least one of the magnetic field can be implemented by supplying a current to the central array that is different from the current supplied to at least one of the end arrays and the other end array.

[0020] The control of the magnetic field can be implemented by controlling the current supplied to the internal electromagnet based on the external electromagnet.

[0021] The direction of the magnetic field formed by the electromagnet array can be controlled according to the pattern of the substrate on which sputtering is performed.

[0022] The sputtering method may further include setting the value of the current supplied to each of the electromagnets for each direction of the magnetic field according to the pattern of the substrate.

Implementation Method

[0024] Specific embodiments will be described in more detail below with reference to the accompanying drawings. However, the invention may be embodied in different forms and should not be construed as limited to the embodiments described herein. Rather, these embodiments are provided so that the invention will be thorough and complete, and its scope will be fully conveyed to those skilled in the art. In each possible case, the same reference numerals are used to refer to the same or similar elements in the description and drawings. In the drawings, the dimensions of layers and areas are exaggerated for clarity of illustration. The same reference numerals in the drawings denote the same elements, and therefore their descriptions are omitted.

[0025] FIG1 is a schematic cross-sectional view showing a sputtering apparatus according to an exemplary embodiment.

[0026] Referring to FIG1, the sputtering apparatus 100 according to an exemplary embodiment may include: a chamber 110 extending in one direction; a target 120 disposed in the chamber 110; a power supply unit 130 for sputtering the target 120; a substrate support unit 140 facing the target 120 and supporting the substrate 10; an electromagnet array 150 including an inner electromagnet and an outer electromagnet pair 155, and arranged circumferentially along the sidewall of the chamber 110; a current supply unit 160 for supplying current to the electromagnet array 150; and a control unit 170 for adjusting the current supplied to each of the electromagnets 155a and 155b to control the magnetic field formed by the electromagnet array 150.

[0027] The chamber 110 may extend in one direction (e.g., vertical) and have an internal space in which a sputtering process is performed. For example, the chamber 110 may be a sealed container including a gate valve (not shown) and includes sidewalls (sidewall bodies) symmetrical about a central axis. Here, the chamber 110 may be made of a metallic material such as stainless steel or steel use stainless (SUS) and electrically grounded, provided that the chamber 110 provides a process space in which the sputtering process is performed. However, the exemplary embodiments are not limited thereto. In addition, a vacuum (approximately 10⁻⁸ Torr) may be created in the internal space of the chamber 110 by venting the interior of the chamber 110 using the venting member 192.

[0028] The target 120 may be a sputtering target disposed in the chamber 110 and from which sputtered and ionized sputtered particles 11a are emitted. For example, the target 120 may be made of a metallic material (e.g., copper, tantalum, and titanium) deposited on the substrate 10, having a circular plate shape, and mounted in the chamber 110 by a metal target holder 121 and / or an insulator 122. Here, the circular plate target 120 may have a thickness of about 6 mm and a diameter of about 300 mm.

[0029] Here, a magnet assembly 180 may be mounted on the rear surface of the target 120 for magnetron sputtering. Here, the magnet assembly 180 may include a central magnet 181, peripheral magnets 182 surrounding the central magnet 181, and a circular yoke 183 connecting the central magnet 181 and the peripheral magnets 182. Each of the magnets 181 and 182 may be a permanent magnet or an electromagnet.

[0030] The power supply unit 130 can apply power to the target 120 for sputtering. For example, the power supply unit 130 can apply a negative voltage to the cylindrical shield 135, causing the target to be electrically biased. Here, when the sputtering discharge gas (e.g., argon (Ar)) supplied to the chamber 110 through the gas supply component 191 is discharged into plasma, and positively charged argon ions 15 (Ar+) are attracted to the negatively biased target 120, tantalum (Ta) can be sputtered from the target 120. At least a portion of the sputtered tantalum particles can fall onto the substrate 10 to deposit a material layer containing tantalum (Ta) (e.g., a tantalum metal layer, a tantalum nitride layer, or a tantalum oxide layer). Here, in the case of reactive sputtering, when a reactive gas, such as nitrogen, is additionally supplied to the chamber 110 to react with the sputtered tantalum (Ta), a tantalum nitride (TaN) layer can be deposited on the substrate 10.

[0031] The substrate support unit 140 can face the target 120 to support the substrate 10. For example, the substrate support unit 140 can be in close contact with the chamber 110 through the insulating member 141 to maintain the sealing of the chamber 110 and to keep the substrate 10 parallel to the target 120. Here, an electrostatic chuck (not shown) for electrostatically suctioning the substrate 10 can be mounted on the substrate support unit 140, and the electrostatic chuck (not shown) can suction the substrate 10 by mounting a suction electrode in the substrate support unit 140 and applying a direct current to the suction electrode. In addition, a heating member (not shown) for heating the substrate 10 during deposition (or film formation) to perform effective deposition can be mounted in the substrate support unit 140.

[0032] Additionally, the substrate support unit 140 may be arranged around a central axis and supported (or held) by a clamping ring or electrostatic chuck (not shown) to sputter and deposit (or coat) the substrate 10. Here, since the radio frequency (RF) power supply 145 is conductive, the RF power supply can be connected to the substrate support unit 140, which serves as an electrode, and the RF-biased substrate support unit 140 can present a negative direct current (DC) bias voltage during plasma formation. This can be used to induce and accelerate positive ions in the plasma. In addition, the electrically grounded shield 135 can protect the side surfaces of the substrate support unit 140 and the walls of the chamber 110 from sputtering deposition.

[0033] Figure 2 is a conceptual diagram for illustrating the formation of a magnetic field by an electromagnet array according to an exemplary embodiment.

[0034] Referring to Figures 1 and 2, the electromagnet array may include an inner electromagnet and an outer electromagnet pair 155 disposed along the sidewall of the chamber 110. Here, the electromagnet array 150 may include at least one electromagnet pair 155 arranged in one direction (or the extension direction of the chamber or the longitudinal direction). The electromagnet array 150 may include an inner electromagnet 155a and an outer electromagnet 155b. Here, the inner electromagnet 155a and the outer electromagnet 155b may be disposed at different radii from the central axis. That is, the inner electromagnet 155a may be disposed at a relatively small radius (or a radius close to the central axis), and the outer electromagnet 155b may be disposed at a relatively large radius (or a radius far from the central axis).

[0035] For example, each of the electromagnets 155a and 155b may be a solenoid coil wound around the sidewall of the chamber 110, or a solenoid made by winding a coil around a cylindrical iron core, as long as the solenoid coil or solenoid generates a magnetic field when current flows. When each of the electromagnets 155a and 155b is a solenoid made by winding a coil around an iron core, the solenoid may be arranged symmetrically along the sidewall of the chamber using the central axis as the center.

[0036] The current supply unit 160 can supply current to the electromagnet array 150 and an electric field can be formed by the electromagnet array 150. As shown in FIG2, when current flows through the electromagnet array 150, an electric field can be formed, and the electric field formed as described above can generally be used to confine the sputtered particles 11a within the central region (or center) of the substrate 10. In this case, since the sputtered particles 11a are not smoothly delivered to the edge of the substrate 10, the edge of the substrate 10 may be deposited thinner than the center of the substrate 10. In addition, since the sputtered particles 11a tend to follow a path in the outward direction (or toward the sidewall of the chamber) at the edge of the substrate 10, the film 11 formed by the sputtered particles 11a can be deposited obliquely. Specifically, when a pattern of vias with a high aspect ratio (or narrow and deep) is formed on the substrate 10, further serious limitations arise because the sidewalls in the outward direction of the vias are deposited thickly, and the sidewalls and bottom surface of the vias are not uniformly (or evenly) coated.

[0037] The control unit 170 can control the magnetic field formed by the electromagnet array 150 by adjusting the current supplied to each of the electromagnets 155a and 155b in the electromagnet array 150. For example, the control unit 170 can control the magnetic field formed by the electromagnet array 150 so that a magnetic field perpendicular to the surface of the substrate 10 is formed not only in the central region of the substrate 10, but also at the edges of the substrate 10.

[0038] FIG3 is a conceptual diagram illustrating the pattern of a substrate according to an exemplary embodiment.

[0039] Referring to FIG3, the substrate 10 may have a pattern, and the pattern may include through-holes with an aspect ratio. It is required that the film 11 be deposited on the substrate 10 having the above-described pattern so that the sidewalls and bottom surface of the holes are well coated. As the aspect ratio of the holes increases, it becomes difficult to coat the sidewalls and bottom surface of the holes evenly.

[0040] The electromagnet array 150 may include two or more pairs of electromagnets 155 arranged in the said one direction. Since the electromagnet array 150 includes two or more pairs of electromagnets 155 arranged in the said one direction, a magnetic field perpendicular to the surface of the substrate 10 can be formed more widely (or more elongatedly), and the sidewalls and bottom surface of the high aspect ratio holes can be uniformly coated. The directionality of the ions (e.g., sputtered particles 11a) is largely influenced by the position of the neutral point or magnetic null point, which is the point where the magnetic flux in the distribution of the magnetic field provided by the electromagnet array 150 and / or the magnet assembly 180 is '0'. When the magnetic null point or neutral point is extremely low along the sidewall of the chamber 110, the magnetic field slopes outward from the edge of the substrate 10, and when the magnetic null point or neutral point is relatively high along the sidewall of the chamber 110, the magnetic field slopes inward from the edge of the substrate 10. Thus, a magnetic field perpendicular to the surface of the substrate 10 can be formed more widely using the magnetic null point or neutral point.

[0041] Here, the lowermost electromagnet pair 155 may be disposed corresponding to the substrate 10, such that sputtered particles 11a can be deposited (or coated) in the holes along the direction of the magnetic field. For example, when the magnetic field is inclined outward from the edge of the substrate 10, the sputtered particles 11a may be inclined inward and deposited in the holes; when the magnetic field is inclined inward from the edge of the substrate 10, the sputtered particles 11a may be inclined outward and deposited in the holes. In addition, when a magnetic field is formed perpendicular to the surface of the substrate 10, the sputtered particles 11a can be effectively deposited on the bottom surface of the holes.

[0042] Here, the control unit 170 can control the current supplied to the other electromagnet pairs 155 based on the lowest electromagnet pair 155. The current can be continuously supplied to the lowest electromagnet pair 155 during sputtering, causing sputtered particles 11a to deposit in the pores along the direction of the magnetic field. Therefore, the control unit 170 can control the current supplied to the other electromagnet pairs 155 based on the lowest electromagnet pair 155.

[0043] When the current supplied to other electromagnet pairs 155 that are set higher than the lowest electromagnet pair 155 is controlled, the position of the neutral point or magnetic zero point can be changed, and the sputtering particles 11a can be controlled according to the directionality of the magnetic field.

[0044] FIG4 is a conceptual diagram for illustrating the control of the magnetic field formed by the array of electromagnets according to an exemplary embodiment. FIG4(a) is a view of the magnetic field when current is not supplied to the central array, and FIG4(b) is a view of the magnetic field when current is supplied to the external electromagnets of the central array.

[0045] Referring to FIG4, the electromagnet array 150 may include: a central array 150c, including at least one pair of electromagnets 155; and an end array 150a and another end array 150b, wherein the same number of pairs of electromagnets 155 are arranged in the one direction, and the end array 150a and the other end array 150b are respectively disposed on one side and the other side of the central array 150c in the one direction and are symmetrical with respect to the central array 150c. The central array 150c may include at least one pair of electromagnets 155, and the two sides (or the two ends) of the electromagnet array 150 may be symmetrical with respect to the central array 150c.

[0046] One end array 150a and another end array 150b may be respectively disposed on one side and the other side of the central array 150c in the one direction, and include the same number of electromagnet pairs 155 arranged in the one direction. Accordingly, one end array 150a and the other end array 150b may be symmetrical with respect to the central array 150c. One end array 150a may be disposed on one side (e.g., the upper portion) of the central array 150c in the one direction, including at least one electromagnet pair 155, and having the same number of electromagnet pairs 155 as the other end array 150b.

[0047] Another end array 150b may be disposed on the other side (e.g., the lower portion) of the central array 150c in the said one direction, including at least one pair of electromagnets 155, and having the same number of pairs of electromagnets 155 as one end array 150a. Here, the other end array 150b may include the lowermost pair of electromagnets 155, and one end array 150a and the central array 150c may be controlled based on the other end array 150b.

[0048] For example, the electromagnet array 150 may include at least three pairs of electromagnets 155, which are arranged in the longitudinal direction of the chamber 110 and are symmetrical in the vertical direction with respect to at least one pair of electromagnets 155. Here, the at least one pair of electromagnets 155 may be a central array 150c.

[0049] The central array 150c can receive a current different from the current supplied to at least one of the end arrays 150a and 150b. The current can be continuously supplied to the other end array 150b, including the lowermost pair of electromagnets 155, during sputtering. A current similar to (or nearly the same as) that of the other end array 150b can be supplied to one end array 150a, which is symmetrical to the other end array 150b, thereby further widening the magnetic field perpendicular to the surface of the substrate 10.

[0050] Furthermore, a current different from the current supplied to each of the end arrays 150a and 150b can be supplied to the central array 150c. Thus, the direction of the magnetic field can be controlled based on the current supplied to the central array 150c, and the directionality of the sputtered particles 11a can be controlled. For example, a current less than the current supplied to each of the end arrays 150a and 150b can be supplied to the central array 150c. That is, a current less than the current supplied to each of the electromagnets 155a and 155b in the central array 150c can be supplied to each of the at least one electromagnet 155a or 155b in the end array 150a and at least one electromagnet 155a or 155b in the other end array 150b. Preferably, a smaller current can be supplied to each of the electromagnets 155a and 155b in the central array 150c than the current supplied to all the electromagnets 155a and 155b in one end array 150a and all the electromagnets 155a and 155b in the other end array 150b. Here, "smaller current" means a current with a smaller amplitude (or absolute value), regardless of the direction of the current.

[0051] As shown in FIG4(a), when no current is supplied to the central array 150c, the magnetic field can be slightly tilted outward from the edge of the substrate 10, and the sputtered particles 11a can be slightly tilted inward and incident on the surface of the substrate 10. Furthermore, as shown in FIG4(b), when a (small) current is supplied only to the external electromagnet 155b of the central array 150c, compared to the case where no current is supplied to the central array 150c, the magnetic field bends slightly inward and is formed perpendicular to the surface of the substrate 10, and the sputtered particles 11a are incident perpendicularly on the surface of the substrate 10. Additionally, when current is supplied only to the internal electromagnet 155a of the central array 150c, compared to the case where no current is supplied to the central array 150c, the magnetic field bends outward from the edge of the substrate 10. Therefore, the direction of the magnetic field and the directionality of the sputtered particles 11a can be controlled by adjusting the current supplied to the external electromagnet 155b and the internal electromagnet 155a of the central array 150c. Here, a small current, less than the current supplied to each of the end arrays 150a and 150b, can be supplied to the central array 150c. On the other hand, when a current greater than the current supplied to at least one of the end arrays 150a and 150b is supplied to the central array 150c, a magnetic field perpendicular to the surface of the substrate 10 may not be widely formed.

[0052] The control unit 170 can control the current supplied to the internal electromagnet 155a based on the external electromagnet 155b. A magnetic zero point or neutral point is generated in the chamber 110 to form a magnetic field perpendicular to the surface of the substrate 10. For this purpose, a current larger than the current supplied to the internal electromagnet 155a is supplied to the external electromagnet 155b in the opposite direction to the internal electromagnet 155a. Since the current is continuously supplied to the external electromagnet 155b to form a magnetic field perpendicular to the surface of the substrate 10, the current supplied to the internal electromagnet 155a can be controlled based on the external electromagnet 155b.

[0053] That is, the control unit 170 can regulate the current supplied to at least one of the internal electromagnet 155a and the external electromagnet 155b to supply a smaller current than the current supplied to the external electromagnet 155b in the opposite direction to the current supplied to the external electromagnet 155b. For example, when a smaller current than the current supplied to the external electromagnet 155b is supplied to the internal electromagnet 155a, a neutral point or magnetic zero point can be generated in the chamber 110. Therefore, a magnetic field perpendicular to the surface of the substrate 10 can be formed, and sputtered particles 11a can be effectively deposited even in holes with a high aspect ratio.

[0054] The sputtering apparatus 100 according to an exemplary embodiment may further include a current measuring component 175, which is electrically connected to a circuit for supplying current from the current supply unit 160 to the electromagnet array 150, and measures the current supplied to each of the electromagnets 155a and 155b.

[0055] The current measuring component 175 is electrically connected to a circuit for supplying current from the current supply unit 160 to the electromagnet array 150, and measures the current supplied to each of the electromagnets 155a and 155b. The current value measured in the current measuring component 175 can be transmitted to the control unit 170. The magnetic field formed by the electromagnet array 150 based on the current supplied to each of the electromagnets 155a and 155b can be predicted. Thus, it is possible to check whether a desired magnetic field (e.g., a magnetic field perpendicular to the surface of the substrate) has been formed, and when the desired magnetic field is not formed, the current supplied to each of the electromagnets 155a and 155b can be adjusted (or controlled) to form the desired magnetic field.

[0056] Furthermore, the control unit 170 can control the magnetic field formed by the electromagnet array 150 by adjusting the current supplied to each of the electromagnets 155a and 155b according to the current value measured in the current measuring component 175. The control unit 170 can receive the current value measured in the current measuring component 175 via the transceiver component 172. Here, the control unit 170 can predict the magnetic field formed by the electromagnet array 150 based on the measured current value, and calculate the error (or difference) based on the current value to be supplied to each of the electromagnets 155a and 155b to form a desired magnetic field. Thus, the power control component 171 can adjust the current supplied to each of the electromagnets 155a and 155b according to the calculated correction value (or error value), and can control the magnetic field formed by the electromagnet array 150 to form a desired magnetic field.

[0057] Here, the power control unit 171 can regulate the current supplied from the current supply unit 160 by directly controlling the current supply unit 160, or by converting the current through the current transducer electrically connected to the current measurement unit 175.

[0058] In addition, the sputtering apparatus 100 according to the exemplary embodiment may further include a magnetic field measuring component 176, which is disposed around the electromagnet array 150 to measure the magnetic field formed by the electromagnet array 150.

[0059] The magnetic field measuring component 176 can be disposed around the electromagnet array 150 and directly measure and inspect the magnetic field formed by the electromagnet array 150. Therefore, the measured magnetic field can be transformed into the desired magnetic field while adjusting the current supplied to each of the electromagnets 155a and 155b. Here, the magnetic field measuring component 176 can transmit the measured value of the magnetic field to the control unit 170.

[0060] Furthermore, the control unit 170 can control the magnetic field formed by the electromagnet array 150 by adjusting the current supplied to each of the electromagnets 155a and 155b according to the magnetic field value measured in the magnetic field measuring component 176. The control unit 170 can receive the magnetic field value measured in the magnetic field measuring component 176 via the transceiver component 172. Here, the control unit 170 can directly compare the measured magnetic field with the desired magnetic field, and adjust the current supplied to each of the electromagnets 155a and 155b while monitoring the measured magnetic field, so that the measured magnetic field can become the desired magnetic field. Through the above magnetic field control, the desired magnetic field can be formed by the electromagnet array 150.

[0061] Although the current supplied to each of the electromagnets 155a and 155b is set to form a desired magnetic field before the start of the sputtering process, the magnetic field formed can actually vary depending on various process conditions. Therefore, the current supplied to each of the electromagnets 155a and 155b can be checked by measuring the current supplied to each of the electromagnets 155a and 155b using the current measuring component 175 to ensure that the current is supplied to each of the electromagnets 155a and 155b according to the setting. In addition, when the current is not supplied to each of the electromagnets 155a and 155b according to the setting, the power control component 171 of the control unit 170 can ensure that the current is supplied to each of the electromagnets 155a and 155b according to the setting. That is, the magnetic field formed by the electromagnet array 150 can be secondary controlled by measuring the magnetic field using the magnetic field measuring component 176 to form a desired magnetic field through the electromagnet array 150. Here, the magnetic field formed by the electromagnet array 150 can be initially controlled by measuring the current supplied to each of the electromagnets 155a and 155b using the current measuring component 175 and adjusting the current supplied to each of the electromagnets 155a and 155b. Furthermore, the magnetic field formed by the electromagnet array 150 can be further finely controlled by measuring the magnetic field using the magnetic field measuring component 176 and finely controlling the current supplied to each of the electromagnets 155a and 155b.

[0062] That is, when the current supplied to each of the electromagnets 155a and 155b and / or the magnetic field formed by the electromagnet array 150 are measured and fed back to the magnetic field control via the control unit 170, deposition uniformity among the multiple substrates 10 can be maintained and consistent process quality can be ensured.

[0063] Furthermore, the control unit 170 can control the direction of the magnetic field formed by the electromagnet array 150 according to the pattern of the substrate 10. For example, if the substrate 10 includes a pattern with a high aspect ratio, a magnetic field perpendicular to the surface of the substrate 10 can be formed more widely. In addition, since the sidewalls and bottom surface of the high aspect ratio holes are unevenly coated with a magnetic field in only one direction, the interior of the holes can be deposited while changing the direction of the magnetic field for each time interval obtained by dividing the process time. For example, the direction of the magnetic field can be adjusted so that when a film is asymmetrically deposited (or coated) in the holes formed at the edge of the substrate 10, the sputtering particles 11a are incident toward the thinly deposited film.

[0064] That is, the deposition of sputtering particles 11a can be performed to suit the pattern of each substrate 10 by controlling the direction of the magnetic field according to the pattern of the substrate 10, and the deposition can be uniformly performed on the sidewalls and bottom surface of the holes with high aspect ratio by changing the direction of the magnetic field for each division time obtained by dividing the process time.

[0065] The current supply unit 160 can allocate current and supply the allocated current from one power source 161, 162, and 163 to each of the internal electromagnet 155a and the external electromagnet 155b. That is, current can be allocated in a common power source 161, 162, and 163, and the allocated current can be supplied to each of the internal electromagnet 155a and the external electromagnet 155b. Here, power sources 161, 162, and 163 may include a power supply.

[0066] For example, the current supply unit 160 may include a first power supply 161, a second power supply 162, and a third power supply 163. Here, the first power supply 161 may distribute and supply current to each of the internal electromagnets 155a and external electromagnets 155b of another end array 150b, and the second power supply 162 may distribute and supply current to each of the internal electromagnets 155a and external electromagnets 155b of the central array 150c. Additionally, the third power supply 163 may distribute and supply current to each of the internal electromagnets 155a and external electromagnets 155b of one end array 150a. Here, each of the first power supply 161, the second power supply 162, and the third power supply 163 may be supplied with current through dual channels, and the current supplied from each channel may be controlled by the control unit 170. Therefore, the current supplied to each of the internal electromagnets 155a and external electromagnets 155b of the electromagnet array 150 can be controlled individually.

[0067] In this case, the configuration of individually controlling the current supplied to each of the internal electromagnets 155a and external electromagnets 155b can be simplified, saving costs and ensuring space. For example, since the current is simply distributed and supplied from the common power supplies 161, 162, and 163 to the internal electromagnets 155a and external electromagnets 155b of each electromagnet array 150, it is easy to supply current to the internal electromagnets 155a and external electromagnets 155b in opposite directions. In addition, impedance matching between the power of a single channel supplying current to the internal electromagnet 155a and the power of a single channel supplying current to the external electromagnet 155b does not need to be implemented by, for example, a matching device, and space can be saved for matching devices.

[0068] FIG5 is a flowchart representing a sputtering method according to another exemplary embodiment.

[0069] A sputtering method according to another exemplary embodiment will be described in detail with reference to FIG5. Overlapping features previously described with respect to sputtering apparatus according to exemplary embodiments will be omitted.

[0070] A sputtering method according to another exemplary embodiment may include: process S100, sputtering by applying power to a target 120 disposed in a chamber 110; process S200, supplying current to an electromagnet array 150 disposed at the circumference of a side wall of the chamber and wherein an inner electromagnet and an outer electromagnet pair 155 are arranged; process S300, measuring the current of each of the electromagnets 155a and 155b supplied to the electromagnet array 150; and process S400, controlling the magnetic field formed by the electromagnet array 150 by adjusting the current supplied to each of the electromagnets 155a and 155b according to the measured current value.

[0071] First, in process S100, sputtering is performed by applying power to a target 120 disposed in a chamber. Sputtering can be performed by applying power to the target 120 disposed in the chamber via a power supply unit 130, and a metal-containing material layer can be deposited on the substrate 10 using the target 120 made of a metal material. For example, tantalum (Ta) can be sputtered from the target 120 to deposit a tantalum metal layer, a tantalum nitride layer, or a tantalum oxide layer on the substrate 10.

[0072] Subsequently, in process S200, current is supplied to the electromagnet array 150, which is disposed on the circumference of the side wall of the chamber 110 and in which an inner electromagnet and an outer electromagnet pair 155 are arranged. The current supply unit 160 can supply current to the electromagnet array 150 and an electric field can be formed through the electromagnet array 150. Here, the electromagnet array 150 can be configured to have an inner electromagnet and an outer electromagnet pair 155 arranged on the circumference of the side wall of the chamber 110, and the inner electromagnet 155a and the outer electromagnet 155b can be disposed on radii different from the central axis of the chamber 110. When current flows through the electromagnet array 150, an electric field can be formed, and the electric field formed as described above can generally be used to confine the sputtered particles 11a within the central region of the substrate 10. Here, the current supply process S200 can be performed during the sputtering process S100, or the sputtering process S100 and the current supply process S200 can be performed simultaneously.

[0073] Subsequently, in process S300, the current of each of the electromagnets 155a and 155b supplied to the electromagnet array 150 is measured. The current supplied to each of the electromagnets 155a and 155b can be measured by a current measuring component 175 electrically connected to a circuit for supplying current from the current supply unit 160 to the electromagnet array 150. The current value measured in the current measuring component 175 can be transmitted to the control unit 170. The magnetic field formed by the electromagnet array 150 based on the current supplied to each of the electromagnets 155a and 155b can be predicted. Thus, it can be checked whether a desired magnetic field (e.g., a magnetic field perpendicular to the surface of the substrate) has been formed, and when the desired magnetic field has not been formed, the current supplied to each of the electromagnets 155a and 155b can be adjusted (or controlled) to form the desired magnetic field.

[0074] Furthermore, in process S400, the magnetic field formed by the electromagnet array 150 is controlled by adjusting the current supplied to each of the electromagnets 155a and 155b according to the measured current value. The control unit 170 can control the magnetic field formed by the electromagnet array 150 by adjusting the current supplied to each of the electromagnets 155a and 155b according to the current value measured in the current measuring component 175. The control unit 170 can receive the current value measured in the current measuring component 175 through the transceiver component 172. Here, the control unit 170 can predict the magnetic field formed by the electromagnet array 150 based on the measured current value, and calculate the error (or difference) based on the current value to be supplied to each of the electromagnets 155a and 155b to form the desired magnetic field. Thus, the power control unit 171 can adjust the current supplied to each of the electromagnets 155a and 155b according to the calculated correction value (or error value), and can control the magnetic field formed by the electromagnet array 150 to form a desired magnetic field.

[0075] The sputtering method according to another exemplary embodiment may further include: process 500, measuring the magnetic field formed by the electromagnet array 150; and process S600, secondary controlling the magnetic field formed by the electromagnet array by secondary adjustment of the current supplied to each electromagnet based on the measured value of the magnetic field.

[0076] Subsequently, in process S500, the magnetic field formed by the electromagnet array 150 can be measured. The magnetic field formed by the electromagnet array 150 can be directly measured and checked by a magnetic field measuring component 176 disposed around the electromagnet array 150. Therefore, the measured magnetic field can be transformed into a desired magnetic field by adjusting the current supplied to each of the electromagnets 155a and 155b. Here, the magnetic field measuring component 176 can transmit the measured value of the magnetic field to the control unit 170.

[0077] Furthermore, in process S600, the magnetic field formed by the electromagnet array can be secondary controlled by adjusting the current supplied to each electromagnet based on the measured magnetic field value. The control unit 170 can control the magnetic field formed by the electromagnet array 150 by adjusting the current supplied to each of the electromagnets 155a and 155b based on the magnetic field value measured in the magnetic field measuring component 176. The control unit 170 can receive the magnetic field value measured in the magnetic field measuring component 176 via the transceiver component 172. Here, the control unit 170 can directly compare the measured magnetic field with the desired magnetic field, and adjust the current supplied to each of the electromagnets 155a and 155b while monitoring the measured magnetic field, so that the measured magnetic field can become the desired magnetic field. Through the above magnetic field control, the desired magnetic field can be formed by the electromagnet array 150. That is, the magnetic field formed by the electromagnet array 150 can be secondary controlled by measuring the magnetic field using the magnetic field measuring component 176, thereby forming the desired magnetic field by the electromagnet array 150. In other words, the magnetic field formed by the electromagnet array 150 can be initially controlled by measuring the current supplied to each of the electromagnets 155a and 155b using the current measuring component 175 and adjusting the current supplied to each of the electromagnets 155a and 155b. Furthermore, the magnetic field formed by the electromagnet array 150 can be further finely controlled by measuring the magnetic field using the magnetic field measuring component 176 and finely controlling the current supplied to each of the electromagnets 155a and 155b.

[0078] That is, when the current supplied to each of the electromagnets 155a and 155b and / or the magnetic field formed by the electromagnet array 150 are measured and fed back to the magnetic field control via the control unit 170, deposition uniformity among the multiple substrates 10 can be maintained and consistent process quality can be ensured.

[0079] Here, the electromagnet array 150 may include two or more pairs of electromagnets 155 arranged in the longitudinal direction of the chamber 110, and the process S400 for controlling the magnetic field may be implemented by controlling the current supplied to the other pairs of electromagnets 155 based on the lowest pair of electromagnets 155. The electromagnet array 150 may include two or more pairs of electromagnets 155 arranged in the longitudinal (or vertical) direction of the chamber 110. Since the electromagnet array 150 includes two or more pairs of electromagnets 155 arranged in said one direction, a magnetic field perpendicular to the surface of the substrate 10 can be further formed in a wider (or longer) manner, and the sidewalls and bottom surface of the holes with a high aspect ratio can be uniformly coated. The directionality of ions (e.g., sputtered particles 11a) is largely affected by the position of the neutral point or magnetic zero point, which is the point in the distribution of the magnetic field provided by the electromagnet array 150 and / or the magnet assembly 180 where the magnetic flux is '0'. When the magnetic zero point or neutral point is extremely low along the sidewall of the cavity 110, the magnetic field slopes outward from the edge of the substrate 10, and when the magnetic zero point or neutral point is relatively high along the sidewall of the cavity 110, the magnetic field slopes inward from the edge of the substrate 10. Thus, a magnetic field perpendicular to the surface of the substrate 10 can be formed more widely using the magnetic zero point or neutral point.

[0080] The process S400 of controlling the magnetic field can be implemented by controlling the current supplied to other electromagnet pairs 155 based on the lowest electromagnet pair 155. Here, the lowest electromagnet pair 155 can be disposed corresponding to the substrate 10, such that sputtering particles 11a can be deposited (or coated) in the holes along the direction of the magnetic field. For example, when the magnetic field is inclined outward from the edge of the substrate 10, the sputtering particles 11a can be inclined inward and deposited in the holes; when the magnetic field is inclined inward from the edge of the substrate 10, the sputtering particles 11a can be inclined outward and deposited in the holes. In addition, when a magnetic field is formed perpendicular to the surface of the substrate 10, the sputtering particles 11a can be effectively deposited on the bottom surface of the holes.

[0081] Here, the control unit 170 can control the current supplied to the other electromagnet pairs 155 based on the lowest electromagnet pair 155. The current can be continuously supplied to the lowest electromagnet pair 155 during sputtering, causing sputtered particles 11a to deposit in the pores along the direction of the magnetic field. Therefore, the control unit 170 can control the current supplied to the other electromagnet pairs 155 based on the lowest electromagnet pair 155.

[0082] When the current supplied to other electromagnet pairs 155 that are set higher than the lowest electromagnet pair 155 is controlled, the position of the neutral point or magnetic zero point can be changed, and the sputtering particles 11a can be controlled according to the directionality of the magnetic field.

[0083] Additionally, the electromagnet array 150 may include: a central array 150c, including at least one pair of electromagnets 155; and an end array 150a and another end array 150b, wherein the same number of pairs of electromagnets 110 are arranged in the longitudinal direction of the chamber 110, and the end array 150a and the other end array 150b are respectively disposed on one side and the other side of the central array in the longitudinal direction of the chamber 110 and are symmetrical with respect to the central array 150c. The central array 150c may include at least one pair of electromagnets 155, and the two sides (or two ends) of the electromagnet array 150 may be symmetrical with respect to the central array 150c.

[0084] An end array 150a and another end array 150b may be respectively disposed on one side and the other side of the central array 150c in the longitudinal direction of the chamber 110 (i.e., in said one direction) and include the same number of electromagnet pairs 155. Here, the same number of electromagnet pairs 155 are respectively arranged on one side and the other side of the central array 150c in the longitudinal direction of the chamber 110. Accordingly, one end array 150a and the other end array 150b may be symmetrical with respect to the central array 150c. One end array 150a may be disposed on one side (e.g., the upper portion) of the central array 150c in the longitudinal direction of the chamber 110, including at least one electromagnet pair 155, and having the same number of electromagnet pairs 155 as the other end array 150b.

[0085] Another end array 150b may be disposed on the other side (e.g., the lower portion) of the central array 150c in the longitudinal direction of the chamber 110, including at least one pair of electromagnets 155 and having the same number of pairs of electromagnets 155 as one end array 150a. Here, the other end array 150b may include the lowermost pair of electromagnets 155, and one end array 150a and the central array 150c may be controlled based on the other end array 150b.

[0086] At least one of the processes S200 for supplying current and S400 for controlling the magnetic field can be implemented by supplying a current to the central array 150c that is different from the current supplied to at least one of the end arrays 150a or 150b, namely one end array 150a and the other end array 150b. A current different from the current supplied to each of the end arrays 150a and 150b can be supplied to the central array 150c. Thus, the direction of the magnetic field and the directionality of the sputtered particles 11a can be controlled according to the current supplied to the central array 150c. For example, a small current, less than the current supplied to each of the end arrays 150a and 150b, can be supplied to the central array 150c. In other words, a smaller current can be supplied to each of the electromagnets 155a and 155b in the central array 150c than the current supplied to each of at least one electromagnet 155a or 155b in one end array 150a and at least one electromagnet 155a or 155b in the other end array 150b. Preferably, a smaller current can be supplied than the current supplied to all the electromagnets 155a and 155b in one end array 150a and all the electromagnets 155a and 155b in the other end array 150b.

[0087] When current is not supplied to the central array 150c, the magnetic field can be slightly tilted outward from the edge of the substrate 10, and the sputtered particles 11a can be slightly tilted inward and incident on the surface of the substrate 10. Furthermore, when current is supplied only to the external electromagnet 155b of the central array 150c, compared to the case where current is not supplied to the central array 150c, the magnetic field bends slightly inward and is formed perpendicular to the surface of the substrate 10, and the sputtered particles 11a are incident perpendicularly on the surface of the substrate 10. Additionally, when current is supplied only to the internal electromagnet 155a of the central array 150c, compared to the case where current is not supplied to the central array 150c, the magnetic field bends outward from the edge of the substrate 10. Therefore, the direction of the magnetic field and the directionality of the sputtered particles 11a can be controlled by adjusting the current supplied to the external electromagnet 155b and the internal electromagnet 155a of the central array 150c. Here, a small current, less than the current supplied to each of the end arrays 150a and 150b, can be supplied to the central array 150c. On the other hand, when a current greater than the current supplied to at least one of the end arrays 150a and 150b is supplied to the central array 150c, a magnetic field perpendicular to the surface of the substrate 10 may not be widely formed.

[0088] The process S400 for controlling the magnetic field can be implemented by controlling the current supplied to the internal electromagnet 155b based on the external electromagnet 155b. The control unit 170 can control the current supplied to the internal electromagnet 155a based on the external electromagnet 155b. A magnetic zero point or neutral point is generated in the chamber 110 to form a magnetic field perpendicular to the surface of the substrate 10. For this purpose, a current larger than the current supplied to the internal electromagnet 155a is supplied to the external electromagnet 155b in the direction opposite to that of the internal electromagnet 155a. Since the current is continuously supplied to the external electromagnet 155b to form a magnetic field perpendicular to the surface of the substrate 10, the current supplied to the internal electromagnet 155a can be controlled based on the external electromagnet 155b. That is, the current supplied to the internal electromagnet 155a can be adjusted to supply a smaller current than the current supplied to the external electromagnet 155b in the direction opposite to that of the current supplied to the external electromagnet 155b. When a small current, less than that supplied to the internal electromagnet 155a, is provided to the external electromagnet 155b, a neutral point or magnetic null point can be generated in the chamber 110. Therefore, a magnetic field perpendicular to the surface of the substrate 10 can be formed, and sputtered particles 11a can be effectively deposited even in holes with a high aspect ratio.

[0089] The magnetic field control process S400 can control the direction of the magnetic field formed by the electromagnet array 150 according to the pattern of the substrate 10 on which the sputtering process is performed. For example, if the substrate 10 includes a pattern with a high aspect ratio, a magnetic field perpendicular to the surface of the substrate 10 can be formed more widely. In addition, since the sidewalls and bottom surface of the high aspect ratio holes are coated with a magnetic field in only one direction, the interior of the holes can be deposited while changing the direction of the magnetic field for each time interval obtained by dividing the process time. For example, the direction of the magnetic field can be adjusted so that when a film is asymmetrically deposited (or coated) in the holes formed at the edge of the substrate 10, the sputtering particles 11a are incident toward the thinly deposited film. In other words, the deposition of sputtering particles 11a can be performed to suit the pattern of each substrate 10 by controlling the direction of the magnetic field according to the pattern of the substrate 10, and the deposition can be uniformly performed on the sidewalls and bottom surface of the holes with high aspect ratio by changing the direction of the magnetic field for each division time obtained by dividing the process time.

[0090] The sputtering method according to an exemplary embodiment may further include a process of setting the value of the current supplied to each of the electromagnets 155a and 155b for each direction of the magnetic field according to the pattern of the substrate 10.

[0091] During the manufacturing process, the value of the current supplied to each of the electromagnets 155a and 155b can be set for each direction of the magnetic field according to the pattern of the substrate 10. The current supplied to each of the electromagnets 155a and 155b can be set to form a desired magnetic field before the start of the sputtering process, so as to supply a current suitable for forming the desired magnetic field to each of the electromagnets 155a and 155b. Although the current supplied to each of the electromagnets 155a and 155b is set, the magnetic field formed in practice can vary depending on various conditions during the process. Therefore, the current supplied to each of the electromagnets 155a and 155b can be measured by the current measuring component 175 to check whether the current is supplied to each of the electromagnets 155a and 155b well according to the setting. Furthermore, when current is not supplied to each of the electromagnets 155a and 155b according to the settings, the power control unit 171 of the control unit 170 can ensure that the current is properly supplied to each of the electromagnets 155a and 155b according to the settings. That is, the magnetic field formed by the electromagnet array 150 can be secondary controlled by measuring the magnetic field using the magnetic field measuring unit 176, so as to form the desired magnetic field through the electromagnet array 150.

[0092] Furthermore, the process S400 for measuring the current and the process S400 for controlling the magnetic field can be performed simultaneously with the sputtering process on the substrate 10 on which the deposition is substantially performed. Additionally, the process S400 for measuring the current and the process S400 for controlling the magnetic field can be performed simultaneously with the sputtering process on the virtual substrate, for setting the current supplied to each of the electromagnets 155a and 155b before performing the sputtering process on the substrate 10 on which the deposition is substantially performed.

[0093] As described above, according to an exemplary embodiment, since a magnetic field is formed by providing an array of electromagnets (inner and outer electromagnets arranged around the circumference of the sidewalls of the chamber), the incident angle of sputtering particles on the substrate can be controlled, and the sputtering particles can be induced to the edge of the substrate to improve the deposition uniformity across the entire substrate. Furthermore, the magnetic field formed by the electromagnet array can be controlled by adjusting the current supplied to each electromagnet using a control unit, forming a uniform magnetic field in the chamber, and allowing sputtering particles to be deposited evenly on the sidewalls and bottom surface of the holes formed on the surface of the substrate, thus forming holes with a high aspect ratio in the substrate. Additionally, since the current supplied to each electromagnet and / or the magnetic field formed by the electromagnet array are measured and fed back to the magnetic field controller via the control unit, deposition uniformity among the plurality of substrates can be maintained, and consistent process quality can be ensured. In addition, the deposition of sputtering particles can be performed to suit the pattern of each substrate by controlling the direction of the magnetic field according to the pattern of the substrate, and the deposition can be uniformly performed on the sidewalls and bottom surface of holes with high aspect ratio by changing the direction of the magnetic field for each division time obtained by dividing the process time.

[0094] The sputtering apparatus according to an exemplary embodiment can control the incident angle of sputtering particles (or ions) on the substrate by providing an electromagnet array, wherein the electromagnet array includes pairs of internal and external electromagnets arranged on the circumference of the sidewall of the chamber to form a magnetic field. This allows sputtering particles to be induced to the edge of the substrate and improves the deposition uniformity over the entire substrate.

[0095] In addition, the magnetic field formed by the array of electromagnets can be controlled by adjusting the current supplied to each electromagnet using a control unit, so that a uniform magnetic field can be formed in the chamber, and sputtered particles can be uniformly deposited on the sidewalls and bottom surfaces of the holes, even on the surface of a substrate in which holes with a high aspect ratio are formed.

[0096] Furthermore, since the current supplied to each electromagnet and / or the magnetic field formed by the electromagnet array are measured and fed back to the magnetic field control via the control unit, deposition uniformity among the multiple substrates can be maintained, and consistent process quality can be ensured. Additionally, sputtering particle deposition can be performed to suit the pattern of each substrate by controlling the direction of the magnetic field according to the substrate pattern, and deposition can be performed uniformly on the sidewalls and bottom surface of holes with high aspect ratios by changing the direction of the magnetic field for each time interval obtained by dividing the process time.

[0097] Although exemplary embodiments of the present invention have been described, it should be understood that the present invention should not be limited to these exemplary embodiments, but rather that various changes and modifications can be made by those skilled in the art within the spirit and scope of the invention as claimed above. Therefore, the true scope of protection of the present invention will be determined by the scope of the claims. [Simplified Explanation of the Diagram]

[0023] Exemplary embodiments can be understood in more detail from the following description taken in conjunction with the accompanying drawings, in which: FIG1 is a schematic cross-sectional view illustrating a sputtering apparatus according to an exemplary embodiment. FIG2 is a conceptual diagram illustrating magnetic field formation by an electromagnet array according to an exemplary embodiment. FIG3 is a conceptual diagram illustrating a pattern of a substrate according to an exemplary embodiment. FIG4 is a conceptual diagram illustrating control of the magnetic field formed by the electromagnet array according to an exemplary embodiment. FIG5 is a flowchart representing a sputtering method according to another exemplary embodiment.

Claims

1. A sputtering apparatus, Includes: a chamber that extends in one direction; A target is disposed in the chamber; A power supply unit is configured to sputter the target; A substrate support unit is configured to face the target and support the substrate; an electromagnet array is provided with pairs of internal and external electromagnets, and the electromagnet array is located at the circumference of the sidewall of the chamber; a current supply unit is configured to supply current to the electromagnet array; and a control unit is configured to control the magnetic field formed by the electromagnet array by adjusting the current supplied to each electromagnet in the electromagnet array. A current measuring component electrically connected to a circuit configured to supply current from the current supply unit to the electromagnet array for measuring the current supplied to each of the electromagnets; and a magnetic field measuring component disposed around the electromagnet array for measuring the magnetic field formed by the electromagnet array, wherein the control unit initially controls the magnetic field formed by the electromagnet array by adjusting the current supplied to each of the electromagnets based on the current value measured in the current measuring component, and wherein the control unit further finely controls the magnetic field formed by the electromagnet array by finely adjusting the current supplied to each of the electromagnets based on the magnetic field measured in the magnetic field measuring component, wherein the electromagnet array includes: a central array including at least one pair of electromagnets; And an end array and another end array, respectively disposed on one side and the other side of the central array in one direction, and symmetrical with respect to the central array, wherein the same number of electromagnet pairs are arranged in the one direction, and wherein the control unit controls the direction of the magnetic field formed by the electromagnet array according to the current supplied to the central array, wherein the current supplied to the central array is different from the current supplied to at least one of the end arrays.

2. The sputtering apparatus as claimed in claim 1, wherein the electromagnet array comprises two or more pairs of electromagnets arranged in the one direction.

3. The sputtering apparatus of claim 1, wherein the control unit adjusts the current supplied to at least one of the internal and external electromagnets such that a smaller current than the current supplied to the external electromagnet is supplied in a direction opposite to the direction of the current supplied to the external electromagnet.

4. The sputtering apparatus of claim 1, wherein the control unit controls the direction of the magnetic field formed by the electromagnet array according to the pattern of the substrate.

5. The sputtering apparatus as claimed in claim 1, wherein the current supply unit distributes and supplies current from a power source to each of the internal electromagnet and the external electromagnet.

6. A sputtering method, comprising: Sputtering is performed by applying power to a target positioned in a chamber; Current is supplied to an electromagnet array, in which pairs of internal and external electromagnets are arranged, and the electromagnet array is located at the circumference of the side wall of the chamber; the current supplied to each electromagnet in the electromagnet array is measured; the magnetic field formed by the electromagnet array is initially controlled by adjusting the current supplied to each electromagnet according to the measured current value; the magnetic field formed by the electromagnet array is measured. And secondary fine control of the magnetic field formed by the electromagnet array by finely adjusting the current supplied to each of the electromagnets according to the measured magnetic field, wherein the electromagnet array includes: a central array including at least one pair of electromagnets; And an end array and another end array are respectively disposed on one side and the other side of the central array in the longitudinal direction of the chamber and are symmetrical with respect to the central array, wherein the same number of electromagnet pairs are arranged in the longitudinal direction of the chamber, wherein supplying the current and initially controlling at least one of the magnetic field are implemented by supplying the central array with a current different from the current supplied to at least one of the end arrays and the other end array, wherein the direction of the magnetic field formed by the electromagnet array is controlled according to the current supplied to the central array.

7. The sputtering method as claimed in claim 6, wherein the electromagnet array comprises two or more pairs of electromagnets arranged in the longitudinal direction of the chamber, and the initial control of the magnetic field is performed by controlling the current supplied to the other pairs of electromagnets based on the lowest pair of electromagnets.

8. The sputtering method as claimed in claim 6, wherein the initial control of the magnetic field is performed by controlling the current supplied to the internal electromagnet based on the external electromagnet.

9. The sputtering method as claimed in claim 6, wherein the direction of the magnetic field formed by the electromagnet array is initially controlled according to the pattern of the substrate on which sputtering is performed.

10. The sputtering method as claimed in claim 9 further includes setting the value of the current supplied to each of the electromagnets for each direction of the magnetic field according to the pattern of the substrate.

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